WO2011162261A1 - 固浸レンズを吸着する吸着器を用いる半導体デバイスの観察方法 - Google Patents
固浸レンズを吸着する吸着器を用いる半導体デバイスの観察方法 Download PDFInfo
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- WO2011162261A1 WO2011162261A1 PCT/JP2011/064172 JP2011064172W WO2011162261A1 WO 2011162261 A1 WO2011162261 A1 WO 2011162261A1 JP 2011064172 W JP2011064172 W JP 2011064172W WO 2011162261 A1 WO2011162261 A1 WO 2011162261A1
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- semiconductor device
- light
- solid immersion
- objective lens
- suction
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Definitions
- the present invention relates to an adsorber, a semiconductor device observation apparatus, and a semiconductor device observation method.
- Patent Document 1 a substantially hemispherical solid immersion lens is integrally formed on an analysis plate for placing a semiconductor wafer on which a semiconductor device is formed.
- the semiconductor device when performing failure analysis of a semiconductor device, first, the semiconductor device is observed at a low magnification without using a solid immersion lens to detect the failure location, and then the failure location at a high magnification using a solid immersion lens. It is desirable to observe
- the present invention provides an adsorber, a semiconductor device observation apparatus, and a semiconductor device observation method that can easily change between observation at a low magnification and observation at a high magnification of a semiconductor device. Let it be an issue.
- This adsorber is an adsorber used in a semiconductor device observation apparatus that observes a semiconductor device using a solid immersion lens, and includes a first surface on which a semiconductor wafer on which a semiconductor device is formed is disposed, A main body portion having a second surface which is a surface opposite to the first surface and having a through-hole penetrating the first surface and the second surface, and light from the semiconductor device is incident thereon A light incident surface, a light emitting surface from which light incident from the light incident surface is emitted, the light incident surface is exposed on the first surface side, and the light emitting surface is on the second surface side.
- the semiconductor device is adsorbed and fixed to the light incident surface by vacuum adsorption using the first adsorption groove
- the solid immersion lens is adsorbed to the light emission surface by vacuum adsorption using the second adsorption groove.
- the suction fixing of the solid immersion lens can be released by stopping the vacuum suction using the second suction groove while fixing the semiconductor device to the light incident surface.
- the solid immersion lens can be easily attached and detached while the semiconductor device to be observed is suction fixed to the light incident surface.
- this suction device it is possible to easily change the observation of the semiconductor device at a low magnification without using the solid immersion lens and the observation of the semiconductor device at a high magnification using the solid immersion lens. In particular, it is effective in observing a semiconductor device formed on a semiconductor wafer.
- the second surface has a recess for arranging the solid immersion lens, the through hole is formed in the bottom surface of the recess, and the light exit surface is the recess. It is located so that it may protrude to the 2nd surface side rather than the bottom face of this, and the 2nd adsorption
- the bottom surface of the solid immersion lens and the bottom surface of the recess are separated (that is, the second suction groove cannot be closed). By stopping, the adsorption fixation of the solid immersion lens can be easily released.
- the light transmission portion can be made of a material having a refractive index substantially the same as the refractive index of the material constituting the substrate of the semiconductor device. In this case, it is possible to suppress aberration caused by the difference in refractive index.
- the adsorber according to one aspect of the present invention can further include a cooling means for cooling the main body.
- a cooling means for cooling the main body In this case, overheating of the semiconductor device and the solid immersion lens can be prevented. As a result, normal operation of the semiconductor device can be realized, and the refractive index of the solid immersion lens can be prevented from changing.
- This semiconductor device observation apparatus is a semiconductor device observation apparatus that observes a semiconductor device using a solid immersion lens, and the above-described adsorber, a light guide optical system that guides light transmitted through a light transmission portion, And imaging means for imaging light guided by the light guide optical system.
- this semiconductor device observation apparatus includes the above-described adsorber, it is easy to observe a semiconductor device at a low magnification without using a solid immersion lens and an observation at a semiconductor device at a high magnification using a solid immersion lens. Can be changed. In particular, it is effective in observing a semiconductor device formed on a semiconductor wafer.
- the light guide optical system includes a first objective lens having a predetermined magnification, a second objective lens having a higher magnification than the predetermined magnification, and a first objective lens.
- An objective lens switching means for switching between the objective lens and the second objective lens, and a solid immersion lens attached to the second objective lens so as to be movable along the direction of the optical axis; can do.
- the solid immersion lens is movable along the optical axis direction with respect to the high-magnification second objective lens. For this reason, even after the solid immersion lens is fixed by suction, the focus position can be adjusted by moving the second objective lens.
- the semiconductor device observation apparatus can further include a voltage application unit for applying a voltage to the semiconductor device.
- Still another aspect of the present invention relates to a semiconductor device observation method.
- This semiconductor device observation method is a semiconductor device observation method for observing a semiconductor device formed on a semiconductor wafer, in which a voltage is applied to a predetermined portion of the semiconductor device arranged on the light incident surface of the light transmission part of the adsorber.
- the voltage application step to be applied and the light emitted from the semiconductor device and transmitted through the light transmission part are observed using the first objective lens disposed on the light emission surface side opposite to the light incident surface of the light transmission part.
- a second objective lens having a magnification higher than that of the first objective lens, and a solid immersion lens attached to the second objective lens.
- an alignment step for aligning with the observation target portion detected in the detection step On the exit surface side, an alignment step for aligning with the observation target portion detected in the detection step, an adsorption fixing step for fixing the solid immersion lens to the light exit surface by vacuum adsorption, and a second pair A focus adjustment step of adjusting the focus of the second objective lens by adjusting the position of the second objective lens along the optical axis direction of the lens, and an image of the observation target portion using the second objective lens And an image acquisition step of acquiring.
- a semiconductor device is observed with a low-magnification first objective lens without using a solid immersion lens to detect an observation target portion, and then the solid immersion lens is attached to the light emitting surface of the adsorber.
- the portion to be observed of the semiconductor device is observed with the second objective lens having a high magnification.
- the semiconductor device observation method in the voltage application step, a voltage is applied to the semiconductor device while the semiconductor device is fixed to the light incident surface by vacuum suction of the semiconductor wafer,
- the observation target portion can be detected by observing the light from the semiconductor device while adjusting the positional relationship between the first objective lens and the light transmission portion.
- this semiconductor device observation method can be effectively applied when the width of the light transmission portion is relatively large with respect to the width of the semiconductor device. In such a case, it is not necessary to change the positional relationship between the semiconductor device and the light transmission portion when detecting the observation target portion of the semiconductor device, so that the observation target portion can be easily specified. .
- a semiconductor device observation method includes a semiconductor wafer levitated and held on an adsorber by blowing air from the adsorber between the detection step and the alignment step.
- Adsorber movement that moves relative to the semiconductor device, aligns the light transmission part with the observation target location detected in the detection process, and vacuums the semiconductor wafer to fix the semiconductor device to the light incident surface
- the second objective lens and the solid immersion lens can be aligned with the observation target position where the light transmission portion is aligned.
- the semiconductor wafer is levitated and held on the suction unit, and the light transmission part is moved relative to the semiconductor device to align the light transmission part with the observation target portion.
- this semiconductor device observation method can be effectively applied when the width of the light transmission portion is relatively small with respect to the width of the semiconductor device.
- the contact area between the light incident surface and the semiconductor device and the contact area between the light exit surface and the solid immersion lens are relatively small, the adsorption efficiency of the semiconductor device and the solid immersion lens is increased. .
- evanescent coupling can be reliably realized at the interface between the semiconductor device and the light incident surface and at the interface between the light exit surface and the solid immersion lens.
- the semiconductor wafer in the alignment step, is levitated and held by blowing air from the adsorber, and the adsorber and the second objective lens And the solid immersion lens are moved together, the light transmitting portion, the second objective lens, and the solid immersion lens can be aligned with the observation target location.
- the suction unit, the second objective lens, and the solid immersion lens are integrally moved and aligned with the observation target portion, a plurality of observation target portions can be easily observed.
- the solid immersion lens in the adsorption fixing step, is moved to the light exit surface by moving the solid immersion lens in the optical axis direction of the second objective lens. After the contact, the solid immersion lens can be fixed to the light emitting surface by vacuum suction. In this case, since the solid immersion lens is attracted and fixed after being brought into contact with the light emitting surface, it is possible to prevent the positional displacement of the solid immersion lens.
- an adsorber a semiconductor device observation apparatus, and a semiconductor device observation method capable of easily changing between observation at a low magnification and observation at a high magnification of a semiconductor device. it can.
- FIG. 6 is a block diagram illustrating a functional configuration of a control unit illustrated in FIG. 5.
- FIG. It is the elements on larger scale which show the modification of the high magnification objective lens shown by FIG. It is sectional drawing which shows the structure of other embodiment of the adsorption device which concerns on this invention. It is a flowchart which shows the process of 1st Embodiment of the semiconductor device observation method concerning this invention. It is a figure which shows typically the one part process of 1st Embodiment of the semiconductor device observation method concerning this invention. It is a flowchart which shows the process of 2nd Embodiment of the semiconductor device observation method which concerns on this invention. It is a figure which shows typically the one part process of 2nd Embodiment of the semiconductor device observation method concerning this invention.
- FIG. 1 is a cross-sectional view showing a configuration of an embodiment of an adsorber according to the present invention
- FIG. 2 (a) is a plan view seen from the first surface side of the adsorber shown in FIG.
- FIG. 2 (b) is a plan view seen from the second surface side of the adsorber shown in FIG.
- FIG. 3 is an enlarged view of the region A shown in FIG. In FIGS. 2 and 3, the semiconductor wafer is omitted.
- the adsorber 10 includes a main body portion 11 and a light transmission portion 12.
- the adsorber 10 can be used, for example, in a semiconductor device observation apparatus that observes a semiconductor device using a solid immersion lens (SIL: Solid Immersion Lens).
- SIL Solid Immersion Lens
- the main body 11 has a first surface 13 on which the semiconductor wafer W on which the semiconductor device D is formed is disposed.
- the semiconductor wafer W is arranged on the first surface 13 at the arrangement position P1 indicated by the one-dot chain line in FIG.
- the main body 11 has a second surface 14 on the opposite side of the first surface 13.
- a through hole 15 that penetrates the first surface 13 and the second surface 14 is formed in the main body 11.
- the main body 11 has a disk shape, and the inner wall of the through hole 15 is formed in a cylindrical shape at a substantially central portion of the main body 11.
- the shape of the main-body part 11 is not restricted to a disk shape.
- the through hole 15 is not limited to a cylindrical inner wall.
- the light transmission part 12 is fitted in the through hole 15 and fixed with an adhesive or the like.
- the light transmission unit 12 includes a light incident surface 16 on which light from the semiconductor device D disposed on the first surface 13 is incident, and a light emitting surface 17 on which light incident from the light incident surface 16 is emitted. And have.
- the light incident surface 16 and the light emitting surface 17 face each other. Therefore, the light transmission part 12 has a cylindrical shape defined with the light incident surface 16 and the light emitting surface 17 as both end surfaces.
- the shape of the light transmission part 12 is not restricted to a cylindrical shape.
- the light incident surface 16 is exposed on the first surface 13 side.
- the light incident surface 16 is flush with the first surface 13. Therefore, when the semiconductor wafer W is disposed on the first surface 13, a predetermined semiconductor device D of the semiconductor wafer W is disposed on the light incident surface 16.
- the light emitting surface 17 is exposed on the second surface 14 side. Therefore, the light from the semiconductor device D passes through the adsorber 10 via the light transmission unit 12.
- the semiconductor wafer W disposed on the first surface 13 is vacuum-sucked and the semiconductor device D is suction-fixed on the light incident surface 16.
- a plurality (two in this case) of suction grooves 13a are formed. These first suction grooves 13 a are formed in an annular shape concentric with the edge of the first surface 13.
- Each of the first suction grooves 13 a communicates with at least one of the plurality of suction ports B provided on the second surface 14 in the vicinity of the outer edge of the main body 11, and is connected to the suction port B.
- the inside is evacuated by a vacuum pump or the like.
- the first suction groove 13a used for vacuum suction may be selected according to the shape and size of the semiconductor wafer W. Further, the shape of the first suction groove 13a is not limited to an annular shape.
- a first recess 18 for arranging the solid immersion lens S is formed on the second surface 14 of the main body 11.
- the solid immersion lens S is disposed at an arrangement position P2 indicated by a one-dot chain line in FIG.
- the first recess 18 is formed in a cylindrical shape concentric with the edge of the second surface 14.
- a second recess 19 having a cylindrical shape concentric with the edge of the second surface 14 is formed on the bottom surface 18 a of the first recess 18.
- a step 20 is formed in the main body 11 by the bottom surface 18 a of the first recess 18, the bottom surface 19 a of the second recess 19, and the side surface 19 b of the second recess 19.
- the through hole 15 is formed in the bottom surface 19 a of the second recess 19.
- the light transmitting portion 12 fitted in the through hole 15 protrudes from the bottom surface 19 a of the second recess 19 toward the second surface 14.
- the bottom surface Sa which is a flat surface portion of the solid immersion lens S, is attached to the second surface 14 of the main body 11 by vacuum suction, so that the bottom surface Sa is in close contact with and fixed to the light emitting surface 17.
- a second suction groove 14a is formed.
- the light transmission part 12 is disposed inside the second suction groove 14a. More specifically, the second suction groove 14 a is annular along the edge of the through-hole 15 by the side surface 12 a of the light transmitting portion 12 and the bottom surface 19 a and the side surface 19 b that are the inner surfaces of the second recess 19. Is formed.
- Such a second suction groove 14a communicates with a suction port B different from the suction port B with which the first suction groove 13a is communicated, and the inside of the second suction groove 14a by a vacuum pump or the like connected to the suction port B. Is evacuated.
- the light transmitting portion 12 protrudes from the bottom surface 18 a of the first recess 18 toward the second surface 14.
- the light emitting surface 17 is located on the second surface 14 side by a distance T from the bottom surface 18 a of the first recess 18, that is, the upper surface 20 a of the stepped portion 20.
- the “vacuum adsorption” here includes adsorption by evacuation of a groove that is not closed in this manner, in addition to adsorption by evacuation of an airtight groove.
- the main body 11 can be made of, for example, Cu that has good thermal conductivity and is easy to process. In this case, the heat generated by the semiconductor wafer disposed on the main body 11 can be absorbed (radiated).
- the light transmitting portion 12 is made of a material having substantially the same refractive index as that of the material constituting the substrate of the semiconductor device D (for example, Si, GaP and GaAs when the substrate of the semiconductor device D is Si). It can be.
- substantially the same refractive index means that the difference between the refractive indexes is within 5%, for example, but may be appropriately changed depending on the numerical aperture NA to be achieved.
- the light transmission part 12 is made of a material having substantially the same refractive index as that of the substrate of the semiconductor device D, the numerical aperture NA can be increased.
- the light transmission part 12 is also preferably made of Si, and when the substrate of the semiconductor device D is GaAs, the light transmission part 12 is also made of GaAs. preferable. In other words, it is preferable that the light transmission portion 12 is made of the same material as that constituting the substrate of the semiconductor device D.
- the overall numerical aperture NA is 2.3.
- the overall numerical aperture NA is 2.45.
- the second suction groove 14a is fixed while the semiconductor device D is suctioned and fixed to the light incident surface 16 by vacuum suction using the first suction groove 13a.
- the solid immersion lens S can be adsorbed and fixed to the light emitting surface 17 by vacuum adsorption using the.
- the vacuum immersion using the second suction groove 14a is stopped while the semiconductor device D is suction fixed to the light incident surface 16, thereby releasing the suction fixation of the solid immersion lens S, and the solid immersion lens. S can be removed from the light exit surface 17.
- the solid immersion lens S can be easily attached and detached while the semiconductor device D to be observed is suction fixed to the light incident surface 16. Therefore, according to the adsorber 10, the observation of the semiconductor device D at a low magnification without using the solid immersion lens S and the observation of the semiconductor device D at a high magnification using the solid immersion lens S can be easily changed. .
- the distance between the bottom surface Sa of the solid immersion lens S and the light emitting surface 17 is 10 minutes of the wavelength of the observation light. Therefore, the bottom surface Sa of the solid immersion lens S and the light emitting surface 17 need to be in close contact with each other.
- the light emission surface 17 is positioned so as to protrude toward the second surface 14 side from the bottom surface 18a of the first recess 18 (that is, the upper surface 20a of the stepped portion 20). Yes.
- the edge of the second suction groove 14a may come into contact with the bottom surface Sa of the solid immersion lens S. can avoid.
- the bottom surface Sa of the solid immersion lens S and the light emitting surface 17 can be sufficiently adhered, and evanescent coupling can be realized with certainty.
- the second suction groove 14a is used. By stopping the vacuum suction, the solid immersion lens S can be easily released from the suction fixation.
- an annular sealing member 21 made of an elastic material (for example, rubber) is attached to the bottom surface of the first recess 18. You may arrange
- the bottom surface Sa of the solid immersion lens S floats on the second surface 14 side due to the elasticity of the sealing member 21, and therefore the suction of the solid immersion lens S is performed. Fixing can be easily released.
- the adsorber 10 can further include a cooling means for cooling the main body 11.
- a cooling means for cooling the main body 11. overheating of the semiconductor device D and the solid immersion lens S can be prevented.
- normal operation of the semiconductor device D can be realized, and the refractive index of the solid immersion lens S can be prevented from changing.
- FIG. 5 is a diagram schematically showing a configuration of an embodiment of a semiconductor device observation apparatus according to the present invention.
- the semiconductor device observation apparatus 100 includes an adsorption device unit 30, a tester (voltage application means) 40, an optical device unit 50, and a control unit 70.
- the semiconductor device observation apparatus 100 can be used when, for example, a semiconductor device is observed using a solid immersion lens for failure analysis of the semiconductor device.
- the adsorption device unit 30 includes the adsorber 10 described above.
- a semiconductor wafer W on which a semiconductor device D that is an observation target of the semiconductor device observation apparatus 100 is formed is disposed in the suction unit 10.
- the suction device unit 30 is disposed on the first surface 13 and a suction device driving mechanism 31 for driving the suction device 10 in the XY direction (extending direction of the light incident surface 16 and the light emitting surface 17).
- the semiconductor wafer W further includes a wafer suction fixing part 32 for suction fixing.
- the wafer suction fixing unit 32 can be used for positioning the semiconductor wafer W with respect to the suction unit 10.
- the adsorber 10 further has a water cooling jacket (cooling means) 22 for cooling the main body 11.
- the water cooling jacket 22 is provided on the second surface 14.
- the water cooling jacket 22 has an annularly formed refrigerant passage 22a, and cools the main body 11 by circulating the refrigerant supplied from the refrigerant chiller C through the refrigerant passage 22a.
- a vacuum pump V is connected to the first suction groove 13a and the second suction groove 14a via a suction port B and a valve E.
- a vacuum pump V is connected to the wafer suction fixing portion 32 via a valve E.
- an air compressor F is connected to the first suction groove 13a via a valve E.
- These valves E can be electromagnetic valves, for example.
- the tester 40 applies a voltage to the semiconductor device D of the semiconductor wafer W disposed on the first surface 13. More specifically, the tester 40 generates an electrical signal necessary for observing the semiconductor device D, and provides the generated electrical signal to the semiconductor device D via the probe card 41 and the probe needle 42.
- the optical device unit 50 includes a light guide optical system 51 that guides light transmitted through the light transmission unit 12, a detector (imaging unit) 52 that detects and images light guided by the light guide optical system 51, and An XYZ stage 53 for driving the light guide optical system 51 in the XY direction and a Z direction perpendicular to the XY direction (a direction along the optical axis L of the light guide optical system 51).
- the light guide optical system 51 includes a low-magnification objective lens (first objective lens) 54a and a high-magnification objective lens (second objective lens) 54b to which the light transmitted through the light transmission unit 12 is incident, and a low-magnification objective lens.
- the high magnification objective lens 54b has a higher magnification than the magnification of the low magnification objective lens 54a.
- a solid immersion lens S is attached to the high-magnification objective lens 54b so as to be movable at least along the optical axis L thereof.
- FIG. 6 shows a state in which the solid immersion lens S is attached to the high-magnification objective lens 54b.
- the solid immersion lens S here includes a substantially hemispherical first portion S ⁇ b> 1 and a second portion S ⁇ b> 2 having a tapered shape.
- a lens holder 60 for holding such a solid immersion lens S is attached to the tip 54c of the high-magnification objective lens 54b.
- the inner surface 60b of the tip 60a of the lens holder 60 is inclined in accordance with the taper shape of the second portion S2 of the solid immersion lens S. For this reason, the solid immersion lens S held by the lens holder 60 is not fixed to the lens holder 60, and is held in a state in which the bottom surface Sa protrudes from the tip end portion 60a of the lens holder 60. It can move substantially along the optical axis L of the objective lens 54b.
- the lens holder 60 is provided with a lens cover 61 that regulates the movement of the solid immersion lens S in the direction toward the high-magnification objective lens 54b. Accordingly, the solid immersion lens S is held between the inner surface 60 b of the tip end portion 60 a of the lens holder 60 and the lens cover 61.
- the lens cover 61 When the lens cover 61 is made of a material that transmits observation light, the lens cover 61 may have a disk shape as shown in FIG. When the lens cover 61 is made of a material that does not transmit observation light, for example, as shown in FIG. 7B, an annular edge portion 61a and a support portion 61b spanning the edge portion 61a are provided. Thus, the light transmission port 61c can be provided.
- the control unit 70 is an electronic control unit for controlling the adsorption device unit 30, the optical device unit 50, and each valve E.
- a control unit 70 functionally includes, as shown in FIG. 8, a valve control unit 71, a stage control unit 72, a detector control unit 73, a SIL control unit 74, a lens turret control unit 75, and A chuck control unit 76 is provided.
- the valve control unit 71 controls opening and closing of each valve E. More specifically, the valve control unit 71 opens the valve E disposed between the first suction groove 13 a and the vacuum pump V when the semiconductor wafer W is suction-fixed to the first surface 13. Then, the valve E is closed when the inside of the first suction groove 13a is evacuated and the semiconductor wafer W is released from the suction fixation. Further, when the solid immersion lens S is sucked and fixed to the light emitting surface 17, the valve control unit 71 opens the valve E disposed between the second suction groove 14 a and the vacuum pump to perform the second suction. When the inside of the groove 14a is evacuated and the suction fixation of the solid immersion lens S is released, the valve E is closed.
- the valve control part 71 opens the valve E disposed between the wafer suction fixing part 32 and the vacuum pump V to suck and fix the semiconductor wafer W.
- the valve E is closed.
- the valve control unit 71 opens the valve E between the first suction groove 13a and the air compressor F and lifts the compressed air from the first suction groove 13a when the semiconductor wafer W is floated from the suction device 10.
- the valve E is closed.
- the stage control unit 72 controls the XYZ stage 53 and moves the light guide optical system 51 in the XYZ directions.
- the chuck controller 76 controls the adsorber drive mechanism 31 to move the adsorber 10 in the XY direction.
- the detector control unit 73 controls the detector 52. More specifically, the detector control unit 73 controls a camera as the detector 52 and a laser scan imaging apparatus. Examples of the camera here include a CCD camera, an InGaAs camera, an MCT camera, and a CMOS camera. Further, the detector control unit 73 can control a gain, an offset, an integration time, or the like according to the amount of light detected by the detector 52.
- the SIL control unit 74 controls the operation of the solid immersion lens S attached to the high-magnification objective lens 54b. More specifically, the SIL control unit 74 prevents the solid immersion lens S from being damaged when the solid immersion lens S is pressed against the light emitting surface 17 to be vacuum-adsorbed to the light emitting surface 17. The movement amount of the solid immersion lens S is limited, or when the solid immersion lens S is in contact with the light emitting surface 17, vacuum suction of the solid immersion lens S can be started by the control of the valve control unit 71.
- the lens turret control unit 75 switches the low-magnification objective lens 54a and the high-magnification objective lens 54b by rotating the lens turret 55, and selects a desired magnification.
- the lens turret control unit 75 can select a desired magnification by storing in advance where the objective lens of which magnification is provided in the lens turret 55.
- the lens turret control unit 75 prevents the position system from being lowered due to the influence of backlash by limiting the rotation direction of the lens turret 55 to a certain direction.
- the semiconductor device observation apparatus 100 includes the adsorber 10, the semiconductor device D of the semiconductor device D at a low magnification without using the solid immersion lens S under the control of the control unit 70. Observation (that is, observation with the low-magnification objective lens 54a) and observation of the semiconductor device D at a high magnification using the solid immersion lens S (that is, observation with the high-magnification objective lens 54b) can be easily changed.
- the configuration for movably attaching the solid immersion lens S to the high-magnification objective lens 54b is not limited to the lens holder 60.
- the configuration shown in FIG. 9 can be used.
- a lens holder 65 is attached to the tip 54c of the high-magnification objective lens 54b instead of the lens holder 60.
- the lens holder 65 has a plurality of (for example, three) holding pieces 67.
- the holding piece 67 is formed with a lens receiving surface 67b having a curvature substantially the same as the curvature of the first portion S1 of the solid immersion lens S at the front end portion 67a. Arranged on the surface 67b. Further, a locking piece 68 for locking the solid immersion lens S disposed on the lens receiving surface 67b is disposed at the distal end portion 67a of the holding piece 67. The inner surface 68a of the locking piece 68 is inclined according to the taper shape of the second portion S2 of the solid immersion lens S.
- the bottom piece Sa rotates (while rotating) so as to follow the light emitting surface 17, and the solid immersion lens S is caused by the holding piece 67. It moves so that the central axis of S is held on the axis of the radius of the holding piece 67.
- the high-magnification objective lens 54b is movable along the optical axis L, and the relative position of the high-magnification objective lens 54b with respect to the semiconductor device D is displaced when the focal position is aligned with the observation position of the semiconductor device D. To adjust.
- FIG. 10 is a cross-sectional view showing the configuration of another embodiment of the adsorber according to the present invention.
- the semiconductor device observation apparatus 100 according to the present embodiment can include the adsorber 10A shown in FIG. 10 instead of the adsorber 10 described above.
- the adsorber 10A includes a main body portion 11A and a light transmission portion 12A.
- the main body portion 11A can be made of the same material (for example, Cu) as the main body portion 11 of the adsorber 10.
- the light transmission part 12A can be made of the same material (for example, Si, GaP, GaAs, etc.) as the light transmission part 12 of the adsorber 10.
- the main body 11 ⁇ / b> A has a first surface 13 on which the semiconductor wafer W on which the semiconductor device D is formed is arranged, like the main body 11 of the adsorber 10.
- the main body 11 ⁇ / b> A has a second surface 14 ⁇ / b> A on the opposite side to the first surface 13.
- a through-hole 15A that penetrates the first surface 13 and the second surface 14A is formed in the main body portion 11A.
- the main body portion 11A has a disk shape, and the through hole 15A is disposed at a substantially central portion of the main body portion 11A.
- the through hole 15A has a truncated cone shape whose diameter increases in the direction from the first surface 13 toward the second surface 14A.
- the light transmission part 12A is fitted and fixed in the through hole 15A.
- the light transmitting portion 12A includes a light incident surface 16A on which light from the semiconductor device D disposed on the first surface 13 is incident, and a light output surface 17A from which light incident from the light incident surface 16A is emitted. Have.
- the light incident surface 16A and the light emitting surface 17A face each other. Accordingly, the light transmitting portion 12A has a truncated cone shape defined by the light incident surface 16A and the light emitting surface 17A as both end surfaces.
- the light incident surface 16A is exposed on the first surface 13 side.
- the light incident surface 16A is flush with the first surface 13. Therefore, when the semiconductor wafer W is disposed on the first surface 13, the predetermined semiconductor device D of the semiconductor wafer W is disposed on the light incident surface 16A.
- the light emission surface 17A is exposed on the second surface 14A side. Therefore, the light from the semiconductor device D passes through the adsorber 10A through the light transmission part 12A.
- the light exit surface 17A is flush with the second surface 14A.
- the solid immersion lens SA includes a hemispherical body portion SA1 and a flat plate-shaped flange portion SA2.
- the collar portion SA2 is fixed to the main body portion SA1 at the bottom of the side surface of the main body portion SA1, and is movable together with the main body portion SA1.
- the main body portion SA1 and the flange portion SA2 are made of a material that transmits light from the semiconductor device D. Further, the main surface SA21 and the back surface SA22 of the flange SA2 are polished in a mirror-like manner so as not to distort the light beam transmitted through the flange SA2.
- the shape of the collar portion SA2 can be, for example, a disk shape.
- the solid immersion lens S is attached to the high-magnification low-object lens 54b, but the solid immersion lens SA is not attached to the high-magnification objective lens 54b and is separate from the high-magnification objective lens 54b.
- the adsorber 10A has a configuration for adsorbing and fixing such a solid immersion lens SA to the second surface 14A. That is, the second surface 14A of the main body portion 11A has a plurality of second suction grooves 14Aa (for example, for fixing the solid immersion lens SA to the second surface 14A (particularly the light emission surface 17A) by vacuum suction. 2 to 5) are formed.
- the second suction groove 14Aa can be formed in an annular shape at a position corresponding to the first suction groove 13a.
- Each of the second suction grooves 14Aa communicates with a suction port (not shown), and the inside thereof is evacuated by a vacuum pump V or the like connected to the suction port.
- the solid immersion lens SA is adsorbed and fixed to the second surface 14A by evacuating the inside of the second adsorbing groove 14Aa.
- the solid immersion lens SA can be adsorbed by the entire collar SA2, so that the solid immersion lens SA can be adsorbed and fixed to the second surface 14A with a relatively large force. It can be done reliably.
- the semiconductor device observation apparatus 100 can further include a drive motor M with a linear stage.
- the drive motor M moves the solid immersion lens SA along the second surface 14A of the adsorber 10A under the control of the control unit 70.
- the semiconductor device D can be observed as follows.
- the drive motor M moves along the second surface 14A of the adsorption device 10A (in the drawing).
- the solid immersion lens SA is moved (along the direction of the arrow), and the collar portion SA2 of the solid immersion lens SA is disposed on the light emitting surface 17A of the light transmitting portion 12A (that is, the main portion SA1 of the solid immersion lens SA is emitted from the light source).
- the solid suction lens SA is sucked and fixed to the second surface 14A by evacuating the second suction groove 14Aa.
- the semiconductor device D is observed using the low-magnification objective lens 54a. While observing at a low magnification in this way, the semiconductor wafer W is moved with respect to the light transmission part 12A, and a desired observation position of the semiconductor device D is arranged at the center of the light transmission part 12A.
- the adsorber 10A is moved by the drive motor M, and the main body of the solid immersion lens SA is obtained.
- the part SA1 is disposed on the light emitting surface 17A of the light transmitting part 12A.
- the solid suction lens SA is sucked and fixed to the second surface 14A by evacuating the second suction groove 14Aa.
- the semiconductor device D is observed using the main body SA1 of the solid immersion lens SA and the high-magnification objective lens 54b.
- both magnification and NA in the microscopic observation are 3.5 times, and high-resolution observation is possible.
- the suction device 10A the vacuum suction using the second suction groove 14Aa while the semiconductor device D is suction-fixed to the light incident surface 16A by vacuum suction using the first suction groove 13a.
- the main body SA1 of the solid immersion lens SA can be adsorbed and fixed to the light emitting surface 17A.
- the suction fixing of the solid immersion lens SA is released by stopping the vacuum suction using the second suction groove 14Aa while the semiconductor device D is suction fixed to the light incident surface 16A.
- the main body SA1 of SA can be removed from the light emitting surface 17A.
- the main body SA1 of the solid immersion lens SA can be easily moved while the semiconductor device D to be observed is sucked and fixed to the light incident surface 16A. Therefore, according to the adsorber 10A, the observation of the semiconductor device D at a low magnification using the collar portion SA2 of the solid immersion lens SA and the observation of the semiconductor device D at a high magnification using the main body portion SA1 of the solid immersion lens SA. Can be easily changed.
- the semiconductor device observation apparatus 100 including the adsorber 10A under the control of the control unit 70, the semiconductor device D is observed at a low magnification using the collar SA2 of the solid immersion lens SA and the low magnification objective lens 54a.
- the observation of the semiconductor device D at high magnification using the main body SA1 of the solid immersion lens SA and the high magnification objective lens 54b can be easily changed.
- the semiconductor device observation method according to the present embodiment is a method for observing a semiconductor device using the semiconductor device observation apparatus 100 described above.
- FIG. 11 is a flowchart showing steps of this semiconductor device observation method
- FIG. 12 is a diagram schematically showing some steps in this semiconductor device observation method.
- the semiconductor wafer W is adsorbed and fixed to the first surface 13 by vacuum adsorbing the semiconductor wafer W using the adsorber 10 (step S11). More specifically, the valve control unit 71 opens the valve E disposed between the first suction groove 13a and the vacuum pump V to evacuate the inside of the first suction groove 13a, and the semiconductor wafer W Is fixed to the first surface 13 by suction. At this time, the semiconductor device D formed on the semiconductor wafer W is fixed to the light incident surface 16.
- Step S12 Voltage
- step S13 detection step
- the application of the voltage to the semiconductor device can be temporarily stopped after this step S13, and can be performed again when an image of the observation target portion is acquired in step S18 described later.
- the stage control unit 72 controls the XYZ stage 53 and drives the low-magnification objective lens 54a in the XY direction as shown in FIG. While observing the light transmitted through the light transmission part 12 while adjusting the positional relationship between the light transmission part 12 and the light transmission part 12, the observation target portion is detected.
- a plurality of observation target portions may be detected as necessary, and position data in the XY directions may be stored in the control unit 70.
- the lens turret control unit 75 controls (rotates) the lens turret 55, thereby switching the objective lens from the low magnification objective lens 54a to the high magnification objective lens 54b (step S14).
- the stage control unit 72 controls the XYZ stage 53 to move the high-magnification objective lens 54b and the solid immersion lens S attached to the high-magnification objective lens 54b in the XY direction on the light exit surface 17 side. And align with the observation target portion detected in step S13 (step S15: alignment step).
- step S16 suction fixing step. More specifically, the valve control unit 71 opens the valve E disposed between the second suction groove 14a and the vacuum pump V to evacuate the inside of the second suction groove 14a, and the solid immersion lens. Is fixed to the light emitting surface 17 by suction.
- the stage controller 72 controls the XYZ stage 53 to move the high magnification objective lens 54b and the solid immersion lens S in the Z direction so that the solid immersion lens S comes into contact with the light emitting surface 17. Thereafter, the solid immersion lens S can be fixed to the light emitting surface 17 by vacuum suction.
- the stage control unit 72 controls the XYZ stage 53 to adjust the position of the high-magnification objective lens 54b in the Z direction, thereby adjusting the focus position of the high-magnification objective lens 54b (step S17: focus adjustment step).
- step S17 focus adjustment step.
- the position of the high-magnification objective lens 54b can be adjusted even after the solid immersion lens S is fixed by suction in step S16. .
- the detector 52 acquires the image of the observation object location detected by step S13 using the high magnification objective lens 54b and the solid immersion lens S as shown in FIG.12 (b) (step S18: Image). Acquisition process). The acquired image is sent to a computer or the like connected to the detector 52 and displayed.
- the suction and fixation of the solid immersion lens S can be released, and the above steps S15 and subsequent steps can be repeated.
- the semiconductor device D is observed by the low-magnification objective lens 54a without using the solid immersion lens S, and the observation target portion is detected.
- the solid immersion lens S is attracted and fixed to the light emitting surface 17, and the observation target portion is observed by the high-magnification objective lens 54b.
- a voltage is applied to the semiconductor device D in a state where the semiconductor device D is fixed to the light incident surface 16, and the positions of the low-magnification objective lens 54 a and the suction unit 10 are determined.
- the semiconductor device D is observed while adjusting the relationship.
- this semiconductor device observation method can be applied when the width of the light transmission portion 12 is relatively larger than the width of the semiconductor device. In such a case, it is not necessary to change the positional relationship between the semiconductor device D and the suction unit 10 when detecting the observation target portion (that is, it is not necessary to align the light transmitting portion 12). Therefore, it is easy to specify the observation target part.
- the semiconductor device observation method according to the present embodiment is also a method for observing a semiconductor device using the semiconductor device observation apparatus 100 described above.
- FIG. 13 is a flowchart showing the steps of this semiconductor device observation method
- FIG. 14 is a diagram schematically showing some steps in this semiconductor device observation method.
- the semiconductor wafer W is adsorbed and fixed to the first surface 13 by vacuum adsorbing the semiconductor wafer W using the adsorber 10 (step S21). More specifically, the valve control unit 71 opens the valve E disposed between the first suction groove 13a and the vacuum pump V to evacuate the inside of the first suction groove 13a, and the semiconductor wafer W Is fixed to the first surface 13 by suction. At this time, the semiconductor device D formed on the semiconductor wafer W is fixed to the light incident surface 16.
- the tester 40 applies the probe needle 42 to a predetermined location of the semiconductor device D and applies a voltage to the predetermined location (step S22: voltage). Application step).
- step S23 detection step.
- step S23 if necessary, a plurality of observation target portions may be detected, and position data in the XY directions may be stored in the control unit 70. Further, the application of the voltage to the semiconductor device can be temporarily stopped after step S23, and can be performed again when an image of the observation target portion is acquired in step S31 described later.
- step S24 adsorber moving step. More specifically, the valve control unit 71 closes the valve E disposed between the first suction groove 13a and the vacuum pump V to stop the vacuum suction inside the first suction groove 13a, and The semiconductor wafer W arranged on the first surface 13 is opened by opening the valve E arranged between the one adsorption groove 13a and the air compressor F and blowing out compressed air from the first adsorption groove 13a. To surface. Thereby, the semiconductor wafer W is levitated and held between the first surface 13 and the probe needle 42.
- the degree of floating of the semiconductor wafer W can be determined from an interference pattern due to interference of reflected light from the boundary between the semiconductor wafer W and the light transmitting portion 12. This interference pattern becomes a dark color at the time of suction, but becomes brighter and stripes start to appear as the semiconductor wafer W rises.
- the chuck controller 76 controls the suction device driving mechanism 31 to move the suction device 10 in the XY direction, and the stage control portion 72 is a low-magnification objective lens.
- 54a is moved in the XY direction, and the light transmission unit 12 is aligned so that the center of the light transmission unit 12 matches the observation target position detected in step S23 (step S25: adsorber moving step).
- step S25 the low magnification objective lens 54a and the suction unit 10 may be fixed and the semiconductor device D (semiconductor wafer W) may be moved. In this case, the movement of the semiconductor wafer W is performed using the wafer suction fixing unit 32.
- the low-magnification objective lens 54a and the suction unit 10 may be moved along the XY direction relative to the semiconductor device D.
- this step S25 by aligning the light transmission part 12 while observing the reflected image of the semiconductor device D, the center of the light transmission part 12 can be reliably aligned with the observation target portion. Furthermore, in this step 25, it is possible to confirm whether the center of the light transmitting portion 12 is aligned with the observation target position by applying a voltage again to the semiconductor device D after the alignment of the light transmitting portion 12. . Thereby, the accuracy of alignment of the light transmission part 12 can be further improved.
- Step S26 suction device moving step. More specifically, the valve control unit 71 closes the valve E disposed between the first adsorption groove 13a and the air compressor F to stop the blowing of compressed air, and further, the first adsorption groove 13a The valve E disposed between the vacuum pump V is opened, and the inside of the first suction groove 13a is evacuated to suck and fix the semiconductor wafer.
- the lens turret control unit 75 controls (rotates) the lens turret 55 to switch the objective lens from the low magnification objective lens 54a to the high magnification objective lens 54b (step S27).
- the stage control unit 72 controls the XYZ stage 53 to move the high-magnification objective lens 54b and the solid immersion lens S attached to the high-magnification objective lens 54b in the XY direction on the light exit surface 17 side. These are aligned with the observation target position where the light transmission part 12 is aligned (step S28: alignment process).
- step S29 suction fixing step. More specifically, the valve control unit 71 opens the valve E disposed between the second suction groove 14a and the vacuum pump V to evacuate the inside of the second suction groove 14a, and the solid immersion lens. S is adsorbed and fixed.
- the stage controller 72 controls the XYZ stage 53 to move the high magnification objective lens 54b and the solid immersion lens S in the Z direction so that the solid immersion lens S contacts the light emitting surface 17. Thereafter, the solid immersion lens S can be fixed to the light emitting surface 17 by vacuum suction.
- the stage control unit 72 controls the XYZ stage 53 to adjust the position of the high-magnification objective lens 54b in the Z direction, thereby adjusting the focus position of the high-magnification objective lens 54b (step S30: focus adjustment step).
- the position of the high-magnification objective lens 54b can be adjusted even after the solid immersion lens S is attracted and fixed in step S27. .
- step S31 image acquisition process
- the acquired image is sent to a computer or the like connected to the detector 52 and displayed. Thereafter, if necessary, the steps after step S24 can be repeated using the position data stored in step S23 in order to acquire an image of another observation target portion.
- the semiconductor device D is observed at a low magnification without using the solid immersion lens S, similarly to the semiconductor device observation method according to the first embodiment. And observation of the semiconductor device D at a high magnification using a solid immersion lens can be easily changed.
- the semiconductor wafer W is levitated and held on the suction device 10, the low-magnification objective lens 54 a and the suction device 10 are moved relative to the semiconductor device D, and light is emitted.
- the transmission part 12 is aligned with the observation target part.
- this semiconductor device observation method can be applied when the width of the light transmission portion 12 is relatively small with respect to the width of the semiconductor device D.
- the contact area between the light incident surface 16 and the semiconductor device D and the contact area between the light exit surface 17 and the solid immersion lens S are relatively small.
- the adsorption efficiency of is increased. For this reason, the evanescent coupling can be reliably realized between the semiconductor device D and the light transmission part 12 and between the light transmission part 12 and the solid immersion lens S.
- the semiconductor wafer W is floated and held on the suction unit 10, and the objective lens is switched to the high-magnification objective lens 54b.
- the position data stored in the control unit 70 is obtained by moving the device 10, the high-magnification objective lens 54 b, and the solid immersion lens S as a single unit, so that the light transmission unit 12, the high-magnification objective lens 54 b and the solid immersion lens S are Can be simultaneously aligned with the observation target location using the.
- steps S30 and S31 are performed as a post process.
- the semiconductor wafer W is floated and held on the suction unit 10 without separating the solid immersion lens S from the suction unit 10, and the suction unit 10 and the high-magnification objective.
- the lens 54b and the solid immersion lens S integrally, and simultaneously aligning the light transmitting portion 12, the high magnification objective lens 54b, and the solid immersion lens S with different observation target locations, a plurality of observation target locations are obtained. Can be easily observed.
- the above-described adsorber 10, the semiconductor device observation apparatus 100, and each semiconductor device observation method can be used for obtaining a light emission image from the semiconductor device D by applying a voltage, and are formed in the semiconductor device D. It can also be used for acquiring circuit pattern images. Further, the above-described adsorber 10, the semiconductor device observation apparatus 100, and each semiconductor device observation method use the circuit pattern image, which is a reflection image from the semiconductor device D, to adjust the focus position to the observation position and It can also be used for obtaining a luminescent image obtained by applying, and for obtaining an OBIRCH image or OBIC image by scanning with a laser beam.
- an adsorber a semiconductor device observation apparatus, and a semiconductor device observation method capable of easily changing between observation at a low magnification and observation at a high magnification of a semiconductor device. it can.
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Abstract
Description
Claims (12)
- 固浸レンズを用いて半導体デバイスの観察を行う半導体デバイス観察装置に用いられる吸着器であって、
前記半導体デバイスが形成された半導体ウエハが配置される第1の面と、前記第1の面の反対側の面である第2の面とを有し、前記第1の面と前記第2の面とを貫通する貫通孔が形成された本体部と、
前記半導体デバイスからの光が入射される光入射面と、前記光入射面から入射した光が出射される光出射面とを有し、前記光入射面が前記第1の面側に露出し、且つ、前記光出射面が前記第2の面側に露出するように前記貫通孔に嵌合された光透過部と、を備え、
前記第1の面には、前記半導体ウエハを真空吸着して前記半導体デバイスを前記光入射面に固定するための第1の吸着溝が形成されており、
前記第2の面には、前記固浸レンズを真空吸着して前記光出射面に固定するための第2の吸着溝が形成されていることを特徴とする吸着器。 - 前記第2の面には前記固浸レンズを配置するための凹部が形成されており、
前記貫通孔は前記凹部の底面に形成されており、
前記光出射面は前記凹部の底面よりも前記第2の面側に位置しており、
前記第2の吸着溝は、前記凹部の底面上における前記貫通孔の縁部に沿って形成されていることを特徴とする請求項1に記載の吸着器。 - 前記光透過部は、前記半導体デバイスの基板を構成する材料の屈折率と略同一の屈折率の材料からなることを特徴とする請求項1又は2に記載の吸着器。
- 前記本体部を冷却するための冷却手段をさらに備えることを特徴とする請求項1~3の何れか一項に記載の吸着器。
- 固浸レンズを用いて半導体デバイスの観察を行う半導体デバイス観察装置であって、
請求項1~4の何れか一項に記載の吸着器と、
前記光透過部を透過した光を導光する導光光学系と、
前記導光光学系により導光された光を撮像する撮像手段と、を備えることを特徴とする半導体デバイス観察装置。 - 前記導光光学系は、所定の倍率の第1の対物レンズと、前記所定の倍率よりも高い倍率の第2の対物レンズと、前記第1の対物レンズと前記第2の対物レンズとを切り替える対物レンズ切替手段と、を有し、
前記第2の対物レンズには、その光軸の方向に沿って移動可能に前記固浸レンズが取り付けられていることを特徴とする請求項5に記載の半導体デバイス観察装置。 - 前記半導体デバイスに電圧を印加するための電圧印加手段をさらに備えることを特徴とする請求項5又は6に記載の半導体デバイス観察装置。
- 半導体ウエハに形成された半導体デバイスを観察する半導体デバイス観察方法であって、
吸着器の光透過部の光入射面上に配置された前記半導体デバイスの所定の箇所に電圧を印加する電圧印加工程と、
前記半導体デバイスから発せられ前記光透過部を透過する光を、前記光透過部の前記光入射面の反対側の光出射面側に配置した第1の対物レンズを用いて観察することにより、前記半導体デバイスにおける観察対象箇所を検出する検出工程と、
前記第1の対物レンズの倍率よりも高い倍率の第2の対物レンズと、前記第2の対物レンズに取り付けられた固浸レンズとを、前記光出射面側において、前記検出工程で検出された前記観察対象箇所に位置合わせする位置合わせ工程と、
真空吸着により前記固浸レンズを前記光出射面に固定する吸着固定工程と、
前記第2の対物レンズの光軸方向に沿っての前記第2の対物レンズの位置を調整することにより前記第2の対物レンズのフォーカスを調整するフォーカス調整工程と、
前記第2の対物レンズを用いて前記観察対象箇所の画像を取得する画像取得工程と、を含むことを特徴とする半導体デバイス観察方法。 - 前記電圧印加工程では、前記半導体ウエハを真空吸着することにより前記半導体デバイスが前記光入射面に固定された状態で前記半導体デバイスに電圧を印加し、
前記検出工程では、前記半導体デバイスからの光を前記第1の対物レンズと前記光透過部との位置関係を調節しながら観察することにより、前記観察対象箇所を検出することを特徴とする請求項8に記載の半導体デバイス観察方法。 - 前記検出工程と前記位置合わせ工程との間において、前記吸着器からの空気の吹出によって前記半導体ウエハを前記吸着器に浮上保持し、前記吸着器を前記半導体デバイスに対して相対的に移動させて、前記光透過部を前記検出工程で検出された前記観察対象箇所に位置合わせし、前記半導体ウエハを真空吸着することにより前記半導体デバイスを前記光入射面に固定する吸着器移動工程をさらに備え、
前記位置合わせ工程では、前記第2の対物レンズと前記固浸レンズとを前記光透過部が位置合わせされた前記観察対象箇所に位置合わせする、ことを特徴とする請求項8に記載の半導体デバイス観察方法。 - 前記位置合わせ工程では、前記吸着器からの空気の吹出によって前記半導体ウエハを前記吸着器に浮上保持し、前記吸着器と第2の対物レンズと前記固浸レンズとを一体的に移動させることによって、前記光透過部と前記第2の対物レンズと前記固浸レンズとを前記観察対象箇所に位置合わせすることを特徴とする請求項8に記載の半導体デバイス観察方法。
- 前記吸着固定工程では、前記固浸レンズを前記第2の対物レンズの光軸方向に移動させることにより前記固浸レンズを前記光出射面に接触させた後に、真空吸着により前記固浸レンズを前記光出射面に固定することを特徴とする請求項8~11の何れか一項に記載の半導体デバイス観察方法。
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US9565372B2 (en) * | 2014-08-22 | 2017-02-07 | Raytheon Company | Compact short flat-field schmidt optics for mm-wave operation |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004327773A (ja) * | 2003-04-25 | 2004-11-18 | Renesas Technology Corp | 故障解析装置 |
WO2006077834A1 (ja) * | 2005-01-19 | 2006-07-27 | Hamamatsu Photonics K.K. | 固浸レンズホルダ |
JP2007324457A (ja) * | 2006-06-02 | 2007-12-13 | Kawasaki Microelectronics Kk | 半導体装置の故障解析に用いる支持治具、およびその支持治具を利用した故障解析方法 |
JP2008141207A (ja) | 2007-12-10 | 2008-06-19 | Renesas Technology Corp | 故障解析装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3602465B2 (ja) * | 2000-10-10 | 2004-12-15 | Necエレクトロニクス株式会社 | 半導体装置、半導体装置の評価解析方法及び半導体装置の加工装置 |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
EP1855140A4 (en) * | 2005-02-28 | 2012-04-04 | Nikon Corp | ADAPTER FOR MICROSCOPE AND MICROSCOPE |
US20100039117A1 (en) * | 2008-08-11 | 2010-02-18 | Dcg Systems, Inc. | Temperature control system for a device under test |
US8436631B2 (en) * | 2009-06-12 | 2013-05-07 | Semicaps Pte Ltd | Wafer stage |
-
2011
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004327773A (ja) * | 2003-04-25 | 2004-11-18 | Renesas Technology Corp | 故障解析装置 |
WO2006077834A1 (ja) * | 2005-01-19 | 2006-07-27 | Hamamatsu Photonics K.K. | 固浸レンズホルダ |
JP2007324457A (ja) * | 2006-06-02 | 2007-12-13 | Kawasaki Microelectronics Kk | 半導体装置の故障解析に用いる支持治具、およびその支持治具を利用した故障解析方法 |
JP2008141207A (ja) | 2007-12-10 | 2008-06-19 | Renesas Technology Corp | 故障解析装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI579566B (zh) * | 2015-08-10 | 2017-04-21 | 創意電子股份有限公司 | 電路探測系統及其電路探測裝置 |
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