WO2012066742A1 - 慣性力センサ - Google Patents
慣性力センサ Download PDFInfo
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- WO2012066742A1 WO2012066742A1 PCT/JP2011/006184 JP2011006184W WO2012066742A1 WO 2012066742 A1 WO2012066742 A1 WO 2012066742A1 JP 2011006184 W JP2011006184 W JP 2011006184W WO 2012066742 A1 WO2012066742 A1 WO 2012066742A1
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- layer
- force sensor
- inertial force
- electrode
- capacitance
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/097—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by vibratory elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
Definitions
- the present invention relates to an inertial force sensor for detecting an acceleration, an angular velocity or the like used in a portable terminal, a vehicle or the like.
- FIG. 11 is a cross-sectional view of a conventional inertial force sensor 1.
- the inertial force sensor 1 includes a base 2, a lower electrode layer 3 formed on the base 2, a piezoelectric layer 4 formed on the lower electrode layer 3, and an upper electrode layer 5 formed on the piezoelectric layer 4. Is equipped.
- the noise level may be increased, and the power consumption of the circuit unit connected to the inertial force sensor 1 may be increased.
- Patent Document 1 discloses an inertial force sensor similar to the inertial force sensor 1.
- the inertial force sensor includes a substrate, a transducer provided on the substrate, and a wire provided on the substrate and connected to the transducer.
- the wiring includes a lower electrode layer formed on the substrate, a piezoelectric layer formed on the lower electrode layer, a capacity reducing layer formed on the piezoelectric layer, and an upper electrode layer formed on the capacity reducing layer.
- the relative permittivity of the capacitance reducing layer is smaller than the relative permittivity of the piezoelectric layer.
- This inertial force sensor can improve the noise level.
- FIG. 1A is a cross-sectional view of an inertial force sensor according to Embodiment 1 of the present invention.
- FIG. 1B is a cross-sectional view of another inertial force sensor according to Embodiment 1.
- FIG. 2A is a flowchart showing a manufacturing process of the inertial force sensor according to the first embodiment.
- FIG. 2B is a flowchart showing the manufacturing process of the inertial force sensor of the comparative example.
- FIG. 3 is a top view of still another inertial force sensor according to the first embodiment.
- FIG. 4A is a cross-sectional view of the inertial force sensor shown in FIG. 3 taken along line 4A-4A.
- FIG. 4B is a cross-sectional view of the inertial force sensor shown in FIG.
- FIG. 5A is a view showing a SEM photograph of a cross section taken along line 5A-5A of the inertial force sensor shown in FIG.
- FIG. 5B is a view showing a SEM photograph of a cross section of the inertial force sensor of the comparative example.
- 6 is a cross-sectional view of still another inertial force sensor according to Embodiment 1.
- FIG. 7 is a top view of still another inertial force sensor according to the first embodiment.
- FIG. 8A is a cross-sectional view of the inertial force sensor shown in FIG. 7 taken along line 8A-8A.
- FIG. 8B is a cross-sectional view of the inertial force sensor shown in FIG. 7 taken along line 8B-8B.
- FIG. 9 is a top view of an inertial force sensor according to Embodiment 2 of the present invention.
- FIG. 10 is a top view of the inertial force sensor according to the third embodiment of the present invention.
- FIG. 11 is a cross-sectional view of a conventional inertial force sensor.
- FIG. 1A is a cross-sectional view of inertial force sensor 6 in accordance with the first exemplary embodiment of the present invention.
- An inertial force sensor 6 for detecting an inertial force such as acceleration or angular velocity has a region in which a wire is formed.
- the relative permittivity of the capacitance reducing layer 10 is smaller than the relative permittivity of the piezoelectric layer 9.
- the capacitance between the lower electrode layer 8 and the upper electrode layer 11 can be reduced.
- the noise level of the inertial force sensor 6 can be reduced and the sensitivity can be improved.
- the power consumption of the circuit part connected to the inertial force sensor 6 can be suppressed.
- the substrate 7 is formed using a semiconductor material such as silicon (Si), a non-piezoelectric material such as fused quartz, or alumina.
- a semiconductor material such as silicon (Si)
- a non-piezoelectric material such as fused quartz, or alumina.
- a small inertial force sensor 6 can be produced using a microfabrication technique.
- other layers such as a barrier layer made of a silicon oxide film (SiO 2 ) or an adhesion layer made of titanium (Ti) may be formed on the surface of the substrate 7.
- the lower electrode layer 8 is made of, for example, a single metal comprising at least one of copper, silver, gold, titanium, tungsten, platinum, chromium, molybdenum, an alloy containing these as a main component, or a laminate of these metals. .
- a single metal comprising at least one of copper, silver, gold, titanium, tungsten, platinum, chromium, molybdenum, an alloy containing these as a main component, or a laminate of these metals.
- platinum (Pt) containing Ti or TiOx the lower electrode layer 8 having high electric power and excellent stability in a high temperature oxidizing atmosphere can be obtained.
- the thickness of the lower electrode layer 8 is 100 nm to 500 nm.
- the piezoelectric layer 9 is formed of, for example, a piezoelectric material such as zinc oxide, lithium tantalate, lithium niobate, or potassium niobate.
- a piezoelectric material such as zinc oxide, lithium tantalate, lithium niobate, or potassium niobate.
- Pb (Zr, Ti) O 3 lead zirconate titanate
- the thickness of the piezoelectric layer 9 is 1000 nm to 4000 nm.
- Another layer such as an orientation control layer made of titanate (PbTiO 3 ) may be formed on the lower surface of the piezoelectric layer 9, for example. The layer is disposed on the upper surface of the lower electrode layer 8.
- the capacitance reducing layer 10 is made of a material having insulating properties, capable of film formation in a low temperature process, and capable of minimizing damage to the piezoelectric layer 9 at the time of patterning, and made of a low dielectric constant organic material such as polyimide Become. Further, among the low dielectric constant organic materials, particularly, by using photosensitive polyimide, microfabrication is easy, and the capacitance reducing layer 10 excellent in chemical resistance can be obtained.
- an alkali-developable photosensitive polyimide that can be developed with an alkaline solution may be used for the capacity reducing layer 10.
- Alkali-developable photosensitive polyimide can be patterned by alkaline development, so that no acid that adversely affects the piezoelectric layer 9 is generated by the chemical reaction during pattern formation (developing step), and damage to the piezoelectric layer 9 is caused. It can be suppressed.
- the capacitance reducing layer 10 an inorganic material such as SiO 2 , SiN, SiON, SiC, Al 2 O 3 or the like having a lower relative dielectric constant as compared with the piezoelectric layer 9 may be used.
- the capacity reducing layer 10 of SiO 2 or SiN, the capacity reducing layer 10 excellent in durability such as chemical resistance and moisture resistance can be obtained.
- the thickness of the capacitance reducing layer 10 is 100 nm to 2000 nm.
- the upper electrode layer 11 is made of, for example, a single metal comprising at least one of copper, silver, gold, titanium, tungsten, platinum, chromium, molybdenum, an alloy containing these as a main component, or a laminate of these metals. .
- gold Au
- the thickness of the upper electrode layer 11 is 100 nm to 2000 nm.
- another layer such as an adhesion layer made of titanium (Ti) may be formed on the lower surface of the upper electrode layer 11. The layer is disposed on the top surface of the capacitance reducing layer 10.
- FIG. 1B is a cross-sectional view of another inertial force sensor 206 in the first embodiment.
- the inertial force sensor 206 includes a capacitance reducing layer 210 provided on the upper surface of the piezoelectric layer 9 instead of the capacitance reducing layer 10 of the inertial force sensor 6 shown in FIG. 1A.
- the upper electrode layer 11 is provided on the upper surface of the capacitance reducing layer 210.
- the capacitance reducing layer 210 is composed of the organic material layer 210C of the above-mentioned low dielectric constant organic material of the capacitance reducing layer 10, and the inorganic material layer 210D of the above low dielectric constant inorganic material provided on the upper surface of the organic material layer 210C.
- the organic material layer 210C and the inorganic material layer 210D are made of photosensitive polyimide and SiN, respectively. Thereby, damage to the piezoelectric layer 9 at the time of patterning can be minimized, and the capacity reducing layer 210 excellent in durability such as chemical resistance and moisture resistance can be obtained.
- FIG. 2A is a flowchart showing a manufacturing process of inertial force sensor 6 according to the first embodiment. Hereinafter, a method of manufacturing the inertial force sensor 6 will be described with reference to FIG. 2A.
- the lower electrode layer 8 is formed on the upper surface of the wafer to be the base 7 (step S101).
- the piezoelectric layer 9 is formed on the upper surface of the lower electrode layer 8 (step S102).
- the capacitance reducing layer 10 is formed on the upper surface of the piezoelectric layer 9 (step S103).
- step S103 The method of forming the capacitance reducing layer 10 in step S103 will be described below.
- a material such as polyimide is applied to the upper surface of the piezoelectric layer 9 (S103A).
- the applied material is patterned (step S103B).
- step S103C by performing a curing process of curing the patterned material (step S103C), the capacitance reducing layer 10 is obtained.
- the upper electrode layer 11 is formed on the upper surface of the capacitance reducing layer 10 (step S104), and then the upper electrode layer 11 is patterned (step S105). Thereafter, a voltage is applied between the upper electrode layer 11 and the lower electrode layer 8 to polarize the piezoelectric layer 9 (step S106). Thereafter, the wafer (base 7), the lower electrode layer 8, and the piezoelectric layer 9 are patterned (step S107), and the outer shape of the inertial force sensor 6 is processed (step S108). Next, the lower surface of the wafer (substrate 7) is polished so that the substrate 7 has a predetermined thickness (step S109), and the wafer is divided into individual substrates 7 by dicing (step S110). The sensor 6 is obtained. Next, the inertial force sensor 6 is obtained by inspecting the characteristics of the inertial force sensor 6 obtained in step S110 (step S111).
- FIG. 2B is a flow chart showing a manufacturing process of the conventional inertial force sensor 1 which is a comparative example shown in FIG. 11 without the capacitance reducing layer.
- the same parts as in the manufacturing process of inertial force sensor 6 in the first embodiment shown in FIG. 2A are assigned the same reference numerals.
- the upper electrode layer 5 is provided on the upper surface of the piezoelectric layer 4.
- the film forming process of piezoelectric layer 9 step S102
- the film forming process of upper electrode layer 11 step S104
- capacitance reduction layer 10 is performed in-between
- the capacitance reducing layer 10 is formed using photosensitive polyimide using diazonaphthoquinone (DNQ) as a photosensitizer.
- DNQ diazonaphthoquinone
- the capacity reduction layer 10 is preferably formed of an alkali-developable photosensitive polyimide.
- the imidization reaction (dehydration ring closure) of the polyamic acid (polyamic acid) which is a polyimide precursor proceeds to cure the polyimide.
- the polyamic acid dissolves in the organic solvent, and when it becomes a polyimide, it does not dissolve in the organic solvent. Therefore, before patterning, it is applied in the form of a solution in which an organic solvent containing a photosensitizer is bound to a polyamic acid, the solution is prebaked and dried, and a desired pattern is formed by exposure and development, followed by curing. A heat treatment is performed to obtain a patterned polyimide layer.
- Damage to the piezoelectric layer 9 can be suppressed by using, as the capacitance reducing layer 10, photosensitive polyimide having a low curing temperature, which is the temperature in the curing process.
- the Curie temperature of lead zirconate titanate is about 330 ° C. Therefore, the piezoelectric characteristics of the piezoelectric layer 9 disappear when a thermal stress higher than the Curie temperature is applied. , Becomes a paraelectric layer.
- the capacity reducing layer 10 is formed of photosensitive polyimide using diazonaphthoquinone as a photosensitive agent, but the capacity reducing layer 10 is formed of another photosensitive agent having another function and another photosensitive polyimide. It is also good.
- the capacitance between the upper electrode layer and the lower electrode layer of the inertial force sensor 6 of the example in the embodiment 1 having the capacitance reducing layer 10 and the inertial force sensor of the comparative example not having the capacitance reducing layer 10 Examine the differences.
- the relative dielectric constant ⁇ r of the piezoelectric layer 9 is 980, the film thickness d is 2.85 ( ⁇ m), and the dielectric constant ⁇ is 8,68 ⁇ 10 -9 (F / m).
- the dielectric constant ⁇ r of the alkali-developable photosensitive polyimide which is the material of the capacity reducing layer 10 in the example, is 3, the film thickness d is 0.5 ( ⁇ m), and the dielectric constant ⁇ is 2.66 ⁇ 10 ⁇ It is 11 (F / m).
- the capacitance C Total between the upper electrode layer 11 and the lower electrode layer 8 is a combined capacitance of a portion by the piezoelectric layer 9 and a portion by the capacitance reducing layer 10. is there.
- Capacitance C PE portion by the piezoelectric layer 9, the capacitance C PI parts by capacitance reducing layer 10, the capacitance C Total is represented by the following equation.
- C Total C PE ⁇ C PI / (C PE + C PI )
- the relative dielectric constant of the capacitance reducing layer 10 is only about 0.3% of the relative dielectric constant of the piezoelectric layer 9, so when these two layers form a synthetic capacitance, even if there is some difference in film thickness, C Total approaches the capacity C PE of the portion of the capacity reduction layer 10 alone.
- the capacitance C Total is about 1% of the capacitance C PE of only the piezoelectric layer 9.
- the capacitance reducing layer 10 made of a material having a low dielectric constant between the upper electrode layer 11 and the piezoelectric layer 9, the capacitance between the upper electrode layer 11 and the lower electrode layer 8 is largely reduced. be able to.
- an alkali-developable photosensitive polyimide is formed with a thickness of 1.6 ⁇ m as a capacity reducing layer 10 on a piezoelectric layer 9 with a thickness of 2.85 ⁇ m, and the upper electrode layer 11 is formed thereon.
- the upper electrode layer 11 includes a 10 nm thick Ti layer formed on the capacitance reducing layer 10 and a 300 nm thick Au layer formed on the Ti layer.
- a sample of a comparative example having the same structure as the sample of the example except that the capacity reducing layer 10 was not provided was produced.
- the capacitance of the sample of the comparative example in which the capacitance reducing layer 10 was not formed was 1887.0 pF, and the capacitance of the sample of the example in which the capacitance reducing layer 10 was formed was 16.9 pF.
- the capacity of the sample of the example in which the capacity reduction layer 10 is formed is 0.9% of the capacity of the sample of the comparative example in which the capacity reduction layer 10 is not formed, and was calculated by the above equation The street capacity reduction effect could be confirmed.
- FIG. 3 is a top view of still another inertial force sensor 12 according to the first embodiment.
- the inertial force sensor 12 includes a base 7, a drive electrode 16, a detection electrode 17, a monitor electrode 18, a wire 19, and an electrode pad 20.
- the drive electrode 16, the detection electrode 17, the monitor electrode 18, the wiring 19, and the electrode pad 20 are provided on the upper surface of the base 7.
- the base 7 is made of a silicon substrate and has a tuning fork shape having a support portion 13 and two arms 14 and 15 extending from the support portion 13 parallel to each other in the direction 12D along the central axis 12C.
- the arms 14 and 15 are disposed opposite to each other with respect to the central axis 12C.
- the arms 14, 15 vibrate at a unique resonant frequency.
- the detection electrode 17 is provided substantially at the center in the direction of the axis 12 E of each of the two arms 14 and 15.
- the drive electrodes 16 are provided on both sides of the detection electrode 17 in the direction of the axis 12E.
- a monitor electrode 18 is provided at the root of each of the arms 14 and 15 connected to the support portion 13.
- the drive electrode 16, the detection electrode 17, and the monitor electrode 18 are electrically connected to the electrode pad 20 through the wiring 19.
- the inertial force sensor 12 is configured to be applied with an angular velocity centered on the central axis 12C, and the inertial force sensor 12 functions as an angular velocity sensor that detects the angular velocity.
- a Y-axis and an X-axis extending in parallel with the central axis 12C and the axis 12E, respectively, are defined, and a Z-axis extending orthogonal to the X-axis and the Y-axis is defined.
- the drive electrode 16 and the monitor electrode 18 are connected to the electrode pad 20 via the wiring 19.
- a drive circuit is connected to the electrode pad 20.
- the detection electrode 17 is connected to the electrode pad 20 via the wiring 19.
- a detection circuit is connected to the electrode pad 20.
- the drive electrode 16 and the monitor electrode 18 are connected to a drive circuit, and the drive electrode 16, the monitor electrode 18 and the drive circuit constitute a drive loop that drives the inertial force sensor 12 and vibrates the arms 14, 15.
- the arms 14, 15 are configured to vibrate at a unique resonant frequency.
- a drive signal which is an AC voltage of the resonance frequency
- the monitor electrode 18 sends monitor signals corresponding to these vibrations to the drive circuit.
- the drive circuit controls the drive signal so that the arms 14 and 15 vibrate in the X axis direction with a constant amplitude at the resonance frequency based on the monitor signal.
- a detection signal which is a current generated by the charge generated from the detection electrode 17, is sent to the detection circuit via the wiring 19 and the electrode pad 20.
- the detection circuit can detect an angular velocity based on the detection signal.
- the detection electrode 17 is a transducer that converts mechanical strain or deformation generated in the arms 14 and 15 by Coriolis force into an electrical signal.
- the drive electrode 16 is a transducer that mechanically deforms based on the input electrical signal of the alternating voltage and vibrates the arms 14 and 15.
- the monitor electrode 18 is a transducer that outputs an electrical signal in response to mechanical vibration of the arms 14 and 15.
- the inertial force sensor 12 has an area AD where at least the detection electrode 17 is formed and divided by a boundary AC, and an area AE where at least the wire 19 is formed.
- the capacity of the portion provided with the capacity reducing layer 10 is reduced, and at the same time the piezoelectric characteristics of the portion are deteriorated. Therefore, the capacitance reducing layer 10 is not provided in the region AD having the detection electrode 17, and the capacitance reducing layer 10 is provided in the region AE having the wiring 19. With this configuration, it is possible to secure the piezoelectric characteristics of the area AD where the detection electrode 17 is formed while reducing the noise generated in the area AE where the wiring 19 is formed.
- the drive electrode 16 is formed in the region AD.
- the monitor electrode 18 is formed in the area AD. Thereby, the amplitude of the monitor signal input from the monitor electrode 18 to the drive circuit can be secured.
- the electrode pad 20 is formed in the area AE. Thereby, the noise generated in the electrode pad 20 can be reduced.
- the capacitance reducing layer 10 may be provided on portions where the drive electrode 16, the detection electrode 17, and the monitor electrode 18 are not formed, such as the end portions of the arms 14 and 15. Thereby, the mass of the arms 14 and 15 can be increased, and the sensitivity of the inertial force sensor 12 can be improved.
- FIG. 4A is a cross-sectional view of the inertial force sensor 12 shown in FIG. 3 taken along line 4A-4A in the region AD.
- the inertial force sensor 12 includes the base 7 which is each of the two arms 14 and 15, the lower electrode layer 8 formed on the upper surface of the base 7, and the piezoelectric layer formed on the upper surface of the lower electrode layer 8. 9 and an upper electrode layer 11 formed on the upper surface of the piezoelectric layer 9.
- the detection electrode 17 is provided substantially at the center of the base 7 (arms 14 and 15) in the X-axis direction.
- the drive electrodes 16 are provided on both sides of the detection electrode 17 in the X-axis direction.
- the capacitance reducing layer 10 is not formed in the region AD in which the drive electrode 16 and the detection electrode 17 in the arms 14 and 15 are provided.
- FIG. 4B is a cross-sectional view taken along line 4B-4B in the region AE of the inertial force sensor 12 shown in FIG.
- the inertial force sensor 12 includes the base 7 as the support 13, the lower electrode layer 8 formed on the upper surface of the base 7, the piezoelectric layer 9 formed on the upper surface of the lower electrode layer 8, and the piezoelectric layer And a top electrode layer 11 formed on the top surface of the capacitance reduction layer 10.
- the electrode pad 20 shown in FIG. 4B is electrically connected to the detection electrode 17, and the wire 19 is connected to the drive electrode 16 or the monitor electrode 18, respectively.
- the wire 19 connected to the detection electrode 17 has the same structure as the wire 19 connected to the drive electrode 16 and the monitor electrode 18.
- the capacitance reducing layer 10 is formed in the area AE where the wiring 19 and the electrode pad 20 are provided.
- the capacitance reducing layer 10 can greatly suppress the noise, and the noise level is improved, and the power consumption of the drive circuit and the detection circuit connected to the inertial force sensor 12 can be suppressed.
- FIG. 5A is a SEM photograph of a cross section taken along line 5A-5A of inertial force sensor 12 shown in FIG. 3 taken by a scanning electron microscope (SEM).
- the thickness W1 of the capacitance reducing layer 10 is equal to or less than the thickness W2 of the upper electrode layer 11, and more preferably smaller than the thickness W2 of the upper electrode layer 11.
- the step portion 11F of the upper electrode layer 11 formed by the boundary AC between the portion where the capacitance reducing layer 10 is formed in the region AD and the portion where the capacitance reducing layer 10 is not formed in the region AE is smoothly continuous.
- FIG. 5B is a cross-sectional view taken along line 5A-5A of inertial force sensor 12 shown in FIG.
- the value of the capacitance reducing layer 10 is set so that the value ⁇ 1 / W1 of dividing the dielectric constant ⁇ 1 of the capacity reducing layer 10 by the thickness W1 is 5% or less of the value ⁇ 2 / W2 of dividing the dielectric constant ⁇ 2 of the piezoelectric layer 9 by the thickness W2.
- the capacity reduction effect can be secured.
- FIG. 6 is a cross-sectional view of still another inertial force sensor 106 according to the first embodiment.
- the inertial force sensor 106 shown in FIG. 6 includes a capacitance reducing layer 110 made of the same material as the capacitance reducing layer 10, instead of the capacitance reducing layer 10 of the inertial force sensor 6 shown in FIG. 1A.
- the capacitance reducing layer 110 of the inertial force sensor 106 shown in FIG. 6 is connected to the lower surface 110B located on the upper surface 9A of the piezoelectric layer 9, the upper surface 110A located on the lower surface 11B of the upper electrode layer 11, and the upper surface 110A and the lower surface 110B. It has the side 110C and 110D located on the opposite side.
- the upper electrode layer 11 covers not only the upper surface 110A of the capacitance reducing layer 110 but also the side surfaces 110C and 110D.
- the piezoelectric layer 9 and the upper electrode layer 11 entirely cover the capacitance reducing layer 110 so that the capacitance reducing layer 110 is not exposed from the piezoelectric layer 9 and the upper electrode layer 11.
- the side surface of the capacitance reducing layer 10 is exposed from the piezoelectric layer 9 and the upper electrode layer 11.
- the capacity reduction layer 10 can be protected in the step S104 and subsequent steps of the manufacturing process of the inertial force sensor 6 shown in FIG. 2A.
- step S107 when patterning the piezoelectric layer 9, the lower electrode layer 8, and the substrate 7, these layers are etched with an etchant such as an etchant or an etching gas. If the side surface of the capacitance reducing layer 10 is exposed, the etching agent may be damaged during this etching, and its own characteristics and the adhesion to the piezoelectric layer 9 and the upper electrode layer 11 may be impaired.
- the side surfaces 110C and 110D of the capacitance reducing layer 110 are covered with the upper electrode layer 11, and the capacitance reducing layer 110 is entirely covered without being exposed from the upper electrode layer 11 and the piezoelectric layer 9. Therefore, the capacity reducing layer 110 is not damaged even by the etchant used in step S107 shown in FIG. 2A. As a result, it is possible to prevent the deterioration of the characteristics of the capacitance reducing layer 110 and the deterioration of the adhesion to the piezoelectric layer 9 and the upper electrode layer 11.
- FIG. 7 is a top view of still another inertial force sensor 112 according to the first embodiment.
- FIG. 8A is a cross-sectional view of inertial force sensor 112 shown in FIG. 7 taken along line 8A-8A.
- FIG. 8B is a cross-sectional view of inertial force sensor 112 shown in FIG. 7 taken along line 8B-8B.
- the same parts as those of the inertial force sensor 12 shown in FIGS. 3, 4A and 4B are denoted by the same reference numerals.
- the inertial force sensor 112 shown in FIGS. 7 to 8B includes a capacitance reducing layer 110 shown in FIG. 6 instead of the capacitance reducing layer 10 of the inertial force sensor 12 shown in FIGS. 3 to 4B. That is, the wire 19 and the electrode pad 20 in the region AE have the capacitance reducing layer 110 provided on the upper surface of the piezoelectric layer 9.
- the upper surface 110 A and the side surfaces 110 C and 110 D of the capacitance reducing layer 110 are covered with the upper electrode layer 11.
- the upper electrode layer 11 and the piezoelectric layer 9 entirely cover the capacitance reducing layer 110 so that the capacitance reducing layer 110 is not exposed.
- the inertial force sensor 6 (12, 106, 112, 206) includes the base 7 and the transducers (drive electrode 16, detection electrode 17, monitor electrode 18 provided on the base 7). And a wire 19 provided on the base 7 and connected to the transducer.
- Wiring 19 includes lower electrode layer 8 formed on the upper surface of substrate 7, piezoelectric layer 9 formed on the upper surface of lower electrode layer 8, and insulating capacity reducing layer 10 formed on the upper surface of piezoelectric layer 9 ( 110, 210) and the upper electrode layer 11 formed on the upper surface of the capacitance reducing layer 10 (110, 219).
- the relative permittivity of the capacitance reducing layer 10 (110, 210) is smaller than the relative permittivity of the piezoelectric layer 9.
- the piezoelectric layer 9 and the upper electrode layer 11 are entirely covered so as not to expose the capacitance reducing layer 110.
- the capacitance reducing layer 110 has a lower surface 110 B located on the upper surface 9 A of the piezoelectric layer 9.
- the capacitance reducing layer 110 has a side surface 110C (110D) connected to the upper surface 110A and the lower surface 110B.
- the upper electrode layer 11 covers the top surface 110A and the side surface 110C (110D) of the capacitance reducing layer 110.
- the transducers (drive electrode 16, detection electrode 17, monitor electrode 18) have lower electrode layer 8 formed on the upper surface of substrate 7, piezoelectric layer 9 formed on the upper surface of lower electrode layer 8, and the upper surface of piezoelectric layer 9. And the upper electrode layer 11 formed on the The lower electrode layer 8 of the transducer extends continuously to the lower electrode layer 8 of the wire 19.
- the piezoelectric layer 9 of the transducer extends continuously to the piezoelectric layer 9 of the wire 19.
- the upper electrode layer 11 of the transducer extends continuously to the upper electrode layer 11 of the wiring 19.
- the transducer detects the stress applied to the substrate 7.
- Another transducer drives the base 7 to vibrate.
- FIG. 9 is a top view of the inertial force sensor 21 according to the second embodiment of the present invention.
- Inertial force sensor 21 has a shape different from that of inertial force sensor 12 in the first embodiment shown in FIG.
- the inertial force sensor 21 includes two supporting portions 22, two longitudinal beams 23 whose both ends are connected to the two supporting portions 22, and a transverse beam whose both ends are connected to the two longitudinal beams 23. 24, an approximately J-shaped arm 25 whose one end is connected to the cross beam 24, and a weight 50 connected to the other end of the arm 25.
- the two support portions 22 extend in parallel to the X-axis direction. Further, on the arm 25, a drive electrode 26, a detection electrode 27, and a monitor electrode 28 are provided.
- a detection electrode 29 is provided on the cross beam 24.
- a detection electrode 30 is provided on the vertical beam 23.
- an electrode pad 31 is provided on the support portion 22 and is electrically connected to the drive electrode 26, the detection electrodes 27, 29 and 30, and the monitor electrode 28 by a wire 121.
- the drive electrode 26 and the monitor electrode 28 are connected to the drive circuit via the wire 121 and the electrode pad 31.
- the drive electrode 26, the monitor electrode 28, and the drive circuit constitute a drive loop.
- a drive signal is applied from the drive circuit to the drive electrode 26 via the electrode pad 31 and the wiring 121, the arm 25 vibrates in the XY plane.
- the arm 25 is bent in the Y-axis direction by the Coriolis force generated by the angular velocity, and a charge is generated in the detection electrode 27.
- the Coriolis force generated by the angular velocity causes the arm 25 to bend in the Z axis direction.
- a charge is generated.
- the angular velocity around the Y axis is applied while the arm 25 vibrates in the XY plane, the angular velocity causes the arm 25 to bend in the Z axial direction by the Coriolis force, and charge is generated in the detection electrode 30.
- a current due to the charges generated in the detection electrodes 27, 29, 30 is sent to the detection circuit via the wiring 121 and the electrode pad 31.
- the detection circuit can detect the angular velocity around the X axis, the angular velocity around the Y axis, and the angular velocity around the Z axis based on the sent current.
- the drive electrode 26, the detection electrodes 27, 29, 30 and the monitor electrode 28 do not have the capacitance reduction layer 10 shown in FIG. 1A or the capacitance reduction layer 110 shown in FIG.
- the wiring 121 and the electrode pad 31 are provided with the capacitance reducing layer 10 or the capacitance reducing layer 110. With this configuration, the capacitance of the wiring 121 and the electrode pad 31 can be reduced. That is, by forming the capacitance reducing layer 10 or the capacitance reducing layer 110 in a portion which does not contribute to the characteristics as the inertial force sensor 21, the noise level is improved and the consumption of the drive circuit or detection circuit connected to the inertial force sensor 21. Power can be reduced.
- FIG. 10 is a top view of the inertial force sensor 32 according to the third embodiment of the present invention.
- the inertial force sensor 32 functions as an acceleration sensor that detects an acceleration.
- the inertial force sensor 32 includes a support 33, a weight 34, a central support beam 35 connecting the support 33 and the weight 34, and a vibrating beam 36.
- a drive electrode 37 and a detection electrode 38 are formed on the vibrating beam 36.
- the drive electrode 37 and the detection electrode 38 are electrically connected to the electrode pad 40 by a wire 39.
- the inertial force sensor 32 is connected to the drive circuit via the drive electrode 37, and the drive electrode 37 and the drive circuit form a drive loop.
- the drive beam is supplied from the drive circuit to the drive electrode 37 through the electrode pad 40 and the wiring 39, whereby the vibrating beam 36 vibrates in the Z-axis direction.
- tensile stress and compressive stress are respectively applied to the vibrating beams 36 disposed on opposite sides of the central support beam 35.
- the resonance frequency of the vibrating beam 36 is changed by the applied stress, and the change can be detected by the detection electrode 38 disposed on the vibrating beam 36 to detect the acceleration.
- the drive electrode 37 and the detection electrode 38 do not have the capacitance reduction layers 10 and 110.
- the capacitance reducing layer 10 or the capacitance reducing layer 110 is provided on other portions of the drive electrode 37 and the detection electrode 38, for example, the wiring 39 and the electrode pad 40. With this configuration, the capacitance of the wiring 39 and the electrode pad 40 can be reduced. That is, by forming capacitance reducing layers 10 and 110 in portions not contributing to the characteristics as inertial force sensor 32, noise level is improved and power consumption of the drive circuit or detection circuit connected to inertial force sensor 32 is suppressed. can do.
- the inertial force sensor in the first to third embodiments functions as an angular velocity sensor and an acceleration sensor.
- the electrode capacitance can be reduced, so the noise level can be improved and the power consumption of the circuit connected to the inertial force sensor Can be suppressed.
- the terms indicating directions such as “upper surface” and “lower surface” are relative only depending on the relative positional relationship of the component parts of the inertial force sensor such as the base 7 and the capacitance reduction layer 10. It indicates the direction, and does not indicate the absolute direction such as the vertical direction.
- the inertial force sensor according to the present invention can improve the noise level, and thus is useful in portable terminals, vehicles, and the like.
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Abstract
Description
図1Aは、本発明の実施の形態1における慣性力センサ6の断面図である。加速度や角速度等の慣性力を検知する慣性力センサ6は、配線が形成された領域を有する。この領域は、基体7と、基体7の上面に形成された下部電極層8と、下部電極層8の上面に形成された圧電層9と、圧電層9の上面に形成された容量低減層10と、容量低減層10の上面に形成された上部電極層11とを備えている。容量低減層10の比誘電率は、圧電層9の比誘電率よりも小さい。
容量低減層10の比誘電率は圧電層9の比誘電率の約0.3%しかないので、これら2つの層で合成容量を形成した場合、膜厚の違いが多少あったとしても、容量CTotalは容量低減層10のみによる部分の容量CPEに近づく。例えば、容量低減層10の厚みが圧電層9の厚みの1/5である場合には、容量CTotalは圧電層9のみによる容量CPEの1%程度になる。このように、上部電極層11と圧電層9との間に誘電率の低い材料よりなる容量低減層10を設けることにより、上部電極層11と下部電極層8との間の容量を大きく低減させることができる。
図9は本発明の実施の形態2における慣性力センサ21の上面図である。慣性力センサ21は図3に示す実施の形態1における慣性力センサ12と異なる形状を有する。図9に示すように、慣性力センサ21は、2つの支持部22と、2つの支持部22に両端が接続された2つの縦梁23と、2つの縦梁23に両端が接続された横梁24と、横梁24に一端が接続された略J字状のアーム25と、アーム25の他端に接続された錘50とを備えている。2つの支持部22はX軸方向に平行に延びている。また、アーム25の上には駆動電極26と、検出電極27と、モニタ電極28が設けられている。横梁24の上に検出電極29が設けられている。縦梁23の上に検出電極30が設けられている。また、支持部22の上に電極パッド31が設けられており、それぞれ駆動電極26、検出電極27、29、30及びモニタ電極28と配線121により電気的に接続されている。
図10は本発明の実施の形態3における慣性力センサ32の上面図である。慣性力センサ32は加速度を検出する加速度センサとして機能する。慣性力センサ32は、支持部33と、錘部34と、支持部33と錘部34とを連結する中央支持梁35と、振動梁36とを備える。振動梁36には駆動電極37および検出電極38が形成されている。駆動電極37および検出電極38は配線39により電気的に電極パッド40に接続されている。
7 基体
8 下部電極層(第1の下部電極層、第2の下部電極層)
9 圧電層(第1の圧電層、第2の圧電層)
10 容量低減層
11 上部電極層(第1の上部電極層、第2の上部電極層)
16 駆動電極(トランスデューサ)
17 検出電極(トランスデューサ)
18 モニタ電極(トランスデューサ)
19 配線
110 容量低減層
Claims (13)
- 基体と、
前記基体に設けられたトランスデューサと、
前記基体に設けられて、前記トランスデューサに接続された配線と、
を備え、
前記配線は、
前記基体の上面に形成された第1の下部電極層と、
前記第1の下部電極層の上面に形成された第1の圧電層と、
前記第1の圧電層の上面に形成された容量低減層と、
前記容量低減層の上面に形成された第1の上部電極層と、
を有し、
前記容量低減層の比誘電率は前記第1の圧電層の比誘電率よりも小さい、慣性力センサ。 - 前記第1の圧電層と前記第1の上部電極層とは前記容量低減層を露出させないように全体的に覆う、請求項1に記載の慣性力センサ。
- 前記容量低減層は、前記第1の圧電層の前記上面に位置する下面を有し、
前記容量低減層は、前記容量低減層の前記上面と前記下面とに繋がる側面を有し、
前記第1の上部電極層は前記容量低減層の前記上面と前記側面とを覆う、請求項1に記載の慣性力センサ。 - 前記容量低減層の厚みは前記第1の上部電極層の厚み以下である、請求項1に記載の慣性力センサ。
- 前記容量低減層の誘電率は前記第1の圧電層の誘電率の5%以下である、請求項1に記載の慣性力センサ。
- 前記容量低減層は感光性の有機材料からなる、請求項1に記載の慣性力センサ。
- 前記容量低減層は感光性ポリイミドからなる、請求項1に記載の慣性力センサ。
- 前記容量低減層はアルカリ現像型の感光性ポリイミドからなる、請求項1に記載の慣性力センサ。
- 前記容量低減層のキュア温度は前記第1の圧電層のキュリー温度よりも低い、請求項1に記載の慣性力センサ。
- 前記トランスデューサは、
前記基体の前記上面に形成された第2の下部電極層と、
前記第2の下部電極層の上面に形成された第2の圧電層と、
前記第2の圧電層の上面に形成された第2の上部電極層と、
を有する、請求項1に記載の慣性力センサ。 - 前記第2の下部電極層は前記第1の下部電極層に連続して延びており、
前記第2の圧電層は前記第1の圧電層に連続して延びており、
前記第2の上部電極層は前記第1の上部電極層に連続して延びている、請求項10に記載の慣性力センサ。 - 前記トランスデューサは、前記基体に印加された応力を検出する、請求項1に記載の慣性力センサ。
- 前記トランスデューサは前記基体を駆動して振動させる、請求項1に記載の慣性力センサ。
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US13/822,244 US20130160548A1 (en) | 2010-11-18 | 2011-11-07 | Inertial force sensor |
JP2012544092A JP5903667B2 (ja) | 2010-11-18 | 2011-11-07 | 慣性力センサ |
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