WO2013185839A1 - Method for producing an optoelectronic semiconductor device comprising a connecting layer sintered under the action of heat, pressure and ultrasound - Google Patents

Method for producing an optoelectronic semiconductor device comprising a connecting layer sintered under the action of heat, pressure and ultrasound Download PDF

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Publication number
WO2013185839A1
WO2013185839A1 PCT/EP2012/061458 EP2012061458W WO2013185839A1 WO 2013185839 A1 WO2013185839 A1 WO 2013185839A1 EP 2012061458 W EP2012061458 W EP 2012061458W WO 2013185839 A1 WO2013185839 A1 WO 2013185839A1
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WO
WIPO (PCT)
Prior art keywords
component
sintering
sintered material
pressure
optoelectronic semiconductor
Prior art date
Application number
PCT/EP2012/061458
Other languages
German (de)
French (fr)
Inventor
Matthias KNÖRR
Original Assignee
Osram Opto Semiconductors Gmbh
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Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to PCT/EP2012/061458 priority Critical patent/WO2013185839A1/en
Publication of WO2013185839A1 publication Critical patent/WO2013185839A1/en

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Definitions

  • light-emitting diode chips are usually glued to leadframes or other substrates, but due to the properties of the available adhesives, this leads to relatively weak connections and high thermal
  • soldering methods are used for the connection between the chip and a substrate. This reduces the thermal resistance and the strength of the
  • Connection layer increases in comparison to a
  • Adhesive layer Adhesive layer.
  • soldering processes are generally more expensive than bonding processes and the finished LED packages may no longer be installed by reflow soldering because the chip solder would melt again.
  • At least one object of certain embodiments is to specify a method for producing an optoelectronic semiconductor component having at least one first component and one second component.
  • a method for producing an optoelectronic semiconductor component having at least one first component and one second component has a method step in which a sintered material is arranged between the first and the second component.
  • Sintered material can be applied.
  • the second component may be placed on the sintered material and then along with the sintered material on the first component.
  • the sintered material is sintered under the action of heat, pressure and ultrasound during a sintering time to form a bonding layer between the first and second component.
  • the sintered material comprises silver, gold, nickel and / or copper. Especially preferred the sintered material has silver.
  • the sintered material may be in the form of powder grains, particles and / or flakes ranging in size from a few micrometers to a few tens of nanometers.
  • Sintering material for better processability existing organic binders, solvents or other additives are decomposed by the sintering process or from the
  • Sintered material removed whereby no organic matrix remains in the connecting layer produced by the sintering.
  • the particles of the sintered material are sintered to form a porous solid.
  • the connection between the individual particles is very strong and at normal operating temperatures for optoelectronic semiconductor devices below 200 ° C is very far from the melting point of the described sintered materials
  • the melting point of silver is 961 ° C. Therefore occur in the case described here
  • the bonding layer described herein can provide thermal conductivities that are about 10 to 100 times greater than adhesives and 2 to 5 times greater than solders.
  • a sintered material for example, a
  • solvent-containing paste are provided, in which the particles to be sintered are contained.
  • the particles have an organic protective cover.
  • the solvent-containing paste can be printed on the first component and then dried by the action of heat, which can be expelled by drying, for example, solvent from the paste.
  • the sintering of the particles of the sintered material can be any suitable material.
  • LED chip is mounted in a plastic housing, since the plastic for typical such light-emitting diode packages often can only be exposed to a maximum temperature of about 175 ° C.
  • the long sintering time of known sintering processes furthermore ensures low throughput, and the high temperatures and the high pressure can also lead to breakage of, for example, a light-emitting diode chip or a substrate.
  • ultrasonic energy is also supplied during sintering. As a result, an additional burden on the protective layers of the particles can be exercised, so that they are destroyed faster.
  • further energy is made available for running off the sintering processes via the ultrasound. It may therefore be possible that the additional process parameters of temperature, pressure and / or
  • Sintering time can be lowered.
  • the sintering of the sintered material is carried out at a temperature of less than or equal to 250 ° C, preferably at a temperature of less than or equal to 200 ° C and more preferably at a temperature of less than or equal to 175 ° C.
  • the sintering temperature may be, for example, greater than or equal to 25 ° C.
  • the pressure can be supplied, for example, by means of a pressing head on the second component.
  • the pressing head can exert a static pressure on the second component and thus on between the second component and the first component arranged sintered material.
  • the pressure supplied during sintering may be less than or equal to 10 MPa.
  • the pressure is also significantly lower and, for example, up to 0 MPa. For example, this can be here
  • the pressing head can furthermore have a heating element, via which heat can be supplied to the sintering material during the sintering process. Furthermore, it is also possible for the first component to be arranged on a heating plate, via which heat can be supplied to the sintered material.
  • the pressing head can furthermore have an ultrasound generator via which ultrasound waves can be supplied to the sintered material. Furthermore, in addition to a
  • the sintering time can be increased by the additional supply of
  • the first component has a first carrier element.
  • the first carrier element may for example be selected from a lead frame, a plastic carrier, a plastic housing, a
  • Ceramic carrier a circuit board or a combination thereof.
  • the first component or the first carrier element may be a
  • prefabricated plastic housing a so-called pre-mold housing act, in which a lead frame is partially formed with a plastic material.
  • Plastic materials are thermoplastic materials such as silicone or polyphthalamide.
  • the first carrier element may have at least one contact surface over which the second component by means of
  • the first component or the first carrier element preferably has an electrical connection
  • the carrier element may comprise a plastic carrier, ceramic carrier, a printed circuit board or a metal core board with conductor tracks or contact points.
  • the second component is an optoelectronic semiconductor chip.
  • the optoelectronic semiconductor chip can be used as a light-emitting diode chip,
  • Laser diode chip or photodiode chip be executed.
  • the semiconductor chip can be produced as semiconductor layer sequences on the basis of different semiconductor material systems.
  • a semiconductor layer sequence based on In x Ga y Alix x y As for red to yellow radiation, for example, a semiconductor layer sequence based on
  • In x Ga y Al x - y P and short wavelength visible, ie in particular in the range of green to blue light and / or UV radiation for example, a semiconductor layer sequence based on In x Ga y Al x _ y N suitable where 0 ⁇ x ⁇ 1 and 0 ⁇ y ⁇ 1.
  • the semiconductor chip may have a
  • semiconductor layer sequence particularly preferably one epitaxially grown semiconductor layer sequence, comprise or be.
  • the semiconductor layer sequence by means of an epitaxial process, for example
  • MOVPE metal-organic gas phase epitaxy
  • MBE Molecular Beam Epitaxy
  • grown semiconductor layer sequence can be provided a plurality of optoelectronic semiconductor chips.
  • Such semiconductor chips as a substrate
  • Carrier substrate instead of the growth substrate may also be referred to as so-called thin-film semiconductor chips
  • Epitaxial layer sequence is applied or formed a reflective layer that at least a portion of the generated in the epitaxial layer sequence
  • the epitaxial layer sequence reflects electromagnetic radiation back into them; the epitaxial layer sequence has a thickness in the range of 20 microns or less, in particular in the range between 4 and 10 ym; and
  • the epitaxial layer sequence contains at least one
  • Semiconductor layer having at least one surface which has a mixing structure which, in the ideal case, results in an approximately ergodic distribution of the light in the epitaxial epitaxial layer sequence, ie it has a possible ergodisch stochastic
  • the basic principle of a thin-film LED chip is for example in the
  • the electrical contacts of the semiconductor chip can be arranged on different sides of the semiconductor layer sequence or else on the same side.
  • the semiconductor chip may make electrical contact in the form of a sinterable contact surface on one of the
  • Substrate have. On a substrate opposite
  • a further contact surface for example in the form of a so-called bond pads for contacting by means of a
  • Contact surfaces can be mounted and electrically connected.
  • a semiconductor chip can also have two contact surfaces formed as bond pads on the same side of the
  • the second component is an optical component.
  • the second component for example, a lens or a window, which is connected by means of the sintered material with a housing, such as a plastic housing, or a substrate.
  • the second component has a second carrier element which, for example, a
  • Ceramic carrier or a plastic carrier can be.
  • the second component which may have, for example, at least one optoelectronic semiconductor chip on the second carrier element, for example by means of the one described here
  • Method is mounted on the second carrier element, can itself be applied again on a first component, for example, designed as a metal core board or circuit board first carrier element.
  • the first component may have a first carrier element, which is referred to as
  • Printed circuit board or metal core board is formed on the second component as a second carrier element in the form of a ceramic carrier or a plastic carrier by means of
  • an optoelectronic semiconductor chip to be placed In particular, an optoelectronic semiconductor chip to be placed.
  • the further sintered material can be further affected by the action of heat, pressure and ultrasound
  • Bonding layer between the second component and the other component are sintered.
  • the further sintering step and the further sintered material may have features
  • the tempering can be for a few seconds to a few hours, preferably at a
  • the heat treatment step can furthermore be carried out particularly preferably in an oxygen-containing atmosphere, for example air.
  • an additional annealing step the sintering process can be advanced and an improvement in the connection between the already sintered sintered particles can be achieved, so that the porosity of the sintered layer can continue to decrease.
  • the strength and the thermal conductivity of the connection layer itself as well as the strength of the interfaces between the connection layer and adjacent surfaces, ie surfaces of the first and / or the second component may increase.
  • connection layer Reliability of the connection layer can be further increased.
  • the annealing step is carried out in an oven or on a hot plate. It is also possible that a reflow soldering process in which the optoelectronic semiconductor component to a
  • Supporting device such as a circuit board is soldered, serves as an annealing step.
  • the latter is particularly advantageous if a second component
  • High-performance semiconductor chip which generates a high waste heat during operation, which must be derived via the bonding layer on the first component, such as a lead frame and / or a plastic housing.
  • FIGS 1A to 1D are schematic representations of
  • FIGS. 1A to 2D are schematic representations of
  • FIGS. 3A to 3C are schematic representations of
  • a first component 1 is provided, which is shown in FIG. 1A.
  • Plastic housing is designed with a lead frame.
  • a sintered material 3 in the form of a solvent-containing paste is printed on the first component 1 with the aid of a doctor blade 32 through a mask or template 31.
  • it may be in the area where the
  • Sintered material 3 is applied to act an electrical contact area, ie a conductor or a part of a lead frame.
  • a paste with silver particles is applied as the sintering material 3.
  • a paste with silver particles is applied as the sintering material 3.
  • the sintered material 3 is dried, in which applied paste existing solvent can be removed.
  • the first paste existing solvent can be removed.
  • Component 1 with the sintered material 3 is arranged on a heating plate 7.
  • the first component 1 which essentially consists of
  • Metal particles of the sintered material 3 consists.
  • Metal particles can still have an organic protective shell that individually encapsulates each particle.
  • a second component 2 is placed on the dried sintered material 3.
  • the second component 2 is shown in FIG. 1C
  • Embodiment an optoelectronic semiconductor chip such as described above in the general part.
  • the placement of the second component 2 can by means of a
  • Press head 6 done which also serves as a bonding head
  • the bonding machine can be designed.
  • the pressing head may be part of a machine that
  • Chip assembly of so-called flip chips can be used.
  • Such machines are for example from Panasonic
  • a pressure on the sintered material 3 is exerted on the second component 2 via the pressing head 6.
  • the pressing head 6 is preferably provided with a heating element via which heat can be supplied to the sintered material 3 during a sintering step. Additionally or alternatively, the sintered material 3 can also be supplied with heat by means of the heating plate 7. Furthermore, it is also possible to arrange the first and second components 1, 2 with the interposed layer of the sintered material 3 in an oven. Furthermore, the pressing head 6 is preferably with a
  • Ultrasonic transducer equipped so that the pressing head 6 the sintered material 3 during a sintering step
  • Particles can be easily destroyed and the sintering process can begin earlier. Also, during the sintering process, the additional energy provided by ultrasound accelerates the fusion of the sintered particles into a solid layer. The connection between the particles of the
  • Sintering material 3 is closed by sintering the sintered particles to a solid layer by an elevated temperature and by a pressure exerted by the pressing head. Due to the additional introduction of ultrasound, the other parameters pressure, temperature and sintering time in the
  • the typical sintering temperatures may be greater than or equal to 25 ° C and less than or equal to 250 ° C, preferably less than or equal to 200 ° C. and more preferably less than or equal to 175 ° C.
  • a pressure can be described here
  • Ultrasonic coupling lead to cycle times, ie sintering times, from 10 milliseconds up to 60 seconds.
  • the sintering process produces an optoelectronic semiconductor component 10 with the second component 2 on the first component 1, wherein the second component 2 is mounted on the first component 1 by means of the connection layer 30 of the sintered sintered material 3 this is thermally and electrically connected.
  • the bonding layer 30 is compared to adhesive or solder layers significantly more stable and also has a greater thermal conductivity.
  • an optoelectronic semiconductor chip is applied as a second component 2 to a first component 1 designed as a plastic housing or ceramic carrier
  • a lens or a window ie an optical component, for example as the second component 2 one as
  • FIGS. 2A to 2D A further exemplary embodiment for producing an optoelectronic semiconductor component 12 is shown in conjunction with FIGS. 2A to 2D.
  • first exemplary embodiment for producing an optoelectronic semiconductor component 12 is shown in conjunction with FIGS. 2A to 2D.
  • a layer of a sintered material 3 is applied to a first component 1
  • the first component 1 has a first carrier element which can be used as a printed circuit board or
  • Metal core board is formed.
  • a second component 2 is placed, which has a second carrier element 20 in the form of a ceramic carrier, on which optoelectronic
  • Connecting layer 30 is attached to the first component 1.
  • a further sintered material 5 is formed on the second component 2 and a respective optoelectronic semiconductor chip 21 on the further sintered material 5 arranged in regions
  • the further sintering material 5 is formed in each case to form a further connecting layer 50 between the further components and the second component 2, as shown in FIG. 3C.
  • Annealed ultrasound may be performed for a few seconds to several hours, preferably at a temperature of greater than or equal to 100 ° C and less than or equal to 300 ° C.
  • the tempering step can continue
  • connection can be achieved between the already sintered sintered particles, so that the porosity of the sintered layer can continue to decrease.
  • Connection layer can be further increased.
  • the annealing step may be carried out in an oven or on a hot plate. It is also possible that a reflow soldering process in which the optoelectronic semiconductor component to a
  • Supporting device such as a circuit board is soldered, serves as an annealing step.
  • the invention is not limited by the description based on the embodiments of these. Rather, it includes The invention relates to any novel feature as well as any combination of features, which in particular includes any combination of features i the claims, even if this feature or this combination itself is not explicitly in the

Abstract

A method for producing an optoelectronic semiconductor device (10) comprising at least a first component (1) and a second component (2) is specified, wherein a sintering material (3) is applied on the first component (1), the second component (2) is positioned on the sintering material (3), and the sintering material (3) is sintered under the action of heat, pressure and ultrasound during a sintering time to form a connecting layer (30) between the first and second components (1, 2). The first component (1) can be, for example, a leadframe, a plastics carrier, a plastics housing, a ceramic carrier, a printed circuit board or a combination thereof. The second component (2) can be an optoelectronic semiconductor chip (light-emitting diode chip, laser diode chip or photodiode chip) or an optical component (lens, window). Alternatively, the connecting layer (30) can be formed between the first component (1), for example a first carrier element (a metal-core circuit board or a printed circuit board), and a second carrier element (20), wherein the second component (2) on the second carrier element (20) has, for example, at least one optoelectronic semiconductor chip (21) which is fixed by means of the above-described sintering method, for example, on the second carrier element (20) before or after the first carrier element (1) is connected to the second carrier element (20).

Description

Beschreibung  description
VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERBAUELEMENTS MIT EINER UNTER EINWIRKUNG VON WÄRME, DRUCK UND ULTRASCHALL VERSINTERTEN METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT SUBMITTED TO A HEAT, PRESSURE AND ULTRASONICALLY IMPROVED
VERBINDUNGSSCHICHT LINK LAYER
Es wird ein Verfahren zur Herstellung eines There will be a method of making a
optoelektronischen Halbleiterbauelements angegeben.  specified optoelectronic semiconductor device.
Für die Montage von aktiven und passiven elektrisehen, optischen oder optoelektronischen Bauteilen, beispielsweise von Leuchtdiodenchips auf Substraten oder von Keramikträgern auf Platinen, sind Technologien und Materialien zur For the assembly of active and passive electrical, optical or optoelectronic components, for example of light-emitting diode chips on substrates or of ceramic substrates on printed circuit boards, technologies and materials are known for
Herstellung hochstabiler, hochwärmeleitfähiger  Production of highly stable, highly heat-conductive
Verbindungsschichten nötig.  Connection layers necessary.
Typischerweise werden beispielsweise Leuchtdiodenchips auf Leiterrahmen oder andere Träger zumeist geklebt, was aber aufgrund der Eigenschaften der verfügbaren Klebstoffe zu relativ schwachen Verbindungen und hohen thermischen Typically, for example, light-emitting diode chips are usually glued to leadframes or other substrates, but due to the properties of the available adhesives, this leads to relatively weak connections and high thermal
Widerständen führen kann.  Resistances can lead.
Für Hochleistungsleuchtdiodenchips mit hoher Wärmeentwicklung während des Betriebs werden Lötverfahren für die Verbindung zwischen dem Chip und einem Substrat eingesetzt. Damit sinkt der thermische Widerstand und die Festigkeit der For high power, high heat-emitting diode chips during operation, soldering methods are used for the connection between the chip and a substrate. This reduces the thermal resistance and the strength of the
Verbindungsschicht steigt im Vergleich zu einer  Connection layer increases in comparison to a
Klebstoffschicht . Allerdings sind Lötprozesse in der Regel teurer als Klebeprozesse und die fertigen Leuchtdioden- Packages können unter Umständen nicht mehr durch Reflow-Löten verbaut werden, weil die Chiplötung wieder aufschmelzen würde . Gelötete Verbindungen zwischen einem Keramikträger und einer Metallkernplatine hingegen, wobei erstere beispielsweise einen oder mehrere Leuchtdiodenchips tragen kann, genügen gegenwärtig nicht den Zuverlässigkeitsanforderungen. Adhesive layer. However, soldering processes are generally more expensive than bonding processes and the finished LED packages may no longer be installed by reflow soldering because the chip solder would melt again. On the other hand, soldered connections between a ceramic carrier and a metal core board, wherein the former can, for example, carry one or more light-emitting diode chips, currently do not meet the reliability requirements.
Zumindest eine Aufgabe von bestimmten Ausführungsformen ist es, ein Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements mit zumindest einem ersten Bauteil und einem zweiten Bauteil anzugeben. At least one object of certain embodiments is to specify a method for producing an optoelectronic semiconductor component having at least one first component and one second component.
Diese Aufgabe wird durch ein Verfahren gemäß dem unabhängigen Patentanspruch gelöst. Vorteilhafte Ausführungsformen und Weiterbildungen des Gegenstands sind in den abhängigen This object is achieved by a method according to the independent claim. Advantageous embodiments and further developments of the subject are in the dependent
Ansprüchen gekennzeichnet und gehen weiterhin aus der Claims and continue to go from the
nachfolgenden Beschreibung und den Zeichnungen hervor. following description and the drawings.
Gemäß zumindest einer Ausführungsform weist ein Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements mit zumindest einem ersten Bauteil und einem zweiten Bauteil einen Verfahrensschritt auf, bei dem zwischen dem ersten und dem zweiten Bauteil ein Sintermaterial angeordnet wird. In accordance with at least one embodiment, a method for producing an optoelectronic semiconductor component having at least one first component and one second component has a method step in which a sintered material is arranged between the first and the second component.
Beispielsweise können das Sintermaterial auf dem ersten For example, the sintered material on the first
Bauteil und anschließend das zweite Bauteil auf dem Component and then the second component on the
Sintermaterial aufgebracht werden. Alternativ dazu kann das zweite Bauteil auf dem Sintermaterial und anschließend zusammen mit dem Sintermaterial auf dem ersten Bauteil platziert werden. Das Sintermaterial wird unter Einwirkung von Wärme, Druck und Ultraschall während einer Sinterzeit zu einer Verbindungsschicht zwischen dem ersten und zweiten Bauteil versintert. Sintered material can be applied. Alternatively, the second component may be placed on the sintered material and then along with the sintered material on the first component. The sintered material is sintered under the action of heat, pressure and ultrasound during a sintering time to form a bonding layer between the first and second component.
Gemäß einer weiteren Ausführungsform weist das Sintermaterial Silber, Gold, Nickel und/oder Kupfer auf. Besonders bevorzugt weist das Sintermaterial Silber auf. Das Sintermaterial kann in Form von Pulverkörnern, Partikeln und/oder Flocken in einem Größenbereich von einigen Mikrometern bis zu einigen zehn Nanometern vorliegen. According to a further embodiment, the sintered material comprises silver, gold, nickel and / or copper. Especially preferred the sintered material has silver. The sintered material may be in the form of powder grains, particles and / or flakes ranging in size from a few micrometers to a few tens of nanometers.
Durch das Versintern des Sintermaterials wird eine Verbindung zwischen den einzelnen Partikeln des Sintermaterials rein durch ein Verbacken der Partikel in der festen Phase ohne Aufschmelzen des Sintermaterials geschlossen. Im By sintering the sintered material a connection between the individual particles of the sintered material is closed purely by caking of the particles in the solid phase without melting the sintered material. in the
Sintermaterial zur besseren Verarbeitbarkeit vorhandene organische Binder, Lösungsmittel oder andere Zusatzstoffe werden durch den Sinterprozess zersetzt oder aus dem Sintering material for better processability existing organic binders, solvents or other additives are decomposed by the sintering process or from the
Sintermaterial entfernt, wodurch keine organische Matrix in der durch das Versintern hergestellten Verbindungsschicht zurück bleibt. In der fertigen Verbindungsschicht sind die Partikel des Sintermaterials zu einem porösen Festkörper versintert. Die Verbindung zwischen den einzelnen Partikeln ist sehr fest und wird bei normalen Einsatztemperaturen für optoelektronische Halbleiterbauelemente unter 200°C sehr weit vom Schmelzpunkt der beschriebenen Sintermaterialien Sintered material removed, whereby no organic matrix remains in the connecting layer produced by the sintering. In the finished bonding layer, the particles of the sintered material are sintered to form a porous solid. The connection between the individual particles is very strong and at normal operating temperatures for optoelectronic semiconductor devices below 200 ° C is very far from the melting point of the described sintered materials
betrieben. Beispielsweise beträgt der Schmelzpunkt von Silber 961°C. Deshalb treten bei der hier beschriebenen operated. For example, the melting point of silver is 961 ° C. Therefore occur in the case described here
Verbindungsschicht kaum Alterungseffekte auf, was die Connecting layer hardly aging effects on what the
Zuverlässigkeit der Verbindungsschicht zwischen dem ersten und dem zweien Bauteil beispielsweise im Vergleich zu Reliability of the bonding layer between the first and the second component, for example, compared to
Lotwerkstoffen deutlich verbessert. Außerdem können durch die hier beschriebene Verbindungsschicht Wärmeleitfähigkeiten erreicht werden, die etwa 10 bis 100 Mal größer als die von Klebstoffen und 2 bis 5 Mal größer als die von Loten sind.  Lot materials significantly improved. In addition, the bonding layer described herein can provide thermal conductivities that are about 10 to 100 times greater than adhesives and 2 to 5 times greater than solders.
Als Sintermaterial kann beispielsweise eine As a sintered material, for example, a
lösungsmittelhaltige Paste bereitgestellt werden, in der die zu versinternden Partikel enthalten sind. Beispielsweise weisen die Partikel eine organische Schutzhülle auf. Die lösungsmittelhaltige Paste kann auf dem ersten Bauteil aufgedruckt und anschließend durch Wärmeeinwirkung getrocknet werden, wobei durch das Trocknen beispielsweise Lösungsmittel aus der Paste ausgetrieben werden können. solvent-containing paste are provided, in which the particles to be sintered are contained. For example the particles have an organic protective cover. The solvent-containing paste can be printed on the first component and then dried by the action of heat, which can be expelled by drying, for example, solvent from the paste.
Das Versintern der Partikel des Sintermaterials kann The sintering of the particles of the sintered material can
beginnen, sobald die Partikel miteinander direkt in Kontakt treten können, also sobald die organischen Materialien zwischen den einzelnen Partikeln, beispielsweise organische Schutzhüllen um die einzelnen Partikel, die jeden Partikel individuell kapseln, zerstört beziehungsweise entfernt werden und die Partikeloberflächen in Kontakt zueinander treten können. Bei bisher bekannten Sinterprozessen zur Herstellung von Verbindungsschichten von optoelektronischen Bauelementen erfolgt dies durch eine hohe Sintertemperatur und einen hohen Druck, wobei die bekannten Sinterprozesse bis zu mehrere Stunden lang durchgeführt werden müssen. Die Sinterzeit ist insbesondere auch für so genannte drucklose Sinterprozesse sehr groß, die bei Umgebungsdruck durchgeführt werden, da hier nur über die Zuführung von Wärme ein Sintereffekt erreicht wird. Insbesondere hohe Temperaturen und hoher Druck können kritisch bei der Herstellung von optoelektronischen Halbleiterbauelementen sein, beispielsweise wenn ein begin as soon as the particles can come into direct contact with each other, so as soon as the organic materials between the individual particles, such as organic protective shells around the individual particles that individually encapsulate each particle destroyed or removed and the particle surfaces can come into contact. In previously known sintering processes for the production of interconnecting layers of optoelectronic components, this is done by a high sintering temperature and a high pressure, wherein the known sintering processes must be carried out for up to several hours. The sintering time is very high, especially for so-called non-pressurized sintering processes, which are carried out at ambient pressure, since a sintering effect is achieved here only by the supply of heat. In particular, high temperatures and high pressure can be critical in the manufacture of optoelectronic semiconductor devices, for example when a
Leuchtdiodenchip in ein Kunststoffgehäuse montiert wird, da der Kunststoff für typische derartige Leuchtdioden-Packages oft nur einer maximalen Temperatur von etwa 175°C ausgesetzt werden kann. Die lange Sinterzeit bekannter Sinterprozesse sorgt weiterhin für einen geringen Durchsatz und die hohen Temperaturen und der hohe Druck können auch zum Brechen beispielsweise eines Leuchtdiodenchips oder eines Substrats führen . Bei dem hier beschriebenen Verfahren wird zusätzlich zur Zuführung von Wärme und Druck auch Ultraschallenergie während des Versinterns zugeführt. Hierdurch kann eine zusätzliche Belastung auf die Schutzschichten der Partikel ausgeübt werden, so dass diese schneller zerstört werden. Außerdem wird über den Ultraschall weitere Energie zum Ablaufen der Sinterprozesse zur Verfügung gestellt. Es kann daher möglich sein, dass durch den zusätzlichen Einsatz von Ultraschall die anderen Prozessparameter Temperatur, Druck und/oder LED chip is mounted in a plastic housing, since the plastic for typical such light-emitting diode packages often can only be exposed to a maximum temperature of about 175 ° C. The long sintering time of known sintering processes furthermore ensures low throughput, and the high temperatures and the high pressure can also lead to breakage of, for example, a light-emitting diode chip or a substrate. In the method described here, in addition to the supply of heat and pressure, ultrasonic energy is also supplied during sintering. As a result, an additional burden on the protective layers of the particles can be exercised, so that they are destroyed faster. In addition, further energy is made available for running off the sintering processes via the ultrasound. It may therefore be possible that the additional process parameters of temperature, pressure and / or
Sinterzeit abgesenkt werden können. Damit wird beispielsweise auch der Einsatz einer Verbindungsschicht aus einem Sintering time can be lowered. Thus, for example, the use of a compound layer of a
Sintermaterial in einem Kunststoffgehäuse wie etwa in einem so genannten Pre-Mold-Gehäuse möglich, die typischerweise Temperaturen von nur maximal 175°C ausgesetzt werden können. Die Bauteile des optoelektronischen Bauelements werden weiterhin aufgrund des geringeren Drucks geschont und Sintering material in a plastic housing such as in a so-called pre-mold housing possible, which can typically be exposed to temperatures of only 175 ° C maximum. The components of the optoelectronic component are further protected due to the lower pressure and
aufgrund der geringeren Sinterzeit kann ein höherer Due to the lower sintering time can be a higher
Produktionsdurchsatz erreicht werden. Gemäß einer weiteren Ausführungsform erfolgt die Versinterung des Sintermaterials bei einer Temperatur von kleiner oder gleich 250°C, bevorzugt bei einer Temperatur von kleiner oder gleich 200°C und besonders bevorzugt bei einer Temperatur von kleiner oder gleich 175°C. Die Sintertemperatur kann dabei beispielsweise auch größer oder gleich 25°C sein. Production throughput can be achieved. According to a further embodiment, the sintering of the sintered material is carried out at a temperature of less than or equal to 250 ° C, preferably at a temperature of less than or equal to 200 ° C and more preferably at a temperature of less than or equal to 175 ° C. The sintering temperature may be, for example, greater than or equal to 25 ° C.
Während des Versinterns kann der Druck beispielsweise mittels eines Presskopfs auf dem zweiten Bauteil zugeführt werden. Der Presskopf kann dabei einen statischen Druck auf das zweite Bauteil und damit auf zwischen dem zweiten Bauteil und dem ersten Bauteil angeordnete Sintermaterial ausüben. Der Druck, der während des Versinterns zugeführt wird, kann insbesondere kleiner oder gleich 10 MPa sein. Weiterhin kann der Druck auch deutlich niedriger liegen und beispielsweise bis zu 0 MPa betragen. Beispielsweise kann das hier During sintering, the pressure can be supplied, for example, by means of a pressing head on the second component. The pressing head can exert a static pressure on the second component and thus on between the second component and the first component arranged sintered material. In particular, the pressure supplied during sintering may be less than or equal to 10 MPa. Furthermore, can the pressure is also significantly lower and, for example, up to 0 MPa. For example, this can be here
beschriebene Versintern mit Ultraschall auch als druckloser Sinterprozess bei Umgebungsdruck ohne zusätzlich described sintering with ultrasound also as a pressureless sintering process at ambient pressure without additional
Druckeinwirkung durchgeführt werden. Pressure be performed.
Der Presskopf kann weiterhin ein Heizelement aufweisen, über das während des Sinterprozesses dem Sintermaterial Wärme zugeführt werden kann. Weiterhin ist es auch möglich, dass das erste Bauteil auf einer Heizplatte angeordnet wird, über die dem Sintermaterial Wärme zugeführt werden kann. Der Presskopf kann weiterhin einen Ultraschallgeber aufweisen, über den dem Sintermaterial Ultraschallwellen zugeführt werden können. Weiterhin kann auch zusätzlich zu einem The pressing head can furthermore have a heating element, via which heat can be supplied to the sintering material during the sintering process. Furthermore, it is also possible for the first component to be arranged on a heating plate, via which heat can be supplied to the sintered material. The pressing head can furthermore have an ultrasound generator via which ultrasound waves can be supplied to the sintered material. Furthermore, in addition to a
Presskopf ein Ultraschallgeber vorhanden sein. Press head an ultrasonic transducer be present.
Die Sinterzeit kann durch die zusätzliche Zuführung von The sintering time can be increased by the additional supply of
Ultraschallenergie im Bereich von größer oder gleich 10 Millisekunden und kleiner oder gleich 60 Sekunden liegen. Gemäß einer weiteren Ausführungsform weist das erste Bauteil ein erstes Trägerelement auf. Das erste Trägerelement kann beispielsweise ausgewählt sein aus einem Leiterrahmen, einem Kunststoffträger, einem Kunststoffgehäuse, einem Ultrasonic energy in the range of greater than or equal to 10 milliseconds and less than or equal to 60 seconds. According to a further embodiment, the first component has a first carrier element. The first carrier element may for example be selected from a lead frame, a plastic carrier, a plastic housing, a
Keramikträger, einer Leiterplatte oder einer Kombination daraus. Beispielsweise kann es sich beim ersten Bauteil beziehungsweise beim ersten Trägerelement um ein Ceramic carrier, a circuit board or a combination thereof. For example, the first component or the first carrier element may be a
vorgefertigtes Kunststoffgehäuse, ein so genanntes Pre-Mold- Gehäuse, handeln, bei dem ein Leiterrahmen teilweise mit einem Kunststoffmaterial umformt ist. Typische prefabricated plastic housing, a so-called pre-mold housing act, in which a lead frame is partially formed with a plastic material. typical
Kunststoffmaterialien sind dabei thermoplastische Kunststoffe wie beispielsweise Silikon oder Polyphthalamid . Das erste Trägerelement kann zumindest eine Kontaktfläche aufweisen, über die das zweite Bauteil mittels des Plastic materials are thermoplastic materials such as silicone or polyphthalamide. The first carrier element may have at least one contact surface over which the second component by means of
Sintermaterials beziehungsweise der Verbindungsschicht montiert wird. Im Falle, dass durch die Verbindungsschicht aus dem Sintermaterial auch ein elektrischer Anschluss erfolgen soll, weist das erste Bauteil beziehungsweise das erste Trägerelement bevorzugt einen elektrischen Sintered material or the connecting layer is mounted. In the event that an electrical connection is also to take place through the connecting layer of the sintered material, the first component or the first carrier element preferably has an electrical connection
Kontaktbereich auf, auf dem das Sintermaterial und darüber das zweite Bauteil platziert werden. Beispielsweise kann das Trägerelement einen Kunststoffträger , Keramikträger, eine Leiterplatte oder eine Metallkernplatine mit Leiterbahnen oder Kontaktstellen aufweisen. Contact area on which the sintered material and above the second component are placed. For example, the carrier element may comprise a plastic carrier, ceramic carrier, a printed circuit board or a metal core board with conductor tracks or contact points.
Gemäß einer weiteren Ausführungsform ist das zweite Bauteil ein optoelektronischer Halbleiterchip. Insbesondere kann der optoelektronische Halbleiterchip als Leuchtdiodenchip, According to a further embodiment, the second component is an optoelectronic semiconductor chip. In particular, the optoelectronic semiconductor chip can be used as a light-emitting diode chip,
Laserdiodenchip oder Photodiodenchip ausgeführt sein. Laser diode chip or photodiode chip be executed.
Der Halbleiterchip kann je nach abgestrahlter oder zu detektierender Wellenlänge als Halbleiterschichtenfolgen auf der Basis von verschiedenen Halbleitermaterialsystemen hergestellt werden. Für eine langwellige, infrarote bis rote Strahlung ist beispielsweise eine Halbleiterschichtenfolge auf Basis von InxGayAli-x-yAs , für rote bis gelbe Strahlung beispielsweise eine Halbleiterschichtenfolge auf Basis vonDepending on the wavelength emitted or to be detected, the semiconductor chip can be produced as semiconductor layer sequences on the basis of different semiconductor material systems. For a long-wave, infrared to red radiation, for example, a semiconductor layer sequence based on In x Ga y Alix x y As, for red to yellow radiation, for example, a semiconductor layer sequence based on
InxGayAli-x-yP und für kurzwellige sichtbare, also insbesondere im Bereich von grünem bis blauem Licht, und/oder für UV- Strahlung beispielsweise eine Halbleiterschichtenfolge auf Basis von InxGayAli-x_yN geeignet, wobei jeweils 0 < x < 1 und 0 < y < 1 gilt. In x Ga y Al x - y P and short wavelength visible, ie in particular in the range of green to blue light and / or UV radiation, for example, a semiconductor layer sequence based on In x Ga y Al x _ y N suitable where 0 <x <1 and 0 <y <1.
Insbesondere kann der Halbleiterchip eine In particular, the semiconductor chip may have a
Halbleiterschichtenfolge, besonders bevorzugt eine epitaktisch gewachsene Halbleiterschichtenfolge, aufweisen oder daraus sein. Dazu kann die Halbleiterschichtenfolge mittels eines Epitaxieverfahrens, beispielsweise Semiconductor layer sequence, particularly preferably one epitaxially grown semiconductor layer sequence, comprise or be. For this purpose, the semiconductor layer sequence by means of an epitaxial process, for example
metallorgansicher Gasphasenepitaxie (MOVPE) oder metal-organic gas phase epitaxy (MOVPE) or
Molekularstrahlepitaxie (MBE) , auf einem Aufwachssubstrat aufgewachsen und mit elektrischen Kontakten versehen werden. Durch Vereinzelung des Aufwachssubstrats mit der Molecular Beam Epitaxy (MBE), grown on a growth substrate and provided with electrical contacts. By separating the growth substrate with the
aufgewachsenen Halbleiterschichtenfolge kann eine Mehrzahl von optoelektronischen Halbleiterchips bereitgestellt werden. grown semiconductor layer sequence can be provided a plurality of optoelectronic semiconductor chips.
Weiterhin kann die Halbleiterschichtenfolge vor dem Furthermore, the semiconductor layer sequence before the
Vereinzeln auf ein Trägersubstrat übertragen werden und das Aufwachssubstrat kann gedünnt oder ganz entfernt werden. Separate be transferred to a carrier substrate and the growth substrate can be thinned or removed completely.
Derartige Halbleiterchips, die als Substrat ein Such semiconductor chips as a substrate
Trägersubstrat anstelle des Aufwachssubstrats aufweisen, können auch als so genannte Dünnfilm-Halbleiterchips Carrier substrate instead of the growth substrate may also be referred to as so-called thin-film semiconductor chips
bezeichnet werden. be designated.
Ein Dünnfilm-Halbleiterchip zeichnet sich insbesondere durch folgende charakteristische Merkmale aus: A thin-film semiconductor chip is characterized in particular by the following characteristic features:
an einer zu dem Trägersubstrat hin gewandten ersten  on a first side facing the carrier substrate
Hauptfläche einer Strahlungserzeugenden  Main surface of a radiation generator
Epitaxieschichtenfolge ist eine reflektierende Schicht aufgebracht oder ausgebildet, die zumindest einen Teil der in der Epitaxieschichtenfolge erzeugten  Epitaxial layer sequence is applied or formed a reflective layer that at least a portion of the generated in the epitaxial layer sequence
elektromagnetischen Strahlung in diese zurückreflektiert; die Epitaxieschichtenfolge weist eine Dicke im Bereich von 20ym oder weniger, insbesondere im Bereich zwischen 4 ym und 10 ym auf; und  reflects electromagnetic radiation back into them; the epitaxial layer sequence has a thickness in the range of 20 microns or less, in particular in the range between 4 and 10 ym; and
- die Epitaxieschichtenfolge enthält mindestens eine - The epitaxial layer sequence contains at least one
Halbleiterschicht mit zumindest einer Fläche, die eine Durchmischungsstruktur aufweist, die im Idealfall zu einer annähernd ergodischen Verteilung des Lichtes in der epitaktischen Epitaxieschichtenfolge führt, d.h. sie weist ein möglichst ergodisch stochastisches Semiconductor layer having at least one surface which has a mixing structure which, in the ideal case, results in an approximately ergodic distribution of the light in the epitaxial epitaxial layer sequence, ie it has a possible ergodisch stochastic
Streuverhalten auf. Ein Dünnfilm-Halbleiterchip ist in guter Näherung ein  Scattering behavior on. A thin-film semiconductor chip is in good approximation
Lambert ' scher Oberflächenstrahler. Das Grundprinzip eines Dünnschicht-Leuchtdiodenchips ist beispielsweise in der  Lambert's surface radiator. The basic principle of a thin-film LED chip is for example in the
Druckschrift I. Schnitzer et al . , Appl . Phys . Lett. 63 (16), 18. Oktober 1993, 2174 - 2176 beschrieben. Reference I. Schnitzer et al. , Appl. Phys. Lett. 63 (16), 18 October 1993, 2174 - 2176.
Die elektrischen Kontakte des Halbleiterchips können auf verschiedenen Seiten der Halbleiterschichtenfolge oder auch auf derselben Seite angeordnet sein. Beispielsweise kann der Halbleiterchip einen elektrischen Kontakt in Form einer sinterbaren Kontaktfläche auf einer der The electrical contacts of the semiconductor chip can be arranged on different sides of the semiconductor layer sequence or else on the same side. For example, the semiconductor chip may make electrical contact in the form of a sinterable contact surface on one of the
Halbleiterschichtenfolge gegenüber liegenden Seite des  Semiconductor layer sequence opposite side of
Substrats aufweisen. Auf einer dem Substrat gegenüber Substrate have. On a substrate opposite
liegenden Seite der Halbleiterschichtenfolge kann eine weitere Kontaktfläche, beispielsweise in Form eines so genannten Bondpads zur Kontaktierung mittels eines lying side of the semiconductor layer sequence, a further contact surface, for example in the form of a so-called bond pads for contacting by means of a
Bonddrahts, ausgebildet sein. Weiterhin kann der Bonded wire, be trained. Furthermore, the
Halbleiterchip die elektrischen Kontaktflächen auf derselben Seite als sinterbare Kontaktflächen aufweisen und als so genannter Flip-Chip ausgebildet sein, der mit den Semiconductor chip having the electrical contact surfaces on the same side as sinterable contact surfaces and be designed as a so-called flip-chip, with the
Kontaktflächen montierbar und elektrisch anschließbar ist.Contact surfaces can be mounted and electrically connected.
Darüber hinaus kann ein Halbleiterchip auch zwei als Bondpads ausgebildete Kontaktflächen auf derselben Seite der In addition, a semiconductor chip can also have two contact surfaces formed as bond pads on the same side of the
Halbleiterschichtenfolge aufweisen, während die Montageseite ohne elektrische Kontaktflächen ausgebildet ist und über das Sintermaterial nur thermisch angeschlossen wird. Semiconductor layer sequence, while the mounting side is formed without electrical contact surfaces and is connected via the sintered material only thermally.
Gemäß einer weiteren Ausführungsform ist das zweite Bauteil ein optisches Bauteil. Insbesondere kann das zweite Bauteil beispielsweise eine Linse oder ein Fenster sein, das mittels des Sintermaterials mit einem Gehäuse, beispielsweise einem Kunststoffgehäuse, oder einem Substrat verbunden wird. Gemäß einer weiteren Ausführungsform weist das zweite Bauteil ein zweites Trägerelement auf, das beispielsweise ein According to a further embodiment, the second component is an optical component. In particular, the second component for example, a lens or a window, which is connected by means of the sintered material with a housing, such as a plastic housing, or a substrate. According to a further embodiment, the second component has a second carrier element which, for example, a
Keramikträger oder ein Kunststoffträger sein kann. Das zweite Bauteil, das auf dem zweiten Trägerelement beispielsweise zumindest einen optoelektronischen Halbleiterchip aufweisen kann, der beispielsweise mittels des hier beschriebenen Ceramic carrier or a plastic carrier can be. The second component, which may have, for example, at least one optoelectronic semiconductor chip on the second carrier element, for example by means of the one described here
Verfahrens auf dem zweiten Trägerelement befestigt ist, kann selbst wieder auf einem ersten Bauteil, beispielsweise einem als Metallkernplatine oder Leiterplatte ausgeführten ersten Trägerelement aufgebracht werden.  Method is mounted on the second carrier element, can itself be applied again on a first component, for example, designed as a metal core board or circuit board first carrier element.
Gemäß einer weiteren Ausführungsform wird nach dem Herstellen der Verbindungsschicht zwischen dem ersten und dem zweiten Bauteil ein weiteres Sintermaterial auf dem zweiten Bauteil aufgebracht. Beispielsweise kann in diesem Fall das erste Bauteil ein erstes Trägerelement aufweisen, das als According to a further embodiment, after producing the connecting layer between the first and the second component, a further sintering material is applied to the second component. For example, in this case, the first component may have a first carrier element, which is referred to as
Leiterplatte oder Metallkernplatine ausgebildet ist, auf das als zweites Bauteil ein zweites Trägerelement in Form eines Keramikträgers oder eines Kunststoffträgers mittels der  Printed circuit board or metal core board is formed on the second component as a second carrier element in the form of a ceramic carrier or a plastic carrier by means of
Verbindungsschicht aus dem Sintermaterial befestigt und elektrisch angeschlossen ist. Auf dem weiteren Sintermaterial kann weiterhin ein weiteres Bauteil, beispielsweise Connecting layer of the sintered material attached and electrically connected. On the further sintered material can still another component, for example
insbesondere ein optoelektronischer Halbleiterchip, platziert werden. Das weitere Sintermaterial kann durch Einwirkung von Wärme, Druck und Ultraschall zu einer weiteren In particular, an optoelectronic semiconductor chip to be placed. The further sintered material can be further affected by the action of heat, pressure and ultrasound
Verbindungsschicht zwischen dem zweiten Bauteil und dem weiteren Bauteil versintert werden. Der weitere Sinterschritt und das weitere Sintermaterial können dabei Merkmale Bonding layer between the second component and the other component are sintered. The further sintering step and the further sintered material may have features
aufweisen, die oben in Verbindung mit dem Sintermaterial und dem Herstellen der Verbindungsschicht zwischen dem ersten und zweiten Bauteil beschrieben sind. have the above in connection with the sintered material and the production of the connecting layer between the first and second component are described.
Gemäß einer weiteren Ausführungsform wird die unter According to another embodiment, the under
Einwirkung von Wärme, Druck und Ultraschall gesinterte Action of heat, pressure and sintered ultrasound
Verbindungsschicht nach dem Sintervorgang ohne Einwirkung von Druck und Ultraschall getempert. Das Tempern kann für einige Sekunden bis zu einigen Stunden vorzugsweise bei einer  Bonding layer after the sintering process without exposure to pressure and ultrasound annealed. The tempering can be for a few seconds to a few hours, preferably at a
Temperatur von größer oder gleich 100°C und kleiner oder gleich 300 °C durchgeführt werden. Der Temperschritt kann weiterhin besonders bevorzugt in einer sauerstoffhaltigen Atmosphäre, beispielsweise Luft, durchgeführt werden. Durch einen zusätzlichen Temperschritt kann der Sintervorgang vorangetrieben und eine Verbesserung der Verbindung zwischen den bereits versinterten Sinterpartikeln erreicht werden, so dass die Porosität der Sinterschicht weiter abnehmen kann. Dadurch können die Festigkeit und die Wärmeleitfähigkeit der Verbindungsschicht selbst sowie auch die Festigkeit der Grenzflächen zwischen der Verbindungsschicht und angrenzenden Oberflächen, also Oberflächen des ersten und/oder des zweiten Bauteils, zunehmen. Somit kann durch den zusätzlichen Temperature of greater than or equal to 100 ° C and less than or equal to 300 ° C are performed. The heat treatment step can furthermore be carried out particularly preferably in an oxygen-containing atmosphere, for example air. By an additional annealing step, the sintering process can be advanced and an improvement in the connection between the already sintered sintered particles can be achieved, so that the porosity of the sintered layer can continue to decrease. As a result, the strength and the thermal conductivity of the connection layer itself as well as the strength of the interfaces between the connection layer and adjacent surfaces, ie surfaces of the first and / or the second component, may increase. Thus, by the additional
Temperschritt die Festigkeit, Wärmeleitfähigkeit und Tempering the strength, thermal conductivity and
Zuverlässigkeit der Verbindungsschicht weiter erhöht werden. Gemäß einer weiteren Ausführungsform wird der Temperschritt in einem Ofen oder auf einer Heizplatte durchgeführt. Es ist auch möglich, dass ein Reflow-Lötprozess , bei dem das optoelektronische Halbleiterbauelement auf eine Reliability of the connection layer can be further increased. According to another embodiment, the annealing step is carried out in an oven or on a hot plate. It is also possible that a reflow soldering process in which the optoelectronic semiconductor component to a
Trägervorrichtung wie etwa eine Platine gelötet wird, als Temperschritt dient. Supporting device such as a circuit board is soldered, serves as an annealing step.
Mit dem hier beschriebenen Verfahren lässt sich eine With the method described here can be a
hochstabile und hochwärmeleitfähige Verbindungsschicht zwischen dem ersten und dem zweiten Bauteil herstellen. Im Vergleich zu Klebstoffschichten, die bei mechanischer highly stable and highly heat-conductive bonding layer make between the first and the second component. Compared to adhesive layers, which in mechanical
Belastung reißen können, oder Lotschichten, die bei Reflow- Lötprozessen wieder aufschmelzen können, weist die hier beschriebene Verbindungsschicht aus dem Sintermaterial eine deutlich höhere Stabilität und gleichzeitig einen geringeren thermischen Widerstand auf. Letzterer ist insbesondere von Vorteil, wenn als zweites Bauteil ein Stress can crack, or solder layers, which can reflow in reflow soldering processes, has the connection layer described here from the sintered material significantly higher stability and at the same time a lower thermal resistance. The latter is particularly advantageous if a second component
Hochleistungshalbleiterchip verwendet wird, der im Betrieb eine hohe Abwärme erzeugt, die über die Verbindungsschicht auf das erste Bauteil, beispielsweise einen Leiterrahmen und/oder ein Kunststoffgehäuse, abgeleitet werden muss.  High-performance semiconductor chip is used, which generates a high waste heat during operation, which must be derived via the bonding layer on the first component, such as a lead frame and / or a plastic housing.
Weitere Vorteile, vorteilhafte Ausführungsformen und Further advantages, advantageous embodiments and
Weiterbildungen ergeben sich aus den im Folgenden in Further developments emerge from the following in
Verbindung mit den Figuren beschriebenen Compound described with the figures
Ausführungsbeispielen . Exemplary embodiments.
Es zeigen: Show it:
Figuren 1A bis 1D schematische Darstellungen von Figures 1A to 1D are schematic representations of
Verfahrensschritten eines Verfahrens zur Herstellung eines optoelektronischen Halbleiterbauelements gemäß einem Ausführungsbeispiel,  Method steps of a method for producing an optoelectronic semiconductor component according to an exemplary embodiment,
Figuren 2A bis 2D schematische Darstellungen von Figures 2A to 2D are schematic representations of
Verfahrensschritten eines Verfahrens zur Herstellung eines optoelektronischen Halbleiterbauelements gemäß einem weiteren Ausführungsbeispiel und  Method steps of a method for producing an optoelectronic semiconductor component according to a further embodiment and
Figuren 3A bis 3C schematische Darstellungen von Figures 3A to 3C are schematic representations of
Verfahrensschritten eines Verfahrens zur Herstellung eines optoelektronischen Halbleiterbauelements gemäß einem weiteren Ausführungsbeispiel. In den Ausführungsbeispielen und Figuren können gleiche, gleichartige oder gleich wirkende Elemente jeweils mit denselben Bezugszeichen versehen sein. Die dargestellten Elemente und deren Größenverhältnisse untereinander sind nicht als maßstabsgerecht anzusehen, vielmehr können einzelne Elemente, wie zum Beispiel Schichten, Bauteile, Bauelemente und Bereiche, zur besseren Darstellbarkeit und/oder zum besseren Verständnis übertrieben groß dargestellt sein. In Verbindung mit den Figuren 1A bis 1D ist ein Method steps of a method for producing an optoelectronic semiconductor component according to a further exemplary embodiment. In the exemplary embodiments and figures, identical, identical or identically acting elements can each be provided with the same reference numerals. The illustrated elements and their proportions with each other are not to be regarded as true to scale, but individual elements, such as layers, components, components and areas, for better representation and / or better understanding may be exaggerated. In conjunction with Figures 1A to 1D is a
Ausführungsbeispiel für ein Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements 10 gezeigt.  Embodiment of a method for producing an optoelectronic semiconductor device 10 shown.
Hierzu wird in einem ersten Verfahrensschritt gemäß Figur 1A ein erstes Bauteil 1 bereit gestellt, das im gezeigten For this purpose, in a first method step according to FIG. 1A, a first component 1 is provided, which is shown in FIG
Ausführungsbeispiel als Keramikträger oder als Embodiment as a ceramic carrier or as
Kunststoffgehäuse mit einem Leiterrahmen ausgeführt ist. Auf das erste Bauteil 1 wird ein Sintermaterial 3 in Form einer lösungsmittelhaltigen Paste mit Hilfe einer Rakel 32 durch eine Maske beziehungsweise Schablone 31 aufgedruckt. Plastic housing is designed with a lead frame. A sintered material 3 in the form of a solvent-containing paste is printed on the first component 1 with the aid of a doctor blade 32 through a mask or template 31.
Insbesondere kann es sich bei dem Bereich, in dem das In particular, it may be in the area where the
Sintermaterial 3 aufgebracht wird, um einen elektrischen Kontaktbereich, also eine Leiterbahn oder einen Teil eines Leiterrahmens handeln. Sintered material 3 is applied to act an electrical contact area, ie a conductor or a part of a lead frame.
Im gezeigten Ausführungsbeispiel wird als Sintermaterial 3 eine Paste mit Silberpartikeln aufgebracht. Alternativ dazu ist es auch möglich, ein anderes sinterbares Metall, In the exemplary embodiment shown, a paste with silver particles is applied as the sintering material 3. Alternatively, it is also possible to use another sinterable metal,
beispielsweise Gold, Kupfer, Nickel oder Mischungen aus den genannten Metallen aufzubringen. For example, gold, copper, nickel or mixtures of the metals mentioned apply.
In einem weiteren Verfahrensschritt gemäß Figur 1B erfolgt eine Trocknung des Sintermaterials 3, bei dem in der aufgebrachten Paste vorhandene Lösungsmittel entfernt werden. Hierzu wird im gezeigten Ausführungsbeispiel das erste In a further method step according to FIG. 1B, the sintered material 3 is dried, in which applied paste existing solvent can be removed. For this purpose, in the embodiment shown, the first
Bauteil 1 mit dem Sintermaterial 3 auf einer Heizplatte 7 angeordnet. Alternativ dazu ist es auch möglich, das erste Bauteil 1 mit der Schicht aus dem Sintermaterial 3 Component 1 with the sintered material 3 is arranged on a heating plate 7. Alternatively, it is also possible, the first component 1 with the layer of the sintered material. 3
beispielsweise in einem Ofen anzuordnen. Nach dem Trocknen bleibt eine getrocknete Schicht aus dem Sintermaterial 3 auf dem ersten Bauteil 1 zurück, die im Wesentlichen aus for example, to arrange in a furnace. After drying, a dried layer of the sintered material 3 remains on the first component 1, which essentially consists of
Metallpartikeln des Sintermaterials 3 besteht. Die Metal particles of the sintered material 3 consists. The
Metallpartikel können dabei noch eine organische Schutzhülle aufweisen, die jeden Partikel individuell kapselt. Metal particles can still have an organic protective shell that individually encapsulates each particle.
In einem weiteren Verfahrensschritt gemäß Figur IC wird auf das getrocknete Sintermaterial 3 ein zweites Bauteil 2 platziert. Das zweite Bauteil 2 ist im gezeigten In a further method step according to FIG. 1C, a second component 2 is placed on the dried sintered material 3. The second component 2 is shown in FIG
Ausführungsbeispiel ein optoelektronischer Halbleiterchip wie beispielsweise oben im allgemeinen Teil beschrieben ist. Das Platzieren des zweiten Bauteils 2 kann mittels eines  Embodiment an optoelectronic semiconductor chip such as described above in the general part. The placement of the second component 2 can by means of a
Presskopfes 6 erfolgen, der auch als Bondkopf einer Press head 6 done, which also serves as a bonding head
Die-Bonding-Maschine ausgeführt sein kann. Beispielsweise kann der Presskopf Teil einer Maschine sein, die The bonding machine can be designed. For example, the pressing head may be part of a machine that
beispielsweise auch zur Fabrikation von for example, for the production of
Ultraschallschweißverbindungen aus Gold-Kontaktpunkten (so genannte „gold bumps" oder Gold-Gold-Verbindungen) zur  Ultrasonic welding joints made of gold contact points (so-called "gold bumps" or gold-gold compounds)
Chipmontage von so genannten Flipchips eingesetzt werden. Derartige Maschinen werden beispielsweise von Panasonic Chip assembly of so-called flip chips can be used. Such machines are for example from Panasonic
Factory Solutions, Datacon oder TDK hergestellt. Factory Solutions, Datacon or TDK manufactured.
In einem anschließenden Sinterschritt wird über den Presskopf 6 auf dem zweiten Bauteil 2 ein Druck auf das Sintermaterial 3 ausgeübt. Der Presskopf 6 ist vorzugsweise mit einem Heizelement ausgestattet, über das während eines Sinterschrittes dem Sintermaterial 3 Wärme zugeführt werden kann. Zusätzlich oder alternativ dazu kann dem Sintermaterial 3 auch mittels der Heizplatte 7 Wärme zugeführt werden. Weiterhin ist es auch möglich, das erste und zweite Bauteil 1, 2 mit der dazwischen angeordneten Schicht aus dem Sintermaterial 3 in einem Ofen anzuordnen . Weiterhin ist der Presskopf 6 vorzugsweise mit einem In a subsequent sintering step, a pressure on the sintered material 3 is exerted on the second component 2 via the pressing head 6. The pressing head 6 is preferably provided with a heating element via which heat can be supplied to the sintered material 3 during a sintering step. Additionally or alternatively, the sintered material 3 can also be supplied with heat by means of the heating plate 7. Furthermore, it is also possible to arrange the first and second components 1, 2 with the interposed layer of the sintered material 3 in an oven. Furthermore, the pressing head 6 is preferably with a
Ultraschallgeber ausgestattet, so dass der Presskopf 6 dem Sintermaterial 3 während eines Sinterschritts  Ultrasonic transducer equipped so that the pressing head 6 the sintered material 3 during a sintering step
Ultraschallenergie zuführen kann. Durch den Ultraschall können die Sinterpartikel zusätzlich aneinander reiben, wodurch eine passivierende organische Beschichtung auf denCan supply ultrasonic energy. Due to the ultrasound, the sintered particles can additionally rub against each other, whereby a passivating organic coating on the
Partikeln leichter zerstört werden kann und der Sintervorgang früher einsetzen kann. Auch während des Sintervorgangs beschleunigt die durch Ultraschall zusätzlich zur Verfügung gestellte Energie das Fusionieren der Sinterpartikel zu einer festen Schicht. Die Verbindung zwischen den Partikeln desParticles can be easily destroyed and the sintering process can begin earlier. Also, during the sintering process, the additional energy provided by ultrasound accelerates the fusion of the sintered particles into a solid layer. The connection between the particles of the
Sintermaterials 3 wird geschlossen, indem die Sinterpartikel durch eine erhöhte Temperatur und durch einen vom Presskopf ausgeübten Druck zu einer massiven Schicht versintern. Durch das zusätzliche Einbringen von Ultraschall können somit die anderen Parameter Druck, Temperatur sowie Sinterzeit im Sintering material 3 is closed by sintering the sintered particles to a solid layer by an elevated temperature and by a pressure exerted by the pressing head. Due to the additional introduction of ultrasound, the other parameters pressure, temperature and sintering time in the
Vergleich zu Ultraschall-losen Prozessen verringert werden, so dass der Prozess schonender im Hinblick auf die Parameter Druck und Temperatur als auch wirtschaftlicher im Hinblick auf die Parameter Temperatur und Zeit wird.  Compared to ultrasound-free processes can be reduced, making the process more gentle in terms of pressure and temperature parameters as well as more economical in terms of temperature and time parameters.
Während bei Ultraschall-losen druckbehafteten Sinterprozessen typische Sinterzeiten einige 10 Sekunden bis zu einigen While in ultrasonic-free pressurized sintering sintering typical times a few tens of seconds to some
Minuten betragen und die angewandten Temperaturen in der Regel im Bereich von 250°C und der eingebrachte Druck bis zu 50 MPa betragen kann, können durch das zusätzliche Einbringen von Ultraschall die typischen Sintertemperaturen größer oder gleich 25°C und kleiner oder gleich 250°C sein, bevorzugt kleiner oder gleich 200°C und besonders bevorzugt kleiner gleich 175°C. Als Druck kann beim hier beschriebenen Minutes and the temperatures used in the Usually in the range of 250 ° C and the introduced pressure can be up to 50 MPa, by the additional introduction of ultrasound, the typical sintering temperatures may be greater than or equal to 25 ° C and less than or equal to 250 ° C, preferably less than or equal to 200 ° C. and more preferably less than or equal to 175 ° C. As a pressure can be described here
Verfahren ein Druck zwischen 0 MPa bis zu 10 MPa zusammen mit den genannten Sintertemperaturen und der Procedure a pressure between 0 MPa up to 10 MPa together with the mentioned sintering temperatures and the
Ultraschalleinkopplung zu Zykluszeiten, also Sinterzeiten, von 10 Millisekunden bis zu 60 Sekunden führen.  Ultrasonic coupling lead to cycle times, ie sintering times, from 10 milliseconds up to 60 seconds.
Im Vergleich hierzu werden bei herkömmlichen drucklosen In comparison, in conventional pressure-less
Sinterprozessen, bei denen beispielsweise eine Sinterpaste durch Stempeln oder Dispensen auf ein Substrat aufgebracht werden kann und ein Halbleiterchip ohne Vortrocknen durch einen nicht beheizbaren Bondkopf direkt auf die nasse Paste gesetzt werden kann, so dass ein Trocken- und Sinterschritt in einem fließenden Übergang auf einer Heizplatte oder in einem Ofen erfolgen, die Sinterzeit bis zu eine Stunde bei einer Sintertemperatur von 200°C bis 250°C betragen. Da im Sintermaterial vorhandene Lösungsmittel in der Trockenphase unter dem Halbleiterchip hervorkommen müssen, ist dieses herkömmliche Verfahren weiterhin auch nur für kleine Sintering processes in which, for example, a sintering paste can be applied by stamping or dispensing on a substrate and a semiconductor chip can be placed directly on the wet paste without predrying by a non-heatable bonding head, so that a drying and sintering step in a smooth transition on a hot plate or in an oven that has a sintering time of up to one hour at a sintering temperature of 200 ° C to 250 ° C. Since existing in the sintering material solvents must come out in the dry phase under the semiconductor chip, this conventional method is still only for small
Verbindungsflächen anwendbar. Connecting surfaces applicable.
Durch den Sinterprozess wird, wie in Figur 1D gezeigt ist, ein optoelektronisches Halbleiterbauelement 10 mit dem zweiten Bauteil 2 auf dem ersten Bauteil 1 hergestellt, wobei das zweite Bauteil 2 vermittels der Verbindungsschicht 30 aus dem versinterten Sintermaterial 3 auf dem ersten Bauteil 1 montiert und an dieses thermisch und elektrisch angeschlossen ist. Die Verbindungsschicht 30 ist im Vergleich zu Klebstoff- oder Lotschichten deutlich stabiler und weist weiterhin eine größere Wärmeleitfähigkeit auf. As shown in FIG. 1D, the sintering process produces an optoelectronic semiconductor component 10 with the second component 2 on the first component 1, wherein the second component 2 is mounted on the first component 1 by means of the connection layer 30 of the sintered sintered material 3 this is thermally and electrically connected. The bonding layer 30 is compared to adhesive or solder layers significantly more stable and also has a greater thermal conductivity.
Alternativ zum gezeigten Ausführungsbeispiel, in dem ein optoelektronischer Halbleiterchip als zweites Bauteil 2 auf ein als Kunststoffgehäuse oder Keramikträger ausgebildetes erstes Bauteil 1 aufgebracht wird, ist es auch möglich, als zweites Bauteil 2 beispielsweise eine Linse oder ein Fenster, also ein optisches Bauteil, beispielsweise auf ein als As an alternative to the exemplary embodiment shown, in which an optoelectronic semiconductor chip is applied as a second component 2 to a first component 1 designed as a plastic housing or ceramic carrier, it is also possible to use, for example, a lens or a window, ie an optical component, for example as the second component 2 one as
Gehäuse oder ein anderes Substrat ausgeführtes erstes Bauteil 1 aufzubringen und an diesem zu befestigen. Apply housing or another substrate executed first component 1 and to attach to this.
In Verbindung mit den Figuren 2A bis 2D ist ein weiteres Ausführungsbeispiel zur Herstellung eines optoelektronischen Halbleiterbauelements 12 gezeigt. In ersten A further exemplary embodiment for producing an optoelectronic semiconductor component 12 is shown in conjunction with FIGS. 2A to 2D. In first
Verfahrensschritten gemäß der Figuren 2A und 2B wird wie in Verbindung mit den Figuren 1A und 1B beschrieben eine Schicht aus einem Sintermaterial 3 auf ein erstes Bauteil 1  Method steps according to FIGS. 2A and 2B, as described in conjunction with FIGS. 1A and 1B, a layer of a sintered material 3 is applied to a first component 1
aufgedruckt und getrocknet. printed and dried.
Das erste Bauteil 1 weist im gezeigten Ausführungsbeispiel ein erstes Trägerelement auf, das als Leiterplatte oder In the exemplary embodiment shown, the first component 1 has a first carrier element which can be used as a printed circuit board or
Metallkernplatine ausgebildet ist. Auf dieses wird in einem weiteren Verfahrensschritt gemäß Figur 2C ein zweites Bauteil 2 platziert, das ein zweites Trägerelement 20 in Form eines Keramikträgers aufweist, auf dem optoelektronische Metal core board is formed. In this case, in a further method step according to FIG. 2C, a second component 2 is placed, which has a second carrier element 20 in the form of a ceramic carrier, on which optoelectronic
Halbleiterchips 21 bereits vormontiert sind. Ein Versintern der Schicht aus dem Sintermaterial 3 und damit die Semiconductor chips 21 are already pre-assembled. Sintering the layer of the sintered material 3 and thus the
Befestigung des zweiten Bauteils 2 am erste Bauteil 1 erfolgt wie in Verbindung mit den vorherigen Ausführungsbeispielen beschrieben. Zum Schutz der bereits vormontierten Attachment of the second component 2 on the first component 1 takes place as described in connection with the previous exemplary embodiments. To protect the already pre-assembled
optoelektronischen Halbleiterchips 21 auf dem zweiten Trägerelement 20 weist der verwendete Presskopf 6 dabei entsprechende Aussparungen auf. optoelectronic semiconductor chip 21 on the second Carrier element 20, the press head 6 used in this case corresponding recesses.
In Figur 2D ist das fertige optoelektronische In Figure 2D, the finished optoelectronic
Halbleiterbauelement 12 direkt nach dem Versintern gezeigt, bei dem das zweite Bauteil über die versinterte Semiconductor device 12 shown immediately after sintering, in which the second component via the sintered
Verbindungsschicht 30 am ersten Bauteil 1 befestigt ist. Connecting layer 30 is attached to the first component 1.
In Verbindung mit den Figuren 3A bis 3C ist ein weiteres Verfahren zur Herstellung eines optoelektronischen In connection with FIGS. 3A to 3C, a further method for producing an optoelectronic is shown
Halbleiterbauelements 13 gemäß einem weiteren Semiconductor device 13 according to another
Ausführungsbeispiel gezeigt, bei dem gemäß der in den Embodiment shown in which according to the in the
vorherigen Ausführungsbeispielen beschriebenen Verfahren ein zweites Bauteil 2, das hier nun nur ein zweites Trägerelement 20 aus einem Keramikträger aufweist, mittels einer Previous embodiments described a second component 2, which now has only a second support member 20 made of a ceramic carrier, by means of a
Verbindungsschicht 30 aus einem versinterten Sintermaterial 3 auf einem ersten Trägerelement eines ersten Bauteils 1, das als Metallkernplatine ausgebildet ist, befestigt wird. In einem weiteren Verfahrensschritt gemäß Figur 3B wird auf dem zweiten Bauteil 2 ein weiteres Sintermaterial 5 und auf dem bereichsweise angeordneten weiteren Sintermaterial 5 jeweils ein als optoelektronischer Halbleiterchip 21  Connecting layer 30 of a sintered sintered material 3 on a first support member of a first component 1, which is designed as a metal core board, is attached. In a further method step according to FIG. 3B, a further sintered material 5 is formed on the second component 2 and a respective optoelectronic semiconductor chip 21 on the further sintered material 5 arranged in regions
ausgebildetes weiteres Bauteil aufgebracht. Mittels eines entsprechenden Presskopfes 6 und den vorab beschriebenen Sinterprozessparametern wird das weitere Sintermaterial 5 jeweils zu einer weiteren Verbindungsschicht 50 zwischen den weiteren Bauteilen und dem zweiten Bauteil 2 ausgebildet, wie in Figur 3C gezeigt ist. trained further component applied. By means of a corresponding pressing head 6 and the sintering process parameters described above, the further sintering material 5 is formed in each case to form a further connecting layer 50 between the further components and the second component 2, as shown in FIG. 3C.
Die in den Ausführungsbeispielen gezeigten Verfahren und deren Merkmale sind zusätzlich auch miteinander und mit Merkmalen und Ausführungsformen aus dem allgemeinen Teil kombinierbar . The methods shown in the embodiments and their features are in addition to each other and with Features and embodiments of the general part combined.
Weiterhin kann bei den Verfahren gemäß der beschriebenen Ausführungsbeispiele die jeweilige unter Einwirkung von Furthermore, in the method according to the described embodiments, the respective under the action of
Wärme, Druck und Ultraschall gesinterte Verbindungsschicht nach dem Sintervorgang ohne Einwirkung von Druck und  Heat, pressure and ultrasound sintered bonding layer after the sintering process without the effect of pressure and
Ultraschall getempert. Das Tempern kann für einige Sekunden bis zu einigen Stunden vorzugsweise bei einer Temperatur von größer oder gleich 100°C und kleiner oder gleich 300°C durchgeführt werden. Der Temperschritt kann weiterhin Annealed ultrasound. Annealing may be performed for a few seconds to several hours, preferably at a temperature of greater than or equal to 100 ° C and less than or equal to 300 ° C. The tempering step can continue
besonders bevorzugt in einer sauerstoffhaltigen Atmosphäre, beispielsweise Luft, durchgeführt werden. Durch einen particularly preferably be carried out in an oxygen-containing atmosphere, for example air. Through a
zusätzlichen Temperschritt kann der Sintervorgang additional annealing step, the sintering process
vorangetrieben werden und damit eine Verbesserung der be driven forward and thus improve the
Verbindung zwischen den bereits versinterten Sinterpartikeln erreicht werden, so dass die Porosität der Sinterschicht weiter abnehmen kann. Dadurch kann die Festigkeit und die Wärmeleitfähigkeit der Verbindungsschicht selbst sowie auch die Festigkeit der Grenzflächen zwischen der  Connection can be achieved between the already sintered sintered particles, so that the porosity of the sintered layer can continue to decrease. As a result, the strength and the thermal conductivity of the bonding layer itself as well as the strength of the interfaces between the
Verbindungsschicht und angrenzenden Oberflächen, also  Connecting layer and adjacent surfaces, ie
Oberflächen des jeweiligen ersten und/oder zweiten Bauteils, zunehmen. Somit kann durch den zusätzlichen Temperschritt die Festigkeit, Wärmeleitfähigkeit und Zuverlässigkeit der Surfaces of the respective first and / or second component, increase. Thus, by the additional annealing step, the strength, thermal conductivity and reliability of
Verbindungsschicht weiter erhöht werden. Der Temperschritt kann in einem Ofen oder auf einer Heizplatte durchgeführt werden. Es ist auch möglich, dass ein Reflow-Lötprozess , bei dem das optoelektronische Halbleiterbauelement auf eine Connection layer can be further increased. The annealing step may be carried out in an oven or on a hot plate. It is also possible that a reflow soldering process in which the optoelectronic semiconductor component to a
Trägervorrichtung wie etwa eine Platine gelötet wird, als Temperschritt dient. Supporting device such as a circuit board is soldered, serves as an annealing step.
Die Erfindung ist nicht durch die Beschreibung anhand der Ausführungsbeispiele auf diese beschränkt. Vielmehr umfasst die Erfindung jedes neue Merkmal sowie jede Kombination von Merkmalen, was insbesondere jede Kombination von Merkmalen i den Patentansprüchen beinhaltet, auch wenn dieses Merkmal oder diese Kombination selbst nicht explizit in den The invention is not limited by the description based on the embodiments of these. Rather, it includes The invention relates to any novel feature as well as any combination of features, which in particular includes any combination of features i the claims, even if this feature or this combination itself is not explicitly in the
Patentansprüchen oder Ausführungsbeispielen angegeben ist. Claims or embodiments is given.

Claims

Verfahren zur Herstellung eines optoelektronischen Process for producing an optoelectronic
Halbleiterbauelements mit zumindest einem ersten Bauteil (1) und einem zweiten Bauteil (2), bei dem Semiconductor device having at least a first component (1) and a second component (2), in which
auf dem ersten Bauteil (1) ein Sintermaterial (3) aufgebracht wird, on the first component (1) a sintered material (3) is applied,
das zweite Bauteil (2) auf dem Sintermaterial (3) platziert wird und the second component (2) is placed on the sintered material (3) and
das Sintermaterial (3) unter Einwirkung von Wärme, Druck und Ultraschall während einer Sinterzeit zu einer the sintered material (3) under the action of heat, pressure and ultrasound during a sintering time to a
Verbindungsschicht (30) zwischen dem ersten und zweiten Bauteil (1, 2) versintert wird. Connecting layer (30) between the first and second component (1, 2) is sintered.
Verfahren nach Anspruch 1, bei dem das Sintermaterial (3) Silber, Gold, Nickel und/oder Kupfer aufweist. The method of claim 1, wherein the sintered material (3) comprises silver, gold, nickel and / or copper.
Verfahren nach Anspruch 1 oder 2, bei dem das The method of claim 1 or 2, wherein the
Sintermaterial (3) Sinterpartikel umhüllt von einer organischen Hülle aufweist. Sintered material (3) comprises sintered particles enveloped by an organic shell.
Verfahren nach einem der Ansprüche 1 bis 3, bei dem das Sintermaterial (3) als lösungsmittelhaltige Paste auf dem ersten Bauteil (1) aufgedruckt und anschließend durch Wärmeeinwirkung getrocknet wird. Method according to one of claims 1 to 3, wherein the sintered material (3) is printed as a solvent-containing paste on the first component (1) and then dried by the action of heat.
Verfahren nach einem der vorherigen Ansprüche, bei dem die Versinterung bei einer Sintertemperatur von größer oder gleich 25°C und kleiner oder gleich 250°C und bei einem Druck von kleiner oder gleich 10 MPa während einer Sinterzeit von größer oder gleich 10 ms und kleiner oder gleich 60 s durchgeführt wird. Method according to one of the preceding claims, wherein the sintering at a sintering temperature of greater than or equal to 25 ° C and less than or equal to 250 ° C and at a pressure of less than or equal to 10 MPa during a sintering time of greater than or equal to 10 ms and less or equal to 60 s is performed.
6. Verfahren nach einem der vorherigen Ansprüche, bei dem die Verbindungsschicht (30) nach dem Versintern unter Einwirkung von Wärme, Druck und Ultraschall ohne 6. The method according to any one of the preceding claims, wherein the connecting layer (30) after sintering under the action of heat, pressure and ultrasound without
Einwirkung von Druck und Ultraschall getempert wird.  Exposure to pressure and ultrasound is tempered.
7. Verfahren nach Anspruch 6, bei dem in einer 7. The method according to claim 6, wherein in a
sauerstoffhaltigen Atmosphäre getempert wird.  oxygen-containing atmosphere is tempered.
8. Verfahren nach einem der vorherigen Ansprüche, bei dem das erste Bauteil (1) ein erstes Trägerelement aufweist, das ausgewählt ist aus einem Leiterrahmen, einem 8. The method according to any one of the preceding claims, wherein the first component (1) comprises a first support member which is selected from a lead frame, a
Kunststoffträger, einem Kunststoffgehäuse, einem  Plastic carrier, a plastic housing, a
Keramikträger, einer Leiterplatte, einer  Ceramic carrier, a printed circuit board, one
Metallkernplatine oder eine Kombination daraus.  Metal core board or a combination thereof.
9. Verfahren nach einem der vorherigen Ansprüche, bei dem das zweite Bauteil (2) ein optoelektronischer 9. The method according to any one of the preceding claims, wherein the second component (2) an optoelectronic
Halbleiterchip oder ein optisches Bauteil ist. 10. Verfahren nach einem der Ansprüche 1 bis 8, bei dem das zweite Bauteil (2) ein zweites Trägerelement (20) aufweist, das ausgewählt ist aus einem Keramikträger und einem Kunststoffträger . 11. Verfahren nach Anspruch 10, bei dem das zweite Bauteil (2) zumindest einen auf dem zweiten Trägerelement (20) angeordneten optoelektronischen Halbleiterchip (21) aufweist . 12. Verfahren nach Anspruch 10, bei dem  Semiconductor chip or an optical component is. 10. The method according to any one of claims 1 to 8, wherein the second component (2) comprises a second carrier element (20) which is selected from a ceramic carrier and a plastic carrier. 11. The method according to claim 10, wherein the second component (2) has at least one optoelectronic semiconductor chip (21) arranged on the second carrier element (20). 12. The method of claim 10, wherein
- nach dem Herstellen der Verbindungsschicht (3) zwischen dem ersten und dem zweiten Bauteil (1, 2) ein weiteres Sintermaterial (5) auf dem zweiten Bauteil (2) - After the production of the connecting layer (3) between the first and the second component (1, 2) another Sintering material (5) on the second component (2)
aufgebracht wird,  is applied,
- ein optoelektronischer Halbleiterchip (21) auf dem  an optoelectronic semiconductor chip (21) on the
weiteren Sintermaterial (5) platziert wird und  further sintered material (5) is placed and
- das weitere Sintermaterial (5) durch Einwirkung von  - The further sintered material (5) by the action of
Wärme, Druck und Ultraschall zu einer weiteren  Heat, pressure and ultrasound to another
Verbindungsschicht (50) zwischen dem zweiten Bauteil (2) und dem optoelektronischen Halbleiterchip (21)  Connection layer (50) between the second component (2) and the optoelectronic semiconductor chip (21)
versintert wird.  is sintered.
13. Verfahren nach einem der vorherigen Ansprüche, bei dem der Druck während des Versinterns mittels eines Presskopfes (6) auf dem zweiten Bauteil (2) zugeführt wird. 13. The method according to any one of the preceding claims, wherein the pressure during Versinterns by means of a pressing head (6) on the second component (2) is supplied.
.Verfahren nach Anspruch 13, bei dem der Presskopf .Method according to claim 13, wherein the pressing head
einen Ultraschallgeber und/oder ein Heizelement  an ultrasonic generator and / or a heating element
aufweist .  having .
PCT/EP2012/061458 2012-06-15 2012-06-15 Method for producing an optoelectronic semiconductor device comprising a connecting layer sintered under the action of heat, pressure and ultrasound WO2013185839A1 (en)

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