WO2012073926A1 - 光電変換モジュール - Google Patents
光電変換モジュール Download PDFInfo
- Publication number
- WO2012073926A1 WO2012073926A1 PCT/JP2011/077470 JP2011077470W WO2012073926A1 WO 2012073926 A1 WO2012073926 A1 WO 2012073926A1 JP 2011077470 W JP2011077470 W JP 2011077470W WO 2012073926 A1 WO2012073926 A1 WO 2012073926A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoelectric conversion
- light
- receiving surface
- moisture
- conversion module
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a photoelectric conversion module.
- electricity obtained from the photoelectric conversion part of the photoelectric conversion panel provided in the photoelectric conversion module is taken out by a wiring conductor such as a lead wire.
- the wiring conductor is introduced into the terminal box disposed on the non-light-receiving surface of the photoelectric conversion panel.
- electricity generated by the photoelectric conversion module is connected to an external circuit or the like via a terminal box.
- the through hole for drawing out the wiring conductor to the member on the non-light-receiving surface side of the photoelectric conversion panel A hole or the like is formed to provide an opening.
- the photoelectric conversion module When the photoelectric conversion module is installed outdoors for a long period of, for example, 10 years or longer, members such as the photoelectric conversion unit in the photoelectric conversion panel are deteriorated due to moisture that has entered from the opening. Thereby, the output of the photoelectric conversion module may be reduced.
- One object of the present invention is to provide a highly reliable photoelectric conversion module that reduces moisture permeation into the photoelectric conversion panel.
- a photoelectric conversion module includes a photoelectric conversion panel.
- the photoelectric conversion panel is electrically connected to a light receiving surface, a non-light receiving surface corresponding to the back surface of the light receiving surface, a photoelectric conversion unit positioned between the light receiving surface and the non-light receiving surface, and the photoelectric conversion unit.
- the photoelectric conversion module has one main surface, another main surface corresponding to the back surface of the one main surface, and a through-hole penetrating between the one main surface and the other main surface, and the one main surface And a moisture-proof plate disposed on the non-light-receiving surface side so as to cover the opening.
- the moisture-proof plate is arranged so that the through hole does not overlap the opening when viewed in plan.
- the wiring conductor is disposed between the non-light-receiving surface and the one main surface with a gap from the non-light-receiving surface and the one main surface, and is led out from the through hole.
- a filler is disposed in the gap.
- the photoelectric conversion module according to one embodiment of the present invention can reduce the amount of moisture that enters from the opening toward the photoelectric conversion unit. Thereby, the reliability of the photoelectric conversion module is improved.
- FIG. 2 is a cross-sectional view at a position indicated by a one-dot chain line AA in FIG. It is sectional drawing which shows typically the terminal box vicinity of the photoelectric conversion module which concerns on one Embodiment. It is sectional drawing which shows typically the terminal box vicinity of the photoelectric conversion module which concerns on other embodiment.
- FIG. 12 is an enlarged cross-sectional view schematically showing the vicinity of the terminal box in FIG. 11.
- the photoelectric conversion module M1 includes a photoelectric conversion panel PA and a terminal box B1 disposed on the non-light-receiving surface of the photoelectric conversion panel.
- the photoelectric conversion panel PA includes a photoelectric conversion unit 1, a first substrate 2, a second substrate 9, a wiring conductor 11, a first sealing material 12, and a second sealing material 13. ing.
- the second substrate 9 is omitted in order to facilitate explanation of the internal structure of the photoelectric conversion panel PA.
- the photoelectric conversion unit 1 is disposed on one main surface of the first substrate 2 and has a function of absorbing light incident from the outside and converting the light into electricity.
- the photoelectric conversion unit 1 includes a back electrode 3, a semiconductor layer 4, a buffer layer 5, a translucent conductive layer 6, and a collecting electrode 7 in order on one main surface of the first substrate 2. It is made up of layers.
- the first substrate 2 has a function of supporting the photoelectric conversion unit 1.
- the material of the first substrate 2 include a heat-resistant plastic such as blue plate glass (soda lime glass) and polyimide resin having a thickness of about 1 to 3 mm, or a thickness of 100 to 100 coated with an insulating film such as an oxide film.
- the metal foil include stainless steel and titanium having a thickness of about 200 ⁇ m.
- substrate 2 has comprised flat form, such as rectangular shape and circular shape.
- the back electrode 3 has a function of conducting charges generated due to light absorption of the semiconductor layer 4 described later.
- Examples of the material of the back electrode 3 include metals such as molybdenum, titanium, and tantalum, or a structure in which these metals are laminated.
- the thickness of the back electrode 3 may be about 0.3 to 2 ⁇ m.
- the semiconductor layer 4 has a function as a light absorption layer and has a conductivity type of a p-type semiconductor.
- Examples of the material of the semiconductor layer 4 include copper indium diselenide (CuInSe 2 ), copper indium diselenide / gallium (CuInGaSe 2 ), selenium / sulfur copper indium / gallium (CuInGaSeS), and copper indium disulfide. • Chalcopyrite compounds such as gallium (CuInGaS 2 ) or thin-film selenium, copper indium sulphide, copper indium selenide having a gallium (CuInGaSeS) layer as a surface layer, and CuInGaSe 2 .
- the thickness of the semiconductor layer 4 may be about 1 to 3 ⁇ m.
- the buffer layer 5 is disposed on the semiconductor layer 4 and has a conductivity type different from that of the semiconductor layer 4. That is, if the semiconductor layer 4 is p-type, the buffer layer 5 has n-type. Therefore, a pn junction is formed at the interface between the semiconductor layer 4 and the buffer layer 5.
- the buffer layer 5 include CdS, ZnS, ZnO, In 2 Se 3 , In (OH, S), (Zn, In) (Se, OH), and (Zn, Mg) O. It is formed by a bus deposition (CBD) method or the like.
- In (OH, S) refers to a compound mainly composed of In, OH and S.
- (Zn, In) (Se, OH) refers to a compound mainly composed of Zn (zinc), In, Se and OH.
- (Zn, Mg) O refers to a compound mainly composed of Zn, Mg (magnesium) and O (oxygen).
- the buffer layer 5 may include indium. Thereby, the change in conductivity caused by the mutual diffusion of elements between the buffer layer 5 and the translucent conductive layer 6 can be reduced. Further, if the semiconductor layer 4 is also a chalcopyrite-based material containing indium, the change in conductivity and carrier concentration due to mutual diffusion of elements between the semiconductor layer 4, the buffer layer 5 and the translucent conductive layer 6 is reduced. it can.
- the buffer layer 5 may contain a III-VI group compound as a main component.
- the III-VI group compound is a compound of a III-B group element and a VI-B group element.
- the phrase “containing the III-VI group compound as a main component” means that among the compounds contained in the buffer layer 5, the III-VI group compound is 50 mol% or more. At this time, the group III-VI compound may be 80 mol% or more.
- Zn element should just be 50 atomic% or less among the metal elements which comprise the buffer layer 5.
- FIG. Thereby, the moisture resistance of photoelectric conversion panel PA improves. At this time, the Zn element may be 20 atomic% or less.
- the thickness of the buffer layer 5 may be 10 to 200 nm. This reduces excessive increases in series resistance.
- the buffer layer 5 only needs to be light transmissive with respect to the wavelength region of light absorbed by the semiconductor layer 4. Thereby, the absorption efficiency of the semiconductor layer 4 can be improved.
- the resistivity of the buffer layer 5 should just be 1 ohm * cm or more. Thereby, leakage current is reduced.
- the translucent conductive layer 6 is provided on the buffer layer 5 and has a function of conducting charges generated at the pn junction due to light absorption of the semiconductor layer 4.
- Examples of the material of the translucent conductive layer 6 include zinc oxide (ZnO), aluminum, indium oxide (ITO) containing tin, tin oxide (SnO 2 ) or boron, gallium, indium, and fluorine. Examples include compounds with zinc oxide. In particular, indium tin oxide containing zinc oxide and tin is superior in light transmittance and resistance value compared to other materials.
- the thickness of the translucent conductive layer 6 is about 0.05 to 2 ⁇ m.
- the current collecting electrode 7 is provided on the translucent conductive layer 6 and has a function of collecting charges from the translucent conductive layer 6. If the current collecting electrode 7 is formed of a material having a resistance lower than that of the translucent conductive layer 6, it is possible to collect charges efficiently.
- the current collecting electrode 7 may be made of a metal material such as silver or copper. Moreover, such a collector electrode 7 can be formed by screen printing etc., for example.
- the photoelectric conversion unit 1 separation grooves P1 to P3 are provided in each layer formed on one first substrate 2. Thereby, the some photoelectric conversion unit formed in the photoelectric conversion part 1 can be set as the aspect electrically connected in series using a part of current collection electrode 7. FIG. In such an embodiment, the output voltage is improved by integrating the photoelectric conversion units. Furthermore, as shown in FIG. 3, output take-out portions 8 are respectively provided at both ends of the photoelectric conversion portion 1. For example, one output extraction unit 8 corresponds to the back electrode 3 positioned on one end side of the photoelectric conversion unit 1. The other output extraction portion 8 corresponds to a portion located in at least one of the translucent conductive layer 6 and the current collecting electrode 7 located on the other end side of the photoelectric conversion portion 1.
- one output extraction portion 8 becomes a positive electrode, and the other output extraction portion 8 becomes a negative electrode.
- a wiring conductor 11 is electrically connected to the pair of output extraction portions 8. That is, the photoelectric conversion unit 1 is electrically connected to the wiring conductor.
- the output extraction portion 8 is provided on the back electrode 3, the region itself where the semiconductor layer 4, the buffer layer 5, etc. are not formed may be used as the output extraction portion 8. Thereby, the process of newly forming the output extraction part 8 can be reduced.
- the output extraction part 8 is provided in the translucent conductive layer 6, it is good also considering the translucent conductive layer 6 itself or the collector electrode 7 itself as the output extraction part 8.
- the output extraction unit 8 forms a stacked unit composed of the semiconductor layer 4, the buffer layer 5, and the translucent conductive layer 6 on the first substrate 2, and then removes a part of the stacked unit,
- the current collecting electrode 7 may be formed so as to extend to a part thereof.
- a metal such as molybdenum is formed by sputtering on the substantially entire surface excluding about 3 to 10 mm from the outer periphery of the first substrate 2 such as washed blue plate glass to form the back electrode 3.
- a desired position of the back electrode 3 is irradiated with a YAG laser or the like to form the dividing groove P1, and the back electrode 3 is patterned.
- the semiconductor layer 4 is formed on the patterned back electrode 3 by using a sputtering method, a vapor deposition method, a printing method, or the like.
- the buffer layer 5 is formed on the semiconductor layer 4 by the CBD method or the like.
- the light-transmitting conductive layer 6 is formed on the buffer layer 5 by sputtering or metal organic chemical vapor deposition (MOCVD).
- MOCVD metal organic chemical vapor deposition
- the dividing groove P2 and the dividing groove P3 are formed by mechanical scribing or the like, and the semiconductor layer 4, the buffer layer 5, and the light-transmitting conductive layer 6 are patterned.
- a metal paste is applied on the translucent conductive layer 6 by screen printing or the like, and then fired to form the current collecting electrode 7.
- the second substrate 9 has a function of protecting the photoelectric conversion unit 1 from the external environment. Further, in the photoelectric conversion panel PA, as shown in FIG. 4, since light is mainly incident from the second substrate 9 side, the second substrate 9 has a light receiving surface 9a. On the other hand, in the photoelectric conversion panel PA, the other main surface corresponding to the back surface of the one main surface of the first substrate 2 is the non-light receiving surface 2a.
- the non-light-receiving surface refers to a surface on which light that mainly contributes to photoelectric conversion does not enter, and does not mean that no light is incident.
- substrate 9 can utilize the thing equivalent to the 1st board
- the wiring conductor 11 has a function of deriving the electricity obtained from the output extraction unit 8 to the outside.
- Examples of such a wiring conductor 11 include a metal foil such as copper (Cu) having a thickness of about 0.1 to 0.5 mm and a width of about 1 to 7 mm. Also.
- the surface of the metal foil may be coated with tin, nickel or solder. Thereby, the electrical connection with the output extraction part 8 becomes favorable.
- the first substrate 2 is provided with an opening 14 that opens toward the non-light-receiving surface 2a.
- the opening 14 is a hole formed from one main surface of the first substrate 2 toward the other main surface (non-light receiving surface 2a).
- the wiring conductor 11 is led out through the opening 14.
- the opening 14 may be provided in advance before the photoelectric conversion unit 1 is formed, or may be provided after the photoelectric conversion unit 1 is formed.
- the opening 14 can be formed by a machining method using a drill or a laser processing method such as a YAG (yttrium, aluminum, garnet) laser.
- the first sealing material 12 has a function of protecting the photoelectric conversion unit 1 while bonding the first substrate 2 and the second substrate 9, and is arranged so as to cover the photoelectric conversion unit 1. Moreover, the 1st sealing material 12 has translucency.
- the material of the first sealing material 12 include a resin whose main component is a copolymerized ethylene-vinyl acetate copolymer (hereinafter abbreviated as EVA).
- EVA may contain a cross-linking agent such as triallyl isocyanurate in order to promote cross-linking of the resin.
- the second sealing material 13 is disposed on the outer peripheral portions of the first substrate 2 and the second substrate 9.
- the second sealing material 13 is disposed between the first substrate 2 and the second substrate 9, but is disposed so as to cover the outer peripheral side surfaces of the first substrate 2 and the second substrate 9. It may be.
- the second sealing material 13 has a function of reducing intrusion of moisture or the like into the photoelectric conversion unit 1.
- Such a 2nd sealing material 13 may be comprised with resin containing a desiccant. Examples of such a resin include butyl rubber, urethane, and polyurethane.
- the desiccant has a function of physically or chemically adsorbing or absorbing moisture that has entered. Examples of such desiccants include anhydrous compounds, molecular sieves such as clay, zeolite, and porous glass, silica gel, calcium chloride, magnesium sulfide, calcium oxide, and magnesium oxide.
- the photoelectric conversion unit 1 is formed on the first substrate 2.
- the wiring conductor 11 is attached to the output extraction unit 8 of the photoelectric conversion unit 1. What is necessary is just to set the member which connects the wiring conductor 11 and the output extraction part 8 suitably according to the material of the wiring conductor 11 and the output extraction part 8.
- FIG. 8 For example, if a part of the back electrode 3 containing molybdenum is used as the output extraction portion 8, it can be connected by solder containing indium.
- the output extraction portion 8 if a part of the transparent conductive layer 6 containing ITO is used as the output extraction portion 8, it can be connected with a conductive adhesive obtained by kneading a filler such as silver in an epoxy resin or the like. Moreover, if the output extraction part 8 is formed with silver or copper, it can connect with the solder previously provided in the wiring conductor 11. FIG.
- the wiring conductor 11 disposed on the outer periphery of the photoelectric conversion unit 1 is appropriately bent in the direction of the opening 14 and led out to the non-light-receiving surface 2 a side through the opening 14.
- a second sealing material 13 having a width T is applied on the first substrate 2 around the photoelectric conversion unit 1.
- the sheet-like first sealing material 12 having a thickness of about 0.1 to 0.6 mm and the second substrate 9 are arranged and stacked on the photoelectric conversion unit 1 in this order.
- these laminates are set in a laminating apparatus, held under a reduced pressure, for example, at about 100 to 200 ° C.
- the 2nd sealing material 13 may be apply
- what was previously formed in tape shape may be installed on the 1st board
- the terminal box B1 is attached to the non-light-receiving surface 2a of the photoelectric conversion panel PA as shown in FIG.
- the terminal box B1 includes a moisture barrier plate 15, a frame body 16, and a lid body 17.
- the moisture-proof plate 15 is arranged so that one main surface faces the non-light-receiving surface 2a. Moreover, in the moisture-proof board 15 which concerns on this embodiment, the base 18 and the terminal 19 grade
- the moisture-proof plate 15 is made of a material that hardly transmits moisture. That is, the moisture-proof plate 15 is not a member that does not transmit moisture at all. Moreover, the moisture-proof board 15 is good to have insulation. Thereby, generation
- the moisture-proof board 15 is crimped
- a glass-based material that hardly permeates moisture and has relatively high strength and insulating properties is preferable.
- a resin having low moisture permeability such as polyethylene can be used. When using such resin, you may utilize what interposed the metal layer between the said resin layers. Thereby, the permeation
- the moisture-proof plate 15 may be a metal plate coated with resin or glass.
- the moisture-proof plate 15 is provided with a through-hole 15a that penetrates from one main surface of the moisture-proof plate 15 to the other main surface of the moisture-proof plate 15.
- the through hole 15 a is used to guide the wiring conductor 11 to the terminal 19 provided on the other main surface of the moisture-proof plate 15. That is, the wiring conductor 11 is led out to the terminal 19 side through the through hole 15a.
- the moisture-proof board 15 is arrange
- moisture content to the opening part 14 should be made small. Can do.
- moisture easily enters from the joint C between the frame body 16 and the photoelectric conversion panel PA located around the moisture-proof plate 15.
- the distance S1 from the junction C to the opening 14 can be increased, moisture intrusion can be further reduced.
- the moisture barrier plate 15 is disposed so that the through hole 15a does not overlap the opening 14 when the moisture barrier plate 15 is viewed in plan. Thereby, when the moisture-proof plate 15 is viewed in plan, a distance S2 is generated between the through hole 15a and the opening 14. With such a distance S2, moisture entering from the through hole 15a side hardly reaches the opening 14.
- the moisture that enters from the through hole 15 a side is mainly moisture that enters from the joint between the frame body 16 and the lid body 17.
- the wiring conductor 11 is disposed between the non-light-receiving surface 2 a of the photoelectric conversion panel PA and one main surface of the moisture-proof plate 15. At this time, the wiring conductor 11 is disposed with a gap K between the non-light-receiving surface 2 a and the moisture-proof plate 15, and the filler 20 is disposed in the gap K.
- the filler 20 is made of a material that allows the moisture-proof plate 15 to adhere to the non-light-receiving surface 2a of the photoelectric conversion panel PA.
- examples of such materials include polyolefin resins such as butyl rubber (polyisobutene-isoprene), polyethylene, polypropylene, polybutene, and polyisobutylene.
- the said material is excellent in moisture resistance and insulation.
- the filler 20 may contain a filler for adjusting the viscosity and color.
- a filler for adjusting the viscosity and color. Examples of such a filler include chalk, silica, carbon black, calcium carbonate, titanium dioxide, talc, kaolin, and mica.
- the filler 20 may contain an antioxidant for reducing deterioration due to oxidation. Examples of such antioxidants include hindered phenols, hindered amines, and thioethers.
- the filler 20 may contain a desiccant.
- the desiccant the same desiccant contained in the second sealing material 13 can be used.
- the material equivalent to the above-mentioned 2nd sealing material 14 can also be used for the material of the filler 20.
- the filler 20 is arrange
- the wiring conductor 11 is formed with a convex portion 11a.
- at least other than the tip of the convex portion 11a is in contact with the filler 20.
- more filler 20 is disposed between the moisture-proof plate 15 or the non-light-receiving surface 2 a and the wiring conductor 11.
- the wiring conductor 11 having such a protrusion 11a can be formed, for example, by embossing by pressing a mold having an uneven shape.
- the shape of the convex portion 11a may be a long shape substantially parallel to the width direction of the wiring conductor 11, or an island shape formed at random, and the height thereof is about 0.1 to 3 mm.
- the wiring conductor 11 which has such a convex part 11a includes the form where the wiring conductor 11 itself is bent and forms a wave shape.
- the frame body 16 is disposed on the outer periphery of the moisture-proof plate 15 so as to surround the wiring conductor 11. Further, the lid body 17 is disposed on the upper surface of the frame body 16. Examples of the material of the frame body 16 and the lid body 17 include resins such as modified PPE (polyphenylene ether) or modified PPO (polyphenylene oxide). These resins are excellent in durability and insulation against a long-term outdoor environment.
- the pedestal 18 is disposed on the other main surface of the moisture-proof plate 15 in the vicinity of the center in the terminal box B1.
- the pedestal 18 supports a terminal 19 to which the wiring conductor 11 is electrically connected.
- Examples of the material of the pedestal 18 include resins such as modified PPE and modified PPO as in the case of the frame body 16 and the lid body 17 described above.
- the terminal 19 has a function of guiding electricity from the wiring conductor 11 to the cable 21.
- the terminal 19 is made of, for example, strip-shaped copper having a thickness of about 0.5 to 2 mm, and is fixed to the moisture-proof plate 15 with screws 22a.
- the cable 21 has a function of guiding electricity generated by the photoelectric conversion module M1 to an external load.
- One end of the cable 21 is fixed to the terminal 19 with a screw 22b, and the other end is electrically connected to the load circuit or the like.
- a stranded wire core having a cross-sectional area of about 3.5 mm 2 composed of about 5 to 20 thin copper wires can be used which is covered with polyethylene, vinyl chloride or the like.
- the wiring conductor 11 led out from the opening 14 is bent in a predetermined direction along the non-light-receiving surface 2a of the photoelectric conversion panel PA.
- the filler 20 is applied between the non-light-receiving surface 2a and one main surface of the moisture-proof plate 15, and the moisture-proof plate 15 is fixed to the photoelectric conversion panel PA.
- the filler 20 is applied so as to be disposed in the gaps K between the wiring conductor 11 and the non-light-receiving surface 2 a and between the wiring conductor 11 and one main surface of the moisture-proof plate 15.
- the end of the wiring conductor 11 is pulled out to the other main surface of the moisture-proof plate 15 through the through hole 15a, and the end of the wiring conductor 11 led out from the through hole 15a is fixed to the terminal 19 with solder or the like.
- the moisture-proof plate 15 and the frame 16 may be previously fixed with an adhesive or the like, or the moisture-proof plate 15 may be fixed and then the frame 16 may be separately fixed to the moisture-proof plate 15. Good.
- the cable 21 is inserted into the inside of the terminal box B1 from the introduction port on the side surface of the frame 16, and the conducting wire portion at the end of the cable 21 to which a crimp terminal or the like is attached is fixed to the terminal 19 with screws 22b.
- a packing 23 for reducing moisture intrusion may be provided at the inlet of the frame body 16.
- the lid body 17 is attached and fixed with screws or the like.
- a potting material such as silicone resin or epoxy resin may be filled in the terminal box B1 before the lid 17 is attached.
- the opening 14 is more moisture-proof than the through-hole 15a. It may be located on the center side of the plate 15. Thereby, for example, as shown in FIG. 6, the moisture from the joint portion C is smaller than that in the form in which the opening portion 14 is located outside the moisture-proof plate 15 with respect to the through hole 15 a (terminal box B ⁇ b> 1 a). It becomes difficult to enter the opening 14. Further, in the form shown in FIG.
- the wiring conductor 11 shown in FIG. 5 protrudes toward the non-light-receiving surface 2a of the photoelectric conversion panel PA and the other main surface of the moisture-proof plate 15, and is provided with a convex portion 11a that contacts the filler 20. It is not restricted to this form. In other words, when these members are pressed in the gap K between the photoelectric conversion panel PA and the wiring conductor 11 and the gap K between the moisture-proof plate 15 and the wiring conductor 11, the filler 20 enters the gap. That's fine.
- the convex portion 2 b of the non-light-receiving surface 2 a of the photoelectric conversion panel PA and the convex portion 11 a of the wiring conductor 11 are respectively projected toward one main surface of the moisture-proof plate 15. There is something like that.
- the convex part 15b of one main surface of the moisture-proof board 15 and the convex part 11a of the wiring conductor 11 each protrude toward the non-light-receiving surface 2a of a photoelectric conversion panel. There is something like that.
- the convex part 15b of one main surface of the moisture-proof board 15 and the convex part 2b of the non-light-receiving surface 2a of the photoelectric conversion panel PA protrude toward the wiring conductor 11, respectively. There is something to be provided.
- the convex part which contacts the above fillers 20 as shown in FIG. 10 is formed in each of the photoelectric conversion panel PA, the wiring conductor 11, and the moisture-proof board 15, as shown in FIG.
- the contact area with the conversion panel PA, the wiring conductor 11, and the moisture barrier plate 15) can be increased.
- the moisture-proof plate 15 and the photoelectric conversion panel PA as described above may be formed by previously embossing the moisture-proof plate 15 and the first substrate 2 and forming convex portions.
- the convex part provided in each member of photoelectric conversion panel PA, the wiring conductor 11, and the moisture-proof board 15 is provided in the substantially whole surface by the side of the filler 20 of each member, a contact area with the filler 20 will be enlarged more. can do.
- the photoelectric conversion module M2 includes a photoelectric conversion panel PB and a terminal box B2.
- the photoelectric conversion panel PB includes a translucent substrate 31, a plurality of photoelectric conversion units 32, and a connection conductor 33 that electrically connects adjacent photoelectric conversion units 32.
- the photoelectric conversion panel PB includes a light receiving surface side sealing material 34 and a non-light receiving surface side sealing material 35 that seal the photoelectric conversion portion 32 and the connection conductor 33, a back sheet 36, and a wiring conductor 37.
- the terminal box B2 is attached to the back sheet 36 corresponding to the non-light receiving surface of the photoelectric conversion module M2.
- the translucent substrate 31 a substrate made of glass or polycarbonate resin is used.
- white plate glass, tempered glass, double tempered glass or heat ray reflective glass is used.
- the thickness of the translucent substrate 31 may be about 3 to 5 mm.
- the thickness of the translucent substrate 31 may be about 5 mm.
- the photoelectric conversion unit 32 has a flat plate shape, such as single crystal silicon or polycrystalline silicon having a thickness of about 0.2 to 0.4 mm and a size of about 150 to 160 mm square. Is formed. Inside the photoelectric conversion portion 32, a PN junction (not shown) is formed in which a P layer containing a large amount of P-type impurities such as boron and an N layer containing a large amount of N-type impurities such as phosphorus are in contact. .
- the photoelectric conversion unit 32 is provided with a bus bar electrode 38 and finger electrodes 39.
- the bus bar electrode 38 and the finger electrode 39 are formed, for example, by screen printing a conductive paste containing silver or the like.
- the finger electrode 39 has a function of collecting carriers and is formed with a width of about 0.1 to 0.2 mm. Further, a large number of finger electrodes 39 are formed at intervals of about 2 to 4 mm in parallel with one side of the photoelectric conversion portion 32.
- the bus bar electrodes 38 have a function of collecting carriers collected by the finger electrodes 39 and are formed in a number of 2 to 3 so as to intersect the finger electrodes 39 perpendicularly.
- the bus bar electrode 38 is electrically connected to the connection conductor 33, and thus has a width of about 1 to 3 mm. Note that the surface of the bus bar electrode 38 may be coated with solder over almost the entire surface in order to protect the bus bar electrode 38 and make the connection conductor 33 easy to attach.
- the bus bar electrode 38 is similarly formed on the non-light-receiving surface side of the photoelectric conversion unit 32.
- connection conductor 33 has a function of electrically connecting the bus bar electrodes 38 of the adjacent photoelectric conversion units 32 and connecting a plurality of photoelectric conversion units 32 in series. Specifically, the connection conductor 33 electrically connects the bus bar electrode 38 formed on the light receiving surface of one photoelectric conversion unit 32 and the bus bar electrode 38 formed on the non-light receiving surface of the other photoelectric conversion unit 32. To do.
- the connection conductor 33 is obtained by coating a metal foil such as copper or aluminum with a solder having a thickness of about 20 to 70 ⁇ m.
- connection conductor 33 is the same as the width of the bus bar electrode 38 of the photoelectric conversion unit 32 or the width of the bus bar electrode 38 so that the connection conductor 33 itself does not shadow the light receiving surface of the photoelectric conversion unit 32 during soldering. Smaller than that.
- the connection conductor 33 should just have the length which can connect the bus-bar electrodes 38 of the adjacent photoelectric conversion part 32 mutually. At this time, the connection conductor 33 may be connected so as to overlap almost all the bus bar electrodes 38 of the photoelectric conversion unit 32. Thereby, the resistance of the photoelectric conversion unit 32 is reduced.
- the connection conductor 33 has a width of about 1 to 3 mm and a length of about 250 to 300 mm.
- the light-receiving surface side sealing material 34 and the non-light-receiving surface side sealing material 35 are made of EVA or polyvinyl butyral (PVB), and are formed into a sheet shape having a thickness of about 0.4 to 1 mm by a T die and an extruder. Is used. These are softened and fused to be integrated with other members by applying heat and pressure under reduced pressure by a laminating apparatus.
- the non-light-receiving surface side sealing material 35 may not be transparent, and may be colored white or the like by containing titanium oxide or a pigment according to the surrounding installation environment where the photoelectric conversion module is installed.
- the back sheet 36 protects the photoelectric conversion unit 32 and the like from the outside and reduces intrusion of moisture and the like from the outside.
- a back sheet 36 for example, a weather-resistant fluorine-based resin sheet sandwiching an aluminum foil, a polyethylene terephthalate (PET) sheet vapor-deposited with alumina or silica, or the like is used.
- PET polyethylene terephthalate
- the back sheet 36 is provided with an opening 36a.
- the wiring conductor 37 is electrically connected to the photoelectric conversion unit 32 in the photoelectric conversion panel PB, and is led out from the opening 36a of the back sheet 36 to the terminal box B2 as shown in FIGS. .
- this wiring conductor 37 the thing equivalent to the wiring conductor 11 of the photoelectric conversion module M1 mentioned above can be used.
- the terminal box B2 provided in the photoelectric conversion module M2 has the same configuration as the terminal box B1 provided in the photoelectric conversion module M1.
- the photoelectric conversion units 32 are connected in series with connection conductors 33 and arranged in a matrix.
- the wiring conductor 37 is connected to the photoelectric conversion units 32 at both ends of the photoelectric conversion units 32 connected in series.
- the translucent substrate 31, the light receiving surface side sealing material 34, the plurality of photoelectric conversion parts 32 connected by the connection conductor 33, the non-light receiving surface side sealing material 35, and the back surface sheet 36 are sequentially stacked to form a laminate.
- one end of the wiring conductor 37 is drawn out to the back surface side of the back sheet 36 from the through-hole formed in the non-light-receiving surface side sealing material 35 in advance and the opening 36 a of the back sheet 36.
- the laminate is placed in a laminator and heated and integrated while being pressurized under reduced pressure.
- the light-receiving surface side sealing material 34 and the non-light-receiving surface side sealing material 35 are softened and maintained at a temperature for crosslinking (for example, about 120 to 160 ° C.) for about 15 to 60 minutes.
- the body is integrated.
- the terminal box B2 is attached to the upper surface of the back sheet 36 (non-light receiving surface of the photoelectric conversion panel PB) in the same manner as the photoelectric conversion module M1.
- a frame portion 40 may be attached around the photoelectric conversion panel PB as shown in FIG. 14 in order to reduce damage to the photoelectric conversion panel PB.
- Such a photoelectric conversion module M2 can improve the reliability by reducing the intrusion of moisture from the outside, like the photoelectric conversion module M1.
- the photoelectric conversion module M3 shown in FIG. 9 and the above-described photoelectric conversion module M1 have different terminal box structures. Specifically, the terminal box B3 provided in the photoelectric conversion module M3 is different from the terminal box B1 in that the moisture-proof plate 15 is provided separately from the bottom surface member of the terminal box. That is, in the terminal box B1, the bottom surface member of the terminal box B1 is the moisture-proof plate 15.
- the moisture-proof plate 15 of the terminal box B3 since the moisture-proof plate 15 is separate from the bottom member of the terminal box B3, the freedom of selection of the moisture-proof plate 15 is increased. That is, the material of the moisture-proof plate 15 of the terminal box B3 is not limited to the material used for the bottom member of the terminal box B1. Therefore, in the moisture-proof plate 15 of the terminal box B3, it is easy to use glass or metal excellent in moisture resistance and durability as compared with a resin material that is easily used in the terminal box B1. Specifically, when the moisture-proof plate 15 is formed of glass, for example, soda lime glass having a thickness of about 0.3 to 1.0 mm can be used. Moreover, when forming the moisture-proof board 15 with a metal, aluminum, stainless steel, etc. can be used.
- the metal plate described above may be coated with an insulating material such as resin or glass.
- the moisture-proof board 15 comes to have insulation.
- Such a moisture-proof board 15 should just be made to fit in the bottom face member of terminal box B3, for example.
- the moisture-proof plate 15 may be bonded to the bottom member of the terminal box B3 with an epoxy adhesive or the like.
- the terminal box B3 is different from the terminal box B1 in the potting material filled in the terminal box. Specifically, the terminal box B3 is different from the terminal box B1 in that two types of potting materials (first potting material 41 and second potting material 42) are used.
- the first potting material 41 is disposed so as to cover the wiring conductor 11, the pedestal 18, the terminal 19, and the like.
- Such a first potting material 41 may be made of a material having excellent moisture resistance.
- An example of such a material is butyl rubber.
- the second potting material 42 is disposed on the first potting material 41.
- a material having excellent heat resistance may be used.
- An example of such a material is a silicone resin. Silicone resin is not easily changed in shape even at a temperature of about 50 to 100 ° C. and has excellent heat resistance.
- the terminal box B3 uses two types of potting materials, the flow of the first potting material 41 can be reduced even in a high temperature environment. Thereby, the reliability of the photoelectric conversion module M3 at a high temperature is further improved.
- a leg portion 16a may be provided on a part of the frame body 16. If such a leg portion 16a is provided, the thickness of the filler 20 located between the non-light-receiving surface 2a of the photoelectric conversion panel PA and one main surface of the moisture-proof plate 15 can be increased. Thereby, the infiltration of moisture can be further reduced.
- the height of the leg portion 16a may be about 1 to 5 mm, for example. Moreover, what is necessary is just to form this leg part 16a integrally with the frame 16 by injection molding etc., for example.
- an amorphous silicon layer may be used instead of the semiconductor layer and the buffer layer.
- microcrystalline silicon may be used instead of crystalline silicon.
- M1 to M3 photoelectric conversion modules B1 to B3, B1a: terminal box PA, PB: photoelectric conversion panel 1, 32: photoelectric conversion unit 2: first substrate 2a: non-light receiving surface 2b: convex portion 3: back electrode 4: semiconductor Layer 5: Buffer layer 6: Translucent conductive layer 7: Current collecting electrode 8: Output extraction part 9: Second substrate 11, 37: Wiring conductor 11a: Convex part 12: First sealing material 13: Second sealing Material 14: Opening 15: Moisture-proof plate 15a: Through hole 15b: Convex 16: Frame 16a: Leg 17: Lid 18: Base 19: Terminal 20: Filler 21: Cables 22a, 22b: Screw 23: Packing 31: Translucent substrate 33: Connection conductor 34: Light-receiving surface side sealing material 35: Non-light-receiving surface side sealing material 36: Back sheet 38: Bus bar electrode 39: Finger electrode 40: Frame portion 41: First potting material 42: Second potting material
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Abstract
Description
光電変換モジュールM1は、図1に示すように、光電変換パネルPAおよび該光電変換パネルの非受光面に配置された端子ボックスB1を備えている。
光電変換パネルPAは、図3および図4に示すように、光電変換部1、第1基板2、第2基板9、配線導体11、第1封止材12および第2封止材13を備えている。なお、図3では、光電変換パネルPAの内部構造の説明を容易にするために、第2基板9を省略している。
端子ボックスB1は、図5に示すように、光電変換パネルPAの非受光面2aに取り付けられる。端子ボックスB1は、防湿板15と、枠体16と、蓋体17とを備えている。
次に、結晶系光電変換モジュールの実施形態について図11乃至図14を用いて説明する。光電変換モジュールM2は、光電変換パネルPBおよび端子ボックスB2を備えている。光電変換パネルPBは、図11および図12に示すように、透光性基板31と、複数の光電変換部32と、隣り合う光電変換部32同士を電気的に接続する接続導体33とを備えている。さらに、光電変換パネルPBは、光電変換部32および接続導体33を封止する受光面側封止材34および非受光面側封止材35と、裏面シート36と、配線導体37とを備えている。なお、端子ボックスB2は、光電変換モジュールM2の非受光面に相当する裏面シート36に取り付けられる。
次に、本発明に係る光電変換モジュールの他の実施形態について図9を用いて説明する。図9に示された光電変換モジュールM3と上述した光電変換モジュールM1とでは、端子ボックスの構造が異なっている。具体的に、光電変換モジュールM3に設けられた端子ボックスB3は、端子ボックスB1と異なり、防湿板15が端子ボックスの底面部材と別体で設けられている。すなわち、端子ボックスB1では、該端子ボックスB1の底面部材を防湿板15としている。
B1~B3、B1a:端子ボックス
PA、PB:光電変換パネル
1、32:光電変換部
2:第1基板
2a:非受光面
2b:凸部
3:裏面電極
4:半導体層
5:バッファ層
6:透光性導電層
7:集電電極
8:出力取り出し部
9:第2基板
11、37:配線導体
11a:凸部
12:第1封止材
13:第2封止材
14:開口部
15:防湿板
15a:貫通孔
15b:凸部
16:枠体
16a:脚部
17:蓋体
18:台座
19:ターミナル
20:充填材
21:ケーブル
22a、22b:ネジ
23:パッキン
31:透光性基板
33:接続導体
34:受光面側封止材
35:非受光面側封止材
36:裏面シート
38:バスバー電極
39:フィンガー電極
40:枠部
41:第1ポッティング材
42:第2ポッティング材
Claims (9)
- 受光面、該受光面の裏面に相当する非受光面、前記受光面と前記非受光面との間に位置する光電変換部、該光電変換部に電気的に接続された配線導体および前記非受光面に開口した、前記配線導体が外部に導出される開口部を有する光電変換パネルと、
一主面、該一主面の裏面に相当する他主面、ならびに前記一主面および前記他主面の間を貫通する貫通孔を有し、前記一主面で前記開口部を覆うように前記非受光面側に配置された防湿板とを備え、
該防湿板は、平面視したときに前記貫通孔が前記開口部に重ならないように配置され、
前記配線導体は、前記非受光面および前記一主面の間において、前記非受光面および前記一主面と間隙を空けて配置され、かつ前記貫通孔から外部に導出されており、
前記間隙には、充填材が配置されている、光電変換モジュール。 - 平面視したときに、前記防湿板は、前記非受光面内に配置されており、
前記開口部は、前記貫通孔よりも、前記防湿版の中央部側に位置している、請求項1に記載の光電変換モジュール。 - 前記配線導体には、前記一主面および前記非受光面に向かって突出するとともに前記充填材に接触する凸部が形成されている、請求項1または請求項2に記載の光電変換モジュール。
- 前記一主面および前記配線導体には、前記非受光面に向かって突出するとともに前記充填材に接触する凸部が形成されている、請求項1または請求項2に記載の光電変換モジュール。
- 前記非受光面および前記配線導体には、前記一主面に向かって突出するとともに前記充填材に接触する凸部が形成されている、請求項1または請求項2に記載の光電変換モジュール。
- 前記一主面および前記非受光面には、前記配線導体に向かって突出するとともに前記充填材に接触する凸部が形成されている、請求項1または請求項2に記載の光電変換モジュール。
- 前記防湿板は、絶縁性を有している、請求項1乃至請求項6のいずれかに記載の光電変換モジュール。
- 前記充填材は、乾燥剤を含んでいる、請求項1乃至請求項7のいずれかに記載の光電変換モジュール。
- 前記配線導体を囲うように前記他主面上に配置された枠体をさらに備える、請求項1乃至請求項8のいずれかに記載の光電変換モジュール。
Priority Applications (2)
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US13/990,720 US20130247964A1 (en) | 2010-11-30 | 2011-11-29 | Photoelectric conversion module |
JP2012546873A JP5460882B2 (ja) | 2010-11-30 | 2011-11-29 | 光電変換モジュール |
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JP2010266588 | 2010-11-30 | ||
JP2010-266588 | 2010-11-30 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014135377A (ja) * | 2013-01-10 | 2014-07-24 | Kyocera Corp | 光電変換モジュール |
CN104779311A (zh) * | 2014-01-15 | 2015-07-15 | 聚日(苏州)科技有限公司 | 一种太阳能电池组件及其形成方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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EP2648493B1 (en) * | 2012-04-02 | 2016-11-30 | ABB Technology Oy | Electric apparatus |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102616A (ja) * | 1999-09-29 | 2001-04-13 | Sharp Corp | 太陽電池モジュール |
JP2004356349A (ja) * | 2003-05-28 | 2004-12-16 | Kyocera Corp | 太陽電池モジュールの製造方法 |
JP2006294646A (ja) * | 2005-04-05 | 2006-10-26 | Fuji Electric Holdings Co Ltd | 太陽電池用端子ボックスの取り付け方法 |
JP2009021288A (ja) * | 2007-07-10 | 2009-01-29 | Sanyo Electric Co Ltd | 太陽電池モジュール |
WO2009104627A1 (ja) * | 2008-02-21 | 2009-08-27 | 三洋電機株式会社 | 太陽電池モジュール |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3443029B2 (ja) * | 1999-03-30 | 2003-09-02 | 鐘淵化学工業株式会社 | 太陽電池モジュール及び発電装置並びに太陽電池モジュールの製造方法 |
JP4132022B2 (ja) * | 2002-03-26 | 2008-08-13 | 京セラ株式会社 | 太陽電池モジュール |
US7476800B2 (en) * | 2005-06-01 | 2009-01-13 | Outokumpu Copper Neumayer Gmbh | Electric connection element |
JP2007196395A (ja) * | 2006-01-23 | 2007-08-09 | Fujifilm Corp | インクジェット記録媒体及びその製造方法、インクジェット記録方法、インクジェット記録セット、並びにインクジェット記録物 |
US20090114261A1 (en) * | 2007-08-29 | 2009-05-07 | Robert Stancel | Edge Mountable Electrical Connection Assembly |
CN101431115B (zh) * | 2007-11-07 | 2011-05-18 | E.I.内穆尔杜邦公司 | 太阳能电池板及其制造方法 |
US20100043871A1 (en) * | 2008-04-14 | 2010-02-25 | Bp Corporation North America Inc. | Thermal Conducting Materials for Solar Panel Components |
DE102008022052A1 (de) * | 2008-05-03 | 2009-11-26 | Lumberg Connect Gmbh | Anschlussdose, insbesondere für Solarmodule |
JP5095584B2 (ja) * | 2008-11-11 | 2012-12-12 | 行田電線株式会社 | 太陽電池モジュール用端子ボックス |
US7829783B2 (en) * | 2009-05-12 | 2010-11-09 | Miasole | Isolated metallic flexible back sheet for solar module encapsulation |
WO2012021682A1 (en) * | 2010-08-13 | 2012-02-16 | First Solar, Inc. | Cord plate for photovoltaic module |
-
2011
- 2011-11-29 US US13/990,720 patent/US20130247964A1/en not_active Abandoned
- 2011-11-29 WO PCT/JP2011/077470 patent/WO2012073926A1/ja active Application Filing
- 2011-11-29 JP JP2012546873A patent/JP5460882B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102616A (ja) * | 1999-09-29 | 2001-04-13 | Sharp Corp | 太陽電池モジュール |
JP2004356349A (ja) * | 2003-05-28 | 2004-12-16 | Kyocera Corp | 太陽電池モジュールの製造方法 |
JP2006294646A (ja) * | 2005-04-05 | 2006-10-26 | Fuji Electric Holdings Co Ltd | 太陽電池用端子ボックスの取り付け方法 |
JP2009021288A (ja) * | 2007-07-10 | 2009-01-29 | Sanyo Electric Co Ltd | 太陽電池モジュール |
WO2009104627A1 (ja) * | 2008-02-21 | 2009-08-27 | 三洋電機株式会社 | 太陽電池モジュール |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014135377A (ja) * | 2013-01-10 | 2014-07-24 | Kyocera Corp | 光電変換モジュール |
CN104779311A (zh) * | 2014-01-15 | 2015-07-15 | 聚日(苏州)科技有限公司 | 一种太阳能电池组件及其形成方法 |
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