WO2011132805A1 - Procédé de revêtement d'une del - Google Patents

Procédé de revêtement d'une del Download PDF

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Publication number
WO2011132805A1
WO2011132805A1 PCT/KR2010/002548 KR2010002548W WO2011132805A1 WO 2011132805 A1 WO2011132805 A1 WO 2011132805A1 KR 2010002548 W KR2010002548 W KR 2010002548W WO 2011132805 A1 WO2011132805 A1 WO 2011132805A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
coating
emitting diode
light
coating material
Prior art date
Application number
PCT/KR2010/002548
Other languages
English (en)
Korean (ko)
Inventor
방동수
Original Assignee
우리엘에스티 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 우리엘에스티 주식회사 filed Critical 우리엘에스티 주식회사
Priority to PCT/KR2010/002548 priority Critical patent/WO2011132805A1/fr
Publication of WO2011132805A1 publication Critical patent/WO2011132805A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations

Definitions

  • the present disclosure relates to a method of coating a light emitting diode as a whole, and more particularly, to a method of coating a light emitting diode that can be applied to a process of molding a surface of a light emitting diode.
  • FIG. 1 is a view for explaining an example of a conventional method of coating a light emitting diode, the light emitting diode 110 is coated in a fixed state bonded to the mount 120.
  • the mount 120 includes a lead frame 130 into which power is introduced, and the light emitting diode 110 is electrically connected to the lead frame 130.
  • the thin metal wire 140 is connected, which is referred to as a 'wire bonding process'.
  • the coating is performed by dropping the coating material 150 in the form of droplets onto the light emitting diodes 110 in which the wire bonding process is completed.
  • the coating material 150 in the form of droplets is cured in a state in which it flows and surrounds the light emitting diodes 110.
  • the light emitting diodes 110 are fixed to the mount 120 and the coating is performed after the wire bonding process is completed, if a defect occurs in the coating process, the light emitting diode 110 is disposed together with the mount 120, thereby causing a large loss. .
  • the thickness of the light emitting diode 110 is coated is determined by the flow of the coating material in the droplet state, there is a problem that it is almost impossible to form a constant coating thickness.
  • a method of coating a light emitting diode including a multilayer semiconductor layer and a bonding pad provided therein comprising: providing a coating material on the light emitting diode; Selectively irradiating light that does not pass through the bonding pad to the coating material in a direction from the multilayer semiconductor layer to the bonding pad to form a cured coating layer on the light emitting diode; And removing the uncured coating material.
  • a coating method of a light emitting diode is provided.
  • 1 is a view for explaining an example of a coating method of a conventional light emitting diode
  • FIGS. 2 to 5 are views for explaining step by step an example of a coating method of a light emitting diode according to the present disclosure
  • FIG. 6 is a view for explaining another example of the coating method of the light emitting diode according to the present disclosure.
  • FIGS. 2 to 5 are diagrams for explaining an example of a method of coating a light emitting diode according to the present disclosure step by step, the step of placing a plurality of light emitting diodes 10 at a predetermined interval (see Fig. 2), Providing a coating material 20 on the light emitting diodes 10 (see FIG. 3), selectively curing the coating material 20 (see FIG. 4) and uncured coating materials 20c, 20d. Removing (see FIG. 5).
  • the light emitting diode 10 includes an n-type semiconductor layer 11c that provides electrons, a p-type semiconductor layer 11a that provides holes, an n-type semiconductor layer 11c, and a p-type semiconductor layer. Interposed between (11a) and provided in a multi-layer structure including an active layer (11b) is generated by the recombination of the provided electrons and holes.
  • Examples of the material constituting the multilayer semiconductor layer 11 include a group III nitride semiconductor, a group 2 oxide semiconductor, and a GaAs-based semiconductor used for red light emission.
  • the semiconductor layer 11 of the multi-layer structure is grown on the substrate 13 mainly by MOCVD (organic metal vapor growth method).
  • the substrate 13 may be a GaN-based substrate used as a homogeneous substrate when a group III nitride semiconductor is grown, and a sapphire substrate, a SiC substrate, or a Si substrate may be used as a heterogeneous substrate.
  • bonding pads 15a and 15c are provided on the n-type semiconductor layer 11c and the p-type semiconductor layer 11a, respectively.
  • the bonding pads 15a and 15c may be formed of an electrically conductive material and may be formed of a material containing chromium (Cr), and may include a material including titanium (Ti) instead of chromium (Cr). It may be provided. In addition, gold (Au), aluminum (Al) may be provided as a material further containing.
  • chromium is most commonly used as the metal material of the photomask, because of good adhesion to quartz or glass, high pattern accuracy, and strong chemical resistance during cleaning. This is because the overall life is long.
  • the substrate 13 on which the semiconductor layer 11 of the multilayer structure is grown is referred to as a so-called epi-wafer, and the light emitting diode 10 is formed by a process of cutting an epi wafer.
  • the process of cutting the epi wafer is performed using a laser or diamond cutting machine.
  • the plurality of light emitting diodes 10 separated by the process of cutting the epi wafer is attached to the fixing member 30 to prevent movement of the light emitting diodes.
  • the fixing member 30 is made of a light-transmissive substrate coated with an adhesive or a stretchable material (eg, transparent tape).
  • the interval between the plurality of light emitting diodes 10 attached to the fixing member 30 may be widened by stretching the fixing member 30.
  • a process of arranging the separated plurality of light emitting diodes 10 according to the performance through a performance test may be added, and in this process, the light emitting diodes 10 may be arranged to form a gap between the light emitting diodes 10.
  • the coating material 20 is applied to the light emitting diodes 10 disposed on the fixing member 30 by a predetermined interval.
  • the coating material 20 is applied to a thickness covering the light emitting diodes 10.
  • the coating material 20 is provided with a photocurable material that is cured by light.
  • Examples of the photocurable material include UV epoxy and UV-patternable polymer, and may be provided with a resin that may be cured or patterned by light.
  • the coating material 20 is preferably provided with a photocurable material that is cured by light in the ultraviolet region.
  • the curable material is divided into a photocurable resin and a thermosetting resin.
  • Thermosetting resins are resins cured by heat (or infrared rays) and have stable characteristics and reliability.
  • the curing time is longer than that of the photocurable resin, and there is a disadvantage that it cannot be used when patterning is required or to be locally cured.
  • the photocurable resin is generally a resin cured by ultraviolet rays, so that curing is performed in a short time, so that the process time may be shortened and local curing may be required or patterning may be used.
  • the coating material 20 may be mixed with a phosphor 23 for changing the wavelength of the light emitted from the active layer (11b).
  • a photo mask 40 is provided under the fixing member 30 for the selective curing of the applied coating material 20.
  • the photo mask 40 may have a window A partitioned into a number corresponding to the plurality of light emitting diodes 10, that is, light aligned with an interval between the light transmitting region and the plurality of light emitting diodes 10. It does not have the mask pattern of the area B.
  • the plurality of windows A are provided to be aligned with the plurality of light emitting diodes 10, and the light emitting diodes 10 are positioned inside the outline of each window A.
  • a predetermined horizontal gap W is formed between the outline of each window A and the side surface of the light emitting diode 10 corresponding thereto.
  • Light is preferably provided with light in the ultraviolet region.
  • the coating material 20a on each side of the light emitting diode 10 is cured by a part of the light passing through the window A, and the coating material 20b on the top surface of the light emitting diode 10 is formed by the window A.
  • FIG. And light transmitted through the light emitting diode 10.
  • the coating material 20c at intervals between the respective light emitting diodes 10 is kept uncured by the region B through which light cannot pass.
  • the coating material 20d on the bonding pads 15a and 15c among the coating materials on the upper surface of the light emitting diode 10 is kept uncured because light is blocked by the bonding pads 15a and 15c.
  • the bonding pads 15a and 15c function as a kind of photo mask.
  • the difficulty of forming the mask pattern corresponding to the bonding pads 15a and 15c having a very small size can be eliminated, and the labor cost is reduced because the mask pattern corresponding to the bonding pads 15a and 15c is not required.
  • the yield of the coating process can be greatly improved.
  • the thickness of the coating material 20a is coated on the side of the light emitting diode 10 according to the horizontal distance (W) between the outline of each window (A) and the side of the light emitting diode 10 corresponding thereto. Is determined.
  • the thickness of the coating material 20a on the side surface of the light emitting diode 10 may be optimized by adjusting the horizontal spacing W between the outline of the window A and the side surface of the light emitting diode 10.
  • the light is preferably irradiated in a direction perpendicular to the bonding pads 15a and 15c from the bottom of the multilayer semiconductor layer 11 so that the side coating thickness of the light emitting diode 10 is constant.
  • the wire bonding process may be performed after the coating process is completed.
  • FIG. 6 is a view for explaining another example of the coating method of the light emitting diode according to the present disclosure, in order to control the thickness of the coating material 20 applied to the light emitting diode 10, the coating material 20 is fixed member ( There is a difference from the above-described example in that the flow preventing film 35 which is prevented from continuously flowing in the direction parallel to the 30 is provided around the fixing member 30.
  • the flow preventing film 35 is formed to be higher than the thickness of the light emitting diode 10, in which case the thickness of the coating material 20 may be controlled by the amount of the coating material 20 supplied for the application of the light emitting diode 10.
  • the thickness of the coating material 20 may be controlled by the amount of the coating material 20 supplied for the application of the light emitting diode 10.
  • the coating method of the light emitting diode characterized in that the coating material provided on the bonding pad is not cured. This is made possible by irradiating light curing the coating material on the bottom surface of the light emitting diode.
  • the bonding pad serves as a kind of mask.
  • the step of forming a cured coating layer is a method of coating a light emitting diode, characterized in that for selectively irradiating light to the coating material using a photo mask provided under the multi-layer semiconductor layer.
  • the photomask has at least one window partitioned so as to correspond to one light emitting diode and has light transmitted therethrough, and the thickness of the cured coating layer formed on the side of the light emitting diode is equal to the horizontal gap of the window and the multilayer semiconductor layer.
  • a coating method of a light emitting diode characterized in that provided with a plurality of light emitting diodes, arranged apart by a predetermined interval.
  • the plurality of light emitting diodes are fixed integrally by the light transmitting member, and the step of forming the cured coating layer is a photo mask provided under the light transmitting member, which is partitioned so as to correspond to the plurality of light emitting diodes one-to-one and transmits light.
  • a method of coating a light emitting diode comprising irradiating light selectively to a coating material using a photomask having two windows.
  • the coating material includes a phosphor, and the bonding pad is coated with a light emitting diode, characterized in that provided with an electrically conductive material containing chromium (Cr).
  • the plurality of light emitting diodes are fixed integrally by the light transmissive member, and the step of forming the cured coating layer is a pattern formed on the lower surface of the light transmissive member.
  • Method of coating a light emitting diode characterized in that for selectively irradiating light to the coating material using a pattern comprising a.
  • the bonding pad provided in the light emitting diode is used as a kind of photo mask, the cost and labor required to manufacture a separate photo mask for removing the coating material on the upper portion of the bonding pad is reduced. Removal can greatly improve yield.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un procédé de revêtement d'une DEL comprenant une couche semi-conductrice multicouche et une plage de soudure incluse dans celle-ci. Le procédé de revêtement comprend les étapes consistant à : préparer une matière de revêtement sur la DEL; former une couche de revêtement durcie dans la DEL en irradiant sélectivement une matière de revêtement à l'aide d'une lumière ne pouvant pas traverser la plage de soudure, dans la direction allant de la couche semi-conductrice multicouche vers la plage de soudure; et éliminer la matière de revêtement non durcie.
PCT/KR2010/002548 2010-04-23 2010-04-23 Procédé de revêtement d'une del WO2011132805A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/KR2010/002548 WO2011132805A1 (fr) 2010-04-23 2010-04-23 Procédé de revêtement d'une del

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2010/002548 WO2011132805A1 (fr) 2010-04-23 2010-04-23 Procédé de revêtement d'une del

Publications (1)

Publication Number Publication Date
WO2011132805A1 true WO2011132805A1 (fr) 2011-10-27

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Family Applications (1)

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PCT/KR2010/002548 WO2011132805A1 (fr) 2010-04-23 2010-04-23 Procédé de revêtement d'une del

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WO (1) WO2011132805A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019158648A1 (fr) * 2018-02-19 2019-08-22 Signify Holding B.V. Dispositif étanche doté d'un moteur lumière

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040024545A (ko) * 2001-02-21 2004-03-20 인터내셔널 비지네스 머신즈 코포레이션 기판상에 증착된 다중층 구조물에 대한 고분해능포토레지스트 구조화
US6756186B2 (en) * 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
KR20090076101A (ko) * 2008-01-07 2009-07-13 서울대학교산학협력단 발광 다이오드 코팅 방법
JP2009188237A (ja) * 2008-02-07 2009-08-20 Fuji Xerox Co Ltd 発光素子アレイチップの製造方法、マイクロレンズ成形型、発光素子ヘッドおよび画像形成装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040024545A (ko) * 2001-02-21 2004-03-20 인터내셔널 비지네스 머신즈 코포레이션 기판상에 증착된 다중층 구조물에 대한 고분해능포토레지스트 구조화
US6756186B2 (en) * 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
KR20090076101A (ko) * 2008-01-07 2009-07-13 서울대학교산학협력단 발광 다이오드 코팅 방법
JP2009188237A (ja) * 2008-02-07 2009-08-20 Fuji Xerox Co Ltd 発光素子アレイチップの製造方法、マイクロレンズ成形型、発光素子ヘッドおよび画像形成装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019158648A1 (fr) * 2018-02-19 2019-08-22 Signify Holding B.V. Dispositif étanche doté d'un moteur lumière
JP2021508182A (ja) * 2018-02-19 2021-02-25 シグニファイ ホールディング ビー ヴィＳｉｇｎｉｆｙ Ｈｏｌｄｉｎｇ Ｂ．Ｖ． ライトエンジンを備える封止デバイス

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