WO2013156274A1 - Formulierungen enthaltend ammoniakalische hydroxo-zink-verbindungen - Google Patents
Formulierungen enthaltend ammoniakalische hydroxo-zink-verbindungen Download PDFInfo
- Publication number
- WO2013156274A1 WO2013156274A1 PCT/EP2013/056341 EP2013056341W WO2013156274A1 WO 2013156274 A1 WO2013156274 A1 WO 2013156274A1 EP 2013056341 W EP2013056341 W EP 2013056341W WO 2013156274 A1 WO2013156274 A1 WO 2013156274A1
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- WO
- WIPO (PCT)
- Prior art keywords
- hydroxo
- compound
- zinc
- formulation according
- zno
- Prior art date
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- 239000000203 mixture Substances 0.000 title claims abstract description 53
- 238000009472 formulation Methods 0.000 title claims abstract description 51
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 77
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000011701 zinc Substances 0.000 claims description 21
- 239000002244 precipitate Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 239000003446 ligand Substances 0.000 claims description 7
- 150000002823 nitrates Chemical class 0.000 claims description 7
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 5
- 230000005693 optoelectronics Effects 0.000 claims description 5
- 150000002259 gallium compounds Chemical class 0.000 claims description 4
- 150000002472 indium compounds Chemical class 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000001376 precipitating effect Effects 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 description 38
- -1 acyl radical Chemical class 0.000 description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 125000004432 carbon atom Chemical group C* 0.000 description 14
- 230000037230 mobility Effects 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- 230000005669 field effect Effects 0.000 description 10
- 150000003254 radicals Chemical class 0.000 description 9
- 239000000654 additive Substances 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 238000005119 centrifugation Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000004679 hydroxides Chemical class 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 4
- AWMVMTVKBNGEAK-UHFFFAOYSA-N Styrene oxide Chemical compound C1OC1C1=CC=CC=C1 AWMVMTVKBNGEAK-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 150000005840 aryl radicals Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 239000012047 saturated solution Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical class [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 3
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- ORTFAQDWJHRMNX-UHFFFAOYSA-M oxidooxomethyl Chemical compound [O-][C]=O ORTFAQDWJHRMNX-UHFFFAOYSA-M 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 239000012994 photoredox catalyst Substances 0.000 description 2
- 229920000233 poly(alkylene oxides) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- GVNVAWHJIKLAGL-UHFFFAOYSA-N 2-(cyclohexen-1-yl)cyclohexan-1-one Chemical compound O=C1CCCCC1C1=CCCCC1 GVNVAWHJIKLAGL-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101150065749 Churc1 gene Proteins 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 102100038239 Protein Churchill Human genes 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical group [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000013011 aqueous formulation Substances 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical class N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000006297 carbonyl amino group Chemical group [H]N([*:2])C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 150000001990 dicarboxylic acid derivatives Chemical class 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229920001002 functional polymer Polymers 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002924 oxiranes Chemical class 0.000 description 1
- ZKGFCAMLARKROZ-UHFFFAOYSA-N oxozinc;hydrate Chemical compound O.[Zn]=O ZKGFCAMLARKROZ-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003333 secondary alcohols Chemical class 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical class S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01C—AMMONIA; CYANOGEN; COMPOUNDS THEREOF
- C01C1/00—Ammonia; Compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/02—Oxides; Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Definitions
- the present invention relates to ammoniacal formulations comprising hydroxo-zinc compounds, to processes for producing ZnO-containing layers, which use these formulations, to the ZnO-containing layers obtainable by this process, to the use of the formulations for producing electronic components, and to electronic components containing the ZnO-containing layers produced by the process. Because of its low production costs and its easy scalability, printed electronics is the focus of many current research and development projects, especially in the field of semiconductor technology. There is one
- FETs field effect transistors
- TFTs thin-film field effect transistors
- each transistor An important component in each transistor is the semiconductor material, which has the switching parameters, e.g. the tension, influenced.
- Important parameters for semiconductor materials are the respective field-effect mobilities, processabilities and processing temperatures during production.
- zinc oxide is one of the most attractive inorganic oxide materials for transistor fabrication. Furthermore, because of its highly interesting piezoelectric and electromechanical properties, zinc oxide is also commonly used in semiconductor technology in general (Mater., Eng., B-Solid State Mater., Adv., Technol., 2001, 80, 383; IEEE Trans. Microw. Theory Tech , MT17, 957) and used in electronics and optoelectronics. Due to its band gap of 3.37 eV at room temperature (Klingshirn, Phys. Status Solidi B, 1975, 71, 547) and its high exciton-binding energy of 60 meV (Landolt's
- the Hall mobility ⁇ ⁇ of the electrons in the ZnO single crystal is 400 cm 2 -V "1 -s " 1 , and these values have hitherto been obtained in practical layers were not reached.
- Epitaxially, ie eg ZnO layers deposited or sputtered by means of chemical vapor deposition (CVD) show FET mobilities of 50 to 155 cm 2 -V 1 -s 1.
- the prior art furthermore discloses layers based on mixed oxides containing ZnO
- Hosono Journal of Non-Crystalline Solids, 2006, 352, 851-858 describes gas phase deposition field effect transistors with amorphous oxides of indium, gallium, and zinc, which allow not only pure ZnO layers, but also ZnO-containing layers, ie Layers comprising in addition to ZnO elementary or in combination (especially oxidic) present foreign metals, be suitable for use in field effect transistors.
- Particle-based concepts are based primarily on the use of nanoparticulate systems, such. ZnO nanotubes (Nano Letters, 2005, 5, 12, 2408-2413).
- the disadvantages of the particle concepts are, on the one hand, the colloidal instability of the particle dispersions used, which necessitates the use of dispersing additives, which in turn can adversely affect the resulting charge carrier mobility.
- the particle-particle resistance is a problem because it reduces the mobility of charge carriers and generally increases the sheet resistance.
- Keszler et al., J. Am. Chem. Soc. 2008, 130, 17603-17609 describe good processible ammoniacal solutions of zinc hydroxide compounds in which a Zn-amine-hydroxo complex of the generic formula
- Schmechel et al. Thin Solid films 201 1, 519, 5623-5628, describe the use of zinc oxide hydrate in ammoniacal solution in the synthesis of ZnO-containing layers and at conversion temperatures of 125, 300 and 500 ° C produced field effect transistors. Also their electrical properties
- turn-on voltage is meant the voltage between gate and source at which the transistor turns on, i. begins to conduct the electrical current between the source and drain. This value should be as close as possible to 0V
- the present object is achieved by the novel ammoniacal formulation comprising a) at least one hydroxo-zinc compound, and b) at least one compound of an element of the third main group.
- An ammoniacal formulation comprising at least one hydroxo-zinc compound is an aqueous, ammonia-containing composition in which a hydroxo-zinc compound is dissolved or in which non-hydroxo-zinc compounds form a hydroxo-zinc compound has been.
- Corresponding hydroxo-zinc compounds may be one or more
- the ammoniacal formulation has only a single hydroxo-zinc compound.
- the hydroxo-zinc compound has only a single central ion, which is zinc.
- Corresponding hydroxo-zinc compounds can furthermore attach to amine ligands (NH 3 ligands).
- the hydroxo-zinc compound may have further ligands besides the Zn central ion (s) and the hydroxo and, if appropriate, ammin ligands.
- the hydroxo-zinc compound exclusively hydroxo- and possibly amine ligands.
- the at least one hydroxo-zinc compound can be dissociated in the ammoniacal formulation and optionally present solvated or dispersed. Particularly preferred because they are particularly suitable for the production of homogeneous layers with particularly good electrical properties, are
- Corresponding formulations may be prepared from zinc nitrate solutions via basic precipitation with a hydroxide base such as NaOH and
- the formulation of the invention comprises the at least one hydroxo-zinc compound, preferably in proportions of from 50 to 99.95 mol%, preferably from 85 to 99.95 mol%, particularly preferably from 95 to 99.95 mol%, based on the
- the formulation of the invention further comprises at least one compound of an element of the 3rd main group.
- the formulation comprises at least one compound of an element selected from the group consisting of boron (B), aluminum (AI), gallium (Ga), indium (In) and thallium (Tl).
- B aluminum
- AI aluminum
- Ga gallium
- In indium
- Tl thallium
- the at least one compound of an element of the 3rd main group is a compound of aluminum (AI), gallium (Ga) or indium (In).
- the at least one compound of the element of the 3rd main group can be dissociated in the ammoniacal formulation and optionally present solvated or dispersed.
- the ammoniacal formulation comprises at least two compounds of elements of the 3rd main group. These are more preferably compounds of different elements of the 3rd main group. Very good results are achieved when the formulation comprises at least one gallium compound and at least one indium compound.
- the formulation according to the invention comprises the at least one compound of an element of the 3rd main group, preferably in proportions of from 0.05 to 50 mol%, preferably from 0.05 to 15 mol%, particularly preferably from 0.05 to 5 mol% on the total amount of zinc ions and atoms / ions of the element of the 3rd main group.
- two or more compounds of elements of the 3rd main group are present in the formulation, their respective proportions are preferably 1 to 99 mol%, preferably 5 to 95 mol%, based on the total amount of the compounds of elements of the 3rd main group used.
- ammoniacal formulations which, in addition to the hydroxo-zinc compound, also contain at least one compound of indium and at least one compound of gallium. More preferably, the ratio of the total amounts of the compounds used of
- the formulation is particularly suitable for producing zinc oxide-containing layers having particularly good electrical properties if the hydroxo-zinc compound is present in proportions of 65-75 mol%.
- the gallium compound is present in proportions of 25-34 mol% and the indium compound in proportions of 1-10 mol% based on the total amount of zinc ions and atoms / ions of the element of the 3rd main group.
- Particularly useful compounds of elements of the 3rd main group are the corresponding nitrates, hydroxides, oxides, oxide hydroxides, halides and
- Oxyhalides Very particular preference may be given to using the nitrates, hydroxides, oxides, oxide hydroxides, halides or oxyhalides of aluminum, indium or gallium. Best ZnO-containing layers result when formulations are used which a) by dissolving the nitrate salts of zinc and at least one element of the 3rd main group in trivalent oxidation state, b) precipitating a hydroxide-containing precipitate with a hydroxide base, c) separating the solvent, if necessary c) washing, and d) producing the precipitate in ammoniacal water.
- hydroxide hydroxide preferably used are the bases NaOH and KOH. The separation can preferably be carried out by filtration or centrifugation.
- the concentration of ammonia in the aqueous ammonia formulation which absorbs the precipitate is preferably from 20 to 33 wt .-%, preferably 25 to 30 wt .-%, based on the
- steps c), c ') and d) can be repeated one or more times to achieve particularly good layers.
- the total concentration of zinc ions and element atoms / ions of the 3rd main group to achieve particularly good results 0.05 to 2, preferably 0.1 to 1, particularly preferably 0.1 to 0.5 mol / l.
- the formulation according to the invention is outstandingly suitable for the production of ZnO-containing layers without having to add further additives for this purpose. Nevertheless, the formulations according to the invention are compatible with various additives, such. B. substances that stabilize the same against reagglomeration and sedimentation. In general, this at least one additive, depending on the type, the concentration of hydroxo-zinc compound and the nature of the liquid phase of the dispersion in a proportion of 0.01 to 20 wt .-% based on the in the formulation Hydroxo Zinc compounds are present. As a rule, a low proportion of these substances will be sought, as this can have a positive effect on the performance of the electronic component. Particularly suitable additives are:
- R 1 a straight-chain or branched or cycloaliphatic radical having 8 to 13 carbon atoms
- R 2 hydrogen, an acyl radical, alkyl radical or carboxylic acid radical having in each case 1 to 8 C atoms,
- SO styrene oxide
- EO ethylene oxide
- PO propylene oxide
- n 2 to 18,
- k 2 to 4, H or a linear or branched alkyl radical which may optionally be substituted by additional functional groups, and
- Alkyl alkaryl, alkenyl or sulfopropyl.
- Preferred compounds are, for example, in EP 940 406 A1
- R 1 a straight-chain, branched or cycloaliphatic radical having 1 to 22
- SO styrene oxide
- EO ethylene oxide
- BO butylene oxide
- A is at least one divalent radical selected from the group of
- Z is at least one radical selected from the group of sulfonic acids, sulfuric acids, phosphonic acids, phosphoric acids, carboxylic acids,
- Isocyanates especially phosphoric acid and (meth) acrylic acid
- a, b, c are independently values from 0 to 100, with the proviso that the sum of a + b + c> 0, preferably 5 to 35, especially 10 to 20, with the proviso that the sum of a + b + c + d> 0,
- d 0, preferably 1 to 5
- I, m, n independently of one another are> 2, preferably 2 to 4,
- x, y are independently> 2.
- R 1 are alkyl radicals having 1 to 4 carbon atoms or aryl radicals, but at least
- radicals R 1 are methyl radicals
- R 2 in the molecule are the same or different and may have the following meanings
- R 3 is a hydrogen or alkyl radical
- R 4 is a hydrogen, alkyl or carboxyl radical
- c is a number from 1 to 20,
- d is a number from 0 to 50
- e is a number from 0 to 50
- R 5 is a hydrogen, alkyl, carboxyl or an optionally
- Ether groups containing Dimethylolpropanrest, f is a number from 2 to 20
- R 6 is a hydrogen, alkyl or carboxyl radical
- g is a number from 2 to 6
- h is a number from 0 to 20
- i is a number from 1 to 50
- j is a number from 0 to 10
- k is a number from 0 to 10
- radical R 1 with the proviso that in the average molecule at least one radical R 2 has the meaning (a), where a is a number from 1 to 500, preferably 1 to 200 and especially 1 to 50 and b is a number from 0 to 10, preferably ⁇ 5 and especially 0.
- copolymers based on styrene-based oxyalkylene glycol or polyalkylene oxide alkenyl ethers and unsaturated carboxylic acid derivatives, preferably dicarboxylic acid derivatives can be used, with a) from 1 to 80 mol% of at least one of the structural groups of the formula (8a), (8b ), (8c) and / or (8d)
- (SO), and the alkylene oxide derivatives may be randomly or blockily distributed in the polyether, but preferably the groups are block-like and in the order
- R 2 H, an aliphatic, optionally branched hydrocarbon radical having 1 to 20 C atoms, a cycloaliphatic hydrocarbon having 5 to 8 C atoms, an aryl radical having 6 to 14 C atoms, which is optionally substituted or a Phosphorklar- ( preferably monoester), sulphate or sulphonate derivative. From 1 to 90 mol% of the formula (9)
- R 3 an aliphatic, optionally branched
- Hydrocarbon radical having 1 to 20 carbon atoms, a cycloaliphatic
- Hydrocarbon having 5 to 8 carbon atoms, an aryl radical having 6 to 14 carbon atoms
- T -U 1 -R 4 or -U 1 - (C m H, m O) n - (C m H
- R 4 H, M a , R 3 or -Q 1 -NQ 2 Q 3 ,
- Q 1 is a divalent alkylene radical having 2 to 24 carbon atoms
- Q 2 and Q 3 are aliphatic and / or alicyclic alkyl radicals having 1 to 12 carbon atoms, optionally oxidized to
- T 1 -U 1 - (C m H, m O) n - (C m H
- polyacrylic acids having a weight-average molecular weight M w of preferably 200 to 2,000,000 g / mol, particularly preferably an M w of 1,000 to 50,000 g / mol, and their salts can be used.
- the formulation according to the invention can furthermore not only be used directly with or without the addition of additives for producing ZnO-containing layers, but the formulation can also be embedded in matrix formers, such as e.g. PMMA, polystyrene, PP, PE, PC or PVC can be used for the production of ZnO-containing layers.
- matrix formers such as e.g. PMMA, polystyrene, PP, PE, PC or PVC can be used for the production of ZnO-containing layers.
- the formulation according to the invention is an aqueous formulation.
- one or more other solvents may be present in the formulation in typical amounts for solvents or for additives.
- organic solvents in particular alcohols, ethers and ethoxy alcohols.
- ethers Especially preferred are secondary and tertiary alcohols.
- secondary and tertiary alcohols are particularly well suited as additives for obtaining formulations which are easy to print.
- the invention further provides a process for producing a ZnO-containing layer, in which a formulation of the invention is applied to a substrate and subsequently thermally converted, and the ZnO-containing layers obtainable by this process.
- Corresponding layers are preferably semiconducting. How one skilled in the art can control the formation of semiconducting layers is known.
- the substrate may be an Si or Si / SiO 2 wafer, a glass substrate or a polymer substrate (in particular a polymer film), the latter in particular based on PET, PE, PEN, PEI, PEEK, PI, PC, PEA , PA or PP, act.
- a polymer substrate in particular a polymer film
- the application of the formulation of the invention on the substrate can by dip coating, slot-the coating, spin coating, spraying or various Printing process (flexographic printing, gravure printing, ink-jet printing, screen printing, tampon printing or offset printing).
- the thermal conversion is preferably carried out at temperatures of 120 to 450 ° C, more preferably 125 to 400 ° C. Most preferably, the thermal conversion takes place at temperatures of 125 to 300 ° C.
- the thermal conversion can be done by the use of hot plates, ovens, laser and UV and / or microwave radiation. The big advantage of the present
- Invention is that the choice of a low processing temperature of up to 300 ° C allows the use of polymer substrates, in particular polymer films.
- the ZnO-containing layer produced from the formulation according to the invention can be aftertreated.
- the properties of the produced ZnO-containing layer can be further improved by post-treatment with reducing or oxidizing atmospheres, by moisture, plasma treatment, laser treatment, UV irradiation.
- the formulations according to the invention can preferably be used for the production of electronic components.
- the formulations according to the invention are suitable for the production of transistors - in particular TFTs -, optoelectronic components and sensors.
- TFTs prepared using the formulations of the invention are particularly suitable for use in LCDs or in circuits for RFI D tags.
- the subject matter of the present invention is thus likewise an electronic component, in particular a transistor, an optoelectronic component and a sensor, each of which contains at least one, preferably semiconductive, ZnO-containing layer which has been produced by the methods described above. Examples:
- Inventive Example 1 From nitrate salts of zinc, gallium, and indium in a molar ratio of 66.5: 28.5: 5, 15 ml of a solution of the total concentration 0.5 mol / l are prepared with completely demineralized water. This is followed by precipitation with 10 ml of 2.5 mol / L NaOH. The precipitate is separated by centrifugation (4,500 rpm, 10 minutes) and the liquid phase discarded. The precipitate is dispersed in completely demineralized water, stirred and centrifuged again,
- nitrate salts of zinc and gallium in a molar ratio of 70:30 15 ml of a solution of the total concentration of 0.5 mol / l are used with completely demineralized water. This is followed by precipitation with 10 ml of 2.5 mol / L NaOH. The precipitate is separated by centrifugation (4,500 rpm, 10 minutes) and the liquid phase discarded. The precipitate is dispersed in completely demineralized water, stirred and centrifuged again. Subsequently, the liquid phase is discarded. This step is repeated four more times. Finally, the remaining precipitate is stirred in 28% aqueous ammonia solution for at least 1 h to give a saturated solution.
- Silicon wafers with a 230 nm thick Si0 2 layer and prestructured source and drain contacts made of ITO are coated by spin coating (100 ⁇ , 3,000 rpm, 30 s) with the solutions according to Example 1, 2 or 3. Subsequently, the respective layer is annealed at 160 ° C. Bottom gate and bottom contact TFTS fabricated using the resulting layers have the electrical data listed in Table 1:
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Abstract
Description
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KR1020147028739A KR101993495B1 (ko) | 2012-04-17 | 2013-03-26 | 암모니아성 히드록소-아연 화합물을 포함하는 제제 |
EP13712255.2A EP2839504A1 (de) | 2012-04-17 | 2013-03-26 | Formulierungen enthaltend ammoniakalische hydroxo-zink-verbindungen |
US14/395,339 US9978591B2 (en) | 2012-04-17 | 2013-03-26 | Formulations comprising ammoniacal hydroxozinc compounds |
RU2014145777A RU2640237C2 (ru) | 2012-04-17 | 2013-03-26 | Композиции, содержащие аммиачные гидроксоцинковые соединения |
CN201380020604.6A CN104221133B (zh) | 2012-04-17 | 2013-03-26 | 包含羟‑锌‑化合物的氨配制品 |
JP2015506162A JP6257585B2 (ja) | 2012-04-17 | 2013-03-26 | アンモニア性ヒドロキソ亜鉛化合物を含有する配合物 |
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DE102012206234A DE102012206234A1 (de) | 2012-04-17 | 2012-04-17 | Formulierungen enthaltend ammoniakalische Hydroxo-Zink-Verbindungen |
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GB2528908A (en) * | 2014-08-04 | 2016-02-10 | Isis Innovation | Thin film semiconductor |
CN114695826A (zh) * | 2020-12-31 | 2022-07-01 | Tcl科技集团股份有限公司 | 调控氧化锌的电子迁移率的方法 |
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TW201404724A (zh) | 2014-02-01 |
RU2014145777A (ru) | 2016-06-10 |
JP2015522502A (ja) | 2015-08-06 |
RU2640237C2 (ru) | 2017-12-27 |
DE102012206234A1 (de) | 2013-10-17 |
EP2839504A1 (de) | 2015-02-25 |
JP6257585B2 (ja) | 2018-01-10 |
US9978591B2 (en) | 2018-05-22 |
KR20150010708A (ko) | 2015-01-28 |
CN104221133A (zh) | 2014-12-17 |
US20150076421A1 (en) | 2015-03-19 |
KR101993495B1 (ko) | 2019-06-26 |
CN104221133B (zh) | 2018-03-06 |
TWI629245B (zh) | 2018-07-11 |
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