WO2012108766A3 - Procédé de fabrication d'une cellule solaire et cellule solaire - Google Patents

Procédé de fabrication d'une cellule solaire et cellule solaire Download PDF

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Publication number
WO2012108766A3
WO2012108766A3 PCT/NL2012/050067 NL2012050067W WO2012108766A3 WO 2012108766 A3 WO2012108766 A3 WO 2012108766A3 NL 2012050067 W NL2012050067 W NL 2012050067W WO 2012108766 A3 WO2012108766 A3 WO 2012108766A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
diffusion
regions
semiconductor substrate
resistance layer
Prior art date
Application number
PCT/NL2012/050067
Other languages
English (en)
Other versions
WO2012108766A2 (fr
Inventor
Johannes Reinder Marc LUCHIES
Klaas Heres
Patrick Willem Hubert Heuts
Original Assignee
Tsc Solar B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL2006161A external-priority patent/NL2006161C2/en
Priority claimed from NL2006160A external-priority patent/NL2006160C2/en
Application filed by Tsc Solar B.V. filed Critical Tsc Solar B.V.
Publication of WO2012108766A2 publication Critical patent/WO2012108766A2/fr
Publication of WO2012108766A3 publication Critical patent/WO2012108766A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Energy (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Selon l'invention, dans la fabrication d'une cellule solaire, une couche de résistance à la diffusion (22A) de matériau isolant électriquement est disposée sur le premier côté (11) d'un substrat semi-conducteur (10), et mise sous forme de motifs selon un motif prédéterminé de régions émettrices sélectives (30) devant être appliquées dans le substrat semi-conducteur ; des espèces dopantes sont disposées dans le substrat semi-conducteur (10) pour former les régions émettrices sélectives (30) comprenant des porteurs de charge de type p. Par la suite, des régions de diffusion de dopant sélectives (31) sont créées à travers une diffusion contrôlée d'autres espèces dopantes à travers la couche de résistance à la diffusion (22a), les régions émettrices sélectives (30) et les régions de diffusion (31) fonctionnant de manière conjointe en tant qu'émetteur. La couche de résistance à la diffusion (22) s'étendra également dans n'importe quel trou traversant (20) dans le substrat (10).
PCT/NL2012/050067 2011-02-08 2012-02-08 Procédé de fabrication d'une cellule solaire et cellule solaire WO2012108766A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
NL2006161 2011-02-08
NL2006161A NL2006161C2 (en) 2011-02-08 2011-02-08 Method of manufacturing a solar cell and solar cell thus obtained.
NL2006160A NL2006160C2 (en) 2011-02-08 2011-02-08 A method of manufacturing a solar cell and a solar cell.
NL2006160 2011-02-08

Publications (2)

Publication Number Publication Date
WO2012108766A2 WO2012108766A2 (fr) 2012-08-16
WO2012108766A3 true WO2012108766A3 (fr) 2013-01-17

Family

ID=45755470

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/NL2012/050067 WO2012108766A2 (fr) 2011-02-08 2012-02-08 Procédé de fabrication d'une cellule solaire et cellule solaire

Country Status (1)

Country Link
WO (1) WO2012108766A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR102012030606B1 (pt) * 2012-11-30 2021-02-09 União Brasileira De Educação E Assistência - Mantenedora Da Puc Rs processo de difusão de dopantes em lâminas de silício para a fabricação de células solares
US9768343B2 (en) * 2013-04-29 2017-09-19 OB Realty, LLC. Damage free laser patterning of transparent layers for forming doped regions on a solar cell substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
DE102006003283A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen
DE102007036921A1 (de) * 2007-02-28 2008-09-04 Centrotherm Photovoltaics Technology Gmbh Verfahren zur Herstellung von Siliziumsolarzellen
WO2010052565A2 (fr) * 2008-11-07 2010-05-14 Centrotherm Photovoltaics Technology Gmbh Procédé permettant de fabriquer une photopile à dopage à deux étapes

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3903428A (en) 1973-12-28 1975-09-02 Hughes Aircraft Co Solar cell contact design
EP0881694A1 (fr) 1997-05-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Cellule solaire et méthode de fabrication
WO2009050639A1 (fr) 2007-10-16 2009-04-23 Nxp B.V. Particule comprenant un cœur et une enveloppe et ses applications
NL2000999C2 (nl) 2007-11-13 2009-05-14 Stichting Energie Werkwijze voor het fabriceren van kristallijn silicium zonnecellen met gebruikmaking van co-diffusie van boor en fosfor.
NL2001015C2 (nl) 2007-11-19 2009-05-20 Energieonderzoek Ct Nederland Werkwijze voor het fabriceren van een achterzijde-gecontacteerde fotovoltaïsche cel, en achterzijde-gecontacteerde fotovoltaïsche cel die is gemaakt door een dergelijke werkwijze.
WO2010018490A2 (fr) 2008-08-12 2010-02-18 Nxp B.V. Cellule photovoltaïque et son procédé de fabrication
DE102009031151A1 (de) 2008-10-31 2010-05-12 Bosch Solar Energy Ag Solarzelle und Verfahren zu deren Herstellung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
DE102006003283A1 (de) * 2006-01-23 2007-07-26 Gp Solar Gmbh Verfahren zur Herstellung eines Halbleiterbauelements mit unterschiedlich stark dotierten Bereichen
DE102007036921A1 (de) * 2007-02-28 2008-09-04 Centrotherm Photovoltaics Technology Gmbh Verfahren zur Herstellung von Siliziumsolarzellen
WO2010052565A2 (fr) * 2008-11-07 2010-05-14 Centrotherm Photovoltaics Technology Gmbh Procédé permettant de fabriquer une photopile à dopage à deux étapes

Also Published As

Publication number Publication date
WO2012108766A2 (fr) 2012-08-16

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