WO2012077881A1 - Apparatus for inspecting led chips - Google Patents
Apparatus for inspecting led chips Download PDFInfo
- Publication number
- WO2012077881A1 WO2012077881A1 PCT/KR2011/004522 KR2011004522W WO2012077881A1 WO 2012077881 A1 WO2012077881 A1 WO 2012077881A1 KR 2011004522 W KR2011004522 W KR 2011004522W WO 2012077881 A1 WO2012077881 A1 WO 2012077881A1
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- WIPO (PCT)
- Prior art keywords
- led chip
- contact
- chip
- led
- pin
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Definitions
- the present invention relates to an LED chip testing apparatus, and more particularly, to an LED chip testing apparatus that can maintain a constant contact distance between a probe pin and an LED chip of a probe card.
- LED Light Emitting Diode
- Luminescent diode is a kind of light emitting device that emits light by power supply and is also called a Luminescent diode.
- This LED is not only small, long life, low power consumption, but also high speed response. Recently, it has been widely used as a backlight unit of various display devices requiring light sources, as a light source for small lamps and various instruments.
- the general LED chip manufacturing process is an epitaxial process (EPI) for preparing an epi wafer on a substrate, which is a base material, a chip process for manufacturing a wafer into a plurality of LED chips, and packaging an LED chip manufactured in the chip process. It consists of a package process and an inspection process that inspects the LED chip that has been packaged.
- EPI epitaxial process
- the inspection process measures the optical and current characteristics of the LED chips in the LED chip inspection device.
- the LED chip inspection apparatus to extend the wafer to which the LED chip is attached before the inspection process so that the characteristics of the LED chips can be measured more smoothly.
- the wafer expanding operation is an operation of expanding the wafer W to space the gap between the LED chips L loaded on the wafer substrate. This wafer expansion operation is performed to prevent mutual interference between the adjacent LED chip L and the measurement unit while measuring the characteristics of the LED chip L.
- the wafer W including the LED chips L whose expansion operation is completed is loaded on the wafer stage 130 of the LED chip inspection apparatus 101.
- the LED chips L on the wafer W loaded on the wafer stage 130 are probe cards provided in the LED chip inspection apparatus 101 by driving the wafer stage 130 in X, Y, Z, and ⁇ directions. It contacts the probe pin 111 of 110 and receives a current to emit light.
- the optical characteristics of the LED chip L are measured by an optical inspection device (not shown) provided in the LED chip inspection device 101, and the LED chip L by the current inspection device (not shown). The current characteristic of) is measured.
- height deviation of the LED chips is generated by foreign matter such as dust that may exist between the wafer substrate and the LED chip, and thus, an approach distance error between the probe pin and the LED chips is generated.
- the entire surface of the lower surface of the wafer W is vacuumed to the vacuum chuck 120 while the wafer W including the LED chips L is loaded on the wafer stage 130 of the inspection apparatus 101.
- a method of planarizing the top surface of the wafer W that is, the top surface of the LED chips L, has been proposed.
- the entire area of the upper surface of the vacuum chuck should be kept flat without error.
- the method using the vacuum chuck has a problem that it is difficult to virtually eliminate the height variation of the LED chips due to foreign matters such as processing errors of the vacuum chuck or dust that may exist on the upper surface of the vacuum chuck.
- An object of the present invention is to provide an LED chip inspection apparatus capable of maintaining a constant contact distance between a probe pin and an LED chip of a probe card, thereby preventing breakage of the LED chip and the probe pin and accurately measuring the characteristics of the LED chips. To make it possible.
- a probe card having at least one pair of probe pins electrically contacting at least one LED chip to be measured and a wafer including the LED chips are loaded to move to the probe pin contact position.
- the contact position by controlling the driving of the chip contact unit It is achieved by the LED chips in the LED chip testing apparatus comprising: a control section for the context to the pro peupin.
- the sensing means preferably has a coordinate sensor that detects the coordinates of each of the LED chips on the wafer and transfers them to the controller.
- the sensing means is effective to include a level sensor for detecting the height value of each of the LED chip on each coordinate detected by the coordinate sensor to transmit to the controller.
- the controller controls the driving of the stage driver to move the LED chip of the measurement target to the contact position based on the coordinate values of the LED chips transmitted from the sensing means, and the LED chip height value of each coordinate transmitted from the sensing means. It is more preferable to control the driving of the chip contact unit based on the contact distance reference value between the pre-stored probe pin and the LED chip.
- the contact distance reference value between the probe pin and the LED chip may be more effectively the distance value between the LED chip and the probe pin having a normal height value previously input to the controller.
- the controller may control the driving height of the chip contact unit by comparing the height value of the LED chip to be measured with the height value of the normal LED chip previously input.
- the chip contact unit is lifted to contact and spaced apart from the wafer lower region corresponding to the LED chip moved to the contact position, the chip contact pin for approaching and spaced apart the LED chip probe pin, and the contact for lifting the chip contact pin It is effective to have a driver.
- the chip contact unit is contacted and spaced apart from the wafer lower region corresponding to the LED chip moved to the contact position, and a pin lifting hole is formed therein to receive the chip contact pin so as to be able to lift and lower the pin latch from the upper surface. More preferably, it includes an adsorption guide having a pin hole through which the upper end of the chip contact pin enters and exits.
- the upper surface of the chip contact pin corresponds to the area of the LED chip.
- the suction guide is a pin lifting hole is connected to the vacuum suction means and the vacuum line of the outside, it is preferable to suck the LED chip lower region of the contact position through the pinhole.
- a plurality of LED chips to be measured may be selected, the probe pin may be provided in a plurality of pairs corresponding to the LED chips to be measured, and the chip contact unit may be provided in a plurality corresponding to the LED chips to be measured.
- an LED chip inspection apparatus that can maintain a constant contact distance between the probe pin and the LED chip of the probe card at all times. As a result, breakage of the LED chip and the probe pin is prevented, and the characteristics of the LED chips are accurately measured.
- 1 is a perspective view showing a wafer loaded with extended LED chips
- Figure 2 is a side view of the main portion of the conventional LED chip inspection device
- FIG. 3 is a side view of the LED chip testing apparatus according to the present invention.
- Figure 9 is a side view of the LED chip testing apparatus according to another embodiment of the present invention.
- the LED chip inspection apparatus 1 includes a probe card 10 which electrically contacts the LED chip L loaded on the expanded wafer W.
- the probe card 10 includes a reflecting plate 13 having a measuring hole 15 in which the LED chip L is located in a central region thereof, and an LED chip L located in the measuring hole 15 of the reflecting plate 13. It has a probe pin 11 that is contacted to apply. In some cases, the probe card 10 may include only the probe pin 11 without the configuration of the reflective plate 13.
- the probe pin 11 applies power transmitted from a power supply (not shown) to the LED chip (L).
- the probe pin 11 is electrically connected to the current measuring unit 23 so as to transfer the current measured value for the power applied to the LED chip L to the current measuring unit 23 of the measuring means 20 which will be described later. It is.
- the measuring unit 20 collects a spectrum of light emitted from the LED chip L and reflected from the reflector 13 of the probe card 10 to measure an optical characteristic of the LED chip L ( 21) and a current measuring unit 23 for measuring the characteristics of the current value of the LED chip L.
- the optical measuring unit 21 is provided as a spherical integrating sphere in the upper region of the probe card 10 to measure optical characteristics of light transmitted from the LED chip L and the reflector 13.
- the current measuring unit 23 measures a current characteristic value of the LED chip L transmitted from the probe pin 11 of the probe card 10.
- the wafer stage 30 loads the wafer W including the LED chips L transferred from a supply unit (not shown) during the LED chip L inspection process.
- the wafer stage 30 is moved in the X, Y, Z, and ⁇ directions by the driving of the stage driver 40 to move the wafer W loaded on the wafer stage 30 in the lower region of the probe card 10. Move in the X, Y, Z, and ⁇ directions.
- the stage driver 40 precisely controls the X, Y, Z, ⁇ axis driving of the wafer stage 30 to probe each of the LED chip (L) on the wafer (W) loaded on the wafer stage 30 It may be moved to be located in the lower region of the measurement hole 15 of (10).
- the sensing unit 50 detects the coordinates of each of the LED chips L on the wafer W and transmits the coordinates to the controller 70, and the LED chips on the respective coordinates detected by the coordinate sensor 51.
- the level sensor 53 may sense the height of each of the L and transmit the height values of the LED chips L on each coordinate to the controller 70.
- the coordinate sensor 51 acquires an image of the LED chips L on the wafer W and sets coordinate data (hereinafter referred to as 'coordinate value') for the image map of each of the LED chips L. It may be a vision camera or a vision scanner that transmits a value to the control unit 70.
- the level sensor 53 laser irradiates each of the LED chips L on the wafer W to transmit a height value for each of the LED chips L positioned on each coordinate to the controller 70. Can be.
- the chip contact unit 60 is installed in the lower region of the probe card 10 at a distance corresponding to the wafer (W) arrangement space.
- the chip contact unit 60 includes a region in which the LED chip L, which is a measurement target, located under the measurement hole 15 of the probe card 10 among the LED chips L loaded on the wafer W.
- the suction guide 61 which adsorbs the lower surface of the wafer substrate and the LED chip L in the area adsorbed by the suction guide 61 so as to be lifted and lowered on the suction guide 61 are upwardly pressed onto the probe pin 11. It has the chip contact pin 63 to contact, and the contact driver 65 which raises and lowers the chip contact pin 63. As shown in FIG.
- the suction guide 61 has a larger area than the lower surface of the LED chip L, and a pin lifting hole 61a in which the chip contact pin 63 can be lifted and received is formed therein. .
- the pin lifting hole 61a is connected to an external vacuum suction means (not shown) and a vacuum line (not shown). In the upper region of the suction guide 61, a pinhole 61b penetrated from the upper surface toward the pin lifting hole 61a therein is formed.
- the chip contact pin 63 is lifted in and out through the pinhole 61b of the suction guide 61, and the lower end is coupled to receive the lift force with respect to the contact driver 65.
- the upper end of the chip contact pin 63 is formed to have an area corresponding to the lower area of the LED chip L, thereby stably upwardly pressing the LED chip L toward the probe pin 11.
- the contact driver 65 is provided to precisely adjust the lifting distance of the chip contact pin 63 according to the driving signal transmitted from the controller 70.
- the contact driver 65 raises and lowers the suction guide 61 so that the upper surface of the suction guide 61 is in contact with and spaced apart from the lower surface of the LED chip L and the wafer substrate in this region.
- the contact driver 65 may be provided in the form of a multi-stage driver capable of driving the lift of the suction guide 61 and the lift of the chip contact pin 63 separately.
- the contact driver 65 is composed of a combination of the forward and reverse motor and the transfer screw to convert the rotational motion into a linear motion to transfer to the suction guide 61 and the chip contact pin 63, or the forward and reverse motor, rack and pinion, or It can be configured with a combination of a forward and a reverse motor and a cam.
- the contact driver 65 is preferably provided with a configuration that can accurately adjust the rising distance of the chip contact pin 63 in consideration of the height of the LED chip (L) of the measurement target.
- the chip contact unit 60 is not shown as a simpler configuration, the suction guide 61 may be omitted, and the chip contact unit 60 may include only the chip contact pin 63 and the contact driver 65.
- control unit 70 is a coordinate value of each LED chip (L) on the wafer (W) transmitted from the coordinate sensor 51 and the level sensor 53 of the sensing means 50, and the LED chip (located at each coordinate ( The driving of the stage driver 40 and the chip contact unit 60 is controlled based on the height value of L) and the contact distance reference value between the probe pin 11 and the LED chip L.
- the contact distance reference value between the probe pin 11 and the LED chip L is a reference distance between the LED chip L and the probe pin 11 which is set in advance, and is a normal height previously input to the controller 70. Corresponds to the distance between the LED chip (L) having a value and the probe pin (11).
- the controller 70 controls the stage driver 40 to be driven based on the coordinate values of the LED chip L as the measurement target among the LED chips L on the wafer W so that the LED chip L as the measurement target is controlled. It is located under the measuring hole 15 of the probe card 10. Then, by comparing the height value of the measurement target LED chip L and the contact distance reference value transmitted from the level sensor 53, by controlling the driving height of the contact driver 65 of the chip contact unit 60, the measurement target The LED chip L is stably contacted to the probe pin 11 of the probe card 10.
- Coordinate sensor of the sensing means 50 before, during, or after the wafer W on which the LEDs to be measured are loaded is transferred to the wafer stage 30 of the LED chip inspection apparatus 1.
- 51 and the level sensor 53 detect the coordinate value and the height value for each of the LED chips L on the wafer W, convert the data into data, and transmit the data to the controller 70, and the controller 70 transmits the wafer W.
- the height value of each of the LED chips L on each coordinate is stored (S01).
- the control unit 70 has previously stored the contact distance reference value between the LED chip (L) having a normal height value and the probe pin (11).
- the controller 70 sequentially turns the LED chips L to be measured at each coordinate on the wafer W into the probe card 10.
- the driving of the stage driver 40 is controlled to be located in the lower region of the measuring hole 15 (S02).
- the control unit 70 transmits the level sensor 53.
- the height value of the corresponding LED chip L is compared with the height value of the normal LED chip L previously input (S03).
- the controller 70 contacts the chip contact unit 60 at a height corresponding to a preset contact distance reference value.
- the driving of the driver 65 is controlled to raise the suction guide 61 and the chip contact pin 63 (S04).
- the adsorption guide 61 contacts the wafer substrate under the LED chip L to be measured to adsorb the LED chip L and the wafer substrate. This is to prevent the lifting of the adhesive material interposed between the LED chip (L) and the wafer (W) when the chip contact pin 63 rises.
- the contact driver 65 raises the chip contact pin 63 as shown in FIG. 6 so that the LED chip L is connected to the probe pins in the measuring hole 15 of the probe card 10. 11) to make contact.
- the control unit 70 is set in consideration of the height value of the LED chip (L) having a difference In order to correspond to the distance reference value, the contact height of the contact driver 65 of the chip contact unit 60 is controlled to adjust the height of the suction guide 61 and the chip contact pin 63 (S04 ′).
- the adsorption guide 61 contacts the wafer substrate under the LED chip L to be measured to adsorb the LED chip L and the wafer substrate, and then raises the height corresponding to the rising height adjustment value.
- the chip contact pin 63 is raised to stably contact the probe pin 11 in the measurement hole 15 of the probe card 10.
- the LED chips L on the wafer W are stably contacted with the probe pins 11 regardless of the height deviation, thereby preventing breakage of the LED chips L and the probe pins 11,
- the optical measuring unit 21 and the current measuring unit 23 the optical characteristics and the current characteristics of the LED chip L can be accurately measured.
- FIG. 9 is a side view of the LED chip testing apparatus according to another embodiment of the present invention.
- the LED chip inspection apparatus includes a probe card 10 electrically contacting a plurality of LED chips L and an LED chip L contacted to the probe card 10.
- Measuring means 20 for measuring the optical characteristics and current characteristics of these, and a wafer for moving a plurality of LED chips to be inspected of the LED chip (L) loaded on the wafer (W) to the contact position of the probe card 10
- a stage driver 40 driving the stage 30, the wafer stage 30, sensing means 50 for detecting the coordinates and the height of the LED chips L loaded on the wafer W, and a probe card.
- a controller 70 for driving the stage driver 40 and the chip contact unit 60 according to the height data It includes.
- the LED chip inspection apparatus has the structure of the probe card 10 and the chip contact unit 60, and the rest of the configuration except the control driving of the apparatus is the LED chip inspection apparatus 1 of FIGS. Since it is almost the same as), only the structure of the probe card 10 and the chip contact unit 60 and the control drive of the apparatus will be described below.
- the probe card 10 includes a reflecting plate 13 having a measuring hole 15 in which an LED chip L is positioned in a central region thereof, and a plurality of LED chips L disposed in the measuring hole 15 of the reflecting plate 13. And a plurality of pairs of probe pins 11 which are contacted to apply a current to the field.
- the probe pin 11 applies power transmitted from a power supply (not shown) to the LED chip (L).
- the probe pin 11 is electrically connected to the current measuring unit 23 so as to transfer the current measured value for the power applied to the LED chip L to the current measuring unit 23 of the measuring means 20 which will be described later. It is.
- the chip contact unit 60 may be installed in a plurality of spaced distances corresponding to the wafer W arrangement spaces in the lower region of the probe card 10.
- These chip contact units 60 are similar to the chip contact unit 60 of the LED chip inspection apparatus 1 according to the above-described embodiment, respectively, the suction guide 61, the chip contact pin 63, and the contact driver 65. ), And its configuration and structure may be the same, so a description thereof will be omitted.
- control unit 70 is a coordinate value of each of the LED chip (L) on the wafer (W) transferred from the coordinate sensor 51 and the level sensor 53 of the sensing means 50, and the LED chip located at each coordinate
- the driving of the stage driver 40 and the chip contact unit 60 is controlled based on the height value of L and the contact distance reference values of the probe pins 11 and the LED chip L.
- the contact distance reference values of the probe pins 11 and the LED chip L are reference distances between the LED chip L and the probe pin 11 which are preset, and are normally input to the controller 70. Corresponds to the distance value between the LED chip (L) having a height value and the probe pin (11).
- the controller 70 controls the driving of the stage driver 40 based on the coordinate values of each of the LED chips L to be measured among the LED chips L on the wafer W to measure the LED chip L to be measured.
- the controller 70 controls the driving of the stage driver 40 based on the coordinate values of each of the LED chips L to be measured among the LED chips L on the wafer W to measure the LED chip L to be measured.
- the LED chip (measurement target) Each of the L) is stably contacted to the corresponding probe pin 11.
- the LED chips L on the wafer W are stably contacted to the probe pin 11 regardless of the height deviation, thereby quickly inspecting the plurality of LED chips L.
- FIG. while preventing damage to the LED chip (L) and the probe pin (11), the optical and current characteristics of the LED chip (L) in the optical measuring unit 21 and the current measuring unit 23 can be accurately measured. Can be.
- the contact distance between the probe pin and the LED chips of the probe card of the LED chip inspection apparatus can be kept constant at all times. As a result, breakage of the LED chip and the probe pin is prevented, and the characteristics of the LED chips are accurately measured.
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Abstract
The present invention relates to an apparatus for inspecting LED chips. The contact distance between the probe pin of a probe card and LED chips is maintained to be constant. Therefore, damage to the LED chips and probe pin is prevented, and at the same time, the characteristics of the LED chips can be accurately measured.
Description
본 발명은 엘이디 칩 검사장치에 관한 것으로서, 프로브카드의 프로브핀과 엘이디 칩들의 컨텍 거리를 항상 일정하게 유지할 수 있는 엘이디 칩 검사장치에 관한 것이다.The present invention relates to an LED chip testing apparatus, and more particularly, to an LED chip testing apparatus that can maintain a constant contact distance between a probe pin and an LED chip of a probe card.
엘이디(LED : Light Emitting diode)는 전원공급에 의해 발광하는 발광소자의 일종으로서 발광다이오드(Luminescent diode)라고 칭하기도 한다.LED (Light Emitting Diode) is a kind of light emitting device that emits light by power supply and is also called a Luminescent diode.
이 엘이디는 소형이면서 수명이 길고 소비전력이 적을 뿐 만 아니라 고속응답의 장점을 가지고 있다. 이에 최근에는 광원을 필요로 하는 각종 디스플레이 기기의 백라이트유닛과 소형전등 및 각종 계기류의 광원으로 널리 이용되고 있다. This LED is not only small, long life, low power consumption, but also high speed response. Recently, it has been widely used as a backlight unit of various display devices requiring light sources, as a light source for small lamps and various instruments.
이러한 엘이디는 반도체 공정을 이용하여 소형의 칩 형태로 제조된다. 일반적인 엘이디 칩의 제조공정은 기초 소재인 기판 상에 에피 웨이퍼를 마련하는 에피공정(EPI)과, 웨이퍼를 다수의 엘이디 칩으로 제조하는 칩공정(Fabrication) 및 칩공정에서 제조된 엘이디 칩을 패키징하는 패키지공정(Package)과, 패키지공정을 거친 엘이디 칩을 검사하는 검사공정으로 이루어진다. Such LEDs are manufactured in the form of small chips using a semiconductor process. The general LED chip manufacturing process is an epitaxial process (EPI) for preparing an epi wafer on a substrate, which is a base material, a chip process for manufacturing a wafer into a plurality of LED chips, and packaging an LED chip manufactured in the chip process. It consists of a package process and an inspection process that inspects the LED chip that has been packaged.
이 중 검사공정은 엘이디 칩 검사장치에서 엘이디 칩들의 광특성과 전류특성을 측정한다. 한편, 엘이디 칩 검사장치에서 엘이디 칩들의 특성이 보다 원활하게 측정될 수 있도록 검사공정 전에 엘이디 칩들이 부착된 웨이퍼를 확장하는 작업을 수행한다. Among these, the inspection process measures the optical and current characteristics of the LED chips in the LED chip inspection device. On the other hand, in the LED chip inspection apparatus to extend the wafer to which the LED chip is attached before the inspection process so that the characteristics of the LED chips can be measured more smoothly.
웨이퍼 확장 작업은 도 1에 도시된 바와 같이, 웨이퍼(W)를 확장하여 웨이퍼 기판 상에 적재된 엘이디 칩(L)들의 간격을 이격시키는 작업이다. 이 웨이퍼 확장 작업은 엘이디 칩(L)의 특성을 측정하는 동안 인접하는 엘이디 칩(L)과 측정 유닛 간의 상호 간섭을 방지하기 위해 이루어진다. As shown in FIG. 1, the wafer expanding operation is an operation of expanding the wafer W to space the gap between the LED chips L loaded on the wafer substrate. This wafer expansion operation is performed to prevent mutual interference between the adjacent LED chip L and the measurement unit while measuring the characteristics of the LED chip L.
확장 작업이 완료된 엘이디 칩(L)들을 포함하는 웨이퍼(W)는 엘이디 칩 검사장치(101)의 웨이퍼스테이지(130)에 적재된다. 그리고, 웨이퍼스테이지(130)에 적재된 웨이퍼(W)상의 엘이디 칩(L)들은 웨이퍼스테이지(130)의 X,Y,Z,θ축 방향 구동에 의해 엘이디 칩 검사장치(101)에 마련된 프로브카드(110)의 프로브핀(111)에 컨텍되어 전류를 인가받아 발광한다. The wafer W including the LED chips L whose expansion operation is completed is loaded on the wafer stage 130 of the LED chip inspection apparatus 101. The LED chips L on the wafer W loaded on the wafer stage 130 are probe cards provided in the LED chip inspection apparatus 101 by driving the wafer stage 130 in X, Y, Z, and θ directions. It contacts the probe pin 111 of 110 and receives a current to emit light.
엘이디 칩(L)이 발광하면 엘이디 칩 검사장치(101)에 마련된 광검사장치(미도시)에서 엘이디 칩(L)의 광특성을 측정하게 되며, 전류검사장치(미도시)에서 엘이디 칩(L)의 전류특성을 측정하게 된다. When the LED chip L emits light, the optical characteristics of the LED chip L are measured by an optical inspection device (not shown) provided in the LED chip inspection device 101, and the LED chip L by the current inspection device (not shown). The current characteristic of) is measured.
그런데, 이러한 종래 엘이디 칩 검사장치에 있어서는 프로브카드의 프로브핀과 엘이디 칩이 컨텍되는 과정에서 엘이디 칩의 높이(D) 편차에 의해서 프로브핀이 엘이디 칩에 접촉하는 가압력에 오차가 발생하였다. However, in the conventional LED chip inspection device, an error occurs in the pressing force of the probe pin contacting the LED chip due to the deviation of the height D of the LED chip in the process of contacting the probe pin and the LED chip of the probe card.
즉, 웨이퍼 기판과 엘이디 칩 사이에 존재할 수 있는 먼지 등의 이물질에 의해서 엘이디 칩들의 높이 편차가 발생하고, 이에 따라, 프로브핀과 엘이디 칩들 간의 접근 거리 오차가 발생하는 것이다. That is, height deviation of the LED chips is generated by foreign matter such as dust that may exist between the wafer substrate and the LED chip, and thus, an approach distance error between the probe pin and the LED chips is generated.
이에 의해, 프로브핀이 엘이디 칩에 접촉하는 가압력이 커지거나 작아지면, 엘이디 칩과 프로브핀의 파손이 발생하거나, 또는, 부정확한 전류 인가에 의해 정확한 측정이 이루어지지 않는다. As a result, when the pressing force at which the probe pin contacts the LED chip increases or decreases, breakage of the LED chip and the probe pin may occur, or an accurate measurement may not be performed by incorrect current application.
이에 도 2와 같이, 엘이디 칩(L)들을 포함하는 웨이퍼(W)를 검사장치(101)의 웨이퍼스테이지(130)에 적재한 상태에서 웨이퍼(W) 하부면 전면적을 진공척(120)으로 진공 흡착함으로써, 웨이퍼(W) 상면 즉, 엘이디 칩(L)들 상면 높이를 평탄화하는 방법이 제안된 바 있었다. 이때, 진공척 상면의 전면적은 오차 없이 평탄하게 유지되어야 한다. 2, the entire surface of the lower surface of the wafer W is vacuumed to the vacuum chuck 120 while the wafer W including the LED chips L is loaded on the wafer stage 130 of the inspection apparatus 101. By adsorption, a method of planarizing the top surface of the wafer W, that is, the top surface of the LED chips L, has been proposed. At this time, the entire area of the upper surface of the vacuum chuck should be kept flat without error.
그러나, 이러한 진공척을 이용하는 방법은 진공척의 가공오차나 진공척 상면에 존재할 수 있는 먼지 등의 이물질에 의해서 사실상 엘이디 칩들의 높이 편차를 해소하기는 어려운 문제점이 있었다. However, the method using the vacuum chuck has a problem that it is difficult to virtually eliminate the height variation of the LED chips due to foreign matters such as processing errors of the vacuum chuck or dust that may exist on the upper surface of the vacuum chuck.
본 발명의 목적은 프로브카드의 프로브핀과 엘이디 칩들의 컨텍 거리를 항상 일정하게 유지할 수 있는 엘이디 칩 검사장치를 제공함으로써, 엘이디 칩과 프로브핀의 파손을 방지하고, 엘이디 칩들의 특성이 정확하게 측정될 수 있도록 하는 것이다. SUMMARY OF THE INVENTION An object of the present invention is to provide an LED chip inspection apparatus capable of maintaining a constant contact distance between a probe pin and an LED chip of a probe card, thereby preventing breakage of the LED chip and the probe pin and accurately measuring the characteristics of the LED chips. To make it possible.
상기 목적은 본 발명에 따라, 측정 대상인 적어도 하나의 엘이디 칩과 전기적으로 컨텍하는 적어도 한 쌍의 프로브핀을 구비한 프로브카드, 상기 엘이디 칩들을 포함하는 웨이퍼를 적재하여 상기 프로브핀 컨텍위치로 이동시키는 웨이퍼스테이지, 상기 웨이퍼스테이지를 구동시키는 스테이지구동기, 상기 프로브핀에 컨텍된 엘이디 칩의 광특성과 전류특성을 측정하는 측정수단, 상기 웨이퍼 상에 적재된 엘이디 칩들의 좌표를 감지하는 감지수단, 상기 엘이디 칩들 중 상기 컨텍 위치로 이동된 엘이디 칩을 상기 프로브핀에 컨텍시키는 적어도 하나의 칩컨텍유닛, 상기 감지수단에서 감지된 좌표에 따라 스테이지구동기의 구동을 제어하여 상기 측정 대상 엘이디 칩을 상기 컨텍 위치로 이동시키고, 상기 칩컨텍유닛의 구동을 제어하여 상기 컨텍 위치의 엘이디 칩을 상기 프로프핀에 컨텍시키는 제어부를 포함하는 것을 특징으로 하는 엘이디 칩 검사장치에 의해 달성된다. According to the present invention, a probe card having at least one pair of probe pins electrically contacting at least one LED chip to be measured and a wafer including the LED chips are loaded to move to the probe pin contact position. A wafer stage, a stage driver for driving the wafer stage, measuring means for measuring the optical characteristics and current characteristics of the LED chip contacted to the probe pin, sensing means for detecting the coordinates of the LED chips loaded on the wafer, the LED At least one chip contact unit for contacting the probe pin with the LED chip moved to the contact position among the chips, and controlling the driving of the stage driver according to the coordinates detected by the sensing means to move the target LED chip to the contact position. The contact position by controlling the driving of the chip contact unit It is achieved by the LED chips in the LED chip testing apparatus comprising: a control section for the context to the pro peupin.
여기서, 감지수단은 웨이퍼상의 엘이디 칩들 각각의 좌표를 감지하여 제어부로 전달하는 좌표감지기를 갖는 것이 바람직하다. Here, the sensing means preferably has a coordinate sensor that detects the coordinates of each of the LED chips on the wafer and transfers them to the controller.
또한, 감지수단은 좌표감지기에서 감지된 각 좌표 상의 엘이디 칩들 각각의 높이값을 감지하여 제어부로 전달하는 레벨감지기를 포함하는 것이 효과적이다.In addition, the sensing means is effective to include a level sensor for detecting the height value of each of the LED chip on each coordinate detected by the coordinate sensor to transmit to the controller.
그리고, 제어부는 감지수단에서 전달되는 각 엘이디 칩의 좌표값에 기초하여 측정 대상의 엘이디 칩이 컨텍 위치로 이동하도록 스테이지구동기의 구동을 제어하며, 감지수단에서 전달된 각 좌표의 엘이디 칩 높이값과, 미리 저장된 프로브핀과 엘이디 칩의 컨텍거리 기준값에 기초하여 칩컨텍유닛의 상승 구동을 제어하는 것이 보다 바람직하다.The controller controls the driving of the stage driver to move the LED chip of the measurement target to the contact position based on the coordinate values of the LED chips transmitted from the sensing means, and the LED chip height value of each coordinate transmitted from the sensing means. It is more preferable to control the driving of the chip contact unit based on the contact distance reference value between the pre-stored probe pin and the LED chip.
이때, 프로브핀과 엘이디 칩의 컨텍거리 기준 값은 제어부에 미리 입력되어 있는 정상적인 높이값을 갖는 엘이디 칩과 프로브핀 간의 거리값인 것이 보다 효과적이다.In this case, the contact distance reference value between the probe pin and the LED chip may be more effectively the distance value between the LED chip and the probe pin having a normal height value previously input to the controller.
또한, 제어부는 측정대상인 엘이디 칩의 높이값과 미리 입력되어 있는 정상적인 엘이디 칩의 높이값을 비교하여 칩컨텍유닛의 구동 높이를 제어하는 것이 바람직하다. The controller may control the driving height of the chip contact unit by comparing the height value of the LED chip to be measured with the height value of the normal LED chip previously input.
한편, 칩컨텍유닛은 컨텍 위치로 이동된 엘이디 칩에 대응하는 웨이퍼 하부 영역에 접촉 및 이격되도록 승강하여 상기 엘이디 칩을 프로브핀에 접근 및 이격 시키는 칩컨텍핀과, 상기 칩컨텍핀을 승강시키는 컨텍구동기를 갖는 것이 효과적이다.On the other hand, the chip contact unit is lifted to contact and spaced apart from the wafer lower region corresponding to the LED chip moved to the contact position, the chip contact pin for approaching and spaced apart the LED chip probe pin, and the contact for lifting the chip contact pin It is effective to have a driver.
그리고, 칩컨텍유닛은 컨텍 위치로 이동된 엘이디 칩에 대응하는 웨이퍼 하부 영역에 접촉 및 이격되며, 내측에 칩컨텍핀을 승강 가능하게 수용하는 핀승강구가 형성되어 있고, 상부면으로부터 상기 핀승강구를 향해 상기 칩컨텍핀의 상단부가 출입하는 핀홀이 형성되어 있는 흡착가이드를 포함하는 것이 보다 바람직하다.In addition, the chip contact unit is contacted and spaced apart from the wafer lower region corresponding to the LED chip moved to the contact position, and a pin lifting hole is formed therein to receive the chip contact pin so as to be able to lift and lower the pin latch from the upper surface. More preferably, it includes an adsorption guide having a pin hole through which the upper end of the chip contact pin enters and exits.
이때, 칩컨텍핀 상단면은 상기 엘이디 칩의 면적에 대응하는 것이 보다 효과적이다.In this case, it is more effective that the upper surface of the chip contact pin corresponds to the area of the LED chip.
또한, 흡착가이드는 핀승강구가 외부의 진공흡입수단과 진공라인으로 연결되며, 핀홀을 통해 컨텍 위치의 엘이디 칩 하부영역을 흡착하는 것이 바람직하다.In addition, the suction guide is a pin lifting hole is connected to the vacuum suction means and the vacuum line of the outside, it is preferable to suck the LED chip lower region of the contact position through the pinhole.
또한, 측정 대상인 엘이디 칩은 복수로 선택되고, 프로브핀은 상기 측정 대상인 엘이디 칩들에 대응하는 복수 쌍으로 마련되며, 칩컨텍유닛은 상기 측정 대상인 엘이디 칩들에 대응하는 복수로 마련될 수 있다. In addition, a plurality of LED chips to be measured may be selected, the probe pin may be provided in a plurality of pairs corresponding to the LED chips to be measured, and the chip contact unit may be provided in a plurality corresponding to the LED chips to be measured.
본 발명에 따르면, 프로브카드의 프로브핀과 엘이디 칩들의 컨텍 거리를 항상 일정하게 유지할 수 있는 엘이디 칩 검사장치를 제공된다. 이에 의해, 엘이디 칩과 프로브핀의 파손이 방지되고, 엘이디 칩들의 특성이 정확하게 측정된다. According to the present invention, there is provided an LED chip inspection apparatus that can maintain a constant contact distance between the probe pin and the LED chip of the probe card at all times. As a result, breakage of the LED chip and the probe pin is prevented, and the characteristics of the LED chips are accurately measured.
도 1은 확장 작업된 엘이디 칩들이 적재된 웨이퍼 사시도,1 is a perspective view showing a wafer loaded with extended LED chips;
도 2는 종래 엘이디 칩 검사장치의 요부 측면도, Figure 2 is a side view of the main portion of the conventional LED chip inspection device,
도 3은 본 발명에 따른 엘이디 칩 검사장치의 측면도, Figure 3 is a side view of the LED chip testing apparatus according to the present invention,
도 4 내지 도 6은 본 발명에 따른 엘이디 칩 검사장치의 요부 영역 확대도, 4 to 6 is an enlarged view of the main region of the LED chip testing apparatus according to the present invention,
도 7은 본 발명에 따른 엘이디 칩 검사장치의 제어블록도, 7 is a control block diagram of the LED chip inspection apparatus according to the present invention,
도 8은 본 발명에 따른 엘이디 칩 검사장치의 제어흐름도,8 is a control flow chart of the LED chip inspection apparatus according to the present invention,
도 9는 본 발명의 다른 실시예에 따른 엘이디 칩 검사장치의 측면도. Figure 9 is a side view of the LED chip testing apparatus according to another embodiment of the present invention.
이하에서는 첨부된 도면을 참고하여 본 발명에 대해 상세하게 설명한다. Hereinafter, with reference to the accompanying drawings will be described in detail with respect to the present invention.
도 3 내지 도 7에 도시된 바와 같이, 본 실시예에 따른 엘이디 칩 검사장치(1)는 확장 작업된 웨이퍼(W) 상에 적재되어 있는 엘이디 칩(L)을 전기적으로 컨텍하는 프로브카드(10)와, 프로브카드(10)에 컨텍된 엘이디 칩(L)의 광특성과 전류특성을 측정하는 측정수단(20)과, 웨이퍼(W) 상에 적재된 엘이디 칩(L)들을 개별적으로 프로브카드(10)의 컨텍 위치로 이동시키는 웨이퍼스테이지(30)와, 웨이퍼스테이지(30)를 구동시키는 스테이지구동기(40)와, 웨이퍼(W) 상에 적재된 엘이디 칩(L)들의 좌표와 높이를 감지하는 감지수단(50)과, 프로브카드(10)의 컨텍 위치로 이동된 측정 대상 엘이디 칩(L)을 프로브카드(10)에 컨텍시키는 칩컨텍유닛(60)과, 감지수단(50)에서 감지된 엘이디 칩(L)의 좌표 및 높이 데이터에 따라 스테이지구동기(40)와 칩컨텍유닛(60)을 구동시키는 제어부(70)를 포함한다. 3 to 7, the LED chip inspection apparatus 1 according to the present embodiment includes a probe card 10 which electrically contacts the LED chip L loaded on the expanded wafer W. As shown in FIG. ), The measuring means 20 for measuring the optical characteristics and current characteristics of the LED chip (L) contacted to the probe card 10, and the LED chip (L) loaded on the wafer (W) individually probe card Coordinate and height of the wafer stage 30 to move to the contact position of the (10), the stage driver 40 to drive the wafer stage 30, and the LED chip (L) loaded on the wafer (W) The sensing means 50, the chip contact unit 60 contacting the probe card 10 with the measurement target LED chip L moved to the contact position of the probe card 10, and the sensing means 50. To drive the stage driver 40 and the chip contact unit 60 according to the coordinates and the height data of the led chip L And a 70.
프로브카드(10)는 그 중앙 영역에 엘이디 칩(L)이 위치하는 측정홀(15)을 갖는 반사판(13)과, 반사판(13)의 측정홀(15) 내에 위치한 엘이디 칩(L)에 전류를 인가하도록 컨텍되는 프로브핀(11)을 구비한다. 이 프로브카드(10)는 경우에 따라 반사판(13)의 구성을 생략하고 프로브핀(11)만을 구비할 수도 있다. The probe card 10 includes a reflecting plate 13 having a measuring hole 15 in which the LED chip L is located in a central region thereof, and an LED chip L located in the measuring hole 15 of the reflecting plate 13. It has a probe pin 11 that is contacted to apply. In some cases, the probe card 10 may include only the probe pin 11 without the configuration of the reflective plate 13.
프로브핀(11)은 도시하지 않은 전원공급부로부터 전달되는 전원을 엘이디 칩(L)으로 인가한다. 그리고, 프로브핀(11)은 엘이디 칩(L)으로 인가되는 전원에 대한 전류 측정값을 후술할 측정수단(20)의 전류측정유닛(23)으로 전달하도록 전류측정유닛(23)과 전기적으로 연결되어 있다. The probe pin 11 applies power transmitted from a power supply (not shown) to the LED chip (L). In addition, the probe pin 11 is electrically connected to the current measuring unit 23 so as to transfer the current measured value for the power applied to the LED chip L to the current measuring unit 23 of the measuring means 20 which will be described later. It is.
측정수단(20)은 엘이디 칩(L)으로부터 발광되는 빛과 프로브카드(10)의 반사판(13)으로부터 반사되는 빛의 스펙트럼을 채집하여 엘이디 칩(L)의 광특성을 측정하는 광측정유닛(21)과, 엘이디 칩(L)의 전류값에 대한 특성을 측정하는 전류측정유닛(23)을 가지고 있다.The measuring unit 20 collects a spectrum of light emitted from the LED chip L and reflected from the reflector 13 of the probe card 10 to measure an optical characteristic of the LED chip L ( 21) and a current measuring unit 23 for measuring the characteristics of the current value of the LED chip L.
광측정유닛(21)은 프로브카드(10) 상부 영역에 구형상의 적분구로 마련되어 엘이디 칩(L) 및 반사판(13)으로부터 전달되는 빛에 대한 광특성을 측정한다. 그리고, 전류측정유닛(23)은 프로브카드(10)의 프로브핀(11)으로부터 전달되는 엘이디 칩(L)의 전류특성값을 측정한다. The optical measuring unit 21 is provided as a spherical integrating sphere in the upper region of the probe card 10 to measure optical characteristics of light transmitted from the LED chip L and the reflector 13. The current measuring unit 23 measures a current characteristic value of the LED chip L transmitted from the probe pin 11 of the probe card 10.
웨이퍼스테이지(30)는 엘이디 칩(L) 검사공정 중 공급부(미도시)로부터 전달된 엘이디 칩(L)들을 포함한 웨이퍼(W)를 적재한다. 이 웨이퍼스테이지(30)는 스테이지구동기(40)의 구동에 의해 X,Y,Z,θ축 방향으로 이동함으로써, 웨이퍼스테이지(30)에 적재된 웨이퍼(W)를 프로브카드(10) 하부 영역에서 X,Y,Z,θ축 방향으로 이동시킨다. The wafer stage 30 loads the wafer W including the LED chips L transferred from a supply unit (not shown) during the LED chip L inspection process. The wafer stage 30 is moved in the X, Y, Z, and θ directions by the driving of the stage driver 40 to move the wafer W loaded on the wafer stage 30 in the lower region of the probe card 10. Move in the X, Y, Z, and θ directions.
그리고, 스테이지구동기(40)는 웨이퍼스테이지(30)의 X,Y,Z,θ축 구동을 정밀 제어하여 웨이퍼스테이지(30)에 적재된 웨이퍼(W) 상의 엘이디 칩(L)들 각각을 프로브카드(10)의 측정홀(15) 하부 영역에 위치하도록 이동시킬 수 있다. Then, the stage driver 40 precisely controls the X, Y, Z, θ axis driving of the wafer stage 30 to probe each of the LED chip (L) on the wafer (W) loaded on the wafer stage 30 It may be moved to be located in the lower region of the measurement hole 15 of (10).
감지수단(50)은 웨이퍼(W)상의 엘이디 칩(L)들 각각의 좌표를 감지하여 제어부(70)로 전달하는 좌표감지기(51)와, 좌표감지기(51)에서 감지된 각 좌표 상의 엘이디 칩(L)들 각각의 높이를 감지하여 각 좌표 상의 엘이디 칩(L)들 높이값을 제어부(70)로 전달하는 레벨감지기(53)로 구성될 수 있다. The sensing unit 50 detects the coordinates of each of the LED chips L on the wafer W and transmits the coordinates to the controller 70, and the LED chips on the respective coordinates detected by the coordinate sensor 51. The level sensor 53 may sense the height of each of the L and transmit the height values of the LED chips L on each coordinate to the controller 70.
좌표감지기(51)는 웨이퍼(W) 상의 엘이디 칩(L)들에 대해 이미지를 획득하고 각 엘이디 칩(L)들의 이미지 맵에 대한 좌표테이터(이하 '좌표값'이라 함)를 설정하여 이 좌표값을 제어부(70)로 전달하는 비젼 카메라 또는 비젼 스캐너일 수 있다. The coordinate sensor 51 acquires an image of the LED chips L on the wafer W and sets coordinate data (hereinafter referred to as 'coordinate value') for the image map of each of the LED chips L. It may be a vision camera or a vision scanner that transmits a value to the control unit 70.
그리고, 레벨감지기(53)는 웨이퍼(W) 상의 엘이디 칩(L)들 각각에 레이저 조사하여 각 좌표 상에 위치한 엘이디 칩(L) 각각에 대한 높이값을 제어부(70)로 전달하는 레이저 변위센서일 수 있다. In addition, the level sensor 53 laser irradiates each of the LED chips L on the wafer W to transmit a height value for each of the LED chips L positioned on each coordinate to the controller 70. Can be.
한편, 칩컨텍유닛(60)은 프로브카드(10) 하부 영역에 웨이퍼(W) 배치 공간에 대응하는 이격 거리를 두고 설치된다. 이 칩컨텍유닛(60)은 웨이퍼(W) 상에 적재된 엘이디 칩(L)들 중 프로브카드(10)의 측정홀(15) 하부에 위치하는 측정대상인 엘이디 칩(L)이 적재된 영역의 웨이퍼 기판 하부면을 흡착하는 흡착가이드(61)와, 흡착가이드(61)에 승강가능하게 결합되어 흡착가이드(61)에 흡착된 영역의 엘이디 칩(L)을 상향 가압함으로써 프로브핀(11)에 컨텍시키는 칩컨텍핀(63)과, 칩컨텍핀(63)을 승강시키는 컨텍구동기(65)를 가지고 있다. On the other hand, the chip contact unit 60 is installed in the lower region of the probe card 10 at a distance corresponding to the wafer (W) arrangement space. The chip contact unit 60 includes a region in which the LED chip L, which is a measurement target, located under the measurement hole 15 of the probe card 10 among the LED chips L loaded on the wafer W. The suction guide 61 which adsorbs the lower surface of the wafer substrate and the LED chip L in the area adsorbed by the suction guide 61 so as to be lifted and lowered on the suction guide 61 are upwardly pressed onto the probe pin 11. It has the chip contact pin 63 to contact, and the contact driver 65 which raises and lowers the chip contact pin 63. As shown in FIG.
흡착가이드(61)는 그 상부면이 엘이디 칩(L)의 하부면에 비해 넓은 면적을 가지고 있으며, 그 내측에 칩컨텍핀(63)이 승강 가능하게 수용되는 핀승강구(61a)가 형성되어 있다. 이 핀승강구(61a)는 외부의 진공흡입수단(미도시)과 진공라인(미도시)으로 연결된다. 또한, 흡착가이드(61)의 상부영역에는 상부면으로부터 내부의 핀승강구(61a)를 향해 관통된 핀홀(61b)이 형성되어 있다. The suction guide 61 has a larger area than the lower surface of the LED chip L, and a pin lifting hole 61a in which the chip contact pin 63 can be lifted and received is formed therein. . The pin lifting hole 61a is connected to an external vacuum suction means (not shown) and a vacuum line (not shown). In the upper region of the suction guide 61, a pinhole 61b penetrated from the upper surface toward the pin lifting hole 61a therein is formed.
그리고, 칩컨텍핀(63)은 상단부 영역이 흡착가이드(61)의 핀홀(61b)을 통해 승강 출입하며 그 하단부가 컨텍구동기(65)에 대해 승강력으로 전달받도록 결합되어 있다. 이때, 칩컨텍핀(63) 상단부는 엘이디 칩(L)의 하부면적에 대응하는 면적으로 형성됨으로써, 프로브핀(11) 측으로 엘이디 칩(L)을 안정적으로 상향 가압한다. In addition, the chip contact pin 63 is lifted in and out through the pinhole 61b of the suction guide 61, and the lower end is coupled to receive the lift force with respect to the contact driver 65. In this case, the upper end of the chip contact pin 63 is formed to have an area corresponding to the lower area of the LED chip L, thereby stably upwardly pressing the LED chip L toward the probe pin 11.
또한, 컨텍구동기(65)는 제어부(70)로부터 전달되는 구동신호에 따라서 칩컨텍핀(63)의 승강 거리를 정밀하게 조절할 수 있도록 마련된다. 또한, 컨텍구동기(65)는 흡착가이드(61)를 승강시켜서 흡착가이드(61)의 상부면이 엘이디 칩(L) 하부면과 이 영역의 웨이퍼 기판에 접촉 및 이격되도록 한다. 이를 위해 컨텍구동기(65)는 흡착가이드(61)의 승강과 칩컨텍핀(63)의 승강을 별개로 구동시킬 수 있는 다단 구동기 형태로 마련될 수 있다. 여기서, 컨텍구동기(65)는 회전 운동을 직선운동으로 변환하여 흡착가이드(61)와 칩컨텍핀(63)으로 전달하는 정역모터와 이송스크류의 조합으로 구성되거나, 정역모터와 래크와 피니언, 또는 정역모터와 캠 등의 조함으로 구성될 수 있다. 이때, 컨텍구동기(65)는 측정대상의 엘이디 칩(L) 높이를 고려하여 칩컨텍핀(63)의 상승거리를 정밀하게 조절할 수 있는 구성으로 마련되는 것이 바람직하다. In addition, the contact driver 65 is provided to precisely adjust the lifting distance of the chip contact pin 63 according to the driving signal transmitted from the controller 70. In addition, the contact driver 65 raises and lowers the suction guide 61 so that the upper surface of the suction guide 61 is in contact with and spaced apart from the lower surface of the LED chip L and the wafer substrate in this region. To this end, the contact driver 65 may be provided in the form of a multi-stage driver capable of driving the lift of the suction guide 61 and the lift of the chip contact pin 63 separately. Here, the contact driver 65 is composed of a combination of the forward and reverse motor and the transfer screw to convert the rotational motion into a linear motion to transfer to the suction guide 61 and the chip contact pin 63, or the forward and reverse motor, rack and pinion, or It can be configured with a combination of a forward and a reverse motor and a cam. At this time, the contact driver 65 is preferably provided with a configuration that can accurately adjust the rising distance of the chip contact pin 63 in consideration of the height of the LED chip (L) of the measurement target.
이러한, 칩컨텍유닛(60)은 보다 간략한 구성으로서 도시하지는 않았지만, 흡착가이드(61)를 생략하고 칩컨텍핀(63)과 컨텍구동기(65)만으로 구성될 수도 있다. Although the chip contact unit 60 is not shown as a simpler configuration, the suction guide 61 may be omitted, and the chip contact unit 60 may include only the chip contact pin 63 and the contact driver 65.
한편, 제어부(70)는 감지수단(50)의 좌표감지기(51)와 레벨감지기(53)에서 전달되는 웨이퍼(W) 상의 각 엘이디 칩(L) 좌표값과, 각 좌표에 위치하는 엘이디 칩(L)의 높이값과, 프로브핀(11)과 엘이디 칩(L)의 컨텍거리 기준값에 기초하여 스테이지구동기(40)와 칩컨텍유닛(60)의 구동을 제어한다. On the other hand, the control unit 70 is a coordinate value of each LED chip (L) on the wafer (W) transmitted from the coordinate sensor 51 and the level sensor 53 of the sensing means 50, and the LED chip (located at each coordinate ( The driving of the stage driver 40 and the chip contact unit 60 is controlled based on the height value of L) and the contact distance reference value between the probe pin 11 and the LED chip L. FIG.
여기서, 프로브핀(11)과 엘이디 칩(L)의 컨텍거리 기준 값은 미리 설정되어 있는 엘이디 칩(L)과 프로브핀(11) 간의 기준 거리로서, 제어부(70)에 미리 입력되어 있는 정상적인 높이값을 갖는 엘이디 칩(L)과 프로브핀(11) 간의 거리값에 해당한다. Here, the contact distance reference value between the probe pin 11 and the LED chip L is a reference distance between the LED chip L and the probe pin 11 which is set in advance, and is a normal height previously input to the controller 70. Corresponds to the distance between the LED chip (L) having a value and the probe pin (11).
즉, 제어부(70)는 웨이퍼(W) 상의 엘이디 칩(L)들 중 측정대상인 엘이디 칩(L)의 좌표값에 기초하여 스테이지구동기(40)를 구동 제어하여 측정 대상의 엘이디 칩(L)이 프로브카드(10)의 측정홀(15) 하부에 위치시킨다. 그런 다음, 레벨감지기(53)에서 전달된 측정 대상 엘이디 칩(L)의 높이값과 컨텍거리 기준값을 비교하여 칩컨텍유닛(60)의 컨텍구동기(65)의 상승 구동 높이를 제어함으로써, 측정대상 엘이디 칩(L)이 안정적으로 프로브카드(10)의 프로브핀(11)에 컨텍되도록 한다. That is, the controller 70 controls the stage driver 40 to be driven based on the coordinate values of the LED chip L as the measurement target among the LED chips L on the wafer W so that the LED chip L as the measurement target is controlled. It is located under the measuring hole 15 of the probe card 10. Then, by comparing the height value of the measurement target LED chip L and the contact distance reference value transmitted from the level sensor 53, by controlling the driving height of the contact driver 65 of the chip contact unit 60, the measurement target The LED chip L is stably contacted to the probe pin 11 of the probe card 10.
이러한 구성을 갖는 본 실시예에 따른 엘이디 칩 검사장치(1)의 구동 과정을 도 4 내지 도 6 및 도 8을 참고하여 살펴본다. The driving process of the LED chip inspection apparatus 1 according to the present embodiment having such a configuration will be described with reference to FIGS. 4 to 6 and 8.
측정 대상인 엘이디 칩(L)들이 적재된 웨이퍼(W)가 엘이디 칩 검사장치(1)의 웨이퍼스테이지(30)로 전달되기 전이나 전달되는 과정, 또는 전달된 후에 감지수단(50)의 좌표감지기(51)와 레벨감지기(53)는 웨이퍼(W)상의 엘이디 칩(L)들 각각에 대한 좌표값과 높이값을 감지하고 이를 데이터화하여 제어부(70)로 전달하고, 제어부(70)는 웨이퍼(W) 각 좌표상의 엘이디 칩(L)들의 각각의 높이값을 저장한다(S01). 이때, 제어부(70)에는 정상적인 높이값을 갖는 엘이디 칩(L)과 프로브핀(11) 간의 컨텍거리 기준값이 미리 저장되어 있다. Coordinate sensor of the sensing means 50 before, during, or after the wafer W on which the LEDs to be measured are loaded is transferred to the wafer stage 30 of the LED chip inspection apparatus 1. 51 and the level sensor 53 detect the coordinate value and the height value for each of the LED chips L on the wafer W, convert the data into data, and transmit the data to the controller 70, and the controller 70 transmits the wafer W. The height value of each of the LED chips L on each coordinate is stored (S01). At this time, the control unit 70 has previously stored the contact distance reference value between the LED chip (L) having a normal height value and the probe pin (11).
웨이퍼(W)가 엘이디 칩 검사장치(1)의 웨이퍼스테이지(30)에 적재되면, 제어부(70)는 웨이퍼(W) 상의 각 좌표에 적재된 측정 대상인 엘이디 칩(L)들이 차례로 프로브카드(10)의 측정홀(15) 하부 영역에 위치하도록 스테이지구동기(40)의 구동을 제어한다(S02). When the wafer W is loaded on the wafer stage 30 of the LED chip inspection apparatus 1, the controller 70 sequentially turns the LED chips L to be measured at each coordinate on the wafer W into the probe card 10. The driving of the stage driver 40 is controlled to be located in the lower region of the measuring hole 15 (S02).
스테이지구동기(40)의 구동에 의해 도 4와 같이, 측정 대상인 엘이디 칩(L)이 프로브카드(10)의 측정홀(15) 하부에 위치하면, 제어부(70)는 레벨감지기(53)에서 전달된 해당 엘이디 칩(L)의 높이값과 미리 입력되어 있는 정상적인 엘이디 칩(L)의 높이값을 비교한다(S03). As shown in FIG. 4 by driving the stage driver 40, when the LED chip L to be measured is located under the measurement hole 15 of the probe card 10, the control unit 70 transmits the level sensor 53. The height value of the corresponding LED chip L is compared with the height value of the normal LED chip L previously input (S03).
이때, 해당 엘이디 칩(L)의 높이값이 정상적인 엘이디 칩(L)의 높이값과 동일하면, 제어부(70)는 미리 설정되어 있는 컨텍거리 기준값에 대응하는 높이로 칩컨텍유닛(60)의 컨텍구동기(65) 구동을 제어하여 흡착가이드(61)와 칩컨텍핀(63)을 상승시킨다(S04). At this time, if the height value of the corresponding LED chip L is the same as the height value of the normal LED chip L, the controller 70 contacts the chip contact unit 60 at a height corresponding to a preset contact distance reference value. The driving of the driver 65 is controlled to raise the suction guide 61 and the chip contact pin 63 (S04).
그러면, 흡착가이드(61)가 도 5와 같이, 측정 대상인 엘이디 칩(L) 하부의 웨이퍼 기판에 접촉하여 해당 엘이디 칩(L)과 웨이퍼 기판을 흡착한다. 이는 칩컨텍핀(63)의 상승시 엘이디 칩(L)과 웨이퍼(W) 간에 개재되는 접착물질의 들뜸을 방지하기 위한 것이다. Then, as shown in FIG. 5, the adsorption guide 61 contacts the wafer substrate under the LED chip L to be measured to adsorb the LED chip L and the wafer substrate. This is to prevent the lifting of the adhesive material interposed between the LED chip (L) and the wafer (W) when the chip contact pin 63 rises.
흡착가이드(61)의 상승 후 컨텍구동기(65)는 도 6과 같이, 칩컨텍핀(63)을 상승시켜서 엘이디 칩(L)이 프로브카드(10)의 측정홀(15) 내에서 프로브핀(11)과 컨텍되도록 한다. After the adsorption guide 61 is raised, the contact driver 65 raises the chip contact pin 63 as shown in FIG. 6 so that the LED chip L is connected to the probe pins in the measuring hole 15 of the probe card 10. 11) to make contact.
한편, 측정 대상인 해당 엘이디 칩(L)의 높이값이 정상적인 엘이디 칩(L)의 높이값과 다르면, 제어부(70)는 차이가 나는 엘이디 칩(L)의 높이값을 고려하여 미리 설정되어 있는 컨텍거리 기준값에 대응할 수 있도록 칩컨텍유닛(60)의 컨텍구동기(65) 구동을 제어하여 흡착가이드(61)와 칩컨텍핀(63)의 상승높이를 조절한다(S04'). On the other hand, if the height value of the corresponding LED chip (L) to be measured is different from the height value of the normal LED chip (L), the control unit 70 is set in consideration of the height value of the LED chip (L) having a difference In order to correspond to the distance reference value, the contact height of the contact driver 65 of the chip contact unit 60 is controlled to adjust the height of the suction guide 61 and the chip contact pin 63 (S04 ′).
그러면, 흡착가이드(61)가 도 5와 같이, 측정 대상인 엘이디 칩(L) 하부의 웨이퍼 기판에 접촉하여 해당 엘이디 칩(L)과 웨이퍼 기판을 흡착한 후, 상승 높이 조절치에 대응하는 높이로 칩컨텍핀(63)이 도 6과 같이, 상승되어 해당 엘이디 칩(L)이 프로브카드(10)의 측정홀(15) 내에서 프로브핀(11)과 안정적으로 컨텍된다. Then, as shown in FIG. 5, the adsorption guide 61 contacts the wafer substrate under the LED chip L to be measured to adsorb the LED chip L and the wafer substrate, and then raises the height corresponding to the rising height adjustment value. As shown in FIG. 6, the chip contact pin 63 is raised to stably contact the probe pin 11 in the measurement hole 15 of the probe card 10.
이러한 과정에 의해 웨이퍼(W) 상의 엘이디 칩(L)들은 높이편차에 상관없이 안정적으로 프로브핀(11)에 컨텍됨으로써, 엘이디 칩(L)과 프로브핀(11)의 파손을 방지함과 동시에, 광측정유닛(21)과 전류측정유닛(23)에서 엘이디 칩(L)의 광특성과 전류특성을 정확하게 측정할 수 있다. By this process, the LED chips L on the wafer W are stably contacted with the probe pins 11 regardless of the height deviation, thereby preventing breakage of the LED chips L and the probe pins 11, In the optical measuring unit 21 and the current measuring unit 23, the optical characteristics and the current characteristics of the LED chip L can be accurately measured.
한편, 도 9는 본 발명의 다른 실시예에 따른 엘이디 칩 검사장치의 측면도이다. 이들 도면에 도시된 바와 같이, 본 실시예에 따른 엘이디 칩 검사장치는 복수의 엘이디 칩(L)을 전기적으로 컨텍하는 프로브카드(10)와, 프로브카드(10)에 컨텍된 엘이디 칩(L)들의 광특성과 전류특성을 측정하는 측정수단(20)과, 웨이퍼(W) 상에 적재된 엘이디 칩(L)들 중 검사 대상인 복수의 엘이디 칩들을 프로브카드(10)의 컨텍 위치로 이동시키는 웨이퍼스테이지(30)와, 웨이퍼스테이지(30)를 구동시키는 스테이지구동기(40)와, 웨이퍼(W) 상에 적재된 엘이디 칩(L)들의 좌표와 높이를 감지하는 감지수단(50)과, 프로브카드(10)의 컨텍 위치로 이동된 측정 대상 엘이디 칩(L)들을 프로브카드(10)에 컨텍시키는 복수의 칩컨텍유닛(60)과, 감지수단(50)에서 감지된 엘이디 칩(L)의 좌표 및 높이 데이터에 따라 스테이지구동기(40)와 칩컨텍유닛(60)을 구동시키는 제어부(70)를 포함한다. On the other hand, Figure 9 is a side view of the LED chip testing apparatus according to another embodiment of the present invention. As shown in these drawings, the LED chip inspection apparatus according to the present embodiment includes a probe card 10 electrically contacting a plurality of LED chips L and an LED chip L contacted to the probe card 10. Measuring means 20 for measuring the optical characteristics and current characteristics of these, and a wafer for moving a plurality of LED chips to be inspected of the LED chip (L) loaded on the wafer (W) to the contact position of the probe card 10 A stage driver 40 driving the stage 30, the wafer stage 30, sensing means 50 for detecting the coordinates and the height of the LED chips L loaded on the wafer W, and a probe card. Coordinates of the plurality of chip contact unit 60 for contacting the probe LED 10 with the measurement target LED chips L moved to the contact position of 10 and the coordinates of the LED chip L detected by the sensing means 50. And a controller 70 for driving the stage driver 40 and the chip contact unit 60 according to the height data. It includes.
본 실시예에 따른 엘이디 칩 검사장치는 프로브카드(10)와 칩컨텍유닛(60)의 구조와, 장치의 제어구동을 제외하고 나머지 구성은 전술한 도 4 내지 도 8의 엘이디 칩 검사장치(1)와 거의 동일하므로 이하에서는 프로브카드(10)와 칩컨텍유닛(60)의 구조 및 장치의 제어구동에 대해서만 설명한다. The LED chip inspection apparatus according to the present embodiment has the structure of the probe card 10 and the chip contact unit 60, and the rest of the configuration except the control driving of the apparatus is the LED chip inspection apparatus 1 of FIGS. Since it is almost the same as), only the structure of the probe card 10 and the chip contact unit 60 and the control drive of the apparatus will be described below.
프로브카드(10)는 그 중앙 영역에 엘이디 칩(L)이 위치하는 측정홀(15)을 갖는 반사판(13)과, 반사판(13)의 측정홀(15) 내에 위치한 복수의 엘이디 칩(L)들에 전류를 인가하도록 컨텍되는 복수 쌍의 프로브핀(11)을 구비하고 있다. 프로브핀(11)은 도시하지 않은 전원공급부로부터 전달되는 전원을 엘이디 칩(L)으로 인가한다. 그리고, 프로브핀(11)은 엘이디 칩(L)으로 인가되는 전원에 대한 전류 측정값을 후술할 측정수단(20)의 전류측정유닛(23)으로 전달하도록 전류측정유닛(23)과 전기적으로 연결되어 있다. The probe card 10 includes a reflecting plate 13 having a measuring hole 15 in which an LED chip L is positioned in a central region thereof, and a plurality of LED chips L disposed in the measuring hole 15 of the reflecting plate 13. And a plurality of pairs of probe pins 11 which are contacted to apply a current to the field. The probe pin 11 applies power transmitted from a power supply (not shown) to the LED chip (L). In addition, the probe pin 11 is electrically connected to the current measuring unit 23 so as to transfer the current measured value for the power applied to the LED chip L to the current measuring unit 23 of the measuring means 20 which will be described later. It is.
그리고, 칩컨텍유닛(60)은 프로브카드(10) 하부 영역에 웨이퍼(W) 배치 공간에 대응하는 이격 거리를 두고 복수로 설치될 수 있다. 이 칩컨텍유닛(60)들은 각각 전술한 실시 예에 따른 엘이디 칩 검사장치(1)의 칩컨텍유닛(60)과 마찬가지로 흡착가이드(61)와, 칩컨텍핀(63)과, 컨텍구동기(65)를 구비할 수 있으며, 그 구성 및 구조는 동일할 수 있으므로 그 설명은 생략한다. In addition, the chip contact unit 60 may be installed in a plurality of spaced distances corresponding to the wafer W arrangement spaces in the lower region of the probe card 10. These chip contact units 60 are similar to the chip contact unit 60 of the LED chip inspection apparatus 1 according to the above-described embodiment, respectively, the suction guide 61, the chip contact pin 63, and the contact driver 65. ), And its configuration and structure may be the same, so a description thereof will be omitted.
한편, 제어부(70)는 감지수단(50)의 좌표감지기(51)와 레벨감지기(53)에서 전달되는 웨이퍼(W) 상의 각 엘이디 칩(L)들의 좌표값과, 각 좌표에 위치하는 엘이디 칩(L)의 높이값과, 프로브핀(11)들과 엘이디 칩(L)의 컨텍거리 기준값에 기초하여 스테이지구동기(40)와 칩컨텍유닛(60)들의 구동을 제어한다. On the other hand, the control unit 70 is a coordinate value of each of the LED chip (L) on the wafer (W) transferred from the coordinate sensor 51 and the level sensor 53 of the sensing means 50, and the LED chip located at each coordinate The driving of the stage driver 40 and the chip contact unit 60 is controlled based on the height value of L and the contact distance reference values of the probe pins 11 and the LED chip L. FIG.
여기서, 프로브핀(11)들과 엘이디 칩(L)의 컨텍거리 기준 값은 미리 설정되어 있는 엘이디 칩(L)과 프로브핀(11) 간의 기준 거리로서, 제어부(70)에 미리 입력되어 있는 정상적인 높이값을 갖는 엘이디 칩(L)과 프로브핀(11) 간의 거리값에 해당한다. Here, the contact distance reference values of the probe pins 11 and the LED chip L are reference distances between the LED chip L and the probe pin 11 which are preset, and are normally input to the controller 70. Corresponds to the distance value between the LED chip (L) having a height value and the probe pin (11).
즉, 제어부(70)는 웨이퍼(W) 상의 엘이디 칩(L)들 중 측정대상인 엘이디 칩(L)들 각각의 좌표값에 기초하여 스테이지구동기(40)를 구동 제어하여 측정 대상인 엘이디 칩(L)들을 프로브카드(10)의 측정홀(15) 하부에 위치시킨다. 그런 다음, 레벨감지기(53)에서 전달된 측정 대상 엘이디 칩(L)들 각각의 높이값과 컨텍거리 기준값을 비교하여 각 칩컨텍유닛(60)의 상승 구동 높이를 제어함으로써, 측정대상인 엘이디 칩(L)들 각각이 안정적으로 해당 프로브핀(11)에 컨텍되도록 한다. That is, the controller 70 controls the driving of the stage driver 40 based on the coordinate values of each of the LED chips L to be measured among the LED chips L on the wafer W to measure the LED chip L to be measured. To the bottom of the measuring hole 15 of the probe card 10. Then, by comparing the height value of each of the target LED chip (L) and the contact distance reference value transmitted from the level sensor 53 to control the driving height of each chip contact unit 60, the LED chip (measurement target) Each of the L) is stably contacted to the corresponding probe pin 11.
이에 의해, 웨이퍼(W) 상의 엘이디 칩(L)들은 높이편차에 상관없이 안정적으로 해당 프로브핀(11)에 컨텍됨으로써, 복수의 엘이디 칩(L)들을 신속하게 검사할 수 있다. 또한, 엘이디 칩(L)과 프로브핀(11)의 파손을 방지함과 동시에, 광측정유닛(21)과 전류측정유닛(23)에서 엘이디 칩(L)의 광특성과 전류특성을 정확하게 측정할 수 있다. As a result, the LED chips L on the wafer W are stably contacted to the probe pin 11 regardless of the height deviation, thereby quickly inspecting the plurality of LED chips L. FIG. In addition, while preventing damage to the LED chip (L) and the probe pin (11), the optical and current characteristics of the LED chip (L) in the optical measuring unit 21 and the current measuring unit 23 can be accurately measured. Can be.
엘이디 칩 검사장치의 프로브카드의 프로브핀과 엘이디 칩들의 컨텍 거리를 항상 일정하게 유지할 수 있다. 이에 의해, 엘이디 칩과 프로브핀의 파손이 방지되고, 엘이디 칩들의 특성이 정확하게 측정된다. The contact distance between the probe pin and the LED chips of the probe card of the LED chip inspection apparatus can be kept constant at all times. As a result, breakage of the LED chip and the probe pin is prevented, and the characteristics of the LED chips are accurately measured.
Claims (11)
- 측정 대상인 적어도 하나의 엘이디 칩과 전기적으로 컨텍하는 적어도 한 쌍의 프로브핀을 구비한 프로브카드, A probe card having at least one pair of probe pins in electrical contact with at least one LED chip to be measured;상기 엘이디 칩들을 포함하는 웨이퍼를 적재하여 상기 프로브핀 컨텍위치로 이동시키는 웨이퍼스테이지, A wafer stage for loading a wafer including the LED chips to move to the probe pin contact position;상기 웨이퍼스테이지를 구동시키는 스테이지구동기,A stage driver for driving the wafer stage,상기 프로브핀에 컨텍된 엘이디 칩의 광특성과 전류특성을 측정하는 측정수단,Measuring means for measuring an optical characteristic and a current characteristic of the LED chip contacted to the probe pin;상기 웨이퍼 상에 적재된 엘이디 칩들의 좌표를 감지하는 감지수단,Sensing means for sensing coordinates of the LED chips loaded on the wafer;상기 엘이디 칩들 중 상기 컨텍 위치로 이동된 엘이디 칩을 상기 프로브핀에 컨텍시키는 적어도 하나의 칩컨텍유닛,At least one chip contact unit for contacting the probe pin with the LED chip moved to the contact position among the LED chips;상기 감지수단에서 감지된 좌표에 따라 스테이지구동기의 구동을 제어하여 상기 측정 대상 엘이디 칩을 상기 컨텍 위치로 이동시키고, 상기 칩컨텍유닛의 구동을 제어하여 상기 컨텍 위치의 엘이디 칩을 상기 프로프핀에 컨텍시키는 제어부를 포함하는 것을 특징으로 하는 엘이디 칩 검사장치. Control the driving of the stage driver according to the coordinates sensed by the sensing means to move the measurement target LED chip to the contact position, and control the driving of the chip contact unit to contact the LED chip of the contact position to the prop pin LED chip inspection device comprising a control unit to make.
- 제1항에 있어서, The method of claim 1,감지수단은 The sensing means웨이퍼상의 엘이디 칩들 각각의 좌표를 감지하여 제어부로 전달하는 좌표감지기를 갖는 것을 특징으로 하는 엘이디 칩 검사장치. LED chip inspection apparatus having a coordinate sensor for detecting the coordinates of each of the LED chip on the wafer and transfers to the controller.
- 제2항에 있어서, The method of claim 2,감지수단은 The sensing means좌표감지기에서 감지된 각 좌표 상의 엘이디 칩들 각각의 높이값을 감지하여 제어부로 전달하는 레벨감지기를 포함하는 것을 특징으로 하는 엘이디 칩 검사장치.LED chip inspection device comprising a level sensor for detecting the height value of each of the LED chips on the coordinates detected by the coordinate sensor to pass to the control unit.
- 제3항에 있어서, The method of claim 3,제어부는 The controller감지수단에서 전달되는 각 엘이디 칩의 좌표값에 기초하여 측정 대상의 엘이디 칩이 컨텍 위치로 이동하도록 스테이지구동기의 구동을 제어하며,Controlling the driving of the stage driver so that the LED chip of the measurement target moves to the contact position based on the coordinate value of each LED chip transmitted from the sensing means,감지수단에서 전달된 각 좌표의 엘이디 칩 높이값과, 미리 저장된 프로브핀과 엘이디 칩의 컨텍거리 기준값에 기초하여 칩컨텍유닛의 상승 구동을 제어하는 것을 특징으로 하는 엘이디 칩 검사장치. LED chip inspection apparatus for controlling the driving of the chip contact unit on the basis of the LED chip height value of each coordinate transmitted from the sensing means, and the contact distance reference value of the pre-stored probe pin and the LED chip.
- 제4항에 있어서, The method of claim 4, wherein프로브핀과 엘이디 칩의 컨텍거리 기준 값은 제어부에 미리 입력되어 있는 정상적인 높이값을 갖는 엘이디 칩과 프로브핀 간의 거리값인 것을 특징으로 하는 엘이디 칩 검사장치. The contact distance reference value of the probe pin and the LED chip is the LED chip inspection apparatus, characterized in that the distance value between the LED chip and the probe pin having a normal height value previously input to the control unit.
- 제5항에 있어서, The method of claim 5,제어부는 측정대상인 엘이디 칩의 높이값과 미리 입력되어 있는 정상적인 엘이디 칩의 높이값을 비교하여 칩컨텍유닛의 구동 높이를 제어하는 것을 특징으로 하는 엘이디 칩 검사장치. The controller compares the height value of the LED chip to be measured with the height value of the normal LED chip inputted in advance to control the driving height of the chip contact unit.
- 제1항 내지 제6항 중 어느 한 항에 있어서, The method according to any one of claims 1 to 6,칩컨텍유닛은Chip Contact Unit컨텍 위치로 이동된 엘이디 칩에 대응하는 웨이퍼 하부 영역에 접촉 및 이격되도록 승강하여 상기 엘이디 칩을 프로브핀에 접근 및 이격 시키는 칩컨텍핀과,A chip contact pin for elevating and contacting the LED chip so as to be in contact with and spaced apart from the lower region of the wafer corresponding to the LED chip moved to the contact position;상기 칩컨텍핀을 승강시키는 컨텍구동기를 갖는 것을 특징으로 하는 엘이디 칩 검사장치. LED chip inspection device characterized in that it has a contact driver for elevating the chip contact pin.
- 제7항에 있어서, The method of claim 7, wherein칩컨텍유닛은 Chip Contact Unit컨텍 위치로 이동된 엘이디 칩에 대응하는 웨이퍼 하부 영역에 접촉 및 이격되며, 내측에 칩컨텍핀을 승강 가능하게 수용하는 핀승강구가 형성되어 있고, 상부면으로부터 상기 핀승강구를 향해 상기 칩컨텍핀의 상단부가 출입하는 핀홀이 형성되어 있는 흡착가이드를 포함하는 것을 특징으로 하는 엘이디 칩 검사장치.A pin lifting hole is formed in contact with and spaced apart from a wafer lower region corresponding to the LED chip moved to the contact position, and has a pin lifting hole therein to receive the chip contact pin. LED chip inspection device comprising a suction guide is formed with a pinhole to the upper end.
- 제8항에 있어서, The method of claim 8,칩컨텍핀 상단면은 상기 엘이디 칩의 면적에 대응하는 것을 특징으로 하는 엘이디 칩 검사장치. An LED chip inspection device, characterized in that the upper surface of the chip contact pin corresponds to the area of the LED chip.
- 제8항에 있어서, The method of claim 8,흡착가이드는 핀승강구가 외부의 진공흡입수단과 진공라인으로 연결되며, 핀홀을 통해 컨텍 위치의 엘이디 칩 하부영역을 흡착하는 것을 특징으로 하는 엘이디 칩 검사장치.The suction guide is an LED chip inspection device, characterized in that the pin lifting hole is connected to the vacuum suction means and the vacuum line of the outside, and adsorbs the LED chip lower region of the contact position through the pin hole.
- 제7항에 있어서,The method of claim 7, wherein측정 대상인 엘이디 칩은 복수로 선택되고, 프로브핀은 상기 측정 대상인 엘이디 칩들에 대응하는 복수 쌍으로 마련되며, 칩컨텍유닛은 상기 측정 대상인 엘이디 칩들에 대응하는 복수로 마련되는 것을 특징으로 하는 엘이디 칩 검사장치.The LED chip to be measured is selected in plural, the probe pins are provided in plural pairs corresponding to the LED chips to be measured, and the chip contact unit is provided in plural corresponding to the LED chips to be measured. Device.
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KR1020110045927A KR101083346B1 (en) | 2010-12-09 | 2011-05-16 | Inspection device of led chip |
KR10-2011-0045927 | 2011-05-16 |
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