WO2012171149A1 - Polysilicon reducing furnace - Google Patents
Polysilicon reducing furnace Download PDFInfo
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- WO2012171149A1 WO2012171149A1 PCT/CN2011/001756 CN2011001756W WO2012171149A1 WO 2012171149 A1 WO2012171149 A1 WO 2012171149A1 CN 2011001756 W CN2011001756 W CN 2011001756W WO 2012171149 A1 WO2012171149 A1 WO 2012171149A1
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- chassis
- cooling water
- mixed gas
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
Definitions
- the invention relates to a polysilicon reduction furnace, in particular to a novel 36-bar polysilicon reduction furnace, belonging to the field of solar photovoltaic.
- the main process technology for producing polycrystalline silicon at home and abroad is the "Siemens Improvement Method": after the purified high-purity trichlorosilane is mixed with hydrogen in a ratio, it is passed into a polysilicon reduction furnace at a certain temperature and pressure. The deposition reaction on the high temperature silicon core generates polycrystalline silicon, and the reaction temperature is controlled at about 1080 degrees Celsius to finally form a rod-shaped polycrystalline silicon product.
- the main equipment for producing polycrystalline silicon by "Siemens Improvement Method” is 12 pairs of rods, 18 pairs of rods and 24 pairs of rod reduction furnaces. Since the reaction temperature of the surface of the silicon core in the reduction furnace is as high as 1080 degrees Celsius, and the material resistance of the equipment is limited, The equipment needs to be cooled by jacket water, but the equipment of 12 pairs of rods, 18 pairs of rods and 24 pairs of rod reduction furnaces is small, the heat energy utilization rate is not very high, the production polysilicon consumes a large amount of electricity, and the production cost is high. .
- the polycrystalline silicon reduction furnace provided by the invention can increase the output of a single reduction furnace, improve the utilization of energy in the furnace by improving the arrangement of electrodes, and reduce the power consumption of producing polycrystalline silicon.
- a polysilicon reduction furnace comprising a furnace body and a chassis, a mixed gas inlet pipe, a mixed gas outlet pipe and a silicon rod, wherein the chassis is provided with electrodes, and the electrodes are arranged in a regular polygonal manner.
- the silicon rod is connected to the electrode.
- the electrodes are 36 pairs (i.e., 72).
- the electrodes are arranged in an equilateral triangle, or in a square arrangement, or in a hexagonal arrangement.
- the regular polygons of the electrodes share one side with adjacent regular polygons.
- the mixed gas intake pipes are arranged on the chassis in a regular hexagonal manner; when the electrodes are arranged in a square shape When the mixed gas intake pipes are arranged in a square manner on the chassis; when the electrodes are arranged in a regular hexagon, the mixed gas intake pipes are arranged in an equilateral triangle manner On the chassis, and the mixed gas intake pipe is located at the center of a regular polygon composed of the electrodes.
- the mixed gas outlet pipe is evenly distributed on the chassis in a concentric manner.
- the furnace body is a bell-type double-layer furnace body.
- a spiral baffle is welded between the furnace tube and the jacket of the bell-type double-layer furnace body, the baffle plate and the jacket and the furnace The barrel forms a spiral flow path.
- the furnace body is disposed on the chassis, and the furnace body is provided with a furnace body cooling water inlet pipe and a furnace body cooling water outlet pipe.
- the furnace cooling water inlet pipe and the furnace cooling water outlet pipe are located at both ends of the spiral flow path.
- a chassis cooling water inlet pipe and a chassis cooling water outlet pipe are disposed on the chassis.
- the process gas can be uniformly diffused to the surface of the silicon rod located at the apex of the polygon.
- the gas inlet pipes are arranged in a regular polygonal manner so that the gas field diffused from the various directions to the surface of the silicon rod is uniform.
- the electrodes are distributed in a regular polygon, and the energy radiated from each electrode is substantially flat. The silicon rods absorb each other's lost energy, and the temperature of the silicon rod is more easily maintained and controlled.
- the silicon rods absorb heat radiation from each other, and the average heat absorption of each silicon rod by the inner surface of the furnace is greatly reduced. Since the number of electrodes is increased to 36 pairs, the output of the single reduction furnace is also greatly increased. The power consumption per kilogram of polysilicon is greatly reduced, and the overall production cost and energy consumption of polycrystalline silicon are correspondingly reduced.
- FIG. 1 is a schematic view showing the structure of a polycrystalline silicon reduction furnace of the present invention.
- Fig. 2 is a schematic view showing the arrangement of the electrodes of the polycrystalline silicon reduction furnace of the present invention in an equilateral triangle arrangement.
- Fig. 3 is a schematic view showing the electrode of the polycrystalline silicon reduction furnace of the present invention in a square arrangement.
- Fig. 4 is a schematic view showing the arrangement of the electrodes of the polycrystalline silicon reduction furnace of the present invention in a regular hexagonal arrangement.
- the present invention includes a chassis 1, a furnace body 2, an electrode 3, a mixed gas intake pipe 4, a mixed gas outlet pipe 5, a furnace cooling water inlet pipe 6, a furnace cooling water outlet pipe 7, and a chassis cooling water.
- the mixed gas intake pipes 4 are arranged on the chassis 1 in a regular hexagonal manner and at the center of an equilateral triangle composed of the electrodes 3; the mixed gas outlet pipes 5 are evenly distributed on the chassis 1 in a concentric manner.
- the chassis 1 is further provided with a chassis cooling water inlet pipe 8 and a chassis cooling water outlet pipe 9 for introducing cooling water to cool the surface of the chassis 1.
- the furnace body 2 is placed on the chassis 1 , and a spiral baffle 10 is connected between the furnace tube and the jacket 11 on the furnace body 2, and a spiral flow path is formed between the three, and the cooling water inlet pipe of the furnace body 6 and the furnace cooling water outlet pipe 7 introduces cooling water into the flow passage to cool the furnace body.
- Fig. 1 and Fig. 3 thirty-six pairs of electrodes 3 are closely arranged on the chassis 1 in a plurality of square manners, and any square shares an edge with the adjacent square.
- the mixed gas intake pipes 4 are arranged in a square manner on the chassis 1 and at the center of a square composed of the electrodes 3; the mixed gas outlet pipes 5 are evenly distributed on the chassis 1 in a concentric manner.
- Fig. 1 and Fig. 3 thirty-six pairs of electrodes 3 are closely arranged on the chassis 1 in a plurality of regular hexagons, and any regular hexagons share an edge with the adjacent regular hexagons.
- the mixed gas inlet pipes 4 are arranged on the chassis 1 in an equilateral triangle manner and at the center of the regular hexagon formed by the electrodes 3; the mixed gas outlet pipes 5 are evenly distributed on the chassis 1 in a concentric manner.
- the working process of the present invention is:
- the mixed gas enters the furnace from the mixed gas intake pipe 4, and since it is located at the center of the regular polygon composed of the electrodes 3, the mixed gas is uniformly diffused to the surface of the silicon rod 12 located at the apex of the polygon, and the mixed gas is After the surface of the silicon rod 12 reacts to form polycrystalline silicon, it exits the furnace body 2 from the mixed gas outlet pipe 5. Due to the uniform polygonal arrangement of the electrode 3 and the mixed gas inlet pipe 4, the gas field in the furnace is uniform, and the number of the electrodes 3 is increased to 36 pairs, so as to increase the single furnace output and absorb the heat radiation between the silicon rods 10, thereby effectively reducing the polysilicon. Comprehensive production costs and energy consumption.
Abstract
Polysilicon reducing furnace is mainly composed of a base plate, a furnace body, electrodes, mixed gas charging pipes, mixed gas discharging pipes, a furnace body-cooling water charging pipe, a furnace body-cooling water discharging pipe, a base plate-cooling water charging pipe, a base plate-cooling water discharging pipe and silicon rods. Since the mixed gas charging pipes are arranged in the centers of the regular polygons composed by the electrodes, process gas can uniformly diffuse to the surfaces of the silicon rods on the vertices of the polygons. The electrodes are arranged in regular polygons such that the energies radiated mutually by each electrode basically keep the balance and lost energies are mutually absorbed by the silicon rods, thus the temperature of the silicon rods can be readily maintained and controlled. The average heat radiation of each silicon rod absorbed by the inner surface of the furnace body is enormously reduced because of the absorptions of heat radiation among the silicon rods one another. The yield of single reducing furnace is greatly enhanced because the amount of the silicon rods is increased to 36 pairs. The electricity consumption of each kilogram polysilicon is reduced, thus the comprehensive production cost and the energy consumption of the polysilicon are correspondingly reduced.
Description
多晶硅还原炉 Polysilicon reduction furnace
技术领域 Technical field
本发明涉及一种多晶硅还原炉， 尤其涉及一种新型 36对棒的多晶硅还原炉， 属太阳能 光伏领域。 The invention relates to a polysilicon reduction furnace, in particular to a novel 36-bar polysilicon reduction furnace, belonging to the field of solar photovoltaic.
背景技术 Background technique
目前， 国内外生产多晶硅的主要工艺技术是"西门子改良法"： 用提纯后的高纯三氯氢硅 与氢气按比例混合后， 在一定的温度和压力下通入多晶硅还原炉内， 在通电高温硅芯上进行 沉积反应生成多晶硅， 反应温度控制在 1080摄氏度左右， 最终生成棒状多晶硅产品。 At present, the main process technology for producing polycrystalline silicon at home and abroad is the "Siemens Improvement Method": after the purified high-purity trichlorosilane is mixed with hydrogen in a ratio, it is passed into a polysilicon reduction furnace at a certain temperature and pressure. The deposition reaction on the high temperature silicon core generates polycrystalline silicon, and the reaction temperature is controlled at about 1080 degrees Celsius to finally form a rod-shaped polycrystalline silicon product.
目前采用 "西门子改良法" 生产多晶硅的主要设备为 12对棒、 18对棒、 24对棒还原炉， 由于还原炉内硅芯表面反应温度高达 1080摄氏度左右， 而设备材质耐受温度有限， 故需要用 夹套水对设备进行冷却， 但是 12对棒、 18对棒、 24对棒还原炉的设备直径较小， 热能利用率 还不是很高， 生产多晶硅耗电量较大， 生产成本较高。 At present, the main equipment for producing polycrystalline silicon by "Siemens Improvement Method" is 12 pairs of rods, 18 pairs of rods and 24 pairs of rod reduction furnaces. Since the reaction temperature of the surface of the silicon core in the reduction furnace is as high as 1080 degrees Celsius, and the material resistance of the equipment is limited, The equipment needs to be cooled by jacket water, but the equipment of 12 pairs of rods, 18 pairs of rods and 24 pairs of rod reduction furnaces is small, the heat energy utilization rate is not very high, the production polysilicon consumes a large amount of electricity, and the production cost is high. .
发明内容 Summary of the invention
本发明提供的多晶硅还原炉， 能够提高单台还原炉产量， 通过改善电极排布方式提高对 炉内能量的利用率， 降低生产多晶硅的电耗。 The polycrystalline silicon reduction furnace provided by the invention can increase the output of a single reduction furnace, improve the utilization of energy in the furnace by improving the arrangement of electrodes, and reduce the power consumption of producing polycrystalline silicon.
本发明主要通过以下技术方案实现： 多晶硅还原炉， 包括炉体和底盘、 混合气进气管、 混合气出气管及硅棒， 所述底盘上设有电极， 所述电极以正多边形方式排列， 所述电极上连 接有所述硅棒。 The present invention is mainly achieved by the following technical solutions: a polysilicon reduction furnace comprising a furnace body and a chassis, a mixed gas inlet pipe, a mixed gas outlet pipe and a silicon rod, wherein the chassis is provided with electrodes, and the electrodes are arranged in a regular polygonal manner. The silicon rod is connected to the electrode.
作为本发明的一种优选方案， 所述电极为 36对 （即 72根）。 As a preferred embodiment of the present invention, the electrodes are 36 pairs (i.e., 72).
作为本发明的一种优选方案， 所述电极为正三角形排列方式， 或者正方形排列方式， 或 者 ιΗ六边形排列方式。 As a preferred embodiment of the present invention, the electrodes are arranged in an equilateral triangle, or in a square arrangement, or in a hexagonal arrangement.
作为本发明的一种优选方案， 所述电极的正多边形均与相邻的正多边形共用一条边。 作为本发明的一种优选方案， 当所述电极为正三角形排布时， 所述混合气进气管之间按 正六边形方式排布在所述的底盘上； 当所述电极为正方形排布时， 所述混合气进气管之间按 正方形方式排布在所述的底盘上； 当所述电极为正六边形排布时， 所述混合气进气管之间按 正三角形方式排布在所述的底盘上， 且所述混合气进气管位于由所述电极组成的正多边形的 中心。 As a preferred embodiment of the present invention, the regular polygons of the electrodes share one side with adjacent regular polygons. As a preferred embodiment of the present invention, when the electrodes are arranged in an equilateral triangle, the mixed gas intake pipes are arranged on the chassis in a regular hexagonal manner; when the electrodes are arranged in a square shape When the mixed gas intake pipes are arranged in a square manner on the chassis; when the electrodes are arranged in a regular hexagon, the mixed gas intake pipes are arranged in an equilateral triangle manner On the chassis, and the mixed gas intake pipe is located at the center of a regular polygon composed of the electrodes.
作为本发明的一种优选方案， 所述混合气出气管按同心圆方式均匀分布在所述底盘上。 作为本发明的一种优选方案， 所述炉体为钟罩式双层炉体。 As a preferred embodiment of the present invention, the mixed gas outlet pipe is evenly distributed on the chassis in a concentric manner. As a preferred embodiment of the present invention, the furnace body is a bell-type double-layer furnace body.
作为本发明的一种优选方案， 所述钟罩式双层炉体的炉筒与夹套之间上焊接有螺旋形的 导流板,所述导流板与所述夹套和所述炉筒形成螺旋形的流道。
作为本发明的一种优选方案， 所述炉体罩在底盘之上， 所述炉体上设置有炉体冷却水进 水管和炉体冷却水出水管。 As a preferred embodiment of the present invention, a spiral baffle is welded between the furnace tube and the jacket of the bell-type double-layer furnace body, the baffle plate and the jacket and the furnace The barrel forms a spiral flow path. As a preferred embodiment of the present invention, the furnace body is disposed on the chassis, and the furnace body is provided with a furnace body cooling water inlet pipe and a furnace body cooling water outlet pipe.
作为本发明的一种优选方案， 所述炉体冷却水进水管和炉体冷却水出水管位于螺旋形流 道的两端。 ， As a preferred embodiment of the present invention, the furnace cooling water inlet pipe and the furnace cooling water outlet pipe are located at both ends of the spiral flow path. ,
作为本发明的一种优选方案， 所述底盘上设置底盘冷却水进水管和底盘冷却水出水管。 本发明多晶硅还原炉， 因混合气进气管均设置在 ώ电极组成的正多边形的中心， 使得工 艺气体能够均勾的扩散到位于多边形顶点的硅棒表面上。 混合气进气管之间按正多边形方式 排列， 使得从各个方向上扩散到硅棒表面的气场很均匀。 电极采用正多边形分布， 各电极之 间互相辐射的能量基本持平， 硅棒之间互相吸收散失的能量， 硅棒的温度更容易得到维持与 控制。 于硅棒互相吸收热辐射， 平均每根硅棒被炉体内表面吸收的热辐射大大减少， 由于 电极数量增加到 36对， 单台还原炉的产量也大幅度提升。 每公斤多晶硅的电耗大大降低， 多 晶硅的综合生产成本和能耗也相应降低。 As a preferred embodiment of the present invention, a chassis cooling water inlet pipe and a chassis cooling water outlet pipe are disposed on the chassis. In the polycrystalline silicon reduction furnace of the present invention, since the mixture gas inlet pipes are disposed at the center of the regular polygon composed of the yttrium electrodes, the process gas can be uniformly diffused to the surface of the silicon rod located at the apex of the polygon. The gas inlet pipes are arranged in a regular polygonal manner so that the gas field diffused from the various directions to the surface of the silicon rod is uniform. The electrodes are distributed in a regular polygon, and the energy radiated from each electrode is substantially flat. The silicon rods absorb each other's lost energy, and the temperature of the silicon rod is more easily maintained and controlled. The silicon rods absorb heat radiation from each other, and the average heat absorption of each silicon rod by the inner surface of the furnace is greatly reduced. Since the number of electrodes is increased to 36 pairs, the output of the single reduction furnace is also greatly increased. The power consumption per kilogram of polysilicon is greatly reduced, and the overall production cost and energy consumption of polycrystalline silicon are correspondingly reduced.
附图说明 DRAWINGS
图 1是本发明多晶硅还原炉的结构示意图。 1 is a schematic view showing the structure of a polycrystalline silicon reduction furnace of the present invention.
图 2是本发明多晶硅还原炉的电极采用正三角形排布方式的示意图。 Fig. 2 is a schematic view showing the arrangement of the electrodes of the polycrystalline silicon reduction furnace of the present invention in an equilateral triangle arrangement.
图 3是本发明多晶硅还原炉的电极采用正方形排布方式的示意图。 Fig. 3 is a schematic view showing the electrode of the polycrystalline silicon reduction furnace of the present invention in a square arrangement.
图 4是本发明多晶硅还原炉的电极采用正六边形排布方式的示意图。 Fig. 4 is a schematic view showing the arrangement of the electrodes of the polycrystalline silicon reduction furnace of the present invention in a regular hexagonal arrangement.
附图标记： 1.底盘， 2.炉体， 3.电极， 4.混合气进气管， 5.混合气出气管， 6.炉体冷却 水进水管， 7.炉体冷却水出水管， 8.底盘冷却水进水管， 9.底盘冷却水出水管， 10.夹套， 11. 导流板， 12.硅棒。 LIST OF REFERENCE NUMERALS: 1. chassis, 2. furnace body, 3. electrode, 4. mixed gas inlet pipe, 5. mixed gas outlet pipe, 6. furnace cooling water inlet pipe, 7. furnace cooling water outlet pipe, 8 . Chassis cooling water inlet pipe, 9. chassis cooling water outlet pipe, 10. jacket, 11. deflector, 12. silicon rod.
具体实施方式 detailed description
下面结合附图对本发明多晶硅还原炉做进一歩详细介绍。 The polysilicon reduction furnace of the present invention will be described in detail below with reference to the accompanying drawings.
实施例 1 Example 1
如图 1所示， 本发明包括底盘 1、 炉体 2、 电极 3、 混合气进气管 4、 混合气出气管 5、 炉体 冷却水进水管 6、 炉体冷却水出水管 7、 底盘冷却水进水管 8、 底盘冷却水出水管 9、 夹套 10、 导流板 11、 及硅棒 12， 电极 3为三十六对（即 72根）， 电极 3上连接有用于导电并沉积多晶硅的 硅棒 12。 As shown in FIG. 1, the present invention includes a chassis 1, a furnace body 2, an electrode 3, a mixed gas intake pipe 4, a mixed gas outlet pipe 5, a furnace cooling water inlet pipe 6, a furnace cooling water outlet pipe 7, and a chassis cooling water. The inlet pipe 8, the chassis cooling water outlet pipe 9, the jacket 10, the deflector 11, and the silicon rod 12, the electrode 3 is thirty-six pairs (ie, 72), and the electrode 3 is connected with silicon for conducting and depositing polysilicon. Stick 12.
请结合图 2， 三十六对电极 3以数个正三角形方式紧密排布在底盘 1上， 任意 ΙΗ三角形均与 相邻的正三角形共用一条边。 混合气进气管 4之间按正六边形方式排布在底盘 1上， 且位于由 电极 3组成的正三角形的中心； 混合气出气管 5按同心圆方式均匀分布在底盘 1上。
底盘 1上还设置有底盘冷却水进水管 8和底盘冷却水出水管 9， 以导入冷却水对底盘 1表面 进行冷却。 炉体 2罩在底盘 1上， 炉体 2上的炉筒与夹套 11之间悍接有螺旋形的导流板 10, 三者 之间形成螺旋形的流道， 炉体冷却水进水管 6和炉体冷却水出水管 7向流道中导入冷却水对炉 体进行冷却。 Referring to FIG. 2, thirty-six pairs of electrodes 3 are closely arranged on the chassis 1 in a plurality of equilateral triangles, and any of the ΙΗ triangles share an edge with the adjacent regular triangles. The mixed gas intake pipes 4 are arranged on the chassis 1 in a regular hexagonal manner and at the center of an equilateral triangle composed of the electrodes 3; the mixed gas outlet pipes 5 are evenly distributed on the chassis 1 in a concentric manner. The chassis 1 is further provided with a chassis cooling water inlet pipe 8 and a chassis cooling water outlet pipe 9 for introducing cooling water to cool the surface of the chassis 1. The furnace body 2 is placed on the chassis 1 , and a spiral baffle 10 is connected between the furnace tube and the jacket 11 on the furnace body 2, and a spiral flow path is formed between the three, and the cooling water inlet pipe of the furnace body 6 and the furnace cooling water outlet pipe 7 introduces cooling water into the flow passage to cool the furnace body.
实施例 2 Example 2
请结合图 1、 图 3， 三十六对电极 3以数个正方形方式紧密排布在底盘 1上， 任意正方形均 与相邻的正方形共用一条边。 混合气进气管 4之间按正方形方式排布在底盘 1上， 且位于由电 极 3组成的正方形的中心； 混合气出气管 5按同心圆方式均匀分布在底盘 1上。 Referring to Fig. 1 and Fig. 3, thirty-six pairs of electrodes 3 are closely arranged on the chassis 1 in a plurality of square manners, and any square shares an edge with the adjacent square. The mixed gas intake pipes 4 are arranged in a square manner on the chassis 1 and at the center of a square composed of the electrodes 3; the mixed gas outlet pipes 5 are evenly distributed on the chassis 1 in a concentric manner.
实施例 3 Example 3
请结合图 1、 图 3， 三十六对电极 3以数个正六边形方式紧密排布在底盘 1上， 任意正六边 形均与相邻的正六边形共用一条边。 混合气进气管 4之间按正三角形方式排布在底盘 1上， 且 位于 电极 3组成的正六边形的中心； 混合气出气管 5按同心圆方式均匀分布在底盘 1上。 Referring to Fig. 1 and Fig. 3, thirty-six pairs of electrodes 3 are closely arranged on the chassis 1 in a plurality of regular hexagons, and any regular hexagons share an edge with the adjacent regular hexagons. The mixed gas inlet pipes 4 are arranged on the chassis 1 in an equilateral triangle manner and at the center of the regular hexagon formed by the electrodes 3; the mixed gas outlet pipes 5 are evenly distributed on the chassis 1 in a concentric manner.
本发明的工作过程是： 混合气体从混合气进气管 4进入炉内， 由于其位于电极 3组成的正 多边形的中心， 混合气体均匀的扩散到位于多边形顶点的硅棒 12表面上， 混合气体在硅棒 12 表面反应生成多晶硅后， 从混合气体出气管 5离开炉体 2。 由于电极 3与混合气进气管 4的均勾 正多边形排布使得炉内气场均匀， 电极 3数量增多至 36对， 以提升单炉产量以及硅棒 10之间互 相吸收热辐射， 有效降低多晶硅的综合生产成本和能耗。
The working process of the present invention is: The mixed gas enters the furnace from the mixed gas intake pipe 4, and since it is located at the center of the regular polygon composed of the electrodes 3, the mixed gas is uniformly diffused to the surface of the silicon rod 12 located at the apex of the polygon, and the mixed gas is After the surface of the silicon rod 12 reacts to form polycrystalline silicon, it exits the furnace body 2 from the mixed gas outlet pipe 5. Due to the uniform polygonal arrangement of the electrode 3 and the mixed gas inlet pipe 4, the gas field in the furnace is uniform, and the number of the electrodes 3 is increased to 36 pairs, so as to increase the single furnace output and absorb the heat radiation between the silicon rods 10, thereby effectively reducing the polysilicon. Comprehensive production costs and energy consumption.
Claims
1.多晶硅还原炉， 包括炉体和底盘、 混合气进气管、 混合气出气管及硅棒， 其特征在于， 所 述底盘上设有电极， 所述电极以正多边形方式排列， 所述电极上连接有所述硅棒。 A polysilicon reduction furnace comprising a furnace body and a chassis, a mixed gas inlet pipe, a mixed gas outlet pipe and a silicon rod, wherein the chassis is provided with electrodes, and the electrodes are arranged in a regular polygonal manner, the electrodes The silicon rod is attached.
2.根据权利要求 1所述的多晶硅还原炉， 其特征在于， 所述电极为 36对。 The polycrystalline silicon reduction furnace according to claim 1, wherein the electrodes are 36 pairs.
3.根据权利要求 1所述的多晶硅还原炉， 其特征在于， 所述电极为正三角形排列方式， 或者 正方形排列方式， 或者正六边形排列方式。 The polycrystalline silicon reduction furnace according to claim 1, wherein the electrodes are in an equilateral triangle arrangement, or a square arrangement, or a regular hexagon arrangement.
4.根据权利要求 1所述的多晶硅还原炉， 其特征在于， 所述电极的正多边形均与相邻的正多 边形共用一条边。 The polycrystalline silicon reduction furnace according to claim 1, wherein each of the regular polygons of the electrode shares an edge with an adjacent regular polygon.
5.根据权利要求 3所述的多晶硅还原炉， 其特征在于， 当所述电极为正三角形排布时， 所述 混合气进气管之间按正六边形方式排布在所述的底盘上； 当所述电极为正方形排布时， 所述 混合气进气管之间按 JH方形方式排布在所述的底盘上； 当所述电极为正六边形排布时， 所述 混合气进气管之间按正三角形方式排布在所述的底盘上， 且所述混合气进气管位于由所述电 极组成的正多边形的中心。 The polysilicon reduction furnace according to claim 3, wherein when the electrodes are arranged in an equilateral triangle, the mixed gas intake pipes are arranged on the chassis in a regular hexagonal manner; When the electrodes are arranged in a square shape, the mixed gas intake pipes are arranged on the chassis in a JH square manner; when the electrodes are arranged in a regular hexagon, the mixed gas intake pipes are Arranged in an equiangular manner on the chassis, and the mixed gas intake pipe is located at the center of a regular polygon composed of the electrodes.
6.根据权利要求 1所述的多晶硅还原炉， 其特征在于， 所述混合气出气管按同心圆方式均匀 分布在所述底盘上。 The polycrystalline silicon reduction furnace according to claim 1, wherein the mixed gas outlet pipe is uniformly distributed on the chassis in a concentric manner.
7.根据权利要求 1所述的多品硅还原炉， 其特征在于， 所述炉体为钟罩式双层炉体。 The multi-product silicon reduction furnace according to claim 1, wherein the furnace body is a bell-type double-layer furnace body.
8. 根据权利要求 7所述的多晶硅还原炉，其特征在于， 所述钟罩式双层炉体上的炉筒与夹套 之间焊接有螺旋形的导流板， 所述导流板、 所述夹套及所述炉筒之间形成螺旋形的流道。 The polycrystalline silicon reduction furnace according to claim 7, wherein a spiral baffle is welded between the furnace tube and the jacket on the bell-type double-layer furnace body, and the baffle plate, A spiral flow path is formed between the jacket and the furnace.
9.根据权利要求 1所述的多晶硅还原炉， 其特征在于， 所述炉体罩在底盘之上， 所述炉体上 设置有炉体冷却水进水管和炉体冷却水出水管。 The polysilicon reduction furnace according to claim 1, wherein the furnace body is placed on a chassis, and the furnace body is provided with a furnace cooling water inlet pipe and a furnace cooling water outlet pipe.
10.根据权利要求 7所述的多晶硅还原炉， 其特征在于， 所述炉体罩在底盘之上， 所述炉体上 设置有炉体冷却水进水管和炉体冷却水出水管。 The polycrystalline silicon reduction furnace according to claim 7, wherein the furnace body is placed on a chassis, and the furnace body is provided with a furnace cooling water inlet pipe and a furnace cooling water outlet pipe.
1 1.根据权利要求 10所述的多晶硅还原炉， 其特征在于， 所述炉体冷却水进水管和炉体冷却 水出水管位于螺旋形流道的两端。 The polycrystalline silicon reduction furnace according to claim 10, wherein the furnace cooling water inlet pipe and the furnace cooling water outlet pipe are located at both ends of the spiral flow path.
12.根据权利要求 1所述的多晶硅还原炉，其特征在于， 所述底盘上设置底盘冷却水进水管和 底盘冷却水出水管。 The polycrystalline silicon reduction furnace according to claim 1, wherein the chassis is provided with a chassis cooling water inlet pipe and a chassis cooling water outlet pipe.
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| CN 201110158979 CN102249241B (en) | 2011-06-14 | 2011-06-14 | Polycrystalline silicon reduction furnace |
| CN201110158979.1 | 2011-06-14 |
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| CN113375058A (en) * | 2021-06-15 | 2021-09-10 | 新疆硅基新材料创新中心有限公司 | Tail gas emission structure and reduction furnace |
| DE102022116233A1 (en) | 2021-07-05 | 2023-01-05 | Shin-Etsu Chemical Co., Ltd. | APPARATUS FOR MAKING POLYSILICON ROD AND METHOD FOR MAKING POLYSILICON ROD |
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