WO2013054521A1 - ターゲットアセンブリ及びその製造方法 - Google Patents
ターゲットアセンブリ及びその製造方法 Download PDFInfo
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- WO2013054521A1 WO2013054521A1 PCT/JP2012/006519 JP2012006519W WO2013054521A1 WO 2013054521 A1 WO2013054521 A1 WO 2013054521A1 JP 2012006519 W JP2012006519 W JP 2012006519W WO 2013054521 A1 WO2013054521 A1 WO 2013054521A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/09—Mixtures of metallic powders
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/03—Making non-ferrous alloys by melting using master alloys
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
Definitions
- the present invention relates to a target assembly having a target layer formed by a cold spray method and a manufacturing method thereof.
- Cu—Ga based targets such as Cu—Ga and Cu—Ga—In are used for sputtering film formation of a light absorption layer of a thin film solar cell, for example.
- Patent Document 1 discloses that a Cu—Ga alloy preform is prepared by spray forming a molten CuGa alloy, and the preform is obtained by a hot isostatic pressing (HIP) method.
- HIP hot isostatic pressing
- Patent Document 2 a Ti powder and a TiO 2 powder are sprayed onto a raw tube at a high temperature and a high speed to obtain a mixture of Ti and TiO 2 .
- Patent Document 3 describes a method of forming a target layer made of a metal deposition film on a substrate by a cold spray method using metal powder as a raw material.
- JP 2010-265544 A Japanese Patent Laid-Open No. 2003-239067 WO2008 / 081585 specification
- Patent Document 1 since the target is produced by combining the spray forming method and the hot isostatic pressing method, the number of processes is large, and an increase in productivity and production cost becomes a problem.
- the thermal spraying method described in Patent Document 2 an increase in oxygen concentration accompanying the melting of the raw material cannot be avoided, and it is difficult to produce a high-density target.
- the method described in Patent Document 3 has a problem that it is difficult to produce an alloy target or a compound target because an alloy powder or a compound powder harder than a metal powder cannot be deposited stably.
- an object of the present invention is to provide a target assembly that can stably manufacture an alloy target or a compound target by a cold spray method and a manufacturing method thereof.
- a method of manufacturing a target assembly includes a first powder made of a metal element and a second powder made of an alloy or compound containing the metal element as a main component.
- Making a mixed powder Using the mixed powder as a raw material, a target layer made of an alloy or compound of the metal element is formed on the substrate surface by a cold spray method.
- a target assembly includes a substrate and a target layer.
- the target layer is formed on the surface of the base and has CuGa particles and Cu particles interposed between the CuGa particles.
- the manufacturing method of the target assembly which concerns on one Embodiment of this invention produces the mixed powder of the 1st powder which consists of a metal element, and the 2nd powder which consists of the alloy or compound which has the said metal element as a main component. including. Using the mixed powder as a raw material, a target layer made of an alloy or compound of the metal element is formed on the substrate surface by a cold spray method.
- the first powder is composed of a soft metal powder to which a cold spray method can be applied.
- the second powder is generally harder than these pure metals, film formation by the cold spray method is often difficult with only the second powder. Therefore, in the above manufacturing method, a mixed powder of the first powder and the second powder is used as a raw material, and the first powder is between the substrate surface and the second powder and between the second powder. By interposing, a deposition film of an alloy material or a compound material can be formed. Thereby, the alloy target or compound target by a cold spray method can be manufactured stably.
- Examples of the metal element constituting the first powder include Cu (copper), Al (aluminum), In (indium), Sn (tin), Ti (titanium), Ni (nickel), Co (cobalt), Cr ( Various soft metals, such as chromium), Ta (tantalum), and Mo (molybdenum), to which a cold spray method can be applied can be used.
- the alloy or compound constituting the second powder is also not particularly limited, and examples of the compound include oxides, nitrides, borides, silicides, and carbides.
- Cu powder is used for the first powder
- CuGa (copper-gallium alloy) powder is used for the second powder.
- a CuGa-based target layer used for forming a light absorption layer of a thin film solar cell can be obtained.
- the mixing ratio of the first powder to the mixed powder can be 20 atomic% or more and 50 atomic% or less. Thereby, it is possible to stably form a CuGa alloy target layer having a relative density of 95% or more and containing 30 atomic% or more and 60 atomic% or less of Ga.
- the substrate on which the target layer is formed may have a flat plate shape or a cylindrical shape.
- the target layer is formed on the outer peripheral surface of the substrate.
- the formation method is not particularly limited.
- the target layer can be formed on the surface of the substrate by moving the spray nozzle in the axial direction of the substrate while rotating the substrate around its axis.
- FIG. 1 is a schematic cross-sectional view showing a configuration of a target assembly according to an embodiment of the present invention.
- the target assembly 10 of the present embodiment includes a base body 11 as a backing tube and a target layer 12.
- the substrate 11 is made of a metal material such as Cu, Al, Ti, SUS (stainless steel).
- the base 11 has a cylindrical shape having an axis in the X-axis direction in FIG.
- the interior of the base 11 forms a flow path through which cooling water circulates.
- a magnet unit (not shown) for forming a fixed magnetic field on the outer peripheral surface of the base body 11 is disposed inside the base body 11.
- the target layer 12 is formed on the outer peripheral surface of the base 11 so as to cover the surface of the base 11.
- the thickness of the target layer 12 is not particularly limited and is, for example, 3 mm to 20 mm.
- FIG. 2 is a schematic diagram showing the internal structure of the target layer.
- the target layer 12 of this embodiment is composed of a mixed layer of Cu particles (G1) and CuGa particles (G2).
- the Cu particles (G1) are interposed between the CuGa particles (G2) and the surface of the base 11 and between the CuGa particles (G2), and are bonded to each other.
- the target layer 12 with a predetermined thickness having a relative density exceeding 90% can be configured.
- the Ga content of the target layer 12 is not particularly limited, and is appropriately set according to, for example, the use and specifications.
- the Ga content of the target layer 12 in the present embodiment is 30 atomic% or more and 60 atomic% or less, and constitutes a CuGa-based alloy target used for forming a light absorption layer of a thin film solar cell, for example.
- the target layer 12 is formed on the outer peripheral side surface of the substrate 11 by a cold spray method using a mixed powder of Cu powder and CuGa powder as a raw material.
- a method for manufacturing the target assembly 10 will be described.
- FIG. 3 is a process flow illustrating the method for manufacturing the target assembly of the present embodiment.
- the present embodiment includes a pure Cu powder adjustment step (ST1), a CuGa alloy powder adjustment step (ST2), a mixing step (ST3), and a cold spray step (ST4).
- the purity of the pure Cu powder is not particularly limited and is, for example, 99.99% or more.
- As the CuGa alloy powder one having a Ga content of, for example, 36 atomic% or more and 73 atomic% or less is used. The Ga content is appropriately set according to the Ga content of the target layer 12 to be produced.
- the shapes of the pure Cu powder and the CuGa alloy powder are not particularly limited. However, when depositing the target layer 12 by the cold spray method, a powder having a spherical shape or a shape close to a spherical shape is preferable from the viewpoint of film forming efficiency. Therefore, as a powder production method, an atomizing method, a rotating electrode method, a vacuum spray quenching method, or the like is applied.
- the particle diameters of the pure Cu powder and the CuGa alloy powder are not particularly limited, but it is preferable that the particle diameter is smaller in order to form the high-density target layer 12.
- the particle size of the pure Cu powder is, for example, 10 ⁇ m or less
- the particle size of the CuGa alloy powder is, for example, 200 to 300 ⁇ m or less.
- Various mixers can be used for mixing the pure Cu powder and the CuGa alloy powder.
- the mixing ratio of the pure Cu powder in the mixed powder is not particularly limited, but the target layer having a relative density of 97% or more by setting the mixing ratio of the pure Cu powder in the mixed powder to 15 atomic% or more and 50 atomic% or less. 12 can be formed stably.
- the Ga composition ratio of the CuGa alloy powder is set according to the blending ratio of the pure Cu powder, the Ga composition ratio in the target layer 12 to be formed, and the like.
- the target layer 12 is formed on the outer peripheral surface of the substrate 11 by the cold spray method using the mixed powder as a raw material (ST4).
- the cold spray method refers to a film forming method in which a raw material powder is collided with a base material in a solid state in supersonic flow together with an inert gas to form a film. Since the raw material powder is made to collide with the base material without being melted or gasified, it is possible to minimize deterioration of material characteristics and oxidation of the film due to heat. Therefore, this is a film forming technique that differs in principle from a thermal spraying method in which a raw material is melted or gasified to form a film.
- FIG. 4 is a schematic diagram illustrating a method for forming the target layer 12 in the present embodiment.
- a spray nozzle 20 is used for film formation. Connected to the spray nozzle 20 are a gas source 21 that accumulates inert gas, a powder supply source 22 that supplies raw material powder to the spray nozzle 20, and the like.
- the spray nozzle 20 is disposed opposite to the surface of the substrate 11 rotating around the axis 11a at a predetermined speed, and sprays the raw material powder together with an inert gas at a high speed to deposit the raw material powder on the surface of the substrate 11.
- a mixed powder of pure Cu powder and CuGa alloy powder is used as a raw material powder, and the pure Cu powder is interposed between the surface of the substrate 11 and the CuGa alloy powder and between the CuGa alloy powder.
- a deposited film of a CuGa-based alloy material is formed.
- the spraying speed of the raw material powder from the spray nozzle 20 is not particularly limited as long as it is a speed (critical speed) sufficient to allow the pure Cu powder to adhere to the surface of the substrate 11, and is, for example, 500 m / s or more.
- the inert gas used for the gas source 21 is not particularly limited, and for example, N 2 (nitrogen), He (helium), Ar (argon), or the like is used.
- the gas pressure and the gas flow rate can be appropriately set according to the gas type, the injection speed, and the like.
- the gas pressure can be about 0.65 MPa and the gas flow rate can be 15 L / min.
- the raw material powder may be heated to an appropriate temperature inside the spray nozzle 20. Thereby, the adhesion strength to the surface of the substrate 11 is increased, and the target layer 12 having a high relative density can be formed.
- the heating temperature should just be lower than melting
- the spray nozzle 20 may be reciprocated (scanned) in the axial direction of the base 11.
- the distance between the surface of the substrate 11 and the spray nozzle 20 is not particularly limited, and is set to, for example, 7 mm or more and 12 mm or less.
- the target assembly 10 shown in FIG. 1 is manufactured as described above.
- a cylindrical backing tube is used as the base 11, but a flat metal base may be used instead.
- a target assembly including a backing plate can be manufactured.
- a Cu-30 at% Ga alloy target is formed on the surface of a disk-shaped substrate made of an aluminum alloy (A5052) with a diameter of 4 inches.
- the layer was formed by the cold spray method.
- N 2 pressure 0.65 MPa, flow rate 15 L / min
- the raw material powder heating temperature is 500 ° C.
- the scanning speed is 20 mm / sec
- the number of scans is 20 times
- the substrate and the spray nozzle The distance between them was 7 mm.
- N 2 pressure 0.65 MPa, flow rate 15 L / min
- the raw material powder heating temperature is 500 ° C.
- the scanning speed is 20 mm / sec
- the number of scans is 20 times
- the substrate and the spray nozzle The distance between them was 7 mm.
- Example 1 A mixed powder of a Cu-40 at% Ga alloy powder having an average particle diameter of 100 ⁇ m prepared by the atomizing method and a pure Cu powder having an average particle diameter of 8 ⁇ m manufactured by the atomizing method was prepared. The mixing molar ratio of the CuGa alloy powder and the pure Cu powder was 68:32. Using this mixed powder as a raw material powder, a Cu-30 at% Ga alloy target layer was formed on the surface of a disk-shaped substrate made of an aluminum alloy (A5052) having a diameter of 4 inches by a cold spray method.
- Al alloy Al alloy
- N 2 pressure 0.65 MPa, flow rate 15 L / min
- the raw material powder heating temperature is 500 ° C.
- the scanning speed is 20 mm / sec
- the number of scans is 20 times
- the substrate and the spray nozzle The distance between them was 7 mm.
- the thickness of the target layer on the substrate was 5.0 to 5.5 mm.
- the relative density was measured by calculating the ratio between the apparent density of the deposited layer and the theoretical density. In this example, the relative density of the target layer was 98.1%.
- Example 2 Under the same conditions as in Example 1, except that the composition ratio of the CuGa alloy powder is Cu-37.5 at% Ga, the compounding molar ratio of the CuGa alloy powder and pure Cu powder is 80:20, and the base material is copper.
- a Cu-30 at% Ga alloy target layer was formed thereon by a cold spray method. As a result of film formation, the thickness of the target layer on the substrate was 4.5 to 5.0 mm, and the relative density was 97.0%.
- Example 3 The composition ratio of the CuGa alloy powder was Cu-36 at% Ga, the compounding molar ratio of the CuGa alloy powder and pure Cu powder was 85:15, and the base material was made of copper.
- a Cu-30 at% Ga alloy target layer was formed by a cold spray method. As a result of film formation, the thickness of the target layer on the substrate was 0.5 to 1.0 mm, and the relative density was 92.0%.
- Example 4 The composition ratio of the CuGa alloy powder was Cu-73 at% Ga, the compounding molar ratio of the CuGa alloy powder and pure Cu powder was 70:30, and the base material was made of copper.
- a Cu-50 at% Ga alloy target layer was formed by a cold spray method. As a result of film formation, the thickness of the target layer on the substrate was 5.0 to 5.5 mm, and the relative density was 99.0%.
- Example 5 A Cu-30 at% Ga alloy target layer was formed on the substrate by a cold spray method under the same conditions as in Example 1 except that the shape of the substrate was a cylindrical shape having a diameter of 4 inches. As a result of film formation, the thickness of the target layer on the substrate was 5.0 to 5.5 mm, and the relative density was 98.1%.
- Example 6 The same conditions as in Example 1 except that the composition ratio of the CuGa alloy powder is Cu-60 at% Ga, the mixing molar ratio of the CuGa alloy powder and the pure Cu powder is 50:50, and the base material is stainless steel (SUS304). Then, a Cu-30 at% Ga alloy target layer was formed on the substrate by the cold spray method. As a result of the film formation, the thickness of the target layer on the substrate was 3.5 to 4.0 mm, and the relative density was 97.3%.
- Example 7 The composition ratio of the CuGa alloy powder is Cu-60 at% Ga, the compounding molar ratio of the CuGa alloy powder and pure Cu powder is 50:50, the base material is made of copper, and the distance between the base and the spray nozzle is 12 mm. Under the same conditions as in Example 1, a Cu-30 at% Ga alloy target layer was formed on the substrate by the cold spray method. As a result of film formation, the thickness of the target layer on the substrate was 3.0 to 3.5 mm, and the relative density was 95.1%.
- Table 1 summarizes the conditions and results of Comparative Examples 1 and 2 and Examples 1 to 7.
- the present invention can be applied to the formation of a TiMo alloy-based sputter layer.
- a mixed powder of pure Ti powder and TiMo alloy powder can be used as a spray raw material.
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Abstract
Description
上記混合粉末を原料としてコールドスプレー法により基体表面に前記金属元素の合金又は化合物からなるターゲット層が形成される。
上記ターゲット層は、上記基体の表面に形成され、CuGa粒子と上記CuGa粒子間に介在するCu粒子とを有する。
上記混合粉末を原料としてコールドスプレー法により基体表面に前記金属元素の合金又は化合物からなるターゲット層が形成される。
図1は、本発明の一実施形態に係るターゲットアセンブリの構成を示す概略断面図である。本実施形態のターゲットアセンブリ10は、バッキングチューブとしての基体11と、ターゲット層12とを有する。
図3は、本実施形態のターゲットアセンブリの製造方法を説明する工程フローである。本実施形態は、純Cu粉末の調整工程(ST1)と、CuGa合金粉末の調整工程(ST2)と、混合工程(ST3)と、コールドスプレー工程(ST4)とを有する。
アトマイズ法で作製した平均粒径100μmのCu-30at%Ga合金粉末を原料粉末に用いて、直径4インチのアルミニウム合金(A5052)製の円板形状の基体の表面にCu-30at%Ga合金ターゲット層をコールドスプレー法により形成した。
アトマイズ法で作製した平均粒径100μmのCu-30at%Ga合金粉末を原料粉末に用いて、直径4インチの銅製の円板形状の基体の表面にCu-30at%Ga合金ターゲット層をコールドスプレー法により形成した。
アトマイズ法で作製した平均粒径100μmのCu-40at%Ga合金粉末と、アトマイズ法で作製した平均粒径8μmの純Cu粉末との混合粉末を作製した。CuGa合金粉末と純Cu粉末の配合モル比は68:32とした。この混合粉末を原料粉末に用い、直径4インチのアルミニウム合金(A5052)製の円板形状の基体の表面にCu-30at%Ga合金ターゲット層をコールドスプレー法により形成した。
CuGa合金粉末の組成比をCu-37.5at%Ga、CuGa合金粉末と純Cu粉末の配合モル比を80:20、基体の材料を銅製とした以外は実施例1と同様の条件で、基体上にCu-30at%Ga合金ターゲット層をコールドスプレー法により形成した。成膜の結果、基体上のターゲット層の厚みは4.5~5.0mm、相対密度は97.0%であった。
CuGa合金粉末の組成比をCu-36at%Ga、CuGa合金粉末と純Cu粉末の配合モル比を85:15、基体の材料を銅製とした以外は実施例1と同様の条件で、基体上にCu-30at%Ga合金ターゲット層をコールドスプレー法により形成した。成膜の結果、基体上のターゲット層の厚みは0.5~1.0mm、相対密度は92.0%であった。
CuGa合金粉末の組成比をCu-73at%Ga、CuGa合金粉末と純Cu粉末の配合モル比を70:30、基体の材料を銅製とした以外は実施例1と同様の条件で、基体上にCu-50at%Ga合金ターゲット層をコールドスプレー法により形成した。成膜の結果、基体上のターゲット層の厚みは5.0~5.5mm、相対密度は99.0%であった。
基体の形状を直径4インチの円筒形状とした以外は実施例1と同様の条件で、基体上にCu-30at%Ga合金ターゲット層をコールドスプレー法により形成した。成膜の結果、基体上のターゲット層の厚みは5.0~5.5mm、相対密度は98.1%であった。
CuGa合金粉末の組成比をCu-60at%Ga、CuGa合金粉末と純Cu粉末の配合モル比を50:50、基体の材料をステンレス鋼(SUS304)製とした以外は実施例1と同様の条件で、基体上にCu-30at%Ga合金ターゲット層をコールドスプレー法により形成した。成膜の結果、基体上のターゲット層の厚みは3.5~4.0mm、相対密度は97.3%であった。
CuGa合金粉末の組成比をCu-60at%Ga、CuGa合金粉末と純Cu粉末の配合モル比を50:50、基体の材料を銅製、基体とスプレーノズルとの間の距離を12mmとした以外は実施例1と同様の条件で、基体上にCu-30at%Ga合金ターゲット層をコールドスプレー法により形成した。成膜の結果、基体上のターゲット層の厚みは3.0~3.5mm、相対密度は95.1%であった。
11…基体
12…ターゲット層
20…スプレーノズル
Claims (7)
- 金属元素からなる第1の粉末と、前記金属元素を主成分とする合金又は化合物からなる第2の粉末との混合粉末を作製し、
前記混合粉末を原料としてコールドスプレー法により基体表面に前記金属元素の合金又は化合物からなるターゲット層を形成する
ターゲットアセンブリの製造方法。 - 請求項1に記載のターゲットアセンブリの製造方法であって、
前記第1の粉末は、Cu粉末であり、
前記第2の粉末は、CuGa粉末である
ターゲットアセンブリの製造方法。 - 請求項2に記載のターゲットアセンブリの製造方法であって、
前記混合粉末に対する前記第1の粉末の混合比率は、20原子%以上50原子%以下である
ターゲットアセンブリの製造方法。 - 請求項1に記載のターゲットアセンブリの製造方法であって、
前記基体は円筒形状を有し、
前記ターゲット層は、前記基体の外周側表面に形成される
ターゲットアセンブリの製造方法。 - 基体と、
前記基体の表面に形成され、CuGa粒子と前記CuGa粒子間に介在するCu粒子とを有するターゲット層と
を具備するターゲットアセンブリ。 - 請求項5に記載のターゲットアセンブリであって、
前記ターゲット層は、30原子%以上60原子%以下のGaを含有するCuGa合金で形成され、97%以上の相対密度を有する
ターゲットアセンブリ。 - 請求項5に記載のターゲットアセンブリであって、
前記基体は、金属製の円筒体である
ターゲットアセンブリ。
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Cited By (4)
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CN103320757A (zh) * | 2013-07-01 | 2013-09-25 | 烟台开发区蓝鲸金属修复有限公司 | 一种靶材及其制造方法 |
JP2014084515A (ja) * | 2012-10-25 | 2014-05-12 | Sumitomo Metal Mining Co Ltd | Cu−Ga合金スパッタリングターゲットの製造方法及びCu−Ga合金スパッタリングターゲット |
WO2015042622A1 (de) | 2013-09-27 | 2015-04-02 | Plansee Se | Kupfer-gallium sputtering target |
CN114059027A (zh) * | 2020-08-05 | 2022-02-18 | 松田产业株式会社 | Ag合金圆筒形溅射靶、溅射装置和电子器件的制造方法 |
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KR20160049255A (ko) * | 2014-10-27 | 2016-05-09 | 한국생산기술연구원 | 스퍼터링 타겟용 합금 및 이로 이루어진 스퍼터링 타겟 |
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CN108034925B (zh) * | 2017-10-27 | 2020-09-01 | 包头稀土研究院 | CuSe2化合物旋转靶材的制备方法 |
CN107904565B (zh) * | 2017-10-27 | 2020-09-01 | 包头稀土研究院 | Cu-In-Ga-Se化合物旋转靶材的制备方法 |
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CN108118326B (zh) * | 2017-12-28 | 2020-01-21 | 广东省新材料研究所 | 一种3.87m高纯铜旋转靶材的增材制造方法 |
TWI677589B (zh) * | 2019-01-14 | 2019-11-21 | 宏進金屬科技股份有限公司 | 一種濺射靶材的製備方法 |
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Cited By (8)
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JP2014084515A (ja) * | 2012-10-25 | 2014-05-12 | Sumitomo Metal Mining Co Ltd | Cu−Ga合金スパッタリングターゲットの製造方法及びCu−Ga合金スパッタリングターゲット |
CN103320757A (zh) * | 2013-07-01 | 2013-09-25 | 烟台开发区蓝鲸金属修复有限公司 | 一种靶材及其制造方法 |
WO2015042622A1 (de) | 2013-09-27 | 2015-04-02 | Plansee Se | Kupfer-gallium sputtering target |
JP2017500438A (ja) * | 2013-09-27 | 2017-01-05 | プランゼー エスエー | 銅−ガリウムスパッタリングターゲット |
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CN114059027A (zh) * | 2020-08-05 | 2022-02-18 | 松田产业株式会社 | Ag合金圆筒形溅射靶、溅射装置和电子器件的制造方法 |
JP2022029518A (ja) * | 2020-08-05 | 2022-02-18 | 松田産業株式会社 | Ag合金円筒形スパッタリングターゲット、スパッタリング装置及び電子デバイスの製造方法 |
JP7225170B2 (ja) | 2020-08-05 | 2023-02-20 | 松田産業株式会社 | Ag合金円筒形スパッタリングターゲット、スパッタリング装置及び電子デバイスの製造方法 |
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KR20140054419A (ko) | 2014-05-08 |
CN103930591A (zh) | 2014-07-16 |
JP5826283B2 (ja) | 2015-12-02 |
TWI548764B (zh) | 2016-09-11 |
TW201317380A (zh) | 2013-05-01 |
JPWO2013054521A1 (ja) | 2015-03-30 |
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