WO2013141097A1 - 透明電極、電子デバイス及び有機エレクトロルミネッセンス素子 - Google Patents
透明電極、電子デバイス及び有機エレクトロルミネッセンス素子 Download PDFInfo
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- WO2013141097A1 WO2013141097A1 PCT/JP2013/056910 JP2013056910W WO2013141097A1 WO 2013141097 A1 WO2013141097 A1 WO 2013141097A1 JP 2013056910 W JP2013056910 W JP 2013056910W WO 2013141097 A1 WO2013141097 A1 WO 2013141097A1
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- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- VEPOUCHBIJXQFI-UHFFFAOYSA-N pyrazabole Chemical compound [B-]1N2C=CC=[N+]2[B-][N+]2=CC=CN12 VEPOUCHBIJXQFI-UHFFFAOYSA-N 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical compound C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- DLJHXMRDIWMMGO-UHFFFAOYSA-N quinolin-8-ol;zinc Chemical compound [Zn].C1=CN=C2C(O)=CC=CC2=C1.C1=CN=C2C(O)=CC=CC2=C1 DLJHXMRDIWMMGO-UHFFFAOYSA-N 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 239000001022 rhodamine dye Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 150000003378 silver Chemical group 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical group NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 125000004149 thio group Chemical group *S* 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
- C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
- C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D213/06—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom containing only hydrogen and carbon atoms in addition to the ring nitrogen atom
- C07D213/22—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom containing only hydrogen and carbon atoms in addition to the ring nitrogen atom containing two or more pyridine rings directly linked together, e.g. bipyridyl
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
- C07D471/04—Ortho-condensed systems
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80517—Multilayers, e.g. transparent multilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Definitions
- the present invention relates to a transparent electrode, an electronic device, and an organic electroluminescence element, and more particularly, to a transparent electrode having both conductivity and light transmittance, and an electronic device and an organic electroluminescence element using the transparent electrode.
- An organic electroluminescence device (so-called organic EL device) using electroluminescence (hereinafter referred to as EL) of an organic material is a thin-film type completely solid device capable of emitting light at a low voltage of several V to several tens V. It has many excellent features such as high brightness, high luminous efficiency, thinness, and light weight. For this reason, it has been attracting attention in recent years as surface light emitters such as backlights for various displays, display boards such as signboards and emergency lights, and illumination light sources.
- Such an organic EL element has a structure in which a light emitting layer made of an organic material is sandwiched between two electrodes, and emitted light generated in the light emitting layer is transmitted through the electrode and taken out to the outside. For this reason, at least one of the two electrodes is configured as a transparent electrode.
- an oxide semiconductor material such as indium tin oxide (SnO 2 —In 2 O 3 : Indium Tin Oxide: ITO) is generally used.
- ITO indium tin oxide
- ITO uses rare metal indium, the material cost is high, and it is necessary to anneal at about 300 ° C. after film formation in order to reduce resistance. Therefore, a thin film is formed using Zn and Sn as raw materials, and a technology that achieves both transmittance and conductivity by forming a thin film using an alloy of silver and Mg having high electrical conductivity. Techniques have been proposed (see, for example, Patent Documents 3 and 4).
- the resistance value of the obtained thin film is insufficient at about 100 ⁇ / ⁇ , and the deterioration with time is remarkable because Mg is easily oxidized. was there.
- a sufficient resistance value cannot be obtained.
- a ZnO-based thin film containing Zn is likely to react with water and its performance is likely to fluctuate.
- the SnO 2 -based thin film had problems such as being difficult to etch.
- an object of the present invention is to provide a transparent electrode having sufficient conductivity and light transmittance, an electronic device having the transparent electrode, and an organic electroluminescence element.
- a conductive layer In a transparent electrode comprising an intermediate layer provided adjacent to the conductive layer, The intermediate layer contains a bipyridine derivative represented by the following general formula (1), A transparent electrode is provided in which the conductive layer is composed mainly of silver.
- E 1 to E 10 each represent CR or N, and R represents a hydrogen atom or a substituent.
- Ar represents a substituted or unsubstituted aromatic hydrocarbon ring or aromatic heterocyclic ring.
- An electronic device comprising the transparent electrode is provided.
- An organic electroluminescence device comprising the transparent electrode is provided.
- a conductive layer mainly composed of silver is provided on the intermediate layer containing the bipyridine derivative represented by the general formula (1). It is the structure which was made.
- the silver atom constituting the conductive layer interacts with the bipyridine derivative represented by the general formula (1) contained in the intermediate layer.
- the diffusion distance of silver atoms on the surface of the intermediate layer is reduced, and the aggregation of silver is suppressed. Therefore, in general, a silver thin film that is easily isolated in an island shape by film growth of a nuclear growth type (Volume-Weber: VW type) is a single-layer growth type (Frank-van der Merwe: FW type).
- a film is formed. Accordingly, it is possible to obtain a conductive layer having a uniform film thickness even though the film thickness is small. As a result, it is possible to obtain a transparent electrode in which conductivity is ensured while maintaining light transmittance with a thinner film thickness.
- a transparent electrode having sufficient conductivity and light transmission, an electronic device and an organic electroluminescence element having the transparent electrode.
- FIG. 1 is a schematic cross-sectional view showing the configuration of the transparent electrode of the embodiment.
- the transparent electrode 1 has a two-layer structure in which an intermediate layer 1a and a conductive layer 1b formed thereon are laminated.
- the intermediate layer 1a is a layer that contains a bipyridine derivative
- the conductive layer 1b is a layer that contains silver as a main component.
- the main component of the conductive layer 1b means that the content in the conductive layer 1b is 98% by mass or more.
- the transparency of the transparent electrode 1 of the present invention means that the light transmittance at a wavelength of 550 nm is 50% or more.
- the substrate 11 on which the transparent electrode 1 of the present invention is formed examples include, but are not limited to, glass and plastic. Further, the substrate 11 may be transparent or opaque. When the transparent electrode 1 of the present invention is used in an electronic device that extracts light from the substrate 11 side, the substrate 11 is preferably transparent. Examples of the transparent substrate 11 that is preferably used include glass, quartz, and a transparent resin film.
- the glass examples include silica glass, soda lime silica glass, lead glass, borosilicate glass, and alkali-free glass. From the viewpoint of adhesion to the intermediate layer 1a, durability, and smoothness, the surface of these glass materials may be subjected to physical treatment such as polishing, if necessary, or from an inorganic or organic material. Or a hybrid film obtained by combining these films may be formed.
- polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate, cellulose acetate butyrate, cellulose acetate propionate (CAP), Cellulose esters such as cellulose acetate phthalate (TAC) and cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfone , Polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylates, cyclone resins such as Arton (trade name JSR) or Appel (trade name Mits
- a film made of an inorganic material or an organic material or a hybrid film combining these films may be formed on the surface of the resin film.
- Such coatings and hybrid coatings have a water vapor transmission rate (25 ⁇ 0.5 ° C., relative humidity 90 ⁇ 2% RH) of 0.01 g / (measured by a method in accordance with JIS-K-7129-1992. m 2 ⁇ 24 hours) or less of a barrier film (also referred to as a barrier film or the like) is preferable.
- the oxygen permeability measured by the method according to JIS-K-7126-1987 is 10 ⁇ 3 ml / (m 2 ⁇ 24 hours ⁇ atm) or less, and the water vapor permeability is 10 ⁇ 5 g / (m (2 ⁇ 24 hours) or less is preferable.
- the material for forming the barrier film as described above may be any material that has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen.
- silicon oxide, silicon dioxide, silicon nitride, or the like is used. be able to.
- the method for forming the barrier film is not particularly limited.
- the vacuum deposition method, the sputtering method, the reactive sputtering method, the molecular beam epitaxy method, the cluster ion beam method, the ion plating method, the plasma polymerization method, the atmospheric pressure plasma weighting can be used, but an atmospheric pressure plasma polymerization method described in JP-A No. 2004-68143 is particularly preferable.
- the base material 11 is opaque, for example, a metal substrate such as aluminum or stainless steel, a film, an opaque resin substrate, a ceramic substrate, or the like can be used.
- the intermediate layer 1a is a layer configured using a bipyridine derivative represented by the following general formula (1).
- the film forming method includes a method using a wet process such as a coating method, an inkjet method, a coating method, a dip method, or a vapor deposition method. (Resistance heating, EB method, etc.), a method using a dry process such as a sputtering method, a CVD method, or the like. Of these, the vapor deposition method is preferably applied.
- bipyridine derivative represented by general formula (1) In the transparent electrode of the present invention, the bipyridine derivative contained in the intermediate layer is represented by the following general formula (1).
- E 1 to E 10 represent CR or N, and R represents a hydrogen atom or a substituent.
- the substituent represented by R is an alkyl group (for example, methyl group, ethyl group, propyl group, isopropyl group, tert-butyl group, pentyl group, hexyl group, octyl group, dodecyl group).
- Aromatic hydrocarbon group also called aromatic carbocyclic group, aryl group, etc., for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl group, acenaphthenyl group , Fluorenyl group, phenanthryl group, indenyl group, pyrenyl group, biphenylyl group ), Aromatic heterocyclic groups (for example, furyl, thienyl, pyr
- Ar represents a substituted or unsubstituted aromatic hydrocarbon ring or aromatic heterocyclic ring.
- aromatic hydrocarbon ring represented by Ar in the general formula (1) a benzene ring, a biphenyl ring, a naphthalene ring, an azulene ring, an anthracene ring, a phenanthrene ring, a pyrene ring, a chrysene ring, a naphthacene ring, a triphenylene ring, o -Terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring, pentacene ring, perylene ring, pentaphen ring, picene ring, pyrene ring, pyr
- the aromatic heterocycle represented by Ar in the general formula (1) includes a furan ring, a thiophene ring, an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, and a benzimidazole ring.
- Oxadiazole ring triazole ring, imidazole ring, pyrazole ring, thiazole ring, indole ring, benzimidazole ring, benzothiazole ring, benzoxazole ring, quinoxaline ring, quinazoline ring, phthalazine ring, carbazole ring, carboline ring, azacarbazole A ring etc. are mentioned.
- examples of the substituent that the ring represented by Ar in the general formula (1) may have include an alkyl group (for example, a methyl group, an ethyl group, a propyl group, an isopropyl group, a tert-butyl group, a pentyl group).
- an alkyl group for example, a methyl group, an ethyl group, a propyl group, an isopropyl group, a tert-butyl group, a pentyl group.
- bipyridine derivative represented by general formula (2) The bipyridine derivative represented by the general formula (1) is preferably further represented by the following general formula (2).
- E 11 to E 18 each represent CR or N, and R represents a hydrogen atom or a substituent.
- R represents a hydrogen atom or a substituent.
- substituent represented by R in the general formula (2) include the same substituents as those represented by R in the general formula (1).
- Ar represents a substituted or unsubstituted aromatic hydrocarbon ring or aromatic heterocyclic ring.
- the substituted or unsubstituted aromatic hydrocarbon ring represented by Ar in the general formula (2) is the same as the substituted or unsubstituted aromatic hydrocarbon ring represented by Ar in the general formula (1). Things can be mentioned.
- the substituted or unsubstituted aromatic heterocycle represented by Ar in the general formula (2) is the same as the substituted or unsubstituted aromatic heterocycle represented by Ar in the general formula (1). Can be mentioned.
- the bipyridine derivative represented by the general formula (1) is preferably a terpyridine derivative represented by the following general formula (3) or (4).
- E 10 and E 19 to E 29 each represent CR or N, and R represents a hydrogen atom or a substituent.
- R represents a hydrogen atom or a substituent.
- substituent represented by R in the general formula (3) include the same substituents as those represented by R in the general formula (1).
- Ar represents a substituted or unsubstituted aromatic hydrocarbon ring or aromatic heterocyclic ring.
- the substituted or unsubstituted aromatic hydrocarbon ring represented by Ar in the general formula (3) is the same as the substituted or unsubstituted aromatic hydrocarbon ring represented by Ar in the general formula (1). Things can be mentioned.
- the substituted or unsubstituted aromatic heterocycle represented by Ar in the general formula (3) is the same as the substituted or unsubstituted aromatic heterocycle represented by Ar in the general formula (1). Can be mentioned.
- E 30 to E 41 each represent CR or N, and R represents a hydrogen atom or a substituent.
- R represents a hydrogen atom or a substituent.
- Examples of the substituent represented by R in the general formula (4) include the same substituents as those represented by R in the general formula (1).
- Ar represents a substituted or unsubstituted aromatic hydrocarbon ring or aromatic heterocyclic ring.
- the substituted or unsubstituted aromatic hydrocarbon ring represented by Ar in the general formula (4) is the same as the substituted or unsubstituted aromatic hydrocarbon ring represented by Ar in the general formula (1). Things can be mentioned.
- the substituted or unsubstituted aromatic heterocycle represented by Ar in the general formula (4) is the same as the substituted or unsubstituted aromatic heterocycle represented by Ar in the general formula (1). Can be mentioned.
- the conductive layer 1b is a layer composed mainly of silver, and is a layer formed on the intermediate layer 1a.
- a method for forming such a conductive layer 1b a method using a wet process such as a coating method, an ink jet method, a coating method, a dip method, a vapor deposition method (resistance heating, EB method, etc.), a sputtering method, or a CVD method is used. And a method using a dry process such as Of these, the vapor deposition method is preferably applied.
- the conductive layer 1b is formed on the intermediate layer 1a, so that the conductive layer 1b is sufficiently conductive even without a high-temperature annealing process (for example, a heating process at 150 ° C. or higher) after the formation of the conductive layer. Although it is characterized, it may be subjected to high-temperature annealing after film formation, if necessary.
- a high-temperature annealing process for example, a heating process at 150 ° C. or higher
- the conductive layer 1b may be made of an alloy containing silver (Ag).
- an alloy containing silver examples include silver magnesium (AgMg), silver copper (AgCu), silver palladium (AgPd), silver palladium copper ( AgPdCu), silver indium (AgIn), and the like.
- the conductive layer 1b as described above may have a configuration in which a layer composed mainly of silver is divided into a plurality of layers as necessary.
- the conductive layer 1b preferably has a thickness in the range of 5 to 8 nm.
- the film thickness is larger than 8 nm, the absorption component or reflection component of the layer increases, and the transmittance of the transparent electrode is lowered, which is not preferable. Further, if the film thickness is less than 5 nm, the conductivity of the layer is insufficient, which is not preferable.
- the transparent electrode 1 having a laminated structure composed of the intermediate layer 1a and the conductive layer 1b formed thereon the upper part of the conductive layer 1b may be covered with a protective film, Another conductive layer may be laminated.
- the protective film and another conductive layer have light transmittance so that the light transmittance of the transparent electrode 1 is not impaired.
- the conductive layer 1b composed mainly of silver is provided on the intermediate layer 1a configured using the bipyridine derivative represented by the general formula (1). It is a configuration.
- the silver atoms constituting the conductive layer 1b interact with the bipyridine derivative represented by the general formula (1) constituting the intermediate layer 1a. This acts to reduce the diffusion distance of silver atoms on the surface of the intermediate layer 1a, thereby suppressing the aggregation of silver.
- the film formation of the conductive layer 1b generally composed mainly of silver
- a thin film is grown by a nuclear growth type (Volume-Weber: VW type), so that silver particles are easily isolated in an island shape.
- VW type nuclear growth type
- the film thickness is small, it is difficult to obtain conductivity, and the sheet resistance value becomes high. Therefore, it is necessary to increase the film thickness in order to ensure conductivity.
- the film thickness is increased, the light transmittance is lowered, which is not suitable as a transparent electrode.
- the transparent electrode 1 having the configuration of the present invention since aggregation of silver is suppressed on the intermediate layer 1a as described above, in the film formation of the conductive layer 1b composed mainly of silver, it is simple.
- a thin film is grown by a layer growth type (Frank-van der Merwe: FW type).
- the transparency of the transparent electrode 1 of the present invention means that the light transmittance at a wavelength of 550 nm is 50% or more.
- each of the above materials used as the intermediate layer 1a has silver as a main component.
- the film has sufficiently good light transmittance.
- the conductivity of the transparent electrode 1 is ensured mainly by the conductive layer 1b. Therefore, as described above, the conductive layer 1b composed of silver as a main component ensures conductivity with a thinner film thickness, so that the conductivity of the transparent electrode 1 is improved and the light transmission property is improved. It is possible to achieve a balance with improvement of the above.
- the transparent electrode 1 having the above-described configuration can be used for various electronic devices.
- Examples of electronic devices include organic EL elements, LEDs (light emitting diodes), liquid crystal elements, solar cells, touch panels, and the like.
- As electrode members that require light transmission in these electronic devices the above-mentioned transparent
- the electrode 1 can be used.
- embodiment of the organic EL element using a transparent electrode is described as an example of a use.
- FIG. 2 is a cross-sectional configuration diagram showing a first example of an organic EL element using the transparent electrode 1 described above as an example of the electronic device of the present invention. The configuration of the organic EL element will be described below based on this figure.
- An organic EL element 100 shown in FIG. 2 is provided on a transparent substrate (base material) 13, and in order from the transparent substrate 13 side, a light emitting functional layer 3 configured using the transparent electrode 1, an organic material, and the like, and The counter electrode 5a is laminated in this order.
- the transparent electrode 1 of the present invention described above is used as the transparent electrode 1.
- the organic EL element 100 is configured to extract the generated light (hereinafter referred to as emission light h) from at least the transparent substrate 13 side.
- the layer structure of the organic EL element 100 is not limited to the example described below, and may be a general layer structure.
- the transparent electrode 1 functions as an anode (that is, an anode)
- the counter electrode 5a functions as a cathode (that is, a cathode).
- the light emitting functional layer 3 has a structure in which a hole injection layer 3a / a hole transport layer 3b / a light emitting layer 3c / an electron transport layer 3d / an electron injection layer 3e are stacked in this order from the transparent electrode 1 side which is an anode.
- the hole injection layer 3a and the hole transport layer 3b may be provided as a hole transport / injection layer.
- the electron transport layer 3d and the electron injection layer 3e may be provided as an electron transport / injection layer.
- the electron injection layer 3e may be composed of an inorganic material.
- the light emitting functional layer 3 may be laminated with a hole blocking layer, an electron blocking layer, or the like as necessary.
- the light emitting layer 3c may have a structure in which each color light emitting layer that generates emitted light in each wavelength region is laminated, and each of these color light emitting layers is laminated via a non-light emitting intermediate layer.
- the intermediate layer may function as a hole blocking layer and an electron blocking layer.
- the counter electrode 5a which is a cathode, may have a laminated structure as necessary. In such a configuration, only a portion where the light emitting functional layer 3 is sandwiched between the transparent electrode 1 and the counter electrode 5 a becomes a light emitting region in the organic EL element 100.
- the auxiliary electrode 15 may be provided in contact with the conductive layer 1 b of the transparent electrode 1 for the purpose of reducing the resistance of the transparent electrode 1.
- the organic EL element 100 having the above configuration is sealed with a sealing material 17 described later on the transparent substrate 13 for the purpose of preventing deterioration of the light emitting functional layer 3 formed using an organic material or the like. ing.
- the sealing material 17 is fixed to the transparent substrate 13 side with an adhesive 19. However, it is assumed that the terminal portions of the transparent electrode 1 and the counter electrode 5a are provided on the transparent substrate 13 so as to be exposed from the sealing material 17 while being insulated from each other by the light emitting functional layer 3.
- the details of the main layers for constituting the organic EL element 100 described above will be described in terms of the transparent substrate 13, the transparent electrode 1, the counter electrode 5a, the light emitting layer 3c of the light emitting functional layer 3, the other layers of the light emitting functional layer 3, and the auxiliary.
- the electrode 15 and the sealing material 17 will be described in this order. Thereafter, a method for producing the organic EL element 100 will be described.
- the transparent substrate 13 is the base material 11 on which the transparent electrode 1 of the present invention described above is provided, and the transparent base material 11 having light transmittance among the base materials 11 described above is used.
- the transparent electrode 1 is the transparent electrode 1 of the present invention described above, and has a configuration in which an intermediate layer 1a and a conductive layer 1b are sequentially formed from the transparent substrate 13 side.
- the transparent electrode 1 functions as an anode
- the conductive layer 1b is a substantial anode.
- the counter electrode 5a is an electrode film that functions as a cathode for supplying electrons to the light emitting functional layer 3, and is made of a metal, an alloy, an organic or inorganic conductive compound, or a mixture thereof. Specifically, aluminum, silver, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, indium, lithium / aluminum mixture, rare earth metal, ITO, ZnO, TiO 2 , An oxide semiconductor such as SnO 2 can be given.
- the counter electrode 5a can be produced by forming a thin film of these conductive materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the counter electrode 5a is preferably several hundred ⁇ / ⁇ or less, and the film thickness is usually selected in the range of 5 nm to 5 ⁇ m, preferably 5 nm to 200 nm.
- the counter electrode is made of a conductive material having good light transmittance selected from the above-described conductive materials. 5a should just be comprised.
- the light emitting layer 3c used in the present invention contains a phosphorescent compound as a light emitting material.
- the light emitting layer 3c is a layer that emits light by recombination of electrons injected from the electrode or the electron transport layer 3d and holes injected from the hole transport layer 3b, and the light emitting portion is the light emitting layer 3c. Even within the layer, it may be the interface between the light emitting layer 3c and the adjacent layer.
- the light emitting layer 3c is not particularly limited in its configuration as long as the light emitting material contained satisfies the light emission requirements. Moreover, there may be a plurality of layers having the same emission spectrum and emission maximum wavelength. In this case, it is preferable to have a non-light emitting intermediate layer (not shown) between the light emitting layers 3c.
- the total film thickness of the light emitting layer 3c is preferably in the range of 1 to 100 nm, and more preferably 1 to 30 nm because a lower driving voltage can be obtained.
- the sum total of the film thickness of the light emitting layer 3c is a film thickness also including the said intermediate
- the thickness of each light emitting layer is preferably adjusted to a range of 1 to 50 nm, and more preferably adjusted to a range of 1 to 20 nm.
- the plurality of stacked light emitting layers correspond to blue, green, and red light emitting colors, there is no particular limitation on the relationship between the film thicknesses of the blue, green, and red light emitting layers.
- the light emitting layer 3c configured as described above is formed by forming a light emitting material or a host compound, which will be described later, by a known thin film forming method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, or an ink jet method. Can be formed.
- a known thin film forming method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, or an ink jet method. Can be formed.
- the light emitting layer 3c may be configured by mixing a plurality of light emitting materials, or may be configured by mixing a phosphorescent light emitting material and a fluorescent light emitting material (also referred to as a fluorescent dopant or a fluorescent compound). .
- the structure of the light emitting layer 3c preferably contains a host compound (also referred to as a light emitting host or the like) and a light emitting material (also referred to as a light emitting dopant compound) and emits light from the light emitting material.
- a host compound also referred to as a light emitting host or the like
- a light emitting material also referred to as a light emitting dopant compound
- a compound having a phosphorescence quantum yield of phosphorescence emission at room temperature (25 ° C.) of less than 0.1 is preferable. More preferably, the phosphorescence quantum yield is less than 0.01. Moreover, it is preferable that the volume ratio in the layer is 50% or more among the compounds contained in the light emitting layer 3c.
- a known host compound may be used alone, or a plurality of types may be used.
- a plurality of types of host compounds it is possible to adjust the movement of charges, and the organic EL element can be made highly efficient.
- a plurality of kinds of light emitting materials described later it is possible to mix different light emission, thereby obtaining an arbitrary light emission color.
- the host compound used may be a conventionally known low molecular compound, a high molecular compound having a repeating unit, or a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (evaporation polymerizable light emitting host). .
- Tg glass transition temperature
- the glass transition point (Tg) here is a value determined by a method based on JIS-K-7121 using DSC (Differential Scanning Colorimetry).
- H1 to H79 Specific examples (H1 to H79) of host compounds that can be used in the present invention are shown below, but are not limited thereto.
- a phosphorescent compound As a light-emitting material that can be used in the present invention, a phosphorescent compound (also referred to as a phosphorescent compound or a phosphorescent material) can be given.
- a phosphorescent compound is a compound in which light emission from an excited triplet is observed. Specifically, a phosphorescent compound emits phosphorescence at room temperature (25 ° C.), and a phosphorescence quantum yield of 0.01 at 25 ° C. Although defined as the above compounds, the preferred phosphorescence quantum yield is 0.1 or more.
- the phosphorescent quantum yield can be measured by the method described in Spectra II, page 398 (1992 version, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. Although the phosphorescence quantum yield in a solution can be measured using various solvents, when using a phosphorescent compound in the present invention, the above phosphorescence quantum yield (0.01 or more) is achieved in any solvent. It only has to be done.
- phosphorescent compounds There are two types of light emission principles of phosphorescent compounds. One is that recombination of carriers occurs on the host compound to which carriers are transported to generate an excited state of the host compound, and this energy is transferred to the phosphorescent compound to obtain light emission from the phosphorescent compound. It is an energy transfer type. The other is a carrier trap type in which a phosphorescent compound serves as a carrier trap, and recombination of carriers occurs on the phosphorescent compound, and light emission from the phosphorescent compound is obtained. In any case, it is a condition that the excited state energy of the phosphorescent compound is lower than the excited state energy of the host compound.
- the phosphorescent compound can be appropriately selected from known compounds used for the light emitting layer of a general organic EL device, and preferably contains a metal of group 8 to 10 in the periodic table of elements.
- a complex compound more preferably an iridium compound, an osmium compound, a platinum compound (platinum complex compound), or a rare earth complex, and most preferably an iridium compound.
- At least one light emitting layer 3c may contain two or more phosphorescent compounds, and the concentration ratio of the phosphorescent compound in the light emitting layer 3c varies in the thickness direction of the light emitting layer 3c. It may be.
- the phosphorescent compound is preferably 0.1% by volume or more and less than 30% by volume with respect to the total amount of the light emitting layer 3c.
- the compound (phosphorescent compound) contained in the light emitting layer 3c is preferably a compound represented by the following general formula (A).
- the phosphorescent compound represented by the general formula (A) (also referred to as a phosphorescent metal complex) is preferably contained as a light emitting dopant in the light emitting layer 3c of the organic EL element 100. It may be contained in a light emitting functional layer other than the light emitting layer 3c.
- P and Q each represent a carbon atom or a nitrogen atom
- A1 represents an atomic group that forms an aromatic hydrocarbon ring or an aromatic heterocycle together with PC.
- A2 represents an atomic group that forms an aromatic heterocycle with QN.
- P1-L1-P2 represents a bidentate ligand
- P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom.
- L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
- j1 represents an integer of 1 to 3
- j2 represents an integer of 0 to 2
- j1 + j2 is 2 or 3.
- M1 represents a group 8-10 transition metal element in the periodic table.
- P and Q each represent a carbon atom or a nitrogen atom.
- examples of the aromatic hydrocarbon ring that A1 forms with PC include a benzene ring, biphenyl ring, naphthalene ring, azulene ring, anthracene ring, phenanthrene ring, pyrene ring, chrysene ring, Naphthacene ring, triphenylene ring, o-terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring, pentacene ring, perylene ring, pentaphen ring, Examples include a picene ring, a pyrene ring, a pyranthrene ring, and an anthraanthrene ring.
- These rings may further have a substituent represented by R in the general formula (1).
- the aromatic heterocycle formed by A1 together with P—C includes a furan ring, a thiophene ring, an oxazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, Benzimidazole ring, oxadiazole ring, triazole ring, imidazole ring, pyrazole ring, thiazole ring, indole ring, benzimidazole ring, benzothiazole ring, benzoxazole ring, quinoxaline ring, quinazoline ring, phthalazine ring, carbazole ring, azacarbazole A ring etc. are mentioned.
- the azacarbazole ring means one in which at least one carbon atom of the benzene ring constituting the carbazole ring is replaced with a nitrogen atom.
- These rings may further have a substituent represented by R in the general formula (1).
- the aromatic heterocycle formed by A2 together with QN includes an oxazole ring, an oxadiazole ring, an oxatriazole ring, an isoxazole ring, a tetrazole ring, a thiadiazole ring, a thiatriazole ring, Examples include a thiazole ring, a pyrrole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, an imidazole ring, a pyrazole ring, and a triazole ring.
- These rings may further have a substituent represented by R in the general formula (1).
- P1-L1-P2 represents a bidentate ligand
- P1 and P2 each independently represent a carbon atom, a nitrogen atom, or an oxygen atom
- L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
- Examples of the bidentate ligand represented by P1-L1-P2 include phenylpyridine, phenylpyrazole, phenylimidazole, phenyltriazole, phenyltetrazole, pyrazabol, acetylacetone, picolinic acid, and the like.
- j1 represents an integer of 1 to 3
- j2 represents an integer of 0 to 2
- j1 + j2 represents 2 or 3
- j2 is preferably 0.
- M1 is a transition metal element of Group 8 to Group 10 (also referred to simply as transition metal) in the periodic table of elements, and iridium is particularly preferable.
- Z represents a hydrocarbon ring group or a heterocyclic group.
- P and Q each represent a carbon atom or a nitrogen atom
- A1 represents an atomic group that forms an aromatic hydrocarbon ring or an aromatic heterocyclic ring together with P—C.
- P1-L1-P2 represents a bidentate ligand
- P1 and P2 each independently represent a carbon atom, a nitrogen atom, or an oxygen atom.
- L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
- j1 represents an integer of 1 to 3
- j2 represents an integer of 0 to 2
- j1 + j2 is 2 or 3.
- M1 represents a group 8-10 transition metal element in the periodic table.
- examples of the hydrocarbon ring group represented by Z include a non-aromatic hydrocarbon ring group and an aromatic hydrocarbon ring group, and examples of the non-aromatic hydrocarbon ring group include a cyclopropyl group. , Cyclopentyl group, cyclohexyl group and the like. These groups may be unsubstituted or have a substituent described later.
- aromatic hydrocarbon ring group examples include, for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl. Group, acenaphthenyl group, fluorenyl group, phenanthryl group, indenyl group, pyrenyl group, biphenylyl group and the like.
- examples of the heterocyclic group represented by Z include a non-aromatic heterocyclic group and an aromatic heterocyclic group.
- examples of the non-aromatic heterocyclic group include an epoxy ring and an aziridine group. Ring, thiirane ring, oxetane ring, azetidine ring, thietane ring, tetrahydrofuran ring, dioxolane ring, pyrrolidine ring, pyrazolidine ring, imidazolidine ring, oxazolidine ring, tetrahydrothiophene ring, sulfolane ring, thiazolidine ring, ⁇ -caprolactone ring, ⁇ - Caprolactam ring, piperidine ring, hexahydropyridazine ring, hexahydropyrimidine ring, piperazine ring, morpholine ring, tetrahydropyran ring
- aromatic heterocyclic group examples include a pyridyl group, pyrimidinyl group, furyl group, pyrrolyl group, imidazolyl group, benzoimidazolyl group, pyrazolyl group, pyrazinyl group, triazolyl group (for example, 1,2,4-triazol-1-yl).
- oxazolyl group 1,2,3-triazol-1-yl group, etc.
- benzoxazolyl group thiazolyl group, isoxazolyl group, isothiazolyl group, furazanyl group, thienyl group, quinolyl group, benzofuryl group, dibenzofuryl group , Benzothienyl group, dibenzothienyl group, indolyl group, carbazolyl group, carbolinyl group, diazacarbazolyl group (indicating that one of the carbon atoms constituting the carboline ring of the carbolinyl group is replaced by a nitrogen atom), quinoxalinyl Group, pyridazinyl group, triazinyl group, Nazoriniru group, phthalazinyl group, and the like.
- the group represented by Z is an aromatic hydrocarbon ring group or an aromatic heterocyclic group.
- the aromatic hydrocarbon ring that A1 forms with P—C includes benzene ring, biphenyl ring, naphthalene ring, azulene ring, anthracene ring, phenanthrene ring, pyrene ring, chrysene ring, naphthacene ring , Triphenylene ring, o-terphenyl ring, m-terphenyl ring, p-terphenyl ring, acenaphthene ring, coronene ring, fluorene ring, fluoranthrene ring, naphthacene ring, pentacene ring, perylene ring, pentaphen ring, picene ring , Pyrene ring, pyranthrene ring, anthraanthrene ring and the like.
- These rings may further have a substituent represented by R in the general formula (1).
- the aromatic heterocycle formed by A1 together with PC includes furan ring, thiophene ring, oxazole ring, pyrrole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, triazine ring, benzo Imidazole ring, oxadiazole ring, triazole ring, imidazole ring, pyrazole ring, thiazole ring, indole ring, benzimidazole ring, benzothiazole ring, benzoxazole ring, quinoxaline ring, quinazoline ring, phthalazine ring, carbazole ring, carboline ring, And azacarbazole ring.
- the azacarbazole ring means one in which at least one carbon atom of the benzene ring constituting the carbazole ring is replaced with a nitrogen atom.
- These rings may further have a substituent represented by R in the general formula (1).
- examples of the bidentate ligand represented by P1-L1-P2 include phenylpyridine, phenylpyrazole, phenylimidazole, phenyltriazole, phenyltetrazole, pyrazabole, acetylacetone, and picolinic acid. .
- J1 represents an integer of 1 to 3
- j2 represents an integer of 0 to 2
- j1 + j2 represents 2 or 3
- j2 is preferably 0.
- transition metal elements of Group 8 to Group 10 in the periodic table of elements represented by M1 also simply referred to as transition metals
- M1 also simply referred to as transition metals
- R03 represents a substituent
- R04 represents a hydrogen atom or a substituent
- a plurality of R04 may be bonded to each other to form a ring.
- n01 represents an integer of 1 to 4.
- R05 represents a hydrogen atom or a substituent, and a plurality of R05 may be bonded to each other to form a ring.
- n02 represents an integer of 1 to 2.
- R06 represents a hydrogen atom or a substituent, and may combine with each other to form a ring.
- n03 represents an integer of 1 to 4.
- Z1 represents an atomic group necessary for forming a 6-membered aromatic hydrocarbon ring or a 5-membered or 6-membered aromatic heterocycle together with C—C.
- Z2 represents an atomic group necessary for forming a hydrocarbon ring group or a heterocyclic group.
- P1-L1-P2 represents a bidentate ligand, and P1 and P2 each independently represent a carbon atom, a nitrogen atom or an oxygen atom.
- L1 represents an atomic group that forms a bidentate ligand together with P1 and P2.
- j1 represents an integer of 1 to 3
- j2 represents an integer of 0 to 2
- j1 + j2 is 2 or 3.
- M1 represents a group 8-10 transition metal element in the periodic table.
- R03 and R06, R04 and R06, and R05 and R06 may be bonded to each other to form a ring.
- R03, R04, R05, each represented substituent in R06 are the compounds of formula (1), it is synonymous with the substituents represented by Y 1.
- examples of the 6-membered aromatic hydrocarbon ring formed by Z1 together with C—C include a benzene ring.
- These rings may further have a substituent represented by R in the general formula (1).
- examples of the 5-membered or 6-membered aromatic heterocycle formed by Z1 together with C—C include an oxazole ring, an oxadiazole ring, an oxatriazole ring, an isoxazole ring, a tetrazole ring, and a thiadiazole.
- These rings may further have a substituent represented by R in the general formula (1).
- examples of the hydrocarbon ring group represented by Z2 include a non-aromatic hydrocarbon ring group and an aromatic hydrocarbon ring group, and examples of the non-aromatic hydrocarbon ring group include a cyclopropyl group. , Cyclopentyl group, cyclohexyl group and the like. These groups may be unsubstituted or have a substituent described later.
- aromatic hydrocarbon ring group examples include, for example, phenyl group, p-chlorophenyl group, mesityl group, tolyl group, xylyl group, naphthyl group, anthryl group, azulenyl.
- phenyl group p-chlorophenyl group
- mesityl group tolyl group
- xylyl group naphthyl group
- anthryl group azulenyl.
- acenaphthenyl group fluorenyl group, phenanthryl group, indenyl group, pyrenyl group, biphenylyl group and the like.
- R substituent represented by R in the general formula (1).
- examples of the heterocyclic group represented by Z2 include a non-aromatic heterocyclic group and an aromatic heterocyclic group.
- examples of the non-aromatic heterocyclic group include an epoxy ring and an aziridine group. Ring, thiirane ring, oxetane ring, azetidine ring, thietane ring, tetrahydrofuran ring, dioxolane ring, pyrrolidine ring, pyrazolidine ring, imidazolidine ring, oxazolidine ring, tetrahydrothiophene ring, sulfolane ring, thiazolidine ring, ⁇ -caprolactone ring, ⁇ - Caprolactam ring, piperidine ring, hexahydropyridazine ring, hexahydropyrimidine ring, piperazine ring, morpholine ring, tetrahydropyran
- aromatic heterocyclic group examples include a pyridyl group, pyrimidinyl group, furyl group, pyrrolyl group, imidazolyl group, benzoimidazolyl group, pyrazolyl group, pyrazinyl group, triazolyl group (for example, 1,2,4-triazol-1-yl).
- oxazolyl group 1,2,3-triazol-1-yl group, etc.
- benzoxazolyl group thiazolyl group, isoxazolyl group, isothiazolyl group, furazanyl group, thienyl group, quinolyl group, benzofuryl group, dibenzofuryl group , Benzothienyl group, dibenzothienyl group, indolyl group, carbazolyl group, carbolinyl group, diazacarbazolyl group (indicating that one of the carbon atoms constituting the carboline ring of the carbolinyl group is replaced by a nitrogen atom), quinoxalinyl Group, pyridazinyl group, triazinyl group, Nazoriniru group, phthalazinyl group, and the like.
- These rings may be unsubstituted or may further have a substituent represented by R in the general formula (1).
- the group formed by Z1 and Z2 is preferably a benzene ring.
- the bidentate ligand represented by P1-L1-P2 has the same meaning as the bidentate ligand represented by P1-L1-P2 in the general formula (A). .
- the transition metal elements of groups 8 to 10 in the periodic table of elements represented by M1 are the transition metal groups of groups 8 to 10 in the periodic table of elements represented by M1 in the general formula (A). Synonymous with metal element.
- the phosphorescent compound can be appropriately selected from known compounds used for the light emitting layer 3 c of the organic EL element 100.
- the phosphorescent compound according to the present invention is preferably a complex compound containing a group 8-10 metal in the periodic table of elements, more preferably an iridium compound, an osmium compound, or a platinum compound (platinum complex compound). Rare earth complexes, most preferably iridium compounds.
- Pt-1 to Pt-3, A-1, Ir-1 to Ir-45 Specific examples (Pt-1 to Pt-3, A-1, Ir-1 to Ir-45) of phosphorescent compounds according to the present invention are shown below, but the present invention is not limited to these.
- m and n represent the number of repetitions.
- phosphorescent compound also referred to as a phosphorescent metal complex or the like
- Fluorescent materials include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes, stilbene dyes Examples thereof include dyes, polythiophene dyes, and rare earth complex phosphors.
- injection layer hole injection layer 3a, electron injection layer 3e
- the injection layer is a layer provided between the electrode and the light emitting layer 3c in order to lower the driving voltage and improve the light emission luminance.
- the injection layer can be provided as necessary.
- the hole injection layer 3a may be present between the anode and the light emitting layer 3c or the hole transport layer 3b, and the electron injection layer 3e may be present between the cathode and the light emitting layer 3c or the electron transport layer 3d. .
- JP-A-9-45479 JP-A-9-260062, JP-A-8-288069, and the like.
- Specific examples include phthalocyanine represented by copper phthalocyanine.
- examples thereof include a layer, an oxide layer typified by vanadium oxide, an amorphous carbon layer, and a polymer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.
- the electron injection layer 3e is desirably a very thin film, and the film thickness is preferably in the range of 1 nm to 10 ⁇ m although it depends on the material.
- the hole transport layer 3b is made of a hole transport material having a function of transporting holes, and in a broad sense, the hole injection layer 3a and the electron blocking layer are also included in the hole transport layer 3b.
- the hole transport layer 3b can be provided as a single layer or a plurality of layers.
- the hole transport material has either hole injection or transport or electron barrier properties, and may be either organic or inorganic.
- triazole derivatives oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives
- Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.
- hole transport material those described above can be used, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
- aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminoph
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
- a so-called p-type hole transport material as described in 139 can also be used. In the present invention, it is preferable to use these materials because a light-emitting element with higher efficiency can be obtained.
- the hole transport layer 3b is formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. be able to.
- the film thickness of the hole transport layer 3b is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the hole transport layer 3b may have a single layer structure composed of one or more of the above materials.
- Examples thereof include JP-A-4-297076, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
- the electron transport layer 3d is made of a material having a function of transporting electrons. In a broad sense, the electron injection layer 3e and a hole blocking layer (not shown) are also included in the electron transport layer 3d.
- the electron transport layer 3d can be provided as a single layer structure or a multi-layer structure.
- an electron transport material also serving as a hole blocking material
- electrons injected from the cathode are used. What is necessary is just to have the function to transmit to the light emitting layer 3c.
- any one of conventionally known compounds can be selected and used. Examples include nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane, anthrone derivatives, and oxadiazole derivatives.
- a thiadiazole derivative in which an oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group are also used as the material for the electron transport layer 3d.
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq 3 ), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) Aluminum, tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), etc.
- Mg Metal complexes replaced with Cu, Ca, Sn, Ga, or Pb can also be used as the material for the electron transport layer 3d.
- metal-free or metal phthalocyanine or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the material for the electron transport layer 3d.
- a distyrylpyrazine derivative exemplified also as a material of the light emitting layer 3c can be used as a material of the electron transport layer 3d, and n-type Si, n, like the hole injection layer 3a and the hole transport layer 3b.
- An inorganic semiconductor such as type-SiC can also be used as the material of the electron transport layer 3d.
- the electron transport layer 3d can be formed by thinning the above material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method.
- the film thickness of the electron transport layer 3d is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the electron transport layer 3d may have a single layer structure composed of one or more of the above materials.
- the electron transport layer 3d contains potassium or a potassium compound.
- the potassium compound for example, potassium fluoride can be used.
- the material (electron transporting compound) of the electron transport layer 3d the same material as that constituting the intermediate layer 1a described above may be used.
- the electron transport layer 3d also serving as the electron injection layer 3e, and the same material as that constituting the intermediate layer 1a described above may be used.
- the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film as described above. For example, it is described in JP-A Nos. 11-204258 and 11-204359, and “Organic EL elements and the forefront of industrialization (published by NTT Corporation on November 30, 1998)” on page 237. There is a hole blocking (hole blocking) layer.
- the hole blocking layer has the function of the electron transport layer 3d in a broad sense.
- the hole blocking layer is made of a hole blocking material that has a function of transporting electrons but has a very small ability to transport holes, and recombines electrons and holes by blocking holes while transporting electrons. Probability can be improved.
- the structure of the electron carrying layer 3d mentioned later can be used as a hole-blocking layer based on this invention as needed.
- the hole blocking layer is preferably provided adjacent to the light emitting layer 3c.
- the electron blocking layer has the function of the hole transport layer 3b in a broad sense.
- the electron blocking layer is made of a material that has a function of transporting holes but has a very small ability to transport electrons, and improves the probability of recombination of electrons and holes by blocking electrons while transporting holes. be able to.
- the structure of the positive hole transport layer 3b mentioned later can be used as an electron blocking layer as needed.
- the film thickness of the hole blocking layer according to the present invention is preferably 3 to 100 nm, and more preferably 5 to 30 nm.
- the auxiliary electrode 15 is provided for the purpose of reducing the resistance of the transparent electrode 1, and is provided in contact with the conductive layer 1 b of the transparent electrode 1.
- the material forming the auxiliary electrode 15 is preferably a metal having low resistance such as gold, platinum, silver, copper, or aluminum. Since these metals have low light transmittance, a pattern is formed in a range not affected by extraction of the emitted light h from the light extraction surface 13a.
- Examples of the method for forming the auxiliary electrode 15 include a vapor deposition method, a sputtering method, a printing method, an ink jet method, and an aerosol jet method.
- the line width of the auxiliary electrode 15 is preferably 50 ⁇ m or less from the viewpoint of the aperture ratio for extracting light, and the thickness of the auxiliary electrode 15 is preferably 1 ⁇ m or more from the viewpoint of conductivity.
- the sealing material 17 covers the organic EL element 100 and may be a plate-shaped (film-shaped) sealing member that is fixed to the transparent substrate 13 side by the adhesive 19. It may be a stop film. Such a sealing material 17 is provided in a state of covering at least the light emitting functional layer 3 in a state in which the terminal portions of the transparent electrode 1 and the counter electrode 5a in the organic EL element 100 are exposed. Further, an electrode may be provided on the sealing material 17 so that the transparent electrode 1 of the organic EL element 100 and the terminal portions of the counter electrode 5a are electrically connected to this electrode.
- the plate-like (film-like) sealing material 17 include a glass substrate, a polymer substrate, a metal substrate, and the like. These substrate materials may be used in the form of a thin film.
- the glass substrate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
- the polymer substrate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone.
- the metal substrate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
- the element can be made thin, a polymer substrate or a metal substrate formed into a thin film can be preferably used as the sealing material.
- the polymer substrate in the form of a film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 ⁇ 10 ⁇ 3 ml / (m 2 ⁇ 24 h ⁇ atm) or less, and JIS K 7129-1992.
- the water vapor permeability (25 ⁇ 0.5 ° C., relative humidity (90 ⁇ 2)% RH) measured by a method in accordance with the above is 1 ⁇ 10 ⁇ 3 g / (m 2 ⁇ 24 h) or less. It is preferable.
- the above substrate material may be processed into a concave plate shape and used as the sealing material 17.
- the above-described substrate member is subjected to processing such as sand blasting or chemical etching to form a concave shape.
- An adhesive 19 for fixing such a plate-shaped sealing material 17 to the transparent substrate 13 side seals the organic EL element 100 sandwiched between the sealing material 17 and the transparent substrate 13. Used as a sealing agent.
- Specific examples of such an adhesive 19 include photocuring and thermosetting adhesives having reactive vinyl groups of acrylic acid oligomers and methacrylic acid oligomers, moisture curing types such as 2-cyanoacrylates, and the like. Can be mentioned.
- an adhesive 19 there can be mentioned epoxy-based heat and chemical curing type (two-component mixing).
- hot-melt type polyamide, polyester, and polyolefin can be mentioned.
- a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
- the adhesive 19 is preferably one that can be adhesively cured from room temperature to 80 ° C. Further, a desiccant may be dispersed in the adhesive 19.
- Application of the adhesive 19 to the bonding portion between the sealing material 17 and the transparent substrate 13 may be performed using a commercially available dispenser or may be printed like screen printing.
- this gap when a gap is formed between the plate-shaped sealing material 17, the transparent substrate 13, and the adhesive 19, this gap has an inert gas such as nitrogen or argon or fluoride in the gas phase and the liquid phase. It is preferable to inject an inert liquid such as hydrocarbon or silicon oil. A vacuum is also possible. Moreover, a hygroscopic compound can also be enclosed inside.
- an inert gas such as nitrogen or argon or fluoride in the gas phase and the liquid phase. It is preferable to inject an inert liquid such as hydrocarbon or silicon oil. A vacuum is also possible.
- a hygroscopic compound can also be enclosed inside.
- hygroscopic compound examples include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate).
- metal oxides for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide
- sulfates for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate.
- metal halides eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.
- perchloric acids eg perchloric acid Barium, magnesium perchlorate, and the like
- anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
- the sealing material 17 when a sealing film is used as the sealing material 17, the light emitting functional layer 3 in the organic EL element 100 is completely covered and the terminal portions of the transparent electrode 1 and the counter electrode 5a in the organic EL element 100 are exposed.
- a sealing film is provided on the transparent substrate 13.
- Such a sealing film is composed of an inorganic material or an organic material.
- it is made of a material having a function of suppressing intrusion of a substance that causes deterioration of the light emitting functional layer 3 in the organic EL element 100 such as moisture and oxygen.
- a material for example, an inorganic material such as silicon oxide, silicon dioxide, or silicon nitride is used.
- a laminated structure may be formed by using a film made of an organic material together with a film made of these inorganic materials.
- the method for forming these films is not particularly limited.
- vacuum deposition, sputtering, reactive sputtering, molecular beam epitaxy, cluster ion beam, ion plating, plasma polymerization, atmospheric pressure plasma A combination method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
- a protective film or a protective plate may be provided between the transparent substrate 13 and the organic EL element 100 and the sealing material 17.
- This protective film or protective plate is for mechanically protecting the organic EL element 100, and in particular, when the sealing material 17 is a sealing film, sufficient mechanical protection is provided for the organic EL element 100. Therefore, it is preferable to provide such a protective film or protective plate.
- a glass plate, a polymer plate, a thinner polymer film, a metal plate, a thinner metal film, a polymer material film or a metal material film is applied.
- a polymer film because it is light and thin.
- the intermediate layer 1a containing the bipyridine derivative is formed on the transparent substrate 13 by an appropriate method such as an evaporation method so as to have a film thickness of 1 ⁇ m or less, preferably 10 nm to 100 nm.
- a conductive layer 1b made of silver (or an alloy containing silver as a main component) is formed on the intermediate layer 1a by an appropriate method such as vapor deposition so as to have a thickness of 12 nm or less, preferably 4 nm to 9 nm.
- the transparent electrode 1 to be the anode is produced.
- a hole injection layer 3 a, a hole transport layer 3 b, a light emitting layer 3 c, an electron transport layer 3 d, and an electron injection layer 3 e are formed in this order to form the light emitting functional layer 3.
- the film formation of each of these layers includes spin coating, casting, ink jet, vapor deposition, and printing, but vacuum vapor deposition is easy because a homogeneous film is easily obtained and pinholes are difficult to generate.
- the method or spin coating method is particularly preferred.
- different film forming methods may be applied for each layer. When a vapor deposition method is employed for forming each of these layers, the vapor deposition conditions vary depending on the type of compound used, etc., but generally a boat heating temperature of 50 ° C.
- each condition is desirable to select as appropriate within a deposition rate range of 0.01 nm / second to 50 nm / second, a substrate temperature of ⁇ 50 ° C. to 300 ° C., and a film thickness of 0.1 ⁇ m to 5 ⁇ m.
- the counter electrode 5a serving as a cathode is formed thereon by an appropriate film forming method such as a vapor deposition method or a sputtering method.
- the counter electrode 5 a is patterned in a shape in which a terminal portion is drawn from the upper side of the light emitting functional layer 3 to the periphery of the transparent substrate 13 while maintaining the insulating state with respect to the transparent electrode 1 by the light emitting functional layer 3.
- the organic EL element 100 is obtained.
- a sealing material 17 that covers at least the light emitting functional layer 3 is provided in a state where the terminal portions of the transparent electrode 1 and the counter electrode 5a in the organic EL element 100 are exposed.
- a desired organic EL element is obtained on the transparent substrate 13.
- the transparent substrate 13 is taken out from the vacuum atmosphere in the middle to perform different formations.
- a film method may be applied. At that time, it is necessary to consider that the work is performed in a dry inert gas atmosphere.
- the transparent electrode 1 as an anode has a positive polarity and the counter electrode 5a as a cathode has a negative polarity, and the voltage is 2V to 40V.
- Luminescence can be observed by applying a degree.
- An alternating voltage may be applied.
- the alternating current waveform to be applied may be arbitrary.
- the organic EL element 100 described above has a configuration in which the transparent electrode 1 having both conductivity and light transmittance according to the present invention is used as an anode, and a light emitting functional layer 3 and a counter electrode 5a serving as a cathode are provided on the transparent electrode 1. is there. Therefore, a sufficient voltage is applied between the transparent electrode 1 and the counter electrode 5a to realize high-luminance light emission in the organic EL element 100, and the extraction efficiency of the emitted light h from the transparent electrode 1 side is improved. Therefore, it is possible to increase the luminance. Further, it is possible to improve the light emission life by reducing the drive voltage for obtaining a predetermined luminance.
- FIG. 3 is a cross-sectional configuration diagram illustrating a second example of the organic EL element using the transparent electrode described above as an example of the electronic device of the present invention.
- the organic EL element 200 of the second example shown in this figure is different from the organic EL element 100 of the first example described with reference to FIG. 2 in that the transparent electrode 1 is used as a cathode.
- the transparent electrode 1 is used as a cathode.
- the organic EL element 200 shown in FIG. 3 is provided on the transparent substrate 13 and uses the transparent electrode 1 of the present invention described above as the transparent electrode 1 on the transparent substrate 13 as in the first example. .
- the organic EL element 200 is configured to extract the emitted light h from at least the transparent substrate 13 side.
- the transparent electrode 1 is used as a cathode (cathode).
- the counter electrode 5b is used as an anode.
- the layer structure of the organic EL element 200 configured as described above is not limited to the example described below, and may be a general layer structure as in the first example.
- an electron injection layer 3e / electron transport layer 3d / light emitting layer 3c / hole transport layer 3b / hole injection layer 3a are arranged in this order on the transparent electrode 1 functioning as a cathode.
- a stacked configuration is exemplified. However, it is essential to have at least the light emitting layer 3c made of an organic material.
- the light emitting functional layer 3 may employ various configurations as necessary, as described in the first example. In such a configuration, only the portion where the light emitting functional layer 3 is sandwiched between the transparent electrode 1 and the counter electrode 5 b becomes the light emitting region in the organic EL element 200 as in the first example.
- the auxiliary electrode 15 may be provided in contact with the conductive layer 1b of the transparent electrode 1 for the purpose of reducing the resistance of the transparent electrode 1. Similar to the example.
- the counter electrode 5b used as the anode is composed of a metal, an alloy, an organic or inorganic conductive compound, or a mixture thereof.
- metals such as gold (Au), oxide semiconductors such as copper iodide (CuI), ITO, ZnO, TiO 2 , and SnO 2 .
- the counter electrode 5b configured as described above can be produced by forming a thin film of these conductive materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the counter electrode 5b is preferably several hundred ⁇ / ⁇ or less, and the film thickness is usually selected in the range of 5 nm to 5 ⁇ m, preferably 5 nm to 200 nm.
- this organic EL element 200 is comprised so that the emitted light h can be taken out also from the counter electrode 5b side, as a material which comprises the counter electrode 5b, favorable light transmittance is mentioned among the electrically conductive materials mentioned above.
- a suitable conductive material is selected and used.
- the organic EL element 200 having the above configuration is sealed with the sealing material 17 in the same manner as in the first example for the purpose of preventing deterioration of the light emitting functional layer 3.
- the detailed structure of the constituent elements other than the counter electrode 5b used as the anode and the method for producing the organic EL element 200 are the same as in the first example. Therefore, detailed description is omitted.
- the organic EL element 200 described above has a configuration in which the transparent electrode 1 having both conductivity and light transmittance according to the present invention is used as a cathode, and the light emitting functional layer 3 and the counter electrode 5b serving as an anode are provided on the transparent electrode 1. is there. For this reason, as in the first example, a sufficient voltage is applied between the transparent electrode 1 and the counter electrode 5a to realize high-luminance light emission in the organic EL element 200, and light emitted from the transparent electrode 1 side. It is possible to increase the luminance by improving the extraction efficiency of h. Further, it is possible to improve the light emission life by reducing the drive voltage for obtaining a predetermined luminance.
- FIG. 4 is a cross-sectional configuration diagram showing a third example of the organic EL element using the transparent electrode described above as an example of the electronic device of the present invention.
- the organic EL element 300 of the third example shown in this figure is different from the organic EL element 100 of the first example described with reference to FIG. 2 in that a counter electrode 5c is provided on the substrate 131 side, and a light emitting functional layer is provided thereon. 3 and the transparent electrode 1 are stacked in this order.
- the detailed description of the same components as those in the first example will be omitted, and the characteristic configuration of the organic EL element 300 in the third example will be described.
- the organic EL element 300 shown in FIG. 4 is provided on a substrate 131, and the counter electrode 5c serving as an anode, the light emitting functional layer 3, and the transparent electrode 1 serving as a cathode are laminated in this order from the substrate 131 side. .
- the transparent electrode 1 of the present invention described above is used as the transparent electrode 1.
- the organic EL element 300 is configured to extract the emitted light h from at least the transparent electrode 1 side opposite to the substrate 131.
- the layer structure of the organic EL element 300 configured as described above is not limited to the example described below, and may be a general layer structure as in the first example.
- a configuration in which a hole injection layer 3a / a hole transport layer 3b / a light emitting layer 3c / an electron transport layer 3d are stacked in this order on the counter electrode 5c functioning as an anode is illustrated. Is done. However, it is essential to have at least the light emitting layer 3c configured using an organic material.
- the electron transport layer 3d also serves as the electron injection layer 3e, and is provided as an electron transport layer 3d having electron injection properties.
- the characteristic structure of the organic EL element 300 of the third example is that an electron transport layer 3d having an electron injection property is provided as the intermediate layer 1a in the transparent electrode 1. That is, in the third example, the transparent electrode 1 used as a cathode is composed of an intermediate layer 1a that also serves as an electron transporting layer 3d having an electron injecting property, and a conductive layer 1b provided thereon. It is.
- Such an electron transport layer 3d is configured by using the material constituting the intermediate layer 1a of the transparent electrode 1 described above.
- the light emitting functional layer 3 may employ various configurations as necessary as described in the first example.
- the electron transport also serving as the intermediate layer 1a of the transparent electrode 1 is used.
- No electron injection layer or hole blocking layer is provided between the layer 3d and the conductive layer 1b of the transparent electrode 1. In the configuration as described above, only the portion where the light emitting functional layer 3 is sandwiched between the transparent electrode 1 and the counter electrode 5c becomes the light emitting region in the organic EL element 300, as in the first example.
- the auxiliary electrode 15 may be provided in contact with the conductive layer 1b of the transparent electrode 1 for the purpose of reducing the resistance of the transparent electrode 1. The same as in the example.
- the counter electrode 5c used as the anode is composed of a metal, an alloy, an organic or inorganic conductive compound, or a mixture thereof.
- metals such as gold (Au), oxide semiconductors such as copper iodide (CuI), ITO, ZnO, TiO 2 , and SnO 2 .
- the counter electrode 5c configured as described above can be produced by forming a thin film of these conductive materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the counter electrode 5c is preferably several hundred ⁇ / ⁇ or less, and the film thickness is usually selected in the range of 5 nm to 5 ⁇ m, preferably 5 nm to 200 nm.
- this organic EL element 300 when this organic EL element 300 is comprised so that the emitted light h can be taken out also from the counter electrode 5c side, as a material which comprises the counter electrode 5c, it has the favorable light transmittance among the electrically conductive materials mentioned above.
- a suitable conductive material is selected and used.
- the substrate 131 is the same as the transparent substrate 13 described in the first example, and the surface facing the outside of the substrate 131 is the light extraction surface 131a.
- the electron transporting layer 3d having the electron injecting property constituting the uppermost part of the light emitting functional layer 3 is used as the intermediate layer 1a, and the conductive layer 1b is provided on the upper layer, thereby providing the intermediate layer 1a and The transparent electrode 1 composed of the upper conductive layer 1b is provided as a cathode.
- a sufficient voltage is applied between the transparent electrode 1 and the counter electrode 5c to realize high-luminance light emission in the organic EL element 300, while the transparent electrode 1 side. It is possible to increase the luminance by improving the extraction efficiency of the emitted light h from the light source. Further, it is possible to improve the light emission life by reducing the drive voltage for obtaining a predetermined luminance. Further, when the counter electrode 5c is light transmissive, the emitted light h can be extracted from the counter electrode 5c.
- the intermediate layer 1a of the transparent electrode 1 has been described as also serving as the electron transport layer 3d having electron injection properties.
- the present example is not limited to this, and the intermediate layer 1a is not limited thereto. May also serve as the electron transport layer 3d that does not have the electron injection property, or the intermediate layer 1a may serve as the electron injection layer instead of the electron transport layer.
- the intermediate layer 1a may be formed as an extremely thin film that does not affect the light emitting function of the organic EL element. In this case, the intermediate layer 1a has electron transport properties and electron injection properties. Not.
- the intermediate layer 1a of the transparent electrode 1 is formed as an ultrathin film that does not affect the light emitting function of the organic EL element
- the counter electrode on the substrate 131 side is used as a cathode
- the light emitting functional layer 3 is formed.
- the transparent electrode 1 may be an anode.
- the light emitting functional layer 3 includes, for example, an electron injection layer 3e / electron transport layer 3d / light emitting layer 3c / hole transport layer 3b / hole injection layer 3a in order from the counter electrode (cathode) side on the substrate 131. Is done.
- a transparent electrode 1 having a laminated structure of an extremely thin intermediate layer 1a and a conductive layer 1b is provided as an anode on the top.
- organic EL elements are surface light emitters as described above, they can be used as various light emission sources.
- lighting devices such as home lighting and interior lighting, backlights for clocks and liquid crystals, lighting for billboard advertisements, light sources for traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, Examples include, but are not limited to, a light source of an optical sensor, and can be effectively used as a backlight of a liquid crystal display device combined with a color filter and a light source for illumination.
- the organic EL element of the present invention may be used as a kind of lamp for illumination or exposure light source, a projection device for projecting an image, or a type for directly viewing a still image or a moving image. It may be used as a display device (display).
- the light emitting surface may be enlarged by so-called tiling, in which light emitting panels provided with organic EL elements are joined together in a plane.
- the drive method when used as a display device for moving image reproduction may be either a simple matrix (passive matrix) method or an active matrix method. Further, by using two or more kinds of the organic EL elements of the present invention having different emission colors, it is possible to produce a color or full-color display device.
- a lighting device will be described as an example of the application, and then a lighting device having a light emitting surface enlarged by tiling will be described.
- Lighting device-1 The lighting device according to the present invention has the organic EL element.
- the organic EL element used in the lighting device according to the present invention may be designed such that each organic EL element having the above-described configuration has a resonator structure.
- the purpose of use of the organic EL element configured to have a resonator structure includes a light source of an optical storage medium, a light source of an electrophotographic copying machine, a light source of an optical communication processor, a light source of an optical sensor, etc. It is not limited to. Moreover, you may use for the said use by making a laser oscillation.
- the material used for the organic EL element of the present invention can be applied to an organic EL element that emits substantially white light (also referred to as a white organic EL element).
- a plurality of light emitting materials can simultaneously emit a plurality of light emission colors to obtain white light emission by color mixing.
- the combination of a plurality of emission colors may include three emission maximum wavelengths of the three primary colors of red, green and blue, or two using the complementary colors such as blue and yellow, blue green and orange. The thing containing the light emission maximum wavelength may be used.
- a combination of light emitting materials for obtaining a plurality of emission colors includes a combination of a plurality of phosphorescent or fluorescent materials, a light emitting material that emits fluorescence or phosphorescence, and light from the light emitting material as excitation light. Any combination with a dye material that emits light may be used, but in a white organic EL element, a combination of a plurality of light-emitting dopants may be used.
- Such a white organic EL element is different from a configuration in which organic EL elements emitting each color are individually arranged in parallel to obtain white light emission, and the organic EL element itself emits white light. For this reason, a mask is not required for film formation of most layers constituting the element, and for example, an electrode film can be formed on one side by vapor deposition, casting, spin coating, ink jet, printing, etc., and productivity is improved. To do.
- a light emitting material used for the light emitting layer of such a white organic EL element For example, if it is a backlight in a liquid crystal display element, it will adapt to the wavelength range corresponding to CF (color filter) characteristic.
- any metal complex according to the present invention or a known light emitting material may be selected and combined to be whitened.
- the white organic EL element described above it is possible to produce a lighting device that emits substantially white light.
- FIG. 5 shows a cross-sectional configuration diagram of an illumination device in which a plurality of organic EL elements having the above-described configurations are used to increase the light emitting surface area.
- a plurality of light emitting panels 21 each having an organic EL element 100 provided on a transparent substrate 13 are arranged on a support substrate 23 (that is, tiling) to increase the area of the light emitting surface.
- the support substrate 23 may also serve as the sealing material 17, and each light-emitting panel 21 is tied with the organic EL element 100 sandwiched between the support substrate 23 and the transparent substrate 13 of the light-emitting panel 21. Ring.
- An adhesive 19 may be filled between the support substrate 23 and the transparent substrate 13, thereby sealing the organic EL element 100.
- the edge part of the transparent electrode 1 which is an anode, and the counter electrode 5a which is a cathode are exposed around the light emission panel 21. FIG. However, only the exposed part of the counter electrode 5a is shown in the drawing.
- each light emitting panel 21 is a light emitting area A, and a non-light emitting area B is generated between the light emitting panels 21.
- a light extraction member for increasing the light extraction amount from the non-light emitting region B may be provided in the non-light emitting region B of the light extraction surface 13a.
- a light collecting sheet or a light diffusion sheet can be used as the light extraction member.
- sample no. The transparent electrodes 1 to 17 were prepared so that the area of the conductive region was 5 cm ⁇ 5 cm.
- Sample No. In Nos. 1 to 4 a transparent electrode having a single layer structure was prepared, and Sample No. In Nos. 5 to 17, transparent electrodes having a laminated structure of an intermediate layer and a conductive layer were produced.
- a transparent electrode having a single layer structure was produced as follows. First, a transparent alkali-free glass substrate was fixed to a substrate holder of a commercially available vacuum deposition apparatus and attached to a vacuum tank of the vacuum deposition apparatus. Moreover, silver (Ag) was put into the resistance heating board made from tungsten, and it attached in the said vacuum chamber. Next, after reducing the vacuum chamber to 4 ⁇ 10 ⁇ 4 Pa, the resistance heating board is energized and heated, and a single layer made of silver is formed on the substrate at a deposition rate of 0.1 nm / second to 0.2 nm / second. A transparent electrode having a layer structure was formed. Sample No. The film thicknesses of the transparent electrodes 1 to 4 are values of 5 nm, 8 nm, 10 nm, and 15 nm, respectively, as shown in Table 1 below.
- Alq 3 shown in the following structural formula is formed in advance on a transparent non-alkali glass substrate by sputtering as an intermediate layer having a film thickness of 25 nm, and a conductive layer made of silver (Ag) having a film thickness of 8 nm is formed thereon.
- a transparent electrode was deposited to obtain a transparent electrode.
- Vapor deposition film formation of a conductive layer made of silver (Ag) was performed using Sample No. Performed in the same manner as in 1-4.
- Example No. Preparation of transparent electrode 6> A transparent non-alkali glass base material is fixed to a base material holder of a commercially available vacuum deposition apparatus, and ET-1 shown in the following structural formula is placed in a tantalum resistance heating board, and the substrate holder and the heating board are vacuumed. It attached to the 1st vacuum chamber of the vapor deposition apparatus. Moreover, silver (Ag) was put into the resistance heating board made from tungsten, and it attached in the 2nd vacuum chamber.
- the first vacuum chamber was depressurized to 4 ⁇ 10 ⁇ 4 Pa, and then heated by energizing the heating board containing ET-1, and the deposition rate was 0.1 nm / sec to 0.2 nm / sec.
- An intermediate layer made of ET-1 having a thickness of 25 nm was provided on the substrate.
- the base material formed up to the intermediate layer was transferred to the second vacuum chamber while being vacuumed, and the second vacuum chamber was depressurized to 4 ⁇ 10 ⁇ 4 Pa, and then the heating board containing silver was energized and heated. .
- a conductive layer made of silver having a film thickness of 8 nm was formed at a deposition rate of 0.1 nm / second to 0.2 nm / second, and a transparent electrode having a laminated structure of the intermediate layer and the conductive layer on the upper side was obtained. It was.
- Sample No. 7 to 14 Sample No. In the production of the transparent electrode 6, the material of the intermediate layer and the film thickness of the conductive layer were changed as shown in Table 1 below. Otherwise, sample no. In the same manner as the transparent electrode of No. 6, 7 to 14 transparent electrodes were prepared.
- Sample No. in the production of the transparent electrode 6 the base material was changed to PET (Polyethylene terephthalate), and the material of the intermediate layer was changed as shown in Table 1 below. Otherwise, sample no. In the same manner as in Sample 6, 15 to 17 transparent electrodes were prepared.
- Example No. Evaluation of transparent electrodes 1 to 17-1 Sample No. produced as described above. The light transmittance was measured for each of the transparent electrodes 1 to 17. The light transmittance was measured using a spectrophotometer (U-3300 manufactured by Hitachi, Ltd.) with the same substrate as the sample as the baseline. The results are shown in Table 1 below.
- Example No. Evaluation of transparent electrodes 1 to 17-2 Sample No. produced as described above. For each of the transparent electrodes 1 to 17, the sheet resistance value was measured. The sheet resistance value was measured using a resistivity meter (MCP-T610 manufactured by Mitsubishi Chemical Corporation) by a 4-terminal 4-probe method constant current application method. The results are shown in Table 1 below.
- sample No. Any of the transparent electrodes of the present invention in which a conductive layer mainly composed of silver (Ag) is provided on an intermediate layer using the bipyridine derivative represented by the general formula (1) of 7 to 17 is light transmissive. The rate is 59% or more, and the sheet resistance value is suppressed to 41 ⁇ / ⁇ or less. In contrast, sample no.
- the transparent electrodes 1 to 6 which are not of the constitution of the present invention had a light transmittance of less than 59% and a sheet resistance value of more than 41 ⁇ / ⁇ .
- the transparent electrode of the configuration of the present invention has both high light transmittance and conductivity.
- Example 1 A double-sided light emitting organic EL device using each of the transparent electrodes 1 to 17 as an anode was produced. The manufacturing procedure will be described with reference to FIG.
- the transparent substrate 13 on which each of the transparent electrodes 1 to 17 was formed was fixed to a substrate holder of a commercially available vacuum vapor deposition apparatus, and a vapor deposition mask was disposed opposite to the surface on which the transparent electrode 1 was formed.
- Each of the heating boards in the vacuum vapor deposition apparatus was filled with each material constituting the light emitting functional layer 3 in an optimum amount for forming each layer.
- the heating board used what was produced with the resistance heating material made from tungsten.
- each layer was formed as follows by sequentially energizing and heating the heating board containing each material.
- a heating board containing ⁇ -NPD represented by the following structural formula is energized and heated to provide a hole transport layer that serves as both a hole injection layer and a hole transport layer made of ⁇ -NPD.
- the injection layer 31 was formed on the conductive layer 1 b constituting the transparent electrode 1. At this time, the deposition rate was 0.1 nm / second to 0.2 nm / second, and the film thickness was 20 nm.
- each of the heating board containing the host material H4 having the structural formula shown above and the heating board containing the phosphorescent compound Ir-4 having the structural formula shown above were energized independently to each other.
- a light emitting layer 32 composed of H4 and the phosphorescent compound Ir-4 was formed on the hole transport / injection layer 31.
- the film thickness was 30 nm.
- a hole-blocking layer 33 made of BAlq was formed on the light-emitting layer 32 by energizing and heating a heating board containing BAlq represented by the following structural formula as a hole-blocking material.
- the deposition rate was 0.1 nm / second to 0.2 nm / second, and the film thickness was 10 nm.
- a heating board containing ET-2 represented by the following structural formula and a heating board containing potassium fluoride are energized independently to transport electrons composed of ET-2 and potassium fluoride.
- a layer 34 was formed on the hole blocking layer 33.
- the film thickness was 30 nm.
- a heating board containing potassium fluoride as an electron injection material was energized and heated, and an electron injection layer 35 made of potassium fluoride was formed on the electron transport layer 34.
- the deposition rate was 0.01 nm / sec to 0.02 nm / sec, and the film thickness was 1 nm.
- the transparent substrate 13 formed up to the electron injection layer 35 was transferred from the vapor deposition chamber of the vacuum vapor deposition apparatus to the processing chamber of the sputtering apparatus to which the ITO target as a counter electrode material was attached while maintaining the vacuum state.
- a film was formed at a film formation rate of 0.3 nm / second to 0.5 nm / second, and a light transmissive counter electrode 5a made of ITO having a film thickness of 150 nm was formed as a cathode.
- the organic EL element 400 was formed on the transparent substrate 13.
- the organic EL element 400 is covered with a sealing material 17 made of a glass substrate having a thickness of 300 ⁇ m, and the adhesive 19 (sealing material) is interposed between the sealing material 17 and the transparent substrate 13 so as to surround the organic EL element 400. ).
- a sealing material 17 made of a glass substrate having a thickness of 300 ⁇ m
- the adhesive 19 (sealing material) is interposed between the sealing material 17 and the transparent substrate 13 so as to surround the organic EL element 400. ).
- an epoxy photocurable adhesive (Lux Track LC0629B manufactured by Toagosei Co., Ltd.) was used.
- the adhesive 19 filled between the sealing material 17 and the transparent substrate 13 is irradiated with UV light from the glass substrate (sealing material 17) side to cure the adhesive 19 and seal the organic EL element 400. Stopped.
- an evaporation mask is used to form each layer, and the central 4.5 cm ⁇ 4.5 cm of the 5 cm ⁇ 5 cm transparent substrate 13 is defined as the light emitting region A, and the entire circumference of the light emitting region A is formed.
- a non-light emitting region B having a width of 0.25 cm was provided.
- the transparent electrode 1 serving as the anode and the counter electrode 5a serving as the cathode are insulated from each other by the light emitting functional layer 3 from the hole transport / injection layer 31 to the electron injection layer 35. The part was formed in a drawn shape.
- the organic EL element 400 is provided on the transparent substrate 13, and this is sealed with the sealing material 17 and the adhesive 19. 1 to 17 light emitting panels were obtained. In each of these light emitting panels, each color of emitted light h generated in the light emitting layer 32 is extracted from both the transparent electrode 1 side, that is, the transparent substrate 13 side, and the counter electrode 5a side, that is, the sealing material 17 side.
- Example No. Evaluation of light emitting panels 1 to 17-1 The prepared sample No. The light transmittance of the light emitting panels 1 to 17 was measured. The light transmittance was measured using a spectrophotometer (U-3300 manufactured by Hitachi, Ltd.) with the same substrate as the sample as the baseline. The results are shown in Table 2 below.
- Example No. Evaluation of light emitting panels 1 to 17-2> The prepared sample No. The driving voltage was measured for the light emitting panels 1 to 17. In the measurement of the driving voltage, the front luminance on both the transparent electrode 1 side (that is, the transparent substrate 13 side) and the counter electrode 5a side (that is, the sealing material 17 side) of each light-emitting panel is measured, and the sum is The voltage at 1000 cd / m 2 was measured as the driving voltage. For the measurement of luminance, a spectral radiance meter CS-1000 (manufactured by Konica Minolta Sensing) was used. It represents that it is so preferable that the numerical value of the obtained drive voltage is small. The results are shown in Table 2 below.
- the light-emitting panels using the transparent electrodes 1 to 6 that are not of the present invention as the anode of the organic EL element have a light transmittance of less than 55% and do not emit light even when a voltage is applied. Even when light was emitted, there was a drive voltage exceeding 4.2V.
- the organic EL element using the transparent electrode having the configuration of the present invention can emit light with high luminance at a low driving voltage.
- the driving voltage for obtaining the predetermined luminance can be reduced and the light emission life can be improved.
- the present invention is suitable for providing a transparent electrode having sufficient conductivity and light transmission, an electronic device having the transparent electrode, and an organic electroluminescence element.
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Abstract
Description
そこで、電気伝導率の高い銀とMgとの合金を用いて薄膜を構成することで透過率と導電性の両立を図った技術や、安価で入手容易なZnやSnを原料として薄膜を構成する技術が提案されている(例えば、特許文献3,4参照)。
導電性層と、
前記導電性層に隣接して設けられる中間層と、を備える透明電極において、
前記中間層には下記一般式(1)で表されるビピリジン誘導体が含有され、
前記導電性層は銀を主成分として構成されていることを特徴とする透明電極が提供される。
上記透明電極を備えることを特徴とする電子デバイスが提供される。
上記透明電極を備えることを特徴とする有機エレクトロルミネッセンス素子が提供される。
1.透明電極
2.透明電極の用途
3.有機EL素子の第1例
4.有機EL素子の第2例
5.有機EL素子の第3例
6.有機EL素子の用途
7.照明装置-1
8.照明装置-2
図1は、実施形態の透明電極の構成を示す断面模式図である。この図に示すように、透明電極1は、中間層1aと、この上部に成膜された導電性層1bとを積層した2層構造であり、例えば基材11の上部に、中間層1a、導電性層1bの順に設けられている。このうち中間層1aはビピリジン誘導体が含有されて構成されている層であり、導電性層1bは銀を主成分として構成されている層である。なお、本発明において導電性層1bの主成分とは、導電性層1b中の含有量が98質量%以上であることをいう。
本発明の透明電極1が形成される基材11は、例えばガラス、プラスチック等を挙げることができるが、これらに限定されない。また、基材11は透明であっても不透明であってもよい。本発明の透明電極1が、基材11側から光を取り出す電子デバイスに用いられる場合には、基材11は透明であることが好ましい。好ましく用いられる透明な基材11としては、ガラス、石英、透明樹脂フィルムを挙げることができる。
中間層1aは、下記一般式(1)で表されるビピリジン誘導体を用いて構成された層である。このような中間層1aが基材11上に成膜されたものである場合、その成膜方法としては、塗布法、インクジェット法、コーティング法、ディップ法などのウェットプロセスを用いる方法や、蒸着法(抵抗加熱、EB法など)、スパッタ法、CVD法などのドライプロセスを用いる方法などが挙げられる。なかでも蒸着法が好ましく適用される。
本発明の透明電極において、中間層に含有されるビピリジン誘導体は下記一般式(1)で表される。
一般式(1)において、Rで表される置換基としては、アルキル基(例えば、メチル基、エチル基、プロピル基、イソプロピル基、tert-ブチル基、ペンチル基、ヘキシル基、オクチル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基等)、シクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基等)、アルケニル基(例えば、ビニル基、アリル基等)、アルキニル基(例えば、エチニル基、プロパルギル基等)、芳香族炭化水素基(芳香族炭素環基、アリール基等ともいい、例えば、フェニル基、p-クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基等)、芳香族複素環基(例えば、フリル基、チエニル基、ピリジル基、ピリダジニル基、ピリミジニル基、ピラジニル基、トリアジニル基、イミダゾリル基、ピラゾリル基、チアゾリル基、キナゾリニル基、カルバゾリル基、カルボリニル基、ジアザカルバゾリル基(前記カルボリニル基のカルボリン環を構成する任意の炭素原子の一つが窒素原子で置き換わったものを示す)、フタラジニル基等)、複素環基(例えば、ピロリジル基、イミダゾリジル基、モルホリル基、オキサゾリジル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)、シクロアルコキシ基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基等)、アリールオキシ基(例えば、フェノキシ基、ナフチルオキシ基等)、アルキルチオ基(例えば、メチルチオ基、エチルチオ基、プロピルチオ基、ペンチルチオ基、ヘキシルチオ基、オクチルチオ基、ドデシルチオ基等)、シクロアルキルチオ基(例えば、シクロペンチルチオ基、シクロヘキシルチオ基等)、アリールチオ基(例えば、フェニルチオ基、ナフチルチオ基等)、アルコキシカルボニル基(例えば、メチルオキシカルボニル基、エチルオキシカルボニル基、ブチルオキシカルボニル基、オクチルオキシカルボニル基、ドデシルオキシカルボニル基等)、アリールオキシカルボニル基(例えば、フェニルオキシカルボニル基、ナフチルオキシカルボニル基等)、スルファモイル基(例えば、アミノスルホニル基、メチルアミノスルホニル基、ジメチルアミノスルホニル基、ブチルアミノスルホニル基、ヘキシルアミノスルホニル基、シクロヘキシルアミノスルホニル基、オクチルアミノスルホニル基、ドデシルアミノスルホニル基、フェニルアミノスルホニル基、ナフチルアミノスルホニル基、2-ピリジルアミノスルホニル基等)、アシル基(例えば、アセチル基、エチルカルボニル基、プロピルカルボニル基、ペンチルカルボニル基、シクロヘキシルカルボニル基、オクチルカルボニル基、2-エチルヘキシルカルボニル基、ドデシルカルボニル基、フェニルカルボニル基、ナフチルカルボニル基、ピリジルカルボニル基等)、アシルオキシ基(例えば、アセチルオキシ基、エチルカルボニルオキシ基、ブチルカルボニルオキシ基、オクチルカルボニルオキシ基、ドデシルカルボニルオキシ基、フェニルカルボニルオキシ基等)、アミド基(例えば、メチルカルボニルアミノ基、エチルカルボニルアミノ基、ジメチルカルボニルアミノ基、プロピルカルボニルアミノ基、ペンチルカルボニルアミノ基、シクロヘキシルカルボニルアミノ基、2-エチルヘキシルカルボニルアミノ基、オクチルカルボニルアミノ基、ドデシルカルボニルアミノ基、フェニルカルボニルアミノ基、ナフチルカルボニルアミノ基等)、カルバモイル基(例えば、アミノカルボニル基、メチルアミノカルボニル基、ジメチルアミノカルボニル基、プロピルアミノカルボニル基、ペンチルアミノカルボニル基、シクロヘキシルアミノカルボニル基、オクチルアミノカルボニル基、2-エチルヘキシルアミノカルボニル基、ドデシルアミノカルボニル基、フェニルアミノカルボニル基、ナフチルアミノカルボニル基、2-ピリジルアミノカルボニル基等)、ウレイド基(例えば、メチルウレイド基、エチルウレイド基、ペンチルウレイド基、シクロヘキシルウレイド基、オクチルウレイド基、ドデシルウレイド基、フェニルウレイド基ナフチルウレイド基、2-ピリジルアミノウレイド基等)、スルフィニル基(例えば、メチルスルフィニル基、エチルスルフィニル基、ブチルスルフィニル基、シクロヘキシルスルフィニル基、2-エチルヘキシルスルフィニル基、ドデシルスルフィニル基、フェニルスルフィニル基、ナフチルスルフィニル基、2-ピリジルスルフィニル基等)、アルキルスルホニル基(例えば、メチルスルホニル基、エチルスルホニル基、ブチルスルホニル基、シクロヘキシルスルホニル基、2-エチルヘキシルスルホニル基、ドデシルスルホニル基等)、アリールスルホニル基またはヘテロアリールスルホニル基(例えば、フェニルスルホニル基、ナフチルスルホニル基、2-ピリジルスルホニル基等)、アミノ基(例えば、アミノ基、エチルアミノ基、ジメチルアミノ基、ブチルアミノ基、シクロペンチルアミノ基、2-エチルヘキシルアミノ基、ドデシルアミノ基、アニリノ基、ナフチルアミノ基、2-ピリジルアミノ基、ピペリジル基(ピペリジニル基ともいう)、2,2,6,6-テトラメチルピペリジニル基等)、ハロゲン原子(例えば、フッ素原子、塩素原子、臭素原子等)、フッ化炭化水素基(例えば、フルオロメチル基、トリフルオロメチル基、ペンタフルオロエチル基、ペンタフルオロフェニル基等)、シアノ基、ニトロ基、ヒドロキシ基、メルカプト基、シリル基(例えば、トリメチルシリル基、トリイソプロピルシリル基、トリフェニルシリル基、フェニルジエチルシリル基等)、リン酸エステル基(例えば、ジヘキシルホスホリル基等)、亜リン酸エステル基(例えばジフェニルホスフィニル基等)、ホスホノ基等が挙げられる。
一般式(1)においてArで表される芳香族炭化水素環としては、ベンゼン環、ビフェニル環、ナフタレン環、アズレン環、アントラセン環、フェナントレン環、ピレン環、クリセン環、ナフタセン環、トリフェニレン環、o-テルフェニル環、m-テルフェニル環、p-テルフェニル環、アセナフテン環、コロネン環、フルオレン環、フルオラントレン環、ナフタセン環、ペンタセン環、ペリレン環、ペンタフェン環、ピセン環、ピレン環、ピラントレン環、アンスラアントレン環等が挙げられる。
また、一般式(1)においてArで表される芳香族複素環としては、フラン環、チオフェン環、オキサゾール環、ピロール環、ピリジン環、ピリダジン環、ピリミジン環、ピラジン環、トリアジン環、ベンゾイミダゾール環、オキサジアゾール環、トリアゾール環、イミダゾール環、ピラゾール環、チアゾール環、インドール環、ベンゾイミダゾール環、ベンゾチアゾール環、ベンゾオキサゾール環、キノキサリン環、キナゾリン環、フタラジン環、カルバゾール環、カルボリン環、アザカルバゾール環等が挙げられる。
また、一般式(1)においてArで表される環が有していても良い置換基としては、アルキル基(例えば、メチル基、エチル基、プロピル基、イソプロピル基、tert-ブチル基、ペンチル基、ヘキシル基、オクチル基、ドデシル基、トリデシル基、テトラデシル基、ペンタデシル基等)、シクロアルキル基(例えば、シクロペンチル基、シクロヘキシル基等)、アルケニル基(例えば、ビニル基、アリル基等)、アルキニル基(例えば、エチニル基、プロパルギル基等)、芳香族炭化水素基(芳香族炭素環基、アリール基等ともいい、例えば、フェニル基、p-クロロフェニル基、メシチル基、トリル基、キシリル基、ナフチル基、アントリル基、アズレニル基、アセナフテニル基、フルオレニル基、フェナントリル基、インデニル基、ピレニル基、ビフェニリル基等)、芳香族複素環基(例えば、フリル基、チエニル基、ピリジル基、ピリダジニル基、ピリミジニル基、ピラジニル基、トリアジニル基、イミダゾリル基、ピラゾリル基、チアゾリル基、キナゾリニル基、カルバゾリル基、カルボリニル基、ジアザカルバゾリル基(前記カルボリニル基のカルボリン環を構成する任意の炭素原子の一つが窒素原子で置き換わったものを示す)、フタラジニル基等)、複素環基(例えば、ピロリジル基、イミダゾリジル基、モルホリル基、オキサゾリジル基等)、アルコキシ基(例えば、メトキシ基、エトキシ基、プロピルオキシ基、ペンチルオキシ基、ヘキシルオキシ基、オクチルオキシ基、ドデシルオキシ基等)、シクロアルコキシ基(例えば、シクロペンチルオキシ基、シクロヘキシルオキシ基等)、アリールオキシ基(例えば、フェノキシ基、ナフチルオキシ基等)、アルキルチオ基(例えば、メチルチオ基、エチルチオ基、プロピルチオ基、ペンチルチオ基、ヘキシルチオ基、オクチルチオ基、ドデシルチオ基等)、シクロアルキルチオ基(例えば、シクロペンチルチオ基、シクロヘキシルチオ基等)、アリールチオ基(例えば、フェニルチオ基、ナフチルチオ基等)、アルコキシカルボニル基(例えば、メチルオキシカルボニル基、エチルオキシカルボニル基、ブチルオキシカルボニル基、オクチルオキシカルボニル基、ドデシルオキシカルボニル基等)、アリールオキシカルボニル基(例えば、フェニルオキシカルボニル基、ナフチルオキシカルボニル基等)、スルファモイル基(例えば、アミノスルホニル基、メチルアミノスルホニル基、ジメチルアミノスルホニル基、ブチルアミノスルホニル基、ヘキシルアミノスルホニル基、シクロヘキシルアミノスルホニル基、オクチルアミノスルホニル基、ドデシルアミノスルホニル基、フェニルアミノスルホニル基、ナフチルアミノスルホニル基、2-ピリジルアミノスルホニル基等)、アシル基(例えば、アセチル基、エチルカルボニル基、プロピルカルボニル基、ペンチルカルボニル基、シクロヘキシルカルボニル基、オクチルカルボニル基、2-エチルヘキシルカルボニル基、ドデシルカルボニル基、フェニルカルボニル基、ナフチルカルボニル基、ピリジルカルボニル基等)、アシルオキシ基(例えば、アセチルオキシ基、エチルカルボニルオキシ基、ブチルカルボニルオキシ基、オクチルカルボニルオキシ基、ドデシルカルボニルオキシ基、フェニルカルボニルオキシ基等)、アミド基(例えば、メチルカルボニルアミノ基、エチルカルボニルアミノ基、ジメチルカルボニルアミノ基、プロピルカルボニルアミノ基、ペンチルカルボニルアミノ基、シクロヘキシルカルボニルアミノ基、2-エチルヘキシルカルボニルアミノ基、オクチルカルボニルアミノ基、ドデシルカルボニルアミノ基、フェニルカルボニルアミノ基、ナフチルカルボニルアミノ基等)、カルバモイル基(例えば、アミノカルボニル基、メチルアミノカルボニル基、ジメチルアミノカルボニル基、プロピルアミノカルボニル基、ペンチルアミノカルボニル基、シクロヘキシルアミノカルボニル基、オクチルアミノカルボニル基、2-エチルヘキシルアミノカルボニル基、ドデシルアミノカルボニル基、フェニルアミノカルボニル基、ナフチルアミノカルボニル基、2-ピリジルアミノカルボニル基等)、ウレイド基(例えば、メチルウレイド基、エチルウレイド基、ペンチルウレイド基、シクロヘキシルウレイド基、オクチルウレイド基、ドデシルウレイド基、フェニルウレイド基ナフチルウレイド基、2-ピリジルアミノウレイド基等)、スルフィニル基(例えば、メチルスルフィニル基、エチルスルフィニル基、ブチルスルフィニル基、シクロヘキシルスルフィニル基、2-エチルヘキシルスルフィニル基、ドデシルスルフィニル基、フェニルスルフィニル基、ナフチルスルフィニル基、2-ピリジルスルフィニル基等)、アルキルスルホニル基(例えば、メチルスルホニル基、エチルスルホニル基、ブチルスルホニル基、シクロヘキシルスルホニル基、2-エチルヘキシルスルホニル基、ドデシルスルホニル基等)、アリールスルホニル基またはヘテロアリールスルホニル基(例えば、フェニルスルホニル基、ナフチルスルホニル基、2-ピリジルスルホニル基等)、アミノ基(例えば、アミノ基、エチルアミノ基、ジメチルアミノ基、ブチルアミノ基、シクロペンチルアミノ基、2-エチルヘキシルアミノ基、ドデシルアミノ基、アニリノ基、ナフチルアミノ基、2-ピリジルアミノ基、ピペリジル基(ピペリジニル基ともいう)、2,2,6,6-テトラメチルピペリジニル基等)、ハロゲン原子(例えば、フッ素原子、塩素原子、臭素原子等)、フッ化炭化水素基(例えば、フルオロメチル基、トリフルオロメチル基、ペンタフルオロエチル基、ペンタフルオロフェニル基等)、シアノ基、ニトロ基、ヒドロキシ基、メルカプト基、シリル基(例えば、トリメチルシリル基、トリイソプロピルシリル基、トリフェニルシリル基、フェニルジエチルシリル基等)、リン酸エステル基(例えば、ジヘキシルホスホリル基等)、亜リン酸エステル基(例えばジフェニルホスフィニル基等)、ホスホノ基等が挙げられる。
一般式(1)で表されるビピリジン誘導体は、更に下記一般式(2)で表されることが好ましい。
一般式(2)においてRで表される置換基としては、上記した一般式(1)においてRで表される置換基と同様のものを挙げることができる。
一般式(2)においてArで表される置換又は無置換の芳香族炭化水素環としては、上記した一般式(1)においてArで表される置換又は無置換の芳香族炭化水素環と同様のものを挙げることができる。
一般式(2)においてArで表される置換又は無置換の芳香族複素環としては、上記した一般式(1)においてArで表される置換又は無置換の芳香族複素環と同様のものを挙げることができる。
一般式(1)で表されるビピリジン誘導体は、更に下記一般式(3)又は(4)で表されるターピリジン誘導体であることが好ましい。
一般式(3)においてRで表される置換基としては、上記した一般式(1)においてRで表される置換基と同様のものを挙げることができる。
一般式(3)においてArで表される置換又は無置換の芳香族炭化水素環としては、上記した一般式(1)においてArで表される置換又は無置換の芳香族炭化水素環と同様のものを挙げることができる。
一般式(3)においてArで表される置換又は無置換の芳香族複素環としては、上記した一般式(1)においてArで表される置換又は無置換の芳香族複素環と同様のものを挙げることができる。
一般式(4)においてRで表される置換基としては、上記した一般式(1)においてRで表される置換基と同様のものを挙げることができる。
一般式(4)においてArで表される置換又は無置換の芳香族炭化水素環としては、上記した一般式(1)においてArで表される置換又は無置換の芳香族炭化水素環と同様のものを挙げることができる。
一般式(4)においてArで表される置換又は無置換の芳香族複素環としては、上記した一般式(1)においてArで表される置換又は無置換の芳香族複素環と同様のものを挙げることができる。
以下に、本発明に係る一般式(1)、(2)、(3)又は(4)で表される化合物の具体例を示すが、これらに限定されない。
導電性層1bは、銀を主成分として構成されている層であって、中間層1a上に成膜された層である。このような導電性層1bの成膜方法としては、塗布法、インクジェット法、コーティング法、ディップ法などのウェットプロセスを用いる方法や、蒸着法(抵抗加熱、EB法など)、スパッタ法、CVD法などのドライプロセスを用いる方法などが挙げられる。なかでも蒸着法が好ましく適用される。また導電性層1bは、中間層1a上に成膜されることにより、導電性層成膜後の高温アニール処理(例えば、150℃以上の加熱プロセス)等がなくても十分に導電性を有することを特徴とするが、必要に応じて、成膜後に高温アニール処理等を行ったものであっても良い。
以上のような構成の透明電極1は、一般式(1)で表されるビピリジン誘導体を用いて構成された中間層1a上に、銀を主成分として構成されている導電性層1bを設けた構成である。これにより、中間層1aの上部に導電性層1bを成膜する際には、導電性層1bを構成する銀原子が中間層1aを構成する一般式(1)で表されるビピリジン誘導体と相互作用し、銀原子の中間層1a表面においての拡散距離が減少し、銀の凝集が抑えられる。
上述した構成の透明電極1は、各種電子デバイスに用いることができる。電子デバイスの例としては、有機EL素子、LED(light Emitting Diode)、液晶素子、太陽電池、タッチパネル等が挙げられ、これらの電子デバイスにおいて光透過性を必要とされる電極部材として、上述の透明電極1を用いることができる。
以下では、用途の一例として、透明電極を用いた有機EL素子の実施の形態を説明する。
<有機EL素子100の構成>
図2は、本発明の電子デバイスの一例として、上述した透明電極1を用いた有機EL素子の第1例を示す断面構成図である。以下にこの図に基づいて有機EL素子の構成を説明する。
透明基板13は、先に説明した本発明の透明電極1が設けられる基材11であり、先に説明した基材11のうち光透過性を有する透明な基材11が用いられる。
透明電極1は、先に説明した本発明の透明電極1であり、透明基板13側から順に中間層1aおよび導電性層1bを順に成膜した構成である。ここでは特に、透明電極1はアノードとして機能するものであり、導電性層1bが実質的なアノードとなる。
対向電極5aは、発光機能層3に電子を供給するカソードとして機能する電極膜であり、金属、合金、有機若しくは無機の導電性化合物、又はこれらの混合物等から構成されている。具体的には、アルミニウム、銀、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、インジウム、リチウム/アルミニウム混合物、希土類金属、ITO、ZnO、TiO2、SnO2等の酸化物半導体などが挙げられる。
本発明に用いられる発光層3cは、発光材料として燐光発光化合物が含有されている。
発光層3cに含有されるホスト化合物としては、室温(25℃)における燐光発光の燐光量子収率が0.1未満の化合物が好ましい。さらに好ましくは燐光量子収率が0.01未満である。また、発光層3cに含有される化合物の中で、その層中での体積比が50%以上であることが好ましい。
本発明で用いることのできる発光材料としては、燐光発光性化合物(燐光性化合物、燐光発光材料ともいう)が挙げられる。
発光層3cに含まれる化合物(燐光発光性化合物)は、下記一般式(A)で表される化合物であることが好ましい。
一般式(A)で表される化合物の中でも、下記一般式(B)で表される化合物であることがさらに好ましい。
上記一般式(B)で表される化合物の好ましい態様の一つとして、下記一般式(C)で表される化合物が挙げられる。
蛍光発光材料としては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素、または希土類錯体系蛍光体等が挙げられる。
注入層とは、駆動電圧低下や発光輝度向上のために電極と発光層3cの間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123~166頁)に詳細に記載されており、正孔注入層3aと電子注入層3eとがある。
正孔輸送層3bは、正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層3a、電子阻止層も正孔輸送層3bに含まれる。正孔輸送層3bは単層または複数層設けることができる。
電子輸送層3dは、電子を輸送する機能を有する材料からなり、広い意味で電子注入層3e、正孔阻止層(図示せず)も電子輸送層3dに含まれる。電子輸送層3dは単層構造または複数層の積層構造として設けることができる。
阻止層は、上記の如く有機化合物薄膜の基本構成層の他に、必要に応じて設けられるものである。例えば、特開平11-204258号公報、同11-204359号公報、及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。
補助電極15は、透明電極1の抵抗を下げる目的で設けられるものであって、透明電極1の導電性層1bに接して設けられる。補助電極15を形成する材料は、金、白金、銀、銅、アルミニウム等の抵抗が低い金属が好ましい。これらの金属は光透過性が低いため、光取り出し面13aからの発光光hの取り出しの影響のない範囲でパターン形成される。このような補助電極15の形成方法としては、蒸着法、スパッタリング法、印刷法、インクジェット法、エアロゾルジェット法などが挙げられる。補助電極15の線幅は、光を取り出す開口率の観点から50μm以下であることが好ましく、補助電極15の厚さは、導電性の観点から1μm以上であることが好ましい。
封止材17は、有機EL素子100を覆うものであって、板状(フィルム状)の封止部材であって接着剤19によって透明基板13側に固定されるものであっても良く、封止膜であっても良い。このような封止材17は、有機EL素子100における透明電極1および対向電極5aの端子部分を露出させる状態で、少なくとも発光機能層3を覆う状態で設けられている。また封止材17に電極を設け、有機EL素子100の透明電極1および対向電極5aの端子部分と、この電極とを導通させるように構成されていても良い。
尚、ここでの図示は省略したが、透明基板13との間に有機EL素子100および封止材17を挟んで保護膜もしくは保護板を設けても良い。この保護膜もしくは保護板は、有機EL素子100を機械的に保護するためのものであり、特に封止材17が封止膜である場合には、有機EL素子100に対する機械的な保護が十分ではないため、このような保護膜もしくは保護板を設けることが好ましい。
ここでは一例として、図2に示す有機EL素子100の製造方法を説明する。
以上説明した有機EL素子100は、本発明の導電性と光透過性とを兼ね備えた透明電極1をアノードとして用い、この上部に発光機能層3とカソードとなる対向電極5aとを設けた構成である。このため、透明電極1と対向電極5aとの間に十分な電圧を印加して有機EL素子100での高輝度発光を実現しつつ、透明電極1側からの発光光hの取り出し効率が向上することによる高輝度化を図ることが可能である。さらに、所定輝度を得るための駆動電圧の低減による発光寿命の向上を図ることも可能になる。
<有機EL素子の構成>
図3は、本発明の電子デバイスの一例として、上述した透明電極を用いた有機EL素子の第2例を示す断面構成図である。この図に示す第2例の有機EL素子200が、図2を用いて説明した第1例の有機EL素子100と異なるところは、透明電極1をカソードとして用いるところにある。以下、第1例と同様の構成要素についての重複する詳細な説明は省略し、第2例の有機EL素子200の特徴的な構成を説明する。
以上説明した有機EL素子200は、本発明の導電性と光透過性とを兼ね備えた透明電極1をカソードとして用い、この上部に発光機能層3とアノードとなる対向電極5bとを設けた構成である。このため、第1例と同様に、透明電極1と対向電極5aとの間に十分な電圧を印加して有機EL素子200での高輝度発光を実現しつつ、透明電極1側からの発光光hの取り出し効率が向上することによる高輝度化を図ることが可能である。さらに、所定輝度を得るための駆動電圧の低減による発光寿命の向上を図ることも可能になる。
<有機EL素子の構成>
図4は、本発明の電子デバイスの一例として、上述した透明電極を用いた有機EL素子の第3例を示す断面構成図である。この図に示す第3例の有機EL素子300が、図2を用いて説明した第1例の有機EL素子100と異なるところは、基板131側に対向電極5cを設け、この上部に発光機能層3と透明電極1とをこの順に積層したところにある。以下、第1例と同様の構成要素についての重複する詳細な説明は省略し、第3例の有機EL素子300の特徴的な構成を説明する。
以上説明した有機EL素子300は、発光機能層3の最上部を構成する電子注入性を有する電子輸送層3dを中間層1aとし、この上部に導電性層1bを設けることにより、中間層1aとこの上部の導電性層1bとからなる透明電極1をカソードとして設けた構成である。このため、第1例および第2例と同様に、透明電極1と対向電極5cとの間に十分な電圧を印加して有機EL素子300での高輝度発光を実現しつつ、透明電極1側からの発光光hの取り出し効率が向上することによる高輝度化を図ることが可能である。さらに、所定輝度を得るための駆動電圧の低減による発光寿命の向上を図ることも可能になる。また、対向電極5cが光透過性を有する場合には、対向電極5cからも発光光hを取り出すことができる。
上述した各構成の有機EL素子は、上述したように面発光体であるため各種の発光光源として用いることができる。例えば、家庭用照明や車内照明などの照明装置、時計や液晶用のバックライト、看板広告用照明、信号機の光源、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるが、これに限定するものではなく、特にカラーフィルターと組み合わせた液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。
本発明に係る照明装置は、上記有機EL素子を有する。
図5には、上記各構成の有機EL素子を複数用いて発光面を大面積化した照明装置の断面構成図を示す。この図に示す照明装置は、例えば透明基板13上に有機EL素子100を設けた複数の発光パネル21を、支持基板23上に複数配列する(すなわちタイリングする)ことによって発光面を大面積化した構成である。支持基板23は、封止材17を兼ねるものであっても良く、この支持基板23と、発光パネル21の透明基板13との間に有機EL素子100を挟持する状態で各発光パネル21をタイリングする。支持基板23と透明基板13との間には接着剤19を充填し、これによって有機EL素子100を封止しても良い。尚、発光パネル21の周囲には、アノードである透明電極1およびカソードである対向電極5aの端部を露出させておく。ただし、図面においては対向電極5aの露出部分のみを図示した。
以下に説明するように、試料No.1~17の透明電極を、導電性領域の面積が5cm×5cmとなるように作製した。試料No.1~4では、単層構造の透明電極を作製し、試料No.5~17では、中間層と導電性層との積層構造の透明電極を作製した。
試料No.1~4のそれぞれにおいて、単層構造の透明電極を以下のように作製した。先ず、透明な無アルカリガラス製の基材を、市販の真空蒸着装置の基材ホルダーに固定し、真空蒸着装置の真空槽に取り付けた。またタングステン製の抵抗加熱ボードに銀(Ag)を入れ、当該真空槽内に取り付けた。次に、真空槽を4×10-4Paまで減圧した後、抵抗加熱ボードを通電して加熱し、蒸着速度0.1nm/秒~0.2nm/秒で、基材上に銀からなる単層構造の透明電極を形成した。試料No.1~4における透明電極の各膜厚は5nm、8nm、10nm、15nmの各値であり、下記表1に記載の通りである。
透明な無アルカリガラス製の基材に、予め下記構造式に示すAlq3をスパッタ法により膜厚25nmの中間層として成膜し、この上部に膜厚8nmの銀(Ag)からなる導電性層を蒸着成膜して透明電極を得た。銀(Ag)からなる導電性層の蒸着成膜は、試料No.1~4と同様に行った。
透明な無アルカリガラス製の基材を市販の真空蒸着装置の基材ホルダーに固定し、下記構造式に示すET-1をタンタル製抵抗加熱ボードに入れ、これらの基板ホルダーと加熱ボードとを真空蒸着装置の第1真空槽に取り付けた。また、タングステン製の抵抗加熱ボードに銀(Ag)を入れ、第2真空槽内に取り付けた。
試料No.6の透明電極の作製において、中間層の材料と、導電性層の膜厚とを、下記表1に記載の通りに変更した。
それ以外は、試料No.6の透明電極と同様の方法で、試料No.7~14の各透明電極を作製した。
試料No.6の透明電極の作製において、基材をPET(Polyethylene terephthalate)に変更し、中間層の材料を下記表1に記載の通りに変更した。
それ以外は、試料No.6と同様の方法で、試料No.15~17の各透明電極を作製した。
上記のように作製した試料No.1~17の各透明電極について、光透過率を測定した。光透過率の測定は、分光光度計(日立製作所製U-3300)を用い、試料と同じ基材をベースラインとして行った。その結果を下記表1に示す。
上記のように作製した試料No.1~17の各透明電極について、シート抵抗値を測定した。シート抵抗値の測定は、抵抗率計(三菱化学社製MCP-T610)を用い、4端子4探針法定電流印加方式で行った。その結果を下記表1に示す。
表1から明らかなように、試料No.7~17の、一般式(1)で表されるビピリジン誘導体を用いた中間層上に銀(Ag)を主成分とした導電性層を設けた本発明構成の透明電極は何れも、光透過率が59%以上であり、シート抵抗値が41Ω/□以下に抑えられている。これに対して、試料No.1~6の、本発明構成ではない透明電極は、光透過率が何れも59%未満であり、しかもシート抵抗値が41Ω/□を超えるものがあった。
作製した試料No.1~17の発光パネルについて、光透過率を測定した。光透過率の測定は、分光光度計(日立製作所製U-3300)を用い、試料と同じ基材をベースラインとして行った。その結果を下記表2に示す。
作製した試料No.1~17の発光パネルについて、駆動電圧を測定した。駆動電圧の測定においては、各発光パネルの透明電極1側(すなわち透明基板13側)と、対向電極5a側(すなわち封止材17側)との両側での正面輝度を測定し、その和が1000cd/m2となるときの電圧を駆動電圧として測定した。尚、輝度の測定には分光放射輝度計CS-1000(コニカミノルタセンシング製)を用いた。得られた駆動電圧の数値が小さいほど、好ましい結果であることを表す。
その結果を下記表2に示す。
表2から明らかなように、試料No.7~17の、本発明構成の透明電極1を有機EL素子のアノードに用いた発光パネルは何れも、光透過率が55%以上であり、且つ駆動電圧が4.2V以下に抑えられている。これに対して、試料No.1~6の、本発明構成ではない透明電極を有機EL素子のアノードに用いた発光パネルは、光透過率が何れも55%未満であり、しかも、電圧を印加しても発光しないか、又は発光しても駆動電圧が4.2Vを超えるものがあった。
1a 中間層
1b 導電性層
3 発光機能層
3a 正孔注入層
3b 正孔輸送層
3c 発光層
3d 電子輸送層
3e 電子注入層
5a、5b、5c 対向電極
11 基材
13 透明基板(基材)
13a 光取り出し面
15 補助電極
17 封止剤
19 接着剤
21 発光パネル
23 支持基板
31 正孔輸送・注入層
32 発光層
33 正孔阻止層
34 電子輸送層
35 電子注入層
100、200、300、400 有機EL素子
131 基板
131a 光取り出し面
A 発光領域
B 非発光領域
h 発光光
Claims (7)
- 前記導電性層の膜厚が5nm以上、8nm以下であることを特徴とする請求項1~3の何れか1項に記載の透明電極。
- 150℃以上の加熱プロセスを含まずに作製されていることを特徴とする請求項1~4の何れか1項に記載の透明電極。
- 請求項1~5の何れか1項に記載の透明電極を備えることを特徴とする電子デバイス。
- 請求項1~5の何れか1項に記載の透明電極を備えることを特徴とする有機エレクトロルミネッセンス素子。
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---|---|---|---|---|
WO2014065215A1 (ja) * | 2012-10-24 | 2014-05-01 | コニカミノルタ株式会社 | 透明電極、電子デバイス及び有機エレクトロルミネッセンス素子 |
WO2015118932A1 (ja) * | 2014-02-10 | 2015-08-13 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス照明装置及び照明方法 |
JP2016100072A (ja) * | 2014-11-18 | 2016-05-30 | コニカミノルタ株式会社 | 透明電極、電子デバイス及び有機エレクトロルミネッセンス素子 |
WO2019123190A1 (ja) * | 2017-12-22 | 2019-06-27 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器、及び照明装置 |
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ES2772133T3 (es) * | 2014-11-20 | 2020-07-07 | Merck Patent Gmbh | Compuestos heteroarilo como inhibidores de IRAK y sus usos |
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JP6079936B1 (ja) * | 2015-06-15 | 2017-02-15 | 住友化学株式会社 | 有機el素子の製造方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002352961A (ja) * | 2001-05-25 | 2002-12-06 | Toray Ind Inc | 有機電界発光装置 |
JP2008277810A (ja) * | 2008-04-14 | 2008-11-13 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子及び表示装置 |
WO2009151039A1 (ja) * | 2008-06-11 | 2009-12-17 | 保土谷化学工業株式会社 | 有機エレクトロルミネッセンス素子 |
JP2011077028A (ja) * | 2009-09-04 | 2011-04-14 | Hitachi Displays Ltd | 有機el表示装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009107651A1 (ja) * | 2008-02-26 | 2009-09-03 | 保土谷化学工業株式会社 | 置換されたビピリジル化合物および有機エレクトロルミネッセンス素子 |
-
2013
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002352961A (ja) * | 2001-05-25 | 2002-12-06 | Toray Ind Inc | 有機電界発光装置 |
JP2008277810A (ja) * | 2008-04-14 | 2008-11-13 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子及び表示装置 |
WO2009151039A1 (ja) * | 2008-06-11 | 2009-12-17 | 保土谷化学工業株式会社 | 有機エレクトロルミネッセンス素子 |
JP2011077028A (ja) * | 2009-09-04 | 2011-04-14 | Hitachi Displays Ltd | 有機el表示装置 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014065215A1 (ja) * | 2012-10-24 | 2014-05-01 | コニカミノルタ株式会社 | 透明電極、電子デバイス及び有機エレクトロルミネッセンス素子 |
JPWO2014065215A1 (ja) * | 2012-10-24 | 2016-09-08 | コニカミノルタ株式会社 | 透明電極、電子デバイス及び有機エレクトロルミネッセンス素子 |
WO2015118932A1 (ja) * | 2014-02-10 | 2015-08-13 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス照明装置及び照明方法 |
JP2016100072A (ja) * | 2014-11-18 | 2016-05-30 | コニカミノルタ株式会社 | 透明電極、電子デバイス及び有機エレクトロルミネッセンス素子 |
WO2019123190A1 (ja) * | 2017-12-22 | 2019-06-27 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器、及び照明装置 |
JPWO2019123190A1 (ja) * | 2017-12-22 | 2020-12-24 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器、及び照明装置 |
US11404656B2 (en) | 2017-12-22 | 2022-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, light-emitting apparatus, electronic device, and lighting device |
JP7304818B2 (ja) | 2017-12-22 | 2023-07-07 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器、及び照明装置 |
WO2020184379A1 (ja) * | 2019-03-08 | 2020-09-17 | 保土谷化学工業株式会社 | 分子末端に含窒素複素環を有する3置換ベンゼン化合物および有機エレクトロルミネッセンス素子 |
CN113557233A (zh) * | 2019-03-08 | 2021-10-26 | 保土谷化学工业株式会社 | 分子末端具有含氮杂环的三取代苯化合物及有机电致发光元件 |
JP7487890B2 (ja) | 2019-03-08 | 2024-05-21 | 保土谷化学工業株式会社 | 分子末端に含窒素複素環を有する3置換ベンゼン化合物および有機エレクトロルミネッセンス素子 |
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