WO2013035900A1 - Method for manufacturing graphene film and pattern thereof - Google Patents

Method for manufacturing graphene film and pattern thereof Download PDF

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Publication number
WO2013035900A1
WO2013035900A1 PCT/KR2011/006650 KR2011006650W WO2013035900A1 WO 2013035900 A1 WO2013035900 A1 WO 2013035900A1 KR 2011006650 W KR2011006650 W KR 2011006650W WO 2013035900 A1 WO2013035900 A1 WO 2013035900A1
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graphene
ink
pattern
substrate
reducing agent
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PCT/KR2011/006650
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French (fr)
Korean (ko)
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최경철
김국주
안성일
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한국과학기술원
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene

Definitions

  • the present invention relates to a method for producing a graphene film and a pattern.
  • a graphene oxide ink and a reducing agent ink are individually printed at the same point to induce a chemical reaction on a substrate.
  • the present invention relates to a graphene film and a pattern manufacturing method for forming a graphene film and a pattern at a low cost, thereby rapidly forming a large-area high-performance graphene film and a pattern, and applying the same to an electronic device.
  • the graphene layer is mechanically peeled off from the graphite. This technique was used to form the graphene layer for the first time, but it is difficult to be applied to the actual device fabrication process or mass production process because of problems such as reproducibility problems and difficulty in securing a large amount of graphene.
  • a technique for depositing graphene using chemical vapor deposition Using this technique, high-performance graphene can be obtained relatively uniformly, but because it is basically a vacuum process, it is expensive and has problems in scalability.
  • graphene oxide is produced by the solution phase chemical method to form the graphene oxide film using spin coating or vacuum filtration, and then reduction technique such as heat treatment or chemical treatment. There is a method of obtaining a graphene film using these.
  • the formation of the graphene pattern is generally performed by forming the graphene layer in the same manner as described above, forming a material to be a mask on the graphene layer, and then applying a wet and dry etching process to the pattern of the mask. After forming a graphene pattern, and then removing the masked material to obtain a graphene pattern finally.
  • the graphene pattern formation technique is expensive because it is subjected to many processes described above, the characteristics of the graphene itself is likely to deteriorate, and it is difficult to secure reproducibility.
  • the third technique spin coating or vacuum filtration of solution phase graphene oxide, it is easy to expand to a large area and is expensive to manufacture graphene oxide.
  • There is a limit in forming a high performance graphene pattern because an etching process is required and it is difficult to overcome the above-described deterioration problem or reproducibility.
  • the present invention is to solve the above-described problems, an object of the present invention, by printing the graphene oxide (ink) ink and reducing agent ink separately at the same point and chemical reaction on the substrate
  • the graphene film and pattern manufacturing method for applying it to an electronic device To provide.
  • the graphene manufacturing method by printing the graphene oxide ink and the reducing agent ink on the substrate individually in the same pattern, the graphene oxide ink and the reducing agent It is characterized by forming a graphene film or a pattern on the substrate by the reaction of the ink.
  • each ink may be sprayed through two different nozzles of inkjet printing means.
  • a screen printing or spray printing method using a screen mask may be used for printing the graphene oxide ink and the reducing agent ink on the substrate.
  • the graphene film or pattern may be used as an electrode or an active layer of an electronic device.
  • the substrate may be glass, semiconductor wafer, flexible plastic, or paper.
  • the graphene oxide ink may be prepared by oxidizing graphite and then removing oxidized graphene fragments.
  • Ultrasonic decomposition or sonication may be used to remove the graphene oxide fragments.
  • the graphene oxide ink may include a solvent consisting of one or a plurality of mixtures of water, ethanol, methanol, acetone, and ethylene glycol.
  • the reducing agent ink may include one or a plurality of mixtures of hydrazine, ascorbic acid, iron ion, hydrochloric acid.
  • the reducing agent ink may include a solvent consisting of one or a plurality of mixtures of water, ethanol, methanol, acetone, and ethylene glycol.
  • the temperature of the substrate during printing of the graphene oxide ink and the reducing agent ink on the substrate may be within 50 °C to 200 °C.
  • the electronic device may be a display device, a solar cell, a thin film speaker, a transistor, or a chemical sensor.
  • the graphene film according to another aspect of the present invention by printing the graphene oxide ink and the reducing agent ink on the substrate individually in the same pattern, the substrate by the reaction of the graphene oxide ink and the reducing agent ink It may be formed in a thin film or pattern form on the.
  • An electronic device is an electronic device having a graphene film or a pattern as an electrode or an active layer, wherein the graphene film or pattern includes graphene oxide ink and a reducing agent ink on a substrate, respectively.
  • the same pattern may be printed and formed through mutual reaction.
  • the graphene oxide (ink) and the reducing agent (ink) by printing the ink at the same point separately to induce a chemical reaction on the substrate It can be formed in a pattern.
  • 1 is a view for explaining the state of the graphene oxide before reduction and the graphene ink after reduction in general.
  • FIG. 2 is a view for explaining an inkjet printing method for producing a graphene film and a pattern according to an embodiment of the present invention.
  • the graphene film is formed through reduction treatment after forming a graphene oxide film on the substrate by spin coating, vacuum filtration, spray, Langmuir-Blodgett method, or the like. Can be obtained.
  • the graphene film obtained by such a conventional method is a graphene film formed entirely on the substrate, and in order to obtain a desired pattern such as an electrode or a channel of the electronic device, the aforementioned patterning process is additionally required. This multi-step process not only reduces the quality, performance and reproducibility of the graphene pattern, but also increases the cost.
  • the present invention proposes a method in which the graphene oxide ink and the reducing agent ink are separately printed on a substrate to cause a chemical reaction on the substrate to finally form a graphene film and a pattern, which is an ink jet. It may be implemented by screen printing or spray printing with a mask or the like, and the graphene film and pattern in this manner may be used as a display device, a solar cell, a speaker, It may be used as an electrode or an active layer of an electronic device such as a transistor or a chemical sensor, and may be applied to other electronic industries.
  • the graphene oxide ink is printed first rather than the graphene itself ink to form a film and a pattern, followed by heat treatment or chemical treatment. It was also used to reduce to. As shown in FIG. 1, when the graphene oxide ink is made and then reduced as it is, the graphene oxide is reduced to graphene and sinks to a precipitate. This agglomeration of the graphene (agglomeration) to form a precipitate can not be applied to inkjet printing because it can cause nozzle clogging problems of inkjet printing of several tens of micrometers (micrometer) size.
  • FIG. 2 is a view for explaining an inkjet printing method for producing a graphene film and a pattern according to an embodiment of the present invention.
  • the inkjet printing method is a method of spraying ink onto a substrate by using an inkjet printer having an ink solution ejecting head or a nozzle, thereby obtaining an ink pattern on the substrate. Since the material cost can be drastically reduced, and there is no limitation of the substrate size, it is easy to expand to a large area, and therefore, a method of using the same for forming the graphene film and the pattern will be described first.
  • the new inkjet printing technique proposed by the present invention prints by spraying graphene oxide ink and reducing agent ink on the substrate from two different nozzles (A, B), as shown in FIG.
  • the two solutions react on the substrate to form graphene as a pattern.
  • the graphene oxide ink and the reducing agent ink are mixed, a precipitate is formed as described above, and the precipitate may not be applied to ink jet printing because it may cause problems such as clogging of the ink jet nozzle. Therefore, as shown in FIG. 2, the graphene oxide ink and the reducing agent ink are printed to be sprayed from two different nozzles A and B, but the same pattern is printed at the same point to reduce the clogging problem on the substrate. In addition, the process time and cost can be saved since no other reduction process is required afterwards.
  • printing means e.g., in the form of a printer
  • the printing means may be controlled by an external controller such as a computer, but according to a pre-programmed command (e.g., a command for ejecting ink along a pattern on the substrate), the controller may be placed only where desired along the pattern on the substrate.
  • a pre-programmed command e.g., a command for ejecting ink along a pattern on the substrate
  • Each ink may be sprayed through the nozzles A and B to form a graphene film in the form of a thin film or a pattern.
  • various methods such as a piezo method using vibration, a thermal method using heat, and a bubble jet method may be used.
  • each ink is ejected from the two nozzles (A, B) and printed at the same point in the same pattern on the substrate to form a graphene film or pattern by self-reduction reaction, no other reduction process is required.
  • the substrate may be glass, a semiconductor wafer, a flexible plastic, paper, or the like, and the temperature of the substrate during inkjet printing is preferably within 50 ° C to 200 ° C.
  • the graphene oxide ink sprayed from the nozzle A may be prepared by oxidizing graphite and then removing oxidized graphene fragments by ultrasonic decomposition or ultrasonic treatment.
  • a solvent composed of one or a plurality of mixtures of water, ethanol, methanol, acetone, and ethylene glycol may be included.
  • the reducing agent ink sprayed from the nozzle B to reduce the graphene oxide ink sprayed on the substrate is one or a mixture of hydrazine, ascorbic acid, iron ion, hydrochloric acid.
  • the reducing agent ink may include a solvent composed of one or a plurality of mixtures of water, ethanol, methanol, acetone, and ethylene glycol.
  • the method of forming such a graphene film and pattern may be screen printing or spray printing with a mask using the graphene oxide ink and the reducing agent ink as described above. Can be implemented.
  • a screen mask having a portion drilled in a desired pattern is placed on a substrate or substrate, and the graphene oxide ink and the reducing agent ink are sprayed separately (sequentially) on the screen mask to apply a predetermined pattern to the substrate. It is also possible to print or press a predetermined pressing means on the screen mask so that a predetermined pattern is made on the substrate as each ink passes through the hole of the mask. Accordingly, the inks formed on the substrate individually may cause a chemical reaction to finally form a graphene film in the form of a thin film or a pattern similar to inkjet printing.
  • the temperature of the substrate may be within 50 ° C to 200 ° C.
  • the characteristics of the ink are first adjusted to each printing technique, and then screen printing and spray printing are applied on the desired equipment by applying a screen mask, etc., and then temperature is applied on the substrate. Reactions to obtain the desired material can produce the same results as inkjet printing.
  • the graphene film and the pattern produced by chemically reacting on the substrate by separately printing the graphene oxide ink and the reducing agent ink on the substrate include one layer composed of carbon atoms in terms of graphene properties. It consists of) and has a two-dimensional thin film form with a hexagonal network due to sp 2 hybrid orbit. It is known that inside the graphene, electrons move as if they do not have an effective mass, and have a very high electron mobility exceeding 100,000 cm 2 / Vs even at room temperature. Therefore, the graphene film and pattern produced according to the present invention can be applied throughout the electronic industry.
  • ITO indium tin oxide
  • LCDs liquid crystal displays
  • PDPs plasma display panels
  • other organic ELs organic ELs
  • this transparent electrode can be replaced with the graphene film or pattern of the present invention that can be formed into a thin thin film with high conductivity.
  • the graphene film and the pattern of the present invention may be applied to a field requiring a transparent electrode such as a solar cell or a transparent thin film speaker.
  • the graphene film and the pattern formed by the proposed technique as described above may also have the properties of the semiconductor depending on the degree of the graphene reduction, thin film transistor (TFT), chemical sensor It may be used as an electrode or an active layer (or channel layer) of an electronic device such as a chemical sensor.
  • TFT thin film transistor
  • chemical sensor It may be used as an electrode or an active layer (or channel layer) of an electronic device such as a chemical sensor.
  • the graphene film and pattern in order to form the graphene film and pattern according to the present invention, a method of printing the graphene oxide ink and the reducing agent ink separately on a substrate and allowing a chemical reaction to occur on the substrate is used. Not only used to form the pin film and pattern, it will be similarly applicable to form various thin films or patterns, such as polymer film in various fields.

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Abstract

The present invention relates to a method for manufacturing a graphene film and a pattern thereof which can form a large-area, high performance graphene film and a pattern at low cost, and apply the film and the pattern on an electronic device by separately printing with graphene oxide ink and reducing agent ink at the same point and inducing a chemical reaction on a substrate to make a high performance graphene and a pattern simultaneously.

Description

그라핀 필름 및 패턴 제조 방법Graphene film and pattern manufacturing method
본 발명은 그라핀 필름 및 패턴 제조 방법에 관한 것으로서, 특히, 그라핀 산화물(graphene oxide) 잉크(ink)와 환원제(reducing agent) 잉크를 개별적으로 같은 지점에 인쇄하여 기판상에서 화학반응을 유도함으로써 고성능 그라핀의 제조와 패턴이 동시에 이루어지도록 함으로써, 저비용으로 신속하게 대면적 고성능 그라핀 필름 및 패턴을 형성할 수 있고, 이를 전자소자에 응용할 수 있도록 하기 위한 그라핀 필름 및 패턴 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a graphene film and a pattern. In particular, a graphene oxide ink and a reducing agent ink are individually printed at the same point to induce a chemical reaction on a substrate. The present invention relates to a graphene film and a pattern manufacturing method for forming a graphene film and a pattern at a low cost, thereby rapidly forming a large-area high-performance graphene film and a pattern, and applying the same to an electronic device.
그라핀 필름의 형성에는 크게 세 가지 기술이 있다. 첫 째로, 흑연(graphite)에서 기계적(mechanically)으로 그라핀 층을 박리시키는 기술이다. 이 기술은 가장 최초로 그라핀 층을 형성시키는데 사용되었으나, 재현성 문제, 다량의 그라핀 확보의 어려움 등의 문제가 있기 때문에 실제 소자 제작 공정이나 양산 공정에 적용되기는 어렵다. 두 번째로, 화학적 기상 증착(chemical vapor deposition)을 이용하여 그라핀을 증착시키는 기술이 있다. 이 기술을 이용하면 고성능의 그라핀을 비교적 균일하게 얻을 수 있으나, 기본적으로 진공 공정이기 때문에 비용이 많이 들고 확장성에도 문제가 있다. 세 번째로, 용액상 화학적 방법으로 그라핀 산화물을 생성하여 스핀코팅(spin coating)이나 진공여과법(vacuum filtration) 등을 이용하여 그라핀 산화물 필름을 형성한 다음에 열처리나 화학약품 처리 등의 환원 기법들을 사용하여 그라핀 필름을 얻는 방법이 있다. There are three major techniques for forming the graphene film. Firstly, the graphene layer is mechanically peeled off from the graphite. This technique was used to form the graphene layer for the first time, but it is difficult to be applied to the actual device fabrication process or mass production process because of problems such as reproducibility problems and difficulty in securing a large amount of graphene. Secondly, there is a technique for depositing graphene using chemical vapor deposition. Using this technique, high-performance graphene can be obtained relatively uniformly, but because it is basically a vacuum process, it is expensive and has problems in scalability. Third, graphene oxide is produced by the solution phase chemical method to form the graphene oxide film using spin coating or vacuum filtration, and then reduction technique such as heat treatment or chemical treatment. There is a method of obtaining a graphene film using these.
그라핀 패턴의 형성은 보통 위와 같은 방법들로 그라핀 층을 형성한 다음, 마스크가 될 물질을 그라핀 층 위에 형성한 뒤, 습식 혹은 건식 식각(wet and dry etching) 공정을 적용하여 마스크의 패턴을 따라 그라핀 패턴을 형성한 다음, 마스크가 된 물질을 제거하여 최종적으로 그라핀 패턴을 얻게 된다. The formation of the graphene pattern is generally performed by forming the graphene layer in the same manner as described above, forming a material to be a mask on the graphene layer, and then applying a wet and dry etching process to the pattern of the mask. After forming a graphene pattern, and then removing the masked material to obtain a graphene pattern finally.
그러나, 이러한 그라핀 패턴 형성 기법은 위와 같이 기술한 많은 과정을 거치게 됨으로써 비용이 많이 들고, 그라핀 자체의 특성도 열화될 가능성이 높으며, 재현성 확보도 어려운 단점이 있다. 위와 같은 세 번째 기술인 용액상 그라핀 산화물의 스핀코팅(spin coating)이나 진공여과법(vacuum filtration)을 이용하여도 대면적에 확장성이 용이할 뿐, 그라핀 산화물의 제조에 비용이 많이 들고 위와 같은 식각 공정이 필요하며 위와 같은 열화 문제나 재현성을 극복하기 어려워 고성능 그라핀 패턴을 형성하는 데에는 한계가 있다. However, the graphene pattern formation technique is expensive because it is subjected to many processes described above, the characteristics of the graphene itself is likely to deteriorate, and it is difficult to secure reproducibility. Using the third technique, spin coating or vacuum filtration of solution phase graphene oxide, it is easy to expand to a large area and is expensive to manufacture graphene oxide. There is a limit in forming a high performance graphene pattern because an etching process is required and it is difficult to overcome the above-described deterioration problem or reproducibility.
따라서, 본 발명은 상술한 문제점을 해결하기 위한 것으로서, 본 발명의 목적은, 그라핀 산화물(graphene oxide) 잉크(ink)와 환원제(reducing agent) 잉크를 개별적으로 같은 지점에 인쇄하여 기판상에서 화학반응을 유도함으로써 고성능 그라핀의 제조와 패턴이 동시에 이루어지도록 함으로써, 저비용으로 신속하게 대면적 고성능 그라핀 필름 및 패턴을 형성할 수 있고, 이를 전자소자에 응용할 수 있도록 하기 위한 그라핀 필름 및 패턴 제조 방법을 제공하는 데 있다.Accordingly, the present invention is to solve the above-described problems, an object of the present invention, by printing the graphene oxide (ink) ink and reducing agent ink separately at the same point and chemical reaction on the substrate By producing a high-performance graphene and the pattern to be made at the same time by, to produce a large-area high-performance graphene film and pattern quickly at a low cost, the graphene film and pattern manufacturing method for applying it to an electronic device To provide.
먼저, 본 발명의 특징을 요약하면, 본 발명의 일면에 따른 그라핀 제조 방법은, 그라핀 산화물 잉크와 환원제 잉크를 각각 기판 상에 개별적으로 동일 패턴으로 인쇄하여, 상기 그라핀 산화물 잉크와 상기 환원제 잉크의 반응에 의해 상기 기판 상에 그라핀 필름이나 패턴을 형성하는 것을 특징으로 한다.First, to summarize the features of the present invention, the graphene manufacturing method according to an aspect of the present invention, by printing the graphene oxide ink and the reducing agent ink on the substrate individually in the same pattern, the graphene oxide ink and the reducing agent It is characterized by forming a graphene film or a pattern on the substrate by the reaction of the ink.
상기 기판 상에 상기 그라핀 산화물 잉크와 상기 환원제 잉크의 인쇄를 위하여, 잉크젯 인쇄 수단의 서로 다른 두 노즐을 통해 각각의 잉크를 분사시킬 수 있다.In order to print the graphene oxide ink and the reducing agent ink on the substrate, each ink may be sprayed through two different nozzles of inkjet printing means.
또는, 상기 기판 상에 상기 그라핀 산화물 잉크와 상기 환원제 잉크의 인쇄를 위하여, 스크린 마스크를 이용한 스크린 인쇄 또는 스프레이 인쇄 방식을 이용할 수도 있다.Alternatively, for printing the graphene oxide ink and the reducing agent ink on the substrate, a screen printing or spray printing method using a screen mask may be used.
상기 그라핀 필름이나 패턴을 전자소자의 전극이나 활성층으로 이용할 수 있다.The graphene film or pattern may be used as an electrode or an active layer of an electronic device.
상기 기판은 유리, 반도체 웨이퍼, 유연한 플라스틱, 또는 종이일 수 있다.The substrate may be glass, semiconductor wafer, flexible plastic, or paper.
상기 그라핀 산화물 잉크는 흑연을 산화시킨 뒤 산화 그라핀(oxidized graphene) 파편을 떼어내는 방법으로 제조될 수 있다.The graphene oxide ink may be prepared by oxidizing graphite and then removing oxidized graphene fragments.
상기 산화 그라핀 파편을 떼어내기 위하여 초음파 분해 또는 초음파 처리를 이용할 수 있다.Ultrasonic decomposition or sonication may be used to remove the graphene oxide fragments.
상기 그라핀 산화물 잉크는 물, 에탄올, 메탄올, 아세톤, 에틸렌글리콜 중 하나 또는 복수 혼합물로 이루어진 용매를 포함할 수 있다.The graphene oxide ink may include a solvent consisting of one or a plurality of mixtures of water, ethanol, methanol, acetone, and ethylene glycol.
상기 환원제 잉크는 히드라진(hydrazine), 아스코르브산(ascorbic acid), 철 이온(iron ion), 염산(hydrochloric acid) 중 하나 또는 복수혼합물을 포함할 수 있다.The reducing agent ink may include one or a plurality of mixtures of hydrazine, ascorbic acid, iron ion, hydrochloric acid.
상기 환원제 잉크는 물, 에탄올, 메탄올, 아세톤, 에틸렌글리콜 중 하나 또는 복수 혼합물로 이루어진 용매를 포함할 수 있다.The reducing agent ink may include a solvent consisting of one or a plurality of mixtures of water, ethanol, methanol, acetone, and ethylene glycol.
상기 기판 상에 상기 그라핀 산화물 잉크와 상기 환원제 잉크의 인쇄 중 상기 기판의 온도는 50℃ 내지 200℃ 이내일 수 있다.The temperature of the substrate during printing of the graphene oxide ink and the reducing agent ink on the substrate may be within 50 ℃ to 200 ℃.
상기 전자소자는 표시소자(display device), 태양전지(solar cell), 투명 박막 스피커(thin film speaker), 트랜지스터(transistor), 또는 화학 물질 센서(chemical sensor)일 수 있다.The electronic device may be a display device, a solar cell, a thin film speaker, a transistor, or a chemical sensor.
또한, 본 발명의 다른 일면에 따른, 그라핀 필름은, 그라핀 산화물 잉크와 환원제 잉크를 각각 기판 상에 개별적으로 동일 패턴으로 인쇄하여, 상기 그라핀 산화물 잉크와 상기 환원제 잉크의 반응에 의해 상기 기판 상에 박막 또는 패턴 형태로 형성된 형태일 수 있다.In addition, the graphene film according to another aspect of the present invention, by printing the graphene oxide ink and the reducing agent ink on the substrate individually in the same pattern, the substrate by the reaction of the graphene oxide ink and the reducing agent ink It may be formed in a thin film or pattern form on the.
그리고, 본 발명의 또 다른 일면에 따른, 전자소자는, 그라핀 필름이나 패턴을 전극이나 활성층으로 갖는 전자소자로서, 상기 그라핀 필름이나 패턴은, 기판 상에 그라핀 산화물 잉크와 환원제 잉크가 각각 동일 패턴으로 인쇄되어 상호 반응을 통해 형성된 형태일 수 있다.An electronic device according to another aspect of the present invention is an electronic device having a graphene film or a pattern as an electrode or an active layer, wherein the graphene film or pattern includes graphene oxide ink and a reducing agent ink on a substrate, respectively. The same pattern may be printed and formed through mutual reaction.
본 발명에 따른 그라핀 필름 및 패턴 제조 방법에 따르면, 그라핀 산화물(graphene oxide) 잉크(ink)와 환원제(reducing agent) 잉크를 개별적으로 같은 지점에 인쇄하여 기판상에서 화학반응을 유도함으로써 그라핀이 패턴을 이룬채로 형성되게 할 수 있다. According to the graphene film and the pattern manufacturing method according to the present invention, the graphene oxide (ink) and the reducing agent (ink) by printing the ink at the same point separately to induce a chemical reaction on the substrate It can be formed in a pattern.
이는, 잉크젯 인쇄를 발전시킨 기술이므로 저비용 및 대면적으로의 확장성 등의 장점이 있으며, 신속하게 고성능 그라핀 패턴이 형성되게 할 수 있고, 침전물이나 입자가 없는 완전한 용액상태의 잉크를 이용하기 때문에 기존 잉크젯 기술의 단점으로 지적되어왔던 노즐 막힘 문제 등도 해결될 수 있다. 학계에서 그동안 잉크젯 기술에 관한 연구가 활발히 진행되어 왔음에도 불구하고 여전히 실제 생산 공정에 적용되었다는 사례는 찾기가 쉽지 않은데, 이는 잉크젯 노즐의 막힘 문제와 더불어 비싼 잉크에 기인한 것으로 분석된다. 본 발명의 방법은 이 둘을 동시에 해결함으로써 전자소자 제조 등 전자 산업 분야의 응용에 박차를 가할 수 있을 것으로 기대된다. 또한, 제안된 기술은 그라핀에 국한되지 않으므로 다양한 활용 분야를 찾을 수 있을 것으로 예상된다.This is an advanced technology of inkjet printing, which has advantages such as low cost and large area scalability, and enables high performance graphene patterns to be formed quickly, and because it uses a full solution ink without deposits or particles. The nozzle clogging problem, which has been pointed out as a disadvantage of the conventional inkjet technology, can be solved. Although research on inkjet technology has been actively conducted in academia, it is not easy to find a case that is still applied to the actual production process due to expensive ink along with clogging of inkjet nozzles. The method of the present invention is expected to accelerate the application of the electronic industry, such as electronic device manufacturing by solving both at the same time. In addition, since the proposed technology is not limited to graphene, it is expected that various applications will be found.
도 1은 일반적인 환원전 그라핀 산화물과 환원 후의 그라핀 잉크의 상태를 설명하기 위한 도면이다.1 is a view for explaining the state of the graphene oxide before reduction and the graphene ink after reduction in general.
도 2는 본 발명의 일실시예에 따른 그라핀 필름 및 패턴 제조를 위한 잉크젯 인쇄 방법을 설명하기 위한 도면이다.2 is a view for explaining an inkjet printing method for producing a graphene film and a pattern according to an embodiment of the present invention.
이하 첨부 도면들 및 첨부 도면들에 기재된 내용들을 참조하여 본 발명의 바람직한 실시예를 상세하게 설명하지만, 본 발명이 실시예들에 의해 제한되거나 한정되는 것은 아니다. Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings and the contents described in the accompanying drawings, but the present invention is not limited or limited to the embodiments.
앞서 설명한 바와 같은 용액상 화학적 방법에 의할 때에는, 일반적으로 스핀코팅, 진공여과법, 스프레이(spray), Langmuir-Blodgett 방식 등으로 기판 상에 그라핀 산화물 필름을 형성한 후에 환원처리를 통하여 그라핀 필름을 얻을 수 있다. 하지만 이와 같은 기존 방법으로 얻어지는 그라핀 필름은 기판에 전면적으로 형성된 그라핀 필름으로서, 전자소자의 전극이나 채널 등의 원하는 패턴을 얻기 위해선 앞서 기술한 패터닝 공정이 추가로 필요하다. 이렇게 다수의 공정을 거치게 되면 그라핀 패턴의 질과 성능, 재현성이 떨어지는 것은 물론 비용도 올라가게 된다.According to the solution phase chemical method as described above, the graphene film is formed through reduction treatment after forming a graphene oxide film on the substrate by spin coating, vacuum filtration, spray, Langmuir-Blodgett method, or the like. Can be obtained. However, the graphene film obtained by such a conventional method is a graphene film formed entirely on the substrate, and in order to obtain a desired pattern such as an electrode or a channel of the electronic device, the aforementioned patterning process is additionally required. This multi-step process not only reduces the quality, performance and reproducibility of the graphene pattern, but also increases the cost.
이를 해결하기 위하여, 본 발명에서는 그라핀 산화물 잉크와 환원제 잉크를 개별적으로 기판 상에 인쇄하여 기판 상에서 화학 반응을 일으켜 최종적으로 그라핀 필름 및 패턴을 형성하는 방식을 제안하며, 이는 잉크젯(ink jet) 인쇄나 마스크(mask)를 동반한 스크린 인쇄/스프레이 인쇄 등으로 구현될 수 있으며, 이와 같은 방식의 그라핀 필름 및 패턴은 표시소자(display device), 태양전지(solar cell), 스피커(speaker), 트랜지스터(transistor), 화학 물질 센서(chemical sensor) 등 전자소자의 전극이나 활성층으로 사용될 수 있으며 기타 전자 산업 분야 전반에 응용될 수 있다. In order to solve this problem, the present invention proposes a method in which the graphene oxide ink and the reducing agent ink are separately printed on a substrate to cause a chemical reaction on the substrate to finally form a graphene film and a pattern, which is an ink jet. It may be implemented by screen printing or spray printing with a mask or the like, and the graphene film and pattern in this manner may be used as a display device, a solar cell, a speaker, It may be used as an electrode or an active layer of an electronic device such as a transistor or a chemical sensor, and may be applied to other electronic industries.
기존의 대부분의 연구에서는, 그라핀 자체가 잉크로 안정적으로 존재할 수 없기 때문에, 그라핀 자체 잉크보다는 그라핀 산화물 잉크를 먼저 인쇄하여 필름 및 패턴을 형성한 다음에 열처리나 화학약품 처리를 통하여 그라핀으로 환원시키는 방식을 사용하기도 하였다. 도 1에서 볼 수 있듯이, 그라핀 산화물 잉크를 만든 후에 이를 용액상태 그대로 환원처리하면 그라핀 산화물이 그라핀으로 환원됨과 동시에 침전물(precipitation)로 가라앉게 된다. 이렇게 그라핀이 덩어리지면서(agglomeration) 침전물을 형성하게 되면 잉크젯 인쇄시 수십 μm(마이크로미터) 사이즈의 잉크젯 노즐 막힘(nozzle clogging) 문제의 원인이 될 수 있기 때문에 잉크젯 인쇄에 적용될 수 없다.In most of the existing studies, since graphene itself cannot be stably present in ink, the graphene oxide ink is printed first rather than the graphene itself ink to form a film and a pattern, followed by heat treatment or chemical treatment. It was also used to reduce to. As shown in FIG. 1, when the graphene oxide ink is made and then reduced as it is, the graphene oxide is reduced to graphene and sinks to a precipitate. This agglomeration of the graphene (agglomeration) to form a precipitate can not be applied to inkjet printing because it can cause nozzle clogging problems of inkjet printing of several tens of micrometers (micrometer) size.
도 2는 본 발명의 일실시예에 따른 그라핀 필름 및 패턴 제조를 위한 잉크젯 인쇄 방법을 설명하기 위한 도면이다.2 is a view for explaining an inkjet printing method for producing a graphene film and a pattern according to an embodiment of the present invention.
잉크젯 인쇄 방식은 잉크 용액 분사용 헤드 또는 노즐을 갖는 잉크젯 프린터를 이용하여 기판 상에 잉크를 분사하여 기판에 잉크 패턴을 얻을 수 있는 방식으로서, 잉크젯 인쇄를 통하여 원하는 곳에만 일정 물질의 패턴을 형성할 수 있기 때문에 재료비용이 획기적으로 절감될 수 있고, 기판 크기의 제한이 없기 때문에 대면적으로의 확장이 용이하며, 따라서 그라핀 필름 및 패턴의 형성에 이를 이용하는 방식을 먼저 설명한다. The inkjet printing method is a method of spraying ink onto a substrate by using an inkjet printer having an ink solution ejecting head or a nozzle, thereby obtaining an ink pattern on the substrate. Since the material cost can be drastically reduced, and there is no limitation of the substrate size, it is easy to expand to a large area, and therefore, a method of using the same for forming the graphene film and the pattern will be described first.
본 발명에서 제안하는 새로운 잉크젯 인쇄 기법은 기존 잉크젯 인쇄의 문제점을 해결하기 위해, 도 2와 같이, 서로 다른 두 노즐(A, B)에서 그라핀 산화물 잉크와 환원제 잉크를 각각 기판 상에 분사하여 인쇄하고 기판 상에서 두 용액이 반응을 일으켜 패턴 그대로 그라핀이 형성되도록 하는 방식이다.In order to solve the problems of the conventional inkjet printing, the new inkjet printing technique proposed by the present invention prints by spraying graphene oxide ink and reducing agent ink on the substrate from two different nozzles (A, B), as shown in FIG. The two solutions react on the substrate to form graphene as a pattern.
기존과 같이 그라핀 산화물 잉크와 환원제 잉크를 섞으면 앞서 기술하였듯이 침전물이 생기게 되고, 이 침전물은 잉크젯 노즐 막힘 등의 문제의 원인이 될 수 있기 때문에 잉크젯 인쇄에 적용될 수 없다. 따라서 도 2에서와 같이 그라핀 산화물 잉크와 환원제 잉크를 서로 다른 두 노즐(A, B)에서 분사되도록 인쇄하되 같은 패턴으로 같은 지점에 인쇄하여 기판 상에서 환원반응이 일어나게 하면 노즐 막힘 문제를 해결할 수 있고, 이후에 다른 환원 공정을 필요로 하지 않기 때문에 공정 시간과 비용을 절감할 수 있다.As described above, when the graphene oxide ink and the reducing agent ink are mixed, a precipitate is formed as described above, and the precipitate may not be applied to ink jet printing because it may cause problems such as clogging of the ink jet nozzle. Therefore, as shown in FIG. 2, the graphene oxide ink and the reducing agent ink are printed to be sprayed from two different nozzles A and B, but the same pattern is printed at the same point to reduce the clogging problem on the substrate. In addition, the process time and cost can be saved since no other reduction process is required afterwards.
본 발명의 잉크젯 인쇄 방식을 위하여, 그라핀 산화물 잉크와 환원제 잉크가 각각 담긴 용기들에 결합된 서로 다른 두 노즐(A, B)에서 기판 상에 분사시킬 수 있는 인쇄 수단(예, 프린터 형태)을 이용할 수 있으며, 인쇄 수단은 컴퓨터 등 외부 제어기에 의해 제어를 받되, 미리 프로그램된 명령(예, 기판 상에 패턴을 따라 잉크를 분사시키기 위한 명령)에 따라 제어기는 기판 상의 일정 패턴을 따라 원하는 곳에만 두 노즐(A, B)로 각 잉크를 분사시켜 박막 또는 패턴 형태의 그라핀 필름을 형성할 수 있다. 이와 같은 잉크젯 인쇄를 이용하는 분사방식은 진동을 이용하는 피에조 방식, 열을 이용하는 써멀 방식, 및 버블젯 방식 등 다양한 방식이 이용될 수 있다. For the inkjet printing method of the present invention, printing means (e.g., in the form of a printer) that can be sprayed onto a substrate from two different nozzles A and B coupled to containers containing graphene oxide ink and a reducing agent ink, respectively. The printing means may be controlled by an external controller such as a computer, but according to a pre-programmed command (e.g., a command for ejecting ink along a pattern on the substrate), the controller may be placed only where desired along the pattern on the substrate. Each ink may be sprayed through the nozzles A and B to form a graphene film in the form of a thin film or a pattern. As the jet method using the inkjet printing, various methods such as a piezo method using vibration, a thermal method using heat, and a bubble jet method may be used.
여기서, 각각의 잉크가 두 노즐(A, B)에서 분사되어 기판 상에 같은 패턴으로 같은 지점에 인쇄되어 자체 환원반응으로 그라핀 필름 또는 패턴이 형성되며, 다른 환원 공정이 요구되지 않는다. 여기서, 기판은 유리, 반도체 웨이퍼(wafer), 유연한(flexible) 플라스틱, 종이 등일 수 있으며, 잉크젯 인쇄 중 기판의 온도는 50℃ 내지 200℃ 이내인 것이 바람직하다.Here, each ink is ejected from the two nozzles (A, B) and printed at the same point in the same pattern on the substrate to form a graphene film or pattern by self-reduction reaction, no other reduction process is required. Herein, the substrate may be glass, a semiconductor wafer, a flexible plastic, paper, or the like, and the temperature of the substrate during inkjet printing is preferably within 50 ° C to 200 ° C.
또한, 노즐 A에서 분사되는 그라핀 산화물 잉크는, 흑연을 산화시킨 뒤 산화 그라핀(oxidized graphene) 파편을 초음파 분해 혹은 초음파 처리 방식으로 떼어내는 방법으로 제조된 것일 수 있으며, 상기 그라핀 산화물 잉크에는, 물, 에탄올, 메탄올, 아세톤, 에틸렌글리콜 중 하나 또는 복수 혼합물로 구성된 용매가 포함될 수 있다. In addition, the graphene oxide ink sprayed from the nozzle A may be prepared by oxidizing graphite and then removing oxidized graphene fragments by ultrasonic decomposition or ultrasonic treatment. A solvent composed of one or a plurality of mixtures of water, ethanol, methanol, acetone, and ethylene glycol may be included.
기판에 분사되는 그라핀 산화물 잉크를 환원시키기 위하여 노즐 B에서 분사되는 환원제 잉크는, 히드라진(hydrazine), 아스코르브산(ascorbic acid), 철 이온(iron ion), 염산(hydrochloric acid) 중 하나 또는 복수 혼합물로 구성될 수 있으며, 상기 환원제 잉크에는, 물, 에탄올, 메탄올, 아세톤, 에틸렌글리콜 중 중 하나 또는 복수 혼합물로 구성된 용매가 포함될 수 있다. The reducing agent ink sprayed from the nozzle B to reduce the graphene oxide ink sprayed on the substrate is one or a mixture of hydrazine, ascorbic acid, iron ion, hydrochloric acid. The reducing agent ink may include a solvent composed of one or a plurality of mixtures of water, ethanol, methanol, acetone, and ethylene glycol.
한편, 이와 같은 그라핀 필름 및 패턴을 형성하는 방식은 위와 같은 그라핀 산화물 잉크와 환원제 잉크를 사용하여 마스크(mask)를 동반한 스크린(screen printing) 인쇄/스프레이 인쇄(spray printing) 방식 등으로도 구현될 수 있다. On the other hand, the method of forming such a graphene film and pattern may be screen printing or spray printing with a mask using the graphene oxide ink and the reducing agent ink as described above. Can be implemented.
예를 들어, 기자재나 기판 위에 원하는 일정 패턴으로 뚫린 부분을 갖는 스크린 마스크(screen mask)를 올려 놓고, 스크린 마스크 위에서 그라핀 산화물 잉크와 환원제 잉크를 개별적으로(순차로) 스프레이하여 일정패턴을 기판에 인쇄하거나, 스크린 마스크 위에서 일정 누름 수단으로 누르면서 각 잉크가 마스크의 구멍을 통과에 기판에 일정패턴이 만들어지도록 할 수도 있다. 이에 따라 개별적으로 기판 상에 형성되는 잉크들이 화학 반응을 일으켜 최종적으로, 잉크젯 인쇄와 유사한 박막 또는 패턴 형태의 그라핀 필름을 형성할 수 있다. 다만, 여기서는 잉크젯 방식에서보다 각 잉크의 높은 점도 등의 특성이 요구되므로 먼저 각 잉크의 용매 등을 조절해 각 방식에 맞는 특성을 갖는 잉크가 사용될 필요가 있다. 여기서도 기판의 온도는 50℃ 내지 200℃ 이내일 수 있다.For example, a screen mask having a portion drilled in a desired pattern is placed on a substrate or substrate, and the graphene oxide ink and the reducing agent ink are sprayed separately (sequentially) on the screen mask to apply a predetermined pattern to the substrate. It is also possible to print or press a predetermined pressing means on the screen mask so that a predetermined pattern is made on the substrate as each ink passes through the hole of the mask. Accordingly, the inks formed on the substrate individually may cause a chemical reaction to finally form a graphene film in the form of a thin film or a pattern similar to inkjet printing. However, since the properties such as the high viscosity of each ink is required here than in the inkjet method, it is necessary to first adjust the solvent and the like of each ink to use an ink having a characteristic suitable for each method. Here too, the temperature of the substrate may be within 50 ° C to 200 ° C.
잉크의 점도 등의 특성이 다르기 때문에, 먼저 잉크의 특성을 각 인쇄 기술에 맞춘 후, 스크린 마스크(screen mask) 등을 원하는 기자재 위에 대고 각 잉크를 스크린 인쇄 및 스프레이 인쇄 한 뒤 온도 등을 가하여 기판상에서 반응을 일으켜 원하는 물질을 얻으면 잉크젯 인쇄와 동일한 결과를 가져올 수 있다.Since the characteristics such as viscosity of the ink are different, the characteristics of the ink are first adjusted to each printing technique, and then screen printing and spray printing are applied on the desired equipment by applying a screen mask, etc., and then temperature is applied on the substrate. Reactions to obtain the desired material can produce the same results as inkjet printing.
이와 같이 본 발명에 따른, 그라핀 산화물 잉크와 환원제 잉크를 개별적으로 기판 상에 인쇄하여 기판 상에서 화학 반응을 일으켜 제조되는 그라핀 필름 및 패턴은, 그라핀 특성 상 탄소 원자로 구성된 하나의 층(단원자층)으로 이루어져 sp2 혼성 궤도로 인한 육각망면을 갖는 2차원 박막형태를 갖는다. 그라핀 내부에서는 전자가 유효 질량이 없는 것처럼 이동하여 상온에서도 100,000cm2/V.s를 넘는 매우 높은 전자 이동도를 갖는 것으로 알려져 있다. 따라서, 본 발명에 따라 제조된 그라핀 필름 및 패턴은, 전자 산업 분야 전반에 응용될 수 있다. As described above, the graphene film and the pattern produced by chemically reacting on the substrate by separately printing the graphene oxide ink and the reducing agent ink on the substrate include one layer composed of carbon atoms in terms of graphene properties. It consists of) and has a two-dimensional thin film form with a hexagonal network due to sp 2 hybrid orbit. It is known that inside the graphene, electrons move as if they do not have an effective mass, and have a very high electron mobility exceeding 100,000 cm 2 / Vs even at room temperature. Therefore, the graphene film and pattern produced according to the present invention can be applied throughout the electronic industry.
예를 들어, LCD(Liquid Crystal Display), PDP(Plasma Display Panel), 기타 유기 EL 등의 평판 표시 장치에 투명 전극인 Indium Tin Oxide (ITO)가 많이 사용되고 있으나, 인듐 (indium)의 제한적인 공급으로 인해 시간이 흐를수록 비용이 증가할 수밖에 없기 때문에 현재 다양한 대체 물질들이 연구, 개발되고 있다. 따라서, 이러한 투명 전극은 높은 전도도를 가지고 얇은 박막으로 형성될 수 있는 본 발명의 그라핀 필름이나 패턴으로 대체될 수 있다. 이외에도 태양전지(solar cell)나 투명 박막 스피커(thin film speaker) 등 투명 전극이 요구되는 분야에 본 발명의 그라핀 필름 및 패턴이 적용될 수 있다.For example, indium tin oxide (ITO), which is a transparent electrode, is widely used in flat panel displays such as liquid crystal displays (LCDs), plasma display panels (PDPs), and other organic ELs, but is limited in supply of indium. As a result, cost increases over time, and various alternative materials are currently being researched and developed. Therefore, this transparent electrode can be replaced with the graphene film or pattern of the present invention that can be formed into a thin thin film with high conductivity. In addition, the graphene film and the pattern of the present invention may be applied to a field requiring a transparent electrode such as a solar cell or a transparent thin film speaker.
또한, 예를 들어, 위와 같이 제안된 기술로 형성된 그라핀 필름 및 패턴은, 그 그라핀이 환원되는 정도에 따라 반도체의 성질도 가질 수 있으므로, 박막 트랜지스터 (thin film transistor; TFT), 화학 물질 센서(chemical sensor) 등 전자소자의 전극이나 활성층(active layer)(혹은 채널층)으로 사용될 수도 있다. In addition, for example, the graphene film and the pattern formed by the proposed technique as described above may also have the properties of the semiconductor depending on the degree of the graphene reduction, thin film transistor (TFT), chemical sensor It may be used as an electrode or an active layer (or channel layer) of an electronic device such as a chemical sensor.
이상과 같이 본 발명은 비록 한정된 실시예와 도면에 의해 설명되었으나, 본 발명은 상기의 실시예에 한정되는 것은 아니며, 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다. As described above, the present invention has been described by way of limited embodiments and drawings, but the present invention is not limited to the above embodiments, and those skilled in the art to which the present invention pertains various modifications and variations from such descriptions. This is possible.
예를 들어, 본 발명에 따라 그라핀 필름 및 패턴을 형성하기 위하여, 그라핀 산화물 잉크와 환원제 잉크를 개별적으로 기판 상에 인쇄하고 기판 상에서 화학 반응이 일어나도록 하는 방식을 사용하였지만, 이러한 방식은 그라핀 필름 및 패턴을 형성하기 위하여서만 사용되는 것은 아니고, 다양한 분야에서 고분자막 등 다양한 박막이나 패턴을 형성하기 위하여 유사하게 적용이 가능할 것이다. For example, in order to form the graphene film and pattern according to the present invention, a method of printing the graphene oxide ink and the reducing agent ink separately on a substrate and allowing a chemical reaction to occur on the substrate is used. Not only used to form the pin film and pattern, it will be similarly applicable to form various thin films or patterns, such as polymer film in various fields.
그러므로, 본 발명의 범위는 설명된 실시예에 국한되어 정해져서는 아니 되며, 후술하는 특허청구범위뿐 아니라 이 특허청구범위와 균등한 것들에 의해 정해져야 한다.Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below but also by the equivalents of the claims.

Claims (14)

  1. 그라핀 산화물 잉크와 환원제 잉크를 각각 기판 상에 개별적으로 동일 패턴으로 인쇄하여,By printing the graphene oxide ink and the reducing agent ink on the substrate individually in the same pattern,
    상기 그라핀 산화물 잉크와 상기 환원제 잉크의 반응에 의해 상기 기판 상에 그라핀 필름이나 패턴을 형성하는 것을 특징으로 하는 그라핀 제조 방법.Forming a graphene film or pattern on the substrate by the reaction of the graphene oxide ink and the reducing agent ink.
  2. 제1항에 있어서,The method of claim 1,
    상기 기판 상에 상기 그라핀 산화물 잉크와 상기 환원제 잉크의 인쇄를 위하여, 잉크젯 인쇄 수단의 서로 다른 두 노즐을 통해 각각의 잉크를 분사하는 것을 특징으로 하는 그라핀 제조 방법.And each ink is sprayed through two different nozzles of an inkjet printing means to print the graphene oxide ink and the reducing agent ink on the substrate.
  3. 제1항에 있어서,The method of claim 1,
    상기 기판 상에 상기 그라핀 산화물 잉크와 상기 환원제 잉크의 인쇄를 위하여, 스크린 인쇄 또는 스프레이 인쇄 방식을 이용하는 것을 특징으로 하는 그라핀 제조 방법.In order to print the graphene oxide ink and the reducing ink on the substrate, a graphene manufacturing method characterized in that using a screen printing or spray printing method.
  4. 제1항에 있어서,The method of claim 1,
    상기 그라핀 필름이나 패턴을 전자소자의 전극이나 활성층으로 이용하기 위한 것을 특징으로 하는 그라핀 제조 방법.Graphene production method characterized in that for using the graphene film or pattern as an electrode or an active layer of the electronic device.
  5. 제1항에 있어서,The method of claim 1,
    상기 기판은 유리, 반도체 웨이퍼, 유연한 플라스틱, 또는 종이인 것을 특징으로 하는 그라핀 제조 방법.The substrate is a graphene manufacturing method, characterized in that the glass, semiconductor wafer, flexible plastic, or paper.
  6. 제1항에 있어서,The method of claim 1,
    상기 그라핀 산화물 잉크는 흑연을 산화시킨 뒤 산화 그라핀(oxidized graphene) 파편을 떼어내는 방식으로 제조된 것을 특징으로 하는 그라핀 제조 방법.The graphene oxide ink is a graphene manufacturing method, characterized in that the oxidized graphene (oxidized graphene) fragments produced by the method of removing the fragments.
  7. 제6항에 있어서,The method of claim 6,
    상기 산화 그라핀 파편을 떼어내기 위하여 초음파 분해 또는 초음파 처리를 이용하는 것을 특징으로 하는 그라핀 제조 방법.Method for producing a graphene, characterized in that the use of ultrasonic decomposition or sonication to remove the graphene oxide fragments.
  8. 제6항에 있어서,The method of claim 6,
    상기 그라핀 산화물 잉크는 물, 에탄올, 메탄올, 아세톤, 에틸렌글리콜 중 하나 또는 복수 혼합물로 이루어진 용매를 포함하는 것을 특징으로 하는 그라핀 제조 방법.The graphene oxide ink is a graphene manufacturing method comprising a solvent consisting of one or a plurality of mixtures of water, ethanol, methanol, acetone, ethylene glycol.
  9. 제1항에 있어서,The method of claim 1,
    상기 환원제 잉크는 히드라진(hydrazine), 아스코르브산(ascorbic acid), 철 이온(iron ion), 염산(hydrochloric acid) 중 하나 또는 복수혼합물을 포함하는 것을 특징으로 하는 그라핀 제조 방법.The reducing agent ink is one of hydrazine, ascorbic acid (ascorbic acid), iron ions (iron ion), hydrochloric acid (hydrochloric acid) or a mixture of graphene, characterized in that it comprises a plurality of mixtures.
  10. 제9항에 있어서,The method of claim 9,
    상기 환원제 잉크는 물, 에탄올, 메탄올, 아세톤, 에틸렌글리콜 중 하나 또는 복수 혼합물로 이루어진 용매를 포함하는 것을 특징으로 하는 그라핀 제조 방법.The reducing agent ink is a graphene manufacturing method comprising a solvent consisting of one or a plurality of mixtures of water, ethanol, methanol, acetone, ethylene glycol.
  11. 제1항에 있어서,The method of claim 1,
    상기 기판 상에 상기 그라핀 산화물 잉크와 상기 환원제 잉크의 인쇄 중 상기 기판의 온도는 50℃ 내지 200℃ 이내인 것을 특징으로 하는 그라핀 제조 방법.The temperature of the substrate during the printing of the graphene oxide ink and the reducing agent ink on the substrate, characterized in that within 50 ℃ to 200 ℃.
  12. 제4항에 있어서,The method of claim 4, wherein
    상기 전자소자는 표시소자(display device), 태양전지(solar cell), 투명 박막 스피커(thin film speaker), 트랜지스터(transistor), 또는 화학 물질 센서(chemical sensor)인 것을 특징으로 하는 그라핀 제조 방법.The electronic device may be a display device, a solar cell, a thin film speaker, a transistor, or a chemical sensor.
  13. 그라핀 산화물 잉크와 환원제 잉크를 각각 기판 상에 개별적으로 동일 패턴으로 인쇄하여,By printing the graphene oxide ink and the reducing agent ink on the substrate individually in the same pattern,
    상기 그라핀 산화물 잉크와 상기 환원제 잉크의 반응에 의해 상기 기판 상에 박막 또는 패턴 형태로 형성된 그라핀 필름.A graphene film formed in a thin film or pattern form on the substrate by the reaction of the graphene oxide ink and the reducing agent ink.
  14. 그라핀 필름이나 패턴을 전극이나 활성층으로 갖는 전자소자로서, As an electronic device having a graphene film or a pattern as an electrode or an active layer,
    상기 그라핀 필름이나 패턴은, 기판 상에 그라핀 산화물 잉크와 환원제 잉크가 각각 동일 패턴으로 인쇄되어 상호 반응을 통해 형성된 것을 특징으로 하는 전자소자.The graphene film or the pattern, the electronic device, characterized in that the graphene oxide ink and the reducing agent ink is printed on the substrate in the same pattern and formed through mutual reaction.
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