WO2011129203A1 - Dispositif émetteur de lumière - Google Patents

Dispositif émetteur de lumière Download PDF

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Publication number
WO2011129203A1
WO2011129203A1 PCT/JP2011/058423 JP2011058423W WO2011129203A1 WO 2011129203 A1 WO2011129203 A1 WO 2011129203A1 JP 2011058423 W JP2011058423 W JP 2011058423W WO 2011129203 A1 WO2011129203 A1 WO 2011129203A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
light
emitting device
wiring portion
mounting region
Prior art date
Application number
PCT/JP2011/058423
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English (en)
Japanese (ja)
Inventor
玄明 笹野
Original Assignee
日亜化学工業株式会社
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Filing date
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Publication of WO2011129203A1 publication Critical patent/WO2011129203A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements

Definitions

  • the present invention relates to a light emitting device that can be used as a lighting source such as an LED bulb, a display device, a display, a backlight light source of a liquid crystal display, and the like.
  • LEDs light emitting diodes
  • Patent Document 1 a base on which a plurality of light emitting diode elements are mounted, a printed circuit board disposed on the upper surface of the base, and a region on which the plurality of light emitting diode elements are mounted are sandwiched between the printed circuit boards.
  • a light-emitting diode light source unit including a cathode and an anode terminal electrode.
  • JP 2006-295085 A Japanese Patent Laying-Open No. 2010-034487 (see FIG. 7B)
  • a light emitting device in which several tens of light emitting elements are arranged on a substrate has been actively developed.
  • the light-emitting device cannot be driven due to the capacity and output voltage of the power source connected to the light-emitting device, the voltage needs to be boosted, The problem that becomes worse occurs.
  • a power supply with an output voltage of 30 V is preferably used, and when a power supply with an output voltage of 20 V is used, the voltage is boosted and driven. If a power supply with an output voltage of 60V is used, the light emission efficiency is deteriorated.
  • a light emitting device suitable for the capacity of a power source connected to the light emitting device is desired, and in a light emitting device in which a plurality of light emitting elements are arranged, it depends on how many light emitting elements are connected in series. become.
  • there is a limit to the size of the light-emitting device and the number of light-emitting elements connected in series provided in a light-emitting device of a certain size is also limited, as brightness improvement is required.
  • the present invention has been made in view of the above-described problems, and provides a light-emitting device suitable for a power source having various capacities and output voltages, can increase the number of series connections, and can extract light efficiently. It is an object of the present invention to provide a light emitting device improved in the above.
  • a light-emitting device includes a substrate, a light-emitting unit including a plurality of light-emitting elements arranged in a mounting region on the substrate, and a pad unit and a wiring unit,
  • a light emitting device comprising: a positive electrode and a negative electrode that apply a voltage to the light emitting unit through the wiring unit; and a light reflecting resin formed on the substrate so as to cover at least the wiring unit, wherein the mounting region A relay wiring portion is formed along the periphery of the, and the relay wiring portion is covered with the light reflecting resin.
  • the number of light emitting elements connected in series via the relay wiring portion can be increased and the loss of emitted light can be reduced within a limited area of the mounting region.
  • a light emitting device with improved light extraction efficiency can be obtained.
  • the plurality of light-emitting elements each include a p-electrode formed on one side and an n-electrode formed on the other side, and the plurality of light-emitting elements are connected to the relay wiring portion with respect to the p-electrode. It is preferable to include a light emitting element connected to the electrode and a light emitting element connected to the n electrode.
  • the light emitting elements connected in series from the positive electrode and the light emitting elements connected in series toward the negative electrode can be connected via the relay wiring portion, and the light emitting devices connected in series as the light emitting device.
  • the number of elements can be increased.
  • a plurality of light emitting elements can be densely arranged, and a light emitting device with improved power consumption with respect to constant luminance or light emission with respect to constant power consumption. A light-emitting device with improved efficiency can be obtained.
  • the p-electrode is arranged so as to face one direction with respect to the mounting region between the positive wiring portion and the relay wiring portion, and between the negative wiring portion and the relay wiring portion. It is preferable that the p electrodes are arranged so as to face the other direction with respect to the mounting region.
  • the relay wiring portion is formed along the periphery of the mounting area, and the light emitting elements are arranged so that the direction is reversed with the relay wiring portion as a boundary, thereby connecting the light emitting elements to each other.
  • the number of light emitting elements connected in series via the relay wiring portion can be increased within a limited area of the mounting region without complicating the wiring to be performed.
  • a plurality of light emitting elements can be densely arranged, and a light emitting device with improved power consumption with respect to constant luminance or light emission with respect to constant power consumption. A light-emitting device with improved efficiency can be obtained.
  • a plurality of the relay wiring portions are provided and a part of the plurality of light emitting elements is sandwiched between the two relay wiring portions.
  • the wiring for connecting the light emitting elements does not become complicated via the relay wiring portion, and the light emitting elements are connected in series via the relay wiring portion within a limited area of the mounting area.
  • the number of connections can be increased.
  • a plurality of light emitting elements can be densely arranged, and a light emitting device with improved power consumption with respect to constant luminance or light emission with respect to constant power consumption. A light-emitting device with improved efficiency can be obtained.
  • the light-emitting device preferably has a configuration in which the plurality of light-emitting elements are electrically connected in series and in parallel with each other by wires.
  • the light emitting device preferably has a configuration in which the reflective resin is formed so as to surround the mounting area.
  • the light reflecting resin so as to surround the periphery of the mounting region, the light toward the periphery of the mounting region of the substrate can also be reflected by the light reflecting resin. Accordingly, loss of emitted light can be reduced, and light extraction efficiency of the light emitting device can be improved.
  • the light emitting device preferably has a configuration in which a metal film is formed on the mounting region, and the plurality of light emitting elements are arranged via the metal film.
  • the light emitting device preferably has a configuration in which the light reflecting resin is formed so as to cover a part of the periphery of the mounting region.
  • the light reflecting resin so as to cover a part of the periphery of the mounting region, a region where the substrate is exposed is formed between the wiring portion and the metal film on the mounting region. None will happen. Therefore, since all the light emitted from the light emitting element can be reflected in the inner region where the light reflecting resin is formed, the loss of the emitted light can be reduced to the maximum, and the light extraction efficiency of the light emitting device can be reduced. Can be further improved.
  • the number of light emitting elements connected in series via the relay wiring portion can be increased and the loss of emitted light can be reduced within a limited area of the mounting area. And a light emitting device with improved light extraction efficiency can be obtained.
  • the p-electrode and the n-electrode (see FIG. 3) of the light-emitting element are arranged at four locations on the mounting area or 6 to indicate the direction of each light-emitting element. Only the portions are illustrated, and illustration is omitted in other portions on the mounting area.
  • the light emitting device 101 according to the first embodiment will be described in detail with reference to FIGS. In the following description, the overall configuration of the light emitting device 101 is described first, and then each configuration is described.
  • the light reflecting resin 6 in FIGS. 2 and 5 is shown in a state in which only the outer shape is shown by lines and transmitted. 6 to 8 described in other embodiments are also shown in a transparent state.
  • the light emitting device 101 is a device used for a lighting device such as an LED bulb, a display device, a display, a backlight light source of a liquid crystal display, or the like. As shown in FIGS. 1, 2, and 4, the light emitting device 101 includes a substrate 1, a plurality of light emitting elements 2 arranged in a mounting region 1 a of the substrate 1, and a positive electrode 3 and a negative electrode 4 formed on the substrate 1. And the relay wiring portion 8 formed separately from the positive electrode 3 and the negative electrode 4, the electronic components such as the light emitting element 2, the positive electrode 3, the negative electrode 4, the relay wiring portion 8 and the light emitting element 2, and the light emitting elements 2 to each other. A wire W to be connected and a light reflecting resin 6 formed on the substrate 1 are provided as main components.
  • the light emitting device 101 has a configuration in which the light reflecting resin 6 is used as a peripheral edge and the sealing member 7 is filled therein.
  • the substrate 1 is for arranging electronic components such as the light emitting element 2. As shown in FIGS. 1 and 2, the substrate 1 is formed in a rectangular flat plate shape. On the substrate 1, a mounting region 1 a for arranging a plurality of light emitting elements 2 is defined as shown in FIG. 2.
  • the size of the substrate 1 is not particularly limited, and can be appropriately selected according to the purpose and application such as the number of the light emitting elements 2.
  • an insulating material is preferably used, and a material that hardly transmits light emitted from the light-emitting element 2, external light, or the like is preferably used. Moreover, it is preferable to use a material having a certain degree of strength. Specific examples include ceramics (Al 2 O 3 , AlN, etc.), phenol resins, epoxy resins, polyimide resins, BT resins (bismaleimide triazine resin), polyphthalamide (PPA), and the like.
  • the mounting area 1 a is an area for arranging a plurality of light emitting elements 2. As shown in FIG. 2, the mounting area 1 a is partitioned into a central area of the substrate 1.
  • the mounting region 1a is formed in a predetermined shape having sides facing each other, and more specifically, is formed in a substantially rectangular shape with rounded corners as shown in FIG.
  • the size of the mounting region 1a is not particularly limited, and can be appropriately selected according to the purpose and application such as the number of light emitting elements 2 and the arrangement interval.
  • a part of the wiring part 3b and a part of the wiring part 4b are formed around the mounting area 1a along the left side of the mounting area 1a in the front view of FIG.
  • a part of the wiring part 4b is formed along the side of the wiring
  • the relay wiring part 8 is formed along the right side of the mounting region 1a.
  • the periphery of the mounting region 1a means a periphery at a predetermined interval from the periphery of the mounting region 1a, as shown in FIG.
  • the mounting region 1a may be a region partitioned on the substrate 1 for arranging the plurality of light emitting elements 2, that is, a region made of the same material as the substrate 1, but for example, reflects light on the mounting region 1a. It is preferable to form a metal film and arrange a plurality of light emitting elements 2 through the metal film. Thus, by forming the metal film on the mounting region 1a and arranging the plurality of light emitting elements 2 thereon, the light emitted from the light emitting element 2 is also directed toward the mounting region 1a of the substrate 1. It can be reflected by the metal film. Accordingly, loss of emitted light can be reduced, and light extraction efficiency of the light emitting device 101 can be improved.
  • the metal film formed on the mounting region 1a is preferably formed by electrolytic plating or electroless plating.
  • the material of the metal film is not particularly limited as long as it can be plated.
  • Ag (silver) or Au (gold) is preferably used, and Ag (silver) is particularly preferably used.
  • Au has a characteristic of easily absorbing light.
  • the light reflectance can be increased by further forming a TiO 2 film on the surface of Au plating.
  • the light extraction efficiency of the light-emitting device 101 can be improved compared to plating with Au alone.
  • the thickness of the metal film formed on the mounting region 1a is not particularly limited and can be appropriately selected according to the purpose and application.
  • a sealing member 7 to be described later is filled in the upper portion of the mounting region 1 a, and the plurality of light emitting elements 2 on the mounting region 1 a and the plurality of light emitting elements 2 are included.
  • the wire W connected to is protected from dust, moisture, external force and the like.
  • the light emitting element 2 is a semiconductor element that emits light by applying a voltage. As shown in FIG. 2, a plurality of light emitting elements 2 are arranged in the mounting region 1 a of the substrate 1, and the plurality of light emitting elements 2 together constitute a light emitting unit 20 of the light emitting device 101.
  • the light emitting element 2 is bonded to the mounting region 1a by a bonding member (not shown).
  • a bonding method for example, a bonding method using resin or solder paste as the bonding member can be used.
  • the illustrated light emitting unit 20 simply indicates a region where the light emitting element 2 is placed, and it is needless to say that light emission in the light emitting unit is light emitted from the light emitting element 2.
  • each of the light emitting elements 2 is formed in a rectangular shape as shown in FIG.
  • the light emitting element 2 is a face-up (FU) element in which a p electrode 2 ⁇ / b> A is provided on one side of the upper surface and an n electrode 2 ⁇ / b> B is provided on the other side of the light emitting element 2.
  • the metal film on which the light emitting element 2 is placed and the metal members constituting the positive electrode 3 and the negative electrode 4 are arranged apart from each other.
  • the n-electrode are preferably mounted on the mounting region 1a where the surface of the light-emitting element 2 opposite to the electrode-forming surface is a metal film. As shown in FIG.
  • the p electrode 2A and the n electrode 2B are auxiliary electrodes for diffusing the current supplied to the light emitting element 2 and the p pad electrode 2Aa and the n pad electrode 2Ba which are electrode terminals.
  • Each of the extending conductive portions 2Ab and 2Bb is provided.
  • the light emitting element at least the p pad electrode 2Aa and the n pad electrode 2Ba need only be on the same surface side, and the extended conductive portions 2Ab and 2Bb need not be provided.
  • the light emitting element 2 has a structure in which a plurality of semiconductor layers including an n-type semiconductor layer and a p-type semiconductor layer are stacked in a side view.
  • a light-emitting diode is preferably used as the light-emitting element 2, and a light-emitting element having an arbitrary wavelength can be selected according to the application.
  • a light-emitting element having an arbitrary wavelength can be selected according to the application.
  • ZnSe a nitride-based semiconductor (In X Al Y Ga 1-XY N, 0 ⁇ X , 0 ⁇ Y, X + Y ⁇ 1), GaP, or the like
  • the red light emitting element 2 (light having a wavelength of 620 nm to 750 nm), GaAlAs, AlInGaP, or the like can be used.
  • a nitride semiconductor In X Al Y Ga 1 capable of emitting light of a short wavelength that can efficiently excite the fluorescent material.
  • -XYN, 0 ⁇ X, 0 ⁇ Y , X + Y ⁇ 1 are preferably used.
  • the component composition, emission color, size, and the like of the light emitting element 2 are not limited to the above, and can be appropriately selected according to the purpose.
  • the light emitting element 2 can also be comprised with the element which outputs not only the light of a visible light range but an ultraviolet-ray and infrared rays. In order to increase the output, the number of light emitting elements 2 is preferably in the range of, for example, 10 or more and 20 to 150.
  • the light emitting elements 2 are arranged at equal intervals in the vertical direction and the horizontal direction on the mounting area 1a. Here, a total of 40 light emitting elements 8 ⁇ 5 horizontal elements are arranged. Yes.
  • the light emitting elements 2 are connected in series by electrically connecting the light emitting elements 2 adjacent to each other in the horizontal direction with respect to the mounting region 1a by a conductive wire W.
  • the series connection means a state in which the p-electrode 2A and the n-electrode 2B in the adjacent light-emitting elements 2 are electrically connected by the wire W as shown in FIG.
  • the light emitting elements 2 are electrically connected by the conductive wires W between the light emitting elements 2 adjacent in the lateral direction with respect to the mounting region 1 a, and are connected not only in series but also in parallel.
  • the parallel connection here means the state in which the p electrodes 2A or the n electrodes 2B in the adjacent light emitting elements 2 are electrically connected by a wire W as shown in FIG.
  • Vf forward voltage drop
  • the light emitting element directly connected with wiring part 3b, 4b and the relay wiring part 8 is shown.
  • the two are preferably not connected in parallel. That is, in the light emitting device 101, the p-electrode 2A of the light emitting element 2 in the first row, first column, and second row, first column on the mounting region 1a directly connected to the wiring portion 3b is not connected in parallel. Further, in the light emitting device 101, the n electrodes 2B of the light emitting elements 2 in the seventh row, first column and the eighth row, first column on the mounting region 1a directly connected to the wiring portion 4b are not connected in parallel.
  • the n-electrodes 2B in the first row, fifth column, second row, fifth column, third row, fifth column, and fourth row, fifth column that are directly connected to the relay wiring portion 8 are connected in parallel. Absent.
  • the p-electrodes 2A in the fifth row, fifth column, the sixth row, fifth column, the seventh row, fifth column, and the eighth row, fifth column that are directly connected to the relay wiring unit 8 are connected in parallel. Absent. Thereby, the load applied by the wire W in the light emitting device 101 can be reduced.
  • the positive electrode 3 and the negative electrode 4 are for electrically connecting electronic components such as the plurality of light emitting elements 2 on the substrate 1 and an external power source (not shown), and applying a voltage from the external power source to these electronic components. belongs to. That is, the positive electrode 3 and the negative electrode 4 play a role as electrodes for energizing from the outside or a part thereof.
  • the positive electrode 3 and the negative electrode 4 are composed of a metal film on the substrate 1 as shown in FIG. As shown in FIG. 2, the positive electrode 3 and the negative electrode 4 have substantially rectangular pad portions (feeding portions) 3a and 4a and linear wiring portions 3b and 4b. The pad portions 3a and 4a The applied voltage is configured to be applied to the light emitting unit 20 including the plurality of light emitting elements 2 through the wiring units 3b and 4b. As shown in FIG. 2, a cathode mark CM indicating the cathode is formed on the wiring portion 4b of the negative electrode 4.
  • the pad portions 3a and 4a are for applying a voltage from an external power source. As shown in FIG. 2, the pad portions 3 a and 4 a are formed as a pair at diagonal positions on the corners on the substrate 1. The pad portions 3a and 4a are electrically connected to an external power source (not shown) by a conductive wire W.
  • the wiring portions 3b and 4b are for transmitting the voltage applied to the pad portions 3a and 4a from the external power source to the light emitting element 2 on the mounting region 1a. As shown in FIG. 2, the wiring portions 3b and 4b are formed so as to extend from the pad portions 3a and 4a, and are formed in a substantially L shape around the mounting region 1a.
  • Au As a material for the metal film constituting the positive electrode 3 and the negative electrode 4. This is because, as will be described later, when Au having excellent thermal conductivity is used as the material of the wire W, the wire W that is the same material can be firmly bonded.
  • the metal film constituting the positive electrode 3 and the negative electrode 4 it is preferable to form the metal film by electrolytic plating or electroless plating in the same manner as the method for forming the metal film on the mounting region 1a.
  • the thickness of the metal film which comprises the positive electrode 3 and the negative electrode 4 is not specifically limited, According to the objectives and uses, such as the number of the wires W, it can select suitably.
  • a part of the wiring portions 3b and 4b is covered with a light reflecting resin 6 to be described later, as shown in FIGS. Therefore, even when the wiring portions 3b and 4b are formed of Au that easily absorbs light as described above, the light emitted from the light emitting element 2 does not reach the wiring portions 3b and 4b and is reflected by light. Reflected by the resin 6. Accordingly, loss of emitted light can be reduced, and light extraction efficiency of the light emitting device 101 can be improved.
  • the wire W can be protected from dust, moisture, external force and the like.
  • the part of the wiring portions 3b and 4b is formed around the mounting region 1a and along the side of the mounting region 1a in the wiring portions 3b and 4b. It means the part that was made.
  • the relay wiring part 8 is for relaying the wiring between the positive electrode 3 and the negative electrode 4. That is, the relay wiring portion 8 is connected to at least one of the plurality of light emitting elements 2 and the p electrode of the light emitting element 2, and is connected to at least one of the plurality of light emitting elements 2 and the n electrode of the light emitting element 2. Thus, the wiring between the positive electrode 3 and the negative electrode 4 is relayed.
  • the relay wiring portion 8 is composed of a metal member on the substrate 1.
  • the relay wiring portion 8 is formed in a straight line around one side of the mounting area 1a, that is, the right side, around the mounting area 1a.
  • the relay wiring portion 8 is covered with a light reflecting resin 6 described later. Therefore, as will be described later, even when Au that easily absorbs light is used as the metal film constituting the relay wiring portion 8, the light emitted from the light emitting element 2 does not reach the relay wiring portion 8. Reflected by the light reflecting resin 6. Accordingly, loss of emitted light can be reduced, and light extraction efficiency of the light emitting device 101 can be improved. Furthermore, by covering the relay wiring part 8 with the light reflecting resin 6, the relay wiring part 8 can be protected from dust, moisture, external force and the like.
  • the material of the metal film constituting the relay wiring portion 8 it is preferable to use Au similarly to the positive electrode 3 and the negative electrode 4. This is because, as will be described later, when Au having excellent thermal conductivity is used as the material of the wire W, the wire W that is the same material can be firmly bonded.
  • the metal film constituting the relay wiring portion 8 As a method for forming the metal film constituting the relay wiring portion 8, it is preferable to form the metal film by electrolytic plating or electroless plating similarly to the positive electrode 3 and the negative electrode 4.
  • the thickness of the metal film which comprises the relay wiring part 8 is not specifically limited, It can select suitably according to the objectives and uses, such as the number of the wires W.
  • the p electrodes 2 ⁇ / b> A of the plurality of light emitting elements 2 are mounted in the mounting region 1 a.
  • the n electrodes 2B of the plurality of light emitting elements 2 are arranged so as to face the right side, which is the other direction of the mounting region 1a.
  • the light emitting element 2 has a right side in which the p electrodes 2A of the plurality of light emitting elements 2 are in the other direction of the mounting region 1a between the wiring part 4b of the negative electrode 4 and the relay wiring part 8.
  • the n electrodes 2B of the plurality of light emitting elements 2 are arranged so as to face the left side, which is one direction of the mounting region 1a. That is, the light emitting element 2 is arranged so that the direction is reversed with respect to the center of the relay wiring portion 8 in the upper group (region) and the lower group (region) in the plan view of FIG. Yes.
  • the relay wiring portion 8 is formed along the periphery of the mounting region 1a in this way, and the light emitting element 2 is turned so that the direction is reversed with the center of the relay wiring portion 8 as a boundary.
  • the number of light emitting elements connected in series can be increased without complicating the wiring for connecting the light emitting elements within the limited area of the mounting region 1a.
  • a plurality of light emitting elements can be densely arranged, and a light emitting device with improved power consumption with respect to constant luminance or light emission with respect to constant power consumption. A light-emitting device with improved efficiency can be obtained.
  • ten light emitting elements 2 are connected in series, and the series connection is formed for four rows.
  • one end of the wiring part 3b and one end of the wiring part 4b are formed adjacent to each other around the mounting region 1a.
  • the wiring portions 3b and 4b of the positive electrode 3 and the negative electrode 4 are formed along the periphery of the mounting region 1a, and one end portions thereof are formed adjacent to each other, so that a plurality of light emitting elements like the light emitting device 101 are formed.
  • a protective element 5 described later can be disposed at an appropriate position. Therefore, it is possible to prevent the voltage between the positive and negative electrodes from becoming equal to or higher than the zener voltage, and to appropriately prevent element destruction and performance deterioration of the light emitting element 2 due to application of an excessive voltage. .
  • the wiring portions 3b and 4b are preferably formed such that one end portions thereof are adjacent to each other within the range of one side of the substantially rectangular mounting region 1a shown in FIG. In this manner, the wiring portions 3b and 4b are formed so as to be adjacent to each other within the range of one side of the mounting region 1a, thereby installing the wires W for electrically connecting the wiring portions 3b and 4b and the light emitting element 2.
  • An area can be secured. Therefore, the number of the light emitting elements 2 connected to the wiring portions 3b and 4b, that is, the number of the light emitting elements 2 serving as the start point and the end point of the series connection can be increased. Can be increased without complicating the wiring connecting the light emitting elements.
  • a plurality of light emitting elements can be densely arranged within a limited area of the mounting area, and power consumption is improved for a certain luminance.
  • a light-emitting device or a light-emitting device with improved light emission efficiency with respect to constant power consumption can be obtained.
  • the light emitting device 102 shown in FIG. 5 may be used as a form in which one end portion of the wiring portion 3b and one end portion of the wiring portion 4b are adjacent to each other around the mounting region 1a.
  • one end portions of the wiring portions 3b and 4b are formed adjacent to each other at the corners of the substantially rectangular mounting region 1a. That is, the wiring part 3b is formed in a substantially L shape so as to extend from the pad part 3a to the corner part of the mounting region 1a.
  • the wiring part 4b is formed in a straight line so as to extend from the pad part 4a to the corner of the mounting region 1a. Note that in the light-emitting device 102 illustrated in FIG. 5, the same components as those of the light-emitting device 101 are denoted by the same reference numerals and description thereof is omitted.
  • the light emitting device 101 includes the positive electrode 3, the negative electrode 4, and the relay wiring portion 8 along the periphery of the mounting region 1 a, and the positive electrode 3, the negative electrode 4, the relay wiring portion 8, and the mounting region 1 a on the substrate 1. And spaced apart.
  • the light emitting device 101 uses a material (for example, Au) that can be firmly bonded to the wire W for the positive electrode 3, the negative electrode 4, and the relay wiring portion 8, and has a light reflectance in the mounting region 1 a. Since it is possible to use a material having a high level (for example, Ag), a highly reliable light-emitting device with improved light extraction efficiency can be obtained.
  • the light reflecting resin 6 is for reflecting the light emitted from the light emitting element 2. As shown in FIG. 2, the light reflecting resin 6 is formed so as to cover a part of the wiring portions 3b and 4b, the relay wiring portion 8, the protective element 5 described later, and the wire W connected thereto. Therefore, even when the wiring portions 3b and 4b, the relay wiring portion 8 and the wire W are formed of Au that easily absorbs light as described above or later, light emitted from the light emitting element 2 is transmitted to the wiring portion 3b. , 4b, the relay wiring portion 8 and the wire W are not reflected and are reflected by the light reflecting resin 6. Accordingly, loss of emitted light can be reduced, and light extraction efficiency of the light emitting device 101 can be improved. Furthermore, by covering a part of the wiring portions 3b and 4b, the relay wiring portion 8, the protection element 5 and the wire W connected thereto with the light reflecting resin 6, these members are protected from dust, moisture, external force and the like. be able to.
  • the light reflecting resin 6 is preferably formed in a square frame shape so as to surround the mounting region 1 a where the light emitting part 20 is formed on the substrate 1.
  • the mounting region 1a of the substrate 1 is, for example, light emitted from the light emitting elements 2 arranged on the left and right sides in FIG.
  • the light directed to the surroundings can also be reflected by the light reflecting resin 6. Accordingly, loss of emitted light can be reduced, and light extraction efficiency of the light emitting device 101 can be improved.
  • the light reflecting resin 6 is preferably formed so as to cover a part of the region that becomes the periphery of the mounting region 1a.
  • the light reflecting resin 6 so as to cover a part of the periphery of the mounting region 1a, a region where the substrate 1 is exposed between the wiring portions 3b and 4b and the metal film on the mounting region 1a is formed. It will not be formed. Therefore, since all the light emitted from the light emitting element 2 can be reflected in the inner region where the light reflecting resin 6 is formed, the loss of the emitted light can be reduced to the maximum, and the light emitted from the light emitting device 101 can be reduced. The taking-out efficiency can be further improved.
  • an insulating material is preferably used as a material of the light reflecting resin 6.
  • a thermosetting resin, a thermoplastic resin, or the like can be used. More specifically, a phenol resin, an epoxy resin, a BT resin, PPA, a silicon resin, etc. are mentioned.
  • a reflective member for example, TiO 2 , Al 2 O 3 , ZrO 2 , MgO or the like that hardly absorbs light from the light-emitting element 2 and has a large refractive index difference with respect to the base resin is used in the base resin. By dispersing this powder, light can be reflected efficiently.
  • the size of the light reflecting resin 6 is not particularly limited, and can be appropriately selected according to the purpose and application.
  • a light reflecting member made of a material different from the resin can be formed at the position of the light reflecting resin 6.
  • the sealing member 7 is a member for protecting the light emitting element 2, the protective element 5, the wire W, and the like disposed on the substrate 1 from dust, moisture, external force, and the like. As shown in FIGS. 1, 2, and 4, the sealing member 7 is formed by filling a resin in the mounting region 1 a surrounded by the light reflecting resin 6 on the substrate 1.
  • the material of the sealing member 7 a material having translucency capable of transmitting light from the light emitting element 2 is preferable.
  • the material include silicon resin, epoxy resin, and urea resin.
  • a colorant, a light diffusing agent, a filler, a fluorescent member, and the like can be contained as desired.
  • the sealing member 7 can be formed as a single member or can be formed as a plurality of layers of two or more layers.
  • the filling amount of the sealing member 7 may be an amount that covers the light emitting element 2, the protective element 5, the wire W, and the like disposed in the mounting region 1 a surrounded by the light reflecting resin 6. Further, when the sealing member 7 has a lens function, the surface of the sealing member 7 may be raised so as to have a bullet shape or a convex lens shape.
  • the sealing member 7 may include a fluorescent member that emits light having a different wavelength by absorbing at least a part of the light from the light emitting element 2 as a wavelength conversion member.
  • the fluorescent member one that converts light from the light emitting element 2 into a longer wavelength is preferable.
  • the fluorescent member may be formed as a single layer of one type of fluorescent material or may be formed as a single layer by mixing two or more types of fluorescent materials.
  • two or more single layers containing one kind of fluorescent substance or the like may be laminated, or two or more single layers each containing two or more kinds of fluorescent substances may be laminated.
  • a YAG phosphor mixed with yttrium, aluminum and garnet a nitride phosphor or an oxynitride phosphor mainly activated by a lanthanoid element such as Eu or Ce is used. be able to.
  • the wire W is a conductive wiring for electrically connecting electronic components such as the light emitting element 2 and a protective element 5 described later to the positive electrode 3, the negative electrode 4, the relay wiring portion 8, and the like.
  • Examples of the material of the wire W include those using metals such as Au, Cu (copper), Pt (platinum), and Al (aluminum), and alloys thereof, and in particular, excellent in thermal conductivity and the like. It is preferable to use Au.
  • the diameter of the wire W is not specifically limited, It can select suitably according to the objective and a use.
  • connection portion between the wire W and the positive electrode 3, the negative electrode 4, and the relay wiring portion 8 is covered with a light reflecting resin 6, as shown in FIG. Therefore, as described above, even when Au, which easily absorbs light, is used as the material constituting the wire W, the light emitted from the light emitting element 2 is not absorbed by the wire W, but the light reflecting resin 6 Is reflected by. Accordingly, loss of emitted light can be reduced, and light extraction efficiency of the light emitting device 101 can be improved. Furthermore, by covering the connection portion between the wire W and the positive electrode 3, the negative electrode 4, and the relay wiring portion 8 with the light reflecting resin 6, the wire W can be protected from dust, moisture, external force, and the like.
  • the protection element 5 is formed as an element for protecting the light emitting unit 20 composed of the plurality of light emitting elements 2 from element destruction and performance deterioration due to excessive voltage application. As shown in FIG. 2, the protective element 5 is disposed at one end of the wiring portion 3 b of the positive electrode 3 and is connected to one end of the wiring portion 4 b of the negative electrode 4 by a wire. However, the protective element 5 may be disposed at one end of the wiring portion 4b of the negative electrode 4 and connected to one end of the wiring portion 3b of the positive electrode 3 by a wire.
  • the protection element 5 is configured by a Zener diode that is energized when a voltage higher than a specified voltage is applied.
  • the protective element 5 is a semiconductor element having a p-electrode and an n-electrode like the light-emitting element 2 described above, and is antiparallel to the p-electrode 2A and the n-electrode 2B of the light-emitting element 2.
  • the wire W is electrically connected to the wiring portion 4 b of the negative electrode 4.
  • the light emitting element 2 cannot be disposed in the vicinity of the place where the protective element 5 is embedded. Therefore, the light emitting element 2 in the fourth row and the first column closest to the protection element 5 is connected by a wire W to a place away from the area where the protection element 5 is embedded, as shown in FIG.
  • the protective element 5 Due to the presence of the protective element 5, even if an excessive voltage is applied between the positive electrode 3 and the negative electrode 4 and the voltage exceeds the Zener voltage of the Zener diode, the Zener voltage between the positive and negative electrodes of the light emitting element 2 is maintained. And does not exceed this Zener voltage. Therefore, by providing the protective element 5, it is possible to prevent the voltage between the positive and negative electrodes from becoming a Zener voltage or higher, and the occurrence of element destruction or performance deterioration of the light emitting element 2 due to application of an excessive voltage. Can be prevented appropriately.
  • the protective element 5 is covered with a light reflecting resin 6 as shown in FIG. Therefore, the protection element 5 and the wire W connected to the protection element 5 are protected from dust, moisture, external force, and the like.
  • the size of the protective element 5 is not particularly limited, and can be appropriately selected according to the purpose and application.
  • the light from the light emitting element 2 is extracted efficiently. Further, since the light emitting device 101 can increase the number of light emitting elements 2 connected in series by the relay wiring unit 8, the power consumption can be improved for a certain luminance, or the constant power consumption can be increased. Luminous efficiency can be improved. Therefore, the light-emitting device 101 can have a configuration suitable for power supplies with various capacities and output voltages.
  • the manufacturing method of the light emitting device 101 includes a substrate manufacturing process, a plating process, a die bonding process, a wire bonding process, and a light reflecting resin forming process. Moreover, you may include the sealing member filling process after the light reflection resin formation process. Furthermore, a protection element joining process is included here. Hereinafter, each step will be described. Note that since the configuration of the light emitting device 101 is as described above, the description thereof will be omitted as appropriate.
  • substrate preparation process is a process of producing the board
  • the mounting region 1a on the substrate 1 and the portions to be the positive electrode 3 and the negative electrode 4 are formed by patterning into a predetermined shape. Further, in the substrate manufacturing process, a plating wiring for forming a metal film on the mounting region 1a on the substrate 1 is formed by electrolytic plating.
  • the plating step is a step of forming at least the positive electrode 3, the negative electrode 4 and the relay wiring portion 8 on the substrate 1 on which the plated wiring is formed, and preferably the positive electrode 3 and the negative electrode 4 by electroless plating. And forming a metal film on the mounting region 1a on the substrate 1 by electrolytic plating.
  • a method in which a metal film on the mounting region 1a is not formed a method in which Au plating is performed on the positive electrode 3, the negative electrode 4, and the relay wiring portion 8 and Ag plating is performed on the mounting region 1a.
  • the die bonding step is a step of placing the light emitting element 2 on the metal film.
  • the light emitting element placement step for placing the light emitting element 2 on the metal film on the substrate 1 via the joining member, and after the light emitting element 2 is placed, the joining member is heated, A heating step of bonding 2 to a metal film on the substrate 1.
  • the protective element joining step is a step of placing the protective element 5 on the wiring portion 3b of the positive electrode 3 and joining them. Since the method for mounting and bonding the protective element 5 is the same as that in the die bonding step, description thereof is omitted here.
  • the wire bonding step is a step of electrically connecting the wiring portion 3b of the positive electrode 3 of the metal member and the p pad electrode 2Aa above the light emitting element 2 with the wire W after the die bonding step. Similarly, this is a step of electrically connecting the n pad electrode 2Ba above the light emitting element 2 and the wiring portion 4b of the negative electrode 4 of the metal member with a wire W. Further, in this step, the plurality of light emitting elements 2 are connected through the p pad electrode 2Aa and the n pad electrode 2Ba, respectively. Further, the electrical connection between the protective element 5 and the negative electrode 4 may be performed in this step. That is, the n electrode of the protection element 5 and the wiring part 4 b of the negative electrode 4 are connected by the wire W. In addition, the connection method of the wire W is not specifically limited, What is necessary is just to perform by the method used normally.
  • the light reflecting resin forming step is a step of forming the light reflecting resin 6 so as to cover at least a part of the wiring portions 3b and 4b and the relay wiring portion 8 along the peripheral edge of the mounting region 1a after the wire bonding step. It is.
  • the light reflecting resin 6 can be formed by using, for example, a resin discharge device that can move (movable) in the vertical direction or the horizontal direction with respect to the substrate 1 above the fixed substrate 1 (see FIG. (See JP2009-182307).
  • the sealing member filling step is a step of filling a light-transmitting sealing member 7 covering the light emitting element 2 and the metal film inside the light reflecting resin 6. That is, the sealing member 7 that covers the light emitting element 2, the protective element 5, the metal film on the mounting region 1 a, the wire W, and the like is formed inside the wall portion made of the light reflecting resin 6 formed on the substrate 1. Is then cured by heating, light irradiation, or the like.
  • the light emitting device 103 according to the second embodiment will be described in detail with reference to FIG.
  • the light emitting device 103 is provided with two relay wiring portions 8a and 8b, and the light emitting device 101 according to the first embodiment described above except that the light emitting element 2 is appropriately arranged in the mounting region 1a. It has the same configuration as Therefore, the same components as those of the light emitting device 101 described above are denoted by the same reference numerals and description thereof is omitted.
  • the light emitting device 103 has the same overall configuration (FIG. 1) and light emitting element configuration (FIG. 3) as the above-described light emitting device 101, and thus description thereof is also omitted.
  • the light emitting device 103 is provided with two relay wiring portions, and a part of the plurality of light emitting elements 2 is arranged between two relay wiring portions 8a and 8b. Specifically, in the space between the wiring portion 3b of the positive electrode 3 and the relay wiring portion 8a (hereinafter sometimes referred to as the first relay wiring portion 8a) (the region indicated by 11 in FIG. 6), a plurality of The p electrodes 2A of the light emitting elements 2 are arranged so as to face the left side, which is one direction of the mounting region 1a.
  • the light emitting device 103 is connected to a relay wiring portion (first relay wiring portion) 8a and a relay wiring portion 8b (hereinafter, sometimes referred to as a second relay wiring portion 8b) different from the relay wiring portion 8a.
  • the p electrodes 2A of the plurality of light emitting elements 2 are arranged so as to face the right side, which is the other direction of the mounting region 1a.
  • the light emitting device 103 includes p electrodes of a plurality of light emitting elements 2 between the relay wiring portion (second relay wiring portion) 8b and the wiring portion 4b of the negative electrode 4 (a region indicated by 13 in FIG. 6). 2A is arranged so as to face the left side which is one direction of the mounting area 1a.
  • the light emitting element 2 is arranged so that the direction is reversed with the first relay wiring portion 8a as a boundary and the second relay wiring portion 8b as a boundary when FIG. 6 is viewed in plan. That is, on the mounting area 1a, by providing one each of the areas 11 and 13 where the wiring parts 3b and 4b and the relay wiring part face each other and increasing the number of areas 12 where the relay wiring parts face each other, In addition, the number of light emitting elements connected in series and the number of series connected columns can be increased.
  • the number of light emitting elements 2 connected in series is increased within a limited area of the mounting region 1a. be able to. Furthermore, within a limited area of the mounting region 1a, a plurality of light emitting elements 2 can be densely arranged, and a light emitting device with improved power consumption with respect to constant luminance, or with respect to constant power consumption. Thus, a light emitting device with improved luminous efficiency can be obtained.
  • the first relay wiring portion 8a and the second relay wiring are also connected in series with the portion 8b, and the six light emitting elements 2 are also connected in series between the second relay wiring portion 8b and the wiring portion 4b.
  • 18 light emitting elements 2 are connected in series.
  • the number Y of relay wiring portions (having at least one relay wiring portion, where Y is positive)
  • the light emitting device 104 includes a protective element wiring portion 9 for connecting the protective element 5 and the protective element, and other than the arrangement state of the light emitting elements 2 and the connection state of the wires W connected to the light emitting elements 2.
  • the light-emitting device 104 has the same overall configuration (FIG. 1) and light-emitting element configuration (FIG. 2B) as the above-described light-emitting device 101, and thus description thereof is also omitted.
  • the light emitting device 104 is obtained by providing the protective element 5 to the light emitting device 103 according to the second embodiment.
  • a protective element 5 made of a Zener diode is formed on the wiring part 3b of the positive electrode 3, and is used to electrically connect the protective element 5 to the negative electrode 4 around the mounting region 1a and further outside the relay wiring part 8a.
  • the protection element wiring part 9 is provided, and the protection element 5 and the protection element wiring part 9 are connected by a wire W, and the protection element wiring part 9 and the wiring part 4b of the negative electrode 4 are connected by a wire W, respectively.
  • the protective element 5, the protective element wiring portion 9, and the wire W connected thereto are covered with the light reflective resin 6.
  • These members can also be protected from dust, moisture, external force, etc. by covering them with the light-reflective resin 6 that covers the wiring parts 3b, 4b and the relay wiring parts 8a, 8b.
  • the protective element wiring portion 9 is formed of the same metal material as the positive electrode 3, the negative electrode 4, and the relay wiring portions 8a and 8b, and may be formed of the same metal material or provided in the same process in the manufacturing method. Good.
  • the protective element 5 is provided in the wiring part 4b of the negative electrode 4, and the protective element 5 and the protective element wiring part 9 are connected by the wire W, and the protective element wiring part 9 and the wiring part 3b of the positive electrode 3 are connected by the wire W, respectively. May be. Furthermore, the protection element 5 is provided on the protection element wiring part 9, and either one of the wiring parts 3 b and 4 b of the positive electrode 3 and the negative electrode 4 is connected to the protection element 5, and the other is connected to the protection element wiring part 9. It may be connected.
  • the protection element wiring portion 9 may be exposed only in a region connected to any one of the wiring portions 4a and 4b and the protection element 5 with a wire, and the other may be wired inside the substrate 1.
  • the protection element wiring portion 9 of the protection element 5 provided on the wiring portion 3b of the positive electrode 3 and a region 9a connected by a wire and the wiring portion 4b of the negative electrode 4 and a region 9b connected by a wire are provided. It only needs to be exposed.
  • the plurality of light emitting elements 2 are arranged such that all the light emitting elements 2 face the upper side where the p-electrode 2A is one direction of the mounting region 1a, or the n-electrode 2B is other than the mounting region 1a. It is arranged so as to face the lower side which is the direction.
  • the light-emitting device 104 of Embodiment 3 includes a region 11 and a region 13 arranged so that the p-electrode 2A (see FIG. 2) of the light-emitting element faces the right side of the mounting region 1a, and the p-electrode 2A of the light-emitting element (see FIG. 2).
  • the light emitting elements 2 Is different from the arrangement of the light emitting elements 2 in the light emitting device 103 of the second embodiment, in which the area 12 arranged so as to face the left side of the mounting area 1a is mixed. They are arranged in a state rotated 90 degrees on the mounting area 1a.
  • the light emitting elements 2 are preferably arranged as in the light emitting device 103 of the second embodiment and the light emitting device 101 of the first embodiment.
  • the light emitting elements 2 can be arranged as in the third embodiment.
  • eight light emitting elements 2 are connected in series in two rows between the wiring portions 3b and 4b and the relay wiring portions 8a and 8b. Are connected in parallel.
  • the light emitting device 105 according to the fifth embodiment will be described in detail with reference to FIG.
  • the light emitting device 105 is substantially the same as the light emitting device 101 according to the first embodiment except for the shape of the mounting region 1a, the shapes of the wiring portions 3b and 4b, and the shape of the relay wiring portion 8. It has a configuration. Therefore, the same components as those of the light emitting device 101 described above are denoted by the same reference numerals and description thereof is omitted.
  • the light emitting device 105 has the same configuration of the light emitting element (FIG. 3) as that of the light emitting device 101 described above, and thus description thereof is also omitted.
  • the mounting region 1a formed in a substantially rectangular shape in the light emitting device 101 is formed in a circular shape as shown in FIG.
  • a plurality of light emitting elements 2 are arranged at equal intervals in the vertical direction and the horizontal direction, respectively.
  • the plurality of light emitting elements 2 are arranged in a maximum of 10 and a minimum of 3 in the vertical direction, and a maximum of 14 and a minimum of 6 in the horizontal direction.
  • a total of 110 are arranged. Further, as shown in FIG.
  • the wiring portions 3 b and 4 b of the positive electrode 3 and the negative electrode 4 are formed along the periphery of the circular mounting region, and the respective one end portions are formed adjacent to each other. .
  • the relay wiring part 8 is also formed along the circumference
  • the light reflecting resin 6 is formed in a circular shape so as to surround the mounting region 1 a where the light emitting portion 20 is formed on the base material 1. Further, the light reflecting resin 6 is formed so as to cover a part of the wiring portions 3b and 4b, the protection element 5 and the wire W connected thereto.
  • symbol AM is an anode mark which shows that the pad part 3a is the positive electrode 3
  • symbol 30 is the metal film formed on the mounting area
  • symbol 70 is the recognition mark for recognizing the bonding position of the light emitting element 2.
  • Reference numeral 80 denotes a temperature measurement point of the light emitting device 105, which is also formed by plating or the like.
  • the wiring portions 3b and 4b of the positive electrode 3 and the negative electrode 4 are formed along the circumference of the circular mounting region 1a, and the center line CL1 is connected via the relay wiring portion 8.
  • the left and right light emitting elements 2 are connected in series, and one end portions of the wiring portions 3b and 4b are formed adjacent to each other, whereby a plurality of light emitting elements 2 are formed in a circular mounting region 1a on the substrate 1 like the light emitting device 105. Even if it is a case where it arrange
  • the light-emitting device 105 can prevent the voltage between the positive and negative electrodes from becoming equal to or higher than the zener voltage, and can appropriately prevent element destruction and performance deterioration of the light-emitting element 2 due to application of an excessive voltage. Can be prevented.
  • the arrangement of the light emitting elements 2 in Embodiment 3 can be applied to the light emitting devices of Embodiment 1 or 2, and the light emitting elements 2 in Embodiment 1 or 2 are applicable. It is also possible to apply this arrangement to the light emitting device of Embodiment 3. Further, the protective element wiring portion 9 in the third embodiment can be applied to the light emitting device of the second embodiment.
  • the light emitting device according to the present invention has been specifically described with reference to the embodiments for carrying out the invention. However, the gist of the present invention is not limited to these descriptions, and is widely interpreted based on the description of the claims. It must be. Needless to say, various changes and modifications based on these descriptions are also included in the spirit of the present invention.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un dispositif émetteur de lumière (101) comprenant : un substrat (1) ; une section émettrice de lumière (20) composée d'une pluralité d'éléments émetteurs de lumière (2) disposée sur une surface de montage sur le substrat ; une électrode positive (3) et une électrode négative (4), toutes deux équipées d'une section de plot (3a) et d'une section de câblage (3b), qui appliquent une tension aux éléments émetteurs de lumière par la section de câblage ; et une résine réfléchissant la lumière (6) formée sur le substrat de manière à recouvrir au moins la section de câblage. Une section de câblage relais (8) est formée autour du périmètre de la surface de montage, recouvrant la résine réfléchissant la lumière.
PCT/JP2011/058423 2010-04-16 2011-04-01 Dispositif émetteur de lumière WO2011129203A1 (fr)

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JP2010095237A JP2013140823A (ja) 2010-04-16 2010-04-16 発光装置

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CN102543985A (zh) * 2011-12-09 2012-07-04 日月光半导体制造股份有限公司 半导体封装件及其半导体基板结构
WO2013150882A1 (fr) * 2012-04-06 2013-10-10 シチズン電子株式会社 Appareil électroluminescent à del
EP2643862A4 (fr) * 2010-11-22 2015-05-27 Cree Inc Dispositifs émettant de la lumière et procédés
US9194567B2 (en) 2011-02-16 2015-11-24 Cree, Inc. High voltage array light emitting diode (LED) devices and fixtures
DE102015113640A1 (de) 2014-09-12 2016-03-17 Panasonic Intellectual Property Management Co., Ltd. Licht emittierende Vorrichtung und Leuchtvorrichtung
US9300062B2 (en) 2010-11-22 2016-03-29 Cree, Inc. Attachment devices and methods for light emitting devices
US9490235B2 (en) 2010-11-22 2016-11-08 Cree, Inc. Light emitting devices, systems, and methods
JP2017073576A (ja) * 2017-01-25 2017-04-13 シチズン時計株式会社 Ｌｅｄパッケージ
USD823492S1 (en) 2016-10-04 2018-07-17 Cree, Inc. Light emitting device
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
US10222032B2 (en) 2012-03-30 2019-03-05 Cree, Inc. Light emitter components and methods having improved electrical contacts
US11004890B2 (en) 2012-03-30 2021-05-11 Creeled, Inc. Substrate based light emitter devices, components, and related methods

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JP6695114B2 (ja) * 2015-08-31 2020-05-20 シチズン電子株式会社 発光装置
DE102016103819A1 (de) * 2016-03-03 2017-09-07 Heraeus Deutschland GmbH & Co. KG Anschlussträger, optoelektronisches Bauteil und Verfahren zur Herstellung eines Anschlussträgers oder eines optoelektronischen Bauteils

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WO2008069204A1 (fr) * 2006-12-04 2008-06-12 Alps Electric Co., Ltd. Dispositif d'émission de lumière et projecteur
JP2009164157A (ja) * 2007-12-28 2009-07-23 Nichia Corp 発光装置

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WO2008069204A1 (fr) * 2006-12-04 2008-06-12 Alps Electric Co., Ltd. Dispositif d'émission de lumière et projecteur
JP2009164157A (ja) * 2007-12-28 2009-07-23 Nichia Corp 発光装置

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9300062B2 (en) 2010-11-22 2016-03-29 Cree, Inc. Attachment devices and methods for light emitting devices
US9490235B2 (en) 2010-11-22 2016-11-08 Cree, Inc. Light emitting devices, systems, and methods
EP2643862A4 (fr) * 2010-11-22 2015-05-27 Cree Inc Dispositifs émettant de la lumière et procédés
US9194567B2 (en) 2011-02-16 2015-11-24 Cree, Inc. High voltage array light emitting diode (LED) devices and fixtures
CN102543985A (zh) * 2011-12-09 2012-07-04 日月光半导体制造股份有限公司 半导体封装件及其半导体基板结构
US10134961B2 (en) 2012-03-30 2018-11-20 Cree, Inc. Submount based surface mount device (SMD) light emitter components and methods
US10222032B2 (en) 2012-03-30 2019-03-05 Cree, Inc. Light emitter components and methods having improved electrical contacts
US11004890B2 (en) 2012-03-30 2021-05-11 Creeled, Inc. Substrate based light emitter devices, components, and related methods
JPWO2013150882A1 (ja) * 2012-04-06 2015-12-17 シチズン電子株式会社 Ｌｅｄ発光装置
WO2013150882A1 (fr) * 2012-04-06 2013-10-10 シチズン電子株式会社 Appareil électroluminescent à del
DE102015113640A1 (de) 2014-09-12 2016-03-17 Panasonic Intellectual Property Management Co., Ltd. Licht emittierende Vorrichtung und Leuchtvorrichtung
US9966509B2 (en) 2014-09-12 2018-05-08 Panasonic Intellectual Property Management Co., Ltd. Light emitting apparatus and lighting apparatus
USD823492S1 (en) 2016-10-04 2018-07-17 Cree, Inc. Light emitting device
JP2017073576A (ja) * 2017-01-25 2017-04-13 シチズン時計株式会社 Ｌｅｄパッケージ

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TW201203632A (en) 2012-01-16

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