WO2013161860A1 - Semiconductor non-destructive inspection device and semiconductor non-destructive inspection method - Google Patents
Semiconductor non-destructive inspection device and semiconductor non-destructive inspection method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
- G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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- H—ELECTRICITY
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Definitions
- the present invention provides a non-destructive electronic property information of each layer of a laminated structure and an electronic property information of each interlayer interface by irradiating a laminated structure including a semiconductor layer such as a semiconductor wafer or a semiconductor device with a laser beam.
- the present invention relates to a semiconductor non-destructive inspection apparatus and a semiconductor non-destructive inspection method that are obtained in the above.
- LSI miniaturization technology has been advanced by scaling (proportional reduction) so far, but it is difficult to further miniaturize LSI with scaling technology alone. Therefore, as a next-generation semiconductor technology, post-scaling technology capable of further miniaturization of LSI has been studied, and specifically, carrier mobility control by strained Si and the like can be cited as one of them.
- a next-generation semiconductor device is realized by such a next-generation semiconductor technology, more advanced semiconductor inspection technology and semiconductor evaluation technology than before are also required.
- a conventionally known inspection apparatus and inspection method for inspecting a semiconductor wafer, a semiconductor device (semiconductor integrated circuit), etc. a technique for performing non-destructive inspection using a laser beam is known (for example, Patent Documents). 1 to 4).
- Patent Document 1 and Patent Document 2 the light emitted from the SiC wafer is detected by a spectroscope by irradiating the SiC wafer made of a silicon carbide (SiC) semiconductor with a laser beam, and based on the measured light intensity.
- a spectroscope by irradiating the SiC wafer made of a silicon carbide (SiC) semiconductor with a laser beam, and based on the measured light intensity.
- Patent Document 3 in a semiconductor device (semiconductor integrated circuit) that maintains a predetermined voltage application state, an ultrashort pulse laser is irradiated onto a two-dimensional circuit of the semiconductor device, and electromagnetic waves emitted from the irradiation position are detected, An integrated circuit disconnection inspection method and apparatus for detecting disconnection of an irradiation position in a non-contact manner based on the presence or absence or intensity of the electromagnetic wave is disclosed.
- Patent Document 4 an electric field distribution is detected from a time waveform of an electromagnetic wave radiated from an irradiation position by irradiating an ultrashort pulse laser beam to a place where a built-in electric field is generated such as a pn junction or a metal semiconductor interface in a semiconductor device.
- a method and apparatus for performing fault diagnosis is disclosed.
- Patent Documents 1 and 2 when light emission from the semiconductor wafer due to laser light irradiation does not occur, that is, in the case of a semiconductor wafer having no defects on the semiconductor surface, details other than the presence or absence of defects on the semiconductor surface. The inspection could not be performed.
- Patent Document 3 it is necessary to provide an electrode structure for applying a voltage to the semiconductor device and to hold the semiconductor device in a predetermined voltage application state when performing the inspection. For example, it could not be applied to a semiconductor wafer itself used for manufacturing a semiconductor device.
- the conventional semiconductor inspection technology when electromagnetic waves are generated simultaneously from several places in the depth direction (stacking direction) of a laminated structure such as a semiconductor wafer, the electromagnetic waves cannot be analyzed, and the inspection object is also an electrode. The structure and the pn junction are limited, and the semiconductor inspection apparatus lacks versatility. Further, in realizing the next generation semiconductor technology (post-scaling technology), it is necessary to improve the semiconductor inspection technology. For example, in the case of a semiconductor wafer having a laminated structure, the depth direction of the semiconductor wafer (lamination direction) It is desirable to obtain electronic physical property information on each layer and electronic physical property information on each interlayer interface. However, the conventional semiconductor inspection technology has not been able to obtain electronic physical property information of each layer of the multilayer structure and electronic physical property information at each interlayer interface in a nondestructive manner.
- the present invention has been made to solve the above-described problems. From a laminated structure including a semiconductor layer such as a semiconductor wafer or a semiconductor device, information on electronic physical properties of each layer of the laminated structure or electrons at each interlayer interface is provided. It is an object of the present invention to provide a semiconductor nondestructive inspection apparatus and a semiconductor nondestructive inspection method capable of acquiring physical property information.
- a semiconductor non-destructive inspection apparatus that irradiates a laminated structure including a semiconductor layer with a pulsed laser beam having a predetermined wavelength and inspects the laminated structure non-destructively by an electromagnetic wave emitted from the pulse laser light irradiation position.
- Laser beam splitting means for splitting the pulse laser beam into probe light and pump light; Means for radiating the electromagnetic wave from the pump light irradiation position by irradiating the laminated structure with the pump light; A detection element that receives the electromagnetic wave emitted from the pump light irradiation position and generates a current corresponding to the amplitude intensity of the incident electromagnetic wave; A current amplifier connected to the detection element and converting a current generated in the detection element into a voltage; A lock-in amplifier that is connected to the current amplifier and converts the voltage converted by the current amplifier into a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of the electromagnetic wave; A time delay means arranged in the optical path of the probe light and capable of periodically delaying the time that the electromagnetic wave is incident on the detection element; By comparing the time-varying voltage signal with the time-varying voltage signal of each single-layer structure constituting the stacked structure prepared in advance as reference data, the electrons of each layer of the stacked structure are compared. Physical property information acquisition means for
- the frequency component of the voltage signal that changes with time of the stacked structure and the frequency component of the voltage signal that changes with time of each single-layer structure that forms the stacked structure prepared in advance as reference data are calculated.
- the physical property information acquisition means compares the time-dependent frequency signal frequency component of the multilayer structure with the time-varying voltage signal frequency component of each of the single-layer structures. It is a semiconductor nondestructive inspection apparatus that acquires electronic physical property information of each layer of a structure or electronic physical property information of each interlayer interface.
- the semiconductor nondestructive inspection apparatus further includes wavelength changing means for changing a center wavelength of the pulse laser beam.
- the semiconductor nondestructive inspection apparatus further includes a scanning unit that irradiates the pump structure with the pump light and performs two-dimensional scanning.
- the semiconductor nondestructive inspection apparatus further includes a mechanism for rotating the polarization direction of the pulsed laser light to an arbitrary angle.
- the laminated structure including the semiconductor layer is irradiated with pulsed laser light having a predetermined wavelength, and the laminated structure is made non-magnetic by electromagnetic waves radiated from the irradiation position of the pulsed laser light.
- a semiconductor nondestructive inspection method for inspecting by destruction A splitting step of splitting the pulsed laser light into probe light and pump light; An incident step of irradiating the laminated structure with the pump light, condensing electromagnetic waves radiated from the laminated structure, and entering the detection element; A probe light irradiation step of irradiating the detection element in synchronization with the incidence of the pulsed electromagnetic wave emitted by the pump light while delaying the probe light at a predetermined period of time, By detecting the amplitude intensity of the pulse electromagnetic wave due to the pump light incident on the detection element at the time of irradiation of the probe light, obtaining the amplitude intensity of the plurality of pulse electromagnetic waves having different delay times in the laminated structure, A time-series waveform generating step for generating a time-series waveform of the pulse electromagnetic wave in the laminated structure; By comparing the time-series waveform belonging to the laminated structure with the time-series waveform belonging to each single-layer structure constituting the laminated structure prepared
- a signal including electronic physical property information of each layer of the laminated structure and electronic physical property information of each interlayer interface is obtained in a non-destructive non-contact manner. can do.
- FIG. 1 Schematic which shows the semiconductor nondestructive inspection apparatus which concerns on one Embodiment of this invention.
- FIG. 1 The figure which normalized each time series waveform shown in FIG.
- FIG. 1 shows an embodiment of a semiconductor nondestructive inspection apparatus according to the present invention.
- the semiconductor nondestructive inspection apparatus 1 irradiates a pulsed laser beam having a predetermined wavelength onto a semiconductor wafer 5 that is a laminated structure including a semiconductor layer, and analyzes a pulsed electromagnetic wave 10 emitted from the pulsed laser beam irradiation position.
- This is a nondestructive inspection apparatus for inspecting the semiconductor wafer 5 in a nondestructive and noncontact manner.
- the “laminated structure including a semiconductor layer” is a stacked structure including at least one semiconductor layer, and refers to, for example, a semiconductor wafer, a semiconductor device, a semiconductor element, or the like having a stacked structure. .
- the semiconductor nondestructive inspection apparatus 1 includes a laser beam splitting means (beam splitter 14) that splits a pulse laser beam 9 irradiated from a pulse laser light source 2 into a probe beam L1 and a pump beam L2, and one surface of the semiconductor wafer 5
- the means for radiating the pulse electromagnetic wave 10 from the irradiation position of the pump light L2 (pulse laser light source 2)
- the semiconductor wafer 5 is irradiated with the pump light L2
- a scanning means scanning table 7, pulsed laser light source 2) for two-dimensional scanning, and amplitude intensity of the pulsed electromagnetic wave 10 emitted from the irradiation position of the pump light L2 on the semiconductor wafer 5 are detected, and the pulsed electromagnetic wave 10 Detecting / converting means (detecting / converting device 4) for converting to a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of Time delay means 15 arranged in the
- the detection / conversion means receives the pulse electromagnetic wave 10 emitted from the irradiation position of the pump light L2, and responds to the amplitude intensity of the incident pulse electromagnetic wave 10.
- a detection element 19 that generates a current
- a current amplifier 27 that is connected to the detection element 19 and converts the current generated in the detection element 19 into a voltage
- a lock-in amplifier 28 for converting the voltage into a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of the pulse electromagnetic wave 10.
- the time delay means 15 is arranged in the optical path of the probe light L1, and can periodically delay the time that the pulse electromagnetic wave 10 is incident on the detection element 19.
- the “electronic physical property information” in the present invention is information such as physical property values relating to solid electronic physical properties in the “laminated structure including a semiconductor layer” such as the semiconductor wafer described above.
- Such “electronic property information” is not particularly limited, but for example, semiconductor carrier concentration, carrier (electron, hole) mobility, carrier lifetime, atomic arrangement (information on crystal orientation), effective Examples include mass (m * ) and interlayer electric field distribution.
- E emission is the electric field vector of the electromagnetic wave
- J is the photocurrent density vector
- n is the density of the photoexcited electron / hole pair
- e is the elementary charge amount
- v is the light
- the drift velocity ⁇ of the electron-hole pair accelerated by the electric field E local in the semiconductor at the irradiated position is the charge mobility.
- the amplitude intensity of the generated electromagnetic wave is proportional to the electric field E local in the semiconductor at the position irradiated with light.
- FIG. 2 is a schematic diagram of the semiconductor wafer 5.
- the semiconductor wafer 5 has a disk shape and a laminated structure.
- the semiconductor wafer 5 is formed by a p-Si substrate (p-type silicon substrate), a Si buffer layer (hereinafter referred to as an Si layer) formed by homoepitaxial growth on the p-Si substrate, and an epitaxial growth on the Si layer.
- An SiGe layer formed. That is, the semiconductor wafer 5 is formed to be in contact with a p-Si substrate, one end surface (the upper end surface in FIG. 2) of the p-Si substrate, and has a predetermined thickness, and the Si layer And an SiGe layer having a predetermined thickness formed so as to abut one end face (the upper end face in FIG. 2).
- the p-Si substrate is a substrate having a sufficient thickness as compared with the Si layer and the SiGe layer and stably holding the Si layer and the SiGe layer.
- FIG. 3 is a diagram showing the SIMS evaluation results for the semiconductor wafer 5, where the horizontal axis indicates the depth (nm), the right side of the vertical axis is Ge (germanium) concentration (atom%), and the left side of the vertical axis is B (boron) concentration (atom%) is shown. As shown in FIG. 3, the B concentration is high at the interface F1 between the SiGe layer and the Si layer and at the interface F2 between the Si layer and the p-Si substrate.
- FIG. 4 is a diagram showing the energy band structure of the semiconductor wafer 5, where the horizontal axis indicates the position (depth direction) and the vertical axis indicates the energy. Moreover, EC in the figure is a conduction band, and EV is a valence band.
- a depletion layer is formed at each interface that is a boundary of the substrate.
- the depletion layer is a region where no carrier exists, and a local electric field E (local electric field E I near the interface F1 and local electric field E II near the interface F2) is formed in the depletion layer. Accordingly, an electric field constantly exists in the depletion layer without applying a voltage from the outside.
- this depletion layer is irradiated with light to generate electron / hole pairs, electromagnetic waves are generated according to the equation (1). That is, a depletion layer is formed in each of the interface F1 between the SiGe layer and the Si layer and the interface F2 between the Si layer and the p-Si substrate, and when each depletion layer is irradiated with light, an electron-hole pair is generated. , (1), electromagnetic waves are radiated from the interfaces F1 and F2.
- E I and E II are formed.
- the directions and magnitudes of the local electric fields E I and E II vary depending on the physical state of the interface that is a boundary between the layers in the semiconductor wafer 5 (for example, the B contamination state of the interfaces F1 and F2 in the semiconductor wafer 5). Further, not only the physical state of the interface but also the physical state derived from each layer of the semiconductor wafer 5 (for example, the Ge concentration in the SiGe layer in the semiconductor wafer 5).
- the directions and magnitudes of the local electric fields E I and E II change depending on the physical state of the interface and the physical state of each layer, and the amplitude intensity of the electromagnetic wave radiated during laser light irradiation also changes accordingly. That is, the amplitude intensity of the electromagnetic wave represents a change in the physical property state of each layer or each interlayer interface in the semiconductor wafer 5.
- the SIMS evaluation result shown in FIG. 3 and the energy band structure shown in FIG. 4 correspond to each other, and the interface shown in FIG. 4 depends on the B concentration adsorbed on the interfaces F1 and F2 shown in FIG. since the energy levels of the F1, F2 is changed, the interface F1, the local electric field in the depletion layer formed in the F2 E I, E II also changes respectively, the pulse wave which is proportional to each of the local electric field E I, E II Each of the amplitude intensities also changes.
- FIG. 4 shows the B concentration adsorbed on the interfaces F1 and F2 shown in FIG. since the energy levels of the F1, F2 is changed, the interface F1, the local electric field in the depletion layer formed in the F2 E I, E II also changes respectively, the pulse wave which is proportional to each of the local electric field E I, E II
- Each of the amplitude intensities also changes.
- a region surrounded by dotted circles is a region where local electric fields E I and E II are formed, and a THz radiation region where a pulsed electromagnetic wave (terahertz wave) is emitted when irradiated with pulsed laser light. It becomes.
- the semiconductor wafer 5 includes three layers including the p-Si substrate, and there are two interfaces. For example, when the semiconductor wafer 5 is irradiated with pulsed laser light, the pulse electromagnetic wave radiated from the irradiation position is THz radiation I near the interface F1 and THz radiation II near the interface F2 in the case of the semiconductor wafer 5 shown in FIG. Observed as the sum of. Further, when there is no SiGe layer in the semiconductor wafer 5 shown in FIG.
- the present inventors have found a new technique capable of inspecting a laminated structure including a semiconductor layer such as a semiconductor wafer by performing analysis in association with the concentration of impurities in the wafer.
- the physical property information to be analyzed in association with the voltage signal is not limited to the substance concentration existing in each interface or each layer of the laminated structure including the semiconductor layer as described above, but is a carrier life that is a semiconductor physical property, Electron mobility, interlayer electric field distribution, crystal direction, and the like are also included.
- the amplitude intensity of the pulsed electromagnetic wave radiated from the irradiation position is measured by irradiating the semiconductor laser 5 that is a laminated structure including the semiconductor layer with the pulse laser light 9, and the amplitude intensity is measured.
- FIG. 1 is a schematic view of a semiconductor nondestructive inspection apparatus of this embodiment.
- the inspection device 1 of this embodiment includes an irradiation device (optical system), a detection / conversion device 4, and a control / analysis device 8.
- the irradiation device mainly includes a pulse laser light source 2, a beam splitter 14, a time delay unit 15, an optical chopper 16, a pump light condensing unit 18, and a scanning table 7.
- the irradiation device has a function of irradiating the semiconductor wafer 5 with pulsed laser light 9 (pump light L2) having a predetermined wavelength.
- pulsed laser light 9 pump light L2
- the configuration of the mirror and the like used to change the direction of the pulse laser beam 9 is not limited to the present embodiment. Considering the arrangement of each component, for example, the number of mirrors may be increased as appropriate. You can change the configuration.
- the irradiation apparatus has a scanning means for two-dimensional scanning by irradiating the pulse laser beam 9. That is, the scanning unit directs the pulse laser beam 9 toward the semiconductor wafer 5 while reciprocating the semiconductor wafer 5 on the scanning stage 7 (XY automatic stage) using a driving device (not shown) on the scanning stage 7. It has a function to irradiate. By irradiating the semiconductor wafer 5 with the pulsed laser light 9 by the scanning means and scanning two-dimensionally, it is possible to acquire the distribution of the electronic property information of the stacked structure.
- the pump light L ⁇ b> 2 that is a split light of the pulse laser light 9 is irradiated onto the laser light irradiation surface of the semiconductor wafer 5, and is a semiconductor fixed to the scanning table 7.
- the semiconductor wafer 5 is moved to a position where the pump light L2 is irradiated so that the laser light irradiation surface of the semiconductor wafer 5 is scanned.
- a pulsed electromagnetic wave 10 is continuously emitted from the laser light irradiation position.
- the scanning configuration is not limited to the configuration of this embodiment, and the pulse laser beam 9 is scanned two-dimensionally on the semiconductor wafer 5 by a swinging or rotating mirror (not shown) or the pulse laser light source 2 Or may be irradiated.
- the plane formed by the path of the pulse laser beam 9 and the pulse electromagnetic wave 10 is a substantially horizontal plane, that is, FIG. 1 is a top view configuration.
- the arrangement is such that the pulse laser beam 9 and the pulse electromagnetic wave 10 form a substantially horizontal plane, but it is desirable to appropriately set the shape and fixing method of each device, and it is necessary to configure the substantially horizontal plane. Absent.
- the incident angle of the pump light L2 that is a split light of the pulse laser light 9 to the semiconductor wafer 5 is an angle at which the wavelength of the pulse laser light 9 (pump light L2) is most absorbed by the semiconductor wafer 5.
- the pulse laser light source 2 is a means for irradiating the pulse laser light 9.
- the pulse laser light source 2 is means for radiating a pulse electromagnetic wave 10 having an amplitude intensity depending on physical property information at the irradiation position by irradiating the laser beam incident surface of the semiconductor wafer 5 with the pulse laser light 9.
- a femtosecond titanium sapphire laser (repetition frequency 82 MHz, output 890 MHz, center wavelength 780 nm, pulse width 100 fs) is used as the pulse laser light source 2 in this embodiment.
- the pulse laser light source 2 may be a mode-locked titanium sapphire laser or a femtosecond fiber laser capable of generating the pulse laser light 9 as in this embodiment.
- the electromagnetic wave when exciting the electromagnetic wave, the electromagnetic wave can be excited without significantly affecting the semiconductor wafer 5 by using the pulse laser beam 9 having a small time width as a light source.
- the pulse laser beam 9 having a small time width as a light source.
- time-resolved measurement with high time resolution becomes possible, and the semiconductor wafer 5 to be inspected can be observed in real time.
- the maximum optical pulse width that does not affect the semiconductor wafer 5 can be estimated to be about 10 picoseconds.
- a femtosecond laser there is an effect that the influence of heating by the laser can be minimized.
- the beam splitter 14 is means for dividing the incident pulse laser light 9 into the probe light L1 and the pump light L2.
- the pump light L2 can be divided in the vertical direction with respect to the probe light L1 traveling straight.
- a half mirror is used.
- the probe light L1 is light used to acquire synchronization at the time of inspection of the semiconductor wafer 5 to be inspected, and is transmitted from the beam splitter 14 via the time delay means 15, the mirror 31, the mirror 34, and the lens 35.
- the detection / conversion device 4 (detection element 19 described later) is irradiated.
- the pump light L ⁇ b> 2 is applied to the irradiation surface of the semiconductor wafer 5 from the beam splitter 14 through the mirror 29, the optical chopper 16, and the mirror 30.
- the time delay means 15 is a means that is arranged in the optical path of the probe light L1 and can periodically delay the time when the amplitude intensity is detected by the detection / conversion device 4. That is, the time delay means 15 is a means that is arranged in the optical path of the probe light and can periodically delay the time that the pulse electromagnetic wave 10 is incident on the detection element 19.
- the time delay means 15 includes a movable mirror 15a that can be periodically moved in a predetermined direction by a driving means (not shown), and a stage 15b that holds the movable mirror 15a.
- the time delay unit 15 can reflect the probe light L1 incident on the time delay unit 15 in a direction parallel to and opposite to the incident direction of the probe light L1.
- the time delay means 15 adjusts the optical path length of the probe light L1 by optically delaying the movable mirror 15a by reciprocating the movable mirror 15a in parallel and periodically with respect to the incident direction of the probe light L1. It is possible.
- the driving means is controlled by the control / analysis device 8.
- the time delay means 15 periodically detects the probe light L1 provided with a time delay amount at a predetermined time interval by moving the movable mirror 15a for adjusting the optical path length of the probe light L1. 4 (detection element 19 to be described later).
- the optical chopper 16 is disposed in the optical path of the pump light L2, and can chop the pump light L2 at a predetermined frequency.
- the detection / conversion device 4 is means for detecting the amplitude intensity of the pulse electromagnetic wave 10 emitted from the pulse laser beam irradiation position of the semiconductor wafer 5. As shown in FIG. 1, the detection / conversion device 4 includes a detection element 19 that is an electromagnetic wave detection unit, a pump light condensing unit 18, and a conversion unit.
- the detection / conversion device 4 condenses the pulsed electromagnetic wave 10 radiated from the semiconductor wafer 5 by an off-axis parabolic mirror that is the pump light condensing means 18, detects the condensed pulsed electromagnetic wave 10, This is converted into a time-varying voltage signal (hereinafter also referred to as a time series waveform) corresponding to the time waveform of the amplitude intensity (electric field amplitude) of the pulse electromagnetic wave 10.
- a time-varying voltage signal hereinafter also referred to as a time series waveform
- the detection element 19 is an element that receives the pulse electromagnetic wave 10 emitted from the irradiation position of the pump light L2 and generates a current corresponding to the amplitude intensity of the incident pulse electromagnetic wave 10.
- the detection element 19 is, for example, a photoconductive antenna or the like, and is arranged so that the pulse electromagnetic wave 10 generated from the irradiation position of the pump light L2 on the irradiation surface of the semiconductor wafer 5 can enter, and in synchronization with the incidence of the pulse electromagnetic wave 10, the probe 19 When the light L1 is irradiated onto a predetermined position of the detection element 19, a current proportional to the amplitude intensity of the pulse electromagnetic wave 10 incident upon the irradiation is generated.
- the pump light condensing means 18 is a pair of off-axis parabolic mirrors, and is arranged between the semiconductor wafer 5 to be inspected and the detection element, and collects the pulse electromagnetic wave 10 radiated from the semiconductor wafer 5. Light is applied to one end of the detection element 19.
- the conversion means includes a current amplifier 27 connected to the detection element 19 and a lock-in amplifier 28 connected to the current amplifier 27.
- the current amplifier 27 is connected to the detection element 19 and converts a current generated in the detection element 19 into a voltage.
- the lock-in amplifier 28 is connected to the current amplifier 27 and converts the voltage converted by the current amplifier 27 into a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of the pulse electromagnetic wave 10.
- the lock-in amplifier 28 is connected to the optical chopper 16. In this conversion means, by measuring the current generated in the detection element 19, it is possible to detect the amplitude intensity of the pulsed electromagnetic wave 10 incident when the probe light L1 is applied to the detection element 19.
- the frequency component included in the pulse electromagnetic wave 10 is included in a range from 10 gigahertz to 100 terahertz, so that the detection / conversion device 4 having a general configuration can be used.
- the terahertz region is preferable to the gigahertz region as the pulse electromagnetic wave 10 to be used.
- the electromagnetic wave can be easily guided to the detector by an optical technique using a mirror, a lens, or the like.
- the high-frequency region is more so-called light than the terahertz region. However, when using light, it is necessary to provide a means for distinguishing ambient light from signal light. It is preferable to use electromagnetic waves in the terahertz region rather than using electromagnetic waves having a higher frequency than the terahertz region.
- the control / analysis device 8 generates a time series waveform of the amplitude intensity (voltage value) of the pulse electromagnetic wave 10 from the voltage signal converted by the conversion means of the detection / conversion device 4, or the generated time series waveform.
- This is a device for performing a predetermined analysis using
- the control / analysis device 8 is a computer having an image display unit that enables execution of control and analysis described in this specification, and irradiation is performed via a control signal line (not shown). Control of the device (optical system), the scanning stage 7, the detection / conversion device 4, and the pulsed laser light source 2 is also performed.
- the control / analysis device 8 is a device capable of displaying (imaging) a time-series waveform of the amplitude intensity of the pulse electromagnetic wave 10 and an analysis result using them as a map or an image.
- the predetermined analysis includes image processing based on a time-series waveform of the amplitude intensity of the pulse electromagnetic wave 10 and arithmetic processing such as predetermined Fourier transform.
- control / analysis device 8 has physical property information acquisition means.
- the physical property information acquisition means compares the time series waveform attributed to the semiconductor wafer 5 with the time series waveform attributed to each single layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. This is means for acquiring electronic physical property information of each layer of the wafer 5 or electronic physical property information of each interlayer interface.
- the control / analysis device 8 compares the time-series waveform attributed to the semiconductor wafer 5 with the time-series waveform attributed to each single-layer structure of the semiconductor wafer 5, whereby the electronic physical properties of each layer of the semiconductor wafer 5 are compared.
- the information or the electronic physical property information of each interlayer interface is a means for obtaining a signal including information on carrier lifetime, electron mobility, interlayer electric field distribution, and crystal direction.
- the control / analysis device 8 is a means for determining the quality of the semiconductor wafer 5 based on the electronic property information.
- the control / analysis device 8 calculates a frequency component of the time series waveform of the semiconductor wafer 5 and a frequency component of the time series waveform of each single-layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. It has further. Thereby, the physical property information acquisition means compares the frequency component of the time series waveform by the semiconductor wafer 5 with the frequency component of the time series waveform by each single layer structure constituting the semiconductor wafer 5 acquired as the reference data. By doing so, the electronic property information of each layer of the semiconductor wafer 5 or the electronic property information of each interlayer interface can be acquired.
- control / analysis apparatus 8 calculates a frequency component belonging to the semiconductor wafer 5 by performing Fourier transform on the time-series waveform of the semiconductor wafer 5 and constitutes a single-layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. It is possible to calculate a frequency component by performing Fourier transform on a time-series waveform by the body and compare each frequency component.
- the control / analysis device 8 further includes a mechanism for rotating the polarization direction of the pulsed laser light 9 to an arbitrary angle. By comparing the two time series waveforms of the semiconductor wafer 5 obtained when the semiconductor wafer 5 is irradiated with the pulsed laser light 9 and set at any two angles by the mechanism, the semiconductor wafer 5 is compared. It is possible to obtain information on the crystal orientation of each layer.
- the control / analysis device 8 further includes wavelength changing means for changing the center wavelength of the pulse laser beam 9.
- the pulsed laser light 9 set to have at least two wavelengths by the wavelength changing means is irradiated onto the semiconductor wafer 5, and two time-series waveforms by the laminated structure obtained from the pulsed laser light irradiation position are obtained.
- the center wavelength may be changed so that the wavelength is longer than 1 ⁇ m (1000 nm) and shorter than 1 ⁇ m.
- the control / analysis device 8 causes the pulsed laser light source 2 to irradiate the semiconductor wafer 5 with pulsed laser light 9.
- the pulse electromagnetic wave 10 generated by the irradiation of the pulsed laser light 9 is detected by the detection / conversion device 4, and the control / analysis device 8 takes in the detection result and detects the amplitude intensity of the pulse electromagnetic wave 10.
- the control / analysis apparatus 8 controls the scanning table 7 while continuing to detect the pulse electromagnetic wave 10 on the semiconductor wafer 5 and irradiates the pulse laser beam 9 while moving the semiconductor wafer 5.
- the semiconductor nondestructive inspection apparatus 1 includes means (scanning table 7, pulse laser light source 2) for two-dimensionally scanning and irradiating the pulsed laser light 9, and the pulsed laser light 9 is two-dimensionally provided.
- the pulse laser beam 9 is continuously irradiated onto the semiconductor wafer 5 by means of scanning and irradiating means (scanning table 7, pulse laser light source 2), and the amplitude of the pulse electromagnetic wave 10 generated by the irradiation. The intensity can be measured continuously.
- the semiconductor nondestructive inspection apparatus 1 in this embodiment includes means (scanning table 7, pulsed laser light source 2) for two-dimensionally scanning and irradiating the pulsed laser light 9 when performing measurement. It is not always necessary to perform scanning, and the necessity of scanning may be determined according to the measurement environment and used as appropriate.
- the control / analysis device 8 acquires a time-varying voltage signal (time series waveform) corresponding to the time waveform of the amplitude intensity of the pulse electromagnetic wave 10, analyzes the time series waveform, and analyzes the semiconductor wafer 5. It functions as a means to acquire the electronic physical property information of each layer and the electronic physical property information of each interlayer interface, and by analyzing the time series waveform, as the electronic physical property information, for example, carrier lifetime, mobility, interlayer A signal including information on the electric field distribution and crystal orientation is obtained.
- the semiconductor wafer 5 that is the inspection target is inspected by the above apparatus configuration and principle.
- the semiconductor wafer 5 is irradiated with a pulsed laser beam 9 having a predetermined wavelength, and the pulsed electromagnetic wave 10 emitted from the irradiation position of the pulsed laser beam 9.
- a nondestructive semiconductor nondestructive inspection method that proceeds in accordance with the flow shown in FIG. 6 and includes a laser beam splitting step S10, an incident step S20, a probe light irradiation step S30, and time-series waveform generation. It has process S40 and physical property information acquisition process S50.
- each step will be specifically described.
- Laser beam splitting step S10 is a step of splitting the pulse laser beam 9 into probe light L1 and pump light L2.
- the pulse laser beam 9 output from the pulse laser beam source 2 in FIG. 1 is converted into two pulse laser beams 9 by a beam splitter 14 (a half mirror in this embodiment).
- the light is divided into light L1 and pump light L2.
- the incident step S20 is a step of irradiating the semiconductor wafer 5 with the pump light L2, condensing the pulse electromagnetic wave 10 radiated from the semiconductor wafer 5, and causing the pulsed electromagnetic wave 10 to enter the detection element 19 which is one of the detection means. is there.
- the pump light L ⁇ b> 2 that is one of the pulsed laser beams 9 divided by the beam splitter 14 is allowed to pass through the mirror 29, the optical chopper 16, and the mirror 30, and the pump light L ⁇ b> 2 that has passed through the optical chopper 16. Is irradiated onto the semiconductor wafer 5. Then, the pulse electromagnetic wave 10 radiated from the irradiation position of the pump light L2 is condensed to one end of the detection element 19 by the off-axis parabolic mirror which is the pump light condensing means 18, and the pump light L2 is collected by the detection element 19 The amplitude intensity of the pulse electromagnetic wave 10 generated by the irradiation is detected.
- Probe light irradiation step S30 is a step of irradiating the detection element 19 with the probe light L1 passing through the time delay means 15 and synchronizing with the incidence of the pulsed electromagnetic wave 10 generated by the pump light L2. That is, the probe light irradiation step S30 irradiates the detection element 19 with the probe light L1 in synchronization with the incidence of the pulsed electromagnetic wave 10 emitted by the pump light L2 while being delayed for a predetermined period. It is a process.
- the divided probe light L ⁇ b> 1 that is pulsed laser light passes through the time delay means 15, the mirror 31, the mirror 34, and the lens 35 to the other end of the detection element 19. Irradiated.
- the probe light L ⁇ b> 1 is irradiated in synchronization with the pulse electromagnetic wave 10 generated from the semiconductor wafer 5 entering the detection element 19.
- the time-series waveform generation step S40 detects a plurality of different delay times in the semiconductor wafer 5 by detecting the amplitude intensity of the pulse electromagnetic wave 10 by the pump light L2 incident on the detection element 19 at the time of irradiation of the probe light L1. In this step, the amplitude intensity of the pulse electromagnetic wave 10 is acquired and a time-series waveform of the pulse electromagnetic wave 10 in the semiconductor wafer 5 is generated. That is, the time-series waveform generation step S40 acquires the amplitude intensities of the plurality of pulse electromagnetic waves 10 having different delay times synchronized with the probe light L1, and generates a time-series waveform of the pulse electromagnetic waves 10 in the semiconductor wafer 5. It is.
- the time delay unit 15 In FIG. 2, the probe light L1 is incident and reflected by the movable mirror 15a that is movably arranged in a predetermined direction (in the present embodiment, parallel to the probe light L1). Further, the control / analysis device 8 periodically reciprocates the movable mirror 15a in a predetermined direction at a predetermined frequency, thereby optically delaying the time for the probe light L1 to reach the detection element 19.
- control / analysis device 8 delays the time when the probe light L1 is incident on the detection element 19 while periodically changing the time when the probe light L1 reaches the detection element 19 by the time delay means 15.
- the amplitude intensity of the pulse electromagnetic wave 10 when the probe light L1 is incident can be acquired in a predetermined time series (see FIG. 7A).
- the control / analyzer 8 generates a time-series waveform of amplitude intensity based on the amplitude intensity of the detected pulsed electromagnetic wave 10.
- the detection element 19 is pumped by the semiconductor wafer 5.
- the pulse electromagnetic wave 10 generated from the irradiation position of the light L2 is condensed on the detection element 19, and the probe light L1 is irradiated to a predetermined position of the detection element 19 in synchronization with the incidence of the pulse electromagnetic wave 10, the irradiation of the probe light L1 is performed.
- a current proportional to the electric field strength (amplitude strength) of the incident pulsed electromagnetic wave 10 is sometimes generated.
- the current is converted into a voltage by the current amplifier 27, and then lock-in detection is performed by the lock-in amplifier 28 in synchronization with the chopping of the optical chopper 16.
- the lock-in detection value is input to a control / analysis device (computer) 8. That is, it is possible to detect the amplitude intensity of the pulse electromagnetic wave 10 that is incident when the probe light L1 is applied to the detection element 19.
- the time delay ⁇ which is the time until the probe light L1 reaches the detection element 19, is set as the time delay.
- the horizontal axis of FIG.7 (b) shows time delay (DELTA) (tau).
- the physical property information acquisition step S50 compares the time series waveform belonging to the semiconductor wafer 5 with the time series waveform belonging to each single-layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. This is a step of obtaining electronic physical property information of each layer of the semiconductor wafer 5 or electronic physical property information of each interlayer interface.
- the control / analysis apparatus 8 compares the time series waveform belonging to the semiconductor wafer 5 with the time series waveform belonging to each single-layer structure of the semiconductor wafer 5, whereby the semiconductor wafer 5 is a step of obtaining a signal including information relating to, for example, carrier lifetime, electron mobility, interlayer electric field distribution, and crystal direction, as the electronic property information of each layer or the electronic property information of each interlayer interface.
- the results of inspecting a predetermined semiconductor wafer using the semiconductor nondestructive inspection apparatus 1 are shown below.
- SiGe layers having different Ge concentrations were produced as semiconductor wafers to be inspected.
- a sample having a Ge composition of 0% (sample name K-6-91, a sample described as Homoepi in FIGS. 9 and 10) is composed of a Si layer in which no SiGe layer is formed and a p-Si substrate. It will be. 9 and 10 show the results of inspecting these samples by the semiconductor nondestructive inspection apparatus 1 described above.
- the sample composed of the Si layer on which the SiGe layer is not formed and the p-Si substrate is a one-layer structure in which only one Si layer is formed on the p-Si substrate. Is called a single-layer structure.
- FIG. 9 is a comparison of time series waveforms of samples having different Ge compositions of the SiGe layer, with the horizontal axis representing time (ps) and the vertical axis representing amplitude intensity (mV).
- time-series waveforms of Ge composition 9%, 7%, 3% and no SiGe layer are arranged in order from the top.
- the time-series waveform varies greatly depending on the presence or absence of Ge. That is, the time-series waveform is greatly different between a sample having a SiGe layer (Ge composition: 9%, 7%, 3%) and a sample having only a Si layer having no SiGe layer. And it can confirm that a waveform pattern changes also with the difference in Ge composition.
- FIG. 10 shows the frequency components calculated based on the time-series waveform of each sample in FIG. 9, and the frequency components of each sample are normalized and compared.
- the horizontal axis is frequency (THz) and the vertical axis is normalized. Amplitude intensity. Also in this case, it can be confirmed that each time-series waveform is different.
- FIG. 11 shows image data near the center of the semiconductor wafer and image data near the edge of the semiconductor wafer, in which the amplitude intensity is image-displayed two-dimensionally for a sample having a Ge composition of 7% in the SiGe layer.
- the amplitude intensity of the pulse electromagnetic wave In the vicinity of the central portion of the semiconductor wafer, the amplitude intensity of the pulse electromagnetic wave is uniform. In contrast, a non-uniform distribution of the amplitude intensity (THz radiation intensity) of the pulse electromagnetic wave near the edge of the semiconductor wafer was observed.
- FIG. 12 shows the results of further detailed verification of the amplitude intensity (THz radiation intensity) of the pulse electromagnetic wave near the edge of the semiconductor wafer.
- the lower part of FIG. 12A shows two-dimensional image data of the amplitude intensity in the vicinity of the central portion of the semiconductor wafer shown in FIG.
- the upper diagram in FIG. 12A shows the amplitude intensity (mV) of the cross section of the upper side near the edge of the semiconductor wafer.
- FIG. 12B shows the result of strain measurement of the SiGe layer by Raman measurement. In the Raman measurement of FIG. 12B, the strain at each position in the lateral direction of the SiGe layer is substantially uniform, whereas each position in the lateral direction of the SiGe layer shown in the upper diagram of FIG.
- the amplitude intensity at differs greatly depending on the position in the horizontal direction (a large amplitude intensity peak exists on the right side). From this, if the semiconductor nondestructive inspection apparatus 1 of this invention is used, the SiGe physical property different from the distortion measurement by Raman can be measured. Further, the portion surrounded by the white line of the two-dimensional image data of the amplitude intensity shown in the lower diagram of FIG. 12A is a portion where the SiGe layer is peeled off, and can be clearly confirmed as a difference in amplitude intensity.
- the electronic physical property information of each layer of the laminated structure or the electronic physical property information of each interlayer interface is included in a nondestructive and non-contact manner.
- a signal can be acquired.
- the present invention can be used in, for example, semiconductor inspection fields such as semiconductor wafer inspection devices and LSI inspection devices, material inspection evaluation fields such as solid material inspection devices and organic material inspection devices, and physical property physics research fields.
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Abstract
[Problem] To provide a semiconductor non-destructive inspection device and a semiconductor non-destructive inspection method which are capable of acquiring, from a laminated structure such as a semiconductor wafer including a semiconductor layer, electronic physical property information of each layer of the laminated structure and electronic physical property information of each interlayer interface thereof.
[Solution] A semiconductor non-destructive inspection device (1) comprises: a means for dividing pulse laser light (9) into probe light (L1) and pump light (L2); a means for irradiating a semiconductor wafer (5) with the pump light (L2) to thereby emit an electromagnetic wave (10) from an irradiation position; a lock-in amplifier (28) for detecting the amplitude intensity of the electromagnetic wave (10) via a detection element (19) and converting the amplitude intensity into a time-series waveform corresponding to the temporal waveform of the amplitude intensity of the electromagnetic wave (10); a time delay means (15) for periodically delaying the time at which the amplitude intensity is detected by the detection element (19); and a physical property information acquisition means for acquiring electronic physical property information of each layer of a laminated structure and electronic physical property information of each interlayer interface thereof by comparing the time-series waveform and the time-series waveform of each single-layer structure of a laminated structure previously prepared as reference data.
Description
本発明は、半導体ウェハや半導体デバイス等の半導体層を含む積層構造体に対して、レーザー光を照射することにより当該積層構造体の各層の電子物性情報や各層間界面の電子物性情報を非破壊で取得する半導体非破壊検査装置及び半導体非破壊検査方法に関する。
The present invention provides a non-destructive electronic property information of each layer of a laminated structure and an electronic property information of each interlayer interface by irradiating a laminated structure including a semiconductor layer such as a semiconductor wafer or a semiconductor device with a laser beam. The present invention relates to a semiconductor non-destructive inspection apparatus and a semiconductor non-destructive inspection method that are obtained in the above.
LSIの微細化技術においては、今までスケーリング(比例縮小)によって微細化が進められてきたが、今後スケーリング技術だけではLSIのさらなる微細化を進めていくことは困難である。そのため、次世代半導体技術としては、LSIのさらなる微細化が可能なポストスケーリング技術が検討されており、具体的には、歪みSiによるキャリア移動度制御等がそのひとつとして挙げられる。このような次世代半導体技術により次世代半導体デバイスが実現した場合、従来より高度な半導体検査技術や半導体評価技術も合わせて必要となる。従来から知られる、半導体ウェハや半導体デバイス(半導体集積回路)等を検査する検査装置や検査方法としては、レーザー光を利用して非破壊で検査を行う技術が知られている(例えば、特許文献1~4参照)。
LSI miniaturization technology has been advanced by scaling (proportional reduction) so far, but it is difficult to further miniaturize LSI with scaling technology alone. Therefore, as a next-generation semiconductor technology, post-scaling technology capable of further miniaturization of LSI has been studied, and specifically, carrier mobility control by strained Si and the like can be cited as one of them. When a next-generation semiconductor device is realized by such a next-generation semiconductor technology, more advanced semiconductor inspection technology and semiconductor evaluation technology than before are also required. As a conventionally known inspection apparatus and inspection method for inspecting a semiconductor wafer, a semiconductor device (semiconductor integrated circuit), etc., a technique for performing non-destructive inspection using a laser beam is known (for example, Patent Documents). 1 to 4).
特許文献1及び特許文献2においては、レーザー光を炭化珪素(SiC)半導体からなるSiCウェハに照射することで、SiCウェハから放射された光を分光器によって検出し、測定した光強度に基づいて半導体装置の特性劣化を判定する装置及び方法が開示されている。
In Patent Document 1 and Patent Document 2, the light emitted from the SiC wafer is detected by a spectroscope by irradiating the SiC wafer made of a silicon carbide (SiC) semiconductor with a laser beam, and based on the measured light intensity. An apparatus and method for determining characteristic deterioration of a semiconductor device are disclosed.
特許文献3では、所定の電圧印加状態を保持した半導体デバイス(半導体集積回路)において、極短パルスレーザーを半導体デバイスの2次元回路上に照射し、該照射位置から放射される電磁波を検出し、該電磁波の有無又は強さから照射位置の断線を非接触で検出する集積回路断線検査方法と装置が開示されている。
In Patent Document 3, in a semiconductor device (semiconductor integrated circuit) that maintains a predetermined voltage application state, an ultrashort pulse laser is irradiated onto a two-dimensional circuit of the semiconductor device, and electromagnetic waves emitted from the irradiation position are detected, An integrated circuit disconnection inspection method and apparatus for detecting disconnection of an irradiation position in a non-contact manner based on the presence or absence or intensity of the electromagnetic wave is disclosed.
特許文献4においては、極短パルスレーザー光を半導体デバイスにおけるpn接合あるいは金属半導体界面などビルトイン電界の発生箇所に照射することで、該照射位置から放射される電磁波の時間波形から電界分布を検出し、故障診断を行う方法と装置が開示されている。
In Patent Document 4, an electric field distribution is detected from a time waveform of an electromagnetic wave radiated from an irradiation position by irradiating an ultrashort pulse laser beam to a place where a built-in electric field is generated such as a pn junction or a metal semiconductor interface in a semiconductor device. A method and apparatus for performing fault diagnosis is disclosed.
しかしながら、特許文献1、2においては、レーザー光の照射による半導体ウェハからの発光が起こらない場合は、すなわち、半導体表面に欠陥のない半導体ウェハの場合では、半導体表面における欠陥の有無以外の詳細な検査を行うことができなかった。
However, in Patent Documents 1 and 2, when light emission from the semiconductor wafer due to laser light irradiation does not occur, that is, in the case of a semiconductor wafer having no defects on the semiconductor surface, details other than the presence or absence of defects on the semiconductor surface. The inspection could not be performed.
また、特許文献3に記載の検査方法と装置においては、検査を行うにあたって、半導体デバイスに電圧を印加するために電極構造を設けるとともに、当該半導体デバイスを所定の電圧印加状態に保持する必要があり、例えば、半導体デバイスの製造に用いられる半導体ウェハそのものには適用することができなかった。
Further, in the inspection method and apparatus described in Patent Document 3, it is necessary to provide an electrode structure for applying a voltage to the semiconductor device and to hold the semiconductor device in a predetermined voltage application state when performing the inspection. For example, it could not be applied to a semiconductor wafer itself used for manufacturing a semiconductor device.
一方、特許文献4に記載の検査方法及び装置においては、特許文献3に記載の検査方法及び装置のように半導体デバイスに電圧を印加する必要はないが、半導体デバイスにpn接合あるいは金属半導体界面が半導体デバイス内にビルトインされている必要があり、検査対象が限られている。
On the other hand, in the inspection method and apparatus described in Patent Document 4, it is not necessary to apply a voltage to the semiconductor device as in the inspection method and apparatus described in Patent Document 3, but the semiconductor device has a pn junction or a metal semiconductor interface. The semiconductor device needs to be built-in, and inspection objects are limited.
また、特許文献4に記載の検査方法及び装置においては、積層構造を有する半導体デバイスを検査する際に、当該半導体デバイスの深さ方向(積層方向)の数か所から同時に電磁波が発生する場合は、故障診断することが困難であった。
In the inspection method and apparatus described in Patent Document 4, when a semiconductor device having a laminated structure is inspected, electromagnetic waves are simultaneously generated from several places in the depth direction (lamination direction) of the semiconductor device. It was difficult to diagnose failure.
すなわち、従来の半導体検査技術では、半導体ウェハのような積層構造体の深さ方向(積層方向)の数か所から同時に電磁波が発生した場合、当該電磁波の解析はできず、その検査対象も電極構造やpn接合されているものに限定されており、半導体検査装置としては汎用性に欠けるものであった。また、次世代半導体技術(ポストスケーリング技術)を実現するにあたっては、半導体検査技術の向上も合わせて必要であり、例えば、積層構造を有する半導体ウェハの場合、当該半導体ウェハの深さ方向(積層方向)の各層の電子物性情報や各層間界面の電子物性情報を得ることが望まれる。しかしながら、従来の半導体検査技術では、非破壊で当該積層構造体の各層の電子物性情報や各層間界面における電子物性情報まで得ることができなかった。
That is, in the conventional semiconductor inspection technology, when electromagnetic waves are generated simultaneously from several places in the depth direction (stacking direction) of a laminated structure such as a semiconductor wafer, the electromagnetic waves cannot be analyzed, and the inspection object is also an electrode. The structure and the pn junction are limited, and the semiconductor inspection apparatus lacks versatility. Further, in realizing the next generation semiconductor technology (post-scaling technology), it is necessary to improve the semiconductor inspection technology. For example, in the case of a semiconductor wafer having a laminated structure, the depth direction of the semiconductor wafer (lamination direction) It is desirable to obtain electronic physical property information on each layer and electronic physical property information on each interlayer interface. However, the conventional semiconductor inspection technology has not been able to obtain electronic physical property information of each layer of the multilayer structure and electronic physical property information at each interlayer interface in a nondestructive manner.
そこで、本発明は、上記課題を解決するためになされたものであり、半導体ウェハや半導体デバイス等の半導体層を含む積層構造体から当該積層構造体の各層の電子物性情報や各層間界面の電子物性情報を取得することができる半導体非破壊検査装置及び半導体非破壊検査方法を提供することを目的とする。
Therefore, the present invention has been made to solve the above-described problems. From a laminated structure including a semiconductor layer such as a semiconductor wafer or a semiconductor device, information on electronic physical properties of each layer of the laminated structure or electrons at each interlayer interface is provided. It is an object of the present invention to provide a semiconductor nondestructive inspection apparatus and a semiconductor nondestructive inspection method capable of acquiring physical property information.
本発明の解決しようとする課題は以上の如くであり、次にこの課題を解決するための手段を説明する。
The problems to be solved by the present invention are as described above. Next, means for solving the problems will be described.
即ち、本発明においては、
半導体層を含む積層構造体に対して所定の波長を有するパルスレーザー光を照射し、当該パルスレーザー光照射位置から放射される電磁波により前記積層構造体を非破壊で検査する半導体非破壊検査装置であって、
前記パルスレーザー光をプローブ光とポンプ光とに2分割するレーザー光分割手段と、
前記積層構造体に前記ポンプ光を照射することで、当該ポンプ光照射位置から前記電磁波を放射させる手段と、
前記ポンプ光照射位置から放射される前記電磁波が入射され、当該入射された電磁波の振幅強度に応じた電流を発生させる検出素子と、
前記検出素子に接続され、前記検出素子で発生した電流を電圧に変換する電流アンプと、
前記電流アンプに接続され、前記電流アンプで変換された電圧を前記電磁波の振幅強度の時間波形に対応した時間的に変化する電圧信号に変換するロックインアンプと、
前記プローブ光の光路に配置され、前記検出素子に前記電磁波が入射する時間を周期的に遅延可能である時間遅延手段と、
前記時間的に変化する電圧信号と、予め参照データとして準備した前記積層構造体を構成する各単層構造体の時間的に変化する電圧信号を比較することで、前記積層構造体の各層の電子物性情報又は各層間界面の電子物性情報を取得する物性情報取得手段と、
を有する半導体非破壊検査装置である。 That is, in the present invention,
A semiconductor non-destructive inspection apparatus that irradiates a laminated structure including a semiconductor layer with a pulsed laser beam having a predetermined wavelength and inspects the laminated structure non-destructively by an electromagnetic wave emitted from the pulse laser light irradiation position. There,
Laser beam splitting means for splitting the pulse laser beam into probe light and pump light;
Means for radiating the electromagnetic wave from the pump light irradiation position by irradiating the laminated structure with the pump light;
A detection element that receives the electromagnetic wave emitted from the pump light irradiation position and generates a current corresponding to the amplitude intensity of the incident electromagnetic wave;
A current amplifier connected to the detection element and converting a current generated in the detection element into a voltage;
A lock-in amplifier that is connected to the current amplifier and converts the voltage converted by the current amplifier into a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of the electromagnetic wave;
A time delay means arranged in the optical path of the probe light and capable of periodically delaying the time that the electromagnetic wave is incident on the detection element;
By comparing the time-varying voltage signal with the time-varying voltage signal of each single-layer structure constituting the stacked structure prepared in advance as reference data, the electrons of each layer of the stacked structure are compared. Physical property information acquisition means for acquiring physical property information or electronic physical property information of each interlayer interface;
This is a semiconductor nondestructive inspection apparatus.
半導体層を含む積層構造体に対して所定の波長を有するパルスレーザー光を照射し、当該パルスレーザー光照射位置から放射される電磁波により前記積層構造体を非破壊で検査する半導体非破壊検査装置であって、
前記パルスレーザー光をプローブ光とポンプ光とに2分割するレーザー光分割手段と、
前記積層構造体に前記ポンプ光を照射することで、当該ポンプ光照射位置から前記電磁波を放射させる手段と、
前記ポンプ光照射位置から放射される前記電磁波が入射され、当該入射された電磁波の振幅強度に応じた電流を発生させる検出素子と、
前記検出素子に接続され、前記検出素子で発生した電流を電圧に変換する電流アンプと、
前記電流アンプに接続され、前記電流アンプで変換された電圧を前記電磁波の振幅強度の時間波形に対応した時間的に変化する電圧信号に変換するロックインアンプと、
前記プローブ光の光路に配置され、前記検出素子に前記電磁波が入射する時間を周期的に遅延可能である時間遅延手段と、
前記時間的に変化する電圧信号と、予め参照データとして準備した前記積層構造体を構成する各単層構造体の時間的に変化する電圧信号を比較することで、前記積層構造体の各層の電子物性情報又は各層間界面の電子物性情報を取得する物性情報取得手段と、
を有する半導体非破壊検査装置である。 That is, in the present invention,
A semiconductor non-destructive inspection apparatus that irradiates a laminated structure including a semiconductor layer with a pulsed laser beam having a predetermined wavelength and inspects the laminated structure non-destructively by an electromagnetic wave emitted from the pulse laser light irradiation position. There,
Laser beam splitting means for splitting the pulse laser beam into probe light and pump light;
Means for radiating the electromagnetic wave from the pump light irradiation position by irradiating the laminated structure with the pump light;
A detection element that receives the electromagnetic wave emitted from the pump light irradiation position and generates a current corresponding to the amplitude intensity of the incident electromagnetic wave;
A current amplifier connected to the detection element and converting a current generated in the detection element into a voltage;
A lock-in amplifier that is connected to the current amplifier and converts the voltage converted by the current amplifier into a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of the electromagnetic wave;
A time delay means arranged in the optical path of the probe light and capable of periodically delaying the time that the electromagnetic wave is incident on the detection element;
By comparing the time-varying voltage signal with the time-varying voltage signal of each single-layer structure constituting the stacked structure prepared in advance as reference data, the electrons of each layer of the stacked structure are compared. Physical property information acquisition means for acquiring physical property information or electronic physical property information of each interlayer interface;
This is a semiconductor nondestructive inspection apparatus.
本発明においては、
前記積層構造体の前記時間的に変化する電圧信号の周波数成分と、予め参照データとして準備した前記積層構造体を構成する各単層構造体の時間的に変化する電圧信号の周波数成分を算出する算出手段をさらに有し、
前記物性情報取得手段は、前記積層構造体の前記時間的に変化する電圧信号の周波数成分と、前記各単層構造体の時間的に変化する電圧信号の周波数成分を比較することで、前記積層構造体の各層の電子物性情報又は各層間界面の電子物性情報を取得する半導体非破壊検査装置である。 In the present invention,
The frequency component of the voltage signal that changes with time of the stacked structure and the frequency component of the voltage signal that changes with time of each single-layer structure that forms the stacked structure prepared in advance as reference data are calculated. A calculation means;
The physical property information acquisition means compares the time-dependent frequency signal frequency component of the multilayer structure with the time-varying voltage signal frequency component of each of the single-layer structures. It is a semiconductor nondestructive inspection apparatus that acquires electronic physical property information of each layer of a structure or electronic physical property information of each interlayer interface.
前記積層構造体の前記時間的に変化する電圧信号の周波数成分と、予め参照データとして準備した前記積層構造体を構成する各単層構造体の時間的に変化する電圧信号の周波数成分を算出する算出手段をさらに有し、
前記物性情報取得手段は、前記積層構造体の前記時間的に変化する電圧信号の周波数成分と、前記各単層構造体の時間的に変化する電圧信号の周波数成分を比較することで、前記積層構造体の各層の電子物性情報又は各層間界面の電子物性情報を取得する半導体非破壊検査装置である。 In the present invention,
The frequency component of the voltage signal that changes with time of the stacked structure and the frequency component of the voltage signal that changes with time of each single-layer structure that forms the stacked structure prepared in advance as reference data are calculated. A calculation means;
The physical property information acquisition means compares the time-dependent frequency signal frequency component of the multilayer structure with the time-varying voltage signal frequency component of each of the single-layer structures. It is a semiconductor nondestructive inspection apparatus that acquires electronic physical property information of each layer of a structure or electronic physical property information of each interlayer interface.
本発明においては、
前記パルスレーザー光の中心波長を変化させる波長変化手段をさらに有する半導体非破壊検査装置である。 In the present invention,
The semiconductor nondestructive inspection apparatus further includes wavelength changing means for changing a center wavelength of the pulse laser beam.
前記パルスレーザー光の中心波長を変化させる波長変化手段をさらに有する半導体非破壊検査装置である。 In the present invention,
The semiconductor nondestructive inspection apparatus further includes wavelength changing means for changing a center wavelength of the pulse laser beam.
本発明においては、
前記積層構造体に前記ポンプ光を照射して、2次元的に走査する走査手段をさらに有する半導体非破壊検査装置である。 In the present invention,
The semiconductor nondestructive inspection apparatus further includes a scanning unit that irradiates the pump structure with the pump light and performs two-dimensional scanning.
前記積層構造体に前記ポンプ光を照射して、2次元的に走査する走査手段をさらに有する半導体非破壊検査装置である。 In the present invention,
The semiconductor nondestructive inspection apparatus further includes a scanning unit that irradiates the pump structure with the pump light and performs two-dimensional scanning.
本発明においては、
前記パルスレーザー光の偏光方向を任意の角度に回転させる機構をさらに有する半導体非破壊検査装置である。 In the present invention,
The semiconductor nondestructive inspection apparatus further includes a mechanism for rotating the polarization direction of the pulsed laser light to an arbitrary angle.
前記パルスレーザー光の偏光方向を任意の角度に回転させる機構をさらに有する半導体非破壊検査装置である。 In the present invention,
The semiconductor nondestructive inspection apparatus further includes a mechanism for rotating the polarization direction of the pulsed laser light to an arbitrary angle.
本発明においては、
前記半導体非破壊検査装置を用いて、半導体層を含む積層構造体に対して所定の波長を有するパルスレーザー光を照射し、当該パルスレーザー光照射位置から放射される電磁波により前記積層構造体を非破壊で検査する半導体非破壊検査方法であって、
前記パルスレーザー光をプローブ光とポンプ光とに2分割する分割工程と、
前記ポンプ光を前記積層構造体に照射し、前記積層構造体から放射される電磁波を集光して、前記検出素子に入射させる入射工程と、
前記プローブ光を、所定の周期にて時間遅延させながら、前記ポンプ光により放射された前記パルス電磁波の入射と同期させて前記検出素子に照射するプローブ光照射工程と、
前記プローブ光の照射時に前記検出素子に入射した前記ポンプ光による前記パルス電磁波の振幅強度を検出することで、前記積層構造体における遅延時間の異なる複数の前記パルス電磁波の振幅強度を取得して、前記積層構造体における前記パルス電磁波の時系列波形を生成する時系列波形生成工程と、
前記積層構造体に帰属する時系列波形と、予め参照データとして準備した前記積層構造体を構成する各単層構造体に帰属する時系列波形を比較することで、前記積層構造体の各層の電子物性情報又は各層間界面の電子物性情報を取得する工程と、を有する半導体非破壊検査方法である。 In the present invention,
Using the semiconductor nondestructive inspection apparatus, the laminated structure including the semiconductor layer is irradiated with pulsed laser light having a predetermined wavelength, and the laminated structure is made non-magnetic by electromagnetic waves radiated from the irradiation position of the pulsed laser light. A semiconductor nondestructive inspection method for inspecting by destruction,
A splitting step of splitting the pulsed laser light into probe light and pump light;
An incident step of irradiating the laminated structure with the pump light, condensing electromagnetic waves radiated from the laminated structure, and entering the detection element;
A probe light irradiation step of irradiating the detection element in synchronization with the incidence of the pulsed electromagnetic wave emitted by the pump light while delaying the probe light at a predetermined period of time,
By detecting the amplitude intensity of the pulse electromagnetic wave due to the pump light incident on the detection element at the time of irradiation of the probe light, obtaining the amplitude intensity of the plurality of pulse electromagnetic waves having different delay times in the laminated structure, A time-series waveform generating step for generating a time-series waveform of the pulse electromagnetic wave in the laminated structure;
By comparing the time-series waveform belonging to the laminated structure with the time-series waveform belonging to each single-layer structure constituting the laminated structure prepared in advance as reference data, the electrons of each layer of the laminated structure A physical non-destructive inspection method comprising: obtaining physical property information or electronic physical property information of each interlayer interface.
前記半導体非破壊検査装置を用いて、半導体層を含む積層構造体に対して所定の波長を有するパルスレーザー光を照射し、当該パルスレーザー光照射位置から放射される電磁波により前記積層構造体を非破壊で検査する半導体非破壊検査方法であって、
前記パルスレーザー光をプローブ光とポンプ光とに2分割する分割工程と、
前記ポンプ光を前記積層構造体に照射し、前記積層構造体から放射される電磁波を集光して、前記検出素子に入射させる入射工程と、
前記プローブ光を、所定の周期にて時間遅延させながら、前記ポンプ光により放射された前記パルス電磁波の入射と同期させて前記検出素子に照射するプローブ光照射工程と、
前記プローブ光の照射時に前記検出素子に入射した前記ポンプ光による前記パルス電磁波の振幅強度を検出することで、前記積層構造体における遅延時間の異なる複数の前記パルス電磁波の振幅強度を取得して、前記積層構造体における前記パルス電磁波の時系列波形を生成する時系列波形生成工程と、
前記積層構造体に帰属する時系列波形と、予め参照データとして準備した前記積層構造体を構成する各単層構造体に帰属する時系列波形を比較することで、前記積層構造体の各層の電子物性情報又は各層間界面の電子物性情報を取得する工程と、を有する半導体非破壊検査方法である。 In the present invention,
Using the semiconductor nondestructive inspection apparatus, the laminated structure including the semiconductor layer is irradiated with pulsed laser light having a predetermined wavelength, and the laminated structure is made non-magnetic by electromagnetic waves radiated from the irradiation position of the pulsed laser light. A semiconductor nondestructive inspection method for inspecting by destruction,
A splitting step of splitting the pulsed laser light into probe light and pump light;
An incident step of irradiating the laminated structure with the pump light, condensing electromagnetic waves radiated from the laminated structure, and entering the detection element;
A probe light irradiation step of irradiating the detection element in synchronization with the incidence of the pulsed electromagnetic wave emitted by the pump light while delaying the probe light at a predetermined period of time,
By detecting the amplitude intensity of the pulse electromagnetic wave due to the pump light incident on the detection element at the time of irradiation of the probe light, obtaining the amplitude intensity of the plurality of pulse electromagnetic waves having different delay times in the laminated structure, A time-series waveform generating step for generating a time-series waveform of the pulse electromagnetic wave in the laminated structure;
By comparing the time-series waveform belonging to the laminated structure with the time-series waveform belonging to each single-layer structure constituting the laminated structure prepared in advance as reference data, the electrons of each layer of the laminated structure A physical non-destructive inspection method comprising: obtaining physical property information or electronic physical property information of each interlayer interface.
本発明によれば、半導体ウェハや半導体デバイス等の半導体層を含む積層構造体において、非破壊非接触で当該積層構造体の各層の電子物性情報や各層間界面の電子物性情報を含む信号を取得することができる。
According to the present invention, in a laminated structure including a semiconductor layer such as a semiconductor wafer or a semiconductor device, a signal including electronic physical property information of each layer of the laminated structure and electronic physical property information of each interlayer interface is obtained in a non-destructive non-contact manner. can do.
以下、本発明の最良の実施形態を図面を参照して説明する。なお、各図において共通する部分には、同一の符号を付し、重複した説明を省略する。
Hereinafter, the best embodiment of the present invention will be described with reference to the drawings. In addition, the same code | symbol is attached | subjected to the part which is common in each figure, and the overlapping description is abbreviate | omitted.
図1に、本発明に係る半導体非破壊検査装置の実施例を示す。
FIG. 1 shows an embodiment of a semiconductor nondestructive inspection apparatus according to the present invention.
半導体非破壊検査装置1は、半導体層を含む積層構造体である半導体ウェハ5に対して所定の波長を有するパルスレーザー光を照射し、当該パルスレーザー光照射位置から放射されるパルス電磁波10を解析することにより前記半導体ウェハ5を非破壊かつ非接触で検査する非破壊検査装置である。ここで、「半導体層を含む積層構造体」とは、少なくとも1層の半導体層を含む積層構造体であって、例えば、積層構造を有する、半導体ウェハ、半導体デバイス及び半導体素子等のことを指す。
The semiconductor nondestructive inspection apparatus 1 irradiates a pulsed laser beam having a predetermined wavelength onto a semiconductor wafer 5 that is a laminated structure including a semiconductor layer, and analyzes a pulsed electromagnetic wave 10 emitted from the pulsed laser beam irradiation position. This is a nondestructive inspection apparatus for inspecting the semiconductor wafer 5 in a nondestructive and noncontact manner. Here, the “laminated structure including a semiconductor layer” is a stacked structure including at least one semiconductor layer, and refers to, for example, a semiconductor wafer, a semiconductor device, a semiconductor element, or the like having a stacked structure. .
半導体非破壊検査装置1は、パルスレーザー光源2から照射されたパルスレーザー光9をプローブ光L1とポンプ光L2とに2分割するレーザー光分割手段(ビームスプリッタ14)と、前記半導体ウェハ5の一面の所定の位置に前記ポンプ光L2を照射することで、当該ポンプ光L2照射位置からパルス電磁波10を放射させる手段(パルスレーザー光源2)と、半導体ウェハ5に前記ポンプ光L2を照射して、2次元的に走査する走査手段(走査台7、パルスレーザー光源2)と、前記半導体ウェハ5の前記ポンプ光L2照射位置から放射される前記パルス電磁波10の振幅強度を検出し、前記パルス電磁波10の振幅強度の時間波形に対応した時間的に変化する電圧信号に変換する検出・変換手段(検出・変換装置4)と、前記プローブ光L1の光路に配置され、前記検出・変換装置4にて前記振幅強度が検出される時間を周期的に遅延可能である時間遅延手段15と、前記時間的に変化する電圧信号と、予め参照データとして準備した前記半導体ウェハ5を構成する各単層構造体の時間的に変化する電圧信号を比較することで、前記半導体ウェハ5の各層の電子物性情報又は各層間界面の電子物性情報を取得する物性情報取得手段(制御・解析装置8)と、を有する。以下、本発明に係る原理、及び、装置構成の詳細について説明する。
The semiconductor nondestructive inspection apparatus 1 includes a laser beam splitting means (beam splitter 14) that splits a pulse laser beam 9 irradiated from a pulse laser light source 2 into a probe beam L1 and a pump beam L2, and one surface of the semiconductor wafer 5 By irradiating the pump light L2 to the predetermined position of the laser beam, the means for radiating the pulse electromagnetic wave 10 from the irradiation position of the pump light L2 (pulse laser light source 2), the semiconductor wafer 5 is irradiated with the pump light L2, A scanning means (scanning table 7, pulsed laser light source 2) for two-dimensional scanning, and amplitude intensity of the pulsed electromagnetic wave 10 emitted from the irradiation position of the pump light L2 on the semiconductor wafer 5 are detected, and the pulsed electromagnetic wave 10 Detecting / converting means (detecting / converting device 4) for converting to a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of Time delay means 15 arranged in the optical path of the light beam L1 and capable of periodically delaying the time when the amplitude intensity is detected by the detection / conversion device 4, the time-varying voltage signal, By comparing the time-varying voltage signals of the single-layer structures constituting the semiconductor wafer 5 prepared as reference data, the electronic physical property information of each layer of the semiconductor wafer 5 or the electronic physical property information of each interlayer interface is obtained. Physical property information acquisition means (control / analysis device 8) to be acquired. The principle of the present invention and the details of the device configuration will be described below.
前記検出・変換手段(検出・変換装置4)は、具体的には、前記ポンプ光L2照射位置から放射される前記パルス電磁波10が入射され、当該入射されたパルス電磁波10の振幅強度に応じた電流を発生させる検出素子19と、当該検出素子19に接続され、当該検出素子19で発生した電流を電圧に変換する電流アンプ27と、当該電流アンプ27に接続され、当該電流アンプ27で変換された電圧を前記パルス電磁波10の振幅強度の時間波形に対応した時間的に変化する電圧信号に変換するロックインアンプ28と、から構成される。また、前記時間遅延手段15は、前記プローブ光L1の光路に配置され、前記検出素子19に前記パルス電磁波10が入射する時間を周期的に遅延可能である。
なお、本発明における「電子物性情報」とは、前述した半導体ウェハ等の「半導体層を含む積層構造体」における固体電子物性に関する物性値などの情報である。このような「電子物性情報」としては、特に限定するものではないが、例えば、半導体のキャリア濃度、キャリア(電子、正孔)の移動度、キャリア寿命、原子配列(結晶方向に関する情報)、有効質量(m*)、及び層間電界分布などが挙げられる。 Specifically, the detection / conversion means (detection / conversion device 4) receives the pulseelectromagnetic wave 10 emitted from the irradiation position of the pump light L2, and responds to the amplitude intensity of the incident pulse electromagnetic wave 10. A detection element 19 that generates a current, a current amplifier 27 that is connected to the detection element 19 and converts the current generated in the detection element 19 into a voltage, and is connected to the current amplifier 27 and is converted by the current amplifier 27. And a lock-in amplifier 28 for converting the voltage into a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of the pulse electromagnetic wave 10. The time delay means 15 is arranged in the optical path of the probe light L1, and can periodically delay the time that the pulse electromagnetic wave 10 is incident on the detection element 19.
The “electronic physical property information” in the present invention is information such as physical property values relating to solid electronic physical properties in the “laminated structure including a semiconductor layer” such as the semiconductor wafer described above. Such “electronic property information” is not particularly limited, but for example, semiconductor carrier concentration, carrier (electron, hole) mobility, carrier lifetime, atomic arrangement (information on crystal orientation), effective Examples include mass (m * ) and interlayer electric field distribution.
なお、本発明における「電子物性情報」とは、前述した半導体ウェハ等の「半導体層を含む積層構造体」における固体電子物性に関する物性値などの情報である。このような「電子物性情報」としては、特に限定するものではないが、例えば、半導体のキャリア濃度、キャリア(電子、正孔)の移動度、キャリア寿命、原子配列(結晶方向に関する情報)、有効質量(m*)、及び層間電界分布などが挙げられる。 Specifically, the detection / conversion means (detection / conversion device 4) receives the pulse
The “electronic physical property information” in the present invention is information such as physical property values relating to solid electronic physical properties in the “laminated structure including a semiconductor layer” such as the semiconductor wafer described above. Such “electronic property information” is not particularly limited, but for example, semiconductor carrier concentration, carrier (electron, hole) mobility, carrier lifetime, atomic arrangement (information on crystal orientation), effective Examples include mass (m * ) and interlayer electric field distribution.
先ず、レーザー光照射による電磁波の発生原理を説明する。半導体中(本実施形態では半導体ウェハ5中)の電場Eが存在する場所に、バンドギャップよりも大きなエネルギーをもつレーザー光を照射すると、光励起による電子・正孔対が生成し、その電子・正孔対が電場Eによって加速されるために電流が発生する。レーザー光が連続光の場合は、定常的な電流が流れるが、レーザー光がパルス光の場合には、励起された電子・正孔対はある一定の時間で緩和し、電流も流れなくなるため、光パルスの幅と緩和時間に依存して、パルス状の電流が流れる。古典電磁気学のMaxwellの方程式から導出される下記(1)式によれば、半導体に流れる電流に時間変化が発生した場合、該半導体より電磁波が放射される。
First, the principle of generation of electromagnetic waves by laser light irradiation will be described. When a laser beam having energy larger than the band gap is irradiated to a place where an electric field E exists in a semiconductor (in the semiconductor wafer 5 in this embodiment), an electron / hole pair is generated by photoexcitation. As the hole pair is accelerated by the electric field E, a current is generated. When the laser beam is continuous light, a steady current flows, but when the laser beam is pulsed light, the excited electron-hole pairs relax in a certain time, and the current stops flowing. Depending on the width of the light pulse and the relaxation time, a pulsed current flows. According to the following equation (1) derived from the Maxwell equation of classical electromagnetism, when a time change occurs in the current flowing through the semiconductor, electromagnetic waves are emitted from the semiconductor.
上記(1)式において、Eemissionは、電磁波の電界ベクトル、Jは、光電流密度ベクトル、nは、光励起された電子・正孔対の密度、eは、素電荷量、vは、光が照射された位置における半導体中の電場Elocalによって加速された電子・正孔対のドリフト速度、μは、電荷の移動度である。
In the above equation (1), E emission is the electric field vector of the electromagnetic wave, J is the photocurrent density vector, n is the density of the photoexcited electron / hole pair, e is the elementary charge amount, and v is the light The drift velocity μ of the electron-hole pair accelerated by the electric field E local in the semiconductor at the irradiated position is the charge mobility.
(1)式からわかるように、発生する電磁波の振幅強度は、光が照射された位置における半導体中の電場Elocalに比例する。
As can be seen from the equation (1), the amplitude intensity of the generated electromagnetic wave is proportional to the electric field E local in the semiconductor at the position irradiated with light.
次に、本願発明者が鋭意研究の結果、新たに見出した現象について図2から図4を用いて説明する。本発明はこの新たに見出した現象の知見に基づいてなされたものである。
Next, the phenomenon newly found by the inventor as a result of earnest research will be described with reference to FIGS. The present invention has been made on the basis of this newly found phenomenon.
図2は、前記半導体ウェハ5の概要図である。半導体ウェハ5は、円盤状で積層構造を有する。半導体ウェハ5は、p-Si基板(p型シリコン基板)と、当該p-Si基板上にホモエピタキシャル成長により形成されたSiバッファ層(以下、Si層という)と、当該Si層上にエピタキシャル成長により形成されたSiGe層と、を具備する。すなわち、半導体ウェハ5は、p-Si基板と、該p-Si基板の一端面(図2においては上端面)に当接するように形成され、所定の厚さを有するSi層と、該Si層の一端面(図2においては上端面)に当接するように形成され、所定の厚さを有するSiGe層と、を有する。なお、p-Si基板は、Si層及びSiGe層に比べて十分な厚さを有し、Si層及びSiGe層を安定して保持する基板である。
FIG. 2 is a schematic diagram of the semiconductor wafer 5. The semiconductor wafer 5 has a disk shape and a laminated structure. The semiconductor wafer 5 is formed by a p-Si substrate (p-type silicon substrate), a Si buffer layer (hereinafter referred to as an Si layer) formed by homoepitaxial growth on the p-Si substrate, and an epitaxial growth on the Si layer. An SiGe layer formed. That is, the semiconductor wafer 5 is formed to be in contact with a p-Si substrate, one end surface (the upper end surface in FIG. 2) of the p-Si substrate, and has a predetermined thickness, and the Si layer And an SiGe layer having a predetermined thickness formed so as to abut one end face (the upper end face in FIG. 2). Note that the p-Si substrate is a substrate having a sufficient thickness as compared with the Si layer and the SiGe layer and stably holding the Si layer and the SiGe layer.
本願発明者は、図2に示す所定の積層構造を有する半導体ウェハ5(SiGe層/Siバッファ層/p-Si基板からなる積層構造体)をSIMS(Secondary Ionization Mass Spectrometer)にて測定した。図3は、当該半導体ウェハ5についてのSIMS評価結果を示す図であり、横軸は深さ(nm)を示しており、縦軸右側はGe(ゲルマニウム)濃度(atom%)、縦軸左側はB(ホウ素)濃度(atom%)を示している。図3に示すように、SiGe層とSi層との界面F1、及びSi層とp-Si基板の界面F2においてB濃度が高くなっている。これは、各層間界面F1、F2へのB吸着やB拡散が起こっていることを示したものであり、界面F1、F2においてB汚染が起こっていることがわかる。このようなB汚染は、半導体デバイスを製造するに際し、種々のルートからのBのコンタミネーションによるものであることは知られている(特開平10-32172号公報参照)。すなわち、特開平10-32172号公報に記載されているように、各層間の界面のB汚染により、半導体デバイスの電気特性に悪影響を及ぼす問題があることが知られている。
The inventor of the present application measured a semiconductor wafer 5 (laminated structure composed of SiGe layer / Si buffer layer / p-Si substrate) having a predetermined laminated structure shown in FIG. 2 by SIMS (Secondary Ionization Mass Spectrometer). FIG. 3 is a diagram showing the SIMS evaluation results for the semiconductor wafer 5, where the horizontal axis indicates the depth (nm), the right side of the vertical axis is Ge (germanium) concentration (atom%), and the left side of the vertical axis is B (boron) concentration (atom%) is shown. As shown in FIG. 3, the B concentration is high at the interface F1 between the SiGe layer and the Si layer and at the interface F2 between the Si layer and the p-Si substrate. This indicates that B adsorption and B diffusion are occurring at each of the interlayer interfaces F1 and F2, and it can be seen that B contamination occurs at the interfaces F1 and F2. It is known that such B contamination is caused by contamination of B from various routes when manufacturing a semiconductor device (see Japanese Patent Laid-Open No. 10-32172). That is, as described in Japanese Patent Application Laid-Open No. 10-32172, it is known that there is a problem of adversely affecting the electrical characteristics of a semiconductor device due to B contamination at the interface between layers.
本願発明者は、上記半導体ウェハ5に対して、パルスレーザー光を照射すると、当該半導体ウェハ5の2つの界面であるSiGe層とSi層との界面F1、及びSi層とp-Si基板の界面F2に対応する領域から電磁波が放射される現象を確認した(図4参照)。この現象を図4を用いて、以下に詳しく説明する。
When the present inventor irradiates the semiconductor wafer 5 with pulsed laser light, the interface F1 between the SiGe layer and the Si layer, which is the two interfaces of the semiconductor wafer 5, and the interface between the Si layer and the p-Si substrate. The phenomenon in which electromagnetic waves were radiated from the region corresponding to F2 was confirmed (see FIG. 4). This phenomenon will be described in detail below with reference to FIG.
図4は、半導体ウェハ5のエネルギーバンド構造を示す図であり、横軸は位置(深さ方向)を示しており、縦軸はエネルギーを示している。また、図中のECは伝導帯であり、EVは価電子帯である。第1層部(上記半導体ウェハ5では、SiGe層)と第2層部(上記半導体ウェハ5では、Si層)、及び第2層部と第3層部(上記半導体ウェハ5では、p-Si基板)の各境界となる界面には、空乏層が形成される。空乏層とは、キャリアが存在しない領域であり、該空乏層には局所電界E(界面F1近傍には局所電界EI、界面F2近傍には局所電界EII)が形成されている。したがって、外部から電圧を印加しなくても、空乏層には定常的に電界が存在していることになる。この空乏層に光を照射し、電子・正孔対を生成すると、(1)式にしたがって、電磁波が発生する。つまり、SiGe層とSi層との界面F1、及びSi層とp-Si基板の界面F2のそれぞれに空乏層が形成され、当該各空乏層に光を照射すると、電子・正孔対を生成し、(1)式にしたがって、電磁波が界面F1、界面F2の各界面から放射される。
FIG. 4 is a diagram showing the energy band structure of the semiconductor wafer 5, where the horizontal axis indicates the position (depth direction) and the vertical axis indicates the energy. Moreover, EC in the figure is a conduction band, and EV is a valence band. The first layer portion (SiGe layer in the semiconductor wafer 5) and the second layer portion (Si layer in the semiconductor wafer 5), and the second layer portion and the third layer portion (p-Si in the semiconductor wafer 5). A depletion layer is formed at each interface that is a boundary of the substrate. The depletion layer is a region where no carrier exists, and a local electric field E (local electric field E I near the interface F1 and local electric field E II near the interface F2) is formed in the depletion layer. Accordingly, an electric field constantly exists in the depletion layer without applying a voltage from the outside. When this depletion layer is irradiated with light to generate electron / hole pairs, electromagnetic waves are generated according to the equation (1). That is, a depletion layer is formed in each of the interface F1 between the SiGe layer and the Si layer and the interface F2 between the Si layer and the p-Si substrate, and when each depletion layer is irradiated with light, an electron-hole pair is generated. , (1), electromagnetic waves are radiated from the interfaces F1 and F2.
ここで、上記のように、複数の界面から電磁波が発生する原理において特に重要な点は、上記半導体ウェハ5のような半導体層を含む積層構造体における界面F1、F2のそれぞれに対応する局所電界EI、EIIが形成されていることである。局所電界EI、EIIの向き及び大きさは、当該半導体ウェハ5における各層間の境界である界面の物性状態(例えば、上記半導体ウェハ5では界面F1、F2のB汚染状態等)よって変わる。また、界面の物性状態だけではなく、当該半導体ウェハ5の各層に由来する物性状態(例えば、半導体ウェハ5では、SiGe層中のGe濃度)によって変わるものである。このように、界面の物性状態や各層の物性状態によって当該局所電界EI、EIIの向き及び大きさも変わり、これに応じてレーザー光照射時に放射される電磁波の振幅強度も変化する。つまり、この電磁波の振幅強度が半導体ウェハ5における各層や各層間界面の物性状態の変化を表すことになる。
Here, as described above, a particularly important point in the principle that electromagnetic waves are generated from a plurality of interfaces is that the local electric field corresponding to each of the interfaces F1 and F2 in the laminated structure including the semiconductor layer such as the semiconductor wafer 5 described above. E I and E II are formed. The directions and magnitudes of the local electric fields E I and E II vary depending on the physical state of the interface that is a boundary between the layers in the semiconductor wafer 5 (for example, the B contamination state of the interfaces F1 and F2 in the semiconductor wafer 5). Further, not only the physical state of the interface but also the physical state derived from each layer of the semiconductor wafer 5 (for example, the Ge concentration in the SiGe layer in the semiconductor wafer 5). As described above, the directions and magnitudes of the local electric fields E I and E II change depending on the physical state of the interface and the physical state of each layer, and the amplitude intensity of the electromagnetic wave radiated during laser light irradiation also changes accordingly. That is, the amplitude intensity of the electromagnetic wave represents a change in the physical property state of each layer or each interlayer interface in the semiconductor wafer 5.
具体的には、図3に示すSIMS評価結果と図4に示すエネルギーバンド構造は対応しており、図3に示す界面F1、F2に吸着しているB濃度に応じて、図4に示す界面F1、F2のエネルギーレベルが変化するため、界面F1、F2に形成される各空乏層の局所電界EI、EIIもそれぞれ変化し、局所電界EI、EIIのそれぞれに比例する前記パルス電磁波の各振幅強度も変化することになる。図4においては、点線丸印で囲んだ領域が局所電界EI、EIIが形成されている領域であり、パルスレーザー光を照射した際にパルス電磁波(テラヘルツ波)が放射されるTHz放射領域となる。半導体ウェハ5は、p-Si基板を含めると三つの層からなるものであり、界面が2つ存在する。例えば、半導体ウェハ5にパルスレーザー光を照射した場合に、照射位置から放射されるパルス電磁波は、図2に示す半導体ウェハ5の場合、界面F1近傍によるTHz放射Iと界面F2近傍によるTHz放射IIとを合算したものとして観測される。また、図2に示す半導体ウェハ5においてSiGe層がない場合、つまり、p-Si基板の上にSi層のみを有する場合では、THz放射IIのみからなる電磁波の振幅強度として観測される。さらに、これらTHz放射I、IIにおけるパルス電磁波の各振幅強度の時間波形に対応した電圧信号を算出して解析すれば、界面F1近傍、界面F2近傍のそれぞれに吸着しているB濃度との関係が明らかとなる。このように、本願発明者は、半導体ウェハ5の各層間の界面物性(例えば、界面に吸着したB濃度)や半導体ウェハ5の各層の物性状態(具体例は後述するが、例えば、SiGe層中のGe組成)と、半導体ウェハ5にパルスレーザー光を照射した際に放射されるパルス電磁波の振幅強度の時間波形に対応した電圧信号との間に所定の関係があることを見出した。さらに、本発明では、この新しく見出した知見を活かし、半導体ウェハ等の積層構造体の深さ方向(積層方向)の複数箇所の界面や各層から同時に電磁波が発生している場合でも、積層構造体の各界面や各層に帰属する、電磁波の振幅強度の時間波形に対応する電圧信号として取得し、当該電圧信号を積層構造体の各界面や各層に帰属する種々の物性情報(例えば、後述する半導体ウェハにおける不純物の濃度)と関連付けて解析することで、半導体ウェハ等の半導体層を含む積層構造体を検査することができる新しい技術を見出したものである。
なお、上記電圧信号に関連付けて解析する物性情報としては、上記のように半導体層を含む積層構造体の各界面や各層に存在する物質濃度に限定するものではなく、半導体物性であるキャリア寿命、電子移動度、層間電界分布、及び結晶方向等も挙げられる。 Specifically, the SIMS evaluation result shown in FIG. 3 and the energy band structure shown in FIG. 4 correspond to each other, and the interface shown in FIG. 4 depends on the B concentration adsorbed on the interfaces F1 and F2 shown in FIG. since the energy levels of the F1, F2 is changed, the interface F1, the local electric field in the depletion layer formed in the F2 E I, E II also changes respectively, the pulse wave which is proportional to each of the local electric field E I, E II Each of the amplitude intensities also changes. In FIG. 4, a region surrounded by dotted circles is a region where local electric fields E I and E II are formed, and a THz radiation region where a pulsed electromagnetic wave (terahertz wave) is emitted when irradiated with pulsed laser light. It becomes. Thesemiconductor wafer 5 includes three layers including the p-Si substrate, and there are two interfaces. For example, when the semiconductor wafer 5 is irradiated with pulsed laser light, the pulse electromagnetic wave radiated from the irradiation position is THz radiation I near the interface F1 and THz radiation II near the interface F2 in the case of the semiconductor wafer 5 shown in FIG. Observed as the sum of. Further, when there is no SiGe layer in the semiconductor wafer 5 shown in FIG. 2, that is, when only the Si layer is provided on the p-Si substrate, it is observed as the amplitude intensity of the electromagnetic wave consisting only of THz radiation II. Furthermore, if a voltage signal corresponding to the time waveform of each amplitude intensity of the pulse electromagnetic wave in these THz radiations I and II is calculated and analyzed, the relationship with the B concentration adsorbed in the vicinity of the interface F1 and in the vicinity of the interface F2 respectively. Becomes clear. As described above, the inventor of the present application described the interface physical properties between the respective layers of the semiconductor wafer 5 (for example, B concentration adsorbed on the interface) and the physical properties of the respective layers of the semiconductor wafer 5 (specific examples will be described later. And a voltage signal corresponding to the time waveform of the amplitude intensity of the pulse electromagnetic wave emitted when the semiconductor wafer 5 is irradiated with the pulse laser beam. Furthermore, in the present invention, even when electromagnetic waves are generated simultaneously from the interfaces and multiple layers in the depth direction (lamination direction) of the laminated structure such as a semiconductor wafer, the laminated structure is made use of this newly found knowledge. Is acquired as a voltage signal corresponding to the time waveform of the amplitude intensity of the electromagnetic wave belonging to each interface or each layer of the layer, and the physical properties information belonging to each interface or each layer of the laminated structure (for example, a semiconductor described later) The present inventors have found a new technique capable of inspecting a laminated structure including a semiconductor layer such as a semiconductor wafer by performing analysis in association with the concentration of impurities in the wafer.
Note that the physical property information to be analyzed in association with the voltage signal is not limited to the substance concentration existing in each interface or each layer of the laminated structure including the semiconductor layer as described above, but is a carrier life that is a semiconductor physical property, Electron mobility, interlayer electric field distribution, crystal direction, and the like are also included.
なお、上記電圧信号に関連付けて解析する物性情報としては、上記のように半導体層を含む積層構造体の各界面や各層に存在する物質濃度に限定するものではなく、半導体物性であるキャリア寿命、電子移動度、層間電界分布、及び結晶方向等も挙げられる。 Specifically, the SIMS evaluation result shown in FIG. 3 and the energy band structure shown in FIG. 4 correspond to each other, and the interface shown in FIG. 4 depends on the B concentration adsorbed on the interfaces F1 and F2 shown in FIG. since the energy levels of the F1, F2 is changed, the interface F1, the local electric field in the depletion layer formed in the F2 E I, E II also changes respectively, the pulse wave which is proportional to each of the local electric field E I, E II Each of the amplitude intensities also changes. In FIG. 4, a region surrounded by dotted circles is a region where local electric fields E I and E II are formed, and a THz radiation region where a pulsed electromagnetic wave (terahertz wave) is emitted when irradiated with pulsed laser light. It becomes. The
Note that the physical property information to be analyzed in association with the voltage signal is not limited to the substance concentration existing in each interface or each layer of the laminated structure including the semiconductor layer as described above, but is a carrier life that is a semiconductor physical property, Electron mobility, interlayer electric field distribution, crystal direction, and the like are also included.
以上のように、本発明では、半導体層を含む積層構造体である半導体ウェハ5にパルスレーザー光9を照射することにより、照射位置から放射されるパルス電磁波の振幅強度を計測し、当該振幅強度による時間波形に対応する電圧信号を取得することで、従来技術のように電圧を印加するために電極構造にすることなく積層構造体の各層の電子物性情報や各層間界面の電子物性情報に関する信号を検出することができる。
As described above, in the present invention, the amplitude intensity of the pulsed electromagnetic wave radiated from the irradiation position is measured by irradiating the semiconductor laser 5 that is a laminated structure including the semiconductor layer with the pulse laser light 9, and the amplitude intensity is measured. By acquiring the voltage signal corresponding to the time waveform by, the signal related to the electronic physical property information of each layer of the laminated structure and the electronic physical property information of each interlayer interface without applying an electrode structure to apply a voltage as in the prior art Can be detected.
以上の原理を用い、図1に示す装置構成によって、半導体ウェハ5の検査が行われる。
図1は、本実施例の半導体非破壊検査装置の概略図である。この図に示すように、本実施例の検査装置1は、照射装置(光学系)、検出・変換装置4、及び制御・解析装置8を備える。 Using the above principle, thesemiconductor wafer 5 is inspected by the apparatus configuration shown in FIG.
FIG. 1 is a schematic view of a semiconductor nondestructive inspection apparatus of this embodiment. As shown in this figure, theinspection device 1 of this embodiment includes an irradiation device (optical system), a detection / conversion device 4, and a control / analysis device 8.
図1は、本実施例の半導体非破壊検査装置の概略図である。この図に示すように、本実施例の検査装置1は、照射装置(光学系)、検出・変換装置4、及び制御・解析装置8を備える。 Using the above principle, the
FIG. 1 is a schematic view of a semiconductor nondestructive inspection apparatus of this embodiment. As shown in this figure, the
図1において照射装置(光学系)は、パルスレーザー光源2、ビームスプリッタ14、時間遅延手段15、光チョッパー16、ポンプ光集光手段18及び、走査台7から主に構成される。照射装置(光学系)は、半導体ウェハ5に所定の波長を有するパルスレーザー光9(ポンプ光L2)を照射する機能を有する。
なお、パルスレーザー光9の方向を変更するために使用した鏡等の構成は、本実施形態に限定するものではなく、各構成部品の配置を考慮して、例えば更に鏡の数を増やす等適宜構成を変更してもかまわない。 In FIG. 1, the irradiation device (optical system) mainly includes a pulselaser light source 2, a beam splitter 14, a time delay unit 15, an optical chopper 16, a pump light condensing unit 18, and a scanning table 7. The irradiation device (optical system) has a function of irradiating the semiconductor wafer 5 with pulsed laser light 9 (pump light L2) having a predetermined wavelength.
Note that the configuration of the mirror and the like used to change the direction of thepulse laser beam 9 is not limited to the present embodiment. Considering the arrangement of each component, for example, the number of mirrors may be increased as appropriate. You can change the configuration.
なお、パルスレーザー光9の方向を変更するために使用した鏡等の構成は、本実施形態に限定するものではなく、各構成部品の配置を考慮して、例えば更に鏡の数を増やす等適宜構成を変更してもかまわない。 In FIG. 1, the irradiation device (optical system) mainly includes a pulse
Note that the configuration of the mirror and the like used to change the direction of the
さらに、照射装置は、パルスレーザー光9を照射して2次元的に走査する走査手段を有する。つまり、走査手段は、前記走査台7において、図示しない駆動装置を用いて前記半導体ウェハ5を走査台7(XY自動ステージ)上で往復移動させつつ、パルスレーザー光9を前記半導体ウェハ5に向けて照射する機能を有している。前記走査手段により前記半導体ウェハ5にパルスレーザー光9を照射して、2次元的に走査することで、前記積層構造体の電子物性情報の分布を取得することができる。
Furthermore, the irradiation apparatus has a scanning means for two-dimensional scanning by irradiating the pulse laser beam 9. That is, the scanning unit directs the pulse laser beam 9 toward the semiconductor wafer 5 while reciprocating the semiconductor wafer 5 on the scanning stage 7 (XY automatic stage) using a driving device (not shown) on the scanning stage 7. It has a function to irradiate. By irradiating the semiconductor wafer 5 with the pulsed laser light 9 by the scanning means and scanning two-dimensionally, it is possible to acquire the distribution of the electronic property information of the stacked structure.
また、このパルスレーザー光9の分割光であるポンプ光L2は、図5に示すごとく、半導体ウェハ5のレーザー光照射面に対して照射されるものであり、前記走査台7に固定された半導体ウェハ5を動かすことによって、ポンプ光L2が照射される位置に、半導体ウェハ5を移動して、半導体ウェハ5のレーザー光照射面が走査されるようにし、ポンプ光L2を照射すると半導体ウェハ5のレーザー光照射位置から、連続的に、パルス電磁波10が放射される。
Further, as shown in FIG. 5, the pump light L <b> 2 that is a split light of the pulse laser light 9 is irradiated onto the laser light irradiation surface of the semiconductor wafer 5, and is a semiconductor fixed to the scanning table 7. By moving the wafer 5, the semiconductor wafer 5 is moved to a position where the pump light L2 is irradiated so that the laser light irradiation surface of the semiconductor wafer 5 is scanned. A pulsed electromagnetic wave 10 is continuously emitted from the laser light irradiation position.
なお、走査する構成はこの実施例の構成に限定されず、図示しない揺動または回転するミラー等により、パルスレーザー光9を半導体ウェハ5の上で2次元的に走査したり、パルスレーザー光源2を揺動したりして照射してもよい。
The scanning configuration is not limited to the configuration of this embodiment, and the pulse laser beam 9 is scanned two-dimensionally on the semiconductor wafer 5 by a swinging or rotating mirror (not shown) or the pulse laser light source 2 Or may be irradiated.
また、図1に示すごとく、本実施例では、パルスレーザー光9とパルス電磁波10の経路によってなす面を略水平面とする構成、即ち、図1は上面視の構成であり、この構成を側面から見た場合に、前記パルスレーザー光9とパルス電磁波10が略水平面をなすような配置構成としているが、各装置の形状及び固定方法によって適宜設定することが望ましく、前記略水平面を構成する必要はない。
Further, as shown in FIG. 1, in this embodiment, the plane formed by the path of the pulse laser beam 9 and the pulse electromagnetic wave 10 is a substantially horizontal plane, that is, FIG. 1 is a top view configuration. When viewed, the arrangement is such that the pulse laser beam 9 and the pulse electromagnetic wave 10 form a substantially horizontal plane, but it is desirable to appropriately set the shape and fixing method of each device, and it is necessary to configure the substantially horizontal plane. Absent.
前記パルスレーザー光9の分割光であるポンプ光L2の半導体ウェハ5への入射角は、パルスレーザー光9(ポンプ光L2)の有する波長が、半導体ウェハ5へ最も吸収される角度とすることが好ましい(本実施形態における入射角45°)。ただし、各装置の形状及び固定方法によっては、この角度に限定する必要はなく、特に限定されるものではない。
The incident angle of the pump light L2 that is a split light of the pulse laser light 9 to the semiconductor wafer 5 is an angle at which the wavelength of the pulse laser light 9 (pump light L2) is most absorbed by the semiconductor wafer 5. Preferred (incident angle 45 ° in this embodiment). However, depending on the shape and fixing method of each device, it is not necessary to limit to this angle, and there is no particular limitation.
パルスレーザー光源2は、パルスレーザー光9を照射する手段である。パルスレーザー光源2は、パルスレーザー光9を前記半導体ウェハ5のレーザー光入射面に照射することで、当該照射位置における物性情報に依存する振幅強度を持ったパルス電磁波10を放射させる手段である。また、本実施例におけるパルスレーザー光源2としては、フェムト秒チタンサファイアレーザー(繰り返し周波数82MHz、出力890MHz、中心波長780nm、パルス幅100fs)を用いる。
The pulse laser light source 2 is a means for irradiating the pulse laser light 9. The pulse laser light source 2 is means for radiating a pulse electromagnetic wave 10 having an amplitude intensity depending on physical property information at the irradiation position by irradiating the laser beam incident surface of the semiconductor wafer 5 with the pulse laser light 9. In addition, as the pulse laser light source 2 in this embodiment, a femtosecond titanium sapphire laser (repetition frequency 82 MHz, output 890 MHz, center wavelength 780 nm, pulse width 100 fs) is used.
また、パルスレーザー光源2は、本実施例の如く、パルスレーザー光9を発生可能なモード同期チタンサファイアレーザー、又はフェムト秒ファイバーレーザであるのがよい。
また、このパルスレーザー光9の波長は、300ナノメートル(300nm=0.3μm)以上、2ミクロン(2μm)以下の範囲に含まれるものであり、時間平均のエネルギーが0.1mW以上、10W以下であり、パルス幅が1フェムト秒(1fs=0.001ps)以上、10ピコ秒(10ps)以下であるのがよい。
すなわち、電磁波の励起に際しては、光源として時間の幅の小さなパルスレーザー光9を用いることにより、半導体ウェハ5に大きな熱的影響を及ぼさない状態で、電磁波の励起ができる。また、特にパルスレーザー光9としてフェムト秒レーザー光を使用することで、高い時間分解能による時間分解計測が可能となり、検査対象である半導体ウェハ5をリアルタイムで観測可能となる。なお、半導体ウェハ5に熱的影響を及ぼさない最大光パルス幅は、約10ピコ秒と見積ることができる。また、フェムト秒レーザーを使用することで、レーザーによる加熱の影響を最小限に抑えることができるという効果がある。 Further, the pulselaser light source 2 may be a mode-locked titanium sapphire laser or a femtosecond fiber laser capable of generating the pulse laser light 9 as in this embodiment.
The wavelength of thepulse laser beam 9 is included in the range of 300 nanometers (300 nm = 0.3 μm) or more and 2 microns (2 μm) or less, and the time average energy is 0.1 mW or more and 10 W or less. The pulse width is preferably 1 femtosecond (1 fs = 0.001 ps) or more and 10 picoseconds (10 ps) or less.
That is, when exciting the electromagnetic wave, the electromagnetic wave can be excited without significantly affecting thesemiconductor wafer 5 by using the pulse laser beam 9 having a small time width as a light source. In particular, by using femtosecond laser light as the pulse laser light 9, time-resolved measurement with high time resolution becomes possible, and the semiconductor wafer 5 to be inspected can be observed in real time. The maximum optical pulse width that does not affect the semiconductor wafer 5 can be estimated to be about 10 picoseconds. In addition, by using a femtosecond laser, there is an effect that the influence of heating by the laser can be minimized.
また、このパルスレーザー光9の波長は、300ナノメートル(300nm=0.3μm)以上、2ミクロン(2μm)以下の範囲に含まれるものであり、時間平均のエネルギーが0.1mW以上、10W以下であり、パルス幅が1フェムト秒(1fs=0.001ps)以上、10ピコ秒(10ps)以下であるのがよい。
すなわち、電磁波の励起に際しては、光源として時間の幅の小さなパルスレーザー光9を用いることにより、半導体ウェハ5に大きな熱的影響を及ぼさない状態で、電磁波の励起ができる。また、特にパルスレーザー光9としてフェムト秒レーザー光を使用することで、高い時間分解能による時間分解計測が可能となり、検査対象である半導体ウェハ5をリアルタイムで観測可能となる。なお、半導体ウェハ5に熱的影響を及ぼさない最大光パルス幅は、約10ピコ秒と見積ることができる。また、フェムト秒レーザーを使用することで、レーザーによる加熱の影響を最小限に抑えることができるという効果がある。 Further, the pulse
The wavelength of the
That is, when exciting the electromagnetic wave, the electromagnetic wave can be excited without significantly affecting the
ビームスプリッタ14は、入射するパルスレーザー光9をプローブ光L1とポンプ光L2とに分割する手段であり、本実施例においては、直進するプローブ光L1に対してポンプ光L2を垂直方向に分割可能であるハーフミラーを用いている。また、プローブ光L1は検査対象である半導体ウェハ5の検査の際の同期を取得するために用いられる光であり、ビームスプリッタ14から時間遅延手段15、鏡31、鏡34、レンズ35を介して前記検出・変換装置4(後述する検出素子19)に照射される。また、ポンプ光L2は、ビームスプリッタ14から鏡29、光チョッパー16、鏡30を介して半導体ウェハ5の照射面に照射される。
The beam splitter 14 is means for dividing the incident pulse laser light 9 into the probe light L1 and the pump light L2. In this embodiment, the pump light L2 can be divided in the vertical direction with respect to the probe light L1 traveling straight. A half mirror is used. The probe light L1 is light used to acquire synchronization at the time of inspection of the semiconductor wafer 5 to be inspected, and is transmitted from the beam splitter 14 via the time delay means 15, the mirror 31, the mirror 34, and the lens 35. The detection / conversion device 4 (detection element 19 described later) is irradiated. Further, the pump light L <b> 2 is applied to the irradiation surface of the semiconductor wafer 5 from the beam splitter 14 through the mirror 29, the optical chopper 16, and the mirror 30.
時間遅延手段15は、前記プローブ光L1の光路に配置され、前記検出・変換装置4にて前記振幅強度が検出される時間を周期的に遅延可能である手段である。すなわち、時間遅延手段15は、前記プローブ光の光路に配置され、前記検出素子19にパルス電磁波10が入射する時間を周期的に遅延可能である手段である。時間遅延手段15は、図示しない駆動手段により周期的に所定方向に移動可能である可動鏡15aと、当該可動鏡15aを保持するステージ15bとを備える。時間遅延手段15は、当該時間遅延手段15に入射されるプローブ光L1を、当該プローブ光L1の入射方向に対して、平行かつ反対方向に反射することができる。こうして、時間遅延手段15は、駆動手段により可動鏡15aをプローブ光L1の入射方向に対して平行かつ周期的に往復移動することによりプローブ光L1の光路長を調節し、光学的に時間遅延することが可能である。また、駆動手段は、制御・解析装置8により制御される。
The time delay means 15 is a means that is arranged in the optical path of the probe light L1 and can periodically delay the time when the amplitude intensity is detected by the detection / conversion device 4. That is, the time delay means 15 is a means that is arranged in the optical path of the probe light and can periodically delay the time that the pulse electromagnetic wave 10 is incident on the detection element 19. The time delay means 15 includes a movable mirror 15a that can be periodically moved in a predetermined direction by a driving means (not shown), and a stage 15b that holds the movable mirror 15a. The time delay unit 15 can reflect the probe light L1 incident on the time delay unit 15 in a direction parallel to and opposite to the incident direction of the probe light L1. Thus, the time delay means 15 adjusts the optical path length of the probe light L1 by optically delaying the movable mirror 15a by reciprocating the movable mirror 15a in parallel and periodically with respect to the incident direction of the probe light L1. It is possible. The driving means is controlled by the control / analysis device 8.
すなわち、時間遅延手段15は、前記プローブ光L1の光路長を調整するための可動鏡15aを周期的に移動させることで所定時間間隔の時間遅延量を付与したプローブ光L1を前記検出・変換装置4(後述する検出素子19)に入射することができる。
That is, the time delay means 15 periodically detects the probe light L1 provided with a time delay amount at a predetermined time interval by moving the movable mirror 15a for adjusting the optical path length of the probe light L1. 4 (detection element 19 to be described later).
光チョッパー16は、ポンプ光L2の光路に配置され、当該ポンプ光L2を所定の周波数にてチョッピングすることが可能である。
The optical chopper 16 is disposed in the optical path of the pump light L2, and can chop the pump light L2 at a predetermined frequency.
検出・変換装置4は、前記半導体ウェハ5の前記パルスレーザー光照射位置から放射される前記パルス電磁波10の振幅強度を検出する手段である。検出・変換装置4は、図1に示すように、電磁波検出手段である検出素子19と、ポンプ光集光手段18と、変換手段と、から構成される。検出・変換装置4は、半導体ウェハ5から放射されたパルス電磁波10をポンプ光集光手段18である軸外し放物面鏡により集光し、この集光されたパルス電磁波10を検出して、パルス電磁波10の振幅強度(電場振幅)の時間波形に対応した時間的に変化する電圧信号(以下、時系列波形ともいう)に変換するものである。
The detection / conversion device 4 is means for detecting the amplitude intensity of the pulse electromagnetic wave 10 emitted from the pulse laser beam irradiation position of the semiconductor wafer 5. As shown in FIG. 1, the detection / conversion device 4 includes a detection element 19 that is an electromagnetic wave detection unit, a pump light condensing unit 18, and a conversion unit. The detection / conversion device 4 condenses the pulsed electromagnetic wave 10 radiated from the semiconductor wafer 5 by an off-axis parabolic mirror that is the pump light condensing means 18, detects the condensed pulsed electromagnetic wave 10, This is converted into a time-varying voltage signal (hereinafter also referred to as a time series waveform) corresponding to the time waveform of the amplitude intensity (electric field amplitude) of the pulse electromagnetic wave 10.
検出素子19は、前記ポンプ光L2照射位置から放射されるパルス電磁波10が入射され、当該入射されたパルス電磁波10の振幅強度に応じた電流を発生させる素子である。検出素子19は、例えば光伝導アンテナ等であり、半導体ウェハ5の照射面におけるポンプ光L2照射位置から発生するパルス電磁波10を入射可能に配置され、当該パルス電磁波10の入射と同期させて、プローブ光L1を検出素子19の所定位置に照射すると、当該照射時に入射したパルス電磁波10の振幅強度に比例した電流が発生する。
The detection element 19 is an element that receives the pulse electromagnetic wave 10 emitted from the irradiation position of the pump light L2 and generates a current corresponding to the amplitude intensity of the incident pulse electromagnetic wave 10. The detection element 19 is, for example, a photoconductive antenna or the like, and is arranged so that the pulse electromagnetic wave 10 generated from the irradiation position of the pump light L2 on the irradiation surface of the semiconductor wafer 5 can enter, and in synchronization with the incidence of the pulse electromagnetic wave 10, the probe 19 When the light L1 is irradiated onto a predetermined position of the detection element 19, a current proportional to the amplitude intensity of the pulse electromagnetic wave 10 incident upon the irradiation is generated.
ポンプ光集光手段18は、一対からなる軸外し放物面鏡であり、検査対象である半導体ウェハ5と検出素子との間に配置して、半導体ウェハ5から放射されたパルス電磁波10を集光して検出素子19の一端に照射するものである。
The pump light condensing means 18 is a pair of off-axis parabolic mirrors, and is arranged between the semiconductor wafer 5 to be inspected and the detection element, and collects the pulse electromagnetic wave 10 radiated from the semiconductor wafer 5. Light is applied to one end of the detection element 19.
変換手段は、検出素子19に接続される電流アンプ27と、当該電流アンプ27に接続されるロックインアンプ28とを備える。電流アンプ27は、前記検出素子19に接続され、前記検出素子19で発生した電流を電圧に変換するものである。ロックインアンプ28は、前記電流アンプ27に接続され、前記電流アンプ27で変換された電圧をパルス電磁波10の振幅強度の時間波形に対応した時間的に変化する電圧信号に変換するものである。また、ロックインアンプ28は光チョッパー16と接続されている。この変換手段では、上記検出素子19にて発生した電流を測定することにより、プローブ光L1が検出素子19に照射した時に入射したパルス電磁波10の振幅強度を検出することが可能である。また、前記パルス電磁波10に含まれる周波数の成分は、10ギガヘルツから100テラヘルツまでの範囲に含まれることとし、これにより、一般的な構成の検出・変換装置4の利用が可能となる。また、本発明に係る半導体非破壊検査装置1を構成する上で、利用するパルス電磁波10としては、ギガヘルツ領域よりもテラヘルツ領域が好ましい。テラヘルツ領域を利用する場合は、ギガヘルツ領域を利用する場合とは異なり、ミラーやレンズ等を使用した光学的な手法により、電磁波を検出器に容易に導くことが可能となる。一方、テラヘルツ領域よりも高周波領域は、いわゆる光になるが、光を利用する場合は、周囲の光と信号の光を区別する手段を備える必要があり、装置が複雑になるため光のようなテラヘルツ領域より高周波となる電磁波を利用するよりも、テラヘルツ領域の電磁波を利用することが好ましい。
The conversion means includes a current amplifier 27 connected to the detection element 19 and a lock-in amplifier 28 connected to the current amplifier 27. The current amplifier 27 is connected to the detection element 19 and converts a current generated in the detection element 19 into a voltage. The lock-in amplifier 28 is connected to the current amplifier 27 and converts the voltage converted by the current amplifier 27 into a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of the pulse electromagnetic wave 10. The lock-in amplifier 28 is connected to the optical chopper 16. In this conversion means, by measuring the current generated in the detection element 19, it is possible to detect the amplitude intensity of the pulsed electromagnetic wave 10 incident when the probe light L1 is applied to the detection element 19. Further, the frequency component included in the pulse electromagnetic wave 10 is included in a range from 10 gigahertz to 100 terahertz, so that the detection / conversion device 4 having a general configuration can be used. Further, in configuring the semiconductor nondestructive inspection apparatus 1 according to the present invention, the terahertz region is preferable to the gigahertz region as the pulse electromagnetic wave 10 to be used. When using the terahertz region, unlike using the gigahertz region, the electromagnetic wave can be easily guided to the detector by an optical technique using a mirror, a lens, or the like. On the other hand, the high-frequency region is more so-called light than the terahertz region. However, when using light, it is necessary to provide a means for distinguishing ambient light from signal light. It is preferable to use electromagnetic waves in the terahertz region rather than using electromagnetic waves having a higher frequency than the terahertz region.
制御・解析装置8は、前記検出・変換装置4の変換手段にて変換した電圧信号から、パルス電磁波10の振幅強度(電圧値)の時系列波形を生成したり、当該生成された時系列波形を用いて所定の解析を行う装置である。また、本実施例では、制御・解析装置8は、本明細書中に説明する制御や解析の実行を可能とする画像表示部を有するコンピュータであり、図示せぬ制御信号線を介して、照射装置(光学系)、走査台7、検出・変換装置4、及び、パルスレーザー光源2の制御も併せて行うものである。また、制御・解析装置8は、前記パルス電磁波10の振幅強度の時系列波形やこれらを用いた解析結果をマップや画像として表示すること(イメージング)ができる装置である。
なお、前記所定の解析としては、パルス電磁波10の振幅強度の時系列波形に基づく画像処理、及び所定のフーリエ変換等の演算処理も含む。 The control /analysis device 8 generates a time series waveform of the amplitude intensity (voltage value) of the pulse electromagnetic wave 10 from the voltage signal converted by the conversion means of the detection / conversion device 4, or the generated time series waveform. This is a device for performing a predetermined analysis using In the present embodiment, the control / analysis device 8 is a computer having an image display unit that enables execution of control and analysis described in this specification, and irradiation is performed via a control signal line (not shown). Control of the device (optical system), the scanning stage 7, the detection / conversion device 4, and the pulsed laser light source 2 is also performed. The control / analysis device 8 is a device capable of displaying (imaging) a time-series waveform of the amplitude intensity of the pulse electromagnetic wave 10 and an analysis result using them as a map or an image.
The predetermined analysis includes image processing based on a time-series waveform of the amplitude intensity of the pulseelectromagnetic wave 10 and arithmetic processing such as predetermined Fourier transform.
なお、前記所定の解析としては、パルス電磁波10の振幅強度の時系列波形に基づく画像処理、及び所定のフーリエ変換等の演算処理も含む。 The control /
The predetermined analysis includes image processing based on a time-series waveform of the amplitude intensity of the pulse
また、制御・解析装置8は、物性情報取得手段を有する。物性情報取得手段は、前記半導体ウェハ5に帰属する時系列波形と、予め参照データとして準備した前記半導体ウェハ5を構成する各単層構造体に帰属する時系列波形を比較することで、前記半導体ウェハ5の各層の電子物性情報又は各層間界面の電子物性情報を取得する手段である。
Also, the control / analysis device 8 has physical property information acquisition means. The physical property information acquisition means compares the time series waveform attributed to the semiconductor wafer 5 with the time series waveform attributed to each single layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. This is means for acquiring electronic physical property information of each layer of the wafer 5 or electronic physical property information of each interlayer interface.
すなわち、制御・解析装置8は、半導体ウェハ5に帰属する時系列波形と、半導体ウェハ5の各単層構造体に帰属する時系列波形を比較することで、前記半導体ウェハ5の各層の電子物性情報又は各層間界面の電子物性情報として、例えば、キャリア寿命、電子移動度、層間電界分布、及び結晶方向に関する情報を含む信号を得る手段である。また、制御・解析装置8は、当該電子物性情報に基づいて半導体ウェハ5の良否を判定する手段である。
That is, the control / analysis device 8 compares the time-series waveform attributed to the semiconductor wafer 5 with the time-series waveform attributed to each single-layer structure of the semiconductor wafer 5, whereby the electronic physical properties of each layer of the semiconductor wafer 5 are compared. For example, the information or the electronic physical property information of each interlayer interface is a means for obtaining a signal including information on carrier lifetime, electron mobility, interlayer electric field distribution, and crystal direction. The control / analysis device 8 is a means for determining the quality of the semiconductor wafer 5 based on the electronic property information.
制御・解析装置8は、前記半導体ウェハ5の時系列波形の周波数成分と、予め参照データとして準備した前記半導体ウェハ5を構成する各単層構造体の時系列波形の周波数成分を算出する算出手段をさらに有する。これにより、前記物性情報取得手段は、前記半導体ウェハ5による時系列波形の周波数成分と、前記参照データとして取得した前記半導体ウェハ5を構成する各単層構造体による時系列波形の周波数成分と比較することで、前記半導体ウェハ5の各層の電子物性情報又は各層間界面の電子物性情報を取得することができる。すなわち、制御・解析装置8は、前記半導体ウェハ5による時系列波形をフーリエ変換して半導体ウェハ5に帰属する周波数成分を算出し、かつ予め参照データとして準備した半導体ウェハ5を構成する単層構造体による時系列波形をフーリエ変換して周波数成分を算出し、各周波数成分を比較することができる。
The control / analysis device 8 calculates a frequency component of the time series waveform of the semiconductor wafer 5 and a frequency component of the time series waveform of each single-layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. It has further. Thereby, the physical property information acquisition means compares the frequency component of the time series waveform by the semiconductor wafer 5 with the frequency component of the time series waveform by each single layer structure constituting the semiconductor wafer 5 acquired as the reference data. By doing so, the electronic property information of each layer of the semiconductor wafer 5 or the electronic property information of each interlayer interface can be acquired. That is, the control / analysis apparatus 8 calculates a frequency component belonging to the semiconductor wafer 5 by performing Fourier transform on the time-series waveform of the semiconductor wafer 5 and constitutes a single-layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. It is possible to calculate a frequency component by performing Fourier transform on a time-series waveform by the body and compare each frequency component.
制御・解析装置8は、前記パルスレーザー光9の偏光方向を任意の角度に回転させる機構をさらに有する。前記半導体ウェハ5に前記パルスレーザー光9を照射し、かつ前記機構により任意の2つの角度に設定した時に得られる前記半導体ウェハ5による2つの前記時系列波形を比較することで、前記半導体ウェハ5の各層の結晶方向に関する情報を取得することができる。
The control / analysis device 8 further includes a mechanism for rotating the polarization direction of the pulsed laser light 9 to an arbitrary angle. By comparing the two time series waveforms of the semiconductor wafer 5 obtained when the semiconductor wafer 5 is irradiated with the pulsed laser light 9 and set at any two angles by the mechanism, the semiconductor wafer 5 is compared. It is possible to obtain information on the crystal orientation of each layer.
制御・解析装置8は、前記パルスレーザー光9の中心波長を変化させる波長変化手段をさらに有する。前記波長変化手段により少なくとも2つの波長になるように設定された前記パルスレーザー光9を前記半導体ウェハ5に照射し、当該パルスレーザー光照射位置から得られる前記積層構造体による2つの時系列波形を比較することで、前記半導体ウェハ5の各層の深さ方向に関する情報を取得することができる。例えば、Si系材料からなる半導体ウェハの場合は、1μm(1000nm)より長波長側及び1μmより短波長側になるように中心波長に変化させるとよい。
The control / analysis device 8 further includes wavelength changing means for changing the center wavelength of the pulse laser beam 9. The pulsed laser light 9 set to have at least two wavelengths by the wavelength changing means is irradiated onto the semiconductor wafer 5, and two time-series waveforms by the laminated structure obtained from the pulsed laser light irradiation position are obtained. By comparing, information regarding the depth direction of each layer of the semiconductor wafer 5 can be acquired. For example, in the case of a semiconductor wafer made of a Si-based material, the center wavelength may be changed so that the wavelength is longer than 1 μm (1000 nm) and shorter than 1 μm.
そして、制御・解析装置8は、パルスレーザー光源2により、前記半導体ウェハ5にパルスレーザー光9を照射させる。このパルスレーザー光9の照射によって生じるパルス電磁波10が検出・変換装置4によって検出され、制御・解析装置8では、その検出結果を取り込んで、パルス電磁波10の振幅強度が検出される。
The control / analysis device 8 causes the pulsed laser light source 2 to irradiate the semiconductor wafer 5 with pulsed laser light 9. The pulse electromagnetic wave 10 generated by the irradiation of the pulsed laser light 9 is detected by the detection / conversion device 4, and the control / analysis device 8 takes in the detection result and detects the amplitude intensity of the pulse electromagnetic wave 10.
そして、制御・解析装置8は、半導体ウェハ5についてのパルス電磁波10の検出を継続しつつ、前記走査台7を制御して、半導体ウェハ5を移動させながらパルスレーザー光9の照射を行う。このように、半導体非破壊検査装置1においては、前記パルスレーザー光9を2次元的に走査して照射する手段(走査台7、パルスレーザー光源2)を備え、前記パルスレーザー光9を2次元的に走査して照射する手段(走査台7、パルスレーザー光源2)によって、前記パルスレーザー光9を連続的に前記半導体ウェハ5に対して照射し、前記照射によって発生されるパルス電磁波10の振幅強度を、連続して、計測することが可能である。
なお、本実施例における半導体非破壊検査装置1は、前記パルスレーザー光9を2次元的に走査して照射する手段(走査台7、パルスレーザー光源2)を備えているが、計測を行う際に必ず走査を行う必要はなく、計測環境に応じて走査の要不要を判断し適宜使用すればよい。 Then, the control /analysis apparatus 8 controls the scanning table 7 while continuing to detect the pulse electromagnetic wave 10 on the semiconductor wafer 5 and irradiates the pulse laser beam 9 while moving the semiconductor wafer 5. As described above, the semiconductor nondestructive inspection apparatus 1 includes means (scanning table 7, pulse laser light source 2) for two-dimensionally scanning and irradiating the pulsed laser light 9, and the pulsed laser light 9 is two-dimensionally provided. The pulse laser beam 9 is continuously irradiated onto the semiconductor wafer 5 by means of scanning and irradiating means (scanning table 7, pulse laser light source 2), and the amplitude of the pulse electromagnetic wave 10 generated by the irradiation. The intensity can be measured continuously.
The semiconductornondestructive inspection apparatus 1 in this embodiment includes means (scanning table 7, pulsed laser light source 2) for two-dimensionally scanning and irradiating the pulsed laser light 9 when performing measurement. It is not always necessary to perform scanning, and the necessity of scanning may be determined according to the measurement environment and used as appropriate.
なお、本実施例における半導体非破壊検査装置1は、前記パルスレーザー光9を2次元的に走査して照射する手段(走査台7、パルスレーザー光源2)を備えているが、計測を行う際に必ず走査を行う必要はなく、計測環境に応じて走査の要不要を判断し適宜使用すればよい。 Then, the control /
The semiconductor
そして、制御・解析装置8は、前記パルス電磁波10の振幅強度の時間波形に対応した時間的に変化する電圧信号(時系列波形)を取得し、当該時系列波形を解析して前記半導体ウェハ5中の各層の電子物性情報や各層間界面の電子物性情報を取得する手段として機能するものであり、当該時系列波形を解析することで、電子物性情報として、例えば、キャリア寿命、移動度、層間電界分布、結晶方向に関する情報を含む信号が得られる。
以上の装置構成及び原理によって、検査対象である半導体ウェハ5の検査が行われる。 Then, the control /analysis device 8 acquires a time-varying voltage signal (time series waveform) corresponding to the time waveform of the amplitude intensity of the pulse electromagnetic wave 10, analyzes the time series waveform, and analyzes the semiconductor wafer 5. It functions as a means to acquire the electronic physical property information of each layer and the electronic physical property information of each interlayer interface, and by analyzing the time series waveform, as the electronic physical property information, for example, carrier lifetime, mobility, interlayer A signal including information on the electric field distribution and crystal orientation is obtained.
Thesemiconductor wafer 5 that is the inspection target is inspected by the above apparatus configuration and principle.
以上の装置構成及び原理によって、検査対象である半導体ウェハ5の検査が行われる。 Then, the control /
The
次に、以上のように構成された半導体非破壊検査装置1を用いて、半導体非破壊検査方法を説明する。
Next, a semiconductor nondestructive inspection method will be described using the semiconductor nondestructive inspection apparatus 1 configured as described above.
本実施形態に係る半導体非破壊検査方法は、半導体ウェハ5に対して所定の波長を有するパルスレーザー光9を照射し、当該パルスレーザー光9照射位置から放射されるパルス電磁波10により前記半導体ウェハ5を非破壊で検査する半導体非破壊検査方法であって、図6に示すフローに従って進行するものであり、レーザー光分割工程S10と、入射工程S20と、プローブ光照射工程S30と、時系列波形生成工程S40と、物性情報取得工程S50と、を有する。以下、各工程について、具体的に説明する。
In the semiconductor nondestructive inspection method according to the present embodiment, the semiconductor wafer 5 is irradiated with a pulsed laser beam 9 having a predetermined wavelength, and the pulsed electromagnetic wave 10 emitted from the irradiation position of the pulsed laser beam 9. Is a nondestructive semiconductor nondestructive inspection method that proceeds in accordance with the flow shown in FIG. 6 and includes a laser beam splitting step S10, an incident step S20, a probe light irradiation step S30, and time-series waveform generation. It has process S40 and physical property information acquisition process S50. Hereinafter, each step will be specifically described.
検査対象である半導体ウェハ5を非破壊検査する際に、先ず、図1に示すごとく、半導体ウェハ5を走査台7上の規定の位置にセットした後、前記制御・解析装置8の制御によって、パルスレーザー光9の照射位置と、半導体ウェハ5の所定位置(スタート位置)が一致するように制御し、走査台7上において、半導体ウェハ5を2次元に走査するために移動する(走査工程)。そうして、パルスレーザー光源2からパルスレーザー光9が照射される。
When non-destructive inspection of the semiconductor wafer 5 to be inspected, first, as shown in FIG. 1, after setting the semiconductor wafer 5 at a specified position on the scanning table 7, by the control of the control / analysis device 8, Control is performed so that the irradiation position of the pulse laser beam 9 and a predetermined position (start position) of the semiconductor wafer 5 coincide with each other, and the semiconductor wafer 5 is moved on the scanning table 7 to scan in two dimensions (scanning process). . Then, the pulse laser light 9 is irradiated from the pulse laser light source 2.
レーザー光分割工程S10は、前記パルスレーザー光9をプローブ光L1とポンプ光L2とに2分割する工程である。
Laser beam splitting step S10 is a step of splitting the pulse laser beam 9 into probe light L1 and pump light L2.
すなわち、レーザー光分割工程S10では、図1において、パルスレーザー光源2から出力されたパルスレーザー光9を、ビームスプリッタ14(本実施形態においては、ハーフミラー)によって二つのパルスレーザー光9であるプローブ光L1とポンプ光L2に分割する。
That is, in the laser beam splitting step S10, the pulse laser beam 9 output from the pulse laser beam source 2 in FIG. 1 is converted into two pulse laser beams 9 by a beam splitter 14 (a half mirror in this embodiment). The light is divided into light L1 and pump light L2.
入射工程S20は、前記ポンプ光L2を前記半導体ウェハ5に照射し、前記半導体ウェハ5から放射されるパルス電磁波10を集光して、ひとつの前記検出手段である検出素子19に入射させる工程である。
The incident step S20 is a step of irradiating the semiconductor wafer 5 with the pump light L2, condensing the pulse electromagnetic wave 10 radiated from the semiconductor wafer 5, and causing the pulsed electromagnetic wave 10 to enter the detection element 19 which is one of the detection means. is there.
すなわち、入射工程S20では、ビームスプリッタ14により分けられたパルスレーザー光9の一方であるポンプ光L2を鏡29、光チョッパー16及び鏡30を通過させて、当該光チョッパー16を通過したポンプ光L2は前記半導体ウェハ5に照射される。そうして、ポンプ光L2照射位置から放射されるパルス電磁波10をポンプ光集光手段18である軸外し放物面鏡により、検出素子19の一端へ集光し、検出素子19によりポンプ光L2の照射により発生したパルス電磁波10の振幅強度が検出される。
That is, in the incident step S <b> 20, the pump light L <b> 2 that is one of the pulsed laser beams 9 divided by the beam splitter 14 is allowed to pass through the mirror 29, the optical chopper 16, and the mirror 30, and the pump light L <b> 2 that has passed through the optical chopper 16. Is irradiated onto the semiconductor wafer 5. Then, the pulse electromagnetic wave 10 radiated from the irradiation position of the pump light L2 is condensed to one end of the detection element 19 by the off-axis parabolic mirror which is the pump light condensing means 18, and the pump light L2 is collected by the detection element 19 The amplitude intensity of the pulse electromagnetic wave 10 generated by the irradiation is detected.
プローブ光照射工程S30は、前記プローブ光L1を、前記時間遅延手段15を通過させ、前記ポンプ光L2により発生した前記パルス電磁波10の入射と同期させて前記検出素子19に照射する工程である。すなわち、プローブ光照射工程S30は、前記プローブ光L1を、所定の周期にて時間遅延させながら、前記ポンプ光L2により放射された前記パルス電磁波10の入射と同期させて前記検出素子19に照射する工程である。
Probe light irradiation step S30 is a step of irradiating the detection element 19 with the probe light L1 passing through the time delay means 15 and synchronizing with the incidence of the pulsed electromagnetic wave 10 generated by the pump light L2. That is, the probe light irradiation step S30 irradiates the detection element 19 with the probe light L1 in synchronization with the incidence of the pulsed electromagnetic wave 10 emitted by the pump light L2 while being delayed for a predetermined period. It is a process.
具体的には、プローブ光照射工程S30では、分割された一方のパルスレーザー光であるプローブ光L1が時間遅延手段15、鏡31、鏡34、及びレンズ35を介して検出素子19の他端に照射される。この際、プローブ光L1は前記半導体ウェハ5から発生するパルス電磁波10が前記検出素子19に入射するのに同期して照射される。
Specifically, in the probe light irradiation step S <b> 30, the divided probe light L <b> 1 that is pulsed laser light passes through the time delay means 15, the mirror 31, the mirror 34, and the lens 35 to the other end of the detection element 19. Irradiated. At this time, the probe light L <b> 1 is irradiated in synchronization with the pulse electromagnetic wave 10 generated from the semiconductor wafer 5 entering the detection element 19.
時系列波形生成工程S40は、前記プローブ光L1の照射時に前記検出素子19に入射した前記ポンプ光L2によるパルス電磁波10の振幅強度を検出することで、前記半導体ウェハ5における遅延時間の異なる複数の前記パルス電磁波10の振幅強度を取得して、前記半導体ウェハ5におけるパルス電磁波10の時系列波形を生成する工程である。すなわち、時系列波形生成工程S40は、前記プローブ光L1と同期した遅延時間の異なる複数の前記パルス電磁波10の振幅強度を取得して、半導体ウェハ5におけるパルス電磁波10の時系列波形を生成する工程である。
The time-series waveform generation step S40 detects a plurality of different delay times in the semiconductor wafer 5 by detecting the amplitude intensity of the pulse electromagnetic wave 10 by the pump light L2 incident on the detection element 19 at the time of irradiation of the probe light L1. In this step, the amplitude intensity of the pulse electromagnetic wave 10 is acquired and a time-series waveform of the pulse electromagnetic wave 10 in the semiconductor wafer 5 is generated. That is, the time-series waveform generation step S40 acquires the amplitude intensities of the plurality of pulse electromagnetic waves 10 having different delay times synchronized with the probe light L1, and generates a time-series waveform of the pulse electromagnetic waves 10 in the semiconductor wafer 5. It is.
具体的には、時系列波形生成工程S40では、ビームスプリッタ14により分けられたプローブ光L1が検出素子19に至る光路の途中にて時間遅延手段15を通過した際に、当該時間遅延手段15内においては、所定方向(本実施例ではプローブ光L1と平行方向)に可動自在に配置された可動鏡15aによりプローブ光L1が入射及び反射される。また、制御・解析装置8が当該可動鏡15aを所定方向に所定の周波数にて周期的に往復可動させることでプローブ光L1が検出素子19に到達する時間を光学的に時間遅延する。こうして、制御・解析装置8は、時間遅延手段15によりプローブ光L1が検出素子19へ到達する時間を周期的に変化させながら、検出素子19にプローブ光L1が入射する時間を遅延することで、プローブ光L1入射時のパルス電磁波10の振幅強度を所定の時系列で取得することが可能となる(図7(a)参照)。
Specifically, in the time-series waveform generation step S40, when the probe light L1 divided by the beam splitter 14 passes through the time delay unit 15 in the middle of the optical path to the detection element 19, the time delay unit 15 In FIG. 2, the probe light L1 is incident and reflected by the movable mirror 15a that is movably arranged in a predetermined direction (in the present embodiment, parallel to the probe light L1). Further, the control / analysis device 8 periodically reciprocates the movable mirror 15a in a predetermined direction at a predetermined frequency, thereby optically delaying the time for the probe light L1 to reach the detection element 19. Thus, the control / analysis device 8 delays the time when the probe light L1 is incident on the detection element 19 while periodically changing the time when the probe light L1 reaches the detection element 19 by the time delay means 15. The amplitude intensity of the pulse electromagnetic wave 10 when the probe light L1 is incident can be acquired in a predetermined time series (see FIG. 7A).
また、制御・解析装置8では、検出されるパルス電磁波10の振幅強度に基づいて振幅強度の時系列波形の生成が行われるが、その工程としては、まず、検出素子19に半導体ウェハ5におけるポンプ光L2照射位置から発生したパルス電磁波10が検出素子19に集光され、当該パルス電磁波10の入射と同期させて、プローブ光L1を検出素子19の所定位置に照射すると、当該プローブ光L1の照射時に入射したパルス電磁波10の電界強度(振幅強度)に比例した電流が発生する。当該電流は、電流アンプ27により電圧に変換後、ロックインアンプ28にて、光チョッパー16のチョッピングと同期してロックイン検出が行われる。そして、当該ロックイン検出の値は制御・解析装置(コンピュータ)8に入力される。つまり、プローブ光L1が検出素子19に照射した時に入射したパルス電磁波10の振幅強度を検出することが可能である。
The control / analyzer 8 generates a time-series waveform of amplitude intensity based on the amplitude intensity of the detected pulsed electromagnetic wave 10. As a process thereof, first, the detection element 19 is pumped by the semiconductor wafer 5. When the pulse electromagnetic wave 10 generated from the irradiation position of the light L2 is condensed on the detection element 19, and the probe light L1 is irradiated to a predetermined position of the detection element 19 in synchronization with the incidence of the pulse electromagnetic wave 10, the irradiation of the probe light L1 is performed. A current proportional to the electric field strength (amplitude strength) of the incident pulsed electromagnetic wave 10 is sometimes generated. The current is converted into a voltage by the current amplifier 27, and then lock-in detection is performed by the lock-in amplifier 28 in synchronization with the chopping of the optical chopper 16. The lock-in detection value is input to a control / analysis device (computer) 8. That is, it is possible to detect the amplitude intensity of the pulse electromagnetic wave 10 that is incident when the probe light L1 is applied to the detection element 19.
前記検出素子19に入射するパルス電磁波10の波形が図7(b)に示すようなものであった場合、プローブ光L1が検出素子19へ到達するまでの時間である時間遅延Δτを、時間遅延手段15の可動鏡15aを周期的に移動させて変更し、遅延時間の異なる複数のプローブ光L1を検出素子19に入射させる。すなわち、図7(a)に示すように、プローブ光L1の入射する時間を遅延させ、各時間遅延(Δτ=t1、t2、t3、t4、t5、t6)におけるパルス電磁波10の振幅強度を取得する。その結果、図7(b)の複数の○印で示すような離散信号列が得られる。図7(b)の横軸は、時間遅延Δτを示す。この遅延時間の異なる複数のプローブ光L1に応じてパルス電磁波10を検出することで、パルス電磁波10の各時系列波形を取得することができる。
When the waveform of the pulse electromagnetic wave 10 incident on the detection element 19 is as shown in FIG. 7B, the time delay Δτ, which is the time until the probe light L1 reaches the detection element 19, is set as the time delay. The movable mirror 15a of the means 15 is moved and changed periodically, and a plurality of probe lights L1 having different delay times are made incident on the detection element 19. That is, as shown in FIG. 7A, the incident time of the probe light L1 is delayed, and the amplitude intensity of the pulse electromagnetic wave 10 at each time delay (Δτ = t1, t2, t3, t4, t5, t6) is acquired. To do. As a result, a discrete signal sequence as shown by a plurality of circles in FIG. 7B is obtained. The horizontal axis of FIG.7 (b) shows time delay (DELTA) (tau). By detecting the pulse electromagnetic wave 10 according to the plurality of probe lights L1 having different delay times, each time-series waveform of the pulse electromagnetic wave 10 can be acquired.
物性情報取得工程S50は、前記半導体ウェハ5に帰属する時系列波形と、予め参照データとして準備した前記半導体ウェハ5を構成する各単層構造体に帰属する時系列波形を比較することで、前記半導体ウェハ5の各層の電子物性情報又は各層間界面の電子物性情報を取得する工程である。
The physical property information acquisition step S50 compares the time series waveform belonging to the semiconductor wafer 5 with the time series waveform belonging to each single-layer structure constituting the semiconductor wafer 5 prepared in advance as reference data. This is a step of obtaining electronic physical property information of each layer of the semiconductor wafer 5 or electronic physical property information of each interlayer interface.
すなわち、物性情報取得工程S50では、制御・解析装置8が半導体ウェハ5に帰属する時系列波形と、半導体ウェハ5の各単層構造体に帰属する時系列波形を比較することで、前記半導体ウェハ5の各層の電子物性情報又は各層間界面の電子物性情報として、例えば、キャリア寿命、電子移動度、層間電界分布、及び結晶方向に関する情報を含む信号を得る工程である。以下に、半導体非破壊検査装置1を用いて所定の半導体ウェハを検査した結果を示す。
That is, in the physical property information acquisition step S50, the control / analysis apparatus 8 compares the time series waveform belonging to the semiconductor wafer 5 with the time series waveform belonging to each single-layer structure of the semiconductor wafer 5, whereby the semiconductor wafer 5 is a step of obtaining a signal including information relating to, for example, carrier lifetime, electron mobility, interlayer electric field distribution, and crystal direction, as the electronic property information of each layer or the electronic property information of each interlayer interface. The results of inspecting a predetermined semiconductor wafer using the semiconductor nondestructive inspection apparatus 1 are shown below.
[半導体ウェハの検査結果]
図8に示すように、SiGe層のGe濃度の異なるもの(Ge組成:3%、7%、9%、0%)を検査対象の半導体ウェハとして作製した。またGe組成が0%である試料(試料名K-6-91、図9、図10ではHomoepiと記載している試料)は、SiGe層が形成されていないSi層とp-Si基板とからなるものである。これら各試料を上述した半導体非破壊検査装置1により検査した結果が図9及び図10である。
なお、上記SiGe層が形成されていないSi層とp-Si基板とからなる試料は、p-Si基板上に1層のSi層のみ形成された1層構造体であり、本明細書ではこれを単層構造体と呼ぶ。 [Inspection result of semiconductor wafer]
As shown in FIG. 8, SiGe layers having different Ge concentrations (Ge composition: 3%, 7%, 9%, 0%) were produced as semiconductor wafers to be inspected. Further, a sample having a Ge composition of 0% (sample name K-6-91, a sample described as Homoepi in FIGS. 9 and 10) is composed of a Si layer in which no SiGe layer is formed and a p-Si substrate. It will be. 9 and 10 show the results of inspecting these samples by the semiconductornondestructive inspection apparatus 1 described above.
The sample composed of the Si layer on which the SiGe layer is not formed and the p-Si substrate is a one-layer structure in which only one Si layer is formed on the p-Si substrate. Is called a single-layer structure.
図8に示すように、SiGe層のGe濃度の異なるもの(Ge組成:3%、7%、9%、0%)を検査対象の半導体ウェハとして作製した。またGe組成が0%である試料(試料名K-6-91、図9、図10ではHomoepiと記載している試料)は、SiGe層が形成されていないSi層とp-Si基板とからなるものである。これら各試料を上述した半導体非破壊検査装置1により検査した結果が図9及び図10である。
なお、上記SiGe層が形成されていないSi層とp-Si基板とからなる試料は、p-Si基板上に1層のSi層のみ形成された1層構造体であり、本明細書ではこれを単層構造体と呼ぶ。 [Inspection result of semiconductor wafer]
As shown in FIG. 8, SiGe layers having different Ge concentrations (Ge composition: 3%, 7%, 9%, 0%) were produced as semiconductor wafers to be inspected. Further, a sample having a Ge composition of 0% (sample name K-6-91, a sample described as Homoepi in FIGS. 9 and 10) is composed of a Si layer in which no SiGe layer is formed and a p-Si substrate. It will be. 9 and 10 show the results of inspecting these samples by the semiconductor
The sample composed of the Si layer on which the SiGe layer is not formed and the p-Si substrate is a one-layer structure in which only one Si layer is formed on the p-Si substrate. Is called a single-layer structure.
図9は、SiGe層のGe組成の異なる試料の時系列波形を比較したものであり、横軸が時間(ps)で縦軸が振幅強度(mV)である。図9において、上から順にGe組成9%、7%、3%、SiGe層なし(図9中のHomoepi)の時系列波形を並べている。まず、Geの含有の有無によって時系列波形が大きく異なることがわかる。すなわち、SiGe層を有する試料(Ge組成:9%、7%、3%)と、SiGe層を有しないSi層のみからなる試料を有するものとでは時系列波形が大きく異なっている。そして、Ge組成の違いによっても波形パターンが異なることが確認できる。
FIG. 9 is a comparison of time series waveforms of samples having different Ge compositions of the SiGe layer, with the horizontal axis representing time (ps) and the vertical axis representing amplitude intensity (mV). In FIG. 9, time-series waveforms of Ge composition 9%, 7%, 3% and no SiGe layer (Homoepi in FIG. 9) are arranged in order from the top. First, it can be seen that the time-series waveform varies greatly depending on the presence or absence of Ge. That is, the time-series waveform is greatly different between a sample having a SiGe layer (Ge composition: 9%, 7%, 3%) and a sample having only a Si layer having no SiGe layer. And it can confirm that a waveform pattern changes also with the difference in Ge composition.
図10は、図9の各試料の時系列波形に基づいて周波数成分を算出し、各試料の周波数成分を規格化して比較したものであり、横軸が周波数(THz)で縦軸が規格化した振幅強度である。この場合も、それぞれの時系列波形が異なっていることが確認できる。
FIG. 10 shows the frequency components calculated based on the time-series waveform of each sample in FIG. 9, and the frequency components of each sample are normalized and compared. The horizontal axis is frequency (THz) and the vertical axis is normalized. Amplitude intensity. Also in this case, it can be confirmed that each time-series waveform is different.
図11は、SiGe層のGe組成が7%の試料について、2次元で振幅強度を画像表示した、半導体ウェハ中央部近傍の画像データと半導体ウェハ端部付近の画像データである。半導体ウェハ中央部近傍では、パルス電磁波の振幅強度が均一である。それに対して、半導体ウェハ端部付近のパルス電磁波の振幅強度(THz放射強度)の不均一分布が観測できた。
FIG. 11 shows image data near the center of the semiconductor wafer and image data near the edge of the semiconductor wafer, in which the amplitude intensity is image-displayed two-dimensionally for a sample having a Ge composition of 7% in the SiGe layer. In the vicinity of the central portion of the semiconductor wafer, the amplitude intensity of the pulse electromagnetic wave is uniform. In contrast, a non-uniform distribution of the amplitude intensity (THz radiation intensity) of the pulse electromagnetic wave near the edge of the semiconductor wafer was observed.
図12は、半導体ウェハ端部付近のパルス電磁波の振幅強度(THz放射強度)をさらに詳しく検証した結果である。図12(a)の下側の図は図11で示した半導体ウェハ中央部近傍における振幅強度の2次元画像データである。図12(a)の上側の図は半導体ウェハ端部付近の上部横において、その断面の振幅強度(mV)を示したものである。図12(b)はラマン測定によりSiGe層の歪測定を行った結果である。図12(b)のラマン測定ではSiGe層の横方向の各位置における歪はほぼ均一であるのに対し、これに対応する図12(a)上側の図で示すSiGe層の横方向の各位置における振幅強度では、横方向の各位置により振幅強度が大きく異なっている(右側に大きな振幅強度のピークが存在する)。これより、本発明の半導体非破壊検査装置1を用いれば、ラマンによる歪測定とは異なるSiGe物性を計測することができる。また、図12(a)下側の図で示す振幅強度の2次元画像データの白線で囲む部分は、SiGe層が剥離した部分であり、振幅強度の差としてはっきりと確認できた。
FIG. 12 shows the results of further detailed verification of the amplitude intensity (THz radiation intensity) of the pulse electromagnetic wave near the edge of the semiconductor wafer. The lower part of FIG. 12A shows two-dimensional image data of the amplitude intensity in the vicinity of the central portion of the semiconductor wafer shown in FIG. The upper diagram in FIG. 12A shows the amplitude intensity (mV) of the cross section of the upper side near the edge of the semiconductor wafer. FIG. 12B shows the result of strain measurement of the SiGe layer by Raman measurement. In the Raman measurement of FIG. 12B, the strain at each position in the lateral direction of the SiGe layer is substantially uniform, whereas each position in the lateral direction of the SiGe layer shown in the upper diagram of FIG. In the amplitude intensity at, the amplitude intensity differs greatly depending on the position in the horizontal direction (a large amplitude intensity peak exists on the right side). From this, if the semiconductor nondestructive inspection apparatus 1 of this invention is used, the SiGe physical property different from the distortion measurement by Raman can be measured. Further, the portion surrounded by the white line of the two-dimensional image data of the amplitude intensity shown in the lower diagram of FIG. 12A is a portion where the SiGe layer is peeled off, and can be clearly confirmed as a difference in amplitude intensity.
以上により、本発明によれば、半導体ウェハや半導体デバイス等の半導体層を含む積層構造体において、非破壊非接触で当該積層構造体の各層の電子物性情報や各層間界面の電子物性情報を含む信号を取得することができる。
As described above, according to the present invention, in a laminated structure including a semiconductor layer such as a semiconductor wafer or a semiconductor device, the electronic physical property information of each layer of the laminated structure or the electronic physical property information of each interlayer interface is included in a nondestructive and non-contact manner. A signal can be acquired.
本発明は、例えば、半導体ウェハ検査装置、LSI検査装置などの半導体検査分野、固体材料検査装置、有機材料検査装置などの材料検査評価分野、及び物性物理研究分野において利用可能である。
The present invention can be used in, for example, semiconductor inspection fields such as semiconductor wafer inspection devices and LSI inspection devices, material inspection evaluation fields such as solid material inspection devices and organic material inspection devices, and physical property physics research fields.
1 半導体非破壊検査装置
4 検出・変換装置
5 半導体ウェハ
8 制御・解析装置
9 パルスレーザー光
10 パルス電磁波
14 ビームスプリッタ
15 時間遅延手段
19 検出素子
27 電流アンプ
28 ロックインアンプ DESCRIPTION OFSYMBOLS 1 Semiconductor nondestructive inspection apparatus 4 Detection / conversion apparatus 5 Semiconductor wafer 8 Control / analysis apparatus 9 Pulse laser beam 10 Pulse electromagnetic wave 14 Beam splitter 15 Time delay means 19 Detection element 27 Current amplifier 28 Lock-in amplifier
4 検出・変換装置
5 半導体ウェハ
8 制御・解析装置
9 パルスレーザー光
10 パルス電磁波
14 ビームスプリッタ
15 時間遅延手段
19 検出素子
27 電流アンプ
28 ロックインアンプ DESCRIPTION OF
Claims (6)
- 半導体層を含む積層構造体に対して所定の波長を有するパルスレーザー光を照射し、当該パルスレーザー光照射位置から放射される電磁波により前記積層構造体を非破壊で検査する半導体非破壊検査装置であって、
前記パルスレーザー光をプローブ光とポンプ光とに2分割するレーザー光分割手段と、
前記積層構造体に前記ポンプ光を照射することで、当該ポンプ光照射位置から前記電磁波を放射させる手段と、
前記ポンプ光照射位置から放射される前記電磁波が入射され、当該入射された電磁波の振幅強度に応じた電流を発生させる検出素子と、
前記検出素子に接続され、前記検出素子で発生した電流を電圧に変換する電流アンプと、
前記電流アンプに接続され、前記電流アンプで変換された電圧を前記電磁波の振幅強度の時間波形に対応した時間的に変化する電圧信号に変換するロックインアンプと、
前記プローブ光の光路に配置され、前記検出素子に前記電磁波が入射する時間を周期的に遅延可能である時間遅延手段と、
前記時間的に変化する電圧信号と、予め参照データとして準備した前記積層構造体を構成する各単層構造体の時間的に変化する電圧信号を比較することで、前記積層構造体の各層の電子物性情報又は各層間界面の電子物性情報を取得する物性情報取得手段と、
を有することを特徴とする半導体非破壊検査装置。 A semiconductor non-destructive inspection apparatus that irradiates a laminated structure including a semiconductor layer with a pulsed laser beam having a predetermined wavelength and inspects the laminated structure non-destructively by an electromagnetic wave emitted from the pulse laser light irradiation position. There,
Laser beam splitting means for splitting the pulse laser beam into probe light and pump light;
Means for radiating the electromagnetic waves from the pump light irradiation position by irradiating the laminated structure with the pump light;
A detection element that receives the electromagnetic wave emitted from the pump light irradiation position and generates a current corresponding to the amplitude intensity of the incident electromagnetic wave;
A current amplifier connected to the detection element and converting a current generated in the detection element into a voltage;
A lock-in amplifier that is connected to the current amplifier and converts the voltage converted by the current amplifier into a time-varying voltage signal corresponding to the time waveform of the amplitude intensity of the electromagnetic wave;
A time delay means arranged in the optical path of the probe light and capable of periodically delaying the time that the electromagnetic wave is incident on the detection element;
By comparing the time-varying voltage signal with the time-varying voltage signal of each single-layer structure constituting the stacked structure prepared in advance as reference data, the electrons of each layer of the stacked structure are compared. Physical property information acquisition means for acquiring physical property information or electronic physical property information of each interlayer interface;
A semiconductor nondestructive inspection apparatus characterized by comprising: - 前記積層構造体の前記時間的に変化する電圧信号の周波数成分と、予め参照データとして準備した前記積層構造体を構成する各単層構造体の時間的に変化する電圧信号の周波数成分を算出する算出手段をさらに有し、
前記物性情報取得手段は、前記積層構造体の前記時間的に変化する電圧信号の周波数成分と、前記各単層構造体の時間的に変化する電圧信号の周波数成分を比較することで、前記積層構造体の各層の電子物性情報又は各層間界面の電子物性情報を取得することを特徴とする請求項1に記載の半導体非破壊検査装置。 The frequency component of the voltage signal that changes with time of the stacked structure and the frequency component of the voltage signal that changes with time of each single-layer structure that forms the stacked structure prepared in advance as reference data are calculated. A calculation means;
The physical property information acquisition means compares the time-dependent frequency signal frequency component of the multilayer structure with the time-varying voltage signal frequency component of each of the single-layer structures. 2. The semiconductor nondestructive inspection apparatus according to claim 1, wherein electronic physical property information of each layer of the structure or electronic physical property information of each interlayer interface is acquired. - 前記パルスレーザー光の中心波長を変化させる波長変化手段をさらに有することを特徴とする請求項1または請求項2に記載の半導体非破壊検査装置。 3. The semiconductor nondestructive inspection apparatus according to claim 1, further comprising wavelength changing means for changing a center wavelength of the pulse laser beam.
- 前記積層構造体に前記ポンプ光を照射して、2次元的に走査する走査手段をさらに有することを特徴とする請求項1から請求項3の何れか一項に記載の半導体非破壊検査装置。 The semiconductor nondestructive inspection apparatus according to any one of claims 1 to 3, further comprising a scanning unit that irradiates the pump light to the stacked structure and performs two-dimensional scanning.
- 前記パルスレーザー光の偏光方向を任意の角度に回転させる機構をさらに有することを特徴とする請求項1から請求項4の何れか一項に記載の半導体非破壊検査装置。 5. The semiconductor nondestructive inspection apparatus according to claim 1, further comprising a mechanism for rotating a polarization direction of the pulsed laser light to an arbitrary angle.
- 請求項1記載の半導体非破壊検査装置を用いて、半導体層を含む積層構造体に対して所定の波長を有するパルスレーザー光を照射し、当該パルスレーザー光照射位置から放射される電磁波により前記積層構造体を非破壊で検査する半導体非破壊検査方法であって、
前記パルスレーザー光をプローブ光とポンプ光とに2分割する分割工程と、
前記ポンプ光を前記積層構造体に照射し、前記積層構造体から放射される電磁波を集光して、前記検出素子に入射させる入射工程と、
前記プローブ光を、所定の周期にて時間遅延させながら、前記ポンプ光により放射された前記パルス電磁波の入射と同期させて前記検出素子に照射するプローブ光照射工程と、
前記プローブ光の照射時に前記検出素子に入射した前記ポンプ光による前記パルス電磁波の振幅強度を検出することで、前記積層構造体における遅延時間の異なる複数の前記パルス電磁波の振幅強度を取得して、前記積層構造体における前記パルス電磁波の時系列波形を生成する時系列波形生成工程と、
前記積層構造体に帰属する時系列波形と、予め参照データとして準備した前記積層構造体を構成する各単層構造体に帰属する時系列波形を比較することで、前記積層構造体の各層の電子物性情報又は各層間界面の電子物性情報を取得する工程と、を有することを特徴とする半導体非破壊検査方法。 Using the semiconductor nondestructive inspection apparatus according to claim 1, the laminated structure including the semiconductor layer is irradiated with a pulsed laser beam having a predetermined wavelength, and the laminated layer is irradiated with an electromagnetic wave radiated from the pulsed laser beam irradiation position. A semiconductor nondestructive inspection method for nondestructively inspecting a structure,
A splitting step of splitting the pulsed laser light into probe light and pump light;
An incident step of irradiating the laminated structure with the pump light, condensing electromagnetic waves radiated from the laminated structure, and entering the detection element;
A probe light irradiation step of irradiating the detection element in synchronization with the incidence of the pulsed electromagnetic wave emitted by the pump light while delaying the probe light at a predetermined period of time,
By detecting the amplitude intensity of the pulse electromagnetic wave due to the pump light incident on the detection element at the time of irradiation of the probe light, obtaining the amplitude intensity of the plurality of pulse electromagnetic waves having different delay times in the laminated structure, A time-series waveform generating step for generating a time-series waveform of the pulse electromagnetic wave in the laminated structure;
By comparing the time-series waveform belonging to the laminated structure with the time-series waveform belonging to each single-layer structure constituting the laminated structure prepared in advance as reference data, the electrons of each layer of the laminated structure And a step of acquiring physical property information or electronic physical property information of each interlayer interface.
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