WO2013078934A1 - 能减少残余浆料的化学机械抛光方法 - Google Patents

能减少残余浆料的化学机械抛光方法 Download PDF

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Publication number
WO2013078934A1
WO2013078934A1 PCT/CN2012/084033 CN2012084033W WO2013078934A1 WO 2013078934 A1 WO2013078934 A1 WO 2013078934A1 CN 2012084033 W CN2012084033 W CN 2012084033W WO 2013078934 A1 WO2013078934 A1 WO 2013078934A1
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wafer
slurry
chemical mechanical
mechanical polishing
polishing method
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PCT/CN2012/084033
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English (en)
French (fr)
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杨贵璞
曾明
范怡平
黄勇
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无锡华润上华科技有限公司
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Publication of WO2013078934A1 publication Critical patent/WO2013078934A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/12—Devices for exhausting mist of oil or coolant; Devices for collecting or recovering materials resulting from grinding or polishing, e.g. of precious metals, precious stones, diamonds or the like

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  • This invention relates to semiconductor fabrication processes, and more particularly to methods that are effective in reducing the residue of abrasives introduced during chemical mechanical polishing.
  • the surface needs to be polished in order to obtain a flat surface.
  • Chemical mechanical polishing is a commonly used polishing process that uses abrasives (typically containing silicon or alumina particles dispersed in a chemical solvent) to remove irregularities on the wafer surface.
  • abrasives typically containing silicon or alumina particles dispersed in a chemical solvent
  • the wafer is placed on a polishing disc of the polishing machine, and the abrasive is delivered to the surface of the wafer, and the polishing head grinds the surface of the wafer with an abrasive to obtain a flat surface.
  • the surface of the wafer is washed with a fluid such as deionized water to remove residual slurry or the like.
  • the present invention is directed to solving the above disadvantages, and provides a chemical mechanical polishing method capable of reducing residual abrasive, which has the advantages of convenient implementation and low implementation cost.
  • a chemical mechanical polishing method capable of reducing residual slurry comprising the following steps:
  • the fluid is deionized water, and the pH of the slurry is between 10 and 11.
  • a rate at which the slurry is transported to a surface of the wafer is set such that a pH of the surface of the wafer is between 8 and 9 between.
  • the grinding step comprises:
  • the grinding mechanism grinds a central region of a surface of the wafer
  • the polishing mechanism grinds an edge region of a surface of the wafer.
  • the rinsing step has a duration of 6 seconds.
  • the above chemical mechanical polishing method capable of reducing residual slurry, by grinding the surface of the wafer with a slurry, rinsing the surface of the wafer with a fluid to remove the slurry remaining on the surface, and during the rinsing process
  • the slurry is also transported to the surface of the wafer to buffer the surface of the wafer and the pH of the slurry, so that the surface of the wafer and the slurry form the same charge, and the residual slurry will be easier due to repelling.
  • the solution makes the residual slurry easier to rinse by conveying the existing slurry during the rinsing process, and is convenient to implement and low in implementation cost.
  • Figure 1 shows a schematic of a typical polishing apparatus for a chemical mechanical polishing process.
  • FIG. 2 is a schematic view of a chemical mechanical polishing method in accordance with a preferred embodiment of the present invention.
  • FIG. 3 is a comparison diagram of effects of processing a wafer by a chemical mechanical polishing method of the prior art and a chemical mechanical polishing method according to a preferred embodiment of the present invention, respectively.
  • wafer as used herein generally refers to a circular single crystal semiconductor substrate having integrated circuits formed thereon.
  • FIG. 1 shows a schematic of a typical polishing apparatus 10 for a chemical mechanical polishing process.
  • the apparatus 10 includes a polishing head 110 carrying a wafer 20 including a substrate 20A, a semiconductor device 20B formed on a substrate, and a silicon oxide protective layer 20C covering the device, a polishing pad 120, and a grinding disk supporting the polishing pad 120. 130.
  • the polishing head 110 includes a stationary ring 110A that houses the wafer 20 and a diaphragm 110B that is disposed between the wafer 20 and the inner wall of the stationary ring.
  • the polishing apparatus 10 typically includes a controller (not shown) under which control is applied to the back side of the wafer 20 (i.e., the surface of the substrate 20A) through the diaphragm 110B, the polishing head 110 and the grinding.
  • the discs 130 are independently rotated at varying speeds, and the slurry 30 and/or other materials are delivered to the surface of the wafer 20 (i.e., the surface of the silicon oxide protective layer 20C) at a constant flow rate.
  • the desired grinding pressure is formed on the back side of the wafer 20 through the diaphragm 110B during operation of the apparatus.
  • the grinding head 110 rotates around the rotating shaft 140 at a preset speed
  • the grinding disc 130 rotates around the rotating shaft 150 at a preset speed.
  • the slurry 30 may contain silica particles or alumina particles, preferably having a pH between 10-11 and an average particle size of 20-200 nm.
  • the surface of the silicon oxide protective layer of the wafer 20 is ground to the desired flatness. And thickness.
  • the polishing head 110 and the grinding disc 130 are still in a rotating state (but the rotation speed may be different from that during the grinding), and a cleaning mechanism (not shown) sprays deionized water onto the surface of the silicon oxide protective layer 20C to remove the residual surface. Slurry.
  • the wafer 20 is taken out from the fixing ring 110A of the polishing head 110 after the cleaning is completed, and then the cleaning mechanism can spray deionized water to the grinding disk 130 to clear the slurry remaining on the grinding disk.
  • FIG. 2 is a schematic view of a chemical mechanical polishing method in accordance with a preferred embodiment of the present invention.
  • the polishing apparatus 10 shown in FIG. 1 is taken as an example here. It should be noted, however, that the method of the present invention is also suitable for polishing equipment of other configurations.
  • the inventors of the present invention have found through intensive research that if the slurry is added during the cleaning of the wafer 20, not only the amount of slurry remaining on the surface of the wafer is not increased, but also the residual amount can be remarkably reduced. This is because when the wafer is cleaned, the added slurry acts to buffer the pH (even if the pH of the wafer surface is closer to the pH of the paste), thereby between the wafer 20 and the polishing pad 120. The potentials are close or equal, which causes the wafer surface and the paste to form the same charge. Due to the repulsive action, the residual slurry will be more easily removed from the wafer surface. Based on the above findings, in the present embodiment, in addition to spraying a fluid such as deionized water onto the surface of the wafer, the slurry is simultaneously transferred to the surface of the wafer.
  • a fluid such as deionized water
  • step 210 the wafer 20 is loaded into the stationary ring 110A of the polishing head 110.
  • step 220 the slurry 30 is transferred to the surface of the silicon oxide protective layer of the wafer 20.
  • step 230 a downward pressure is applied to the wafer 20 through the diaphragm 110B of the polishing head 110, so that the polishing pad 120 grinds the central region of the surface of the silicon oxide protective layer 20C by the slurry 30.
  • the duration of the grinding process depends on the flatness and thickness of the wafer to be achieved.
  • step 240 the edge regions of the surface of the silicon oxide protective layer 20C are ground to have the same or similar flatness and thickness as the central regions.
  • a cleaning mechanism (not shown) sprays a high-pressure fluid (for example, plasma water) onto the surface of the silicon oxide protective layer 20C.
  • a high-pressure fluid for example, plasma water
  • the slurry 30 is still sent to the surface of the silicon oxide protective layer 20C.
  • both the wafer 20 and the grinding disc 130 are in a rotating state, so both the deionized water and the slurry 30 can enter the surface of the silicon oxide protective layer 20C, so that the pH of the surface of the silicon oxide protective layer 20C is relatively close to the pH of the slurry 30. Value, thus facilitating the removal of residual slurry.
  • the pH of the slurry is between 10 and 11
  • the rinsing fluid is deionized water
  • the pH near the surface of the silicon oxide protective layer 20C during cleaning is between 8 and 9
  • the pH near the surface of the silicon oxide protective layer 20C is about 7.
  • step 260 the wafer 20 is removed from the fixed ring 110A, and the polishing pad or the like is cleaned. At this time, the conveyance of the slurry is stopped, and only the flushing fluid is used for the flushing.
  • FIG. 3 is a comparison diagram of effects of processing a wafer by a chemical mechanical polishing method of the prior art and a chemical mechanical polishing method according to a preferred embodiment of the present invention, wherein the upper half of the figure corresponds to a chemical machine using the prior art.
  • the baseline defect map of the wafer processed by the polishing method, and the lower half of the map corresponds to the baseline defect map of the wafer processed by the chemical mechanical polishing method in accordance with the preferred embodiment of the present invention.
  • the wafer is divided into a plurality of small pieces, with black marks being defective pieces.
  • the number of defective patches is significantly reduced.
  • the table below shows an exemplary polishing equipment process setup menu.
  • the process includes steps such as Ramp up, Main polish, Edge polish, Rinse1, and Rinse2 (step1). -step5), for each step, the grinding head rotation speed (Head RPM) and acceleration (Head Accel), the grinding disc rotation speed (Platen RPM) and acceleration (Platen Accel), the polishing head scanning pattern (Head) Type, Zone and speed under the Sweep column, Rinse selection, slurry flow (Deliv1 (ml/min)), flushing fluid flow (Deliv2 (ml/min)) and each step Parameters such as duration (By time/Endpoint).

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

一种半导体制造工艺，能有效减少在化学机械抛光过程中引入的研磨剂残留。包括以下步骤：研磨步骤，利用浆料（30）来研磨晶圆（20）的表面；冲洗步骤，利用流体冲洗晶圆（20）的表面以去除残留在表面的浆料（30）。其中，在冲洗步骤中还向晶圆（20）的表面输送浆料（30）。

Description

能减少残余浆料的化学机械抛光方法
【技术领域】
本发明涉及半导体制造工艺，尤其涉及能有效减少在化学机械抛光过程中引入的研磨剂残留的方法。
【背景技术】
在晶圆制造过程中，为了获得平坦的表面需要对其表面进行抛光。化学机械抛光是一种常用的抛光工艺，其利用研磨剂（一般包含弥散在化学溶剂内的硅或氧化铝颗粒）去除晶圆表面的凹凸不平。在抛光时，晶圆被设置在抛光机的研磨盘上，研磨剂被输送到晶圆表面，研磨头利用研磨剂来研磨晶圆表面，以获得平坦的表面。在结束研磨后，利用流体（例如去离子水）冲刷晶圆表面以将残留的浆料等去除掉。
但是冲刷的效果往往是不能令人满意的，这导致晶圆表面有较多的残留浆料，从而影响产品的良率。对此，常常采用更换耗材或定期清洗抛光机等措施，但是这些方式费时费力，还增加了制造成本。另一种方法是通过调整清洗机的化学品流量、减小清洗刷与晶圆表面之间的间隙等手段，但是经常调整流量计会减少其使用寿命，而减小清洗刷间隙的效果并不明显。
【发明内容】
本发明旨在解决上述缺点，提供一种能减少残余研磨剂的化学机械抛光方法，其具有实现方便、实施成本低的优点。
本发明的上述目的通过下列技术方案实现：
一种能减少残余浆料的化学机械抛光方法，包括下列步骤：
研磨步骤，利用浆料来研磨晶圆的表面；以及
冲洗步骤，利用流体冲洗所述晶圆的表面以去除残留在所述表面的浆料，其中，在所述冲洗步骤中还向所述晶圆的表面输送所述浆料。
优选地，在上述化学机械抛光方法中，所述流体为去离子水，所述浆料的PH值介于10-11之间。
优选地，在上述化学机械抛光方法中，在所述冲洗步骤中，所述浆料向所述晶圆的表面输送的速率设定为使得所述晶圆的表面的PH值介于8-9之间。
优选地，在上述化学机械抛光方法中，所述研磨步骤包括：
所述研磨机构研磨所述晶圆的表面的中央区域；以及
所述研磨机构研磨所述晶圆的表面的边缘区域。
优选地，在上述化学机械抛光方法中，所述冲洗步骤持续时间为6秒钟。
上述能减少残余浆料的化学机械抛光方法，通过利用浆料来研磨晶圆的表面，利用流体冲洗所述晶圆的表面以去除残留在所述表面的浆料，并在所述冲洗过程中还向所述晶圆的表面输送所述浆料，缓冲了晶圆表面与浆料的PH值，使晶圆表面和浆料形成同种电荷，由于相斥作用，残留的浆料将更容易脱离晶圆表面，本方案通过在冲洗过程中输送已有的浆料，使残留的浆料更容易冲洗，而且实现方便、实施成本低。
从结合附图的以下详细说明中，将会使本发明的上述和其它目的及优点更加完全清楚。
【附图说明】
图1示出了一种典型的用于化学机械抛光工艺的抛光设备的示意图。
图2为按照本发明较佳实施例的化学机械抛光方法的示意图。
图3为分别利用现有技术的化学机械抛光方法和按照本发明较佳实施例的化学机械抛光方法处理晶圆的效果对照图。
【具体实施方式】
下面通过参考附图描述本发明的具体实施方式来阐述本发明。但是需要理解的是，这些具体实施方式仅仅是示例性的，对于本发明的精神和保护范围并无限制作用。
在本说明书中，“包含”和“包括”之类的用语表示除了具有在说明书和权利要求书中有直接和明确表述的单元和步骤以外，本发明的技术方案也不排除具有未被直接或明确表述的其它单元和步骤的情形。再者，术语“晶圆”在这里通常指的是圆形的单晶半导体衬底，其上形成有集成电路。
图1示出了一种典型的用于化学机械抛光工艺的抛光设备10的示意图。该设备10包括承载晶圆20（其包括衬底20A、形成于衬底上的半导体器件20B和覆盖器件的氧化硅保护层20C）的研磨头110、研磨垫120和支承研磨垫120的研磨盘130。研磨头110包括容纳晶圆20的固定环110A和设置在晶圆20与固定环内壁之间的隔膜110B。
抛光设备10通常包含控制器（未画出），在该控制器的控制下，适当的压力通过隔膜110B施加在晶圆20的背面上（也即衬底20A的表面），研磨头110和研磨盘130可以变化的速度分别独立地旋转，并且浆料30和/或其它材料按照一定的流量被输送到晶圆20的表面（即氧化硅保护层20C的表面）。
在设备运行期间，通过隔膜110B在晶圆20的背面形成所需的研磨压力。与此同时，研磨头110围绕转轴140以预设的速度旋转，而研磨盘130围绕转轴150以预设的速度旋转。根据被研磨表面的类型，浆料30中可包含氧化硅颗粒或氧化铝颗粒，PH值比较好的是介于10-11之间并且平均粒径为20-200纳米。在隔膜110B施加的下压力、研磨头110和研磨盘130的各自的旋转以及浆料30的化学和机械效应的共同作用下，晶圆20的氧化硅保护层表面被研磨到所需的平坦度和厚度。
在完成研磨之后，研磨头110和研磨盘130仍然处于旋转状态（但是转速可以不同于研磨时），清洗机构（未画出）向氧化硅保护层20C的表面喷射去离子水以去除残留在表面的浆料。晶圆20在完成清洗之后从研磨头110的固定环110A上取出，随后清洗机构可向研磨盘130喷射去离子水以清楚残留在研磨盘上的浆料。
图2为按照本发明较佳实施例的化学机械抛光方法的示意图。为阐述方便，这里以图1所示的抛光设备10为例。但是需要指出的是，本发明的方法也适合于其他结构的抛光设备。
本发明的发明人经过深入研究后发现，在清洗晶圆20时如果加入浆料，不仅不会增加晶圆表面的浆料残留量，相反还能明显减少残留量。这是因为在清洗晶圆时，加入的浆料起到了缓冲PH值的作用（也即使晶圆表面的PH值更为接近浆料的PH值），从而使得晶圆20与研磨垫120之间的电势接近或相等，这导致晶圆表面和浆料形成同种电荷。由于相斥作用，残留的浆料将更容易脱离晶圆表面。基于上述发现，在本实施例中，清洗时除了向晶圆表面喷射去离子水之类的流体之外，还同时向晶圆表面输送浆料。
如图2所示，首先在步骤210中，将晶圆20装载入研磨头110的固定环110A。
接着进入步骤220，此时开始向晶圆20的氧化硅保护层表面输送浆料30。
随后在步骤230中，通过研磨头110的隔膜110B向晶圆20施加下压力，使得研磨垫120借助浆料30对氧化硅保护层20C的表面的中央区域进行研磨。该研磨过程持续的时间根据所需达到的晶圆的平坦度和厚度而定。
在结束中央区域的研磨之后进入步骤240中，开始对氧化硅保护层20C表面的边缘区域进行研磨，以使边缘区域与中央区域具有相同或相近的平坦度和厚度。
接着进入步骤250，开始进入清洗过程。此时，清洗机构（未画出）向氧化硅保护层20C表面喷射高压流体（例如等离子水）。如上所述，与现有技术不同，在本实施例中，浆料30仍然被送往氧化硅保护层20C表面。此时晶圆20和研磨盘130均处于旋转状态，因此去离子水和浆料30都能够进入氧化硅保护层20C表面，使得氧化硅保护层20C表面的PH值比较接近于浆料30的PH值，因此有利于残余浆料的去除。在一个具体应用的实例中，浆料的PH值介于10-11之间，冲洗流体为去离子水，因此清洗时氧化硅保护层20C表面附近的PH值介于8-9之间，而在仅采用去离子水时，氧化硅保护层20C表面附近的PH值为7左右。
随后在步骤260中，将晶圆20从固定环110A取下，对研磨垫等进行清洗。此时，停止输送浆料，仅采用冲洗流体进行冲刷。
图3为分别利用现有技术的化学机械抛光方法和按照本发明较佳实施例的化学机械抛光方法处理晶圆的效果对照图，其中上半部分的图对应的是利用现有技术的化学机械抛光方法处理的晶圆的基线缺陷图，而下半部分的图对应的是利用按照本发明较佳实施例的化学机械抛光方法处理的晶圆的基线缺陷图。
在图3中，晶圆被划分为多个小片，其中带黑色标记的为有缺陷的小片。由图可见，在利用本发明较佳实施例的化学机械抛光方法处理后的晶圆中，有缺陷小片的数量明显减少。
下表所示为一个示例性的抛光设备工艺流程设置菜单。如该表所见，该流程包含转速缓慢增加（Ramp up）、中央区域研磨 （Main polish）、边缘区域研磨 （ Edge polish）、晶圆清洗（Rinse1）和研磨垫清洗（Rinse2）等步骤（step1-step5），对于每个步骤，都可以预先设置研磨头的转速 （ Head RPM）和加速度（Head Accel）、研磨盘的转速 （Platen RPM）和加速度 （Platen Accel）、研磨头的扫描图案（Head Sweep栏下的Type、Zone和speed）、清洗模式 （Rinse）的选定、浆料的流量 （Deliv1（ml/min））、冲洗流体的流量 （Deliv2（ml/min））和每个步骤的延续时间（By time/Endpoint）等参数。在将上述实施例应用于上述抛光设备时，无需改变设备的结构，只需对工艺流程设置菜单作少量修改即可显著减少晶圆表面的浆料残余量，这是本发明一个突出的优点。
Item step1 step2 step3 step4 step5
Step Description Ramp up Main Polish Edge Polish rinse1 rinse2
Platen RPM xxx xxx xxx xxx xxx
Platen Accel xxx xxx xxx xxx xxx
Head RPM xxx xxx xxx xxx xxx
Head Accel xxx xxx xxx xxx xxx
Head Sweep Type no sinusoidal sinusoidal no no
Head Sweep Zone xxx xxx xxx xxx xxx
Head Sweep Speed xxx xxx xxx xxx xxx
Rinse no no no Y Y
Deliv1(ml/min) 150 150 150 150 no
Deliv2(ml/min) no no no no DI:150
Bytime/Endpoint 4 by APC 10 6 8
应该理解到的是：上述实施例只是对本发明的说明，而不是对本发明的限制，任何不超出本发明实质精神范围内的发明创造均落入本发明保护范围之内。

Claims (5)

  1. 一种能减少残余浆料的化学机械抛光方法，包括下列步骤：
    研磨步骤，利用浆料来研磨晶圆的表面；以及
    冲洗步骤，利用流体冲洗所述晶圆的表面以去除残留在所述表面的浆料，
    其中，在所述冲洗步骤中还向所述晶圆的表面输送所述浆料。
  2. 如权利要求1所述的化学机械抛光方法，其中，所述流体为去离子水，所述浆料的PH值介于10-11之间。
  3. 如权利要求2所述的化学机械抛光方法，其中，在所述冲洗步骤中，所述浆料向所述晶圆的表面输送的速率设定为使得所述晶圆的表面的PH值介于8-9之间。
  4. 如权利要求1所述的化学机械抛光方法，其中，所述研磨步骤包括：
    研磨所述晶圆的表面的中央区域；以及
    研磨所述晶圆的表面的边缘区域。
  5. 如权利要求1所述的化学机械抛光方法，其中，所述冲洗步骤持续时间为6秒钟。
PCT/CN2012/084033 2011-11-28 2012-11-02 能减少残余浆料的化学机械抛光方法 WO2013078934A1 (zh)

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CN104802068B (zh) * 2014-01-24 2017-05-10 中芯国际集成电路制造(上海)有限公司 化学机械抛光方法
CN107398780B (zh) * 2016-05-18 2020-03-31 上海新昇半导体科技有限公司 一种晶圆的双面抛光方法

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