WO2013180503A1 - 유기발광소자 - Google Patents
유기발광소자 Download PDFInfo
- Publication number
- WO2013180503A1 WO2013180503A1 PCT/KR2013/004787 KR2013004787W WO2013180503A1 WO 2013180503 A1 WO2013180503 A1 WO 2013180503A1 KR 2013004787 W KR2013004787 W KR 2013004787W WO 2013180503 A1 WO2013180503 A1 WO 2013180503A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- layer
- electron transport
- transport layer
- organic light
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000002019 doping agent Substances 0.000 claims abstract description 27
- 150000003839 salts Chemical class 0.000 claims abstract description 22
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 18
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 77
- 150000001875 compounds Chemical class 0.000 claims description 32
- 125000002524 organometallic group Chemical group 0.000 claims description 27
- 150000002894 organic compounds Chemical class 0.000 claims description 19
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 13
- -1 SrF 2 Inorganic materials 0.000 claims description 12
- 238000000149 argon plasma sintering Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 125000003118 aryl group Chemical group 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 8
- 125000001424 substituent group Chemical group 0.000 claims description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 6
- 125000004429 atom Chemical group 0.000 claims description 6
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 5
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 4
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 125000005842 heteroatom Chemical group 0.000 claims description 4
- 238000004770 highest occupied molecular orbital Methods 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 claims description 4
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 150000002736 metal compounds Chemical class 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052693 Europium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052776 Thorium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 229910052730 francium Inorganic materials 0.000 claims description 3
- 125000000524 functional group Chemical group 0.000 claims description 3
- 230000005525 hole transport Effects 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 229910052701 rubidium Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 125000004642 (C1-C12) alkoxy group Chemical group 0.000 claims description 2
- 125000006710 (C2-C12) alkenyl group Chemical group 0.000 claims description 2
- FZTBAQBBLSYHJZ-UHFFFAOYSA-N 2-phenyl-1,3-oxazol-4-ol Chemical compound OC1=COC(C=2C=CC=CC=2)=N1 FZTBAQBBLSYHJZ-UHFFFAOYSA-N 0.000 claims description 2
- CCMLIFHRMDXEBM-UHFFFAOYSA-N 2-phenyl-1,3-thiazol-4-ol Chemical compound OC1=CSC(C=2C=CC=CC=2)=N1 CCMLIFHRMDXEBM-UHFFFAOYSA-N 0.000 claims description 2
- HJJXCBIOYBUVBH-UHFFFAOYSA-N 2-phenyl-1h-benzimidazol-4-ol Chemical compound N1C=2C(O)=CC=CC=2N=C1C1=CC=CC=C1 HJJXCBIOYBUVBH-UHFFFAOYSA-N 0.000 claims description 2
- VHRHRMPFHJXSNR-UHFFFAOYSA-N 2-phenylpyridin-3-ol Chemical compound OC1=CC=CN=C1C1=CC=CC=C1 VHRHRMPFHJXSNR-UHFFFAOYSA-N 0.000 claims description 2
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 claims description 2
- 229910016036 BaF 2 Inorganic materials 0.000 claims description 2
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 claims description 2
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 2
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 claims description 2
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 claims description 2
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 claims description 2
- XIVOUNPJCNJBPR-UHFFFAOYSA-N acridin-1-ol Chemical compound C1=CC=C2C=C3C(O)=CC=CC3=NC2=C1 XIVOUNPJCNJBPR-UHFFFAOYSA-N 0.000 claims description 2
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 claims description 2
- 150000001408 amides Chemical class 0.000 claims description 2
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- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000000623 heterocyclic group Chemical group 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 claims description 2
- 125000002883 imidazolyl group Chemical group 0.000 claims description 2
- 239000003446 ligand Substances 0.000 claims description 2
- 150000002825 nitriles Chemical class 0.000 claims description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 2
- 125000002971 oxazolyl group Chemical group 0.000 claims description 2
- KELCFVWDYYCEOQ-UHFFFAOYSA-N phenanthridin-1-ol Chemical compound C1=CC=CC2=C3C(O)=CC=CC3=NC=C21 KELCFVWDYYCEOQ-UHFFFAOYSA-N 0.000 claims description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000004032 porphyrins Chemical class 0.000 claims description 2
- LISFMEBWQUVKPJ-UHFFFAOYSA-N quinolin-2-ol Chemical group C1=CC=C2NC(=O)C=CC2=C1 LISFMEBWQUVKPJ-UHFFFAOYSA-N 0.000 claims description 2
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 claims description 2
- 239000011780 sodium chloride Substances 0.000 claims description 2
- 229940124530 sulfonamide Drugs 0.000 claims description 2
- 150000003456 sulfonamides Chemical class 0.000 claims description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 2
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims description 2
- 150000003462 sulfoxides Chemical class 0.000 claims description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 2
- UIWLITBBFICQKW-UHFFFAOYSA-N 1h-benzo[h]quinolin-2-one Chemical compound C1=CC=C2C3=NC(O)=CC=C3C=CC2=C1 UIWLITBBFICQKW-UHFFFAOYSA-N 0.000 claims 1
- 150000004678 hydrides Chemical class 0.000 claims 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 373
- 230000000052 comparative effect Effects 0.000 description 28
- 239000011575 calcium Substances 0.000 description 14
- 239000011368 organic material Substances 0.000 description 12
- 0 CC(C(C(C(F)=C1C(C2=CCCC=C22)=C(C=CC=C3)C3=C2C2=CC*C(CCC=C3)C3=C2)F)F)=C1[F+] Chemical compound CC(C(C(C(F)=C1C(C2=CCCC=C22)=C(C=CC=C3)C3=C2C2=CC*C(CCC=C3)C3=C2)F)F)=C1[F+] 0.000 description 10
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
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- 150000004945 aromatic hydrocarbons Chemical group 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
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- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 1
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- YRYHHSFFVJQAHE-UHFFFAOYSA-N Ic(cc1)cc2c1-c1nc(cccc3)c3[n]1C1C=CC=CC21 Chemical compound Ic(cc1)cc2c1-c1nc(cccc3)c3[n]1C1C=CC=CC21 YRYHHSFFVJQAHE-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
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- YDZAMEPMKJLUDY-UHFFFAOYSA-N [O-][N+](c(nc(c(nc1[N+]([O-])=O)c(c(nc2[N+]([O-])=O)c3nc2[N+]([O-])=O)nc1[N+]([O-])=O)c3n1)c1[N+]([O-])=O)=O Chemical compound [O-][N+](c(nc(c(nc1[N+]([O-])=O)c(c(nc2[N+]([O-])=O)c3nc2[N+]([O-])=O)nc1[N+]([O-])=O)c3n1)c1[N+]([O-])=O)=O YDZAMEPMKJLUDY-UHFFFAOYSA-N 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
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- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
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- CHVJITGCYZJHLR-UHFFFAOYSA-N cyclohepta-1,3,5-triene Chemical compound C1C=CC=CC=C1 CHVJITGCYZJHLR-UHFFFAOYSA-N 0.000 description 1
- 125000006575 electron-withdrawing group Chemical group 0.000 description 1
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- 230000005283 ground state Effects 0.000 description 1
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- 238000005286 illumination Methods 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 125000004957 naphthylene group Chemical group 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
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- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
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- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
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- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
- H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/166—Electron transporting layers comprising a multilayered structure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
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Definitions
- the present specification relates to an organic light emitting device. More specifically, the present disclosure relates to an organic light emitting device comprising two or more light emitting units.
- An organic light emitting diode is usually composed of two electrodes (anode and cathode) and one or more organic material layers positioned between these electrodes.
- OLED organic light emitting diode
- the organic light emitting device generates visible light.
- An organic light emitting device may be used to manufacture an information display device or an illumination device.
- the present application describes an organic light emitting device comprising two or more light emitting units.
- the organic light emitting device includes a first electrode; Second electrode; And at least two light emitting units provided between the first electrode and the second electrode.
- a charge generating layer is provided between two light emitting units adjacent to each other of the light emitting units, and is located between the light emitting unit and the charge generating layer located closer to the first electrode of the two light emitting units adjacent to each other.
- An electron transport layer wherein the electron transport layer comprises: a first electron transport layer doped by an n-type dopant; And a second electron transport layer doped with a metal salt, metal oxide, or organometallic salt.
- an additional electron transport layer is provided between the light emitting unit adjacent to the second electrode and the second electrode, the additional electron transport layer is formed by an n-type dopant A doped first electron transport layer; And a second electron transport layer doped with a metal salt, metal oxide, or organometallic salt.
- an additional electron transport layer is provided between the light emitting unit adjacent to the second electrode and the second electrode, the additional electron transport layer is formed by an n-type dopant A doped first electron transport layer; And a second electron transport layer doped with a metal salt, metal oxide, or organometallic salt.
- an additional charge generating layer is provided between the second electrode and the additional electron transport layer.
- Embodiments according to the present disclosure can provide an organic light emitting device that not only improves the luminous efficiency compared to the conventional organic light emitting device, the driving voltage is greatly reduced, the luminous efficiency is excellent, and has a long life.
- FIG. 1 illustrates a laminated structure of an organic light emitting device according to an exemplary embodiment of the present specification.
- FIG. 2 illustrates a structure of a charge generating layer included in an organic light emitting diode according to an exemplary embodiment of the present specification.
- FIG. 3 schematically shows the flow of charge in the device shown in FIG.
- FIG. 4 illustrates a laminated structure of a general organic light emitting diode.
- FIG. 5 schematically shows the flow of charge in the device shown in FIG. 4.
- FIG. 6 illustrates a laminated structure of an organic light emitting device according to another exemplary embodiment of the present specification.
- FIG. 7 illustrates a laminated structure of an organic light emitting diode according to another exemplary embodiment of the present specification.
- FIG. 8 illustrates a laminated structure of an organic light emitting diode according to another exemplary embodiment of the present specification.
- FIG 9 illustrates a laminated structure of an organic light emitting device according to another exemplary embodiment of the present specification.
- n-type means n-type semiconductor characteristics.
- n-type is a property of receiving or transporting electrons through a low unoccupied molecular orbital (LUMO) energy level, which can be defined as a property of a material in which electron mobility is greater than hole mobility.
- p-type means p-type semiconductor characteristics.
- p-type is a property of injecting or transporting holes through a high occupied molecular orbital (HOMO) energy level, which may be defined as a property of a material in which the hole mobility is greater than the electron mobility.
- the compound or organic compound layer having n-type characteristics may be referred to as an n-type compound or n-type organic compound layer.
- the compound or organic compound layer having a p-type characteristic may be referred to as a p-type compound or p-type organic compound layer.
- n-type doping means that it is doped to have n-type characteristics.
- FIG. 1 illustrates a stacked structure of an organic light emitting diode according to an exemplary embodiment described in the present specification
- FIG. 3 illustrates a flow of electric charges in the organic light emitting diode illustrated in FIG. 1.
- two light emitting units 210 and 220 are positioned between the first electrode 110 and the second electrode 120, and two light emitting units 210 and 220 are positioned.
- a charge generating layer 510 and an electron transport layer consisting of two layers are positioned between the light emitting units 210 and 220.
- the charge generation layer 510 is positioned adjacent to the light emitting unit 220 adjacent to the second electrode 120
- the electron transport layer is positioned adjacent to the light emitting unit 210 adjacent to the first electrode 110.
- the electron transport layer includes a first electron transport layer 310 doped with an n-type dopant and a second electron transport layer 410 doped with a metal salt, metal oxide, or organometallic salt, and the first electron transport layer 310 is charged.
- the light emitting unit 510 is positioned adjacent to the generation layer 510, and the second electron transport layer 410 is positioned adjacent to the light emitting unit 210 adjacent to the first electrode 110.
- two light emitting units 210 and 220 are provided between the first electrode 110 and the second electrode 120.
- the charge generation layer 510 is provided between the two light emitting units 210 and 220.
- the first electron transport layer 310 and the second electron transport layer 410 are provided between the light emitting unit 210 and the charge generating layer 510 positioned closer to the first electrode of the light emitting units.
- 1 illustrates a light emitting unit 210, a second electron transport layer 410, a first electron transport layer 310, a charge generating layer 510, a light emitting unit 220, and a second electrode on a first electrode 110.
- the light emitting unit 220, the charge generating layer 510, the first electron transport layer 310, the second electron transport layer 410, and the light emitting unit are disposed on the second electrode 120.
- a structure in which the 210 and the first electrode 110 are stacked is also included.
- the term “adjacent” means an arrangement relationship of the nearest layers among the layers mentioned as adjacent.
- two adjacent light emitting units mean an arrangement relationship of two light emitting units disposed closest among the plurality of light emitting units.
- the adjacency may mean a case where two layers are in physical contact with each other in some cases, and another layer not mentioned between the two layers may be disposed.
- the light emitting unit adjacent to the second electrode means a light emitting unit disposed closest to the second electrode among the light emitting units.
- the second electrode and the light emitting unit may be physically in contact with each other, a layer other than the light emitting unit may be disposed between the second electrode and the light emitting unit.
- a charge generating layer is provided between two adjacent light emitting units.
- the first electrode and the second electrode are for applying an external voltage, and are not particularly limited as long as they have conductivity.
- the first electrode may be an anode
- the second electrode may be a cathode.
- the light emitting units 210 and 220 are not particularly limited as long as they have a function of emitting light.
- the light emitting units 210 and 220 may include one or more light emitting layers. If necessary, the light emitting units 210 and 220 may include one or more organic material layers other than the light emitting layer.
- the emission layer may include a material capable of emitting light in the visible region by transporting and bonding holes and electrons, respectively.
- a material known in the art may be used as the material of the light emitting layer.
- a material having a good quantum efficiency with respect to fluorescence or phosphorescence may be used as the light emitting layer material.
- the light emitting layer material examples include 8-hydroxy-quinoline aluminum complex (Alq 3 ); Carbazole series compounds; Dimerized styryl compounds; BAlq; 10-hydroxybenzoquinoline-metal compound; Benzoxazole, benzthiazole and benzimidazole series compounds; Poly (p-phenylenevinylene) (PPV) -based polymers; Spiro compounds; Polyfluorene; And rubrene and the like, but are not limited thereto.
- Alq 3 8-hydroxy-quinoline aluminum complex
- Carbazole series compounds Dimerized styryl compounds
- BAlq 10-hydroxybenzoquinoline-metal compound
- Benzoxazole, benzthiazole and benzimidazole series compounds examples include Poly (p-phenylenevinylene) (PPV) -based polymers; Spiro compounds; Polyfluorene; And rubrene and the like, but are not limited thereto.
- the light emitting units 210 and 220 may further include one or more organic material layers in addition to the light emitting layer.
- the additional organic layer may be a hole transport layer, a hole injection layer, a layer for transporting and injecting holes, a buffer layer, an electron blocking layer, an electron transporting layer, an electron injection layer, a layer for transporting and injecting electrons, a hole blocking layer, and the like.
- the hole transport layer, the hole injection layer, the layer for transporting and injecting holes or the electron blocking layer may be disposed closer to the first electrode 110 than the light emitting layer.
- the electron transport layer, the electron injection layer, the layer for transporting and injecting electrons or the hole blocking layer may be disposed closer to the second electrode 120 than the light emitting layer.
- Whether to use the hole blocking layer may be determined depending on the nature of the light emitting layer. For example, when the property of the light emitting layer is close to n type, the hole blocking layer may not be used. However, when the property of the light emitting layer is p type, the use of the hole blocking layer may be considered. In addition, in consideration of the relationship between the HOMO energy level of the light emitting layer and the HOMO energy level of the electron transport layer, it may be determined whether to use the hole blocking layer. When the HOMO energy level of the light emitting layer has a larger value than the HOMO energy level of the electron transport layer, introduction of a hole blocking layer may be considered.
- the electron transport layer when the HOMO level of the electron transport layer is greater than the HOMO level of the light emitting layer, the electron transport layer itself may serve as a hole blocking layer. As one example, by using two or more materials of the electron transport layer may play a role of the electron transport layer and the hole blocking layer at the same time.
- the charge generating layer 510 is a layer that generates charge without applying an external voltage, and generates two or more light emitting units included in the organic light emitting device by generating a charge between the light emitting units 210 and 220. Allow to emit light.
- the charge generation layer 510 may include an n-type organic compound layer and a p-type organic compound layer.
- the n-type organic compound layer (hereinafter referred to as "n-type charge generation layer”) of the charge generation layer 510 is compared to the p-type organic compound layer (hereinafter referred to as "p-type charge generation layer") of the charge generation layer 510. It is disposed closer to the first electrode 110.
- 2 shows an example of a charge generating layer. 2 shows a charge generation layer including an n-type charge generation layer 512 disposed closer to the first electrode 110 and a p-type charge generation layer 511 disposed closer to the second electrode 120. It is.
- the LUMO energy level of the n-type charge generation layer 512 has a value equal to or greater than the HOMO energy level of the p-type charge generation layer 511, which is more effective in charge generation.
- the LUMO energy level of the n-type charge generation layer 512 may be 5-7 eV, and the HOMO energy level of the p-type charge generation layer 511 may be 5 eV or more.
- the energy level means the magnitude of energy. Therefore, even when the energy level is displayed in the negative (-) direction from the vacuum level, the energy level is interpreted to mean the absolute value of the corresponding energy value.
- the HOMO energy level means the distance from the vacuum level to the highest occupied molecular orbital.
- the LUMO energy level means the distance from the vacuum level to the lowest unoccupied molecular orbital.
- An electric charge can be generated by forming an NP junction between the n-type charge generation layer 512 and the p-type charge generation layer 511.
- the LUMO energy level of the n-type charge generation layer 512 and the HOMO energy level of the p-type charge generation layer 511 may be adjusted in consideration of the energy level relationship between neighboring organic material layers. For example, in the n-type charge generation layer 512 and the p-type charge generation layer 511, the HOMO energy level of the p-type charge generation layer 511 is compared with the LUMO energy level of the n-type charge generation layer 512. The difference can be adjusted to be 2 eV or less, or 1 eV or less. Judging from the energy levels of commercially available materials, the difference in energy levels may be -1 eV or more and 1 eV or less, or 0.01 eV or more and 1 eV or less.
- NP junctions may be easily generated to prevent the driving voltage from increasing.
- NP junction may occur when the n-type organic compound layer 512 and the p-type organic compound layer 511 are not only in physical contact but also satisfy the above-described energy relationship.
- the NP junction When the NP junction is formed, holes or electrons are easily formed by an external voltage or a light source. That is, holes and electrons are simultaneously generated between the n-type charge generation layer 512 and the p-type charge generation layer 511 by the NP junction. Electrons are transported toward the first electron transport layer 310 and the second electron transport layer 410 through the n-type charge generation layer 512. Holes are transported toward the p-type charge generating layer 511. That is, when the LUMO energy level of the n-type charge generation layer 512 is greater than the HOMO energy level of the p-type charge generation layer 511, holes or electrons are easily generated, and the driving voltage for hole injection can be prevented from rising. have.
- the HOMO energy level of the p-type charge generation layer 511 may be 5eV or more. When 5 eV or more, hole injection into adjacent light emitting units can be effectively performed.
- An aryl amine compound may be used as the material of the p-type charge generating layer 511.
- One example of the arylamine-based compound is a compound of the formula (1).
- Ar 1 , Ar 2 and Ar 3 are each independently hydrogen or a hydrocarbon group. At this time, at least one of Ar 1 , Ar 2 and Ar 3 may include an aromatic hydrocarbon substituent, each substituent may be the same, or may be composed of different substituents.
- the non-aromatic hydrocarbons are hydrogen; Straight, branched or cyclic aliphatic hydrocarbons; It may be a heterocyclic group including N, O, S or Se.
- Chemical Formula 1 include the following chemical formulas, but the scope of the embodiments described herein is not necessarily limited thereto.
- the n-type charge generation layer 512 may be made of only organic material. In another embodiment, the n-type charge generation layer 512 may further include transition metal oxides such as MoO 3 , V 2 O 7 , and ReO 3 . In another embodiment, the n-type charge generation layer 512 may include an n-type dopant. In this case, the n-type dopant may be organic or inorganic.
- the n-type dopant when the n-type dopant is inorganic, an alkali metal such as Li, Na, K, Rb, Cs or Fr; Alkaline earth metals such as Be, Mg, Ca, Sr, Ba or Ra; Rare earth metals such as La, Ce, Pr, Nd, Sm, Eu, Tb, Th, Dy, Ho, Er, Em, Gd, Yb, Lu, Y or Mn; Or a metal compound including at least one of the above metals.
- the n-type dopant may be a substance containing a cyclopentadiene, cycloheptatriene, a 6 membered hetero ring or a condensed ring containing these rings. At this time, the doping concentration may be 0.01 to 50% by weight, or 1 to 10% by weight. Within the doping concentration, a decrease in efficiency due to light absorption can be prevented.
- the n-type charge generating layer 512 may include a compound of Formula 2 below.
- a 1 to A 6 are each hydrogen, a halogen atom, nitrile (-CN), nitro (-NO 2), sulfonyl (-SO 2 R), sulfoxide (-SOR), sulfonamide ( -SO 2 NR), sulfonate (-SO 3 R), trifluoromethyl (-CF 3 ), ester (-COOR), amide (-CONHR or -CONRR '), substituted or unsubstituted straight or branched chain C 1 -C 12 alkoxy, substituted or unsubstituted straight or branched chain C 1 -C 12 alkyl, substituted or unsubstituted linear or branched C 2 -C 12 alkenyl, substituted or unsubstituted aromatic or Non-aromatic hetero rings, substituted or unsubstituted aryl, substituted or unsubstituted mono- or di-arylamines, substituted or unsubstituted a
- Exemplary compounds of the compound of Formula 2 include compounds of the following Formulas 2-1 to 2-6.
- the n-type charge generation layer 512 may be composed of only one layer or may include two or more layers. In the case of two or more layers, they may be formed of the same material or may be formed of different materials.
- the n-type charge generation layer 512 may have a structure in which a layer made of the compound of Formula 2 and a layer doped with the compound of Formula 2 by an n-type dopant are stacked.
- the n-type charge generation layer 512 may have a stacked structure of an inorganic material layer and an organic material layer.
- the n-type charge generating layer 512 may be a layer consisting of a MoO 3 layer and the compound of Formula 2.
- the n-type charge generating layer When the n-type charge generating layer is composed of two or more layers, the n-type charge generating layer may be stacked according to the LUMO energy level value. Specifically, when a layer is first formed using a material having a high LUMO energy level, the energy barrier between the two materials can be reduced, and thus the electrons can be smoothly moved. As a result, an increase in the driving voltage can be prevented. For example, since the LUMO level of MoO 3 is about 6.7 eV and the LUMO level of the compound of Formula 2-1 is 5.7 eV, the MoO 3 layer may be formed first.
- the electron transport layer may include a first electron transport layer 310 and a second electron transport layer 410.
- the first electron transport layer 310 is doped with an n-type dopant.
- the first electron transport layer 310 serves to effectively match the Fermi level with the charge generation layer 510 by doping the n-type dopant . Accordingly, the first electron transport layer 310 may improve electron injection characteristics by lowering an energy barrier for electron injection from the charge generation layer 510.
- the LUMO energy level of the n-type doped first electron transport layer is characterized in that the LUMO energy level of the n-type charge generation layer is closer to the Fermi energy level (E f ) than the undoped electron transport layer. Thus, the energy barrier between the two layers becomes small, which may improve the electron injection characteristics (J. Mater. Chem., 2011, 21, 17476-17482).
- the LUMO energy level of the first electron transport layer 310 may be 5 eV or less from the LUMO energy level of the n-type charge generation layer 512 adjacent thereto.
- the n-type dopant included in the first electron transport layer 310 may be an alkali metal such as Li, Na, K, Rb, Cs or Fr; Alkaline earth metals such as Be, Mg, Ca, Sr, Ba or Ra; Rare earth metals such as La, Ce, Pr, Nd, Sm, Eu, Tb, Th, Dy, Ho, Er, Em, Gd, Yb, Lu, Y or Mn; Alternatively, a metal compound including at least one of the above metals may be used.
- the n-type dopant may be 1 to 50% by weight based on the total weight of the material of the first electron transport layer 310.
- a method of doping an n-type dopant may use a method known in the art, and the scope of the present invention is not limited by a specific method.
- the thickness of the first electron transport layer 310 may be 50 to 100 ohms.
- the thickness of the first electron transport layer 310 including the n-type dopant is 100 ohms or less, a decrease in luminous efficiency due to absorption of visible light may be prevented.
- the organic light emitting device also includes a second electron transport layer 410 doped with at least one selected from a metal salt, a metal oxide, and an organometallic salt.
- Metal salts include halides of alkali or alkaline earth metals, such as LiF, NaF, KF, RbF, CsF, MgF 2 , CaF 2 , SrF 2 , BaF 2 , LiCl, NaCl, KCl, RbCl, CsCl, MgCl 2 , CaCl 2 , SrCl 2 , BaCl 2 and the like can be used.
- an alkali metal or an oxide of an alkali metal such as LiO 2 , NaO 2 , BrO 2 , Cs 2 O, MgO, CaO, or the like may be used.
- an organometallic salt Liq, Naq, Kq, etc. of Formula 3 may be used.
- the thickness of the second electron transport layer 410 may be 50 to 500 ohms strong, more specifically 50 to 200 ohms strong. When the thickness is within the above range, it is possible to effectively prevent the driving voltage rise.
- the metal salt, metal oxide, or organometallic salt may be 1 to 99% by weight, specifically 10 to 50% by weight, based on the total weight of the material of the second electron transport layer 410.
- the second electron transport layer 410 is a light emitting unit in which electrons transported through the charge generation layer 510 and the first electron transport layer 310 are adjacent to the first electrode 110 by doping with a metal salt, a metal oxide, or an organometallic salt. Moving to 210 can be made smooth. In addition, the second electron transport layer 410 prevents holes from moving from the light emitting unit 210 to the charge generating layer 510 through the first electron transport layer 310, thereby improving the luminous efficiency and driving voltage. Can be greatly reduced, it is possible to implement a long life device.
- the efficient luminous efficiency as described above cannot be obtained.
- the organic light emitting diode includes one electron transport layer instead of two electron transport layers having different characteristics, holes flowing through the light emitting unit without participating in light emission may occur. Can be.
- the organic light emitting device includes two light emitting units 21 and 22 between the first electrode 11 and the second electrode 12, and between the light emitting units 21 and 22, respectively.
- the case where the charge generation layer 51 is formed in the side can be considered. In this case, since the hole flows from the electron transport layer 31 toward the charge generating layer 51 as shown in FIG. 5, holes flowing in the light emitting unit 21 without participating in light emission are generated. The efficiency of may be lowered.
- the electron transport layer 31 even when an n-type doped electron transport layer doped with an n-type dopant such as Ca is used, the efficiency of the device is not high, the driving voltage is increased, and the driving life of the device is shortened. We have found that this occurs.
- the second electron transport layer 410 doped with at least one selected from a metal salt, a metal oxide, and an organometallic salt is formed from the light emitting unit 210.
- the transported hole serves to prevent the transported hole from being transported to the charge generation layer 510 through the first electron transport layer 310 doped by the n-type dopant.
- electrons injected from the charge generation layer 510 may be effectively raised to the LUMO energy level of the first electron transport layer 310 doped by the n-type dopant.
- the electrons can be easily moved to the light emitting unit 210.
- the efficiency of the device not only can the efficiency of the device be greatly increased, but the driving voltage can be greatly reduced, and the driving life of the device can be improved. If holes are not properly blocked from the light emitting layer and pass through the hole generating layer, electrons are easily injected from the hole generating layer to the first electron transport layer, from the first electron transport layer to the second electron transport layer, and from the second electron transport layer to the light emitting layer. You will not. In this case, more energy is required to inject electrons to the light emitting layer, which may be indicated by an increase in driving voltage. If the electron injection is not easy, it may lead to charge imbalance of the device and affect the device life.
- the second electron transport layer 410 may contribute to improving the electron injection ability of the adjacent first electron transport layer 310.
- the doped organic material that is, the host material of the first electron transport layer 310 and the second electron transport layer 410
- an organic material that may play an electron transport role may be used as the doped organic material.
- the same material may be used as the host material of the first electron transport layer and the second electron transport layer, and different materials may be used.
- an organic material or an organometallic complex may be used as a host material of the first and second electron transport layers 310 and 410 that may be used in one embodiment.
- an electron transport material of hydrocarbons for example, an electron transport material having an n-type substituent in an anthracene core, an electron transport material having an n-type substituent in a bianthracene core, or an organometallic complex described below may be used.
- the n-type substituent means an electron withdrawing group, and for example, a ring compound containing a hetero atom such as N, O, or S in the ring, -F, -Br, _Cl, -I, -CN, etc. And a ring compound in which a functional group or the like is substituted.
- Materials having a small HOMO energy level may be used as host materials of the first and second electron transport layers 310 and 410 that may be used in other embodiments.
- the HOMO energy levels of the host materials of the first and second electron transport layers 310 and 410 may be smaller than the HOMO energy levels of the organic material layer of the light emitting unit 210 in contact with the second electron transport layer 410.
- the HOMO energy level of the host material of the first and second electron transport layers 310 and 410 is higher than the HOMO energy level of the organic material layer of the light emitting unit 210 in contact with the second electron transport layer 410. Can be effective.
- a compound having a functional group selected from imidazole group, oxazole group, thiazole group, quinoline group and phenanthrosine group can be used as the host material.
- an organometallic complex compound containing at least one of alkali metal ions, alkaline earth metal ions, and rare earth metal ions may be used as the host material, and as ligands of the organometallic complex, quinolinol and benzoquinoli Nol, acridinol, phenanthridinol, hydroxyphenyloxazole, hydroxyphenylthiazole, hydroxydiaryloxadiazole, hydroxydiarylthiadiazole, hydroxyphenylpyridine, hydroxyphenylbenzoimidazole, Hydroxybenzotriazole, hydroxyfluborane, bipyridyl, phenanthroline, phthalocyanine, porphyrin, cyclopentadiene, ⁇ -d
- a compound of the following structural formula may be used as the host material.
- Ar is an aryl group, for example, may be a substituent represented by the following formula,
- Examples of X include the following formulas.
- R1 to R5 may each include an alkyl group such as methyl, ethyl, propyl, butyl, and the like, and may form an electron-withdrawing atom such as -F, -Cl, -Br, -I, -CN, or the like. It may be a group containing.
- R1 'to R5' are each groups containing electron-withdrawing atoms, and examples thereof include -F, -Cl, -Br, -I, -CN, and the like.
- a compound of the following formula may be used as the first electron transport layer material.
- R and R ' are each C 1 ⁇ C 20 Alkyl group or C 6 ⁇ C 20 aryl group
- Y is an arylene group such as phenylene, naphthylene and the like.
- the compounds of the formula include compounds of the formula
- the second electron transport layer material include the following compounds, but are not intended to be limited thereto.
- the first electron transport layer may be formed of the same material as the material of the second electron transport layer described above, and may further include a compound of the following formula.
- X is represented by the following formula.
- R1 to R5 may each include an alkyl group such as methyl, ethyl, propyl, butyl, and the like, and may include an electron-withdrawing atom such as -F, -Cl, -Br, -I, -CN, or the like. Can be.
- FIG. 1 illustrates a case in which only two light emitting units 210 and 220 are provided between the first electrode 110 and the second electrode 120, but according to another embodiment of the present specification, the first electrode ( Three or more light emitting units may be provided between the 110 and the second electrode 120. The case where three or more light emitting units are provided is illustrated in FIG. 6.
- 6 illustrates a lamination structure of an organic light emitting diode including n light emitting units.
- the first electron transport layer 420 and the charge generation layer 520 are stacked, the light emitting unit, the second electron transport layer, the first electron transport layer, and the charge generation layer may be repeatedly stacked in this order.
- the n ⁇ 1 th light emitting unit, the second electron transport layer, the first electron transport layer, and the charge generating layer are stacked, and the n th light emitting unit and the second electrode 120 are stacked.
- 6 illustrates a structure in which the remaining layers are stacked on the first electrode, but on the contrary, a structure in which the remaining layers are stacked on the second electrode is also included.
- an additional electron transport layer is provided between the light emitting unit 220 and the second electrode 120 adjacent to the second electrode 120, the additional The electron transport layer includes a first electron transport layer 320 doped with an n-type dopant and a second electron transport layer 420 doped with a metal salt, a metal oxide or an organometallic salt.
- An example with such an additional electron transport layer is shown in FIG. 7.
- the above description of the first electron transport layer 310 and the second electron transport layer 410 may be applied to the first electron transport layer 320 and the second electron transport layer 420.
- an additional electron transport layer is provided between the light emitting unit 220 and the second electrode 120 adjacent to the second electrode 120, the additional The electron transport layer includes a first electron transport layer 320 doped with an n-type dopant and a second electron transport layer 420 doped with a metal salt, a metal oxide or an organometallic salt.
- an additional charge generating layer 520 is provided between the second electrode and the additional electron transport layer. An example having such an additional electron transport layer and an additional charge generating layer is shown in FIG. 8. The above description of the charge generation layer 510 may be applied to the charge generation layer 520.
- an additional charge generating layer 520 is provided between the light emitting unit 220 adjacent to the second electrode 120 and the second electrode 120. do.
- An example with such an additional charge generating layer is shown in FIG. 9.
- the above description about the charge generation layer 510 may be applied to the charge generation layer 520.
- the light emitting layer or the electron transport layer may be n-type doped.
- materials having various work functions may be used as the material of the second electrode 120.
- the organic light emitting device of the exemplary embodiment described in the present specification may be configured as a top emission type, a bottom emission type, or a double-sided emission type.
- the electrode through which light passes according to the light emitting direction may be configured to be transparent.
- Transparency is not particularly limited to light transmittance as long as light can pass therethrough, for example, light transmittance may be 70% or more.
- the transparent electrode may be made of a transparent material or may be formed so thin that the opaque material is transparent.
- the electrode material may include a material selected from the group consisting of metals, metal oxides and conductive polymers.
- the electrode materials include carbon, cesium, potassium, lithium, calcium, sodium, magnesium, nircium, indium, aluminum, silver, tantalum, vanadium, chromium, copper, zinc, iron, tungsten, molybdenum, nickel, gold, Other metals and alloys thereof; Zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO) and other similar metal oxides; And mixtures of oxides and metals such as ZnO: Al and SnO 2 : Sb. That is, the electrodes may not only be formed as metal electrode electrodes but also as transparent electrodes made of a transparent material such as a metal oxide.
- the material of the first electrode and the material of the second electrode may be the same or may be different as necessary.
- the organic light emitting diode according to the exemplary embodiment of the present specification may have a structure in which a first electrode is in contact with a substrate as an anode, and a second electrode is an electrode facing the first electrode as a cathode.
- An organic light emitting diode according to another exemplary embodiment of the present invention may have a structure in which a second electrode is in contact with a substrate as a cathode and the first electrode is an electrode facing the second electrode as an anode.
- the organic light emitting device may be a device including a light scattering structure.
- the organic light emitting diode further includes a substrate on a surface opposite to a surface on which the light emitting unit of the first electrode is provided, and between the substrate and the first electrode or provided with a first electrode. It may further include a light scattering layer on the surface facing the surface.
- an internal light scattering layer may be further included between the first electrode and the substrate provided on a surface of the first electrode opposite to the surface on which the light emitting unit is provided.
- the substrate may further include an external light scattering layer on a surface opposite to the surface on which the first electrode is provided.
- the internal light scattering layer or the external light scattering layer is not particularly limited as long as it can induce light scattering and improve the light scattering efficiency of the device.
- the light scattering layer may have a structure in which scattering particles are dispersed in a binder.
- the light scattering layer may use a film having irregularities.
- the light scattering layer may be formed directly on the substrate by a method such as spin coating, bar coating, slit coating, or the like by forming and attaching a film.
- the organic light emitting device is a flexible organic light emitting device.
- the substrate comprises a flexible material.
- a glass, plastic or film substrate in the form of a flexible thin film.
- films such as PET, PEN, and PI, can be used in the form of a single layer or a multilayer.
- a display device including the organic light emitting device is provided.
- a lighting apparatus including the organic light emitting device is provided.
- ITO was formed on the glass substrate by sputtering to form 1,500 GPa, and a HAT of Formula 2-1 was formed thereon to a thickness of 300 GPa by thermal vacuum deposition, and then 600 GPa using NPB. Layer was formed. A fluorescent blue light emitting layer was formed thereon at a thickness of 300 kPa, and the second electron transport layer was doped with 50 wt% of the following material 1 and LiF to form a 150 kW thick layer. The first electron transport layer was doped with Ca to 10 wt% to the following material 1 to form a 50 ⁇ thick layer.
- the charge generation layer was composed of a HAT layer 300 kHz and an NPB layer 300 kHz, and phosphorescent green and red light emitting layers were formed to a thickness of 300 kHz.
- the electron transport layer was formed to a thickness of 450 kW using the following material 2
- the cathode was composed of LiF 15 kW and aluminum 1000 mW to manufacture a white organic light emitting diode having a stacked structure.
- a device was manufactured in the same manner as in Example 1, except that the second electron transport layer was doped with Liq, which is an organometallic salt material, to 50 wt%.
- a device was manufactured in the same manner as in Example 1, except that the second electron transport layer was not formed of a metal salt or an organometallic salt, but was formed to have a thickness of 150 GPa using the material 1.
- Table 1 shows the results obtained by comparing the voltage and efficiency of Examples 1, 2 and Comparative Example 1 at 3 mA / cm 2 .
- a device was manufactured in the same manner as in Example 1, except that Material 2 was used instead of Material 1 in forming the second electron transport layer and the first electron transport layer.
- a device was fabricated in the same manner as in Example 3, except that the second electron transport layer was not doped with a metal salt or an organometallic salt, and was formed to a thickness of 150 Hz using the material 2.
- a device was fabricated in the same manner as in Example 3 except that the second electron transport layer was formed to a thickness of 200 GPa without forming the first electron transport layer.
- a device was fabricated in the same manner as in Example 3 except that the first electron transport layer was formed to a thickness of 200 GPa without forming the second electron transport layer.
- Table 2 shows the results of comparing the voltage and efficiency of Example 3 and Comparative Examples 2 to 4 in the 3 mA / cm 2 region.
- ITO was formed on the glass substrate by sputtering to form 1,500 GPa, and a HAT of Formula 2-1 was formed thereon to a thickness of 300 GPa by thermal vacuum deposition, and then 600 GPa using NPB. Layer was formed. A fluorescent blue light emitting layer was formed thereon at a thickness of 300 mW, and the second electron transport layer was doped with 50% by weight of the material 2 and LiF to form a 150 mW layer. The first electron transport layer was doped with Ca to 10 wt% on the material 2 to form a 50 ⁇ thick layer.
- the charge generation layer was composed of a HAT layer 300 kHz and an NPB layer 300 kHz, and phosphorescent green and red light emitting layers were formed to a thickness of 300 kHz.
- a second electron transport layer was formed to a thickness of 400 kPa by co-depositing LiF at 50 wt% on the material 2, and the first electron transport layer was doped with 10 wt% of Ca on the material 2 to a thickness of 50 kPa.
- the cathode was made of aluminum having a thickness of 1,000 ⁇ to produce a white organic light emitting device having a stacked structure.
- Example 4 The same constitution and method as in Example 4 except that the second electron transport layer and the first electron transport layer were not formed on the portion in contact with the charge generating layer, and the second electron transport layer and the first electron transport layer were formed only on the portion in contact with the cathode.
- the device was fabricated.
- Table 3 shows the results of comparing the voltage and efficiency of Example 4 and Comparative Example 5 measured in the 3 mA / cm 2 area.
- a device was manufactured in the same manner as in Example 1, except that the following material 5 was used instead of the material 1 when the second electron transport layer and the first electron transport layer were formed in contact with the charge generation layer.
- a device was manufactured in the same manner as in Example 1, except that the following material 7 was used instead of the material 1 when the second electron transport layer and the first electron transport layer were formed in contact with the charge generation layer.
- a device was manufactured in the same manner as in Example 1, except that the following material 9 was used instead of the material 1 when the second electron transport layer and the first electron transport layer were formed on the portion in contact with the charge generating layer.
- a device was manufactured in the same manner as in Example 1, except that the second electron transporting layer and the first electron transporting layer were formed using the following material 11 instead of the material 1 in the portion in contact with the charge generating layer.
- Table 4 shows the results of comparing the voltage and the efficiency of Examples 5 to 8 in the 3 mA / cm 2 region.
- Example 5 Example 6
- Example 7 Voltage (V) 5.6 5.6 5.6 5.5 Current efficiency (cd / A) 55 55 55 55 55
- a second electron transport layer was formed to a thickness of 150 kPa by co-depositing LiF to 50% by weight on the material 2, and 10% by weight of Ca on the material 13 below.
- a device was manufactured in the same manner as in Example 1, except that the film was doped with a film having a thickness of 50 Hz.
- Example 9 In the portion adjacent to the charge generating layer, a device was manufactured in the same manner as in Example 9 except that the Ca was doped at 5 wt% when the first electron transport layer was formed.
- Example 9 In the portion adjacent to the charge generating layer, a device was manufactured in the same manner as in Example 9 except that the Ca was doped at 2.5 wt% when the first electron transport layer was formed.
- the second electron transport layer does not contain a metal salt or an organometallic salt, and is formed to have a thickness of 150 GPa with only the material 2, and the first electron transport layer is 10% by weight of Ca in the material 13.
- a device was manufactured in the same manner as in Example 9, except that the film was doped with a film having a thickness of 50 Hz.
- a device was manufactured in the same manner as in Example 9, except that 10 wt% of Ca was doped into the second electron transport layer to form a 150 ⁇ thickness, and the same material as that of the material doped into the first electron transport layer.
- a device was manufactured in the same manner as in Example 9, except that 50 wt% of LiF, which is a metal salt, was formed on the first electron transport layer to have a thickness of 50 kV, and the same material as that doped in the second electron transport layer.
- 50 wt% of LiF which is a metal salt
- a device was fabricated in the same manner as in Example 9 except that the HAT which is the n-type charge generating layer in contact with the first electron transport layer was not configured.
- Table 5 shows the results obtained by comparing the voltages and the efficiency of Examples 9 to 11 and Comparative Examples 6 to 9 in the 3 mA / cm 2 region.
- the device doped with a metal salt or the like in the second electron transport layer has a lower initial voltage, a very small voltage increase during driving, and an improved driving life.
- a device comprising the same material doped in the second electron transport layer and the first electron transport layer is a device doped using Ca and LiF, respectively.
- Comparative Example 7 the efficiency of the device was drastically lowered because the doping layer of Ca was in contact with the light emitting layer, causing quenching of light emission.
- both the first electron transport layer and the second electron transport layer are doped with an n-type dopant, light absorption may increase.
- the metal is doped into the second electron transport layer in contact with the light emitting layer, the light emission efficiency may be reduced.
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Abstract
Description
실시예 1 | 실시예 2 | 비교예 1 | |
전압(V) | 6.3 | 6.3 | 7.3 |
전류효율(cd/A) | 48 | 50 | 45 |
실시예 3 | 비교예 2 | 비교예 3 | 비교예 4 | |
전압(V) | 5.6 | 6.3 | 15.0 | 6.5 |
전류효율(cd/A) | 55 | 52 | 43 | 40 |
실시예 4 | 비교예 5 | |
전압(V) | 5.6 | 15.0 |
전류효율(cd/A) | 52 | 40 |
실시예 5 | 실시예 6 | 실시예 7 | 실시예 8 | |
전압(V) | 5.6 | 5.6 | 5.6 | 5.5 |
전류효율(cd/A) | 55 | 55 | 55 | 55 |
전압(V) | 전류효율(cd/A) | |
실시예 9 | 5.6 | 55 |
실시예 10 | 5.6 | 58 |
실시예 11 | 5.5 | 60 |
비교예 6 | 5.8 | 55 |
비교예 7 | 6.0 | 30 |
비교예 8 | 14.0 | 44 |
비교예 9 | 16.0 | 42 |
Claims (34)
- 제1 전극; 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 2개 이상의 발광유닛을 포함하는 유기발광소자로서, 상기 발광유닛들 중 서로 인접하는 2개의 발광유닛들 사이에 전하발생층이 구비되고, 상기 서로 인접하는 2개의 발광유닛들 중 제1 전극에 더 가깝게 위치한 발광유닛과 상기 전하발생층 사이에 전자수송층이 구비되며, 상기 전자수송층은 n형 도펀트에 의하여 도핑된 제1 전자수송층; 및 금속염, 금속산화물 또는 유기금속염에 의하여 도핑된 제2 전자수송층을 포함하는 유기발광소자.
- 청구항 1에 있어서, 상기 제1 전자수송층은 상기 제2 전자수송층과 상기 전하발생층 사이에 구비되는 것인 유기발광소자.
- 청구항 1에 있어서, 상기 제2 전극에 인접한 발광유닛과 상기 제2 전극 사이에 추가의 전자수송층이 구비되고, 상기 추가의 전자수송층은 n형 도펀트에 의하여 도핑된 제1 전자수송층 및 금속염, 금속산화물 또는 유기금속염에 의하여 도핑된 제2 전자수송층을 포함하는 유기발광소자.
- 청구항 3에 있어서, 상기 제2 전극과 상기 추가의 전자수송층 사이에는 추가의 전하발생층이 구비된 유기발광소자.
- 청구항 1에 있어서, 상기 제2 전극에 인접한 발광유닛과 상기 제2 전극 사이에 추가의 전하발생층을 포함하는 유기발광소자.
- 청구항 1에 있어서, 상기 전하발생층은 n형 유기물층과 p형 유기물층을 포함하는 유기발광소자.
- 청구항 6에 있어서, 상기 전하발생층의 n형 유기물층의 LUMO 에너지 준위는 상기 전하발생층의 p형 유기물층의 HOMO 에너지 준위와 같거나 더 큰 값을 가지는 것인 유기발광소자.
- 청구항 6에 있어서, 상기 전하발생층의 p형 유기물층은 HOMO 에너지 준위가 상기 전하발생층의 n형 유기물층의 LUMO 에너지 준위와의 차가 2 eV 이하인 유기발광소자.
- 청구항 6에 있어서, 상기 전하발생층의 n형 유기물층의 LUMO 에너지 준위는 5eV ~ 7 eV인 유기발광소자.
- 청구항 6에 있어서, 상기 전하발생층의 p형 유기물층의 HOMO 에너지 준위는 5eV 이상인 것인 유기발광소자.
- 청구항 6에 있어서, 상기 전하발생층의 n형 유기물층은 하기 화학식 2의 화합물을 포함하는 것인 유기 발광 소자:[화학식 2]화학식 2에 있어서,A1 내지 A6은 각각 수소, 할로겐 원자, 니트릴(-CN), 니트로(-NO2), 술포닐(-SO2R), 술폭사이드(-SOR), 술폰아미드(-SO2NR), 술포네이트(-SO3R), 트리플루오로메틸(-CF3), 에스테르(-COOR), 아미드(-CONHR 또는 -CONRR'), 치환 또는 비치환된 직쇄 또는 분지쇄의 C1-C12 알콕시, 치환 또는 비치환된 직쇄 또는 분지쇄 C1-C12의 알킬, 치환 또는 비치환된 직쇄 또는 분지쇄의 C2-C12 알케닐, 치환 또는 비치환된 방향족 또는 비방향족의 헤테로 고리, 치환 또는 비치환된 아릴, 치환 또는 비치환된 모노- 또는 디-아릴아민, 또는 치환 또는 비치환된 아랄킬아민이고,R 및 R'는 각각 치환 또는 비치환된 C1-C60의 알킬, 치환 또는 비치환된 아릴 또는 치환 또는 비치환된 5원 내지 7원 헤테로 고리이다.
- 청구항 1에 있어서, 상기 제1 전자수송층의 n형 도펀트는 알칼리금속, 알칼리토금속, 희토류금속 및 금속화합물로 이루어진 군으로부터 선택되는 1종 이상을 포함하는 것인 유기발광소자.
- 청구항 1에 있어서, 상기 제1 전자수송층의 n형 도펀트는 Li, Na, K, Rb, Cs, Fr, Be, Mg, Ca, Sr, Ba, Ra, La, Ce, Pr, Nd, Sm, Eu, Tb, Th, Dy, Ho, Er, Em, Gd, Yb, Lu, Y, Mn 및 상기 금속들 중 1 이상의 금속을 포함하는 금속 화합물 중에서 선택된 1 이상을 포함하는 것인 유기발광소자.
- 청구항 1에 있어서, 상기 제1 전자수송층의 n형 도펀트는 제1 전자수송층 총 중량을 기준으로 1 내지 50 중량%의 함량으로 포함되는 것인 유기발광소자.
- 청구항 1에 있어서, 상기 제1 전자수송층의 두께는 50옴스트롱 ~ 100 옴스트롱인 것인 유기발광소자.
- 청구항 1에 있어서, 상기 제2 전자수송층은 알칼리금속 또는 알칼리토금속의 할로겐화물 또는 산화물, 또는 유기금속착체에 의하여 도핑된 것인 유기발광소자.
- 청구항 1에 있어서, 상기 제2 전자수송층은 LiF, NaF, KF, RbF, CsF, MgF2, CaF2, SrF2, BaF2, LiCl, NaCl, KCl, RbCl, CsCl, MgCl2, CaCl2, SrCl2, BaCl2, LiO2, NaO2, BrO2, Cs2O, MgO, CaO, Liq, Naq 및 Kq 중에서 선택된 1 이상에 의하여 도핑된 것인 유기발광소자.
- 청구항 1에 있어서, 상기 제2 전자수송층 중의 금속염, 금속산화물 또는 유기금속염 함량은 제2 전자수송층의 총 중량을 기준으로 10 내지 50 중량%인 것인 유기발광소자.
- 청구항 1에 있어서, 상기 제2 전자수송층의 두께는 50옴스트롱 ~ 500 옴스트롱인 것인 유기발광소자.
- 청구항 1에 있어서, 상기 발광유닛은 1층 이상의 발광층을 포함하는 것인 유기발광소자.
- 청구항 21에 있어서, 상기 발광유닛은 정공수송층, 정공주입층, 정공을 수송 및 주입하는 층, 버퍼층, 전자차단층, 전자수송층, 전자주입층, 전자를 수송 및 주입하는층 및 정공차단층 중 1층 이상을 더 포함하는 것인 유기발광소자.
- 청구항 1 내지 22 중 어느 하나의 항에 있어서, 상기 제1 전자수송층 및 상기 제2 전자수송층은 각각 독립적으로 안트라센 코어에 n형 치환기를 갖는 전자수송물질, 비안트라센 코어에 n형 치환기를 갖는 전자수송물질 또는 유기금속착체를 포함하는 것인 유기발광소자.
- 청구항 1 내지 22 중 어느 하나의 항에 있어서, 상기 제1 전자수송층 및 상기 제2 전자수송층은 각각 독립적으로 이미다졸기, 옥사졸기, 티아졸기, 퀴놀린기 및 페난쓰롤린기로부터 선택되는 작용기를 갖는 화합물; 및 알칼리토금속이온, 희토류금속이온 중 적어도 한 종을 함유하는 유기금속착체 화합물 중 1종 이상을 포함하는 것인 유기발광소자.
- 청구항 23에 있어서, 상기 유기금속착체의 배위자는 퀴놀리놀, 벤조퀴놀리놀, 아크리디놀, 페난트리디놀, 히드록시페닐옥사졸, 히드록시페닐티아졸, 히드록시디아릴옥사디아졸, 히드록시디아릴티아디아졸, 히드록시페닐피리딘, 히드록시페닐벤조이미다졸, 히드록시벤조트리아졸, 히드록시플루보란, 비피리딜, 페난트롤린, 프탈로시아닌, 포피린, 시클로펜타디엔, β-디케톤류 및 아조메틴류 중에서 선택되는 것인 유기발광소자.
- 청구항 1 내지 22 중 어느 한 항에 있어서, 상기 유기 발광 소자는 상기 제1 전극의 발광 유닛이 구비되는 면과 대향하는 면에 기판을 더 포함하고,상기 기판과 상기 제1 전극 사이 또는 상기 제1 전극이 구비되는 면과 대향하는 면에 광산란층을 더 포함하는 것인 유기 발광 소자.
- 청구항 1 내지 22 중 어느 한 항에 있어서, 상기 유기 발광 소자는 플랙서블(flexible) 유기 발광 소자인 것인 유기 발광 소자.
- 청구항 1 내지 22 중 어느 한 항에 따른 유기 발광 소자를 포함하는 디스플레이 장치.
- 청구항 1 내지 22 중 어느 한 항에 따른 유기 발광 소자를 포함하는 조명 장치.
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Also Published As
Publication number | Publication date |
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JP2015518287A (ja) | 2015-06-25 |
JP5973661B2 (ja) | 2016-08-23 |
US20150144897A1 (en) | 2015-05-28 |
KR20130135161A (ko) | 2013-12-10 |
TW201421760A (zh) | 2014-06-01 |
TWI622196B (zh) | 2018-04-21 |
CN104272488A (zh) | 2015-01-07 |
EP2752907A4 (en) | 2015-07-29 |
KR101653212B1 (ko) | 2016-09-01 |
EP2752907A1 (en) | 2014-07-09 |
EP2752907B1 (en) | 2019-07-17 |
CN104272488B (zh) | 2017-09-08 |
US9831457B2 (en) | 2017-11-28 |
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