WO2014013970A1 - 半導体封止用エポキシ樹脂組成物及び半導体装置の製造方法 - Google Patents
半導体封止用エポキシ樹脂組成物及び半導体装置の製造方法 Download PDFInfo
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- WO2014013970A1 WO2014013970A1 PCT/JP2013/069252 JP2013069252W WO2014013970A1 WO 2014013970 A1 WO2014013970 A1 WO 2014013970A1 JP 2013069252 W JP2013069252 W JP 2013069252W WO 2014013970 A1 WO2014013970 A1 WO 2014013970A1
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- epoxy resin
- resin composition
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- viscosity
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Classifications
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- C08G59/245—Di-epoxy compounds carbocyclic aromatic
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- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
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- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
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- C08G59/4223—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof aromatic
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G59/44—Amides
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/36—Silica
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2190/00—Compositions for sealing or packing joints
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/16—Applications used for films
- C08L2203/162—Applications used for films sealable films
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to an epoxy resin composition for semiconductor encapsulation and a method for manufacturing a semiconductor device, and more specifically, an epoxy resin composition for encapsulation that can be particularly suitably applied to a resin-first flip chip mounting of a Cu post chip, and The present invention relates to a method for manufacturing a semiconductor device using a Cu post chip.
- flip chip mounting As a method of mounting a semiconductor chip on a circuit board, flip chip mounting is increasing in response to the demand for further lighter and thinner packages.
- flip chip mounting conventionally referred to as “resin-first mounting”, a sealing resin is first supplied onto a substrate, and then the chip is crimped to a circuit on the substrate to make an electrical connection, and then sealed. A method of curing the stop resin is performed.
- a sealing resin having a latent thickening effect by blending acrylic polymer fine particles in a relatively small amount of 0.1 to 5 phr. is disclosed in Patent Document 1.
- this sealing resin is a sealing agent adapted for a wire bonding type IC chip, and does not solve the above-mentioned problems.
- the present invention is particularly suitable for resin post-flip type flip chip mounting of a Cu post chip, and provides a sealing epoxy resin composition capable of suppressing defects due to void generation and a method for manufacturing a semiconductor device using the Cu post chip. The purpose is to do.
- the present invention relates to an epoxy resin (A), a curing agent (B), a curing accelerator (C) and 3 to 64 parts by weight of a volume average primary particle size of 0.2 to 10 ⁇ m with respect to 100 parts by weight of (A). It is the epoxy resin composition for semiconductor sealing for flip chip mounting containing the heating-type thickening resin particle (D) of these.
- the present invention also includes a step (1) of supplying a liquid epoxy resin composition for semiconductor encapsulation to an electrode surface of a substrate having electrodes, and a step of increasing the viscosity of the resin composition by heating the substrate. (2) and the semiconductor chip on which the bumps are formed is filled into the resin composition with increased viscosity while being pressed and applied under pressure to the gap between the substrate and the semiconductor chip. It is also a method of manufacturing a semiconductor device formed by flip-chip mounting, characterized by having the step (3).
- the epoxy resin composition for sealing of the present invention maintains a liquid state that can be supplied at room temperature and is heated by the above-described configuration, whereby the epoxy resin composition is thickened by the heated thickening resin particles.
- the heating-type thickening resin particles are acrylic resin particles
- the viscosity of the epoxy resin composition decreases as the temperature increases from room temperature, while the acrylic resin particles swell in the epoxy resin as the temperature rises. It starts and becomes a cause of viscosity increase.
- the viscosity of the epoxy resin composition starts to increase, and the epoxy resin composition becomes highly viscous.
- the epoxy resin composition has a viscosity profile up to curing, which can be cured while maintaining a high viscosity. Accordingly, the resin viscosity can be maintained at a certain level when the resin is spread by the pressure applied to the chip in the resin-first mounting.
- the composition of the present invention solves the problems that have been manifested in the resin post-mounting mounting of Cu post chips, and in particular, realizes resin-first flip-chip mounting with good workability while suppressing defects due to the occurrence of voids. And can be used particularly preferably in a method of manufacturing a semiconductor device using a Cu post chip.
- an epoxy resin generally used as a sealing resin can be applied.
- bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AD type epoxy resin, Naphthalene type epoxy resin, biphenyl type epoxy resin, glycidyl amine type epoxy resin, alicyclic epoxy resin, dicyclopentadiene type epoxy resin, polyether type epoxy resin, silicone modified epoxy resin and the like can be mentioned. These may be used alone or in combination of two or more.
- an epoxy resin that is solid at room temperature can be combined with an epoxy resin that is liquid at room temperature so as to be liquid at room temperature.
- naphthalene type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, and bisphenol AD type epoxy resin are preferable, and naphthalene type epoxy resin is more preferable in terms of moisture resistance.
- the curing agent (B) a curing agent that can be used for an epoxy resin can be used.
- an acid anhydride is preferable, for example, hexahydrophthalic anhydride, alkylhexahydrophthalic anhydride, alkyltetrahydroanhydride. Mention may be made of phthalic acid, trialkyltetrahydrophthalic anhydride, methyl nadic anhydride, methylnorbornane-2,3-dicarboxylic acid. These may be used alone or in combination of two or more. Of these, trialkyltetrahydrophthalic anhydride is preferred from the viewpoint of low outgassing.
- the alkyl group of the trialkyltetrahydrophthalic anhydride is preferably a linear or branched alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and more preferably 1 to 4 carbon atoms. It is an alkyl group. Of the trialkyl groups, each alkyl group may be the same or different.
- the amount of the curing agent (B) is such that the number of moles of the curing agent functional group is 0.6 to 1.2 times the number of moles of the epoxy group in the epoxy resin (A) in the composition. 0.7 to 1.0 times is more preferable.
- the blending amount of the curing agent is less than the above range, curing may be poor, and when it is large, the curing agent may bleed.
- a curing accelerator (C) is used to accelerate the reaction between the epoxy resin and the curing agent.
- the curing accelerator (C) one that promotes the reaction between the epoxy resin (A) and the curing agent (B) can be used.
- the curing agent (B) is an acid anhydride
- imidazole is used.
- examples thereof include a system-based curing accelerator, a phosphorus-based curing accelerator, and a urea-based curing accelerator. Of these, imidazole curing agents are preferred from the viewpoint of reactivity. These may be used alone or in combination of two or more.
- the blending amount of the curing accelerator (C) varies depending on the type, but generally 3 to 15 parts by weight is preferable with respect to 100 parts by weight of the epoxy resin (A) from the viewpoint of curing temperature, and 5 to 10 parts by weight. Part is more preferred.
- the curing accelerator (C) may be a microcapsule type curing accelerator in which a curing accelerator compound is encapsulated in a coating shell (ie, outer shell) substance.
- a curing accelerator compound examples include Novacure HX-3088 and Novacure HX-3941 (both are trade names. Adducts of imidazole compounds and epoxy resins. Both are manufactured by Asahi Kasei Epoxy Corporation).
- the blending amount is an amount converted to an effective curing accelerating compound amount.
- the heating-type thickening resin particles (D) may be anything as long as they can swell in the epoxy resin composition by heating and can thicken the composition.
- Vinyl resin, polyamide resin, acrylic resin particles, preferably acrylic resin particles having a volume average primary particle size of 0.2 to 10 ⁇ m, for example, can be used.
- the particle size is 0.2 ⁇ m or more, the dispersibility to the epoxy resin is good, and when it is 10 ⁇ m or less, the connectivity between the chip and the substrate is good.
- the thickness is preferably 0.5 to 3 ⁇ m.
- the volume average primary particle size can be measured by diluting the acrylic resin particle emulsion with ion-exchanged water and using a laser diffraction / scattering particle size distribution analyzer (for example, LA-910W manufactured by Horiba, Ltd.).
- a laser diffraction / scattering particle size distribution analyzer for example, LA-910W manufactured by Horiba, Ltd.
- heating type thickening resin particles (D) examples include (meth) acrylates (eg, alkyl (eg, methyl, ethyl, propyl, butyl, octyl, etc.) (meth) acrylate, phenyl (meth) acrylate, etc.), functional Homogeneous monomers such as group-containing (meth) acrylates (eg, 2-hydroxyethyl (meth) acrylate, glycidyl (meth) acrylate, etc.), acrylic acids (eg, (meth) acrylic acid, crotonic acid, itaconic acid, etc.) Or the acrylic resin particle which consists of a copolymer can be mentioned.
- acrylates eg, alkyl (eg, methyl, ethyl, propyl, butyl, octyl, etc.
- functional Homogeneous monomers such as group-containing (meth) acrylates (eg, 2-hydroxyeth
- the acrylic resin particles may be particles having a core-shell structure.
- Particles having a core-shell structure can be obtained, for example, by polymerizing shell particles in the presence of core particles, and the method is well known to those skilled in the art.
- examples of the shell polymer include copolymers of monomers such as methyl (meth) acrylate, n-, i- or t-butyl (meth) acrylate and (meth) acrylic acid (for example, these components). Are contained in an amount of 55 to 79.5 mol%, 20 to 40 mol%, and 0.5 to 10 mol%, respectively.
- examples of the core polymer include copolymers of monomers such as methyl (meth) acrylate and n-, i- or t-butyl (meth) acrylate (for example, these components are added in an amount of 20 to 70 mol% and 30 to 30 mol%, respectively). 80 mol%).
- the weight ratio of the core polymer to the shell polymer can be 10/90 to 90/10.
- the acrylic resin particles include those that swell in the epoxy resin composition by heating and those that swell and dissolve in the epoxy resin composition by heating, but those that swell and dissolve from the viewpoint of thickening are preferred.
- the amount of the heating-type thickening resin particles (D) is preferably 3 to 64 parts by weight per 100 parts by weight of the epoxy resin from the viewpoint of the viscosity of the resin composition during heating. 6 to 50 parts by weight is more preferable.
- an inorganic filler can be further blended.
- the inorganic filler include inorganic particles such as silica filler (for example, fused silica and crystalline silica), quartz glass powder, calcium carbonate, and aluminum hydroxide. Of these, silica filler is preferable, and fused silica is more preferable.
- the blending amount of the inorganic filler is preferably 30 to 67 parts by weight and more preferably 55 to 62 parts by weight with respect to 100 parts by weight of the entire resin composition from the viewpoint of the viscosity of the composition at the time of supply.
- a silane coupling agent when using an inorganic filler, a silane coupling agent can be used.
- the silane coupling agent include 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 2- (3, 4-Epoxycyclohexyl) ethyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, and the like. These can be used alone or in combination of two or more.
- the compounding amount of the silane coupling agent is preferably 0.01 to 5 parts by weight, and more preferably 0.1 to 2 parts by weight with respect to 100 parts by weight of the entire resin composition.
- additives can be used as long as the object of the present invention is not impaired.
- additives include an antifoaming agent, a leveling agent, a low stress agent, and a pigment.
- composition of the present invention effectively suppresses foaming during heat-curing by mixing each component in a predetermined ratio, stirring for 60 to 120 minutes, and then defoaming under reduced pressure. Can do.
- the composition of the present invention preferably has a thickening start temperature of 50 to 120 ° C. and a thickening start temperature of 60 to 100 ° C. under measurement conditions of a frequency of 1 Hz and a heating rate of 10 ° C./min. It is more preferable.
- the viscosity increase starting temperature is a temperature at the minimum viscosity when the sealing resin starts to increase in viscosity only when the temperature rises when measured by the dynamic viscoelasticity measurement method using the rheometer under the above-described measurement conditions. This can be determined from the change in measured value of temperature versus viscosity.
- the composition of the present invention preferably has a viscosity of 1 to 300 Pa ⁇ s in the range of 15 ° C. or higher and lower than 50 ° C. from the viewpoint of workability.
- the viscosity can be adjusted by the blending amount of the heating type thickening resin particles (D) and the blending amount of the inorganic filler.
- the curing temperature of the composition of the present invention can be adjusted by the type and blending amount of the curing agent and the curing accelerator. Specific curing conditions in flip chip mounting will be described in the following step (5).
- the manufacturing method of the present invention includes a step (1) of supplying a liquid epoxy resin composition for encapsulating a semiconductor to an electrode surface of a substrate having electrodes, and heating the substrate to increase the viscosity of the resin composition. Step (2), and the semiconductor chip on which the bumps are formed is spread on the gap between the substrate and the semiconductor chip while applying pressure to the resin composition with increased viscosity while heating. And a step (3) of filling the semiconductor device by flip chip mounting.
- the production method of the present invention can further include a step (4) of electrically connecting bumps to the electrode surface on the substrate, and a step (5) of heating and curing the resin composition. .
- composition of the present invention can be suitably used.
- a substrate is prepared by applying a predetermined solder resist pattern on a substrate on which a circuit is formed.
- a liquid semiconductor-sealing epoxy resin composition preferably the composition of the present invention, is applied to the surface of the substrate on which the chip is disposed (that is, the electrode surface) by a printing method or a dispensing method (step ( 1)).
- the resin composition is supplied to the substrate in a temperature range of 15 ° C. or higher and lower than 50 ° C.
- the composition of the present invention is liquid, and preferably has a viscosity of 1 to 300 Pa ⁇ s.
- the application amount is an amount necessary for sealing, and is a minimum amount that is not too much.
- the substrate is heated to increase the viscosity of the resin composition (step (2)).
- the substrate on which the epoxy resin composition is supplied to the electrode surface is heated by means such as a hot plate or an oven to increase the viscosity of the resin composition.
- the heating temperature is 50 to 120 ° C. and the heating time is 1 to 30 minutes.
- the viscosity of the epoxy resin composition having a high viscosity is desirably in the range of 10 to 4000 Pa ⁇ s. This viscosity refers to a viscosity of 1 Hz according to a dynamic viscoelasticity measurement method.
- a chip having a Cu post is generally disposed at a predetermined position by a jig, and the resin composition is applied to the substrate while pressing and applying pressure to the substrate having the resin composition with increased viscosity under heating. And are spread and filled in the gap between the flip chip and the flip chip (step (3)).
- the heating temperature it is desirable that the resin temperature at the time of pressing and adding pressure is 150 to 180 ° C.
- the pressing speed for pressing the chip against the substrate is preferably 0.01 to 5 mm / s.
- the pressurizing pressure condition is generally 1 to 15 g / post, preferably 3 to 10 g / post, and the heating time is generally 0.5 to 10 seconds, preferably 1 to 5 seconds. It is.
- the temperature rise can be continued until the sealing resin is cured while maintaining a high viscosity.
- the Cu post is disposed at the predetermined connection position on the substrate.
- the solder provided at the tip of each is melted, and the Cu posts are electrically connected by fusion.
- the step (4) is achieved by heating to a solder melting temperature or higher.
- the melting temperature is generally 200 to 300 ° C. Therefore, for example, by raising the temperature to the solder melting temperature or higher in the step (3), the step (3) and the step (4) can be performed practically simultaneously.
- step (5) the resin composition is cured by heating.
- the heating temperature is, for example, 200 to 300 ° C. as the resin temperature, and the heating time is 0.5 to 10 seconds. Therefore, for example, if the step (5) is set to a solder melting temperature or higher, solder melting can be realized, and the step (4) and the step (5) can be performed practically simultaneously. Further, after-curing may be performed if desired.
- the temperature and time conditions are preferably 120 to 180 ° C., more preferably 120 to 150 ° C. and 30 to 120 minutes.
- step (4) can be performed after the step (5).
- the semiconductor device of the present invention is not particularly limited, and examples thereof include an integrated circuit device used for electronic devices such as a mobile phone, a smartphone, a mobile device, and a laptop computer in which a Cu post chip is flip-chip mounted.
- Viscosity stability The viscosity at 40 ° C. was measured over time by a rheometer (TA Instruments, AR-G2, hereinafter the same) and evaluated. Evaluation A: Viscosity is 1.5 times or less after 6 hours B: Viscosity is 1.5 times or less after 3 hours (5) Viscosity (25 ° C.) At 25 ° C., the viscosity was measured with an HBT rotary viscometer and the viscosity at 10 rpm was read. (6) Viscosity (after 80 minutes at 80 ° C) Using a rheometer, the viscosity after 10 minutes of reading at 80 ° C. was read.
- Viscosity start temperature Using a rheometer, the temperature at which the viscosity of the sealing resin increased was measured when measured at a frequency of 1 Hz and a heating rate of 10 ° C./min. In addition, the thing whose viscosity increase was not seen even if it heated up to 120 degreeC was set to "no viscosity increase.”
- Epoxy resin 1,6-bis (2,3-epoxypropoxy) naphthalene Curing agent: Trialkyltetrahydroxyphthalic anhydride acrylic rubber particles (1): F301 (trade name) manufactured by Ganz Kasei Co., Ltd. Acrylic resin having an average particle size of 2 ⁇ m Particle acrylic rubber particles (2): JF003 (trade name) manufactured by Mitsubishi Rayon Co., Ltd. Acrylic resin particles acrylic rubber particles having an average particle size of 1 ⁇ m (3): JF001 (trade name) manufactured by Mitsubishi Rayon Co., Ltd. acrylic resin particles acrylic having an average particle size of 1 ⁇ m Rubber particles (4): F320 (trade name) manufactured by Ganz Kasei Co., Ltd.
- Acrylic resin particles with an average particle diameter of 1 ⁇ m Acrylic rubber particles (5): Metablene C-140A (trade name) manufactured by Mitsubishi Rayon Co., Ltd.
- Silica filler Average particles Diameter 2.0 ⁇ m (spherical fused silica)
- Silane coupling agent Epoxy silane curing accelerator: Imidazole-based curing acceleration
- composition of the present invention was free of voids, which are necessary conditions for flip-chip mounting of Cu post chips, and realized properties such as excellent dispensing properties and connectivity.
- composition of the comparative example did not show sufficient performance in terms of voids, dispensing properties, and connectivity.
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Abstract
Description
本発明はまた、電極を有する基板の電極面に、液状の半導体封止用エポキシ樹脂組成物を供給する工程(1)、前記基板を加熱することにより、前記樹脂組成物を高粘度化する工程(2)、及び、バンプを形成した半導体チップを前記高粘度化した樹脂組成物に、加熱下、押付加圧しつつ、前記樹脂組成物を前記基板と前記半導体チップとの間隙に押し広げて充填する工程(3)を有することを特徴とするフリップチップ実装してなる半導体装置の製造方法でもある。
本発明の組成物は、Cuポストチップの樹脂先置き型実装において顕在化した課題を解決し、とくに、ボイド発生による欠陥を抑制しつつ、作業性の良好な樹脂先置き型フリップチップ実装を実現でき、Cuポストチップを用いた半導体装置の製造方法に特に好適に使用可能である。
表1及び表2に示す各成分及び配合量(重量部)でそれぞれ配合して室温で混合し、均一な液状組成物をそれぞれに調製した。
得られた各組成物を使用して、以下の項目について、下記の方法で測定し、評価した。結果を表1及び表2に示した。
基板上に各組成物を塗布量3mgとなるように25℃でディスペンスした。次に、基板をホットプレートで80℃、10分間加熱した後、当該基板とチップを圧接した。圧接条件は、押付加圧時の樹脂温度が160℃になるよう加熱下、押付速度0.3mm/秒、加圧5g/ポスト、3秒間で行った。この圧接したサンプルをピーク温度260℃、4秒間加熱し、半田溶融及び封止樹脂を硬化させて評価サンプルを作成した。超音波探索、平面研磨によりボイドの有無を観察し、評価した。使用パッケージ:MB50-010JY CR/WALTS社製。
評価
◎:封止樹脂中にボイドが見られない
○:封止樹脂中の一部にボイドが存在するが、バンプ間にまたがるボイドは存在しない
×:封止樹脂の全体にボイドが存在するか、またはバンプ間にまたがるボイドが存在する
(2)ディスペンス性
武蔵社製金属ニードル20Gを使用して25℃で封止樹脂を吐出し、評価した。
評価
◎:3秒以内に4mg吐出可能
○:3~5秒以内に4mg吐出可能
×:4mg吐出するのに5秒超かかる
(3)接続性
超音波探索、断面観察によりハンダ形状を調べ、評価した。使用パッケージ:MB50-010JY/WALTS社製。
評価
○:基板側とチップのバンプ側のハンダが接続している
×:基板側とチップのバンプ側のハンダが接続していない、もしくはハンダ接合部の形状がくびれている
40℃における粘度を経時的にレオメーター(TAインスツルメント社製、AR-G2。以下同じ。)により測定し、評価した。
評価
◎:6時間後に粘度が1.5倍以下である
○:3時間後に粘度が1.5倍以下である
(5)粘度(25℃)
25℃において、HBT回転式粘度計により測定し、10rpmでの粘度を読み取った。
(6)粘度(80℃、10分経過後)
レオメーターにより、80℃に固定して10分後の粘度を読み取った。
(7)増粘開始温度
レオメーターにより、周波数1Hz、昇温速度10℃/minで測定したときに封止樹脂が粘度上昇したときの温度を読み取った。なお、120℃まで昇温しても粘度上昇が見られなかったものは「増粘なし」とした。
エポキシ樹脂:1,6-ビス(2,3-エポキシプロポキシ)ナフタレン
硬化剤:トリアルキルテトラヒドロキシ無水フタル酸
アクリルゴム粒子(1):ガンツ化成社製F301(商品名)平均粒径2μmのアクリル樹脂粒子
アクリルゴム粒子(2):三菱レイヨン社製JF003(商品名)平均粒径1μmのアクリル樹脂粒子
アクリルゴム粒子(3):三菱レイヨン社製JF001(商品名)平均粒径1μmのアクリル樹脂粒子
アクリルゴム粒子(4):ガンツ化成社製F320(商品名)平均粒径1μmのアクリル樹脂粒子
アクリルゴム粒子(5):三菱レイヨン社製メタブレンC-140A(商品名)アクリル樹脂粒子
シリカフィラー:平均粒径2.0μm(球状溶融シリカ)
シランカップリング剤:エポキシシラン
硬化促進剤:イミダゾール系硬化促進
Claims (18)
- エポキシ樹脂(A)、硬化剤(B)、硬化促進剤(C)及び前記(A)100重量部に対して3~64重量部の、体積平均一次粒径0.2~10μmの加熱型増粘樹脂粒子(D)を含有する、フリップチップ実装のための半導体封止用エポキシ樹脂組成物。
- 加熱型増粘樹脂粒子(D)は、アクリル樹脂粒子である請求項1記載の組成物。
- 加熱型増粘樹脂粒子(D)の含有量は、6~50重量部である請求項1又は2に記載の組成物。
- 硬化剤(B)は、酸無水物である請求項1~3のいずれかに記載の組成物。
- 硬化促進剤(C)をエポキシ樹脂(A)100重量部に対して3~15重量部含有する請求項1~4のいずれかに記載の組成物。
- さらに、樹脂組成物全体100重量部に対して、無機フィラーを30~67重量部含有する請求項1~5のいずれかに記載の組成物。
- 周波数1Hz、10℃/分の昇温速度における組成物の増粘開始温度が50~120℃である請求項1~6のいずれかに記載の組成物。
- 増粘開始温度が60~100℃である請求項7記載の組成物。
- 15℃以上、50℃未満の範囲における組成物の粘度が1~300Pa・sである請求項1~8のいずれかに記載の組成物。
- フリップチップは、Cuポストの先端にソルダー層を形成したCuバンプを有するフリップチップである請求項1~9のいずれかに記載の組成物。
- フリップチップ実装は、樹脂先置き型実装である請求項1~10のいずれかに記載の組成物。
- 電極を有する基板の電極面に、液状の半導体封止用エポキシ樹脂組成物を供給する工程(1)、前記基板を加熱することにより、前記樹脂組成物を高粘度化する工程(2)、及び、バンプを形成した半導体チップを前記高粘度化した樹脂組成物に、加熱下、押付加圧しつつ、前記樹脂組成物を前記基板と前記半導体チップとの間隙に押し広げて充填する工程(3)を有することを特徴とするフリップチップ実装してなる半導体装置の製造方法。
- 前記工程(1)において、前記樹脂組成物の供給時の温度が15℃以上、50℃未満であり、粘度が1~300Pa・sであり、前記工程(2)において、高粘度化したエポキシ樹脂組成物の粘度が10~4000Pa・sの範囲である請求項12記載の製造方法。
- 前記工程(2)において、加熱条件は、加熱温度50~120℃、加熱時間1~30分である請求項12又は13記載の製造方法。
- 前記工程(3)において、押付加圧時の樹脂温度が150~180℃となるよう加熱下、押付速度0.01~5mm/sで押付加圧する請求項12~14のいずれかに記載の製造方法。
- 更に、前記基板上の電極面に、バンプを電気的に接続する工程(4)、及び、前記樹脂組成物を加熱して硬化させる工程(5)を有する請求項12~15のいずれかに記載の製造方法。
- バンプは、Cuポストの先端にソルダー層を形成したCuバンプであり、電極を有する基板は、電極面以外がソルダーレジストで被膜された基板であって、前記工程(4)において、ソルダー溶融温度以上に加熱する請求項16記載の製造方法。
- 請求項1~11のいずれかに記載の組成物を半導体封止用エポキシ樹脂組成物として使用する請求項12~17のいずれかに記載の製造方法。
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JP2014525816A JP6218083B2 (ja) | 2012-07-19 | 2013-07-16 | 半導体封止用エポキシ樹脂組成物及び半導体装置の製造方法 |
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KR102039768B1 (ko) | 2019-11-01 |
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