WO2012169147A1 - 光半導体パッケージおよびその製造方法 - Google Patents
光半導体パッケージおよびその製造方法 Download PDFInfo
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- WO2012169147A1 WO2012169147A1 PCT/JP2012/003521 JP2012003521W WO2012169147A1 WO 2012169147 A1 WO2012169147 A1 WO 2012169147A1 JP 2012003521 W JP2012003521 W JP 2012003521W WO 2012169147 A1 WO2012169147 A1 WO 2012169147A1
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- Prior art keywords
- resin
- optical semiconductor
- semiconductor package
- lead
- reflector
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 118
- 230000003287 optical effect Effects 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 131
- 239000011347 resin Substances 0.000 claims abstract description 131
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 41
- 229920006337 unsaturated polyester resin Polymers 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229920002050 silicone resin Polymers 0.000 claims description 18
- 239000003822 epoxy resin Substances 0.000 claims description 14
- 229920000647 polyepoxide Polymers 0.000 claims description 14
- 238000001746 injection moulding Methods 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000003365 glass fiber Substances 0.000 claims description 11
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 11
- 125000003118 aryl group Chemical group 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 7
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 4
- 230000006866 deterioration Effects 0.000 abstract description 31
- 239000000463 material Substances 0.000 abstract description 9
- 229920006305 unsaturated polyester Polymers 0.000 abstract description 6
- 229920005992 thermoplastic resin Polymers 0.000 description 18
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 238000002845 discoloration Methods 0.000 description 8
- 238000001721 transfer moulding Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
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- 238000010521 absorption reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000272168 Laridae Species 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention relates to an optical semiconductor package in which a lead is held by a resin and an optical semiconductor element mounting area is provided on the lead, a manufacturing method thereof, and an optical semiconductor device.
- the optical semiconductor package is formed of a plurality of leads and a resin that holds the leads.
- the lead is divided into a lead for mounting the optical semiconductor element and one or a plurality of leads that function as external terminals and are electrically connected to terminals of the mounted optical semiconductor element.
- a reflector is formed so as to surround at least an optical semiconductor element mounting region.
- This reflector may use the same resin as the resin that holds the leads or a different resin, but it reflects the light emitted by the optical semiconductor element and improves the light emission efficiency of the light emitted from the optical semiconductor device. It is provided for the purpose of making it happen. Therefore, at least the reflector is generally made of a thermoplastic resin having a high light reflectance (see, for example, Patent Document 1).
- an optical semiconductor package has been manufactured by injection molding because the viscosity of the thermoplastic resin is high and the fluidity is low.
- the mold temperature is about 150 ° C. to 200 ° C.
- the temperature of the resin before injection is about 300 ° C. to 330 ° C.
- the resin is injected, the resin is cooled in the mold, and the resin is cured. It was.
- the thermoplastic resin has a high water absorption rate of about 3% to 1%, and the thermoplastic resin is hydrolyzed in a state of absorbing moisture. Therefore, the thermoplastic resin is dried in advance. From injection molding.
- the reflector is formed of a thermoplastic resin
- the thermoplastic resin when the light emitting operation is performed for a long time, the thermoplastic resin is denatured and discolored by ultraviolet rays contained in the emitted light, and the reflectance is increased with use. It had the problem of lowering.
- polyamide 50% to 70% aromatic component, 10% to 40% titanium oxide, and 10% to 20% glass fiber are added. In this case, the resin was discolored by causing the optical semiconductor device to emit light at 150 ° C. for 1000 hours, and the reflectance was reduced to 70% or less.
- an object of the present invention is to suppress deterioration of resin and suppress a decrease in reflectance of emitted light.
- an optical semiconductor package of the present invention includes a first lead having an optical semiconductor element mounting region on a main surface, and a connection region of a conductive material used for conduction with the optical semiconductor element on the main surface.
- a holding resin that holds the first lead and the second lead, and the holding resin exposed at least around the mounting region is a thermosetting resin. It is characterized by being.
- it further includes a reflector formed on the main surface of the first lead and the second lead by opening at least the mounting region and the connection region, and the reflector is a thermosetting resin. good.
- thermosetting resin is a resin not containing an aromatic component.
- thermosetting resin may be any one of an epoxy resin, a silicone resin, and a modified silicone resin.
- thermosetting resin is preferably a cycloaliphatic epoxy resin.
- thermosetting resin is an unsaturated polyester resin.
- a filler made of glass fiber and spherical silica is added to the unsaturated polyester resin.
- titanium oxide is added to the unsaturated polyester resin.
- a filler composed of glass fibers and spherical silica, titanium oxide, and an arbitrary additive are added to the unsaturated polyester resin, the component ratio of the unsaturated polyester resin is A, the component ratio of the glass fiber is B, and the oxidation
- the titanium component ratio is C
- the silica component ratio is D
- the method for manufacturing an optical semiconductor package of the present invention is a method for manufacturing the optical semiconductor package, the step of placing the first lead and the second lead in a mold, The holding resin or the reflector is transferred and molded, and the thermosetting resin is cured, and the thermosetting resin is an epoxy resin or a cyclic aliphatic resin. It is a type epoxy resin.
- the method for manufacturing an optical semiconductor package of the present invention is a method for manufacturing the optical semiconductor package, the step of placing the first lead and the second lead in a mold, A step of injecting the thermosetting resin into the holding resin or the reflector and a step of curing the thermosetting resin, wherein the thermosetting resin is a silicone resin, a modified silicone resin or It is an unsaturated polyester resin.
- the mold is held at 150 ° C. to 200 ° C., and the thermosetting resin is heated to 50 ° C. to 90 ° C. to flow into or inject into the mold.
- the optical semiconductor device of the present invention includes the optical semiconductor package, the optical semiconductor element mounted in the mounting region, and the conductive material that electrically connects a terminal of the optical semiconductor element and the connection region. And a lens formed on the main surface of the first lead and the second lead so as to cover at least the optical semiconductor element and the conductive material.
- the optical semiconductor device of the present invention includes the optical semiconductor package, the optical semiconductor element mounted in the mounting region, and the conductive material that electrically connects a terminal of the optical semiconductor element and the connection region. And a translucent resin that seals the optical semiconductor element and the conductive material in the opening of the reflector.
- thermosetting resin is preferably an epoxy resin, a cycloaliphatic epoxy resin, a silicone resin, a modified silicone resin or an unsaturated polyester resin.
- thermosetting resin such as unsaturated polyester as the resin exposed around the reflector or the optical semiconductor element, it is possible to suppress the deterioration of the resin and suppress the reduction of the reflectance.
- 6A and 6B illustrate a structure of an optical semiconductor package including a reflector according to Embodiment 1.
- 2A and 2B illustrate a configuration of an optical semiconductor package that does not include a reflector according to Embodiment 1.
- Cross-sectional process diagram illustrating a method of manufacturing an optical semiconductor package by transfer molding Process sectional drawing which shows the manufacturing method of the optical semiconductor package by injection molding Sectional drawing which shows the structure of the optical semiconductor device of this invention
- FIG. 1A and 1B are diagrams for explaining the configuration of an optical semiconductor package including a reflector according to Embodiment 1
- FIG. 1A is a plan view
- FIG. 1B is a cross-sectional view taken along line XX ′ in FIG.
- FIG. 2A and 2B are diagrams illustrating the configuration of an optical semiconductor package that does not include a reflector according to the first embodiment.
- FIG. 2A is a plan view
- FIG. 2B is a cross-sectional view taken along line XX ′ in FIG.
- the optical semiconductor package used in the optical semiconductor device includes leads 1 and 2 that are external terminals, a holding resin 20 that holds the leads 1 and 2, and a reflector 5.
- the lead 1 functions as an external terminal, and includes a mounting area 3 for mounting an optical semiconductor element on the main surface.
- the lead 2 includes one or a plurality of leads, and functions as an external terminal, and includes a connection region 4 that is electrically connected to a terminal of the optical semiconductor element on each main surface.
- the reflector 5 has a function of reflecting light emitted from the optical semiconductor element in the emission direction of the optical semiconductor device.
- the mounting area 3 of the lead 1 and the connection area 4 of the lead 2 are opened, and the mounting area 3 and the connection area 4 of the leads 1 and 2 are provided so as to surround the mounting area 3 and the connection area 4. Formed on top.
- the reflector 5 since the reflector 5 reflects emitted light, it is necessary to increase at least the reflectance inside the opening.
- the optical semiconductor package can be configured such that no reflector is formed as shown in FIG. That is, the resin 6 is formed around the lead 1 including the mounting region 3 and the lead 2 including the connection region 4 so as to hold the lead 1 and the lead 2 while being electrically separated from each other. Then, it is necessary to increase the reflectance of the portion of the resin 6 exposed at least around the mounting region 3.
- ceramics have been used for the reflector 5 or the like as a material having high light reflectivity and high resistance to deterioration.
- ceramics have a high material cost, and lead insertion, thermal resistance There was a problem that it was difficult to lower the value.
- a feature of the optical semiconductor package in Embodiment 1 is that the reflector 5 or the resin 6 is formed of a thermosetting resin.
- thermoplastic resin is a linear polymer, and the linear polymer easily breaks the main chain and side chain of the molecule by heat, and the carbon-carbon bond energy of the thermoplastic resin is lower than the ultraviolet wavelength.
- Plastic resins are susceptible to ultraviolet radiation.
- the thermosetting resin since the thermosetting resin has a strong bonding structure such as a network structure, the atomic structure is not easily broken by heat and UV irradiation, so that the deterioration resistance is increased.
- thermosetting resin By using a thermosetting resin as the reflector 5 or the resin 6, the thermosetting resin has a high reflection efficiency and a high resistance to deterioration with respect to ultraviolet rays or the like. Even when the device emits light for a long time, the deterioration of the reflector 5 or the resin 6 and the discoloration due to the deterioration can be suppressed, and the light emission rate can be maintained while maintaining a high reflectance.
- the thermosetting resin has a structure that can be easily changed in composition, and since the aromatic component can be separated, it can be configured without the aromatic component, and the aromatic component can be added to the thermosetting resin. Deterioration resistance can be improved by using a structure that does not have the.
- the holding resin 20 for holding the reflector 5, the resin 6, and the leads 1 and 2 may be formed of the same thermosetting resin, but is exposed on the inner surface of the opening of the reflector 5 or around the mounting region 3 of the resin 6. Only the portion to be formed may be formed of a thermosetting resin.
- the optical semiconductor package in the second embodiment uses an epoxy resin, a silicone resin, or a modified silicone resin as the thermosetting resin in the optical semiconductor package in the first embodiment. Since these resins have high reflection efficiency and high resistance to deterioration such as ultraviolet rays, even when the optical semiconductor device emits light for a long time, it is possible to suppress the deterioration of the reflector or the resin and the discoloration due to the deterioration, and maintain a high reflectance. The light emission rate can be maintained.
- the epoxy resin has a network structure
- the composition can be easily changed, and the aromatic component can be separated to obtain a cycloaliphatic epoxy resin having no aromatic component.
- a cycloaliphatic epoxy resin or the like that does not have an aromatic component, it does not have a carbon-carbon bond and can be hardly affected by ultraviolet rays.
- it since it has a network structure that is stronger than a thermoplastic resin, it is not easy to cut the main chain or side chain of the molecule by heat, and deterioration resistance can be improved.
- a silicone-based resin has a helical structure with a stronger binding force than general polymer bonds such as linear polymers and network structures, so it has excellent heat resistance and weather resistance. Resistance can be improved.
- thermosetting resin a method for manufacturing an optical semiconductor package when an epoxy resin, a silicone resin, or a modified silicone resin is used as a thermosetting resin
- FIG. 3 is a process cross-sectional view illustrating a method of manufacturing an optical semiconductor package by transfer molding.
- the lead 1, 2, holding resin, and reflector formation area are modeled on the inner surface, and a mold provided with an injection port 9 for the resin 13 is prepared. Then, the leads 1 and 2 are placed at predetermined positions inside the lower mold 7 of the mold (FIG. 3A).
- the lower mold 7 and the upper mold 8 are put together, and molten epoxy resin or the like is poured into the mold from the injection port 9.
- the temperature of the mold is set to about 150 ° C. to 200 ° C.
- the temperature of the resin 13 is set to about 50 ° C. to 90 ° C. (FIG. 3B).
- the optical semiconductor package using the epoxy resin, the silicone resin, and the modified silicone resin having high reflection efficiency and high deterioration resistance against ultraviolet rays can be formed as the reflector 5, even when the optical semiconductor device emits light for a long time, The deterioration of the resin and the discoloration due to the deterioration can be suppressed, the high reflectance can be maintained, and the light emission rate can be maintained.
- the reflector 5 and the holding resin 20 are molded together has been described as an example.
- the reflector 5 and the holding resin 20 can be molded separately from different materials.
- the optical semiconductor package in the third embodiment is characterized in that an unsaturated polyester resin is used as the thermosetting resin in the optical semiconductor package in the first embodiment.
- Unsaturated polyester resin also has high reflection efficiency and high resistance to deterioration of ultraviolet rays, etc., so even if the optical semiconductor device emits light for a long time, it can suppress the deterioration of the reflector or resin, and the discoloration due to the deterioration, and maintain high reflectivity. Thus, the light emission rate can be maintained.
- thermosetting resin a method for manufacturing an optical semiconductor package when an unsaturated polyester resin is used as the thermosetting resin
- FIG. 4 is a process cross-sectional view illustrating a method of manufacturing an optical semiconductor package by injection molding.
- the lead 1, 2, holding resin, and reflector formation area are formed on the inner surface, and a mold provided with an injection port 9 for the resin 14 is prepared. Then, the leads 1 and 2 are placed at predetermined positions inside the lower mold 7 of the mold (FIG. 4A).
- a hopper 12 that holds a molten unsaturated polyester resin 14 is connected to the cylinder 11, and the unsaturated polyester resin 14 that is melted from the injection port 9 is pressurized and injected into the mold through the cylinder 11.
- the pellet-shaped unsaturated polyester resin is heated in the hopper 12 to 50 ° C. to 90 ° C., melted and kneaded with a screw in the cylinder 11, and then at 150 at a stroke with an injection pressure of 80 Mpa to 250 Mpa through the nozzle 10.
- Unsaturated polyester resin 14 is injected into a mold heated to from 200 ° C. to 200 ° C. (FIG. 4B).
- the optical semiconductor package using the unsaturated polyester resin having high reflection efficiency and high deterioration resistance against ultraviolet rays or the like can be formed as the reflector 5, even when the optical semiconductor device emits light for a long time, Discoloration due to deterioration can be suppressed, and high light reflectance can be maintained while maintaining high reflectance.
- the unsaturated polyester resin does not have a reactive functional group such as a hydroxyl group (—OH group) and does not chemically bond to a metal, so that resin burrs are hardly generated in the molding process. Even if it occurs, peeling is easy. Since the optical semiconductor package reflects light inside the opening of the reflector 5, the accuracy of the surface shape inside the opening is required. However, an epoxy resin is likely to cause a chemical bond with a metal, and burrs are likely to occur. Therefore, it is necessary to remove wet or dry burrs inside the opening of the reflector 5.
- a reactive functional group such as a hydroxyl group (—OH group)
- thermoplastic resin since the conventional thermoplastic resin has high water absorption, a step of drying the resin is required during holding with the hopper or before holding with the hopper. However, since the unsaturated polyester resin has a low water absorption of 0.07%, a drying step is unnecessary, and an optical semiconductor package can be formed more easily.
- thermoplastic resin nylon
- the added organic substance is carbonized to form black spots, and molding defects are likely to occur.
- the plasticization temperature is about 80 ° C to 100 ° C, the temperature of the resin can be injection molded at 50 ° C to 90 ° C, suppressing the change in material properties. And molding defects can be suppressed.
- thermoplastic resin since the melting temperature is about 50 ° C. to 90 ° C., a mold kept at 150 ° C. to 200 ° C. for cooling using a conventional thermoplastic resin may be used.
- the resin can be heated and cured in the mold, and the conventional mold can be used as it is, and the change from the thermoplastic resin to the thermosetting resin is easy.
- thermoplastic resin when a conventional thermoplastic resin is used, since the resin flow rate is low, it is necessary to inject the resin into the mold at a high pressure. In order to prevent deformation of the leads 1 and 2, 2 had to be provided.
- unsaturated polyester resin since unsaturated polyester resin has a higher resin flow rate than thermoplastic resin, it can be injection-molded at a lower resin injection pressure than thermoplastic resin. Therefore, the possibility that the leads 1 and 2 are deformed is reduced, and it is not necessary to hold the leads 1 and 2 in the injection molding, so that the mold can be simplified.
- the silicone resin can be injection-molded in a liquid type, it becomes a dedicated line corresponding to the material characteristics of the silicone resin, so that it is not versatile and has a high number of maintenances, resulting in low productivity.
- an unsaturated polyester resin since the plasticizing temperature and the curing temperature are separated, it can be melted in the injection cylinder, and high-pressure resin can be injected by injection molding. Resin flows evenly, and variation in resin hardness can be suppressed. Further, when the molten resin is heated, the curing reaction proceeds rapidly, so that the resin can be molded in a short time.
- the reflector 5 and the holding resin 20 are collectively formed has been described as an example.
- the reflector 5 and the holding resin 20 can be separately formed from different materials.
- the optical semiconductor package can be formed by injection molding by using a mold corresponding to the resin 6.
- the strength of the resin can be improved by adding a filler made of glass fiber having a long fiber length and spherical silica to the unsaturated polyester resin of Embodiment 3.
- the reflectance of light can be improved by adding titanium oxide.
- maleic anhydride fumaric acid, styrene, filler, reinforcing agent, curing agent, mold release agent, pigment, and other additives should be added in appropriate combination. You can also.
- the main agent contains 15% to 25% of unsaturated polyester component as the main agent, glass fiber 5% to 20%, titanium oxide 30% to 40%, silica 20% to 30%, and other additives.
- glass fiber 5% to 20%
- titanium oxide 30% to 40% titanium oxide 30% to 40%
- silica 20% to 30% and other additives.
- the unsaturated polyester resin When an unsaturated polyester resin is injection-molded as an optical semiconductor package, the unsaturated polyester resin has hard and brittle characteristics.
- the resin may change color.
- such problems are solved by optimizing the resin composition such as the proportion of unsaturated polyester material, the proportion of glass fiber, the proportion of titanium oxide, the proportion of release agent, and the like. It can be used for resin reflectors.
- a method for producing a resin comprising these unsaturated polyesters is as follows. First, in a container, 15% to 25% of an unsaturated polyester component, 5% to 20% glass fiber as an additive, 30% to 40% titanium oxide, 20% to 30% silica and 1% to 3% of other additives are added and agitated, formed into an elongated cylindrical shape, then cut into pellets to form a resin material to be charged into the hopper 12 . (Embodiment 5) Next, the configuration of the optical semiconductor device of the present invention will be described with reference to FIG.
- FIG. 5A and 5B are cross-sectional views illustrating the configuration of the optical semiconductor device of the present invention.
- FIG. 5A illustrates an optical semiconductor device including a reflector
- FIG. 5B illustrates an optical semiconductor device that does not include a reflector.
- FIG. 5C is a diagram illustrating an optical semiconductor device in which a holding resin is provided on the back surface of the lead.
- a semiconductor element 15 is bonded on the mounting region 3 of the lead 1 to the optical semiconductor package including the reflector shown in the first to fourth embodiments, and the semiconductor element 15 And the connection region 4 of the lead 2 are electrically connected by a conductive material such as a wire 16. Further, a translucent resin 17 is filled inside the opening of the reflector 5 so as to seal the semiconductor element 15 and the wire 16. Even when the optical semiconductor device emits light for a long time while maintaining the light reflectance, the optical semiconductor device having such a configuration can suppress the deterioration of the reflector 5 or the exposed holding resin 20 and the discoloration due to the deterioration. It is possible to maintain the high reflectance and maintain the luminous efficiency.
- a semiconductor element 15 is bonded on the mounting region 3 of the lead 1 to the optical semiconductor package that does not include the reflector shown in the first to fourth embodiments.
- a terminal of the semiconductor element 15 and the connection region 4 of the lead 2 are electrically connected by a conductive material such as a wire 16.
- a lens 18 is bonded onto the leads 1 and 2 so as to cover at least the periphery of the semiconductor element 15 and the wire 16.
- a resin for holding the leads 1 and 2 can be provided on the back surfaces of the main surfaces of the leads 1 and 2.
- the leads 1 and 2 are also held on the back surface of the main surface of the leads 1 and 2 in the optical semiconductor package including the reflector shown in the first to fourth embodiments.
- Resin 19 can be provided.
- the leads 1 and 2 since the leads 1 and 2 are not exposed on the back surface, the leads 1 and 2 may be bent to form the terminals along the resin 19 on the back surface, or the terminals may be formed in a gull wing shape.
- the semiconductor element 15 is bonded onto the mounting region 3 of the lead 1 to the optical semiconductor package formed in this way, and the terminal of the semiconductor element 15 and the connection region 4 of the lead 2 are connected by a conductive material such as a wire 16. Connect electrically.
- a translucent resin 17 is filled inside the opening of the reflector 5 so as to seal the semiconductor element 15 and the wire 16. Even when the optical semiconductor device emits light for a long time while maintaining the light reflectance, the optical semiconductor device having such a configuration can suppress the deterioration of the reflector 5 or the exposed holding resin 20 and the discoloration due to the deterioration. It is possible to maintain the high reflectance and maintain the luminous efficiency.
- the present invention can suppress deterioration of a resin, suppress a decrease in reflectance, hold a lead with resin, and provide an optical semiconductor element mounting region on the lead, a manufacturing method thereof, and an optical Useful for semiconductor devices and the like.
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Abstract
Description
(実施の形態1)
まず、図1,図2を用いて、実施の形態1における光半導体パッケージの構成について説明する。
(実施の形態2)
実施の形態2における光半導体パッケージは、実施の形態1における光半導体パッケージにおいて、熱硬化性樹脂として、エポキシ樹脂、シリコーン樹脂、変性シリコーン樹脂を用いる。これらの樹脂は反射効率が高く紫外線等に対する劣化耐性が高いため、光半導体装置を長時間発光させた場合でも、リフレクタあるいは樹脂の劣化、および劣化による変色を抑制でき、高反射率を維持して発光光率を維持することができる。
(実施の形態3)
実施の形態3における光半導体パッケージは、実施の形態1における光半導体パッケージにおいて、熱硬化性樹脂として、不飽和ポリエステル樹脂を用いることを特徴とする。不飽和ポリエステル樹脂も反射効率が高く紫外線等に対する劣化耐性が高いため、光半導体装置を長時間発光させた場合でも、リフレクタあるいは樹脂の劣化、および劣化による変色を抑制でき、高反射率を維持して発光光率を維持することができる。
(実施の形態4)
実施の形態3の不飽和ポリエステル樹脂に対して、さらに、繊維長の長いガラス繊維と球状のシリカからなるフィラーを添加することにより樹脂の強度を向上させることができる。
(実施の形態5)
次に、図5を用いて本発明の光半導体装置の構成を説明する。
Claims (12)
- 主面に光半導体素子の搭載領域を備える第1のリードと、
主面に前記光半導体素子との導通に用いる導電材の接続領域を備える1または複数の第2のリードと、
前記第1のリードおよび前記第2のリードを保持する保持樹脂と
を有し、少なくとも前記搭載領域の周囲に露出する前記保持樹脂が熱硬化性樹脂であることを特徴とする光半導体パッケージ。 - 少なくとも前記搭載領域および前記接続領域を開口して前記第1のリードおよび前記第2のリードの主面上に形成されるリフレクタをさらに有し、
前記リフレクタが熱硬化性樹脂であることを特徴とする請求項1記載の光半導体パッケージ。 - 前記熱硬化性樹脂が、エポキシ樹脂、シリコーン樹脂、変性シリコーン樹脂のうちのいずれかであることを特徴とする請求項2記載の光半導体パッケージ。
- 前記熱硬化性樹脂が、環状脂肪族型エポキシ樹脂であることを特徴とする請求項2記載の光半導体パッケージ。
- 前記熱硬化性樹脂が、不飽和ポリエステル樹脂であることを特徴とする請求項2記載の光半導体パッケージ。
- 前記不飽和ポリエステル樹脂にガラス繊維と球状シリカからなるフィラーが添加されることを特徴とする請求項5記載の光半導体パッケージ。
- 前記不飽和ポリエステル樹脂に酸化チタンが添加されることを特徴とする請求項5記載の光半導体パッケージ。
- 前記不飽和ポリエステル樹脂にガラス繊維と球状シリカからなるフィラーと酸化チタンと任意の添加剤が添加され、前記不飽和ポリエステル樹脂の成分比をA、前記ガラス繊維の成分比をB、前記酸化チタンの成分比をC、前記シリカの成分比をD、前記添加剤の成分比をEとし、15%<A<25%、5%<B<20%、30%<C<40%、20%<D<30%、1%<E<3%、A+B+C+D+E=100%であることを特徴とする請求項5記載の光半導体パッケージ。
- 前記熱硬化性樹脂が、芳香族成分が未含有の樹脂であることを特徴とする請求項1~請求項8のいずれかに記載の光半導体パッケージ。
- 請求項2記載の光半導体パッケージの製造方法であって、
金型内に前記第1のリードおよび前記第2のリードを載置する工程と、
前記金型内に前記熱硬化性樹脂を流入させて前記保持樹脂および前記リフレクタをトランスファーモールド成形する工程と、
前記熱硬化性樹脂を硬化させる工程と
を有し、前記熱硬化性樹脂がエポキシ樹脂または環状脂肪族型エポキシ樹脂であることを特徴とする光半導体パッケージの製造方法。 - 請求項6記載の光半導体パッケージの製造方法であって、
金型内に前記第1のリードおよび前記第2のリードを載置する工程と、
前記金型内に前記熱硬化性樹脂を注入して前記保持樹脂および前記リフレクタを射出成形する工程と、
前記熱硬化性樹脂を硬化させる工程と
を有し、前記熱硬化性樹脂がシリコーン樹脂、変性シリコーン樹脂あるいは不飽和ポリエステル樹脂であることを特徴とする光半導体パッケージの製造方法。 - 前記金型を150℃~200℃で保持し、前記熱硬化性樹脂を50℃~90℃に加熱して前記金型内に流入または注入することを特徴とする請求項10または請求項11のいずれかに記載の光半導体パッケージの製造方法。
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JP2015055785A (ja) * | 2013-09-12 | 2015-03-23 | パナソニック株式会社 | 光反射体用成形材料、光反射体及び照明器具 |
JP2016213250A (ja) * | 2015-04-30 | 2016-12-15 | 日亜化学工業株式会社 | パッケージ及びその製造方法、並びに発光装置 |
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US9018658B2 (en) | 2015-04-28 |
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