WO2012147450A1 - 切削工具 - Google Patents
切削工具 Download PDFInfo
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- WO2012147450A1 WO2012147450A1 PCT/JP2012/058572 JP2012058572W WO2012147450A1 WO 2012147450 A1 WO2012147450 A1 WO 2012147450A1 JP 2012058572 W JP2012058572 W JP 2012058572W WO 2012147450 A1 WO2012147450 A1 WO 2012147450A1
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- cutting tool
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B27/00—Tools for turning or boring machines; Tools of a similar kind in general; Accessories therefor
- B23B27/14—Cutting tools of which the bits or tips or cutting inserts are of special material
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/587—Fine ceramics
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
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- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
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Definitions
- the present invention relates to a cutting tool, and more particularly to a cutting tool having a coating layer with excellent fracture resistance.
- Cutting tools widely used for cutting of metals, printed circuit boards, etc. are known in which a single layer or a multilayer coating layer is formed on the surface of a substrate such as cemented carbide, cermet or ceramic. It has been.
- a chemical vapor deposition (CVD) film in which a TiC (titanium carbide) layer, a TiN (titanium nitride) layer, a TiCN (titanium carbonitride) layer, an Al 2 O 3 (aluminum oxide) layer, etc. are laminated is often used.
- CVD chemical vapor deposition
- Patent Document 1 discloses a cutting insert in which a surface of a cemented carbide substrate is coated with a TiCN layer, an Al 2 O 3 layer, and a TiCN layer in this order.
- Patent Document 2 discloses a structure in which a hard coating layer is coated on the surface of a silicon nitride substrate, and the first layer of the hard coating layer is a titanium nitride layer made of columnar crystals including granular crystals having a crystal particle diameter of 1 to 30 nm. Is described.
- JP 2003-213455 A Japanese Patent Laid-Open No. 10-015707
- the crystal form of the TiN layer to be formed is a structure in which granular crystals and columnar crystals are mixed in a portion adjacent to the substrate, the adhesion of the coating layer may be insufficient, and Al 2 O during cutting may be insufficient. In some cases, cracks occurred in the three layers and the coating layer chipped.
- the present invention has been made to solve the above-mentioned problems, and an object thereof is to provide a cutting tool having a coating layer having high adhesion and high fracture resistance.
- the cutting tool of the present invention comprises a substrate made of a silicon nitride sintered body, From the substrate side to the surface of the substrate, A first layer made of TiN having an average crystal width of 0.1 to 0.4 ⁇ m; A second layer made of Al 2 O 3 having an average crystal width of 0.01 to 1.5 ⁇ m; A third layer made of TiN having an average crystal width of 0.01 to 0.1 ⁇ m and an average crystal width smaller than the average crystal width of the first layer; A fourth layer made of Al 2 O 3 having an average crystal width of 0.01 to 1.5 ⁇ m; Has a coating layer laminated in this order.
- the cutting tool of the present invention is provided with a coating layer on the surface of a substrate made of a silicon nitride-based sintered body, the coating layer comprising a first layer made of TiN, a second layer made of an Al 2 O 3 layer, and TiN
- a third layer made of a layer and a fourth layer made of an Al 2 O 3 layer are laminated in this order, and these are formed with a predetermined average crystal width, thereby providing high adhesion and high fracture resistance. It becomes a coating layer, and the wear resistance and fracture resistance of the cutting tool are improved.
- FIG. 1 is a scanning electron microscope (SEM) photograph in a cross section including a coating layer 3 of a cutting tool 1 which is a preferred example of a cutting tool.
- SEM scanning electron microscope
- the cutting tool 1 includes a base 2 made of a silicon nitride sintered body, and TiN having an average crystal width of 0.1 to 0.4 ⁇ m on the surface of the base 2 from the base 2 side.
- a first layer 4 made of Al 2 O 3 having an average crystal width of 0.01 to 1.5 ⁇ m, and an average crystal width of 0.01 to 0.1 ⁇ m.
- a third layer 6 made of TiN having an average crystal width smaller than the average crystal width of the first layer 4 and a fourth layer made of Al 2 O 3 having an average crystal width of 0.01 to 1.5 ⁇ m.
- the layer 7 includes the covering layer 3 laminated in this order.
- Desirable ranges of the average crystal width are 0.2 to 0.3 ⁇ m for the first layer 4, 0.4 to 1.0 ⁇ m for the second layer 5, 0.01 to 0.05 ⁇ m for the third layer 6, and the fourth layer. 7 is 0.3 to 1.0 ⁇ m.
- the average crystal width refers to an average value of the width w of the crystal in the direction perpendicular to the crystal growth direction in the crystal of the covering layer 3, and the crystal grows in the field of view taken by the SEM photograph.
- An average crystal width is obtained by drawing a straight line (straight line L shown in FIG. 1) in a direction perpendicular to the direction, that is, in a direction parallel to the surface of the substrate 2 and dividing the length of the straight line by the number of grain boundaries. .
- the silicon nitride sintered body constituting the substrate 2 is made of needle-like crystals, relatively large irregularities are formed on the surface of the substrate 2.
- a first layer 4 made of TiN having a shape that easily forms columnar crystals and is difficult to be pulled out from the surface of the substrate 2 is formed immediately above the substrate 2.
- the second layer 5 made of Al 2 O 3 is formed on the surface of the first layer 4.
- a third layer 6 made of TiN having an average crystal width of 0.01 to 0.1 ⁇ m smaller than the average crystal width of the first layer 4 is formed on the surface of the second layer 5.
- the third layer 6 alleviates the impact on the fourth layer 7 described later, and suppresses the generation of cracks in the Al 2 O 3 layers of the fourth layer 7 and the second layer 5. Further, a fourth layer 7 made of Al 2 O 3 is laminated on the surface of the third layer 6 in order to improve the wear resistance of the coating layer 3.
- the configuration of the coating layer 3 results in the coating layer 3 having high adhesion between the base 2 and the coating layer 3 and high fracture resistance, and the wear resistance and fracture resistance of the cutting tool 1 are improved.
- the TiN layer and the Al 2 O 3 layer have different crystal forms, the adhesion between the layers tends to deteriorate.
- the TiN layer and the Al 2 layer are added while taking into account the functions of the layers.
- the interface with the O 3 layer is minimized.
- adhesion to the substrate 2 is improved.
- the third layer 6 can suppress initial defects and can maintain adhesion with the second layer 5. Note that the thickness of each layer is controlled in a range in which the adhesion of each layer can be maintained in addition to the wear resistance and fracture resistance.
- the thickness of the first layer 4 is 0.7 to 1.3 ⁇ m
- the thickness of the second layer 5 is 0.5 to 1.2 ⁇ m
- the thickness of the third layer 6 is 0.1 to 0.3 ⁇ m
- the thickness of the layer 7 is preferably from 0.5 to 1.2 ⁇ m in order to achieve both wear resistance and fracture resistance of the cutting tool 1.
- the first layer 4 is preferably composed of columnar crystals having an aspect ratio of 3 to 10 in order to improve the adhesion of the coating layer 3.
- the third layer 6 is made of granular crystals because the impact on the second layer 5 and the fourth layer 7 can be reduced.
- the distinction between columnar crystals and granular crystals is that the longest length of the crystal is smaller than 2 in terms of the ratio of the crystal length in the direction perpendicular to it (aspect ratio).
- the columnar crystal is defined in the present invention.
- the Al 2 O 3 layer and the Al 2 O 3 layer of the fourth layer 7 of the second layer 5 is composed of granular crystals.
- the average crystal width of the granular crystal is also measured in the same method and the same direction as the method for measuring the average crystal width of the columnar crystal.
- the ratio (w1 / ws) between the average crystal width w1 of the columnar crystals of the first layer 4 and the average crystal grain size ws of the silicon nitride particles constituting the substrate 2 is 0.05 to 0.5. It is desirable in terms of enhancing the adhesion of the coating layer and improving the wear resistance.
- the silicon nitride based sintered body as the base 2 contains Mg oxide and rare earth element oxide, and the total content of Mg oxide and rare earth element oxide in the inner region 11 of the base body 2.
- the total amount of MgO and Re 2 O 3 is preferably 0.5 to 3.5% by mass in terms of high wear resistance and fracture resistance.
- the rare earth element (Re) refers to each element of Y or a lanthanoid. In particular, it is desirable to contain La as Re in terms of improving chipping resistance.
- the substrate 2 has an interface region 9, an intermediate region 10, and an internal region, which will be described later, from the interface (hereinafter sometimes referred to as the surface) to the coating layer 3 (first layer 4) toward the inside of the substrate 2. 11 exists.
- the Re content (Re s ) in the interface region 9 is 0.1 to 0.8 as a ratio (Re s / Re i ) to the Re content (Re i ) in the internal region 11.
- the Re content (Re m ) in the intermediate region 10 existing immediately below the interface region 9 is 0.05 to 0.3 in terms of the ratio to Re i (Re s / Re i ).
- the presence of the interface region 9 and the intermediate region 10 can improve the wear resistance.
- the ratio (Re m / Re s ) is preferably 0.3 to 0.85 from the viewpoint that chipping of the coating layer 3 can be suppressed.
- the range of the interface region 9 is 0.5 to 2 ⁇ m deep from the surface of the substrate 2, and the range of the intermediate region 10 is 2 to 5 ⁇ m deep from the end of the interface region 9 (the surface of the substrate 2).
- a position deeper than the end of the intermediate region 10 is the internal region 11.
- the Mg content (Mg s ) in the interface region 9 is such that the ratio (Mg s / Mg i ) to the Mg content (Mg i ) in the internal region 11 of the substrate 2 is 0.1 to 0.3.
- the Mg content (Mg m ) in the intermediate region 10 is 0.1 to 0.3 in terms of the ratio to Mg i (Mg m / Mg i ), so that the adhesion between the substrate 2 and the coating layer 3 is improved. Desirable in terms.
- the ratio (Si 1 / Si i ) of the Si content (Si 1 ) to the Si content (Si i ) in the inner region 11 of the substrate 2 is 0.05 to 0.5. It is desirable that the coating layer is diffused at a ratio of the above in terms of adhesion strength of the coating layer and wear resistance. Further, the Si content Si s in the interface region 9 is 0.65 to 0.9 in terms of the ratio (Si s / Si i ) to the Si content Si i in the inner region 11. It is desirable in terms of improving adhesion. In addition, it is desirable in terms of wear resistance that the Si content in the intermediate region 10 is not different from that in the internal region 11. The content of each element can be measured by surface analysis or line analysis of electron microanalysis (EPMA).
- EPMA electron microanalysis
- the average crystal width of the TiN crystal constituting the first layer 4 is 1.5 to 15 times larger than the average crystal width of the TiN crystal constituting the third layer 6.
- silicon nitride (Si 3 N 4 ) powder having an average particle size of 0.2 to 0.8 ⁇ m and a rare earth element (Re) compound (lanthanum hydroxide (La ()) having an average particle size of 1.0 to 1.7 ⁇ m are used.
- a 0.2-0.8 ⁇ m aluminum oxide (Al 2 O 3 ) powder and a magnesium hydroxide (Mg (OH) 2 ) powder having an average particle size of 1.8-4.0 ⁇ m are mixed together, press-molded, cast
- a predetermined tool shape is formed by a known forming method such as insert molding, extrusion molding, or cold isostatic pressing.
- this molded body When this molded body is degreased and then set in a baking pot, it is set using a mixed powder of at least one of Si 3 N 4 powder, Si powder, and SiO 2 powder and Mg (OH) 2 powder, and the lid This is placed in a firing furnace in a state of being placed in a carbon cylinder. Then, the inside of the firing furnace is replaced with 1 atm (101 kPa) of nitrogen, the temperature is increased to 1200 ° C. at a temperature increase rate of 5 to 15 ° C./min, and then the temperature is increased to 1840 to 1880 ° C. at 1 to 5 ° C./min. Thereafter, the furnace is cooled by holding at 1900 to 1950 ° C.
- HIP treatment hot isostatic firing
- thickness grinding processing double-head processing and peripheral processing
- a coating layer is formed on the surface by chemical vapor deposition (CVD).
- the reaction gas composition is adjusted by adjusting a mixed gas consisting of titanium chloride (TiCl 4 ) gas of 0.1 to 10% by volume, nitrogen (N 2 ) gas of 10 to 60% by volume, and the remainder of hydrogen (H 2 ) gas.
- TiCl 4 titanium chloride
- N 2 nitrogen
- H 2 hydrogen
- the first layer (TiN layer) is formed under the condition that the film is introduced into the chamber and the film formation temperature is 950 to 1100 ° C. and 10 to 90 kPa.
- the diffusion ratio of each element in the vicinity of the interface between the substrate and the first layer can be controlled by adjusting the film formation temperature and the gas pressure of the first layer.
- an atmosphere filled with a rare gas such as Ar or He at a gas pressure of 80 to 200 kPa is used.
- a rare gas such as Ar or He
- the Mg, Re, and Si elements at the interface between the substrate and the coating layer The concentration distribution can be controlled within a predetermined range. Whether the TiN crystal is columnar or granular can be adjusted by changing the film forming temperature and the pressure of the mixed gas.
- Al 2 O 3 layer As a method for forming the Al 2 O 3 layer, aluminum chloride (AlCl 3 ) gas is 3 to 20% by volume, hydrogen chloride (HCl) gas is 0.5 to 10% by volume, and carbon dioxide (CO 2 ) gas is 0%. It is desirable to use a mixed gas consisting of 0.01 to 20% by volume and the remainder consisting of hydrogen (H 2 ) gas, and 960 to 1100 ° C. and 5 to 25 kPa. Under these conditions, basically ⁇ -Al 2 O 3 However, ⁇ -Al 2 O 3 may also be formed.
- AlCl 3 aluminum chloride
- HCl hydrogen chloride
- CO 2 carbon dioxide
- a mixed gas composed of 0.1 to 10% by volume of titanium chloride (TiCl 4 ) gas, 10 to 60% by volume of nitrogen (N 2 ) gas, and the balance of hydrogen (H 2 ) gas is prepared as a reaction gas composition. Then, it is introduced into the reaction chamber, and a third layer (TiN layer) is formed under the conditions of a film formation temperature of 800 to 950 ° C. and 10 to 30 kPa. Subsequently, a fourth layer (Al 2 O 3 layer) is formed.
- AlCl 3 aluminum chloride (AlCl 3 ) gas is 3 to 20% by volume
- hydrogen chloride (HCl) gas is 0.5 to 10% by volume
- carbon dioxide (CO 2 ) gas is 0%. It is desirable to use a mixed gas consisting of 0.01 to 20.0% by volume and the remainder consisting of hydrogen (H 2 ) gas, and 950 to 1100 ° C. and 5 to 25 kPa. Under these conditions, ⁇ -Al 2 O 3 is generated. However, ⁇ -Al 2 O 3 may be generated.
- titanium chloride (TiCl 4 ) gas is 0.1 to 10% by volume
- carbon dioxide (CO 2 ) gas is 0.01 to 10% by volume
- the remainder is volume%.
- a mixed gas composed of hydrogen (H 2 ) gas is adjusted and introduced into the reaction chamber, and a fifth layer composed of TiC is formed under conditions of a film forming temperature of 780 to 1100 ° C. and 5 to 25 kPa, and silicon nitride
- a cutting tool having a coating layer formed on the surface of the sintered material is obtained.
- the cutting edge portion on the surface of the formed coating layer 3 is polished.
- the cutting edge portion is processed smoothly, the welding of the work material is suppressed, and the tool is further excellent in fracture resistance.
- Example 1 As starting materials, 1.76% by mass of lanthanum hydroxide (La (OH) 2 ) powder as an Re element compound having an average particle size of 1.2 ⁇ m and aluminum oxide (Al 2 O 3 ) powder having an average particle size of 0.7 ⁇ m 0.4 mass%, 0.72 mass% of magnesium hydroxide (Mg (OH) 2 ) powder having an average particle diameter of 2.5 ⁇ m, and the balance of silicon nitride (Si 3 N 4 having an average particle diameter of 0.3 ⁇ m) )
- the mixture was pulverized and mixed in a mill for 72 hours. Thereafter, the solvent was removed by drying to prepare a granulated powder, and this granulated powder was press-molded into a cutting tool shape of SNGN120212 at a pressure of 98 MPa.
- the molded body After degreasing, when this molded body is set in a baking pot, the molded body is filled with a mixed powder of Si 3 N 4 powder, Si powder and Mg (OH) 2 powder as a spread powder around the molded body. It was placed and covered, and placed in a firing furnace in a state where it was placed in a carbon cylinder. Then, the inside of the firing furnace was replaced with 101 kPa (1 atm) of nitrogen, the temperature was increased to 1200 ° C. at a rate of temperature increase of 10 ° C./min, and then the temperature was increased to 1860 ° C. at 2 ° C./min. Thereafter, the furnace was cooled for 2 hours in an atmosphere of 1920 ° C.
- the conditions in Table 1 were used as the film forming conditions.
- the film forming conditions of the first covering layer are as follows: the first TiN layer is formed using the mixed gas composition of TiN2 in Table 1 at a film forming temperature of 1010 ° C. and a gas pressure of 30 kPa.
- the Al 2 O 3 layer was formed using the Al 2 O 3 1 mixed gas composition shown in Table 1 at a film forming temperature of 1005 ° C. and a gas pressure of 9 kPa, and the third TiN layer was TiN 1 of Table 1.
- the film formation temperature is 880 ° C.
- the Al 2 O 3 layer of the fourth layer uses the mixed gas composition of Al 2 O 3 2 in Table 1.
- the film was formed at a film formation temperature of 1005 ° C. and a gas pressure of 9 kPa.
- the fifth TiC layer was formed at a film formation temperature of 1010 ° C. and a gas pressure of 15 kPa using the TiC mixed gas composition shown in Table 1. Filmed. Sample No. 2 to 17, the first TiN layer is TiN2 in Table 1, the second Al 2 O 3 layer is Al 2 O 3 1 in Table 1, and the third TiN layer is TiN1 in Table 1.
- the fifth layer is deposited using any of the conditions listed in Table 1 of TiC, TiCN or TIN2. Then, the surface of the coating layer 3 was brushed for 30 seconds from the rake face side, and sample No. Cutting tools 1 to 17 were produced.
- crystallization which comprises each layer were observed using the scanning electron microscope (SEM), and average crystal width and aspect ratio were estimated. Further, the contents of Mg and rare earth elements in the substrate were measured with EPMA (electron beam microanalyzer), and the total content was calculated in terms of MgO and Re 2 O 3 .
- SEM scanning electron microscope
- Sample No. 2 in which the average crystal width of the second Al 2 O 3 layer is larger than 1.5 ⁇ m. In No. 16, chipping occurred in the coating layer. Sample No. 3 in which the average crystal width of the TiN layer as the third layer exceeds 0.1 ⁇ m. In No. 17, peeling of the coating layer occurred. Furthermore, sample Nos. 1 and 3 have the same structure of the TiN layer. 15 also caused peeling of the coating layer. In addition, sample Nos. With different coating layer configurations. In No. 14, a defect occurred in the cutting edge.
- sample No. having a coating layer structure according to the present invention In Nos. 1 to 13, there was no chipping or peeling of the coating layer, and the flank wear amount was small.
- Sample No. 1 of Example 1 In the first sample, the base and the second and subsequent layers were formed from the silicon nitride sintered body under the same conditions as in Example 1 except that the film formation conditions of the first TiN layer were changed as shown in Table 3. A coating layer was formed on the surface of the substrate.
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Abstract
Description
該基体の表面に、当該基体側から、
平均結晶幅が0.1~0.4μmのTiNからなる第1層と、
平均結晶幅が0.01~1.5μmのAl2O3からなる第2層と、
平均結晶幅が0.01~0.1μmで前記第1層の平均結晶幅よりも小さい平均結晶幅のTiNからなる第3層と、
平均結晶幅が0.01~1.5μmのAl2O3からなる第4層と、
がこの順に積層された被覆層とを具備している。
なお、第2層5のAl2O3層および第4層7のAl2O3層は粒状結晶で構成される。また、粒状結晶の平均結晶幅も柱状結晶の平均結晶幅の測定方法と同じ方法および同じ方向で測定する。
上述した切削工具の製造方法の一実施形態について説明する。
出発原料として、平均粒径1.2μmのRe元素化合物として水酸化ランタン(La(OH)2)粉末を1.76質量%と、平均粒径0.7μmの酸化アルミニウム(Al2O3)粉末を0.4質量%と、平均粒径2.5μmの水酸化マグネシウム(Mg(OH)2)粉末を0.72質量%と、残部が平均粒径0.3μmの窒化珪素(Si3N4)粉末との割合で調合し、バインダと溶剤とを添加した後、ミルにて72時間、粉砕、混合した。その後、乾燥して溶剤を除去して造粒粉末を作製し、この造粒粉末を98MPaの圧力でSNGN120412の切削工具形状にプレス成形した。
被切削材:FCD-450 スリーブ材
切削速度:500m/分
送り量:0.5mm/rev
切り込み量:2.0mm
切削条件:湿式切削
評価項目:10分加工後、切刃のフランク摩耗量とチッピング状態をデジタルスコープにて観察した。結果は表2に示した。
(実施例2)
実施例1の試料No.1の試料において、第1層のTiN層の成膜条件を表3のように変更すること以外は、基体および第2層以降の各層を実施例1と同じ条件で窒化珪素質焼結体からなる基体の表面に被覆層を成膜した。
2 基体
3 被覆層
4 第1層(TiN層)
5 第2層(Al2O3層)
6 第3層(TiN層)
7 第4層(Al2O3層)
8 第5層(TiCxN1-x層)
9 界面領域
10 中間領域
11 内部領域
Claims (8)
- 窒化珪素質焼結体からなる基体と、
該基体の表面に、当該基体側から、
平均結晶幅が0.1~0.4μmのTiNからなる第1層と、
平均結晶幅が0.01~1.5μmのAl2O3からなる第2層と、
平均結晶幅が0.01~0.1μmで前記第1層の平均結晶幅よりも小さい平均結晶幅のTiNからなる第3層と、
平均結晶幅が0.01~1.5μmのAl2O3からなる第4層と、
がこの順に積層された被覆層とを具備する切削工具。 - 前記第1層の厚みが0.7~1.3μm、前記第2層の厚みが0.5~1.2μm、前記第3層の厚みが0.1~0.3μm、前記第4層の厚みが0.5~1.2μmである請求項1記載の切削工具。
- 前記第1層はアスペクト比が3~10の柱状結晶からなるとともに、前記第3層はアスペクト比が2以下の粒状結晶からなる請求項1または2記載の切削工具。
- 前記基体である窒化珪素質焼結体がMgの酸化物および希土類元素(Re)の酸化物を含有するとともに、前記基体の表面におけるMgと希土類元素の酸化物は、MgOおよびRe2O3換算で合計含有量が0.5~3.5質量%である請求項1乃至3のいずれか記載の切削工具。
- 前記第4層の表面に、平均結晶幅が0.01~0.3μmで厚みが0.1~0.5μmにて構成されるTiCxN1-x(0≦x≦1)層が積層されている請求項1乃至4のいずれか記載の切削工具。
- 前記第1層を構成するTiNの平均結晶幅が、前記第3層を構成するTiNの平均結晶幅よりも1.5~15倍大きい請求項1乃至5のいずれか記載の切削工具。
- 前記第1層の柱状結晶の平均結晶幅w1と、前記基体を構成する窒化珪素粒子の平均結晶粒径wsとの比(w1/ws)が0.05~0.5である請求項3記載の切削工具。
- 前記基体は、前記基体と前記被覆層との界面から前記基体の内部に向かって、界面領域、中間領域および内部領域が存在し、前記内部領域におけるRe含有量(Rei)に対して、前記界面領域におけるReの含有量(Res)の比率(Res/Rei)が0.1~0.8であるとともに、前記中間領域のReの含有量(Rem)が前記Reiに対する比率(Res/Rei)で0.05~0.3である請求項1乃至7のいずれか記載の切削工具。
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US14/113,727 US9539645B2 (en) | 2011-04-28 | 2012-03-30 | Cutting tool |
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EP2940178A4 (en) * | 2012-12-26 | 2016-08-17 | Wu Shanghua | METHOD FOR PRODUCING AN AL2O2 COATING ON A SURFACE OF A SILICON NITRIDE CUTTING TOOL BY PVD AND COMPOSITE COATING METHOD |
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Also Published As
Publication number | Publication date |
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JPWO2012147450A1 (ja) | 2014-07-28 |
CN103501940B (zh) | 2015-10-14 |
EP2703103B1 (en) | 2016-10-05 |
US20140057090A1 (en) | 2014-02-27 |
EP2703103A1 (en) | 2014-03-05 |
EP2703103A4 (en) | 2015-03-11 |
US9539645B2 (en) | 2017-01-10 |
CN103501940A (zh) | 2014-01-08 |
JP5153968B2 (ja) | 2013-02-27 |
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