WO2013058319A1 - Film formation device and film formation method - Google Patents

Film formation device and film formation method Download PDF

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Publication number
WO2013058319A1
WO2013058319A1 PCT/JP2012/076955 JP2012076955W WO2013058319A1 WO 2013058319 A1 WO2013058319 A1 WO 2013058319A1 JP 2012076955 W JP2012076955 W JP 2012076955W WO 2013058319 A1 WO2013058319 A1 WO 2013058319A1
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WO
WIPO (PCT)
Prior art keywords
film
inert gas
film forming
forming apparatus
processed
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PCT/JP2012/076955
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French (fr)
Japanese (ja)
Inventor
知彦 江面
安達　千波矢
Original Assignee
東京エレクトロン株式会社
国立大学法人九州大学
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Publication of WO2013058319A1 publication Critical patent/WO2013058319A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates

Definitions

  • the present invention relates to a film forming apparatus and a film forming method.
  • a film forming method for depositing a film on a substrate by spraying a mixed gas of a deposition material and a carrier gas onto the substrate is known (see, for example, Patent Document 1).
  • a plurality of organic films can be continuously deposited on a substrate by spraying a deposition material onto the substrate in order from a plurality of nozzles. Thereby, an organic EL element can be manufactured.
  • the temperature of the surface of the object on which the film is deposited or the temperature of the deposited film is not performed to adjust the temperature of the surface of the object on which the film is deposited or the temperature of the deposited film.
  • the entire object to be processed is heated. Will be affected.
  • the object to be processed includes an organic film that is weak against heat, the influence of heat becomes significant.
  • the organic film already formed on the substrate may be altered or decomposed when the substrate is heated by a heater in the stage. is there. For this reason, it is difficult to adjust the temperature when forming a film on a heat-sensitive film (for example, an organic film).
  • the present invention has been made in view of the above circumstances, and a film forming apparatus capable of locally adjusting a surface of a target object or a surface of a film deposited on the target object to a desired temperature, and An object is to provide a film forming method.
  • a film forming apparatus includes a processing chamber for storing a target object, a gas containing a deposition material and a carrier gas for depositing a film on the target object.
  • a first nozzle that sprays the object to be processed, a second nozzle that sprays the first inert gas onto the film, and a temperature controller that adjusts the temperature of the first inert gas.
  • the first inert gas whose temperature is adjusted by the temperature controller is sprayed from the second nozzle onto the film deposited on the object to be processed.
  • membrane can be locally adjusted to desired temperature, suppressing the temperature change of a to-be-processed object.
  • a film forming apparatus includes a processing chamber for storing a target object, and a gas containing a deposition material and a carrier gas for depositing a film on the target target object.
  • a temperature controller for adjusting the temperature.
  • the first inert gas whose temperature is adjusted by the temperature controller is sprayed from the second nozzle to the object to be processed.
  • the surface of a to-be-processed object can be locally adjusted to desired temperature.
  • a film can be deposited on the object to be processed under favorable conditions.
  • the vapor deposition material may not be substantially added to the first inert gas. In this case, it is possible to suppress the deposition of an unintended film on the surface of the object to be processed or the film.
  • the inert gas to which substantially no vapor deposition material is added includes not only an inert gas to which no vapor deposition material is added, but also an inert gas to which a very small amount of vapor deposition material to which no film is deposited is added.
  • the heater may be a heater that heats the first inert gas.
  • the surface of the object to be processed or the film can be locally heated.
  • the temperature controller may be a cooler that cools the first inert gas.
  • the surface of the object to be processed or the film can be locally cooled.
  • the temperature controller is a heater that heats the first inert gas, and the film forming apparatus sprays the heated first inert gas onto the film, and then a second inert gas. You may further provide the 3rd nozzle which sprays gas on the said film
  • the surface of the heated film can be locally cooled.
  • the second inert gas may be the same as or different from the first inert gas.
  • the temperature controller is a heater for heating the first inert gas, and the film forming apparatus sprays the heated first inert gas on the object to be processed, and then the gas is Prior to spraying on the object to be processed, a third nozzle for spraying the second inert gas onto the object to be processed and a cooler for cooling the second inert gas may be further provided.
  • the surface of the heated object to be processed can be locally cooled.
  • a film can be deposited on the object to be processed under favorable conditions.
  • a film forming method includes a step of depositing a film on a target object by spraying a gas containing a deposition material and a carrier gas on the target object, and a temperature-controlled first. Spraying the inert gas on the film.
  • the temperature-controlled first inert gas is sprayed onto the film deposited on the object to be processed.
  • membrane can be locally adjusted to desired temperature, suppressing the temperature change of a to-be-processed object.
  • a film forming method includes a step of spraying a temperature-adjusted first inert gas onto a target object, and after spraying the first inert gas onto a target object. And depositing a film on the target object by spraying a gas containing a deposition material and a carrier gas on the target object.
  • the temperature-controlled first inert gas is sprayed on the object to be processed.
  • the surface of a to-be-processed object can be locally adjusted to desired temperature.
  • a film can be deposited on the object to be processed under favorable conditions.
  • the vapor deposition material may not be substantially added to the first inert gas. In this case, it is possible to suppress the deposition of an unintended film on the surface of the object to be processed or the film.
  • the film may be heated by spraying the heated first inert gas onto the film.
  • the surface of the film can be locally heated.
  • the film forming method may further include a step of cooling the film by heating the film and then spraying a cooled second inert gas onto the film.
  • the surface of the heated film can be locally cooled.
  • the film may be cooled by spraying the cooled first inert gas onto the film.
  • the surface of the film can be locally cooled.
  • the target object may be heated by spraying the heated first inert gas on the target object.
  • the surface of the object to be processed can be locally heated.
  • the film forming method further includes a step of cooling the object to be processed by heating the object to be processed and then spraying a cooled second inert gas onto the object to be processed. After cooling the body, a film may be deposited on the object to be processed. In this case, the surface of the heated object to be processed can be locally cooled. As a result, a film can be deposited on the object to be processed under favorable conditions.
  • the object to be processed may be cooled by spraying the cooled first inert gas on the object to be processed.
  • the surface of the object to be processed can be locally cooled.
  • a film forming apparatus and a film forming method capable of locally adjusting the surface of a target object or the surface of a film deposited on the target object to a desired temperature.
  • FIG. 1 is a diagram schematically showing a film forming apparatus according to the first embodiment.
  • FIG. 1 shows an XYZ orthogonal coordinate system.
  • the film forming apparatus 10 shown in FIG. 1 includes a processing chamber 12 that accommodates a workpiece P.
  • One surface (film formation surface) of the workpiece P is directed downward in the vertical direction (Z direction), for example. That is, the film forming apparatus 10 is a face-down type film forming apparatus.
  • the workpiece P includes, for example, a substrate S, an electrode 52 formed on the substrate S, and a film 56a formed on the electrode 52.
  • the substrate S is a transparent substrate such as a glass substrate.
  • the shape of the substrate S is, for example, a rectangle.
  • the electrode 52 is a transparent electrode such as ITO.
  • a vacuum pump 15 is connected to the processing chamber 12 via a pipe 12g. The inside of the processing chamber 12 can be depressurized by the vacuum pump 15.
  • the film forming apparatus 10 includes a nozzle 16b (first nozzle) for spraying a gas containing a deposition material and a carrier gas for depositing the film 56b on the target object P onto the target object P.
  • the vapor deposition material may be one or more kinds of vaporized organic materials.
  • the carrier gas include inert gases such as Ar gas and nitrogen gas.
  • the film forming apparatus 10 may include a nozzle 16a and a nozzle 16c having the same structure as the nozzle 16b.
  • the nozzle 16 a sprays a deposition material and a carrier gas for depositing the film 56 a on the electrode 52 onto the electrode 52.
  • the nozzle 16c sprays a deposition material and a carrier gas for depositing the film 56c (see FIG. 2) on the film 56b.
  • the nozzles 16a to 16c are arranged in this order along the moving direction (X direction) of the workpiece P.
  • the films 56a to 56c are, for example, organic films.
  • Vapor deposition material supply sources 20a to 20c disposed outside the processing chamber 12 are connected to the nozzles 16a to 16c via pipes 12a to 12c, respectively.
  • the vapor deposition material supply sources 20a to 20c contain, for example, solid organic materials. Solid organic material is vaporized by heating.
  • An inert gas supply source 24 is connected to the vapor deposition material supply sources 20a to 20c via pipes 22a to 22c, respectively. The inert gas supplied from the inert gas supply source 24 is mixed with the vapor deposition material vaporized in the vapor deposition material supply sources 20a to 20c, and introduced into the processing chamber 12. Thereby, a plurality of types of films 56 a to 56 c can be continuously deposited on the substrate S and the electrode 52.
  • a valve 26a is disposed in the middle of the pipe 12a.
  • a connecting portion 28a for connecting the pipe 12a is disposed between the valve 26a and the vapor deposition material supply source 20a.
  • a valve 32a is arranged in the middle of the pipe 22a.
  • the connection part 30a which connects the piping 22a is arrange
  • a mass flow controller 34 a is disposed between the valve 32 a and the inert gas supply source 24.
  • valve 26b the connection part 28b, the connection part 30b, the valve 32b, and the mass flow controller 34b are arranged in this order.
  • valve 26c a valve 26c, a connection portion 28c, a connection portion 30c, a valve 32c, and a mass flow controller 34c are arranged in this order.
  • the film forming apparatus 10 includes a nozzle 18 (second nozzle) that sprays an inert gas G1 (first inert gas) onto the film 56b.
  • the inert gas G1 may be a rare gas such as Ar gas or nitrogen gas.
  • the inert gas G1 may be the same as or different from the carrier gas.
  • a vapor deposition material may not be intentionally added to the inert gas G1, or a trace amount of a vapor deposition material that does not deposit a film may be added in a trace amount.
  • the film forming apparatus 10 includes a temperature controller 36 that adjusts the temperature of the inert gas G1.
  • the temperature controller 36 is connected to the nozzle 18 through the pipe 12e.
  • An inert gas supply source 24 is connected to the temperature controller 36 via a pipe 22e. Between the nozzle 18 and the temperature controller 36, the valve 26e and the connection part 28e are arranged in this order. Between the temperature controller 36 and the inert gas supply source 24, the connection part 30e, the valve 32e, and the mass flow controller 34e are arranged in this order.
  • the temperature of the inert gas supplied from the inert gas supply source 24 is adjusted by the temperature controller 36 and is introduced into the processing chamber 12 as the temperature-controlled inert gas G1.
  • the film forming apparatus 10 is a so-called linear source type film forming apparatus.
  • a gas containing a deposition material and a carrier gas is released from the openings of the nozzles 16a to 16c.
  • shutters 17a to 17c capable of blocking the vapor deposition material may be disposed, respectively.
  • a rectangular opening extending in the Y direction is formed at the tip of the nozzle 18.
  • the temperature-controlled inert gas G1 is released from the opening of the nozzle 18.
  • a shutter 17e capable of blocking the inert gas G1 may be disposed on the opening of the nozzle 18.
  • the inert gas G1 ejected from the opening of the nozzle 18 reaches the surface of the film 56b. Since the shutters 17a to 17c are closed, the gas ejected from the openings of the nozzles 16a to 16c does not reach the film 56b.
  • the shutters 17a to 17c and 17e are connected to the processing chamber 12, and rotate around a rotation axis along the Y direction, for example. As a result, the shutters 17a to 17c and 17e can be arranged on the openings of the nozzles 16a to 16c and 18 and can be retracted from the openings as necessary.
  • the film forming apparatus 10 may include a driving device 40 that drives the stage 38 holding the workpiece P in the X direction.
  • a driving device 40 that drives the stage 38 holding the workpiece P in the X direction.
  • the workpiece P moves in the X direction relative to the nozzles 16a to 16c and 18.
  • An arrow A indicates the moving direction of the stage 38.
  • the nozzle 18 is disposed downstream of the nozzle 16b and upstream of the nozzle 16c. Accordingly, the object P to be processed is disposed so as to face the openings of the nozzles 16a, 16b, 18, 16c in order by moving in the X direction.
  • the stage 38 may incorporate an electrostatic chuck that holds the workpiece P.
  • the stage 38 is connected to the rail 42 by, for example, a support portion 38a.
  • the rail 42 is connected to the processing chamber 12.
  • the stage 38 and the support portion 38 a are moved by the drive device 40 so as to slide on the rail 42.
  • the workpiece P can be introduced into the processing chamber 12 through a gate valve 44a formed in the processing chamber 12, and can be carried out of the processing chamber 12 through a gate valve 44b formed in the processing chamber 12. is there.
  • the inert gas G ⁇ b> 1 whose temperature has been adjusted by the temperature controller 36 is sprayed from the nozzle 18 onto the film 56 b deposited on the workpiece P.
  • the surface of the film 56b can be locally adjusted to a desired temperature while suppressing the temperature change of the workpiece P.
  • the crystallization speed of the film 56b or the film formation speed of the film 56c can be controlled.
  • the linear region on the surface of the film 56b can be adjusted to a desired temperature.
  • the line-shaped region can be used as a circuit pattern, for example.
  • the temperature controller 36 may be a heater that heats the inert gas G1.
  • the surface of the film 56b can be locally heated.
  • crystallization can be promoted by annealing the surface of the film 56b.
  • a substance or moisture that can be a nucleus in crystallization can be removed, so that a film 56b made of crystals with few crystal grain boundaries can be formed.
  • Such a film 56b is effective in a device that requires high mobility (for example, an organic transistor).
  • the film 56c can be deposited on the film 56b under favorable conditions.
  • diffusion of the dopant can be controlled by heating the surface of the film 56b.
  • the film 56c is deposited on the film 56b, the film 56c can be deposited on the film 56b under favorable conditions.
  • the temperature of the inert gas G1 is adjusted to 300 to 400K, for example. Since the entire object to be processed P is not heated, the substrate S, the electrode 52, the film 56a, etc. in the object to be processed P are hardly damaged.
  • the temperature controller 36 may be a cooler that cools the inert gas G1.
  • the surface of the film 56b can be locally cooled. By cooling the surface of the film 56b to a desired temperature, the film 56c can be deposited on the film 56b under favorable conditions.
  • FIG. 2 is a diagram schematically illustrating an example of an electronic device manufactured using the film forming apparatus according to the first embodiment.
  • the electronic device 50 shown in FIG. 2 is, for example, an organic EL element.
  • the electronic device 50 includes an electrode 52 (anode) and an electrode 54 (cathode) formed on the substrate S.
  • a light emitting layer 56 is provided between the electrode 52 and the electrode 54.
  • the light emitting layer 56 includes films 56a to 56c such as organic films.
  • the films 56a to 56c are provided in this order from the electrode 52 to the electrode 54.
  • a power source 58 is connected between the electrode 52 and the electrode 54 via wiring. When a current is injected into the light emitting layer 56 by the power source 58, the light 60 emitted from the light emitting layer 56 passes through the electrode 52 and the substrate S and is emitted to the outside.
  • the films 56a to 56c can be formed by the film forming apparatus 10.
  • three kinds of vapor deposition materials for forming these three layers are supplied from the nozzles 16a to 16c, respectively.
  • the surface of the film 56b can be locally adjusted to a desired temperature, so that the electronic device 50 having good characteristics can be manufactured.
  • the electronic device 50 may be, for example, a semiconductor device, a solar cell, an optical device, or the like.
  • FIG. 3 is a flowchart showing the film forming method according to the first embodiment.
  • the film forming method according to the present embodiment can be performed as follows using the film forming apparatus 10 described above.
  • a film 56a is deposited on the electrode 52 by spraying a gas containing a deposition material and a carrier gas for depositing the film 56a onto the electrode 52 on the substrate S (step S1). At this time, the substrate S and the electrode 52 are disposed to face the opening of the nozzle 16a.
  • the film 56b is vapor-deposited on the to-be-processed object P by spraying the gas containing the vapor deposition material and carrier gas for vapor-depositing the film 56b on the to-be-processed object P (process S2).
  • the substrate S, the electrode 52, and the film 56a are disposed to face the opening of the nozzle 16b.
  • step S3 the heated inert gas G1 is sprayed onto the film 56b (step S3).
  • the workpiece P is disposed opposite to the opening of the nozzle 18 (see FIG. 1).
  • a film 56c is deposited on the film 56b by spraying a gas containing a deposition material and a carrier gas for depositing the film 56c onto the film 56b (Step S4). At this time, the object to be processed P and the film 56c are disposed to face the opening of the nozzle 16c.
  • the heated inert gas G1 is sprayed onto the film 56b deposited on the workpiece P in step S2.
  • the surface of the film 56b can be locally heated to a desired temperature while suppressing the temperature rise of the workpiece P.
  • the film 56b may be cooled by spraying a cooled inert gas G1 on the film 56b instead of the heated inert gas G1.
  • the surface of the film 56b can be locally cooled to a desired temperature while suppressing the temperature drop of the workpiece P.
  • FIG. 4 is a diagram schematically showing a film forming apparatus according to the second embodiment.
  • the film forming apparatus 10A shown in FIG. 4 has the same configuration as the film forming apparatus 10 except that the distance D2 between the nozzle 18 and the nozzle 16c is larger than the distance D1 between the nozzle 18 and the nozzle 16b. Yes.
  • the film forming apparatus 10A at least the same effects as the film forming apparatus 10 can be obtained.
  • the film forming method according to the second embodiment can be carried out by using the film forming device 10A instead of the film forming device 10 in the same manner as the film forming method according to the first embodiment.
  • the temperature controller 36 is a heater that heats the inert gas G1
  • the heated film 56b can be sufficiently cooled by making the distance D2 wider than the distance D1. Therefore, after cooling the surface of the film 56b to a desired temperature, the film 56c can be deposited on the film 56b.
  • the crystallization speed of the film 56b can be controlled by appropriately adjusting the distance D2.
  • FIG. 5 is a diagram schematically showing a film forming apparatus according to the third embodiment.
  • the temperature controller 36 of the film forming apparatus 10B shown in FIG. 5 is a heater that heats the inert gas G1.
  • the film forming apparatus 10B includes a nozzle 18a (third nozzle) that sprays an inert gas G2 (second inert gas) onto the film 56b after the heated inert gas G1 is sprayed onto the film 56b.
  • the cooler 36a is connected to the nozzle 18a via the pipe 12f.
  • An inert gas supply source 24 is connected to the cooler 36a via a pipe 22f.
  • the valve 26f and the connection part 28f are arranged in this order.
  • a connecting portion 30f, a valve 32f, and a mass flow controller 34f are arranged in this order.
  • the inert gas supplied from the inert gas supply source 24 is cooled in the cooler 36a, and is introduced into the processing chamber 12 as the inert gas G2.
  • a shutter 17f capable of blocking the inert gas G2 may be disposed on the opening of the nozzle 18a.
  • the film forming apparatus 10B has the same configuration as the film forming apparatus 10 except for the above configuration.
  • the film forming apparatus 10B at least the same effects as the film forming apparatus 10 can be obtained.
  • the surface of the heated film 56b can be locally cooled by the inert gas G2 injected from the nozzle 18a.
  • the same effect as the film forming apparatus 10A can be obtained.
  • the film forming apparatus 10B after the surface of the film 56b is heated by the inert gas G1, the surface of the film 56b is quenched (quenched) by the inert gas G2, so that the surface of the film 56b is flattened by reflow. Can do.
  • FIG. 6 is a flowchart showing a film forming method according to the third embodiment.
  • the film forming method according to the present embodiment can be performed using the above-described film forming apparatus 10B.
  • the film forming method according to the present embodiment further includes a step S3a for cooling the film 56b by spraying the cooled inert gas G2 onto the film 56b between the step S3 and the step S4 in FIG. For this reason, the surface of the film 56b heated in the step S3 can be locally cooled in the step S3a.
  • FIG. 7 is a diagram schematically showing a film forming apparatus according to the fourth embodiment.
  • the film forming apparatus 10C shown in FIG. 7 has the same configuration as the film forming apparatus 10 except that the arrangement order of the nozzles 16a, 16b and 18 is different.
  • the nozzle 18 is arranged in front of the nozzle 16a in the X direction.
  • the film forming apparatus 10C includes a nozzle 16a (first nozzle) for spraying a gas containing a deposition material and a carrier gas for depositing the film 56a on the target object P1, and the nozzle 16a.
  • a nozzle 18 (second nozzle) for spraying an inert gas G1 onto the object to be treated P1 before the gas is sprayed onto the object to be treated P1 is provided.
  • the object P1 includes a substrate S and an electrode 52.
  • the inert gas G1 whose temperature has been adjusted by the temperature controller 36 is sprayed from the nozzle 18 onto the object P1.
  • the surface of the to-be-processed object P1 can be locally adjusted to desired temperature.
  • the film 56a can be deposited on the workpiece P1 under favorable conditions.
  • the crystallization speed of the film 56a can be controlled.
  • the temperature controller 36 is a heater that heats the inert gas G1
  • the surface of the object P1 can be locally heated.
  • the surface of the target object P1 can be cleaned by heating the surface of the target object P1 to vaporize the foreign substance.
  • the film 56a can be deposited on the target object P1 under favorable conditions.
  • the temperature controller 36 is a cooler that cools the inert gas G1
  • the surface of the workpiece P1 can be locally cooled.
  • the film 56a can be deposited on the object P1 under favorable conditions.
  • FIG. 8 is a flowchart showing a film forming method according to the fourth embodiment.
  • the film forming method according to the present embodiment can be performed using the above-described film forming apparatus 10C.
  • step S3 is performed before step S1.
  • the heated inert gas G1 is sprayed onto the workpiece P1.
  • the surface of the to-be-processed object P1 can be heated locally to desired temperature.
  • the film 56a can be deposited on the workpiece P1 under favorable conditions.
  • the object P1 may be cooled by spraying the object P1 with the cooled inert gas G1 instead of the heated inert gas G1.
  • the surface of the workpiece P1 can be locally cooled to a desired temperature.
  • FIG. 9 is a diagram schematically showing a film forming apparatus according to the fifth embodiment.
  • the film forming apparatus 10D shown in FIG. 9 has the same configuration as the film forming apparatus 10C except that the distance D4 between the nozzle 18 and the nozzle 16a is wider than the distance D3 between the nozzle 16a and the nozzle 16b. Yes.
  • the film forming apparatus 10D can obtain at least the same effects as the film forming apparatus 10C.
  • the film forming method according to the fifth embodiment can be performed in the same manner as the film forming method according to the fourth embodiment, using the film forming device 10D instead of the film forming device 10C.
  • the temperature controller 36 is a heater that heats the inert gas G1
  • the heated object P1 can be sufficiently cooled by making the interval D4 wider than the interval D3. . Therefore, the film 56a can be deposited on the target object P1 after the surface of the target object P1 is cooled to a desired temperature.
  • FIG. 10 is a diagram schematically showing a film forming apparatus according to the sixth embodiment.
  • the temperature controller 36 of the film forming apparatus 10E shown in FIG. 10 is a heater that heats the inert gas G1.
  • the film forming apparatus 10E is a nozzle that sprays the inert gas G2 onto the film 56b after spraying the heated inert gas G1 onto the target object P1 and before spraying the gas from the nozzle 16a onto the target object P1.
  • 18a and a cooler 36a for cooling the inert gas G2.
  • the film forming apparatus 10E has the same configuration as the film forming apparatus 10C except for the above configuration.
  • the film forming apparatus 10E can obtain at least the same effects as the film forming apparatus 10C.
  • the surface of the object P1 heated to a desired temperature can be locally cooled.
  • the same effects as those of the other embodiments can be obtained by the respective configurations of the film forming apparatus 10E.
  • FIG. 11 is a flowchart showing a film forming method according to the sixth embodiment.
  • the film forming method according to the present embodiment can be performed using the above-described film forming apparatus 10E.
  • the surface of the to-be-processed object P1 heated in process S3 can be cooled locally in process S3a.
  • the film 56a can be deposited on the workpiece P1 under good conditions.
  • FIG. 12 is a diagram schematically showing a film forming apparatus according to the seventh embodiment.
  • a film forming apparatus 10F shown in FIG. 12 includes a nozzle 16d that sprays a gas containing a deposition material and a carrier gas for depositing a film 56d (see FIG. 13) on the film 56c onto the film 56c.
  • a vapor deposition material supply source 20d disposed outside the processing chamber 12 is connected to the nozzle 16d via a pipe 12d.
  • An inert gas supply source 24 is connected to the vapor deposition material supply source 20d through a pipe 22d.
  • a valve 26d, a connection portion 28d, a connection portion 30d, a valve 32d, and a mass flow controller 34d are arranged in this order.
  • the film forming apparatus 10F has the same configuration as the film forming apparatus 10 except for the above configuration. In the film forming apparatus 10F, at least the same effects as the film forming apparatus 10 can be obtained. In the film forming apparatus 10F, the same effects as those of the other embodiments can be obtained by the components of the film forming apparatus 10F.
  • FIG. 13 is a diagram schematically illustrating an example of an electronic device manufactured using the film forming apparatus according to the seventh embodiment.
  • a solar cell 50A shown in FIG. 13 includes electrodes 52a and 52b, films 56a to 56d, and an electrode 54 provided in this order on a substrate S.
  • Substrate S Glass substrate electrode 52a: ITO film (thickness 100 nm) Electrode 52b: MoO 3 film (thickness 13 nm) Film 56a: ClAlPc film (thickness 13 nm) Film 56b: Co-deposited film (thickness 13 nm) made of ClAlPc and C70 Film 56c: C60 film (thickness 22 nm) Film 56d: BCP film (thickness 10 nm) Electrode 54; Ag film (100 nm thickness)
  • the films 56a to 56d can be formed by the film forming apparatus 10F.
  • four types of vapor deposition materials for forming these four layers are supplied from the nozzles 16a to 16d, respectively.
  • the surface of the film 56b can be locally adjusted to a desired temperature, so that a solar cell 50A having good characteristics can be manufactured.
  • the film 56b is a layer that generates holes and carriers, high mobility is required.
  • ClAlPc is crystalline and C70 (fullerene) is amorphous.
  • the film 56d is an organic film that functions as a hole block layer.
  • FIG. 14 is a diagram schematically showing a film forming apparatus according to the eighth embodiment.
  • a film forming apparatus 10G shown in FIG. 14 has the same configuration as that of the film forming apparatus 10B except that the nozzles 16a and 16c and the related configuration are not provided.
  • the nozzle 16b sprays a gas including a deposition material and a carrier gas for depositing the film 56b on the target object P2 to the target object P2.
  • the nozzle 18 sprays the heated inert gas G1 onto the film 56b.
  • the nozzle 18a sprays the cooled inert gas G2 onto the film 56b.
  • the film 56b is an organic semiconductor film having a low glass transition temperature. Examples of the organic semiconductor material contained in the organic semiconductor film include alkylbenzothienobenzothiophene (Cn-BTBT).
  • the film forming apparatus 10G may not include the nozzle 18a and the configuration related thereto. In that case, the film 56b can be cooled by natural cooling.
  • the surface of the film 56b can be locally heated by the inert gas G1 ejected from the nozzle 18.
  • the membrane 56b is fluidized or liquefied.
  • the fluidized or liquefied organic semiconductor material wets and spreads on the workpiece P2 due to surface tension. Therefore, the film 56b having a surface with less unevenness can be obtained. Even when the workpiece P2 has a trench, the coverage of the film 56b with respect to the workpiece P2 can be improved. Since the film 56b is heated in a vacuum atmosphere or an inert gas atmosphere, a chemical reaction such as oxidation is suppressed.
  • the surface of the heated film 56b After heating the surface of the film 56b with the inert gas G1, the surface of the heated film 56b can be locally cooled by the inert gas G2 sprayed from the nozzle 18a or by natural cooling. Thereby, recrystallization (single crystallization) of the organic semiconductor material proceeds. As a result, a film 56b with few carrier traps due to grain boundaries is obtained. Such a film 56b has a high mobility.
  • FIG. 15 is a diagram schematically illustrating an example of an electronic device manufactured using the film forming apparatus according to the eighth embodiment.
  • the organic transistor 50B shown in FIG. 15 has a bottom gate bottom contact (BGBC) structure.
  • the organic transistor 50B includes a gate electrode GT provided on the substrate SB.
  • the gate electrode GT is covered with an insulating film IS.
  • a source electrode SC and a drain electrode DN which are separated from each other are provided.
  • a trench T is formed on the surface of the insulating film IS between the source electrode SC and the drain electrode DN.
  • the side wall of the trench T may have a vertical shape or may have a reverse taper shape.
  • a film 56b is provided on the source electrode SC, the drain electrode DN, and the trench T.
  • a bank portion BN is provided so as to surround the source electrode SC and the drain electrode DN.
  • a film 56b is also provided on the top surface of the bank portion BN.
  • the film 56b can be formed by the film forming apparatus 10G in FIG.
  • the configuration other than the film 56b of the organic transistor 50B corresponds to the target object P2 in FIG.
  • the film 56b heated by the inert gas G1 is fluidized or liquefied
  • the fluidized or liquefied organic semiconductor material wets and spreads over the insulating film IS, the source electrode SC, and the drain electrode DN.
  • a film 56b having a surface with less unevenness is obtained.
  • the coverage of the film 56b particularly in the trench T is improved. Therefore, in the organic transistor 50B, excellent transistor characteristics (for example, Id-Vds characteristics, Id-Vgs characteristics, etc.) can be obtained.
  • the present invention is not limited to the above-mentioned embodiment.
  • the configurations of the above embodiments may be arbitrarily combined.
  • the film forming apparatus 10 may not include at least one of the nozzles 16a and 16c.
  • the film forming apparatus 10 may be a face-up type film forming apparatus. That is, one surface (film formation surface) of the workpiece P may face upward in the vertical direction. Further, the nozzle 18 may be disposed between the nozzle 16a and the nozzle 16b.

Abstract

　This film formation device is provided with: a processing chamber that accommodates an object to be processed; a first nozzle that sprays the object to be processed with a gas including a carrier gas and a vapor deposition material for depositing a film on the object to be processed; a second nozzle that sprays a first inert gas on the film; and a temperature adjuster that adjusts the temperature of the first inert gas.

Description

成膜装置及び成膜方法Film forming apparatus and film forming method
　本発明は、成膜装置及び成膜方法に関する。 The present invention relates to a film forming apparatus and a film forming method.
　蒸着材料とキャリアガスの混合ガスを基板上に噴き付けることによって、基板上に膜を蒸着する成膜方法が知られている（例えば特許文献１参照）。この成膜方法では、複数のノズルから順番に蒸着材料を基板に噴き付けることによって、基板上に複数の有機膜を連続的に蒸着することができる。これにより、有機ＥＬ素子を製造することができる。 A film forming method for depositing a film on a substrate by spraying a mixed gas of a deposition material and a carrier gas onto the substrate is known (see, for example, Patent Document 1). In this film forming method, a plurality of organic films can be continuously deposited on a substrate by spraying a deposition material onto the substrate in order from a plurality of nozzles. Thereby, an organic EL element can be manufactured.
特開２００７－１６９７２８号公報JP 2007-169728 A
　しかしながら、膜が蒸着される被処理体の表面、又は、蒸着された膜の表面の温度を調節することは行われていない。被処理体又は膜の温度を調節するために、例えば被処理体を保持するステージ内に埋め込まれたヒーターで加熱を行うと、被処理体全体が加熱されるので、被処理体の内部が熱の影響を受けてしまう。被処理体が熱に弱い有機膜を含む場合には、熱の影響が顕著となる。例えば、有機ＥＬ素子又は太陽電池等に用いられる複数の有機膜を基板上に形成する場合、ステージ内のヒーターにより基板を加熱すると、既に基板上に形成された有機膜が変質又は分解するおそれがある。このため、熱に弱い膜（例えば有機膜）上に膜を形成する際に温度調節を行うことは困難である。 However, it is not performed to adjust the temperature of the surface of the object on which the film is deposited or the temperature of the deposited film. In order to adjust the temperature of the object to be processed or the film, for example, when heating is performed with a heater embedded in a stage that holds the object to be processed, the entire object to be processed is heated. Will be affected. When the object to be processed includes an organic film that is weak against heat, the influence of heat becomes significant. For example, when a plurality of organic films used for an organic EL element or a solar cell are formed on a substrate, the organic film already formed on the substrate may be altered or decomposed when the substrate is heated by a heater in the stage. is there. For this reason, it is difficult to adjust the temperature when forming a film on a heat-sensitive film (for example, an organic film).
　本発明は、上記事情に鑑みて為されたものであり、被処理体の表面又は被処理体上に蒸着された膜の表面を局所的に所望の温度に調節することができる成膜装置及び成膜方法を提供することを目的とする。 The present invention has been made in view of the above circumstances, and a film forming apparatus capable of locally adjusting a surface of a target object or a surface of a film deposited on the target object to a desired temperature, and An object is to provide a film forming method.
　上述の課題を解決するため、本発明の一側面に係る成膜装置は、被処理体を収容する処理チャンバと、前記被処理体上に膜を蒸着するための蒸着材料及びキャリアガスを含むガスを前記被処理体に噴き付ける第１のノズルと、第１の不活性ガスを前記膜に噴き付ける第２のノズルと、前記第１の不活性ガスの温度を調節する温度調節器とを備える。 In order to solve the above-described problem, a film forming apparatus according to one aspect of the present invention includes a processing chamber for storing a target object, a gas containing a deposition material and a carrier gas for depositing a film on the target object. A first nozzle that sprays the object to be processed, a second nozzle that sprays the first inert gas onto the film, and a temperature controller that adjusts the temperature of the first inert gas. .
　この成膜装置では、温度調節器によって温度調節された第１の不活性ガスが、被処理体上に蒸着された膜に第２のノズルから噴き付けられる。これにより、被処理体の温度変化を抑制しながら、膜の表面を局所的に所望の温度に調節することができる。 In this film forming apparatus, the first inert gas whose temperature is adjusted by the temperature controller is sprayed from the second nozzle onto the film deposited on the object to be processed. Thereby, the surface of a film | membrane can be locally adjusted to desired temperature, suppressing the temperature change of a to-be-processed object.
　本発明の別の一側面に係る成膜装置は、被処理体を収容する処理チャンバと、前記被処理体上に膜を蒸着するための蒸着材料及びキャリアガスを含むガスを前記被処理体に噴き付ける第１のノズルと、前記ガスを前記被処理体に噴き付ける前に、第１の不活性ガスを前記被処理体に噴き付ける第２のノズルと、前記第１の不活性ガスの温度を調節する温度調節器とを備える。 According to another aspect of the present invention, a film forming apparatus includes a processing chamber for storing a target object, and a gas containing a deposition material and a carrier gas for depositing a film on the target target object. A first nozzle for spraying, a second nozzle for spraying a first inert gas on the object to be processed before the gas is sprayed on the object to be processed, and a temperature of the first inert gas And a temperature controller for adjusting the temperature.
　この成膜装置では、温度調節器によって温度調節された第１の不活性ガスが被処理体に第２のノズルから噴き付けられる。これにより、被処理体の表面を局所的に所望の温度に調節することができる。その結果、良好な条件で被処理体上に膜を蒸着することができる。 In this film forming apparatus, the first inert gas whose temperature is adjusted by the temperature controller is sprayed from the second nozzle to the object to be processed. Thereby, the surface of a to-be-processed object can be locally adjusted to desired temperature. As a result, a film can be deposited on the object to be processed under favorable conditions.
　前記第１の不活性ガスには実質的に蒸着材料が添加されていなくてもよい。この場合、被処理体又は膜の表面に意図しない膜が蒸着することを抑制できる。 The vapor deposition material may not be substantially added to the first inert gas. In this case, it is possible to suppress the deposition of an unintended film on the surface of the object to be processed or the film.
　実質的に蒸着材料が添加されていない不活性ガスは、蒸着材料が全く添加されていない不活性ガスだけでなく、膜が蒸着されない程度の微量の蒸着材料が添加された不活性ガスも含む。 The inert gas to which substantially no vapor deposition material is added includes not only an inert gas to which no vapor deposition material is added, but also an inert gas to which a very small amount of vapor deposition material to which no film is deposited is added.
　前記温度調節器が、前記第１の不活性ガスを加熱するヒーターであってもよい。この場合、被処理体又は膜の表面を局所的に加熱することができる。 The heater may be a heater that heats the first inert gas. In this case, the surface of the object to be processed or the film can be locally heated.
　前記温度調節器が、前記第１の不活性ガスを冷却する冷却器であってもよい。この場合、被処理体又は膜の表面を局所的に冷却することができる。 The temperature controller may be a cooler that cools the first inert gas. In this case, the surface of the object to be processed or the film can be locally cooled.
　前記温度調節器が、前記第１の不活性ガスを加熱するヒーターであり、上記成膜装置が、加熱された前記第１の不活性ガスを前記膜に噴き付けた後、第２の不活性ガスを前記膜に噴き付ける第３のノズルと、前記第２の不活性ガスを冷却する冷却器とを更に備えてもよい。 The temperature controller is a heater that heats the first inert gas, and the film forming apparatus sprays the heated first inert gas onto the film, and then a second inert gas. You may further provide the 3rd nozzle which sprays gas on the said film | membrane, and the cooler which cools the said 2nd inert gas.
　この場合、加熱された膜の表面を局所的に冷却することができる。第２の不活性ガスは、第１の不活性ガスと同じでもよいし、異なってもよい。 In this case, the surface of the heated film can be locally cooled. The second inert gas may be the same as or different from the first inert gas.
　前記温度調節器が、前記第１の不活性ガスを加熱するヒーターであり、上記成膜装置が、加熱された前記第１の不活性ガスを前記被処理体に噴き付けた後、前記ガスを前記被処理体に噴き付ける前に、第２の不活性ガスを前記被処理体に噴き付ける第３のノズルと、前記第２の不活性ガスを冷却する冷却器とを更に備えてもよい。 The temperature controller is a heater for heating the first inert gas, and the film forming apparatus sprays the heated first inert gas on the object to be processed, and then the gas is Prior to spraying on the object to be processed, a third nozzle for spraying the second inert gas onto the object to be processed and a cooler for cooling the second inert gas may be further provided.
　この場合、加熱された被処理体の表面を局所的に冷却することができる。その結果、良好な条件で被処理体上に膜を蒸着することができる。 In this case, the surface of the heated object to be processed can be locally cooled. As a result, a film can be deposited on the object to be processed under favorable conditions.
　本発明の一側面に係る成膜方法は、蒸着材料及びキャリアガスを含むガスを被処理体上に噴き付けることによって、前記被処理体上に膜を蒸着する工程と、温度調節された第１の不活性ガスを前記膜に噴き付ける工程とを含む。 A film forming method according to one aspect of the present invention includes a step of depositing a film on a target object by spraying a gas containing a deposition material and a carrier gas on the target object, and a temperature-controlled first. Spraying the inert gas on the film.
　この成膜方法では、温度調節された第１の不活性ガスが、被処理体上に蒸着された膜に噴き付けられる。これにより、被処理体の温度変化を抑制しながら、膜の表面を局所的に所望の温度に調節することができる。 In this film formation method, the temperature-controlled first inert gas is sprayed onto the film deposited on the object to be processed. Thereby, the surface of a film | membrane can be locally adjusted to desired temperature, suppressing the temperature change of a to-be-processed object.
　本発明の別の一側面に係る成膜方法は、温度調節された第１の不活性ガスを被処理体に噴き付ける工程と、前記第１の不活性ガスを被処理体に噴き付けた後、蒸着材料及びキャリアガスを含むガスを前記被処理体上に噴き付けることによって、前記被処理体上に膜を蒸着する工程とを含む。 A film forming method according to another aspect of the present invention includes a step of spraying a temperature-adjusted first inert gas onto a target object, and after spraying the first inert gas onto a target object. And depositing a film on the target object by spraying a gas containing a deposition material and a carrier gas on the target object.
　この成膜方法では、温度調節された第１の不活性ガスが、被処理体に噴き付けられる。これにより、被処理体の表面を局所的に所望の温度に調節することができる。その結果、良好な条件で被処理体上に膜を蒸着することができる。 In this film forming method, the temperature-controlled first inert gas is sprayed on the object to be processed. Thereby, the surface of a to-be-processed object can be locally adjusted to desired temperature. As a result, a film can be deposited on the object to be processed under favorable conditions.
　前記第１の不活性ガスには実質的に蒸着材料が添加されていなくてもよい。この場合、被処理体又は膜の表面に意図しない膜が蒸着することを抑制できる。 The vapor deposition material may not be substantially added to the first inert gas. In this case, it is possible to suppress the deposition of an unintended film on the surface of the object to be processed or the film.
　加熱された前記第１の不活性ガスを前記膜に噴き付けることによって、前記膜を加熱してもよい。この場合、膜の表面を局所的に加熱することができる。 The film may be heated by spraying the heated first inert gas onto the film. In this case, the surface of the film can be locally heated.
　上記成膜方法は、前記膜を加熱した後、冷却された第２の不活性ガスを前記膜に噴き付けることによって、前記膜を冷却する工程を更に含んでもよい。この場合、加熱された膜の表面を局所的に冷却することができる。 The film forming method may further include a step of cooling the film by heating the film and then spraying a cooled second inert gas onto the film. In this case, the surface of the heated film can be locally cooled.
　冷却された前記第１の不活性ガスを前記膜に噴き付けることによって、前記膜を冷却してもよい。この場合、膜の表面を局所的に冷却することができる。 The film may be cooled by spraying the cooled first inert gas onto the film. In this case, the surface of the film can be locally cooled.
　加熱された前記第１の不活性ガスを前記被処理体に噴き付けることによって、前記被処理体を加熱してもよい。この場合、被処理体の表面を局所的に加熱することができる。 The target object may be heated by spraying the heated first inert gas on the target object. In this case, the surface of the object to be processed can be locally heated.
　上記成膜方法は、前記被処理体を加熱した後、冷却された第２の不活性ガスを前記被処理体に噴き付けることによって、前記被処理体を冷却する工程を更に含み、前記被処理体を冷却した後、前記被処理体上に膜を蒸着してもよい。この場合、加熱された被処理体の表面を局所的に冷却することができる。その結果、良好な条件で被処理体上に膜を蒸着することができる。 The film forming method further includes a step of cooling the object to be processed by heating the object to be processed and then spraying a cooled second inert gas onto the object to be processed. After cooling the body, a film may be deposited on the object to be processed. In this case, the surface of the heated object to be processed can be locally cooled. As a result, a film can be deposited on the object to be processed under favorable conditions.
　冷却された前記第１の不活性ガスを前記被処理体に噴き付けることによって、前記被処理体を冷却してもよい。この場合、被処理体の表面を局所的に冷却することができる。 The object to be processed may be cooled by spraying the cooled first inert gas on the object to be processed. In this case, the surface of the object to be processed can be locally cooled.
　本発明によれば、被処理体の表面又は被処理体上に蒸着された膜の表面を局所的に所望の温度に調節することができる成膜装置及び成膜方法が提供される。 According to the present invention, there is provided a film forming apparatus and a film forming method capable of locally adjusting the surface of a target object or the surface of a film deposited on the target object to a desired temperature.
第１実施形態に係る成膜装置を模式的に示す図である。It is a figure which shows typically the film-forming apparatus which concerns on 1st Embodiment. 第１実施形態に係る成膜装置を用いて製造される電子デバイスの一例を模式的に示す図である。It is a figure which shows typically an example of the electronic device manufactured using the film-forming apparatus which concerns on 1st Embodiment. 第１実施形態に係る成膜方法を示すフローチャートである。It is a flowchart which shows the film-forming method which concerns on 1st Embodiment. 第２実施形態に係る成膜装置を模式的に示す図である。It is a figure which shows typically the film-forming apparatus which concerns on 2nd Embodiment. 第３実施形態に係る成膜装置を模式的に示す図である。It is a figure which shows typically the film-forming apparatus which concerns on 3rd Embodiment. 第３実施形態に係る成膜方法を示すフローチャートである。It is a flowchart which shows the film-forming method which concerns on 3rd Embodiment. 第４実施形態に係る成膜装置を模式的に示す図である。It is a figure which shows typically the film-forming apparatus which concerns on 4th Embodiment. 第４実施形態に係る成膜方法を示すフローチャートである。It is a flowchart which shows the film-forming method which concerns on 4th Embodiment. 第５実施形態に係る成膜装置を模式的に示す図である。It is a figure which shows typically the film-forming apparatus which concerns on 5th Embodiment. 第６実施形態に係る成膜装置を模式的に示す図である。It is a figure which shows typically the film-forming apparatus which concerns on 6th Embodiment. 第６実施形態に係る成膜方法を示すフローチャートである。It is a flowchart which shows the film-forming method which concerns on 6th Embodiment. 第７実施形態に係る成膜装置を模式的に示す図である。It is a figure which shows typically the film-forming apparatus which concerns on 7th Embodiment. 第７実施形態に係る成膜装置を用いて製造される電子デバイスの一例を模式的に示す図である。It is a figure which shows typically an example of the electronic device manufactured using the film-forming apparatus which concerns on 7th Embodiment. 第８実施形態に係る成膜装置を模式的に示す図である。It is a figure which shows typically the film-forming apparatus which concerns on 8th Embodiment. 第８実施形態に係る成膜装置を用いて製造される電子デバイスの一例を模式的に示す図である。It is a figure which shows typically an example of the electronic device manufactured using the film-forming apparatus which concerns on 8th Embodiment.
　以下、添付図面を参照しながら本発明の第１～第８実施形態を詳細に説明する。図面の説明において、同一又は同等の要素には同一符号を用い、重複する説明を省略する。 Hereinafter, first to eighth embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same reference numerals are used for the same or equivalent elements, and redundant descriptions are omitted.
＜第１実施形態＞
　図１は、第１実施形態に係る成膜装置を模式的に示す図である。図１には、ＸＹＺ直交座標系が示されている。 <First Embodiment>
FIG. 1 is a diagram schematically showing a film forming apparatus according to the first embodiment. FIG. 1 shows an XYZ orthogonal coordinate system.
　図１に示される成膜装置１０は、被処理体Ｐを収容する処理チャンバ１２を備える。被処理体Ｐの一方の面（成膜面）は例えば鉛直方向（Ｚ方向）において下を向いている。すなわち、成膜装置１０はフェースダウン型の成膜装置である。被処理体Ｐは、例えば、基板Ｓと、基板Ｓ上に形成された電極５２と、電極５２上に形成された膜５６ａとを備える。基板Ｓは、例えばガラス基板等の透明基板である。基板Ｓの形状は、例えば矩形である。電極５２は、例えばＩＴＯ等の透明電極である。処理チャンバ１２には、配管１２ｇを介して真空ポンプ１５が接続されている。真空ポンプ１５により、処理チャンバ１２内を減圧することができる。 The film forming apparatus 10 shown in FIG. 1 includes a processing chamber 12 that accommodates a workpiece P. One surface (film formation surface) of the workpiece P is directed downward in the vertical direction (Z direction), for example. That is, the film forming apparatus 10 is a face-down type film forming apparatus. The workpiece P includes, for example, a substrate S, an electrode 52 formed on the substrate S, and a film 56a formed on the electrode 52. The substrate S is a transparent substrate such as a glass substrate. The shape of the substrate S is, for example, a rectangle. The electrode 52 is a transparent electrode such as ITO. A vacuum pump 15 is connected to the processing chamber 12 via a pipe 12g. The inside of the processing chamber 12 can be depressurized by the vacuum pump 15.
　成膜装置１０は、被処理体Ｐ上に膜５６ｂを蒸着するための蒸着材料及びキャリアガスを含むガスを被処理体Ｐに噴き付けるノズル１６ｂ（第１のノズル）を備える。蒸着材料は、気化した１種類又は複数種類の有機材料であってもよい。キャリアガスとしては、例えばＡｒガス、窒素ガス等の不活性ガスが挙げられる。成膜装置１０は、ノズル１６ｂと同様の構造を有するノズル１６ａ及びノズル１６ｃを備えてもよい。ノズル１６ａは、電極５２上に膜５６ａを蒸着するための蒸着材料及びキャリアガスを電極５２に噴き付ける。ノズル１６ｃは、膜５６ｂ上に膜５６ｃ（図２参照）を蒸着するための蒸着材料及びキャリアガスを膜５６ｂに噴き付ける。ノズル１６ａ～１６ｃは、被処理体Ｐの移動方向（Ｘ方向）に沿ってこの順に配列される。膜５６ａ～膜５６ｃは、例えば有機膜である。 The film forming apparatus 10 includes a nozzle 16b (first nozzle) for spraying a gas containing a deposition material and a carrier gas for depositing the film 56b on the target object P onto the target object P. The vapor deposition material may be one or more kinds of vaporized organic materials. Examples of the carrier gas include inert gases such as Ar gas and nitrogen gas. The film forming apparatus 10 may include a nozzle 16a and a nozzle 16c having the same structure as the nozzle 16b. The nozzle 16 a sprays a deposition material and a carrier gas for depositing the film 56 a on the electrode 52 onto the electrode 52. The nozzle 16c sprays a deposition material and a carrier gas for depositing the film 56c (see FIG. 2) on the film 56b. The nozzles 16a to 16c are arranged in this order along the moving direction (X direction) of the workpiece P. The films 56a to 56c are, for example, organic films.
　ノズル１６ａ～１６ｃには、処理チャンバ１２外に配置された蒸着材料供給源２０ａ～２０ｃがそれぞれ配管１２ａ～１２ｃを介して接続されている。蒸着材料供給源２０ａ～２０ｃでは、互いに異なる蒸着材料が気化する。蒸着材料供給源２０ａ～２０ｃには、例えば固体の有機材料が収容されている。加熱により固体の有機材料が気化する。蒸着材料供給源２０ａ～２０ｃには、それぞれ配管２２ａ～２２ｃを介して不活性ガス供給源２４が接続されている。不活性ガス供給源２４から供給される不活性ガスは、蒸着材料供給源２０ａ～２０ｃにおいて気化された蒸着材料とそれぞれ混合され、処理チャンバ１２内に導入される。これにより、基板Ｓ及び電極５２上に、複数種類の膜５６ａ～５６ｃを連続的に蒸着させることができる。 Vapor deposition material supply sources 20a to 20c disposed outside the processing chamber 12 are connected to the nozzles 16a to 16c via pipes 12a to 12c, respectively. In the vapor deposition material supply sources 20a to 20c, different vapor deposition materials are vaporized. The vapor deposition material supply sources 20a to 20c contain, for example, solid organic materials. Solid organic material is vaporized by heating. An inert gas supply source 24 is connected to the vapor deposition material supply sources 20a to 20c via pipes 22a to 22c, respectively. The inert gas supplied from the inert gas supply source 24 is mixed with the vapor deposition material vaporized in the vapor deposition material supply sources 20a to 20c, and introduced into the processing chamber 12. Thereby, a plurality of types of films 56 a to 56 c can be continuously deposited on the substrate S and the electrode 52.
　ノズル１６ａと蒸着材料供給源２０ａとの間には、配管１２ａの途中に弁２６ａが配置されている。弁２６ａと蒸着材料供給源２０ａとの間には、配管１２ａを接続する接続部２８ａが配置されている。蒸着材料供給源２０ａと不活性ガス供給源２４との間には、配管２２ａの途中に弁３２ａが配置されている。弁３２ａと蒸着材料供給源２０ａとの間には、配管２２ａを接続する接続部３０ａが配置されている。弁３２ａと不活性ガス供給源２４との間には、マスフローコントローラー３４ａが配置されている。同様に、ノズル１６ｂと不活性ガス供給源２４との間には、弁２６ｂ、接続部２８ｂ、接続部３０ｂ、弁３２ｂ及びマスフローコントローラー３４ｂがこの順に配列されている。同様に、ノズル１６ｃと不活性ガス供給源２４との間には、弁２６ｃ、接続部２８ｃ、接続部３０ｃ、弁３２ｃ及びマスフローコントローラー３４ｃがこの順に配列されている。 Between the nozzle 16a and the vapor deposition material supply source 20a, a valve 26a is disposed in the middle of the pipe 12a. A connecting portion 28a for connecting the pipe 12a is disposed between the valve 26a and the vapor deposition material supply source 20a. Between the vapor deposition material supply source 20a and the inert gas supply source 24, a valve 32a is arranged in the middle of the pipe 22a. Between the valve 32a and the vapor deposition material supply source 20a, the connection part 30a which connects the piping 22a is arrange | positioned. A mass flow controller 34 a is disposed between the valve 32 a and the inert gas supply source 24. Similarly, between the nozzle 16b and the inert gas supply source 24, the valve 26b, the connection part 28b, the connection part 30b, the valve 32b, and the mass flow controller 34b are arranged in this order. Similarly, between the nozzle 16c and the inert gas supply source 24, a valve 26c, a connection portion 28c, a connection portion 30c, a valve 32c, and a mass flow controller 34c are arranged in this order.
　成膜装置１０は、不活性ガスＧ１（第１の不活性ガス）を膜５６ｂに噴き付けるノズル１８（第２のノズル）を備える。不活性ガスＧ１は、例えばＡｒガス等の希ガスでもよいし、窒素ガスでもよい。不活性ガスＧ１は、上記キャリアガスと同じでもよいし、異なってもよい。不活性ガスＧ１には、蒸着材料が意図的に添加されなくてもよいし、膜が蒸着されない程度の微量の蒸着材料が微量に添加されてもよい。 The film forming apparatus 10 includes a nozzle 18 (second nozzle) that sprays an inert gas G1 (first inert gas) onto the film 56b. The inert gas G1 may be a rare gas such as Ar gas or nitrogen gas. The inert gas G1 may be the same as or different from the carrier gas. A vapor deposition material may not be intentionally added to the inert gas G1, or a trace amount of a vapor deposition material that does not deposit a film may be added in a trace amount.
　成膜装置１０は、不活性ガスＧ１の温度を調節する温度調節器３６を備える。温度調節器３６は、配管１２ｅを介してノズル１８に接続されている。温度調節器３６には、配管２２ｅを介して不活性ガス供給源２４が接続されている。ノズル１８と温度調節器３６との間には、弁２６ｅ及び接続部２８ｅがこの順に配列されている。温度調節器３６と不活性ガス供給源２４との間には、接続部３０ｅ、弁３２ｅ及びマスフローコントローラー３４ｅがこの順に配列されている。不活性ガス供給源２４から供給される不活性ガスは、温度調節器３６において温度調節され、温度調節された不活性ガスＧ１として処理チャンバ１２内に導入される。 The film forming apparatus 10 includes a temperature controller 36 that adjusts the temperature of the inert gas G1. The temperature controller 36 is connected to the nozzle 18 through the pipe 12e. An inert gas supply source 24 is connected to the temperature controller 36 via a pipe 22e. Between the nozzle 18 and the temperature controller 36, the valve 26e and the connection part 28e are arranged in this order. Between the temperature controller 36 and the inert gas supply source 24, the connection part 30e, the valve 32e, and the mass flow controller 34e are arranged in this order. The temperature of the inert gas supplied from the inert gas supply source 24 is adjusted by the temperature controller 36 and is introduced into the processing chamber 12 as the temperature-controlled inert gas G1.
　ノズル１６ａ～１６ｃの先端には、例えばＹ方向に延びる矩形の開口が形成されている。すなわち、成膜装置１０は、いわゆるリニアソース型の成膜装置である。ノズル１６ａ～１６ｃの開口から蒸着材料及びキャリアガスを含むガスが放出される。ノズル１６ａ～１６ｃの開口上には、蒸着材料を遮断可能なシャッター１７ａ～１７ｃがそれぞれ配置されてもよい。ノズル１８の先端には、例えばＹ方向に延びる矩形の開口が形成されている。ノズル１８の開口から温度調節された不活性ガスＧ１が放出される。ノズル１８の開口上には、不活性ガスＧ１を遮断可能なシャッター１７ｅが配置されてもよい。図１ではシャッター１７ｅが開いているので、ノズル１８の開口から噴き出す不活性ガスＧ１が膜５６ｂの表面に到達する。シャッター１７ａ～１７ｃは閉じているので、ノズル１６ａ～１６ｃの開口から噴き出すガスは膜５６ｂに到達しない。シャッター１７ａ～１７ｃ及び１７ｅは、処理チャンバ１２に接続されており、例えばＹ方向に沿った回転軸を中心に回転する。これにより、シャッター１７ａ～１７ｃ及び１７ｅを、必要に応じてノズル１６ａ～１６ｃ及び１８の開口上に配置したり当該開口上から退避させたりすることができる。 At the tip of the nozzles 16a to 16c, for example, a rectangular opening extending in the Y direction is formed. That is, the film forming apparatus 10 is a so-called linear source type film forming apparatus. A gas containing a deposition material and a carrier gas is released from the openings of the nozzles 16a to 16c. On the openings of the nozzles 16a to 16c, shutters 17a to 17c capable of blocking the vapor deposition material may be disposed, respectively. For example, a rectangular opening extending in the Y direction is formed at the tip of the nozzle 18. The temperature-controlled inert gas G1 is released from the opening of the nozzle 18. A shutter 17e capable of blocking the inert gas G1 may be disposed on the opening of the nozzle 18. In FIG. 1, since the shutter 17e is open, the inert gas G1 ejected from the opening of the nozzle 18 reaches the surface of the film 56b. Since the shutters 17a to 17c are closed, the gas ejected from the openings of the nozzles 16a to 16c does not reach the film 56b. The shutters 17a to 17c and 17e are connected to the processing chamber 12, and rotate around a rotation axis along the Y direction, for example. As a result, the shutters 17a to 17c and 17e can be arranged on the openings of the nozzles 16a to 16c and 18 and can be retracted from the openings as necessary.
　成膜装置１０は、被処理体Ｐを保持するステージ３８をＸ方向に駆動する駆動装置４０を備えてもよい。これにより、ノズル１６ａ～１６ｃ及び１８に対して相対的に被処理体ＰがＸ方向に沿って移動する。矢印Ａはステージ３８の移動方向を示す。Ｘ方向において、ノズル１８は、ノズル１６ｂの後段かつノズル１６ｃの前段に配置されている。したがって、被処理体Ｐは、Ｘ方向に移動することによって、ノズル１６ａ、１６ｂ、１８、１６ｃの開口に順番に対向配置されることとなる。 The film forming apparatus 10 may include a driving device 40 that drives the stage 38 holding the workpiece P in the X direction. As a result, the workpiece P moves in the X direction relative to the nozzles 16a to 16c and 18. An arrow A indicates the moving direction of the stage 38. In the X direction, the nozzle 18 is disposed downstream of the nozzle 16b and upstream of the nozzle 16c. Accordingly, the object P to be processed is disposed so as to face the openings of the nozzles 16a, 16b, 18, 16c in order by moving in the X direction.
　ステージ３８は、被処理体Ｐを保持する静電チャックを内蔵してもよい。ステージ３８は、例えば支持部３８ａによってレール４２に接続されている。レール４２は処理チャンバ１２に接続されている。この場合、駆動装置４０によってステージ３８及び支持部３８ａはレール４２上をスライドするように移動する。被処理体Ｐは、処理チャンバ１２に形成されたゲートバルブ４４ａを通って処理チャンバ１２内に導入可能であり、処理チャンバ１２に形成されたゲートバルブ４４ｂを通って処理チャンバ１２外に搬出可能である。 The stage 38 may incorporate an electrostatic chuck that holds the workpiece P. The stage 38 is connected to the rail 42 by, for example, a support portion 38a. The rail 42 is connected to the processing chamber 12. In this case, the stage 38 and the support portion 38 a are moved by the drive device 40 so as to slide on the rail 42. The workpiece P can be introduced into the processing chamber 12 through a gate valve 44a formed in the processing chamber 12, and can be carried out of the processing chamber 12 through a gate valve 44b formed in the processing chamber 12. is there.
　成膜装置１０では、温度調節器３６によって温度調節された不活性ガスＧ１が、被処理体Ｐ上に蒸着された膜５６ｂにノズル１８から噴き付けられる。これにより、被処理体Ｐの温度変化を抑制しながら、膜５６ｂの表面を局所的に所望の温度に調節することができる。その結果、膜５６ｂの結晶化速度又は膜５６ｃの成膜速度をコントロールすることができる。膜５６ｂの表面においてライン状の領域を所望の温度に調節することができる。ライン状の領域は、例えば回路パターンとして利用可能である。不活性ガスＧ１に実質的に蒸着材料が添加されていない場合には、膜５６ｂの表面に意図しない膜が蒸着することを抑制できる。 In the film forming apparatus 10, the inert gas G <b> 1 whose temperature has been adjusted by the temperature controller 36 is sprayed from the nozzle 18 onto the film 56 b deposited on the workpiece P. Thereby, the surface of the film 56b can be locally adjusted to a desired temperature while suppressing the temperature change of the workpiece P. As a result, the crystallization speed of the film 56b or the film formation speed of the film 56c can be controlled. The linear region on the surface of the film 56b can be adjusted to a desired temperature. The line-shaped region can be used as a circuit pattern, for example. When the vapor deposition material is not substantially added to the inert gas G1, it is possible to suppress the deposition of an unintended film on the surface of the film 56b.
　温度調節器３６は、不活性ガスＧ１を加熱するヒーターであってもよい。この場合、膜５６ｂの表面を局所的に加熱することができる。例えば、膜５６ｂがアモルファス膜の場合、膜５６ｂの表面をアニール処理することによって結晶化を促進することができる。加熱によって、結晶化の際に核となりうる物質又は水分を除去することができるので、結晶粒界の少ない結晶からなる膜５６ｂを形成することができる。このような膜５６ｂは、高い移動度が求められるデバイス（例えば有機トランジスタ等）において有効である。膜５６ｂの表面を所望の温度に加熱することにより、良好な条件で膜５６ｂ上に膜５６ｃを蒸着することができる。膜５６ｂにドーパントが含まれている場合、膜５６ｂの表面を加熱することによって当該ドーパントの拡散を制御することができる。膜５６ｂ上に膜５６ｃが蒸着される場合には、良好な条件で膜５６ｂ上に膜５６ｃを蒸着することができる。不活性ガスＧ１の温度は、例えば３００～４００Ｋに調節される。被処理体Ｐ全体が加熱されるわけではないので、被処理体Ｐ中の基板Ｓ、電極５２、膜５６ａ等がダメージを受け難い。 The temperature controller 36 may be a heater that heats the inert gas G1. In this case, the surface of the film 56b can be locally heated. For example, when the film 56b is an amorphous film, crystallization can be promoted by annealing the surface of the film 56b. By heating, a substance or moisture that can be a nucleus in crystallization can be removed, so that a film 56b made of crystals with few crystal grain boundaries can be formed. Such a film 56b is effective in a device that requires high mobility (for example, an organic transistor). By heating the surface of the film 56b to a desired temperature, the film 56c can be deposited on the film 56b under favorable conditions. In the case where a dopant is contained in the film 56b, diffusion of the dopant can be controlled by heating the surface of the film 56b. In the case where the film 56c is deposited on the film 56b, the film 56c can be deposited on the film 56b under favorable conditions. The temperature of the inert gas G1 is adjusted to 300 to 400K, for example. Since the entire object to be processed P is not heated, the substrate S, the electrode 52, the film 56a, etc. in the object to be processed P are hardly damaged.
　温度調節器３６は、不活性ガスＧ１を冷却する冷却器であってもよい。この場合、膜５６ｂの表面を局所的に冷却することができる。膜５６ｂの表面を所望の温度に冷却することにより、良好な条件で膜５６ｂ上に膜５６ｃを蒸着することができる。 The temperature controller 36 may be a cooler that cools the inert gas G1. In this case, the surface of the film 56b can be locally cooled. By cooling the surface of the film 56b to a desired temperature, the film 56c can be deposited on the film 56b under favorable conditions.
　図２は、第１実施形態に係る成膜装置を用いて製造される電子デバイスの一例を模式的に示す図である。図２に示される電子デバイス５０は、例えば有機ＥＬ素子である。電子デバイス５０は、基板Ｓ上に形成された電極５２（陽極）と電極５４（陰極）とを備えている。電極５２と電極５４との間には、発光層５６が設けられている。発光層５６は、例えば有機膜等の膜５６ａ～５６ｃを備えている。膜５６ａ～５６ｃは、電極５２から電極５４に向かってこの順に設けられている。電極５２と電極５４との間には、配線を介して電源５８が接続されている。電源５８により電流が発光層５６に注入されると、発光層５６から放出された光６０が電極５２及び基板Ｓを通過して外部に放出される。 FIG. 2 is a diagram schematically illustrating an example of an electronic device manufactured using the film forming apparatus according to the first embodiment. The electronic device 50 shown in FIG. 2 is, for example, an organic EL element. The electronic device 50 includes an electrode 52 (anode) and an electrode 54 (cathode) formed on the substrate S. A light emitting layer 56 is provided between the electrode 52 and the electrode 54. The light emitting layer 56 includes films 56a to 56c such as organic films. The films 56a to 56c are provided in this order from the electrode 52 to the electrode 54. A power source 58 is connected between the electrode 52 and the electrode 54 via wiring. When a current is injected into the light emitting layer 56 by the power source 58, the light 60 emitted from the light emitting layer 56 passes through the electrode 52 and the substrate S and is emitted to the outside.
　膜５６ａ～５６ｃは、成膜装置１０により形成可能である。この場合、これら３層を形成するための３種類の蒸着材料をノズル１６ａ～１６ｃからそれぞれ供給する。成膜装置１０を用いると膜５６ｂの表面を局所的に所望の温度に調節することができるので、良好な特性を有する電子デバイス５０を製造することができる。 The films 56a to 56c can be formed by the film forming apparatus 10. In this case, three kinds of vapor deposition materials for forming these three layers are supplied from the nozzles 16a to 16c, respectively. When the film forming apparatus 10 is used, the surface of the film 56b can be locally adjusted to a desired temperature, so that the electronic device 50 having good characteristics can be manufactured.
　電子デバイス５０は、例えば半導体デバイス、太陽電池、光デバイス等であってもよい。 The electronic device 50 may be, for example, a semiconductor device, a solar cell, an optical device, or the like.
　図３は、第１実施形態に係る成膜方法を示すフローチャートである。本実施形態に係る成膜方法は、上述の成膜装置１０を用いて以下のように実施可能である。 FIG. 3 is a flowchart showing the film forming method according to the first embodiment. The film forming method according to the present embodiment can be performed as follows using the film forming apparatus 10 described above.
（膜５６ａの成膜）
　まず、必要に応じて、膜５６ａを蒸着するための蒸着材料及びキャリアガスを含むガスを基板Ｓ上の電極５２に噴き付けることによって、電極５２上に膜５６ａを蒸着する（工程Ｓ１）。この時、基板Ｓ及び電極５２は、ノズル１６ａの開口に対向配置される。 (Deposition of the film 56a)
First, as necessary, a film 56a is deposited on the electrode 52 by spraying a gas containing a deposition material and a carrier gas for depositing the film 56a onto the electrode 52 on the substrate S (step S1). At this time, the substrate S and the electrode 52 are disposed to face the opening of the nozzle 16a.
（膜５６ｂの成膜）
　次に、膜５６ｂを蒸着するための蒸着材料及びキャリアガスを含むガスを被処理体Ｐ上に噴き付けることによって、被処理体Ｐ上に膜５６ｂを蒸着する（工程Ｓ２）。この時、基板Ｓ、電極５２及び膜５６ａは、ノズル１６ｂの開口に対向配置される。 (Deposition of the film 56b)
Next, the film 56b is vapor-deposited on the to-be-processed object P by spraying the gas containing the vapor deposition material and carrier gas for vapor-depositing the film 56b on the to-be-processed object P (process S2). At this time, the substrate S, the electrode 52, and the film 56a are disposed to face the opening of the nozzle 16b.
（加熱された不活性ガスＧ１の噴き付け）
　次に、加熱された不活性ガスＧ１を膜５６ｂに噴き付ける（工程Ｓ３）。この時、被処理体Ｐは、ノズル１８の開口に対向配置される（図１参照）。 (Blowing of heated inert gas G1)
Next, the heated inert gas G1 is sprayed onto the film 56b (step S3). At this time, the workpiece P is disposed opposite to the opening of the nozzle 18 (see FIG. 1).
（膜５６ｃの成膜）
　次に、必要に応じて、膜５６ｃを蒸着するための蒸着材料及びキャリアガスを含むガスを膜５６ｂに噴き付けることによって、膜５６ｂ上に膜５６ｃを蒸着する（工程Ｓ４）。この時、被処理体Ｐ及び膜５６ｃは、ノズル１６ｃの開口に対向配置される。 (Deposition of the film 56c)
Next, if necessary, a film 56c is deposited on the film 56b by spraying a gas containing a deposition material and a carrier gas for depositing the film 56c onto the film 56b (Step S4). At this time, the object to be processed P and the film 56c are disposed to face the opening of the nozzle 16c.
　本実施形態の成膜方法では、工程Ｓ２において、加熱された不活性ガスＧ１が、被処理体Ｐ上に蒸着された膜５６ｂに噴き付けられる。これにより、被処理体Ｐの温度上昇を抑制しながら、膜５６ｂの表面を局所的に所望の温度に加熱することができる。 In the film forming method of the present embodiment, the heated inert gas G1 is sprayed onto the film 56b deposited on the workpiece P in step S2. Thereby, the surface of the film 56b can be locally heated to a desired temperature while suppressing the temperature rise of the workpiece P.
　工程Ｓ３において、加熱された不活性ガスＧ１に代えて冷却された不活性ガスＧ１を膜５６ｂに噴き付けることによって、膜５６ｂを冷却してもよい。この場合、被処理体Ｐの温度降下を抑制しながら、膜５６ｂの表面を局所的に所望の温度に冷却することができる。 In step S3, the film 56b may be cooled by spraying a cooled inert gas G1 on the film 56b instead of the heated inert gas G1. In this case, the surface of the film 56b can be locally cooled to a desired temperature while suppressing the temperature drop of the workpiece P.
＜第２実施形態＞
　図４は、第２実施形態に係る成膜装置を模式的に示す図である。図４に示される成膜装置１０Ａは、ノズル１８とノズル１６ｃとの間隔Ｄ２がノズル１８とノズル１６ｂとの間隔Ｄ１よりも広くなっていること以外は成膜装置１０と同一の構成を備えている。成膜装置１０Ａでは、少なくとも成膜装置１０と同様の作用効果が得られる。成膜装置１０に代えて成膜装置１０Ａを用いて、上記第１実施形態に係る成膜方法と同様に、第２実施形態に係る成膜方法を実施することもできる。成膜装置１０Ａでは、温度調節器３６が不活性ガスＧ１を加熱するヒーターである場合、間隔Ｄ２を間隔Ｄ１よりも広くすることによって、加熱された膜５６ｂを十分に冷却することができる。そのため、膜５６ｂの表面を所望の温度まで冷却した後に、膜５６ｂ上に膜５６ｃを蒸着することができる。例えば、間隔Ｄ２を適宜調整することによって、膜５６ｂの結晶化速度をコントロールすることができる。 <Second Embodiment>
FIG. 4 is a diagram schematically showing a film forming apparatus according to the second embodiment. The film forming apparatus 10A shown in FIG. 4 has the same configuration as the film forming apparatus 10 except that the distance D2 between the nozzle 18 and the nozzle 16c is larger than the distance D1 between the nozzle 18 and the nozzle 16b. Yes. In the film forming apparatus 10A, at least the same effects as the film forming apparatus 10 can be obtained. The film forming method according to the second embodiment can be carried out by using the film forming device 10A instead of the film forming device 10 in the same manner as the film forming method according to the first embodiment. In the film forming apparatus 10A, when the temperature controller 36 is a heater that heats the inert gas G1, the heated film 56b can be sufficiently cooled by making the distance D2 wider than the distance D1. Therefore, after cooling the surface of the film 56b to a desired temperature, the film 56c can be deposited on the film 56b. For example, the crystallization speed of the film 56b can be controlled by appropriately adjusting the distance D2.
＜第３実施形態＞
　図５は、第３実施形態に係る成膜装置を模式的に示す図である。図５に示される成膜装置１０Ｂの温度調節器３６は、不活性ガスＧ１を加熱するヒーターである。成膜装置１０Ｂは、加熱された不活性ガスＧ１を膜５６ｂに噴き付けた後、不活性ガスＧ２（第２の不活性ガス）を膜５６ｂに噴き付けるノズル１８ａ（第３のノズル）と、不活性ガスＧ２を冷却する冷却器３６ａとを備える。冷却器３６ａは、配管１２ｆを介してノズル１８ａに接続されている。冷却器３６ａには、配管２２ｆを介して不活性ガス供給源２４が接続されている。ノズル１８ａと冷却器３６ａとの間には、弁２６ｆ及び接続部２８ｆがこの順に配列されている。冷却器３６ａと不活性ガス供給源２４との間には、接続部３０ｆ、弁３２ｆ及びマスフローコントローラー３４ｆがこの順に配列されている。不活性ガス供給源２４から供給される不活性ガスは、冷却器３６ａにおいて冷却され、不活性ガスＧ２として処理チャンバ１２内に導入される。ノズル１８ａの開口上には、不活性ガスＧ２を遮断可能なシャッター１７ｆが配置されてもよい。 <Third Embodiment>
FIG. 5 is a diagram schematically showing a film forming apparatus according to the third embodiment. The temperature controller 36 of the film forming apparatus 10B shown in FIG. 5 is a heater that heats the inert gas G1. The film forming apparatus 10B includes a nozzle 18a (third nozzle) that sprays an inert gas G2 (second inert gas) onto the film 56b after the heated inert gas G1 is sprayed onto the film 56b. And a cooler 36a for cooling the inert gas G2. The cooler 36a is connected to the nozzle 18a via the pipe 12f. An inert gas supply source 24 is connected to the cooler 36a via a pipe 22f. Between the nozzle 18a and the cooler 36a, the valve 26f and the connection part 28f are arranged in this order. Between the cooler 36a and the inert gas supply source 24, a connecting portion 30f, a valve 32f, and a mass flow controller 34f are arranged in this order. The inert gas supplied from the inert gas supply source 24 is cooled in the cooler 36a, and is introduced into the processing chamber 12 as the inert gas G2. A shutter 17f capable of blocking the inert gas G2 may be disposed on the opening of the nozzle 18a.
　成膜装置１０Ｂは、上記構成以外は成膜装置１０と同一の構成を備えている。成膜装置１０Ｂでは、少なくとも成膜装置１０と同様の作用効果が得られる。成膜装置１０Ｂでは、ノズル１８ａから噴射される不活性ガスＧ２によって、加熱された膜５６ｂの表面を局所的に冷却することができる。成膜装置１０Ｂでは、成膜装置１０Ａと同様の作用効果が得られる。成膜装置１０Ｂでは、不活性ガスＧ１によって膜５６ｂの表面が加熱された後、不活性ガスＧ２によって膜５６ｂの表面が急冷（クエンチ）されるので、リフローにより膜５６ｂの表面を平坦化することができる。 The film forming apparatus 10B has the same configuration as the film forming apparatus 10 except for the above configuration. In the film forming apparatus 10B, at least the same effects as the film forming apparatus 10 can be obtained. In the film forming apparatus 10B, the surface of the heated film 56b can be locally cooled by the inert gas G2 injected from the nozzle 18a. In the film forming apparatus 10B, the same effect as the film forming apparatus 10A can be obtained. In the film forming apparatus 10B, after the surface of the film 56b is heated by the inert gas G1, the surface of the film 56b is quenched (quenched) by the inert gas G2, so that the surface of the film 56b is flattened by reflow. Can do.
　図６は、第３実施形態に係る成膜方法を示すフローチャートである。本実施形態に係る成膜方法は、上述の成膜装置１０Ｂを用いて実施可能である。本実施形態に係る成膜方法は、図３の工程Ｓ３と工程Ｓ４との間に、冷却された不活性ガスＧ２を膜５６ｂに噴き付けることによって、膜５６ｂを冷却する工程Ｓ３ａを更に含む。このため、工程Ｓ３において加熱された膜５６ｂの表面を、工程Ｓ３ａにおいて局所的に冷却することができる。 FIG. 6 is a flowchart showing a film forming method according to the third embodiment. The film forming method according to the present embodiment can be performed using the above-described film forming apparatus 10B. The film forming method according to the present embodiment further includes a step S3a for cooling the film 56b by spraying the cooled inert gas G2 onto the film 56b between the step S3 and the step S4 in FIG. For this reason, the surface of the film 56b heated in the step S3 can be locally cooled in the step S3a.
＜第４実施形態＞
　図７は、第４実施形態に係る成膜装置を模式的に示す図である。図７に示される成膜装置１０Ｃは、ノズル１６ａ、１６ｂ及び１８の配列順序が異なっていること以外は成膜装置１０と同一の構成を備えている。成膜装置１０Ｃでは、Ｘ方向において、ノズル１８がノズル１６ａの前段に配置されている。したがって、成膜装置１０Ｃは、被処理体Ｐ１上に膜５６ａを蒸着するための蒸着材料及びキャリアガスを含むガスを被処理体Ｐ１に噴き付けるノズル１６ａ（第１のノズル）と、ノズル１６ａからガスを被処理体Ｐ１に噴き付ける前に、不活性ガスＧ１を被処理体Ｐ１に噴き付けるノズル１８（第２のノズル）とを備える。被処理体Ｐ１は、基板Ｓ及び電極５２を備える。 <Fourth embodiment>
FIG. 7 is a diagram schematically showing a film forming apparatus according to the fourth embodiment. The film forming apparatus 10C shown in FIG. 7 has the same configuration as the film forming apparatus 10 except that the arrangement order of the nozzles 16a, 16b and 18 is different. In the film forming apparatus 10C, the nozzle 18 is arranged in front of the nozzle 16a in the X direction. Accordingly, the film forming apparatus 10C includes a nozzle 16a (first nozzle) for spraying a gas containing a deposition material and a carrier gas for depositing the film 56a on the target object P1, and the nozzle 16a. A nozzle 18 (second nozzle) for spraying an inert gas G1 onto the object to be treated P1 before the gas is sprayed onto the object to be treated P1 is provided. The object P1 includes a substrate S and an electrode 52.
　成膜装置１０Ｃでは、温度調節器３６によって温度調節された不活性ガスＧ１が被処理体Ｐ１にノズル１８から噴き付けられる。これにより、被処理体Ｐ１の表面を局所的に所望の温度に調節することができる。その結果、良好な条件で被処理体Ｐ１上に膜５６ａを蒸着することができる。さらに、膜５６ａの結晶化速度をコントロールすることができる。不活性ガスＧ１に実質的に蒸着材料が添加されていない場合には、被処理体Ｐ１の表面に意図しない膜が蒸着することを抑制できる。 In the film forming apparatus 10C, the inert gas G1 whose temperature has been adjusted by the temperature controller 36 is sprayed from the nozzle 18 onto the object P1. Thereby, the surface of the to-be-processed object P1 can be locally adjusted to desired temperature. As a result, the film 56a can be deposited on the workpiece P1 under favorable conditions. Furthermore, the crystallization speed of the film 56a can be controlled. When the vapor deposition material is not substantially added to the inert gas G1, it is possible to suppress the deposition of an unintended film on the surface of the object P1.
　温度調節器３６が不活性ガスＧ１を加熱するヒーターである場合、被処理体Ｐ１の表面を局所的に加熱することができる。例えば、被処理体Ｐ１の表面に異物が付着している場合、被処理体Ｐ１の表面を加熱することによって異物を気化させ、被処理体Ｐ１の表面をクリーニングすることができる。被処理体Ｐ１の表面を所望の温度に加熱することにより、良好な条件で被処理体Ｐ１上に膜５６ａを蒸着することができる。 When the temperature controller 36 is a heater that heats the inert gas G1, the surface of the object P1 can be locally heated. For example, when a foreign substance adheres to the surface of the target object P1, the surface of the target object P1 can be cleaned by heating the surface of the target object P1 to vaporize the foreign substance. By heating the surface of the target object P1 to a desired temperature, the film 56a can be deposited on the target object P1 under favorable conditions.
　温度調節器３６が不活性ガスＧ１を冷却する冷却器である場合、被処理体Ｐ１の表面を局所的に冷却することができる。被処理体Ｐ１の表面を所望の温度に冷却することにより、良好な条件で被処理体Ｐ１上に膜５６ａを蒸着することができる。 When the temperature controller 36 is a cooler that cools the inert gas G1, the surface of the workpiece P1 can be locally cooled. By cooling the surface of the object P1 to a desired temperature, the film 56a can be deposited on the object P1 under favorable conditions.
　図８は、第４実施形態に係る成膜方法を示すフローチャートである。本実施形態に係る成膜方法は、上述の成膜装置１０Ｃを用いて実施可能である。本実施形態に係る成膜方法では、工程Ｓ３を工程Ｓ１の前に行う。この方法では、工程Ｓ３において、加熱された不活性ガスＧ１が、被処理体Ｐ１に噴き付けられる。これにより、被処理体Ｐ１の表面を局所的に所望の温度に加熱することができる。その結果、良好な条件で被処理体Ｐ１上に膜５６ａを蒸着することができる。 FIG. 8 is a flowchart showing a film forming method according to the fourth embodiment. The film forming method according to the present embodiment can be performed using the above-described film forming apparatus 10C. In the film forming method according to the present embodiment, step S3 is performed before step S1. In this method, in step S3, the heated inert gas G1 is sprayed onto the workpiece P1. Thereby, the surface of the to-be-processed object P1 can be heated locally to desired temperature. As a result, the film 56a can be deposited on the workpiece P1 under favorable conditions.
　工程Ｓ３において、加熱された不活性ガスＧ１に代えて冷却された不活性ガスＧ１を被処理体Ｐ１に噴き付けることによって、被処理体Ｐ１を冷却してもよい。この場合、被処理体Ｐ１の表面を局所的に所望の温度に冷却することができる。 In step S3, the object P1 may be cooled by spraying the object P1 with the cooled inert gas G1 instead of the heated inert gas G1. In this case, the surface of the workpiece P1 can be locally cooled to a desired temperature.
＜第５実施形態＞
　図９は、第５実施形態に係る成膜装置を模式的に示す図である。図９に示される成膜装置１０Ｄは、ノズル１８とノズル１６ａとの間隔Ｄ４がノズル１６ａとノズル１６ｂとの間隔Ｄ３よりも広くなっていること以外は成膜装置１０Ｃと同一の構成を備えている。成膜装置１０Ｄでは、少なくとも成膜装置１０Ｃと同様の作用効果が得られる。成膜装置１０Ｃに代えて成膜装置１０Ｄを用いて、上記第４実施形態に係る成膜方法と同様に、第５実施形態に係る成膜方法を実施することもできる。成膜装置１０Ｄでは、温度調節器３６が不活性ガスＧ１を加熱するヒーターである場合、間隔Ｄ４を間隔Ｄ３よりも広くすることによって、加熱された被処理体Ｐ１を十分に冷却することができる。そのため、被処理体Ｐ１の表面を所望の温度まで冷却した後に、被処理体Ｐ１上に膜５６ａを蒸着することができる。 <Fifth Embodiment>
FIG. 9 is a diagram schematically showing a film forming apparatus according to the fifth embodiment. The film forming apparatus 10D shown in FIG. 9 has the same configuration as the film forming apparatus 10C except that the distance D4 between the nozzle 18 and the nozzle 16a is wider than the distance D3 between the nozzle 16a and the nozzle 16b. Yes. The film forming apparatus 10D can obtain at least the same effects as the film forming apparatus 10C. The film forming method according to the fifth embodiment can be performed in the same manner as the film forming method according to the fourth embodiment, using the film forming device 10D instead of the film forming device 10C. In the film forming apparatus 10D, when the temperature controller 36 is a heater that heats the inert gas G1, the heated object P1 can be sufficiently cooled by making the interval D4 wider than the interval D3. . Therefore, the film 56a can be deposited on the target object P1 after the surface of the target object P1 is cooled to a desired temperature.
＜第６実施形態＞
　図１０は、第６実施形態に係る成膜装置を模式的に示す図である。図１０に示される成膜装置１０Ｅの温度調節器３６は、不活性ガスＧ１を加熱するヒーターである。成膜装置１０Ｅは、加熱された不活性ガスＧ１を被処理体Ｐ１に噴き付けた後、ノズル１６ａからガスを被処理体Ｐ１に噴き付ける前に、不活性ガスＧ２を膜５６ｂに噴き付けるノズル１８ａと、不活性ガスＧ２を冷却する冷却器３６ａとを備える。 <Sixth Embodiment>
FIG. 10 is a diagram schematically showing a film forming apparatus according to the sixth embodiment. The temperature controller 36 of the film forming apparatus 10E shown in FIG. 10 is a heater that heats the inert gas G1. The film forming apparatus 10E is a nozzle that sprays the inert gas G2 onto the film 56b after spraying the heated inert gas G1 onto the target object P1 and before spraying the gas from the nozzle 16a onto the target object P1. 18a and a cooler 36a for cooling the inert gas G2.
　成膜装置１０Ｅは、上記構成以外は成膜装置１０Ｃと同一の構成を備えている。成膜装置１０Ｅでは、少なくとも成膜装置１０Ｃと同様の作用効果が得られる。成膜装置１０Ｅでは、所望の温度に加熱された被処理体Ｐ１の表面を局所的に冷却することができる。成膜装置１０Ｅでは、成膜装置１０Ｅの各構成によって、他の実施形態と同様の作用効果が得られる。 The film forming apparatus 10E has the same configuration as the film forming apparatus 10C except for the above configuration. The film forming apparatus 10E can obtain at least the same effects as the film forming apparatus 10C. In the film forming apparatus 10E, the surface of the object P1 heated to a desired temperature can be locally cooled. In the film forming apparatus 10E, the same effects as those of the other embodiments can be obtained by the respective configurations of the film forming apparatus 10E.
　図１１は、第６実施形態に係る成膜方法を示すフローチャートである。本実施形態に係る成膜方法は、上述の成膜装置１０Ｅを用いて実施可能である。本実施形態に係る成膜方法は、図８の工程Ｓ３と工程Ｓ１との間において、冷却された不活性ガスＧ２を被処理体Ｐ１に噴き付けることによって、被処理体Ｐ１を冷却する工程Ｓ３ａを更に含む。これにより、工程Ｓ３において加熱された被処理体Ｐ１の表面を、工程Ｓ３ａにおいて局所的に冷却することができる。良好な条件で被処理体Ｐ１上に膜５６ａを蒸着することができる。 FIG. 11 is a flowchart showing a film forming method according to the sixth embodiment. The film forming method according to the present embodiment can be performed using the above-described film forming apparatus 10E. In the film forming method according to the present embodiment, a process S3a for cooling the object to be processed P1 by spraying the cooled inert gas G2 onto the object to be processed P1 between the processes S3 and S1 in FIG. Is further included. Thereby, the surface of the to-be-processed object P1 heated in process S3 can be cooled locally in process S3a. The film 56a can be deposited on the workpiece P1 under good conditions.
＜第７実施形態＞
　図１２は、第７実施形態に係る成膜装置を模式的に示す図である。図１２に示される成膜装置１０Ｆは、膜５６ｃ上に膜５６ｄ（図１３参照）を蒸着するための蒸着材料及びキャリアガスを含むガスを膜５６ｃに噴き付けるノズル１６ｄを備える。他のノズル１６ａ～１６ｃと同様に、ノズル１６ｄには、処理チャンバ１２外に配置された蒸着材料供給源２０ｄが配管１２ｄを介して接続されている。蒸着材料供給源２０ｄには、配管２２ｄを介して不活性ガス供給源２４が接続されている。ノズル１６ｄと不活性ガス供給源２４との間には、弁２６ｄ、接続部２８ｄ、接続部３０ｄ、弁３２ｄ及びマスフローコントローラー３４ｄがこの順に配列されている。 <Seventh embodiment>
FIG. 12 is a diagram schematically showing a film forming apparatus according to the seventh embodiment. A film forming apparatus 10F shown in FIG. 12 includes a nozzle 16d that sprays a gas containing a deposition material and a carrier gas for depositing a film 56d (see FIG. 13) on the film 56c onto the film 56c. Similarly to the other nozzles 16a to 16c, a vapor deposition material supply source 20d disposed outside the processing chamber 12 is connected to the nozzle 16d via a pipe 12d. An inert gas supply source 24 is connected to the vapor deposition material supply source 20d through a pipe 22d. Between the nozzle 16d and the inert gas supply source 24, a valve 26d, a connection portion 28d, a connection portion 30d, a valve 32d, and a mass flow controller 34d are arranged in this order.
　成膜装置１０Ｆは、上記構成以外は成膜装置１０と同一の構成を備えている。成膜装置１０Ｆでは、少なくとも成膜装置１０と同様の作用効果が得られる。成膜装置１０Ｆでは、成膜装置１０Ｆの各構成によって、他の実施形態と同様の作用効果が得られる。 The film forming apparatus 10F has the same configuration as the film forming apparatus 10 except for the above configuration. In the film forming apparatus 10F, at least the same effects as the film forming apparatus 10 can be obtained. In the film forming apparatus 10F, the same effects as those of the other embodiments can be obtained by the components of the film forming apparatus 10F.
　図１３は、第７実施形態に係る成膜装置を用いて製造される電子デバイスの一例を模式的に示す図である。図１３に示される太陽電池５０Ａは、基板Ｓ上に順に設けられた電極５２ａ及び５２ｂ、膜５６ａ～５６ｄ、電極５４を備える。 FIG. 13 is a diagram schematically illustrating an example of an electronic device manufactured using the film forming apparatus according to the seventh embodiment. A solar cell 50A shown in FIG. 13 includes electrodes 52a and 52b, films 56a to 56d, and an electrode 54 provided in this order on a substrate S.
　太陽電池５０Ａの一実施例の構成を以下に示す。
基板Ｓ：ガラス基板
電極５２ａ：ＩＴＯ膜（厚さ１００ｎｍ）
電極５２ｂ：ＭｏＯ３膜（厚さ１３ｎｍ）
膜５６ａ：ＣｌＡｌＰｃ膜（厚さ１３ｎｍ）
膜５６ｂ：ＣｌＡｌＰｃ及びＣ７０からなる共蒸着膜（厚さ１３ｎｍ）
膜５６ｃ：Ｃ６０膜（厚さ２２ｎｍ）
膜５６ｄ：ＢＣＰ膜（厚さ１０ｎｍ）
電極５４；Ａｇ膜（厚さ１００ｎｍ） The configuration of one embodiment of the solar cell 50A is shown below.
Substrate S: Glass substrate electrode 52a: ITO film (thickness 100 nm)
Electrode 52b: MoO 3 film (thickness 13 nm)
Film 56a: ClAlPc film (thickness 13 nm)
Film 56b: Co-deposited film (thickness 13 nm) made of ClAlPc and C70
Film 56c: C60 film (thickness 22 nm)
Film 56d: BCP film (thickness 10 nm)
Electrode 54; Ag film (100 nm thickness)
　膜５６ａ～５６ｄは、成膜装置１０Ｆにより形成可能である。この場合、これら４層を形成するための４種類の蒸着材料をノズル１６ａ～１６ｄからそれぞれ供給する。成膜装置１０Ｆを用いると膜５６ｂの表面を局所的に所望の温度に調節することができるので、良好な特性を有する太陽電池５０Ａを製造することができる。膜５６ｂはホール及びキャリアを生成する層であるため、高い移動度が求められる。高い移動度を得るためには、ＣｌＡｌＰｃが結晶、Ｃ７０（フラーレン）がアモルファスであることが望ましい。膜５６ｂの表面を局所的に特定の温度に調節することによって、高い移動度の膜５６ｂを得ることができる。膜５６ｄはホールブロック層として機能する有機膜である。電極５２ｂ、膜５６ａ～５６ｄのうち少なくとも１つに不活性ガスＧ１を噴き付けることによって、その表面を所望の温度に調節することができる。 The films 56a to 56d can be formed by the film forming apparatus 10F. In this case, four types of vapor deposition materials for forming these four layers are supplied from the nozzles 16a to 16d, respectively. When the film formation apparatus 10F is used, the surface of the film 56b can be locally adjusted to a desired temperature, so that a solar cell 50A having good characteristics can be manufactured. Since the film 56b is a layer that generates holes and carriers, high mobility is required. In order to obtain high mobility, it is desirable that ClAlPc is crystalline and C70 (fullerene) is amorphous. By adjusting the surface of the film 56b locally to a specific temperature, the film 56b with high mobility can be obtained. The film 56d is an organic film that functions as a hole block layer. By spraying an inert gas G1 onto at least one of the electrode 52b and the films 56a to 56d, the surface thereof can be adjusted to a desired temperature.
＜第８実施形態＞
　図１４は、第８実施形態に係る成膜装置を模式的に示す図である。図１４に示される成膜装置１０Ｇは、ノズル１６ａ及び１６ｃ、及びそれらに関連する構成を備えないこと以外は成膜装置１０Ｂと同様の構成を備えている。成膜装置１０Ｇでは、ノズル１６ｂが、被処理体Ｐ２上に膜５６ｂを蒸着するための蒸着材料及びキャリアガスを含むガスを被処理体Ｐ２に噴き付ける。ノズル１８は、加熱された不活性ガスＧ１を膜５６ｂに噴き付ける。ノズル１８ａは、冷却された不活性ガスＧ２を膜５６ｂに噴き付ける。本実施形態において、膜５６ｂはガラス転移温度の低い有機半導体膜である。有機半導体膜に含有される有機半導体材料としては、例えばアルキルベンゾチエノベンゾチオフェン（Ｃｎ－ＢＴＢＴ）等が挙げられる。 <Eighth Embodiment>
FIG. 14 is a diagram schematically showing a film forming apparatus according to the eighth embodiment. A film forming apparatus 10G shown in FIG. 14 has the same configuration as that of the film forming apparatus 10B except that the nozzles 16a and 16c and the related configuration are not provided. In the film forming apparatus 10G, the nozzle 16b sprays a gas including a deposition material and a carrier gas for depositing the film 56b on the target object P2 to the target object P2. The nozzle 18 sprays the heated inert gas G1 onto the film 56b. The nozzle 18a sprays the cooled inert gas G2 onto the film 56b. In the present embodiment, the film 56b is an organic semiconductor film having a low glass transition temperature. Examples of the organic semiconductor material contained in the organic semiconductor film include alkylbenzothienobenzothiophene (Cn-BTBT).
　成膜装置１０Ｇは、ノズル１８ａ及びそれに関連する構成も備えなくてもよい。その場合、自然冷却により膜５６ｂを冷却することができる。 The film forming apparatus 10G may not include the nozzle 18a and the configuration related thereto. In that case, the film 56b can be cooled by natural cooling.
　成膜装置１０Ｇでは、ノズル１８から噴射される不活性ガスＧ１によって、膜５６ｂの表面を局所的に加熱することができる。これにより、膜５６ｂが流動化又は液化する。その結果、流動化又は液化した有機半導体材料が、表面張力により被処理体Ｐ２上に濡れ広がる。よって、凹凸の少ない表面を有する膜５６ｂが得られる。被処理体Ｐ２がトレンチを有する場合であっても、被処理体Ｐ２に対する膜５６ｂのカバレッジ性を向上させることができる。膜５６ｂは、真空雰囲気下又は不活性ガス雰囲気下で加熱されるので、例えば酸化等の化学反応が抑制される。 In the film forming apparatus 10G, the surface of the film 56b can be locally heated by the inert gas G1 ejected from the nozzle 18. Thereby, the membrane 56b is fluidized or liquefied. As a result, the fluidized or liquefied organic semiconductor material wets and spreads on the workpiece P2 due to surface tension. Therefore, the film 56b having a surface with less unevenness can be obtained. Even when the workpiece P2 has a trench, the coverage of the film 56b with respect to the workpiece P2 can be improved. Since the film 56b is heated in a vacuum atmosphere or an inert gas atmosphere, a chemical reaction such as oxidation is suppressed.
　不活性ガスＧ１によって膜５６ｂの表面を加熱した後、ノズル１８ａから噴射される不活性ガスＧ２又は自然冷却によって、加熱された膜５６ｂの表面を局所的に冷却することができる。これにより、有機半導体材料の再結晶化（単結晶化）が進行する。その結果、粒界（グレインバウンダリ）に起因するキャリアトラップの少ない膜５６ｂが得られる。このような膜５６ｂは、高い移動度を有する。 After heating the surface of the film 56b with the inert gas G1, the surface of the heated film 56b can be locally cooled by the inert gas G2 sprayed from the nozzle 18a or by natural cooling. Thereby, recrystallization (single crystallization) of the organic semiconductor material proceeds. As a result, a film 56b with few carrier traps due to grain boundaries is obtained. Such a film 56b has a high mobility.
　図１５は、第８実施形態に係る成膜装置を用いて製造される電子デバイスの一例を模式的に示す図である。図１５に示される有機トランジスタ５０Ｂは、ボトムゲートボトムコンタクト（ＢＧＢＣ）構造を有する。有機トランジスタ５０Ｂは、基板ＳＢ上に設けられたゲート電極ＧＴを備える。ゲート電極ＧＴは、絶縁膜ＩＳによって覆われる。絶縁膜ＩＳ上には、互いに離間したソース電極ＳＣ及びドレイン電極ＤＮが設けられている。ソース電極ＳＣとドレイン電極ＤＮとの間において、絶縁膜ＩＳの表面にはトレンチＴが形成されている。トレンチＴの側壁は、垂直形状を有してもよいし、逆テーパー形状を有してもよい。ソース電極ＳＣ、ドレイン電極ＤＮ及びトレンチＴ上には膜５６ｂが設けられている。絶縁膜ＩＳ上には、ソース電極ＳＣ及びドレイン電極ＤＮを囲むように土手部ＢＮが設けられている。土手部ＢＮの上面にも膜５６ｂが設けられている。 FIG. 15 is a diagram schematically illustrating an example of an electronic device manufactured using the film forming apparatus according to the eighth embodiment. The organic transistor 50B shown in FIG. 15 has a bottom gate bottom contact (BGBC) structure. The organic transistor 50B includes a gate electrode GT provided on the substrate SB. The gate electrode GT is covered with an insulating film IS. On the insulating film IS, a source electrode SC and a drain electrode DN which are separated from each other are provided. A trench T is formed on the surface of the insulating film IS between the source electrode SC and the drain electrode DN. The side wall of the trench T may have a vertical shape or may have a reverse taper shape. A film 56b is provided on the source electrode SC, the drain electrode DN, and the trench T. On the insulating film IS, a bank portion BN is provided so as to surround the source electrode SC and the drain electrode DN. A film 56b is also provided on the top surface of the bank portion BN.
　膜５６ｂは、図１４の成膜装置１０Ｇにより形成可能である。有機トランジスタ５０Ｂの膜５６ｂ以外の構成が、図１４の被処理体Ｐ２に相当する。不活性ガスＧ１によって加熱された膜５６ｂが流動化又は液化すると、流動化又は液化した有機半導体材料は、絶縁膜ＩＳ、ソース電極ＳＣ及びドレイン電極ＤＮ上に濡れ広がる。その結果、凹凸の少ない表面を有する膜５６ｂが得られる。さらに、特にトレンチＴにおける膜５６ｂのカバレッジ性が向上する。したがって、有機トランジスタ５０Ｂでは、優れたトランジスタ特性（例えばＩｄ－Ｖｄｓ特性、Ｉｄ－Ｖｇｓ特性等）が得られる。 The film 56b can be formed by the film forming apparatus 10G in FIG. The configuration other than the film 56b of the organic transistor 50B corresponds to the target object P2 in FIG. When the film 56b heated by the inert gas G1 is fluidized or liquefied, the fluidized or liquefied organic semiconductor material wets and spreads over the insulating film IS, the source electrode SC, and the drain electrode DN. As a result, a film 56b having a surface with less unevenness is obtained. Further, the coverage of the film 56b particularly in the trench T is improved. Therefore, in the organic transistor 50B, excellent transistor characteristics (for example, Id-Vds characteristics, Id-Vgs characteristics, etc.) can be obtained.
　以上、本発明の好適な実施形態について詳細に説明したが、本発明は上記実施形態に限定されない。例えば、上記各実施形態の構成を任意に組み合わせてもよい。 As mentioned above, although the suitable embodiment of the present invention was described in detail, the present invention is not limited to the above-mentioned embodiment. For example, the configurations of the above embodiments may be arbitrarily combined.
　成膜装置１０は、ノズル１６ａ及び１６ｃの少なくとも一方を備えなくてもよい。成膜装置１０は、フェースアップ型の成膜装置であってもよい。すなわち、被処理体Ｐの一方の面（成膜面）が鉛直方向において上を向いてもよい。また、ノズル１８をノズル１６ａとノズル１６ｂとの間に配置してもよい。 The film forming apparatus 10 may not include at least one of the nozzles 16a and 16c. The film forming apparatus 10 may be a face-up type film forming apparatus. That is, one surface (film formation surface) of the workpiece P may face upward in the vertical direction. Further, the nozzle 18 may be disposed between the nozzle 16a and the nozzle 16b.
　１０，１０Ａ、１０Ｂ，１０Ｃ，１０Ｄ，１０Ｅ，１０Ｆ，１０Ｇ…成膜装置、１２…処理チャンバ、１６ｂ…第１のノズル、１８…第２のノズル、１８ａ…第３のノズル、３６…温度調節器、３６ａ…冷却器、５６ａ～５６ｄ…膜、Ｇ１…第１の不活性ガス、Ｇ２…第２の不活性ガス、Ｐ，Ｐ１，Ｐ２…被処理体。 10, 10A, 10B, 10C, 10D, 10E, 10F, 10G ... film forming apparatus, 12 ... processing chamber, 16b ... first nozzle, 18 ... second nozzle, 18a ... third nozzle, 36 ... temperature control 36a ... cooler, 56a-56d ... membrane, G1 ... first inert gas, G2 ... second inert gas, P, P1, P2 ... workpiece.

Claims (16)

  1. 　被処理体を収容する処理チャンバと、
    　前記被処理体上に膜を蒸着するための蒸着材料及びキャリアガスを含むガスを前記被処理体に噴き付ける第１のノズルと、
    　第１の不活性ガスを前記膜に噴き付ける第２のノズルと、
    　前記第１の不活性ガスの温度を調節する温度調節器と、
    を備える、成膜装置。     A processing chamber for containing an object to be processed;
    A first nozzle that sprays a gas containing a deposition material and a carrier gas for depositing a film on the object to be processed onto the object;
    A second nozzle that sprays a first inert gas onto the membrane;
    A temperature controller for adjusting the temperature of the first inert gas;
    A film forming apparatus comprising:
  2. 　被処理体を収容する処理チャンバと、
    　前記被処理体上に膜を蒸着するための蒸着材料及びキャリアガスを含むガスを前記被処理体に噴き付ける第１のノズルと、
    　前記ガスを前記被処理体に噴き付ける前に、第１の不活性ガスを前記被処理体に噴き付ける第２のノズルと、
    　前記第１の不活性ガスの温度を調節する温度調節器と、
    を備える、成膜装置。     A processing chamber for containing an object to be processed;
    A first nozzle that sprays a gas containing a deposition material and a carrier gas for depositing a film on the object to be processed onto the object;
    A second nozzle that sprays a first inert gas onto the object before the gas is sprayed onto the object;
    A temperature controller for adjusting the temperature of the first inert gas;
    A film forming apparatus comprising:
  3. 　前記第１の不活性ガスには実質的に蒸着材料が添加されていない、請求項１又は２に記載の成膜装置。 The film forming apparatus according to claim 1, wherein a vapor deposition material is not substantially added to the first inert gas.
  4. 　前記温度調節器が、前記第１の不活性ガスを加熱するヒーターである、請求項１～３のいずれか一項に記載の成膜装置。 The film forming apparatus according to any one of claims 1 to 3, wherein the temperature controller is a heater for heating the first inert gas.
  5. 　前記温度調節器が、前記第１の不活性ガスを冷却する冷却器である、請求項１～３のいずれか一項に記載の成膜装置。 The film forming apparatus according to any one of claims 1 to 3, wherein the temperature controller is a cooler that cools the first inert gas.
  6. 　前記温度調節器が、前記第１の不活性ガスを加熱するヒーターであり、
    　加熱された前記第１の不活性ガスを前記膜に噴き付けた後、第２の不活性ガスを前記膜に噴き付ける第３のノズルと、
    　前記第２の不活性ガスを冷却する冷却器と、
    を更に備える、請求項１に記載の成膜装置。     The temperature controller is a heater for heating the first inert gas;
    A third nozzle for spraying a second inert gas on the film after spraying the heated first inert gas on the film;
    A cooler for cooling the second inert gas;
    The film forming apparatus according to claim 1, further comprising:
  7. 　前記温度調節器が、前記第１の不活性ガスを加熱するヒーターであり、
    　加熱された前記第１の不活性ガスを前記被処理体に噴き付けた後、前記ガスを前記被処理体に噴き付ける前に、第２の不活性ガスを前記被処理体に噴き付ける第３のノズルと、
    　前記第２の不活性ガスを冷却する冷却器と、
    を更に備える、請求項２に記載の成膜装置。     The temperature controller is a heater for heating the first inert gas;
    After spraying the heated first inert gas onto the object to be processed, before spraying the gas onto the object to be processed, a third inert gas is sprayed onto the object to be processed. Nozzles,
    A cooler for cooling the second inert gas;
    The film forming apparatus according to claim 2, further comprising:
  8. 　蒸着材料及びキャリアガスを含むガスを被処理体上に噴き付けることによって、前記被処理体上に膜を蒸着する工程と、
    　温度調節された第１の不活性ガスを前記膜に噴き付ける工程と、
    を含む、成膜方法。     A step of depositing a film on the target object by spraying a gas containing a deposition material and a carrier gas on the target object;
    Spraying a temperature-controlled first inert gas onto the film;
    A film forming method comprising:
  9. 　温度調節された第１の不活性ガスを被処理体に噴き付ける工程と、
    　前記第１の不活性ガスを被処理体に噴き付けた後、蒸着材料及びキャリアガスを含むガスを前記被処理体上に噴き付けることによって、前記被処理体上に膜を蒸着する工程と、
    を含む、成膜方法。     Spraying the temperature-adjusted first inert gas onto the object to be treated;
    A step of depositing a film on the target object by spraying a gas containing a deposition material and a carrier gas on the target object after spraying the first inert gas on the target object;
    A film forming method comprising:
  10. 　前記第１の不活性ガスには実質的に蒸着材料が添加されていない、請求項８又は９に記載の成膜方法。 10. The film forming method according to claim 8, wherein a vapor deposition material is not substantially added to the first inert gas.
  11. 　加熱された前記第１の不活性ガスを前記膜に噴き付けることによって、前記膜を加熱する、請求項８に記載の成膜方法。 The film forming method according to claim 8, wherein the film is heated by spraying the heated first inert gas onto the film.
  12. 　前記膜を加熱した後、冷却された第２の不活性ガスを前記膜に噴き付けることによって、前記膜を冷却する工程を更に含む、請求項１１に記載の成膜方法。 The film forming method according to claim 11, further comprising a step of cooling the film by spraying a cooled second inert gas onto the film after the film is heated.
  13. 　冷却された前記第１の不活性ガスを前記膜に噴き付けることによって、前記膜を冷却する、請求項８に記載の成膜方法。 The film forming method according to claim 8, wherein the film is cooled by spraying the cooled first inert gas onto the film.
  14. 　加熱された前記第１の不活性ガスを前記被処理体に噴き付けることによって、前記被処理体を加熱する、請求項９に記載の成膜方法。 The film forming method according to claim 9, wherein the object to be processed is heated by spraying the heated first inert gas on the object to be processed.
  15. 　前記被処理体を加熱した後、冷却された第２の不活性ガスを前記被処理体に噴き付けることによって、前記被処理体を冷却する工程を更に含み、
    　前記被処理体を冷却した後、前記被処理体上に膜を蒸着する、請求項１４に記載の成膜方法。     The method further includes the step of cooling the target object by spraying the cooled second inert gas on the target object after heating the target object,
    The film forming method according to claim 14, wherein after the object to be processed is cooled, a film is deposited on the object to be processed.
  16. 　冷却された前記第１の不活性ガスを前記被処理体に噴き付けることによって、前記被処理体を冷却する、請求項９に記載の成膜方法。 The film forming method according to claim 9, wherein the object to be processed is cooled by spraying the cooled first inert gas onto the object to be processed.
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