WO2012067349A3 - 고분자 화합물 및 이를 포함하는 액침 노광 프로세스용 레지스트 보호막 조성물 - Google Patents
고분자 화합물 및 이를 포함하는 액침 노광 프로세스용 레지스트 보호막 조성물 Download PDFInfo
- Publication number
- WO2012067349A3 WO2012067349A3 PCT/KR2011/007655 KR2011007655W WO2012067349A3 WO 2012067349 A3 WO2012067349 A3 WO 2012067349A3 KR 2011007655 W KR2011007655 W KR 2011007655W WO 2012067349 A3 WO2012067349 A3 WO 2012067349A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resist
- polymer compound
- composition including
- exposure process
- liquid immersion
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
- C08F22/04—Anhydrides, e.g. cyclic anhydrides
- C08F22/06—Maleic anhydride
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F18/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid or of a haloformic acid
- C08F18/14—Esters of polycarboxylic acids
- C08F18/16—Esters of polycarboxylic acids with alcohols containing three or more carbon atoms
- C08F18/18—Diallyl phthalate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/10—Esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L45/00—Compositions of homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic ring system; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09D133/10—Homopolymers or copolymers of methacrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D135/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical, and containing at least another carboxyl radical in the molecule, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D145/00—Coating compositions based on homopolymers or copolymers of compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic or in a heterocyclic system; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Epoxy Resins (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
고분자 화합물 및 이를 포함하는 액침 노광 프로세스용 레지스트 보호막 조성물이 제시된다.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201180055444.XA CN103221437B (zh) | 2010-11-17 | 2011-10-14 | 高分子化合物及包含其的用于液浸曝光工艺的抗蚀剂保护膜组合物 |
SG2013038658A SG190338A1 (en) | 2010-11-17 | 2011-10-14 | Polymer compound, and resist-protecting film composition including same for a liquid immersion exposure process |
US13/897,014 US8859194B2 (en) | 2010-11-17 | 2013-05-17 | Polymer compound, and resist-protecting film composition including same for a liquid immersion exposure process |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0114558 | 2010-11-17 | ||
KR20100114558 | 2010-11-17 | ||
KR1020110024347A KR101099506B1 (ko) | 2010-11-17 | 2011-03-18 | 고분자 화합물 및 이를 포함하는 액침 노광 프로세스용 레지스트 보호막 조성물 |
KR10-2011-0024347 | 2011-03-18 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/897,014 Continuation US8859194B2 (en) | 2010-11-17 | 2013-05-17 | Polymer compound, and resist-protecting film composition including same for a liquid immersion exposure process |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012067349A2 WO2012067349A2 (ko) | 2012-05-24 |
WO2012067349A3 true WO2012067349A3 (ko) | 2012-07-19 |
Family
ID=45507067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/007655 WO2012067349A2 (ko) | 2010-11-17 | 2011-10-14 | 고분자 화합물 및 이를 포함하는 액침 노광 프로세스용 레지스트 보호막 조성물 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8859194B2 (ko) |
KR (1) | KR101099506B1 (ko) |
CN (1) | CN103221437B (ko) |
SG (1) | SG190338A1 (ko) |
TW (1) | TWI527831B (ko) |
WO (1) | WO2012067349A2 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101099506B1 (ko) * | 2010-11-17 | 2011-12-27 | 주식회사 동진쎄미켐 | 고분자 화합물 및 이를 포함하는 액침 노광 프로세스용 레지스트 보호막 조성물 |
JP2013075963A (ja) * | 2011-09-29 | 2013-04-25 | Jsr Corp | 化合物、重合体及びフォトレジスト組成物 |
KR102126894B1 (ko) * | 2013-03-11 | 2020-06-25 | 주식회사 동진쎄미켐 | 리소그래피용 레지스트 보호막 형성용 조성물 및 이를 이용한 반도체 소자의 패턴 형성 방법 |
JP6090585B2 (ja) * | 2013-12-18 | 2017-03-08 | 信越化学工業株式会社 | スルホニウム塩、レジスト組成物及びレジストパターン形成方法 |
JPWO2016052384A1 (ja) * | 2014-09-30 | 2017-05-25 | 富士フイルム株式会社 | パターン形成方法、上層膜形成用組成物、レジストパターン、及び、電子デバイスの製造方法 |
CN106605174B (zh) * | 2014-09-30 | 2020-05-19 | 富士胶片株式会社 | 负型图案形成方法、保护膜形成用组合物及电子元件制法 |
JP6455155B2 (ja) * | 2015-01-08 | 2019-01-23 | Jsr株式会社 | レジスト組成物、レジストパターン形成方法、重合体及び化合物 |
KR102347618B1 (ko) * | 2015-04-02 | 2022-01-05 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물 |
KR101789556B1 (ko) | 2015-06-03 | 2017-10-25 | 금호석유화학 주식회사 | 신규 아크릴계 중합체를 포함한 포토레지스트 미세패턴 형성용 조성물, 이의 제조 방법 및 이를 이용한 포토레지스트 미세패턴 형성방법 |
US11613519B2 (en) | 2016-02-29 | 2023-03-28 | Rohm And Haas Electronic Materials Llc | Photoacid-generating monomer, polymer derived therefrom, photoresist composition including the polymer, and method of forming a photoresist relief image using the photoresist composition |
KR102656746B1 (ko) * | 2017-02-03 | 2024-04-11 | 도오꾜오까고오교 가부시끼가이샤 | 레지스트 조성물 및 레지스트 패턴 형성 방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000109525A (ja) * | 1998-10-08 | 2000-04-18 | Korea Kumho Petrochemical Co Ltd | 感放射線性レジスト製造用重合体及びこれを含有するレジスト組成物 |
KR20060046439A (ko) * | 2004-06-14 | 2006-05-17 | 후지 샤신 필름 가부시기가이샤 | 액침 노광용 보호막 형성 조성물 및 이를 사용한패턴형성방법 |
US7288362B2 (en) * | 2005-02-23 | 2007-10-30 | International Business Machines Corporation | Immersion topcoat materials with improved performance |
KR20090088329A (ko) * | 2008-02-14 | 2009-08-19 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 재료, 레지스트 보호막 재료 및 패턴 형성 방법 |
KR20100048896A (ko) * | 2008-10-30 | 2010-05-11 | 마루젠 세끼유가가꾸 가부시키가이샤 | 농도가 균일한 반도체 리소그래피용 공중합체 용액의 제조 방법 |
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KR100261022B1 (ko) * | 1996-10-11 | 2000-09-01 | 윤종용 | 화학증폭형 레지스트 조성물 |
KR100673097B1 (ko) * | 2003-07-29 | 2007-01-22 | 주식회사 하이닉스반도체 | 포토레지스트 중합체 및 이를 포함하는 포토레지스트 조성물 |
KR101156975B1 (ko) * | 2005-06-24 | 2012-06-20 | 주식회사 동진쎄미켐 | 포토레지스트용 폴리머 및 이를 포함하는 포토레지스트 조성물 |
US7569326B2 (en) * | 2006-10-27 | 2009-08-04 | Shin-Etsu Chemical Co., Ltd. | Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process |
JP5201363B2 (ja) * | 2008-08-28 | 2013-06-05 | 信越化学工業株式会社 | 重合性アニオンを有するスルホニウム塩及び高分子化合物、レジスト材料及びパターン形成方法 |
TWI400226B (zh) * | 2008-10-17 | 2013-07-01 | Shinetsu Chemical Co | 具有聚合性陰離子之鹽及高分子化合物、光阻劑材料及圖案形成方法 |
WO2010071029A1 (ja) * | 2008-12-15 | 2010-06-24 | セントラル硝子株式会社 | 含フッ素重合性単量体、含フッ素重合体、レジスト材料及びパターン形成方法 |
KR101305111B1 (ko) * | 2010-06-30 | 2013-09-05 | 주식회사 동진쎄미켐 | 레지스트 보호막 형성용 중합체, 레지스트 보호막 형성용 조성물 및 이를 이용한 반도체 소자의 패턴 형성방법 |
KR101099506B1 (ko) * | 2010-11-17 | 2011-12-27 | 주식회사 동진쎄미켐 | 고분자 화합물 및 이를 포함하는 액침 노광 프로세스용 레지스트 보호막 조성물 |
-
2011
- 2011-03-18 KR KR1020110024347A patent/KR101099506B1/ko active IP Right Grant
- 2011-10-14 CN CN201180055444.XA patent/CN103221437B/zh not_active Expired - Fee Related
- 2011-10-14 SG SG2013038658A patent/SG190338A1/en unknown
- 2011-10-14 WO PCT/KR2011/007655 patent/WO2012067349A2/ko active Application Filing
- 2011-11-17 TW TW100142104A patent/TWI527831B/zh active
-
2013
- 2013-05-17 US US13/897,014 patent/US8859194B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000109525A (ja) * | 1998-10-08 | 2000-04-18 | Korea Kumho Petrochemical Co Ltd | 感放射線性レジスト製造用重合体及びこれを含有するレジスト組成物 |
KR20060046439A (ko) * | 2004-06-14 | 2006-05-17 | 후지 샤신 필름 가부시기가이샤 | 액침 노광용 보호막 형성 조성물 및 이를 사용한패턴형성방법 |
US7288362B2 (en) * | 2005-02-23 | 2007-10-30 | International Business Machines Corporation | Immersion topcoat materials with improved performance |
KR20090088329A (ko) * | 2008-02-14 | 2009-08-19 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 재료, 레지스트 보호막 재료 및 패턴 형성 방법 |
KR20100048896A (ko) * | 2008-10-30 | 2010-05-11 | 마루젠 세끼유가가꾸 가부시키가이샤 | 농도가 균일한 반도체 리소그래피용 공중합체 용액의 제조 방법 |
Also Published As
Publication number | Publication date |
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US8859194B2 (en) | 2014-10-14 |
CN103221437A (zh) | 2013-07-24 |
US20130252170A1 (en) | 2013-09-26 |
SG190338A1 (en) | 2013-06-28 |
TWI527831B (zh) | 2016-04-01 |
KR101099506B1 (ko) | 2011-12-27 |
TW201235361A (en) | 2012-09-01 |
CN103221437B (zh) | 2016-02-17 |
WO2012067349A2 (ko) | 2012-05-24 |
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