WO2013094059A1 - Method for fracturing brittle material substrate - Google Patents

Method for fracturing brittle material substrate Download PDF

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Publication number
WO2013094059A1
WO2013094059A1 PCT/JP2011/079842 JP2011079842W WO2013094059A1 WO 2013094059 A1 WO2013094059 A1 WO 2013094059A1 JP 2011079842 W JP2011079842 W JP 2011079842W WO 2013094059 A1 WO2013094059 A1 WO 2013094059A1
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Prior art keywords
scribe line
laser beam
substrate
brittle material
cleaving
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PCT/JP2011/079842
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French (fr)
Japanese (ja)
Inventor
政二 清水
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三星ダイヤモンド工業株式会社
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Priority to KR1020127019017A priority Critical patent/KR101442067B1/en
Priority to PCT/JP2011/079842 priority patent/WO2013094059A1/en
Priority to CN201180005624.7A priority patent/CN103282317B/en
Publication of WO2013094059A1 publication Critical patent/WO2013094059A1/en

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/146—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor the fluid stream containing a liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • C03B33/033—Apparatus for opening score lines in glass sheets
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/09—Severing cooled glass by thermal shock
    • C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Definitions

  • intersection area for reducing the laser beam irradiation amount has a width of 5 mm or less from the intersection of the first scribe line and the second scribe line to the upstream side and the downstream side in the relative movement direction of the laser beam. preferable.
  • a laser output device 34 is provided on the mounting base 32.
  • the laser beam LB emitted from the laser output device 34 is reflected downward by the reflection mirror 44, and is formed on the rotary table 26 from the opening formed in the support base 31 through the optical system held in the holding member 33.
  • the fixed brittle material substrate 50 is irradiated.
  • the mounting base 32 is provided with a pair of CCD cameras 38 and 39 for recognizing alignment marks engraved in advance on the brittle material substrate 50. These CCD cameras 38 and 39 detect misalignment when the brittle material substrate 50 is set. For example, when the brittle material substrate 50 is deviated by an angle ⁇ , the rotary table 26 is rotated by ⁇ , and the brittle material substrate 50 is detected. When is shifted by Y, the slide table 12 is moved by -Y.
  • the brittle material substrate 50 is cleaved in the cleaving apparatus having such a configuration, first, the brittle material substrate 50 is placed on the rotary table 26 and fixed by suction means. Then, the CCD camera 38, 39 images the alignment mark provided on the brittle material substrate 50, and positions the brittle material substrate 50 at a predetermined position based on the imaging data as described above.
  • the brittle material substrate 50 By irradiating the brittle material substrate 50 with the laser beam LB, the brittle material substrate 50 is heated below the melting temperature in the thickness direction, and the brittle material substrate 50 tries to thermally expand, but cannot expand due to local heating, and the irradiation point Compressive stress is generated around the center. Immediately after the heating, the surface of the brittle material substrate 50 is cooled by water, so that the brittle material substrate 50 is contracted and tensile stress is generated. Due to the action of the tensile stress, the vertical crack 53 is formed in the brittle material substrate 50 along the planned cutting line 51 with the trigger crack as a starting point.
  • the laser beam LB is irradiated again along the first scribe line 52a.
  • the vertical crack 53a extends in the substrate thickness direction, and the substrate 50 is cleaved by the first scribe line 52a.
  • the depth of the vertical crack 53a after the extension may extend to a depth at which the substrate 50 is cleaved without applying an external force. It is not necessary to reach the opposite side of the.
  • the irradiation amount of the laser beam LB at this time is shown in FIG. As understood from FIG. 4B, the laser beam irradiation amount gradually decreases from the normal irradiation amount toward the intersection of the first scribe line 52a and the second scribe line 52b, and becomes zero at the intersection. After that, it gradually increases and returns to the normal dose. In this way, by reducing the irradiation amount of the laser beam LB to the intersection area between the first scribe line 52a and the second scribe line 52b, occurrence of chipping at the intersection portion is suppressed.
  • Laser type CO 2 laser Laser output: 100W Relative moving speed: 100mm / sec Laser spot: elliptical
  • Laser break laser beam irradiation conditions Laser type: CO 2 laser Laser output: 320W Relative moving speed: 1500mm / sec Laser spot: elliptical
  • Example 1 had good cleaving at all of the 40 intersections, whereas the cleaving method of Comparative Example 1 cleaved only 3 intersections. Good and chipped at the remaining 37 intersections.
  • Laser type CO 2 laser Laser output: 130W Relative movement speed: 180mm / sec Laser spot: elliptical

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Mining & Mineral Resources (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)

Abstract

In the present invention, a first scribe line (52a) comprising a perpendicular crack (53a) and a second scribe line (52b) comprising a perpendicular crack (53b) are formed by laser beam (LB) irradiation and the spray of a cooling medium from a cooling nozzle (37). The second scribe line (52b) is again irradiated with the laser beam (LB) to extend the perpendicular crack (53b), and a substrate (50) is fractured at the second scribe line (52b). Next, the intersection point region between a fracture line (54) and the first scribe line (52a) is covered with a glass plate (61) and water droplets (62). Then, the first scribe line (52a), except for the intersection region, is again irradiated with the laser beam (LB) to extend the perpendicular crack (53a), and the substrate (50) is fractured at the first scribe line (52a). This suppresses the occurrence of splintering at the point of intersection in a case where a brittle material substrate is fractured in two intersecting directions using a laser.

Description

脆性材料基板の割断方法Cleaving method of brittle material substrate
　本発明は、脆性材料基板にレーザビームを照射して、互いに交差する２方向に沿って脆性材料基板を割断する方法に関するものである。 The present invention relates to a method of irradiating a brittle material substrate with a laser beam and cleaving the brittle material substrate along two directions intersecting each other.
　従来、ガラス基板などの脆性材料基板の割断方法としては、カッターホイール等を圧接転動させてスクライブラインを形成した後、スクライブラインに沿って基板に対して垂直方向から外力を加え基板を割断する方法が広く行われている。 Conventionally, as a method for cleaving a brittle material substrate such as a glass substrate, a scribe line is formed by pressing and rolling a cutter wheel or the like, and then the substrate is cleaved by applying external force from the direction perpendicular to the substrate along the scribe line. The method is widely practiced.
　通常、カッターホイールを用いて脆性材料基板のスクライブを行った場合、カッターホイールによって脆性材料基板に付与される機械的な応力によって基板の欠陥が生じやすく、ブレイクを行った際に上記欠陥に起因する欠け等が発生する。 Usually, when a brittle material substrate is scribed using a cutter wheel, the substrate is likely to be defective due to mechanical stress imparted to the brittle material substrate by the cutter wheel, and is caused by the above-described defect when performing a break. Chipping or the like occurs.
　そこで、近年、レーザを用いて脆性材料基板を割断する方法が実用化されている。この方法は、レーザビームを基板に照射して基板を溶融温度未満に加熱した後、冷却媒体により基板を冷却することによって基板に熱応力を生じさせ、この熱応力によって基板の表面から略垂直方向にクラックを形成させるというものである。このレーザビームを用いた脆性材料基板の割断方法では、熱応力を利用するため、工具を基板に直接接触させることがなく、割断面は欠け等の少ない平滑な面となり、基板の強度が維持される。 Therefore, in recent years, a method of cleaving a brittle material substrate using a laser has been put into practical use. In this method, the substrate is irradiated with a laser beam to heat the substrate to a temperature lower than the melting temperature, and then the substrate is cooled by a cooling medium, thereby generating thermal stress on the substrate. To form cracks. In this method of cleaving a brittle material substrate using a laser beam, since the thermal stress is used, the tool is not brought into direct contact with the substrate, the fractured surface becomes a smooth surface with few chips and the strength of the substrate is maintained. The
　また、例えば特許文献１では、レーザを用いて、互いに交差する２方向に脆性材料基板を割断する方法も提案されている。この提案方法は、脆性材料基板にレーザビームを照射してハーフカット状態の第１クラックを形成した後、同じくレーザビームの照射によって、第１クラックに交差するハーフカット状態の第２クラックを形成し、次いで第１クラック及び第２クラックにレーザビームを再度照射してフルカットするものである。 For example, Patent Document 1 proposes a method of cleaving a brittle material substrate in two directions intersecting each other using a laser. In this proposed method, a brittle material substrate is irradiated with a laser beam to form a first half-cut crack, and then a second half-cut crack that intersects the first crack is also formed by laser beam irradiation. Then, the first crack and the second crack are again irradiated with a laser beam to perform a full cut.
特開2001-130921号公報JP 2001-130921
　ところが、上記提案方法のように、第１クラック及び第２クラックにレーザビームを再度照射して脆性材料基板をフルカットする際に、第１クラックと第２クラックとの交点部分に欠けが生じることがある。割断後の角部となる脆性材料基板の交点部分に欠けが生じると、割断後の脆性材料基板の寸法精度が落ちるとともに、発生したカレットが基板表面に付着等して不具合の原因となる。 However, when the brittle material substrate is fully cut by irradiating the first crack and the second crack again with the laser beam as in the above proposed method, the intersection of the first crack and the second crack is chipped. There is. If a break occurs at the intersection portion of the brittle material substrate that becomes the corner portion after the cleaving, the dimensional accuracy of the brittle material substrate after the cleaving is lowered, and the generated cullet adheres to the substrate surface and causes a problem.
　本発明はこのような従来の問題に鑑みてなされたものであり、その目的は、レーザを用いて互いに交差する２方向で脆性材料基板を割断する場合に、交点部分における欠けの発生を抑制する方法を提供することにある。 The present invention has been made in view of such a conventional problem, and an object of the present invention is to suppress the occurrence of chipping at an intersection when a brittle material substrate is cleaved in two directions intersecting each other using a laser. It is to provide a method.
　本発明によれば、互いに交差する、垂直クラックからなる第１スクライブラインと第２スクライブラインとを脆性材料基板に形成する工程と、第１スクライブライン及び第２スクライブラインに沿ってレーザビームを相対移動させながら照射して前記垂直クラックを伸展させて、第１スクライブライン及び第２スクライブラインで前記基板を割断する工程とを含む脆性材料基板の割断方法であって、第１スクライブライン及び／又は第２スクライブラインに沿ってレーザビームを照射する際に、第１スクライブラインと第２スクライブラインとの交点領域へのレーザビーム照射量を、交点領域以外のレーザビーム照射量よりも減少させることを特徴とする脆性材料基板の割断方法が提供される。 According to the present invention, a step of forming a first scribe line and a second scribe line made of vertical cracks intersecting each other on a brittle material substrate, and a laser beam is relatively moved along the first scribe line and the second scribe line. A method of cleaving a brittle material substrate, comprising the step of extending the vertical crack by irradiation while moving and cleaving the substrate with a first scribe line and a second scribe line, the first scribe line and / or When irradiating the laser beam along the second scribe line, the amount of laser beam applied to the intersection area between the first scribe line and the second scribe line is reduced more than the amount of laser beam irradiation other than the intersection area. A brittle material substrate cleaving method is provided.
　ここで、第１スクライブラインと第２スクライブラインとの交点領域へのレーザビーム照射量としては、交点領域以外のレーザビーム照射量の５０％以下とするのが好ましい。 Here, it is preferable that the laser beam irradiation amount to the intersection region between the first scribe line and the second scribe line is 50% or less of the laser beam irradiation amount other than the intersection region.
　また、第１スクライブラインと第２スクライブラインとの交点領域へのレーザビーム照射量を他の部分よりも減少させるには、レーザビーム出力を制御することによって行ってもよい。また、第１スクライブラインと第２スクライブラインとの交点領域を、レーザビームを吸収又は反射する被覆部材や液体で覆うことによって、第１スクライブラインと第２スクライブラインとの交点領域へのレーザビーム照射量を減少させてもよい。 Further, in order to reduce the amount of laser beam irradiation to the intersection area between the first scribe line and the second scribe line as compared with other portions, the laser beam output may be controlled. Further, by covering the intersection area between the first scribe line and the second scribe line with a coating member or liquid that absorbs or reflects the laser beam, the laser beam to the intersection area between the first scribe line and the second scribe line is covered. The dose may be reduced.
　また、レーザビームの照射量を減少させる交点領域としては、第１スクライブラインと第２スクライブラインとの交点から、レーザビームの相対移動方向上流側及び下流側にそれぞれ５ｍｍ以下の幅を有するのが好ましい。 Further, the intersection area for reducing the laser beam irradiation amount has a width of 5 mm or less from the intersection of the first scribe line and the second scribe line to the upstream side and the downstream side in the relative movement direction of the laser beam. preferable.
　第１スクライブライン及び第２スクライブラインは、前記基板に対してレーザビームを相対移動させながら照射して、前記基板を溶融温度未満に加熱した後、前記基板に対して冷却媒体を吹き付けて冷却し、前記基板に生じた熱応力によって形成するのが好ましい。 The first scribe line and the second scribe line irradiate the substrate while moving the laser beam relative to the substrate to heat the substrate to below the melting temperature, and then cool the substrate by spraying a cooling medium. The substrate is preferably formed by thermal stress generated in the substrate.
　本発明に係る脆性材料基板の割断方法によれば、互いに交差する２方向に脆性材料基板を割断する際に、交点部分における欠けの発生を抑制できる。これにより、割断後の脆性材料基板の寸法精度が向上し、またカレットに起因する不具合が格段に抑制される。 According to the method for cleaving a brittle material substrate according to the present invention, when the brittle material substrate is cleaved in two directions intersecting with each other, the occurrence of chipping at the intersection can be suppressed. Thereby, the dimensional accuracy of the brittle material substrate after cleaving is improved, and defects caused by cullet are significantly suppressed.
本発明に係る割断方法を実施できる割断装置の一例を示す概説図である。It is an outline figure showing an example of a cleaving device which can carry out a cleaving method concerning the present invention. レーザスクライブの操作状態を説明する図である。It is a figure explaining the operation state of a laser scribe. 本発明に係る割断方法の一例を示す工程図である。It is process drawing which shows an example of the cleaving method which concerns on this invention. レーザビームＬＢの交点領域への照射量調整例及び交点領域でのレーザ照射量を示す図である。It is a figure which shows the irradiation amount adjustment example to the intersection area | region of the laser beam LB, and the laser irradiation amount in an intersection area | region. レーザビームＬＢの交点領域への照射量調整例及び交点領域でのレーザ照射量を示す図である。It is a figure which shows the irradiation amount adjustment example to the intersection area | region of the laser beam LB, and the laser irradiation amount in an intersection area | region. レーザビームＬＢの交点領域への照射量調整を被覆部材で行う場合の例を示す図である。It is a figure which shows the example in the case of performing irradiation amount adjustment to the intersection area | region of the laser beam LB with a coating | coated member. レーザビームＬＢの交点領域への照射量調整を液体で行う場合の例を示す図である。It is a figure which shows the example in the case of performing irradiation amount adjustment to the intersection area | region of the laser beam LB with a liquid.
　以下、本発明に係る脆性材料基板の割断方法についてより詳細に説明するが、本発明はこれらの実施形態に何ら限定されるものではない。 Hereinafter, the method for cleaving the brittle material substrate according to the present invention will be described in more detail, but the present invention is not limited to these embodiments.
　図１に、本発明に係る割断方法の実施に用いる割断装置の一例を示す概説図を示す。この図の割断装置は、架台１１上に紙面に対して垂直方向（Ｙ方向）に移動自在のスライドテーブル１２と、スライドテーブル上に図の左右方向（Ｘ方向）に移動自在の台座１９と、台座１９上に設けられた回転機構２５とを備え、この回転機構２５上に設けられた回転テーブル２６に載置・固定された脆性材料基板５０はこれらの移動手段によって水平面内を自在に移動される。 FIG. 1 is a schematic diagram showing an example of a cleaving apparatus used for carrying out the cleaving method according to the present invention. The cleaving apparatus in this figure includes a slide table 12 that is movable on the gantry 11 in a direction perpendicular to the paper surface (Y direction), a pedestal 19 that is movable on the slide table in the left and right direction (X direction), The brittle material substrate 50 provided with a rotating mechanism 25 provided on the pedestal 19 and placed and fixed on the rotating table 26 provided on the rotating mechanism 25 is freely moved in the horizontal plane by these moving means. The
　スライドテーブル１２は、架台１１の上面に所定距離隔てて平行に配置された一対のガイドレール１４，１５上に移動自在に取り付けられている。そして、一対のガイドレール１４，１５の間には、ガイドレール１４，１５と平行にボールネジ１３が、不図示のモータによって正・逆回転自在に設けられている。また、スライドテーブル１２の底面にはボールナット１６が設けられている。このボールナット１６はボールネジ１３に螺合している。ボールネジ１３が正転又は逆転することによって、ボールナット１６はＹ方向に移動し、これによってボールナット１６が取り付けられたスライドテーブル１２が、ガイドレール１４，１５上をＹ方向に移動する。 The slide table 12 is movably mounted on a pair of guide rails 14 and 15 arranged in parallel with a predetermined distance on the upper surface of the gantry 11. Between the pair of guide rails 14 and 15, a ball screw 13 is provided in parallel to the guide rails 14 and 15 so as to be rotatable forward and backward by a motor (not shown). A ball nut 16 is provided on the bottom surface of the slide table 12. The ball nut 16 is screwed into the ball screw 13. When the ball screw 13 rotates forward or backward, the ball nut 16 moves in the Y direction, whereby the slide table 12 to which the ball nut 16 is attached moves on the guide rails 14 and 15 in the Y direction.
　また台座１９は、スライドテーブル１２上に所定距離隔てて平行に配置された一対のガイド部材２１に移動可能に支持されている。そして、一対のガイド部材２１間には、ガイド部材２１と平行にボールネジ２２が、モータ２３によって正逆回転自在に設けられている。また、台座１９の底面にはボールナット２４が設けられ、ボールネジ２２に螺合している。ボールネジ２２が正転又は逆転することによって、ボールナット２４はＸ方向に移動し、これによって、ボールナット２４と共に台座１９が、一対のガイド部材２１に沿ってＸ方向に移動する。 The pedestal 19 is movably supported by a pair of guide members 21 arranged in parallel at a predetermined distance on the slide table 12. Between the pair of guide members 21, a ball screw 22 is provided in parallel with the guide member 21 so as to be rotatable forward and backward by a motor 23. A ball nut 24 is provided on the bottom surface of the pedestal 19 and is screwed into the ball screw 22. When the ball screw 22 rotates forward or backward, the ball nut 24 moves in the X direction, whereby the pedestal 19 together with the ball nut 24 moves in the X direction along the pair of guide members 21.
　台座１９上には回転機構２５が設けられている。そして、この回転機構２５上に回転テーブル２６が設けられている。割断対象である脆性材料基板５０は、回転テーブル２６上に真空吸着によって固定される。回転機構２５は、回転テーブル２６を垂直方向の中心軸の周りに回転させる。 A rotation mechanism 25 is provided on the pedestal 19. A rotating table 26 is provided on the rotating mechanism 25. The brittle material substrate 50 to be cleaved is fixed on the rotary table 26 by vacuum suction. The rotation mechanism 25 rotates the rotary table 26 around the central axis in the vertical direction.
　回転テーブル２６の上方には、回転テーブル２６と離隔対向するように、支持台３１が、取付台３２から垂下する保持部材３３によって支持されている。支持台３１には、脆性材料基板５０の表面にトリガークラックを形成するためのカッタホイール３５と、脆性材料基板５０にレーザビームを照射するための開口（不図示）と、脆性材料基板５０の表面を冷却するための冷却ノズル３７とが設けられている。 A support base 31 is supported above the rotary table 26 by a holding member 33 depending from the mounting base 32 so as to face the rotary table 26 at a distance. The support base 31 includes a cutter wheel 35 for forming a trigger crack on the surface of the brittle material substrate 50, an opening (not shown) for irradiating the brittle material substrate 50 with a laser beam, and the surface of the brittle material substrate 50. And a cooling nozzle 37 for cooling.
　カッタホイール３５は、チップホルダー３６によって、脆性材料基板５０に圧接する位置と非接触な位置とに昇降可能に保持されており、スクライブラインの開始起点となるトリガークラックを形成するときのみ、脆性材料基板５０に圧接する位置に下降する。トリガークラックの形成位置は、トリガークラックから予測不可能な方向にクラックが生じる先走り現象を抑制するために、脆性材料基板５０の表面側端よりも内側に形成するのが好ましい。 The cutter wheel 35 is held by the chip holder 36 so as to be movable up and down between a position in pressure contact with the brittle material substrate 50 and a non-contact position, and the brittle material is formed only when a trigger crack is formed as a starting point of the scribe line. It descends to a position where it comes into pressure contact with the substrate 50. The trigger crack is preferably formed on the inner side of the front edge of the brittle material substrate 50 in order to suppress a preceding phenomenon in which the crack is generated in an unpredictable direction from the trigger crack.
　取付台３２上にはレーザ出力装置３４が設けられている。レーザ出力装置３４から出射されたレーザビームＬＢは、反射ミラー４４で下方に反射され、保持部材３３内に保持された光学系を介して支持台３１に形成された開口から、回転テーブル２６上に固定された脆性材料基板５０に照射される。 A laser output device 34 is provided on the mounting base 32. The laser beam LB emitted from the laser output device 34 is reflected downward by the reflection mirror 44, and is formed on the rotary table 26 from the opening formed in the support base 31 through the optical system held in the holding member 33. The fixed brittle material substrate 50 is irradiated.
　また、支持台３１の、レーザビームＬＢが出射する開口近傍に設けられた冷却ノズル３７からは、脆性材料基板５０に向かって冷却媒体としての水が空気と共に噴出される。冷却媒体が噴出される脆性材料基板５０上の位置は、割断予定ライン５１上で且つレーザビームＬＢの照射領域の後側である（図２を参照）。 Further, water as a cooling medium is jetted together with air from the cooling nozzle 37 provided in the vicinity of the opening of the support base 31 from which the laser beam LB is emitted toward the brittle material substrate 50. The position on the brittle material substrate 50 from which the cooling medium is ejected is on the planned cutting line 51 and behind the irradiation region of the laser beam LB (see FIG. 2).
　取付台３２には、脆性材料基板５０に予め刻印されたアライメントマークを認識する一対のＣＣＤカメラ３８，３９が設けられている。これらのＣＣＤカメラ３８，３９により、脆性材料基板５０のセット時の位置ずれが検出され、例えば脆性材料基板５０が角度θずれていた場合は回転テーブル２６が－θだけ回転され、脆性材料基板５０がＹずれていたときはスライドテーブル１２が－Ｙだけ移動される。 The mounting base 32 is provided with a pair of CCD cameras 38 and 39 for recognizing alignment marks engraved in advance on the brittle material substrate 50. These CCD cameras 38 and 39 detect misalignment when the brittle material substrate 50 is set. For example, when the brittle material substrate 50 is deviated by an angle θ, the rotary table 26 is rotated by −θ, and the brittle material substrate 50 is detected. When is shifted by Y, the slide table 12 is moved by -Y.
　このような構成の割断装置において脆性材料基板５０を割断する場合には、まず、脆性材料基板５０を回転テーブル２６上に載置し吸引手段により固定する。そして、ＣＣＤカメラ３８，３９によって、脆性材料基板５０に設けられたアライメントマークを撮像し、前述のように、撮像データに基づいて脆性材料基板５０を所定の位置に位置決めする。 When the brittle material substrate 50 is cleaved in the cleaving apparatus having such a configuration, first, the brittle material substrate 50 is placed on the rotary table 26 and fixed by suction means. Then, the CCD camera 38, 39 images the alignment mark provided on the brittle material substrate 50, and positions the brittle material substrate 50 at a predetermined position based on the imaging data as described above.
　次いで、前述のように、ホイールカッタ３５によって脆性材料基板５０にトリガークラックを形成する。そして、レーザ出力装置３４からレーザビームＬＢを出射する。レーザビームＬＢは反射ミラー４４よって、図２に示すように、脆性材料基板５０表面に対して略垂直に照射する。また同時に、レーザビーム照射領域の後端近傍に冷却媒体としての水を冷却ノズル３７から噴出させる。脆性材料基板５０にレーザビームＬＢを照射することによって、脆性材料基板５０は厚み方向に溶融温度未満で加熱され、脆性材料基板５０は熱膨張しようとするが、局所加熱のため膨張できず照射点を中心に圧縮応力が発生する。そして加熱直後に、脆性材料基板５０の表面が水により冷却されることによって、脆性材料基板５０が今度は収縮して引張応力が発生する。この引張応力の作用によって、トリガークラックを開始点として割断予定ライン５１に沿って垂直クラック５３が脆性材料基板５０に形成される。 Next, as described above, a trigger crack is formed in the brittle material substrate 50 by the wheel cutter 35. Then, a laser beam LB is emitted from the laser output device 34. The laser beam LB is irradiated by the reflecting mirror 44 substantially perpendicularly to the surface of the brittle material substrate 50 as shown in FIG. At the same time, water as a cooling medium is ejected from the cooling nozzle 37 in the vicinity of the rear end of the laser beam irradiation region. By irradiating the brittle material substrate 50 with the laser beam LB, the brittle material substrate 50 is heated below the melting temperature in the thickness direction, and the brittle material substrate 50 tries to thermally expand, but cannot expand due to local heating, and the irradiation point Compressive stress is generated around the center. Immediately after the heating, the surface of the brittle material substrate 50 is cooled by water, so that the brittle material substrate 50 is contracted and tensile stress is generated. Due to the action of the tensile stress, the vertical crack 53 is formed in the brittle material substrate 50 along the planned cutting line 51 with the trigger crack as a starting point.
　そしてレーザビームＬＢ及び冷却ノズル３７を割断予定ライン５１に沿って相対的に移動させることによって、垂直クラック５３が伸展し脆性材料基板５０にスクライブライン５２が形成される。この実施形態の場合には、レーザビームＬＢと冷却ノズル３７とは所定位置に固定された状態で、スライドテーブル１２と台座１９、回転テーブル２６の回転機構２５とによって脆性材料基板５０が移動される。もちろん、脆性材料基板５０を固定した状態で、レーザビームＬＢと冷却ノズル３７とを移動させても構わない。あるいは脆性材料基板５０及びレーザビームＬＢ・冷却ノズル３７の双方を移動させても構わない。 Then, the vertical crack 53 extends and the scribe line 52 is formed on the brittle material substrate 50 by relatively moving the laser beam LB and the cooling nozzle 37 along the planned cutting line 51. In the case of this embodiment, the brittle material substrate 50 is moved by the slide table 12, the pedestal 19, and the rotating mechanism 25 of the rotating table 26 while the laser beam LB and the cooling nozzle 37 are fixed at predetermined positions. . Of course, the laser beam LB and the cooling nozzle 37 may be moved while the brittle material substrate 50 is fixed. Alternatively, both the brittle material substrate 50 and the laser beam LB / cooling nozzle 37 may be moved.
　次に、本発明に係る割断方法について説明する。図３に、本発明の割断方法の一例を示す工程図を示す。同図（ａ）に示すように、前述のようにして、レーザビームＬＢ及び冷却ノズル３７を割断予定ライン５１ａに従って相対的に移動させることによって、不図示のトリガークラックを開始点とする垂直クラック５３ａを相対移動方向に伸展させて、脆性材料基板５０に第１スクライブライン５２ａを形成する。 Next, the cleaving method according to the present invention will be described. FIG. 3 is a process diagram showing an example of the cleaving method of the present invention. As shown in FIG. 6A, as described above, the laser beam LB and the cooling nozzle 37 are moved relative to each other according to the planned cutting line 51a, whereby a vertical crack 53a starting from a trigger crack (not shown). Are extended in the relative movement direction to form a first scribe line 52 a on the brittle material substrate 50.
　ここで使用するレーザビームＬＢとしては特に限定はなく、基板の材質や厚み、形成したい垂直クラックの深さなどから適宜決定すればよい。脆性材料基板がガラス基板の場合、ガラス基板表面での吸収が大きい波長９～１１μｍのレーザビームが好適に使用される。このようなレーザビームとしてはＣＯ２レーザが挙げられる。レーザビームの基板への照射形状としては、レーザビームの相対移動方向に細長い楕円形状が好ましく、相対移動方向の照射長さＬは１０～６０ｍｍの範囲、照射幅Ｗは１～５ｍｍの範囲が好適である。 The laser beam LB used here is not particularly limited, and may be appropriately determined from the material and thickness of the substrate, the depth of the vertical crack to be formed, and the like. When the brittle material substrate is a glass substrate, a laser beam having a wavelength of 9 to 11 μm having a large absorption on the glass substrate surface is preferably used. An example of such a laser beam is a CO 2 laser. The irradiation shape of the laser beam onto the substrate is preferably an elliptical shape that is elongated in the relative movement direction of the laser beam, the irradiation length L in the relative movement direction is preferably in the range of 10 to 60 mm, and the irradiation width W is preferably in the range of 1 to 5 mm. It is.
　冷却ノズル３７から噴出させる冷却媒体としては水やアルコールなどが挙げられる。また、割断後の脆性材料基板を使用する上で悪影響を与えない範囲において、界面活性剤等の添加剤が添加されていても構わない。冷却媒体の吹き付け量としては通常は数ｍｌ／ｍｉｎ程度が好適である。冷却媒体による基板の冷却は、レーザービームによって加熱された基板を急冷する観点からは、気体（通常は空気）と共に水を噴射させるいわゆるウォータジェット方式が望ましい。冷却媒体による冷却領域は、長径１～５ｍｍ程度の円形状又は楕円形状であることが好ましい。また、冷却領域は、レーザビームによる加熱領域の相対移動方向後方であって、冷却領域と加熱領域との中心点間の距離が数ｍｍ～数十ｍｍ程度となるように形成するのが好ましい。 The cooling medium ejected from the cooling nozzle 37 includes water and alcohol. Further, an additive such as a surfactant may be added within a range that does not adversely affect the use of the brittle material substrate after cleaving. Usually, the amount of cooling medium sprayed is preferably about several ml / min. The cooling of the substrate by the cooling medium is preferably a so-called water jet method in which water is injected together with a gas (usually air) from the viewpoint of rapidly cooling the substrate heated by the laser beam. The cooling region with the cooling medium is preferably circular or elliptical with a major axis of about 1 to 5 mm. Further, the cooling region is preferably formed so that the distance between the center points of the cooling region and the heating region is about several millimeters to several tens of millimeters behind the relative movement direction of the heating region by the laser beam.
　レーザビームＬＢ及び冷却ノズル３７の相対移動速度としては特に限定はなく、得たい垂直クラックの深さなどから適宜決定すればよい。一般に相対移動速度を遅くするほど、形成される垂直クラックは深くなる。通常、相対移動速度は数百ｍｍ／ｓｅｃ程度である。 The relative moving speeds of the laser beam LB and the cooling nozzle 37 are not particularly limited, and may be appropriately determined from the depth of the vertical crack to be obtained. In general, the slower the relative movement speed, the deeper the vertical cracks that are formed. Usually, the relative movement speed is about several hundred mm / sec.
　スクライブライン５２ａを構成する垂直クラック５３ａの深さとしては、特に限定はないが、後工程の脆性材料基板を割断するためのレーザビームを照射する条件、例えば相対移動速度やレーザ出力などの裕度を広げるためには、基板厚み対して２５％以上の深さとするのが望ましい。 The depth of the vertical crack 53a that constitutes the scribe line 52a is not particularly limited, but the laser beam irradiation condition for cleaving the brittle material substrate in the subsequent process, for example, tolerance of relative movement speed, laser output, etc. In order to increase the thickness, it is desirable that the depth is 25% or more with respect to the substrate thickness.
　次いで図３（ｂ）に示すように、第１スクライブライン５２ａに直交する割断予定ライン５１ｂに沿って、レーザビームＬＢ及び冷却ノズル３７を相対的に移動させることによって第２スクライブライン５２ｂを形成する。第２スクライブライン５２ｂの形成条件としては、第１スクライブライン５２ａの形成条件と同じ条件がここでも挙げられる。 Next, as shown in FIG. 3B, the second scribe line 52b is formed by relatively moving the laser beam LB and the cooling nozzle 37 along the planned cutting line 51b orthogonal to the first scribe line 52a. . The conditions for forming the second scribe line 52b are the same as the conditions for forming the first scribe line 52a.
　次に、同図（ｃ）に示すように、第２スクライブライン５２ｂに沿ってレーザビームＬＢを再度照射する。これによって垂直クラック５３ｂが基板厚み方向に伸展し、第２スクライブライン５２ｂで基板５０が割断されて割断ライン５４が形成される。なお、垂直クラック５３ｂは、外力を加えることなく基板５０が割断される深さにまで伸展していればよく、必ずしも基板５０の反対面側に到達している必要はない。 Next, as shown in FIG. 5C, the laser beam LB is irradiated again along the second scribe line 52b. As a result, the vertical crack 53b extends in the substrate thickness direction, and the substrate 50 is cleaved by the second scribe line 52b to form the cleave line 54. The vertical crack 53b only needs to extend to a depth at which the substrate 50 is cleaved without applying external force, and does not necessarily have to reach the opposite surface side of the substrate 50.
　垂直クラック５３ｂを基板厚み方向に伸展させるためのレーザビームＬＢの照射条件は、基板５０の厚みや垂直クラック５３ｂの深さなどから適宜決定すればよいが、通常は前述の第２スクライブライン５２ｂを形成するときの照射条件がここでも例示される。 Irradiation conditions of the laser beam LB for extending the vertical crack 53b in the substrate thickness direction may be determined as appropriate from the thickness of the substrate 50, the depth of the vertical crack 53b, and the like. Usually, the second scribe line 52b described above is used. The irradiation conditions when forming are also exemplified here.
　次いで、同図（ｄ）に示すように、第１スクライブライン５２ａに沿ってレーザビームＬＢを再度照射する。これによって垂直クラック５３ａが基板厚み方向に伸展し、第１スクライブライン５２ａで基板５０が割断される。伸展後の垂直クラック５３ａの、基板厚み方向の深さは、垂直クラック５３ｂの場合と同様に、外力を加えることなく基板５０が割断される深さにまで伸展していればよく、必ずしも基板５０の反対面側に到達している必要はない。 Next, as shown in FIG. 4D, the laser beam LB is irradiated again along the first scribe line 52a. As a result, the vertical crack 53a extends in the substrate thickness direction, and the substrate 50 is cleaved by the first scribe line 52a. Similarly to the vertical crack 53b, the depth of the vertical crack 53a after the extension may extend to a depth at which the substrate 50 is cleaved without applying an external force. It is not necessary to reach the opposite side of the.
　ここで重要なことは、第１スクライブライン５２ａに沿ってレーザビームＬＢを再度照射する際に、第１スクライブライン５２ａと割断ライン５４との交点領域へのレーザビームＬＢの照射量を他の部分の照射量よりも減少させることにある。このように交点領域へのレーザビームＬＢの照射量を減少させることによって、割断後の角部となる交点部分の欠けを効果的に抑えられるようになる。交点領域におけるより好ましいレーザビーム照射量は、交点領域以外のレーザビーム照射量の５０％以下であり、より好ましくは１０％以下、さらに好ましくはゼロ％である。 What is important here is that when the laser beam LB is irradiated again along the first scribe line 52a, the irradiation amount of the laser beam LB to the intersection area between the first scribe line 52a and the breaking line 54 is changed to another portion. This is to reduce the amount of irradiation. By reducing the irradiation amount of the laser beam LB to the intersection area in this way, it is possible to effectively suppress the lack of the intersection portion that becomes the corner after the cleaving. A more preferable laser beam irradiation amount in the intersection region is 50% or less of the laser beam irradiation amount other than the intersection region, more preferably 10% or less, and still more preferably zero%.
　なお、以上説明した実施形態では、第１スクライブライン５２ａに沿ってレーザビームＬＢを再度照射する際に、交点領域へのレーザビームＬＢの照射量を他の部分の照射量よりも減少させたが、第２スクライブライン５２ｂに沿ってレーザビームＬＢを再度照射する際に、交点領域へのレーザビームＬＢの照射量を他の部分の照射量よりも減少させるようにしてもよい。あるいはまた、第１スクライブライン５２ａに沿ってレーザビームＬＢを再度照射する際及び第２スクライブライン５２ｂに沿ってレーザビームＬＢを再度照射する際に、交点領域へのレーザビームＬＢの照射量を他の部分の照射量よりも減少させるようにしてもよい。 In the embodiment described above, when the laser beam LB is irradiated again along the first scribe line 52a, the irradiation amount of the laser beam LB to the intersection region is reduced from the irradiation amount of other portions. When irradiating the laser beam LB again along the second scribe line 52b, the irradiation amount of the laser beam LB to the intersection area may be decreased from the irradiation amount of other portions. Alternatively, when the laser beam LB is irradiated again along the first scribe line 52a and when the laser beam LB is irradiated again along the second scribe line 52b, the irradiation amount of the laser beam LB to the intersection area is changed. You may make it reduce rather than the irradiation amount of this part.
　第１スクライブライン５２ａと第２スクライブライン５２ｂとの交点領域へのレーザビームＬＢの照射量の調整は、例えば、レーザビーム出力の制御によって行うことができる。レーザビームの照射スポットを、シリンドリカルレンズ等の光学系によってレーザビームの相対的移動方向に細長い楕円形状とした場合には、図４（ａ）に示すように、第１スクライブライン５２ａと第２スクライブライン５２ｂとの交点を中心として、レーザビームＬＢの相対移動方向上流側から下流側の所定範囲にわたってレーザビームＬＢを照射しない領域を設ける。このときのレーザビームＬＢの照射量を図４（ｂ）に示す。図４（ｂ）から理解されるように、レーザビームの照射量は、第１スクライブライン５２ａと第２スクライブライン５２ｂとの交点で向かって通常照射量から徐々に減少し、交点でゼロとなった後、徐々に増加して通常照射量に戻るようになる。このように、第１スクライブライン５２ａと第２スクライブライン５２ｂとの交点領域へのレーザビームＬＢの照射量を減少させることにより、交点部分における欠けの発生が抑制される。 The adjustment of the irradiation amount of the laser beam LB to the intersection area between the first scribe line 52a and the second scribe line 52b can be performed by controlling the laser beam output, for example. When the laser beam irradiation spot is formed into an elliptical shape elongated in the relative movement direction of the laser beam by an optical system such as a cylindrical lens, as shown in FIG. 4A, the first scribe line 52a and the second scribe line are formed. A region where the laser beam LB is not irradiated is provided over a predetermined range from the upstream side to the downstream side in the relative movement direction of the laser beam LB with the intersection with the line 52b as the center. The irradiation amount of the laser beam LB at this time is shown in FIG. As understood from FIG. 4B, the laser beam irradiation amount gradually decreases from the normal irradiation amount toward the intersection of the first scribe line 52a and the second scribe line 52b, and becomes zero at the intersection. After that, it gradually increases and returns to the normal dose. In this way, by reducing the irradiation amount of the laser beam LB to the intersection area between the first scribe line 52a and the second scribe line 52b, occurrence of chipping at the intersection portion is suppressed.
　レーザビームＬＢの照射量を減少させる領域、すなわち第１スクライブライン５２ａと第２スクライブライン５２ｂとの交点領域としては、第１スクライブライン５２ａと第２スクライブライン５２ｂとの交点から、レーザービームＬＢの相対移動方向上流側には最大で５ｍｍ、下流側にも最大５ｍｍの幅であるのが好ましい。 An area where the irradiation amount of the laser beam LB is reduced, that is, an intersection area between the first scribe line 52a and the second scribe line 52b is determined from the intersection of the first scribe line 52a and the second scribe line 52b. It is preferable that the width is 5 mm at the maximum on the upstream side in the relative movement direction and 5 mm at the downstream side.
　また、レーザビームＬＢの照射スポットを、ポリゴンミラーやガルバノミラー、円筒型反射鏡などを用いて走査してレーザビームの相対的移動方向に細長い楕円形状とした場合には、照射スポット内のレーザ強度が均一となるとともに、所定範囲にわたってレーザ照射量をゼロにもできる。図５（ａ）に、レーザビームＬＢの照射状態を経時的に示す図を示す。レーザビームＬＢが、第１スクライブライン５２ａと第２スクライブライン５２ｂとの交点領域にかかると、交点領域内を走査する間はレーザ発振をオフにする一方、交点領域外に出るとレーザ発振をオンにする。これにより、図５（ｂ）に示すように、交点領域へのレーザビームＬＢの照射量をゼロにできる。 In addition, when the irradiation spot of the laser beam LB is scanned using a polygon mirror, a galvano mirror, a cylindrical reflection mirror or the like to make an elliptical shape elongated in the relative movement direction of the laser beam, the laser intensity in the irradiation spot Becomes uniform, and the laser irradiation amount can be made zero over a predetermined range. FIG. 5A shows a diagram showing the irradiation state of the laser beam LB over time. When the laser beam LB hits the intersection area of the first scribe line 52a and the second scribe line 52b, the laser oscillation is turned off while scanning the intersection area, and when it goes out of the intersection area, the laser oscillation is turned on. To. Thereby, as shown in FIG.5 (b), the irradiation amount of the laser beam LB to an intersection area | region can be made zero.
　図６に、第１スクライブライン５２ａと第２スクライブライン５２ｂとの交点領域へのレーザビームＬＢの照射量を調整する他の手段を示す。この図に示す手段では、第１スクライブライン５２ａと第２スクライブライン５２ｂとの交点領域を被覆部材６１で覆い、交点領域へのレーザビームＬＢの照射量を減少させる。この手段によれば、前記実施形態のようなレーザ発振をオン・オフ制御する必要がなく、被覆部材６１の載置という簡単な作業でレーザビームＬＢの照射量を減少できる。 FIG. 6 shows another means for adjusting the irradiation amount of the laser beam LB to the intersection area between the first scribe line 52a and the second scribe line 52b. In the means shown in this figure, the intersection area of the first scribe line 52a and the second scribe line 52b is covered with the covering member 61, and the irradiation amount of the laser beam LB to the intersection area is reduced. According to this means, it is not necessary to turn on / off the laser oscillation as in the above-described embodiment, and the irradiation amount of the laser beam LB can be reduced by a simple operation of placing the covering member 61.
　本発明で使用する被覆部材６１としては、レーザビームＬＢを吸収又は反射する部材であれば特に限定はなく、例えば、ガラス基板やアルミニウムなどの金属板、ドライアイスなどが挙げられる。ガラス基板を用いる場合には、ガラス基板でレーザビームが吸収されるので、その材質や厚み等によって基板５０へのレーザビームＬＢの照射量を調整できる。また、アルミニウムなどの金属板を用いる場合には、レーザビームＬＢは金属板で反射されるので基板５０への照射量はゼロとなる。 The covering member 61 used in the present invention is not particularly limited as long as it is a member that absorbs or reflects the laser beam LB, and examples thereof include a glass plate, a metal plate such as aluminum, and dry ice. When a glass substrate is used, the laser beam is absorbed by the glass substrate, so that the irradiation amount of the laser beam LB to the substrate 50 can be adjusted by the material, thickness, and the like. When a metal plate such as aluminum is used, the laser beam LB is reflected by the metal plate, so that the irradiation amount to the substrate 50 becomes zero.
　図７に、第１スクライブライン５２ａと第２スクライブライン５２ｂとの交点領域へのレーザビームＬＢの照射量を調整するさらに他の手段を示す。この図に示す手段では、第１スクライブライン５２ａと第２スクライブライン５２ｂとの交点領域を液体６２で覆い、交点領域へのレーザビームＬＢの照射量を減少させる。この手段によれば、上記実施形態と同様に、レーザ発振をオン・オフ制御する必要がなく、液体６２の滴下・塗布等の簡単な作業でレーザビームＬＢの照射量を減少できる。 FIG. 7 shows still another means for adjusting the irradiation amount of the laser beam LB to the intersection area between the first scribe line 52a and the second scribe line 52b. In the means shown in this figure, the intersection area between the first scribe line 52a and the second scribe line 52b is covered with the liquid 62, and the irradiation amount of the laser beam LB to the intersection area is reduced. According to this means, similarly to the above-described embodiment, it is not necessary to perform on / off control of laser oscillation, and the irradiation amount of the laser beam LB can be reduced by a simple operation such as dropping or coating of the liquid 62.
　本発明で使用する液体６２としては、レーザビームＬＢを吸収又は反射する部材であれば特に限定はなく、例えば、水やアルコールなどが好適に使用される。基板５０の交点領域への液体６２の付着は、例えばスポイト等による滴下や塗布などにより行うことができる。液体６２の付着量としては、交点領域の大きさ、使用するレーザの種類や出力等により適宜決定すればよいが、水を使用する場合には、通常、０．０１ｍＬ～０．０５ｍＬの範囲が好ましい。 The liquid 62 used in the present invention is not particularly limited as long as it is a member that absorbs or reflects the laser beam LB. For example, water or alcohol is preferably used. The liquid 62 can be attached to the intersection area of the substrate 50 by, for example, dropping or applying with a dropper or the like. The adhesion amount of the liquid 62 may be appropriately determined depending on the size of the intersection area, the type of laser used, the output, and the like. However, when water is used, it is usually in the range of 0.01 mL to 0.05 mL. preferable.
　以上、説明した各実施形態では第１スクライブライン５２ａと第２スクライブライン５２ｂとを各１本形成して基板を割断していたが、大面積の基板５０に第１スクライブライン５２ａ及び第２スクライブライン５２ｂをそれぞれ複数本の形成して、多数個の小面積基板に割断する場合も本発明の割断方法は当然ながら適用できる。また、本発明の割断方法は、２つのスクライブラインを直交させる場合の他、所望の角度で交点させる場合にももちろん適用できる。 As described above, in each of the embodiments described above, each of the first scribe line 52a and the second scribe line 52b is formed to cleave the substrate. However, the first scribe line 52a and the second scribe line 52a are formed on the substrate 50 having a large area. Of course, the cleaving method of the present invention can also be applied to a case where a plurality of lines 52b are formed and cleaved into a large number of small area substrates. In addition, the cleaving method of the present invention can naturally be applied to a case where two scribe lines are orthogonal to each other and a point of intersection at a desired angle.
実施例１ 
　図１に示した割断装置を用いて、厚さ０．５５ｍｍの化学強化ソーダガラス基板に、その交点が４０個となるように互いに直行する複数本のスクライブラインを形成し、形成した一方のスクライブラインに沿ってレーザビームを照射して基板を割断した後、割断ラインともう一方のスクライブラインとの交点領域に、ガラス板（５ｍｍ×５ｍｍ×厚さ０．４ｍｍ）を載置した。そして、前記もう一方のスクライブラインに沿ってレーザビームを照射して基板を複数個に割断した。ガラス基板の割断は、図３に示す方法を用いて行った。結果を表１に示す。なお、レーザビームの具体的照射条件は下記の通りである。 Example 1
Using the cleaving apparatus shown in FIG. 1, a plurality of scribe lines perpendicular to each other are formed on a chemically strengthened soda glass substrate having a thickness of 0.55 mm so that there are 40 intersections. After irradiating the laser beam along the line and cleaving the substrate, a glass plate (5 mm × 5 mm × thickness 0.4 mm) was placed in the intersection area between the cleaving line and the other scribe line. Then, the substrate was cut into a plurality of pieces by irradiating a laser beam along the other scribe line. The cleaving of the glass substrate was performed using the method shown in FIG. The results are shown in Table 1. The specific irradiation conditions of the laser beam are as follows.
（第１スクライブライン形成のレーザビーム照射条件） 
　レーザ種類：ＣＯ２レーザ 
　レーザ出力：１００Ｗ 
　相対移動速度：１００ｍｍ／ｓｅｃ 
　レーザスポット：楕円形  (Laser beam irradiation conditions for forming the first scribe line)
Laser type: CO 2 laser
Laser output: 100W
Relative moving speed: 100mm / sec
Laser spot: elliptical
（第２スクライブライン形成のレーザビーム照射条件） 
　レーザ種類：ＣＯ２レーザ 
　レーザ出力：１２０Ｗ 
　相対移動速度：２００ｍｍ／ｓｅｃ 
　レーザスポット：楕円形  (Laser beam irradiation conditions for forming the second scribe line)
Laser type: CO 2 laser
Laser output: 120W
Relative moving speed: 200mm / sec
Laser spot: elliptical
（レーザブレイクのレーザビーム照射条件） 
　レーザ種類：ＣＯ２レーザ 
　レーザ出力：３２０Ｗ 
　相対移動速度：１５００ｍｍ／ｓｅｃ 
　レーザスポット：楕円形  (Laser break laser beam irradiation conditions)
Laser type: CO 2 laser
Laser output: 320W
Relative moving speed: 1500mm / sec
Laser spot: elliptical
比較例１ 
　交点領域にガラス板を載置しなかった以外は実施例１と同様にして基板の割断を行った。結果を表１に合わせて示す。  Comparative Example 1
The substrate was cleaved in the same manner as in Example 1 except that the glass plate was not placed in the intersection area. The results are shown in Table 1.
Figure JPOXMLDOC01-appb-T000001
　「欠け」　　：交点部分に欠けが生じた。 
　「交点トビ」：交点から、レーザビームの相対移動方向下流側に割断ラインが伸展しな 
　　　　　　　　かった。 
Figure JPOXMLDOC01-appb-T000001
“Deficit”: A deficiency occurred at the intersection.
“Intersection point”: The cleaving line does not extend from the intersection point to the downstream side of the relative movement direction of the laser beam.
won.
　表１から理解されるように、実施例１の割断方法では４０個の交点の内、すべての交点で割断良好であったのに対し、比較例１の割断方法ではわずか３個の交点が割断良好で、残る３７個の交点で欠けが発生した。 As can be seen from Table 1, the cleaving method of Example 1 had good cleaving at all of the 40 intersections, whereas the cleaving method of Comparative Example 1 cleaved only 3 intersections. Good and chipped at the remaining 37 intersections.
　実施例２ 
　ガラス板に替えての水（付着量：０．０４ｍＬ，直径８～１０ｍｍ）を交点領域に付着させた以外は実施例１と同様にしてガラス基板を割断した。結果を表２に示す。なお、レーザビームの具体的照射条件は下記の通りである。 Example 2
The glass substrate was cleaved in the same manner as in Example 1 except that water (attachment amount: 0.04 mL, diameter 8 to 10 mm) instead of the glass plate was attached to the intersection region. The results are shown in Table 2. The specific irradiation conditions of the laser beam are as follows.
（第１スクライブライン形成のレーザビーム照射条件） 
　レーザ種類：ＣＯ２レーザ 
　レーザ出力：１００Ｗ 
　相対移動速度：１００ｍｍ／ｓｅｃ 
　レーザスポット：楕円形  (Laser beam irradiation conditions for forming the first scribe line)
Laser type: CO 2 laser
Laser output: 100W
Relative moving speed: 100mm / sec
Laser spot: elliptical
（第２スクライブライン形成のレーザビーム照射条件） 
　レーザ種類：ＣＯ２レーザ 
　レーザ出力：１３０Ｗ 
　相対移動速度：１８０ｍｍ／ｓｅｃ 
　レーザスポット：楕円形  (Laser beam irradiation conditions for forming the second scribe line)
Laser type: CO 2 laser
Laser output: 130W
Relative movement speed: 180mm / sec
Laser spot: elliptical
（レーザブレイクのレーザビーム照射条件） 
　レーザ種類：ＣＯ２レーザ 
　レーザ出力：２４０Ｗ 
　相対移動速度：１５００ｍｍ／ｓｅｃ 
　レーザスポット：楕円形  (Laser break laser beam irradiation conditions)
Laser type: CO 2 laser
Laser output: 240W
Relative moving speed: 1500mm / sec
Laser spot: elliptical
比較例２ 
　交点領域に水滴を付着させなかった以外は実施例２と同様にして基板の割断を行った。結果を表２に合わせて示す。  Comparative Example 2
The substrate was cleaved in the same manner as in Example 2 except that no water droplet was attached to the intersection area. The results are shown in Table 2.
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
　表２から理解されるように、交点領域に水滴を付着させた実施例２の割断方法では４０個の交点の内、すべての交点で割断良好であったのに対し、比較例２の割断方法ではわずか２個の交点が割断良好で、残る３８個の交点で欠けが発生した。 As understood from Table 2, in the cleaving method of Example 2 in which water droplets were attached to the intersection area, the cleaving method of Comparative Example 2 was satisfactory in all of the 40 intersecting points. Then, only 2 intersections were cleaved, and the remaining 38 intersections were chipped.
　本発明の割断方法によれば、レーザを用いて互いに交差する２方向に脆性材料基板を割断する場合に、交点部分における欠けの発生を抑制でき有用である。 According to the cleaving method of the present invention, when a brittle material substrate is cleaved in two directions intersecting each other using a laser, the occurrence of chipping at the intersection is useful.
　　３７　　冷却ノズル 
　　５０　　脆性材料基板 
　　５１，５１ａ，５１ｂ　　割断予定ライン 
　　５２　　スクライブライン 
　　５２ａ　第１スクライブライン 
　　５２ｂ　第２スクライブライン 
　　５３，５３ａ，５３ｂ　　垂直クラック 
　　６１　　被覆部材 
　　６２　　液体 
　　ＬＢ　　レーザビーム  37 Cooling nozzle
50 Brittle material substrate
51, 51a, 51b Scheduled cutting line
52 Scribe Line
52a First scribe line
52b Second scribe line
53, 53a, 53b Vertical crack
61 Covering member
62 liquid
LB laser beam

Claims (7)

  1. 　互いに交差する、垂直クラックからなる第１スクライブラインと第２スクライブラインとを脆性材料基板に形成する工程と、第１スクライブライン及び第２スクライブラインに沿ってレーザビームを相対移動させながら照射して前記垂直クラックを伸展させて、第１スクライブライン及び第２スクライブラインで前記基板を割断する工程とを含む脆性材料基板の割断方法であって、
    　第１スクライブライン及び／又は第２スクライブラインに沿ってレーザビームを照射する際に、第１スクライブラインと第２スクライブラインとの交点領域へのレーザビーム照射量を、交点領域以外のレーザビーム照射量よりも減少させることを特徴とする脆性材料基板の割断方法。     A process of forming a first scribe line and a second scribe line made of vertical cracks intersecting each other on a brittle material substrate, and irradiating the laser beam while relatively moving along the first scribe line and the second scribe line. A method of cleaving a brittle material substrate, comprising extending the vertical crack and cleaving the substrate at a first scribe line and a second scribe line,
    When irradiating the laser beam along the first scribe line and / or the second scribe line, the laser beam irradiation amount to the intersection area between the first scribe line and the second scribe line is set as the laser beam irradiation other than the intersection area. A method for cleaving a brittle material substrate, wherein the amount is less than the amount.
  2. 　第１スクライブラインと第２スクライブラインとの交点領域へのレーザビーム照射量を、交点領域以外のレーザビーム照射量の５０％以下とする請求項１記載の割断方法。 The cleaving method according to claim 1, wherein the laser beam irradiation amount to the intersection area between the first scribe line and the second scribe line is 50% or less of the laser beam irradiation amount other than the intersection area.
  3. 　レーザビーム出力を制御することによって、第１スクライブラインと第２スクライブラインとの交点領域へのレーザビーム照射量を減少させる請求項１又は２記載の割断方法。 3. The cleaving method according to claim 1 or 2, wherein the amount of laser beam irradiation to the intersection area between the first scribe line and the second scribe line is reduced by controlling the laser beam output.
  4. 　第１スクライブラインと第２スクライブラインとの交点領域を、レーザビームを吸収又は反射する被覆部材で覆い、前記交点領域へのレーザビーム照射量を減少させる請求項１又は２記載の割断方法。 The cleaving method according to claim 1 or 2, wherein the intersection area between the first scribe line and the second scribe line is covered with a coating member that absorbs or reflects a laser beam, and the amount of laser beam irradiation to the intersection area is reduced.
  5. 　　第１スクライブラインと第２スクライブラインとの交点領域を、レーザビームを吸収又は反射する液体で覆い、前記交点領域へのレーザビーム照射量を減少させる請求項１又は２記載の割断方法。 The cleaving method according to claim 1 or 2, wherein the intersection area between the first scribe line and the second scribe line is covered with a liquid that absorbs or reflects a laser beam, and the amount of laser beam irradiation to the intersection area is reduced.
  6. 　前記交点領域が、第１スクライブラインと第２スクライブラインとの交点から、レーザビームの相対移動方向上流側及び下流側にそれぞれ５ｍｍ以下の幅を有する領域である請求項１～５のいずれかに記載の割断方法。 The intersection area is an area having a width of 5 mm or less from the intersection of the first scribe line and the second scribe line to the upstream side and the downstream side in the relative movement direction of the laser beam, respectively. The cleaving method described.
  7. 　第１スクライブライン及び第２スクライブラインは、前記基板に対してレーザビームを相対移動させながら照射して、前記基板を溶融温度未満に加熱した後、前記基板に対して冷却媒体を吹き付けて冷却し、前記基板に生じた熱応力によって形成する請求項１～６のいずれかに記載の割断方法。 The first scribe line and the second scribe line irradiate the substrate while moving the laser beam relative to the substrate to heat the substrate to below the melting temperature, and then cool the substrate by spraying a cooling medium. The cleaving method according to any one of claims 1 to 6, wherein the cleaving method is formed by thermal stress generated in the substrate.
PCT/JP2011/079842 2011-12-22 2011-12-22 Method for fracturing brittle material substrate WO2013094059A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI681241B (en) * 2018-12-04 2020-01-01 友達光電股份有限公司 Manufacturing method for display device and display device utilized thereof

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6387695B2 (en) * 2014-06-13 2018-09-12 三星ダイヤモンド工業株式会社 Breaking device for brittle material substrate
CN105436712B (en) * 2015-12-07 2017-12-12 武汉铱科赛科技有限公司 The fragility splinter method and system of a kind of brittle semiconductor materials
CN109080005B (en) * 2018-08-20 2020-10-02 衡阳恒裕轻质保温材料有限责任公司 High-precision cutting device for aerated concrete blocks
CN110465755A (en) * 2019-07-10 2019-11-19 阜宁苏民绿色能源科技有限公司 A method of improving mark point crack

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001058281A (en) * 1999-06-18 2001-03-06 Mitsuboshi Diamond Industrial Co Ltd Scribing method using laser beam
JP2009090598A (en) * 2007-10-11 2009-04-30 Mitsuboshi Diamond Industrial Co Ltd Curved crack-forming method of brittle material substrate, and brittle material substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100626983B1 (en) * 1999-06-18 2006-09-22 미쓰보시 다이야몬도 고교 가부시키가이샤 Scribing method by use of laser
JP4256724B2 (en) * 2003-06-05 2009-04-22 三星ダイヤモンド工業株式会社 Method and apparatus for scribing brittle material substrate
WO2006011608A1 (en) * 2004-07-30 2006-02-02 Mitsuboshi Diamond Industrial Co., Ltd. Vertical crack forming method and vertical crack forming device in substrate
US20100247836A1 (en) * 2007-11-07 2010-09-30 Claus Peter Kluge Method for the laser ablation of brittle components
CN101910076B (en) * 2007-12-27 2013-01-30 三星钻石工业股份有限公司 Method for forming cracks on substrate made of brittle material
JP2010184457A (en) * 2009-02-13 2010-08-26 Mitsuboshi Diamond Industrial Co Ltd Method for dividing brittle material substrate
JP2011230940A (en) 2010-04-26 2011-11-17 Mitsuboshi Diamond Industrial Co Ltd Cutting method for brittle material substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001058281A (en) * 1999-06-18 2001-03-06 Mitsuboshi Diamond Industrial Co Ltd Scribing method using laser beam
JP2009090598A (en) * 2007-10-11 2009-04-30 Mitsuboshi Diamond Industrial Co Ltd Curved crack-forming method of brittle material substrate, and brittle material substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI681241B (en) * 2018-12-04 2020-01-01 友達光電股份有限公司 Manufacturing method for display device and display device utilized thereof

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