WO2012129790A1

WO2012129790A1 - Method and device for beam-shaping, light source module and device for laser display

Info

Publication number: WO2012129790A1
Application number: PCT/CN2011/072298
Authority: WO
Inventors: 田有良; 闫国枫; 李巍; 陈昱
Original assignee: 青岛海信信芯科技有限公司
Priority date: 2011-03-30
Filing date: 2011-03-30
Publication date: 2012-10-04

Abstract

A method and a device for beam-shaping, and an light source module and a device for laser display, are provided. The beam-shaping device comprises a step-mirror(30), a first single-tube semi-conductor laser array(A) and a second single-tube semi-conductor laser array(B); wherein, the step-mirror(30) comprises: a plurality of reflective portions(301) for reflecting light received, and a plurality of support portions(302) for connecting each reflective portion(301) of said reflective portions(301). And reflective films are coated on both sides of said reflective portions(301) to form the first and second reflective surface. The emitting surface of the first single-tube semi-conductor laser array(A) corresponds to the first reflective surface of the step-mirror(30), while the emitting surface of the second single-tube semi-conductor laser array(B) corresponds to the second reflective surface of the step-mirror(30). The present method and device can make effective use of space for beam-shaping and simplify the structure.

Description

光束整形方法和装置及激光显示光源模组和设备技术领域本发明涉及光学领域，具体而言，涉及一种光束整形方法和装置及激光显示光源模组和设备。背景技术激光显示技术具有大色域、低能耗、高寿命等特点，并开始在电视、微型投影、商用和娱乐***中应用。激光光源的红光和蓝光部分主要由半导体激光器来实现，但由于半导体激光器的光束质量很差，因而需要对半导体激光器输出地光进行光束整形由光纤耦合输出才能用于激光显示。图 1是根据相关技术的单管半导体激光器的结构和光束示意图，如图 1 所示，半导体激光器芯片 12在热沉 10上生长，其光束质量非常差，有非常大的发散角，并且在垂直于 PN结的方向（快轴 13 ) 和平行于 PN结的方向 (慢轴 14 ), 光束质量相差非常大，在快轴 13 方向上发散角很大，在慢轴 14 方向上发散角 4艮小，其中， 15 为光斑，因此在激光投影的应用中，必须要对半导体激光器进行光束整形。我们在激光显示光源模组中用到的是条形列阵的单管半导体激光器 20, 如图 2所示，把几颗单管半导体激光器依次排在一条直线上，目的是实现高功率输出。针对此问题，在现有技术中提供了一种半导体激光器光束整形装置。该半导体激光器光束整形装置主要釆用梯形镜实现对单管半导体激光器阵列的光束整形，但是此专利中梯形镜的设计太过简单，这能对单侧的半导体激光器进行光束整形，没有充分利用有效的空间完成光束整形过程。针对上述问题，目前尚未提出有效的解决方案。发明内容为此，本发明的主要目的在于提供一种光束整形方法和装置及激光显示光源模组和设备，以解决上述问题。为了实现上述目的，根据本发明的一个方面，提供了一种半导体激光器阵列的光束整形装置。该半导体激光器阵列的光束整形装置包括阶梯镜、第一单管半导体激光器阵列和第二单管半导体激光器阵列，其中，阶梯镜包括：多个反射部，用于反射接收到的光；以及多个支持部，分别用于连接多个反射部中的各个反射部，其中，在多个反射部的两侧均设置有反射膜以形成第一反光面和第二反光面，第一单管半导体激光器阵列的出光面对应于阶梯镜的第一反光面；第二单管半导体激光器阵列的出光面对应于阶梯镜的第二反光面。为了实现上述目的，根据本发明的另一方面，提供了一种半导体激光器阵列的光束整形方法。该半导体激光器阵列的光束整形方法包括：通过阶梯镜的第一反光面反射来自第一单管半导体激光器阵列的光；以及通过阶梯镜的第二反光面反射来自第二单管半导体激光器阵列的光；其中，阶梯镜包括：多个反射部，用于反射接收到的光；以及多个支持部，分别用于连接多个反射部中的各个反射部，其中，在多个反射部的两侧均设置有反射膜以形成第一反光面和第二反光面。为了实现上述目的，根据本发明的另一方面，提供了一种半导体激光器阵列的光纤耦合装置，该半导体激光器阵列的光纤耦合装置包括本发明所提供的半导体激光器阵列的光束整形装置。为了实现上述目的，才艮据本发明的另一方面，提供了一种激光显示光源模组，该激光显示光源模组包括本发明所提供的半导体激光器阵列的光纤耦合装置。为了实现上述目的，根据本发明的另一方面，提供了一种激光显示设备，该激光显示设备包括本发明所提供的激光显示光源模组。通过本发明，釆用包括以下部分的半导体激光器阵列的光束整形装置：该半导体激光器阵列的光束整形装置包括阶梯镜、第一单管半导体激光器阵列和第二单管半导体激光器阵列，其中，阶梯镜包括：多个反射部，用于反射接收到的光；以及多个支持部，分别用于连接多个反射部中的各个反射部，其中，在多个反射部的两侧均设置有反射膜以形成第一反光面和第二反光面 , 第一单管半导体激光器阵列的出光面对应于阶梯镜的第一反光面；第二单管半导体激光器阵列的出光面对应于阶梯镜的第二反光面，能够通过一个阶梯镜实现对两侧的半导体激光器阵列进行光束整形，解决了现有技术中的不能够充分利用有效的空间完成光束整形的问题，进而达到了充分利用有效的空间完成光束整形以及简化结构的效果。附图说明构成本申请的一部分的附图用来提供对本发明的进一步理解，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：图 1是根据相关技术的单管半导体激光器的结构和光束示意图；图 2是根据相关技术的单管半导体激光器阵列的结构示意图；图 3 是居本发明实施例的半导体激光器阵列的光束整形装置的示意图；图 4是才艮据本发明实施例的阶梯镜的示意图；图 5是根据本发明实施例的慢轴准直透镜的示意图；图 6是根据本发明实施例的聚焦透镜的示意图；以及图 7是根据本发明实施例的激光显示设备的示意图。具体实施方式需要说明的是，在不冲突的情况下，本申请中的实施例及实施例中的特征可以相互组合。下面将参考附图并结合实施例来详细说明本发明。实施例 1 图 3是才艮据本发明第一实施例的半导体激光器阵列的光束整形装置的示意图。如图 3所示，该半导体激光器阵列的光束整形装置包括：阶梯镜 30、第一单管半导体激光器阵列 A和第二单管半导体激光器阵列 B , 其中，阶梯镜BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of optics, and in particular to a beam shaping method and apparatus and a laser display source module and apparatus. BACKGROUND OF THE INVENTION Laser display technology has the characteristics of large color gamut, low power consumption, long life, and the like, and has begun to be applied in television, micro projection, commercial and entertainment systems. The red and blue portions of the laser source are mainly realized by a semiconductor laser. However, since the beam quality of the semiconductor laser is poor, it is necessary to beam-shave the light output from the semiconductor laser by the fiber coupling output for laser display. 1 is a schematic view showing the structure and a light beam of a single-tube semiconductor laser according to the related art. As shown in FIG. 1, a semiconductor laser chip 12 is grown on a heat sink 10, the beam quality is very poor, has a very large divergence angle, and is vertical. In the direction of the PN junction (fast axis 13) and the direction parallel to the PN junction (slow axis 14), the beam quality is very different, the divergence angle is large in the fast axis 13 direction, and the divergence angle is 4 in the slow axis 14 direction. Small, where 15 is a spot, so in laser projection applications, beam shaping of semiconductor lasers is necessary. In the laser display light source module, a single-tube semiconductor laser 20 of a strip array is used. As shown in Fig. 2, several single-tube semiconductor lasers are sequentially arranged in a straight line for the purpose of realizing high power output. In response to this problem, a semiconductor laser beam shaping device is provided in the prior art. The semiconductor laser beam shaping device mainly uses a trapezoidal mirror to realize beam shaping of a single-tube semiconductor laser array. However, the design of the ladder mirror in this patent is too simple, which can beam shape the single-sided semiconductor laser, and is not fully utilized. The space completes the beam shaping process. In response to the above problems, no effective solution has been proposed yet. SUMMARY OF THE INVENTION Accordingly, it is a primary object of the present invention to provide a beam shaping method and apparatus and a laser display source module and apparatus to solve the above problems. In order to achieve the above object, according to an aspect of the invention, a beam shaping device for a semiconductor laser array is provided. The beam shaping device of the semiconductor laser array includes a step mirror, a first single tube semiconductor laser array, and a second single tube semiconductor laser array, wherein the step mirror includes: a plurality of reflecting portions for reflecting the received light; and a plurality of a support portion, configured to connect each of the plurality of reflective portions, wherein a reflective film is disposed on both sides of the plurality of reflective portions to form a first reflective surface and a second reflective surface, the first single-tube semiconductor laser The light emitting surface of the array corresponds to the first reflecting surface of the step mirror; the light emitting surface of the second single tube semiconductor laser array corresponds to the second reflecting surface of the step mirror. In order to achieve the above object, according to another aspect of the present invention, a beam shaping method of a semiconductor laser array is provided. The beam shaping method of the semiconductor laser array includes: reflecting light from the first single-tube semiconductor laser array through a first reflecting surface of the step mirror; and reflecting light from the second single-tube semiconductor laser array through a second reflecting surface of the step mirror The step mirror includes: a plurality of reflecting portions for reflecting the received light; and a plurality of supporting portions for respectively connecting each of the plurality of reflecting portions, wherein, on both sides of the plurality of reflecting portions A reflective film is disposed to form the first reflective surface and the second reflective surface. In order to achieve the above object, according to another aspect of the present invention, there is provided a fiber coupling device for a semiconductor laser array, the fiber coupling device of the semiconductor laser array comprising the beam shaping device of the semiconductor laser array provided by the present invention. In order to achieve the above object, according to another aspect of the present invention, a laser display light source module including the fiber coupling device of the semiconductor laser array provided by the present invention is provided. In order to achieve the above object, according to another aspect of the present invention, a laser display device including the laser display light source module provided by the present invention is provided. According to the present invention, a beam shaping device comprising a semiconductor laser array comprising: a step mirror, a first single tube semiconductor laser array and a second single tube semiconductor laser array, wherein the step mirror is used The method includes: a plurality of reflecting portions for reflecting the received light; and a plurality of supporting portions for respectively connecting each of the plurality of reflecting portions, wherein the reflective film is disposed on both sides of the plurality of reflecting portions Forming a first reflecting surface and a second reflecting surface, the light emitting surface of the first single tube semiconductor laser array corresponds to the first reflecting surface of the step mirror; and the light emitting surface of the second single tube semiconductor laser array corresponds to the step mirror The two reflective surfaces can realize beam shaping of the semiconductor laser arrays on both sides through a step mirror, which solves the problem in the prior art. It is enough to make full use of the effective space to complete the beam shaping problem, thereby achieving the effect of fully utilizing the effective space to complete beam shaping and simplifying the structure. BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in FIG. 1 is a schematic diagram of a structure and a light beam of a single-tube semiconductor laser according to the related art; FIG. 2 is a schematic structural view of a single-tube semiconductor laser array according to the related art; FIG. 3 is a semiconductor laser array according to an embodiment of the present invention. 4 is a schematic view of a step mirror according to an embodiment of the present invention; FIG. 5 is a schematic view of a slow axis collimating lens according to an embodiment of the present invention; FIG. 6 is a focus view according to an embodiment of the present invention. A schematic view of a lens; and Figure 7 is a schematic illustration of a laser display device in accordance with an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS It should be noted that the embodiments in the present application and the features in the embodiments may be combined with each other without conflict. The invention will be described in detail below with reference to the drawings in conjunction with the embodiments. Embodiment 1 FIG. 3 is a schematic view of a beam shaping device of a semiconductor laser array according to a first embodiment of the present invention. As shown in FIG. 3, the beam shaping device of the semiconductor laser array includes: a step mirror 30, a first single-tube semiconductor laser array A, and a second single-tube semiconductor laser array B, wherein the step mirror

30 包括：多个反射部 301 (如图 4所示），用于反射接收到的光；以及多个支持部 302 (如图 4所示；)，分别用于连接多个反射部 301中的各个反射部，其中，在多个反射部 301的两侧均设置有反射膜以形成第一反光面和第二反光面，第一单管半导体激光器阵列 A的出光面对应于阶梯镜的第一反光面；第二单管半导体激光器阵列 B的出光面对应于阶梯镜 30的第二反光面。在上述的半导体激光器阵列的光束整形装置中，由于在阶梯镜的反射部的两面均设置有反射膜以形成第一反光面和第二反光面，因而，阶梯镜能够同时反射来自第一单管半导体激光器阵列和第二单管半导体激光器阵列的光，从而在需要对来自两个单管半导体激光器阵列或两个以上的单管半导体激光器阵列的光进行发射时，能够利用同一个阶梯镜实现对两侧的半导体激光器进行光束整形，从而能够充分利用有效的空间完成光束整形过程，简化结构。优选地，第一单管半导体激光器阵列 A和第二单管半导体激光器阵列 B 均包括多个单管发光区，半导体激光器阵列的光束整形装置还包括：多个快轴准直镜 311 ,设置于第一单管半导体激光器阵列 A和阶梯镜 30 之间以及多个快轴准直镜 321 , 第二单管半导体激光器阵列 B 和阶梯镜 30 之间，并分别对应于第一单管半导体激光器阵列 A的多个单管发光区和第二单管半导体激光器阵列 B的多个单管发光区；第一' 1"曼轴准直镜 312, 设置于阶梯镜 30的第一出光方向；以及第二慢轴准直镜 322，设置于阶梯镜 30的第二出光方向。在上述半导体激光器阵列的光束整形装置中，由于在经过阶梯镜之后再对光束进行慢轴准直，因而不需要对每个单管半导体激光器都加一个慢轴准直镜片，从而解决了光束整形装置调焦比较复杂的问题，进而能够降低成本，并且使调焦更加简便。优选地，第一单管半导体激光器阵列 A的多个单管发光区和第二单管半导体激光器阵列 B 的多个单管发光区均分别对应多个反射部中的一个反射部，并且多个反射部中的每个反射部与其所对应的单管发光区成 45。夹角。优选地，多个反射部中的每个反射部在第一单管半导体激光器阵列 A的多个单管发光区和第二单管半导体激光器阵列 B的多个单管发光区的发光面的投影长度分别等于与其对应的发光面的长度。此时，通过单管半导体激光器阵列 A发出的具有间隙的光束在经过阶梯镜 30 的反射后，变为无间隙的合并光束，从而能够消除各个单管半导体激光器发出的光束的间隙。优选地， 'I隻轴准直镜 312或 322的宽度大于或等于阶梯镜 30在其出光方向的投影宽度。优选地，第一' 1"曼轴准直镜 312和第二†曼轴准直镜 322的入光面相互平行设置。通过将第一慢轴准直镜 312和第二慢轴准直镜 322的入光面设置为平行结构，有利于更好地简化结构以及有利于慢轴准直镜的调焦。优选地，第一单管半导体激光器阵列 A为单管半导体激光器线阵或单管半导体激光器面阵；且第二单管半导体激光器阵列 B为单管半导体激光器线阵或单管半导体激光器面阵。优选地，在第一单管半导体激光器阵列 A为单管半导体激光器线阵时，阶梯镜 30 在第一单管半导体激光器线阵方向的投影长度等于第一单管半导体激光器线阵的长度，在第二单管半导体激光器阵列 B为单管半导体激光器线阵时，阶梯镜 30 在第二单管半导体激光器线阵方向的投影长度等于第二单管半导体激光器线阵的长度。此时，通过阶梯镜 30 的反射，能够很好地消除单管半导体激光器线阵所发出的激光的间隙。优选地，在第一单管半导体激光器阵列 A为单管半导体激光器面阵时，阶梯镜在第一单管半导体激光器面阵方向的投影宽度等于第一单管半导体激光器面阵的宽度；在第二单管半导体激光器阵列 B为单管半导体激光器面阵时，阶梯镜在第二单管半导体激光器面阵方向的投影宽度等于第二单管半导体激光器面阵的宽度。此时，通过阶梯镜 30 的反射，能够很好地消除单管半导体激光器面阵所发出的激光的间隙。此外，通过釆用单管半导体激光器阵列 A, 把几颗单管半导体激光器依次排在一条直线上，能够实现高功率输出。考虑到半导体激光器在快轴方向上有着非常大的发散角，在本发明中，优选地，釆用啟柱透镜作为快轴准直镜 311 , 使得光束在快轴方向上接近于平行光，在每一个单管半导体激光器出光面附近安装一个快轴准直镜 311 , 半导体激光器的发光面与快轴准直镜 311要靠的很近，有利于光束的准直和调焦。并且由于半导体激光器在慢轴方向上的发散角很小，在经过光束整形装置后的光程也不是很大，所以在经过光束整形装置之后再对光束进行慢轴准直，不需要每个单管半导体激光器都加一个慢轴准直镜 312片，降低了成本，并且调焦更加简便容易。实现了慢轴的准直，便于实现光纤耦合。优选地，阶梯镜 30 还包括多个支持部，用于连接多个反射部，其中，多个支持部相互平行，且多个反射部相互平行。通过将多个支持部和多个反射部均设置为相互平行结构，能够简便地实现将单管半导体激光器阵列 A中各个单管发光区的光均反射至同一个方向。优选地， 'I隻轴准直镜 312或 322的宽度大于或等于阶梯镜 30在其出光方向的投影宽度。进一步优选地，通过将†曼轴准直镜 312或 322的宽度等于阶梯镜 30在其出光方向的投影宽度，能够使得慢轴准直镜 312或 322的宽度正好等于阶梯镜 30反射出的光束的宽度，从而节省了成本。如图 3所示，通过该种结构的半导体激光器阵列的光束整形装置，能够获得对称的光斑，然后耦合进光纤。单管半导体激光器排成对称的两排， A、 B两排半导体激光管在一条直线上两两相对，中间放置一个阶梯镜 30, 与每个单管发光区对应的是一片与发光面成 45°的镜片，镜片的镜面在半导体激光器的发光面上的投影正好等于发光面的长度，镜片正反两面都镀上高反膜，这样 A、B两排单管半导体激光器分别经过快轴准直镜 311和快轴准直镜 321 的准直之后，正好打在阶梯反射镜上，经过阶梯镜 30 的反射之后，每个单管半导体激光器出射的光会在慢轴方向上紧挨着依次排列，再分别利用慢轴准直镜 312和慢轴准直镜 322进行慢轴准直，通过聚焦透镜 313和聚焦透镜 323进行聚焦以分别耦合进光纤 314和 324中，这样原来发散角很小的慢轴方向上光束扩大了，从而均衡了快慢轴方向的光束质量。从图 4中我们可以看出，利用两侧镀膜的阶梯镜 30实现了 A、 B两排单管半导体激光器的光束整形，并且消除了两列单管半导体激光器之间的缝隙，经过台阶镜（阶梯镜 30 )反射之后的光束经过一个慢轴准直镜 312和一个聚焦透镜耦合进光纤中，作为激光光源模组的输出端。优选地，单管半导体激光器阵列为单管半导体激光器线阵或单管半导体激光器线阵面阵，其中，在单管半导体激光器阵列为单管半导体激光器线阵时，阶梯镜 30 在单管半导体激光器线阵方向的投影长度等于单管半导体激光器线阵的长度；在单管半导体激光器阵列为单管半导体激光器面阵时，阶梯镜 30 在单管半导体激光器面阵方向的投影宽度等于单管半导体激光器面阵的宽度。单管半导体激光器阵列由于散热等因素的影响，有时需要设计成单管半导体激光器线阵，此时，每个单管半导体激光器之间有很大的间隙，这样的结构会是光斑尺寸变大，光强分布不均匀，非常不利于在激光显示中应用，而通过设置台阶反射镜则消除了间隙，如图 4所示，台阶镜的每个台阶装配一个镜片，每个镜片上面镀一层高反膜，设计每个镜片的尺寸使得光刚好反射出来，然后在平行于发光面的方向依次排列镜片，这样经过反射之后，每个单管半导体激光器发出的光束就会依次排列，这样就消除了间隙。与此同时，我们在每个镜片的两面都镀上高反膜，另一侧的激光器也会反射出来同样的光束。由于单管半导体激光器在快轴方向上的发散较大，在慢轴方向上发散很小，通过用反射的办法使得光束在慢轴上依次排列，这样就可以均衡快慢轴方向上的光束质量，并且消除了单管半导体激光管之间的间隙，有利于下一步进行光纤耦合。图 5是慢轴准直镜 312, 图 6是聚焦透镜，经过台阶反射镜整形之后的光经过慢轴准直镜 312的准直和聚焦透镜 313的聚焦耦合进光纤中，然后用于激光显示。通过本发明实施例所提供的光束整形装置，对于非条形阵列的单管半导体激光器（如半导体激光器面阵）进行光束整形和光纤耦合。在这种情况下，通过对条形半导体激光器的上面加一层或者几层同样的条形激光器，设计成阵列型形状，然后把将阶梯镜 30 在平行于发光平面的方向上增大一倍，这样每一个条形的半导体激光器就会通过反射实现在慢轴方向上重排，并且去掉了半导体激光器之间的空隙。这种方案适用于功率较高的情况，这样设计结构会更加紧凑，体积会更小。通过本发明实施例所提供的光束整形装置，可以实现单管半导体激光器条形阵列的光束整形，获得快轴和慢轴方向上对称的光斑，并且通过一个阶梯镜 30 实现了两列半导体激光器条形阵列的光纤耦合输出，去掉了每个单管半导体激光器之间的空隙，本装置结构紧凑，并且操作较为简便，耦合效率较高。通过利用本发明实施例所提供的装置对线阵单管半导体激光器进行快慢轴准直和光束整形，其快轴和慢轴准直分别用快慢轴准直镜片完成，快轴和慢轴准直镜片可以都是利用柱透镜制作成的。其位置关系是在靠近半导体激光器出光面的位置依次放置快轴准直镜 311片和慢轴准直镜 312片，快轴准直镜 311片和慢轴准直镜 312片的距离很近，两个镜片距离半导体激光器的出光面也很近，然后经过一个阶梯镜 30 的反射去掉单管半导体激光器中间的空隙，之后再经过聚焦耦合装置耦合进光纤。本发明实施例所提供的装置釆用一个新的快慢轴准直方法，在靠近半导体激光器的输出面的位置用一片快轴准直镜 311片对快轴方向上进行准直，之后经过一个阶梯镜 30去掉单管半导体激光器之间的空隙，经过反射获得快慢轴方向上对称的光束，然后对反射后的光束进行慢轴准直，在阶梯镜 30 出光的位置加一片孔径较大的慢轴准直镜 312片实现条形半导体激光器阵列的整体光束的慢轴准直，该镜片制作简易，容易调焦，并且成本较微型的慢轴准直镜 312片要低。实施例 2 本发明实施例还提供了一种半导体激光器阵列的光纤耦合装置，该半导体激光器阵列的光纤耦合装置包括本发明实施例所提供的光束整形装置。以及激光显示光源模组，包括本发明实施例所提提供的光纤耦合装置或光束整形装置。实施例 3 本发明实施例还提供了一种激光显示设备，该激光显示设备可以为激光投影机或激光电视。本发明实施例所提供的光束整形装置也可作为高功率单管光纤耦合模块的方案。图 7是根据本发明实施例的激光显示设备的示意图。如图 7所示，单管半导体激光器阵列 C发出的光束经过本发明实施例所提供的光束整形装置 3之后，直接提供给光机 5利用以投射到屏幕 6上。通过阶梯镜的光束整形方案，每个单管半导体激光器出射的光都是非常不对称的椭圓光斑， 'I隻轴方向上光斑尺寸 4艮大，快轴方向上尺寸 4艮小。阶梯镜 30 由两部分组成，与半导体激光器发光面成 45°夹角的是阶梯镜 30的反射部分，平行的部分的支持部分，反射部分一般是镀膜实现反射，支持部分只是起到连接和支撑的作用。本发明釆用在反射部分双面镀高反膜的方法，可以用一个阶梯镜 30 实现两列单管半导体激光器的光束整形过程，节省了空间和成本，便于装置的微型化，并且使得光路调整更简单。优选地，对于本发明实施例所提供的光束整形装置，单管半导体激光器线阵在垂直于纸面方向上还可以再堆叠几层，然后 4巴阶梯镜 30 加高，这样就可以实现阵列半导体激光器的光束整形。本发明实施例还提供了一种半导体激光器阵列的光束整形方法，该半导体激光器阵列的光束整形方法包括：通过多个快轴准直镜 311分别对单管半导体激光器阵列中各个单管发光区发出的光进行快轴准直；通过反射镜对快轴准直后的光进行反射，得到反射光束；以及利用一个慢轴准直镜 312对反射光束进行慢轴准直。在上述半导体激光器阵列的光束整形方法中，由于在经过阶梯镜之后再对光束进行慢轴准直，因而不需要对每个单管半导体激光器都加一个慢轴准直镜片，从而解决了光束整形装置调焦比较复杂的问题，进而能够降低成本，并且使调焦更加简便。实施例 4 本发明实施例还提供了一种半导体激光器阵列的光束整形方法，该半导体激光器阵列的光束整形方法包括：通过阶梯镜的第一反光面反射来自第一单管半导体激光器阵列的光；以及通过阶梯镜的第二反光面反射来自第二单管半导体激光器阵列的光；其中，所述阶梯镜包括：多个反射部，用于反射接收到的光；以及多个支持部，分别用于连接所述多个反射部中的各个反射部，其中，在所述多个反射部的两侧均设置有反射膜以形成所述第一反光面和所述第二反光面。在上述的半导体激光器阵列的光束整形方法中，由于利用阶梯镜同时反射来自第一单管半导体激光器阵列和第二单管半导体激光器阵列的光，从而在需要对来自两个单管半导体激光器阵列或两个以上的单管半导体激光器阵列的光进行发射时，能够利用同一个阶梯镜实现对两侧的半导体激光器进行光束整形，从而能够充分利用有效的空间完成光束整形过程，简化结构。以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的 ^"神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。 30 includes: a plurality of reflecting portions 301 (shown in FIG. 4) for reflecting the received light; and a plurality of supporting portions 302 (shown in FIG. 4) for respectively connecting the plurality of reflecting portions 301 Each of the reflection portions, wherein a reflective film is disposed on both sides of the plurality of reflection portions 301 to form a first reflective surface and a second reflective surface The light-emitting surface of the first single-tube semiconductor laser array A corresponds to the first reflective surface of the step mirror; the light-emitting surface of the second single-tube semiconductor laser array B corresponds to the second reflective surface of the step mirror 30. In the beam shaping device of the semiconductor laser array described above, since the reflective film is provided on both sides of the reflecting portion of the step mirror to form the first reflecting surface and the second reflecting surface, the step mirror can simultaneously reflect the first single tube The light of the semiconductor laser array and the second single-tube semiconductor laser array, thereby enabling the same step mirror to be used when transmitting light from two single-tube semiconductor laser arrays or two or more single-tube semiconductor laser arrays The semiconductor lasers on both sides are beam-shaped, so that the beam shaping process can be fully utilized and the structure can be simplified. Preferably, the first single-tube semiconductor laser array A and the second single-tube semiconductor laser array B each include a plurality of single-tube light-emitting regions, and the beam shaping device of the semiconductor laser array further includes: a plurality of fast-axis collimating mirrors 311 disposed on Between the first single-tube semiconductor laser array A and the step mirror 30 and between the plurality of fast-axis collimating mirrors 321, the second single-tube semiconductor laser array B and the step mirror 30, and respectively corresponding to the first single-tube semiconductor laser array a plurality of single-tube light-emitting regions of A and a plurality of single-tube light-emitting regions of the second single-tube semiconductor laser array B; a first '1'-man axis collimating mirror 312 disposed in a first light-emitting direction of the step mirror 30; The two slow-axis collimating mirrors 322 are disposed in the second light-emitting direction of the step mirror 30. In the beam shaping device of the semiconductor laser array described above, since the light beam is slowly aligned after passing through the step mirror, it is not necessary to A single-tube semiconductor laser is equipped with a slow-axis collimating lens, which solves the problem of complicated focusing of the beam shaping device, thereby reducing the cost and making the focusing easier. Preferably, the plurality of single-tube light-emitting regions of the first single-tube semiconductor laser array A and the plurality of single-tube light-emitting regions of the second single-tube semiconductor laser array B respectively correspond to one of the plurality of reflective portions, and a plurality of Each of the reflecting portions has a 45-degree angle with its corresponding single-tube light-emitting region. Preferably, each of the plurality of reflecting portions emits light in a plurality of single tubes of the first single-tube semiconductor laser array A The projection lengths of the light-emitting surfaces of the plurality of single-tube light-emitting regions of the region and the second single-tube semiconductor laser array B are respectively equal to the lengths of the light-emitting surfaces corresponding thereto. At this time, the light beam having the gap emitted from the single-tube semiconductor laser array A is reflected by the step mirror 30, and becomes a combined beam having no gap, so that the gap of the light beams emitted from the individual single-tube semiconductor lasers can be eliminated. Preferably, the width of the 'I axis only collimating mirror 312 or 322 is greater than or equal to the projected width of the step mirror 30 in its light exiting direction. Preferably, the light incident surfaces of the first '1" MANN axis collimating mirror 312 and the second Sigma axis collimating mirror 322 are disposed in parallel with each other. By passing the first slow axis collimating mirror 312 and the second slow axis collimating mirror The light incident surface of the 322 is arranged in a parallel structure, which is advantageous for better simplification of the structure and for focusing of the slow axis collimating mirror. Preferably, the first single tube semiconductor laser array A is a single tube semiconductor laser line array or a single tube. a semiconductor laser array; and the second single-tube semiconductor laser array B is a single-tube semiconductor laser array or a single-tube semiconductor laser array. Preferably, when the first single-tube semiconductor laser array A is a single-tube semiconductor laser array, The projection length of the step mirror 30 in the direction of the first single-tube semiconductor laser line array is equal to the length of the first single-tube semiconductor laser line array, and when the second single-tube semiconductor laser array B is a single-tube semiconductor laser line array, the step mirror 30 is The projection length of the second single-tube semiconductor laser in the direction of the line array is equal to the length of the second single-tube semiconductor laser line array. At this time, the single-tube can be well eliminated by the reflection of the step mirror 30. a gap of the laser light emitted by the semiconductor laser array. Preferably, when the first single-tube semiconductor laser array A is a single-tube semiconductor laser array, the projection width of the step mirror in the direction of the first single-tube semiconductor laser array is equal to the first The width of the single-tube semiconductor laser array; when the second single-tube semiconductor laser array B is a single-tube semiconductor laser array, the projection width of the step mirror in the direction of the second single-tube semiconductor laser array is equal to the second single-tube semiconductor laser surface Width of the array. At this time, the gap of the laser light emitted by the array of the single-tube semiconductor laser can be well eliminated by the reflection of the step mirror 30. In addition, by using a single-tube semiconductor laser array A, several single-tube semiconductors are used. The lasers are sequentially arranged in a straight line to enable high power output. Considering that the semiconductor laser has a very large divergence angle in the fast axis direction, in the present invention, preferably, the cymbal lens is used as the fast axis collimating mirror 311. , so that the beam is close to parallel light in the fast axis direction, in the illuminating surface of each single-tube semiconductor laser A fast axis collimating mirror 311 is mounted, and the light emitting surface of the semiconductor laser is close to the fast axis collimating mirror 311, which is advantageous for collimation and focusing of the beam, and due to the divergence angle of the semiconductor laser in the slow axis direction. Very small, after beam shaping The optical path after the device is not very large, so the beam is slowly aligned after passing through the beam shaping device, and it is not necessary to add a slow-axis collimating mirror 312 to each single-tube semiconductor laser, which reduces the cost, and Focusing is easier and easier. The collimation of the slow axis is achieved, which facilitates fiber coupling. Preferably, the step mirror 30 further includes a plurality of supporting portions for connecting the plurality of reflecting portions, wherein the plurality of supporting portions are parallel to each other, and the plurality of reflecting portions are parallel to each other. By arranging the plurality of support portions and the plurality of reflection portions in a mutually parallel configuration, it is possible to easily reflect the light of each of the single-tube light-emitting regions in the single-tube semiconductor laser array A to the same direction. Preferably, the width of the 'I axis only collimating mirror 312 or 322 is greater than or equal to the projected width of the step mirror 30 in its light exiting direction. Further preferably, by making the width of the †man axis collimating mirror 312 or 322 equal to the projection width of the step mirror 30 in its light exiting direction, the width of the slow axis collimating mirror 312 or 322 can be made exactly equal to the beam reflected by the step mirror 30. The width, which saves costs. As shown in Fig. 3, by the beam shaping device of the semiconductor laser array of this structure, a symmetrical spot can be obtained and then coupled into the optical fiber. The single-tube semiconductor lasers are arranged in two rows of symmetry. The two rows of semiconductor laser tubes A and B are opposite each other in a straight line, and a step mirror 30 is placed in the middle, and each of the single-tube light-emitting areas corresponds to a light-emitting surface. ° lens, the mirror surface of the lens on the light-emitting surface of the semiconductor laser is exactly equal to the length of the light-emitting surface, the front and back of the lens are coated with a high-reflection film, so that the two rows of single-tube semiconductor lasers A and B are respectively aligned through the fast axis After the collimation of the mirror 311 and the fast axis collimating mirror 321 is exactly performed on the step mirror, after the reflection of the step mirror 30, the light emitted by each single-tube semiconductor laser is arranged next to each other in the slow axis direction. Then, the slow axis collimation is performed by the slow axis collimating mirror 312 and the slow axis collimating mirror 322, respectively, and focused by the focusing lens 313 and the focusing lens 323 to be respectively coupled into the optical fibers 314 and 324, so that the original divergence angle is small. The beam expands in the direction of the slow axis, thereby equalizing the beam quality in the direction of the fast and slow axis. As can be seen from Fig. 4, beam shaping of the two rows of single-tube semiconductor lasers A and B is realized by using the step mirror 30 coated on both sides, and the gap between the two rows of single-tube semiconductor lasers is eliminated, and the step mirror is The reflected beam 30) is reflected by a slow axis collimating mirror 312 and a focusing lens into the optical fiber as an output of the laser light source module. Preferably, the single-tube semiconductor laser array is a single-tube semiconductor laser line array or a single-tube semiconductor laser line array array, wherein when the single-tube semiconductor laser array is a single-tube semiconductor laser line array, the step mirror 30 is in a single-tube semiconductor laser The projection length in the direction of the line array is equal to the length of the single-tube semiconductor laser array; when the single-tube semiconductor laser array is a single-tube semiconductor laser array, the projection width of the step mirror 30 in the direction of the array of the single-tube semiconductor laser is equal to that of the single-tube semiconductor laser The width of the area array. Single-tube semiconductor laser arrays sometimes need to be designed as single-tube semiconductor laser arrays due to factors such as heat dissipation. At this time, there is a large gap between each single-tube semiconductor laser, and such a structure will have a large spot size. The uneven distribution of light intensity is very unfavorable for application in laser display, and the gap is eliminated by setting the step mirror. As shown in Fig. 4, each step of the step mirror is equipped with one lens, and each lens is coated with a high layer. Anti-film, the size of each lens is designed so that the light is just reflected, and then the lenses are arranged in parallel in the direction parallel to the light-emitting surface, so that after the reflection, the beams emitted by each single-tube semiconductor laser are sequentially arranged, thus eliminating the gap. At the same time, we apply a high-reflection film on both sides of each lens, and the laser on the other side also reflects the same beam. Since the single-tube semiconductor laser has a large divergence in the fast axis direction and a small divergence in the slow axis direction, the beam is sequentially arranged on the slow axis by reflection, so that the beam quality in the fast and slow axis directions can be equalized. And the gap between the single-tube semiconductor laser tubes is eliminated, which is beneficial to the next step of fiber coupling. 5 is a slow axis collimating mirror 312, and FIG. 6 is a focusing lens. The light after being shaped by the step mirror is collimated by the collimator of the slow axis collimating mirror 312 and the focus lens 313 is coupled into the optical fiber, and then used for laser display. . Through the beam shaping device provided by the embodiment of the present invention, beam shaping and fiber coupling are performed for a single-tube semiconductor laser (such as a semiconductor laser area array) of a non-strip array. In this case, an array shape is designed by adding one or several layers of the same strip laser to the upper surface of the strip-shaped semiconductor laser, and then the step mirror 30 is doubled in the direction parallel to the light-emitting plane. Thus, each strip-shaped semiconductor laser is rearranged in the slow axis direction by reflection, and the gap between the semiconductor lasers is removed. This solution is suitable for higher power situations, so that the design structure will be more compact and smaller. The beam shaping device provided by the embodiment of the present invention can realize beam shaping of a single-tube semiconductor laser strip array, obtain a symmetrical spot in the fast axis and slow axis directions, and realize two columns of semiconductor laser strips through one step mirror 30. The fiber-coupled output of the array is used to remove the gap between each single-tube semiconductor laser. The device is compact in structure, simple in operation, and high in coupling efficiency. The fast and slow axis collimation and beam shaping of the linear array single-tube semiconductor laser are performed by using the device provided by the embodiment of the present invention, and the fast axis and the slow axis collimation are respectively completed by the fast and slow axis collimating lens, and the fast axis and the slow axis collimate. The lenses can all be made using a cylindrical lens. The positional relationship is that 311 pieces of the fast axis collimating mirror and 312 pieces of the slow axis collimating mirror are sequentially placed near the light emitting surface of the semiconductor laser, and the distance between the fast axis collimating mirror 311 and the slow axis collimating mirror 312 is very close. Two lenses are separated from the semiconductor laser The illuminating surface is also close, and then the gap between the single-tube semiconductor lasers is removed by reflection of a step mirror 30, and then coupled into the fiber through a focus coupling device. The device provided by the embodiment of the present invention uses a new fast and slow axis collimation method to collimate the fast axis direction with a fast axis collimating mirror 311 at a position close to the output surface of the semiconductor laser, and then passes a step. The mirror 30 removes the gap between the single-tube semiconductor lasers, obtains a symmetrical beam in the direction of the fast and slow axis through reflection, and then performs slow axis collimation on the reflected beam, and adds a slow axis with a larger aperture at the position where the step mirror 30 emits light. The collimating mirror 312 realizes the slow axis collimation of the overall beam of the strip-shaped semiconductor laser array, the lens is easy to fabricate, easy to focus, and the cost is lower than that of the miniature slow-axis collimating mirror 312. Embodiment 2 The embodiment of the present invention further provides a fiber coupling device for a semiconductor laser array, and the fiber coupling device of the semiconductor laser array includes the beam shaping device provided by the embodiment of the present invention. And a laser display light source module, comprising the fiber coupling device or the beam shaping device provided by the embodiment of the invention. Embodiment 3 An embodiment of the present invention further provides a laser display device, which may be a laser projector or a laser television. The beam shaping device provided by the embodiment of the invention can also be used as a solution for a high-power single-tube fiber coupling module. Figure 7 is a schematic illustration of a laser display device in accordance with an embodiment of the present invention. As shown in FIG. 7, the light beam emitted from the single-tube semiconductor laser array C is directly supplied to the optical machine 5 for projection onto the screen 6 after passing through the beam shaping device 3 provided by the embodiment of the present invention. Through the beam shaping scheme of the step mirror, the light emitted by each single-tube semiconductor laser is a very asymmetrical elliptical spot, and the spot size in the 'I-axis direction is 4艮, and the size in the fast-axis direction is 4艮. The step mirror 30 is composed of two parts, and the angle of the angle of 45° with the light emitting surface of the semiconductor laser is the reflecting portion of the step mirror 30, the supporting portion of the parallel portion, the reflecting portion is generally coated for reflection, and the supporting portion is only for connection and support. The role. The invention is applied to the method of double-plating high-reflection film on the reflective portion, and the beam shaping process of the two-row single-tube semiconductor laser can be realized by one step mirror 30, which saves space and cost, facilitates miniaturization of the device, and makes the optical path adjustment. simpler. Preferably, for the beam shaping device provided by the embodiment of the present invention, the single-tube semiconductor laser line array can be further stacked in a direction perpendicular to the paper surface, and then the 4 bar step mirror 30 is raised, so that the array semiconductor can be realized. Beam shaping of the laser. The embodiment of the present invention further provides a beam shaping method for a semiconductor laser array. The beam shaping method of the semiconductor laser array includes: respectively sending, by a plurality of fast axis collimating mirrors 311, a single tube light emitting area in a single tube semiconductor laser array. The light is collimated by the fast axis; the light collimated by the fast axis is reflected by the mirror to obtain a reflected beam; and the slow beam is collimated by a slow axis collimating mirror 312. In the beam shaping method of the above semiconductor laser array, since the light beam is slowly aligned after passing through the step mirror, it is not necessary to add a slow axis collimating lens to each single-tube semiconductor laser, thereby solving the beam shaping. The device focuses on more complicated problems, which in turn reduces costs and makes focusing easier. Embodiment 4 The embodiment of the present invention further provides a beam shaping method for a semiconductor laser array. The beam shaping method of the semiconductor laser array includes: reflecting light from the first single-tube semiconductor laser array through a first reflective surface of the step mirror; And reflecting light from the second single-tube semiconductor laser array through the second reflective surface of the step mirror; wherein the step mirror comprises: a plurality of reflecting portions for reflecting the received light; and a plurality of supporting portions, respectively And connecting each of the plurality of reflecting portions, wherein a reflective film is disposed on both sides of the plurality of reflecting portions to form the first reflecting surface and the second reflecting surface. In the beam shaping method of the semiconductor laser array described above, since the light from the first single-tube semiconductor laser array and the second single-tube semiconductor laser array is simultaneously reflected by the step mirror, When it is required to emit light from two single-tube semiconductor laser arrays or two or more single-tube semiconductor laser arrays, it is possible to perform beam shaping on the semiconductor lasers on both sides by using the same step mirror, thereby making full use of effective The space completes the beam shaping process and simplifies the structure. The above is only the preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes can be made to the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the scope of the present invention are intended to be included within the scope of the present invention.

Claims

权利要求书 Claim

1. 一种半导体激光器阵列的光束整形装置，其特征在于包括： A beam shaping device for a semiconductor laser array, comprising:

阶梯镜，包括： Step mirror, including:

多个反射部，用于反射接收到的光；以及 a plurality of reflecting portions for reflecting the received light;

多个支持部，分别用于连接所述多个反射部中的各个反射部，其中，在所述多个反射部的两侧均设置有反射膜以形成第一反光面和第二反光面 , a plurality of supporting portions for respectively connecting each of the plurality of reflecting portions, wherein a reflective film is disposed on both sides of the plurality of reflecting portions to form a first reflecting surface and a second reflecting surface,

第一单管半导体激光器阵列，其出光面对应于所述阶梯镜的第一反光面；以及 a first single-tube semiconductor laser array having a light-emitting surface corresponding to a first reflective surface of the step mirror;

第二单管半导体激光器阵列，其出光面对应于所述阶梯镜的第二反光面。 The second single-tube semiconductor laser array has a light-emitting surface corresponding to the second reflective surface of the step mirror.

2. 根据权利要求 1所述的半导体激光器阵列的光束整形装置，其特征在于,所述第一单管半导体激光器阵列和所述第二单管半导体激光器阵列均包括多个单管发光区，所述半导体激光器阵列的光束整形装置还包括： 2. The beam shaping device of a semiconductor laser array according to claim 1, wherein said first single-tube semiconductor laser array and said second single-tube semiconductor laser array each comprise a plurality of single-tube light-emitting regions, The beam shaping device of the semiconductor laser array further includes:

多个快轴准直镜，设置于所述第一单管半导体激光器阵列和所述阶梯镜之间以及所述第二单管半导体激光器阵列和所述阶梯镜之间，并分别对应于所述第一单管半导体激光器阵列的多个单管发光区和所述第二单管半导体激光器阵列的多个单管发光区； a plurality of fast axis collimating mirrors disposed between the first single tube semiconductor laser array and the step mirror and between the second single tube semiconductor laser array and the step mirror, and respectively corresponding to the a plurality of single-tube light-emitting regions of the first single-tube semiconductor laser array and a plurality of single-tube light-emitting regions of the second single-tube semiconductor laser array;

第一慢轴准直镜，设置于所述阶梯镜的第一出光方向；以及第二慢轴准直镜，设置于所述阶梯镜的第二出光方向。 a first slow axis collimating mirror disposed in a first light exiting direction of the step mirror; and a second slow axis collimating mirror disposed in a second light emitting direction of the step mirror.

3. 根据权利要求 2所述的半导体激光器阵列的光束整形装置，其特征在于，所述第一单管半导体激光器阵列的多个单管发光区和所述第二单管半导体激光器阵列的多个单管发光区均分别对应所述多个反射部中的一个反射部，并且所述多个反射部中的每个反射部与其所对应的单管发光区成 45°夹角。 3. The beam shaping device of a semiconductor laser array according to claim 2, wherein: a plurality of single-tube light-emitting regions of said first single-tube semiconductor laser array and said plurality of second single-tube semiconductor laser arrays The single-tube light-emitting regions respectively correspond to one of the plurality of reflecting portions, and each of the plurality of reflecting portions is at an angle of 45° with the corresponding single-tube light-emitting region.

4. 根据权利要求 3所述的半导体激光器阵列的光束整形装置，其特征在于，所述多个反射部中的每个反射部在所述第一单管半导体激光器阵列的多个单管发光区和所述第二单管半导体激光器阵列的多个单管发光区的发光面的投影长度分别等于与其对应的发光面的长度。 4. The beam shaping device of a semiconductor laser array according to claim 3, wherein each of said plurality of reflecting portions is in said first single-tube semiconductor laser array The projection lengths of the plurality of single-tube light-emitting regions of the column and the light-emitting surfaces of the plurality of single-tube light-emitting regions of the second single-tube semiconductor laser array are respectively equal to the lengths of the light-emitting surfaces corresponding thereto.

5. 根据权利要求 2所述的半导体激光器阵列的光束整形装置，其特征在于，所述多个支持部相互平行，且所述多个反射部相互平行。 The beam shaping device of a semiconductor laser array according to claim 2, wherein the plurality of support portions are parallel to each other, and the plurality of reflection portions are parallel to each other.

6. 根据权利要求 2所述的半导体激光器阵列的光束整形装置，其特征在于，所述慢轴准直镜的宽度大于或等于所述阶梯镜在其出光方向的投影宽度。 6. The beam shaping device of a semiconductor laser array according to claim 2, wherein the width of the slow axis collimating mirror is greater than or equal to a projection width of the step mirror in a light exiting direction thereof.

7. 根据权利要求 2所述的半导体激光器阵列的光束整形装置，其特征在于，所述第一慢轴准直镜和所述第二慢轴准直镜的入光面相互平行设置。 The beam shaping device of a semiconductor laser array according to claim 2, wherein the light incident surfaces of the first slow axis collimating mirror and the second slow axis collimating mirror are disposed in parallel with each other.

8. 根据权利要求 1所述的半导体激光器阵列的光束整形装置，其特征在于，所述第一单管半导体激光器阵列为单管半导体激光器线阵或单管半导体激光器面阵；且所述第二单管半导体激光器阵列为单管半导体激光器线阵或单管半导体激光器面阵。 8. The beam shaping device of a semiconductor laser array according to claim 1, wherein the first single-tube semiconductor laser array is a single-tube semiconductor laser line array or a single-tube semiconductor laser array; and the second The single-tube semiconductor laser array is a single-tube semiconductor laser line array or a single-tube semiconductor laser array.

9. 根据权利要求 8所述的半导体激光器阵列的光束整形装置，其特征在于，在所述第一单管半导体激光器阵列为单管半导体激光器线阵时，所述阶梯镜在所述第一单管半导体激光器线阵方向的投影长度等于所述第一单管半导体激光器线阵的长度，在所述第二单管半导体激光器阵列为单管半导体激光器线阵时，所述阶梯镜在所述第二单管半导体激光器线阵方向的投影长度等于所述第二单管半导体激光器线阵的长度。 9. The beam shaping device of a semiconductor laser array according to claim 8, wherein when the first single-tube semiconductor laser array is a single-tube semiconductor laser line array, the step mirror is in the first single The projection length of the tube laser array line direction is equal to the length of the first single-tube semiconductor laser line array, and when the second single-tube semiconductor laser array is a single-tube semiconductor laser line array, the step mirror is in the The projection length of the line direction of the two single-tube semiconductor lasers is equal to the length of the second single-tube semiconductor laser line array.

10. 根据权利要求 8所述的半导体激光器阵列的光束整形装置，其特征在于，在所述第一单管半导体激光器阵列为单管半导体激光器面阵时，所述阶梯镜在所述第一单管半导体激光器面阵方向的投影宽度等于所述第一单管半导体激光器面阵的宽度；在所述第二单管半导体激光器阵列为单管半导体激光器面阵时，所述阶梯镜在所述第二单管半导体激光器面阵方向的投影宽度等于所述第二单管半导体激光器面阵的宽度。 10. The beam shaping device of a semiconductor laser array according to claim 8, wherein when the first single-tube semiconductor laser array is a single-tube semiconductor laser array, the step mirror is in the first single a projection width of the tube semiconductor laser in the array direction is equal to a width of the first single-tube semiconductor laser array; and when the second single-tube semiconductor laser array is a single-tube semiconductor laser array, the step mirror is in the The projection width of the array direction of the two single-tube semiconductor lasers is equal to the width of the array of the second single-tube semiconductor lasers.

11. 根据权利要求 1所述的半导体激光器阵列的光束整形装置，其特征在于，所述第一单管半导体激光器阵列和所述第二单管半导体激光器阵列相互平行设置。 A beam shaping device for a semiconductor laser array according to claim 1, wherein said first single-tube semiconductor laser array and said second single-tube semiconductor laser array are disposed in parallel with each other.

12. 一种半导体激光器阵列的光束整形方法，其特征在于包括： 12. A beam shaping method for a semiconductor laser array, comprising:

通过阶梯镜的第一反光面反射来自第一单管半导体激光器阵列的光；以及 Reflecting light from the first single-tube semiconductor laser array through the first reflective surface of the step mirror;

通过阶梯镜的第二反光面反射来自第二单管半导体激光器阵列的光； Light from the second single-tube semiconductor laser array is reflected by the second reflective surface of the step mirror;

其中，所述阶梯镜包括： Wherein, the step mirror comprises:

多个支持部，分别用于连接所述多个反射部中的各个反射部，其中，在所述多个反射部的两侧均设置有反射膜以形成所述第一反光面和所述第二反光面。 a plurality of supporting portions for respectively connecting each of the plurality of reflecting portions, wherein a reflective film is disposed on both sides of the plurality of reflecting portions to form the first reflecting surface and the first portion Two reflective surfaces.

13. 一种半导体激光器阵列的光纤耦合装置，其特征在于包括权利要求 1 至 11中任一项所述的光束整形装置。 A fiber-optic coupling device for a semiconductor laser array, comprising the beam shaping device according to any one of claims 1 to 11.

14. 一种激光显示光源模组，其特征在于包括权利要求 13所述的光纤耦合装置。 A laser display light source module comprising the fiber coupling device of claim 13.

15. —种激光显示设备，其特征在于包括权利要求 14所述的激光显示光源模组。 A laser display device comprising the laser display light source module of claim 14.