WO2013146762A1 - Microcrystal metal conductor and method for manufacturing same - Google Patents

Microcrystal metal conductor and method for manufacturing same Download PDF

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Publication number
WO2013146762A1
WO2013146762A1 PCT/JP2013/058737 JP2013058737W WO2013146762A1 WO 2013146762 A1 WO2013146762 A1 WO 2013146762A1 JP 2013058737 W JP2013058737 W JP 2013058737W WO 2013146762 A1 WO2013146762 A1 WO 2013146762A1
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WIPO (PCT)
Prior art keywords
wire
metal conductor
producing
microcrystalline metal
longitudinal direction
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PCT/JP2013/058737
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French (fr)
Japanese (ja)
Inventor
浩之 因
芙美代 案納
松永　大輔
弘基 北原
新二 安藤
雅之 津志田
俊文 小川
Original Assignee
大電株式会社
福岡県
国立大学法人 熊本大学
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Application filed by 大電株式会社, 福岡県, 国立大学法人 熊本大学 filed Critical 大電株式会社
Publication of WO2013146762A1 publication Critical patent/WO2013146762A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • B21C1/003—Drawing materials of special alloys so far as the composition of the alloy requires or permits special drawing methods or sequences
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C23/00—Extruding metal; Impact extrusion
    • B21C23/001—Extruding metal; Impact extrusion to improve the material properties, e.g. lateral extrusion
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys

Definitions

  • the present invention relates to a microcrystalline metal conductor having bending resistance, which is used for cables that are repeatedly bent, for example, in industrial robots, consumer robots, automobile wiring, and the like, and a method for manufacturing the same.
  • Patent Document 1 discloses that 0.1 to 0.4% by mass of iron, 0.1 to 0.3% by mass of copper, 0.02 to 0.2% by mass of magnesium, and 0.02 to 0.02%. It is made of an aluminum alloy containing 2% by mass of silicon and 0.001 to 0.01% by mass of titanium and vanadium. The crystal grain size in the vertical cross section in the wire drawing direction is 5 to 25 ⁇ m, and the strain at room temperature.
  • Patent Document 2 proposes an aluminum alloy containing 0.1 to 0.3% by mass (weight%) of scandium as an aluminum-based conductive material that is lightweight and excellent in tensile strength and conductivity. .
  • the fatigue life of the aluminum alloy wire described in Patent Document 1 is set to 50000 times or more, and in an actual robot or the like, if one operation is 2 seconds, 86400 turns per day. Even if the aluminum alloy wire of Patent Document 1 is used, the robot cannot be operated stably for a long period of time.
  • an aluminum alloy described in Patent Document 2 for example, a wire rod made of an aluminum alloy containing 0.1% by mass of scandium is die-drawn to produce a strand having a wire diameter of 80 ⁇ m.
  • a left and right repeated bend test which is an example of a bending resistance test (for example, with a test piece loaded with a load of 100 g, a bend radius of 15 mm, a bend
  • the angle range is ⁇ 90 degrees
  • the number of cable breaks is in the range of 300,000 to 500,000 times. For this reason, it is difficult to operate the robot stably for a long period of time even if a cable using a strand formed of an aluminum alloy containing 0.1 mass% of scandium is used.
  • the reason why the number of breaks of the cable using the strand formed from the aluminum alloy described in Patent Document 2 is small is that when a strand having a wire diameter of 50 to 80 ⁇ m is formed from a wire rod by die drawing.
  • the average size of the portion along the direction orthogonal to the drawing direction of the crystal grains can be controlled to, for example, 1 ⁇ m or less, but the average size of the portion along the drawing direction of the crystal grains exceeds, for example, 10 ⁇ m. This is because a non-uniform crystal structure (crystal structure composed of fibrous crystals grown in the wire drawing direction) is formed.
  • An object of the present invention is to provide a microcrystalline metal conductor in which bending resistance is improved by improving the bending resistance and a manufacturing method thereof.
  • the microcrystalline metal conductor according to the first invention in accordance with the above object is a microcrystalline metal conductor obtained by subjecting a material subjected to strong processing to a cumulative equivalent strain of 4 or more to a shape imparting process, It has a crystal structure composed of crystal grains having an average grain size in the longitudinal direction of 10 ⁇ m or less and an average grain size in the direction orthogonal to the longitudinal direction of 2 ⁇ m or less.
  • the lower limit value of the average grain size in the longitudinal direction of the crystal grains and the direction orthogonal to the longitudinal direction is about 0.3 ⁇ m.
  • the material is a wire
  • the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 120 ⁇ m, wherein the longitudinal direction is the wire drawing. It is a drawing direction of processing, and a direction orthogonal to the longitudinal direction can be a direction orthogonal to the drawing direction.
  • the method for producing a microcrystalline metal conductor according to the second invention in accordance with the above object performs a strong process in which the cumulative equivalent strain is 4 or more on the material, and further performs a shape imparting process on the material subjected to the strong process.
  • the lower limit value of the average grain size in the longitudinal direction of the crystal grains and the direction orthogonal to the longitudinal direction is about 0.3 ⁇ m.
  • the material is a wire
  • the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 120 ⁇ m, wherein the longitudinal direction is It is a wire drawing direction of the wire drawing process, and a direction orthogonal to the longitudinal direction can be a direction orthogonal to the wire drawing direction.
  • the cross-sectional area reduction rate before and after one processing is 20% or less.
  • the equivalent strain introduced in the one-time processing is 0.5 or more.
  • the strong processing is preferably performed by pushing the wire from one side of the through hole where the mold is bent and discharging the wire from the other side.
  • a gripping means for pressing and holding the side portion of the wire is provided in front of the one side opening of the through hole, and the wire is held by the gripping means. It is preferable to push into the through hole.
  • the wire drawing is performed by a pre-drawing process for reducing the diameter of the wire to form a fine wire, and a finish wire drawing process for forming the strand from the thin wire.
  • the pre-drawing process is preferably performed in a range where the cross-sectional area reduction rate is 5 to 30%, and the finish-drawing process is preferably performed in a range where the workability is 3 to 11.
  • the pre-drawing treatment is preferably performed after preheating the wire that has been subjected to the strong processing.
  • the preheating is performed at a temperature lower by 20 to 100 ° C. than a recrystallization temperature of the wire subjected to the strong processing.
  • the finish drawing is performed after performing fine wire heating in which the fine wire is heated at a temperature 10 to 70 ° C. lower than the recrystallization temperature of the fine wire. It is preferable.
  • the strand is finish-heated at a temperature lower by 10 to 70 ° C. than a recrystallization temperature of the strand.
  • the microcrystalline metal conductor according to the third aspect of the invention that meets the above-mentioned object is a microcrystalline metal conductor obtained by performing a strong process with a cumulative equivalent strain of 4 or more, It has a crystal structure composed of crystal grains having an average grain size in the longitudinal direction of 10 ⁇ m or less and an average grain size in a direction perpendicular to the longitudinal direction of 2 ⁇ m or less.
  • the lower limit value of the average grain size in the direction perpendicular to the longitudinal direction and the longitudinal direction of the crystal grains is about 0.3 ⁇ m, respectively.
  • the average grain size in the longitudinal direction of the crystal grains constituting the crystal structure is 10 ⁇ m or less, and the average grain size in the direction orthogonal to the longitudinal direction is 2 ⁇ m or less. Therefore, coarse fibrous crystals are not included, and a fine crystal structure with excellent isotropic properties is obtained. For this reason, even if repeated deformation is applied, strain localization is unlikely to occur in the crystal structure, and embrittlement is unlikely to be induced. As a result, generation of fatigue cracks can be suppressed, and fatigue resistance characteristics (bending resistance) can be improved.
  • the material is a wire
  • the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 80 ⁇ m
  • the longitudinal direction is a wire drawing of the wire drawing process.
  • the average grain size in the longitudinal direction of the crystal grains constituting the crystal structure is 10 ⁇ m or less, and the average grain size in the direction perpendicular to the longitudinal direction is 2 ⁇ m or less. Therefore, coarse fibrous crystals are not included, and a fine crystal structure excellent in isotropy is formed. For this reason, even when repeated deformation is applied, strain localization is unlikely to occur in the crystal structure, and the induction of embrittlement is suppressed. As a result, the occurrence of fatigue cracks can be suppressed and the fatigue resistance (bending resistance) is improved.
  • the material is a wire
  • the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 80 ⁇ m
  • the longitudinal direction is the wire drawing process
  • the cross-sectional area reduction rate before and after one processing is 20% or less It becomes easy to repeatedly and strongly process the wire.
  • the equivalent strain introduced by one process is 0.5 or more, the accumulated equivalent strain of the wire can be easily set to an arbitrary value of 4 or more by repeating strong processing.
  • the cumulative equivalent strain of the wire can be easily quantitatively evaluated, and the cumulative equivalent strain of the wire can be accurately adjusted.
  • a gripping means for pressing and holding a side portion of the wire is provided in front of one side opening of the through hole, and the wire is pushed into the through hole by the gripping means.
  • the long wire can be continuously strongly processed.
  • the wire drawing process includes a pre-drawing process for reducing the diameter of the wire to form a fine wire, and a finish wire drawing process for forming a strand from the thin wire.
  • the pre-drawing process is performed in a range where the cross-sectional area reduction rate is 5 to 30% and the finish-drawing process is performed in a range where the processing degree is 3 to 11, the cross-sectional area reduction rate in the pre-drawing process
  • the burden of the finish wire drawing process for forming the wire from the thin wire is reduced, and the wire formed and the surface roughening are prevented. be able to.
  • the crystal structure of the wire before the drawing process is refined It is possible to prevent the crystal grains from growing in the direction parallel to the wire drawing direction by confining the strain caused by the pre-drawing process in the refined crystal grains.
  • the preheating when the preheating is performed at a temperature lower by 20 to 100 ° C. than the recrystallization temperature of the wire that has been strongly processed, the wire before the wire drawing is performed.
  • the refinement of the crystal structure can be reliably achieved.
  • the recrystallization of the crystal structure constituting the element wire is performed. Crystallization can be promoted to easily refine the structure.
  • the microcrystalline metal conductor 10 according to the first embodiment of the present invention is a wire 11 (see FIG. 3) that is an example of a material that has been subjected to strong processing with a cumulative equivalent strain of 4 or more.
  • a shape imparting process it is an example of a shape imparting process, and is obtained by performing a wire drawing process to form a strand having a wire diameter of 50 to 120 ⁇ m.
  • the average particle diameter B in the longitudinal direction (the wire drawing direction during the wire drawing process) Has a crystal structure composed of crystal grains 12 having an average grain size A of 0.3 ⁇ m or more and 2 ⁇ m or less in a direction perpendicular to the longitudinal direction (drawing direction).
  • the material of the wire 11 is a material (for example, copper, copper alloy, aluminum, aluminum alloy etc.) applied to the strand for cables (electric wires), there will be no restriction
  • the crystal grains 12 constituting the elemental crystal structure have an average grain size B in the drawing direction of 0.3 ⁇ m or more and 10 ⁇ m or less and an average grain in the direction perpendicular to the drawing direction.
  • the diameter A is 0.3 ⁇ m or more and 2 ⁇ m or less.
  • the size of the crystal grains 12 in a cross section perpendicular to the wire drawing direction that is, the grain size in a direction orthogonal to the wire drawing direction
  • the size of the crystal grains 12 in a cross section parallel to the wire drawing direction that is, the wire drawing.
  • the grain sizes in the linear direction have different dimensions within the above ranges, but are described with the same dimensions.
  • the average grain size A in the direction orthogonal to the drawing direction of the crystal grains 12 constituting the crystal structure of the strand is 0.3 ⁇ m or more and 2 ⁇ m or less, and the average grain diameter B in the drawing direction of the crystal grains 12 is
  • the thickness is 0.3 ⁇ m or more and 10 ⁇ m or less, the frequency of the presence of crystal grains (fibrous crystals) grown in the wire drawing direction in the crystal structure is reduced, and the uniformity of the crystal structure is improved. For this reason, when dynamic driving (for example, repeated bending) acts on the strand, strain is sequentially introduced (accumulated) in the crystal structure forming the strand, but the crystal structure has uniformity.
  • the introduced strain is uniformly distributed in the crystal structure, and an embrittlement region due to strain localization does not occur in the crystal structure. As a result, the generation of a microcrack that becomes the starting point of fatigue crack extension in the crystal structure is suppressed, and the fatigue resistance (bending resistance) is improved.
  • the number of breaks is 1,000,000 times (the average grain size A in the direction orthogonal to the drawing direction of the crystal grains 12 is 2 ⁇ m, and the average grain size B in the drawing direction of the crystal grains 12 is 20 ⁇ m).
  • the average particle size A is 2 ⁇ m and the average particle size B is 10 ⁇ m
  • the number of fractures is 2 million times
  • the number of times of fracture is 12 million times (average grain size).
  • the diameter A was 2 ⁇ m and the average particle diameter B was 20 ⁇ m.
  • the average particle diameter A was 2 ⁇ m and the average particle diameter B was 10 ⁇ m the number of breaks was 22 million.
  • the number of breaks is 2 million times (average particle size A is 2 ⁇ m, average particle size B is 20 ⁇ m). However, the number of breaks when the average particle size A is 2 ⁇ m and the average particle size B is 10 ⁇ m. Is 4 million times, and in the case of a copper-5 mass% silver-based alloy, the number of fractures has been 20 million times (average particle size A is 2 ⁇ m, average particle size B is 20 ⁇ m), but the average particle size A is 2 ⁇ m. When the average particle size B is 10 ⁇ m, the number of breaks is 40 million.
  • the accumulated equivalent strain epsilon N of the wire 11 is less than 4, in the process of wire is formed from a wire 11, not recrystallization noticeable in the crystal grains 12 constituting the crystal structure. Further, in the process of forming the strand from the wire 11, the portion along the direction orthogonal to the wire drawing direction of the crystal grains 12 is accompanied by a large processing in the direction orthogonal to the wire drawing direction (cross-sectional area reduction). Due to the reaction that the maximum length decreases due to compression deformation, the maximum length of the portion along the wire drawing direction of the crystal grains 12 tends to increase due to work drawing.
  • the length of the portion along the direction orthogonal to the drawing direction of the crystal grains 12 constituting the element wire is about 2 ⁇ m to 5 ⁇ m or less, and the length of the portion along the drawing direction of the crystal grains 12 The length exceeds about 10 ⁇ m and is about 25 ⁇ m or less, which causes a problem that a crystal structure including a fibrous crystal grown in the wire drawing direction is formed.
  • the cumulative equivalent strain ⁇ N introduced into the wire 11 is, for example, 4 or more and 20 or less, refinement of the crystal structure by recrystallization of the crystal grains 12 in the process of forming the strand from the wire 11, and the wire
  • the average grain size A in the direction perpendicular to the drawing direction of the crystal grains 12 constituting the crystal structure is 0.3 ⁇ m or more and 2 ⁇ m or less
  • the average grain diameter B in the drawing direction of the crystal grains 12 is 0.3 ⁇ m or more and 10 ⁇ m.
  • the upper limit value of the cumulative equivalent strain ⁇ N is set to 20 even if a cumulative equivalent strain ⁇ N exceeding 20 is introduced into the wire 11, the crystal grains 12 are proportional to the introduced cumulative equivalent strain ⁇ N. This is because miniaturization cannot be achieved.
  • the method for producing a microcrystalline metal conductor includes a melting step of melting a raw material (metal) of the microcrystalline metal conductor, and a casting for producing a wire 11 (an example of a material) having a predetermined shape from the molten metal. Process. Further, the method for manufacturing the microcrystalline metal conductor includes a strong processing step in which the wire 11 is subjected to a strong processing in which the cumulative equivalent strain is 4 or more, and a wire having a wire diameter of 50 to 120 ⁇ m from the wire 11 subjected to the strong processing.
  • the average grain size B in the longitudinal direction (drawing direction at the time of drawing) of the crystal grains 12 constituting the crystal structure forming the strand is 10 ⁇ m or less, and the longitudinal direction (drawing direction) And a wire drawing step for making the average particle size A in the direction orthogonal to 2) m or less. Details will be described below.
  • the cable is manufactured by twisting the manufactured strands to produce a stranded wire, applying an insulating resin coating to the stranded wire of a predetermined length, and combining and integrating the resin-coated stranded wires.
  • a predetermined amount of metal is put into a graphite crucible, and the metal is melted by high frequency induction heating.
  • the molten metal in the graphite crucible is agitated to achieve uniformity.
  • the molten metal in the graphite crucible is transferred to a container provided with a water-cooled graphite die, and the molten metal is passed through the graphite die and drawn outside, thereby performing continuous casting of the wire 11.
  • the continuous casting speed is 100 to 300 mm / min
  • the diameter of the wire 11 to be cast is 8 to 12 mm
  • the length is 30000 to 60000 mm.
  • a rectangular parallelepiped mold 14 in which a through hole 13 having a bending angle ⁇ of 90 degrees is formed is used to penetrate the mold 14.
  • the wire 11 is pushed from one side opening 15 of the hole 13 and discharged from the other side opening 16 of the through hole 13 provided in the side of the mold 14 (ECAP (Equal-Channel Angular Pressing) method).
  • ECAP Equal-Channel Angular Pressing
  • the wire 11 is strongly processed.
  • the inner diameter of the other-side opening 16 is set smaller than the inner diameter of the one-side opening 15 (for example, the opening cross-sectional area reduction rate is 1% or more and 20% or less). For this reason, the cross-sectional area reduction rate of the wire 11 is 1% or more and 20% or less before and after strong processing (same as before and after one processing).
  • the wire 11 is pushed into the through hole 13 (one side opening 15) in front of (above) the one side opening 15 of the through hole 13, as shown in FIGS.
  • This is performed by using a gripping means 19 having a pair of pressing portions 17 and 18 that are arranged and pressed and processed from both sides of the side of the wire 11 above the one side opening 15. That is, as shown in FIG. 4A, the central axis position of the one-side opening 15 and the central axis position of the wire 11 are matched, and the lower end of the wire 11 is directly above the one-side opening 15 of the through-hole 13. Be placed.
  • the dummy wire comes into contact with the terminal end of the wire 11 and is gripped.
  • a dummy wire is press-fitted into the through hole 13 using the means 19. Thereby, the wire 11 can be pushed out by the dummy wire, and the wire 11 can be taken out from the other opening 16 of the through hole 13.
  • the equivalent strain ⁇ 1 when the wire 11 passes through the through-hole 13 once is 0.5 to 1 It becomes.
  • the equivalent strain ⁇ 1 when the wire 11 passes through the through hole 13 once is not significantly affected by the arc angle ⁇ of the bent portion. Therefore, when the bending angle ⁇ is 90 degrees, P + Q can be approximated to 1.
  • the strain is 0.58). Therefore, by determining the number of times N that the wire 11 passes through the through-hole 13, it is possible to quantitatively easily evaluate the cumulative equivalent strain epsilon N of wires 11, the cumulative equivalent strain epsilon N of the wire 11 accurately Can be adjusted. When the cumulative equivalent strain of the wire 11 is 4 or more, the number N of times of passing through the through hole 13 is 7 or more.
  • FIG. 5 shows a gripping means 20 according to a modification.
  • the gripping means 20 is provided in the circumferential direction of the outer peripheral portion at different height positions in the vertical direction of the side surface of the wire 11 located in front (upward) of the one side opening 15 of the through-hole 13 formed in the upper portion of the mold 14. Abutting at different angular positions (for example, angular positions that divide the circumferential direction into four equal parts), the region above the one side opening 15 of the wire 11 is supported in a standing state with respect to the one side opening 15.
  • An upper holding portion 22 and 23 are provided.
  • the gripping means 20 is provided between the upper and lower holding portions 22 and 23 and arranged side by side in the vertical direction, and the outer periphery at different height positions on the side surfaces between the upper and lower holding portions 22 and 23 of the wire 11.
  • Each of which is provided with a pair of rolls 24 and 25 that respectively feed the wire 11 downward by rotating while pressing the opposing portions of each part from the outside in the radial direction, and having lower drive parts 26 and 27, respectively.
  • the axial center direction of the roll 24 serving as the pair of the upper drive unit 26 and the axial center direction of the roll 25 serving as the pair of the lower drive unit 27 intersect (for example, orthogonal).
  • the rolls 24 and 25 of the upper and lower drive units 26 and 27 are rotated.
  • the wire 11 moves downward, passes between the pair of rolls 25 of the lower drive unit 27, the front side of the wire 11 is supported by the lower holding unit 23, and the central axis position of the wire 11 is the through hole 13.
  • the lower end of the wire 11 is disposed immediately above the one-side opening 15 of the through hole 13 in a state where it coincides with the central axis position of the one-side opening 15.
  • the rolls 24 and 25 of the upper and lower drive units 26 and 27 are rotated, the front side of the wire 11 is gradually pushed into the through-hole 13. It protrudes from the other side opening 16 of the hole 13.
  • the rolls 24 of the upper and lower drive units 26 and 27 Therefore, the tip of the dummy wire is brought into contact with the terminal end of the wire 11, and the dummy wire is moved downward by the rolls 24 and 25 of the upper and lower drive units 26 and 27.
  • the wire 11 is pushed out by the dummy wire, and the wire 11 can pass through the through hole 13.
  • the drawing process includes a pre-drawing process (rough drawing) in which the wire 11 is reduced in diameter to be a fine line, and a finish drawing process in which a strand is formed from the thin line.
  • the pre-drawing process is performed in a range in which the cross-sectional area reduction rate of the wire 11 is 5 to 30% using, for example, a swaging machine.
  • the reason why the cross-sectional area reduction rate of the wire 11 is in the range of 5 to 30% is that when the cross-sectional area reduction rate is less than 5%, the burden of the finish drawing process for forming the wire from the thin wire becomes high. Since disconnection and surface roughness occur, it is not preferable.
  • the cross-sectional area reduction rate exceeds 30%, the diameter of the thin wire is too thin and handling becomes difficult, and the productivity (wire forming speed) decreases, which is not preferable.
  • the pre-drawing process may be performed after pre-heating the wire 11 that has been subjected to strong processing.
  • the preheating temperature is in the range of 1 to 50 hours in an inert gas atmosphere at a temperature 20 to 100 ° C. lower than the recrystallization temperature of the wire 11 that has been strongly processed.
  • the finish wire drawing process for forming the wire from the fine wire is performed by passing the fine wire through a wire drawing die cooled with a coolant (for example, oil), for example.
  • a coolant for example, oil
  • the degree of processing when forming a strand from a thin wire is in the range of 3-11.
  • the degree of processing is a value calculated by ln (S 0 / S 1 ), where S 0 is the cross-sectional area of the thin wire and S 1 is the cross-sectional area of the strand.
  • the crystal structure is refined by recrystallization of the crystal grains 12 in the process of forming the strands from the wires 11 via the fine wires, and the fine wires from the wires 11 are reduced.
  • the average grain size B in the longitudinal direction (drawing direction during wire drawing) of the crystal grains 12 constituting the crystal structure forming the strands is 10 ⁇ m or less and orthogonal to the longitudinal direction (drawing direction).
  • the average particle size A in the direction can be 2 ⁇ m or less.
  • the finish wire drawing treatment may be performed after performing fine wire heating in which the fine wire is heated at a temperature 10 to 70 ° C. lower than the recrystallization temperature of the fine wire.
  • fine wire heating By performing the fine wire heating, the recrystallization of the crystal grains constituting the fine lines is promoted, the crystal grains 12 are refined, and the strain introduced into the crystal grains is removed, and the fine lines are removed. It is possible to improve the extensibility (drawing property) of a fine wire required when a wire is formed.
  • the temperature of the fine wire heating is set lower than the recrystallization temperature by more than 70 ° C., the recrystallization is not promoted, the strain removal in the fine wire is insufficient, and the extensibility of the fine wire cannot be improved.
  • the temperature of the fine wire heating is set higher than the recrystallization temperature of ⁇ 10 ° C., the crystal structure constituting the fine wire is not preferable because grain growth occurs with recrystallization.
  • the formed wire may be finish-heated at a temperature 10 to 70 ° C. lower than the recrystallization temperature of the wire.
  • recrystallization of the crystal grains 12 constituting the strands is promoted, and the average grain size B in the longitudinal direction (drawing direction) of the crystal grains 12 constituting the crystal structure forming the strands is 10 ⁇ m or less.
  • the average particle diameter A in the direction orthogonal to the longitudinal direction (drawing direction) can be efficiently adjusted to 2 ⁇ m or less.
  • the temperature of the finish heat treatment is set to be lower than the recrystallization temperature of the strand formed by die drawing by more than 70 ° C., the recrystallization is not promoted and the crystalline structure constituting the strand is not increased.
  • the temperature of the finish heat treatment is set higher than the recrystallization temperature of ⁇ 10 ° C.
  • the crystal structure constituting the strand causes grain growth along with recrystallization (that is, the crystal structure). Is not preferable).
  • an HPT (High-Pressure Torsion) method can also be used as a strong processing method.
  • HPT High-Pressure Torsion
  • ARB Accelulative Roll Bonding
  • a strongly processed material can be produced by cutting a wire from a laminated processed body by mechanical cutting or the like.
  • the microcrystalline metal conductor according to the second embodiment of the present invention introduces a cumulative equivalent strain of 4 or more at the time of wire drawing (an example of strong processing) for forming a strand having a wire diameter of 50 to 120 ⁇ m from a wire.
  • the average particle size in the longitudinal direction (drawing direction during drawing) is 0.3 ⁇ m or more and 10 ⁇ m or less, and the average particle size in the direction perpendicular to the longitudinal direction (drawing direction) is 0. It has a crystal structure composed of crystal grains of 3 ⁇ m or more and 2 ⁇ m or less, that is, does not include coarse fibrous crystals extending in the longitudinal direction, and has a fine crystal structure excellent in isotropic properties.
  • microcrystalline metal conductor according to the second embodiment strain localization is difficult to occur in the crystal structure even when repeated deformation is applied, and embrittlement is difficult to be induced. As a result, generation of fatigue cracks can be suppressed, and fatigue resistance characteristics (bending resistance) can be improved.
  • the method for producing a microcrystalline metal conductor according to the second embodiment includes a melting step of melting a raw material (metal) of the microcrystalline metal conductor, and a predetermined shape, for example, an outer diameter of 6 to 10 mm, from the molten metal.
  • the crystal structure of the strands is 0.3 to 10 ⁇ m in average length in the longitudinal direction (drawing direction during wire drawing) It is composed of crystal grains having an average grain size in the direction orthogonal to the direction (drawing direction) of 0.3 to 2 ⁇ m.
  • Example 1 A predetermined amount of 99.95% by mass of aluminum was put into a graphite crucible and stirred and melted at 720 ° C. by high-frequency induction heating (the melting step). Then, the obtained molten metal was transferred to a vessel provided with a graphite die, and a wire having a diameter of 10 mm and a length of 100 mm was continuously cast at a casting speed of about 300 mm / min through a water-cooled graphite die (above) Casting process).
  • a die having an inner diameter of 10 mm on one side and an inner diameter of 9.8 mm on the other side and having a through hole bent at 90 degrees is attached to a press, and the one side opening formed in the die
  • strong processing by the ECAP method of pushing the wire at a pushing speed of about 200 mm / min and discharging it from the other side opening of the mold is repeated 3, 5, 7, and 9 times at room temperature, respectively. Cumulative equivalent strains of 2.9, 4.0, and 5.2 were introduced.
  • the inorganic lubricant for example, molybdenum disulfide
  • a recrystallization temperature is measured using a test piece taken from a 9.8 mm diameter wire that has been subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere Preheating was performed for 2 hours in (an example of an inert gas atmosphere). And the wire after a preheating shape
  • the recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 300 mm / min and formed into a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Inside was subjected to finishing heating for 4 hours to obtain a strand (drawing step).
  • a nitrogen gas atmosphere an example of an inert gas atmosphere
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is cumulative.
  • the equivalent strain was 1.7, it was 20 ⁇ m
  • the cumulative equivalent strain was 2.9, it was 15 ⁇ m
  • the cumulative equivalent strain was 4.0, it was 10 ⁇ m
  • the cumulative equivalent strain was 5.2, it was 2 ⁇ m.
  • the electrical conductivity of the obtained strand was measured, the cable whose cross-sectional area is 0.2 mm ⁇ 2 > was produced from the strand, and the cable bending test was performed at normal temperature, and the frequency
  • Example 5 to 8 A wire having a diameter of 10 mm and a length of 100 mm was produced in the same manner as in Experimental Examples 1 to 4. Then, as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and cumulative equivalent strains of 1.7, 2.9, 4.0, and 5.2 were introduced into the obtained wires. Next, the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heating temperature. Preheating was performed in a gas atmosphere for 2 hours.
  • the recrystallization temperature is measured using a test piece taken from the fine wire, the temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and the fine wire heating is performed for 2 hours in the nitrogen gas atmosphere. went.
  • the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 300 mm / min and formed into a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process). .
  • the recrystallization temperature is measured using a test piece taken from the strand, and the temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and finish heating is performed for 1 hour in a nitrogen gas atmosphere. I went to get a strand.
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 1 shows the conductivity values and the number of cable breaks.
  • FIG. 6 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature.
  • Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere).
  • the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature 40 ° C.
  • the recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours.
  • the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process).
  • the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere)
  • the finishing heat treatment for 4 hours was performed in the inside (the wire drawing process).
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is cumulative.
  • Example 14 to 18 A wire having a diameter of 10 mm and a length of 100 mm was produced in the same manner as in Experimental Examples 9 to 13. In the same manner as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and the obtained wires had a cumulative equivalent strain of 1.7, 2.9, 4.0, 4.6, and 5.2. Was introduced.
  • the recrystallization temperature was measured using a test piece taken from a strongly processed wire having a diameter of 9.8 mm, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature. And preheating was performed for 2 hours in a nitrogen gas atmosphere (an example of an inert gas atmosphere). And the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours.
  • the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process).
  • the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere)
  • the finishing heat treatment for 2 hours was performed in the inside (the wire drawing process).
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 1 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is cumulative.
  • the equivalent strain is 1.7, it is 20 ⁇ m
  • the cumulative equivalent strain is 2.9, it is 15 ⁇ m
  • the cumulative equivalent strain is 4.0, it is 10 ⁇ m
  • the cumulative equivalent strain is 4.6, it is 6 ⁇ m
  • the cumulative equivalent strain is 5.2, it is 2 ⁇ m. It was.
  • the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature.
  • Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere).
  • the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature 40 ° C.
  • the recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours.
  • the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process).
  • the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere)
  • the finish heat treatment for 1 hour was performed in the inside (the wire drawing process).
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is 20 ⁇ m when the cumulative equivalent strain is 1.7, 15 ⁇ m when the cumulative equivalent strain is 2.9, 10 ⁇ m when the cumulative equivalent strain is 4.0, 5 ⁇ m when the cumulative equivalent strain is 4.6, and 2 ⁇ m when the cumulative equivalent strain is 5.2. Met.
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 2 shows the conductivity values and the number of cable breaks.
  • FIG. 7 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • the obtained molten metal was transferred to a vessel provided with a graphite die, and a wire having a diameter of 10 mm and a length of 100 mm was continuously cast at a casting speed of about 300 mm / min through a water-cooled graphite die (above) Casting process).
  • the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature.
  • Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere).
  • the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature 40 ° C.
  • the recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours.
  • the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process).
  • the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere)
  • the finish heat treatment for 1 hour was performed in the inside (the wire drawing process).
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 3 shows the conductivity values and the number of cable breaks.
  • FIG. 6 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • the recrystallization temperature was measured using a test piece taken from a strongly processed wire having a diameter of 9.8 mm, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature. And preheating was performed for 2 hours in a nitrogen gas atmosphere (an example of an inert gas atmosphere). And the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the heating temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the thin wire heated was passed through a water-cooled wire drawing die at a drawing speed of 1500 mm / min, and formed into a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the strand, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finishing heat treatment for 4 hours was performed in the inside (the wire drawing process).
  • a nitrogen gas atmosphere an example of an inert gas atmosphere
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is cumulative.
  • the equivalent strain was 1.7, it was 20 ⁇ m
  • the cumulative equivalent strain was 2.9, it was 15 ⁇ m
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 4 shows the conductivity values and the number of cable breaks.
  • FIG. 6 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature.
  • Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere).
  • the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature lower by 45 ° C.
  • the heating temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the thin wire heated was passed through a water-cooled wire drawing die at a drawing speed of 1500 mm / min, and formed into a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the strand, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finishing heat treatment for 4 hours was performed in the inside (the wire drawing process).
  • a nitrogen gas atmosphere an example of an inert gas atmosphere
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is cumulative.
  • the equivalent strain was 1.7, it was 20 ⁇ m
  • the cumulative equivalent strain was 2.9, it was 15 ⁇ m
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 4 shows the conductivity values and the number of cable breaks.
  • FIG. 7 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • Example 36 to 38 A wire having a diameter of 10 mm and a length of 100 mm was produced in the same manner as in Experimental Examples 32-35. Then, as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and cumulative equivalent strains of 1.7, 4.0, and 5.2 were introduced into the obtained wires.
  • the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature.
  • Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere).
  • the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape
  • the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature lower by 45 ° C.
  • the heating temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the thin wire heated was passed through a water-cooled wire drawing die at a drawing speed of 1500 mm / min, and formed into a strand having a diameter of 80 ⁇ m (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the strand, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finish heat treatment for 1 hour was performed in the inside (the wire drawing process).
  • a nitrogen gas atmosphere an example of an inert gas atmosphere
  • the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 ⁇ m
  • the average particle diameter B in the drawing direction of the crystal grains is
  • the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 4 shows the conductivity values and the number of cable breaks.
  • FIG. 7 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
  • the average grain size in the direction perpendicular to the wire drawing direction of the crystal grains constituting the crystal structure is 2 ⁇ m or less.
  • the average grain size in the wire drawing direction is 10 ⁇ m or less
  • the number of cable breaks is about twice as large as that when the average grain size in the wire drawing direction exceeds 10 ⁇ m. It was confirmed that there was a transition region in which the number of cable breaks increased rapidly when the average particle size in the wire drawing direction was between 15 ⁇ m and 10 ⁇ m. Further, as shown in FIGS.
  • the present invention has been described with reference to the embodiments. However, the present invention is not limited to the configurations described in the above-described embodiments, and is within the scope of the matters described in the claims. Other embodiments and modifications that can be considered in the above are also included. Further, the present invention includes a combination of components included in the present embodiment and other embodiments and modifications.
  • microcrystalline metal conductor and the manufacturing method thereof according to the present invention can be used particularly for cables that are repeatedly bent in industrial robots, consumer robots, automobile wiring, and the like. As a result, it is possible to provide a device or device having a longer lifetime.

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Abstract

A microcrystal metal conductor (10) and a method for manufacturing the same, whereby the difference between the size of crystal grains in the longitudinal direction thereof and the size of crystal grains in the direction orthogonal to the longitudinal direction is reduced, isotropic size reduction in the crystal structure is promoted, and bend resistance is enhanced, wherein a microcrystal metal conductor obtained by applying a shaping process to a raw material subjected to high deformation with a cumulative equivalent strain of at least 4 has a crystal structure comprising crystal grains (12) having an average grain diameter (B) of 10 µm or less in the longitudinal direction, and an average grain diameter (A) of 2 µm or less in the direction orthogonal to the longitudinal direction.

Description

微結晶金属導体及びその製造方法Microcrystalline metal conductor and method for producing the same
本発明は、例えば、産業用ロボット、民生用ロボット、自動車の配線等において、特に繰り返し曲げがかかるケーブル等に使用される耐屈曲性を備えた微結晶金属導体及びその製造方法に関する。 The present invention relates to a microcrystalline metal conductor having bending resistance, which is used for cables that are repeatedly bent, for example, in industrial robots, consumer robots, automobile wiring, and the like, and a method for manufacturing the same.
産業用ロボット、民生用ロボット、自動車等の配線に使用するケーブルは、アームの駆動時、ドアの開閉時に繰り返し曲げ負荷がかかるので、繰り返し曲げ負荷に対して強いケーブルが使用されている。例えば、特許文献１には、０．１～０．４質量％の鉄、０．１～０．３質量％の銅、０．０２～０．２質量％のマグネシウム、０．０２～０．２質量％のシリコンを含有し、更に、チタンとバナジウムを０．００１～０．０１質量％含むアルミニウム合金からなって、伸線方向の垂直断面における結晶粒径が５～２５μｍ、かつ常温におけるひずみ振幅が±０．１５％の繰り返し疲労を与えた場合の疲労寿命が５００００回以上であるアルミニウム合金線材が提案されている。
また、例えば、特許文献２には、軽量で引張り強度及び導電性に優れたアルミニウム系の導電材料として、スカンジウムを０．１～０．３質量％（重量％）含むアルミニウム合金が提案されている。 Cables used for wiring of industrial robots, consumer robots, automobiles, and the like are subjected to repeated bending loads when the arms are driven and when the doors are opened and closed. Therefore, cables that are strong against repeated bending loads are used. For example, Patent Document 1 discloses that 0.1 to 0.4% by mass of iron, 0.1 to 0.3% by mass of copper, 0.02 to 0.2% by mass of magnesium, and 0.02 to 0.02%. It is made of an aluminum alloy containing 2% by mass of silicon and 0.001 to 0.01% by mass of titanium and vanadium. The crystal grain size in the vertical cross section in the wire drawing direction is 5 to 25 μm, and the strain at room temperature. An aluminum alloy wire having a fatigue life of 50,000 times or more when repeated fatigue with an amplitude of ± 0.15% has been proposed.
For example, Patent Document 2 proposes an aluminum alloy containing 0.1 to 0.3% by mass (weight%) of scandium as an aluminum-based conductive material that is lightweight and excellent in tensile strength and conductivity. .
特開２０１０－１６３６７５号公報JP 2010-163675 A 特開平７－３１６７０５号公報JP 7-316705 A
しかしながら、特許文献１記載のアルミニウム合金線材の疲労寿命は、５００００回以上としており、実際のロボット等においては、一回の動作が２秒であるとすると、２日に８６４００回動くことになって、特許文献１のアルミニウム合金線材を用いても、ロボットを長期間安定して稼動させることはできない。 However, the fatigue life of the aluminum alloy wire described in Patent Document 1 is set to 50000 times or more, and in an actual robot or the like, if one operation is 2 seconds, 86400 turns per day. Even if the aluminum alloy wire of Patent Document 1 is used, the robot cannot be operated stably for a long period of time.
一方、特許文献２に記載されたアルミニウム合金として、例えばスカンジウムを０．１質量％含むアルミニウム合金からなるワイヤロッドをダイス伸線加工して線径が８０μｍの素線を作製し、この素線を用いて製造した断面積が０．２ｍｍ２のケーブルを試験体として、耐屈曲性能試験の一例である左右繰り返し曲げ試験（例えば、試験体に荷重１００ｇを負荷した状態で、曲げ半径が１５ｍｍ、折り曲げ角度範囲が±９０度）を行うと、ケーブルの破断回数は、３０～５０万回の範囲となる。このため、スカンジウムを０．１質量％含むアルミニウム合金から形成した素線を使用したケーブルを使用しても、ロボットを長期間安定して稼動させることは困難である。 On the other hand, as an aluminum alloy described in Patent Document 2, for example, a wire rod made of an aluminum alloy containing 0.1% by mass of scandium is die-drawn to produce a strand having a wire diameter of 80 μm. Using a cable with a cross-sectional area of 0.2 mm 2 manufactured using the test piece as a test piece, a left and right repeated bend test, which is an example of a bending resistance test (for example, with a test piece loaded with a load of 100 g, a bend radius of 15 mm, a bend When the angle range is ± 90 degrees, the number of cable breaks is in the range of 300,000 to 500,000 times. For this reason, it is difficult to operate the robot stably for a long period of time even if a cable using a strand formed of an aluminum alloy containing 0.1 mass% of scandium is used.
ここで、特許文献２に記載されたアルミニウム合金から形成した素線を使用したケーブルの破断回数が少ない原因は、ワイヤロッドからダイス伸線加工により線径が５０～８０μｍの素線を形成した場合、結晶粒の伸線方向に直交する方向に沿った部位の平均サイズは、例えば１μｍ以下に制御することができるが、結晶粒の伸線方向に沿った部位の平均サイズは、例えば１０μｍを超えて、非均一性の結晶組織（伸線方向に成長した繊維状結晶からなる結晶組織）が形成されるためである。即ち、非均一性の結晶組織からなる素線を繰り返し曲げると、結晶組織内に導入されるひずみは、結晶組織内に一様に分布せず、大きな線維状結晶の周囲に局在化し、ひずみの局在化に伴う脆化領域が発生する。そして、脆化領域では、微小き裂が誘起され易く、発生した微小き裂は直ちに疲労き裂に成長し、疲労破壊が促進されるためである。 Here, the reason why the number of breaks of the cable using the strand formed from the aluminum alloy described in Patent Document 2 is small is that when a strand having a wire diameter of 50 to 80 μm is formed from a wire rod by die drawing. The average size of the portion along the direction orthogonal to the drawing direction of the crystal grains can be controlled to, for example, 1 μm or less, but the average size of the portion along the drawing direction of the crystal grains exceeds, for example, 10 μm. This is because a non-uniform crystal structure (crystal structure composed of fibrous crystals grown in the wire drawing direction) is formed. That is, when a strand consisting of a non-uniform crystal structure is repeatedly bent, the strain introduced into the crystal structure is not distributed uniformly within the crystal structure, but is localized around the large fibrous crystal. An embrittled region is generated due to the localization of. In the embrittlement region, a micro crack is easily induced, and the generated micro crack immediately grows into a fatigue crack, and fatigue fracture is promoted.
本発明はかかる事情に鑑みてなされたもので、結晶粒の長手方向に沿ったサイズと長手方向に直交する方向に沿ったサイズとの差を小さくして、結晶組織の等方的な微細化を促進して耐屈曲性能の向上を図った微結晶金属導体及びその製造方法を提供することを目的とする。 The present invention has been made in view of such circumstances, and isotropic refinement of the crystal structure by reducing the difference between the size along the longitudinal direction of the crystal grains and the size along the direction orthogonal to the longitudinal direction. An object of the present invention is to provide a microcrystalline metal conductor in which bending resistance is improved by improving the bending resistance and a manufacturing method thereof.
前記目的に沿う第１の発明に係る微結晶金属導体は、累積相当ひずみが４以上となる強加工が施された素材に、形状付与加工を行って得られる微結晶金属導体であって、
長手方向の平均粒径が１０μｍ以下で、該長手方向に直交する方向の平均粒径が２μｍ以下である結晶粒から構成される結晶組織を有している。
なお、結晶粒の長手方向及び長手方向に直交する方向の平均粒径の下限値は、それぞれ０．３μｍ程度である。 The microcrystalline metal conductor according to the first invention in accordance with the above object is a microcrystalline metal conductor obtained by subjecting a material subjected to strong processing to a cumulative equivalent strain of 4 or more to a shape imparting process,
It has a crystal structure composed of crystal grains having an average grain size in the longitudinal direction of 10 μm or less and an average grain size in the direction orthogonal to the longitudinal direction of 2 μm or less.
The lower limit value of the average grain size in the longitudinal direction of the crystal grains and the direction orthogonal to the longitudinal direction is about 0.3 μm.
第１の発明に係る微結晶金属導体において、前記素材はワイヤであり、前記形状付与加工は線径が５０～１２０μｍの素線を形成する伸線加工であって、前記長手方向は前記伸線加工の伸線方向であり、前記長手方向に直交する方向は前記伸線方向に直交する方向とすることができる。 In the microcrystalline metal conductor according to the first invention, the material is a wire, and the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 120 μm, wherein the longitudinal direction is the wire drawing. It is a drawing direction of processing, and a direction orthogonal to the longitudinal direction can be a direction orthogonal to the drawing direction.
前記目的に沿う第２の発明に係る微結晶金属導体の製造方法は、素材に累積相当ひずみが４以上となる強加工を行い、該強加工が施された該素材に更に形状付与加工を行って形成する結晶組織を有する微結晶金属導体の製造方法であって、
前記結晶組織を、長手方向の平均粒径が１０μｍ以下、該長手方向に直交する方向の平均粒径が２μｍ以下の結晶粒から構成する。
なお、結晶粒の長手方向及び長手方向に直交する方向の平均粒径の下限値は、それぞれ０．３μｍ程度である。 The method for producing a microcrystalline metal conductor according to the second invention in accordance with the above object performs a strong process in which the cumulative equivalent strain is 4 or more on the material, and further performs a shape imparting process on the material subjected to the strong process. A method for producing a microcrystalline metal conductor having a crystal structure formed by:
The crystal structure is composed of crystal grains having an average grain size in the longitudinal direction of 10 μm or less and an average grain size in the direction perpendicular to the longitudinal direction of 2 μm or less.
The lower limit value of the average grain size in the longitudinal direction of the crystal grains and the direction orthogonal to the longitudinal direction is about 0.3 μm.
第２の発明に係る微結晶金属導体の製造方法において、前記素材はワイヤであり、前記形状付与加工は線径が５０～１２０μｍの素線を形成する伸線加工であって、前記長手方向は前記伸線加工の伸線方向であり、前記長手方向に直交する方向は前記伸線方向に直交する方向とすることができる。 In the method for producing a microcrystalline metal conductor according to the second invention, the material is a wire, and the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 120 μm, wherein the longitudinal direction is It is a wire drawing direction of the wire drawing process, and a direction orthogonal to the longitudinal direction can be a direction orthogonal to the wire drawing direction.
第２の発明に係る微結晶金属導体の製造方法において、金型に前記ワイヤを繰り返し通過させることにより前記強加工を行う際に、１回の加工前後に伴う断面積減少率が２０％以下であり、前記１回の加工で導入される相当ひずみが０．５以上であることが好ましい。 In the method for producing a microcrystalline metal conductor according to the second invention, when the strong processing is performed by repeatedly passing the wire through a mold, the cross-sectional area reduction rate before and after one processing is 20% or less. In addition, it is preferable that the equivalent strain introduced in the one-time processing is 0.5 or more.
第２の発明に係る微結晶金属導体の製造方法において、前記強加工は、前記ワイヤを前記金型の屈曲する貫通孔の一側から押し込み、他側から排出させることにより行うことが好ましい。 In the method for producing a microcrystalline metal conductor according to the second invention, the strong processing is preferably performed by pushing the wire from one side of the through hole where the mold is bent and discharging the wire from the other side.
第２の発明に係る微結晶金属導体の製造方法において、前記貫通孔の一側開口部の前方に前記ワイヤの側部を押圧して保持する把持手段を設け、該把持手段で該ワイヤを前記貫通孔に押し込むことが好ましい。 In the method for producing a microcrystalline metal conductor according to the second invention, a gripping means for pressing and holding the side portion of the wire is provided in front of the one side opening of the through hole, and the wire is held by the gripping means. It is preferable to push into the through hole.
第２の発明に係る微結晶金属導体の製造方法において、前記伸線加工は前記ワイヤを縮径して細線とする前伸線処理と、前記細線から前記素線を形成する仕上げ伸線処理とを有し、前記前伸線処理は、断面積減少率が５～３０％となる範囲で、前記仕上げ伸線処理は、加工度が３～１１となる範囲でそれぞれ行うことが好ましい。 In the method for manufacturing a microcrystalline metal conductor according to the second invention, the wire drawing is performed by a pre-drawing process for reducing the diameter of the wire to form a fine wire, and a finish wire drawing process for forming the strand from the thin wire. The pre-drawing process is preferably performed in a range where the cross-sectional area reduction rate is 5 to 30%, and the finish-drawing process is preferably performed in a range where the workability is 3 to 11.
第２の発明に係る微結晶金属導体の製造方法において、前記前伸線処理は、前記強加工が施された前記ワイヤを事前加熱した後に行うことが好ましい。 In the method for producing a microcrystalline metal conductor according to the second invention, the pre-drawing treatment is preferably performed after preheating the wire that has been subjected to the strong processing.
第２の発明に係る微結晶金属導体の製造方法において、前記事前加熱は、前記強加工が行われた前記ワイヤの有する再結晶温度より２０～１００℃低い温度で行うことが好ましい。 In the method for producing a microcrystalline metal conductor according to the second invention, it is preferable that the preheating is performed at a temperature lower by 20 to 100 ° C. than a recrystallization temperature of the wire subjected to the strong processing.
第２の発明に係る微結晶金属導体の製造方法において、前記仕上げ伸線処理は、前記細線を、該細線の有する再結晶温度より１０～７０℃低い温度で加熱する細線加熱を行った後に行うことが好ましい。 In the method for producing a microcrystalline metal conductor according to the second invention, the finish drawing is performed after performing fine wire heating in which the fine wire is heated at a temperature 10 to 70 ° C. lower than the recrystallization temperature of the fine wire. It is preferable.
第２の発明に係る微結晶金属導体の製造方法において、前記素線を、該素線の有する再結晶温度より１０～７０℃低い温度で仕上げ加熱することが好ましい。 In the method for producing a microcrystalline metal conductor according to the second invention, it is preferable that the strand is finish-heated at a temperature lower by 10 to 70 ° C. than a recrystallization temperature of the strand.
前記目的に沿う第３の発明に係る微結晶金属導体は、累積相当ひずみが４以上となる強加工を行って得られる微結晶金属導体であって、
長手方向の平均粒径が１０μｍ以下で、該長手方向に直交する方向の平均粒径が２μｍ以下である結晶粒から構成される結晶組織を有している。
なお、結晶粒の長手方向及び長手方向に直交する方向の平均粒径の下限値は、それぞれ０．３μｍ程度である。 The microcrystalline metal conductor according to the third aspect of the invention that meets the above-mentioned object is a microcrystalline metal conductor obtained by performing a strong process with a cumulative equivalent strain of 4 or more,
It has a crystal structure composed of crystal grains having an average grain size in the longitudinal direction of 10 μm or less and an average grain size in a direction perpendicular to the longitudinal direction of 2 μm or less.
In addition, the lower limit value of the average grain size in the direction perpendicular to the longitudinal direction and the longitudinal direction of the crystal grains is about 0.3 μm, respectively.
第１及び第３の発明に係る微結晶金属導体においては、結晶組織を構成する結晶粒の長手方向の平均粒径が１０μm以下で、かつ長手方向に直交する方向の平均粒径が２μｍ以下であるので、粗大な繊維状結晶が含まれず、等方性に優れた微細な結晶組織となる。このため、繰り返し変形が加わっても結晶組織内にひずみの局在化が生じ難く、脆化が誘起され難い。その結果、疲労き裂の発生が抑制でき、耐疲労特性（耐屈曲性能）の向上を図ることができる。 In the microcrystalline metal conductor according to the first and third inventions, the average grain size in the longitudinal direction of the crystal grains constituting the crystal structure is 10 μm or less, and the average grain size in the direction orthogonal to the longitudinal direction is 2 μm or less. Therefore, coarse fibrous crystals are not included, and a fine crystal structure with excellent isotropic properties is obtained. For this reason, even if repeated deformation is applied, strain localization is unlikely to occur in the crystal structure, and embrittlement is unlikely to be induced. As a result, generation of fatigue cracks can be suppressed, and fatigue resistance characteristics (bending resistance) can be improved.
第１の発明に係る微結晶金属導体において、素材がワイヤであり、形状付与加工は線径が５０～８０μｍの素線を形成する伸線加工であって、長手方向は伸線加工の伸線方向であり、長手方向に直交する方向は伸線方向に直交する方向である場合、素線の結晶組織内に、伸線方向に伸びる粗大な繊維状結晶が存在することを抑制できる。 In the microcrystalline metal conductor according to the first invention, the material is a wire, and the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 80 μm, and the longitudinal direction is a wire drawing of the wire drawing process. When the direction perpendicular to the longitudinal direction is the direction perpendicular to the wire drawing direction, it is possible to suppress the presence of coarse fibrous crystals extending in the wire drawing direction in the crystal structure of the strands.
第２の発明に係る微結晶金属導体の製造方法においては、結晶組織を構成する結晶粒の長手方向の平均粒径を１０μm以下、かつ長手方向に直交する方向の平均粒径を２μｍ以下とするので、粗大な繊維状結晶が含まれず、等方性に優れた微細な結晶組織が形成される。このため、繰り返し変形を加えても、結晶組織内にひずみの局在化が生じ難く、脆化の誘起が抑制される。その結果、疲労き裂の発生を抑制でき、耐疲労特性（耐屈曲性能）が向上する。 In the method for producing a microcrystalline metal conductor according to the second invention, the average grain size in the longitudinal direction of the crystal grains constituting the crystal structure is 10 μm or less, and the average grain size in the direction perpendicular to the longitudinal direction is 2 μm or less. Therefore, coarse fibrous crystals are not included, and a fine crystal structure excellent in isotropy is formed. For this reason, even when repeated deformation is applied, strain localization is unlikely to occur in the crystal structure, and the induction of embrittlement is suppressed. As a result, the occurrence of fatigue cracks can be suppressed and the fatigue resistance (bending resistance) is improved.
第２の発明に係る微結晶金属導体の製造方法において、素材がワイヤであり、形状付与加工は線径が５０～８０μｍの素線を形成する伸線加工であって、長手方向は伸線加工の伸線方向であり、長手方向に直交する方向は伸線方向に直交する方向である場合、伸線方向に伸びる粗大な繊維状結晶の存在が抑制された結晶組織を形成できる。 In the method for producing a microcrystalline metal conductor according to the second invention, the material is a wire, and the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 80 μm, and the longitudinal direction is the wire drawing process When the direction perpendicular to the longitudinal direction is perpendicular to the drawing direction, a crystal structure in which the presence of coarse fibrous crystals extending in the drawing direction is suppressed can be formed.
第２の発明に係る微結晶金属導体の製造方法において、金型にワイヤを繰り返し通過させることにより強加工を行う際に、１回の加工前後に伴う断面積減少率が２０％以下である場合、ワイヤを繰り返し強加工することが容易になる。また、１回の加工で導入される相当ひずみが０．５以上である場合、強加工を繰り返すことで、ワイヤの累積相当ひずみを４以上の任意の値に容易にすることができる。 In the method for manufacturing a microcrystalline metal conductor according to the second invention, when performing strong processing by repeatedly passing a wire through a mold, the cross-sectional area reduction rate before and after one processing is 20% or less It becomes easy to repeatedly and strongly process the wire. Moreover, when the equivalent strain introduced by one process is 0.5 or more, the accumulated equivalent strain of the wire can be easily set to an arbitrary value of 4 or more by repeating strong processing.
第２の発明に係る微結晶金属導体の製造方法において、強加工を、ワイヤを金型の屈曲する貫通孔の一側から押し込み、他側から排出させることにより行う場合、貫通孔の屈曲部の形状と、ワイヤが貫通孔を通過する回数を用いて、ワイヤの累積相当ひずみを定量的に容易に評価すると共に、ワイヤの累積相当ひずみを正確に調整することができる。 In the method for producing a microcrystalline metal conductor according to the second invention, when the strong processing is performed by pushing the wire from one side of the through hole that bends the mold and discharging it from the other side, Using the shape and the number of times the wire passes through the through-hole, the cumulative equivalent strain of the wire can be easily quantitatively evaluated, and the cumulative equivalent strain of the wire can be accurately adjusted.
第２の発明に係る微結晶金属導体の製造方法において、貫通孔の一側開口部の前方にワイヤの側部を押圧して保持する把持手段を設け、把持手段でワイヤを貫通孔に押し込む場合、長尺のワイヤの強加工を連続して行うことができる。 In the method for manufacturing a microcrystalline metal conductor according to the second invention, a gripping means for pressing and holding a side portion of the wire is provided in front of one side opening of the through hole, and the wire is pushed into the through hole by the gripping means. The long wire can be continuously strongly processed.
第２の発明に係る微結晶金属導体の製造方法において、伸線加工が、ワイヤを縮径して細線とする前伸線処理と、細線から素線を形成する仕上げ伸線処理とを有し、前伸線処理を、断面積減少率が５～３０％となる範囲で、仕上げ伸線処理を、加工度が３～１１となる範囲でそれぞれ行う場合、前伸線処理における断面積減少率の設定と仕上げ伸線処理における加工度の設定を組み合せることにより、細線から素線を形成する仕上げ伸線処理の負担を軽減すると共に、形成される素線の断線や表面の荒れを防止することができる。 In the method for producing a microcrystalline metal conductor according to the second invention, the wire drawing process includes a pre-drawing process for reducing the diameter of the wire to form a fine wire, and a finish wire drawing process for forming a strand from the thin wire. When the pre-drawing process is performed in a range where the cross-sectional area reduction rate is 5 to 30% and the finish-drawing process is performed in a range where the processing degree is 3 to 11, the cross-sectional area reduction rate in the pre-drawing process By combining the setting and the processing degree setting in the finish wire drawing process, the burden of the finish wire drawing process for forming the wire from the thin wire is reduced, and the wire formed and the surface roughening are prevented. be able to.
第２の発明に係る微結晶金属導体の製造方法において、前伸線処理を、強加工が施されたワイヤを事前加熱した後に行う場合、伸線加工を行う前のワイヤの結晶組織を微細化することができ、前伸線処理によるひずみを微細化された結晶粒内に閉じ込めることにより、伸線方向と平行方向に結晶粒が成長することを防止できる。 In the method for producing a microcrystalline metal conductor according to the second invention, when the pre-drawing process is performed after pre-heating the wire that has been subjected to strong processing, the crystal structure of the wire before the drawing process is refined It is possible to prevent the crystal grains from growing in the direction parallel to the wire drawing direction by confining the strain caused by the pre-drawing process in the refined crystal grains.
第２の発明に係る微結晶金属導体の製造方法において、事前加熱を、強加工が行われたワイヤの有する再結晶温度より２０～１００℃低い温度で行う場合、伸線加工を行う前のワイヤの結晶組織の微細化を確実に達成することができる。 In the method for producing a microcrystalline metal conductor according to the second invention, when the preheating is performed at a temperature lower by 20 to 100 ° C. than the recrystallization temperature of the wire that has been strongly processed, the wire before the wire drawing is performed. The refinement of the crystal structure can be reliably achieved.
第２の発明に係る微結晶金属導体の製造方法において、仕上げ伸線処理を、細線を、細線の有する再結晶温度より１０～７０℃低い温度で加熱する細線加熱を行った後に行う場合、細線に導入されたひずみを除去して、細線から素線が形成される際に必要な細線の伸び性（伸線性）を向上させることができる。 In the method for producing a microcrystalline metal conductor according to the second invention, when the finish wire drawing treatment is performed after performing fine wire heating in which the fine wire is heated at a temperature 10 to 70 ° C. lower than the recrystallization temperature of the fine wire, By removing the strain introduced into the wire, it is possible to improve the extensibility (drawability) of the fine wire required when the wire is formed from the fine wire.
第２の発明に係る微結晶金属導体の製造方法において、素線を、素線の有する再結晶温度より１０～７０℃低い温度で仕上げ加熱する場合、素線を構成している結晶組織の再結晶化を促進して、組織の微細化を容易に図ることができる。 In the method for producing a microcrystalline metal conductor according to the second invention, when the element wire is finish-heated at a temperature 10 to 70 ° C. lower than the recrystallization temperature of the element wire, the recrystallization of the crystal structure constituting the element wire is performed. Crystallization can be promoted to easily refine the structure.
本発明の第１の実施例に係る微結晶金属導体の結晶組織の概念図である。It is a conceptual diagram of the crystal structure of the microcrystalline metal conductor which concerns on 1st Example of this invention. 本発明の第１の実施例に係る微結晶金属導体の製造方法における製造フロー図である。It is a manufacturing flowchart in the manufacturing method of the microcrystalline metal conductor which concerns on 1st Example of this invention. 強加工時のワイヤの状態を示す説明図である。It is explanatory drawing which shows the state of the wire at the time of a strong process. （Ａ）～（Ｄ）はワイヤの強加工方法の説明図である。(A)-(D) are explanatory drawings of a method for strongly processing a wire. ワイヤの変形例に係る強加工方法の説明図である。It is explanatory drawing of the strong processing method which concerns on the modification of a wire. 実験例における結晶粒の伸線方向の平均粒径とケーブル破断回数の関係を示すグラフである。It is a graph which shows the relationship between the average particle diameter of the drawing direction of the crystal grain in an experiment example, and the frequency | count of a cable fracture. 実験例における結晶粒の伸線方向の平均粒径とケーブル破断回数の関係を示すグラフである。It is a graph which shows the relationship between the average particle diameter of the drawing direction of the crystal grain in an experiment example, and the frequency | count of a cable fracture.
続いて、添付した図面を参照しつつ、本発明を具体化した実施例につき説明し、本発明の理解に供する。
図１に示すように、本発明の第１の実施例に係る微結晶金属導体１０は、累積相当ひずみが４以上となる強加工が施された素材の一例であるワイヤ１１（図３参照）に、形状付与加工の一例であり、線径が５０～１２０μｍの素線を形成する伸線加工を行って得られるもので、長手方向（伸線加工時の伸線方向）の平均粒径Bが０．３μｍ以上１０μｍ以下で、長手方向（伸線方向）に直交する方向の平均粒径Ａが０．３μｍ以上２μｍ以下である結晶粒１２から構成される結晶組織を有している。
なお、ワイヤ１１の材質は、ケーブル（電線）用の素線に適用される材質（例えば、銅、銅合金、アルミニウム、アルミニウム合金等）であれば特に制約はない。以下、詳細に説明する。 Subsequently, embodiments of the present invention will be described with reference to the accompanying drawings for understanding of the present invention.
As shown in FIG. 1, the microcrystalline metal conductor 10 according to the first embodiment of the present invention is a wire 11 (see FIG. 3) that is an example of a material that has been subjected to strong processing with a cumulative equivalent strain of 4 or more. In addition, it is an example of a shape imparting process, and is obtained by performing a wire drawing process to form a strand having a wire diameter of 50 to 120 μm. The average particle diameter B in the longitudinal direction (the wire drawing direction during the wire drawing process) Has a crystal structure composed of crystal grains 12 having an average grain size A of 0.3 μm or more and 2 μm or less in a direction perpendicular to the longitudinal direction (drawing direction).
In addition, if the material of the wire 11 is a material (for example, copper, copper alloy, aluminum, aluminum alloy etc.) applied to the strand for cables (electric wires), there will be no restriction | limiting in particular. Details will be described below.
ワイヤ１１に累積相当ひずみが４以上となる強加工を施し、このワイヤ１１を伸線加工して素線を形成する場合、ワイヤ１１から素線が形成される過程で、結晶組織を構成している結晶粒に再結晶が生じて、素線の結晶組織を構成する結晶粒１２は、伸線方向の平均粒径Bが０．３μｍ以上１０μｍ以下で、伸線方向に直交する方向の平均粒径Ａが０．３μｍ以上２μｍ以下となる。なお、図１では、伸線方向に対して垂直断面にある結晶粒１２の寸法、即ち伸線方向に直交する方向の粒径、伸線方向と平行断面にある結晶粒１２の寸法、即ち伸線方向の粒径は、それぞれ前記範囲内で異なる寸法を有するが、同一寸法で記載している。 When the wire 11 is subjected to strong processing with a cumulative equivalent strain of 4 or more and the wire 11 is drawn to form a strand, a crystal structure is formed in the process of forming the strand from the wire 11. The crystal grains 12 constituting the elemental crystal structure have an average grain size B in the drawing direction of 0.3 μm or more and 10 μm or less and an average grain in the direction perpendicular to the drawing direction. The diameter A is 0.3 μm or more and 2 μm or less. In FIG. 1, the size of the crystal grains 12 in a cross section perpendicular to the wire drawing direction, that is, the grain size in a direction orthogonal to the wire drawing direction, the size of the crystal grains 12 in a cross section parallel to the wire drawing direction, that is, the wire drawing. The grain sizes in the linear direction have different dimensions within the above ranges, but are described with the same dimensions.
そして、素線の結晶組織を構成している結晶粒１２の伸線方向に直交する方向の平均粒径Ａが０．３μｍ以上２μｍ以下、かつ結晶粒１２の伸線方向の平均粒径Bが０．３μｍ以上１０μm以下になると、結晶組織内に伸線方向に成長した結晶粒（繊維状結晶）が存在する頻度が低下して、結晶組織の均一性が向上する。このため、素線に動的駆動（例えば繰り返し曲げ）が作用した場合、素線を形成している結晶組織内にはひずみが順次導入（蓄積）されるが、結晶組織が均一性を有するため、導入されたひずみは結晶組織内に一様に分布することになって、結晶組織内にひずみの局在化に伴う脆化領域が生じない。その結果、結晶組織内に疲労き裂の伸展の起点となる微小き裂の発生が抑制され、耐疲労特性（耐屈曲性能）が向上する。 The average grain size A in the direction orthogonal to the drawing direction of the crystal grains 12 constituting the crystal structure of the strand is 0.3 μm or more and 2 μm or less, and the average grain diameter B in the drawing direction of the crystal grains 12 is When the thickness is 0.3 μm or more and 10 μm or less, the frequency of the presence of crystal grains (fibrous crystals) grown in the wire drawing direction in the crystal structure is reduced, and the uniformity of the crystal structure is improved. For this reason, when dynamic driving (for example, repeated bending) acts on the strand, strain is sequentially introduced (accumulated) in the crystal structure forming the strand, but the crystal structure has uniformity. The introduced strain is uniformly distributed in the crystal structure, and an embrittlement region due to strain localization does not occur in the crystal structure. As a result, the generation of a microcrack that becomes the starting point of fatigue crack extension in the crystal structure is suppressed, and the fatigue resistance (bending resistance) is improved.
なお、結晶組織内に微小き裂が発生し疲労き裂として伸展する場合、結晶組織は一様に微細化されているため、疲労き裂は結晶粒１２と頻繁に衝突する。このため、疲労き裂が伸展する際、疲労き裂の偏向と疲労き裂の分岐が促進され、疲労き裂が一方向に伸展する際の速度を低下させることができる。その結果、繰り返し曲げ負荷に対する耐屈曲性（破断までの繰り返し曲げ回数、即ち破断回数）を向上させることができる。
例えば、アルミニウムの場合、従来では破断回数が１００万回（結晶粒１２の伸線方向に直交する方向の平均粒径Ａが２μｍ、結晶粒１２の伸線方向の平均粒径Bが２０μｍ）であったが、平均粒径Ａが２μｍ、平均粒径Bが１０μｍでは破断回数は２００万回となり、アルミニウム－０．３質量％スカンジウム系合金の場合、従来では破断回数が１２００万回（平均粒径Ａが２μｍ、平均粒径Bが２０μｍ）であったが、平均粒径Ａが２μｍ、平均粒径Bが１０μｍでは破断回数は２２００万回となる。また、銅の場合、従来では破断回数が２００万回（平均粒径Ａが２μｍ、平均粒径Bが２０μｍ）であったが、平均粒径Ａが２μｍ、平均粒径Bが１０μｍでは破断回数は４００万回、銅－５質量％銀系合金の場合、従来では破断回数が２０００万回（平均粒径Ａが２μｍ、平均粒径Bが２０μｍ）であったが、平均粒径Ａが２μｍ、平均粒径Bが１０μｍでは、破断回数は４０００万回となる。 When a micro crack is generated in the crystal structure and extends as a fatigue crack, the crystal structure is uniformly refined, so that the fatigue crack frequently collides with the crystal grains 12. For this reason, when the fatigue crack extends, the deflection of the fatigue crack and the branching of the fatigue crack are promoted, and the speed at which the fatigue crack extends in one direction can be reduced. As a result, it is possible to improve the bending resistance against repeated bending loads (the number of repeated bendings until breakage, that is, the number of breaks).
For example, in the case of aluminum, conventionally, the number of breaks is 1,000,000 times (the average grain size A in the direction orthogonal to the drawing direction of the crystal grains 12 is 2 μm, and the average grain size B in the drawing direction of the crystal grains 12 is 20 μm). However, when the average particle size A is 2 μm and the average particle size B is 10 μm, the number of fractures is 2 million times, and in the case of an aluminum-0.3 mass% scandium alloy, the number of times of fracture is 12 million times (average grain size). The diameter A was 2 μm and the average particle diameter B was 20 μm. However, when the average particle diameter A was 2 μm and the average particle diameter B was 10 μm, the number of breaks was 22 million. In the case of copper, the number of breaks is 2 million times (average particle size A is 2 μm, average particle size B is 20 μm). However, the number of breaks when the average particle size A is 2 μm and the average particle size B is 10 μm. Is 4 million times, and in the case of a copper-5 mass% silver-based alloy, the number of fractures has been 20 million times (average particle size A is 2 μm, average particle size B is 20 μm), but the average particle size A is 2 μm. When the average particle size B is 10 μm, the number of breaks is 40 million.
ここで、ワイヤ１１の累積相当ひずみεＮが４未満の場合、ワイヤ１１から素線が形成される過程で、結晶組織を構成している結晶粒１２における再結晶は顕著とならない。また、ワイヤ１１から素線が形成される過程で、伸線方向に直交する方向への大きな加工（断面積減少）に伴って、結晶粒１２の伸線方向に直交する方向に沿った部位の最大長さが圧縮変形で減少する反作用で、結晶粒１２の伸線方向に沿った部位の最大長さは加工延伸による増加が生じ易い。その結果、素線を構成している結晶粒１２の伸線方向に直交する方向に沿った部位の長さは２μｍを超えて５μｍ以下程度となり、結晶粒１２の伸線方向に沿った部位の長さは１０μｍを超えて２５μm以下程度となって、伸線方向に成長した繊維状結晶を含んだ結晶組織が形成されるという問題が生じる。 Here, when the accumulated equivalent strain epsilon N of the wire 11 is less than 4, in the process of wire is formed from a wire 11, not recrystallization noticeable in the crystal grains 12 constituting the crystal structure. Further, in the process of forming the strand from the wire 11, the portion along the direction orthogonal to the wire drawing direction of the crystal grains 12 is accompanied by a large processing in the direction orthogonal to the wire drawing direction (cross-sectional area reduction). Due to the reaction that the maximum length decreases due to compression deformation, the maximum length of the portion along the wire drawing direction of the crystal grains 12 tends to increase due to work drawing. As a result, the length of the portion along the direction orthogonal to the drawing direction of the crystal grains 12 constituting the element wire is about 2 μm to 5 μm or less, and the length of the portion along the drawing direction of the crystal grains 12 The length exceeds about 10 μm and is about 25 μm or less, which causes a problem that a crystal structure including a fibrous crystal grown in the wire drawing direction is formed.
一方、強加工によりワイヤ１１に４以上の大きな累積相当ひずみεＮを導入すると、ワイヤ１１から素線が形成される過程で、結晶粒１２の伸線方向に直交する方向に沿った部位の最大長さが圧縮変形で減少する反作用で、結晶粒１２の伸線方向に沿った部位の最大長さが加工延伸により増加することが生じても、ワイヤ１１から素線が形成される過程で、結晶組織を構成している結晶粒１２の再結晶が非常に顕著となるため、結晶粒１２の微細化が進行し、素線の結晶組織の均一性を向上させることが可能になる。しかし、強加工を行うことによってワイヤ１１の製造コストが大きく上昇するという問題が生じる。 On the other hand, when a large cumulative equivalent strain ε N of 4 or more is introduced into the wire 11 by strong processing, the maximum of the portion along the direction orthogonal to the wire drawing direction of the crystal grains 12 in the process of forming the strand from the wire 11 Even when the maximum length of the portion along the wire drawing direction of the crystal grains 12 is increased by work drawing due to a reaction in which the length is reduced by compressive deformation, in the process of forming the wire from the wire 11, Since recrystallization of the crystal grains 12 constituting the crystal structure becomes very remarkable, the crystal grains 12 are further refined and the uniformity of the crystal structure of the strands can be improved. However, there is a problem that the manufacturing cost of the wire 11 is greatly increased by performing strong processing.
そこで、ワイヤ１１に導入する累積相当ひずみεＮを、例えば、４以上２０以下とすれば、ワイヤ１１から素線が形成される過程における結晶粒１２の再結晶による結晶組織の微細化と、ワイヤ１１から素線が形成される過程における結晶粒１２の伸線方向に直交する方向の粒径が減少する反作用に伴う結晶粒１２の伸線方向の粒径の増加が競合する結果、素線の結晶組織を構成している結晶粒１２の伸線方向に直交する方向の平均粒径Ａを０．３μｍ以上２μｍ以下、かつ結晶粒１２の伸線方向の平均粒径Bを０．３μｍ以上１０μm以下とすることができる。
ここで、累積相当ひずみεＮの上限値を２０としたのは、ワイヤ１１に２０を超える累積相当ひずみεＮを導入しても、導入した累積相当ひずみεＮに比例して結晶粒１２の微細化を図ることができないからである。 Therefore, if the cumulative equivalent strain ε N introduced into the wire 11 is, for example, 4 or more and 20 or less, refinement of the crystal structure by recrystallization of the crystal grains 12 in the process of forming the strand from the wire 11, and the wire As a result of competing increases in grain size in the drawing direction of the crystal grains 12 due to a reaction in which the grain size in the direction perpendicular to the drawing direction of the crystal grains 12 in the process of forming the strands from 11 competes, The average grain size A in the direction perpendicular to the drawing direction of the crystal grains 12 constituting the crystal structure is 0.3 μm or more and 2 μm or less, and the average grain diameter B in the drawing direction of the crystal grains 12 is 0.3 μm or more and 10 μm. It can be as follows.
Here, the upper limit value of the cumulative equivalent strain ε N is set to 20 even if a cumulative equivalent strain ε N exceeding 20 is introduced into the wire 11, the crystal grains 12 are proportional to the introduced cumulative equivalent strain ε N. This is because miniaturization cannot be achieved.
続いて、本発明の第１の実施例に係る微結晶金属導体の製造方法について説明する。
図２に示すように、微結晶金属導体の製造方法は、微結晶金属導体の原料（金属）を溶融する溶融工程と、溶融した金属から所定形状のワイヤ１１（素材の一例）を製造する鋳造工程とを有している。更に、微結晶金属導体の製造方法は、ワイヤ１１に累積相当ひずみが４以上となる強加工を行う強加工工程と、強加工が施されたワイヤ１１から線径が５０～１２０μｍの素線を形成する形状付与加工として、素線を形成している結晶組織を構成する結晶粒１２の長手方向（伸線加工時の伸線方向）の平均粒径Bを１０μm以下、長手方向（伸線方向）に直交する方向の平均粒径Ａを２μｍ以下にする伸線加工工程とを有している。以下、詳細に説明する。
なお、製造された素線を撚り合わせて撚り線を作製し、所定長さの撚り線に絶縁性の樹脂被覆を施し、樹脂被覆された撚り線を組み合せて一体化することによりケーブルが製造される。 Then, the manufacturing method of the microcrystalline metal conductor based on the 1st Example of this invention is demonstrated.
As shown in FIG. 2, the method for producing a microcrystalline metal conductor includes a melting step of melting a raw material (metal) of the microcrystalline metal conductor, and a casting for producing a wire 11 (an example of a material) having a predetermined shape from the molten metal. Process. Further, the method for manufacturing the microcrystalline metal conductor includes a strong processing step in which the wire 11 is subjected to a strong processing in which the cumulative equivalent strain is 4 or more, and a wire having a wire diameter of 50 to 120 μm from the wire 11 subjected to the strong processing. As the shape imparting process to be formed, the average grain size B in the longitudinal direction (drawing direction at the time of drawing) of the crystal grains 12 constituting the crystal structure forming the strand is 10 μm or less, and the longitudinal direction (drawing direction) And a wire drawing step for making the average particle size A in the direction orthogonal to 2) m or less. Details will be described below.
The cable is manufactured by twisting the manufactured strands to produce a stranded wire, applying an insulating resin coating to the stranded wire of a predetermined length, and combining and integrating the resin-coated stranded wires. The
溶融工程では、所定量の金属をグラファイトルツボ内に投入し、高周波誘導加熱により金属を溶融する。なお、高周波誘導加熱時、グラファイトルツボ内の溶融金属を撹拌し、均一化を図る。 In the melting step, a predetermined amount of metal is put into a graphite crucible, and the metal is melted by high frequency induction heating. During high frequency induction heating, the molten metal in the graphite crucible is agitated to achieve uniformity.
鋳造工程では、グラファイトルツボ内の溶融金属を、水冷されたグラファイトダイスが設けられた容器に移し、溶融金属をグラファイトダイス内を通過させて外部に引き抜くことにより、ワイヤ１１の連続鋳造を行う。ここで、連続鋳造速度は、１００～３００ｍｍ／分、鋳造するワイヤ１１の直径は８～１２ｍｍ、長さは３００００～６００００ｍｍである。 In the casting process, the molten metal in the graphite crucible is transferred to a container provided with a water-cooled graphite die, and the molten metal is passed through the graphite die and drawn outside, thereby performing continuous casting of the wire 11. Here, the continuous casting speed is 100 to 300 mm / min, the diameter of the wire 11 to be cast is 8 to 12 mm, and the length is 30000 to 60000 mm.
強加工工程では、図３に示すように、屈曲角度Φが９０度である貫通孔１３が形成された、例えば直方体状の金型１４を使用して、金型１４の上部に設けられた貫通孔１３の一側開口部１５からワイヤ１１を押し込み、金型１４の側部に設けられた貫通孔１３の他側開口部１６から排出させること（ＥＣＡＰ（Ｅｑｕａｌ－Ｃｈａｎｎｅｌ　Ａｎｇｕｌａｒ　Ｐｒｅｓｓｉｎｇ）法）を繰り返して、ワイヤ１１に強加工を施す。ここで、一側開口部１５の内径に対して、他側開口部１６の内径は小さく設定されている（例えば、開口部断面積減少率で１％以上２０％以下）。このため、強加工の前後（一回の加工前後と同じ）で、ワイヤ１１の断面積減少率は、１％以上２０％以下となる。 In the strong processing step, as shown in FIG. 3, for example, a rectangular parallelepiped mold 14 in which a through hole 13 having a bending angle Φ of 90 degrees is formed is used to penetrate the mold 14. The wire 11 is pushed from one side opening 15 of the hole 13 and discharged from the other side opening 16 of the through hole 13 provided in the side of the mold 14 (ECAP (Equal-Channel Angular Pressing) method). Then, the wire 11 is strongly processed. Here, the inner diameter of the other-side opening 16 is set smaller than the inner diameter of the one-side opening 15 (for example, the opening cross-sectional area reduction rate is 1% or more and 20% or less). For this reason, the cross-sectional area reduction rate of the wire 11 is 1% or more and 20% or less before and after strong processing (same as before and after one processing).
ここで、ワイヤ１１の貫通孔１３（一側開口部１５）への押し込みは、図４（Ａ）～（Ｄ）に示すように、貫通孔１３の一側開口部１５の前方（上方）に配置され、一側開口部１５の上方にあるワイヤ１１の側部を両側から押圧保持して加工する対となる押圧部１７、１８を有する把持手段１９を用いて行う。
即ち、図４（Ａ）に示すように、一側開口部１５の中心軸位置とワイヤ１１の中心軸位置を一致させて、ワイヤ１１の下端が貫通孔１３の一側開口部１５の直上に配置される。次いで、貫通孔１３の一側開口部１５の上方に位置するワイヤ１１の側部の両側を、把持手段１９の図示しない押圧駆動部を操作して、上端位置に配置されている押圧部１７、１８でそれぞれ押圧して保持し、図４（Ｂ）に示すように、ワイヤ１１の側部を保持している状態の押圧部１７、１８を、把持手段１９の図示しない昇降駆動部を操作して下方に移動させる。これに伴って、ワイヤ１１の一側開口部１５の上方に位置する部分が、押圧部１７、１８の下降と共に一側開口部１５から貫通孔１３内に圧入される。 Here, the wire 11 is pushed into the through hole 13 (one side opening 15) in front of (above) the one side opening 15 of the through hole 13, as shown in FIGS. This is performed by using a gripping means 19 having a pair of pressing portions 17 and 18 that are arranged and pressed and processed from both sides of the side of the wire 11 above the one side opening 15.
That is, as shown in FIG. 4A, the central axis position of the one-side opening 15 and the central axis position of the wire 11 are matched, and the lower end of the wire 11 is directly above the one-side opening 15 of the through-hole 13. Be placed. Next, by operating a pressing drive unit (not shown) of the gripping means 19 on both sides of the side portion of the wire 11 located above the one side opening 15 of the through hole 13, the pressing unit 17 disposed at the upper end position, 18, and presses and holds the pressing portions 17 and 18 in the state of holding the side portion of the wire 11 as shown in FIG. And move it down. Along with this, the portion located above the one side opening 15 of the wire 11 is press-fitted into the through-hole 13 from the one side opening 15 as the pressing parts 17 and 18 are lowered.
続いて、図４（Ｃ）に示すように、押圧部１７、１８が下端位置に達した時点で、ワイヤ１１の貫通孔１３への圧入が停止する。押圧部１７、１８が下端位置に達すると、押圧駆動部を操作して、押圧部１７、１８によるワイヤ１１の保持状態を解除し、図４（Ｄ）に示すように、ワイヤ１１から離脱した押圧部１７、１８は、昇降駆動部を操作して上端位置まで移動させる。これによって、押圧部１７、１８は、ワイヤ１１の側部を両側から押圧する動作を開始する待機状態となる。そして、図４（Ａ）～（Ｄ）に示す動作を繰り返すことにより、貫通孔１３の一側開口部１５からワイヤ１１を順次押し込むことができ、ワイヤ１１が長尺になっても、ワイヤ１１の強加工を連続して容易に行うことができる。 Subsequently, as shown in FIG. 4C, when the pressing portions 17 and 18 reach the lower end position, the press-fitting of the wire 11 into the through hole 13 is stopped. When the pressing portions 17 and 18 reach the lower end position, the pressing driving portion is operated to release the holding state of the wire 11 by the pressing portions 17 and 18 and the wire 11 is detached from the wire 11 as shown in FIG. The pressing parts 17 and 18 are moved to the upper end position by operating the elevating drive part. Thereby, the pressing parts 17 and 18 will be in the standby state which starts the operation | movement which presses the side part of the wire 11 from both sides. Then, by repeating the operations shown in FIGS. 4A to 4D, the wires 11 can be sequentially pushed in from the one side opening 15 of the through-hole 13, and even if the wire 11 becomes long, the wire 11 Can be easily performed continuously.
なお、ワイヤ１１の貫通孔１３への押し込みが進行し、貫通孔１３の一側開口部１５の上方に位置するワイヤ１１の長さが短くなると、ダミーワイヤをワイヤ１１の終端に当接し、把持手段１９を用いてダミーワイヤを貫通孔１３に圧入する。これによって、ダミーワイヤにより、ワイヤ１１を押し出すことができ、貫通孔１３の他側開口部１６から、ワイヤ１１を取り出すことができる。 When the wire 11 is pushed into the through-hole 13 and the length of the wire 11 located above the one-side opening 15 of the through-hole 13 is shortened, the dummy wire comes into contact with the terminal end of the wire 11 and is gripped. A dummy wire is press-fitted into the through hole 13 using the means 19. Thereby, the wire 11 can be pushed out by the dummy wire, and the wire 11 can be taken out from the other opening 16 of the through hole 13.
図３に示す貫通孔１３の一側開口部１５からワイヤ１１を入れて、他側開口部１６から強制的に押し出すと、ワイヤ１１が屈曲部（弧の角度がΨとなるコーナ部）を通過する際、せん断ひずみが導入される。なお、一側開口部１５の内径に対して、他側開口部１６の内径は小さく設定されているので、強加工後のワイヤ１１は縮径しており、強加工後のワイヤ１１を再度一側開口部１５に装入することが容易にでき、ワイヤ１１の強加工を繰り返し行うことが容易にできる。
そして、ワイヤ１１が貫通孔１３を通過した回数をＮとすると、ワイヤ１１に導入された累積相当ひずみεＮは、次式で近似することができる。
εＮ＝（Ｎ／３１／２）・（Ｐ＋Ｑ）
ここで、Ｐ＝２ｃｏｔ｛（Φ／２）＋（Ψ／２）｝、Ｑ＝Ψｃｏｓｅｃ｛（Φ／２）＋（Ψ／２）｝である。 When the wire 11 is inserted from the one side opening 15 of the through hole 13 shown in FIG. 3 and forcibly pushed out from the other side opening 16, the wire 11 passes through a bent portion (a corner portion where the arc angle is Ψ). In doing so, shear strain is introduced. Since the inner diameter of the other-side opening 16 is set to be smaller than the inner diameter of the one-side opening 15, the wire 11 after the strong processing is reduced in diameter, and the wire 11 after the strong processing is again connected to the one-side opening 15. The side opening 15 can be easily inserted, and the wire 11 can be easily subjected to repeated strong processing.
When the number of times that the wire 11 has passed through the through hole 13 is N, the cumulative equivalent strain ε N introduced into the wire 11 can be approximated by the following equation.
ε N = (N / 3 1/2 ) · (P + Q)
Here, P = 2cot {(Φ / 2) + (ψ / 2)}, Q = ψcosec {(Φ / 2) + (ψ / 2)}.
ここで、貫通孔１３の屈曲角度Φ、貫通孔１３の屈曲部の弧の角度Ψに応じて、ワイヤ１１が貫通孔１３を１回通過した際の相当ひずみε１は、０．５～１となる。例えば、貫通孔１３の屈曲角度Φが９０度以上の場合、ワイヤ１１が貫通孔１３を１回通過した際の相当ひずみε１は、屈曲部の弧の角度Ψにあまり影響されないことが確認されているので、屈曲角度Φが９０度では、Ｐ＋Ｑを１と近似できる。このため、貫通孔１３をＮ回通過したワイヤ１１の累積相当ひずみεＮは、（Ｎ／３１／２）として計算できる（なお、１回、即ちＮ＝１の強加工で導入される相当ひずみは０．５８となる）。従って、ワイヤ１１が貫通孔１３を通過する回数Ｎを決めることで、ワイヤ１１の累積相当ひずみεＮを定量的に容易に評価することができると共に、ワイヤ１１の累積相当ひずみεＮを正確に調整することができる。そして、ワイヤ１１の累積相当ひずみを４以上にする場合、貫通孔１３を通過させる回数Ｎは、７回以上となる。 Here, according to the bending angle Φ of the through-hole 13 and the arc angle Ψ of the bent portion of the through-hole 13, the equivalent strain ε 1 when the wire 11 passes through the through-hole 13 once is 0.5 to 1 It becomes. For example, when the bending angle Φ of the through hole 13 is 90 degrees or more, it is confirmed that the equivalent strain ε 1 when the wire 11 passes through the through hole 13 once is not significantly affected by the arc angle Ψ of the bent portion. Therefore, when the bending angle Φ is 90 degrees, P + Q can be approximated to 1. For this reason, the cumulative equivalent strain ε N of the wire 11 that has passed through the through-hole 13 N times can be calculated as (N / 3 1/2 ) (note that it is equivalent to being introduced once, that is, with N = 1 strong processing. The strain is 0.58). Therefore, by determining the number of times N that the wire 11 passes through the through-hole 13, it is possible to quantitatively easily evaluate the cumulative equivalent strain epsilon N of wires 11, the cumulative equivalent strain epsilon N of the wire 11 accurately Can be adjusted. When the cumulative equivalent strain of the wire 11 is 4 or more, the number N of times of passing through the through hole 13 is 7 or more.
図５に、変形例に係る把持手段２０を示す。
把持手段２０は、金型１４の上部に形成された貫通孔１３の一側開口部１５の前方（上方）にあるワイヤ１１の側面の上下方向の異なる高さ位置にある外周部の周方向の異なる角度位置（例えば、周方向を４等分する角度位置）でそれぞれ当接して、ワイヤ１１の一側開口部１５の上方にある領域を、一側開口部１５に対して立設状態で支持するガイド部材２１を備えた上、下保持部２２、２３を有している。更に、把持手段２０は、上、下保持部２２、２３の間にあって、上下方向に並べて設けられ、ワイヤ１１の上、下保持部２２、２３の間にある側面の異なる高さ位置にある外周部の対向する部位を、それぞれ半径方向外側から押圧しながら回転して、ワイヤ１１を下方に送り出すそれぞれ対となるロール２４、２５をそれぞれ備えた上、下駆動部２６、２７とを有している。なお、図５では、上駆動部２６の対となるロール２４の軸心方向と、下駆動部２７の対となるロール２５の軸心方向は交差（例えば直交）している。 FIG. 5 shows a gripping means 20 according to a modification.
The gripping means 20 is provided in the circumferential direction of the outer peripheral portion at different height positions in the vertical direction of the side surface of the wire 11 located in front (upward) of the one side opening 15 of the through-hole 13 formed in the upper portion of the mold 14. Abutting at different angular positions (for example, angular positions that divide the circumferential direction into four equal parts), the region above the one side opening 15 of the wire 11 is supported in a standing state with respect to the one side opening 15. An upper holding portion 22 and 23 are provided. Further, the gripping means 20 is provided between the upper and lower holding portions 22 and 23 and arranged side by side in the vertical direction, and the outer periphery at different height positions on the side surfaces between the upper and lower holding portions 22 and 23 of the wire 11. Each of which is provided with a pair of rolls 24 and 25 that respectively feed the wire 11 downward by rotating while pressing the opposing portions of each part from the outside in the radial direction, and having lower drive parts 26 and 27, respectively. Yes. In FIG. 5, the axial center direction of the roll 24 serving as the pair of the upper drive unit 26 and the axial center direction of the roll 25 serving as the pair of the lower drive unit 27 intersect (for example, orthogonal).
把持手段２０を用いてワイヤ１１を貫通孔１３に押し込む場合、先ず、上保持部２２によりワイヤ１１の先側を支持させながら、ワイヤ１１の先端の外周部に上駆動部２６の対となるロール２４に接触させて、上、下駆動部２６、２７のロール２４、２５を回転させる。これによりワイヤ１１は下方に移動し、下駆動部２７の対となるロール２５間を通過して、ワイヤ１１の先側が下保持部２３で支持され、ワイヤ１１の中心軸位置が貫通孔１３の一側開口部１５の中心軸位置と一致した状態で、ワイヤ１１の下端が貫通孔１３の一側開口部１５の直上に配置される。 When the wire 11 is pushed into the through-hole 13 using the gripping means 20, first, a roll serving as a pair of the upper drive unit 26 on the outer peripheral portion of the tip of the wire 11 while supporting the tip side of the wire 11 by the upper holding unit 22. 24, the rolls 24 and 25 of the upper and lower drive units 26 and 27 are rotated. As a result, the wire 11 moves downward, passes between the pair of rolls 25 of the lower drive unit 27, the front side of the wire 11 is supported by the lower holding unit 23, and the central axis position of the wire 11 is the through hole 13. The lower end of the wire 11 is disposed immediately above the one-side opening 15 of the through hole 13 in a state where it coincides with the central axis position of the one-side opening 15.
そして、上、下駆動部２６、２７のロール２４、２５が回転することにより、ワイヤ１１の先側は徐々に貫通孔１３内に押し込まれ、時間が経過すると、ワイヤ１１の先側は、貫通孔１３の他側開口部１６から突出する。
なお、ワイヤ１１の貫通孔１３への押し込みが進行し、貫通孔１３の一側開口部１５の上方に位置するワイヤ１１の長さが短くなると、上、下駆動部２６、２７のロール２４、２５による押し込みができなくなるので、ワイヤ１１の終端にダミーワイヤの先端を当接させ、上、下駆動部２６、２７のロール２４、２５でダミーワイヤを下方に移動させる。これにより、ワイヤ１１がダミーワイヤにより押し出されることになって、ワイヤ１１は貫通孔１３を通過することができる。 Then, as the rolls 24 and 25 of the upper and lower drive units 26 and 27 are rotated, the front side of the wire 11 is gradually pushed into the through-hole 13. It protrudes from the other side opening 16 of the hole 13.
When the wire 11 is pushed into the through-hole 13 and the length of the wire 11 located above the one-side opening 15 of the through-hole 13 is shortened, the rolls 24 of the upper and lower drive units 26 and 27, Therefore, the tip of the dummy wire is brought into contact with the terminal end of the wire 11, and the dummy wire is moved downward by the rolls 24 and 25 of the upper and lower drive units 26 and 27. As a result, the wire 11 is pushed out by the dummy wire, and the wire 11 can pass through the through hole 13.
伸線加工は、ワイヤ１１を縮径して細線とする前伸線処理（粗引き）と、細線から素線を形成する仕上げ伸線処理とを有している。
ここで、前伸線処理は、例えばスエージング機を用いて、ワイヤ１１の断面積減少率が５～３０％となる範囲で行う。ワイヤ１１の断面積減少率を５～３０％の範囲としたのは、断面積減少率が５％未満では、細線から素線を形成する仕上げ伸線処理の負担が高くなって、素線の断線や表面荒れが生じるため好ましくない。一方、断面積減少率が３０％を超えると細線の径が細すぎて取扱が困難になり、生産性（素線の形成速度）が低下するため好ましくない。 The drawing process includes a pre-drawing process (rough drawing) in which the wire 11 is reduced in diameter to be a fine line, and a finish drawing process in which a strand is formed from the thin line.
Here, the pre-drawing process is performed in a range in which the cross-sectional area reduction rate of the wire 11 is 5 to 30% using, for example, a swaging machine. The reason why the cross-sectional area reduction rate of the wire 11 is in the range of 5 to 30% is that when the cross-sectional area reduction rate is less than 5%, the burden of the finish drawing process for forming the wire from the thin wire becomes high. Since disconnection and surface roughness occur, it is not preferable. On the other hand, if the cross-sectional area reduction rate exceeds 30%, the diameter of the thin wire is too thin and handling becomes difficult, and the productivity (wire forming speed) decreases, which is not preferable.
そして、前伸線処理は、強加工が施されたワイヤ１１を事前加熱した後に行ってもよい。ここで、事前加熱の温度は、強加工が行われたワイヤ１１の有する再結晶温度より２０～１００℃低い温度の不活性ガス雰囲気中で１～５０時間の範囲で行う。これによって、伸線加工を行う前のワイヤ１１の結晶組織の粒成長を抑制しながら再結晶化を促進して、結晶組織を微細化することができると共に、ワイヤ１１の加工性（変形性）を向上させることができる。 The pre-drawing process may be performed after pre-heating the wire 11 that has been subjected to strong processing. Here, the preheating temperature is in the range of 1 to 50 hours in an inert gas atmosphere at a temperature 20 to 100 ° C. lower than the recrystallization temperature of the wire 11 that has been strongly processed. As a result, recrystallization can be promoted while suppressing grain growth of the crystal structure of the wire 11 before wire drawing, and the crystal structure can be refined, and the workability (deformability) of the wire 11 can be reduced. Can be improved.
細線から素線を形成する仕上げ伸線処理は、細線を、例えば、冷媒（例えば油）で冷却した伸線ダイス内を通過させることにより行う。なお、細線から素線が形成される際の加工度は３～１１の範囲とする。ここで、加工度は、細線の断面積をＳ０、素線の断面積をＳ１とした場合、ｌｎ(Ｓ０／Ｓ１)で計算される値である。
そして、加工度を３～１１の範囲とすることにより、ワイヤ１１から細線を経由して素線が形成される過程における結晶粒１２の再結晶による結晶組織の微細化と、ワイヤ１１から細線を経由して素線が形成される過程における結晶粒１２の伸線方向に直交する方向に沿った部位の最大長さが減少する反作用に伴う結晶粒１２の伸線方向に沿った部位の最大長さの増加を競合させて、結晶粒１２が伸線方向に成長することを抑制することができる。その結果、素線を形成している結晶組織を構成する結晶粒１２の長手方向（伸線加工時の伸線方向）の平均粒径Ｂを１０μm以下、長手方向（伸線方向）に直交する方向の平均粒径Ａを２μｍ以下にすることができる。 The finish wire drawing process for forming the wire from the fine wire is performed by passing the fine wire through a wire drawing die cooled with a coolant (for example, oil), for example. It should be noted that the degree of processing when forming a strand from a thin wire is in the range of 3-11. Here, the degree of processing is a value calculated by ln (S 0 / S 1 ), where S 0 is the cross-sectional area of the thin wire and S 1 is the cross-sectional area of the strand.
Then, by setting the degree of processing in the range of 3 to 11, the crystal structure is refined by recrystallization of the crystal grains 12 in the process of forming the strands from the wires 11 via the fine wires, and the fine wires from the wires 11 are reduced. The maximum length of the portion along the drawing direction of the crystal grain 12 due to the reaction that the maximum length of the portion along the direction orthogonal to the drawing direction of the crystal grain 12 in the process of forming the strand via It is possible to prevent the crystal grains 12 from growing in the wire drawing direction by competing with the increase in thickness. As a result, the average grain size B in the longitudinal direction (drawing direction during wire drawing) of the crystal grains 12 constituting the crystal structure forming the strands is 10 μm or less and orthogonal to the longitudinal direction (drawing direction). The average particle size A in the direction can be 2 μm or less.
仕上げ伸線処理は、細線を、細線の有する再結晶温度より１０～７０℃低い温度で加熱する細線加熱を行った後に行ってもよい。細線加熱を行うことにより、細線を構成している結晶粒の再結晶化を促進して、結晶粒１２の微細化を図ると共に、結晶粒内に導入されたひずみを除去して、細線から素線が形成される際に必要な細線の伸び性（伸線性）を向上させることができる。ここで、細線加熱の温度を再結晶温度より７０℃を超えて低く設定すると、再結晶化が促進されず、細線内のひずみ除去が不十分になって細線の伸び性を向上させることができない。一方、細線加熱の温度を、再結晶温度－１０℃の温度を超えて高く設定すると、細線を構成している結晶組織では、再結晶化と共に粒成長が発生して好ましくない。 The finish wire drawing treatment may be performed after performing fine wire heating in which the fine wire is heated at a temperature 10 to 70 ° C. lower than the recrystallization temperature of the fine wire. By performing the fine wire heating, the recrystallization of the crystal grains constituting the fine lines is promoted, the crystal grains 12 are refined, and the strain introduced into the crystal grains is removed, and the fine lines are removed. It is possible to improve the extensibility (drawing property) of a fine wire required when a wire is formed. Here, if the temperature of the fine wire heating is set lower than the recrystallization temperature by more than 70 ° C., the recrystallization is not promoted, the strain removal in the fine wire is insufficient, and the extensibility of the fine wire cannot be improved. . On the other hand, if the temperature of the fine wire heating is set higher than the recrystallization temperature of −10 ° C., the crystal structure constituting the fine wire is not preferable because grain growth occurs with recrystallization.
更に、形成した素線を、素線の有する再結晶温度より１０～７０℃低い温度で仕上げ加熱してもよい。これによって、素線を構成する結晶粒１２の再結晶を促進して、素線を形成している結晶組織を構成する結晶粒１２の長手方向（伸線方向）の平均粒径Ｂを１０μm以下、長手方向（伸線方向）に直交する方向の平均粒径Ａを２μｍ以下に効率的に調整することができる。
ここで、仕上げ加熱処理の温度を、ダイス伸線で形成された素線の有する再結晶温度より７０℃を超えて低く設定すると、再結晶化が促進されず、素線を構成する結晶組織の微細化が達成できない。一方、仕上げ加熱処理の温度を、再結晶温度－１０℃の温度を超えて高く設定すると、素線を構成している結晶組織では、再結晶化と共に粒成長が発生して（即ち、結晶組織の均一性は低下して）好ましくない。 Further, the formed wire may be finish-heated at a temperature 10 to 70 ° C. lower than the recrystallization temperature of the wire. Thereby, recrystallization of the crystal grains 12 constituting the strands is promoted, and the average grain size B in the longitudinal direction (drawing direction) of the crystal grains 12 constituting the crystal structure forming the strands is 10 μm or less. The average particle diameter A in the direction orthogonal to the longitudinal direction (drawing direction) can be efficiently adjusted to 2 μm or less.
Here, when the temperature of the finish heat treatment is set to be lower than the recrystallization temperature of the strand formed by die drawing by more than 70 ° C., the recrystallization is not promoted and the crystalline structure constituting the strand is not increased. Miniaturization cannot be achieved. On the other hand, if the temperature of the finish heat treatment is set higher than the recrystallization temperature of −10 ° C., the crystal structure constituting the strand causes grain growth along with recrystallization (that is, the crystal structure). Is not preferable).
なお、強加工の方法として、ＥＣＡＰ法の他にＨＰＴ（Ｈｉｇｈ－Ｐｒｅｓｓｕｒｅ　Ｔｏｒｓｉｏｎ）法を使用することもできる。ＨＰＴ法では、リング形状の強加工された素材が得られる。
更に、強加工の方法として、ＡＲＢ（Ａｃｃｕｍｕｌａｔｉｖｅ　Ｒｏｌｌ　Ｂｏｎｄｉｎｇ）法を使用することもできる。ＡＲＢ法では、積層加工体から、機械切削等によりワイヤを切り出すことにより、強加工された素材を作製することができる。 In addition to the ECAP method, an HPT (High-Pressure Torsion) method can also be used as a strong processing method. In the HPT method, a ring-shaped strongly processed material is obtained.
Furthermore, an ARB (Accumulative Roll Bonding) method can also be used as a method of strong processing. In the ARB method, a strongly processed material can be produced by cutting a wire from a laminated processed body by mechanical cutting or the like.
本発明の第２の実施例に係る微結晶金属導体は、ワイヤから線径が５０～１２０μｍの素線を形成する伸線加工（強加工の一例）時に、４以上の累積相当ひずみを導入することにより得られるもので、長手方向（伸線加工時の伸線方向）の平均粒径が０．３μｍ以上１０μｍ以下で、長手方向（伸線方向）に直交する方向の平均粒径が０．３μｍ以上２μｍ以下である結晶粒から構成される結晶組織、即ち、長手方向に伸びる粗大な繊維状結晶が含まれず、等方性に優れた微細な結晶組織を有している。このため、第２の実施例に係る微結晶金属導体は、繰り返し変形が加わっても結晶組織内にひずみの局在化が生じ難く、脆化が誘起され難い。その結果、疲労き裂の発生が抑制でき、耐疲労特性（耐屈曲性能）の向上を図ることができる。 The microcrystalline metal conductor according to the second embodiment of the present invention introduces a cumulative equivalent strain of 4 or more at the time of wire drawing (an example of strong processing) for forming a strand having a wire diameter of 50 to 120 μm from a wire. The average particle size in the longitudinal direction (drawing direction during drawing) is 0.3 μm or more and 10 μm or less, and the average particle size in the direction perpendicular to the longitudinal direction (drawing direction) is 0. It has a crystal structure composed of crystal grains of 3 μm or more and 2 μm or less, that is, does not include coarse fibrous crystals extending in the longitudinal direction, and has a fine crystal structure excellent in isotropic properties. For this reason, in the microcrystalline metal conductor according to the second embodiment, strain localization is difficult to occur in the crystal structure even when repeated deformation is applied, and embrittlement is difficult to be induced. As a result, generation of fatigue cracks can be suppressed, and fatigue resistance characteristics (bending resistance) can be improved.
また、第２の実施例に係る微結晶金属導体の製造方法は、微結晶金属導体の原料（金属）を溶融する溶融工程と、溶融した金属から所定形状、例えば、外径が６～１０ｍｍのワイヤを製造する鋳造工程と、ワイヤに累積相当ひずみが４以上となる強加工を行って線径が５０～１２０μｍの素線を形成する伸線加工工程とを有している。そして、伸線加工工程において、ワイヤの結晶組織に累積相当ひずみ４以上の強加工を行いながら素線を形成すると、強加工に伴って、ワイヤの結晶組織を構成している結晶粒の微細化と、ワイヤから素線が形成される過程における結晶粒の伸線方向に直交する方向に沿った部位の長さが減少する反作用に伴う結晶粒の伸線方向に沿った部位の長さの増加が競合して、結晶粒が伸線方向に成長することが抑制され、素線の結晶組織は、長手方向（伸線加工時の伸線方向）の平均粒径が０．３～１０μm、長手方向（伸線方向）に直交する方向の平均粒径が０．３～２μｍの結晶粒から構成されるようになる。 Further, the method for producing a microcrystalline metal conductor according to the second embodiment includes a melting step of melting a raw material (metal) of the microcrystalline metal conductor, and a predetermined shape, for example, an outer diameter of 6 to 10 mm, from the molten metal. A casting process for manufacturing the wire, and a wire drawing process for forming a strand having a wire diameter of 50 to 120 μm by performing a strong process with a cumulative equivalent strain of 4 or more on the wire. Then, in the wire drawing process, when a wire is formed while performing strong processing with a cumulative equivalent strain of 4 or more on the crystal structure of the wire, refinement of the crystal grains constituting the crystal structure of the wire accompanying the strong processing And the increase in the length of the portion along the drawing direction of the crystal grain due to the reaction that the length of the portion along the direction orthogonal to the drawing direction of the crystal grain decreases in the process of forming the strand from the wire And the crystal grains are restrained from growing in the wire drawing direction. The crystal structure of the strands is 0.3 to 10 μm in average length in the longitudinal direction (drawing direction during wire drawing) It is composed of crystal grains having an average grain size in the direction orthogonal to the direction (drawing direction) of 0.3 to 2 μm.
次に、本発明の作用効果を確認するために行った実験例について、以下に説明する。
（実験例１～４）
グラファイトルツボ内に純度が９９．９５質量％のアルミニウムを所定量投入し、高周波誘導加熱により７２０℃で撹拌溶融した（以上、溶融工程）。そして、得られた溶融金属をグラファイトダイスが設けられた容器に移し、水冷したグラファイトダイスを介して、約３００ｍｍ／分の鋳造速度で直径が１０ｍｍ、長さが１００ｍｍのワイヤを連続鋳造した（以上、鋳造工程）。 Next, experimental examples conducted for confirming the effects of the present invention will be described below.
(Experimental Examples 1 to 4)
A predetermined amount of 99.95% by mass of aluminum was put into a graphite crucible and stirred and melted at 720 ° C. by high-frequency induction heating (the melting step). Then, the obtained molten metal was transferred to a vessel provided with a graphite die, and a wire having a diameter of 10 mm and a length of 100 mm was continuously cast at a casting speed of about 300 mm / min through a water-cooled graphite die (above) Casting process).
次いで、一側開口部の内径が１０ｍｍ、他側開口部の内径が９．８ｍｍで９０度屈曲する貫通孔が形成された金型をプレス機に取り付け、金型に形成された一側開口部から、ワイヤを約２００ｍｍ／分の押し込み速度で押し込み、金型の他側開口部から排出させるＥＣＡＰ法による強加工を室温で３、５、７、及び９回それぞれ繰り返し、ワイヤに１．７、２．９、４．０、及び５．２の累積相当ひずみを導入した。なお、強加工を行う場合、ワイヤの表面には、無機系潤滑剤（例えば、二硫化モリブデン）を塗布した（以上、強加工工程）。 Next, a die having an inner diameter of 10 mm on one side and an inner diameter of 9.8 mm on the other side and having a through hole bent at 90 degrees is attached to a press, and the one side opening formed in the die From the above, strong processing by the ECAP method of pushing the wire at a pushing speed of about 200 mm / min and discharging it from the other side opening of the mold is repeated 3, 5, 7, and 9 times at room temperature, respectively. Cumulative equivalent strains of 2.9, 4.0, and 5.2 were introduced. In addition, when performing strong processing, the inorganic lubricant (for example, molybdenum disulfide) was apply | coated to the surface of the wire (above, a strong processing process).
強加工が施された直径９．８ｍｍのワイヤから採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より５０℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の事前加熱を行った。そして、事前加熱後のワイヤを、スエージング機を用いて直径８．４ｍｍ（断面積減少率２９％）の細線を成形した（前伸線処理）。続いて、細線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の細線加熱を行った。そして、細線加熱を行った細線を、水冷した伸線ダイス内を３００ｍｍ／分の引き抜き速度で通過させて、直径が８０μｍ（加工度９．３）の素線に成形した（仕上げ伸線処理）。次いで、素線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で４時間の仕上げ加熱を行って素線を得た（以上、伸線加工工程）。 A recrystallization temperature is measured using a test piece taken from a 9.8 mm diameter wire that has been subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere Preheating was performed for 2 hours in (an example of an inert gas atmosphere). And the wire after a preheating shape | molded the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) using the swaging machine (pre-drawing process). Subsequently, the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature 40 ° C. lower than the obtained recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 300 mm / min and formed into a strand having a diameter of 80 μm (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Inside was subjected to finishing heating for 4 hours to obtain a strand (drawing step).
素線の結晶組織の観察から、結晶組織を構成している結晶粒の伸線方向に直交する方向の平均粒径Ａは２μｍであり、結晶粒の伸線方向の平均粒径Ｂは、累積相当ひずみが１．７では２０μｍ、累積相当ひずみが２．９では１５μｍ、累積相当ひずみが４．０では１０μｍ、累積相当ひずみが５．２では２μｍであった。
そして、得られた素線の導電率を測定し、素線から断面積が０．２ｍｍ２のケーブルを作製して常温でケーブル屈曲試験を行ってケーブル破断回数を求めた。なお、ケーブル屈曲試験では、ケーブルに荷重１００ｇを負荷した状態で、曲げ半径が１５ｍｍ、折り曲げ角度範囲が±９０度の左右繰り返し曲げを加えた。導電率の値及びケーブル破断回数を表１に示す。また、結晶粒の伸線方向の平均粒径Ｂとケーブル破断回数の関係を図６に示す。 From the observation of the crystal structure of the strand, the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 μm, and the average particle diameter B in the drawing direction of the crystal grains is cumulative. When the equivalent strain was 1.7, it was 20 μm, when the cumulative equivalent strain was 2.9, it was 15 μm, when the cumulative equivalent strain was 4.0, it was 10 μm, and when the cumulative equivalent strain was 5.2, it was 2 μm.
And the electrical conductivity of the obtained strand was measured, the cable whose cross-sectional area is 0.2 mm < 2 > was produced from the strand, and the cable bending test was performed at normal temperature, and the frequency | count of cable breakage was calculated | required. In the cable bending test, left and right repeated bending with a bending radius of 15 mm and a bending angle range of ± 90 degrees was applied with a load of 100 g applied to the cable. Table 1 shows the conductivity values and the number of cable breaks. FIG. 6 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
（実験例５～８）
実験例１～４と同様の方法で直径が１０ｍｍ、長さが１００ｍｍのワイヤを作製した。そして、実験例１～４と同様にＥＣＡＰ法による強加工を室温で行って、得られたワイヤに１．７、２．９、４．０、及び５．２の累積相当ひずみを導入した。
次いで、強加工が施された直径９．８ｍｍのワイヤから採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より５０℃低い温度を加熱温度に設定して、窒素ガス雰囲気中で２時間の事前加熱を行った。そして、事前加熱後のワイヤを、スエージング機を用いて直径８．４ｍｍ（断面積減少率２９％）の細線を成形した（前伸線処理）。続いて、細線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気中で２時間の細線加熱を行った。そして、細線加熱を行った細線を、水冷した伸線ダイス内を３００ｍｍ／分の引き抜き速度で通過させて、直径が８０μｍ（加工度９．３）の素線に成形した（仕上げ伸線処理）。そして、素線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気中で１時間の仕上げ加熱を行って素線を得た。 (Experimental Examples 5 to 8)
A wire having a diameter of 10 mm and a length of 100 mm was produced in the same manner as in Experimental Examples 1 to 4. Then, as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and cumulative equivalent strains of 1.7, 2.9, 4.0, and 5.2 were introduced into the obtained wires.
Next, the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heating temperature. Preheating was performed in a gas atmosphere for 2 hours. And the wire after a preheating shape | molded the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) using the swaging machine (pre-drawing process). Subsequently, the recrystallization temperature is measured using a test piece taken from the fine wire, the temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and the fine wire heating is performed for 2 hours in the nitrogen gas atmosphere. went. Then, the fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 300 mm / min and formed into a strand having a diameter of 80 μm (working degree 9.3) (finish wire drawing process). . Then, the recrystallization temperature is measured using a test piece taken from the strand, and the temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and finish heating is performed for 1 hour in a nitrogen gas atmosphere. I went to get a strand.
素線の結晶組織の観察から、結晶組織を構成している結晶粒の伸線方向に直交する方向の平均粒径Ａは０．５μｍであり、結晶粒の伸線方向の平均粒径Ｂは、累積相当ひずみが１．７では２０μｍ、累積相当ひずみが２．９では１５μｍ、累積相当ひずみが４．０では１０μｍ、累積相当ひずみが５．２では２μｍであった。そして、得られた素線の導電率を測定し、素線から断面積が０．２ｍｍ２のケーブルを作製して常温で実験例１～４と同様のケーブル屈曲試験を行ってケーブル破断回数を求めた。導電率の値及びケーブル破断回数を表１に示す。また、結晶粒の伸線方向の平均粒径Ｂとケーブル破断回数の関係を図６に示す。 From the observation of the crystal structure of the strand, the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 μm, and the average particle diameter B in the drawing direction of the crystal grains is When the cumulative equivalent strain was 1.7, it was 20 μm, when the cumulative equivalent strain was 2.9, it was 15 μm, when the cumulative equivalent strain was 4.0, it was 10 μm, and when the cumulative equivalent strain was 5.2, it was 2 μm. Then, the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 1 shows the conductivity values and the number of cable breaks. FIG. 6 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
（実験例９～１３）
グラファイトルツボ内に純度が９９．９５質量％のアルミニウムと純度が９９質量％のスカンジウムをそれぞれ所定量投入し、高周波誘導加熱により７２０℃で撹拌溶融して、アルミニウム－０．３質量％スカンジウム合金を溶製した（以上、溶融工程）。そして、得られた溶融金属をグラファイトダイスが設けられた容器に移し、水冷したグラファイトダイスを介して、約３００ｍｍ／分の鋳造速度で直径が１０ｍｍ、長さが１００ｍｍのワイヤを連続鋳造した（以上、鋳造工程）。 (Experimental Examples 9 to 13)
Predetermined amounts of aluminum having a purity of 99.95% by mass and scandium having a purity of 99% by mass are respectively charged into a graphite crucible and stirred and melted at 720 ° C. by high-frequency induction heating to obtain an aluminum-0.3% by mass scandium alloy. Melted (above, melting step). Then, the obtained molten metal was transferred to a vessel provided with a graphite die, and a wire having a diameter of 10 mm and a length of 100 mm was continuously cast at a casting speed of about 300 mm / min through a water-cooled graphite die (above) Casting process).
実験例１～４と同様にＥＣＡＰ法による強加工を室温で行って、得られたワイヤに１．７、２．９、４．０、４．６、及び５．２の累積相当ひずみを導入した（以上、強加工工程）。 As in Experimental Examples 1 to 4, strong processing by ECAP method was performed at room temperature, and cumulative equivalent strains of 1.7, 2.9, 4.0, 4.6, and 5.2 were introduced into the obtained wires. (Above, strong processing step).
次いで、強加工が施された直径９．８ｍｍのワイヤから採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より５０℃低い温度を熱処理温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の事前加熱を行った。そして、事前加熱後の直径１０ｍｍのワイヤを、スエージング機を用いて直径８．４ｍｍ（断面積減少率２９％）の細線を成形した（前伸線処理）。続いて、細線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の細線加熱を行った。そして、細線加熱を行った細線を、水冷した伸線ダイス内を５００ｍｍ／分の引き抜き速度で通過させて、直径が８０μｍ（加工度９．３）の素線に成形した（仕上げ伸線処理）。次いで、素線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で４時間の仕上げ加熱処理を行った（以上、伸線加工工程）。 Next, the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature. Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere). And the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape | molded for the wire of diameter 10mm after a pre-heating using the swaging machine (pre-drawing process). Subsequently, the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature 40 ° C. lower than the obtained recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. The fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 μm (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finishing heat treatment for 4 hours was performed in the inside (the wire drawing process).
素線の結晶組織の観察から、結晶組織を構成している結晶粒の伸線方向に直交する方向の平均粒径Ａは２μｍであり、結晶粒の伸線方向の平均粒径Ｂは、累積相当ひずみが１．７では２０μｍ、累積相当ひずみが２．９では１５μｍ、累積相当ひずみが４．０では１０μｍ、累積相当ひずみが４．６では６μｍ、累積相当ひずみが５．２では２μｍであった。そして、得られた素線の導電率を測定し、素線から断面積が０．２ｍｍ２のケーブルを作製して常温で実験例１～４と同様のケーブル屈曲試験を行ってケーブル破断回数を求めた。導電率の値及びケーブル破断回数を表２に示す。また、結晶粒の伸線方向の平均粒径Ｂとケーブル破断回数の関係を図７に示す。 From the observation of the crystal structure of the strand, the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 μm, and the average particle diameter B in the drawing direction of the crystal grains is cumulative. When the equivalent strain is 1.7, it is 20 μm, when the cumulative equivalent strain is 2.9, it is 15 μm, when the cumulative equivalent strain is 4.0, it is 10 μm, when the cumulative equivalent strain is 4.6, it is 6 μm, and when the cumulative equivalent strain is 5.2, it is 2 μm. It was. Then, the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 2 shows the conductivity values and the number of cable breaks. FIG. 7 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
（実験例１４～１８）
実験例９～１３と同様の方法で直径が１０ｍｍ、長さが１００ｍｍのワイヤを作製した。そして、実験例１～４と同様にＥＣＡＰ法による強加工を室温で行って、得られたワイヤに１．７、２．９、４．０、４．６、及び５．２の累積相当ひずみを導入した。 (Experimental Examples 14 to 18)
A wire having a diameter of 10 mm and a length of 100 mm was produced in the same manner as in Experimental Examples 9 to 13. In the same manner as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and the obtained wires had a cumulative equivalent strain of 1.7, 2.9, 4.0, 4.6, and 5.2. Was introduced.
次いで、強加工が施された直径９．８ｍｍの強加工が施されたワイヤから採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より５０℃低い温度を熱処理温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の事前加熱を行った。そして、事前加熱後の直径１０ｍｍのワイヤを、スエージング機を用いて直径８．４ｍｍ（断面積減少率２９％）の細線を成形した（前伸線処理）。続いて、細線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の細線加熱を行った。そして、細線加熱を行った細線を、水冷した伸線ダイス内を５００ｍｍ／分の引き抜き速度で通過させて、直径が８０μｍ（加工度９．３）の素線に成形した（仕上げ伸線処理）。次いで、素線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の仕上げ加熱処理を行った（以上、伸線加工工程）。 Next, the recrystallization temperature was measured using a test piece taken from a strongly processed wire having a diameter of 9.8 mm, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature. And preheating was performed for 2 hours in a nitrogen gas atmosphere (an example of an inert gas atmosphere). And the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape | molded for the wire of diameter 10mm after a pre-heating using the swaging machine (pre-drawing process). Subsequently, the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature 40 ° C. lower than the obtained recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. The fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 μm (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finishing heat treatment for 2 hours was performed in the inside (the wire drawing process).
素線の結晶組織の観察から、結晶組織を構成している結晶粒の伸線方向に直交する方向の平均粒径Ａは１μｍであり、結晶粒の伸線方向の平均粒径Ｂは、累積相当ひずみが１．７では２０μｍ、累積相当ひずみが２．９では１５μｍ、累積相当ひずみが４．０では１０μｍ、累積相当ひずみが４．６では６μｍ、累積相当ひずみが５．２では２μｍであった。そして、得られた素線の導電率を測定し、素線から断面積が０．２ｍｍ２のケーブルを作製して常温で実験例１～４と同様のケーブル屈曲試験を行ってケーブル破断回数を求めた。導電率の値及びケーブル破断回数を表２に示す。また、結晶粒の伸線方向の平均粒径Ｂとケーブル破断回数の関係を図７に示す。 From the observation of the crystal structure of the strand, the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 1 μm, and the average particle diameter B in the drawing direction of the crystal grains is cumulative. When the equivalent strain is 1.7, it is 20 μm, when the cumulative equivalent strain is 2.9, it is 15 μm, when the cumulative equivalent strain is 4.0, it is 10 μm, when the cumulative equivalent strain is 4.6, it is 6 μm, and when the cumulative equivalent strain is 5.2, it is 2 μm. It was. Then, the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 2 shows the conductivity values and the number of cable breaks. FIG. 7 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
（実験例１９～２３）
実験例９～１３と同様の方法で直径が１０ｍｍ、長さが１００ｍｍのワイヤを作製した。そして、実験例１～４と同様にＥＣＡＰ法による強加工を室温で行って、得られたワイヤに１．７、２．９、４．０、４．６、及び５．２の累積相当ひずみを導入した。 (Experimental Examples 19 to 23)
A wire having a diameter of 10 mm and a length of 100 mm was produced in the same manner as in Experimental Examples 9 to 13. In the same manner as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and the obtained wires had a cumulative equivalent strain of 1.7, 2.9, 4.0, 4.6, and 5.2. Was introduced.
次いで、強加工が施された直径９．８ｍｍのワイヤから採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より５０℃低い温度を熱処理温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の事前加熱を行った。そして、事前加熱後の直径１０ｍｍのワイヤを、スエージング機を用いて直径８．４ｍｍ（断面積減少率２９％）の細線を成形した（前伸線処理）。続いて、細線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の細線加熱を行った。そして、細線加熱を行った細線を、水冷した伸線ダイス内を５００ｍｍ／分の引き抜き速度で通過させて、直径が８０μｍ（加工度９．３）の素線に成形した（仕上げ伸線処理）。次いで、素線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で１時間の仕上げ加熱処理を行った（以上、伸線加工工程）。 Next, the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature. Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere). And the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape | molded for the wire of diameter 10mm after a pre-heating using the swaging machine (pre-drawing process). Subsequently, the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature 40 ° C. lower than the obtained recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. The fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 μm (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finish heat treatment for 1 hour was performed in the inside (the wire drawing process).
素線の結晶組織の観察から、結晶組織を構成している結晶粒の伸線方向に直交する方向の平均粒径Ａは０．５μｍであり、結晶粒の伸線方向の平均粒径Ｂは、累積相当ひずみが１．７では２０μｍ、累積相当ひずみが２．９では１５μｍ、累積相当ひずみが４．０では１０μｍ、累積相当ひずみが４．６では５μｍ、累積相当ひずみが５．２では２μｍであった。そして、得られた素線の導電率を測定し、素線から断面積が０．２ｍｍ２のケーブルを作製して常温で実験例１～４と同様のケーブル屈曲試験を行ってケーブル破断回数を求めた。導電率の値及びケーブル破断回数を表２に示す。また、結晶粒の伸線方向の平均粒径Ｂとケーブル破断回数の関係を図７に示す。 From the observation of the crystal structure of the strand, the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 μm, and the average particle diameter B in the drawing direction of the crystal grains is 20 μm when the cumulative equivalent strain is 1.7, 15 μm when the cumulative equivalent strain is 2.9, 10 μm when the cumulative equivalent strain is 4.0, 5 μm when the cumulative equivalent strain is 4.6, and 2 μm when the cumulative equivalent strain is 5.2. Met. Then, the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 2 shows the conductivity values and the number of cable breaks. FIG. 7 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
（実験例２４～２７）
グラファイトルツボ内に純度が９９．９５質量％のアルミニウム、純度が９９．９５質量％のマグネシウム、純度が９９．９９質量％のケイ素、純度が９９．９５質量％の鉄をそれぞれ所定量投入し、高周波誘導加熱により７２０℃で撹拌溶融して、アルミニウム－０．６質量％マグネシウム－０．３質量％ケイ素－０．０５質量％の鉄合金を溶製した（以上、溶融工程）。そして、得られた溶融金属をグラファイトダイスが設けられた容器に移し、水冷したグラファイトダイスを介して、約３００ｍｍ／分の鋳造速度で直径が１０ｍｍ、長さが１００ｍｍのワイヤを連続鋳造した（以上、鋳造工程）。 (Experimental Examples 24-27)
A predetermined amount of aluminum having a purity of 99.95% by mass, magnesium having a purity of 99.95% by mass, silicon having a purity of 99.99% by mass, and iron having a purity of 99.95% by mass is put into the graphite crucible, By stirring and melting at 720 ° C. by high frequency induction heating, an iron alloy of aluminum—0.6 mass% magnesium—0.3 mass% silicon—0.05 mass% was melted (the melting step). Then, the obtained molten metal was transferred to a vessel provided with a graphite die, and a wire having a diameter of 10 mm and a length of 100 mm was continuously cast at a casting speed of about 300 mm / min through a water-cooled graphite die (above) Casting process).
実験例１～４と同様にＥＣＡＰ法による強加工を室温で行って、得られたワイヤに１．７、２．９、４．０、及び５．２の累積相当ひずみを導入した（以上、強加工工程）。 In the same manner as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and cumulative equivalent strains of 1.7, 2.9, 4.0, and 5.2 were introduced into the obtained wires (above, Strong processing process).
次いで、強加工が施された直径９．８ｍｍのワイヤから採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より５０℃低い温度を熱処理温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の事前加熱を行った。そして、事前加熱後の直径１０ｍｍのワイヤを、スエージング機を用いて直径８．４ｍｍ（断面積減少率２９％）の細線を成形した（前伸線処理）。続いて、細線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の細線加熱を行った。そして、細線加熱を行った細線を、水冷した伸線ダイス内を５００ｍｍ／分の引き抜き速度で通過させて、直径が８０μｍ（加工度９．３）の素線に成形した（仕上げ伸線処理）。次いで、素線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４０℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で１時間の仕上げ加熱処理を行った（以上、伸線加工工程）。 Next, the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature. Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere). And the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape | molded for the wire of diameter 10mm after a pre-heating using the swaging machine (pre-drawing process). Subsequently, the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature 40 ° C. lower than the obtained recrystallization temperature is set as a heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. The fine wire heated was passed through a water-cooled wire drawing die at a drawing speed of 500 mm / min to form a strand having a diameter of 80 μm (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the wire, and a temperature lower by 40 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finish heat treatment for 1 hour was performed in the inside (the wire drawing process).
素線の結晶組織の観察から、結晶組織を構成している結晶粒の伸線方向に直交する方向の平均粒径Ａは０．５μｍであり、結晶粒の伸線方向の平均粒径Ｂは、累積相当ひずみが１．７では２０μｍ、累積相当ひずみが２．９では１５μｍ、累積相当ひずみが４．０では１０μｍ、累積相当ひずみが５．２では２μｍであった。そして、得られた素線の導電率を測定し、素線から断面積が０．２ｍｍ２のケーブルを作製して常温で実験例１～４と同様のケーブル屈曲試験を行ってケーブル破断回数を求めた。導電率の値及びケーブル破断回数を表３に示す。また、結晶粒の伸線方向の平均粒径Ｂとケーブル破断回数の関係を図６に示す。 From the observation of the crystal structure of the strand, the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 μm, and the average particle diameter B in the drawing direction of the crystal grains is When the cumulative equivalent strain was 1.7, it was 20 μm, when the cumulative equivalent strain was 2.9, it was 15 μm, when the cumulative equivalent strain was 4.0, it was 10 μm, and when the cumulative equivalent strain was 5.2, it was 2 μm. Then, the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 3 shows the conductivity values and the number of cable breaks. FIG. 6 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
（実験例２８～３１）
グラファイトルツボ内に純度が９９．９９質量％の銅を所定量投入し、高周波誘導加熱により１１５０℃で撹拌溶融した（以上、溶融工程）。そして、得られた溶融金属をグラファイトダイスが設けられた容器に移し、水冷したグラファイトダイスを介して、約３００ｍｍ／分の鋳造速度で直径が１０ｍｍ、長さが１００ｍｍのワイヤを連続鋳造した（以上、鋳造工程）。 (Experimental Examples 28-31)
A predetermined amount of 99.99% by mass of copper was put into a graphite crucible and stirred and melted at 1150 ° C. by high-frequency induction heating (the melting step). Then, the obtained molten metal was transferred to a vessel provided with a graphite die, and a wire having a diameter of 10 mm and a length of 100 mm was continuously cast at a casting speed of about 300 mm / min through a water-cooled graphite die (above) Casting process).
実験例１～４と同様にＥＣＡＰ法による強加工を室温で行って、得られたワイヤに１．７、２．９、４．０、及び５．２の累積相当ひずみを導入した（以上、強加工工程）。 In the same manner as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and cumulative equivalent strains of 1.7, 2.9, 4.0, and 5.2 were introduced into the obtained wires (above, Strong processing process).
次いで、強加工が施された直径９．８ｍｍの強加工が施されたワイヤから採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より５０℃低い温度を熱処理温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の事前加熱を行った。そして、事前加熱後の直径１０ｍｍのワイヤを、スエージング機を用いて直径８．４ｍｍ（断面積減少率２９％）の細線を成形した（前伸線処理）。続いて、細線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４５℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の細線加熱を行った。そして、細線加熱を行った細線を、水冷した伸線ダイス内を１５００ｍｍ／分の引き抜き速度で通過させて、直径が８０μｍ（加工度９．３）の素線に成形した（仕上げ伸線処理）。次いで、素線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４５℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で４時間の仕上げ加熱処理を行った（以上、伸線加工工程）。 Next, the recrystallization temperature was measured using a test piece taken from a strongly processed wire having a diameter of 9.8 mm, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature. And preheating was performed for 2 hours in a nitrogen gas atmosphere (an example of an inert gas atmosphere). And the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape | molded for the wire of diameter 10mm after a pre-heating using the swaging machine (pre-drawing process). Subsequently, the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the thin wire heated was passed through a water-cooled wire drawing die at a drawing speed of 1500 mm / min, and formed into a strand having a diameter of 80 μm (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the strand, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finishing heat treatment for 4 hours was performed in the inside (the wire drawing process).
素線の結晶組織の観察から、結晶組織を構成している結晶粒の伸線方向に直交する方向の平均粒径Ａは２μｍであり、結晶粒の伸線方向の平均粒径Ｂは、累積相当ひずみが１．７では２０μｍ、累積相当ひずみが２．９では１５μｍ、累積相当ひずみが４．０では１０μｍ、累積相当ひずみが５．２では２μｍであった。そして、得られた素線の導電率を測定し、素線から断面積が０．２ｍｍ２のケーブルを作製して常温で実験例１～４と同様のケーブル屈曲試験を行ってケーブル破断回数を求めた。導電率の値及びケーブル破断回数を表４に示す。また、結晶粒の伸線方向の平均粒径Ｂとケーブル破断回数の関係を図６に示す。 From the observation of the crystal structure of the strand, the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 μm, and the average particle diameter B in the drawing direction of the crystal grains is cumulative. When the equivalent strain was 1.7, it was 20 μm, when the cumulative equivalent strain was 2.9, it was 15 μm, when the cumulative equivalent strain was 4.0, it was 10 μm, and when the cumulative equivalent strain was 5.2, it was 2 μm. Then, the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 4 shows the conductivity values and the number of cable breaks. FIG. 6 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
Figure JPOXMLDOC01-appb-T000004
Figure JPOXMLDOC01-appb-T000004
（実験例３２～３５）
グラファイトルツボ内に純度が９９．９９質量％の銅と純度が９９．９５質量％の銀をそれぞれ所定量投入し、高周波誘導加熱により１１５０℃で撹拌溶融して、銅－５質量％銀合金を溶製した（以上、溶融工程）。そして、得られた溶融金属をグラファイトダイスが設けられた容器に移し、水冷したグラファイトダイスを介して、約３００ｍｍ／分の鋳造速度で直径が１０ｍｍ、長さが１００ｍｍのワイヤを連続鋳造した（以上、鋳造工程）。 (Experimental Examples 32 to 35)
A predetermined amount of 99.99% by mass of copper and 99.95% by mass of silver are put into a graphite crucible, respectively, and are stirred and melted at 1150 ° C. by high-frequency induction heating to obtain a copper-5% by mass silver alloy. Melted (above, melting step). Then, the obtained molten metal was transferred to a vessel provided with a graphite die, and a wire having a diameter of 10 mm and a length of 100 mm was continuously cast at a casting speed of about 300 mm / min through a water-cooled graphite die (above) Casting process).
実験例１～４と同様にＥＣＡＰ法による強加工を室温で行って、得られたワイヤに１．７、２．９、４．０、及び５．２の累積相当ひずみを導入した（以上、強加工工程）。 In the same manner as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and cumulative equivalent strains of 1.7, 2.9, 4.0, and 5.2 were introduced into the obtained wires (above, Strong processing process).
次いで、強加工が施された直径９．８ｍｍのワイヤから採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より５０℃低い温度を熱処理温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の事前加熱を行った。そして、事前加熱後の直径１０ｍｍのワイヤを、スエージング機を用いて直径８．４ｍｍ（断面積減少率２９％）の細線を成形した（前伸線処理）。続いて、細線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４５℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の細線加熱を行った。そして、細線加熱を行った細線を、水冷した伸線ダイス内を１５００ｍｍ／分の引き抜き速度で通過させて、直径が８０μｍ（加工度９．３）の素線に成形した（仕上げ伸線処理）。次いで、素線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４５℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で４時間の仕上げ加熱処理を行った（以上、伸線加工工程）。 Next, the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature. Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere). And the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape | molded for the wire of diameter 10mm after a pre-heating using the swaging machine (pre-drawing process). Subsequently, the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the thin wire heated was passed through a water-cooled wire drawing die at a drawing speed of 1500 mm / min, and formed into a strand having a diameter of 80 μm (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the strand, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finishing heat treatment for 4 hours was performed in the inside (the wire drawing process).
素線の結晶組織の観察から、結晶組織を構成している結晶粒の伸線方向に直交する方向の平均粒径Ａは２μｍであり、結晶粒の伸線方向の平均粒径Ｂは、累積相当ひずみが１．７では２０μｍ、累積相当ひずみが２．９では１５μｍ、累積相当ひずみが４．０では１０μｍ、累積相当ひずみが５．２では２μｍであった。そして、得られた素線の導電率を測定し、素線から断面積が０．２ｍｍ２のケーブルを作製して常温で実験例１～４と同様のケーブル屈曲試験を行ってケーブル破断回数を求めた。導電率の値及びケーブル破断回数を表４に示す。また、結晶粒の伸線方向の平均粒径Ｂとケーブル破断回数の関係を図７に示す。 From the observation of the crystal structure of the strand, the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 2 μm, and the average particle diameter B in the drawing direction of the crystal grains is cumulative. When the equivalent strain was 1.7, it was 20 μm, when the cumulative equivalent strain was 2.9, it was 15 μm, when the cumulative equivalent strain was 4.0, it was 10 μm, and when the cumulative equivalent strain was 5.2, it was 2 μm. Then, the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 4 shows the conductivity values and the number of cable breaks. FIG. 7 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
（実験例３６～３８）
実験例３２～３５と同様の方法で直径が１０ｍｍ、長さが１００ｍｍのワイヤを作製した。そして、実験例１～４と同様にＥＣＡＰ法による強加工を室温で行って、得られたワイヤに１．７、４．０、及び５．２の累積相当ひずみを導入した。 (Experimental examples 36 to 38)
A wire having a diameter of 10 mm and a length of 100 mm was produced in the same manner as in Experimental Examples 32-35. Then, as in Experimental Examples 1 to 4, strong processing by the ECAP method was performed at room temperature, and cumulative equivalent strains of 1.7, 4.0, and 5.2 were introduced into the obtained wires.
次いで、強加工が施された直径９．８ｍｍのワイヤから採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より５０℃低い温度を熱処理温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の事前加熱を行った。そして、事前加熱後の直径１０ｍｍのワイヤを、スエージング機を用いて直径８．４ｍｍ（断面積減少率２９％）の細線を成形した（前伸線処理）。続いて、細線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４５℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で２時間の細線加熱を行った。そして、細線加熱を行った細線を、水冷した伸線ダイス内を１５００ｍｍ／分の引き抜き速度で通過させて、直径が８０μｍ（加工度９．３）の素線に成形した（仕上げ伸線処理）。次いで、素線から採取した試験片を用いて再結晶化温度を測定し、求めた再結晶化温度より４５℃低い温度を加熱温度に設定して、窒素ガス雰囲気（不活性ガス雰囲気の一例）中で１時間の仕上げ加熱処理を行った（以上、伸線加工工程）。 Next, the recrystallization temperature was measured using a test piece taken from a 9.8 mm diameter wire subjected to strong processing, and a temperature lower by 50 ° C. than the obtained recrystallization temperature was set as the heat treatment temperature. Preheating was performed for 2 hours in a gas atmosphere (an example of an inert gas atmosphere). And the thin wire of diameter 8.4mm (cross-sectional area reduction rate 29%) was shape | molded for the wire of diameter 10mm after a pre-heating using the swaging machine (pre-drawing process). Subsequently, the recrystallization temperature is measured using a test piece taken from a thin wire, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) Heating was performed for 2 hours. Then, the thin wire heated was passed through a water-cooled wire drawing die at a drawing speed of 1500 mm / min, and formed into a strand having a diameter of 80 μm (working degree 9.3) (finish wire drawing process). . Next, the recrystallization temperature is measured using a test piece taken from the strand, and a temperature lower by 45 ° C. than the obtained recrystallization temperature is set as the heating temperature, and a nitrogen gas atmosphere (an example of an inert gas atmosphere) The finish heat treatment for 1 hour was performed in the inside (the wire drawing process).
素線の結晶組織の観察から、結晶組織を構成している結晶粒の伸線方向に直交する方向の平均粒径Ａは０．５μｍであり、結晶粒の伸線方向の平均粒径Ｂは、累積相当ひずみが１．７では２０μｍ、累積相当ひずみが４．０では１０μｍ、累積相当ひずみが５．２では２μｍであった。そして、得られた素線の導電率を測定し、素線から断面積が０．２ｍｍ２のケーブルを作製して常温で実験例１～４と同様のケーブル屈曲試験を行ってケーブル破断回数を求めた。導電率の値及びケーブル破断回数を表４に示す。また、結晶粒の伸線方向の平均粒径Ｂとケーブル破断回数の関係を図７に示す。 From the observation of the crystal structure of the strand, the average particle diameter A in the direction orthogonal to the drawing direction of the crystal grains constituting the crystal structure is 0.5 μm, and the average particle diameter B in the drawing direction of the crystal grains is When the cumulative equivalent strain was 1.7, it was 20 μm, when the cumulative equivalent strain was 4.0, it was 10 μm, and when the cumulative equivalent strain was 5.2, it was 2 μm. Then, the conductivity of the obtained wire is measured, a cable having a cross-sectional area of 0.2 mm 2 is produced from the wire, and the cable bending test similar to Experimental Examples 1 to 4 is performed at room temperature to determine the number of cable breaks. Asked. Table 4 shows the conductivity values and the number of cable breaks. FIG. 7 shows the relationship between the average grain size B in the wire drawing direction of the crystal grains and the number of cable breaks.
表１～表４、図６、図７に示すケーブル屈曲試験の結果から、結晶組織を構成する結晶粒の伸線方向に直交する方向の平均粒径が２μｍ以下であることに加えて、結晶粒の伸線方向の平均粒径が１０μｍ以下になると、結晶粒の伸線方向の平均粒径が１０μｍを超える場合と比較して、ケーブル破断回数が約２倍程度大きくなること、結晶粒の伸線方向の平均粒径が１５μｍと１０μｍの間に、ケーブル破断回数が急増する遷移領域が存在することが確認できた。
また、図６、図７に示すように、結晶粒の伸線方向の平均粒径とケーブル破断回数の関係において、結晶粒の伸線方向に直交する方向の平均粒径が小さくなると、結晶粒の伸線方向の平均粒径が２０μｍ以下の範囲で、ケーブル破断回数が増加することが確認できた。 From the results of the cable bending test shown in Tables 1 to 4, FIG. 6, and FIG. 7, the average grain size in the direction perpendicular to the wire drawing direction of the crystal grains constituting the crystal structure is 2 μm or less. When the average grain size in the wire drawing direction is 10 μm or less, the number of cable breaks is about twice as large as that when the average grain size in the wire drawing direction exceeds 10 μm. It was confirmed that there was a transition region in which the number of cable breaks increased rapidly when the average particle size in the wire drawing direction was between 15 μm and 10 μm.
Further, as shown in FIGS. 6 and 7, when the average grain size in the direction orthogonal to the drawing direction of the crystal grains becomes smaller in the relationship between the average grain size in the drawing direction of the crystal grains and the number of cable breaks, the crystal grains It was confirmed that the number of cable breaks increased when the average particle size in the wire drawing direction was 20 μm or less.
以上、本発明を、実施例を参照して説明してきたが、本発明は何ら上記した実施例に記載した構成に限定されるものではなく、特許請求の範囲に記載されている事項の範囲内で考えられるその他の実施例や変形例も含むものである。
更に、本実施例とその他の実施例や変形例にそれぞれ含まれる構成要素を組合わせたものも、本発明に含まれる。 The present invention has been described with reference to the embodiments. However, the present invention is not limited to the configurations described in the above-described embodiments, and is within the scope of the matters described in the claims. Other embodiments and modifications that can be considered in the above are also included.
Further, the present invention includes a combination of components included in the present embodiment and other embodiments and modifications.
本発明に係る微結晶金属導体及びその製造方法は、産業用ロボット、民生用ロボット、自動車の配線等において、特に繰り返し曲げがかかるケーブル等に使用できる。これによってより長期の寿命を有する機器、装置を提供できる。 The microcrystalline metal conductor and the manufacturing method thereof according to the present invention can be used particularly for cables that are repeatedly bent in industrial robots, consumer robots, automobile wiring, and the like. As a result, it is possible to provide a device or device having a longer lifetime.
１０：微結晶金属導体、１１：ワイヤ、１２：結晶粒、１３：貫通孔、１４：金型、１５：一側開口部、１６：他側開口部、１７、１８：押圧部、１９、２０：把持手段、２１：ガイド部材、２２：上保持部、２３：下保持部、２４、２５：ロール、２６：上駆動部、２７：下駆動部 10: Microcrystalline metal conductor, 11: Wire, 12: Crystal grain, 13: Through hole, 14: Mold, 15: Opening on one side, 16: Opening on the other side, 17, 18: Pressing part, 19, 20 : Gripping means, 21: guide member, 22: upper holding part, 23: lower holding part, 24, 25: roll, 26: upper driving part, 27: lower driving part

Claims (13)

  1. 累積相当ひずみが４以上となる強加工が施された素材に、形状付与加工を行って得られる微結晶金属導体であって、
    長手方向の平均粒径が１０μｍ以下で、該長手方向に直交する方向の平均粒径が２μｍ以下である結晶粒から構成される結晶組織を有することを特徴とする微結晶金属導体。     A microcrystalline metal conductor obtained by applying a shape imparting process to a material that has been subjected to strong processing with a cumulative equivalent strain of 4 or more,
    A microcrystalline metal conductor having a crystal structure composed of crystal grains having an average grain size in a longitudinal direction of 10 μm or less and an average grain size in a direction perpendicular to the longitudinal direction of 2 μm or less.
  2. 請求項１記載の微結晶金属導体において、前記素材はワイヤであり、前記形状付与加工は線径が５０～１２０μｍの素線を形成する伸線加工であって、前記長手方向は前記伸線加工の伸線方向であり、前記長手方向に直交する方向は前記伸線方向に直交する方向であることを特徴とする微結晶金属導体。 2. The microcrystalline metal conductor according to claim 1, wherein the material is a wire, and the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 120 μm, wherein the longitudinal direction is the wire drawing process. A microcrystalline metal conductor characterized in that the direction perpendicular to the longitudinal direction is a direction perpendicular to the drawing direction.
  3. 素材に累積相当ひずみが４以上となる強加工を行い、該強加工が施された該素材に更に形状付与加工を行って形成する結晶組織を有する微結晶金属導体の製造方法であって、
    前記結晶組織を、長手方向の平均粒径が１０μｍ以下、該長手方向に直交する方向の平均粒径が２μｍ以下の結晶粒から構成することを特徴とする微結晶金属導体の製造方法。     It is a method for producing a microcrystalline metal conductor having a crystal structure formed by performing strong processing with a cumulative equivalent strain of 4 or more on a material, and further performing shape imparting processing on the material subjected to the strong processing,
    A method for producing a microcrystalline metal conductor, wherein the crystal structure is composed of crystal grains having an average grain size in the longitudinal direction of 10 μm or less and an average grain size in a direction perpendicular to the longitudinal direction of 2 μm or less.
  4. 請求項３記載の微結晶金属導体の製造方法において、前記素材はワイヤであり、前記形状付与加工は線径が５０～１２０μｍの素線を形成する伸線加工であって、前記長手方向は前記伸線加工の伸線方向であり、前記長手方向に直交する方向は前記伸線方向に直交する方向であることを特徴とする微結晶金属導体の製造方法。 4. The method for producing a microcrystalline metal conductor according to claim 3, wherein the material is a wire, and the shape imparting process is a wire drawing process for forming a strand having a wire diameter of 50 to 120 μm, wherein the longitudinal direction is the length of the wire. A method for producing a microcrystalline metal conductor, which is a wire drawing direction of wire drawing, and a direction orthogonal to the longitudinal direction is a direction orthogonal to the wire drawing direction.
  5. 請求項４記載の微結晶金属導体の製造方法において、金型に前記ワイヤを繰り返し通過させることにより前記強加工を行う際に、１回の加工前後に伴う断面積減少率が２０％以下であり、前記１回の加工で導入される相当ひずみが０．５以上であることを特徴とする微結晶金属導体の製造方法。 5. The method of manufacturing a microcrystalline metal conductor according to claim 4, wherein when the strong processing is performed by repeatedly passing the wire through a mold, the cross-sectional area reduction rate before and after one processing is 20% or less. The method for producing a microcrystalline metal conductor, wherein the equivalent strain introduced in the one-time processing is 0.5 or more.
  6. 請求項５記載の微結晶金属導体の製造方法において、前記強加工は、前記ワイヤを前記金型の屈曲する貫通孔の一側から押し込み、他側から排出させることにより行うことを特徴とする微結晶金属導体の製造方法。 6. The method of manufacturing a microcrystalline metal conductor according to claim 5, wherein the strong processing is performed by pushing the wire from one side of the through hole where the mold is bent and discharging the wire from the other side. A method for producing a crystalline metal conductor.
  7. 請求項６記載の微結晶金属導体の製造方法において、前記貫通孔の一側開口部の前方に前記ワイヤの側部を押圧して保持する把持手段を設け、該把持手段で該ワイヤを前記貫通孔に押し込むことを特徴とする微結晶金属導体の製造方法。 7. The method for producing a microcrystalline metal conductor according to claim 6, wherein gripping means for pressing and holding a side portion of the wire is provided in front of one side opening of the through hole, and the wire is passed through the wire by the gripping means. A method for producing a microcrystalline metal conductor, characterized by being pushed into a hole.
  8. 請求項４記載の微結晶金属導体の製造方法において、前記伸線加工は前記ワイヤを縮径して細線とする前伸線処理と、前記細線から前記素線を形成する仕上げ伸線処理とを有し、前記前伸線処理は、断面積減少率が５～３０％となる範囲で、前記仕上げ伸線処理は、加工度が３～１１となる範囲でそれぞれ行うことを特徴とする微結晶金属導体の製造方法。 5. The method for producing a microcrystalline metal conductor according to claim 4, wherein the wire drawing includes a pre-drawing process for reducing the diameter of the wire to form a fine wire, and a finish wire drawing process for forming the strand from the thin wire. The pre-drawing process is performed in a range where the cross-sectional area reduction rate is 5 to 30%, and the finish-drawing process is performed in a range where the processing degree is 3 to 11. A method for producing a metal conductor.
  9. 請求項８記載の微結晶金属導体の製造方法において、前記前伸線処理は、前記強加工が施された前記ワイヤを事前加熱した後に行うことを特徴とする微結晶金属導体の製造方法。 9. The method of manufacturing a microcrystalline metal conductor according to claim 8, wherein the pre-drawing process is performed after preheating the wire that has been subjected to the strong processing.
  10. 請求項９記載の微結晶金属導体の製造方法において、前記事前加熱は、前記強加工が行われた前記ワイヤの有する再結晶温度より２０～１００℃低い温度で行うことを特徴とする微結晶金属導体の製造方法。 10. The method for producing a microcrystalline metal conductor according to claim 9, wherein the preheating is performed at a temperature lower by 20 to 100 ° C. than a recrystallization temperature of the wire subjected to the strong processing. A method for producing a metal conductor.
  11. 請求項８～１０のいずれか１項に記載の微結晶金属導体の製造方法において、前記仕上げ伸線処理は、前記細線を、該細線の有する再結晶温度より１０～７０℃低い温度で加熱する細線加熱を行った後に行うことを特徴とする微結晶金属導体の製造方法。 The method for producing a microcrystalline metal conductor according to any one of claims 8 to 10, wherein in the finish drawing, the fine wire is heated at a temperature lower by 10 to 70 ° C than a recrystallization temperature of the fine wire. A method for producing a microcrystalline metal conductor, which is performed after performing fine wire heating.
  12. 請求項８～１１のいずれか１項に記載の微結晶金属導体の製造方法において、前記素線を、該素線の有する再結晶温度より１０～７０℃低い温度で仕上げ加熱することを特徴とする微結晶金属導体の製造方法。 The method for producing a microcrystalline metal conductor according to any one of claims 8 to 11, wherein the strand is finish-heated at a temperature lower by 10 to 70 ° C than a recrystallization temperature of the strand. A method for producing a microcrystalline metal conductor.
  13. 累積相当ひずみが４以上となる強加工を行って得られる微結晶金属導体であって、
    長手方向の平均粒径が１０μｍ以下で、該長手方向に直交する方向の平均粒径が２μｍ以下である結晶粒から構成される結晶組織を有することを特徴とする微結晶金属導体。
          It is a microcrystalline metal conductor obtained by performing strong processing with a cumulative equivalent strain of 4 or more,
    A microcrystalline metal conductor having a crystal structure composed of crystal grains having an average grain size in a longitudinal direction of 10 μm or less and an average grain size in a direction perpendicular to the longitudinal direction of 2 μm or less.
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