WO2013187115A1 - 荷電粒子線装置 - Google Patents
荷電粒子線装置 Download PDFInfo
- Publication number
- WO2013187115A1 WO2013187115A1 PCT/JP2013/061010 JP2013061010W WO2013187115A1 WO 2013187115 A1 WO2013187115 A1 WO 2013187115A1 JP 2013061010 W JP2013061010 W JP 2013061010W WO 2013187115 A1 WO2013187115 A1 WO 2013187115A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sample
- voltage
- electron beam
- electrode
- primary electron
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/21—Means for adjusting the focus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/263—Contrast, resolution or power of penetration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0475—Changing particle velocity decelerating
- H01J2237/04756—Changing particle velocity decelerating with electrostatic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
- H01J2237/0492—Lens systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/21—Focus adjustment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/2602—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
- H01J2237/281—Bottom of trenches or holes
Definitions
- the present invention relates to a charged particle beam device such as a sample inspection device, a review device, or a pattern measurement device using a charged particle beam.
- a semiconductor device is manufactured by repeating a process of transferring a pattern formed on a photomask onto a wafer by lithography and etching.
- it is important to realize an early launch of a good yield and to maintain stable operation of the manufacturing process.
- it is essential to carry out in-line inspection of the wafer, quickly analyze the found defect, and use it for investigation of the cause of the defect occurrence and measures.
- automatic defect review technology and classification technology which rapidly review a large number of detected defects and classify them according to the cause of occurrence, are key.
- a review device of a scanning electron microscope (hereinafter sometimes referred to as a review SEM) which can be reviewed at high speed and high resolution has been commercialized.
- Defect position information on a semiconductor wafer is obtained from an optical defect inspection apparatus or the like.
- SEM an operation of finding problems in the manufacturing process is performed by capturing an image at a higher magnification than the optical defect inspection apparatus.
- the stage is moved to the defect position at high speed, the defect position is detected in the low magnification image mode of the SEM, and the defect is mainly imaged in the high magnification image mode of the SEM, and the high magnification image acquired in the high magnification image mode is analyzed And perform defect classification work.
- An energy filter is used to relatively increase the gradation of the space portion by suppressing the secondary electrons that occupy most of the signal electrons in the line portion.
- An energy filter is a high pass filter that can select signal electrons according to signal electron kinetic energy.
- Patent Document 1 a method is known in which signal electrons are allowed to pass through a metal mesh to which a voltage is applied, a decelerating electric field is formed on the signal electrons, and signal electrons are sorted out.
- Patent Document 2 a method is known in which an electrode is disposed on an objective lens, a voltage is applied to the electrode, a decelerating electric field is formed for signal electrons, and signal electrons that are passed are sorted. ing.
- Patent No. 4302316 (US6667476) Unexamined-Japanese-Patent No. 2006-294627 (US 2003/0042417)
- the conductive mesh is disposed on the optical axis and a voltage is applied to separate the signal electrons.
- the conductive mesh can be passed due to the restriction of the aperture ratio of the conductive mesh. The number of signal electrons decreases. Therefore, a sample image having a high signal-to-noise ratio can not be obtained.
- the objective lens is provided with an energy filter function, but it is necessary to arrange three electrodes, and the structure is complicated. If the number of electrodes is reduced to two, the two electrodes become dedicated to the energy filter, so the electrodes can not be used for focus adjustment. Therefore, although it is only necessary to use a change in the magnetic field of the objective lens for focus adjustment, the response of the change in the magnetic field is poor, and the throughput of the review SEM is reduced.
- An object of the present invention is to provide a charged particle beam apparatus having a configuration suitable for observing a high signal-to-noise ratio of a deep groove or a deep hole of a semiconductor device at a high throughput.
- the present application includes a plurality of means for solving the above problems, and an example thereof is an electron source for generating a primary electron beam, an objective lens for focusing the primary electron beam, and deflection of the primary electron beam.
- a deflector a detector for detecting secondary electrons or reflected electrons generated from a sample by irradiation of the primary electron beam, an electrode having a hole through which the primary electron beam passes, and a voltage for applying a negative voltage to the electrode
- a control power supply, and a retarding voltage control power supply generating an electric field for decelerating the primary electron beam on the sample by applying a negative voltage to the sample, the voltage applied to the electrode and the sample Focusing is performed with the difference between the voltage applied and the voltage being constant.
- the longitudinal cross-sectional view which shows schematic structure of the charged particle beam apparatus in a present Example.
- the schematic diagram of the line & space structure which is 1 type of a semiconductor pattern structure.
- the schematic diagram of the cross section of a line & space structure Schematic of a sample image when making voltage difference Vd into a negative voltage.
- requires the optimal value of the voltage difference Vd.
- the charged particle beam apparatus broadly includes an apparatus for capturing an image of a sample using a charged particle beam.
- charged particle beam devices include inspection devices using a scanning electron microscope, review devices, and pattern measurement devices.
- the present invention is also applicable to a general-purpose scanning electron microscope, and a sample processing apparatus and a sample analysis apparatus provided with the scanning electron microscope.
- defect is not limited to a defect of a pattern but broadly includes foreign matter, pattern dimensional abnormality, structural failure and the like.
- FIG. 1 is a schematic cross-sectional view showing an example of a scanning electron microscope in the present embodiment.
- a vacuum container, a wafer transfer system and the like necessary for the scanning electron microscope are omitted.
- a voltage is applied between the cathode 1 and the first anode 2 by the high voltage control power source 15 controlled by the controller 22, and a predetermined emission current is drawn from the cathode 1.
- the primary electron beam 4 emitted from the cathode 1 is accelerated and the lens system in the subsequent stage Proceed to An unnecessary area of the primary electron beam 4 is removed by the diaphragm plate 5, and the primary electron beam 4 is focused to the imaging position 23 by the focusing lens 6 controlled by the focusing lens control power supply 16.
- the primary electron beam 4 is focused as a minute spot on the sample 12 by the objective lens 11 controlled by the objective lens control power supply 20, and deflected by the deflection coil 10 controlled by the deflection coil control power supply 19. It is scanned in two dimensions.
- the scanning signal of the deflection coil 10 is controlled by the deflection coil control power supply 19 according to the observation magnification.
- the scanning range of the primary electron beam 4 is determined by the observation magnification.
- the primary electron beam 4 passes through the objective lens 11 while having kinetic energy equal to or higher than the acceleration voltage, and after passing, the primary electron beam 4 is decelerated and collides with the sample 12 with kinetic energy of the acceleration voltage. Since the primary electron beam 4 can pass through the objective lens 11 with higher kinetic energy, aberration can be reduced and resolution is improved.
- the optical system of the scanning electron microscope may include other lenses, electrodes, and detectors in addition to this, and may partially differ from the above, and the configuration of the charged particle optical system is limited to this. Absent.
- Signal electrons generated from the sample 12 by irradiation of the primary electron beam 4 are classified into secondary electrons 7 and reflected electrons 13 according to kinetic energy.
- the voltage applied to the sample 12 accelerates the secondary electrons 7 in the direction of the conductor plate 8 and passes through the objective lens.
- the secondary electron 7 has kinetic energy close to the voltage applied to the sample 12 (for example, -100 eV to -120 eV when the voltage applied to the sample 12 is -100 V), and the backscattered electron 13 is the primary electron beam It has a kinetic energy close to 4 (eg, -800 eV to -1000 eV when the kinetic energy of the primary electron beam 4 is 1 keV).
- the secondary electrons 7 and the reflected electrons 13 travel in the direction of the cathode 1 of the objective lens 11 and then collide with the conductor plate 8 having an opening through which the primary electron beam 4 can pass to generate tertiary electrons 14.
- the tertiary electrons 14 are detected by the detector 9, amplified by the signal amplifier 18, and synchronized with the scanning signal of the deflection coil 10 by the image display device 21 to be displayed as a sample image.
- the scanning electron microscope further includes a control unit that controls the operation of each part, and an image generation unit that generates an image based on the signal output from the detector (not shown).
- the control unit and the image generation unit may be configured as hardware by a dedicated circuit board, or may be configured by software executed by a computer connected to a scanning electron microscope.
- When configured by hardware it can be realized by integrating a plurality of processing units to execute processing on a wiring board or in a semiconductor chip or package.
- When configured by software it can be realized by installing a high-speed general purpose CPU in a computer and executing a program that executes desired arithmetic processing. It is also possible to upgrade an existing device by a recording medium on which this program is recorded.
- a negative voltage is applied to the electrode 24 disposed in the objective lens 11 by the voltage control power supply 25.
- the electrode 24 has a cylindrical shape surrounding the optical axis of the primary electron beam, and is disposed in the magnetic path of the objective lens so that the primary electron beam passes through the hole of the cylinder.
- the secondary electrons 7 generated from the sample are decelerated, and the secondary electrons 7 can not fly in the direction of the conductor plate 8 and have a trajectory 7 a.
- the secondary electrons 7 can not reach the conductor plate 8, and the secondary electrons 7 are suppressed in the sample image, and the reflected electrons 13 become the dominant image.
- the sample image in which the ratio of the reflected electrons 13 is relatively increased is configured by suppressing the secondary electrons 7 of kinetic energy below a certain level, which is to adjust the negative voltage of the voltage difference Vd.
- the electrode 24 may be formed as a part of the magnetic path of the objective lens 11 and may be shared with the magnetic path of the objective lens.
- FIG. 2a shows a schematic view of a line & space structure which is a kind of semiconductor pattern structure formed on a wafer.
- FIG. 2 b is a schematic view of a cross section in the direction of AB in FIG. 2 a.
- the line portion 31 has a convex shape
- the space portion 30 has a concave shape.
- the primary electron beam 4 is irradiated to the concave space portion 30, there is no edge shape as at both ends of the line portion 31, and the secondary electrons 7 are hard to be emitted from the line portion 31.
- the line portion 31 is bright and the space portion 30 is relatively dark. If the space 30 has a shape defect due to the semiconductor process, the shape defect can not be detected.
- the gradation width of the brightness of the sample image (SEM image) is fixed. If tone values of the brightest part and the darkest part of the image exist in one image, adjustment is performed to lower the tone value of the entire image so that the tone value of the bright part falls within the tone width. Therefore, the tone value of the dark part becomes darker. Specifically, in the case where the gradation of the brightness of the sample image is 256 steps, if the line portion 31 has 200 gradations or more and the space portion 30 has 50 gradations or less, the shape defect portion can not be detected.
- FIG. 3 shows a schematic view of a sample image when the voltage difference Vd is a negative voltage.
- the line portion 31 has 100 gradations
- the space portion 30 has 70 gradations
- the shape defect portion of the space portion 30 can be detected.
- the bottom of the hole in the hole structure is relatively dark compared to the peripheral portion, making the bottom of the hole relatively bright by setting the voltage difference Vd to a negative voltage Can. The same applies to other sample structures.
- the voltage difference Vd has an optimum value depending on the line & space structure, the hole structure, the shape of the structural defect of the dark part, and the like. By setting the voltage difference Vd, it is possible to suppress the detection of the secondary electrons 7 having energy equal to or less than the kinetic energy obtained by adding the voltage difference Vd and the voltage of the sample 12.
- FIG. 4 shows the dependency of the voltage difference Vd on the ratio of the brightness gradation ratio of the dark part of the space part 30 to the bright part of the line part 31 and the signal-to-noise ratio. The ratio of the brightness gradation between the dark part and the light part increases in proportion to the voltage difference Vd.
- the secondary electrons 7 which are the main components of the signal electrons forming the sample image are suppressed by the increase of the voltage difference Vd, the signal-to-noise ratio of the sample image is lowered. Therefore, the optimum value of the voltage difference Vd is determined by the sequence shown in FIG.
- the field of view is moved by stage movement or the like to an observation target portion of a sample such as a line & space structure or a hole structure (step 100).
- the voltage difference Vd is determined, and the voltages of the electrode 24 and the sample 12 are set (step 101).
- the voltage difference Vd is 0V.
- Whether or not a structural defect in a dark area can be detected is determined by the structural defect detection software (step 102).
- the defective portion detection program makes the determination based on the ratio of the brightness gradation of the dark portion to the bright portion and the signal-to-noise ratio. If the determination is NO, the process returns to step 101 again, and the voltage difference Vd is changed by a predetermined voltage to be a negative voltage (step 101). For example, set -1V. This is repeated, the voltage difference Vd for which the determination is OK is determined, and the completion of the process is displayed (step 103).
- Defects on a semiconductor wafer are discretely distributed on the wafer.
- the observation position on the wafer changes for each defect.
- the wafer height changes due to the mechanical intersection of the device and the change in the wafer thickness. Therefore, it is necessary to have a function of adjusting the focus position of the primary electron beam 4 according to the wafer height.
- the response speed of the magnetic field change is, for example, on the order of several seconds and extremely slow due to the effect of the eddy current.
- the focal length of the objective lens 11 is changed by the time for changing the voltage of the electrode 24 or the sample 12. That is, it is determined by the response speed of the voltage control power supply 25 supplying the voltage to each or the retarding voltage control power supply 26 and is extremely fast.
- the response time due to the change in electric field is, for example, on the order of several tens of microseconds. Therefore, the focal length is changed by the change of the voltage of the electrode 24 to adjust the focus at high speed.
- the voltage of the sample 12 is constant at the voltage of the electrode 24 in focus, the voltage difference between the electrode 24 and the voltage of the sample 12 is not an optimal value, and there is a possibility that the structural defect in the dark part can not be detected.
- the focal length is changed by the change of the voltage of the sample 12 to adjust the focus at high speed.
- the voltage of the electrode 24 is constant at the voltage of the sample 12 in focus, the voltage difference between the electrode 24 and the voltage Vd of the sample 12 is not an optimum value, and there is a possibility that the structural defect in the dark part can not be detected.
- the focal length is changed by changing the voltage of the electrode 24 and the voltage of the sample 12 by equal voltages with equal polarity.
- the optimal value of the voltage difference Vd is -5 V
- the voltage of the electrode 24 is -105 V
- the voltage of the sample 12 is -100 V
- the optimal value of -5 V is maintained for the focus adjustment.
- the voltage is -95V and the voltage of sample 12 is -90V.
- the primary electron beam 4 is further accelerated in the space of the objective lens 11 by the increase of the voltage of the electrode 24, and the magnetic field of the objective lens 11 is constant, so the focal distance of the primary electron beam 4 is extended and focused toward the inside of the sample (overfocus ).
- the voltage of the sample 12 is also increased, so that the primary electron beam 4 is less likely to be decelerated directly above the sample 12, and the focal distance of the primary electron beam 4 is extended to focus in the direction inside the sample (overfocus).
- the focal point moves in the direction in which the focal length of the primary electron beam 4 extends, that is, in the direction to focus on the sample (overfocus), so the electrode under a constant voltage difference Vd
- the focal length of the primary electron beam 4 is extended, and the focus position can be moved to the overfocus side, which can be used for focus adjustment.
- the electrode 24 In order to decelerate the primary electron beam 4 by the electrode 24 and make it enter the objective lens, the electrode 24 is in a direction closer to the cathode 1 than the lens main surface of the objective lens 11, and the electric field of the electrode 24 is on the main surface of the objective lens 11.
- the electrode 24 is placed in the reachable range.
- the focal length increases or decreases with the same polarity with respect to the change in voltage of the electrode 24 and the sample 12, focusing per unit voltage rather than changing only one of the conventional electrode 24 or the sample 12 to focus
- the amount of distance change is as high as twice as high as that of the conventional one, and therefore, it is possible to cope with fluctuation of the wafer height more than twice as large as the conventional one.
- the center of the electrostatic lens formed by the electrode 24 and the center of the electrostatic lens formed by the sample 12 do not coincide due to mechanical error of the component holding the electrode 24 and the sample 12 or the like. Even if the primary electron beam 4 is adjusted to pass the electrostatic lens center of the electrode 24, the primary electron beam 4 passes off the electrostatic lens axis of the sample 12. For this reason, although the movement of the visual field due to the voltage change of the electrode 24 does not occur in the focus adjustment, the visual field position of the sample image fluctuates due to the voltage change of the sample 12. For this reason, there is a possibility that the structural defect portion to be observed is out of the field of view and can not be observed.
- the position of the visual field is corrected by applying an offset current to the deflection current of the deflection coil 10 in accordance with the applied voltage of the sample 12 or the electrode 24.
- the field position is corrected using an electrical field movement coil.
- the current value is set according to the voltage applied to the sample 12 or the electrode 24.
- the electric field moving coil can shift the scanning range as a whole by adding an offset to the scanning range of the primary electron beam by passing a current.
- An electric field moving coil is known as an image shift coil as described in Japanese Patent Laid-Open No. 10-97836.
- the visual field correction amount is acquired in advance as a preset value, stored in the control device 22, and the visual field position is corrected in conjunction with the applied voltage of the sample 12.
- the adjustment of the detection condition and the focus for the structural defect in the dark part is performed by the structural defect detection & focus adjustment program.
- FIG. 6 shows a program for detecting a structural defect and a parameter setting screen in the focus adjustment program.
- acceleration voltage when acquiring a sample image probe current, number of pixels of sample image, number of frames of sample image, step amount of voltage difference Vd per one routine of structural defect detection in structural defect detection program (D_Vd), voltage width to change from the image sharpness evaluation start point to the end point in the focus adjustment program (swing width W_Vf), step amount of voltage of the electrode 24 and sample 12 per one routine of image evaluation in the focus adjustment program D_Vf) can be set.
- the step amount (D_Vd) of the voltage difference Vd per routine is made smaller, the optimum condition capable of detecting a structural defect in a dark part can be obtained with higher accuracy.
- the voltage width (swing width W_Vf) to be changed from the start point to the end point of the image sharpness evaluation is made large when the fluctuation of the wafer height is large.
- the step amount (D_Vf) of the voltage of the electrode 24 and the sample 12 per routine becomes smaller, the sharpness of the sample image can be evaluated more finely, and the focus position can be adjusted with higher precision.
- FIG. 7 shows a sequence of a structural defect detection program and a focus adjustment program. This sequence is performed by the controller 22.
- the visual field is moved by stage movement or the like to the sample position where the dark portion structural defect is present (step 200).
- Each parameter is set on the screen of FIG. 6 (step 201).
- the voltage difference Vd set in FIG. 6 is set by the program (step 202). It is desirable that 0 V be set as the initial value of the voltage difference Vd.
- the voltage of the electrode 24 and the sample 12 is changed by the step amount (D_Vf) of the voltage of the electrode 24 and the sample 12 per one routine of image evaluation to obtain a sample image (Step 203).
- the sharpness of the sample image acquired in step 203 is evaluated by the structural defect detection program (step 204).
- Step number of times divided by the step amount (D_Vf) of the voltage of the electrode 24 and the sample 12 which changes the voltage (amplitude W_Vf) to change between the image sharpness evaluation start point and end point in the focus adjustment program in one routine 203 and step 204 are repeated.
- the voltage of the electrode 24 and the sample 12 having the highest image sharpness is set (step 205).
- the defective portion detection program makes the determination based on the ratio of the brightness gradation of the dark portion to the bright portion and the signal-to-noise ratio.
- step 207 the process is completed (step 207).
- the completion of the process may be displayed on a display device.
- FIG. 8 shows another focus adjustment method.
- Prepare a height measurement sensor (not shown) that can measure the wafer height.
- the relationship between the wafer height measured by the height measurement sensor and the voltage applied to the electrode 24 and the sample 12 with a certain voltage difference Vd preset by the user is acquired.
- the storage unit 27 connected to the control device 22 records the voltage of the electrode 24 as a preset value for each combination of the voltage difference Vd and the wafer height.
- the voltage applied to the sample 12 is obtained from the voltage difference Vd and the voltage of the electrode 24.
- the height of the wafer in the dark area is measured by the height measurement sensor.
- the voltage is set to the electrode 24 and the sample 12 at the optimum value of the voltage difference Vd based on the preset value recorded in the storage unit 27 to focus on the sample on the wafer.
- focus adjustment can be performed only by setting a preset value recorded in the control device 22 without performing the sequence as described in FIG. 7 each time the wafer position is moved. Focus adjustment can be performed faster than before.
- the present invention is not limited to the embodiments described above, but includes various modifications.
- the embodiments described above are described in detail in order to explain the present invention in an easy-to-understand manner, and are not necessarily limited to those having all the configurations described.
- part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment.
- each of the configurations, functions, processing units, processing means, etc. described above may be realized by hardware, for example, by designing part or all of them with an integrated circuit.
- each configuration, function, etc. described above may be realized by software by the processor interpreting and executing a program that realizes each function.
- Information such as a program, a table, and a file for realizing each function can be placed in a memory, a hard disk, a recording device such as an SSD (Solid State Drive), or a recording medium such as an IC card, an SD card, or a DVD.
- control lines and information lines indicate what is considered to be necessary for the description, and not all control lines and information lines in the product are necessarily shown. In practice, almost all configurations may be considered to be mutually connected.
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
本願は上記課題を解決する手段を複数含んでいるが、その一例を挙げるならば、一次電子線を発生する電子源と、前記一次電子線を集束する対物レンズと、前記一次電子線を偏向させる偏向器と、前記一次電子線の照射によって試料から発生する二次電子又は反射電子を検出する検出器と、前記一次電子線が通過する孔を有する電極と、前記電極に負電圧を印加する電圧制御電源と、前記試料に負電圧を印加することで前記試料上に前記一次電子線を減速させる電界を生成するリターディング電圧制御電源と、を備え、前記電極に印加される電圧と前記試料に印加される電圧との差を一定にしたまま焦点調整を行うことを特徴とする。
2 第一陽極
3 第二陽極
4 一次電子線
5 絞り板
6 集束レンズ
7,7a 二次電子
8 導体板
9 検出器
10 偏向コイル
11 対物レンズ
12 試料
13 反射電子
14 三次電子
15 高電圧制御電源
16 集束レンズ制御電源
18 信号増幅器
19 偏向コイル制御電源
20 対物レンズ制御電源
21 像表示装置
22 制御装置
23 結像位置
24 電極
25 電圧制御電源
26 リターディング電圧制御電源
27 記憶部
30 スペース部
31 ライン部
Claims (5)
- 一次電子線を発生する電子源と、
前記一次電子線を集束する対物レンズと、
前記一次電子線を偏向させる偏向器と、
前記一次電子線の照射によって試料から発生する二次電子又は反射電子を検出する検出器と、
前記一次電子線が通過する孔を有する電極と、
前記電極に負電圧を印加する電圧制御電源と、
前記試料に負電圧を印加することで前記試料上に前記一次電子線を減速させる電界を生成するリターディング電圧制御電源と、を備え、前記電極に印加される電圧と前記試料に印加される電圧との差を一定にしたまま焦点調整を行うことを特徴とする荷電粒子線装置。 - 請求項1に記載の荷電粒子線装置において、
前記電極と前記試料には等しい極性で等しい絶対値の電圧分変化させることで焦点調整が行われることを特徴とする荷電粒子線装置。 - 請求項1に記載の荷電粒子線装置において、
前記偏向器に流される電流に、前記試料への印加電圧に応じたオフセット電流を加えることを特徴とする荷電粒子線装置。 - 請求項1に記載の荷電粒子線装置において、さらに、
所定の電流を流すことで前記一次電子線での走査範囲を移動させる電気的視野移動コイルを備え、
前記試料への印加電圧に応じて前記電気的視野移動コイルに流す電流値を設定することを特徴とする荷電粒子線装置。 - 請求項1に記載の荷電粒子線装置において、さらに、
前記試料の高さを計測する高さ計測センサと、
前記差と前記試料の高さの組み合わせ毎に、前記電極に印加する電圧が記憶された記憶部と、を備え、
前記高さ計測センサによって計測された前記試料の高さと、予め設定された前記差とに基づいて、前記記憶部から読み出された前記電極に印加される電圧と、前記電極に印加される電圧と前記差によって決まる前記試料に印加される電圧とが設定されることを特徴とする荷電粒子線装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/407,117 US9324540B2 (en) | 2012-06-15 | 2013-04-12 | Charged particle beam device |
KR1020147030888A KR101685274B1 (ko) | 2012-06-15 | 2013-04-12 | 하전 입자선 장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-135297 | 2012-06-15 | ||
JP2012135297A JP5851352B2 (ja) | 2012-06-15 | 2012-06-15 | 荷電粒子線装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013187115A1 true WO2013187115A1 (ja) | 2013-12-19 |
Family
ID=49757953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/061010 WO2013187115A1 (ja) | 2012-06-15 | 2013-04-12 | 荷電粒子線装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9324540B2 (ja) |
JP (1) | JP5851352B2 (ja) |
KR (1) | KR101685274B1 (ja) |
WO (1) | WO2013187115A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106920723A (zh) * | 2017-03-06 | 2017-07-04 | 聚束科技(北京)有限公司 | 一种扫描聚焦***及电子束控制方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9564291B1 (en) * | 2014-01-27 | 2017-02-07 | Mochii, Inc. | Hybrid charged-particle beam and light beam microscopy |
US9881764B2 (en) * | 2016-01-09 | 2018-01-30 | Kla-Tencor Corporation | Heat-spreading blanking system for high throughput electron beam apparatus |
WO2018096610A1 (ja) * | 2016-11-24 | 2018-05-31 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
US11056310B2 (en) | 2017-01-12 | 2021-07-06 | Hitachi High-Tech Corporation | Charged-particle beam device |
WO2019038883A1 (ja) * | 2017-08-24 | 2019-02-28 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置およびそれを用いた観察方法、元素分析方法 |
JP6987233B2 (ja) * | 2018-05-22 | 2021-12-22 | 株式会社日立ハイテク | 荷電粒子線装置及びその軸調整方法 |
DE112018007498T5 (de) * | 2018-05-22 | 2021-01-07 | Hitachi High-Tech Corporation | Ladungsträgerstrahlvorrichtung und Verfahren zum Einstellen der Position eines Detektors einer Ladungsträgerstrahlvorrichtung |
WO2019239546A1 (ja) | 2018-06-14 | 2019-12-19 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡装置 |
JP7174773B2 (ja) * | 2018-11-08 | 2022-11-17 | 株式会社日立ハイテク | 荷電粒子線装置の調整方法及び荷電粒子線装置システム |
WO2021001935A1 (ja) * | 2019-07-02 | 2021-01-07 | 株式会社日立ハイテク | 荷電粒子線装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11317189A (ja) * | 1999-03-19 | 1999-11-16 | Hitachi Ltd | 走査電子顕微鏡 |
JP2003151484A (ja) * | 2001-11-15 | 2003-05-23 | Jeol Ltd | 走査型荷電粒子ビーム装置 |
WO2004061892A1 (ja) * | 2002-12-27 | 2004-07-22 | Advantest Corporation | 試料観察装置、及び試料観察方法 |
JP2007194126A (ja) * | 2006-01-20 | 2007-08-02 | Hitachi High-Technologies Corp | 走査電子顕微鏡 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04302316A (ja) | 1991-03-29 | 1992-10-26 | Omron Corp | メモリ管理装置 |
US6667476B2 (en) | 1998-03-09 | 2003-12-23 | Hitachi, Ltd. | Scanning electron microscope |
JP4093662B2 (ja) * | 1999-01-04 | 2008-06-04 | 株式会社日立製作所 | 走査形電子顕微鏡 |
US6998611B2 (en) | 2001-09-06 | 2006-02-14 | Ebara Corporation | Electron beam apparatus and device manufacturing method using same |
JP2006216396A (ja) * | 2005-02-04 | 2006-08-17 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
JP2006294627A (ja) | 2006-04-27 | 2006-10-26 | Ebara Corp | 電子線装置及び該装置を用いたデバイス製造方法 |
JP5075431B2 (ja) * | 2007-02-28 | 2012-11-21 | 株式会社日立ハイテクノロジーズ | 帯電測定方法、焦点調整方法、及び走査電子顕微鏡 |
US7888640B2 (en) * | 2007-06-18 | 2011-02-15 | Hitachi High-Technologies Corporation | Scanning electron microscope and method of imaging an object by using the scanning electron microscope |
JP5227643B2 (ja) * | 2008-04-14 | 2013-07-03 | 株式会社日立ハイテクノロジーズ | 高分解能でかつ高コントラストな観察が可能な電子線応用装置 |
JP5205515B2 (ja) * | 2009-07-15 | 2013-06-05 | 株式会社日立ハイテクノロジーズ | 試料電位測定方法、及び荷電粒子線装置 |
-
2012
- 2012-06-15 JP JP2012135297A patent/JP5851352B2/ja active Active
-
2013
- 2013-04-12 US US14/407,117 patent/US9324540B2/en active Active
- 2013-04-12 KR KR1020147030888A patent/KR101685274B1/ko active IP Right Grant
- 2013-04-12 WO PCT/JP2013/061010 patent/WO2013187115A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11317189A (ja) * | 1999-03-19 | 1999-11-16 | Hitachi Ltd | 走査電子顕微鏡 |
JP2003151484A (ja) * | 2001-11-15 | 2003-05-23 | Jeol Ltd | 走査型荷電粒子ビーム装置 |
WO2004061892A1 (ja) * | 2002-12-27 | 2004-07-22 | Advantest Corporation | 試料観察装置、及び試料観察方法 |
JP2007194126A (ja) * | 2006-01-20 | 2007-08-02 | Hitachi High-Technologies Corp | 走査電子顕微鏡 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106920723A (zh) * | 2017-03-06 | 2017-07-04 | 聚束科技(北京)有限公司 | 一种扫描聚焦***及电子束控制方法 |
Also Published As
Publication number | Publication date |
---|---|
US9324540B2 (en) | 2016-04-26 |
US20150136979A1 (en) | 2015-05-21 |
JP2014002835A (ja) | 2014-01-09 |
JP5851352B2 (ja) | 2016-02-03 |
KR20140143441A (ko) | 2014-12-16 |
KR101685274B1 (ko) | 2016-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2013187115A1 (ja) | 荷電粒子線装置 | |
JP5164317B2 (ja) | 電子線による検査・計測方法および検査・計測装置 | |
US7521679B2 (en) | Inspection method and inspection system using charged particle beam | |
US11798777B2 (en) | Charged particle beam apparatus, and systems and methods for operating the apparatus | |
JP4795883B2 (ja) | パターン検査・計測装置 | |
JP6242745B2 (ja) | 荷電粒子線装置及び当該装置を用いる検査方法 | |
JP2007265931A (ja) | 検査装置及び検査方法 | |
TW202323776A (zh) | 用於監測束輪廓及功率的方法及設備 | |
JP4253576B2 (ja) | パターン欠陥検査方法及び検査装置 | |
JP2017010608A (ja) | 荷電粒子線の傾斜補正方法および荷電粒子線装置 | |
JP5438937B2 (ja) | 荷電粒子ビーム装置 | |
JP2009170150A (ja) | 検査計測装置および検査計測方法 | |
JP2017084537A (ja) | 電子ビーム検査・測長装置用の電子ビーム径制御方法及び電子ビーム径制御装置、並びに電子ビーム検査・測長装置 | |
JP5548244B2 (ja) | 検査計測装置および検査計測方法 | |
JP6230831B2 (ja) | 荷電粒子線装置および画像取得方法 | |
JP4484860B2 (ja) | パターン欠陥検査方法 | |
KR102625536B1 (ko) | 하전 입자빔 시스템, 및 하전 입자선 장치에 있어서의 관찰 조건을 결정하는 방법 | |
JP5210666B2 (ja) | 走査電子顕微鏡 | |
KR20080090118A (ko) | 반도체 검사 장치의 제어 방법 | |
JP2024521822A (ja) | マルチビーム顕微鏡、および検査部位に応じて調整された設定を用いてマルチビーム顕微鏡を動作させるための方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13804353 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20147030888 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14407117 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13804353 Country of ref document: EP Kind code of ref document: A1 |