WO2013012195A3 - Method for manufacturing substrate and method or manufacturing electronic device using same - Google Patents

Method for manufacturing substrate and method or manufacturing electronic device using same Download PDF

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Publication number
WO2013012195A3
WO2013012195A3 PCT/KR2012/005466 KR2012005466W WO2013012195A3 WO 2013012195 A3 WO2013012195 A3 WO 2013012195A3 KR 2012005466 W KR2012005466 W KR 2012005466W WO 2013012195 A3 WO2013012195 A3 WO 2013012195A3
Authority
WO
WIPO (PCT)
Prior art keywords
forming
metal layer
manufacturing
substrate
electronic device
Prior art date
Application number
PCT/KR2012/005466
Other languages
French (fr)
Korean (ko)
Other versions
WO2013012195A2 (en
Inventor
이종람
유철종
김기수
손준호
Original Assignee
포항공과대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 포항공과대학교 산학협력단 filed Critical 포항공과대학교 산학협력단
Publication of WO2013012195A2 publication Critical patent/WO2013012195A2/en
Publication of WO2013012195A3 publication Critical patent/WO2013012195A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Abstract

The present invention relates to a method for significantly reduce manufacturing cost of an electronic device by selectively forming a nano-dimple on a metal layer that is patterned at a low cost. The method, according to the present invention comprises the steps of: (a) forming the metal layer on a substrate; (b) forming a mask layer, which is provided with a predetermined pattern, on the metal layer; (c) forming a metal oxide having self-alignment nano-holes on the metal layer, which is exposed, by submerging the substrate in an acid solution and applying a voltage; and (d) forming the nano-dimple on the metal layer by removing the metal oxide by means of etching.
PCT/KR2012/005466 2011-07-19 2012-07-10 Method for manufacturing substrate and method or manufacturing electronic device using same WO2013012195A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20110071331A KR101243635B1 (en) 2011-07-19 2011-07-19 Method of manufacturing a substrate and method of manufacturing an electronic device using the same
KR10-2011-0071331 2011-07-19

Publications (2)

Publication Number Publication Date
WO2013012195A2 WO2013012195A2 (en) 2013-01-24
WO2013012195A3 true WO2013012195A3 (en) 2013-03-14

Family

ID=47558573

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005466 WO2013012195A2 (en) 2011-07-19 2012-07-10 Method for manufacturing substrate and method or manufacturing electronic device using same

Country Status (2)

Country Link
KR (1) KR101243635B1 (en)
WO (1) WO2013012195A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10767143B2 (en) 2014-03-06 2020-09-08 Sage Electrochromics, Inc. Particle removal from electrochromic films using non-aqueous fluids
KR101585788B1 (en) * 2014-08-28 2016-01-15 주식회사 포스코 Method for manufacturing substrate for electronic device and thin film solar cell
KR101651341B1 (en) * 2014-12-02 2016-08-26 한양대학교 에리카산학협력단 method of fabricating superhydrophobic metal structure
KR101683796B1 (en) * 2015-06-11 2016-12-08 한국과학기술연구원 Method for curing polymer by using intense pulsed white light and method for manufacturing organic thin film transistor using the same
KR101785468B1 (en) * 2016-02-05 2017-10-16 호서대학교 산학협력단 Method of manufacturing semiconductor thin film transistor and semiconductor thin film transistor manufactured by the method
WO2018236785A1 (en) * 2017-06-20 2018-12-27 Board Of Trustees Of The University Of Arkansas Method of forming high surface area metal oxide nanostructures and applications of same
CN107622974A (en) * 2017-08-28 2018-01-23 武汉华星光电半导体显示技术有限公司 The preparation method of TFT substrate and the preparation method of TFT display devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080110709A (en) * 2007-06-16 2008-12-19 고려대학교 산학협력단 Method for manufacturing hybrid nano-imprint mask and method for manufacturing electro-device using the same
KR20090005889A (en) * 2007-07-10 2009-01-14 호서대학교 산학협력단 Method for fabricating nano particle
KR20100002486A (en) * 2008-06-30 2010-01-07 서울옵토디바이스주식회사 Patterned substrate and nitride based semiconductor layer fabrication method
KR20110034710A (en) * 2009-09-29 2011-04-06 광주과학기술원 Method of forming pattern

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080110709A (en) * 2007-06-16 2008-12-19 고려대학교 산학협력단 Method for manufacturing hybrid nano-imprint mask and method for manufacturing electro-device using the same
KR20090005889A (en) * 2007-07-10 2009-01-14 호서대학교 산학협력단 Method for fabricating nano particle
KR20100002486A (en) * 2008-06-30 2010-01-07 서울옵토디바이스주식회사 Patterned substrate and nitride based semiconductor layer fabrication method
KR20110034710A (en) * 2009-09-29 2011-04-06 광주과학기술원 Method of forming pattern

Also Published As

Publication number Publication date
KR101243635B1 (en) 2013-03-15
KR20130010603A (en) 2013-01-29
WO2013012195A2 (en) 2013-01-24

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