WO2011152682A3 - Transparent conductive layer, target for transparent conductive layer and a process for producing the target for transparent conductive layer - Google Patents

Transparent conductive layer, target for transparent conductive layer and a process for producing the target for transparent conductive layer Download PDF

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Publication number
WO2011152682A3
WO2011152682A3 PCT/KR2011/004081 KR2011004081W WO2011152682A3 WO 2011152682 A3 WO2011152682 A3 WO 2011152682A3 KR 2011004081 W KR2011004081 W KR 2011004081W WO 2011152682 A3 WO2011152682 A3 WO 2011152682A3
Authority
WO
WIPO (PCT)
Prior art keywords
conductive layer
transparent conductive
target
producing
niobium
Prior art date
Application number
PCT/KR2011/004081
Other languages
French (fr)
Korean (ko)
Other versions
WO2011152682A2 (en
Inventor
박장우
김상희
Original Assignee
주식회사 나노신소재
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 나노신소재 filed Critical 주식회사 나노신소재
Priority to JP2013513116A priority Critical patent/JP2013533378A/en
Priority to CN2011800276567A priority patent/CN103038834A/en
Publication of WO2011152682A2 publication Critical patent/WO2011152682A2/en
Publication of WO2011152682A3 publication Critical patent/WO2011152682A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The present invention relates to a transparent conductive layer, which comprises, based on a total weight of the transparent conductive layer, 0.01 ~ 10 wt% of an additive comprising a compound having at least one or two selected from the group that consists of tantalum, niobium and vanadium; and 90 ~ 99.99 wt% of an indium tin oxide (ITO).
PCT/KR2011/004081 2010-06-04 2011-06-03 Transparent conductive layer, target for transparent conductive layer and a process for producing the target for transparent conductive layer WO2011152682A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013513116A JP2013533378A (en) 2010-06-04 2011-06-03 Transparent conductive film, target for transparent conductive film, and method for producing target for transparent conductive film
CN2011800276567A CN103038834A (en) 2010-06-04 2011-06-03 Transparent conductive layer, target for transparent conductive layer and a process for producing the target for transparent conductive layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0052772 2010-06-04
KR20100052772 2010-06-04

Publications (2)

Publication Number Publication Date
WO2011152682A2 WO2011152682A2 (en) 2011-12-08
WO2011152682A3 true WO2011152682A3 (en) 2012-05-03

Family

ID=45067204

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/004081 WO2011152682A2 (en) 2010-06-04 2011-06-03 Transparent conductive layer, target for transparent conductive layer and a process for producing the target for transparent conductive layer

Country Status (4)

Country Link
JP (1) JP2013533378A (en)
KR (1) KR101264111B1 (en)
CN (1) CN103038834A (en)
WO (1) WO2011152682A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018206467A (en) * 2017-05-30 2018-12-27 株式会社アルバック Transparent conductive film
JP7203088B2 (en) * 2018-03-30 2023-01-12 三井金属鉱業株式会社 Oxide sintered body, sputtering target and transparent conductive film
CN112110721B (en) * 2020-09-21 2022-07-01 先导薄膜材料（广东）有限公司 Preparation method of indium tin tantalum oxide target material
CN116730710A (en) * 2023-02-07 2023-09-12 中山智隆新材料科技有限公司 High-valence element doped indium tin oxide material and preparation method and application thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100681499B1 (en) * 2002-07-09 2007-02-09 가부시키가이샤후지쿠라 Solar cell
KR100696556B1 (en) * 2006-05-19 2007-03-19 삼성에스디아이 주식회사 OLED having moisture absorption layer on encapsulation substrate and fabrication method thereof
KR20080062648A (en) * 2006-12-29 2008-07-03 삼성코닝정밀유리 주식회사 Sintered zinc oxide and method of manufacturing the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3058278B2 (en) * 1989-06-13 2000-07-04 東ソー株式会社 Oxide sintered body and its use
JPH07188912A (en) * 1993-12-27 1995-07-25 Tosoh Corp Ito powder, ito sintered compact and production of the same
JPH11144537A (en) 1997-11-07 1999-05-28 Asahi Glass Co Ltd Method for forming transparent conductive film
JP3636914B2 (en) * 1998-02-16 2005-04-06 株式会社日鉱マテリアルズ High resistance transparent conductive film, method for producing high resistance transparent conductive film, and sputtering target for forming high resistance transparent conductive film
JPH11322336A (en) * 1998-05-15 1999-11-24 Mitsubishi Materials Corp Production of tin oxide powder
KR100622168B1 (en) * 1998-08-31 2006-09-07 이데미쓰 고산 가부시키가이샤 Target for transparent electroconductive film, transparent electroconductive material, transparent electroconductive glass and transparent electroconductive film
JP4233641B2 (en) * 1998-08-31 2009-03-04 出光興産株式会社 Target for transparent conductive film, transparent conductive glass and transparent conductive film
JP2002343151A (en) 2001-03-07 2002-11-29 Ueyama Denki:Kk Manufacturing method of laminated substrate of transparent conductive film
JP4424889B2 (en) * 2001-06-26 2010-03-03 三井金属鉱業株式会社 Sputtering target for high resistance transparent conductive film and method for producing high resistance transparent conductive film
CN1283831C (en) * 2001-07-17 2006-11-08 出光兴产株式会社 Sputtering target and transparent conductive film
JP2006022373A (en) * 2004-07-07 2006-01-26 Sumitomo Metal Mining Co Ltd Method for manufacturing sputtering target for preparing transparent conductive thin film
JP2010070418A (en) * 2008-09-18 2010-04-02 Idemitsu Kosan Co Ltd SnO2-In2O3-BASED OXIDE SINTERED COMPACT AND AMORPHOUS TRANSPARENT CONDUCTIVE FILM
CN101704547B (en) * 2008-12-09 2011-04-27 南昌航空大学 Preparation method of indium tin oxide nano-powder with controllable crystalline form
CN101580379B (en) * 2009-06-29 2012-05-16 北京航空航天大学 Nb-doped nano indium tin oxide powder and method for preparing high density sputtering coating target thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100681499B1 (en) * 2002-07-09 2007-02-09 가부시키가이샤후지쿠라 Solar cell
KR100696556B1 (en) * 2006-05-19 2007-03-19 삼성에스디아이 주식회사 OLED having moisture absorption layer on encapsulation substrate and fabrication method thereof
KR20080062648A (en) * 2006-12-29 2008-07-03 삼성코닝정밀유리 주식회사 Sintered zinc oxide and method of manufacturing the same

Also Published As

Publication number Publication date
KR101264111B1 (en) 2013-05-14
KR20110133449A (en) 2011-12-12
JP2013533378A (en) 2013-08-22
WO2011152682A2 (en) 2011-12-08
CN103038834A (en) 2013-04-10

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