WO2013185526A1 - Radio frequency device and preparation method thereof - Google Patents

Radio frequency device and preparation method thereof Download PDF

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Publication number
WO2013185526A1
WO2013185526A1 PCT/CN2013/075969 CN2013075969W WO2013185526A1 WO 2013185526 A1 WO2013185526 A1 WO 2013185526A1 CN 2013075969 W CN2013075969 W CN 2013075969W WO 2013185526 A1 WO2013185526 A1 WO 2013185526A1
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nitride
layer
radio frequency
frequency device
silicon
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PCT/CN2013/075969
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French (fr)
Chinese (zh)
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程凯
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苏州能讯高能半导体有限公司
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Publication of WO2013185526A1 publication Critical patent/WO2013185526A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Definitions

  • the invention belongs to the field of microelectronic technology, and in particular relates to a radio frequency device and a manufacturing method thereof.
  • GaN wide bandgap semiconductor material GaN is more suitable for high temperature, high frequency and high voltage than silicon and gallium arsenide because of its large forbidden band width, high electron saturation drift speed, high breakdown field strength and good thermal conductivity. And high power devices. GaN electronic devices have a good application prospect in high-frequency and high-power devices. Since the 1990s, the development of GaN-based RF devices has been one of the hotspots of GaN electronic devices.
  • the current gain cutoff frequency and the maximum oscillation frequency are two important performance indicators of the RF device.
  • the quality of these two indicators depends mainly on the gate length, the gate-to-channel control capability, and the source and drain contact resistance.
  • the gate-to-channel control capability (transconductance) is largely determined by the ratio of (gate length) I (the distance between the gate and the channel).
  • an aluminum nitride/gallium nitride heterojunction in a heterojunction structure is a good choice. Due to the strong spontaneous polarization electric field in aluminum nitride, there is a huge piezoelectric effect between aluminum nitride and gallium nitride, so there is a very high concentration of two-dimensional in the aluminum nitride/gallium nitride heterojunction.
  • Electron gas the theoretically predicted value can reach 5E13/cm 2 .
  • a few nanometers of aluminum nitride layer can provide a high concentration of two-dimensional electron gas, and the distance between the gate and the channel can be minimized.
  • Aluminum nitride/GaN heterojunctions are a good choice for improving the RF characteristics of gallium nitride based high electron mobility transistors.
  • the aluminum nitride since the aluminum nitride has a wide band width exceeding 6 electron volts, it has a high Schottky barrier height between the metal and the semiconductor, and greatly improves the contact resistance between the source and the drain. This in turn reduces the RF performance of the device.
  • gallium nitride layer is externally introduced, and the thickness of the gallium nitride layer is usually in the range of 3 to 5 nanometers, which increases the distance from the gate to the two-dimensional electron gas, and reduces the gate-to-channel control ability. This reduces the RF performance of the device.
  • the Schottky contact of the gate introduces a large gate leakage current.
  • a fluorine treatment method is used to treat the nitride surface with CF4 to form a fluoride before the gate metal is deposited to reduce the leakage current of the gate.
  • CF4 treatment reduces the concentration of two-dimensional electron gas at the channel and affects RF characteristics.
  • the present invention proposes a radio frequency device and a method of fabricating the same.
  • the device structure has an extremely thin barrier layer (less than 10 nm), which greatly improves the control ability of the gate to the carriers in the channel; and the device has an insulated gate structure, which solves the leakage problem of the high current high frequency device;
  • the dielectric layer is the intrinsic oxide of the device and has an extremely low surface state, avoiding current collapse effects.
  • the performance of the RF device is achieved by a two-layer aluminum nitride structure in which the upper aluminum nitride contains silicon and even forms an alloy to reduce the ohmic contact resistance of the source and drain.
  • the silicon-containing aluminum nitride layer it is necessary to oxidize the aluminum nitride layer to form an intrinsic oxide or an oxynitride such as alumina or aluminum oxynitride.
  • An insulating gate field effect transistor is prepared on the dielectric layer formed by the oxidation treatment, which can greatly reduce leakage currents of the gate and the drain.
  • This structure can improve the problem that the source and drain regions generate an excessively high Schottky barrier height when the aluminum nitride is used as a barrier layer in a gallium nitride-based high electron mobility transistor.
  • a dielectric layer can be added to the double-layer aluminum nitride structure, which can reduce the stress release on the aluminum nitride surface and improve the RF performance of the device.
  • a radio frequency device includes:
  • a nitride nucleation layer and a nitride buffer layer are sequentially formed on the substrate;
  • a nitride transistor structure formed on the nitride buffer layer, the nitride transistor including a gallium nitride channel layer and a nitride barrier layer, the nitride barrier layer including a gallium nitride channel layer a first nitride layer thereon and a second nitride layer on the first nitride layer, the second nitride layer containing a silicon element;
  • dielectric passivation layer formed on the second nitride layer, wherein the dielectric passivation layer defines a gate region and source and drain regions respectively located on opposite sides of the gate;
  • a nitride barrier layer is an oxide and/or an oxynitride formed by oxidation treatment on the gate region; and a gate formed in the gate region and a source formed in the source region and the drain region Extreme And the drain.
  • the components of the first nitride layer and the second nitride layer are The composition of aluminum is x>75%.
  • the silicon content in the second nitride layer is greater than 1E/I8cm 3 .
  • the silicon content in the second nitride layer exceeds 0.1%, so that the second nitride layer becomes an aluminum silicon nitride alloy.
  • the first nitride layer has a thickness of 0.25 nm to 12 nm; and the second nitride layer has a thickness of 0.25 nm to 12 nm.
  • the dielectric passivation layer comprises a first dielectric passivation layer on the second nitride layer and a second dielectric passivation layer on the first dielectric passivation layer, the first dielectric passivation layer
  • the layer is silicon nitride or silicon aluminum nitride grown by in situ.
  • the second dielectric passivation layer is a silicon nitride layer.
  • the gate region extends through the entire dielectric passivation layer, and the nitride barrier layer is oxidized in whole or in part to oxides and/or oxynitrides corresponding to the position of the gate region, and the gate is located Above the oxide.
  • the gate region extends through the entire dielectric passivation layer, and a third dielectric layer is further disposed between the gate and the dielectric passivation layer, the third dielectric layer being aluminum oxide and oxynitriding One of aluminum, yttria, yttrium aluminum oxide, silicon nitride, silicon aluminum nitride, silicon oxide, silicon oxynitride or any combination thereof.
  • the source region and the drain region extend through the entire dielectric passivation layer, and the source and the drain form an ohmic contact with the nitride barrier layer.
  • the substrate is one of silicon, silicon carbide, sapphire, gallium nitride, aluminum nitride, lithium niobate or SOI.
  • the present invention also provides a method for fabricating the radio frequency device, including the steps:
  • a nitride nucleation layer, a nitride buffer layer, a gallium nitride channel layer, a nitride barrier layer and a dielectric passivation layer are sequentially formed on the substrate, wherein: the nitride barrier layer includes a first nitride layer and a second nitride layer, the second nitride layer containing silicon;
  • a gate process defining a gate region on the dielectric passivation layer, etching the gate region to penetrate the entire dielectric passivation layer, and exposing a nitride barrier in the gate region The layer is oxidized to form an oxide and/or an oxynitride, and a metal is deposited in the gate region to form a gate;
  • Source and drain processes defining a source region and a drain region on the dielectric passivation layer, etching the source region and the drain region to make the source region and the drain region pass through the entire medium
  • a layer is formed by depositing a metal in the source region and the drain region to form a source and a drain, such that the source and the drain form an ohmic contact with the nitride barrier layer.
  • the first The composition of aluminum is x>75%.
  • the silicon content in the second nitride layer is greater than 1E/I8cm 3 .
  • the silicon content in the second nitride layer exceeds 0.1%, so that the second nitride layer becomes an aluminum silicon nitride alloy.
  • the dielectric passivation layer comprises a first dielectric passivation layer on the second nitride layer and a second dielectric passivation layer on the first dielectric passivation layer, wherein the first dielectric is blunt
  • the layer is silicon nitride or silicon aluminum nitride grown by in situ.
  • the second dielectric layer is a silicon nitride layer, and the second dielectric layer is performed by one of plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, microwave plasma sputtering deposition or gas ionization clustering method. Production.
  • the oxide and/or oxynitride formed by the oxidation treatment is all or part of the nitride barrier layer at the corresponding position of the gate region.
  • the oxidation treatment may be treated by one of oxygen ion, ozone or thermal oxidation, and the generated oxide and/or nitrogen oxide may be AlSiON, AlSiO, A10N, A1 2 0 3 or any combination thereof. .
  • the gate process further comprises depositing a third dielectric layer on the entire surface of the device after etching the dielectric passivation layer.
  • the material of the third dielectric layer may be one of aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium aluminum oxide, silicon nitride, silicon aluminum nitride, silicon oxide, silicon oxynitride or any In combination, the deposition method is one of CVD, ALD, MOCVD or PVD.
  • the order of the gate process and the source and drain processes are interchangeable.
  • the radio frequency device of the present invention has the following features:
  • the silicon content is sufficiently high, so that the metal electrode in the drain and source forms an ohmic contact with the silicon-containing aluminum nitride.
  • Reduced The contact resistance of the drain source can provide more free electrons due to the silicon-containing aluminum nitride, further increasing the concentration of the two-dimensional electron gas, thereby improving the RF performance of the device.
  • a layer of silicon nitride or silicon aluminum nitride is grown in situ as a passivation layer of aluminum nitride, thereby reducing surface state density and reducing stress release.
  • the nitride barrier layer at the gate is oxidized to form oxides, oxynitride or a combination thereof, a falling gate leakage current and a source drain leakage current.
  • FIG. 1 is a schematic structural view of a radio frequency device according to a first embodiment of the present invention
  • FIGS. 2 and 3 are schematic structural views of a radio frequency device according to a second embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a radio frequency device according to a third embodiment of the present invention.
  • FIGS. 5A to 5F are schematic flowcharts of a method for fabricating a radio frequency device according to a first embodiment of the present invention
  • FIGS. 6A to 6G are flowcharts showing a method for fabricating a radio frequency device according to a second embodiment of the present invention
  • FIGS. 7A to 7G are third embodiments of the present invention
  • FIG. 8 is a flow chart of a method for fabricating a radio frequency device according to a fourth embodiment of the present invention.
  • the use of aluminum nitride in gallium nitride-based high electron mobility transistors greatly improves the RF performance of the device.
  • the wider band width allows the aluminum nitride material to create a high Schottky barrier when in contact with the metal material, greatly increasing the contact resistance of the drain and source.
  • the prior art in order to adjust the lattice mismatch between aluminum nitride and gallium nitride, the prior art often introduces a gallium nitride layer on the surface of aluminum nitride, which increases the gate to two-dimensional electrons. The distance of the gas, which reduces the RF performance of the device.
  • the present invention proposes a radio frequency device including a gallium nitride-based high electron mobility transistor.
  • the RF device improves the RF performance of the device by making the following changes in the structure:
  • a second silicon-containing nitride layer is formed to make the silicon content high enough to cause the metal electrode in the drain and source and the silicon-containing nitride
  • the formation of an ohmic contact reduces the contact resistance of the drain and source.
  • the silicon-containing nitride can provide more free electrons, the concentration of the two-dimensional electron gas is further increased, thereby improving the radio frequency performance of the device.
  • the composition of the first nitride layer and the second nitride layer is preferably , wherein the composition of aluminum is x>75%.
  • a layer of silicon nitride or silicon aluminum nitride is grown in situ as a passivation layer, thereby reducing the surface state density and reducing the release of stress.
  • the nitride barrier layer at the gate is oxidized to form oxides, oxynitride or a combination thereof, a falling gate leakage current and a source drain leakage current.
  • FIG. 1 is a schematic structural diagram of a radio frequency device according to a first embodiment of the present invention.
  • the radio frequency device of the present invention includes:
  • the bottom 10 of the village may be one of sapphire, silicon carbide, silicon, lithium niobate, SOL gallium nitride or aluminum nitride.
  • a nitride nucleation layer 11 and a nitride buffer layer 12 are formed on the substrate 10.
  • the nitride nucleation layer 11 functions to match the substrate material and the gallium nitride layer.
  • the nucleation layer 11 and the buffer layer 12 provide lattice matching and protection of the substrate for the subsequent growth of the gallium nitride semiconductor material on the substrate.
  • the two layers of materials are not necessary in the semiconductor production process.
  • the nucleation layer 11 and/or the buffer layer 12 may not be used, or the nucleation layer and/or the buffer layer 12 may be replaced with other materials.
  • nitride transistor structure formed on the buffer layer 12, the nitride transistor including a gallium nitride channel layer 13 and a nitride barrier layer 14, the gallium nitride channel layer 13 providing a groove for two-dimensional electron gas movement In the gallium nitride channel layer 13, other components such as aluminum or indium may be incorporated.
  • the nitride barrier layer 14 includes a first nitride layer 141 over the gallium nitride channel layer 13 and a second nitride layer 142 on the first nitride layer, the first nitride layer 141 and
  • the composition of the second nitride layer 142 is preferably The composition of aluminum is x>75%.
  • first nitride layer 141 and the second nitride layer 142 may also be other nitride materials, such as aluminum nitride, aluminum gallium nitride, and the like.
  • the second nitride layer 142 contains silicon, and the content of silicon is as high as possible, for example, exceeding lE18/cm 3 , lE19/cm 3 , or even lE20/cm 3 . More extreme is the formation of silicon-containing alloys, where the proportion of silicon can exceed 0.1%, even 1%, or even 10%.
  • the silicon-doped second nitride layer can reduce the source-drain contact resistance while increasing the two-dimensional electron gas concentration.
  • the first nitride layer 141 has a thickness of 0.25 nm to 12 nm
  • the second nitride layer 142 has a thickness of 0.25 nm to 12 nm.
  • a dielectric passivation layer 15 formed on the second nitride layer 141 the dielectric passivation layer 15 preferably forming a first dielectric passivation layer 151 on the second nitride layer 141 in an in-situ growth manner.
  • the first dielectric passivation layer 151 grown in situ by the layer the surface state of the nitride barrier layer 14 can be reduced, and the stress release of the barrier layer can be reduced.
  • a second dielectric passivation layer 152 may also be grown on the first dielectric passivation layer 151 to further reduce the surface state of the aluminum nitride.
  • the second dielectric passivation layer 152 may be by metal organic chemical vapor deposition MOCVD, atomic layer deposition ALD, ion enhanced chemical vapor deposition PECVD, low pressure chemical vapor deposition LPCVD, molecular beam epitaxy MBE, chemical vapor deposition CVD, gas ionization
  • the material of the first dielectric layer 151 and the second dielectric layer 152 may be one of SiN, SiO 2 , SiAlN, SiON, A1 2 0 3 , Hf0 2 , HfAlO, or a combination thereof. In size, for the in-situ grown first dielectric layer 151, it can be controlled at 0.25 nm to 100 nm.
  • a gate region and a source region and a drain region respectively located on both sides of the gate are defined on the dielectric passivation layer 15, and a gate electrode 161 and a source are formed by depositing a metal or other conductive material in the region.
  • the source 162 and the drain 163 form an ohmic contact with the second nitride layer 142 after extending through the entire dielectric passivation layer 15.
  • the gate electrode 161 extends through the entire dielectric passivation layer 15, and the second nitride 142 is completely oxidized at the position of the gate region, thereby forming an oxide 171 in the region, and the gate electrode 161 is disposed on the oxide 171, requiring It is noted that the oxide 171 can also be a nitrogen oxide or a combination of an oxide and an oxynitride, such as AlSiON, AlSiO, A10N, A1 2 0 3 or any combination thereof.
  • FIG. 2 is a schematic structural diagram of a radio frequency device according to a second embodiment of the present invention.
  • the second nitride layer 142 is thinned at the position of the gate region, and after being thinned, the remaining portion of the second nitride layer is oxidized and formed.
  • the oxide 172 includes a remaining portion of the bottom of the second nitride layer and a portion on the sidewall to form the oxide 172
  • FIG. 3 is another modification of the second embodiment, in which the second nitride layer 142 is completely etched away to expose the first nitride 141, and then the nitride barrier layer of the gate region is exposed. Oxidation treatment, generated oxide 172, including a first nitride top, and a second nitride side Wall part. Other structures are the same as those of the first embodiment, and are not described herein again.
  • a third dielectric layer 153 is further disposed between the gate 161 and the dielectric passivation layer 15 , and the third dielectric layer 153 covers the most of the dielectric passivation layer 15 .
  • the outer side surface and the dielectric passivation layer 15 are located in the recesses of the gate region.
  • the material of the third dielectric layer 153 may be one of aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium aluminum oxide, silicon nitride, silicoalumino, silicon oxide, silicon oxynitride or any combination thereof.
  • Methods of deposition include PECVD, LPCVD, MBE, CVD, ALD, MOCVD or PVD, and the like.
  • radio frequency devices of the above various embodiments may further form a combination of other features such as an oxide and a third dielectric passivation layer, thereby forming more embodiments.
  • the description of the existing embodiments can be obtained by a single tube, and details are not described herein again.
  • 5A to 5F are schematic flow charts showing a method of fabricating a radio frequency device according to a first embodiment of the present invention. As shown in the figure, the production method includes:
  • a nitride nucleation layer 11, a nitride buffer layer 12, a gallium nitride channel layer 13, a nitride barrier layer 14 and a dielectric passivation layer 15 are sequentially formed on the substrate 10, as shown in FIG. 5A. Show.
  • the substrate 10 may be one of sapphire, silicon carbide, silicon, lithium niobate, SOL gallium nitride or aluminum nitride.
  • the gallium nitride channel layer 13 and the nitride barrier layer 14 together form a nitride transistor structure.
  • the gallium nitride channel layer 13 provides a channel for two-dimensional electron gas movement, and the channel layer may also contain other components such as aluminum or indium.
  • the nitride barrier layer 14 is an aluminum-rich quaternary alloy such as AlInGaN, in which the content of aluminum exceeds 75%, which acts as a barrier.
  • the nitride barrier layer 14 includes a first nitride layer 141 and a second nitride layer 142, wherein the second nitride layer 142 contains silicon, and the silicon content thereof is as high as possible, for example, more than lE18/cm 3 , lE19/cm 3 , even lE20/cm 3 , the more extreme case is the formation of alloys, in which the proportion of silicon can exceed 0.1%, even 1%, or even 10%.
  • the doped nitride layer can reduce the source-drain contact resistance while increasing the two-dimensional electron gas concentration.
  • the first nitride layer 141 has a thickness of 0.25 nm to 12 nm
  • the second nitride layer 142 has a thickness of 0.25 nm to 12 nm.
  • the dielectric passivation layer 15 is preferably formed in a first dielectric passivation layer 151 on the second nitride layer 142 by in-situ growth, and the first dielectric passivation layer 151 grown in situ through the layer can be reduced.
  • the surface state of the nitride barrier layer 14 reduces the stress release of the barrier layer.
  • a second dielectric passivation layer 152 may also be grown on the first dielectric passivation layer 151 to further reduce the surface state of the nitride barrier layer 14.
  • the second dielectric passivation layer 152 may be by metal organic chemical vapor deposition MOCVD, atomic layer deposition ALD, ion enhanced chemical vapor deposition PECVD, low pressure chemical vapor deposition LPCVD, molecular beam epitaxy MBE, chemical vapor deposition CVD, gas ionization
  • the material of the first dielectric layer 151 and the second dielectric layer 152 may be one of SiN, SiO 2 , SiAlN, SiON, A1 2 0 3 , Hf0 2 , HfAlO, or a combination thereof. In size, for the in-situ grown first dielectric layer 151, it can be controlled at 0.25 nm to 100 nm.
  • Source and drain processes a source region and a drain region are defined on the dielectric passivation layer 15, and the source region and the drain region are etched such that the source region and the drain region penetrate the entire medium a passivation layer in which a metal or other conductive material is deposited to form a source 162 and a drain 163, such that the source 162 and the drain 163 form an ohmic contact with the nitride barrier layer 14. , as shown in Figures 5B to 5C.
  • the method of etching the source region and the drain region is preferably dry etching based on fluoride ions.
  • the gate process specifically includes the steps of:
  • a gate region is defined on the dielectric passivation layer 15, and the gate region is etched such that the gate region extends through the entire dielectric passivation layer, as shown in FIG. 5D.
  • the method of etching the gate region is preferably a dry etching based on fluoride ions, or a dry etching using another etching gas or a wet etching using an etching solution.
  • the nitride barrier layer 14 exposed in the gate region is oxidized so that the second nitride layer 142 at the corresponding position of the gate region becomes an oxide, an oxynitride or a mixture thereof 171, as shown in FIG. 5E. .
  • the oxidation treatment can be carried out by an oxygen ion/ozone/thermal oxidation method to form an oxide.
  • 171 may be AlSiON, AlSiO, A10N, A1 2 0 3 or any combination thereof.
  • a gate metal or other conductive material is deposited in the gate region to form a gate 161, as in Figure 5F.
  • FIG. 6A to FIG. 6G are schematic flowcharts of a method for fabricating a radio frequency device according to a second embodiment of the present invention.
  • the second embodiment is different from the first embodiment in that
  • the thinning process of the second nitride 142 at the corresponding position of the gate region is further included, and the thinning process is performed by dry etching or wet etching. get on.
  • the gate region is further infiltrated into the second nitride layer 142 in addition to the dielectric passivation layer 15, as shown in Fig. 6E.
  • the nitride barrier layer after the thinning is subjected to an oxidation treatment, and the oxide 172 formed at this time includes the remaining portion of the bottom of the second nitride and the portion on the sidewall, so that the oxide 172 forms a "concave" shape.
  • Figure 6F The rest is the same as the first embodiment, and details are not described herein again.
  • the second nitride 142 when the second nitride 142 is thinned, the second nitride 142 may be completely etched to expose the first nitride 141, and the oxide 172 formed at this time, It has the shape as shown in FIG.
  • FIGS. 7A to 7G are schematic flowcharts showing a method of fabricating a radio frequency device according to a third embodiment of the present invention. In the gate process of this embodiment, the following steps are included:
  • a gate region is defined on the dielectric passivation layer 15, and the gate region is etched such that the gate region extends through the entire dielectric passivation layer, as shown in FIG. 7D.
  • the second nitride 142 at the corresponding position of the gate region is subjected to a thinning process up to the first nitride layer 141 as shown in Fig. 7E.
  • a third dielectric layer 153 is deposited on the surface of the entire device, that is, the third dielectric layer 153 covers the source 162, the drain 163, the second dielectric passivation layer 152, and the inner surface of the recess of the gate region, as shown in FIG. 7F. Shown.
  • the material of the third dielectric layer 153 may be one of aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium aluminum oxide, silicon nitride, silicoalumino, silicon oxide, silicon oxynitride or any combination thereof.
  • Methods of deposition include PECVD, LPCVD, MBE, CVD, ALD, MOCVD or PVD, and the like.
  • a gate metal or other conductive material is deposited in the gate region to form a gate 161, as in Figure 7G. The rest of the same as the other embodiments will not be described again.
  • FIGS. 8A to 8F are schematic flowcharts showing a method of fabricating a radio frequency device according to a fourth embodiment of the present invention.
  • the fourth embodiment is different from the first embodiment in that the order of the source and drain processes and the gate process are reversed, that is, the gate process is performed first, and the dielectric passivation layer is etched.
  • the gate region is deposited and formed with a gate electrode 161, and then the source region and the drain region are respectively etched on both sides of the gate electrode 161 and deposited to form a source electrode 162 and a drain electrode 163.
  • the rest is the same as the first embodiment, and will not be described here.
  • the present invention provides a radio frequency device and a method of fabricating the same, the radio frequency device forming a second silicon nitride-containing nitride layer on the first aluminum nitride-rich first nitride layer.
  • the content of silicon is sufficiently high, so that the metal electrode in the drain and source forms an ohmic contact with the silicon-containing aluminum nitride, thereby reducing the contact resistance of the drain source, and on the other hand, the silicon-containing nitride can provide more
  • the large number of free electrons further increases the concentration of the two-dimensional electron gas, thereby improving the RF performance of the device.
  • the content of aluminum in the first nitride layer and the second nitride layer exceeds 75%.
  • nitride barrier layer at the gate is oxidized to form oxides, oxynitride or a combination thereof to reduce gate leakage current and source drain leakage current.

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Abstract

Disclosed is a radio frequency device; the nitride potential barrier layer (14) of the radio frequency device has two layers of aluminum enriched nitride, wherein the content of aluminum exceeds 75%. The second nitride layer (142) is a silicon-containing nitride; by having sufficiently high silicon content, the metal electrodes in the drain electrode and the source electrode form ohmic contacts with the second nitride layer (142), which not only reduces the contact resistance of the drain and source electrodes, but also further increases the concentration of the two dimensional electron gas due to the fact that the silicon-containing nitride can provide more free electrons, thus improving the radio frequency performance of the devices. At the same time, a medium layer is produced in situ on the above silicon-containing nitride (142), and used as a passivating layer of the nitride, thus reducing the surface state density and the release of stress. During the manufacture of a gate electrode (161), the passivating layer (15) in the gate area is etched away, and the exposed nitride potential barrier layer (14) is treated by oxidization. The oxide produced at the gate electrode (161) can greatly reduce the leakage current of the gate electrode (161) and the leakage current between the source electrode (162) and drain electrode (163). In addition, also provided is a method for manufacturing the above radio frequency device.

Description

一种射频器件及其制作方法  Radio frequency device and manufacturing method thereof
本申请要求于 2012 年 6 月 12 日提交中国专利局、 申请号为 201210192434.7、 发明名称为 "一种射频器件及其制作方法"的中国专利申请 的优先权， 其全部内容通过引用结合在本申请中。  The present application claims priority to Chinese Patent Application No. 201210192434.7, entitled "A Radio Frequency Device and Its Manufacture Method", which is incorporated herein by reference. in.
技术领域 Technical field
本发明属于微电子技术领域， 尤其涉及一种射频器件及其制作方法。  The invention belongs to the field of microelectronic technology, and in particular relates to a radio frequency device and a manufacturing method thereof.
背景技术 Background technique
宽禁带半导体材料氮化镓由于具有禁带宽度大、 电子饱和漂移速度高、击 穿场强高、 导热性能好等特点， 所以比硅和砷化镓更适合于制作高温、 高频、 高压和大功率的器件。氮化镓电子器件在高频率大功率器件方面有 4艮好的应用 前景，从 20世纪 90年代至今， 氮化镓基射频器件的研制一直是氮化镓电子器件 研究的热点之一。  The wide bandgap semiconductor material GaN is more suitable for high temperature, high frequency and high voltage than silicon and gallium arsenide because of its large forbidden band width, high electron saturation drift speed, high breakdown field strength and good thermal conductivity. And high power devices. GaN electronic devices have a good application prospect in high-frequency and high-power devices. Since the 1990s, the development of GaN-based RF devices has been one of the hotspots of GaN electronic devices.
电流增益截止频率和最大振荡频率是射频器件的两个重要性能指标，这两 个指标的好坏主要取决于栅长、栅极对沟道的控制能力， 以及源极和漏极的接 触电阻。 而栅极对沟道的控制能力（跨导）从很大程度上来说是由（栅极的长 度） I (栅极和沟道之间的距离） 的比值决定的。  The current gain cutoff frequency and the maximum oscillation frequency are two important performance indicators of the RF device. The quality of these two indicators depends mainly on the gate length, the gate-to-channel control capability, and the source and drain contact resistance. The gate-to-channel control capability (transconductance) is largely determined by the ratio of (gate length) I (the distance between the gate and the channel).
为了提高氮化镓基高电子迁移率晶体管的射频特性，需要减薄异质结中的 势垒层铝镓氮层的厚度， 同时还需保持高浓度的二维电子气和高的电子迁移 率， 若要同时满足这些要求， 异质结结构中氮化铝 /氮化镓异质结是很好的选 择。 由于氮化铝中存在极强的自发极化电场， 氮化铝和氮化镓之间存在巨大的 压电效应， 因此在氮化铝 /氮化镓异质结中存在极高浓度的二维电子气， 理论 给出的预计值可以达到 5E13/cm2。 这样， 在氮化铝 /氮化镓异质结中， 几个纳 米的氮化铝层就可以提供 4艮高浓度的二维电子气，栅极和沟道的距离也可以做 到最小， 因而氮化铝 /氮化镓异质结是提高氮化镓基高电子迁移率晶体管射频 特性的很好的选择。 In order to improve the radio frequency characteristics of gallium nitride-based high electron mobility transistors, it is necessary to reduce the thickness of the barrier layer aluminum gallium nitride layer in the heterojunction, while maintaining a high concentration of two-dimensional electron gas and high electron mobility. To meet these requirements at the same time, an aluminum nitride/gallium nitride heterojunction in a heterojunction structure is a good choice. Due to the strong spontaneous polarization electric field in aluminum nitride, there is a huge piezoelectric effect between aluminum nitride and gallium nitride, so there is a very high concentration of two-dimensional in the aluminum nitride/gallium nitride heterojunction. Electron gas, the theoretically predicted value can reach 5E13/cm 2 . Thus, in an aluminum nitride/GaN heterojunction, a few nanometers of aluminum nitride layer can provide a high concentration of two-dimensional electron gas, and the distance between the gate and the channel can be minimized. Aluminum nitride/GaN heterojunctions are a good choice for improving the RF characteristics of gallium nitride based high electron mobility transistors.
但是， 由于氮化铝的能带宽度很宽， 超过了 6个电子伏特， 所以会带来金 属与半导体之间高的肖特基势垒高度，极大地提高源极和漏极的接触电阻， 进 而降低器件的射频性能。另外，由于氮化铝和氮化镓之间存在巨大的晶格失配， 会引起氮化铝 /氮化镓异质结中的应力释放， 因此为了稳定氮化铝表面需要额 外引入氮化镓冒层， 此氮化镓冒层的厚度通常在 3 ~ 5纳米范围内， 这就使得栅 极到二维电子气的距离增加， 降低了栅极对沟道的控制能力，从而降低了器件 的射频性能。 而且， 栅极的肖特基接触会引入大的栅极漏电流， 通常人们采用 氟处理的方法， 在沉积栅极金属前用 CF4处理氮化物表面形成氟化物来降低栅 极的漏电流， 但 CF4处理会降低沟道处二维电子气浓度， 影响射频特性。 However, since the aluminum nitride has a wide band width exceeding 6 electron volts, it has a high Schottky barrier height between the metal and the semiconductor, and greatly improves the contact resistance between the source and the drain. This in turn reduces the RF performance of the device. In addition, due to the large lattice mismatch between aluminum nitride and gallium nitride, stress release in the aluminum nitride/gallium nitride heterojunction is caused, so in order to stabilize the surface of the aluminum nitride The gallium nitride layer is externally introduced, and the thickness of the gallium nitride layer is usually in the range of 3 to 5 nanometers, which increases the distance from the gate to the two-dimensional electron gas, and reduces the gate-to-channel control ability. This reduces the RF performance of the device. Moreover, the Schottky contact of the gate introduces a large gate leakage current. Generally, a fluorine treatment method is used to treat the nitride surface with CF4 to form a fluoride before the gate metal is deposited to reduce the leakage current of the gate. CF4 treatment reduces the concentration of two-dimensional electron gas at the channel and affects RF characteristics.
发明内容 Summary of the invention
有鉴于此， 本发明提出了一种射频器件及其制作方法。该器件结构具有极 薄的势垒层 (小于 10nm), 大大提高了栅极对沟道中载流子的控制能力； 同时 该器件具备绝缘栅结构，解决了大电流高频器件的漏电问题； 而且绝缘介质层 是器件的本征氧化物， 具有极低的表面态， 避免了电流崩塌效应。  In view of this, the present invention proposes a radio frequency device and a method of fabricating the same. The device structure has an extremely thin barrier layer (less than 10 nm), which greatly improves the control ability of the gate to the carriers in the channel; and the device has an insulated gate structure, which solves the leakage problem of the high current high frequency device; The dielectric layer is the intrinsic oxide of the device and has an extremely low surface state, avoiding current collapse effects.
所述射频器件的性能是通过双层氮化铝结构来实现，其中上层氮化铝含有 硅， 甚至形成合金， 来降低源极和漏极的欧姆接触电阻。 为了避免该含硅氮化 铝层对栅极漏电流的影响， 需要对氮化铝层进行氧化处理， 生成本征氧化物或 者氮氧化物，如氧化铝或者氮氧化铝。在所述氧化处理生成的介质层上制备绝 缘栅型场效应管， 可以极大降低栅极和漏极的漏电流。这种结构能够改善氮化 铝在作为氮化镓基高电子迁移率晶体管中的势垒层时，源极和漏极区域会产生 过高的肖特基势垒高度的问题。 另外， 在双层氮化铝结构上可以附加介质层， 可以减少氮化铝表面的应力释放， 提高器件的射频性能。  The performance of the RF device is achieved by a two-layer aluminum nitride structure in which the upper aluminum nitride contains silicon and even forms an alloy to reduce the ohmic contact resistance of the source and drain. In order to avoid the effect of the silicon-containing aluminum nitride layer on the gate leakage current, it is necessary to oxidize the aluminum nitride layer to form an intrinsic oxide or an oxynitride such as alumina or aluminum oxynitride. An insulating gate field effect transistor is prepared on the dielectric layer formed by the oxidation treatment, which can greatly reduce leakage currents of the gate and the drain. This structure can improve the problem that the source and drain regions generate an excessively high Schottky barrier height when the aluminum nitride is used as a barrier layer in a gallium nitride-based high electron mobility transistor. In addition, a dielectric layer can be added to the double-layer aluminum nitride structure, which can reduce the stress release on the aluminum nitride surface and improve the RF performance of the device.
根据本发明的目的提出的一种射频器件， 包括：  A radio frequency device according to the object of the present invention includes:
村底；  Village bottom
氮化物成核层和氮化物緩沖层， 依次形成于所述村底上；  a nitride nucleation layer and a nitride buffer layer are sequentially formed on the substrate;
形成于所述氮化物緩沖层上的氮化物晶体管结构，所述氮化物晶体管包括 氮化镓沟道层和氮化物势垒层，所述氮化物势垒层包括位于氮化镓沟道层之上 的第一氮化物层和位于该第一氮化物层上的第二氮化物层，所述第二氮化物层 含有硅元素；  a nitride transistor structure formed on the nitride buffer layer, the nitride transistor including a gallium nitride channel layer and a nitride barrier layer, the nitride barrier layer including a gallium nitride channel layer a first nitride layer thereon and a second nitride layer on the first nitride layer, the second nitride layer containing a silicon element;
形成于所述第二氮化物层上的介质钝化层，所述介质钝化层上定义有栅极 区及分别位于所述栅极两侧的源极区和漏极区；  a dielectric passivation layer formed on the second nitride layer, wherein the dielectric passivation layer defines a gate region and source and drain regions respectively located on opposite sides of the gate;
氮化物势垒层位于栅极区上经过氧化处理形成的氧化物和 /或氮氧化物； 以及形成于所述栅极区中的栅极以及形成于所述源极区和漏极区的源极 和漏极。 a nitride barrier layer is an oxide and/or an oxynitride formed by oxidation treatment on the gate region; and a gate formed in the gate region and a source formed in the source region and the drain region Extreme And the drain.
优选的， 第一氮化物层和第二氮化物层的组分为
Figure imgf000005_0001
其中铝的 组分 x>75%。 Preferably, the components of the first nitride layer and the second nitride layer are
Figure imgf000005_0001
The composition of aluminum is x>75%.
优选的， 所述第二氮化物层中的硅含量大于 1E/I8cm3。 Preferably, the silicon content in the second nitride layer is greater than 1E/I8cm 3 .
优选的， 所述第二氮化物层中的硅含量超过 0.1%, 使得该第二氮化物层 变成铝硅氮合金。  Preferably, the silicon content in the second nitride layer exceeds 0.1%, so that the second nitride layer becomes an aluminum silicon nitride alloy.
优选的， 所述第一氮化物层的厚度为 0.25nm-12nm; 所述第二氮化物层的 厚度为 0.25nm-12nm。  Preferably, the first nitride layer has a thickness of 0.25 nm to 12 nm; and the second nitride layer has a thickness of 0.25 nm to 12 nm.
优选的，所述介质钝化层包括位于该第二氮化物层上的第一介质钝化层和 位于该第一介质钝化层上的第二介质钝化层，所述第一介质钝化层为通过原位 生长的氮化硅或者硅铝氮。  Preferably, the dielectric passivation layer comprises a first dielectric passivation layer on the second nitride layer and a second dielectric passivation layer on the first dielectric passivation layer, the first dielectric passivation layer The layer is silicon nitride or silicon aluminum nitride grown by in situ.
优选的， 所述第二介质钝化层为氮化硅层。  Preferably, the second dielectric passivation layer is a silicon nitride layer.
优选的， 所述栅极区贯穿整个介质钝化层， 所述氮化物势垒层对应所述栅 极区的位置被全部或者部分氧化成氧化物和 /或氮氧化物， 所述栅极位于该氧 化物之上。  Preferably, the gate region extends through the entire dielectric passivation layer, and the nitride barrier layer is oxidized in whole or in part to oxides and/or oxynitrides corresponding to the position of the gate region, and the gate is located Above the oxide.
优选的， 所述栅极区贯穿整个介质钝化层，在所述栅极和所述介质钝化层 之间进一步设有第三介质层，该第三介质层为三氧化二铝、氮氧化铝、氧化铪、 氧化铪铝、 氮化硅、 硅铝氮、 氧化硅、 氮氧化硅中的一种或其任意组合。  Preferably, the gate region extends through the entire dielectric passivation layer, and a third dielectric layer is further disposed between the gate and the dielectric passivation layer, the third dielectric layer being aluminum oxide and oxynitriding One of aluminum, yttria, yttrium aluminum oxide, silicon nitride, silicon aluminum nitride, silicon oxide, silicon oxynitride or any combination thereof.
优选的， 所述源极区和所述漏极区贯穿整个介质钝化层， 所述源极和所述 漏极与所述氮化物势垒层形成欧姆接触。  Preferably, the source region and the drain region extend through the entire dielectric passivation layer, and the source and the drain form an ohmic contact with the nitride barrier layer.
优选的， 所述村底为硅、 碳化硅、 蓝宝石、 氮化镓、 氮化铝、 铌酸锂或 SOI中的一种。  Preferably, the substrate is one of silicon, silicon carbide, sapphire, gallium nitride, aluminum nitride, lithium niobate or SOI.
同时， 本发明还提出了所述的射频器件的制作方法， 包括步骤：  Meanwhile, the present invention also provides a method for fabricating the radio frequency device, including the steps:
村底外延工艺： 在村底上依次形成氮化物成核层、 氮化物緩沖层、 氮化镓 沟道层、 氮化物势垒层和介质钝化层， 其中： 所述氮化物势垒层包括第一氮化 物层和第二氮化物层， 该第二氮化物层含有硅；  Subsequent epitaxial process: a nitride nucleation layer, a nitride buffer layer, a gallium nitride channel layer, a nitride barrier layer and a dielectric passivation layer are sequentially formed on the substrate, wherein: the nitride barrier layer includes a first nitride layer and a second nitride layer, the second nitride layer containing silicon;
栅极工艺： 在所述介质钝化层上定义栅极区， 对所述栅极区进行刻蚀， 使 栅极区贯穿整个介质钝化层，对栅极区中暴露出来的氮化物势垒层进行氧化处 理形成氧化物和 /或氮氧化物， 在该栅极区中沉积金属形成栅极； 源极和漏极工艺： 在所述介质钝化层上定义源极区和漏极区，对所述源极 区和漏极区进行刻蚀，使源极区和漏极区贯穿整个介质钝化层，在所述源极区 和漏极区中沉积金属形成源极和漏极，使源极和漏极与所述氮化物势垒层形成 欧姆接触。 a gate process: defining a gate region on the dielectric passivation layer, etching the gate region to penetrate the entire dielectric passivation layer, and exposing a nitride barrier in the gate region The layer is oxidized to form an oxide and/or an oxynitride, and a metal is deposited in the gate region to form a gate; Source and drain processes: defining a source region and a drain region on the dielectric passivation layer, etching the source region and the drain region to make the source region and the drain region pass through the entire medium A layer is formed by depositing a metal in the source region and the drain region to form a source and a drain, such that the source and the drain form an ohmic contact with the nitride barrier layer.
优选的， 所述第一
Figure imgf000006_0001
其中 铝的组分 x>75%。 Preferably, the first
Figure imgf000006_0001
The composition of aluminum is x>75%.
优选的， 所述第二氮化物层中的硅含量大于 1E/I8cm3。 Preferably, the silicon content in the second nitride layer is greater than 1E/I8cm 3 .
优选的， 所述第二氮化物层中的硅含量超过 0.1%, 使得该第二氮化物层 变成铝硅氮合金。  Preferably, the silicon content in the second nitride layer exceeds 0.1%, so that the second nitride layer becomes an aluminum silicon nitride alloy.
优选的，所述介质钝化层包括位于该第二氮化物层上的第一介质钝化层和 位于该第一介质钝化层上的第二介质钝化层，其中所述第一介质钝化层为通过 原位生长的氮化硅或者硅铝氮。  Preferably, the dielectric passivation layer comprises a first dielectric passivation layer on the second nitride layer and a second dielectric passivation layer on the first dielectric passivation layer, wherein the first dielectric is blunt The layer is silicon nitride or silicon aluminum nitride grown by in situ.
优选的， 所述第二介质层为氮化硅层， 该第二介质层通过等离子体增强化 学气相沉积、低压化学气相沉积、微波等离子溅射沉积或气体离化团束方法中 的一种进行制作。  Preferably, the second dielectric layer is a silicon nitride layer, and the second dielectric layer is performed by one of plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, microwave plasma sputtering deposition or gas ionization clustering method. Production.
优选的， 所述氧化处理形成的氧化物和 /或氮氧化物为该栅极区对应位置 处的氮化物势垒层全部或者部分。  Preferably, the oxide and/or oxynitride formed by the oxidation treatment is all or part of the nitride barrier layer at the corresponding position of the gate region.
优选的， 所述氧化处理可以通过氧离子、 臭氧或热氧化方法中的一种进行 处理， 生成的氧化物和 /或氮氧化物可以为 AlSiON、 AlSiO、 A10N、 A1203或者 其任意组合。 Preferably, the oxidation treatment may be treated by one of oxygen ion, ozone or thermal oxidation, and the generated oxide and/or nitrogen oxide may be AlSiON, AlSiO, A10N, A1 2 0 3 or any combination thereof. .
优选的， 所述栅极工艺在刻蚀完介质钝化层之后， 进一步包括在整个器件 表面沉积第三介质层。  Preferably, the gate process further comprises depositing a third dielectric layer on the entire surface of the device after etching the dielectric passivation layer.
优选的， 所述第三介质层的材质可以是三氧化二铝、 氮氧化铝、 氧化铪、 氧化铪铝、 氮化硅、 硅铝氮、 氧化硅、 氮氧化硅中的一种或其任意组合， 沉积 的方法为 CVD、 ALD、 MOCVD或 PVD中的一种。  Preferably, the material of the third dielectric layer may be one of aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium aluminum oxide, silicon nitride, silicon aluminum nitride, silicon oxide, silicon oxynitride or any In combination, the deposition method is one of CVD, ALD, MOCVD or PVD.
优选的， 所述栅极工艺和所述源极和漏极工艺的次序可以互换。  Preferably, the order of the gate process and the source and drain processes are interchangeable.
相比较现有技术， 本发明的射频器件具有如下的特征：  Compared with the prior art, the radio frequency device of the present invention has the following features:
第一、 通过在富铝氮化物层上， 再制作一层含硅氮化物， 使硅的含量足够 高， 从而使漏、 源极中的金属电极与该含硅氮化铝形成欧姆接触， 一方面降低 了漏源极的接触电阻， 另一方面， 由于含硅氮化铝能够提供更多的自由电子， 进一步提高了二维电子气的浓度， 进而提高了器件的射频性能。 First, by forming a silicon-containing nitride on the aluminum-rich nitride layer, the silicon content is sufficiently high, so that the metal electrode in the drain and source forms an ohmic contact with the silicon-containing aluminum nitride. Reduced The contact resistance of the drain source, on the other hand, can provide more free electrons due to the silicon-containing aluminum nitride, further increasing the concentration of the two-dimensional electron gas, thereby improving the RF performance of the device.
第二、 在上述含硅氮化铝上， 通过原位生长一层氮化硅或硅铝氮， 作为氮 化铝的钝化层， 从而降低表面态密度， 减少应力的释放。  Second, on the above silicon-containing aluminum nitride, a layer of silicon nitride or silicon aluminum nitride is grown in situ as a passivation layer of aluminum nitride, thereby reducing surface state density and reducing stress release.
第三、 对栅极处的氮化物势垒层做氧化处理， 生成氧化物、 氮氧化物或者 其组合， 降氏栅极漏电流和源极漏极漏电流。  Third, the nitride barrier layer at the gate is oxidized to form oxides, oxynitride or a combination thereof, a falling gate leakage current and a source drain leakage current.
附图说明 DRAWINGS
图 1是本发明的第一实施方式的射频器件结构示意图；  1 is a schematic structural view of a radio frequency device according to a first embodiment of the present invention;
图 2和图 3是本发明的第二实施方式的射频器件结构示意图；  2 and 3 are schematic structural views of a radio frequency device according to a second embodiment of the present invention;
图 4是本发明的第三实施方式的射频器件结构示意图；  4 is a schematic structural view of a radio frequency device according to a third embodiment of the present invention;
图 5A至 5F为本发明第一实施方式的射频器件制作方法的流程示意图； 图 6A至 6G为本发明第二实施方式的射频器件制作方法的流程示意图； 图 7A至 7G为本发明第三实施方式的射频器件制作方法的流程示意图； 图 8A至 8F为本发明第四实施方式的射频器件制作方法的流程示意图。 具体实施方式  5A to 5F are schematic flowcharts of a method for fabricating a radio frequency device according to a first embodiment of the present invention; FIGS. 6A to 6G are flowcharts showing a method for fabricating a radio frequency device according to a second embodiment of the present invention; and FIGS. 7A to 7G are third embodiments of the present invention; FIG. 8 is a flow chart of a method for fabricating a radio frequency device according to a fourth embodiment of the present invention. detailed description
正如背景技术中所述， 氮化铝在氮化镓基高电子迁移率晶体管中的应用， 极大地提高了器件的射频性能。然而较宽的能带宽度使氮化铝材料在与金属材 料接触时会产生高的肖特基势垒， 极大地提高了漏、 源极的接触电阻。 同时为 了调节氮化铝和氮化镓之间的晶格失配问题，现有技术往往通过在氮化铝表面 引入氮化镓冒层， 该氮化镓冒层增加了栅极到二维电子气的距离，从而降低了 器件的射频性能。  As described in the background art, the use of aluminum nitride in gallium nitride-based high electron mobility transistors greatly improves the RF performance of the device. However, the wider band width allows the aluminum nitride material to create a high Schottky barrier when in contact with the metal material, greatly increasing the contact resistance of the drain and source. At the same time, in order to adjust the lattice mismatch between aluminum nitride and gallium nitride, the prior art often introduces a gallium nitride layer on the surface of aluminum nitride, which increases the gate to two-dimensional electrons. The distance of the gas, which reduces the RF performance of the device.
为了改善上述两个缺点， 提高氮化镓基高电子迁移率晶体管的射频性能， 本发明提出了一种含有氮化镓基高电子迁移率晶体管的射频器件。该射频器件 通过在结构上做如下改变， 来提高器件的射频性能：  In order to improve the above two disadvantages and improve the radio frequency performance of a gallium nitride-based high electron mobility transistor, the present invention proposes a radio frequency device including a gallium nitride-based high electron mobility transistor. The RF device improves the RF performance of the device by making the following changes in the structure:
第一、 在富铝的第一氮化物层上， 再制作一层含硅的第二氮化物层， 使硅 的含量足够高， 从而使漏、 源极中的金属电极与该含硅氮化物形成欧姆接触， 一方面降低了漏源极的接触电阻， 另一方面， 由于含硅氮化物能够提供更多的 自由电子， 进一步提高了二维电子气的浓度， 进而提高了器件的射频性能。 第 一氮化物层和第二氮化物层的组分优选为
Figure imgf000008_0001
, 其中铝的组分 x>75%。 First, on the aluminum-rich first nitride layer, a second silicon-containing nitride layer is formed to make the silicon content high enough to cause the metal electrode in the drain and source and the silicon-containing nitride The formation of an ohmic contact reduces the contact resistance of the drain and source. On the other hand, since the silicon-containing nitride can provide more free electrons, the concentration of the two-dimensional electron gas is further increased, thereby improving the radio frequency performance of the device. First The composition of the first nitride layer and the second nitride layer is preferably
Figure imgf000008_0001
, wherein the composition of aluminum is x>75%.
第二、 在上述第二氮化物上， 通过原位生长一层氮化硅或硅铝氮， 作为钝 化层， 从而降低表面态密度， 减少应力的释放。  Secondly, on the second nitride, a layer of silicon nitride or silicon aluminum nitride is grown in situ as a passivation layer, thereby reducing the surface state density and reducing the release of stress.
第三、 对栅极处的氮化物势垒层做氧化处理， 生成氧化物、 氮氧化物或者 其组合， 降氏栅极漏电流和源极漏极漏电流。  Third, the nitride barrier layer at the gate is oxidized to form oxides, oxynitride or a combination thereof, a falling gate leakage current and a source drain leakage current.
下面将通过具体实施方式对本发明的技术方案进行清楚、 完整地描述。显 然， 所描述的实施例仅仅是本发明一部分实施例， 而不是全部的实施例。 基于 本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得 的所有其他实施例， 都属于本发明保护的范围。  The technical solutions of the present invention will be clearly and completely described below by way of specific embodiments. It is apparent that the described embodiments are only a part of the embodiments of the invention, rather than all of the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.
请参见图 1 , 图 1是本发明的第一实施方式的射频器件结构示意图。 如图 所示， 本发明的射频器件包括：  Referring to FIG. 1, FIG. 1 is a schematic structural diagram of a radio frequency device according to a first embodiment of the present invention. As shown, the radio frequency device of the present invention includes:
村底 10, 所述村底 10可以为蓝宝石、 碳化硅、 硅、 铌酸锂、 SOL 氮化 镓或氮化铝中的一种。  The bottom 10 of the village may be one of sapphire, silicon carbide, silicon, lithium niobate, SOL gallium nitride or aluminum nitride.
在所述村底 10上形成氮化物成核层 11、 氮化物緩沖层 12。  A nitride nucleation layer 11 and a nitride buffer layer 12 are formed on the substrate 10.
该氮化物成核层 11起到匹配村底材料和氮化镓层的作用。  The nitride nucleation layer 11 functions to match the substrate material and the gallium nitride layer.
需要注意的是，所述成核层 11和緩沖层 12为后续在村底上生长氮化镓半 导体材料提供晶格匹配和保护村底的功效，然而该两层材质并非半导体生产工 艺中必须的，在一些极端情况下可以不用成核层 11和 /或緩沖层 12, 或者该成 核层和 /或緩沖层 12也可以使用其它材质代替。  It should be noted that the nucleation layer 11 and the buffer layer 12 provide lattice matching and protection of the substrate for the subsequent growth of the gallium nitride semiconductor material on the substrate. However, the two layers of materials are not necessary in the semiconductor production process. In some extreme cases, the nucleation layer 11 and/or the buffer layer 12 may not be used, or the nucleation layer and/or the buffer layer 12 may be replaced with other materials.
在所述緩沖层 12上形成的氮化物晶体管结构， 该氮化物晶体管包括氮化 镓沟道层 13和氮化物势垒层 14, 该氮化镓沟道层 13提供二维电子气运动的 沟道， 在该氮化镓沟道层 13中， 也可以掺入铝或者铟等其他成分。 该氮化物 势垒层 14包括位于氮化镓沟道层 13之上的第一氮化物层 141和位于该第一氮 化物层上的第二氮化物层 142, 该第一氮化物层 141和第二氮化物层 142的组 分优选为
Figure imgf000008_0002
其中铝的组分 x>75%, 当然该第一氮化物层 141和第 二氮化物层 142也可以是其他氮化物材料， 比如氮化铝、 铝镓氮等。 所述第二 氮化物层 142含有硅， 其硅的含量要尽量高， 比如超过 lE18/cm3, lE19/cm3, 甚至 lE20/cm3。 更加极端的情况是生成含硅合金， 其中硅的比例可以超过 0.1%,甚至 1%,甚至 10%。该掺杂硅的第二氮化物层可以降低源漏接触电阻， 同时增加二维电子气浓度。 所述第一氮化物层 141的厚度为 0.25nm至 12nm, 所述第二氮化物层 142的厚度为 0.25nm至 12nm。 a nitride transistor structure formed on the buffer layer 12, the nitride transistor including a gallium nitride channel layer 13 and a nitride barrier layer 14, the gallium nitride channel layer 13 providing a groove for two-dimensional electron gas movement In the gallium nitride channel layer 13, other components such as aluminum or indium may be incorporated. The nitride barrier layer 14 includes a first nitride layer 141 over the gallium nitride channel layer 13 and a second nitride layer 142 on the first nitride layer, the first nitride layer 141 and The composition of the second nitride layer 142 is preferably
Figure imgf000008_0002
The composition of aluminum is x>75%. Of course, the first nitride layer 141 and the second nitride layer 142 may also be other nitride materials, such as aluminum nitride, aluminum gallium nitride, and the like. The second nitride layer 142 contains silicon, and the content of silicon is as high as possible, for example, exceeding lE18/cm 3 , lE19/cm 3 , or even lE20/cm 3 . More extreme is the formation of silicon-containing alloys, where the proportion of silicon can exceed 0.1%, even 1%, or even 10%. The silicon-doped second nitride layer can reduce the source-drain contact resistance while increasing the two-dimensional electron gas concentration. The first nitride layer 141 has a thickness of 0.25 nm to 12 nm, and the second nitride layer 142 has a thickness of 0.25 nm to 12 nm.
形成于所述第二氮化物层 141上的介质钝化层 15, 所述介质钝化层 15优 选以原位生长方式形成在所述第二氮化物层 141上的第一介质钝化层 151 , 通 过该层原位生长的第一介质钝化层 151 , 可以减少氮化物势垒层 14的表面态， 减少势垒层的应力释放。进一步地，还可以在所述第一介质钝化层 151上生长 第二介质钝化层 152, 使氮化铝的表面态进一步降低。 该第二介质钝化层 152 可以是通过金属有机化学气相沉积 MOCVD、 原子层沉积 ALD、 离子体增强化 学气相沉积 PECVD、 低压化学气相沉积 LPCVD、 分子束外延 MBE、 化学气相 沉积 CVD、 气体离化团束 GCIB等方法制作， 该第一介质层 151和第二介质层 152的材质可以为 SiN、 Si02、 SiAlN、 SiON、 A1203、 Hf02、 HfAlO中的一种， 或者是其组合。 尺寸上， 对于原位生长的第一介质层 151 , 可以控制在 0.25nm 至 100nm。 a dielectric passivation layer 15 formed on the second nitride layer 141, the dielectric passivation layer 15 preferably forming a first dielectric passivation layer 151 on the second nitride layer 141 in an in-situ growth manner. By the first dielectric passivation layer 151 grown in situ by the layer, the surface state of the nitride barrier layer 14 can be reduced, and the stress release of the barrier layer can be reduced. Further, a second dielectric passivation layer 152 may also be grown on the first dielectric passivation layer 151 to further reduce the surface state of the aluminum nitride. The second dielectric passivation layer 152 may be by metal organic chemical vapor deposition MOCVD, atomic layer deposition ALD, ion enhanced chemical vapor deposition PECVD, low pressure chemical vapor deposition LPCVD, molecular beam epitaxy MBE, chemical vapor deposition CVD, gas ionization The material of the first dielectric layer 151 and the second dielectric layer 152 may be one of SiN, SiO 2 , SiAlN, SiON, A1 2 0 3 , Hf0 2 , HfAlO, or a combination thereof. In size, for the in-situ grown first dielectric layer 151, it can be controlled at 0.25 nm to 100 nm.
在所述介质钝化层 15上定义有栅极区及分别位于所述栅极两侧的源极区 和漏极区，通过在这些区域沉积金属或其它导电材料，从而形成栅极 161以及 源极 162和漏极 163。 其中源极 162和漏极 163贯穿整个介质钝化层 15之后， 与第二氮化物层 142形成欧姆接触。 栅极 161贯穿整个介质钝化层 15, 且第 二氮化物 142位于该栅极区的位置被全部氧化，从而在该区域形成氧化物 171 , 栅极 161正好设置于该氧化物 171上， 需要指出的是， 该氧化物 171也可以是 氮氧化物或者氧化物与氮氧化物的组合， 比如 AlSiON、 AlSiO、 A10N、 A1203 或者其任意组合。 A gate region and a source region and a drain region respectively located on both sides of the gate are defined on the dielectric passivation layer 15, and a gate electrode 161 and a source are formed by depositing a metal or other conductive material in the region. Pole 162 and drain 163. The source 162 and the drain 163 form an ohmic contact with the second nitride layer 142 after extending through the entire dielectric passivation layer 15. The gate electrode 161 extends through the entire dielectric passivation layer 15, and the second nitride 142 is completely oxidized at the position of the gate region, thereby forming an oxide 171 in the region, and the gate electrode 161 is disposed on the oxide 171, requiring It is noted that the oxide 171 can also be a nitrogen oxide or a combination of an oxide and an oxynitride, such as AlSiON, AlSiO, A10N, A1 2 0 3 or any combination thereof.
请参见图 2, 图 2是本发明的第二实施方式的射频器件结构示意图。 如图 所示， 在本实施方式中， 第二氮化物层 142位于该栅极区的位置被减薄， 减薄 后， 对该位置处剩余部分的第二氮化物层进行氧化处理， 形成的氧化物 172 包括第二氮化物层底部的剩余部分以及侧壁上的部分， 使该氧化物 172 形成 Referring to FIG. 2, FIG. 2 is a schematic structural diagram of a radio frequency device according to a second embodiment of the present invention. As shown in the figure, in the present embodiment, the second nitride layer 142 is thinned at the position of the gate region, and after being thinned, the remaining portion of the second nitride layer is oxidized and formed. The oxide 172 includes a remaining portion of the bottom of the second nitride layer and a portion on the sidewall to form the oxide 172
"凹" 字形。 请参见图 3, 图 3是第二实施方式的另外一种变形， 即将第二氮 化物层 142完全刻蚀掉， 露出第一氮化物 141 , 然后对该栅极区的氮化物势垒 层进行氧化处理，生成的氧化物 172，包括第一氮化物顶部， 以及第二氮化物侧 壁部分。 其它与第一实施方式的结构相同， 此处不再赘述。 "Concave" font. Referring to FIG. 3, FIG. 3 is another modification of the second embodiment, in which the second nitride layer 142 is completely etched away to expose the first nitride 141, and then the nitride barrier layer of the gate region is exposed. Oxidation treatment, generated oxide 172, including a first nitride top, and a second nitride side Wall part. Other structures are the same as those of the first embodiment, and are not described herein again.
图 4是本发明第三实施方式的射频器件结构示意图。如图所示，在本实施 方式中， 在所述栅极 161 和所述介质钝化层 15 之间进一步设有第三介质层 153, 该第三介质层 153覆盖介质钝化层 15 的最外侧表面以及该介质钝化层 15位于栅极区的凹槽之中。 该第三介质层 153的材质可以为三氧化二铝、 氮 氧化铝、 氧化铪、 氧化铪铝、 氮化硅、 硅铝氮、 氧化硅、 氮氧化硅中的一种或 其任意组合。沉积的方法包括 PECVD、 LPCVD、 MBE、 CVD、 ALD、 MOCVD 或 PVD等等。  4 is a schematic structural view of a radio frequency device according to a third embodiment of the present invention. As shown in the figure, in the embodiment, a third dielectric layer 153 is further disposed between the gate 161 and the dielectric passivation layer 15 , and the third dielectric layer 153 covers the most of the dielectric passivation layer 15 . The outer side surface and the dielectric passivation layer 15 are located in the recesses of the gate region. The material of the third dielectric layer 153 may be one of aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium aluminum oxide, silicon nitride, silicoalumino, silicon oxide, silicon oxynitride or any combination thereof. Methods of deposition include PECVD, LPCVD, MBE, CVD, ALD, MOCVD or PVD, and the like.
这里要指出的是，以上各种实施方式的射频器件，还可以通过进一步组合， 比如将氧化物和第三介质钝化层等特征进行任意组合搭配，从而形成更多的实 施方式， 由于这些组合通过对已有实施方式的描述可以筒单的得到， 此处不再 赘述。  It should be noted that the radio frequency devices of the above various embodiments may further form a combination of other features such as an oxide and a third dielectric passivation layer, thereby forming more embodiments. The description of the existing embodiments can be obtained by a single tube, and details are not described herein again.
下面， 将对本发明中， 用以形成上述各种射频器件的制作方法， 通过具体 实施方式做详细描述。  Hereinafter, the manufacturing method for forming the above various radio frequency devices in the present invention will be described in detail through specific embodiments.
图 5A至 5F为本发明第一实施方式的射频器件制作方法的流程示意图。 如图所示， 该制作方法包括：  5A to 5F are schematic flow charts showing a method of fabricating a radio frequency device according to a first embodiment of the present invention. As shown in the figure, the production method includes:
村底外延工艺：在村底上 10依次形成氮化物成核层 11、氮化物緩沖层 12、 氮化镓沟道层 13、 氮化物势垒层 14和介质钝化层 15, 如图 5A所示。  The substrate epitaxial process: a nitride nucleation layer 11, a nitride buffer layer 12, a gallium nitride channel layer 13, a nitride barrier layer 14 and a dielectric passivation layer 15 are sequentially formed on the substrate 10, as shown in FIG. 5A. Show.
在该步骤中， 村底 10可以为蓝宝石、 碳化硅、 硅、 铌酸锂、 SOL 氮化镓 或氮化铝中的一种。  In this step, the substrate 10 may be one of sapphire, silicon carbide, silicon, lithium niobate, SOL gallium nitride or aluminum nitride.
氮化镓沟道层 13和氮化物势垒层 14一起形成氮化物晶体管结构。该氮化 镓沟道层 13提供二维电子气运动的沟道， 此沟道层也可以包含铝或者铟等其 他成分。 该氮化物势垒层 14 为富铝结构的四元合金如 AlInGaN, 其中铝的含 量超过 75%, 起到势垒的作用。 进一步地， 该氮化物势垒层 14包括第一氮化 物层 141和第二氮化物层 142, 其中该第二氮化物层 142含有硅， 其硅的含量 要尽量高， 比如超过 lE18/cm3, lE19/cm3, 甚至 lE20/cm3, 更加极端的情况 是生成合金， 其中硅的比例可以超过 0.1%, 甚至 1%, 甚至 10%。 该掺杂氮化 物层可以降低源漏接触电阻， 同时增加二维电子气浓度。 所述第一氮化物层 141的厚度为 0.25nm至 12nm,所述第二氮化物层 142的厚度为 0.25nm至 12nm。 所述介质钝化层 15优选以原位生长方式形成在所述第二氮化物层 142上 的第一介质钝化层 151 , 通过该层原位生长的第一介质钝化层 151 , 可以减少 氮化物势垒层 14的表面态， 减少势垒层的应力释放。 进一步地， 还可以在所 述第一介质钝化层 151上生长第二介质钝化层 152, 使氮化物势垒层 14的表 面态进一步降低。 该第二介质钝化层 152 可以是通过金属有机化学气相沉积 MOCVD、原子层沉积 ALD、 离子体增强化学气相沉积 PECVD、低压化学气相 沉积 LPCVD、 分子束外延 MBE、 化学气相沉积 CVD、 气体离化团束 GCIB等方 法制作，该第一介质层 151和第二介质层 152的材质可以为 SiN、 Si02、 SiAlN、 SiON、 A1203、 Hf02、 HfAlO中的一种， 或者是其组合。 尺寸上， 对于原位生 长的第一介质层 151 , 可以控制在 0.25nm至 100nm。 The gallium nitride channel layer 13 and the nitride barrier layer 14 together form a nitride transistor structure. The gallium nitride channel layer 13 provides a channel for two-dimensional electron gas movement, and the channel layer may also contain other components such as aluminum or indium. The nitride barrier layer 14 is an aluminum-rich quaternary alloy such as AlInGaN, in which the content of aluminum exceeds 75%, which acts as a barrier. Further, the nitride barrier layer 14 includes a first nitride layer 141 and a second nitride layer 142, wherein the second nitride layer 142 contains silicon, and the silicon content thereof is as high as possible, for example, more than lE18/cm 3 , lE19/cm 3 , even lE20/cm 3 , the more extreme case is the formation of alloys, in which the proportion of silicon can exceed 0.1%, even 1%, or even 10%. The doped nitride layer can reduce the source-drain contact resistance while increasing the two-dimensional electron gas concentration. The first nitride layer 141 has a thickness of 0.25 nm to 12 nm, and the second nitride layer 142 has a thickness of 0.25 nm to 12 nm. The dielectric passivation layer 15 is preferably formed in a first dielectric passivation layer 151 on the second nitride layer 142 by in-situ growth, and the first dielectric passivation layer 151 grown in situ through the layer can be reduced. The surface state of the nitride barrier layer 14 reduces the stress release of the barrier layer. Further, a second dielectric passivation layer 152 may also be grown on the first dielectric passivation layer 151 to further reduce the surface state of the nitride barrier layer 14. The second dielectric passivation layer 152 may be by metal organic chemical vapor deposition MOCVD, atomic layer deposition ALD, ion enhanced chemical vapor deposition PECVD, low pressure chemical vapor deposition LPCVD, molecular beam epitaxy MBE, chemical vapor deposition CVD, gas ionization The material of the first dielectric layer 151 and the second dielectric layer 152 may be one of SiN, SiO 2 , SiAlN, SiON, A1 2 0 3 , Hf0 2 , HfAlO, or a combination thereof. In size, for the in-situ grown first dielectric layer 151, it can be controlled at 0.25 nm to 100 nm.
源极和漏极工艺： 在所述介质钝化层 15上定义源极区和漏极区， 对所述 源极区和漏极区进行刻蚀，使源极区和漏极区贯穿整个介质钝化层，在所述源 极区和漏极区中沉积金属或其它导电材料形成源极 162和漏极 163,使源极 162 和漏极 163与所述氮化物势垒层 14形成欧姆接触， 如图 5B至 5C所示。  Source and drain processes: a source region and a drain region are defined on the dielectric passivation layer 15, and the source region and the drain region are etched such that the source region and the drain region penetrate the entire medium a passivation layer in which a metal or other conductive material is deposited to form a source 162 and a drain 163, such that the source 162 and the drain 163 form an ohmic contact with the nitride barrier layer 14. , as shown in Figures 5B to 5C.
在该步骤中，对源极区和漏极区刻蚀采用的方法优选为基于氟离子的干法 蚀。  In this step, the method of etching the source region and the drain region is preferably dry etching based on fluoride ions.
栅极工艺， 在本实施方式中， 该栅极工艺具体包括步骤：  The gate process, in this embodiment, the gate process specifically includes the steps of:
在所述介质钝化层 15上定义栅极区， 对所述栅极区进行刻蚀， 使栅极区 贯穿整个介质钝化层， 如图 5D。 在该步骤中， 对栅极区刻蚀采用的方法优选 为基于氟离子的干法刻蚀，当然也可以是使用其它刻蚀气的干法刻蚀或者使用 腐蚀液进行的湿法刻蚀。  A gate region is defined on the dielectric passivation layer 15, and the gate region is etched such that the gate region extends through the entire dielectric passivation layer, as shown in FIG. 5D. In this step, the method of etching the gate region is preferably a dry etching based on fluoride ions, or a dry etching using another etching gas or a wet etching using an etching solution.
对该栅极区中露出的氮化物势垒层 14进行氧化处理， 使该栅极区对应位 置处的第二氮化物层 142全部变成氧化物、氮氧化物或其混合物 171 ,如图 5E。 在该步骤中氧化处理可以通过氧离子 /臭氧 /热氧化等方法处理， 生成的氧化物 The nitride barrier layer 14 exposed in the gate region is oxidized so that the second nitride layer 142 at the corresponding position of the gate region becomes an oxide, an oxynitride or a mixture thereof 171, as shown in FIG. 5E. . In this step, the oxidation treatment can be carried out by an oxygen ion/ozone/thermal oxidation method to form an oxide.
171可以为 AlSiON、 AlSiO、 A10N 、 A1203或者其任意组合。 171 may be AlSiON, AlSiO, A10N, A1 2 0 3 or any combination thereof.
在该栅极区中沉积栅极金属或其它导电材料形成栅极 161 , 如图 5F。  A gate metal or other conductive material is deposited in the gate region to form a gate 161, as in Figure 5F.
请参见图 6A至 6G, 图 6A至 6G为本发明第二实施方式的射频器件制作 方法的流程示意图。该第二实施方式与第一实施方式的不同之处在于，在所述 栅极工艺中， 对介质钝化层 15刻蚀完成后， 还包括对栅极区对应位置处的第 二氮化物 142的减薄工艺， 该减薄工艺通过干法刻蚀或者湿法刻蚀进行。通过 该减薄工艺， 使栅极区除了贯穿介质钝化层 15之外， 进一步渗透至第二氮化 物层 142中， 如图 6E所示。 然后对减薄之后的氮化物势垒层实施氧化处理， 此时处理形成的氧化物 172 包括第二氮化物底部的剩余部分以及侧壁上的部 分， 使该氧化物 172形成 "凹" 字形， 如图 6F所示。 其余与第一实施方式相 同之处， 此处不再赘述。 需要注意的是， 在该实施方式中， 在对第二氮化物 142进行减薄时， 可以将该第二氮化物 142完全刻蚀， 露出第一氮化物 141 , 此时形成的氧化物 172，具有如图 3的形状。 6A to 6G, FIG. 6A to FIG. 6G are schematic flowcharts of a method for fabricating a radio frequency device according to a second embodiment of the present invention. The second embodiment is different from the first embodiment in that In the gate process, after the dielectric passivation layer 15 is etched, the thinning process of the second nitride 142 at the corresponding position of the gate region is further included, and the thinning process is performed by dry etching or wet etching. get on. By this thinning process, the gate region is further infiltrated into the second nitride layer 142 in addition to the dielectric passivation layer 15, as shown in Fig. 6E. Then, the nitride barrier layer after the thinning is subjected to an oxidation treatment, and the oxide 172 formed at this time includes the remaining portion of the bottom of the second nitride and the portion on the sidewall, so that the oxide 172 forms a "concave" shape. As shown in Figure 6F. The rest is the same as the first embodiment, and details are not described herein again. It should be noted that, in this embodiment, when the second nitride 142 is thinned, the second nitride 142 may be completely etched to expose the first nitride 141, and the oxide 172 formed at this time, It has the shape as shown in FIG.
请参见图 7A至 7G, 图 7A至 7G为本发明第三实施方式的射频器件制作 方法的流程示意图。 在该实施方式的栅极工艺中， 包括如下步骤：  Referring to FIGS. 7A to 7G, FIGS. 7A to 7G are schematic flowcharts showing a method of fabricating a radio frequency device according to a third embodiment of the present invention. In the gate process of this embodiment, the following steps are included:
在所述介质钝化层 15上定义栅极区， 对所述栅极区进行刻蚀， 使栅极区 贯穿整个介质钝化层， 如图 7D所示。  A gate region is defined on the dielectric passivation layer 15, and the gate region is etched such that the gate region extends through the entire dielectric passivation layer, as shown in FIG. 7D.
对栅极区对应位置处的第二氮化物 142进行减薄工艺，直至第一氮化物层 141 , 如图 7E所示。  The second nitride 142 at the corresponding position of the gate region is subjected to a thinning process up to the first nitride layer 141 as shown in Fig. 7E.
在整个器件的表面沉积第三介质层 153, 即该第三介质层 153覆盖于源极 162、 漏极 163、 第二介质钝化层 152, 以及栅极区的凹槽内表面， 如图 7F所 示。第三介质层 153的材质可以是三氧化二铝、 氮氧化铝、氧化铪、氧化铪铝、 氮化硅、 硅铝氮、 氧化硅、 氮氧化硅中的一种或其任意组合。 沉积的方法包括 PECVD、 LPCVD、 MBE、 CVD、 ALD、 MOCVD或 PVD等等。  A third dielectric layer 153 is deposited on the surface of the entire device, that is, the third dielectric layer 153 covers the source 162, the drain 163, the second dielectric passivation layer 152, and the inner surface of the recess of the gate region, as shown in FIG. 7F. Shown. The material of the third dielectric layer 153 may be one of aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium aluminum oxide, silicon nitride, silicoalumino, silicon oxide, silicon oxynitride or any combination thereof. Methods of deposition include PECVD, LPCVD, MBE, CVD, ALD, MOCVD or PVD, and the like.
在该栅极区中沉积栅极金属或其它导电材料形成栅极 161 , 如图 7G。 其余与其他实施方式相同之处不再赘述。  A gate metal or other conductive material is deposited in the gate region to form a gate 161, as in Figure 7G. The rest of the same as the other embodiments will not be described again.
请参见图 8A至 8F, 图 8A至 8F为本发明第四实施方式的射频器件制作 方法的流程示意图。该第四实施方式与第一实施方式的不同之处在于，将源极 和漏极工艺与栅极工艺的先后次序进行了调换， 即先进行栅极工艺，在介质钝 化层上刻蚀出栅极区并沉积形成栅极 161 , 然后再在该栅极 161的两侧分别刻 蚀出源极区和漏极区并沉积形成源极 162和漏极 163。 其余与第一实施方式相 同之处， 此处不再赘述。  Referring to FIGS. 8A to 8F, FIGS. 8A to 8F are schematic flowcharts showing a method of fabricating a radio frequency device according to a fourth embodiment of the present invention. The fourth embodiment is different from the first embodiment in that the order of the source and drain processes and the gate process are reversed, that is, the gate process is performed first, and the dielectric passivation layer is etched. The gate region is deposited and formed with a gate electrode 161, and then the source region and the drain region are respectively etched on both sides of the gate electrode 161 and deposited to form a source electrode 162 and a drain electrode 163. The rest is the same as the first embodiment, and will not be described here.
需要指出的是， 除了上述的四种实施方式之外，还可以将各种实施方式对 应的各个工艺进行其它组合，从而形成另外的实施方式， 由于这种组合可以通 过给出的实施方式进行筒单的变换即能得到， 在此不再一一列举。 It should be noted that in addition to the above four embodiments, various embodiments may be The other processes are carried out in other combinations to form further embodiments, since such a combination can be obtained by a single embodiment of the embodiment, which will not be enumerated here.
综上所述， 本发明提出了一种射频器件及其制作方法， 该射频器件通过第 一、在富铝的第一氮化物层上， 再制作一层含硅的第二氮化物层， 使硅的含量 足够高， 从而使漏、 源极中的金属电极与该含硅氮化铝形成欧姆接触， 一方面 降低了漏源极的接触电阻， 另一方面， 由于含硅氮化物能够提供更多的自由电 子， 进一步提高了二维电子气的浓度， 进而提高了器件的射频性能。 第一氮化 物层和第二氮化物层中的铝的含量超过 75%。 第二、在上述含硅氮化铝上， 通 过原位生长一层氮化硅或硅铝氮，作为氮化物势垒层的钝化层，从而降低表面 态密度， 减少应力的释放。 第三、 对栅极处的氮化物势垒层做氧化处理， 生成 氧化物、 氮氧化物或者其组合， 降低栅极漏电流和源极漏极漏电流。  In summary, the present invention provides a radio frequency device and a method of fabricating the same, the radio frequency device forming a second silicon nitride-containing nitride layer on the first aluminum nitride-rich first nitride layer. The content of silicon is sufficiently high, so that the metal electrode in the drain and source forms an ohmic contact with the silicon-containing aluminum nitride, thereby reducing the contact resistance of the drain source, and on the other hand, the silicon-containing nitride can provide more The large number of free electrons further increases the concentration of the two-dimensional electron gas, thereby improving the RF performance of the device. The content of aluminum in the first nitride layer and the second nitride layer exceeds 75%. Secondly, on the above silicon-containing aluminum nitride, a layer of silicon nitride or silicon aluminum nitride is grown in situ as a passivation layer of the nitride barrier layer, thereby lowering the surface state density and reducing the release of stress. Third, the nitride barrier layer at the gate is oxidized to form oxides, oxynitride or a combination thereof to reduce gate leakage current and source drain leakage current.
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本 发明。 对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见 的， 本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下， 在 其它实施例中实现。 因此， 本发明将不会被限制于本文所示的这些实施例， 而 是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。  The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments are obvious to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention is not to be limited to the embodiments shown herein, but is to be accorded to the broadest scope of the principles and novel features disclosed herein.

Claims

权 利 要 求 Rights request
1、 一种射频器件， 其特征在于， 包括： 1. A radio frequency device, characterized by: including:
村底； the bottom of the village;
氮化物成核层和氮化物緩沖层， 依次形成于所述村底上； A nitride nucleation layer and a nitride buffer layer are formed on the village bottom in sequence;
形成于所述氮化物緩沖层上的氮化物晶体管结构，所述氮化物晶体管包括 氮化镓沟道层和氮化物势垒层，所述氮化物势垒层包括位于氮化镓沟道层之上 的第一氮化物层和位于该第一氮化物层上的第二氮化物层，所述第二氮化物层 含有硅元素； A nitride transistor structure formed on the nitride buffer layer. The nitride transistor includes a gallium nitride channel layer and a nitride barrier layer. The nitride barrier layer includes a nitride barrier layer located between the gallium nitride channel layer and the nitride buffer layer. a first nitride layer on the first nitride layer and a second nitride layer on the first nitride layer, the second nitride layer containing silicon element;
形成于所述第二氮化物层上的介质钝化层，所述介质钝化层上定义有栅极 区及分别位于所述栅极区两侧的源极区和漏极区； A dielectric passivation layer formed on the second nitride layer, the dielectric passivation layer defines a gate region and source and drain regions respectively located on both sides of the gate region;
位于栅极区的氮化物势垒层经过氧化处理形成的氧化物和 /或氮氧化物； 以及形成于所述栅极区中的栅极以及形成于所述源极区和漏极区的源极 和漏极。 The nitride barrier layer located in the gate region is an oxide and/or an oxynitride formed through an oxidation treatment; as well as a gate electrode formed in the gate region and a source formed in the source region and drain region pole and drain.
2、 如权利要求 1所述的射频器件， 其特征在于： 第一氮化物层和第二氮
Figure imgf000014_0001
其中铝的组分 x>75%。 2. The radio frequency device according to claim 1, characterized in that: the first nitride layer and the second nitrogen layer
Figure imgf000014_0001
The aluminum component x>75%.
3、 如权利要求 1所述的射频器件， 其特征在于： 所述第二氮化物层中的 硅含量大于 1E/I8cm3。 3. The radio frequency device according to claim 1, characterized in that: the silicon content in the second nitride layer is greater than 1E/I8cm 3 .
4、 如权利要求 1所述的射频器件， 其特征在于： 所述第二氮化物层中的 硅含量超过 0.1%。 4. The radio frequency device according to claim 1, characterized in that: the silicon content in the second nitride layer exceeds 0.1%.
5、 如权利要求 1所述的射频器件， 其特征在于： 所述第一氮化物层的厚 度为 0.25nm-12nm; 所述第二氮化物层的厚度为 0.25nm-12nm。 5. The radio frequency device according to claim 1, characterized in that: the thickness of the first nitride layer is 0.25nm-12nm; the thickness of the second nitride layer is 0.25nm-12nm.
6、 如权利要求 1所述的射频器件， 其特征在于： 所述介质钝化层包括位 于该第二氮化物层上的第一介质钝化层和位于该第一介质钝化层上的第二介 质钝化层。 6. The radio frequency device according to claim 1, characterized in that: the dielectric passivation layer includes a first dielectric passivation layer located on the second nitride layer and a third dielectric passivation layer located on the first dielectric passivation layer. Two dielectric passivation layers.
7、 如权利要求 6所述的射频器件， 其特征在于： 所述第一介质钝化层和 第二介质钝化层为 SiN、 Si02、 SiAlN、 SiON、 A1203、 Hf02、 HfAlO中的一种， 或者是其组合。 7. The radio frequency device according to claim 6, characterized in that: the first dielectric passivation layer and the second dielectric passivation layer are SiN, Si02, SiAlN, SiON, A1 2 0 3 , Hf0 2 , HfAlO one, or a combination thereof.
8、 如权利要求 1所述的射频器件， 其特征在于： 所述栅极区贯穿整个介 质钝化层，所述氮化物势垒层对应所述栅极区的位置被全部或者部分氧化成氧 化物， 所述栅极位于该氧化物之上。 8. The radio frequency device according to claim 1, characterized in that: the gate region penetrates the entire dielectric passivation layer, and the nitride barrier layer is fully or partially oxidized into oxygen at a position corresponding to the gate region. oxide, and the gate is located on the oxide.
9、 如权利要求 1所述的射频器件， 其特征在于： 所述栅极区贯穿整个介 质钝化层，在所述栅极和所述介质钝化层之间进一步设有第三介质层， 该第三 介质层为三氧化二铝、 氮氧化铝、 氧化铪、 氧化铪铝、 氮化硅、 硅铝氮、 氧化 硅、 氮氧化硅中的一种或其任意组合。 9. The radio frequency device according to claim 1, characterized in that: the gate region penetrates the entire dielectric passivation layer, and a third dielectric layer is further provided between the gate and the dielectric passivation layer, The third dielectric layer is one of aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium aluminum oxide, silicon nitride, silicon aluminum nitride, silicon oxide, silicon oxynitride, or any combination thereof.
10、 如权利要求 1所述的射频器件， 其特征在于： 所述源极区和所述漏极 区贯穿整个介质钝化层，所述源极和所述漏极与所述氮化物势垒层形成欧姆接 触。 10. The radio frequency device according to claim 1, characterized in that: the source electrode region and the drain electrode region penetrate the entire dielectric passivation layer, and the source electrode and the drain electrode are in contact with the nitride barrier. layers form ohmic contact.
11、如权利要求 1所述的射频器件，其特征在于： 所述村底为硅、碳化硅、 蓝宝石、 氮化镓、 氮化铝、 铌酸锂或 SOI中的一种。 11. The radio frequency device according to claim 1, characterized in that: the substrate is one of silicon, silicon carbide, sapphire, gallium nitride, aluminum nitride, lithium niobate or SOI.
12、 一种如权利要求 1至 11任意一项所述的射频器件的制作方法， 其特 征在于， 包括步骤： 12. A method for manufacturing a radio frequency device according to any one of claims 1 to 11, characterized in that it includes the steps:
村底外延工艺： 在村底上依次形成氮化物成核层、 氮化物緩沖层、 氮化镓 沟道层、 氮化物势垒层和介质钝化层， 其中： 所述氮化物势垒层包括第一氮化 物层和第二氮化物层， 该第二氮化物层含有硅； Bottom epitaxial process: A nitride nucleation layer, a nitride buffer layer, a gallium nitride channel layer, a nitride barrier layer and a dielectric passivation layer are sequentially formed on the bottom, where: the nitride barrier layer includes a first nitride layer and a second nitride layer, the second nitride layer containing silicon;
栅极工艺： 在所述介质钝化层上定义栅极区， 对所述栅极区进行刻蚀， 使 栅极区贯穿整个介质钝化层，对栅极区中暴露出来的氮化物势垒层进行氧化处 理形成氧化物和 /或氮氧化物， 在该栅极区中沉积金属形成栅极； Gate process: Define a gate area on the dielectric passivation layer, etch the gate area so that the gate area penetrates the entire dielectric passivation layer, and create a barrier for the nitride exposed in the gate area. The layer is oxidized to form oxide and/or oxynitride, and metal is deposited in the gate region to form a gate;
源极和漏极工艺： 在所述介质钝化层上定义源极区和漏极区，对所述源极 区和漏极区进行刻蚀，使源极区和漏极区贯穿整个介质钝化层，在所述源极区 和漏极区中沉积金属形成源极和漏极，使源极和漏极与所述氮化物势垒层形成 欧姆接触。 Source and drain processes: Define a source region and a drain region on the dielectric passivation layer, and etch the source region and the drain region so that the source region and the drain region penetrate the entire dielectric passivation layer. nitride layer, deposit metal in the source region and drain region to form source electrodes and drain electrodes, so that the source electrodes and drain electrodes form ohmic contact with the nitride barrier layer.
13、 如权利要求 12所述的射频器件的制作方法， 其特征在于： 所述第一
Figure imgf000015_0001
其中铝的组分 x>75%。 13. The method of manufacturing a radio frequency device according to claim 12, characterized in that: the first
Figure imgf000015_0001
The aluminum component x>75%.
14、 如权利要求 12所述的射频器件的制作方法， 其特征在于： 所述第二 氮化物层中的硅含量大于 1E/I8cm3。 14. The manufacturing method of a radio frequency device according to claim 12, characterized in that: the silicon content in the second nitride layer is greater than 1E/I8cm 3 .
15、 如权利要求 12所述的射频器件的制作方法， 其特征在于： 所述第二 氮化物层中的硅含量超过 0.1%, 使得该第二氮化物层变成含硅合金。 15. The manufacturing method of a radio frequency device according to claim 12, characterized in that: the silicon content in the second nitride layer exceeds 0.1%, so that the second nitride layer becomes a silicon-containing alloy.
16、 如权利要求 12所述的射频器件的制作方法， 其特征在于： 所述介质 钝化层包括位于该第二氮化物层上的第一介质钝化层和位于该第一介质钝化 层上的第二介质钝化层。 16. The method of manufacturing a radio frequency device according to claim 12, characterized in that: the medium The passivation layer includes a first dielectric passivation layer located on the second nitride layer and a second dielectric passivation layer located on the first dielectric passivation layer.
17、 如权利要求 16所述的射频器件的制作方法， 其特征在于： 所述第一 介质层和第二介质层为 SiN、 Si02、 SiAlN、 SiON、 A1203、 Hf02、 HfAlO中的 一种或者是其任意组合， 第二介质层的生长方式可以是 M0CVD、 ALD、 PECVD、 LPCVD、 MBE、 CVD、 GCIB中的一种。 17. The manufacturing method of a radio frequency device according to claim 16, characterized in that: the first dielectric layer and the second dielectric layer are SiN, Si02 , SiAlN, SiON, A1203 , Hf02 , HfAlO One or any combination thereof, the growth method of the second dielectric layer may be one of MOCVD, ALD, PECVD, LPCVD, MBE, CVD, and GCIB.
18、 如权利要求 12所述的射频器件的制作方法， 其特征在于： 所述氧化 处理形成的氧化物和 /或氮氧化物为该栅极区对应位置处的氮化物势垒层全部 或者部分。 18. The manufacturing method of a radio frequency device according to claim 12, characterized in that: the oxide and/or oxynitride formed by the oxidation treatment is all or part of the nitride barrier layer at the corresponding position of the gate region. .
19、 如权利要求 18所述的射频器件的制作方法， 其特征在于： 所述氧化 处理可以通过氧离子、 臭氧或热氧化方法中的一种进行处理， 生成的氧化物和 /或氮氧化物可以为 AlSiON、 AlSiO、 A10N、 A1203或者其任意组合。 19. The manufacturing method of a radio frequency device according to claim 18, characterized in that: the oxidation treatment can be carried out by one of oxygen ions, ozone or thermal oxidation methods, and the generated oxides and/or nitrogen oxides It can be AlSiON, AlSiO, A10N, A1 2 0 3 or any combination thereof.
20、 如权利要求 12所述的射频器件的制作方法， 其特征在于： 所述栅极 工艺在刻蚀完介质钝化层之后， 进一步包括在整个器件表面沉积第三介质层。 20. The method of manufacturing a radio frequency device according to claim 12, wherein: after etching the dielectric passivation layer, the gate process further includes depositing a third dielectric layer on the entire device surface.
21、 如权利要求 20所述的射频器件的制作方法， 其特征在于： 所述第三 介质层的材质可以是三氧化二铝、 氮氧化铝、 氧化铪、 氧化铪铝、 氮化硅、 硅 铝氮、 氧化硅、 氮氧化硅中的一种或其任意组合， 沉积的方法为 PECVD、 LPCVD、 MBE、 CVD、 ALD、 MOCVD或 PVD中的一种。 21. The method of manufacturing a radio frequency device according to claim 20, characterized in that: the material of the third dielectric layer can be aluminum oxide, aluminum oxynitride, hafnium oxide, hafnium aluminum oxide, silicon nitride, silicon One or any combination of aluminum nitride, silicon oxide, silicon oxynitride, the deposition method is one of PECVD, LPCVD, MBE, CVD, ALD, MOCVD or PVD.
22、 如权利要求 12所述的射频器件的制作方法， 其特征在于： 所述栅极 工艺和所述源极和漏极工艺的次序可以互换。 22. The manufacturing method of a radio frequency device according to claim 12, characterized in that: the order of the gate process and the source and drain processes can be interchanged.
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