WO2013046249A1 - Dispositif d'émission d'ondes électromagnétiques, dispositif de détection d'ondes électromagnétiques, et dispositif d'imagerie les comprenant - Google Patents

Dispositif d'émission d'ondes électromagnétiques, dispositif de détection d'ondes électromagnétiques, et dispositif d'imagerie les comprenant Download PDF

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Publication number
WO2013046249A1
WO2013046249A1 PCT/JP2011/005397 JP2011005397W WO2013046249A1 WO 2013046249 A1 WO2013046249 A1 WO 2013046249A1 JP 2011005397 W JP2011005397 W JP 2011005397W WO 2013046249 A1 WO2013046249 A1 WO 2013046249A1
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electromagnetic wave
detection
light
generation
elements
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PCT/JP2011/005397
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English (en)
Japanese (ja)
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康雄 細田
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パイオニア株式会社
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Priority to PCT/JP2011/005397 priority Critical patent/WO2013046249A1/fr
Publication of WO2013046249A1 publication Critical patent/WO2013046249A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
    • G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]

Definitions

  • the present invention mainly relates to an electromagnetic wave generator that generates and detects terahertz waves, an electromagnetic wave detector, and an imaging device including these.
  • a terahertz imaging apparatus for imaging a terahertz wave image of a measurement object (sample) is known (see Patent Document 1).
  • This terahertz imaging apparatus includes a femtosecond laser that emits pulsed laser light, a polarization beam splitter that separates pulsed laser light into pump light and probe light, and a DOE (Diffractive) that splits the pump light into five pump lights.
  • Optical Element and a photoconductive switch array irradiated with five pump lights.
  • the terahertz wave generated by the photoconductive switch array is transmitted through the object to be measured, and the spatially modulated terahertz wave is imaged ( Imaging).
  • the spatially modulated terahertz wave is transmitted through the high-resistance Si wafer, while the probe light is irradiated onto the high-resistance Si wafer simultaneously with the terahertz wave through a mirror for adjusting the optical path length.
  • the terahertz wave and the probe light superimposed at the position of the high-resistance Si wafer enter the image sensor through the ZnTe wafer and the polarizing plate. Thereby, the output image of the image sensor becomes a terahertz image of the object to be measured.
  • the pump light (excitation light) is split into five pump lights by DOE, and the photoconductive switch array having five antennas is irradiated simultaneously (in parallel). ing.
  • the irradiation intensity of each pump light is extremely lowered, and a terahertz wave having a sufficient power cannot be generated from each part of the photoconductive switch array.
  • the present invention provides an electromagnetic wave generating device capable of generating an electromagnetic wave of sufficient power for each of a plurality of electromagnetic wave generating elements, and an electromagnetic wave detecting device corresponding to the electromagnetic wave generating device, and further capable of good sample sampling.
  • An object is to provide a maging device.
  • the electromagnetic wave generator includes an electromagnetic wave generating means in which a plurality of electromagnetic wave generating elements for generating an electromagnetic wave of a predetermined frequency band by irradiation of excitation light are arranged and an optical path of the excitation light, and a plurality of excitation lights are provided.
  • Excitation light irradiation means for sequentially irradiating the electromagnetic wave generating elements.
  • the excitation light irradiation means sequentially irradiates the plurality of electromagnetic wave generating elements with the excitation light irradiation means, the irradiation intensity of the excitation light irradiated to each electromagnetic wave generating element is set to a single electromagnetic wave generating element.
  • the electromagnetic wave with sufficient power can be generated from each electromagnetic wave generating element.
  • the excitation light irradiation means has a generation mirror part that reflects the excitation light and a generation mirror movable part that moves the generation mirror part so that the excitation light is sequentially irradiated.
  • a plurality of electromagnetic wave generating elements can be sequentially irradiated with excitation light with a simple structure.
  • a plurality of electromagnetic wave generating elements are arranged in a matrix, it is preferable to perform sequential irradiation in the form of progressive scanning or interlaced scanning in electron beam sequential scanning.
  • the plurality of electromagnetic wave generating elements are configured by generating element arrays aligned with each other.
  • excitation light deflecting means for deflecting the excitation light from the generation mirror unit so that the excitation light is incident on the light receiving surface of each electromagnetic wave generating element at a right angle.
  • each electromagnetic wave generating element is preferably a photoconductive antenna element.
  • electromagnetic waves can be efficiently generated from the excitation light. It is particularly suitable for generating terahertz waves from a femtosecond laser.
  • the electromagnetic wave generating means further includes a plurality of collimating lenses that extract the electromagnetic waves generated by the respective electromagnetic wave generating elements, and a plurality of focusing lenses that focus the extracted electromagnetic waves, and the plurality of electromagnetic wave generating elements and the plurality of collimating lenses. It is preferable that each of the focusing lenses and the plurality of focusing lenses are arrayed and unitized by a holder.
  • the excitation light irradiation means is composed of a MEMS structure.
  • the excitation light irradiating means and thus the entire electromagnetic wave generator, can be configured inexpensively and compactly.
  • the electromagnetic wave detection apparatus of the present invention is an electromagnetic wave detection apparatus for detecting a secondary electromagnetic wave after being transmitted or reflected from a sample of an electromagnetic wave generated by the above-described electromagnetic wave generation apparatus, and is incident upon irradiation with detection light.
  • the electromagnetic wave detecting element for detecting the secondary electromagnetic wave is arranged in the same arrangement form as the plurality of electromagnetic wave generating elements in a plurality of aligned arrangements, and is disposed in the optical path of the detection light.
  • a detection light irradiation means for sequentially irradiating the detection elements.
  • the detection light irradiation means sequentially irradiates the plurality of electromagnetic wave detection elements with the detection light irradiation means corresponding to the excitation light irradiation means that sequentially irradiates the excitation light to the plurality of electromagnetic wave generation elements,
  • the secondary electromagnetic wave (spatial modulated electromagnetic wave) after transmitting or reflecting the sample can be detected accurately for each electromagnetic wave detection element.
  • electromagnetic wave imaging of a sample, spectroscopic analysis of each part, etc. can be performed appropriately.
  • the detection light irradiation means has a detection mirror portion that reflects the detection light and a detection mirror movable portion that moves the mirror portion so that the detection light is sequentially irradiated.
  • a plurality of electromagnetic wave detection elements can be sequentially irradiated with detection light with a simple structure.
  • a plurality of electromagnetic wave detection elements are arranged in a matrix, it is preferable to perform sequential irradiation in the form of progressive scanning or interlaced scanning in the electron beam sequential scanning.
  • the plurality of electromagnetic wave detection elements are constituted by detection element arrays aligned with each other.
  • detection light deflecting means for deflecting the detection light from the detection mirror unit so that the detection light is incident on the light receiving surface of each electromagnetic wave detection element at a right angle.
  • each electromagnetic wave detection element is preferably a photoconductive antenna element.
  • electromagnetic waves can be detected efficiently.
  • it is suitable for detection of terahertz waves using a femtosecond laser.
  • the electromagnetic wave detection means further includes a plurality of focusing lenses for focusing the secondary electromagnetic waves incident on the respective electromagnetic wave detection elements, and a plurality of collimating lenses for taking the focused secondary electromagnetic waves into the respective electromagnetic wave detection elements. It is preferable that each of the electromagnetic wave detection element, the plurality of collimating lenses, and the plurality of focusing lenses is arrayed, and the whole is unitized by a holder.
  • the detection light irradiation means is composed of a MEMS structure.
  • the detection light irradiation means and thus the entire electromagnetic wave detection device, can be configured inexpensively and compactly.
  • the imaging apparatus of the present invention includes a light source means for irradiating pump light and probe light in synchronization, the above-described electromagnetic wave generator using pump light as excitation light, and the above-described electromagnetic wave detection apparatus using probe light as detection light.
  • the electromagnetic wave generation device and the electromagnetic wave detection device are arranged so that the optical path length of light is substantially the same. Note that “substantially the same” means that the scope of the present invention is not lost and is not limited to the completely same state but includes a range close to the same.
  • an electromagnetic wave with sufficient power can be generated from each electromagnetic wave generating element, and the secondary electromagnetic wave (spatial modulated electromagnetic wave) after passing through or reflecting the sample can be accurately detected for each electromagnetic wave detecting element. It can be detected well.
  • favorable electromagnetic wave imaging of a sample, appropriate spectroscopic analysis of each part of a sample, etc. can be implemented.
  • the generation mirror movable part and the detection mirror movable part are arranged so that the corresponding one electromagnetic wave detection element is irradiated with the probe light. It is preferable to further include mirror interlocking means for interlocking.
  • optical delay means for changing the optical path length of either the pump light or the probe light.
  • the optical path length on the pump light side and the optical path length on the probe light side can be made substantially the same at the position of each electromagnetic wave detection element. Therefore, not only good merging is possible, but also appropriate spectral information can be obtained.
  • FIG. 1 is a configuration diagram of a terahertz imaging apparatus according to a first embodiment of the present invention. It is a structural diagram of a terahertz wave generation unit. It is a perspective view of a photoconductive antenna element. It is structural drawing of a pump light irradiation unit. It is a flowchart of an imaging operation. It is a block diagram of the terahertz imaging device which concerns on 2nd Embodiment. It is a block diagram of the terahertz imaging device which concerns on 3rd Embodiment. It is a block diagram of the terahertz imaging device which concerns on 4th Embodiment.
  • This terahertz imaging device applies so-called time-domain spectroscopy, generates a terahertz wave using pulsed laser light, detects the terahertz wave after passing through the sample, and detects the terahertz wave from the detection result. Spectral analysis such as wave imaging and material analysis is performed.
  • FIG. 1 is a configuration diagram of a terahertz imaging apparatus.
  • a terahertz imaging apparatus 1A includes a laser irradiation unit 2 that generates a femtosecond laser, and a femtosecond laser irradiated from the laser irradiation unit 2.
  • a beam splitter 3 that separates pump light (pulse light) and probe light (pulse light), a terahertz wave generation unit (electromagnetic wave generation means) 4 that generates a terahertz wave by irradiation with pump light, and a terahertz via a sample S
  • the terahertz wave detection unit (electromagnetic wave detection means) 5 that detects the terahertz wave transmitted through the sample S by irradiation with the probe light and the detection-side optical path 12 that is the optical path of the probe light
  • a delay optical system optical delay means that delays the probe light incident on the terahertz wave detector 5 by the movable mirror 6a. If, interposed in the detection side optical path 12, a reflecting mirror 7 for reflecting the probe light incident from the delay optical system 6 to the terahertz wave detecting unit 5, a.
  • the optical path length of the generation-side optical path 11 that combines the optical path of the pump light and the optical path of the terahertz wave that follows the optical path from the terahertz wave generation section 4 to the detection element array 34 of the terahertz wave detection section 5 described later The terahertz wave generation unit 4 and the terahertz wave detection unit 5 are arranged so that the optical path length of the detection-side optical path 12 that becomes the optical path of the probe light reaching the array 34 is substantially the same.
  • the “light source means” described in the claims includes a laser irradiation unit 2 and a beam splitter 3. Further, the terahertz wave in this case includes not only electromagnetic waves of 0.1 THz to 10 THz but also electromagnetic waves of several tens GHz to several hundreds THz.
  • the terahertz wave generation unit 4 includes a generation element array 24 in which a plurality of generation-side photoconductive antenna elements (electromagnetic wave generation elements) 24a that generate terahertz waves by irradiation with pump light that is excitation light are arranged in a matrix.
  • the wave generation unit 21 and the pump light irradiation unit 22 that sequentially irradiates (scans) the plurality of generation side photoconductive antenna elements 24a with the pump light.
  • the terahertz wave detection unit 5 includes a detection element array 34 in which a plurality of detection-side photoconductive antenna elements (electromagnetic wave detection elements) 34 a that detect terahertz waves by irradiation with probe light that is detection light are arranged in a matrix.
  • Terahertz wave detection unit 31 and probe light irradiation unit 32 that sequentially irradiates (scans) probe light to a plurality of detection-side photoconductive antenna elements 34a.
  • the terahertz imaging apparatus 1A has a predetermined bias applied to the irradiation interlock circuit (mirror interlocking means) 14 that interlocks the pump light irradiation unit 22 and the probe light irradiation unit 32, and the plurality of generation side photoconductive antenna elements 24a.
  • a bias power supply circuit 15 for applying a voltage and a signal processing circuit 16 for detecting and processing a current generated in the detection-side photoconductive antenna element 34a are provided.
  • the signal processing circuit 16 performs spectral analysis processing such as imaging processing and material analysis.
  • the terahertz wave generation unit 21 is disposed in a posture facing the pump light irradiation unit 22 side
  • the terahertz wave detection unit 31 is disposed in a posture facing the probe light irradiation unit 32 side. Both have the same structure.
  • the pump light irradiation unit 22 is arranged in a posture to irradiate incident pump light toward the terahertz wave generation unit 21, and the probe light irradiation unit 32 applies the incident probe light to the terahertz wave detection unit 31. Although they are arranged so as to irradiate in the opposite direction, both have the same structure. Therefore, hereinafter, the terahertz wave generation unit 21 and the pump light irradiation unit 22 will be described in detail, and the terahertz wave detection unit 31 and the probe light irradiation unit 32 will be described briefly.
  • the terahertz wave generation unit 21 generates a plurality of generation side photoconductive antenna elements 24a arranged in a matrix and a generation element array 24 and each generation side photoconductive antenna element 24a.
  • an array holder 27 (casing) that holds the generating element array 24, the collimating lens array 25, and the focusing lens array 26 in a mutually aligned state (see FIG. 2 (a) and FIG. 2 (b)).
  • the generating element array 24 is formed by known semiconductor micromachining (details will be described later).
  • the collimating lens array 25 has a plurality of super hemispherical lenses (collimating lenses 25a) arranged in a matrix.
  • a silicon single crystal (high resistance silicon) wafer is subjected to mechanical cutting, wet etching, and ion milling etching. Is formed.
  • the focusing lens array 26 is a so-called microlens array, and is formed by, for example, injection molding or extrusion molding of amorphous polyolefin resin (APO resin).
  • APO resin amorphous polyolefin resin
  • the generating element array 24 and the collimating lens array 25 are aligned and brought into close contact with each other and incorporated into the array holder 27, and the focusing lens array 26 is incorporated in an aligned state with an optical distance. (See FIG. 2 (a)).
  • the focusing lens array 26 is incorporated in an inert gas such as vacuum or nitrogen gas, and the gap between the collimating lens array 25 and the focusing lens array 26 is purged with vacuum or inert gas. Is preferred.
  • the generation side photoconductive antenna element 24a includes a substrate 41, a buffer layer 42 formed on the substrate 41, a photoconductive film 43 formed on the buffer layer 42, and a photoconductive film 43. And a dipole antenna 44 formed thereon.
  • the substrate 41 is made of SI-GaAs (semi-insulating gallium arsenide), Si (silicon), InP (indium gallium arsenide), or the like.
  • the buffer layer 42 is a thin film epitaxially grown on the substrate 41, and is made of GaAs (gallium arsenide) or the like.
  • the photoconductive film 43 is epitaxially grown on the substrate 41 via the buffer layer 42, and is made of LT-GaAs (low temperature growth gallium arsenide) or the like.
  • the antenna 44 has a pair of transmission lines 46 and 46 arranged in parallel to each other, and is formed on the photoconductive film 43 by a photolithography process.
  • the pair of transmission lines 46, 46 have electrode portions (electrodes) 47, 47 extending inward at the intermediate portions thereof, and the mutual electrode portions 47, 47 face each other with a predetermined gap.
  • the gap light is irradiated with pump light.
  • conductive materials such as Al, Ti, Cr, Pd, Pt, Au—Ge alloy, and Al—Ti alloy are used as the antenna material in addition to Au (gold).
  • the form of the antenna 44 may be a bow tie type, a stripline type, a spiral type or the like in addition to the dipole type.
  • a terahertz wave (strictly, a terahertz pulse wave) is generated by the time variation (ultra-high-speed current modulation) of the pulse current, and is strongly radiated toward the substrate 41 having a large dielectric constant.
  • the current-modulated terahertz wave is collimated by the collimating lens 25a and further focused by the focusing lens 26a to reach the sample S (see FIG. 2C).
  • the terahertz wave detection unit 31 includes a detection element array 34 in which a plurality of detection-side photoconductive antenna elements 34 a are arranged in a matrix, and a terahertz wave (secondary electromagnetic wave) that is spatially modulated through the sample S.
  • a detection element array 34 in which a plurality of detection-side photoconductive antenna elements 34 a are arranged in a matrix, and a terahertz wave (secondary electromagnetic wave) that is spatially modulated through the sample S.
  • a focusing lens array 36 in which a plurality of focusing lenses 36a for focusing each of the focusing lenses are arranged in a matrix, and a plurality of collimating lenses 35a for taking the focused terahertz waves into each detection-side photoconductive antenna element 34a,
  • a collimating lens array 35 arranged in a matrix and an array holder 37 (casing) for holding the detection element array 34, the collimating lens array 35, and the focusing lens array 36 in a mutually positioned state are provided ( FIG. 1 and FIG. 2).
  • the detection-side photoconductive antenna element 34a includes a substrate 41, a buffer layer 42 formed on the substrate 41, and a photoconductive film 43 formed on the buffer layer 42. And a dipole antenna 44 formed on the photoconductive film 43 (see FIG. 3).
  • a terahertz wave secondary electromagnetic wave
  • probe light is irradiated between the mutual electrode portions 47 and 47 to excite the photoconductive film 43.
  • An instantaneous current flows between the electrode portions 47 and 47.
  • the signal processing circuit 16 measures the temporal fluctuation of the instantaneous current, that is, the time waveform of the spatially modulated terahertz wave.
  • the pump light irradiation unit 22 sequentially irradiates the generation mirror section 28 that reflects the pump light and the plurality of generation side photoconductive antenna elements 24 a of the generation element array 24.
  • a generation mirror movable portion 29 for moving the generation mirror portion 28 is provided.
  • the generation mirror movable unit 29 tilts the generation mirror unit 3 three-dimensionally, and sequentially irradiates, for example, pump light to the plurality of generation side photoconductive antenna elements 24a in a progressive scan manner.
  • the generating mirror movable part 29 can be configured by a plurality of motors and link mechanisms
  • the entire pump light irradiation unit 22 is preferably configured by a micro electro mechanical system (MEMS) structure.
  • MEMS micro electro mechanical system
  • FIG. 4 is a schematic diagram of a pump light irradiation unit 22 configured as a MEMS structure.
  • the pump light irradiation unit 22 is a so-called electromagnetic actuator drive scanner and corresponds to the generation mirror unit 28.
  • a circular mirror 51 and an actuator 52 corresponding to the generating mirror movable portion 29 are configured.
  • the actuator 52 corresponds to the X axis beam 54 that supports the mirror 51, a rectangular coil 55 that supports both ends of the X axis beam 54, the Y axis beam 56 that supports the coil 55, and the four sides of the coil 55.
  • four permanent magnets 57 provided.
  • the coil 55 By passing a constant frequency current through the coil 55, the coil 55 is vibrated by a repulsive force (Lorentz force) with the permanent magnet 57, and tilting around the X-axis beam 54 and the Y-axis beam 56 using the resonance frequency. , The mirror 51 tilts three-dimensionally. Thereby, the pump light is sequentially irradiated (scanned) in the form of progressive scanning to the plurality of generation side photoconductive antenna elements 24a.
  • a repulsive force Lipersive force
  • the probe light irradiation unit 32 sequentially detects a detection mirror unit 38 that reflects the probe light, and the probe light sequentially passes through the plurality of detection-side photoconductive antenna elements 34 a of the detection element array 34. It has a detection mirror movable part 39 that moves the detection mirror part 38 so as to be irradiated (see FIGS. 1 and 4).
  • the generation mirror movable part (pump light irradiation unit 22) 29 and the detection mirror movable part (probe light irradiation unit 32) 39 are interlocked by the irradiation interlock circuit 14. Specifically, when the pump light is irradiated to any one generation-side photoconductive antenna element 24a via the generation mirror unit 28, the terahertz wave generated thereby passes through the sample S and enters the detection side. The photoconductive antenna element 34 a is irradiated with probe light through the detection mirror unit 38.
  • the probe light is interlocked with this (not necessarily synchronized).
  • the light is sequentially irradiated to the left from the detection-side photoconductive antenna element 34a at the upper right of the detection element array 34.
  • the optical path length of the generation side optical path 11 and the optical path length of the detection side optical path 12 can always be made substantially the same.
  • the optical path lengths are substantially the same when the delay optical system 6 is at the home position (default position).
  • current measurement can be performed under the same conditions in spectroscopic analysis of each part of the sample S that drives the delay optical system 6.
  • the delay optical system 6 is preferably a MEMS structure (see FIG. 8).
  • the delay optical system 6 is moved to the home position and the bias power supply circuit 15 is driven to apply a bias voltage to the generating element array 24.
  • the pump light irradiation unit 22 irradiates the generating element array 24 with pump light
  • the probe light irradiation unit 32 irradiates the detection element array 34 with probe light.
  • the conductive antenna element 34a is irradiated with probe light (the irradiation interlock circuit 14 is driven).
  • the terahertz wave generated by the generation-side photoconductive antenna element 24a at the upper left is transmitted through the upper left portion of the sample S ("upper right” when viewed from the detection element array 34 side), and in a so-called spatially modulated state, Is incident on the detection-side photoconductive antenna element 34a (S01).
  • the spatially modulated terahertz wave since the terahertz wave having the same waveform arrives at a repetition of several tens of MHz (pump light as pulse laser light), the optical system between the pump light and the probe light is transmitted by the delay optical system 6. The optical delay is delayed (S03).
  • the signal processing circuit 16 obtains not only the intensity of the terahertz wave but also time-resolved measurement of the waveform of the terahertz wave and Fourier transforming the waveform to obtain the amplitude and phase for each frequency.
  • analysis information spectral analysis information
  • terahertz imaging information for searching for partial physical (including thickness direction) physical and chemical properties of the sample S and terahertz wave imaging information are obtained (S04: NO).
  • next generation side photoconductive antenna element 24a and the next detection side photoconductive antenna element 34a are irradiated with the pump light and the probe light. Perform the same operation. In this manner, the same operation is sequentially performed while sequentially irradiating the pump light and the probe light, so that all the generation side photoconductive antenna elements 24a and all the detection side photoconductive antenna elements 34a Analysis information and imaging information are obtained (S04: YES).
  • the generation element array 24 and the detection element array 34 are sequentially irradiated with the pump light and the probe light.
  • the second-order terahertz wave (spatial modulated terahertz wave) after transmitting the sample S through the sample S (spatial modulated) can be generated from each detection-side photoconductive antenna element. 34a can be detected with high accuracy. Thereby, terahertz wave imaging of the sample S, spectroscopic analysis of each part of the sample S, and the like can be appropriately performed.
  • partial analysis including the thickness direction of the sample S that is, three-dimensional analysis (dielectric constant, refractive index, etc.) of the sample S is possible.
  • terahertz wave imaging a terahertz image obtained by continuously spatially cutting the sample S in the thickness direction can be obtained.
  • the terahertz imaging device 1B according to the second embodiment is different in the terahertz wave generation unit 4 and the terahertz wave detection unit 5 as compared with the first embodiment.
  • the pump light that is disposed in the vicinity of the terahertz wave generation unit (generation element array 24) 21 and is sequentially irradiated from the pump light irradiation unit 22 to the generation element array 24 is converted into parallel light.
  • a generation side deflecting lens (excitation light deflecting means) 61 for deflecting is provided.
  • the terahertz wave detection unit 5 is disposed in the vicinity of the terahertz wave detection unit (detection element array 34) 31, and deflects probe light sequentially irradiated from the probe light irradiation unit 32 to the detection element array 34 into parallel light.
  • a detection side deflection lens (detection light deflection means) 62 is provided.
  • the generation side deflection lens 61 deflects the pump light from the generation mirror unit 28 so that the pump light is incident on the light receiving surface of each generation side photoconductive antenna element 24a at a right angle.
  • the detection-side deflection lens 62 deflects the probe light from the detection mirror unit 38 so that the probe light is incident on the light receiving surface of each detection-side photoconductive antenna element 34a at a right angle.
  • the generation side deflection lens 61 and the detection side deflection lens 62 are preferably composed of a polyethylene lens or the like.
  • the pump light is incident on the gap portion (photoconductive film 43) of the antenna 44 in the generation side photoconductive antenna element 24a.
  • an elliptical spot is formed, and the power density is reduced.
  • the excitation efficiency of the photoconductive film 43 by the pump light decreases.
  • the detection efficiency decreases in the detection side photoconductive antenna element 34a.
  • the terahertz imaging apparatus 1C of the third embodiment is different in the terahertz wave generation unit 4 and the terahertz wave detection unit 5 as compared with the one of the first embodiment.
  • the terahertz wave generation unit 21 includes a generation element array 24 in which a plurality of generation-side photoconductive antenna elements 24a are arranged in a straight line (line shape), and a plurality of collimating lenses 25a.
  • the pump light irradiation unit 22 linearly sequentially irradiates the generation mirror unit 28 and the plurality of generation side photoconductive antenna elements 24a.
  • a generation mirror movable part 29 for moving the generation mirror part 28.
  • the generation mirror movable portion 29 has an actuator structure that translates the generation mirror portion 28 in the extending direction of the terahertz wave generation unit 21.
  • the terahertz wave detection unit 31 includes a detection element array 34 in which a plurality of detection-side photoconductive antenna elements 34a are arranged in a straight line (line shape), and a plurality of collimating lenses 35a.
  • the collimating lens array 35 arranged linearly, the plurality of focusing lenses 36a, the focusing lens array 36 arranged linearly, and the detection element array 34, the collimating lens array 35, and the focusing lens array 36 are mutually connected.
  • an array holder 37 held in a positioned state. That is, a line-type terahertz wave detection unit 31 is configured.
  • the probe light irradiation unit 32 linearly and sequentially irradiates the detection mirror unit 38 and the probe light to the plurality of detection-side photoconductive antenna elements 34a.
  • a detection mirror movable part 39 for moving the detection mirror part 38.
  • the detection mirror movable part 39 has an actuator structure that translates the detection mirror part 38 in the extending direction of the terahertz wave detection unit 31.
  • terahertz time domain spectroscopy although one-dimensional (line type), pump light and probe light are sequentially applied to the generation element array 24 and the detection element array 34. Since irradiation is performed, a terahertz wave having a sufficient power can be generated from each generation-side photoconductive antenna element 24a, and a second-order terahertz wave after passing through the sample S (which may be reflected) ( Spatially modulated terahertz waves) can be detected with higher accuracy than each detection-side photoconductive antenna element 34a.
  • the sample S is intermittently moved in a direction orthogonal to the extending direction of the terahertz wave generation unit 21 (terahertz wave detection unit 31). Thereby, the detection result similar to 1st Embodiment can be obtained.
  • the terahertz imaging device 1D of the fourth embodiment has a handy type device configuration, and irradiates the sample S with the terahertz wave from the terahertz wave generation unit 4 to the sample S and reflects the terahertz wave reflected from the sample S (space)
  • the modulated terahertz wave) enters the terahertz wave detection unit 5.
  • an objective lens 71 for condensing the terahertz wave on the sample S is provided at the tip of the apparatus, and a terahertz wave beam that reflects the terahertz wave toward the terahertz wave detection unit 5 is provided in the optical path of the terahertz wave.
  • a splitter 72 is provided.
  • the pump light irradiation unit 22 and the probe light irradiation unit 32 are configured by a MEMS structure (see FIG. 4), and the delay optical system 6 is also configured by a MEMS structure. is doing. Further, in the terahertz wave generation unit 21 and the terahertz wave detection unit 31, instead of the generation element array 24 and the detection element array 34, a single generation side photoconductive antenna element 73 and a single detection side photoconductive antenna element 74 are provided. have.
  • the generation-side photoconductive antenna element 73 and the detection-side photoconductive antenna element 74 each have a line structure having an antenna 44 in which a plurality of pairs of electrode portions 47 and 47 of a pair of transmission lines 46 and 46 are formed at equal intervals. It has become.
  • the pump light irradiation unit 22 sequentially irradiates the pump light
  • the probe light irradiation unit 32 sequentially irradiates the plurality of gap portions formed by the plurality of sets of electrode portions 47 and 47.
  • the irradiation interlock circuit 14 is omitted.
  • a lightweight and compact handy-type terahertz imaging apparatus 1D can be configured, and appropriate spectral analysis of the sample S and good terahertz imaging are possible.
  • 1A, 1B, 1C, 1D terahertz imaging device 2 laser irradiation unit, 3 beam splitter, 4 terahertz wave generation unit, 5 terahertz wave detection unit, 6 delay optical system, 14 irradiation interlock circuit, 15 bias power supply circuit, 16 signal processing Circuit, 21 terahertz wave generating unit, 22 pump light irradiation unit, 24 generating element array, 24a generating side photoconductive switch element, 25 collimating lens array, 25a collimating lens, 26 focusing lens array, 26a focusing lens, 27 array holder, 28 Generation mirror section, 29 generation mirror movable section, 31 terahertz wave detection unit, 32 probe light irradiation unit, 34 detection element array, 34a detection side photoconductive switch element, 35 collimating lens array, 35a Formate lens, 36 a focusing lens array, 36a converging lens 37 array holder, 38 detecting the mirror unit 39 detects the mirror moving unit, 61 generating side deflecting lens, 62 the detection side

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Abstract

L'invention concerne le problème de fourniture d'un dispositif d'émission d'ondes électromagnétiques grâce auquel on peut amener chaque élément d'émission d'ondes électromagnétiques à émettre des ondes électromagnétiques d'une puissance suffisante, un dispositif de détection d'ondes électromagnétiques qui correspond au dispositif d'émission d'ondes électromagnétiques, et un dispositif d'imagerie grâce auquel il est possible de produire une bonne image d'un échantillon. Un dispositif d'émission d'ondes électromagnétiques comprend : une unité d'émission d'ondes térahertziennes (21) qui est formée par le positionnement de plusieurs éléments d'antennes photoconductrices (24a). Un dispositif d'imagerie comprend : un moyen de source lumineuse pour synchroniser et projeter la lumière pompée et la lumière de sonde ; le dispositif d'émission d'ondes électromagnétiques ; et dispositif de détection d'ondes électromagnétiques présentant la même structure que le dispositif d'émission d'ondes électromagnétiques.
PCT/JP2011/005397 2011-09-26 2011-09-26 Dispositif d'émission d'ondes électromagnétiques, dispositif de détection d'ondes électromagnétiques, et dispositif d'imagerie les comprenant WO2013046249A1 (fr)

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PCT/JP2011/005397 WO2013046249A1 (fr) 2011-09-26 2011-09-26 Dispositif d'émission d'ondes électromagnétiques, dispositif de détection d'ondes électromagnétiques, et dispositif d'imagerie les comprenant

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JP2015087163A (ja) * 2013-10-29 2015-05-07 パイオニア株式会社 テラヘルツ波計測装置
JP5903700B1 (ja) * 2015-05-07 2016-04-13 株式会社ジェネシア マルチチャンネル分光器
CN105923600A (zh) * 2016-06-02 2016-09-07 上海师范大学 一种幅度可调的太赫兹近场激发型分子传感器及其制造方法
WO2018154690A1 (fr) * 2017-02-23 2018-08-30 株式会社ニコン Dispositif de mesure térahertz, dispositif d'inspection, procédé de mesure térahertz et procédé d'inspection
EP2752287B1 (fr) * 2013-01-02 2019-02-27 Proton Products International Limited Dispositif pour mesurer des produits industriels fabriqués avec des techniques d'extrusion
WO2019059214A1 (fr) 2017-09-22 2019-03-28 グローリー株式会社 Capteur d'ondes électromagnétiques, dispositif de détection d'ondes électromagnétiques, dispositif de traitement de milieu et dispositif d'inspection de milieu
WO2020090782A1 (fr) * 2018-10-30 2020-05-07 パイオニア株式会社 Dispositif de production d'ondes électromagnétiques et système de production d'ondes électromagnétiques
JP2020159744A (ja) * 2019-03-25 2020-10-01 グローリー株式会社 電磁波検出装置、媒体処理装置及び電磁波検出方法

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2752287B1 (fr) * 2013-01-02 2019-02-27 Proton Products International Limited Dispositif pour mesurer des produits industriels fabriqués avec des techniques d'extrusion
JP2015087163A (ja) * 2013-10-29 2015-05-07 パイオニア株式会社 テラヘルツ波計測装置
JP5903700B1 (ja) * 2015-05-07 2016-04-13 株式会社ジェネシア マルチチャンネル分光器
CN105923600A (zh) * 2016-06-02 2016-09-07 上海师范大学 一种幅度可调的太赫兹近场激发型分子传感器及其制造方法
WO2018154690A1 (fr) * 2017-02-23 2018-08-30 株式会社ニコン Dispositif de mesure térahertz, dispositif d'inspection, procédé de mesure térahertz et procédé d'inspection
WO2019059214A1 (fr) 2017-09-22 2019-03-28 グローリー株式会社 Capteur d'ondes électromagnétiques, dispositif de détection d'ondes électromagnétiques, dispositif de traitement de milieu et dispositif d'inspection de milieu
WO2020090782A1 (fr) * 2018-10-30 2020-05-07 パイオニア株式会社 Dispositif de production d'ondes électromagnétiques et système de production d'ondes électromagnétiques
JPWO2020090782A1 (ja) * 2018-10-30 2021-10-21 パイオニア株式会社 電磁波発生装置及び電磁波発生システム
US11437956B2 (en) 2018-10-30 2022-09-06 Pioneer Corporation Electromagnetic wave generation device and electromagnetic wave generation system
JP7186796B2 (ja) 2018-10-30 2022-12-09 パイオニア株式会社 電磁波発生装置及び電磁波発生システム
JP2020159744A (ja) * 2019-03-25 2020-10-01 グローリー株式会社 電磁波検出装置、媒体処理装置及び電磁波検出方法
WO2020195245A1 (fr) 2019-03-25 2020-10-01 グローリー株式会社 Dispositif de détection d'ondes électromagnétiques, dispositif de traitement de milieu et procédé de détection d'ondes électromagnétiques
JP7256047B2 (ja) 2019-03-25 2023-04-11 グローリー株式会社 電磁波検出装置、媒体処理装置及び電磁波検出方法

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