WO2013174097A1 - 微波炉及用于微波炉的半导体功率源 - Google Patents
微波炉及用于微波炉的半导体功率源 Download PDFInfo
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- WO2013174097A1 WO2013174097A1 PCT/CN2012/083384 CN2012083384W WO2013174097A1 WO 2013174097 A1 WO2013174097 A1 WO 2013174097A1 CN 2012083384 W CN2012083384 W CN 2012083384W WO 2013174097 A1 WO2013174097 A1 WO 2013174097A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 238000001514 detection method Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 239000003990 capacitor Substances 0.000 claims description 49
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000003321 amplification Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 238000011161 development Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/66—Circuits
- H05B6/68—Circuits for monitoring or control
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B40/00—Technologies aiming at improving the efficiency of home appliances, e.g. induction cooking or efficient technologies for refrigerators, freezers or dish washers
Definitions
- Microwave ovens and semiconductor power sources for microwave ovens are Microwave ovens and semiconductor power sources for microwave ovens
- the present invention relates to the field of semiconductor microwave technology, and more particularly to a semiconductor power source for a microwave oven and a microwave oven having a semiconductor power source. Background technique
- the current magnetron microwave oven is shown in FIG. 1 and includes a magnetron tube, a microwave oven chamber 2, a control system 3, and a power source 4, which has high cost, large volume, large weight, high voltage, etc.
- the main components of the magnetron microwave oven include magnetrons, high voltage transformers, high voltage capacitors, high voltage diodes, rectangular waveguides, cavities, furnace doors and control sections.
- the AC power supply provides a filament voltage to the magnetron via a high voltage transformer. After the AC power is boosted by the high voltage transformer, the high voltage capacitor and the high voltage diode, it becomes a DC pulsating high voltage, and the magnetron can emit microwave. After the microwave enters the cavity of the microwave oven through the rectangular waveguide, it acts on the heated substance in the cavity to realize rapid microwave heating.
- microwaves In addition to the ability of the magnetron to emit microwaves, semiconductor devices are currently capable of emitting microwaves.
- the existing semiconductor microwave technology is mainly used for communication, and the main difference between the microwave used for communication and the microwave used for heating is that the frequency band of the microwave is different.
- microwave efficiency of semiconductors is getting higher and higher, the cost is getting lower and lower, the weight is getting lighter, and the power density per unit volume is getting larger and larger.
- the application in microwave oven is semiconductor microwave. The inevitable trend of technological development.
- the microwave power sources currently studied in semiconductor microwave ovens are all using the source and amplification principle. In practical applications, the cost is high and the system is complicated. In particular, the source part needs to use a dedicated module, and the design and development difficulties are difficult. And the amplification part is a two-stage amplification, that is, the first small signal amplification and the second amplification.
- the prior art semiconductor microwave oven includes a semiconductor power source 10, a microwave oven cavity 20, a control system 30, and a power source 40.
- the power source 40 supplies power to the semiconductor power source 10, and the semiconductor power source 10 sends a microwave of 2400 MHz to 2500 MHz into the microwave oven cavity 20 to heat the food in the furnace chamber 20. As shown in FIG.
- a common semiconductor power source includes a power source 40, a signal source 13, a first stage amplifier 11 and a second stage amplifier 12, wherein the signal source 13 generates a microwave signal of 2400 MHz to 2500 MHz and outputs it to the first stage amplifier 11.
- the 2400MHz ⁇ 2500MHz microwave signal is amplified by the first-stage amplifier 11 into a low-power microwave signal, and then input to the secondary amplifier 12 to obtain a high-power microwave output.
- the magnitude and quality of the microwave output power depend on the performance of the two-stage amplifier, and the frequency depends on the frequency of the signal source 13 being emitted.
- the source and amplification principle of the semiconductor microwave source is more suitable for the microwave signal requirements of the communication industry, and the microwave linearity is not very high for the 2400MHz ⁇ 2500MHz microwave signal used for heating.
- the magnetron microwave oven has disadvantages such as high cost, large volume, large weight, and high voltage
- the existing semiconductor microwave oven has the disadvantages of high cost, complicated system, and difficulty in independent design and development. Summary of the invention
- the object of the present invention is to at least solve one of the above technical problems.
- the object of the present invention is to provide a semiconductor power source for a microwave oven and a microwave oven having the semiconductor power source, which has a simple and reasonable structure, low manufacturing cost, and high reliability to overcome the prior art. Inadequacies.
- a first aspect of the present invention provides a semiconductor power source for a microwave oven, the semiconductor power source including a bias voltage and control module, a power detection module, a power combiner, and a plurality of LDMOS transistors, wherein The gates of the plurality of LDMOS transistors are connected in parallel to the bias voltage and control module, the sources of the plurality of LDMOS transistors are common, and the drains of the plurality of LDMOS transistors are connected in parallel with the power synthesis Connected to the plurality of LDMOS tubes to generate microwaves of a preset frequency according to the self-oscillation circuit; the power combiner for adjusting the plurality of An output impedance of the LDMOS transistor, and controlling a phase of the wave outputted by the plurality of LDMOS transistors to be the same; the power detecting module, configured to detect a reflected power and an output power of the semiconductor power source, according to the reflected power and the output power Generating a detection signal and transmitting the detection
- control system outputs a frequency adjustment signal to the bias voltage and control module to adjust the heating frequency of the semiconductor power source.
- control system further outputs a voltage adjustment signal to control an output power of the semiconductor power source.
- the power detection module includes: a first resistor, one end of the first resistor is connected to a signal end of the reflected power; a first control chip, the first control The third pin of the chip is connected to the other end of the first resistor, the fourth pin and the fifth pin of the first control chip are connected to be grounded, and the second pin of the first control chip is grounded; a second resistor, one end of the second resistor is connected to one end of the first resistor, and the other end of the second resistor is connected to a sixth pin of the first control chip; One end of the third resistor is grounded, and the other end of the third resistor is connected to the first pin of the first control chip; the first capacitor, one end of the first capacitor and the sixth of the first control chip respectively a pin is connected to the other end of the second resistor; a fourth resistor, one end of the fourth resistor is connected to the other end of the first capacitor, and the other end of the fourth resistor is respectively connected to the first control First chip
- the pin is
- the power detection module further includes: a second control chip, wherein the fourth pin and the fifth pin of the second control chip are connected to be grounded, and the second pin of the second control chip is grounded; a capacitor, one end of the second capacitor is connected to a sixth pin of the second control chip; a fifth resistor, one end of the fifth resistor is connected to the other end of the second capacitor, and the other end of the fifth resistor is connected to the first pin of the second control chip; a sixth resistor, the first One end of the six resistor is connected to the first pin of the second control chip, the other end of the sixth resistor is grounded; the seventh resistor, one end of the seventh resistor and the sixth tube of the second control chip The other end of the seventh resistor is connected to the signal end of the output power; the eighth resistor, one end of the eighth resistor is connected to the third pin of the second control chip, the eighth The other end of the resistor is connected to the other end of the seventh resistor.
- the bias voltage and control module further includes: a ninth resistor and a Zener diode connected in series, a positive terminal of the Zener diode is grounded, and one end of the ninth resistor is opposite to the semiconductor a DC power input end of the power source is connected; a third capacitor, one end of the third capacitor is connected to one end of the ninth resistor, and the other end of the third capacitor is grounded; a variable capacitor, the variable capacitor One end is connected to one end of the ninth resistor, the other end of the variable capacitor is grounded, a control end of the variable capacitor is connected to the control system; a triode, an emitter of the triode and the ninth resistor Connected to a node between the Zener diodes; a tenth resistor, one end of the tenth resistor is connected to the control system, and the other end of the tenth resistor is connected to a base of the triode; One end of the variable resistor is connected to the collector of the triode, and the other end of the
- a microwave oven includes: a microwave oven cavity; the semiconductor power source for a microwave oven described above, for generating a microwave of a preset frequency; a control system, the control system and The semiconductor power source is connected to adjust an output power and a heating frequency of the semiconductor power source to control heating of food in the microwave oven cavity; a DC power source, the DC power source and the semiconductor power source and the control respectively A system is coupled for powering the semiconductor power source and the control system.
- the microwave generating structure of the semiconductor power source is performed Simplification, reduced cost, improved reliability, simple and reasonable structure, low production cost, and good reliability.
- control system output voltage adjustment signal adjusts an output voltage of the DC power source to control an output power of the semiconductor power source.
- the microwave of the preset frequency ranges from 2400 MHz to 2500 MHz.
- FIG. 1 is a schematic structural view of a conventional magnetron microwave oven
- FIG. 2 is a schematic diagram of control of a conventional semiconductor microwave oven
- FIG. 3 is a schematic diagram of a semiconductor power source of the conventional general amplification principle
- FIG. 5 is a schematic diagram of a control system of a microwave oven according to an embodiment of the present invention
- FIG. 6A is a diagram showing power consumption of a power detection module according to an embodiment of the present invention. Detecting part of the circuit diagram
- 6B is a circuit diagram of a power detecting module for an output power detecting portion according to an embodiment of the present invention.
- FIG. 7 is a circuit diagram of a bias voltage and control module in accordance with an embodiment of the present invention. and an intent.
- a magnetron microwave oven a magnetron, a microwave oven 2, a control system 3, and a power source 4;
- semiconductor power source 10 of the present invention bias And a control module 41, a power detecting module 42, a power combiner 43 and a plurality of LDMOS transistors (44, 45 N ), a first resistor R1, a first control chip U1, a second resistor R2, a third resistor R3, and a first capacitor And a fourth resistor R4, a second control chip U2, a second capacitor C2, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7 and an eighth resistor R8, a ninth resistor R9, a Zener diode Dl, a third capacitor C3, variable capacitor C4, transistor Q1, tenth resistor R10, variable resistor R12 and eleventh resistor R11; in the furnace of the present
- the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the applicability of other processes and/or the use of other materials.
- the structure of the first feature described below "on" the second feature may include embodiments in which the first and second features are formed in direct contact, and may include additional features formed between the first and second features. The embodiment, such that the first and second features may not be in direct contact.
- a source of source and a microwave oven having the semiconductor power source having the semiconductor power source.
- the semiconductor power source for a microwave oven proposed by the first aspect of the present invention includes a bias voltage and control module 41, a power detecting module 42, a power combiner 43, and a plurality of LDMOS (Lateral Diffused Metal Oxide Semiconductor, Lateral diffusion metal oxide semiconductor) tube (44, 45 N ).
- N can range from 44-54.
- the gates of the plurality of LDMOS transistors (44, 45 N ) are connected in parallel to the bias voltage and control module 41, and the plurality of LDMOS transistors (44, 45)
- the source of N) is common, the drains of the plurality of LDMOS transistors (44, 45 N ) are connected in parallel to the power combiner 43 , and the plurality of LDMOS transistors ( 44 , 45 N ) generate microwaves of a preset frequency according to the self-oscillation circuit. .
- the microwave of the preset frequency ranges from 2400 MHz to 2500 MHz.
- the output ends of the plurality of LDMOS transistors (44, 45 N ) are connected to the power combiner 43 through capacitors, and the output impedances of the plurality of LDMOS transistors (44, 45 N ) are connected in parallel, and the power combiner 43 is used to adjust multiple
- the output impedance of the LDMOS transistor (44, 45 N ) for example, the power combiner 43 can adjust the impedance to a 50 ohm output, and simultaneously control the phases of the waves output by the plurality of LDMOS transistors (44, 45 N ) to the same level and together, Helps reduce losses.
- the power detection module 42 is configured to detect the reflected power and output power of the semiconductor power source, generate a detection signal based on the reflected power and the output power, and transmit the detection signal to a control system of the microwave oven.
- the bias voltage and control module 41 is used for multiple LDMOS tubes (44, 45)
- N provides a bias voltage and adjusts the bias voltage to adjust the heating frequency and output power of the semiconductor power source under the control of the microwave oven's control system.
- the control system 51 of the microwave oven outputs a semiconductor power source turn-off signal C , a semiconductor power source adjustment signal E to a bias voltage and control module 41 to regulate the heating of the semiconductor power 50.
- the frequency which enables the heating frequency to vary between 2400 MHz and 2500 MHz.
- the control system 51 of the microwave oven also outputs a voltage adjustment signal D to regulate the output voltage of the DC power source 52 to control the output power of the semiconductor power source 50.
- the output voltage varies between DC0-32V.
- the power detecting module 42 outputs the semiconductor power source output power detecting signal A and the semiconductor power source reflected power detecting signal B to the control system 51 of the microwave oven.
- the power detecting module 42 includes a first resistor R1, a first control chip U1, a second resistor R2, a third resistor R3, and a A capacitor and a fourth resistor R4. Wherein one end of the first resistor R1 is connected to the signal end of the reflected power.
- the third pin 3 of the first control chip U1 is connected to the other end of the first resistor R1.
- the fourth pin 4 and the fifth pin 5 of the first control chip U1 are connected to each other and grounded.
- the second control chip U1 is second. Pin 2 is grounded.
- One end of the second resistor R2 is connected to one end of the first resistor R1, and the other end of the second resistor R2 is connected to the sixth pin 6 of the first control chip U1.
- One end of the third resistor R3 is grounded, and the other end of the third resistor R3 is connected to the first pin 1 of the first control chip U1.
- One end of the first capacitor C1 is respectively connected to the other end of the sixth pin 6 and the second resistor R2 of the first control chip U1, and one end of the fourth resistor R4 is connected to the other end of the first capacitor C1, and the fourth resistor R4 is The other end is connected to the other end of the first pin 1 and the third resistor R3 of the first control chip U1, respectively.
- the power detecting module 42 detects the output power.
- the sub-controller further includes a second control chip U2, a second capacitor C2, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, and an eighth resistor R8.
- the fourth pin 4 and the fifth pin 5 of the second control chip U2 are connected to each other and grounded, and the second pin 2 of the second control chip U2 is grounded.
- One end of the second capacitor C2 is connected to the sixth pin 6 of the second control chip U2, one end of the fifth resistor R5 is connected to the other end of the second capacitor C2, and the other end of the fifth resistor R5 is connected to the second control chip U2.
- the first pin 1 is connected.
- One end of the sixth resistor R6 is connected to the first pin 1 of the second control chip U2, and the other end of the sixth resistor R6 is grounded.
- One end of the seventh resistor R7 is connected to the sixth pin 6 of the second control chip U2, and the other end of the seventh resistor R7 is connected to the signal end of the output power.
- One end of the eighth resistor R8 is connected to the third pin 3 of the second control chip U2, and the other end of the eighth resistor R8 is connected to the other end of the seventh resistor R7.
- the power detection module 42 couples the output power and reflected power of each LDMOS transistor by the directional coupling principle, and then converts it into an output voltage supply control system 51 through the control chips U1 and U2.
- the bias voltage and control module 41 further includes a ninth resistor R9, a Zener diode D1, a third capacitor C3, a variable capacitor C4, a transistor Q1, and a tenth resistor R10. , a variable resistor R12 and an eleventh resistor Rl l.
- the ninth resistor R9 and the Zener diode D1 are connected in series, and the positive terminal of the Zener diode D1 is grounded, and one end of the ninth resistor R9 is connected to the DC power input end of the semiconductor power source 50 (for example, +32V).
- One end of the third capacitor C3 is connected to one end of the ninth resistor R9, the other end of the third capacitor C3 is grounded, one end of the variable capacitor C4 is connected to one end of the ninth resistor R9, and the other end of the variable capacitor C4 is grounded, variable The control terminal of capacitor C4 is coupled to control system 51 (semiconductor power source adjustment signal E).
- the emitter of the transistor Q1 is connected to a node between the ninth resistor R9 and the Zener diode D1, and one end of the tenth resistor R10 is connected to the control system 51 (semiconductor power source turn-off signal C), and the other end of the tenth resistor R10 is
- the base of the transistor Q1 is connected, one end of the variable resistor R12 is connected to the collector of the transistor Q1, and the other end of the variable resistor R12 is grounded.
- One end of the eleventh resistor R11 is connected to the control terminal of the variable resistor R12, and the other end of the eleventh resistor R11 is connected to the gates of the plurality of LDMOS transistors, respectively.
- the 32V DC power input is converted to 5V through the Zener diode D1 and its series resistor R9, and then the voltage output of about 2.5V is realized by the variable resistor R12.
- the triode Q1 is connected in series with the 5V circuit output of the Zener diode D1 and its series resistor R9, and the semiconductor power source shutdown signal c is output through the control system 51 to control the switch of the transistor Q1 to realize the gate voltage control of the supply LDMOS transistor. , control the switch of each LDMOS tube.
- variable digital variable capacitor C4 which is serially connected between the 32V DC power source and the ground, outputs a semiconductor power source adjustment signal E through the control system 51 to adjust the change of the variable capacitor C4. Thereby adjusting the operating frequency of the semiconductor power source.
- the bias voltage and control module 41 and the power detecting module 42 all use simple components such as resistors, capacitors, etc., the circuit structure is simple, the loss is small, the cost is greatly reduced, and the reliability is improved.
- the working principle of the semiconductor power source 50 based on the principle of oscillating microwave generation in the embodiment of the present invention is as follows:
- the LDMOS tube generates a microwave with a frequency of 2450 MHz and 50 MHz through a self-oscillation circuit, and the magnitude of the microwave power is determined by the power of the LDMOS tube. The number is determined.
- the variable capacitance value of the self-oscillating circuit the frequency can also be changed.
- the cavity standing wave ratio is selected in the range of 2400 MHz to 2500 MHz. The minimum frequency of the standing wave is heated. Adding simplicity, greatly reducing costs and increasing reliability.
- a microwave oven according to an embodiment of the second aspect of the present invention includes a microwave oven cavity 80, the above-described semiconductor power source 50 for a microwave oven, a control system 51, and a DC power source 52.
- the semiconductor power source 50 is used to generate microwaves of a preset frequency.
- the microwave of the preset frequency ranges from 2400 MHz to 2500 MHz.
- a control system 51 is coupled to the semiconductor power source 50 for regulating the output power and heating frequency of the semiconductor power source 50 to control the heating of the microwave oven. Food within the cavity 80.
- a DC power source 52 is coupled to the semiconductor power source 50 and the control system 51 for powering the semiconductor power source 50 and the control system 51, respectively.
- the power supply 40 in FIG. 2 is rectified to obtain a DC power supply 52.
- the DC power supply 52 outputs a variable DC voltage DC 0-32V to the semiconductor power source 50, and the DC power supply 52 is simultaneously output.
- the DC voltage DC 12V and the DC voltage DC 5V are supplied to the control system 51, and the control system 51 outputs a voltage adjustment signal D to the DC power source 52 to adjust the voltage value of the variable DC voltage DC 0-32V output from the DC power source 52, thereby controlling the semiconductor.
- the output power of the power source 50 is supplied to the control system 51, and the control system 51 outputs a voltage adjustment signal D to the DC power source 52 to adjust the voltage value of the variable DC voltage DC 0-32V output from the DC power source 52, thereby controlling the semiconductor.
- the required voltage of the semiconductor power source 50 is DC 0-32V.
- the microwave output power of the semiconductor microwave source 50 can be adjusted, and the power of the microwave oven can be steplessly adjusted.
- the microwave generating structure of the semiconductor power source 50 is simplified, the cost is reduced, the reliability performance is improved, and the structure is simple and reasonable, the manufacturing cost is low, and the reliability is good.
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Abstract
一种微波炉的半导体功率源(50)及微波炉,其中的半导体功率源(50)包括偏压及控制模块(41)、功率检测模块(42)、功率合成器(43)和多个LDMOS管(44、45、······N)。多个LDMOS管(44、45、……N)的栅极并联后与偏压及控制模块(41)相连,多个LDMOS管(44、45、……N)的源极共地,多个LDMOS管(44、45、……N)的漏极并联后与功率合成器(43)相连,多个LDMOS管(44、45、……N)根据自振荡电路产生预设频率的微波;功率合成器(43)用于调整多个LDMOS管(44、45、……N)的输出阻抗;功率检测模块(42)用于检测半导体功率源(50)的反射功率和输出功率并生成检测信号发送至微波炉的控制***(51);偏压及控制模块(41)用于为多个LDMOS管(44、45、……N)提供偏压以调节半导体功率源(50)的加热频率和输出频率。该半导体功率源(50)的结构简单、制造成本低、可靠性好。
Description
微波炉及用于微波炉的半导体功率源
技术领域
本发明涉及半导体微波技术领域, 特别涉及一种用于微波炉的半导体 功率源以及一种具有半导体功率源的微波炉。 背景技术
目前的磁控管微波炉如图 1所示, 其包括磁控管 Γ、 微波炉腔体 2,、 控制*** 3,和电源 4,, 该磁控管微波炉具有成本高、 体积大、 重量大和电 压高等问题, 而磁控管本身具有功率小、 输出效率低、 工作寿命短、 材料 标准要求高、 制造难度大等问题, 故而限制了微波炉的进一步发展。
磁控管微波炉的主要元器件包括磁控管、 高压变压器、 高压电容、 高 压二极管、 矩形波导、 腔体、 炉门和控制部分等。 交流电源经高压变压器 为磁控管提供灯丝电压。 交流电源经高压变压器、 高压电容和高压二极管 升压后, 变成直流脉动高压, 磁控管才能发出微波。 微波经矩形波导进入 微波炉的腔体后, 与腔体内的被加热物质发生作用, 实现微波快速加热。
目前除了磁控管能够发出微波之外, 还有半导体器件能够发出微波。 现有的半导体的微波技术主要应用在通信上, 而用于通信的微波与用于加 热的微波主要区别是微波的频段不同。
随着半导体的微波技术不断发展, 目前半导体的微波效率越来越高、 成本越来越低、 重量越来越轻、 单位体积的功率密度越来越大, 其在微波 炉上的应用是半导体微波技术发展的必然趋势。
然而, 目前半导体微波炉研究的微波功率源, 都是釆用源、 放大原理, 其在实际的应用中存在成本高、 ***较复杂, 尤其是源部分需要使用专用 模块, 自主设计开发困难等缺点, 并且放大部分是釆用两级放大, 即初次 小信号放大和二次放大。
如图 2和图 3所示, 现有半导体微波炉包括半导体功率源 10、 微波炉 腔体 20、 控制*** 30和电源 40。 电源 40为半导体功率源 10供电, 半导 体功率源 10发出 2400MHz〜2500MHz微波馈入到微波炉腔体 20内 , 加热 波炉腔体 20内的食物。 如图 3所示, 普通的半导体功率源包括电源 40、 信号源 13、 一级放大器 11 和二级放大器 12 , 其中, 信号源 13 产生 2400MHz〜2500MHz微波信号,输出到一级放大器 11。 2400MHz〜2500MHz 微波信号经一级放大器 11后, 放大为小功率微波信号, 再输入到二级放大 器 12, 得到大功率微波输出。 其中, 微波输出功率大小、 品质取决于一、 二级放大器的性能, 频率大小取决于信号源 13发出频率的高低。 源、 放大 原理的半导体微波源更适合通信行业对微波信号的要求, 而对于用于加热 的 2400MHz〜2500MHz微波信号, 则微波线性度等都不做非常高的要求。
综上所述, 磁控管微波炉存在成本高、 体积大、 重量大和电压高等缺 点, 而现有的半导体微波炉存在成本高、 ***较复杂、 自主设计开发困难 等缺点。 发明内容
本发明的目的旨在至少解决上述的技术问题之一。
为此, 本发明的目的在于提出一种用于微波炉的半导体功率源以及提 出一种具有该半导体功率源的微波炉, 其结构简单合理、 制作成本低、 可 靠性好, 以克服现有技术中的不足之处。
为达到上述目的, 本发明第一方面实施例提出了一种用于微波炉的半 导体功率源, 所述半导体功率源包括偏压及控制模块、 功率检测模块、 功 率合成器和多个 LDMOS管, 其中, 所述多个 LDMOS管的栅极并联后与 所述偏压及控制模块相连, 所述多个 LDMOS 管的源极共地, 所述多个 LDMOS管的漏极并联后与所述功率合成器相连,所述多个 LDMOS管根据 自振荡电路产生预设频率的微波; 所述功率合成器, 用于调整所述多个
LDMOS 管的输出阻抗 , 并控制所述多个 LDMOS 管输出的 波的相位相 同; 所述功率检测模块, 用于检测所述半导体功率源的反射功率和输出功 率, 根据所述反射功率和输出功率生成检测信号并将所述检测信号发送至 所述微波炉的控制***; 所述偏压及控制模块, 用于为所述多个 LDMOS 管提供偏压, 并在所述微波炉的控制***的控制下通过调节所述偏压以调 节所述半导体功率源的加热频率和输出功率。 大大降低了成本, 并且提高了可靠性。
在本发明的一个实施例中, 所述控制***输出频率调整信号至所述偏 压及控制模块以调节所述半导体功率源的加热频率。
并且, 所述控制***还输出电压调节信号控制所述半导体功率源的输 出功率。
进一步地, 在本发明的一个实施例中, 所述功率检测模块包括: 第一 电阻, 所述第一电阻的一端与所述反射功率的信号端相连; 第一控制芯片, 所述第一控制芯片的第三管脚与所述第一电阻的另一端相连, 所述第一控 制芯片的第四管脚和第五管脚相连后接地, 所述第一控制芯片的第二管脚 接地; 第二电阻, 所述第二电阻的一端与所述第一电阻的一端相连, 所述 第二电阻的另一端与所述第一控制芯片的第六管脚相连; 第三电阻, 所述 第三电阻的一端接地, 所述第三电阻的另一端与所述第一控制芯片的第一 管脚相连; 第一电容, 所述第一电容的一端分别与所述第一控制芯片的第 六管脚和所述第二电阻的另一端相连; 第四电阻, 所述第四电阻的一端与 所述第一电容的另一端相连, 所述第四电阻的另一端分别与所述第一控制 芯片的第一管脚和所述第三电阻的另一端相连。
并且, 所述功率检测模块还包括: 第二控制芯片, 所述第二控制芯片 的第四管脚和第五管脚相连后接地, 所述第二控制芯片的第二管脚接地; 第二电容, 所述第二电容的一端与所述第二控制芯片的第六管脚相连; 第
五电阻, 所述第五电阻的一端与所述第二电容的另一端相连, 所述第五电 阻的另一端与所述第二控制芯片的第一管脚相连; 第六电阻, 所述第六电 阻的一端与所述第二控制芯片的第一管脚相连, 所述第六电阻的另一端接 地; 第七电阻, 所述第七电阻的一端与所述第二控制芯片的第六管脚相连, 所述第七电阻的另一端与所述输出功率的信号端相连; 第八电阻, 所述第 八电阻的一端与所述第二控制芯片的第三管脚相连, 所述第八电阻的另一 端与第七电阻的另一端相连。
在本发明的一个实施例中, 所述偏压及控制模块进一步包括: 串联的 第九电阻和稳压二极管, 所述稳压二极管的正极端接地, 所述第九电阻的 一端与所述半导体功率源的直流电源输入端相连; 第三电容, 所述第三电 容的一端与所述第九电阻的一端相连, 所述第三电容的另一端接地; 可变 电容, 所述可变电容的一端与所述第九电阻的一端相连, 所述可变电容的 另一端接地, 所述可变电容的控制端与所述控制***相连; 三极管, 所述 三极管的发射极与所述第九电阻和稳压二极管之间的节点相连; 第十电阻, 所述第十电阻的一端与所述控制***相连, 所述第十电阻的另一端与所述 三极管的基极相连; 可变电阻, 所述可变电阻的一端与所述三极管的集电 极相连, 所述可变电阻的另一端接地; 第十一电阻, 所述第十一电阻的一 端与所述可变电阻的控制端相连, 所述第十一电阻的另一端分别与所述多 个 LDMOS管的栅极相连。
为达到上述目的, 本发明第二方面实施例还提出的微波炉, 包括: 微 波炉腔体; 上述的用于微波炉的半导体功率源, 用于产生预设频率的微波; 控制***, 所述控制***与所述半导体功率源相连, 用于调节所述半导体 功率源的输出功率和加热频率以控制加热所述微波炉腔体内的食物; 直流 电源, 所述直流电源分别与所述半导体功率源和所述控制***相连, 用于 给所述半导体功率源和所述控制***供电。
根据本发明实施例的微波炉, 对半导体功率源的微波发生结构进行了
简化, 降低了成本, 提升了可靠性能, 具有结构简单合理、 制作成本低、 可靠性好等优点。
在本发明的一个实施例中, 所述控制***输出电压调节信号调节所述 直流电源的输出电压以控制所述半导体功率源的输出功率。
其中, 在本发明的一个示例中, 所述预设频率的微波的范围为 2400 MHz -2500MHz。
本发明附加的方面和优点将在下面的描述中部分给出, 部分将从下面 的描述中变得明显, 或通过本发明的实践了解到。 附图说明
本发明上述的和 /或附加的方面和优点从下面结合附图对实施例的描 述中将变得明显和容易理解, 其中:
图 1为现有的磁控管微波炉的结构示意图;
图 2为现有的半导体微波炉的控制原理图;
图 3为现有的普通放大原理的半导体功率源的原理图; 图 5为根据本发明一个实施例中微波炉的控制***的原理图; 图 6A 为根据本发明实施例的功率检测模块对反射功率检测部分的电 路图;
图 6B 为根据本发明实施例的功率检测模块对输出功率检测部分的电 路图;
图 7为根据本发明实施例的偏压及控制模块的电路图; 以及 意图。
附图标记:
在磁控管微波炉中: 磁控管 Γ、微波炉腔体 2,、控制*** 3,和电源 4,;
在现有的半导体微波炉中: 半导体功率源 10、 微波炉腔体 20、 控制*** 30和电源 40, 信号源 13、 一级放大器 11和二级放大器 12; 本发明的半导 体功率源 50中: 偏压及控制模块 41、 功率检测模块 42、 功率合成器 43和 多个 LDMOS管 (44、 45 N ) , 第一电阻 Rl、 第一控制芯片 Ul、 第 二电阻 R2、 第三电阻 R3、 第一电容和第四电阻 R4, 第二控制芯片 U2、 第 二电容 C2、 第五电阻 R5、 第六电阻 R6、 第七电阻 R7和第八电阻 R8, 第 九电阻 R9、 稳压二极管 Dl、 第三电容 C3、 可变电容 C4、 三极管 Ql、 第 十电阻 R10、 可变电阻 R12和第十一电阻 R11 ; 在本发明的 波炉中: 微 波炉腔体 80、 半导体功率源 50、 控制*** 51和直流电源 52。 具体实施方式
下面详细描述本发明的实施例, 所述实施例的示例在附图中示出, 其 中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功 能的元件。 下面通过参考附图描述的实施例是示例性的, 仅用于解释本发 明, 而不能解释为对本发明的限制。 构。 为了简化本发明的公开, 下文中对特定例子的部件和设置进行描述。 当然, 它们仅仅为示例, 并且目的不在于限制本发明。 此外, 本发明可以 在不同例子中重复参考数字和 /或字母。 这种重复是为了简化和清楚的目 的, 其本身不指示所讨论各种实施例和 /或设置之间的关系。 此外, 本发明 提供了的各种特定的工艺和材料的例子, 但是本领域普通技术人员可以意 识到其他工艺的可应用于性和 /或其他材料的使用。 另外, 以下描述的第一 特征在第二特征之 "上" 的结构可以包括第一和第二特征形成为直接接触 的实施例, 也可以包括另外的特征形成在第一和第二特征之间的实施例, 这样第一和第二特征可能不是直接接触。
在本发明的描述中, 需要说明的是, 除非另有规定和限定, 术语 "安
装" 、 "相连" 、 "连接" 应做广义理解, 例如, 可以是机械连接或电连 接, 也可以是两个元件内部的连通, 可以是直接相连, 也可以通过中间媒 介间接相连, 对于本领域的普通技术人员而言, 可以根据具体情况理解上 述术语的具体含义。
参照下面的描述和附图, 将清楚本发明的实施例的这些和其他方面。 在这些描述和附图中,具体公开了本发明的实施例中的一些特定实施方式, 来表示实施本发明的实施例的原理的一些方式, 但是应当理解, 本发明的 实施例的范围不受此限制。 相反, 本发明的实施例包括落入所附加权利要 求书的精神和内涵范围内的所有变化、 修改和等同物。
率源以及具有该半导体功率源的微波炉。
如图 4所示, 本发明第一方面实施例提出的用于微波炉的半导体功率 源包括偏压及控制模块 41、功率检测模块 42、功率合成器 43和多个 LDMOS ( Lateral Diffused Metal Oxide Semiconductor, 横向扩散金属氧化物半导 体) 管 (44、 45 N ) 。 其中, N的取值范围可以为 44-54。
在本发明的实施例中, 如图 4所示, 多个 LDMOS管(44、 45 N ) 的栅极并联后与偏压及控制模块 41相连, 多个 LDMOS管 (44、 45
N ) 的源极共地, 多个 LDMOS管 (44、 45 N ) 的漏极并联后与功率 合成器 43相连, 多个 LDMOS管 (44、 45 N )根据自振荡电路产生 预设频率的微波。 在本发明的一个示例中, 预设频率的微波的范围为 2400 MHz -2500MHz。
其中, 多个 LDMOS管(44、 45 N )的输出端通过电容与功率合 成器 43相连, 多个 LDMOS管 (44、 45 N ) 并联后输出阻抗发生变 化, 功率合成器 43用于调整多个 LDMOS管 (44、 45 N ) 的输出阻 抗, 例如功率合成器 43能够实现将阻抗调整为 50欧输出, 同时并控制多 个 LDMOS管 (44、 45 N )输出的 波的相位达到相同后并到一起,
有利于减少损耗。功率检测模块 42用于检测半导体功率源的反射功率和输 出功率, 根据反射功率和输出功率生成检测信号并将检测信号发送至微波 炉的控制***。而偏压及控制模块 41用于为多个 LDMOS管(44、 45
N )提供偏压, 并在微波炉的控制***的控制下通过调节偏压以调节半导体 功率源的加热频率和输出功率。
在本发明的一个实施例中, 结合图 4和图 5 , 微波炉的控制*** 51输 出半导体功率源关断信号 C、 半导体功率源调整信号 E至偏压及控制模块 41 以调节半导体功率 50 的加热频率, 能够实现加热频率在 2400 MHz-2500MHz之间变化。 如图 5所示, 微波炉的控制*** 51还输出电压 调节信号 D调节直流电源 52的输出电压以控制半导体功率源 50的输出功 率。 其中, 输出电压在 DC0-32V之间变化。 此外, 功率检测模块 42输出 半导体功率源输出功率检测信号 A和半导体功率源反射功率检测信号 B至 微波炉的控制*** 51。
进一步地, 在本发明的一个实施例中, 如图 6A 所示, 功率检测模块 42对反射功率检测部分包括第一电阻 R1、第一控制芯片 U1、第二电阻 R2、 第三电阻 R3、 第一电容和第四电阻 R4。 其中, 第一电阻 R1的一端与反射 功率的信号端相连。 第一控制芯片 U1的第三管脚 3与第一电阻 R1的另一 端相连, 第一控制芯片 U1的第四管脚 4和第五管脚 5相连后接地, 第一控 制芯片 U1的第二管脚 2接地。 第二电阻 R2的一端与第一电阻 R1的一端 相连, 第二电阻 R2的另一端与第一控制芯片 U1的第六管脚 6相连。 第三 电阻 R3的一端接地, 第三电阻 R3的另一端与第一控制芯片 U1的第一管 脚 1相连。 第一电容 C1的一端分别与第一控制芯片 U1的第六管脚 6和第 二电阻 R2的另一端相连, 第四电阻 R4的一端与第一电容 C1的另一端相 连, 第四电阻 R4的另一端分别与第一控制芯片 U1的第一管脚 1和第三电 阻 R3的另一端相连。
在本实施例中, 如图 6B所示, 功率检测模块 42对输出功率的检测部
分还包括第二控制芯片 U2、 第二电容 C2、 第五电阻 R5、 第六电阻 R6、 第 七电阻 R7和第八电阻 R8。 其中, 第二控制芯片 U2的第四管脚 4和第五 管脚 5相连后接地, 第二控制芯片 U2的第二管脚 2接地。 第二电容 C2的 一端与第二控制芯片 U2的第六管脚 6相连, 第五电阻 R5的一端与第二电 容 C2的另一端相连, 第五电阻 R5的另一端与第二控制芯片 U2的第一管 脚 1相连。 第六电阻 R6的一端与第二控制芯片 U2的第一管脚 1相连, 第 六电阻 R6的另一端接地。 第七电阻 R7的一端与第二控制芯片 U2的第六 管脚 6相连, 第七电阻 R7 的另一端与输出功率的信号端相连。 第八电阻 R8的一端与第二控制芯片 U2的第三管脚 3相连, 第八电阻 R8的另一端 与第七电阻 R7的另一端相连。
功率检测模块 42通过定向耦合原理,耦合每个 LDMOS管的输出功率 和反射功率,再通过控制芯片 U1和 U2,转换成输出电压供给控制*** 51。
在本发明的一个实施例中, 如图 7所示, 偏压及控制模块 41进一步包 括第九电阻 R9、 稳压二极管 Dl、 第三电容 C3、 可变电容 C4、 三极管 Ql、 第十电阻 R10、 可变电阻 R12和第十一电阻 Rl l。
其中, 第九电阻 R9和稳压二极管 D1 串联连接, 并且稳压二极管 D1 的正极端接地, 第九电阻 R9的一端与半导体功率源 50的直流电源输入端 (例如 +32V )相连。 第三电容 C3的一端与第九电阻 R9的一端相连, 第三 电容 C3的另一端接地, 可变电容 C4的一端与第九电阻 R9的一端相连, 可变电容 C4的另一端接地, 可变电容 C4的控制端与控制*** 51 (半导体 功率源调整信号 E )相连。 三极管 Q1的发射极与第九电阻 R9和稳压二极 管 D1之间的节点相连, 第十电阻 R10的一端与控制*** 51 (半导体功率 源关断信号 C )相连, 第十电阻 R10的另一端与三极管 Q1 的基极相连, 可变电阻 R12的一端与三极管 Q1的集电极相连, 可变电阻 R12的另一端 接地。 第十一电阻 R11的一端与可变电阻 R12的控制端相连, 第十一电阻 R11的另一端分别与多个 LDMOS管的栅极相连。
具体地, 在本实施例中, 如图 7所示, 通过稳压二极管 D1和其串联的 电阻 R9将 32V直流电源输入转换为 5V, 再通过可变电阻 R12, 实现 2.5V 左右的电压输出, 以供给每个 LDMOS管的栅极。 同时, 在稳压二极管 D1 和其串联的电阻 R9的 5V电路输出中串入三极管 Q1 , 通过控制*** 51输 出半导体功率源关断信号 c控制三极管 Q1 的开关, 实现对供给 LDMOS 管栅极电压控制, 控制每个 LDMOS管的开关。 此外, 在偏压及控制模块 41的输入端, 32V直流电源对地之间串入的可变数字可变电容 C4, 通过控 制*** 51输出半导体功率源调整信号 E调节可变电容 C4的变化, 从而调 整半导体功率源的工作频率。
在本发明的实施例中, 偏压及控制模块 41和功率检测模块 42均釆用 简单的元器件例如电阻、 电容等, 电路结构简单, 损耗小, 大大降低了成 本, 还提高了可靠性。
简言之, 本发明实施例中的基于振荡微波发生原理的半导体功率源 50 的工作原理为: LDMOS管通过自振荡电路产生频率 2450MHz士 50MHz的 微波, 微波功率的大小由 LDMOS管的功率大小和数量决定, 通过调节自 振荡电路的可变电容值, 也可改变频率, 根据微波炉中需要加热的食物的 厚度、 加热状态等实际情况下的腔体驻波比大小, 在 2400MHz-2500MHz 范围内选择驻波最小频率进行加热。 加简单, 大大降低了成本, 并且提高了可靠性。
如图 8所示,本发明第二方面实施例提出的微波炉包括微波炉腔体 80、 上述的用于微波炉的半导体功率源 50、 控制*** 51和直流电源 52。
其中, 半导体功率源 50用于产生预设频率的微波。 在本发明的一个示 例中 , 预设频率的微波的范围为 2400 MHz -2500MHz„
在本发明的实施例中, 如图 8所示, 控制*** 51与半导体功率源 50 相连,用于调节半导体功率源 50的输出功率和加热频率以控制加热微波炉
腔体 80内的食物。 直流电源 52分别与半导体功率源 50和控制*** 51相 连, 用于给半导体功率源 50和控制*** 51供电。 其中, 在本发明的实施 例中, 图 2中的电源 40经过整流后得到直流电源 52, 该直流电源 52输出 可变直流电压 DC 0-32V供给半导体功率源 50, 直流电源 52同时又分别输 出直流电压 DC 12V和直流电压 DC 5V供给控制*** 51 , 而控制*** 51 输出电压调节信号 D给直流电源 52 , 以调节直流电源 52输出的可变直流 电压 DC 0-32V的电压值, 从而控制半导体功率源 50的输出功率。
也就是说, 半导体功率源 50所需电压为直流 0-32V, 通过调节输入电 压的高低, 能够调节半导体微波源 50的微波输出功率大小, 实现微波炉的 功率无级可调。
根据本发明实施例的微波炉,对半导体功率源 50的微波发生结构进行 了简化, 降低了成本, 提升了可靠性能, 具有结构简单合理、 制作成本低、 可靠性好等优点。
在本说明书的描述中, 参考术语 "一个实施例" 、 "一些实施例" 、 "示例" 、 "具体示例" 、 或 "一些示例" 等的描述意指结合该实施例或 示例描述的具体特征、 结构、 材料或者特点包含于本发明的至少一个实施 例或示例中。 在本说明书中, 对上述术语的示意性表述不一定指的是相同 的实施例或示例。 而且, 描述的具体特征、 结构、 材料或者特点可以在任 何的一个或多个实施例或示例中以合适的方式结合。
尽管已经示出和描述了本发明的实施例, 对于本领域的普通技术人员 而言, 可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例 进行多种变化、 修改、 替换和变型, 本发明的范围由所附权利要求及其等 同限定。
Claims
1、 一种用于微波炉的半导体功率源, 其特征在于, 所述半导体功率源 包括偏压及控制模块、 功率检测模块、 功率合成器和多个 LDMOS管, 其 中,
所述多个 LDMOS管的栅极并联后与所述偏压及控制模块相连, 所述 多个 LDMOS管的源极共地, 所述多个 LDMOS管的漏极并联后与所述功 率合成器相连, 所述多个 LDMOS管根据自振荡电路产生预设频率的微波; 所述功率合成器, 用于调整所述多个 LDMOS管的输出阻抗, 并控制 所述多个 LDMOS管输出的 波的相位相同;
所述功率检测模块, 用于检测所述半导体功率源的反射功率和输出功 率, 根据所述反射功率和输出功率生成检测信号并将所述检测信号发送至 所述微波炉的控制***;
所述偏压及控制模块, 用于为所述多个 LDMOS管提供偏压, 并在所 述微波炉的控制***的控制下通过调节所述偏压以调节所述半导体功率源 的加热频率和输出功率。
2、 如权利要求 1所述的用于微波炉的半导体功率源, 其特征在于, 所 述控制***输出频率调整信号至所述偏压及控制模块以调节所述半导体功 率源的力口热频率。
3、 如权利要求 1所述的用于微波炉的半导体功率源, 其特征在于, 所 述控制***输出电压调节信号控制所述半导体功率源的输出功率。
4、 如权利要求 1所述的用于微波炉的半导体功率源, 其特征在于, 所 述功率检测模块进一步包括:
第一电阻, 所述第一电阻的一端与所述反射功率的信号端相连; 第一控制芯片, 所述第一控制芯片的第三管脚与所述第一电阻的另一 端相连, 所述第一控制芯片的第四管脚和第五管脚相连后接地, 所述第一
控制芯片的第二管脚接地;
第二电阻, 所述第二电阻的一端与所述第一电阻的一端相连, 所述第 二电阻的另一端与所述第一控制芯片的第六管脚相连;
第三电阻, 所述第三电阻的一端接地, 所述第三电阻的另一端与所述 第一控制芯片的第一管脚相连;
第一电容, 所述第一电容的一端分别与所述第一控制芯片的第六管脚 和所述第二电阻的另一端相连;
第四电阻, 所述第四电阻的一端与所述第一电容的另一端相连, 所述 第四电阻的另一端分别与所述第一控制芯片的第一管脚和所述第三电阻的 另一端相连。
5、 如权利要求 1所述的用于微波炉的半导体功率源, 其特征在于, 所 述功率检测模块还包括:
第二控制芯片,所述第二控制芯片的第四管脚和第五管脚相连后接地, 所述第二控制芯片的第二管脚接地;
第二电容,所述第二电容的一端与所述第二控制芯片的第六管脚相连; 第五电阻, 所述第五电阻的一端与所述第二电容的另一端相连, 所述 第五电阻的另一端与所述第二控制芯片的第一管脚相连;
第六电阻,所述第六电阻的一端与所述第二控制芯片的第一管脚相连, 所述第六电阻的另一端接地;
第七电阻,所述第七电阻的一端与所述第二控制芯片的第六管脚相连, 所述第七电阻的另一端与所述输出功率的信号端相连;
第八电阻,所述第八电阻的一端与所述第二控制芯片的第三管脚相连, 所述第八电阻的另一端与第七电阻的另一端相连。
6、 如权利要求 2所述的用于微波炉的半导体功率源, 其特征在于, 所 述偏压及控制模块进一步包括:
串联的第九电阻和稳压二极管, 所述稳压二极管的正极端接地, 所述
第九电阻的一端与所述半导体功率源的直流电源输入端相连; 第三电容, 所述第三电容的一端与所述第九电阻的一端相连, 所述第 三电容的另一端接地;
可变电容, 所述可变电容的一端与所述第九电阻的一端相连, 所述可 变电容的另一端接地, 所述可变电容的控制端与所述控制***相连;
三极管, 所述三极管的发射极与所述第九电阻和稳压二极管之间的节 点相连;
第十电阻, 所述第十电阻的一端与所述控制***相连, 所述第十电阻 的另一端与所述三极管的基极相连;
可变电阻, 所述可变电阻的一端与所述三极管的集电极相连, 所述可 变电阻的另一端接地;
第十一电阻, 所述第十一电阻的一端与所述可变电阻的控制端相连, 所述第十一电阻的另一端分别与所述多个 LDMOS管的栅极相连。
7、 一种微波炉, 其特征在于, 包括:
微波炉腔体;
如权利要求 1-6任一项所述的用于微波炉的半导体功率源, 用于产生 预设频率的 波;
控制***, 所述控制***与所述半导体功率源相连, 用于调节所述半 导体功率源的输出功率和加热频率以控制加热所述微波炉腔体内的食物; 直流电源, 所述直流电源分别与所述半导体功率源和所述控制***相 连, 用于给所述半导体功率源和所述控制***供电。
8、 如权利要求 7所述的微波炉, 其特征在于, 所述控制***输出电压 调节信号调节所述直流电源的输出电压以控制所述半导体功率源的输出功 率。
9、 如权利要求 7所述的微波炉, 其特征在于, 所述预设频率的微波的 范围为 2400 MHz -2500MHz。
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