WO2013175574A1 - 有機elパネルおよびこれを用いた発光装置の製造方法 - Google Patents
有機elパネルおよびこれを用いた発光装置の製造方法 Download PDFInfo
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- WO2013175574A1 WO2013175574A1 PCT/JP2012/063068 JP2012063068W WO2013175574A1 WO 2013175574 A1 WO2013175574 A1 WO 2013175574A1 JP 2012063068 W JP2012063068 W JP 2012063068W WO 2013175574 A1 WO2013175574 A1 WO 2013175574A1
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- organic
- panel
- light emitting
- current density
- density adjusting
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 35
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- 229910052782 aluminium Inorganic materials 0.000 description 4
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- 238000005286 illumination Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/60—Circuit arrangements for operating LEDs comprising organic material, e.g. for operating organic light-emitting diodes [OLED] or polymer light-emitting diodes [PLED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/70—Testing, e.g. accelerated lifetime tests
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Definitions
- the present invention relates to an organic electroluminescence panel (hereinafter referred to as an organic EL panel) and a method for manufacturing a light emitting device using the same.
- LED lighting emits light in a narrow region, it is necessary to diffuse light by some method.
- illumination using an organic EL panel has a merit that a wide and uniform light can be obtained because the organic EL panel itself emits surface light.
- the organic EL panel is very thin, and it is possible to illuminate the wall surface of the room itself by attaching the organic EL panel to a wall or ceiling, etc., and a flexible substrate using flexible plastic Can be attached to the curved surface by providing flexibility.
- the characteristics of the organic EL panel vary depending on the manufacturing process, lot, or light emitting layer material. Due to the variation in the characteristics of the light emitting layer, for example, the characteristics of the light emission luminance (current density-luminance efficiency) vary among the organic EL panels juxtaposed for illumination over a wide area.
- Patent Document 1 includes an organic EL panel that includes an output detection terminal, performs feedback control for controlling power supplied to the light emitting element based on the output of the output detection terminal, and uses a plurality of panels. It is disclosed that the variation in the light emission luminance of the organic EL panel in the case of configuring the above is suppressed.
- Patent Document 1 it is effective to suppress the light emission luminance of the organic EL panel by controlling the power supplied to the light emitting element so that the outputs of the output detection terminals are the same.
- the feedback control circuit since the feedback control circuit is formed, there is a problem that the control circuit is incorporated in the drive circuit system of the organic EL panel, the circuit becomes complicated as a whole, and the manufacturing cost increases.
- the problem to be solved by the present invention is, for example, the above-described problem, and it is possible to reduce the light emission luminance between organic EL panels with a relatively simple configuration without using a control circuit and low manufacturing costs. It is an object of the present invention to provide a light emitting device for an organic EL panel that can suppress the above.
- the organic EL panel of the invention according to claim 1 is a substrate, a light emitting portion of the organic EL panel provided on the substrate, a current supply terminal provided on the substrate for supplying a current to the light emitting portion, A current density adjusting unit electrically connected in parallel to the light emitting unit with respect to the current supply terminal and provided on the substrate, and the current density of the light emitting unit is reduced by processing the current density adjusting unit. It is characterized by adjusting.
- FIG. 2 is a cross-sectional view taken along line AA in FIG.
- FIG. 3 is a cross-sectional view taken along the line BB in FIG. 1.
- FIG. 2 is a circuit diagram of an IC chip that forms a part of the organic EL panel of FIG. 1.
- FIG. 2 is a circuit diagram of an IC chip that forms a part of the organic EL panel of FIG. 1.
- FIG. 2 is a circuit diagram of an IC chip that forms a part of the organic EL panel of FIG. 1.
- an organic EL panel 1 includes a transparent substrate 3 made of a transparent material such as a substantially rectangular glass that bears the light emitting portion 2 at the center thereof.
- External connection terminals 4a and 4b which are current supply terminals, are provided in the vicinity of one end of the substrate 3 in the longitudinal direction, for example.
- the external connection terminals 4a and 4b are connected to the trunk portions 5a and 5b of the conductive pattern 5 provided on the substrate 3, respectively.
- the trunk paths 5 a and 5 b extend along the edge of the substrate 3 in parallel with each other at a position sandwiching the light emitting section 2.
- Branch portions 9-1a, 9-1b, 9-2a, 9-2b, 9-3a, 9-3b, 10-1a, 10-1b, 10-2a, 10-2b, 10-3a of the conductive pattern 5 10-3b extends from the main path portions 5a and 5b and is connected to anodes and cathodes of current density adjusting portions 6-1, 6-2, 6-3, 7-1, 7-2, 7-3. .
- the trunk portion 5a is connected to the anodes of the current density adjusting portions 6-1, 6-2, 6-3, 7-1, 7-2, 7-3 by branch portions 9-1a, 9 of the conductive pattern 5.
- the trunk portion 5b is connected to the cathodes of the current density adjusting portions 6-1, 6-2, 6-3, 7-1, 7-2, 7-3 with the branch portions 9-1b, 9 of the conductive pattern 5.
- the conductive pattern 5 When viewed from the external connection terminals 4a and 4b of the organic EL panel 1 (for example, 4a is the positive side and 4b is the negative side), the conductive pattern 5 has the trunk portions 5a and 5b and the branch portions 8a, 8b, 9- 1a, 9-1b, 9-2a, 9-2b, 9-3a, 9-3b, 10-1a, 10-1b, 10-2a, 10-2b, 10-3a, 10-3b, and the light emitting unit 2
- the current density adjusting units 6-1, 6-2, 6-3, 7-1, 7-2 and 7-3 are electrically connected in parallel to each other to form a parallel circuit.
- the occupied area of the light emitting unit 2 on the substrate 3 is larger than any occupied area of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3.
- the current density adjusting units 6-1 to 6-3 are arranged on the substrate 3 so as to be separated from each other outside one side of the light emitting unit 2.
- the current density adjusting units 7-1 to 7-3 are arranged apart from each other on the other outer side of the light emitting unit 2.
- three current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 are arranged on the side of the light emitting unit 2, respectively.
- the numbers of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 are not limited thereto.
- the areas of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 may be the same or different. When the areas are different, the difference between the areas may be set constant, or may be a constant magnification or a power of 2.
- the areas of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 can be set to known values in advance.
- a mark or the like that can be visually recognized or detected is on or near the substrate 3.
- the cutting means for example, a laser or the like is used, but a mechanical, electromagnetic or optical method can be used.
- the organic EL panel 1 of the present embodiment can adjust the current density of the light emitting part freely by disconnecting any of the current density adjusting parts 6-1 to 6-3 and 7-1 to 7-3. It is.
- the shape of the substrate 3 is not limited to a rectangle but may be a square. Further, it may be circular or elliptical. In short, it is only necessary that the current density adjusting unit is disposed on the side of the light emitting unit 2. Also, the pattern shape of the conductive pattern 5 is such that a current path including a current density adjusting unit is connected in parallel to the light emitting unit 2, and the current flowing through the light emitting unit 2 can be freely controlled by cutting at least one portion of the conductive pattern 5. Any shape that changes is acceptable.
- the organic EL panel 1 according to the present invention is provided with an effective light-emitting area EA including the light-emitting portion 2 as a light-emitting area, and a post-processing that enables post-processing on the side thereof. That is, the processing area PA is provided.
- this organic EL is obtained by cutting a part of the conductive pattern 5 by laser processing, peeling off a part of the cathode of the current density adjusting unit, or cutting the substrate 3.
- the voltage-current characteristics of the panel 1, that is, the current density can be adjusted.
- the light emitting unit 2 includes a transparent electrode 11 that is, for example, an anode laminated on a substrate 3.
- a hole transport layer 12 is stacked on the transparent electrode 11
- an organic EL light emitting layer 13 is stacked on the hole transport layer 12
- an electron transport layer 14 is stacked on the organic EL light emitting layer 13, and an electron transport layer 14 is stacked.
- a metal electrode 15 as a cathode is laminated on the top.
- indium tin oxide can be used as the anode material
- aluminum Al
- cathode material indium tin oxide
- the structure of the organic functional layer including the hole transport layer 12, the organic EL light emitting layer 13, and the electron transport layer 14 stacked on each other between the transparent electrode 11 and the metal electrode 15 is a three-layer structure.
- an organic functional layer is, for example, a single layer structure of the organic EL light-emitting layer 13, a two-layer structure including the hole transport layer 12 and the organic EL light-emitting layer 13, or a hole injection layer, a hole transport layer 12, and an organic EL light-emitting layer. 13, various structures such as a five-layer structure including an electron transport layer 14 and an electron injection layer (not shown) can be taken.
- the light emitting section 2 is disclosed in, for example, Japanese Patent Application Laid-Open No. 2007-42658, and many of R (red), G (green), and B (blue) striped organic EL laminated bodies are R, G, A structure juxtaposed in the order of B can also be taken (not shown).
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 are also respectively R, G, and B. It is necessary to have a stripe structure corresponding to each group (not shown).
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 have the same layer structure as the light emitting unit 2. Accordingly, the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 can be formed by the same process as the light emitting unit 2.
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 are resistors.
- each of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 includes a conductive layer 16 formed on the substrate 3 and a resistor stacked on the conductive layer 16.
- a multilayer resistor comprising the layer 17.
- each of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 may be a one-layered resistor of the conductive layer 16.
- the material of the conductive layer 16 a known conductive material such as Al, Cr, ITO or the like can be used.
- a material of the resistance layer 17 for example, Al or Cr may be used.
- a material having desired resistance characteristics can be used.
- the conductive layer 16 and / or the resistance layer 17 may be made of the same material as one layer in the light emitting unit 2.
- the conductive layer 16 is made of the same material as the transparent electrode 11 serving as an anode and the metal layer 15 serving as a cathode, the conductive layer 16 and the resistance layer are formed in the course of the manufacturing process of the light emitting unit 2. 17 can be formed.
- the resistance values of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 may be the same or different. When the resistance values are different, the difference between the resistance values may be set constant, or may be a constant magnification or a power of two.
- the resistance values of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 can be set to known values in advance.
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 may include a chip component 18 such as a chip resistor.
- each of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 is an IC chip in which a parallel circuit of a diode D1 and a variable resistor VR1 as shown in FIG. Also good.
- the variable resistor VR1 in FIG. 4 can be replaced with a semi-fixed resistor.
- Such an IC chip may be an IC chip having a series circuit of a diode D2 as shown in FIG. 5 and resistors R1, R2 and R3 connected in parallel.
- An IC chip of a current mirror circuit as shown in FIG. 6 can also be used.
- FIG. 7 shows a case where the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 include the chip component 18.
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 include a chip component mounting unit 19 on which the chip component 18 can be mounted.
- the chip component 18 has, for example, a shape in which an IC chip (not shown) is embedded with a resin material, and has a positive terminal 20A at one end and a negative terminal 20B at the other end. Further, the chip component mounting portion 19 has a positive terminal 21A and a negative terminal 21B corresponding to the positive terminal 20A and the negative terminal 20B of the chip component 18.
- the chip component 18 By attaching the chip component 18 to the chip component mounting portion 19, the positive terminal 20A and the positive terminal 21A are connected, the negative terminal 20B and the negative terminal 21B are connected, and current can be supplied through the branch portion. .
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 are resistors, they may be outside a sealing unit (not shown) for blocking the light emitting element from moisture or the like.
- the chip component mounting unit 19 is connected later according to the electrical characteristics of the organic EL panel 1.
- the mounted chip component 18 can be replaced with the chip component 18 having the optimum electrical characteristics with different resistance values.
- the electrical characteristics of the organic EL panel 1 are measured before the chip component 18 is mounted on the chip component mounting portion 19, and the optimal chip component 18 is mounted so as to obtain a desired electrical characteristic according to the measurement result. May be.
- the chip component mounting portion 19 on which the chip component 18 can be mounted may be provided in at least a part of the current density adjusting portions 6-1 to 6-3 and 7-1 to 7-3. Further, the chip component 18 mounted on the chip component mounting unit 19 may be the same type of IC chip in each of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3, or different types. An IC chip may be used.
- the shape of each of these terminal portions is not limited to the illustrated shape, and can take various shapes in which the chip component 18 and the chip mount portion 19 are connected.
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 include a chip part 18, chip part mounting parts 19A and 19B, and joint parts 22A and 22B.
- the chip component mounting portion 19A has a positive terminal 21A
- the chip component mounting portion 19B has a negative terminal 21B.
- the chip component mounting portions 19A and 19B are formed of a metal such as Al on the substrate 3 and are arranged apart from each other.
- the chip component 18 has a positive terminal 20A and a negative terminal 20B corresponding to the positive terminal 21A and the negative terminal 21B, and is disposed on the chip components 19A and 19B.
- the positive terminal 20A and the positive terminal 21A are connected
- the negative terminal 20B and the negative terminal 21B are connected, and current can be supplied via the branch portion.
- the joining portions 22A and 22B are formed of, for example, solder or silver paste, and join the positive terminal 20A and the positive terminal 21A, and join the negative terminal 20B and the negative terminal 21B. Further, the chip component 18, the chip component mounting portions 19A and 19B, and the joint portions 22A and 22B may be covered with, for example, a resin material, and molded and cured.
- a part of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 is stacked on a part of the chip component mounting unit 19. As a result, the adhesion of the chip component mounting portion 19 is improved, and the chip component mounting portion 19 is hardly peeled off from the substrate 3.
- a substrate 3 made of a transparent material such as glass or plastic is prepared, and a transparent electrode 11 that is an anode pattern is formed on the substrate 3 (step S1).
- a conductive material having a large work function for example, indium tin oxide (ITO) having a thickness of about 1000 to 3000 mm or gold having a thickness of about 800 to 1500 mm can be used.
- ITO indium tin oxide
- an anode pattern is formed on the substrate 3 by, for example, vapor deposition or sputtering, and patterned by photolithography.
- a hole transport layer 12 is formed on the anode pattern made of the transparent electrode 11 (step S2).
- the organic EL light emitting layer 13 is applied on the hole transport layer 12 formed in step S2 (step S3).
- the electron transport layer 14 is formed on the organic EL light emitting layer 13 applied in Step S3 (Step S4).
- a metal electrode 15 as a cathode is formed on the electron transport layer 14 (step S5).
- a metal having a small work function for example, aluminum, magnesium, indium, silver, or an alloy of about 100 to 5000 mm in thickness can be used.
- the external connection terminals 4a and 4b and the conductive pattern 5 are formed on the substrate 3 by a known method.
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 have the same layer structure as the light emitting unit 2, it can be performed simultaneously with the manufacturing process of the organic EL panel 1 shown in FIG. .
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 are resistors, first, the conductive layer 16 is formed on the substrate 3 prepared in step S1 of the manufacturing process of the organic EL panel 1. Is formed (step SP1).
- the conductive layer 16 is formed by a known method. If the conductive layers 16 of the current density adjusting portions 6-1 to 6-3 and 7-1 to 7-3 are made of the same material as the transparent electrode 11 of the light emitting portion 2, step S1 of the manufacturing process of the organic EL panel 1 Can be done at the same time. In the case where each of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 is a single-layer resistor of the conductive layer 16, this manufacturing process ends.
- each of the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 is a laminated resistor of the conductive layer 16 and the resistance layer 17, a resistance is formed on the conductive layer 16 formed in step SP1.
- Layer 17 is formed (step SP2).
- the resistance layer 17 is formed by a known method.
- the resistance layer 17 is the same as the metal electrode 15 of the light emitting unit 2, the formation of the resistance layer 17 can be performed simultaneously with step S ⁇ b> 5 of the manufacturing process of the organic EL panel 1.
- the conductive layer 16 has a one-layer structure.
- the chip component mounting portion 19 is formed, and the positive terminal 21A and the negative terminal 21B corresponding to the positive terminal 20A and the negative terminal 20B of the chip component 18 are formed.
- the chip component mounting portion 19 is formed and corresponds to the positive terminal 20A and the negative terminal 20B of the chip component 18.
- a positive terminal 21A and a negative terminal 21B are formed.
- FIG. 12 illustrates a method for manufacturing a light emitting device.
- the organic EL panel 1 shown in FIG. 1 is prepared (Step SS1).
- step SS2 the organic EL panel 1 is driven (step SS2). That is, in this step, the positive and negative terminals of the DC power supply are connected to the external connection terminals 4a and 4b of the organic EL panel 1. From external connection terminals 4a and 4b to trunk sections 5a and 5b, branch sections 8a and 8b, 9-1a, 9-1b, 9-2a, 9-2b, 9-3a, 9-3b, 10-1a, 10 -1b, 10-2a, 10-2b, 10-3a, and 10-3b, DC power is supplied to the light emitting unit 2, current density adjusting units 6-1 to 6-3, and 7-1 to 7-3.
- step SS3 the electrical characteristics and emission luminance of the organic EL panel 1 are adjusted (step SS3).
- the electrical characteristics such as voltage and resistance between the external connection terminals 4a and 4b of the organic EL panel 1 and the light emission luminance of the light emitting unit 2 in the effective light emitting area EA are measured, and the light emission in the effective light emitting area EA is measured.
- the external connection terminals 4a and 4b are adjusted so as to have desired electrical characteristics so that the portion 2 has a desired light emission luminance. It is also possible to measure either the electrical characteristics such as the voltage or resistance between the external connection terminals 4a and 4b of the organic EL panel 1 and the light emission luminance of the light emitting unit 2 in the effective light emitting area EA.
- the electrical characteristics can be adjusted between the external connection terminals 4a and 4b.
- the number of current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 included in the parallel circuit by the conductive pattern 5 is adjusted. can do.
- the branch section 9-3a connecting the main path section 5a to the anode of the current density adjusting section 6-3 is disconnected, and the current density adjusting section 6-3 is removed from the parallel circuit of the organic EL panel 1.
- the overall resistance value of the parallel circuit is increased, and the voltage between the external connection terminals 4a and 4b can be adjusted. That is, it is possible to adjust the current flowing individually in the light emitting unit 2 between the branch units 8a and 8b.
- the main road part 5a and the anode of the current density adjusting part 6-2 are connected.
- the branch part 9-2a is cut with a laser or the like, and the current density adjusting part 6-2 is disconnected from the parallel circuit of the organic EL panel 1.
- a part of the cathode of the current density adjusting unit may be peeled off, and the branch part 9-2b may be cut with a laser or the like.
- a part of the conductive pattern (for example, branch portions 9-1a, 9-1b, 9-2a, 9-2b, 9-3a, 9-3b, 10-1a, 10-1b, 10-2a, 10-2b, 10-3a, or 10-3b) is cut with a laser or the like as necessary to adjust the electrical characteristics of the parallel circuit of the organic EL panel 1, and the current density adjusting unit Any one or more of 6-1 to 6-3 and 7-1 to 7-3 are separated from the parallel circuit of the organic EL panel 1.
- the conductive pattern 5 including is made of a metal of a known conductive material and can be easily cut by a laser or the like.
- the branch portion 9-3a connecting the trunk portion 5a and the anode of the current density adjusting portion 6-3 is cut by a laser, but the trunk portion 5b and the current density adjusting portion are cut.
- the branch part 9-3b connecting the cathode of the part 6-3 may be cut.
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 have the same layer structure as the light emitting unit 2, the current density adjusting units 6-1 to 6-3 and 7-1 ⁇ 7-3 will also emit light. In the case where it interferes with the measurement of the light emission luminance of the light emitting section 2, the current density adjusting sections 6-1 to 6-3 and 7-1 to 7-3 are masked or covered, and the current density adjusting section 6-1. The light emitting portions of ⁇ 6-3 and 7-1 to 7-3 may be hidden.
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 include the chip component mounting unit 19, in this step, the voltage between the external connection terminals 4a and 4b of the organic EL panel 1 Electrical characteristics such as resistance and the light emission luminance of the light emitting section 2 in the effective light emitting area EA are measured, and the optimum chip component 18 is later replaced so that the light emitting section 2 in the effective light emitting area EA has a desired light emission luminance. Thus, adjustment may be made so that desired electrical characteristics are obtained between the external connection terminals 4a and 4b.
- a light emitting device using the organic EL panel 1 after the adjustment of the electrical characteristics and the light emission luminance is completed is assembled (step SS4).
- the organic EL panel 1 with adjusted emission luminance is subjected to other necessary inspections and processes such as deburring and cleaning, and a light emitting device using the organic EL panel 1 is assembled.
- the light emitting unit 2 and the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 in the effective light emitting area EA have the outer shape and the stacked structure as the stacked body. Are different from each other.
- the stacked structure in the light emitting section 2 is, for example, a juxtaposed structure of stripe-shaped organic EL stacked groups, and the current density adjusting sections 6-1 to 6-3 and 7-1 to 7-3 are arranged.
- the light emitting part 2 and the current density adjusting parts 6-1 to 6-3 and 7-1 to 7-3 are formed in parallel by a series of processes as a juxtaposed structure of stripe-shaped organic EL laminates. Is possible.
- the position of the boundary line between the effective light emitting area EA and the post-processing area PA in the longitudinal direction of the substrate 3 can be selected.
- the organic EL panel 1 according to the present invention can be stored in a case (not shown) having a transparent window having a shape conforming to a predetermined standard, for example, and can be commercialized as a light emitting device, that is, a lighting device. is there.
- the current density adjusting units 6-1 to 6-3 and 7-1 to 7-3 have the same layer structure as the light emitting unit 2, the current density adjusting units 6-1 to 6-3 and 7-1 ⁇ 7-3 may be provided in the effective light emitting area EA.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
2 発光部
3 基板
4a、4b 外部接続端子
5 導電パターン
5a、5b 幹路部
6-1~6-3、7-1~7-3 電流密度調整部
8a、8b、9-1a~9-3a、9-1b~9-3b、10-1a~10-3a、1 0-1b~10-3b 枝路部
11 透明電極(陽極)
12 ホール輸送層
13 有機EL発光層
14 電子輸送層
15 金属電極(陰極)
16 導電層
17 抵抗層
18 チップ部品
19 チップ部品マウント部
20A 正端子
20B 負端子
21A 正端子
21B 負端子
22A、22B 接合部
EA 有効発光領域
PA 後処理加工領域
Claims (9)
- 基板と、前記基板上に設けられた有機ELパネルの発光部と、前記発光部に電流を供給する前記基板上に設けられた電流供給端子と、前記電流供給端子に対して前記発光部と電気的に並列に接続され、前記基板上に設けられた電流密度調整部とを含み、前記電流密度調整部の加工によって、前記発光部の電流密度を調整することを特徴とする有機ELパネル。
- 前記電流密度調整部は、切断容易部を含み、前記電流密度調整部の加工は前記切断容易部を機械的、電磁的若しくは光学的手法により切断することを特徴とする請求項1記載の有機ELパネル。
- 前記電流密度調整部は、前記発光部と同一のプロセスで形成されていることを特徴とする請求項2記載の有機ELパネル。
- 前記電流密度調整部は、抵抗体で形成されていることを特徴とする請求項2記載の有機ELパネル。
- 前記電流密度調整部は、有効発光領域内に設けられていることを特徴とする請求項2記載の有機ELパネル。
- 前記電流密度調整部は、チップ部品をマウントし得るチップ部品マウント部を含むことを特徴とする請求項1記載の有機ELパネル。
- 請求項1記載の有機ELパネルの前記電流供給端子を介して電気的特性を測定する測定ステップと、
前記測定ステップにおける測定結果に応じて、前記有機ELパネルの前記電流密度調整部への個別の電流路の一部を選択的に切断する切断ステップと、
前記切断ステップを経た有機ELパネルを含む発光装置を形成する有機EL発光装置の製造方法。 - 前記測定ステップは、前記有機ELパネルの発光部の発光輝度を測定する輝度測定ステップを含むことを特徴とする請求項7記載の方法。
- 請求項6記載の有機ELパネルの前記電流供給端子を介して電気的特性を測定する測定ステップと、
前記測定ステップにおける測定結果に応じて、前記有機ELパネルの前記チップ部品マウント部にチップ部品をマウントするマウントステップと、
前記マウントステップを経た有機ELパネルを含む発光装置を形成する有機EL発光装置の製造方法。
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JP2014516555A JP5977343B2 (ja) | 2012-05-22 | 2012-05-22 | 有機elパネルおよびこれを用いた発光装置の製造方法 |
US14/402,663 US20150145440A1 (en) | 2012-05-22 | 2012-05-22 | Organic el panel and method for manufacturing light-emitting device using the same |
PCT/JP2012/063068 WO2013175574A1 (ja) | 2012-05-22 | 2012-05-22 | 有機elパネルおよびこれを用いた発光装置の製造方法 |
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PCT/JP2012/063068 WO2013175574A1 (ja) | 2012-05-22 | 2012-05-22 | 有機elパネルおよびこれを用いた発光装置の製造方法 |
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US (1) | US20150145440A1 (ja) |
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Cited By (1)
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JP2016170963A (ja) * | 2015-03-12 | 2016-09-23 | パイオニア株式会社 | 発光装置 |
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JPH09305145A (ja) * | 1996-05-16 | 1997-11-28 | Fuji Electric Co Ltd | 表示素子駆動方法 |
JPH11312582A (ja) * | 1998-04-28 | 1999-11-09 | Nippon Seiki Kk | 有機エレクトロルミネセンス |
JP2001005420A (ja) * | 1999-06-22 | 2001-01-12 | Nippon Seiki Co Ltd | 有機エレクトロルミネセンス素子 |
JP2006215227A (ja) * | 2005-02-03 | 2006-08-17 | Seiko Epson Corp | 発光装置の改善方法及び発光装置 |
JP2007011218A (ja) * | 2005-07-04 | 2007-01-18 | Sharp Corp | 表示装置 |
JP2008051977A (ja) * | 2006-08-23 | 2008-03-06 | Denso Corp | パッシブマトリックス型表示装置 |
JP2009123363A (ja) * | 2007-11-12 | 2009-06-04 | Rohm Co Ltd | 有機エレクトロルミネセンス装置 |
JP2010170773A (ja) * | 2009-01-21 | 2010-08-05 | Nippon Seiki Co Ltd | 有機elパネル |
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2012
- 2012-05-22 WO PCT/JP2012/063068 patent/WO2013175574A1/ja active Application Filing
- 2012-05-22 US US14/402,663 patent/US20150145440A1/en not_active Abandoned
- 2012-05-22 JP JP2014516555A patent/JP5977343B2/ja active Active
Patent Citations (8)
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JPH09305145A (ja) * | 1996-05-16 | 1997-11-28 | Fuji Electric Co Ltd | 表示素子駆動方法 |
JPH11312582A (ja) * | 1998-04-28 | 1999-11-09 | Nippon Seiki Kk | 有機エレクトロルミネセンス |
JP2001005420A (ja) * | 1999-06-22 | 2001-01-12 | Nippon Seiki Co Ltd | 有機エレクトロルミネセンス素子 |
JP2006215227A (ja) * | 2005-02-03 | 2006-08-17 | Seiko Epson Corp | 発光装置の改善方法及び発光装置 |
JP2007011218A (ja) * | 2005-07-04 | 2007-01-18 | Sharp Corp | 表示装置 |
JP2008051977A (ja) * | 2006-08-23 | 2008-03-06 | Denso Corp | パッシブマトリックス型表示装置 |
JP2009123363A (ja) * | 2007-11-12 | 2009-06-04 | Rohm Co Ltd | 有機エレクトロルミネセンス装置 |
JP2010170773A (ja) * | 2009-01-21 | 2010-08-05 | Nippon Seiki Co Ltd | 有機elパネル |
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JP2016170963A (ja) * | 2015-03-12 | 2016-09-23 | パイオニア株式会社 | 発光装置 |
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JP5977343B2 (ja) | 2016-08-24 |
JPWO2013175574A1 (ja) | 2016-01-12 |
US20150145440A1 (en) | 2015-05-28 |
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