WO2013075650A1 - Encapsulation method for image sensor chip and camera module - Google Patents

Encapsulation method for image sensor chip and camera module Download PDF

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Publication number
WO2013075650A1
WO2013075650A1 PCT/CN2012/085104 CN2012085104W WO2013075650A1 WO 2013075650 A1 WO2013075650 A1 WO 2013075650A1 CN 2012085104 W CN2012085104 W CN 2012085104W WO 2013075650 A1 WO2013075650 A1 WO 2013075650A1
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Prior art keywords
image sensor
adhesive
viscosity
variable
substrate
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PCT/CN2012/085104
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French (fr)
Chinese (zh)
Inventor
霍介光
李�杰
赵立新
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格科微电子（上海）有限公司
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Publication of WO2013075650A1 publication Critical patent/WO2013075650A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02371—Disposition of the redistribution layers connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/13001—Core members of the bump connector
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    • H01L2224/13023—Disposition the whole bump connector protruding from the surface
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

Definitions

  • the present invention relates to the field of semiconductors, and more particularly to a method of packaging an image sensor chip and a camera module. Background technique
  • Image sensors are developed on the basis of optoelectronic technology, which is a sensor that can sense optical image information and convert it into usable output signals.
  • Image sensors can improve the visual range of the human eye, enable people to see the microscopic world and macroscopic world that are invisible to the naked eye, see what happens when people are temporarily unable to reach, and see various physical and chemical changes that go beyond the visual range of the naked eye.
  • the image sensor functions in the form of an image sensor chip that senses optical image information and converts it into usable output signals.
  • a packaged image sensor is formed by a series of packaging processes on an image sensor wafer for use in a variety of optical applications such as digital cameras, digital video cameras, and the like.
  • the conventional packaging process for the image sensor wafer generally includes the following steps: First, the photosensitive surface of the image sensor wafer is bonded to the glass by a sealing adhesive including epoxy resin such as AB glue; secondly, the image sensor is The opposite side of the photosensitive surface of the wafer is thinned by, for example, a grinding process; again, after the image sensor wafer is thinned, the image sensor wafer is etched to form a through hole, and the through hole is injected A metal liquid such as copper is used to electrically connect the pads of the wafer to the solder balls by copper after cooling; finally, the image sensor wafer is cut to obtain a separate image sensor chip. Thereby an image sensor chip as shown in Fig. 1 is formed. The packaged chip shown will contain a chip and a piece of glass covering its photosensitive surface. Selected as optical glass.
  • the image sensor chip 10 shown in FIG. 1 includes a glass 101, a wafer substrate 102, a solder material 103, an electrical contact portion 104, an adhesive 105 (such as an AB paste containing epoxy resin), a photosensitive surface 106, and a pad.
  • an adhesive 105 such as an AB paste containing epoxy resin
  • the glass 101 is adhered to the photosensitive surface 106 by the adhesive 105, preferably optical glass, so that light may be lost during entering the photosensitive surface 106 of the image sensor chip through the glass 101, and may be formed by scattering.
  • the image is degraded, and the price of the optical glass is relatively expensive, which also increases the cost of the image sensor chip. Summary of the invention
  • a method of packaging an image sensor chip comprising the steps of: A. bonding a photosensitive surface of an image sensor wafer to a substrate by a variable viscosity adhesive; B. connecting the pad of the image sensor to the solder material on the back side of the image sensor wafer; C. cutting the image sensor wafer to obtain a separate image sensor chip; D. changing the viscosity variable adhesive The tackiness is to peel the substrate from the separate image sensor chip.
  • Such a packaging method reduces the loss of light entering the photosensitive surface of the image sensor chip, and also improves the image formation due to scattering, since the optical glass is not required, thereby also reducing the image sensor chip. cost.
  • the method further comprises the step of: thinning the image sensor wafer from the back side of the image sensor wafer. Thinning the image sensor wafer enables the formation of thinner image sensor chips, thereby reducing the size of the packaged image sensor chip.
  • the pad of the image sensor is connected to the solder material on the back side of the wafer of the image sensor by a side lead or a via.
  • a method of packaging the image sensor chip comprises: - coating the variable viscosity adhesive on the substrate; - partially etching the variable viscosity adhesive; - bonding the substrate to the image sensor a photosensitive surface of the wafer, wherein the variable viscosity adhesive is located in a non-photosensitive area of the image sensor wafer.
  • the step A of the packaging method of the image sensor chip comprises: - coating the variable viscosity adhesive on a photosensitive surface of the image sensor wafer; Partially etching the variable viscosity adhesive to remove the viscosity-variable adhesive of the photosensitive region of the image sensor wafer; - bonding the substrate to the image sensor wafer Photosensitive surface.
  • the substrate bonded to the photosensitive surface of the image sensor wafer allows the photosensitive region of the image sensor to be hermetically covered, thereby preventing the photosensitive region from adhering with dust or metal particles during packaging to affect device performance.
  • the step A of the packaging method of the image sensor chip comprises: - coating the variable viscosity adhesive on the substrate; - etching the package in a portion An adhesive; - bonding the substrate to a photosensitive surface of the image sensor wafer, wherein the encapsulation adhesive is on a non-photosensitive area of the image sensor wafer. Since the encapsulating adhesive separates the substrate from the image sensor wafer, the photosensitive area of the image sensor does not adhere to the viscosity-variable adhesive, thereby avoiding insufficient viscosity of the adhesive in subsequent processing. Remove the stain from the photosensitive area.
  • the step A of the packaging method of the image sensor chip comprises: - coating the packaging adhesive on a photosensitive surface of the image sensor wafer; - a partial etching station a packaging adhesive; coating the encapsulating adhesive on the substrate.
  • the viscosity-variable adhesive used in the packaging method of the image sensor chip is a hot melt adhesive or an ultraviolet photosensitive adhesive. If the viscosity-variable adhesive is a hot melt adhesive, reducing the viscosity of the viscosity-variable adhesive by heating the image sensor chip in the step D; if the viscosity is variable The adhesive is an ultraviolet photosensitive adhesive, then the image sensor chip is irradiated by ultraviolet light in the step D The viscosity of the variable viscosity adhesive is reduced. The variable viscosity adhesive after viscosity reduction is easily removed from the base or photosensitive surface.
  • the encapsulating adhesive for the encapsulation method of the image sensor chip comprises an epoxy resin.
  • a camera module including an image sensor and an optical lens above a side of a photosensitive area of the image sensor, wherein there is no solid between the image sensor photosensitive area and the optical lens Light transmissive medium.
  • Figure 1 shows a cross-sectional view of an image sensor chip fabricated in accordance with a conventional packaging method
  • Figure 2 shows a flow chart of a packaging method in accordance with the present invention
  • 3a-3k are cross-sectional schematic views showing a method of packaging an image sensor chip in accordance with an embodiment of the present invention.
  • 4a-4h are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention.
  • 5a-5g are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention.
  • 6a-6g are schematic cross-sectional views showing a packaging method of an image sensor chip according to still another embodiment of the present invention.
  • Figure 7 illustrates a camera module in accordance with one embodiment of the present invention.
  • FIG. 2 shows a flow chart of a packaging method 20 in accordance with the present invention.
  • step S201 the photosensitive surface of the image sensor wafer is bonded to the substrate by a variable viscosity adhesive, wherein the variable viscosity adhesive may be ultraviolet photosensitive adhesive or hot melt.
  • a glue subsequently, in step S202, the pad of the image sensor is connected to the solder material on the back side of the image sensor wafer, such as a solder ball, wherein the commonly used connector is followed by the above steps in step S203.
  • step S204 the process of peeling off the substrate is performed on the separated image sensor chip after cutting, that is, changing the viscosity
  • the adhesive is detached to peel the substrate from the separated image sensor chip, wherein if the variable viscosity adhesive is an ultraviolet photosensitive adhesive, the image sensor chip is irradiated by ultraviolet light Means to change the viscosity of the variable viscosity adhesive to separate the substrate from the image sensor Sheet peeling; if the variable viscosity adhesive is a hot melt adhesive, then the viscosity of the variable viscosity adhesive is changed by heating the image sensor chip to remove the substrate from The separated image sensor chip is stripped.
  • the variable viscosity adhesive is an ultraviolet photosensitive adhesive
  • the image sensor chip is irradiated by ultraviolet light Means to change the viscosity of the variable viscosity adhesive to separate the substrate from the image sensor Sheet peeling
  • the variable viscosity adhesive is a hot melt adhesive, then the viscosity of the variable viscosity adhesive is changed by heating the image sensor
  • the method further includes the step of thinning the image sensor wafer from the back side of the image sensor wafer.
  • the image sensor wafer can be thinned as much as possible to its minimum acceptable thickness, thereby meeting the requirements for miniaturization and high integration of semiconductor devices.
  • FIGS. 3a-3k show cross-sectional schematic views of a method of packaging an image sensor chip in accordance with one embodiment of the present invention.
  • an image sensor wafer 310 is provided.
  • the image sensor wafer 310 is formed with a plurality of image sensors, and a plurality of image sensors are further formed with a scribe line therebetween. Isolate different image sensors.
  • Each of the image sensors has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 310, that is, the photosensitive surface 306.
  • each image sensor it further includes a signal processing circuit region distributed around the periphery of each image sensor photosensitive region and adjacent to the dicing street, wherein the dicing channel, the signal processing circuit region, and the photosensitive surface Other areas of 306 that are not used for sensitization together constitute a non-photosensitive area.
  • the image sensor photosensitive surface 306 is further formed with a dielectric layer and an interconnect layer (not shown) disposed therein to extract circuit elements formed in the image sensor, wherein the interconnect layer further Includes pad 307.
  • a substrate 301 is provided, which is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate.
  • the substrate 301 should cover the image sensor in the image sensor wafer 310 to prevent dust, metal particles, etc. from contacting and adhering to the photosensitive area of the image sensor during packaging, testing, transportation, etc., thereby affecting the photographic effect of the image sensor and reliability.
  • a viscosity-variable adhesive 309 such as an ultraviolet photosensitive adhesive or a hot melt adhesive is applied onto a substrate 301 such as glass.
  • a viscosity-variable adhesive 309 it has a characteristic that the viscosity changes after being treated. Based on the read characteristics, the two faces bonded by the viscosity-variable adhesive 309 are easily separated by this treatment.
  • a hot melt adhesive it has a characteristic that the viscosity is remarkably lowered after being heated.
  • Ultraviolet photosensitive adhesives have the property of lowering the viscosity after being irradiated with ultraviolet light.
  • variable viscosity adhesive is schematically illustrated in the present embodiment by a hot melt adhesive or an ultraviolet photosensitive adhesive, but in practical use, the variable viscosity adhesive is not limited thereto.
  • Figure 3a shows a substrate 301 coated with UV-sensitive or hot-melt adhesive and an image sensor wafer 310 finished with a pre-package process, the viscosity-variable adhesive 309 being coated having a thickness of 2 ⁇ m to 10 (H m.
  • the viscosity-variable adhesive 309 can be applied by spin coating or spray coating so that the viscosity-variable adhesive 309 applied has better uniformity.
  • the coated viscosity-variable adhesive 309 is partially etched so as to retain only the portion between the respective sensors corresponding to the image sensor wafer 310, that is, the non-photosensitive area, and the image sensor
  • the viscosity-variable adhesive 309 of the photosensitive region is removed, as shown in Figure 3b.
  • the viscosity-variable adhesive 309 can also be applied directly to the image sensor wafer 310 by screen printing and shaped to cover a portion of the image sensor wafer 310.
  • the substrate 301 is bonded to the photosensitive surface 306 of the image sensor wafer 310 as shown in Figure 3c.
  • the opposite side of the photosensitive surface 306 of the image sensor wafer 310 may alternatively be thinned, such as by a back grinding process to reduce the image sensor wafer 310 to less than 200 microns.
  • a portion of the back surface of the image sensor wafer 310 is etched until the interconnect layer is exposed to form a recess 311 on the back side thereof.
  • the etched area is the intermediate connection portion of each image sensor in the image sensor wafer 310, that is, the scribe line area, to expose the pad 307 therein, wherein the cut surface is usually slightly inclined, as shown in FIG. 3d. show.
  • a metal material is deposited on the back side of the etched image sensor wafer 310 in Fig. 3c to form a metal layer 312 which also covers the sidewalls and bottom of the four trenches 31 1 as shown in Fig. 3e.
  • the metal layer 312 is partially etched to form a plurality of conductive leads 304, as shown in Figure 3f.
  • the conductive leads 304 respectively lead the respective pads 307 of the image sensor to a predetermined area on the back side of the image sensor wafer 310, the predetermined area being used as a solder joint area for the solder joints.
  • solder material 303 such as a solder ball, is formed in the solder joint region, as shown in Fig. 3g.
  • the image sensor wafer 310 after the above steps is cut to obtain a separate image sensor chip, as shown in Fig. 3h.
  • the substrate 301 is peeled off from each of the separated image sensor chips, that is, the viscosity of the viscosity-variable adhesive 309 is changed to peel the substrate 301 from the separated image sensor chip, wherein if the viscosity-variable adhesive 309 is used Is a UV-sensitive adhesive, then the image sensor chip is irradiated by ultraviolet light to reduce the adhesive 309 Sticky to peel the substrate 301 from the separated image sensor chip; if the adhesive 309 is a hot melt adhesive, the viscosity of the adhesive 309 is lowered by heating the image sensor chip to separate the substrate 301 from the image.
  • the sensor chip is stripped, specifically, the viscosity of the viscosity-variable adhesive 309 is changed in any of the above two manners to be in a removable state, and then the image sensor chip is fixed, and a substrate is applied thereto.
  • the force of the detachment such as the adsorption force (vacuum or static electricity) applied to the back thereof, is separated, and the adhesive 309 having a variable viscosity after separation is located on the side of the substrate 301.
  • the separated image sensor chip as shown in FIG. 3h obtains the pattern sensor chip after peeling off the substrate as shown in FIG. 3i.
  • the viscosity change transition temperature usually does not exceed 260 degrees, but it takes a certain time (after 10 minutes) that the viscosity change will be relatively large, and the image sensor is in this temperature range.
  • the chip is heat treated, such as reflow soldering, to a very short time of 260 degrees, typically only a few ten seconds, and thus does not affect the device package structure formed thereon (eg, conductive leads 304).
  • the substrate 301 is usually made of a material having ultraviolet light permeable characteristics, such as optical glass, so that it is easy to irradiate the reading substrate 301 by ultraviolet light to cause the ultraviolet photosensitive adhesive to be irradiated with ultraviolet light. This reduces the viscosity.
  • the read pattern sensor chip should be immediately mounted to the lens 314 through the bracket 313 to prevent dust in the air from adhering to the photosensitive surface of the image sensor, as shown in Fig. 3j. And then integrated with the board, as shown in Figure 3k, which is shown mounted with the lens and integrated with the board 315.
  • an image sensor wafer 410 having a plurality of image sensors formed therein, and dicing tracks are formed between the plurality of image sensors to isolate different image sensors.
  • Each image sensor has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 410, i.e., the photosensitive surface 406.
  • variable viscosity adhesive 409 such as ultraviolet photosensitive adhesive or hot melt adhesive
  • FIG. 4a shows the image sensor wafer 410 and the substrate coated with the ultraviolet photosensitive adhesive or the hot melt adhesive.
  • the viscosity-variable adhesive 409 is applied to a thickness of from 2 micrometers to 100 micrometers.
  • the viscosity-variable adhesive 409 can be applied by spin coating or spray coating to provide better uniformity of the coated viscosity-variable adhesive 409.
  • the coated viscosity-variable adhesive 409 is partially etched so as to retain only the portion between the respective sensors corresponding to the image sensor wafer 410, that is, the non-photosensitive area, as shown in FIG. 4b. Shown. In some other examples, the viscosity-variable adhesive 409 can also be applied directly to the image sensor wafer 410 by screen printing and shaped to cover a portion of the image sensor wafer 410.
  • the substrate 401 is bonded to the photosensitive surface 406 of the image sensor wafer 410 as shown in Fig. 4c.
  • the substrate 401 is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate.
  • the read substrate 401 should cover the image sensor in the image sensor wafer 410 to prevent dust, metal particles, etc. from contacting and adhering to the photosensitive area of the image sensor during packaging, testing, transportation, etc., thereby affecting the photographic effect of the image sensor and reliability.
  • the opposite side of the photosensitive surface of the image sensor wafer 410 may be thinned, such as by a back grinding process to reduce the image sensor wafer 410 to less than 200 microns.
  • the pad of the image sensor is connected to the solder material 403 on the back surface of the image sensor wafer by means of a via hole, specifically, a via hole is formed by etching from the back surface of the image sensor wafer, as shown in FIG. 4d.
  • a metal material 408, such as copper is then filled in the via, via which a plurality of pads 407 are respectively connected to the pad regions on the back side of the image sensor wafer 410, as shown in Figure 4e.
  • a solder material 403, such as a solder ball is formed in the region of the solder joint so that the solder pad 407 is electrically connected to the solder material 403 as shown in Fig. 4f.
  • variable viscosity adhesive strips the substrate from the separated image sensor chip, wherein if the variable viscosity adhesive is an ultraviolet photosensitive adhesive, then ultraviolet light is passed through Irradiating the image sensor chip to change the viscosity of the viscosity-variable adhesive to peel the substrate from the separate image sensor chip; if the viscosity-variable adhesive is heated a glue, then changing the viscosity of the viscosity-variable adhesive by heating the image sensor chip to peel the substrate from the separate image sensor chip, wherein, as shown in FIG. 4f The separate image sensor chip is obtained after stripping the substrate as shown in Figure 4h.
  • FIG. 5a-5g are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention.
  • an image sensor wafer 510 is provided.
  • a plurality of image sensors are formed in the read image sensor wafer 510, and dicing tracks are formed between the plurality of image sensors to isolate different image sensors.
  • Each of the image sensors has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 510, i.e., the photosensitive surface 506.
  • variable viscosity adhesive 509 such as an ultraviolet photosensitive adhesive or a hot melt adhesive
  • FIG. 5a shows the substrate 501 coated with the ultraviolet photosensitive adhesive or the hot melt adhesive
  • the image sensor wafer 510 of the pre-package process is completed, and the coated viscosity-variable adhesive 509 has a thickness of 2 micrometers to 100 micrometers.
  • the coated viscosity-variable adhesive 509 has better uniformity.
  • a package adhesive 520 is applied to the substrate after the viscosity-variable adhesive 509 is applied, and the package adhesive may be an AB paste including an epoxy resin, as shown in Fig. 5b.
  • the encapsulation adhesive 520 is partially etched such that only portions 521 between the respective sensors corresponding to the image sensor wafer are retained.
  • the viscosity-variable adhesive 509 at the corresponding position is also partially or completely etched away, as shown in Figure 5c.
  • the encapsulating adhesive 520 can also be applied directly to the image sensor coated with the viscosity variable adhesive 509 by screen printing.
  • Wafer 510 is formed and patterned into a pattern 521 that covers a portion of image sensor wafer 510.
  • the substrate 501 is bonded to the photosensitive surface 506 of the image sensor wafer 510, wherein the portion 521 of the package adhesive 520 that has been partially etched remains corresponding to the non-photosensitive area of the image sensor wafer 510, such as Figure 5d is shown.
  • the substrate 501 is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate.
  • the image sensor in the image sensor wafer 510 should be covered to prevent dust, metal particles, etc.
  • the photosensitive area affects the photographic effect and reliability of the image sensor.
  • the package adhesive 520 isolates the substrate 501 from the image sensor wafer 510, the photosensitive area of the image sensor does not adhere to the viscosity-variable adhesive, thereby avoiding viscosity change in subsequent processing.
  • the adhesive is not able to sufficiently remove the staining of the photosensitive area caused by the adhesive.
  • the opposite side of the photosensitive surface of the image sensor wafer 510 may alternatively be thinned, such as by a back grinding process to reduce the image sensor wafer 510 to less than 200 microns.
  • the pad of the image sensor is connected to the solder material 503 on the back surface of the image sensor wafer 510 by means of via holes, specifically, the via hole is formed by etching from the back side of the image sensor wafer 510, and then The via holes are filled with a metal material 508, such as copper, through which the plurality of pads 507 are respectively led out to the pad regions on the back side of the image sensor wafer 510.
  • a solder material 503, such as a solder ball is formed in the solder joint region to electrically connect the pad 507 to the solder material 503 as shown in Fig. 5e.
  • an image sensor chip for peeling off the substrate is performed, wherein if the viscosity variable adhesive is an ultraviolet photosensitive adhesive, the image is irradiated by ultraviolet light.
  • Sensor chip approach Like the sensor chip stripping; if the variable viscosity adhesive is a hot melt adhesive, then the viscosity of the variable viscosity adhesive is changed by heating the image sensor chip to The substrate is peeled off from the separated image sensor chip, wherein the separated image sensor chip as shown in Fig. 5f is obtained after peeling off the substrate as shown in Fig. 5g.
  • FIGS. 6a-6g are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention.
  • an image sensor wafer 610 is provided.
  • a plurality of image sensors are formed in the image sensor wafer 610, and dicing tracks are formed between the plurality of image sensors to isolate different image sensors.
  • Each of the image sensors has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 610, i.e., the photosensitive surface 606.
  • the package adhesive 620 is coated on the photosensitive surface 606 of the image sensor wafer 610.
  • the package adhesive may be an AB paste including epoxy resin, as shown in FIG. 6a, partially etched and encapsulated.
  • the agent 620 is retained only at a portion 621 between the respective sensors corresponding to the image sensor wafer, wherein the portion 621 of the package adhesive 620 that has been partially etched remains corresponding to the non-photosensitive of the image sensor wafer In the area, as shown in Figure 6b.
  • the encapsulation adhesive 620 can also be applied directly to the image sensor wafer 610 by screen printing and formed into a pattern 621 that covers a portion of the image sensor wafer 610.
  • variable viscosity adhesive 609 such as ultraviolet photosensitive adhesive or hot melt adhesive
  • FIG. 6c shows the image sensor crystal coated with the ultraviolet photosensitive adhesive or the hot melt adhesive.
  • the circle 610 and the substrate 601 are coated with the variable viscosity adhesive 609 to a thickness of from 2 micrometers to 100 micrometers.
  • the viscosity-variable adhesive 609 can be applied by spin coating or spray coating to provide better uniformity of the coated viscosity-variable adhesive 609.
  • the substrate 601 is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate.
  • the substrate 601 After bonding with the photosensitive surface 606 of the image sensor wafer 610, the image sensor in the image sensor wafer 610 should be covered to prevent dust, metal particles, etc. from contacting and adhering to the photosensitive area of the image sensor during packaging, testing, transportation, and the like. , thereby affecting the photographic effect and reliability of the image sensor.
  • the opposite side of the photosensitive surface of the image sensor wafer 610 may be thinned, such as by a back grinding process to thin the image sensor wafer 610 to less than 200 microns.
  • the pad of the image sensor is connected to the solder material 603 on the back surface of the image sensor wafer by means of a via hole, specifically, a through hole is formed by etching from the back side of the image sensor wafer, and then in the through hole
  • the middle filling metal material 608, such as copper leads a plurality of pads 607 to the solder joint area on the back surface of the image sensor wafer 610 via the metal material 608, and then forms a solder material 603, such as a solder ball, in the solder joint area.
  • the pad 607 is electrically connected to the pad material 603 as shown in FIG. 6e.
  • the substrate is peeled off from each of the separated image sensor chips, that is, the viscosity of the variable viscosity adhesive is changed to peel the substrate from the separated image sensor chip, wherein if the viscosity is variable
  • the adhesive is an ultraviolet photosensitive adhesive, and then the viscosity of the variable viscosity adhesive is changed by ultraviolet light to irradiate the image sensor chip to remove the substrate from the separated image sensor chip. Stripping; if the variable viscosity adhesive is a hot melt adhesive, then the viscosity of the variable viscosity adhesive is changed by heating the image sensor chip to remove the substrate from the substrate The separate image sensor chip is stripped, wherein a separate image sensor chip as shown in Figure 6f is obtained after stripping the substrate as shown in Figure 6g.
  • FIG. 7 illustrates a camera module in accordance with one embodiment of the present invention.
  • the camera module can be formed by the packaging method in the foregoing embodiment.
  • the camera module includes: an image sensor 701 and an optical lens 706 on the side of the photosensitive area 702 of the image sensor 701.
  • the optical lens 706 is connected to the image sensor 701 via a bracket 703. among them,
  • the opposite side of the photosensitive area 702 of the i-pixel image sensor 701 has a plurality of solder joints 704 that cause the disk 705 of the image sensor 701 to be taken out.
  • the pad 705 and the solder joint 704 can be electrically connected by side leads or vias depending on the particular application.

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Abstract

Provided are an encapsulation method for an image sensor chip and a camera module. The encapsulation method includes the steps of: adhering a photosensitive surface of an image sensor wafer to a substrate with an adhesive with variable viscosity; connecting a welding pad (705) of an image sensor (701) to a welding material (704) on the back of the image sensor wafer; cutting the image sensor wafer to obtain a separated image sensor chip; and changing the stickiness of the adhesive with variable viscosity to peel the substrate from the separated image sensor chip. The encapsulation method reduces the loss of the light rays when entering into the photosensitive surface of the image sensor chip and improves the situation where the image becomes poor due to scattering, and also lowers the costs.

Description

图像传感器芯片的封装方法以及摄像模组 技术领域  Image sensor chip packaging method and camera module
本发明涉及半导体领域， 更具体地， 涉及一种图像传感器芯片 的封装方法以及摄像模组。 背景技术  The present invention relates to the field of semiconductors, and more particularly to a method of packaging an image sensor chip and a camera module. Background technique
图像传感器是在光电技术基础上发展起来的， 所谓图像传感器， 就是能够感受光学图像信息并将其转换成可用输出信号的传感器。 图像传感器可以提高人眼的视觉范围， 使人们看到肉眼无法看到的 微观世界和宏观世界， 看到人们暂时无法到达处发生的事情， 看到 超出肉眼视觉范围的各种物理、 化学变化过程， 生命、 生理、 病变 的发生发展过程， 等等。 可见图像传感器在人们的文化、 体育、 生 产、 生活和科学研究中起到非常重要的作用。 可以说， 现代人类活 动已经无法离开图像传感器。  Image sensors are developed on the basis of optoelectronic technology, which is a sensor that can sense optical image information and convert it into usable output signals. Image sensors can improve the visual range of the human eye, enable people to see the microscopic world and macroscopic world that are invisible to the naked eye, see what happens when people are temporarily unable to reach, and see various physical and chemical changes that go beyond the visual range of the naked eye. The development of life, physiology, and pathology, and so on. Visible image sensors play a very important role in people's culture, sports, production, life and scientific research. It can be said that modern human activities have been unable to leave the image sensor.
在实际应用中， 图像传感器是以图像传感器芯片的形式发挥其 感受光学图像信息并将其转换成可用输出信号的功能的。 在半导体 生产过程中， 通过对图像传感器晶圆进行一系列封装工艺从而形成 封装好的图像传感器以用于诸如数码相机、 数码摄像机等等的多种 光学应用。 传统的对图像传感器晶圓进行的封装工艺一般包括以下 步骤： 首先， 通过包括环氧树脂的封装粘合剂诸如 AB 胶水将图像 传感器晶圓的感光面与玻璃相粘结； 其次， 将图像传感器晶圓的感 光面的相对面通过诸如磨削工艺进行减薄； 再次， 在所述图像传感 器晶圓减薄之后， 对所述图像传感器晶圓进行蚀刻以形成通孔， 并 将通孔中注入金属液例如铜， 待冷却后通过铜将晶片的焊盘与锡球 进行电连接； 最后， 切割所述图像传感器晶圆以获得分离的图像传 感器芯片。 从而形成了如图 1 所示的图像传感器芯片。 图示的封装 好的芯片都会包含一个芯片以及一片覆盖在其感光面上的玻璃， 优 选为光学玻璃。 In practical applications, the image sensor functions in the form of an image sensor chip that senses optical image information and converts it into usable output signals. In a semiconductor manufacturing process, a packaged image sensor is formed by a series of packaging processes on an image sensor wafer for use in a variety of optical applications such as digital cameras, digital video cameras, and the like. The conventional packaging process for the image sensor wafer generally includes the following steps: First, the photosensitive surface of the image sensor wafer is bonded to the glass by a sealing adhesive including epoxy resin such as AB glue; secondly, the image sensor is The opposite side of the photosensitive surface of the wafer is thinned by, for example, a grinding process; again, after the image sensor wafer is thinned, the image sensor wafer is etched to form a through hole, and the through hole is injected A metal liquid such as copper is used to electrically connect the pads of the wafer to the solder balls by copper after cooling; finally, the image sensor wafer is cut to obtain a separate image sensor chip. Thereby an image sensor chip as shown in Fig. 1 is formed. The packaged chip shown will contain a chip and a piece of glass covering its photosensitive surface. Selected as optical glass.
如图 1所示的图像传感器芯片 10,包括玻璃 101、晶圆基板 102、 焊接材料 103、 电接触部 104、 粘合剂 105 (诸如包含环氧树脂的 AB 胶） 、 感光面 106、 焊盘 107, 由于其感光面 106上通过粘合剂 105 粘有玻璃 101， 优选为光学玻璃， 从而光线在通过玻璃 101进入图像 传感器芯片的感光面 106 的过程中会有损失， 并且会由于散射而形 成图像变差， 加之光学玻璃的价格相对昂贵， 从而也增加了图像传 感器芯片的成本。 发明内容  The image sensor chip 10 shown in FIG. 1 includes a glass 101, a wafer substrate 102, a solder material 103, an electrical contact portion 104, an adhesive 105 (such as an AB paste containing epoxy resin), a photosensitive surface 106, and a pad. 107, since the glass 101 is adhered to the photosensitive surface 106 by the adhesive 105, preferably optical glass, so that light may be lost during entering the photosensitive surface 106 of the image sensor chip through the glass 101, and may be formed by scattering. The image is degraded, and the price of the optical glass is relatively expensive, which also increases the cost of the image sensor chip. Summary of the invention
因此本发明的任务在于， 提出一种改良的图像传感器芯片的封 装方法， 以提高图像传感器芯片的灵敏度。  SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide an improved method of packaging an image sensor chip to increase the sensitivity of the image sensor chip.
根据本发明的第一方面， 提出了一种图像传感器芯片的封装方 法， 所述方法包括以下步骤： A. 通过粘度可变的粘合剂将图像传感 器晶圆的感光面与基板相粘合； B. 将图像传感器的焊盘连接到所述 图像传感器晶圓背面的焊接材料； C. 切割所述图像传感器晶圆以获 得分离的图像传感器芯片； D. 改变所述粘度可变的粘合剂的粘性以 将所述基板从所述分离的图像传感器芯片剥离。 这样的封装方法减 小了光线在进入图像传感器芯片的感光面的过程中的损失， 并且也 改善了由于散射而形成图像变差的情况， 由于不需要光学玻璃， 从 而也降低了图像传感器芯片的成本。  According to a first aspect of the present invention, a method of packaging an image sensor chip is provided, the method comprising the steps of: A. bonding a photosensitive surface of an image sensor wafer to a substrate by a variable viscosity adhesive; B. connecting the pad of the image sensor to the solder material on the back side of the image sensor wafer; C. cutting the image sensor wafer to obtain a separate image sensor chip; D. changing the viscosity variable adhesive The tackiness is to peel the substrate from the separate image sensor chip. Such a packaging method reduces the loss of light entering the photosensitive surface of the image sensor chip, and also improves the image formation due to scattering, since the optical glass is not required, thereby also reducing the image sensor chip. cost.
优选地，在所述图像传感器芯片的封装方法的所述步骤 A之后， 还包括以下步骤： 从所述图像传感器晶圆的背面对所述图像传感器 晶圆进行减薄。 减薄图像传感器晶圆能够形成厚度较薄的图像传感 器芯片， 从而减小封装后图像传感器芯片的体积。  Preferably, after the step A of the packaging method of the image sensor chip, the method further comprises the step of: thinning the image sensor wafer from the back side of the image sensor wafer. Thinning the image sensor wafer enables the formation of thinner image sensor chips, thereby reducing the size of the packaged image sensor chip.
优选地， 在所述图像传感器芯片的封装方法的所述步骤 B 中， 通过侧面引线或通孔将图像传感器的焊盘连接到所述图像传感器晶 圆背面的焊接材料。  Preferably, in the step B of the packaging method of the image sensor chip, the pad of the image sensor is connected to the solder material on the back side of the wafer of the image sensor by a side lead or a via.
根据本发明的一个实施例， 所述图像传感器芯片的封装方法的 所述步骤 A包括： - 在所述基板上涂布所述粘度可变的粘合剂； - 部 分刻蚀所述粘度可变的粘合剂； - 将所述基板粘合到所述图像传感 器晶圆的感光面， 其中所述粘度可变的粘合剂位于所述图像传感器 晶圆的非感光区域。 或者根据本发明的另一实施例， 所述图像传感 器芯片的封装方法的所述步骤 A包括： - 在所述图像传感器晶圆的 感光面上涂布所述粘度可变的粘合剂； - 部分刻蚀所述粘度可变的 粘合剂， 以移除所述图像传感器晶圆的感光区域的所述粘度可变的 粘合剂； - 将所述基板粘合到所述图像传感器晶圓的感光面。 粘合 到图像传感器晶圓感光面的基板使得图像传感器的感光区域被密封 地覆盖， 从而避免了在封装过程中该感光区域粘附灰尘或金属颗粒 而影响器件性能。 According to an embodiment of the present invention, a method of packaging the image sensor chip The step A comprises: - coating the variable viscosity adhesive on the substrate; - partially etching the variable viscosity adhesive; - bonding the substrate to the image sensor a photosensitive surface of the wafer, wherein the variable viscosity adhesive is located in a non-photosensitive area of the image sensor wafer. Or according to another embodiment of the present invention, the step A of the packaging method of the image sensor chip comprises: - coating the variable viscosity adhesive on a photosensitive surface of the image sensor wafer; Partially etching the variable viscosity adhesive to remove the viscosity-variable adhesive of the photosensitive region of the image sensor wafer; - bonding the substrate to the image sensor wafer Photosensitive surface. The substrate bonded to the photosensitive surface of the image sensor wafer allows the photosensitive region of the image sensor to be hermetically covered, thereby preventing the photosensitive region from adhering with dust or metal particles during packaging to affect device performance.
根据本发明的又一实施例， 所述图像传感器芯片的封装方法的 所述步骤 A包括： - 在所述基板上涂布所述粘度可变的粘合剂；- 在 分刻蚀所述封装粘合剂； - 将所述基板粘合到所述图像传感器晶圆 的感光面， 其中所述封装粘合剂位于所述图像传感器晶圓的非感光 区域上。 由于封装粘合剂将基板与图像传感器晶圆相对隔离， 从而 使得图像传感器的感光区域不会粘附粘度可变的粘合剂， 进而避免 了后续处理中粘度可变的粘合剂不能够充分移除所带来的感光区域 的沾污。  According to still another embodiment of the present invention, the step A of the packaging method of the image sensor chip comprises: - coating the variable viscosity adhesive on the substrate; - etching the package in a portion An adhesive; - bonding the substrate to a photosensitive surface of the image sensor wafer, wherein the encapsulation adhesive is on a non-photosensitive area of the image sensor wafer. Since the encapsulating adhesive separates the substrate from the image sensor wafer, the photosensitive area of the image sensor does not adhere to the viscosity-variable adhesive, thereby avoiding insufficient viscosity of the adhesive in subsequent processing. Remove the stain from the photosensitive area.
根据本发明的又一实施例， 所述图像传感器芯片的封装方法的 所述步骤 A 包括： - 在所述图像传感器晶圆的感光面上涂布所述封 装粘合剂； - 部分刻蚀所述封装粘合剂； 在所述基板上涂布所述封 装粘合剂。  According to still another embodiment of the present invention, the step A of the packaging method of the image sensor chip comprises: - coating the packaging adhesive on a photosensitive surface of the image sensor wafer; - a partial etching station a packaging adhesive; coating the encapsulating adhesive on the substrate.
优选地， 用于所述图像传感器芯片的封装方法的所述粘度可变 的粘合剂为热熔胶或者紫外光敏胶。 如果所述粘度可变的粘合剂为 热熔胶， 则在所述步骤 D中通过加热所述图像传感器芯片来降低所 述粘度可变的粘合剂的粘性； 如果所述粘度可变的粘合剂为紫外光 敏胶， 那么在所述步骤 D中通过紫外光照射所述图像传感器芯片来 降低所述粘度可变的粘合剂的粘性。 粘度降低后的粘度可变的粘合 剂易于从基地或感光面去除。 Preferably, the viscosity-variable adhesive used in the packaging method of the image sensor chip is a hot melt adhesive or an ultraviolet photosensitive adhesive. If the viscosity-variable adhesive is a hot melt adhesive, reducing the viscosity of the viscosity-variable adhesive by heating the image sensor chip in the step D; if the viscosity is variable The adhesive is an ultraviolet photosensitive adhesive, then the image sensor chip is irradiated by ultraviolet light in the step D The viscosity of the variable viscosity adhesive is reduced. The variable viscosity adhesive after viscosity reduction is easily removed from the base or photosensitive surface.
优选地， 用于所述图像传感器芯片的封装方法的所述封装粘合 剂包括环氧树脂。  Preferably, the encapsulating adhesive for the encapsulation method of the image sensor chip comprises an epoxy resin.
根据本发明的第二方面， 提出了一种摄像模组， 包括图像传感 器以及所述图像传感器感光区域一侧上方的光学镜头， 其中， 所述 图像传感器感光区域与所述光学镜头之间没有固体透光介质。 其优 点在于， 保证了光线从镜头到图像传感器芯片之间没有光的损失和 由于散射引起的图像变差， 由于不需要光学级玻璃， 成本也会相应 地下降。 附图说明  According to a second aspect of the present invention, a camera module is provided, including an image sensor and an optical lens above a side of a photosensitive area of the image sensor, wherein there is no solid between the image sensor photosensitive area and the optical lens Light transmissive medium. This has the advantage of ensuring that there is no loss of light between the lens and the image sensor chip and image degradation due to scattering, and since optical grade glass is not required, the cost is correspondingly reduced. DRAWINGS
图 1 示出了根据传统的封装方法所制造的图像传感器芯片的截 面图；  Figure 1 shows a cross-sectional view of an image sensor chip fabricated in accordance with a conventional packaging method;
图 2示出了根据本发明的封装方法的流程图；  Figure 2 shows a flow chart of a packaging method in accordance with the present invention;
图 3a- 3k 示出了根据本发明的一个实施例的图像传感器芯片的 封装方法的截面示意图；  3a-3k are cross-sectional schematic views showing a method of packaging an image sensor chip in accordance with an embodiment of the present invention;
图 4a-4h 示出了根据本发明的又一个实施例的图像传感器芯片 的封装方法的截面示意图；  4a-4h are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention;
图 5a-5g 示出了根据本发明的又一个实施例的图像传感器芯片 的封装方法的截面示意图；  5a-5g are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention;
图 6a-6g 示出了根椐本发明的又一个实施例的图像传感器芯片 的封装方法的截面示意图；  6a-6g are schematic cross-sectional views showing a packaging method of an image sensor chip according to still another embodiment of the present invention;
图 7示出了根据本发明一个实施例的摄像模组。
Figure imgf000006_0001
Figure 7 illustrates a camera module in accordance with one embodiment of the present invention.
Figure imgf000006_0001
述， 但是应当理解到， 本发明的法律范围由本专利所附的权利要求 的文字来界定。 详细描述应当被解释为仅是示范性的， 并非描述本 发明的每种可能的实施方式， 因为描述每种可能的实施方式， 即使 有可能， 也是不切实际的。 利用当前技术或在本专利申请日之后研 发的技术， 能够实现各种可替换的实施方式， 这仍将落入界定本发 明的权利要求的范围内。 It is to be understood that the scope of the invention is defined by the language of the claims appended hereto. The detailed description should be construed as merely exemplary, not a description Every possible implementation of the invention, as described with every possible implementation, is impractical, if not impossible. </ RTI></RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;</RTI><RTIgt;
图 2示出了根据本发明的封装方法 20的流程图。 参照图 2, 首 先， 在步骤 S201中通过粘度可变的粘合剂将图像传感器晶圆的感光 面与基板相粘合， 其中该粘度可变的粘合剂可以是紫外光敏胶或者 是热熔胶； 随后， 在步骤 S202中将图像传感器的焊盘连接到所述图 像传感器晶圆背面的焊接材料， 诸如锡球， 其中一般常用的连接方 再后， 在步骤 S203中， 将经过了上述步骤 S201和 S202后的图像传 感器晶圆进行切割以获得分离的图像传感器芯片； 最后在步骤 S204 中， 对于切割后的分离的图像传感器芯片进行剥离所述基板的工序， 即改变所述粘度可变的粘合剂的粘性以将所述基板从所述分离的图 像传感器芯片剥离， 其中， 如果所述粘度可变的粘合剂采用的为紫 外光敏胶， 那么则通过紫外光照射所述图像传感器芯片的方式来改 变所述粘度可变的粘合剂的粘性以将所述基板从所述分离的图像传 感器芯片剥离； 如果所述粘度可变的粘合剂采用的为热熔胶， 那么 则通过加热所述图像传感器芯片的方式来改变所述粘度可变的粘合 剂的粘性以将所述基板从所述分离的图像传感器芯片剥离。  Figure 2 shows a flow chart of a packaging method 20 in accordance with the present invention. Referring to FIG. 2, first, in step S201, the photosensitive surface of the image sensor wafer is bonded to the substrate by a variable viscosity adhesive, wherein the variable viscosity adhesive may be ultraviolet photosensitive adhesive or hot melt. a glue; subsequently, in step S202, the pad of the image sensor is connected to the solder material on the back side of the image sensor wafer, such as a solder ball, wherein the commonly used connector is followed by the above steps in step S203. The image sensor wafers after S201 and S202 are cut to obtain a separate image sensor chip; finally, in step S204, the process of peeling off the substrate is performed on the separated image sensor chip after cutting, that is, changing the viscosity The adhesive is detached to peel the substrate from the separated image sensor chip, wherein if the variable viscosity adhesive is an ultraviolet photosensitive adhesive, the image sensor chip is irradiated by ultraviolet light Means to change the viscosity of the variable viscosity adhesive to separate the substrate from the image sensor Sheet peeling; if the variable viscosity adhesive is a hot melt adhesive, then the viscosity of the variable viscosity adhesive is changed by heating the image sensor chip to remove the substrate from The separated image sensor chip is stripped.
优选地，根据图 2的流程图中的本发明的方法，在所述步骤 S201 之后， 还包括以下步骤， 即从所述图像传感器晶圆的背面对所述图 像传感器晶圆进行减薄。 通过减薄的步骤， 可以把图像传感器晶圓 尽可能地薄化到其最小能接受的厚度， 从而满足半导体器件的小型 化和高集成化的要求。  Preferably, according to the method of the present invention in the flow chart of Fig. 2, after the step S201, the method further includes the step of thinning the image sensor wafer from the back side of the image sensor wafer. Through the thinning step, the image sensor wafer can be thinned as much as possible to its minimum acceptable thickness, thereby meeting the requirements for miniaturization and high integration of semiconductor devices.
下面根据本发明的具体实施例对根据本发明的图像传感器芯片 的封装方法进行具体描述。  DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a packaging method of an image sensor chip according to the present invention will be specifically described in accordance with a specific embodiment of the present invention.
图 3a-3k 示出了根据本发明的一个实施例的图像传感器芯片的 封装方法的截面示意图。 在图 3a-3k所示出的方法的实施例中，提供图像传感器晶圓 310, 该图像传感器晶圓 310 中形成有多个图像传感器， 该多个图像传感 器之间还形成有切割道， 以隔离不同的图像传感器。 每个图像传感 器具有用于感光的感光区域， 其共同地分布在图像传感器晶圆 310 的一侧， 即感光面 306。 通常地， 对于每个图像传感器， 其还包括信 号处理电路区， 该信号处理电路区分布在每个图像传感器感光区域 的***， 并邻近切割道， 其中该切割道、 信号处理电路区以及感光 面 306 的其他不用于感光的区域共同构成了非感光区域。 在实际应 用中， 图像传感器感光面 306 上还形成有介质层以及位于其中的互 连层 （图中未示出） ， 以将该图像传感器中形成的电路元件引出， 其中， 该互连层还包括焊盘 307。 3a-3k show cross-sectional schematic views of a method of packaging an image sensor chip in accordance with one embodiment of the present invention. In the embodiment of the method illustrated in FIGS. 3a-3k, an image sensor wafer 310 is provided. The image sensor wafer 310 is formed with a plurality of image sensors, and a plurality of image sensors are further formed with a scribe line therebetween. Isolate different image sensors. Each of the image sensors has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 310, that is, the photosensitive surface 306. Generally, for each image sensor, it further includes a signal processing circuit region distributed around the periphery of each image sensor photosensitive region and adjacent to the dicing street, wherein the dicing channel, the signal processing circuit region, and the photosensitive surface Other areas of 306 that are not used for sensitization together constitute a non-photosensitive area. In practical applications, the image sensor photosensitive surface 306 is further formed with a dielectric layer and an interconnect layer (not shown) disposed therein to extract circuit elements formed in the image sensor, wherein the interconnect layer further Includes pad 307.
然后， 提供基板 301 , 该基板 301例如为玻璃板、 不锈钢板等刚 性基板， 或者为蓝膜等柔性基板， 或者为柔性基板与刚性基板的组 合。 谅基板 301应当覆盖图像传感器晶圓 310 中的图像传感器以避 免在封装， 测试， 运输等过程中灰尘、 金属颗粒等接触并粘附到图 像传感器的感光区域， 从而影响该图像传感器的感光效果及可靠性。  Then, a substrate 301 is provided, which is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate. The substrate 301 should cover the image sensor in the image sensor wafer 310 to prevent dust, metal particles, etc. from contacting and adhering to the photosensitive area of the image sensor during packaging, testing, transportation, etc., thereby affecting the photographic effect of the image sensor and reliability.
根据本实施例的方法步骤， 首先， 在基板 301 例如玻璃上涂布 粘度可变的粘合剂 309, 例如紫外光敏胶或者热熔胶。 对于该粘度可 变的粘合剂 309， 其具有经过处理后粘度发生改变的特性。基于读特 性， 由粘度可变的粘合剂 309粘合的两个面易于通过该处理来分离。 例如， 对于热熔胶， 其具有受热后粘度显著降低的特性。 而紫外光 敏胶则具有受紫外光照射后粘度降低的特性。 可以理解， 在本实施 例中以热熔胶或紫外光敏胶示意地说明了粘度可变的粘合剂， 但在 实际应用中， 该粘度可变的粘合剂并不限于此。 图 3a示出了涂布了 紫外光敏胶或者热熔胶后的基板 301 以及完成了封装前工艺的图像 传感器晶圆 310,涂布的该粘度可变的粘合剂 309的厚度为 2微米至 10(H 米。优选地， 可以通过旋涂方式或喷涂方式涂布谅粘度可变的 粘合剂 309，以使得所涂布的粘度可变的粘合剂 309具有较好的均匀 性。 随后， 对所涂布的所述粘度可变的粘合剂 309 进行部分刻蚀， 使之只保留对应于图像传感器晶圓 310的各个传感器之间处的部分， 即非感光区域， 而图像传感器感光区域的粘度可变的粘合剂 309被 移除， 如图 3b所示。 在一些其他的例子中， 粘度可变的粘合剂 309 也可以直接通过丝网印刷的方式涂布在图像传感器晶圆 310上， 并 成形为覆盖图像传感器晶圆 310部分区域的图形。 According to the method steps of the present embodiment, first, a viscosity-variable adhesive 309 such as an ultraviolet photosensitive adhesive or a hot melt adhesive is applied onto a substrate 301 such as glass. For the viscosity-variable adhesive 309, it has a characteristic that the viscosity changes after being treated. Based on the read characteristics, the two faces bonded by the viscosity-variable adhesive 309 are easily separated by this treatment. For example, for a hot melt adhesive, it has a characteristic that the viscosity is remarkably lowered after being heated. Ultraviolet photosensitive adhesives have the property of lowering the viscosity after being irradiated with ultraviolet light. It is to be understood that the variable viscosity adhesive is schematically illustrated in the present embodiment by a hot melt adhesive or an ultraviolet photosensitive adhesive, but in practical use, the variable viscosity adhesive is not limited thereto. Figure 3a shows a substrate 301 coated with UV-sensitive or hot-melt adhesive and an image sensor wafer 310 finished with a pre-package process, the viscosity-variable adhesive 309 being coated having a thickness of 2 μm to 10 (H m. Preferably, the viscosity-variable adhesive 309 can be applied by spin coating or spray coating so that the viscosity-variable adhesive 309 applied has better uniformity. Subsequently, the coated viscosity-variable adhesive 309 is partially etched so as to retain only the portion between the respective sensors corresponding to the image sensor wafer 310, that is, the non-photosensitive area, and the image sensor The viscosity-variable adhesive 309 of the photosensitive region is removed, as shown in Figure 3b. In some other examples, the viscosity-variable adhesive 309 can also be applied directly to the image sensor wafer 310 by screen printing and shaped to cover a portion of the image sensor wafer 310.
随后， 将基板 301粘合到图像传感器晶圆 310的感光面 306 , 如 图 3c所示。  Subsequently, the substrate 301 is bonded to the photosensitive surface 306 of the image sensor wafer 310 as shown in Figure 3c.
随后， 可选择地， 可以对所述图像传感器晶圓 310的感光面 306 相对的背面进行减薄， 例如通过背面磨削工艺将该图像传感器晶圆 310减薄到 200微米以下。 然后， 对图像传感器晶圆 310背面的部分 区域进行刻蚀直至露出互连层， 以在其背面形成凹槽 311。 通常地， 所刻蚀的区域为图像传感器晶圓 310 中的各个图像传感器的中间连 接部分， 即切割道区域， 以将其中的焊盘 307露出， 其中， 切割面 通常略微倾斜， 如图 3d所示出。  Subsequently, the opposite side of the photosensitive surface 306 of the image sensor wafer 310 may alternatively be thinned, such as by a back grinding process to reduce the image sensor wafer 310 to less than 200 microns. Then, a portion of the back surface of the image sensor wafer 310 is etched until the interconnect layer is exposed to form a recess 311 on the back side thereof. Generally, the etched area is the intermediate connection portion of each image sensor in the image sensor wafer 310, that is, the scribe line area, to expose the pad 307 therein, wherein the cut surface is usually slightly inclined, as shown in FIG. 3d. show.
然后， 在图 3c中刻蚀后的图像传感器晶圓 310的背面沉积金属 材料以形成金属层 312,所述金属层 312亦会覆盖四槽 31 1的侧壁与 底部， 如图 3e所示。 随后， 部分刻蚀该金属层 312以形成多根导电 引线 304, 如图 3f所示出。 该导电引线 304分别地将图像传感器的 各个焊盘 307引出至图像传感器晶圓 310背面的预定区域， 该预定 区域用于作为设置焊点的焊点区域。  Then, a metal material is deposited on the back side of the etched image sensor wafer 310 in Fig. 3c to form a metal layer 312 which also covers the sidewalls and bottom of the four trenches 31 1 as shown in Fig. 3e. Subsequently, the metal layer 312 is partially etched to form a plurality of conductive leads 304, as shown in Figure 3f. The conductive leads 304 respectively lead the respective pads 307 of the image sensor to a predetermined area on the back side of the image sensor wafer 310, the predetermined area being used as a solder joint area for the solder joints.
随后， 在该焊点区域形成焊接材料 303， 例如锡球， 如图 3g所 示。  Subsequently, a solder material 303, such as a solder ball, is formed in the solder joint region, as shown in Fig. 3g.
再后， 将经过了上述步骤后的图像传感器晶圆 310 进行切割以 获得分离的图像传感器芯片， 如图 3h所示。  Thereafter, the image sensor wafer 310 after the above steps is cut to obtain a separate image sensor chip, as shown in Fig. 3h.
最后， 从各个分离的图像传感器芯片剥离基板 301 , 即改变粘度 可变的粘合剂 309的粘性以将基板 301从分离的图像传感器芯片剥 离， 其中， 如果粘度可变的粘合剂 309 采用的为紫外光敏胶， 那么 则通过紫外光照射所述图像传感器芯片的方式来降低粘合剂 309 的 粘性以将基板 301 从分离的图像传感器芯片剥离； 如果粘合剂 309 采用的为热熔胶， 那么则通过加热图像传感器芯片的方式来降低粘 合剂 309的粘性以将基板 301从分离的图像传感器芯片剥离， 具体 地来说就是， 采用上述两种方式中任意一种改变粘度可变的粘合剂 309的粘度， 使之处于可去除状态， 随后固定图像传感器芯片， 对基 板施加一个使之脱离的力， 诸如施加在其背部的吸附力 （真空或者 静电） ， 使之分开， 分开后粘度可变的粘合剂 309位于基板 301 — 侧。 其中， 如图 3h所示出的分离的图像传感器芯片在剥离所述基板 之后得到图形传感器芯片如图 3i所示。 在实际应用中， 对于热熔胶 而言， 其粘度改变的转变温度通常不会超过 260度， 但是需要一定 时间 （ 10分钟后） 粘度变化才会比较大， 而在此温度范围内对图像 传感器芯片进行热处理， 例如回流焊， 到达 260度的时间很短， 通 常只有十几秒， 因而并不会影响其上形成的器件封装结构 （例如， 导电引线 304 )。 而对于紫外光敏胶， 该基板 301通常由具有紫外光 可透过特性的材料构成， 例如光学玻璃， 因而易于通过紫外光照射 读基板 301 来使得该紫外光敏胶被透过的紫外光照射， 从而使得其 粘度降低。 Finally, the substrate 301 is peeled off from each of the separated image sensor chips, that is, the viscosity of the viscosity-variable adhesive 309 is changed to peel the substrate 301 from the separated image sensor chip, wherein if the viscosity-variable adhesive 309 is used Is a UV-sensitive adhesive, then the image sensor chip is irradiated by ultraviolet light to reduce the adhesive 309 Sticky to peel the substrate 301 from the separated image sensor chip; if the adhesive 309 is a hot melt adhesive, the viscosity of the adhesive 309 is lowered by heating the image sensor chip to separate the substrate 301 from the image. The sensor chip is stripped, specifically, the viscosity of the viscosity-variable adhesive 309 is changed in any of the above two manners to be in a removable state, and then the image sensor chip is fixed, and a substrate is applied thereto. The force of the detachment, such as the adsorption force (vacuum or static electricity) applied to the back thereof, is separated, and the adhesive 309 having a variable viscosity after separation is located on the side of the substrate 301. Wherein, the separated image sensor chip as shown in FIG. 3h obtains the pattern sensor chip after peeling off the substrate as shown in FIG. 3i. In practical applications, for hot melt adhesives, the viscosity change transition temperature usually does not exceed 260 degrees, but it takes a certain time (after 10 minutes) that the viscosity change will be relatively large, and the image sensor is in this temperature range. The chip is heat treated, such as reflow soldering, to a very short time of 260 degrees, typically only a few ten seconds, and thus does not affect the device package structure formed thereon (eg, conductive leads 304). For the ultraviolet photosensitive adhesive, the substrate 301 is usually made of a material having ultraviolet light permeable characteristics, such as optical glass, so that it is easy to irradiate the reading substrate 301 by ultraviolet light to cause the ultraviolet photosensitive adhesive to be irradiated with ultraviolet light. This reduces the viscosity.
在剥离所述基板之后得到图形传感器芯片之后， 应将读图形传 感器芯片立即通过支架 313与镜头 314安装在一起， 以避免空气中 的灰尘粘附到图像传感器的感光面上， 如图 3j 所示， 并随后与电路 板集成在一起， 如图 3k示出了与镜头安装在一起并与电路板 315集 成在一起的示意图。  After the pattern sensor chip is obtained after peeling off the substrate, the read pattern sensor chip should be immediately mounted to the lens 314 through the bracket 313 to prevent dust in the air from adhering to the photosensitive surface of the image sensor, as shown in Fig. 3j. And then integrated with the board, as shown in Figure 3k, which is shown mounted with the lens and integrated with the board 315.
图 4a-4h 示出了根据本发明的又一个实施例的图像传感器芯片 的封装方法的截面示意图。在谅实施例中，提供图像传感器晶圆 410 , 该图像传感器晶圓 410 中形成有多个图像传感器， 该多个图像传感 器之间还形成有切割道， 以隔离不同的图像传感器。 每个图像传感 器具有用于感光的感光区域， 其共同地分布在图像传感器晶圓 410 的一侧， 即感光面 406。  4a-4h are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention. In an embodiment, an image sensor wafer 410 is provided having a plurality of image sensors formed therein, and dicing tracks are formed between the plurality of image sensors to isolate different image sensors. Each image sensor has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 410, i.e., the photosensitive surface 406.
根据本实施例的方法步骤， 首先， 在图像传感器晶圆 410 的感 光面 406上涂布所述粘度可变的粘合剂 409 ,例如紫外光敏胶或者热 熔胶， 图 4a示出了涂布了紫外光敏胶或者热熔胶后的图像传感器晶 圓 410 以及基板 401,, 涂布的该粘度可变的粘合剂 409的厚度为 2 微米至 100微米。 优选地， 可以通过旋涂方式或喷涂方式涂布该粘 度可变的粘合剂 409,以使得所涂布的粘度可变的粘合剂 409具有较 好的均匀性。 According to the method steps of the present embodiment, first, the sense of the image sensor wafer 410 The variable viscosity adhesive 409, such as ultraviolet photosensitive adhesive or hot melt adhesive, is coated on the glossy surface 406, and FIG. 4a shows the image sensor wafer 410 and the substrate coated with the ultraviolet photosensitive adhesive or the hot melt adhesive. 401, The viscosity-variable adhesive 409 is applied to a thickness of from 2 micrometers to 100 micrometers. Preferably, the viscosity-variable adhesive 409 can be applied by spin coating or spray coating to provide better uniformity of the coated viscosity-variable adhesive 409.
随后， 对所涂布的所述粘度可变的粘合剂 409 进行部分刻蚀， 使之只保留对应于图像传感器晶圆 410的各个传感器之间处的部分， 即非感光区域， 如图 4b所示。 在一些其他的例子中， 粘度可变的粘 合剂 409 也可以直接通过丝网印刷的方式涂布在图像传感器晶圓 410上， 并成形为覆盖图像传感器晶圓 410部分区域的图形。  Subsequently, the coated viscosity-variable adhesive 409 is partially etched so as to retain only the portion between the respective sensors corresponding to the image sensor wafer 410, that is, the non-photosensitive area, as shown in FIG. 4b. Shown. In some other examples, the viscosity-variable adhesive 409 can also be applied directly to the image sensor wafer 410 by screen printing and shaped to cover a portion of the image sensor wafer 410.
随后， 将基板 401粘合到图像传感器晶圆 410的感光面 406 , 如 图 4c所示。 该基板 401例如为玻璃板、 不锈钢板等刚性基板， 或者 为蓝膜等柔性基板， 或者为柔性基板与刚性基板的組合。 读基板 401 应当覆盖图像传感器晶圆 410中的图像传感器以避免在封装， 测试， 运输等过程中灰尘、 金属颗粒等接触并粘附到图像传感器的感光区 域， 从而影响该图像传感器的感光效果及可靠性。  Subsequently, the substrate 401 is bonded to the photosensitive surface 406 of the image sensor wafer 410 as shown in Fig. 4c. The substrate 401 is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate. The read substrate 401 should cover the image sensor in the image sensor wafer 410 to prevent dust, metal particles, etc. from contacting and adhering to the photosensitive area of the image sensor during packaging, testing, transportation, etc., thereby affecting the photographic effect of the image sensor and reliability.
随后， 可选择地， 可以对所述图像传感器晶圓 410 的感光面相 对的背面进行减薄，例如通过背面磨削工艺将该图像传感器晶圆 410 减薄到 200微米以下。 然后， 通过通孔的方式将图像传感器的焊盘 连接到所述图像传感器晶圆背面的焊接材料 403 , 具体来说， 就是从 所述图像传感器晶圓背面通过蚀刻产生通孔， 如图 4d所示。 然后在 通孔中填充金属材料 408 , 例如铜， 经由该金属材料 408使多个焊盘 407分别地连接到图像传感器晶圓 410背面的焊点区域， 如图 4e所 示。 接着， 在谅焊点区域形成焊接材料 403， 例如锡球， 从而使得焊 盘 407被电连接到焊接材料 403 , 如图 4f所示。  Subsequently, optionally, the opposite side of the photosensitive surface of the image sensor wafer 410 may be thinned, such as by a back grinding process to reduce the image sensor wafer 410 to less than 200 microns. Then, the pad of the image sensor is connected to the solder material 403 on the back surface of the image sensor wafer by means of a via hole, specifically, a via hole is formed by etching from the back surface of the image sensor wafer, as shown in FIG. 4d. Show. A metal material 408, such as copper, is then filled in the via, via which a plurality of pads 407 are respectively connected to the pad regions on the back side of the image sensor wafer 410, as shown in Figure 4e. Next, a solder material 403, such as a solder ball, is formed in the region of the solder joint so that the solder pad 407 is electrically connected to the solder material 403 as shown in Fig. 4f.
再后， 将经过了上述步骤后的图像传感器晶圓 410进行切割以 获得分离的图像传感器芯片， 如图 4g所示。  Thereafter, the image sensor wafer 410 after the above steps is cut to obtain a separate image sensor chip, as shown in Fig. 4g.
最后， 从各个分离的图像传感器芯片上剥离所述基板， 即改变 所述粘度可变的粘合剂的粘性以将所述基板从所述分离的图像传感 器芯片剥离， 其中， 如果所述粘度可变的粘合剂采用的为紫外光敏 胶， 那么则通过紫外光照射所述图像传感器芯片的方式来改变所述 粘度可变的粘合剂的粘性以将所述基板从所述分离的图像传感器芯 片剥离； 如果所述粘度可变的粘合剂采用的为热熔胶， 那么则通过 加热所述图像传感器芯片的方式来改变所述粘度可变的粘合剂的粘 性以将所述基板从所述分离的图像传感器芯片剥离， 其中， 如图 4f 所示出的分离的图像传感器芯片在剥离所述基板之后得到图形传感 器芯片如图 4h所示。 Finally, the substrate is peeled off from each of the separate image sensor chips, ie, changed The viscosity of the variable viscosity adhesive strips the substrate from the separated image sensor chip, wherein if the variable viscosity adhesive is an ultraviolet photosensitive adhesive, then ultraviolet light is passed through Irradiating the image sensor chip to change the viscosity of the viscosity-variable adhesive to peel the substrate from the separate image sensor chip; if the viscosity-variable adhesive is heated a glue, then changing the viscosity of the viscosity-variable adhesive by heating the image sensor chip to peel the substrate from the separate image sensor chip, wherein, as shown in FIG. 4f The separate image sensor chip is obtained after stripping the substrate as shown in Figure 4h.
图 5a-5g 示出了根据本发明的又一个实施例的图像传感器芯片 的封装方法的截面示意图。在该实施例中，提供图像传感器晶圆 510, 读图像传感器晶圓 510 中形成有多个图像传感器， 该多个图像传感 器之间还形成有切割道， 以隔离不同的图像传感器。 每个图像传感 器具有用于感光的感光区域， 其共同地分布在图像传感器晶圓 510 的一侧， 即感光面 506。  5a-5g are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention. In this embodiment, an image sensor wafer 510 is provided. A plurality of image sensors are formed in the read image sensor wafer 510, and dicing tracks are formed between the plurality of image sensors to isolate different image sensors. Each of the image sensors has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 510, i.e., the photosensitive surface 506.
首先， 在所述基板 501上涂布所述粘度可变的粘合剂 509 , 例如 紫外光敏胶或者热熔胶， 图 5a示出了涂布了紫外光敏胶或者热熔胶 后的基板 501 以及完成了封装前工艺的图像传感器晶圆 510,, 涂布 的谅粘度可变的粘合剂 509的厚度为 2微米至 100微米。 优选地， 所涂布的粘度可变的粘合剂 509具有较好的均匀性。  First, the variable viscosity adhesive 509, such as an ultraviolet photosensitive adhesive or a hot melt adhesive, is coated on the substrate 501, and FIG. 5a shows the substrate 501 coated with the ultraviolet photosensitive adhesive or the hot melt adhesive, and The image sensor wafer 510 of the pre-package process is completed, and the coated viscosity-variable adhesive 509 has a thickness of 2 micrometers to 100 micrometers. Preferably, the coated viscosity-variable adhesive 509 has better uniformity.
随后， 在所述涂布了粘度可变的粘合剂 509后的基板上涂布封 装粘合剂 520, 该封装粘合剂可以是包括环氧树脂的 AB 胶， 如图 5b所示。  Subsequently, a package adhesive 520 is applied to the substrate after the viscosity-variable adhesive 509 is applied, and the package adhesive may be an AB paste including an epoxy resin, as shown in Fig. 5b.
随后， 部分刻蚀封装粘合剂 520, 使之只保留对应于图像传感器 晶圆的各个传感器之间处的部分 521。 在刻蚀封装粘合剂 520 的同 时， 对应位置的粘度可变的粘合剂 509亦会部分或完全地被刻蚀掉， 如图 5c所示。 在一些其他的例子中， 封装粘合剂 520也可以直接通 过丝网印刷的方式涂布在涂布了粘度可变粘合剂 509 的图像传感器 晶圆 510上，并成形为覆盖图像传感器晶圆 510部分区域的图形 521。 随后， 将基板 501粘合到图像传感器晶圆 510的感光面 506， 其 中经过部分蚀刻而保留下来的封装粘合剂 520的部分 521对应于所 述图像传感器晶圆 510的非感光区域上， 如图 5d所示。 该基板 501 例如为玻璃板、 不锈钢板等刚性基板， 或者为蓝膜等柔性基板， 或 者为柔性基板与刚性基板的组合。该基板 501与图像传感器晶圆 510 的感光面 506粘合之后应当覆盖图像传感器晶圆 510中的图像传感 器以避免在封装， 测试， 运输等过程中灰尘、 金属颗粒等接触并粘 附到图像传感器的感光区域， 从而影响该图像传感器的感光效果及 可靠性。 此外， 由于封装粘合剂 520将基板 501 与图像传感器晶圆 510相对隔离，从而使得图像传感器的感光区域不会粘附粘度可变的 粘合剂， 进而避免了在后续处理中粘度可变的粘合剂不能够充分移 除所带来的感光区域的沾污。 Subsequently, the encapsulation adhesive 520 is partially etched such that only portions 521 between the respective sensors corresponding to the image sensor wafer are retained. At the same time as the encapsulating adhesive 520 is etched, the viscosity-variable adhesive 509 at the corresponding position is also partially or completely etched away, as shown in Figure 5c. In some other examples, the encapsulating adhesive 520 can also be applied directly to the image sensor coated with the viscosity variable adhesive 509 by screen printing. Wafer 510 is formed and patterned into a pattern 521 that covers a portion of image sensor wafer 510. Subsequently, the substrate 501 is bonded to the photosensitive surface 506 of the image sensor wafer 510, wherein the portion 521 of the package adhesive 520 that has been partially etched remains corresponding to the non-photosensitive area of the image sensor wafer 510, such as Figure 5d is shown. The substrate 501 is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate. After the substrate 501 is bonded to the photosensitive surface 506 of the image sensor wafer 510, the image sensor in the image sensor wafer 510 should be covered to prevent dust, metal particles, etc. from contacting and adhering to the image sensor during packaging, testing, transportation, and the like. The photosensitive area affects the photographic effect and reliability of the image sensor. In addition, since the package adhesive 520 isolates the substrate 501 from the image sensor wafer 510, the photosensitive area of the image sensor does not adhere to the viscosity-variable adhesive, thereby avoiding viscosity change in subsequent processing. The adhesive is not able to sufficiently remove the staining of the photosensitive area caused by the adhesive.
随后， 可选择地， 可以对所述图像传感器晶圆 510 的感光面相 对的背面进行减薄，例如通过背面磨削工艺将该图像传感器晶圓 510 减薄到 200微米以下。 然后， 通过通孔的方式将图像传感器的焊盘 连接到所述图像传感器晶圆 510背面的焊接材料 503， 具体来说， 就 是从所述图像传感器晶圓 510 背面通过蚀刻产生通孔， 然后在通孔 中填充金属材料 508 , 例如铜， 经由该金属材料 508使多个焊盘 507 分别地引出至图像传感器晶圆 510 背面的焊点区域。 接着， 在该焊 点区域形成焊接材料 503， 例如锡球， 以使得焊盘 507与谅焊接材料 503电连接， 如图 5e所示。  Subsequently, the opposite side of the photosensitive surface of the image sensor wafer 510 may alternatively be thinned, such as by a back grinding process to reduce the image sensor wafer 510 to less than 200 microns. Then, the pad of the image sensor is connected to the solder material 503 on the back surface of the image sensor wafer 510 by means of via holes, specifically, the via hole is formed by etching from the back side of the image sensor wafer 510, and then The via holes are filled with a metal material 508, such as copper, through which the plurality of pads 507 are respectively led out to the pad regions on the back side of the image sensor wafer 510. Next, a solder material 503, such as a solder ball, is formed in the solder joint region to electrically connect the pad 507 to the solder material 503 as shown in Fig. 5e.
再后， 将经过了上述步骤后的图像传感器晶圆 510 进行切割以 获得分离的图像传感器芯片， 如图 5f所示。  Thereafter, the image sensor wafer 510 after the above steps is cut to obtain a separate image sensor chip, as shown in Fig. 5f.
最后， 对于各个分离的图像传感器芯片进行剥离所述基板的工 的图像传感器芯片^ , 其中， 如果所述粘度可变^粘合剂采用^ 为紫外光敏胶， 那么则通过紫外光照射所述图像传感器芯片的方式 像传感器芯片剥离； 如果所述粘度可变的粘合剂采用的为热熔胶， 那么则通过加热所述图像传感器芯片的方式来改变所述粘度可变的 粘合剂的粘性以将所述基板从所述分离的图像传感器芯片剥离， 其 中， 如图 5f所示出的分离的图像传感器芯片在剥离所述基板之后得 到图形传感器芯片如图 5g所示。 Finally, for each of the separated image sensor chips, an image sensor chip for peeling off the substrate is performed, wherein if the viscosity variable adhesive is an ultraviolet photosensitive adhesive, the image is irradiated by ultraviolet light. Sensor chip approach Like the sensor chip stripping; if the variable viscosity adhesive is a hot melt adhesive, then the viscosity of the variable viscosity adhesive is changed by heating the image sensor chip to The substrate is peeled off from the separated image sensor chip, wherein the separated image sensor chip as shown in Fig. 5f is obtained after peeling off the substrate as shown in Fig. 5g.
图 6a-6g 示出了根据本发明的又一个实施例的图像传感器芯片 的封装方法的截面示意图。在谅实施例中，提供图像传感器晶圓 610 , 谅图像传感器晶圆 610 中形成有多个图像传感器， 该多个图像传感 器之间还形成有切割道， 以隔离不同的图像传感器。 每个图像传感 器具有用于感光的感光区域， 其共同地分布在图像传感器晶圓 610 的一侧， 即感光面 606。  6a-6g are schematic cross-sectional views showing a method of packaging an image sensor chip in accordance with still another embodiment of the present invention. In an embodiment, an image sensor wafer 610 is provided. A plurality of image sensors are formed in the image sensor wafer 610, and dicing tracks are formed between the plurality of image sensors to isolate different image sensors. Each of the image sensors has a photosensitive area for light sensing that is commonly distributed on one side of the image sensor wafer 610, i.e., the photosensitive surface 606.
首先， 在图像传感器晶圆 610的感光面 606上涂布所述封装粘 合剂 620, 该封装粘合剂可以是包括环氧树脂的 AB胶， 如图 6a所 随后， 部分刻蚀封装粘合剂 620， 使之只保留对应于图像传感器 晶圓的各个传感器之间处的部分 621 ,其中经过部分蚀刻而保留下来 的封装粘合剂 620的部分 621对应于所述图像传感器晶圓的非感光 区域上， 如图 6b所示。 在一些其他的例子中， 封装粘合剂 620也可 以直接通过丝网印刷的方式涂布在图像传感器晶圆 610上， 并成形 为覆盖图像传感器晶圆 610部分区域的图形 621。  First, the package adhesive 620 is coated on the photosensitive surface 606 of the image sensor wafer 610. The package adhesive may be an AB paste including epoxy resin, as shown in FIG. 6a, partially etched and encapsulated. The agent 620 is retained only at a portion 621 between the respective sensors corresponding to the image sensor wafer, wherein the portion 621 of the package adhesive 620 that has been partially etched remains corresponding to the non-photosensitive of the image sensor wafer In the area, as shown in Figure 6b. In some other examples, the encapsulation adhesive 620 can also be applied directly to the image sensor wafer 610 by screen printing and formed into a pattern 621 that covers a portion of the image sensor wafer 610.
随后， 在所述基板 601上涂布所述粘度可变的粘合剂 609, 例如 紫外光敏胶或者热熔胶， 图 6c示出了涂布了紫外光敏胶或者热熔胶 后的图像传感器晶圆 610以及基板 601 ,涂布的该粘度可变的粘合剂 609的厚度为 2微米至 100微米。优选地， 可以通过旋涂方式或喷涂 方式涂布该粘度可变的粘合剂 609，以使得所涂布的粘度可变的粘合 剂 609具有较好的均匀性。  Subsequently, the variable viscosity adhesive 609, such as ultraviolet photosensitive adhesive or hot melt adhesive, is coated on the substrate 601, and FIG. 6c shows the image sensor crystal coated with the ultraviolet photosensitive adhesive or the hot melt adhesive. The circle 610 and the substrate 601 are coated with the variable viscosity adhesive 609 to a thickness of from 2 micrometers to 100 micrometers. Preferably, the viscosity-variable adhesive 609 can be applied by spin coating or spray coating to provide better uniformity of the coated viscosity-variable adhesive 609.
随后， 将 601基板粘合到图像传感器晶圆 610的感光面 606, 如 图 6d所示。 该基板 601例如为玻璃板、 不锈钢板等刚性基板， 或者 为蓝膜等柔性基板， 或者为柔性基板与刚性基板的组合。 该基板 601 与图像传感器晶圆 610的感光面 606粘合之后应当覆盖图像传感器 晶圆 610中的图像传感器以避免在封装， 测试， 运输等过程中灰尘、 金属颗粒等接触并粘附到图像传感器的感光区域， 从而影响该图像 传感器的感光效果及可靠性。 Subsequently, the 601 substrate is bonded to the photosensitive surface 606 of the image sensor wafer 610 as shown in Figure 6d. The substrate 601 is, for example, a rigid substrate such as a glass plate or a stainless steel plate, or a flexible substrate such as a blue film, or a combination of a flexible substrate and a rigid substrate. The substrate 601 After bonding with the photosensitive surface 606 of the image sensor wafer 610, the image sensor in the image sensor wafer 610 should be covered to prevent dust, metal particles, etc. from contacting and adhering to the photosensitive area of the image sensor during packaging, testing, transportation, and the like. , thereby affecting the photographic effect and reliability of the image sensor.
随后， 可选择地， 可以对所述图像传感器晶圆 610 的感光面相 对的背面进行减薄，例如通过背面磨削工艺将谅图像传感器晶圆 610 减薄到 200微米以下。 然后， 通过通孔的方式将图像传感器的焊盘 连接到所述图像传感器晶圆背面的焊接材料 603 , 具体来说， 就是从 所述图像传感器晶圆背面通过蚀刻产生通孔， 然后在通孔中填充金 属材料 608， 例如铜， 经由该金属材料 608使多个焊盘 607分别地引 出至图像传感器晶圓 610 背面的焊点区域， 接着， 在该焊点区域形 成焊接材料 603， 例如锡球， 从而使得焊盘 607与焊点材料 603电连 接， 如图 6e所示。  Subsequently, optionally, the opposite side of the photosensitive surface of the image sensor wafer 610 may be thinned, such as by a back grinding process to thin the image sensor wafer 610 to less than 200 microns. Then, the pad of the image sensor is connected to the solder material 603 on the back surface of the image sensor wafer by means of a via hole, specifically, a through hole is formed by etching from the back side of the image sensor wafer, and then in the through hole The middle filling metal material 608, such as copper, leads a plurality of pads 607 to the solder joint area on the back surface of the image sensor wafer 610 via the metal material 608, and then forms a solder material 603, such as a solder ball, in the solder joint area. Thus, the pad 607 is electrically connected to the pad material 603 as shown in FIG. 6e.
再后， 将经过了上述步骤后的图像传感器晶圓 610 进行切割以 获得分离的图像传感器芯片， 如图 6f所示。  Thereafter, the image sensor wafer 610 after the above steps is cut to obtain a separate image sensor chip, as shown in Fig. 6f.
最后， 从各个分离的图像传感器芯片剥离所述基板， 即改变所 述粘度可变的粘合剂的粘性以将所述基板从所述分离的图像传感器 芯片剥离， 其中， 如果所述粘度可变的粘合剂采用的为紫外光敏胶， 那么则通过紫外光照射所述图像传感器芯片的方式来改变所述粘度 可变的粘合剂的粘性以将所述基板从所述分离的图像传感器芯片剥 离； 如杲所述粘度可变的粘合剂采用的为热熔胶， 那么则通过加热 所述图像传感器芯片的方式来改变所述粘度可变的粘合剂的粘性以 将所述基板从所述分离的图像传感器芯片剥离， 其中， 如图 6f所示 出的分离的图像传感器芯片在剥离所述基板之后得到图形传感器芯 片如图 6g所示。  Finally, the substrate is peeled off from each of the separated image sensor chips, that is, the viscosity of the variable viscosity adhesive is changed to peel the substrate from the separated image sensor chip, wherein if the viscosity is variable The adhesive is an ultraviolet photosensitive adhesive, and then the viscosity of the variable viscosity adhesive is changed by ultraviolet light to irradiate the image sensor chip to remove the substrate from the separated image sensor chip. Stripping; if the variable viscosity adhesive is a hot melt adhesive, then the viscosity of the variable viscosity adhesive is changed by heating the image sensor chip to remove the substrate from the substrate The separate image sensor chip is stripped, wherein a separate image sensor chip as shown in Figure 6f is obtained after stripping the substrate as shown in Figure 6g.
图 7 示出了根据本发明一个实施例的摄像模组。 该摄像模组可 以采用前述实施例中的封装方法形成。 谅摄像模组包括： 图像传感 器 701 以及所述图像传感器 701感光区域 702—侧上方的光学镜头 706。该光学镜头 706通过支架 703连接到图像传感器 701上。其中， i玄图像传感器 701感光区域 702相对的另一侧具有多个焊点 704，该 焊点 704使得图像传感器 701 的烊盘 705引出。 根据具体应用的不 同， 可以采用侧面引线或通孔来电连接该焊盘 705与焊点 704。 特别 地， 图像传感器 701感光区域 702与光学镜头 706之间没有玻璃， 从而保证了光线从光学镜头 706到图像传感器 701之间没有光的损 失和由于散射引起的图像变差， 从而提高了图像传感器的灵敏度与 成像质量。 此外， 还有效降低了制作成本。 Figure 7 illustrates a camera module in accordance with one embodiment of the present invention. The camera module can be formed by the packaging method in the foregoing embodiment. The camera module includes: an image sensor 701 and an optical lens 706 on the side of the photosensitive area 702 of the image sensor 701. The optical lens 706 is connected to the image sensor 701 via a bracket 703. among them, The opposite side of the photosensitive area 702 of the i-pixel image sensor 701 has a plurality of solder joints 704 that cause the disk 705 of the image sensor 701 to be taken out. The pad 705 and the solder joint 704 can be electrically connected by side leads or vias depending on the particular application. In particular, there is no glass between the photosensitive area 702 of the image sensor 701 and the optical lens 706, thereby ensuring that there is no loss of light between the optical lens 706 and the image sensor 701 and image degradation due to scattering, thereby improving the image sensor. Sensitivity and imaging quality. In addition, it also effectively reduces production costs.
尽管在附图和前述的描述中详细阐明和描述了本发明， 应认为 该阐明和描述是说明性的和示例性的， 而不是限制性的； 本发明不 限于所上述实施方式。  While the invention has been illustrated and described with reference to the embodiments the embodiments
那些本技术领域的一般技术人员可以通过研究说明书、 公开的 内容及附图和所附的权利要求书， 理解和实施对披露的实施方式的 其他改变。 在权利要求中， 措词 "包括" 不排除其他的元素和步骤， 并且措辞 "一" 、 "一个" 不排除复数。 在发明的实际应用中， 一 个零件可能执行权利要求中所引用的多个技术特征的功能。 权利要 求中的任何附图标记不应理解为对范围的限制。  Other variations to the disclosed embodiments can be understood and effected by those skilled in the <RTIgt; In the claims, the <RTIgt; "comprising"</RTI> does not exclude other elements and steps, and the terms "a" or "an" do not exclude the plural. In the practical application of the invention, a part may perform the functions of the plurality of technical features recited in the claims. Any reference signs in the claims should not be construed as limiting the scope.

Claims

权 利 要 求 书 Claim
1. 一种图像传感器芯片的封装方法， 所述方法包括以下步骤：A method of packaging an image sensor chip, the method comprising the steps of:
A.通过粘度可变的粘合剂将图像传感器晶圓的感光面与基板相 粘合； A. bonding the photosensitive surface of the image sensor wafer to the substrate by a variable viscosity adhesive;
B. 将图像传感器的焊盘连接到所述图像传感器晶圆背面的焊接 材料；  B. connecting the pad of the image sensor to the solder material on the back side of the image sensor wafer;
C. 切割所述图像传感器晶圓以获得分离的图像传感器芯片； 离的图像传感器芯片剥离。  C. Cutting the image sensor wafer to obtain a separate image sensor chip; the off image sensor chip is stripped.
2. 根据权利要求 1所述的封装方法， 其特征在于， 在所述步骤 A之后， 还包括以下步骤：  The encapsulation method according to claim 1, further comprising the following steps after the step A:
A，. 从所述图像传感器晶圓的背面对所述图像传感器晶圓进行 减薄。  A,. thinning the image sensor wafer from the back side of the image sensor wafer.
3. 根据权利要求 1所述的封装方法， 其特征在于， 在所述步驟 B 中， 通过侧面引线或通孔将图像传感器的焊盘连接到所述图像传 感器晶圆背面的焊接材料。  3. The packaging method according to claim 1, wherein in the step B, the pad of the image sensor is connected to the solder material on the back side of the image sensor wafer through a side lead or a via.
4. 根据权利要求 1所述的封装方法， 其特征在于， 所述步骤 A 包括：  The encapsulation method according to claim 1, wherein the step A comprises:
- 在所述基板上涂布所述粘度可变的粘合剂；  Coating the variable viscosity adhesive on the substrate;
- 部分刻蚀所述粘度可变的粘合剂；  - partially etching the variable viscosity adhesive;
- 将所述基板粘合到所述图像传感器晶圆的感光面，其中所述粘 度可变的粘合剂位于所述图像传感器晶圆的非感光区域。  - bonding the substrate to a photosensitive surface of the image sensor wafer, wherein the viscosity-variable adhesive is located in a non-photosensitive area of the image sensor wafer.
5. 根据权利要求 1所述的封装方法， 其特征在于， 所述步骤 A 包括：  The encapsulation method according to claim 1, wherein the step A comprises:
- 在所述图像传感器晶圆的感光面上涂布所述粘度可变的粘合 剂；  Applying said variable viscosity adhesive to a photosensitive surface of said image sensor wafer;
- 部分刻蚀所述粘度可变的粘合剂，以移除所述图像传感器晶圆 的感光区域的所述粘度可变的粘合剂； - 将所述基板粘合到所述图像传感器晶圓的感光面。 - partially etching the viscosity-variable adhesive to remove the viscosity-variable adhesive of the photosensitive region of the image sensor wafer; - bonding the substrate to the photosensitive surface of the image sensor wafer.
6. 根据权利要求 1所述的封装方法， 其特征在于， 所述步骤 A 包括：  The encapsulation method according to claim 1, wherein the step A comprises:
- 在所述基板上涂布所述粘度可变的粘合剂；  Coating the variable viscosity adhesive on the substrate;
- 在所述涂布了所述粘度可变的粘合剂后的基板上涂布封装粘 合剂；  Applying a package adhesive on the substrate after coating the viscosity-variable adhesive;
- 部分刻蚀所述封装粘合剂；  - partially etching the encapsulating adhesive;
- 将所述基板粘合到所述图像传感器晶圆的感光面，其中所述封 装粘合剂位于所述图像传感器晶圓的非感光区域上。  - bonding the substrate to a photosensitive surface of the image sensor wafer, wherein the encapsulation adhesive is on a non-photosensitive area of the image sensor wafer.
7. 根据权利要求 1所述的封装方法， 其特征在于， 所述步蝶 A 包括：  The encapsulation method according to claim 1, wherein the step butterfly A comprises:
- 在所述图像传感器晶圓的感光面上涂布所述封装粘合剂； - 部分刻蚀所述封装粘合剂；  Applying the encapsulating adhesive on a photosensitive surface of the image sensor wafer; - partially etching the encapsulating adhesive;
- 在所述基板上涂布所述粘度可变的粘合剂；  Coating the variable viscosity adhesive on the substrate;
- 将所述基板粘合到所述图像传感器晶圓的感光面，其中所述封 装粘合剂位于所述图像传感器的非感光区域。  - bonding the substrate to a photosensitive surface of the image sensor wafer, wherein the encapsulation adhesive is located in a non-photosensitive area of the image sensor.
8. 根据权利要求 1所述的封装方法， 其特征在于， 所述粘度可 变的粘合剂为热熔胶或者紫外光敏胶。  8. The packaging method according to claim 1, wherein the viscosity-variable adhesive is a hot melt adhesive or an ultraviolet photosensitive adhesive.
9. 根据权利要求 5或 6所述的封装方法， 其特征在于， 所述封 装粘合剂包括环氧树脂。  9. The method of packaging according to claim 5 or 6, wherein the encapsulating adhesive comprises an epoxy resin.
10. 根据权利要求 1所述的封装方法， 其特征在于， 所述粘度可 变的粘合剂为热熔胶， 在所述步骤 D中通过加热所述图像传感器芯 片来改变所述粘度可变的粘合剂的粘性。  10. The packaging method according to claim 1, wherein the viscosity-variable adhesive is a hot melt adhesive, and the viscosity is changed by heating the image sensor chip in the step D. The viscosity of the adhesive.
11. 根据权利要求 1所述的封装方法， 其特征在于， 所述粘度可 变的粘合剂为紫外光敏胶， 在所述步骤 D中通过紫外光照射所述图 像传感器芯片来改变所述粘度可变的粘合剂的粘性。  11. The packaging method according to claim 1, wherein the viscosity-variable adhesive is an ultraviolet photosensitive adhesive, and the image sensor chip is irradiated with ultraviolet light to change the viscosity in the step D. The viscosity of the variable adhesive.
12. 根据权利要求 1至 11中任一项所述的封装方法， 其特征在 于， 所述基板为玻璃。  The packaging method according to any one of claims 1 to 11, wherein the substrate is glass.
13. —种摄像模组，包括图像传感器以及所述图像传感器感光区 域一侧上方的光学镜头， 其中， 所述图像传感器感光区域与所述光 学镜头之间没有固体透光介质。 13. A camera module comprising an image sensor and a photosensitive area of the image sensor An optical lens above one side of the field, wherein there is no solid transparent medium between the image sensor photosensitive area and the optical lens.
14. 根据权利要求 13所述的摄像模组， 其特征在于， 还包括多 个焊点， 其位于所述图像传感器与所述感光区域相对的另一侧， 所 述多个焊点分别通过侧面引线或通孔连接至所述图像传感器的焊 盘。  The camera module according to claim 13, further comprising a plurality of solder joints located on the other side of the image sensor opposite to the photosensitive region, wherein the plurality of solder joints respectively pass through the side A lead or via is connected to the pad of the image sensor.
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