WO2011150693A1 - 发光二极管晶片级色彩纯化的方法 - Google Patents
发光二极管晶片级色彩纯化的方法 Download PDFInfo
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- WO2011150693A1 WO2011150693A1 PCT/CN2011/070863 CN2011070863W WO2011150693A1 WO 2011150693 A1 WO2011150693 A1 WO 2011150693A1 CN 2011070863 W CN2011070863 W CN 2011070863W WO 2011150693 A1 WO2011150693 A1 WO 2011150693A1
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- transparent film
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- transparent
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Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000000746 purification Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 6
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 6
- 238000002834 transmittance Methods 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000013078 crystal Substances 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 50
- 239000000758 substrate Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000003908 quality control method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Definitions
- the present invention relates to an LED chip, and more particularly to a LED structure on which a multilayer filter film is formed after the wafer process of the LED wafer is completed to optimize the color of the wafer. Background technique
- LEDs Light-emitting diodes
- AlGalnP materials are used in high-brightness red, orange, yellow and yellow-green LEDs.
- AlGalnN materials are used in blue and green LEDs, and are often mass-produced by metal organic Vapor Phase Epitaxy (MOVPE).
- MOVPE metal organic Vapor Phase Epitaxy
- HOMO homo-junction
- SH single-heterostructure
- DH double-heterostructure
- SQW single-quantum well
- MQW multiple Structures
- the structure of a conventional light-emitting diode is as shown in FIG. 1A.
- the upper electrode ll frr 0n electrical contact
- the capping layer or window layer capping layer or window layer
- the substrate 10 and the back electrode 13 are back contacts.
- the light transmissive layer 15 is most typically a transparent conductor oxide layer that provides a function of current spreading such as indium tin oxide (ITO).
- ITO indium tin oxide
- the active layer comprises a p-type cladding layer, an instric layer and an n-type cladding layer. Further, in order to enhance the conductivity of the transparent conductor oxide layer, the most common example is to embed the metal gate 16 in the transparent conductor oxide layer 15. That is, the metal gate 16 is formed on the active layer 12 first, and then covered with the germanium layer 15.
- the substrate 10 selects different materials as substrates for the different active layers 12.
- the material of the active layer 12 is AlGalnP, a gallium arsenide material is selected as the substrate; and when the material of the active layer 12 is AlGalnN, a sapphire material is used as the substrate.
- the active layer has a thickness of 0.3 to 3 ⁇ m and the light-transmitting layer 15 has a thickness of 10 to 50 ⁇ m. Both the active layer 12 and the light-transmitting layer 15 are subjected to organometallic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE). ) Made.
- MOVPE organometallic vapor phase epitaxy
- MBE molecular beam epitaxy
- the above process is a typical LED process.
- the epitaxial process in practice, whether it is a blue light emitting diode process, a green light emitting diode process, or a red light emitting diode process, as long as it is on a wafer of more than two turns, please refer to FIG. 1B, at the center of the wafer.
- the crystal grains 30 are offset from the crystal grains 32, 33, 34 at the edges, and the center wavelength of the light emitting diodes. For example, in the case of a blue light emitting diode, the center wavelength is about 440.
- the center wavelength of the crystal grains 34 (one end of the diameter to the other end) at the edge of the wafer may have a difference of 30 nm to 40 nm, resulting in a color deviation of the die.
- the wafer center die 30 may be offset by the process variation, causing the center wavelengths of the batch and the last batch of wafers to be shifted. Therefore, it is a big problem for semiconductor manufacturers of LED dies to break the entire batch of wafers into defective products or to test the chromatic aberration of each crystal by the quality control to eliminate the insiders who are no longer in scope.
- the center wavelength has a small offset or large offset, which is a tolerable range, but to be combined with other primary color LEDs to create a decoration or pattern.
- manufacturers such as LED-backlit TVs, LED-backlit notebooks, LED-backlit displays, and LED-backlit phones. Its requirements are usually more stringent and unacceptable. Especially for high-end models.
- the present invention provides a wafer level light emitting diode multilayer filter film for purifying LED color.
- a primary object of the present invention is to provide a method for LED wafer level color purification and a color purification structure for an LED wafer.
- the present invention discloses a method for color-grading a light-emitting diode (LED) wafer level, comprising at least the following steps: First, an LED wafer is fabricated by a conventional semiconductor process. There is no limit to the single-sided or double-sided light output, and the two electrodes have not been manufactured. Next, the center wavelength value of the predetermined light output of the light emitting diode (LED) wafer level is set. Subsequently, two appropriate transparent films were selected as the multilayer film. A preferred embodiment of the two transparent films is a low refractive index silicon dioxide film, and the other is a metal oxide film having a relatively high refractive index and can be deposited in combination with a silicon dioxide film.
- the predetermined thickness value of the two transparent films alternately deposited.
- An object of the present invention is to provide a method for color-level purification of a light-emitting diode wafer level, the method comprising: providing an LED wafer, a process of completing an n-type semiconductor epitaxial layer, an active layer, and a p-type semiconductor epitaxial layer; The predetermined central wavelength value is determined; the material of the first transparent film in which the silicon dioxide is a multilayer film is selected; the metal oxide film having a higher refractive index than the silicon dioxide film is selected as the material of the second transparent film; The central wavelength of the light emitted from the LED wafer; the thickness of the first transparent film and the second transparent film are alternately deposited, and the predetermined thickness is determined by the center wavelength, the first transparent film, the second transparent film, The refractive index of the outermost film of the LED wafer is calculated by calculating the thickness of each layer under the alternating deposition of the first transparent film and the second transparent film, and the refractive index is a relative central wave. Long-term refractive index;
- An object of the present invention is to provide a light-emitting diode wafer level color purification structure, comprising: a first transparent film and a second transparent film are alternately deposited with more than 90 layers to make the wavelength of the center wavelength of the LED chip light out at Within ⁇ 1% of the preset value, or 80 layers or more, so that the wavelength of the center wavelength is within ⁇ 3% of the preset value, wherein the first transparent film is a low refractive index material layer, and the second The transparent film is a film layer of a high refractive index material.
- the ion plasma cleaning of the LED wafer is performed, followed by the ion plasma assisted electron gun deposition technique, and the first transparent film and the second transparent film are alternately deposited according to the predetermined thickness of each film layer. Finally, the p, n electrodes are formed and the wafer is diced into a die.
- 1A is a structure of a known light emitting diode
- FIG. 1B shows that the crystal grains of the known LED wafer may have a central wave shift at the center and the edge due to the process
- Figure 2 shows the structure of the present invention for plating a multilayer film on an LED wafer
- Figure 3 shows the simulation results of the center wavelength after purification of the LED wafer according to the present invention, including a 95-layer filter film for blue light, a 105-layer filter film for green light, and a 120-layer filter film for red light;
- 4A and 4B show the thickness values of each layer of the multilayer film used in the green and blue LED chips corresponding to FIG. 3;
- Figures 5A, 5B show the thickness values of each layer of the multilayer film used in the red LED wafer corresponding to Figure 3.
- the present invention provides a wafer level light emitting diode multilayer filter film and a method of color purification thereof to solve the above problems.
- the semiconductor manufacturers of LED dies only need to eliminate the poor brightness (there is only one kind of the center wavelength of the whole wafer) without the color difference, quality control It will become very easy.
- the quality of LED-backlit TV, LED-backlit notebook, LED-backlit display, and LED-backlit mobile phone tends to be consistent.
- FIG. 1A A cross-sectional view of a conventional light emitting diode structure is shown in FIG. 1A. From bottom to top, the substrate 10 (including an n-type semiconductor layer epitaxial layer), an active layer 120, a transparent layer 15 (including a p-type semiconductor layer, a current diffusion layer), whether it is an n-side light-emitting diode, or The light-emitting diode chips on the different sides of p and n can be set to a certain value by applying the method of the present invention to the center wavelength of the LED light.
- the structure of the present invention is further formed with a multilayer filter layer 50 in which the first transparent layer 51 and the second transparent layer 52 are alternated at the topmost layer 15 of Fig. 1A.
- the first transparent layer 51 and the second transparent layer 52 are Si0 2 and Ti0 2 , respectively . These two materials have refractive indices of 1.45 to 1.48 and 2.2 to 2.5, respectively.
- the first transparent layer 51 is not limited to SiO 2 , and it may be another metal oxide such as zirconia (Zr0 2 ) or a fluoride such as MgF 2 .
- the second transparent layer 52 may be Ti 2 0 5 , Ta 2 0 5 , Nb 2 0 5 .
- the first transparent layer 51 and the second transparent layer 52 have a common feature that the first transparent layer 51 has a different refractive index than the second transparent layer 52, and is alternately deposited one low and one high. Further, since the multilayer filter layer 50 deposited by the present invention is at least tens of layers, for example, at least 80 layers or more, it is not important to alternate first, then lower, or higher, then lower, and lower.
- the method of the present invention is to make the center wavelength of the whole wafer the same, for example, if the target wavelength is 440 nm, the whole piece is 440 nm, regardless of the original LED chip semi-finished product (the semi-finished product described here is to make the conventional LED wafer process have been All done, except for the wafer core on the wafer where the uppermost metal electrode has not been completed, is the change in the center wavelength of the wafer core toward the periphery of the wafer.
- the method of the present invention selects a high refractive index metal oxide material such as Ti0 2 and Ta 2 0 5 as the first layer 51 or the second layer 52 is plated on the uppermost layer of the wafer, which in one embodiment is the wafer 20
- the uppermost layer is a transparent conductor oxide layer 15, such as indium tin oxide ITO, and in another embodiment, for example, a p-type epitaxial layer, a binary or quaternary epitaxial layer.
- Another lower refractive index oxide material such as SiO 2 is used as the second layer or the first layer is plated on the first layer.
- a high-level, low-refractive, two-layer coating is alternately deposited.
- the refractive index of the uppermost layer of the wafer will affect the thickness of the first coating, and
- the thickness and refractive index of one layer of coating affect the angle of incidence of the second layer of coating.
- the setting of boundary conditions is necessary, and it may include (1) setting the center wavelength of the outermost layer of the multilayer film, and selecting a layer number to be the total layer of the multilayer film.
- the number or (2) the lower limit of the transmittance at the center wavelength for example, the transmittance is limited to 95%, or (3) the transmittance is 50%, which is ⁇ 1% or 2% or 3% of the center wavelength.
- the wave width is used as a boundary condition.
- (4) the incident angle of the light emitted from the LED wafer into the first transparent film may be used as a boundary condition, and the incident angle may not be less than ⁇ 45 degrees.
- the thickness and the refraction angle of the second outer layer are calculated, and the thickness of the third outer layer is calculated according to the refractive index, incident angle and thickness of the second outer layer. And so on, until the top layer of the LED chip.
- the above calculations are shown in the following mathematical expressions.
- the layer will be up to one hundred layers. Therefore, in the calculation, the following mathematical formula is represented by a computer program.
- the center wavelength of the final target light output, the allowable width of the outermost layer of the wave width, the refractive index of the first material film layer, the refractive index of the second material film layer, and the refractive index of the wafer substrate are used as parameters, the calculation can be calculated.
- the predetermined thickness of each film layer is used as parameters.
- the ion beam assisted electron gun evaporation method is performed to perform the deposition of the multilayer film 50. .
- W is the refractive index of the coating material, is the thickness of the film
- ⁇ ' ⁇ is the refractive index of the outermost outer layer, such as air.
- the coating material 1 or 2 is the coating thickness, according to a preferred embodiment of the present invention.
- the ion source When the plasma is cleaned, the ion source has an argon flow rate of 45 sccm and an oxygen flow rate of 8 sccm, while in the electron gun evaporation,
- the neutralizer acts to discharge the charge of the ion source, so there is a matching ratio. If the current of the ion source is 900 mA and the ratio of the neutralizer is 150%, the current value of the neutralizer is 1350 Ma. 3 is a simulation result of a central wavelength of a 95-, 105-, and 120-layer filter film on a blue LED chip, a green LED chip, and a red LED chip, respectively, according to the method of the present invention. The % transmittance is simulated as a boundary condition under the condition that the wavelength is 2% of the center wavelength.
- Fig. 4A and Fig. 4B show the film thicknesses of the two layers alternately in the 105 layers of the green light of the multilayer filter film.
- the results of Fig. 3 are simulated according to the conditions of Figs. 4A, 4B, 5A, and 5B.
- the bonding between the film layer and the film layer and the bonding of the outermost layer of the film wafer substrate must be considered.
- the present invention purifies the LED wafer level color, in other words, the center wavelength of the light output is adjusted to the same value, and the color matching is very convenient.
- the LED wafer level color purification provided by the present invention can reduce the cost of quality control, and the quality control personnel only need to use the transmittance as the standard for quality control. Compared with the conventional LED chips which are not color-purified, it is necessary to judge whether or not the center wavelength of each wafer is acceptable. Obviously, the advantages of the present invention stand out.
- the present invention can be widely applied to color purification of blue light, red light, and green light.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013512731A JP2013530529A (ja) | 2010-06-01 | 2011-01-31 | 発光ダイオードウェハレベルの色純化方法 |
EP11789072.3A EP2579342A4 (en) | 2010-06-01 | 2011-01-31 | METHOD FOR COLOR CLEANING OF AN ILLUMINATED DIODE AT WAF LEVEL |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201010194081.5A CN102270724B (zh) | 2010-06-01 | 2010-06-01 | 发光二极管晶片级色彩纯化的方法 |
CN201010194081.5 | 2010-06-01 |
Publications (1)
Publication Number | Publication Date |
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WO2011150693A1 true WO2011150693A1 (zh) | 2011-12-08 |
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Application Number | Title | Priority Date | Filing Date |
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PCT/CN2011/070863 WO2011150693A1 (zh) | 2010-06-01 | 2011-01-31 | 发光二极管晶片级色彩纯化的方法 |
Country Status (4)
Country | Link |
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EP (1) | EP2579342A4 (zh) |
JP (1) | JP2013530529A (zh) |
CN (1) | CN102270724B (zh) |
WO (1) | WO2011150693A1 (zh) |
Cited By (1)
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CN113972155A (zh) * | 2021-10-21 | 2022-01-25 | 京东方科技集团股份有限公司 | 一种led芯片转移装置、设备以及控制方法 |
Families Citing this family (2)
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CN105428492A (zh) * | 2014-09-11 | 2016-03-23 | 晶极光电科技股份有限公司 | 具有色彩纯化滤光层的发光二极管晶粒及其批量制造方法 |
CN110571319A (zh) * | 2019-10-17 | 2019-12-13 | 扬州乾照光电有限公司 | 一种多堆栈odr的倒装led结构及制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1146734C (zh) * | 2001-12-07 | 2004-04-21 | 中国科学院上海技术物理研究所 | 超窄带通光学薄膜滤光片及膜层厚度产生方法 |
CN101383341A (zh) * | 2008-10-21 | 2009-03-11 | 友达光电股份有限公司 | 发光二极管模块 |
US7532382B2 (en) * | 2006-06-07 | 2009-05-12 | Konica Minolta Opto, Inc. | Display element |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10008A (en) * | 1853-09-13 | India-rtjbbee | ||
US7006A (en) * | 1850-01-08 | Chubh | ||
JPH08236807A (ja) * | 1995-02-24 | 1996-09-13 | Ricoh Co Ltd | 半導体発光素子及び半導体発光素子アレイチップ |
CN100459189C (zh) * | 2003-11-19 | 2009-02-04 | 日亚化学工业株式会社 | 半导体元件 |
TWI229954B (en) * | 2004-06-29 | 2005-03-21 | Ledarts Opto Corp | III-V nitride compound LED flip-chip structure having multiple layers of reflective film and manufacturing method thereof |
US20060043398A1 (en) * | 2004-08-30 | 2006-03-02 | Pei-Jih Wang | Light emitting diode with diffraction lattice |
JP2006278567A (ja) * | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | Ledユニット |
DE102005062514A1 (de) * | 2005-09-28 | 2007-03-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
WO2008036958A2 (en) * | 2006-09-23 | 2008-03-27 | Ylx Corporation | Brightness enhancement method and apparatus of light emitting diodes |
JP2009105379A (ja) * | 2007-10-05 | 2009-05-14 | Panasonic Electric Works Co Ltd | 発光装置 |
KR20100097205A (ko) * | 2007-12-10 | 2010-09-02 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 단순화된 광 추출을 갖는 하향-변환된 발광 다이오드 |
US8916890B2 (en) * | 2008-03-19 | 2014-12-23 | Cree, Inc. | Light emitting diodes with light filters |
CN201466055U (zh) * | 2009-04-07 | 2010-05-12 | 山东璨圆光电科技有限公司 | 具有多层膜穿透窗被覆层的发光二极管结构 |
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2010
- 2010-06-01 CN CN201010194081.5A patent/CN102270724B/zh not_active Expired - Fee Related
-
2011
- 2011-01-31 JP JP2013512731A patent/JP2013530529A/ja active Pending
- 2011-01-31 WO PCT/CN2011/070863 patent/WO2011150693A1/zh active Application Filing
- 2011-01-31 EP EP11789072.3A patent/EP2579342A4/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1146734C (zh) * | 2001-12-07 | 2004-04-21 | 中国科学院上海技术物理研究所 | 超窄带通光学薄膜滤光片及膜层厚度产生方法 |
US7532382B2 (en) * | 2006-06-07 | 2009-05-12 | Konica Minolta Opto, Inc. | Display element |
CN101383341A (zh) * | 2008-10-21 | 2009-03-11 | 友达光电股份有限公司 | 发光二极管模块 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113972155A (zh) * | 2021-10-21 | 2022-01-25 | 京东方科技集团股份有限公司 | 一种led芯片转移装置、设备以及控制方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102270724A (zh) | 2011-12-07 |
CN102270724B (zh) | 2014-04-09 |
EP2579342A4 (en) | 2015-10-21 |
JP2013530529A (ja) | 2013-07-25 |
EP2579342A1 (en) | 2013-04-10 |
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