WO2012093808A3 - 내지문 코팅 방법 및 장치 - Google Patents

내지문 코팅 방법 및 장치 Download PDF

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Publication number
WO2012093808A3
WO2012093808A3 PCT/KR2011/010297 KR2011010297W WO2012093808A3 WO 2012093808 A3 WO2012093808 A3 WO 2012093808A3 KR 2011010297 W KR2011010297 W KR 2011010297W WO 2012093808 A3 WO2012093808 A3 WO 2012093808A3
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WO
WIPO (PCT)
Prior art keywords
resistant coating
fingerprint resistant
evaporating
thin film
plasma
Prior art date
Application number
PCT/KR2011/010297
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English (en)
French (fr)
Other versions
WO2012093808A2 (ko
Inventor
김윤택
Original Assignee
바코스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 바코스 주식회사 filed Critical 바코스 주식회사
Priority to CN2011800640892A priority Critical patent/CN103282541A/zh
Publication of WO2012093808A2 publication Critical patent/WO2012093808A2/ko
Publication of WO2012093808A3 publication Critical patent/WO2012093808A3/ko

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/26Vacuum evaporation by resistance or inductive heating of the source
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 기존의 전자빔증착법 대신에 AC 플라즈마 개질법 및 열증착법을 복합적으로 사용하여 생산성을 향상시킨 내지문 표면 코팅 방법 및 장치에 관한 것으로서, 상세하게는 본 발명은 a) AC 플라즈마법을 이용하여 SiOx(x는 1.5-2.0) 박막을 증착하는 단계, 및 b) 상기 SiOx 박막이 증착된 기재 표면에 열증착(Thermal evaporation)을 통해 불소화합물을 증착시키는 단계를 포함하는 내지문 코팅 방법에 대한 것이다.
PCT/KR2011/010297 2011-01-05 2011-12-29 내지문 코팅 방법 및 장치 WO2012093808A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011800640892A CN103282541A (zh) 2011-01-05 2011-12-29 一种耐指纹镀膜方法及装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0001064 2011-01-05
KR1020110001064A KR20120079717A (ko) 2011-01-05 2011-01-05 내지문 코팅 방법 및 장치

Publications (2)

Publication Number Publication Date
WO2012093808A2 WO2012093808A2 (ko) 2012-07-12
WO2012093808A3 true WO2012093808A3 (ko) 2012-09-27

Family

ID=46457812

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/010297 WO2012093808A2 (ko) 2011-01-05 2011-12-29 내지문 코팅 방법 및 장치

Country Status (3)

Country Link
KR (1) KR20120079717A (ko)
CN (1) CN103282541A (ko)
WO (1) WO2012093808A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101539624B1 (ko) * 2013-08-08 2015-07-27 바코스 주식회사 증착 물질 연속 공급장치 및 이를 이용한 하향식 내지문 코팅 증착 장치와 인라인 설비
CN104513950B (zh) * 2014-10-29 2019-10-01 苏州东杏表面技术有限公司 一种快速制备耐磨防污膜的方法
KR102648216B1 (ko) 2016-07-06 2024-03-15 삼성디스플레이 주식회사 윈도우, 이를 포함하는 표시 장치, 및 윈도우 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051298A (en) * 1997-01-22 2000-04-18 Samsung Electronics Co., Limited Optical disc having protective films
JP2001137775A (ja) * 1999-11-17 2001-05-22 Nisshin Steel Co Ltd 塗膜硬度が高く耐摩耗性に優れた透明フッ素樹脂被覆ステンレス鋼板
KR20070059512A (ko) * 2005-12-06 2007-06-12 주식회사 탑테크이십일 이온 플레이팅 지그장치
US20100045911A1 (en) * 2008-08-19 2010-02-25 Hiraide Yoshifumi Liquid crystal display apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2519591Y (zh) * 2001-11-07 2002-10-30 鸿富锦精密工业(深圳)有限公司 便携式电子装置外壳
CN1696744A (zh) * 2004-05-14 2005-11-16 毅强企业股份有限公司 大型塑胶镜片制法
WO2009131036A1 (ja) * 2008-04-25 2009-10-29 株式会社アルバック 成膜方法及び成膜装置
CN101294270B (zh) * 2008-06-06 2011-02-16 东北大学 真空电弧离子镀制备镍铬复合镀层的设备及方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051298A (en) * 1997-01-22 2000-04-18 Samsung Electronics Co., Limited Optical disc having protective films
JP2001137775A (ja) * 1999-11-17 2001-05-22 Nisshin Steel Co Ltd 塗膜硬度が高く耐摩耗性に優れた透明フッ素樹脂被覆ステンレス鋼板
KR20070059512A (ko) * 2005-12-06 2007-06-12 주식회사 탑테크이십일 이온 플레이팅 지그장치
US20100045911A1 (en) * 2008-08-19 2010-02-25 Hiraide Yoshifumi Liquid crystal display apparatus

Also Published As

Publication number Publication date
WO2012093808A2 (ko) 2012-07-12
CN103282541A (zh) 2013-09-04
KR20120079717A (ko) 2012-07-13

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