WO2014032365A1 - Igbt水冷式散热器 - Google Patents

Igbt水冷式散热器 Download PDF

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Publication number
WO2014032365A1
WO2014032365A1 PCT/CN2012/085105 CN2012085105W WO2014032365A1 WO 2014032365 A1 WO2014032365 A1 WO 2014032365A1 CN 2012085105 W CN2012085105 W CN 2012085105W WO 2014032365 A1 WO2014032365 A1 WO 2014032365A1
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WIPO (PCT)
Prior art keywords
substrate
water
flow channel
flow
groove substrate
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Application number
PCT/CN2012/085105
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English (en)
French (fr)
Inventor
李昂
王硕
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中国北车集团大连机车研究所有限公司
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Publication of WO2014032365A1 publication Critical patent/WO2014032365A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to the field of heat exchange technology, and in particular to an IGBT water-cooled heat sink.
  • the most common type of flow channel for this water-cooled condenser is a single flow channel.
  • the single-channel is not very long or the flow path is wide, and the long flow path increases the resistance of the curve, although Increasing the heat dissipation area increases the heat dissipation, but at the same time brings the disadvantage of large resistance; although the flow path width greatly helps to reduce the resistance, the wide flow path inevitably reduces the heat dissipation area, which is difficult to meet the high-power IGBT heat dissipation. Claim.
  • a water-cooled radiator with safe and reliable, high heat dissipation efficiency and stable manufacturing process is provided for the IGBT electronic components on the electric locomotive.
  • the invention mainly utilizes a plurality of thin shunts and stops on the main channel of the trough substrate, thereby increasing the heat dissipating area, increasing the disturbance of the fluid, and improving the heat dissipating effect.
  • the technical means adopted by the present invention are as follows:
  • An IGBT water-cooled radiator includes an inlet and outlet joint, a flat substrate and a groove substrate, and the inlet and outlet joints are provided with two guide columns for quick insertion and extraction of water pipes and two inlet and outlet ports, and the lower end of the inlet and outlet joints
  • the flat substrate is fixed, and the groove substrate is fixed to the lower end of the flat substrate, wherein: the flat substrate is respectively provided with a water inlet and a water outlet that communicate with both ends of the main channel on the groove substrate, At least two flow passage baffles capable of dividing the main flow passage into a plurality of flow passages are disposed in the main flow passage, and the number of the flow distribution passages is one more than the number of the flow passage baffles.
  • the groove substrate is provided with a bolt hole for fixing the IGBT electronic component, and the main flow channel is arranged on the groove substrate where the bolt hole is not provided.
  • the bend of the main flow channel is provided with a stop which causes a turbulent flow through the liquid.
  • the fixing method of the flat substrate and the groove substrate is welding.
  • the invention forms a plurality of shunt passages by adding a plurality of thin flow passage baffles in the liquid flow path of the radiator, that is, the main flow path of the trough substrate, and at the same time, providing a stopper at the bend of the main flow channel, which not only increases
  • the heat dissipation area increases the disturbance of the fluid, and the cooling medium flows through the small shunt to enhance the heat transfer, thereby effectively improving the heat dissipation efficiency of the heat sink, thereby achieving the demanding cooling requirements of the high power IGBT.
  • Figure 1 is a schematic view of the structure of the present invention.
  • FIG. 2 is a schematic view showing the structure of a groove substrate of the present invention.
  • Figure 3 is a side view of the trough substrate of the present invention.
  • an IGBT water-cooled heat sink includes an inlet and outlet joint 1, a flat substrate 2 and a trough substrate 3, and the inlet and outlet joint 1 is provided with two guiding columns 11 for quick insertion and extraction of water pipes.
  • Two inlet and outlet ports 12, two inlet and outlet ports 12 respectively communicate with the water inlet 21 and the water outlet 22 which are disposed on the flat substrate 2 and communicate with both ends of the main channel on the groove substrate 3 (as shown in FIG. 3). ).
  • a main flow path with a plurality of flow path baffles 31 through which the cooling liquid flows is milled on the groove substrate 3 (shown in FIG.
  • the integrated structure that is, formed by milling; the flow channel baffle 31 divides the main flow channel into a plurality of branch channels 32, and the number of the flow channels 32 is one more than the number of the flow channel baffles 31; The number of the flow channel baffles 31 may be appropriately increased or decreased according to the heat dissipation requirement.
  • the distribution pattern of the main flow channels on the groove substrate 3 may be a "several" shape, a "W" shape, and a "back" shape.
  • a rectangular shape or other form suitable for processing on the groove substrate 3 may be used, and a distribution structure similar to a "several" shape known to those skilled in the art is easiest to implement, and the heat dissipation effect is also good.
  • a stopper 33 that can cause a turbulent flow through the liquid is provided at the bend of the main flow channel, and the stopper 33 is also integrated with the groove substrate 3, that is, formed by milling;
  • the slot substrate 3 is provided with a plurality of positions at the position where there is no main channel Bolt holes for IGBT electronic components.
  • the flat substrate 2 is fixed to the lower end of the inlet and outlet joint 1 , the lower end of the flat substrate 2 is brazed and fixed to the groove substrate 3 , and the flat substrate 2 is also provided with a bolt hole on the groove substrate 3 .
  • the flat substrate 2 mainly sealing the flow path on the groove substrate 3, so that the cooling fluid has a closed flow space.
  • the arrangement of the flow channel baffles 31 of the present invention is not limited to parallel arrangement, but also may be arranged in a cross arrangement or other arranging manner. Parallel arrangement is only one of the better design methods of the present invention. Moreover, the processing is convenient and easy to implement.
  • A heat transfer area, m2
  • a tm the average heat transfer temperature difference, which is the logarithmic mean temperature difference multiplied by the plate combination correction factor, V.
  • a plurality of flow path baffles 31 are added to the groove substrate 3 to divide the main flow path into a plurality of flow paths 32, which is equivalent to increasing the heat transfer area of the fluid, that is, increasing the heat transfer heat. According to the heat dissipation heat requirement, the heat dissipation effect can be achieved by appropriately adding and distributing the flow path baffle 32.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

本发明公开了一种IGBT水冷式散热器，包括进出水接头（1）、平基板（2）和槽基板（3），进出水接头（1）上设有两个可供快速插拔水管的导向柱（11）和两个进出水口（12），进出水接头（1）下端固定有平基板（2），平基板（2）下端固定有槽基板（3），其特征在于：平基板（2）上分别设有与槽基板（3）上主流道两端相连通的进水口和出水口，主流道内设有至少两块可将主流道分割成多条分流道的流道挡板，分流道的个数比流道挡板的个数多1个。本发明通过改变液体流道在槽基板上的流通形式，即在槽基板的主流道上加工出很多细的流道挡板从而形成多条分流道，增大了散热面积，增加了流体的扰动，使冷却介质流过细小的流通水道，强化传热，有效地提高了散热器散热效率，从而达到了大功率IGBT的较高的冷却要求。

Description

IGBT水冷式散热器
技术领域
本发明涉及换热技术领域， 具体地说是涉及一种 IGBT水冷式散热器。
背景技术
最近几年来， 我国铁路牵引用电力机车发展迅速， 电力机车所用到的电器元件种类越来 越多， 变压器和主变流器的电器元件在工作中会产生热损耗， 散发出大量的热量， 为了保证 变压器、 主变流器正常工作， 必须采用合适的散热器， 以满足机车上不同电机、 电器在不同 工况下的运行需要。 水冷式冷凝器又称水冷却式散热器， 全部采用全水冷的结构型式， 在这 种冷凝器中， 制冷剂冷却凝结放出的热量被冷却水带走， 相比空气式风冷结构提高了传热效 率提高了散热量。但这种水冷式冷凝器最常见的流道型式是单一流道， 在相同尺寸的水板内， 单一流道不是很长就是流道很宽， 流道很长增加了弯道阻力， 虽然可以增大散热面积提高散 热量， 但同时带来了阻力大的弊端； 流道宽虽然对减小阻力起到了很大的帮助， 但是宽的流 道必然减小散热面积， 难以满足大功率 IGBT散热要求。
发明内容
根据上述提出的技术问题， 为电力机车上的 IGBT电子元件提供一种安全可靠、散热效率 高、 制造工艺稳定的水冷式散热器。 本发明主要利用在槽基板的主流道上增设多条细的分流 道和挡块， 从而起到增大散热面积， 增加流体的扰动， 提高散热量的作用。 本发明采用的技 术手段如下：
一种 IGBT水冷式散热器， 包括进出水接头、平基板和槽基板， 所述进出口接头上设有两 个可供快速插拔水管的导向柱和两个进出水口， 所述进出口接头下端固定有所述平基板， 所 述平基板下端固定有所述槽基板， 其特征在于： 所述平基板上分别设有与所述槽基板上主流 道两端相连通的进水口和出水口， 所述主流道内设有至少两块可将所述主流道分割成多条分 流道的流道挡板， 所述分流道的个数比所述流道挡板的个数多 1个。
作为优选， 所述槽基板上设有可固定 IGBT电子元件的螺栓孔， 所述主流道的排布在未设 置所述螺栓孔的所述槽基板上。
作为优选， 所述主流道的弯折处设有可引起流经液体湍流的挡块。
作为优选， 所述平基板与所述槽基板的固定方式为焊接。
本发明通过在散热器的液体流道内， 即槽基板的主流道上增设了很多条细的流道挡板从 而形成多条分流道， 同时在主流道的弯折处设置挡块， 不仅增大了散热面积， 而且增加了流 体的扰动， 使冷却介质流过细小的分流道而强化传热， 有效地提高了散热器散热效率， 从而 达到了大功率 IGBT较苛刻的冷却要求。 附图说明
下面结合附图和具体实施方式对本发明作进一步详细的说明。
图 1是本发明的结构示意图。
图 2是本发明槽基板的结构示意图。
图 3是本发明槽基板的侧视图。
图中： 1、 进出水接头 11、 导向柱 12、 进出水口 2、 平基板 21、 进水口 22、 出水口 3、 槽基板 31、 流道挡板 32、 分流道 33、 挡块
具体实施方式
如图 1所示， 一种 IGBT水冷式散热器， 包括进出水接头 1、 平基板 2和槽基板 3， 所述 进出口接头 1上设有两个可供快速插拔水管的导向柱 11和两个进出水口 12， 两个进出水口 12分别与设置在所述平基板 2上的与所述槽基板 3上主流道两端相连通的进水口 21和出水 口 22相通 （如图 3所示）。 在所述槽基板 3 (如图 2所示） 上铣削出可供冷却液体流经的带 有多块流道挡板 31的主流道， 所述流道挡板 31与所述槽基板 3为一体结构， 即通过铣削加 工成形； 所述流道挡板 31将主流道分成多条分流道 32， 所述分流道 32的个数比所述流道挡 板 31的个数多 1个； 所述流道挡板 31的个数可根据散热需要适当的增加或者减少， 所述主 流道在所述槽基板 3上的分布形式可以为 "几"字形， "W"形， "回"字形， 矩形或其它适于 加工在所述槽基板 3上的形式均可， 而据本技术领域技术人员熟知的类似于 "几"字形的分 布结构是最易于实现的， 且达到的散热效果也较好的； 另外， 在所述主流道的弯折处还设有 可引起流经液体湍流的挡块 33， 所述挡块 33同样与所述槽基板 3为一体结构， 即通过铣削 加工成形； 在所述槽基板 3上无主流道的位置设有多个可固定 IGBT电子元件的螺栓孔。所述 进出口接头 1下端固定有所述平基板 2， 所述平基板 2下端与所述槽基板 3钎焊固定， 所述 平基板 2上同样设有与所述槽基板 3上的螺栓孔位置相对应的螺栓孔，用于固定 IGBT电子元 件， 所述平基板 2主要是对所述槽基板 3上的流道起密封作用， 使冷却流体有一个封闭的流 动空间。
本发明所述的流道挡板 31的排布方式不仅仅局限于平行排布，也可交叉排布或者其他可 以实现的排布方式， 平行排布仅为本发明较优的设计方式之一而且加工方便易于实现。
根据热传基本方程式：
Φ =ΚΑ Δ ΐπι
式中： φ一传热热流量， W;
Κ一总传热系数， W/ (m2 · K) ;
A—传热面积， m2; A tm—传热平均温差， 系对数平均温差乘以板片组合校正系数， V。
可知， 在所述槽基板 3上增设多个流道挡板 31， 从而将主流道分成多个分流道 32， 相当 于增大了流体的传热面积， 即增加了传热热量。 根据散热热量需要， 合理增设、 分布流道挡 板 32， 即可达到散热效果。
以上所述， 仅为本发明较佳的具体实施方式， 但本发明的保护范围并不局限于此， 任何 熟悉本技术领域的技术人员在本发明揭露的技术范围内， 根据本发明的技术方案及其发明构 思加以等同替换或改变， 都应涵盖在本发明的保护范围之内。

Claims

权 利 要 求 书
1、 一种 IGBT水冷式散热器， 包括进出水接头 （1)、 平基板（2)和槽基板 (3)， 所述进出口接头 （1) 上设有两个可供快速插拔水管的导向柱 （11) 和两 个进出水口 （12)， 所述进出口接头 （1) 下端固定有所述平基板 （2)， 所述平 基板 （2) 下端固定有所述槽基板 （3)， 其特征在于： 所述平基板 （2) 上分别 设有与所述槽基板 （3) 上主流道两端相连通的进水口 （21) 和出水口 （22)， 所述主流道内设有至少两块可将所述主流道分割成多条分流道 （32) 的流道挡 板 （31)， 所述分流道 （32) 的个数比所述流道挡板 （31) 的个数多 1个。
2、 根据权利要求 1所述的 IGBT水冷式散热器， 其特征在于： 所述槽基板 (3) 上设有可固定 IGBT电子元件的螺栓孔， 所述主流道的排布在未设置所述 螺栓孔的所述槽基板 （3) 上。
3、 根据权利要求 1或 2所述的 IGBT水冷式散热器， 其特征在于： 所述主 流道的弯折处设有可引起流经液体湍流的挡块 （33)。
4、 根据权利要求 1所述的 IGBT水冷式散热器， 其特征在于： 所述平基板 (2) 与所述槽基板 （3) 的固定方式为焊接。
PCT/CN2012/085105 2012-08-30 2012-11-23 Igbt水冷式散热器 WO2014032365A1 (zh)

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CN104735958A (zh) * 2015-01-14 2015-06-24 深圳市英维克科技股份有限公司 一种液冷式热管散热器
CN113891546B (zh) * 2021-11-02 2023-05-16 中国电子科技集团公司第二十九研究所 一种嵌入增强结构微流道的印制电路板及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2696126Y (zh) * 2004-04-06 2005-04-27 谢步明 Igbt迷宫式水冷散热器
CN201332092Y (zh) * 2008-12-29 2009-10-21 西安机电研究所 Igbt模块敞开式水冷散热器
CN201623026U (zh) * 2009-12-23 2010-11-03 中国北车集团大连机车研究所有限公司 Igbt板式水冷却器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
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CN202772128U (zh) * 2012-08-30 2013-03-06 中国北车集团大连机车研究所有限公司 Igbt水冷式散热器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2696126Y (zh) * 2004-04-06 2005-04-27 谢步明 Igbt迷宫式水冷散热器
CN201332092Y (zh) * 2008-12-29 2009-10-21 西安机电研究所 Igbt模块敞开式水冷散热器
CN201623026U (zh) * 2009-12-23 2010-11-03 中国北车集团大连机车研究所有限公司 Igbt板式水冷却器

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