WO2013008512A1 - Matériau de photopile semi-conducteur composite et photopile l'utilisant - Google Patents

Matériau de photopile semi-conducteur composite et photopile l'utilisant Download PDF

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WO2013008512A1
WO2013008512A1 PCT/JP2012/060951 JP2012060951W WO2013008512A1 WO 2013008512 A1 WO2013008512 A1 WO 2013008512A1 JP 2012060951 W JP2012060951 W JP 2012060951W WO 2013008512 A1 WO2013008512 A1 WO 2013008512A1
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solar cell
compound semiconductor
selenide
metal
group
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PCT/JP2012/060951
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English (en)
Japanese (ja)
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尚起 吉本
宮本　真
雅人 針替
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株式会社日立製作所
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Definitions

  • the present invention relates to a compound semiconductor solar cell material having a core-shell structure and a solar cell using the same.
  • Solar cells using inorganic compounds have a high light absorption intensity, and can be used to obtain sufficient light absorption even when thinned.
  • a compound semiconductor having a chalcopyrite type crystal structure such as CuInSe2 (hereinafter referred to as CIS) made of copper indium selenium, CuInGaSe2 (hereinafter referred to as CIGS) made of copper indium gallium selenium, and the like are excellent solar cell materials.
  • CIS and CIGS solar cells can be formed into a thin film by a printing process using fine particle dispersed ink as a raw material.
  • a conventional large-scale apparatus such as vapor deposition or sputtering is not required, and the entire manufacturing process can be simplified, so that the manufacturing cost can be reduced.
  • the melting point of CIS and CIGS crystals reaches close to 1000 ° C., even when a fine particle dispersed ink is prepared, the particles are not sufficiently fused with each other, and as a result, a phenomenon such as film peeling tends to occur.
  • a metal selenide for example, copper selenide (for example, the characteristic formula Cu2Se) and indium selenide (for example, the characteristic expression In2Se3) are mixed, and the diffusion and reaction of copper and indium which are metal elements are reacted.
  • a uniform CIS thin film has been formed using a thermochemical reaction utilizing selenium rich in nature (Patent Document 1).
  • thermochemical reaction there is also a method in which a thin film is formed with ink prepared by dispersing fine particles of metal oxide and thermochemical reaction is performed with hydrogen selenide gas (Patent Document 2).
  • Patent Document 2 the reactivity of selenization can be made uniform by using gas reaction, but hydrogen selenide gas is toxic, and the reaction is caused by the complicated equipment design for ensuring safety and the difference in element diffusion coefficient. Cannot be solved.
  • a compound semiconductor having a chalcopyrite structure formed by using a printing process has been difficult to form a uniform thin film without compositional segregation due to a mismatch in diffusion coefficient of elements and a problem of thermochemical reaction of selenization.
  • the object of the present invention is to prevent segregation of a low resistance Group I metal selenide even when a Group I metal (such as Cu) selenide and Group III metal (such as In) selenide are used.
  • An object of the present invention is to provide a compound semiconductor solar cell material capable of forming a uniform thin film and a high-efficiency solar cell using the same.
  • a group III metal selenide in the form of fine particles disposed in the center, and a group I metal selenide formed so as to cover the surface of the group III metal selenide The compound semiconductor solar cell material is characterized in that a chalcopyrite crystal structure can be expressed by heating.
  • a solar cell comprising a substrate and a compound semiconductor layer having a chalcopyrite crystal structure formed by heating an ink containing the compound semiconductor solar cell material on the substrate.
  • a substrate a first electrode provided on the substrate, a compound including a group I metal, a group III metal, and selenium provided on the first electrode and having a chalcopyrite crystal structure, and the group I metal
  • a material for a compound semiconductor solar battery capable of forming a uniform thin film without composition segregation of a selenide of a low resistance group I metal (such as Cu) and a high-efficiency solar battery using the same.
  • the present invention has a selenide of a group III metal such as indium selenide at the center to obtain a thin film having a chalcopyrite crystal structure, and the outer periphery thereof is selenide. It was found that the uniformity of the reaction can be obtained by preparing ink with fine particles integrated with a core / shell structure coated with copper fluoride.
  • a thin film having a chalcopyrite crystal structure is composed of four elements, for example, copper indium gallium selenium CuInGaSe2, the alloy selenide of indium gallium is at the center and the outer periphery is coated with copper selenide.
  • the produced ink can be produced to obtain a solar cell.
  • a chalcopyrite structure has a structure in which crystals of a group III metal selenide are mixed. With this structure, it is possible to efficiently react copper selenide that causes a short circuit into the chalcopyrite structure.
  • the present invention defines raw materials necessary for producing a thin film solar cell made of a compound semiconductor having a chalcopyrite crystal structure in a printing process, and has the effect of producing a compound semiconductor having high-performance semiconductor physical properties. Further, manufacturing advantages such as simplification of the manufacturing process and effective use of raw materials by printing can be obtained.
  • the solar cell produced by the present invention can reduce the content of copper selenide that causes a short circuit as compared with conventional products, and has an effect of obtaining a highly efficient solar cell.
  • FIG. 1 is an example of a cross-sectional view of fine particles of a compound semiconductor solar cell material having a core / shell structure according to the present embodiment.
  • the radius of the entire fine particle is represented by r2
  • the radius of the core portion 101 is represented by r1.
  • the core part 101 is a selenide of a group III metal, and examples thereof include indium selenide including In 2 Se 3.
  • Indium selenide forms a composition ratio such as InSe or In3Se7 in addition to In2Se3, but is not limited to a specific composition ratio.
  • the energy level can be controlled by the composition ratio of the group III metal element.
  • the composition ratio of the group III metal element For example, when using a selenide in which gallium is added at an arbitrary ratio in addition to indium such as InGaSe3, Higher performance solar cells can be produced.
  • the shell part 102 can use a selenide containing a group I metal such as copper selenide.
  • group I metal silver and an alloy of copper and silver can be used in addition to copper, and there is no particular limitation as long as it is a group I metal.
  • the radius r1 of the core portion and the radius r2 of the entire fine particle are defined by the density of the substance used and the molar ratio of Group I metal to Group III metal.
  • Core-shell fine particles used in this example a fine group III-group metal selenide disposed in the center and a group I metal selenide formed over the surface of the group III metal selenide) ) Is used to produce a solar cell, the compound semiconductor layer having a chalcopyrite crystal structure preferably forms a p-type semiconductor.
  • a compound semiconductor having a chalcopyrite crystal structure has a molar ratio of copper to group III metal (Cu / III group metal ratio) of 0.6 or more and less than 1.0, and more preferably 0.7 or more and 0.9 or less.
  • a p-type semiconductor is shown. Even if the molar ratio of copper to group III metal (Cu / group III metal ratio) is less than 0.6, the function of the solar cell is satisfied. Therefore, r1 / r2 may be defined so that this molar ratio can be realized.
  • the shell thickness d2 may be designed such that, for example, the average particle diameter of the core, which is indium selenide, is used, and the copper selenide constituting the shell is completely segregated without compositional segregation.
  • composition segregation of a selenide of a low resistance group I metal that has conventionally caused a short circuit does not occur.
  • Indium selenide is surrounded by CIS, and only CIS is in contact with the electrode, so that the resistance can be reduced.
  • Indium selenide is surrounded by CIS and does not come into contact with the electrode, so it may remain unreacted (composition segregation).
  • the optimum value of r1 / r2 is defined as 0.843.
  • the optimum value of r1 / r2 is defined as 0.786.
  • the optimum ratio of r1 / r2 is 0.7 or more and less than 1.0.
  • r2 corresponding to the radius of the entire fine particle is 100 nm or less, and more preferably 50 nm or less.
  • the film thickness of the light absorption layer of the thin film solar cell formed in this example is 5 ⁇ m or less, and the fine particle radius r2 is 1/25 or less of the thin film thickness in consideration of the filling structure of fine particles and the fusion between the fine particles.
  • 1/100 or less is more desirable.
  • the size of the fine particles varies. Variations in the radius r2 of the entire fine particles in the system affect the filling structure of the fine particles, so that a better quality thin film can be formed when the variation is smaller. Based on this requirement, various syntheses have been proposed in which the variation in the fine particle radius is reduced.
  • the fine particles used in this example may follow these synthesis methods, and there are no restrictions on the raw material synthesis.
  • the shell formation corresponds to the surface area of the fine particles, so even if there are variations in the fine particle radius in the system, Correspondingly, it is possible to coat the shell material with a uniform wall thickness.
  • Fine particles having a core / shell structure can be obtained by washing fine particles coated with copper selenide with alcohol such as methanol and repeating fine particle precipitation by centrifugation.
  • the ink is prepared by dispersing the synthesized fine particles according to this example in various solvents.
  • Ink can be produced by dispersing the synthesized fine particles in a solvent that is easy to disperse.
  • the solvent include alcohols such as ethanol, 2-propanol, and 1-butanol, and aromatics such as toluene and p-xylene. It is selected in consideration of the viscosity and boiling point of the solvent, volatility, wettability with the fine particle interface, and the like.
  • the solvent is not particularly limited as long as it satisfies these conditions, and other solvents than those described can be applied.
  • the group I metal such as Cu
  • the group III metal selenide having a low resistance
  • a compound semiconductor solar cell material capable of forming a uniform thin film without segregation of selenide composition can be provided.
  • Example 2 a method for manufacturing a solar battery cell using the fine particles of the compound semiconductor solar battery material having the core-shell structure described in Example 1 and its features will be described. Note that the matters described in the first embodiment but not described in the present embodiment can be applied to the present embodiment as long as there is no particular circumstance.
  • FIG. 2 shows a schematic cross-sectional view of the solar cell according to this example.
  • the schematic diagram shown in FIG. 2 is an example of the embodiment, and is not limited to the configuration of FIG.
  • reference numeral 201 denotes a substrate
  • reference numeral 202 denotes a metal electrode
  • reference numeral 203 denotes a compound semiconductor layer having a chalcopyrite crystal structure
  • reference numeral 204 denotes a buffer layer
  • reference numeral 205 denotes a non-doped zinc oxide layer
  • reference numeral 206 denotes a transparent electrode.
  • FIG. 3 schematically shows a production flow chart for forming FIG.
  • a manufacturing method will be described with reference to the flowchart of FIG.
  • the back electrode of the solar cell is composed of a substrate 201 and a metal electrode 202. Since it is effective to dope the compound semiconductor layer having a chalcopyrite crystal structure with sodium element, a substrate 201 such as a stainless substrate or a polyimide substrate coated with soda lime glass or sodium silicate is used. In this example, a stainless steel substrate coated with soda lime glass was used. Since a sintering process is involved in forming a compound semiconductor layer having a chalcopyrite crystal structure, a material having high heat resistance is desirable.
  • the metal electrode 202 is placed in contact with the substrate 201.
  • a material that secures adhesion to the compound semiconductor layer 203 having a chalcopyrite crystal structure and is excellent in durability even when the surface of the metal electrode is selenized is desirable, such as molybdenum. Also in this example, molybdenum was used.
  • a p-type compound semiconductor layer 203 having a chalcopyrite crystal structure in contact with the metal electrode 202 is formed.
  • the thickness of the compound semiconductor layer 203 is 1 ⁇ m, but can be 1 to 3 ⁇ m.
  • the compound semiconductor layer 203 is first printed by various methods using the ink shown in Example 1 as a precursor. Examples of the printing method include screen, blade coating, gravure, ink jet, and slit coating, but there is no particular limitation. In this embodiment, it is formed by a screen printing method. The printed ink is dried until the solvent is volatilized and then sintered. Examples of the sintering method include infrared lamp heating and heating wire heating, but are not particularly limited. In this example, an infrared lamp was used. The sintering temperature is adjusted between 400 ° C. and 700 ° C. depending on the metal selenide of the ink material.
  • the buffer layer 204 that defines a junction structure (pn junction or pin junction) with the compound semiconductor layer 203 is formed.
  • the buffer layer 204 can be formed by an existing method such as a solution growth method (Chemical Bath Deposition, CBD).
  • Materials such as cadmium sulfide CdS, indium sulfide InS, and zinc sulfide / zinc hydroxide mixture ZnS ⁇ Zn (OH) 2 can be selected in consideration of consistency with the energy level of the compound semiconductor layer 203, and the thickness is about 50 nm. Is desirable. In this embodiment, cadmium sulfide is used.
  • the non-doped zinc oxide layer 205 is placed in contact with the buffer layer by an existing method such as sputtering or solution growth. It is installed for preventing a short circuit with the transparent electrode 206, and there is no particular limitation as long as the thickness is 100 nm or less.
  • the transparent electrode 206 can be prepared by sputtering an existing material such as ITO.
  • the thickness of the transparent electrode is not particularly limited as long as a sufficiently low electric resistance can be realized as an electrode, but is generally between 300 nm and 500 nm.
  • a solar cell produced using ink containing fine particles having a core / shell structure by the above production method is completed.
  • a highly efficient solar cell could be obtained without short-circuiting.
  • a peak indicating the presence of a selenide of a group III metal is obtained in addition to the chalcopyrite structure.
  • indium selenide in the core portion is dispersed in the thin film of chalcopyrite crystal formed. Since this core part remains, it becomes possible to produce a solar cell that completely consumes low resistance copper selenide and prevents a short circuit of the cell. Thereby, the manufacturing yield of a solar cell can be improved significantly.
  • this solar cell can be manufactured at low cost, it can also be applied to consumer use.
  • a high efficiency solar cell is obtained by using fine particles of a compound semiconductor solar cell material having a group III metal selenide as a core and a group I metal selenide as a shell. Can be provided.
  • this invention is not limited to the above-mentioned Example, Various modifications are included.
  • the above-described embodiments have been described in detail for easy understanding of the present invention, and are not necessarily limited to those having all the configurations described.
  • a part of the configuration of a certain embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of a certain embodiment.
  • 101 Core portion containing group III metal selenide, 102... Shell part containing group I metal selenide, 201 ... substrate, 202 ... Metal electrode, 203 ... Compound semiconductor layer having chalcopyrite crystal structure, 204 ... buffer layer, 205 ... non-doped zinc oxide layer, 206: Transparent electrode.

Abstract

L'invention porte sur un matériau de photopile semi-conducteur composite qui permet la formation d'une couche mince plane sans la ségrégation compositionnelle de séléniures de métaux du groupe I de faible résistance, même lorsque des séléniures de métaux du groupe I (Cu ou similaire) et des séléniures de métaux du groupe III (In ou similaire) sont utilisés, et sur une photopile à haut rendement utilisant le matériau, le matériau de photopile semi-conducteur composite, pouvant former une structure cristalline chalcopyrite par chauffage, comprenant un séléniure de métal du groupe III (section noyau (101)), disposé dans une section centrale et ayant une forme de microparticule, et un séléniure de métal du groupe I (section enveloppe (102)), formé afin de recouvrir la surface du séléniure de métal du groupe III.
PCT/JP2012/060951 2011-07-08 2012-04-24 Matériau de photopile semi-conducteur composite et photopile l'utilisant WO2013008512A1 (fr)

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JP2011-151458 2011-07-08
JP2011151458A JP2013021043A (ja) 2011-07-08 2011-07-08 化合物半導体太陽電池材料およびそれを用いた太陽電池

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JP6099435B2 (ja) * 2013-03-05 2017-03-22 シャープ株式会社 コアシェル粒子、光電変換層および光電変換素子
KR101619933B1 (ko) * 2013-08-01 2016-05-11 주식회사 엘지화학 태양전지 광흡수층 제조용 3층 코어-쉘 나노 입자 및 이의 제조 방법
WO2015016651A1 (fr) * 2013-08-01 2015-02-05 주식회사 엘지화학 Précurseur de phase d'agrégat pour fabriquer une couche d'absorption de lumière de cellule solaire et son procédé de fabrication

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637342A (ja) * 1992-05-19 1994-02-10 Matsushita Electric Ind Co Ltd カルコパイライト型化合物の製造方法
JPH11340482A (ja) * 1998-05-15 1999-12-10 Internatl Solar Electric Technol Inc 化合物半導体フィルムおよび関連電子装置の製造方法
WO2008013383A1 (fr) * 2006-07-24 2008-01-31 Lg Chem, Ltd. Procédé de préparation de composés cis et d'une couche fine, et cellule solaire munie d'une couche fine de composés cis
JP2009507369A (ja) * 2005-09-06 2009-02-19 エルジー・ケム・リミテッド 太陽電池吸収層の製造方法
WO2010087484A1 (fr) * 2009-02-02 2010-08-05 学校法人龍谷大学 Procédé pour produire un film mince semi-conducteur à composé, cellule solaire et agent de revêtement à utiliser dans la production dudit film mince semi-conducteur à composé

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637342A (ja) * 1992-05-19 1994-02-10 Matsushita Electric Ind Co Ltd カルコパイライト型化合物の製造方法
JPH11340482A (ja) * 1998-05-15 1999-12-10 Internatl Solar Electric Technol Inc 化合物半導体フィルムおよび関連電子装置の製造方法
JP2009507369A (ja) * 2005-09-06 2009-02-19 エルジー・ケム・リミテッド 太陽電池吸収層の製造方法
WO2008013383A1 (fr) * 2006-07-24 2008-01-31 Lg Chem, Ltd. Procédé de préparation de composés cis et d'une couche fine, et cellule solaire munie d'une couche fine de composés cis
WO2010087484A1 (fr) * 2009-02-02 2010-08-05 学校法人龍谷大学 Procédé pour produire un film mince semi-conducteur à composé, cellule solaire et agent de revêtement à utiliser dans la production dudit film mince semi-conducteur à composé

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