WO2012070924A1 - A method for nanowires and nanotubes growth - Google Patents

A method for nanowires and nanotubes growth Download PDF

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Publication number
WO2012070924A1
WO2012070924A1 PCT/MY2011/000073 MY2011000073W WO2012070924A1 WO 2012070924 A1 WO2012070924 A1 WO 2012070924A1 MY 2011000073 W MY2011000073 W MY 2011000073W WO 2012070924 A1 WO2012070924 A1 WO 2012070924A1
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catalyst
nanowires
nanotubes
deposition
insulating layer
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PCT/MY2011/000073
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French (fr)
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Daniel Bien Chia Sheng
Teh Aun Shih
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Mimos Berhad
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Publication of WO2012070924A1 publication Critical patent/WO2012070924A1/en

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    • B82Y40/00—Manufacture or treatment of nanostructures
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    • B01J23/06—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of zinc, cadmium or mercury
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    • B01J23/74—Iron group metals
    • B01J23/75—Cobalt
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    • B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
    • B01J37/349—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of flames, plasmas or lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
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    • H01L21/02518—Deposited layers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
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    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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    • H01L21/02617—Deposition types
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/602—Nanotubes

Definitions

  • the present invention relates to a method for growing nanowires and nanotubes.
  • Nanotubes and nanowires have unique electrical, thermal and mechanical characteristics which can be exploited for next- generation microelectronics, energy conversion and bio-sensing applications.
  • the selection of catalyst type and the growth sequence are very important to ensure that the desired multi-type nanotubes or nanowires structures are achieved. For instance, if it is required to have silicon nanowires as the first nanowires (10) and zinc oxide nanowires as the second nanowires (20), thus both of the nanowires (10, 20) cannot be grown by using only gold (Au) catalyst.
  • Another catalyst type needs to be selected that allows the growth of the first nanowires (10) and not the second nanowires (20) and therefore, aluminium thin films can be used to grow the silicon nanowires as the first nanowires (10).
  • the growth sequence relates to the selection of the type of catalyst as a first and second nanowires or nanotubes (10, 20).
  • the second nanowires (20) should not be grown at similar temperature range of the first nanowires or nanotubes (10). Therefore, the material used for the second catalyst (21) has a relatively higher temperature range than the material used for the first catalyst (11).
  • the first nanotubes or nanowires (10) are grown from the nucleated first catalyst (12).
  • the first nanotubes or nanowires (10) are grown by using either one of the following methods: chemical vapour deposition (CVD), metal-organic chemical vapour deposition (MOCVD), plasma enhanced chemical vapour deposition (PECVD), hot wire chemical vapour deposition (HWCVD), atomic layer deposition (ALD), electromechanical deposition, solution chemical deposition or any combination thereof.
  • CVD chemical vapour deposition
  • MOCVD metal-organic chemical vapour deposition
  • PECVD plasma enhanced chemical vapour deposition
  • HWCVD hot wire chemical vapour deposition
  • ALD atomic layer deposition
  • electromechanical deposition solution chemical deposition or any combination thereof.

Abstract

The present invention provides a method for nanowires and nanotubes (10, 20) growth. The nanowires and nanotubes (10, 20) have a plurality of first nanowires (10) and a plurality of second nanowires (20) grown on a single substrate (30). The first and second nanowires (10, 20) are grown using two different types of catalyst materials (11, 21), wherein the first nanowires (10) are grown using a first catalyst (11) whereas the second nanowires (20) are grown using a second catalyst (21).

Description

A METHOD FOR NANOWIRES AND NANOTUBES GROWTH
FIELD OF INVENTION
The present invention relates to a method for growing nanowires and nanotubes.
BACKGROUND OF THE INVENTION
There have been significant interest and development efforts by researchers in the area of nanotubes and nanowires. Nanotubes and nanowires have unique electrical, thermal and mechanical characteristics which can be exploited for next- generation microelectronics, energy conversion and bio-sensing applications.
In bio-sensing applications, nanowires made of a single type of material such as silicon nanowires have some limitations. One of the limitations is the overall selectivity of the sensing element. Typically, a sensing element comprising only a single type of nanowire can be sensitive to a few types of ions, hence there is a potential problem of cross sensitivity during utilization. By having nanowires or nanotubes with multiple types of materials that are selective to the same ions, overall selectivity of the sensing elements increases. Moreover, nanowires or nanotubes with multiple types of materials further increases the density of a sensing element and thus, allowing the detection of more ions. Hence, sensitivity of the sensing element is improved. However, most nanowires with multiple types of materials relates to nanowires having multiple layers of materials instead of growing multiple type of nanowires on a single substrate. PCT Application No. WO/2008/126983 discloses a multi-structure nanowire in which silicon nanowires are formed at both ends of a compound semiconductor nanorod, and a method of manufacturing the multi-structure nanowire. The method includes providing a compound semiconductor nanorod; forming metal catalyst tips on both ends of the compound semiconductor nanorod; and growing silicon nanowires on both ends of the compound semiconductor nanorod where the metal catalyst tips are formed.
US Patent Application No. 20100133509 discloses a method for fabricating a semiconductor nanowire that has first and second regions. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the first region from the catalyst particle via a vapor-liquid-solid phase growth. A protective coating is formed on a sidewall of the first region, and a second source gas is introduced to grow the second region extending from the first region via the liquid-solid-phase growth.
However, none of the prior arts address to increase selectivity of the sensing element. Therefore, there is a need to provide nanowires and nanotubes having multiple types of materials for increasing the selectivity of the sensing element. In addition, there is also a need to provide a method for growing nanowires or nanotubes having multiple types of materials.
SUMMARY OF INVENTION
The present invention relates to a method for growing nanowires or nanotubes (10, 20) having multiple types of materials on a single substrate (30). In one aspect of the invention, a method for nanowires or nanotubes (10, 20) growth is characterized by the steps of depositing an insulating layer (40) onto a substrate (30); depositing a first catalyst (11) on the insulating layer (40); annealing the substrate (30) with the insulating layer (40) and the first catalyst deposition (11) to nucleate the first catalyst (11);depositing a second catalyst (21) on the nucleated first catalyst (12); annealing the substrate (30) with the insulating layer (40), the nucleated first catalyst (12) and the second catalyst deposition (21) to nucleate the second catalyst (21);growing a plurality of first nanowires or nanotubes (10) from the nucleated first catalyst (12); and growing a plurality of second nanowires or nanotubes (20) from the nucleated second catalyst (22).
In another aspect of the invention, a method for nanowires or nanotubes (10, 20) growth is characterized by the steps of depositing an insulating layer (40) onto a substrate (30); depositing a first catalyst (11) on the insulating layer (40); depositing a second catalyst (21) on the first catalyst (11); annealing the substrate (30) with the insulating layer (40), the first and second catalyst deposition (11 , 21) to nucleate the first and second catalysts (11, 21); growing a plurality of first nanowires or nanotubes (10) from the nucleated first catalyst (12); and growing a plurality of second nanowires or nanotubes (20) from the nucleated second catalyst (22). Advantageously, the present invention produces nanowires and nanotubes with improved selectivity when using the nanowires and nanotubes as sensing element. BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 illustrates nanowires having two types of materials on a single substrate.
FIGS. 2(a-g) illustrate a method for growing nanowires having two types of materials on a single substrate according to a first embodiment of the present invention.
FIGS. 3(a-f) illustrate a method for growing having two types of materials on a single substrate according to a second embodiment of the present invention.
FIG. 4 illustrates a schematic view of the dispersion of two types of nucleated catalyst material on a single substrate.
DESCRIPTION OF THE PREFFERED EMBODIMENTS
Preferred embodiments of the present invention will be described herein below with reference to the accompanying drawings. In the following description, well know functions or constructions are not described in detail since they would obscure the description with unnecessary detail.
Referring now to FIG. 1 , there is provided a plurality of first nanowires or nanotubes (10) and a plurality of second nanowires or nanotubes (20) grown on a single substrate (30). The first and second nanowires or nanotubes (10, 20) are grown using two different types of catalyst materials, wherein the first nanowires or nanotubes (10) are grown from a nucleated first catalyst (12) whereas the second nanowires or nanotubes (20) are grown from a nucleated second catalyst (22). As an example, the first nanowires (10) are silicon nanowires grown using gold catalyst, whereas the second nanowires (20) are tungsten nanowires grown using tungsten catalyst.
The first and second nanowires or nanotubes (10, 20) grown on a single substrate (30) can be of a combination of metallic nanowires, carbon nanotubes and/or semiconducting nanowires such as but not limited to metal oxides, silicon or lll-V materials. An example of the catalyst material are iron (Fe), nickel (Ni), and cobalt (Co) catalyst to grow carbon nanotubes, gold (Au) catalyst to grow silicon nanowires and zinc nanowires, tungsten catalyst to grow tungsten nanowires and tungsten oxide nanowires, aluminium or copper thin films to grow silicon nanowires.
The selection of catalyst type and the growth sequence are very important to ensure that the desired multi-type nanotubes or nanowires structures are achieved. For instance, if it is required to have silicon nanowires as the first nanowires (10) and zinc oxide nanowires as the second nanowires (20), thus both of the nanowires (10, 20) cannot be grown by using only gold (Au) catalyst. Another catalyst type needs to be selected that allows the growth of the first nanowires (10) and not the second nanowires (20) and therefore, aluminium thin films can be used to grow the silicon nanowires as the first nanowires (10). The growth sequence relates to the selection of the type of catalyst as a first and second nanowires or nanotubes (10, 20). As the first nanowires (10) are grown, the second nanowires (20) should not be grown at similar temperature range of the first nanowires or nanotubes (10). Therefore, the material used for the second catalyst (21) has a relatively higher temperature range than the material used for the first catalyst (11).
Preferably, the types of catalysts selected for growing the first and second nanowires or nanotubes (10, 20) are able to target similar type of ions to improve selectivity of sensing element having the first and second nanowires or nanotubes (10, 20).
Referring now to FIGS. 2(a-g), there are provided a first embodiment of the present invention which relates to a method of growing the nanowires or nanotubes (10, 20) having two different types of materials as shown in FIG. 1. Initially, an insulating layer (40) is deposited onto a substrate layer (30) as shown in FIG. 2a. The insulating layer (40) isolates the nanowires or nanotubes (10, 20) from the substrate (30). Preferably, the insulating layer (40) is made of silicon dioxide or silicon nitride. The insulating layer (40) is deposited by using physical or chemical deposition (PVD or CVD) method. Alternatively, the insulating layer (40) can be grown by thermal oxidation method. In FIG. 2b, a first catalyst (11) is deposited on the insulating layer (40). Preferably, the first catalyst (11) is deposited by physical or chemical deposition (PVD orCVD) method. The material for the first catalyst (11) is selected from a group comprising but not limited to gold (Au), cobalt (Co), iron (Fe), nickel (Ni), indium (In), aluminium (Al), tungsten (W), zinc (Zn) and copper (Cu).
Thereon, the substrate (30) having the insulating layer on top of it and the first catalyst (11) deposition on the insulating layer (40) is annealed at a predetermined temperature as shown in FIG. 2c. Preferably, the substrate (30) is annealed at a temperature between 200 to 800°C. The annealing step causes the nucleation of the first catalyst (11) and thus, forming a plurality of nucleation sites (12) of the first catalyst (11)across the surface of the insulating layer (40). Each nucleation sites (12) of the first catalyst (11 ) have a dimension between 1 to 10Onm.
.
Referring now to FIG. 2d, a second catalyst material (21) is deposited on top of the nucleated first catalyst (12). The material of the second catalyst (21) is different from the material used for the first catalyst (11). The material of the second catalyst
(21) has a relatively higher growth temperature than the material of the first catalyst (11) and it is selected from a group comprising but not limited to gold (Au), cobalt
(Co), iron (Fe), nickel (Ni), indium (In), aluminium (Al), tungsten (W), zinc (Zn) and copper (Cu). The second catalyst material (21) is deposited by using physical or chemical deposition (PVD or CVD) method. Thereon, the substrate (30) having the insulating layer (40) on top of it, the nucleated first catalyst (12) and the second catalyst (21) is annealed at a predetermined temperature as shown in FIG. 2e. Preferably, the substrate (30), the insulating layer (40), nucleated first catalyst (12) and second catalyst (21) are annealed at a temperature between 200 to 800°C. The annealing step causes the nucleation of the second catalyst (21) and thus, forming a plurality of nucleation sites
(22) of the second catalyst (21 )with a dimension between 1 to 100nm. Thus, a plurality of nucleated sites (12, 22) of the first and second catalysts (11 , 21) are dispersed across the surface of the insulating layer (40) as shown in FIG. 4. In FIG. 2f, the first nanotubes or nanowires (10) are grown from the nucleated first catalyst (12). The first nanotubes or nanowires (10) are grown by using either one of the following methods: chemical vapour deposition (CVD), metal-organic chemical vapour deposition (MOCVD), plasma enhanced chemical vapour deposition (PECVD), hot wire chemical vapour deposition (HWCVD), atomic layer deposition (ALD), electromechanical deposition, solution chemical deposition or any combination thereof. The material for first nanotubes or nanowires (10) is selected from group comprising but not limited to single walled carbon nanotubes (SWNT), multi-walled carbon nanotubes (MWNT), silicon nanowires, tungsten nanowires, silicon nanowires, tungsten nanowires, gold nanowires or any combination thereof. During the growth of the first nanowires or nanotubes (10), the second nanowires or nanotubes (20)are not grown from the nucleated second catalyst (22).
Lastly, the second nanotubes or nanowires (20) are grown as shown in FIG. 2g. The second nanotubes or nanowires (20) are grown by using either one of the methods of chemical vapour deposition (CVD), metal-organic chemical vapour deposition (MOCVD), plasma enhanced chemical vapour deposition (PECVD), hot wire chemical vapour deposition (HWCVD), atomic layer deposition (ALD), electromechanical deposition, solution chemical deposition and combination thereof. The material for second nanotubes or nanowires (20) is selected from group comprising but not limited to single walled carbon nanotubes (SWNT), multi-walled carbon nanotubes (MWNT), silicon nanowires, tungsten nanowires, silicon nanowires, tungsten nanowires, gold nanowires or any combination thereof. Alternatively, after the first and second nanowires or nanotubes (10, 20) have been grown, the nanotubes or nanowires (10, 20) are coated and functionalized with organic or inorganic material to further improve the conductivity, sensitivity and/or selectivity of the nanowires or nanotubes (10, 20). Preferably, the nanowires or nanotubes (10, 20) are coated and functionalized by either one of the following methods: dispensing, spin coating, sputtering, evaporation or chemical vapour deposition (CVD).
Referring now to FIGS. 3(a-f), there are provided a second embodiment of the present invention which relates to a method of growing the nanowires or nanotubes (10, 20) having two different types of materials as shown in FIG. 1. Initially, an insulating layer (40) is deposited onto a substrate (30) as shown in FIG. 3a. Preferably, the insulating layer (40) is made of silicon dioxide or silicon nitride. The insulating layer (40) is deposited through physical or chemical vapour deposition (PVD or CVD) method. Alternatively, the insulating layer (40) can be grown by thermal oxidation method.
Thereon, as in FIG. 3b, a first catalyst (11) is deposited on the insulating layer (40). The first catalyst (11) is deposited by using physical or chemical vapour deposition (PVD or CVD) method. The material for the first catalyst (11) is selected from a group comprising but not limited to gold (Au), cobalt (Co), iron (Fe), nickel (Ni), indium (In), aluminium (Al), tungsten (W), zinc (Zn) and copper (Cu).
In FIG. 3c, a second catalyst (21) is deposited on top of the first catalyst (11). The material used for the second catalyst (21 ) is different from the material used for the first catalyst (11). The material of the second catalyst (21) has a relatively higher growth temperature than the material of the first catalyst (11) and it is selected from a group comprising but not limited to gold (Au), cobalt (Co), iron (Fe), nickel (Ni), indium (In), aluminium (Al), tungsten (W), zinc (Zn) and copper (Cu). The second catalyst material (21) is deposited by using physical or chemical deposition (PVD or CVD) method.
The substrate (30) along with the insulating layer (40), the first catalyst (11) and the second catalyst (21) is annealed at a predetermined temperature as shown in FIG. 3d. Preferably, the substrate (30), the insulating layer (40), the first catalyst (11) and the second catalyst (21) are annealed at a temperature between 200 to 800°C. The annealing step causes the nucleation of the first catalyst (11) and the second catalyst (21) across the insulating layer (40) surface and thus, forming a plurality of nucleation sites (12, 22) of the first and second catalysts (11 , 21) with a dimension between 1 to 100nm as shown in FIG. 4.
Thereon, the first nanotubes or nanowires (10) are grown from the nucleated first catalyst (12) as shown in FIG. 3e. The first nanotubes or nanowires (10) are grown by using either one of the following methods: chemical vapour deposition (CVD), metal-organic chemical vapour deposition (MOCVD), plasma enhanced chemical vapour deposition (PECVD), hot wire chemical vapour deposition (HWCVD), atomic layer deposition (ALD), electromechanical deposition, solution chemical deposition or any combination thereof. The material for the first nanotubes or nanowires (10) is selected from group comprising but not limited to single walled carbon nanotubes (SWNT), multi-walled carbon nanotubes (MWNT), silicon nanowires, tungsten nanowires, silicon nanowires, tungsten nanowires, gold nanowires or any combination thereof.
Lastly, the second nanotubes or nanowires (20) are grown as shown in FIG. 3f. The second nanotubes or nanowires (20) are grown by using either one of the methods of chemical vapour deposition (CVD), metal-organic chemical vapour deposition (MOCVD), plasma enhanced chemical vapour deposition (PECVD), hot wire chemical vapour deposition (HWCVD), atomic layer deposition (ALD), electromechanical deposition, solution chemical deposition and combination thereof. The material for the second nanotubes or nanowires (20) is selected from group comprising but not limited to single walled carbon nanotubes (SWNT), multi-walled carbon nanotubes (MWNT), silicon nanowires, tungsten nanowires, silicon nanowires, tungsten nanowires, gold nanowires or any combination thereof.
Alternatively, after the first and second nanowires or nanotubes (10, 20) have been grown, the nanotubes/nanowires (10, 20) are coated and functionalized with organic or inorganic material to further improve the conductivity, sensitivity and/or selectivity of the nanowires (10, 20). Preferably, the nanowires (10, 20) are coated and functionalized by either one of the following methods: dispensing, spin coating, sputtering, evaporation or chemical vapour deposition (CVD).
Although described in the description that the methods are used for growing nanowires or nanotubes (10, 20) having two types of materials, the methods can be extended and adapted for growing nanowires or nanotubes having more than two types of materials.
While embodiments of the invention have been illustrated and described, it is not intended that these embodiments illustrated and describe all possible forms of the invention. Rather, the words used in the specifications are words of description rather than limitation and various changes may be made without departing from the scope of the invention.

Claims

1. A method for nanowires or nanotubes (10, 20) growth characterized by the steps of:
a) depositing an insulating layer (40) onto a substrate (30); b) depositing a first catalyst ( 1) on the insulating layer (40); c) annealing the substrate (30) with the insulating layer (40) and the first catalyst deposition (11)to nucleate the first catalyst (11); d) depositing a second catalyst (21 ) on the nucleated first catalyst (12); e) annealing the substrate (30)with the insulating layer (40), the nucleated first catalyst (12) and the second catalyst deposition (21) to nucleate the second catalyst (21); f) growing a plurality of first nanowires or nanotubes (10) from the nucleated first catalyst (12); and g) growing a plurality of second nanowires or nanotubes (20) from the nucleated second catalyst (22).
2. A method as claimed in steps (b) and (d) of claim 1 , wherein the first and second catalysts (11 , 21) are deposited by using physical or chemical deposition (PVD or CVD) method.
3. A method as claimed in claim 1 , wherein the material of the first and second catalysts (11 , 21) is selected from a group comprising gold (Au), cobalt (Co), iron (Fe), nickel (Ni), indium (In), aluminium (Al), tungsten (W), zinc (Zn) and copper (Cu).
4. A method as claimed in claim 4, wherein the material of the second catalyst (21 ) has a relatively higher growth temperature than the material of the first catalyst (11 ).
A method as claimed in step (f) and (g) of claim 1 , wherein the first and second nanotubes or nanowires (10, 20) are grown by using either one of the following methods: chemical vapour deposition (CVD), metal-organic chemical vapour deposition (MOCVD), plasma enhanced chemical vapour deposition (PECVD), hot wire chemical vapour deposition (HWCVD), atomic layer deposition (ALD), electromechanical deposition, solution chemical deposition or any combination thereof.
A method as claimed in claim 1 , wherein the method further comprising the steps of:
a) coating and functionalizing the first and second nanotubes or nanowires (10, 20) with organic or inorganic material.
A method for nanowires or nanotubes (10, 20) growth characterized by the steps of:
a) depositing an insulating layer (40) onto a substrate (30); b) depositing a first catalyst (11) on the insulating layer (40); c) depositing a second catalyst (21 ) on the first catalyst (11 ); d) annealing the substrate (30) with the insulating layer (40), the first and second catalyst deposition (11 , 21) to nucleate the first and second catalysts (11 , 21); e) growing a plurality of first nanowires or nanotubes (10) from the nucleated first catalyst (12); and f) growing a plurality of second nanowires or nanotubes (20) from the nucleated second catalyst (22).
8. A method as claimed in steps (b) and (c) of claim 7, wherein the first and second catalysts (11 , 21) are deposited by using physical or chemical deposition (PVD or CVD) method.
9. A method as claimed in claim 7, wherein the material of the first and second catalysts (11 , 21) is selected from a group comprising gold (Au), cobalt (Co), iron (Fe), nickel (Ni), indium (In), aluminium (Al), tungsten (W), zinc (Zn) and copper (Cu).
10. A method as claimed in claim 9, wherein the material of the second catalyst (21) has a relatively higher growth temperature than the material of the first catalyst (11).
A method as claimed in step (e) and (f) of claim 7, wherein the first and second nanotubes or nanowires (10, 20) are grown by using either one of the following methods: chemical vapour deposition (CVD), metal-organic chemical vapour deposition (MOCVD), plasma enhanced chemical vapour deposition (PECVD), hot wire chemical vapour deposition (HWCVD), atomic layer deposition (ALD), electromechanical deposition, solution chemical deposition or any combination thereof.
A method as claimed in claim 7, wherein the method further comprising the steps of:
a) coating and functionalizing the first and second nanotubes or nanowires (10, 20) with organic or inorganic material.
PCT/MY2011/000073 2010-11-24 2011-06-06 A method for nanowires and nanotubes growth WO2012070924A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014088405A1 (en) * 2012-12-06 2014-06-12 Mimos Berhad A method of producing nanowires of two different materials

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080020923A1 (en) * 2005-09-13 2008-01-24 Debe Mark K Multilayered nanostructured films
US7344961B2 (en) * 2004-07-07 2008-03-18 Nanosys, Inc. Methods for nanowire growth

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7344961B2 (en) * 2004-07-07 2008-03-18 Nanosys, Inc. Methods for nanowire growth
US20080020923A1 (en) * 2005-09-13 2008-01-24 Debe Mark K Multilayered nanostructured films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014088405A1 (en) * 2012-12-06 2014-06-12 Mimos Berhad A method of producing nanowires of two different materials

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