WO2012057330A1 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- WO2012057330A1 WO2012057330A1 PCT/JP2011/074960 JP2011074960W WO2012057330A1 WO 2012057330 A1 WO2012057330 A1 WO 2012057330A1 JP 2011074960 W JP2011074960 W JP 2011074960W WO 2012057330 A1 WO2012057330 A1 WO 2012057330A1
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- emitting element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
Definitions
- the present invention relates to a light emitting device.
- a light emitting element composed of a light emitting diode (LED) that emits blue light and a phosphor that emits yellow light when excited by receiving the light from the light emitting element are mixed.
- LED light emitting diode
- a light emitting device that emits light is known (see, for example, Patent Document 1).
- the light-emitting device described in Patent Document 1 includes a granular phosphor contained in an epoxy resin and arranged around a light-emitting element that emits blue light.
- the light emitted from the light-emitting element itself and yellow light emitted from the phosphor Is configured to emit white light.
- the binder such as an epoxy resin for fixing the granular phosphor
- the light transmittance is lowered and the light emission efficiency is lowered. Resulting in.
- the smaller the particle size the larger the surface area of the phosphor relative to the volume of the phosphor. It is easily affected by the external environment, and the non-light emitting region is relatively large due to the non-uniform composition and low crystallinity near the surface. It will decline.
- an object of the present invention is to provide a light emitting device capable of suppressing a decrease in light emission efficiency due to long-term use as compared with a case where a granular phosphor is used.
- a light-emitting device including a light-emitting element that emits blue light and a phosphor made of a single single crystal that emits yellow light using the light from the light-emitting element as excitation light.
- the phosphor, Y 3-xy Gd x M y L V N 5-V O 12-w (L is at least one element selected Sc, from Lu, M is, Ce, Tb, One or more elements selected from the group consisting of Eu, Yb, Pr, Tm, Sm, Nd, Dy, Ho, Er, and N is at least one element selected from the group consisting of Ga, In, Al
- FIG. 1A is a cross-sectional view of a light emitting device 1 according to a first embodiment of the present invention.
- FIG. 1B is a cross-sectional view of the light-emitting element 10 constituting the light-emitting device 1 shown in FIG. 1A and its peripheral portion.
- a light emitting device 1 includes a light emitting element 10 made of an LED, a phosphor 2 made of a single single crystal provided so as to cover a light emitting surface of the light emitting element 10, and the light emitting element 10. It comprises a ceramic substrate 3 such as Al 2 O 3 to be supported, a main body 4 made of white resin, and a transparent resin 8 that seals the light emitting element 10 and the phosphor 2.
- the ceramic substrate 3 has wiring portions 31 and 32 patterned with a metal such as tungsten.
- the wiring portions 31 and 32 are electrically connected to the n-side electrode 15A and the p-side electrode 15B (described later) of the light emitting element 10.
- the main body 4 is formed on the ceramic substrate 3, and an opening 4A is formed at the center thereof.
- the opening 4A is formed in a taper shape in which the opening width gradually increases from the ceramic substrate 3 side toward the outside.
- the inner surface of the opening 4A is a reflecting surface 40 that reflects the light emitted from the light emitting element 10 toward the outside.
- the light emitting element 10 is mounted on the ceramic substrate 3 with the n-side electrode 15 ⁇ / b> A and the p-side electrode 15 ⁇ / b> B connected to the wiring portions 31 and 32 of the ceramic substrate 3 by bumps 16 and 16. .
- the light-emitting element 10 is, for example, a flip chip type using a GaN-based semiconductor compound, and emits blue light having a light amount peak at a wavelength of, for example, 380 to 490 nm.
- an n-type GaN layer 12, a light emitting layer 13, and a p-type GaN layer 14 are formed in this order on a first main surface 11a of an element substrate 11 made of sapphire or the like.
- An n-side electrode 15A is formed on the exposed portion of the n-type GaN layer 12, and a p-side electrode 15B is formed on the surface of the p-type GaN layer 14, respectively.
- the light emitting layer 13 emits blue light when carriers are injected from the n-type GaN layer 12 and the p-type GaN layer 14.
- the emitted light passes through the n-type GaN layer 12 and the element substrate 11 and is emitted from the second main surface 11 b of the element substrate 11. That is, the second main surface 11 b of the element substrate 11 is a light emitting surface of the light emitting element 10.
- the phosphor 2 is arranged on the second main surface 11b side of the element substrate 11 so as to cover the entire second main surface 11b.
- the entire phosphor 2 has a flat plate shape made of a single single crystal.
- the single single crystal means one having a size equal to or larger than that of the second main surface 11b and being substantially regarded as one single crystal as a whole.
- the phosphor 2 is in direct contact with the element substrate 11 without interposing another member between the first surface 2a facing the element substrate 11 and the second main surface 11b of the element substrate 11. Yes.
- the phosphor 2 and the element substrate 11 are bonded by intermolecular force.
- the phosphor 2 is made of a YAG (yttrium, aluminum, garnet) phosphor. More specifically, the phosphor 2, the Y 3 Al 5 O 12 as a base, Y 3-xy L x M y Al 5-Z N Z O 12-w (L is, Gd or Lu, M is One or more elements selected from the group consisting of Ce, Tb, Eu, Yb, Pr, Tm, and Sm, N is Ga or In, 0 ⁇ x ⁇ 3, 0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 5 , ⁇ 0.2 ⁇ w ⁇ 0.2).
- L is a component that does not serve as an emission center for replacing Y.
- M is a component (activator) that can serve as a luminescent center for substituting Y.
- N is a component that substitutes for Al.
- the phosphor 2 may be a TSLAG (terbium / scandium / lutetium / aluminum / garnet) phosphor. More specifically, Tb 3 (Sc, Lu) and 2 Al 3 O 12 as a base, Tb 3-x - y Gd x M y (Sc, Lu) 2-Z Al 3-W N Z + W O 12 -V (M is one or more elements selected from the group consisting of Ce, Eu, Yb, Pr, Tm, Sm, N is Ga or In, 0 ⁇ x ⁇ 3, 0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 2, 0 ⁇ w ⁇ 3, ⁇ 0.2 ⁇ v ⁇ 0.2).
- M is a component (activator) that can be a luminescent center that substitutes for Tb.
- N is a component that substitutes for Al, Sc, or Lu.
- z is 0.5 ⁇ z ⁇ 2, it is easier to suppress the formation of defects such as cracks during single crystal production, which is more preferable.
- the phosphor 2, Tb 3-xy Gd x M y Al 5-Zv (Sc, Lu) v N Z O 12-w (L is, Gd or Lu, M is, Ce, Tb, Eu, Yb,
- One or more elements selected from the group consisting of Pr, Tm, Sm, N is Ga or In, 0 ⁇ x ⁇ 3, 0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 5, 0 ⁇ v ⁇ 2, ⁇
- a phosphor having a composition represented by 0.2 ⁇ w ⁇ 0.2) may be used.
- the concentration of the activator represented by y is preferably 0.003 or more and 0.2 or less, and 0.01 or more and 0.2 or less. It is more desirable. By setting the activator concentration within this range, the thickness t of the phosphor 2 can be set within a suitable range, and concentration quenching can be suppressed.
- the phosphor 2, Tb 3-xy Gd x M y (Sc, Lu) v N 5-v O 12-w M is, Ce, Eu, Yb, Pr , Tm, Sm, Nd, Dy, Ho , Er, at least one element selected from the group consisting of Er, N is at least one element selected from the group consisting of Ga, In, Al, 0 ⁇ x ⁇ 3, 0 ⁇ y ⁇ 1,
- a phosphor having a composition represented by 0 ⁇ v ⁇ 5 and ⁇ 0.2 ⁇ w ⁇ 0.2) may be used.
- v is 0.5 ⁇ v ⁇ 2
- formation of defects such as cracks during the production of a single crystal can be easily suppressed, which is more preferable.
- the phosphor 2, Y 3-xy Gd x M y L v N 5-v O 12-w (L is one or more elements selected Sc, from Lu, M is, Ce, Tb, Eu, At least one element selected from the group consisting of Yb, Pr, Tm, Sm, Nd, Dy, Ho, Er, and N is at least one element selected from the group consisting of Ga, In, Al , 0 ⁇ x ⁇ 3, 0 ⁇ y ⁇ 1, 0 ⁇ v ⁇ 5, ⁇ 0.2 ⁇ w ⁇ 0.2).
- v is 0.5 ⁇ v ⁇ 2
- formation of defects such as cracks during the production of a single crystal can be easily suppressed, which is more preferable.
- composition of the phosphor 2 described above some atoms may occupy different positions on the crystal structure.
- the concentration of the activator represented by y is preferably 0.003 or more and 0.2 or less. This is because when the concentration of the activator is less than 0.003, the thickness t of the phosphor 2 necessary for obtaining the necessary fluorescence increases (for example, t> 3 mm), so that the number of phosphors 2 taken decreases. It is because it ends. Further, if the concentration of the activator exceeds 0.2, it is necessary to make the phosphor 2 thin (for example, t ⁇ 0.1 mm). This is because chipping or the like easily occurs and concentration quenching can occur.
- Concentration quenching refers to the intensity of the fluorescence depending on the concentration of the activator due to the fact that energy transfer between adjacent molecules occurs and the original energy is not sufficiently emitted as fluorescence (non-luminescent transition). This is a phenomenon that does not increase.
- the concentration of the activator represented by y is 0.01 or more and 0.2 or less.
- the phosphor 2 can have an appropriate thickness (for example, t ⁇ 2 mm). That is, the thickness t (mm) of the phosphor 2 is preferably 0.1 ⁇ t ⁇ 3.0, and more preferably 0.1 ⁇ t ⁇ 2.0.
- the phosphor 2 is formed by a liquid phase growth method such as a CZ method (Czochralski Method), an EFG method (Edge Defined Film Fed Growth Method), an FZ method (Floating Zone Method), a CVD method (Chemical Vapor Deposition Method), or the like. It can be obtained by a phase growth method or a solid phase reaction of a sintered body.
- a CZ method for example, a YAG single crystal is manufactured by pulling up a seed crystal at a growth rate of 1 mm / h in the ⁇ 111> direction in a nitrogen gas atmosphere, and this is used as the second substrate of the element substrate 11 of the light emitting element 10.
- the phosphor 2 can be created by cutting out to a size corresponding to the main surface 11b (light emitting surface) of the light source.
- FIG. 2 is a schematic diagram showing a manufacturing process for manufacturing a YAG single crystal by the CZ method together with a cross-sectional view of a crystal growth apparatus.
- the crystal growth apparatus 80 includes an iridium crucible 81, a ceramic cylindrical container 82 that houses the crucible 81, and a high-frequency coil 83 that is wound around the cylindrical container 82. Mainly prepared.
- the high frequency coil 83 generates an induced current in the crucible 81 and heats the crucible 81.
- a YAG single crystal is obtained, for example, as follows using the crystal growth apparatus 80. First, Y 2 O 3 powder (purity 99.99%), Al 2 O 3 powder (purity 99.99%), Gd 2 O 3 powder (purity 99.99%), and CeO 2 powder (purity 99.99%). %) Is prepared, and these powders are dry-mixed to obtain a mixed powder.
- the blending ratios of Gd 2 O 3 powder and CeO 2 powder are, for example, 36.6 mol%, 62.3 mol%, 0.363 mol%, and 0.737 mol%, respectively.
- the mixed powder is packed in a cylindrical crucible 81 having a diameter of 50 mm and a depth of 50 mm.
- an electric current is applied to the high-frequency coil 83 to heat the crucible 81 and melt the mixed powder to obtain a melt 90.
- a 3 ⁇ 3 ⁇ 70 mm square bar-shaped seed crystal 91 made of YAG (yttrium, aluminium, garnet) was prepared, and the seed crystal 91 was immersed in the melt 90, and then the seed crystal 91 was placed at 10 rpm. It is pulled up at a pulling speed of 1 mm per hour while rotating at a rotation speed of.
- the light emitting element 10 When the light emitting element 10 configured as described above is energized, electrons are injected into the light emitting layer 13 through the wiring portion 31, the n-side electrode 15A, and the n-type GaN layer 12, and the wiring portion 32 and the p-side electrode 15B. Then, holes are injected into the light emitting layer 13 through the p-type GaN layer 14, and the light emitting layer 13 emits light.
- the blue emitted light of the light emitting layer 13 passes through the n-type GaN layer 12 and the element substrate 11, is emitted from the second main surface 11 b of the element substrate 11, and enters the first surface 2 a of the phosphor 2.
- the phosphor 2 absorbs part of the blue light from the light emitting element 10 and converts the absorbed light into yellow light having a light intensity peak at a wavelength of, for example, 500 to 630 nm.
- a part of the blue light incident on the phosphor 2 is absorbed by the phosphor 2 and converted in wavelength, and is emitted from the second surface 2b of the phosphor 2 as yellow light. Further, the remaining part of the light incident on the phosphor 2 is not absorbed by the phosphor 2 and is emitted from the second surface 2 b of the phosphor 2. Since blue and yellow are in a complementary color relationship, the light emitting device 1 emits white light in which blue light and yellow light are mixed.
- the color temperature of the white light emitted from the light emitting device 1 is desirably 3800 to 7000K.
- a more preferable color temperature of white light of the light emitting device 1 is 4000 to 5500K.
- the color temperature of white light can be adjusted by the activator concentration and thickness of the phosphor 2.
- a YAG single crystal is used as the phosphor, blue light can be efficiently absorbed to emit yellow light, and white light can be efficiently obtained.
- the activator concentration of the phosphor 2 is set to 0.003 or more and 0.2 or less, more preferably 0.01 or more and 0.2 or less, the thickness of the phosphor 2 is suitable for processing and assembly. The thickness can be reduced and concentration quenching can be suppressed.
- FIGS. 3A to 3C are cross-sectional views of the light-emitting device 1A according to the present embodiment
- FIG. 3B is a cross-sectional view of the light-emitting element 10A constituting the light-emitting device 1A and its periphery
- FIG. 3C is a plan view of the light-emitting element 10A. .
- the light-emitting device 1A according to the present embodiment is common in the light-emitting device 1 according to the first embodiment with a configuration in which the light emitted from the light-emitting element is incident on a phosphor made of a single single crystal to convert the wavelength.
- the configuration of the light emitting element and the arrangement position of the phosphor with respect to the light emitting element are different from those of the first embodiment.
- the constituent elements of the light emitting device 1A having the same functions and configurations as those described in the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
- the light-emitting device 1A is arranged so that the element substrate 11 of the light-emitting element 10A faces the ceramic substrate 3 side. Further, a phosphor 21 made of a single single crystal of YAG system is joined to the opening 4A side of the light emitting element 10A. Also. As the phosphor 21, those having the respective compositions described in the first embodiment can be used.
- the light-emitting element 10A includes an element substrate 11, an n-type GaN layer 12, a light-emitting layer 13, and a p-type GaN layer 14, and ITO (Indium) on the p-type GaN layer 14. It has a transparent electrode 140 made of Tin Oxide. A p-side electrode 15B is formed on the transparent electrode 140. The transparent electrode 140 diffuses the carriers injected from the p-side electrode 15B and injects them into the p-type GaN layer 14.
- the phosphor 21 is formed in a substantially square shape having a notch in a portion corresponding to the p-side electrode 15B and the n-side electrode 15A formed on the n-type GaN layer 12. Further, in the phosphor 21, the first surface 21 a on the transparent electrode 140 side is bonded to the surface 140 b of the transparent electrode 140 by intermolecular force.
- the composition of the phosphor 21 is the same as the composition of the phosphor 2 in the first embodiment.
- the n-side electrode 15A of the light emitting element 10A is connected to the wiring portion 31 of the ceramic substrate 3 by a bonding wire 311. Further, the p-side electrode 15 ⁇ / b> B of the light emitting element 10 ⁇ / b> A is connected to the wiring part 32 of the ceramic substrate 3 by a bonding wire 321.
- the light emitting element 10A configured as described above When the light emitting element 10A configured as described above is energized, electrons are injected into the light emitting layer 13 through the wiring portion 31, the n-side electrode 15A, and the n-type GaN layer 12, and the wiring portion 32 and the p-side electrode 15B. Then, holes are injected into the light emitting layer 13 through the transparent electrode 140 and the p-type GaN layer 14, and the light emitting layer 13 emits light.
- Blue light emitted from the light emitting layer 13 is transmitted through the p-type GaN layer 14 and the transparent electrode 140 and is emitted from the surface 140 b of the transparent electrode 140. That is, the surface 140b of the transparent electrode 140 is a light emitting surface of the light emitting element 10A. The light emitted from the surface 140 b of the transparent electrode 140 is incident on the first surface 21 a of the phosphor 21.
- the phosphor 21 absorbs part of the blue light from the light emitting element 10A, and wavelength-converts the absorbed light into mainly yellow light. More specifically, the phosphor 21 is excited by blue light having a light intensity peak at a wavelength of 380 to 490 nm from the light emitting element 10A and emits yellow light having a light intensity peak at a wavelength of 500 to 630 nm. To emit.
- part of the blue light incident on the phosphor 21 is absorbed by the phosphor 21 and converted in wavelength, and is emitted from the second surface 21b of the phosphor 21 as yellow light. Further, the remaining part of the blue light incident on the phosphor 21 is not absorbed by the phosphor 21 but is emitted from the second surface 21 b of the phosphor 21 as it is. Since blue and yellow are in a complementary color relationship, the light emitting device 1A emits white light in which blue light and yellow light are mixed.
- FIG. 4 is a cross-sectional view of the light emitting device 1B according to the present embodiment.
- the light-emitting device 1B according to the present embodiment is common in the light-emitting device 1 according to the first embodiment with a configuration in which the light emitted from the light-emitting element is incident on a phosphor made of a single single crystal to convert the wavelength.
- the arrangement position of the phosphor is different from that of the first embodiment.
- the constituent elements of the light emitting device 1B having the same functions and configurations as those described in the first or second embodiment are denoted by the same reference numerals, and description thereof is omitted.
- the light-emitting device 1B includes a light-emitting element 10 having the same configuration as that of the first embodiment on a ceramic substrate 3.
- the light emitting element 10 emits blue light from the second main surface 11b of the element substrate 11 (see FIG. 1B) located on the opening 4A side of the main body 4 toward the opening 4A side of the main body 4.
- the phosphor 22 is joined to the main body 4 so as to cover the opening 4A.
- the phosphor 22 is formed in a flat plate shape, and is bonded to the upper surface 4b of the main body 4 with an adhesive or the like.
- the phosphor 22 those having the respective compositions described in the first embodiment can be used.
- the phosphor 22 is larger than the light emitting element 10 and is substantially a single crystal as a whole.
- the light emitting element 10 When the light emitting device 1B configured as described above is energized, the light emitting element 10 emits light and emits blue light from the second main surface 11b toward the phosphor 22.
- the phosphor 22 receives blue light emitted from the light emitting element 10 from the first surface 22a facing the emission surface of the light emitting element 10, and emits yellow light excited by the emitted light from the second surface 22b to the outside. Radiate.
- the light emitting device 1B emits white light in which blue light and yellow light are mixed.
- the same operation and effect as described in the first embodiment can be obtained. Further, since the light emitting element 10 and the phosphor 22 are separated from each other, the large phosphor 22 can be used as compared with the case where the phosphor is bonded to the emission surface of the light emitting element 10, and the light emitting device 1B is assembled. The ease of is increased.
- FIG. 5 is a cross-sectional view of the light emitting device 1C according to the present embodiment.
- the positional relationship between the light emitting element, the substrate on which the light emitting element is mounted, and the phosphor is different from that in the third embodiment.
- the constituent elements of the light emitting device 1C having the same functions and configurations as those described in the first, second, or third embodiment are denoted by the same reference numerals, and description thereof is omitted.
- the light emitting device 1C covers the main body 5 made of white resin, the transparent substrate 6 held by the slit-like holding portion 51 formed in the main body 5, and the opening 5A of the main body 5.
- the phosphor 22 made of a single YAG-based single crystal, the light emitting element 10A mounted on the surface of the transparent substrate 6 opposite to the surface on the phosphor 22 side, and the light emitting element 10A. Wiring portions 61 and 62.
- the composition of the phosphor 22 is the same as that of the phosphor 2 according to the first embodiment.
- the main body 5 has a concave portion on the curved surface at the center, and the surface of the concave portion serves as a reflecting surface 50 that reflects the light emitted from the light emitting element 10A toward the phosphor 220.
- the transparent substrate 6 is made of, for example, a resin having translucency such as a silicone resin, an acrylic resin, or PET, or a translucent member made of a single crystal or polycrystal such as a glassy substance, sapphire, ceramics, quartz, etc. It has translucency and insulation properties to transmit 10A emission light.
- a part of the wiring portions 61 and 62 is bonded to the transparent substrate 6.
- the p-side electrode and the n-side electrode of the light emitting element 10 ⁇ / b> A and one end portions of the wiring portions 61 and 62 are electrically connected by bonding wires 611 and 612.
- the other end portions of the wiring portions 61 and 62 are drawn out of the main body 5.
- the light emitting element 10A When the light emitting device 1C configured as described above is energized, the light emitting element 10A emits light, and part of the emitted light passes through the transparent substrate 6 and enters the first surface 22a of the phosphor 22. Further, another part of the light emitting element 10 ⁇ / b> A is reflected by the reflection surface 50 of the main body 5, passes through the transparent substrate 6, and enters the first surface 22 a of the phosphor 22.
- the light emitting device 1C emits white light in which the blue light emitted from the light emitting element 10A and the yellow light wavelength-converted by the phosphor 22 are mixed.
- This modification also has the same effect as the effect of the third embodiment described above. Further, the light emitted from the light emitting element 10A to the side opposite to the phosphor 220 side is reflected by the reflecting surface 50, passes through the transparent substrate 6, and enters the phosphor 220, so that the light extraction efficiency of the light emitting device 1C is high. Become.
- FIGS. 6A and 6B are cross-sectional views of the light-emitting device 1D according to the present embodiment
- FIG. 6B is a cross-sectional view of the light-emitting element 7 constituting the light-emitting device 1D.
- the configuration and arrangement of the light emitting elements are different from those in the third embodiment.
- constituent elements of the light-emitting device 1D having the same functions and configurations as those described in the first, second, or third embodiment are denoted by common reference numerals, and description thereof is omitted.
- the light emitting element 7 is disposed on the wiring part 32 provided on the ceramic substrate 3.
- the light-emitting element 7 includes a Ga 2 O 3 substrate 70, a buffer layer 71, a Si-doped n + -GaN layer 72, a Si-doped n-AlGaN layer 73, and an MQW (Multiple-Quantum Well) layer.
- an Mg-doped p-AlGaN layer 75, an Mg-doped p + -GaN layer 76, and a p-electrode 77 are laminated in this order.
- An n electrode 78 is provided on the surface of the Ga 2 O 3 substrate 70 opposite to the buffer layer 71.
- the Ga 2 O 3 substrate 70 is made of ⁇ -Ga 2 O 3 exhibiting n-type conductivity.
- the MQW layer 74 is a light emitting layer having an InGaN / GaN multiple quantum well structure.
- the p electrode 77 is a transparent electrode made of ITO (Indium Tin Oxide) and is electrically connected to the wiring part 31.
- the n electrode 78 is connected to the wiring part 32 of the ceramic substrate 3 by a bonding wire 321. Note that SiC may be used as the element substrate instead of ⁇ -Ga 2 O 3 .
- the light emitting element 7 When the light emitting element 7 configured as described above is energized, electrons are transferred to the MQW layer 74 through the n electrode 78, the Ga 2 O 3 substrate 70, the buffer layer 71, the n + -GaN layer 72, and the n-AlGaN layer 73. In addition, holes are injected into the MQW layer 74 through the p electrode 77, the p + -GaN layer 76, and the p-AlGaN layer 75, and blue light is emitted. The blue light emission passes through the Ga 2 O 3 substrate 70 and the like, is emitted from the emission surface 7 a of the light emitting element 7, and enters the first surface 22 a of the phosphor 22.
- the phosphor 22 receives the blue light emitted from the light emitting element 10 from the first surface 22a facing the emission surface of the light emitting element 7, and the yellow light excited by the light emitted from the second surface 22b to the outside. Radiates to.
- the light emitting device 1D emits white light in which blue light and yellow light are mixed.
- the light emitting element and the phosphor may be sealed with a so-called bullet-type resin.
- One light-emitting device may have a plurality of light-emitting elements.
- a phosphor composed of a single single crystal that emits yellow light using the light of a light emitting element that emits blue light as excitation light, and a single single crystal that emits light of a color tone different from that of the phosphor.
- a light emitting device may be configured by combining a plurality of phosphors made of a single crystal such as a phosphor.
Abstract
Description
[4]前記蛍光体は、前記zが0.5≦z≦2である前記[3]に記載の発光装置。
本発明の第1の実施の形態について、図1A及び図1Bを参照して説明する。
図1Aは、本発明の第1の実施の形態に係る発光装置1の断面図である。図1Bは、図1Aに示す発光装置1を構成する発光素子10及びその周辺部の断面図である。
本実施の形態によれば、粒状の多数の蛍光体を結合して保持するための結合剤(バインダー)を用いる必要がないので、結合剤の劣化による発光効率の低下を抑制することができる。また、粒状の多数の蛍光体を結合した場合に比較して、蛍光体全体の表面積を小さくすることができるので、外部環境の影響による蛍光剤の特性劣化を抑制できるとともに、蛍光体の組成の均一性及び結晶性を高めることができるので、発光装置の発光効率を高めることができる。また、高出力の励起光の照射に対して、樹脂の劣化による効率の低下や蛍光体の劣化が起こりにくい効果が期待できる。
次に、本発明の第2の実施の形態について、図3A~図3Cを参照して説明する。
図3Aは、本実施の形態に係る発光装置1Aの断面図、図3Bは、発光装置1Aを構成する発光素子10A及びその周辺部の断面図、図3Cは、発光素子10Aの平面図である。
次に、本発明の第3の実施の形態について、図4を参照して説明する。
図4は、本実施の形態に係る発光装置1Bの断面図である。
次に、本発明の第4の実施の形態について、図5を参照して説明する。
図5は、本実施の形態に係る発光装置1Cの断面図である。図5に示すように、本実施の形態では、発光素子と、発光素子が実装される基板及び蛍光体との位置関係が第3の実施の形態とは異なっている。以下、第1、第2又は第3の実施の形態について説明したものと同一の機能及び構成を有する発光装置1Cの構成要素については共通する符号を付して説明を省略する。
次に、本発明の第5の実施の形態について、図6A及び図6Bを参照して説明する。
図6Aは、本実施の形態に係る発光装置1Dの断面図、図6Bは、発光装置1Dを構成する発光素子7の断面図である。図6Aに示すように、本実施の形態では、発光素子の構成及びその配置が第3の実施の形態とは異なっている。以下、第1、第2又は第3の実施の形態について説明したものと同一の機能及び構成を有する発光装置1Dの構成要素については共通する符号を付して説明を省略する。
Claims (9)
- 青色系の光を発する発光素子と、
前記発光素子の光を励起光として、黄色系の光を発する単一の単結晶からなる蛍光体と
を備えた発光装置。 - 前記蛍光体は、Y3-x-yLxMyAl5-ZNZO12-w(Lは、Gd又はLu、Mは、Ce,Tb,Eu,Yb,Pr,Tm,Smからなる群から選択される1種類以上の元素、Nは、Ga又はIn、0≦x<3、0<y≦1、0≦z≦5、-0.2≦w≦0.2)で表される組成を有する請求項1に記載の発光装置。
- 前記蛍光体は、Tb3-x―yGdxMy(Sc,Lu)2-ZAl3-WNZ+WO12-V(Mは、Ce,Eu,Yb,Pr,Tm,Smからなる群から選択される1種類以上の元素、Nは、Ga又はIn、0≦x<3、0<y≦1、0≦z<2、0<w<3、-0.2≦v≦0.2)で表される組成を有する請求項1に記載の発光装置。
- 前記蛍光体は、前記zが0.5≦z≦2である請求項3に記載の発光装置。
- 前記蛍光体は、Tb3-x-yGdxMy(Sc,Lu)vN5-vO12-w(Mは、Ce,Eu,Yb,Pr,Tm,Sm、Nd,Dy,Ho,Erからなる群より選択される少なくとも1種類以上の元素、Nは、Ga、In、Alからなる群より選択される少なくとも1種類以上の元素、0≦x<3、0<y≦1、0≦v≦5、-0.2≦w≦0.2)で表される組成を有する請求項1に記載の発光装置。
- 前記蛍光体は、Y3-x-yGdxMyLvN5-vO12-w(LはSc,Luより選択される少なくとも1種類以上の元素、Mは、Ce,Tb,Eu,Yb,Pr,Tm,Sm、Nd,Dy,Ho,Erからなる群から選択される1種類以上の元素、Nは、Ga、In、Alより選択される少なくとも1種類以上の元素、0≦x<3、0<y≦1、0≦v≦5、-0.2≦w≦0.2)で表される組成を有する請求項1に記載の発光装置。
- 前記蛍光体は、前記vが0.5≦v≦2である請求項5又は6に記載の発光装置。
- 前記蛍光体は、前記yが0.003≦y≦0.2である請求項2乃至7の何れか1項に記載の発光装置。
- 前記蛍光体は、前記yが0.01≦y≦0.2である請求項2乃至7の何れか1項に記載の発光装置。
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