WO2011102486A1 - 露光装置用レーザ装置 - Google Patents
露光装置用レーザ装置 Download PDFInfo
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- WO2011102486A1 WO2011102486A1 PCT/JP2011/053566 JP2011053566W WO2011102486A1 WO 2011102486 A1 WO2011102486 A1 WO 2011102486A1 JP 2011053566 W JP2011053566 W JP 2011053566W WO 2011102486 A1 WO2011102486 A1 WO 2011102486A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/131—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/134—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the active medium, e.g. by controlling the processes or apparatus for excitation in gas lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2316—Cascaded amplifiers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2366—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media comprising a gas as the active medium
Definitions
- This disclosure relates to a laser device for an exposure apparatus.
- a discharge laser of either MOPA type or MOPO type having a seed laser and at least one gas discharge excitation type amplification stage that inputs and amplifies and outputs the output light of the seed laser is provided.
- a laser apparatus for an exposure apparatus includes a MOPA system and a MOPO system having a seed laser and at least one gas discharge excitation type amplification stage that inputs and amplifies and outputs the output light of the seed laser.
- the energy of the laser output light from the discharge excitation gas laser device is discontinuously changed according to a request from the discharge excitation gas laser device and the exposure device, at least the total pressure of the laser gas in the amplification stage
- FIG. 1 schematically shows a configuration of a laser apparatus for an exposure apparatus that is Embodiment 1 of the present disclosure.
- FIG. 2 shows each voltage dependency of laser output energy and laser output energy variation.
- FIG. 3 shows a control range by voltage control.
- FIG. 4 is a flowchart showing a control processing procedure of the voltage HV value by the laser controller C.
- FIG. 5 is a flowchart showing a gas total pressure change processing procedure when the target energy is changed by the laser gas control device and the laser power supply control device according to the first embodiment of the present disclosure.
- FIG. 6 shows the fluorine gas partial pressure dependence of the laser output energy variation with the voltage as a parameter.
- FIG. 7 is a timing chart when changing from 60 W to 90 W according to the first embodiment of the present disclosure.
- FIG. 8 is a timing chart when changing from 90 W to 60 W according to the first embodiment of the present disclosure.
- FIG. 9 is a flowchart showing a gas total pressure change processing procedure when the target energy is changed by the laser gas control apparatus according to the first modification of the first embodiment of the present disclosure.
- FIG. 10 is a timing chart when changing from 60 W to 90 W according to the first modification of the first embodiment of the present disclosure.
- FIG. 11 is a timing chart when changing from 90 W to 60 W according to the first modification of the first embodiment of the present disclosure.
- FIG. 12 is a flowchart illustrating a voltage HV value change processing procedure when the target energy is changed by the laser power supply control apparatus according to the second modification of the first embodiment of the present disclosure.
- FIG. 13 is a timing chart when changing from 60 W to 90 W according to the second modification of the first embodiment of the present disclosure.
- FIG. 14 is a timing chart when changing from 90 W to 60 W according to the second modification of the first embodiment of the present disclosure.
- FIG. 15 is a flowchart showing a gas total pressure change processing procedure when the target energy is changed by the laser gas control apparatus according to the third modification of the first embodiment of the present disclosure.
- FIG. 16 is a flowchart showing a procedure of the gas exchange process shown in FIG.
- FIG. 17 is a timing chart when changing from 60 W to 90 W according to the third modification of the first embodiment of the present disclosure.
- FIG. 18 is a timing chart when changing from 90 W to 60 W according to the third modification of the first embodiment of the present disclosure.
- FIG. 15 is a flowchart showing a gas total pressure change processing procedure when the target energy is changed by the laser gas control apparatus according to the third modification of the first embodiment of the present disclosure.
- FIG. 16 is a flowchart showing
- FIG. 19 is a flowchart showing a gas total pressure change processing procedure at the time of target energy change by the exposure apparatus laser apparatus according to the second embodiment of the present disclosure.
- FIG. 20 is a flowchart showing the processing procedure of the parameter setting subroutine.
- FIG. 21 is a flowchart showing the processing procedure of the laser control subroutine.
- FIG. 22 is a flowchart showing the processing procedure of the switching setting subroutine.
- FIG. 23 is a flowchart showing the processing procedure of the parameter calculation subroutine.
- FIG. 24 shows the pulse energy dependence of the laser gas pressure.
- FIG. 25 is a flowchart showing a processing procedure showing a laser gas control subroutine.
- FIG. 26 is a flowchart showing the processing procedure of the parameter calculation subroutine.
- FIG. 20 is a flowchart showing the processing procedure of the parameter setting subroutine.
- FIG. 21 is a flowchart showing the processing procedure of the laser control subroutine.
- FIG. 22 is a flowchar
- FIG. 27 shows the pulse energy dependence of the laser gas pressure with the laser gas pressure before switching as a parameter.
- FIG. 28 schematically shows a configuration of an exposure apparatus laser apparatus according to Embodiment 3 of the present disclosure.
- FIG. 29 is a flowchart showing the processing procedure of the parameter calculation subroutine.
- FIG. 30 shows the pulse energy dependence of the fluorine partial pressure.
- FIG. 31 is a flowchart showing the processing procedure of the laser gas control subroutine.
- FIG. 32 is a flowchart showing the processing procedure of the parameter calculation subroutine.
- FIG. 33 schematically shows a configuration of a laser apparatus for an exposure apparatus that is the fourth embodiment of the present disclosure. The structure of the amplification stage shown in FIG. 34 is shown.
- FIG. 34 The structure of the amplification stage shown in FIG. 34 is shown.
- FIG. 35 is a flowchart showing a control processing procedure to the dynamic switching mechanism by the laser controller.
- FIG. 36 schematically shows a configuration of a dynamic range switching mechanism in the exposure apparatus laser apparatus according to the fifth embodiment of the present disclosure.
- FIG. 37 schematically shows another configuration of the dynamic range switching mechanism in the laser apparatus for exposure apparatus according to the fifth embodiment of the present disclosure.
- FIG. 1 schematically shows a configuration of a laser apparatus for an exposure apparatus that is Embodiment 1 of the present disclosure.
- the exposure apparatus laser apparatus includes a seed laser 1 and at least one gas discharge excitation type amplification stage 2 that inputs, amplifies, and outputs the output light of the seed laser 1.
- It is a discharge excitation type gas laser device of the MOPA (Master Oscillator Power Amplifier) type or the MOPO (Master Oscillator Power Oscillator) type.
- the MOPA method is a method in which no resonator is provided in the amplification stage 2.
- the MOPO method is also called an injection lock method, and is a method in which a resonator is provided in the amplification stage 2.
- the seed laser 1 and the amplification stage 2 may be coupled by an optical system having at least two high reflection mirrors 31 and 32.
- the exposure apparatus laser apparatus may include a laser controller C that transmits and receives control signals to and from the exposure apparatus controller C100 of the exposure apparatus 100 and controls the exposure apparatus laser apparatus as a whole.
- the laser controller C may be connected to the laser power controller 3 and the laser gas controller 4.
- the laser power supply control device 3 may be connected to the MO power supply 12 that is the power supply of the seed laser 1 and the PO power supply 22 that is the power supply of the amplification stage 2.
- the MO power source 12 and the PO power source 22 may be pulse power sources.
- a pulse power source mainly includes a charger and a pulse compression circuit. Then, the laser power supply control device 3 may generate a power supply voltage so as to output a laser beam having the energy requested from the exposure apparatus 100, thereby causing the laser device to oscillate in burst.
- the laser gas control device 4 may control the laser gas pressure in the chamber 11 of the seed laser 1 and the laser gas pressure in the chamber 21 of the amplification stage 2.
- the laser power source control device 3 exposes the excitation intensity of the discharge electrode 23 of the amplification stage 2 when the laser output energy is discontinuously changed according to a command from the exposure device 100. It changes according to the energy requested
- FIG. When the command d for changing the output energy of the laser discontinuously is output from the exposure apparatus 100, the laser controller C receiving the command d gives the command c to the laser power supply control device 3.
- the laser power supply control device 3 that has received the command c controls at least one of the MO power supply 12 and the PO power supply 22. With this control, the MO power source 12 may apply a voltage between the electrodes of the pair of discharge electrodes 13.
- the PO power source 22 may apply a voltage between the electrodes of the pair of discharge electrodes 23.
- Gas control by the laser gas control device 4 may be performed when a command d for changing the output energy of the laser discontinuously is output from the exposure apparatus 100.
- the gas control is to change the total pressure of the laser gas in the amplification stage 2 in accordance with the energy requested from the exposure apparatus 100. Note that only one or both of the control by the laser power supply control device 3 and the laser gas control device 4 may be performed.
- the seed laser 1 may be a gas discharge excitation laser or a solid-state laser.
- the seed laser 1 When the seed laser 1 is a gas discharge excitation type laser, the seed laser 1 outputs to the outside a chamber 11 that encloses a laser gas, an MO power source 12, and a part of light generated in the chamber 11 when the laser gas is excited.
- a resonator that resonates the remainder via the chamber 11 may be provided. This resonator is formed between the narrow-band module 15 including the magnifying prism 15 a and the grating 15 b and the output coupling mirror 14.
- the chamber 11 may include a pair of discharge electrodes 13 that excite laser gas to form a gain region. A charging voltage is applied from the MO power source 12 between the electrodes of the pair of discharge electrodes 13.
- the amplification stage 2 may be a gas discharge excitation type laser.
- the amplification stage 2 outputs a part of the light generated in the chamber 21 in response to the excitation of the laser gas, the chamber 21 enclosing the laser gas, the PO power source 22, and the resonance that causes the rest to resonate through the chamber 21. May be provided.
- This resonator is formed between the rear mirror 25 and the front mirror 24.
- FIG. 1 shows an example of a Fabry-Perot resonator in which a planar rear mirror 25 and a planar front mirror 24 are arranged in parallel.
- the chamber 21 may include a pair of discharge electrodes 23 that excite laser gas to form a gain region. A voltage is applied from the PO power source 22 between the pair of discharge electrodes 23.
- the laser gas in the chambers 11 and 21 is a composition gas (Kr gas and F2 gas in the case of KrF, Ar gas and F2 gas in the case of ArF), and dilution buffer gas (Ne or He gas). But you can.
- An energy sensor unit 40 may be provided in the optical path on the laser beam emission side of the amplification stage 2.
- the energy sensor unit 40 includes a beam splitter 41 that extracts a part of the output laser light L, an optical sensor 43 such as a photodiode, and a condensing lens 42 that condenses the light from the beam splitter 41 onto the optical sensor 43. May be.
- the energy sensor unit 40 may detect the energy of the laser light reflected from the laser light L by the beam splitter 41.
- a shutter 50 that prevents the output laser light L from entering the exposure apparatus 100 side may be provided between the exposure apparatus 100 and the beam splitter 41.
- the shutter 50 may be closed at the time of adjustment oscillation, which will be described later, such as when the output energy of the laser is discontinuously changed by a command from the exposure apparatus 100.
- a laser gas cylinder 60 and an exhaust device 61 may be connected to the laser gas control device 4. These connecting pipes may each be provided with an injection valve and an exhaust valve (not shown).
- the laser gas cylinder 60 may supply laser gas to the chambers 11 and 21 via the laser gas control device 4.
- the exhaust device 61 may exhaust the laser gas from the chambers 11 and 21 via the laser gas control device 4.
- the laser gas control device 4 and the laser power source control device 3 are used to change the output energy of the laser discontinuously according to a command from the exposure apparatus 100.
- an adjustment oscillation sequence for changing the total pressure and voltage HV value of the laser gas in the amplification stage 2 is performed.
- the discontinuous change is to increase the energy of the output laser light L
- the amplification factor of the amplification stage is increased without changing the output light energy of the seed laser 1.
- the variable range of the laser output energy E becomes small. That is, in general, in order to make the laser output energy variation ⁇ substantially constant in the exposure apparatus, the laser output energy E can be changed only by about ⁇ 10 W of the center output (nominal energy). If the laser output energy E is changed beyond the range, the laser output energy variation ⁇ becomes large and cannot be used as a light source for semiconductor exposure.
- the laser output energy variation ⁇ is ignored, if the voltage HV value is decreased, laser oscillation does not occur below a certain value, so that the required dynamic range cannot be obtained.
- the voltage HV value is decreased, the laser output energy variation ⁇ increases because the discharge becomes unstable and a uniform gain region cannot be secured.
- the laser output energy variation (oscillation pulse energy variation) ⁇ increases and the allowable range is reached. May be exceeded.
- the allowable range regarding the laser output energy variation ⁇ is relatively wide in the current laser manufactured by Gigaphoton.
- Fig. 3 shows an example of the required dynamic range of the laser output.
- a laser output within a range of about 90 to 60 W is required.
- the dynamic range when the output is changed with the voltage HV value is, for example, a range a of about 90 ⁇ 10 W for a laser of 90 W operation, and a range b of about 60 ⁇ 10 W for a laser of 60 W operation.
- the required dynamic range is not reached. For this reason, it is difficult to cope with the voltage HV value and the gas composition.
- the gas pressure is a control parameter that is relatively insensitive to the laser output energy variation ⁇ . For this reason, by making the gas pressure variable in the operating gas pressure range, it is possible to stably output 90 W to 60 W nominal energy and ⁇ 10 W before and after that.
- the laser controller C receives the nominal energy information of a certain exposure process from the exposure apparatus and adjusts the gas pressure to thereby ensure a necessary dynamic range. is there. That is, the laser gas control device 4 changes the gas pressure to change the nominal energy while maintaining the energy stability within an allowable range.
- the laser controller C may control the voltage HV value independently.
- FIG. 4 is a flowchart showing a control processing procedure of the voltage HV value by the laser controller C.
- the laser controller C may control the voltage HV value when there is a command to perform laser energy control from the exposure apparatus controller C100.
- the laser controller C may read a voltage HV value corresponding to the required pulse energy Et sent from the exposure apparatus controller C100 as an initial value (step S1701).
- the voltage HV value corresponding to the required pulse energy Et may be stored in advance as data, or may be obtained by calculation.
- the voltage HV value corresponding to the required pulse energy Et may be determined in consideration of the gas pressure.
- the laser controller C may read the required pulse energy Et (step S1702).
- the laser controller C100 may send a command to charge the PO power supply 22 to the voltage HV value to the laser power supply control device 3.
- the laser controller C determines whether or not the laser oscillation trigger signal sent from the exposure apparatus controller C100 has been detected (step S1703), and may wait until the trigger signal is detected (step S1703). No). Only when the trigger signal is detected (step S1703, Yes), the laser controller C may cause laser oscillation via the laser power supply control device 3 (step S1704). Thereafter, the laser energy E accompanying the laser oscillation may be detected via the energy sensor unit 40 (step S1705).
- step S1709 it may be determined whether or not to change the initial value of the voltage HV value. For example, when the required pulse energy Et changes greatly, the initial value of the voltage HV value may be changed. Further, when the energy value command value S1 is sent from the exposure apparatus 100, the initial value of the voltage HV value may be changed. When the initial value of the voltage HV value is changed (step S1709, Yes), the process may proceed to step S1701, the initial value is updated, and the above-described processing may be repeated. On the other hand, when the initial value of the voltage HV value is not changed (No in step S1709), it may be determined whether or not to stop the control process of the voltage HV value (step S1710).
- step S1710 When the control of the voltage HV value is not stopped (No in step S1710), the process may move to step S1702 and the above-described process may be repeated using the current voltage HV value. On the other hand, when the control of the voltage HV value is stopped (step S1710, Yes), this process may be terminated. For example, when there is a command to stop laser energy control from the exposure apparatus controller C100, the control process of the voltage HV value may be stopped. In the control process of the voltage HV value, the updated voltage HV value may be stored every time the voltage HV value is updated.
- FIG. 5 is a flowchart showing a gas total pressure change processing procedure when the target energy is changed by the laser gas control device and the laser power supply control device according to the first embodiment of the present disclosure.
- the laser controller C may determine whether or not a laser output range switching request has been made by the energy value command S ⁇ b> 1 from the exposure apparatus 100 (step S ⁇ b> 101). If there is no laser output range switching request (step S101, No), this processing may be terminated and output control in the immediately previous state may be continued.
- step S101 when there is a laser output range switching request (step S101, Yes), a setting for changing the target energy may be performed (step S102), and laser output may be started (step S103). Thereafter, the current voltage HV value stored in step S1708 may be read (step S104), and it may be determined whether the voltage HV value is within the target HV range (step S105).
- step S105 If it is within the target HV range (step S105, Yes), gas adjustment is not necessary, so after stopping the laser output (step S115), this process is terminated and the output control in the previous state is continued. May be. On the other hand, if the target HV range is not within the target HV range (No in step S105), the target HV range may be further compared with the voltage HV value to determine whether the target HV range is larger than the voltage HV value ( Step S106).
- the laser gas control device 4 may open the valve for the chamber 21 and start laser gas injection (step S107). . Furthermore, the voltage HV value stored in step S1708 may be read (step S108), and it may be determined whether or not the voltage HV value has entered the target HV range by this gas injection (step S109). When the voltage HV value is not within the target HV range (No at Step S109), the process may move to Step S108, and the reading of the voltage HV value and the determination process at Step S109 may be repeated.
- step S109 when the voltage HV value is within the target HV range (step S109, Yes), the gas injection may be stopped by closing the valve (step S110). Thereafter, after the laser output is stopped (step S115), this processing may be terminated and output control of the switched laser output range may be performed.
- the laser gas control device 4 may open the valve for the chamber 21 and start exhausting the laser gas (step S111). . Furthermore, the voltage HV value stored in step S1708 may be read (step S112), and it may be determined whether or not the voltage HV value has entered the target HV range by this gas exhaust (step S113). When the voltage HV value is not within the target HV range (No at Step S113), the process may move to Step S112, and the reading of the voltage HV value and the determination process at Step S113 may be repeated.
- step S113 when the voltage HV value is within the target HV range (step S113, Yes), the valve may be closed to stop gas exhaust (step S114). Thereafter, after the laser output is stopped (step S115), this processing may be terminated and output control of the switched laser output range may be performed. Note that the processing from step S102 to S115 is the adjustment oscillation sequence SQ1.
- FIG. 6 shows the relationship between the laser output energy variation ⁇ of the excimer laser, the voltage HV values (V 1 , V 2 , V 3 ), and the fluorine (F 2 ) partial pressure in the laser gas.
- the energy variation (laser output energy variation) for each pulse of the output light energy of the excimer laser as a light source for performing processing such as semiconductor exposure needs to be small. If this variation is large, the amount of exposure varies, for example, for each chip on the Si wafer or for each location on the surface of one chip within the exposure apparatus, resulting in manufacturing defects of each chip. Therefore, an allowable range (specification) of the laser output energy variation ⁇ is determined, and the laser device is driven and controlled so as to maintain the voltage HV value, gas total pressure, and fluorine partial pressure to satisfy the specification. It is preferable to do.
- the control device Since the output pulse energy slightly increases and decreases while the excimer laser is driven, the control device frequently performs control to increase and decrease the voltage HV value at high speed in order to suppress the increase and decrease. On the other hand, unless the control device performs forced gas supply / exhaust, there is usually no factor that causes a large fluctuation in the gas pressure and fluorine gas in a short time. In such normal drive control, since the fluctuation range of the voltage HV value in FIG. 6 is small, the possibility of deviating from the allowable range (specification) of the variation ⁇ in a short time is low.
- the voltage HV value when the laser output energy is significantly increased or decreased in a short time, the voltage HV value must be significantly increased or decreased, respectively.
- the operation corresponds to increasing the voltage HV value from V 3 to V 1 or decreasing from V 1 to V 3 in FIG.
- the variation ⁇ is highly likely to deteriorate significantly. Therefore, in order to maintain the laser output energy constant when the fluorine partial pressure is constant, it is necessary to decrease the voltage HV value when the total gas pressure is increased, and it is necessary to increase the voltage HV value when the total gas pressure is decreased.
- the variation ⁇ is returned to the specification range using the characteristic that there is.
- the voltage HV value was increased from V 3 to V 1, or if the V 1 is lowered to V 3, performs processing respectively lowering the total gas pressure, or increased, respectively voltage HV value return from V 1 V 3 to the vicinity of, or returns from V 3 to V 1 neighborhood.
- the variation ⁇ can be returned to within the specification range.
- the range in which the voltage HV value should enter in this last processing is called the target HV range.
- FIG. 7 shows a timing chart at the time of changing the gas total pressure when the target energy is changed from 60 W to 90 W.
- the adjustment oscillation sequence SQ1 may be performed between time points t1 and t2 ( ⁇ t).
- the target energy is changed to 90 W at time t1
- the voltage HV value increases rapidly and is likely to be out of the target HV range.
- gas may be injected and the gas may be injected until the voltage HV value falls within the target HV range.
- the adjusted oscillation sequence SQ1 may end after the voltage HV value falls within the target HV range, and the adjusted oscillation may end at time t2.
- FIG. 8 shows a timing chart at the time of changing the total gas pressure when the target energy is changed from 90 W to 60 W.
- the adjustment oscillation sequence SQ1 may be performed between time points t1 and t2 ( ⁇ t).
- the target energy is changed to 60 W at the time point t1
- the voltage HV value is rapidly lowered and is likely to be out of the target HV range.
- the gas may be exhausted until the voltage HV value falls within the target HV range.
- the adjusted oscillation sequence SQ1 may end after the voltage HV value falls within the target HV range, and the adjusted oscillation may end at time t2.
- the laser output energy variation ⁇ can be changed to a stable state.
- the laser apparatus for exposure apparatus may have the same configuration as that of the first embodiment.
- the first modification of the first embodiment is different from the first embodiment in the control when changing the target energy.
- the laser gas control device 4 and the laser power supply control device 3 control the gas total pressure and the voltage HV value by the adjustment oscillation sequence SQ1.
- the gas total pressure changing process at the time of changing the target energy is performed by the laser gas control device 4. That is, in the first embodiment, the total gas pressure is controlled so that the voltage HV value falls within the target HV range.
- the laser output is performed only by the laser gas control device 4. A target gas pressure corresponding to the range switching request is determined, and control is performed so that the gas pressure becomes this target gas pressure.
- the voltage HV value is not controlled when the target energy is changed.
- FIG. 9 is a flowchart showing a gas total pressure change processing procedure when the target energy is changed by the laser gas control device 4 which is the first modification of the first embodiment of the present disclosure.
- the laser gas control device 4 may determine whether or not there has been a laser output range switching request from the exposure device 100 (step S201). If there is no request for switching the laser output range (No in step S201), this process may be terminated and output control in the immediately previous state may be continued.
- step S201 if there is a laser output range switching request (step S201, Yes), it may be determined whether or not the output range of the laser output is further increased (step S202).
- the laser gas control device 4 may calculate the gas injection amount and determine the target gas pressure (step S204).
- bulb with respect to the chamber 21 may be opened and gas injection
- step S207 gas injection may be continued, and this may be repeated until the gas pressure is read and the gas pressure exceeds the target gas pressure.
- step S207, Yes the gas injection may be stopped by closing the valve for the chamber 21 (step S208). Then, this process may be terminated and output control of the switched laser output range may be performed.
- the laser gas control device 4 may calculate the gas displacement and determine the target gas pressure (Step S209). And the valve
- step S212 when the gas pressure becomes lower than the target gas pressure (step S212, Yes), the valve for the chamber 21 may be closed to stop the gas exhaust (step S213). Then, this process may be terminated and output control of the switched laser output range may be performed.
- steps S202 to S213 in FIG. 9 are a gas adjustment sequence SQ2 by the laser gas control device 4.
- FIG. 10 shows a timing chart in the gas total pressure changing process according to the first modification of the first embodiment when the target energy is changed from 60 W to 90 W.
- the laser gas control apparatus 4 may perform the gas adjustment sequence SQ2 between time points t1 and t2 ( ⁇ t). Good.
- the gas pressure gradually increases by the gas adjustment sequence SQ2, and approaches the target gas pressure.
- the gas adjustment sequence SQ2 may be ended, and the gas adjustment may be ended at a time point t2.
- FIG. 11 shows a timing chart at the time of the gas total pressure changing process according to the first modification of the first embodiment when the target energy is changed from 90 W to 60 W.
- the laser gas control apparatus 4 may perform the gas adjustment sequence SQ2 between time points t1 and t2 ( ⁇ t). Good.
- the gas pressure gradually decreases by the gas adjustment sequence SQ2, and approaches the target gas pressure. Thereafter, when the gas pressure becomes the target gas pressure, the gas adjustment sequence SQ2 is ended, and the gas adjustment may be ended at time t2.
- the laser apparatus for exposure apparatus may have the same configuration as that of the first embodiment.
- the second modification of the first embodiment is different from the first embodiment in the control when changing the target energy.
- a voltage HV value changing process at the time of changing the target energy is performed by the laser power supply control device 3. That is, in the first embodiment, the total gas pressure is controlled so that the voltage HV value falls within the target HV range, but in the second modification of the first embodiment, only the laser power supply control device 3 is used. Control is performed so that the voltage HV value corresponds to the laser output range switching request.
- FIG. 12 is a flowchart showing a voltage HV value change processing procedure when the target energy is changed by the laser power supply control device 3 which is the second modification of the first embodiment of the present disclosure.
- the laser power supply control device 4 may determine whether or not there has been a laser output range switching request from the exposure device 100 (step S301). If there is no request for switching the laser output range (No in step S301), this process may be terminated and output control in the immediately previous state may be continued. On the other hand, when there is a laser output range switching request (Yes in step S301), the laser power supply control device 3 changes the voltage HV value by changing the target energy (step S302), and performs this process. You may end.
- FIG. 13 shows a timing chart in the voltage HV value changing process according to the second modification of the first embodiment when the target energy is changed from 60 W to 90 W.
- the laser power supply control device 3 may change the target HV value immediately at the time point t1.
- the laser power supply control device 3 may immediately change the target HV value at time t1.
- the second modification of the first embodiment has an advantage that the target energy can be changed immediately. Therefore, a flexible apparatus can be realized by selectively operating the above-described first embodiment or its modifications 1 and 2 according to the situation.
- the laser apparatus for exposure apparatus according to the third modification of the first embodiment may have the same configuration as that of the first embodiment.
- the laser gas in the chamber is exchanged before the timing of the adjustment oscillation sequence SQ1. Like to do.
- FIG. 15 is a flowchart showing a gas total pressure change processing procedure at the time of target energy change according to Modification 3 of Embodiment 1 of the present disclosure.
- a gas exchange process that is a gas exchange sequence SQ4 is performed between step S101 and step S102 in the process shown in FIG. 5 (step S401).
- the laser gas control device 4 may open the valve for the chamber 21 and start gas exhaust (step S501). Thereafter, the gas pressure in the chamber 21 is read (step S502), and it may be determined whether substantially all of the gas has been exhausted (step S503). Wait until almost all of the gas is exhausted (step S503, No), and when almost all of the gas is exhausted (step S503, Yes), the valve for the chamber 21 may be closed to stop the gas exhaust ( Step S504).
- the laser gas control device 4 may calculate a target gas pressure for gas injection (step S505). Thereafter, the valve for the chamber 21 may be opened to start gas injection (step S506). Thereafter, the gas pressure in the chamber 21 may be read (step S507), and it may be determined whether or not the gas pressure has exceeded the target gas pressure (step S508). Thereafter, the process waits until the gas pressure exceeds the target gas pressure (step S508, No). When the gas pressure exceeds the target gas pressure (step S508, Yes), the valve is closed to stop gas injection (step S509). Returning to step S401, the adjusted oscillation sequence SQ1 may be executed.
- FIG. 17 shows a time chart when the gas exchange process is performed when the target energy is changed from 60 W to 90 W.
- the target energy change request may not be changed immediately upon receiving the target energy change request, and the gas exchange process may be performed first in the period ⁇ t1. Thereafter, in the period ⁇ t2, the adjustment oscillation process for changing the total gas pressure so as to fall within the target HV range requested to be changed may be performed.
- the gas pressure in the chamber 21 once becomes substantially zero.
- the gas pressure after gas exchange is set high.
- the target energy when the target energy is changed from 90 W to 60 W, the target energy is not changed immediately upon receiving the target energy change request, and the gas exchange process is first performed in the period ⁇ t1. Good. Thereafter, in the period ⁇ t2, an adjustment oscillation process may be performed in which the gas total pressure is changed so as to fall within the requested target HV range. Note that the gas pressure after the gas exchange is set lower because the target energy is reduced thereafter.
- the laser apparatus for exposure apparatus may have the same configuration as that of the first embodiment.
- the shutter is opened and closed and the exposure apparatus side is notified that the adjustment oscillation sequence is being performed in order to prevent leakage of laser light to the exposure apparatus side.
- the adjustment oscillation sequence is being performed in order to prevent leakage of laser light to the exposure apparatus side.
- FIG. 19 is a flowchart showing a gas total pressure changing process procedure when changing the target energy by the exposure apparatus laser apparatus according to the second embodiment of the present disclosure.
- step S601 it is determined whether or not there has been a request for switching the laser output range. Only when there is a request for switching the laser output range (step S601, Yes), the adjusted oscillation sequence SQ6 is performed. .
- step S606 the shutter 50 is closed (step S602), and the exposure apparatus 100 side may be notified of the fact that adjustment oscillation is being performed, for example, by the adjustment oscillation signal S2 (step S603). Thereafter, a parameter setting routine R1 for calculating a laser output range switching parameter and setting the parameter may be performed (step S604). Thereafter, laser oscillation is started (step S605), and the laser control subroutine R2 similar to the adjustment oscillation sequence SQ1 of the first embodiment is performed, and the voltage HV value may be controlled to fall within the target HV range (step). S606).
- a switching setting subroutine R3 for determining whether or not the laser output range switching is acceptable may be performed (step S607). Then, it may be determined whether the determination result is “Yes” or “No” (step S608). If the determination result is “No”, the process proceeds to step S606 to repeat the laser control subroutine R2 and the switching determination subroutine R3 described above. If the determination result is “Yes”, the laser oscillation is stopped. It is also possible (step S609).
- the end of the adjustment oscillation may be notified to the exposure apparatus 100 side by, for example, the adjustment oscillation signal S2 (step S610). Further, the shutter 50 may be opened (step S611), and this process may be terminated.
- step S604 gas pressure before output range switching: P1, voltage before output range switching: HV1, pulse energy before output range switching: E1, The required pulse energy after switching: E2 may be read (step S701). Thereafter, a parameter calculation subroutine R11 for calculating parameters after switching the output range may be performed (step S702). Further, a laser gas control subroutine R12 for controlling the laser gas immediately after the output range is switched may be performed (step S703). Thereafter, the voltage after switching the output range: HV2 and the required pulse energy after switching the output range: E2 may be set (step S704), and the process may return to step S604. The voltage HV2 may be set based on the required pulse energy E2 after switching the output range: E2 and the gas pressure P2 after switching.
- step S606 the laser control subroutine R2 sets the voltage HV value to the voltage HV2 set by the parameter setting subroutine R1, and sets the target pulse energy Et by the parameter setting subroutine R1, as shown in FIG.
- the required pulse energy may be set to E2 (step S801).
- the voltage HV value of the laser may be controlled so that the required pulse energy Et is obtained (step S802).
- the same processing as steps S104 to S114 of the adjusted oscillation sequence SQ1 shown in FIG. 5 may be performed (steps S803 to S813), and the process may return to step S606.
- the switching determination subroutine R3 in step S607 may first read the measurement parameter of the laser oscillation state as shown in FIG. 22 (step S901).
- the measurement parameters are, for example, laser energy stability: ⁇ E, oscillated pulse energy: E, laser gas pressure: P, and the like. Thereafter, it may be determined whether the measurement parameter of the laser oscillation state is within an allowable range (step S902).
- This determination includes, for example, allowable range energy stability ( ⁇ Et ⁇ E?), Allowable range pulse energy ( ⁇ E ⁇
- the parameter calculation subroutine R11 in step S702 calculates the gas pressure P2 after switching to achieve the required pulse energy E2 after switching (step S1001), and returns to step S702. May be.
- the calculation of the gas pressure P2 may be performed by calling a function or table of the laser gas pressure and the pulse energy E measured in advance.
- the laser gas control subroutine R12 in step S703 is performed so that the laser controller C causes the laser gas control device 4 to set the laser gas pressure (total pressure) P2 or the laser gas exhaust amount Qout or the laser gas injection immediately after the switching.
- a signal may be transmitted to perform the quantity Qin (step S1101), and the process may return to step S703.
- Subroutine R11 of the second embodiment described above may be subroutine R11a.
- the parameter calculation subroutine R11a corresponding to the parameter calculation subroutine R11 in step S702 may calculate the gas pressure P2 after switching to achieve the required pulse energy E2 after switching (step S1201). ).
- the laser gas pressure P1 before switching may be taken into consideration.
- the calculation of the gas pressure P2 may be performed by calling a function or table of the laser gas pressure, the pulse energy E, and the laser gas pressure P1 before switching, which are measured in advance.
- FIG. 28 schematically shows a configuration of a laser apparatus for exposure apparatus according to the third embodiment.
- the laser gas cylinder 60a holds a laser gas (Ar + Ne) that does not contain F 2 gas.
- the laser gas cylinder 60b holds a laser gas (Ar + Ne + F 2 ) containing F 2 gas.
- the laser gas without the F 2 gas (Ar + Ne) the partial pressure of the laser gas containing F 2 gas (Ar + Ne + F 2) ( concentration) ratio (Ar: Ne) is set to the same value. Therefore, the laser gas containing no F 2 gas (Ar + Ne), by adjusting the injection amount of the laser gas (Ar + Ne + F 2) containing F 2 gas, the laser gas having a desired fluorine (F 2) gas partial pressure Can be easily obtained.
- the parameter calculation subroutine R11 in the second embodiment may be a parameter calculation subroutine R11b shown in FIG.
- the laser gas control subroutine R12 in the second embodiment may be a laser gas control subroutine R12a shown in FIG.
- the parameter calculation subroutine R11b corresponding to the parameter calculation subroutine R11 in step S702 may calculate the gas pressure P2 after switching to achieve the required pulse energy E2 after switching (step S1301). ).
- the calculation of the gas pressure P2 may be performed by calling a function or table of the laser gas pressure and the pulse energy E measured in advance.
- the laser controller C has the laser gas pressure (total pressure) P2 and the fluorine gas partial pressure Pf2 immediately after switching. Then, a signal is transmitted to the laser gas control device 4 so as to perform the laser gas exhaust amount Qout, the laser gas injection injection amount Qin not including fluorine gas, and the laser gas injection amount Qf2in including fluorine gas (step S1401), and then to step S703. You may return.
- Subroutine R11b of the third embodiment described above may be subroutine R11c.
- the parameter calculation subroutine R11c corresponding to the parameter calculation subroutine R11 in step S702 calculates the gas pressure P2 after switching to achieve the required pulse energy E2 after switching (step S1501).
- the laser gas pressure P1 before switching may be taken into consideration.
- the calculation of the gas pressure P2 may be performed by calling a function or table of the laser gas pressure, the pulse energy E, and the laser gas pressure P1 before switching, which are measured in advance.
- FIG. 33 is a side view schematically showing the configuration of the exposure apparatus laser apparatus according to the fourth embodiment.
- FIG. 34 is a plan view schematically showing the amplification stage 70 shown in FIG.
- the output light from the seed laser 1 is introduced into the output coupling mirror 87 of the ring resonator via the highly reflective mirrors 31, 32, 83.
- the output coupling mirror 87 may be a partial reflection mirror having a reflectance of 20 to 30%.
- the ring resonator may include an output coupling mirror 87 and highly reflective mirrors 84, 85, 86.
- the output light from the seed laser 1 is injected from the output coupling mirror 87, reflected by the highly reflective mirror 84, and passes through the discharge region between the pair of discharge electrodes 73 through the window of the chamber 71.
- a high voltage is applied between the pair of discharge electrodes 73 to discharge them.
- This discharge excites the laser medium and amplifies the seed laser beam.
- the amplified laser light is reflected by the highly reflective mirrors 85 and 86 through the window, and again passes through the discharge region and is amplified through the window.
- the amplified laser light that has passed through the output coupling mirror 87 is output to the outside.
- the light reflected by the output coupling mirror 87 is returned into the ring resonator as feedback light of the ring resonator, and the seed light is amplified and oscillated.
- the energy sensor unit 40 shown in FIG. 1 is provided with a dynamic range switching mechanism for switching the dynamic range of energy detection.
- the other configuration of the laser apparatus for exposure apparatus according to the fifth embodiment may be the same as that of the laser apparatus for exposure apparatus according to the first embodiment shown in FIG.
- the laser controller C reads the required pulse energy E2 after switching from the exposure apparatus 100 (step S1601), and it is necessary to switch the dynamic range of energy detection from the required pulse energy E2 after switching. It may be determined whether or not (step S1602).
- step S1602 If it is determined that it is necessary to switch the dynamic range for energy detection (step S1602, Yes), a signal for driving the dynamic range switching mechanism is transmitted to the dynamic range switching mechanism (step S1603). Thereafter, the process may return to step S1601. If it is determined that it is not necessary to switch the dynamic range for energy detection (step S1602, No), the process may return to step S1601 as it is.
- FIG. 36 is a schematic diagram showing an example of an energy sensor unit provided with a dynamic range switching mechanism.
- the dynamic range switching mechanism 140 may include amplifiers 141a to 141c having three different amplification factors, and a multiplexer 142 that selectively outputs signals output from the amplifiers 141a to 141c.
- the amplification factors of the amplifiers 141a to 141c may be 1 times, 2 times, and 4 times, respectively.
- the detection signal output from the optical sensor 43 such as a photodiode is input to each of the branched amplifiers 141 a to 141 c, amplified by the respective amplification factors, selectively output by the multiplexer 142, and output to the AD converter 44. Good.
- the AD converter 44 may output the input detection signal to the laser controller C as a digital signal. Then, as described above, the laser controller C may send a switching signal to the multiplexer 142 in order to obtain a dynamic range of energy detection corresponding to the required pulse energy E2 after switching.
- FIG. 37 is a schematic diagram illustrating another example of an energy sensor unit including a dynamic range switching mechanism.
- the dynamic range switching mechanism 240 is provided between the beam splitter 41 and the condenser lens 42 and includes a plurality of filters F1 and F2 arranged in the longitudinal direction of the stage 241 and having different transmittances. May be. Note that F0 is an area without a filter.
- This energy sensor unit 40 may change the arrangement of filters F1 and F2 having different transmittances and no filter (F0) on the sensor optical axis by sliding the stage 241.
- the movement of the stage 241 may be driven and controlled by the laser controller C.
- the dynamics of the laser output to the exposure apparatus can be achieved without significantly affecting the apparatus configuration, suppressing unnecessary power consumption, and further shortening the life of the amplification stage.
- the range can be increased.
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Abstract
Description
まず、この開示の実施の形態1である露光装置用レーザ装置の構成について説明する。図1は、この開示の実施の形態1である露光装置用レーザ装置の構成を模式的に示す。図1に示されるように、この露光装置用レーザ装置は、シードレーザ1と、このシードレーザ1の出力光を入力して増幅し出力する少なくとも1台のガス放電励起式の増幅段2とを備えたMOPA(Master Oscillator Power Amplifier)方式またはMOPO(Master Oscillator Power Oscillator)方式の放電励起式ガスレーザ装置である。なお、MOPA方式は、増幅段2に共振器が設けられない方式である。また、MOPO方式は、インジェクションロック方式とも呼ばれ、増幅段2に共振器が設けられる方式である。なお、シードレーザ1と増幅段2との間は、少なくとも2つの高反射ミラー31,32を有する光学系によって結合されてもよい。
実施の形態1の変形例1による露光装置用レーザ装置は、実施の形態1と同様の構成を備えてもよい。実施の形態1の変形例1は、ターゲットエネルギー変更時の制御が実施の形態1と異なる。上述した実施の形態1では、調整発振シーケンスSQ1によってレーザガス制御装置4およびレーザ電源制御装置3がガス全圧と電圧HV値を制御していた。この変形例1では、レーザガス制御装置4によってターゲットエネルギー変更時のガス全圧変更処理を行うようにしている。すなわち、実施の形態1では、電圧HV値がターゲットHVレンジ内に収まるようにガス全圧を制御していたが、この実施の形態1の変形例1では、レーザガス制御装置4のみによって、レーザ出力レンジ切替要求に対応するターゲットガス圧を決定し、ガス圧がこのターゲットガス圧となるように制御する。この実施の形態1の変形例1では、ターゲットエネルギー変更時に電圧HV値の制御は行わない。
実施の形態1の変形例2による露光装置用レーザ装置は、実施の形態1と同様の構成を備えてもよい。実施の形態1の変形例2は、ターゲットエネルギー変更時の制御が実施の形態1と異なる。この変形例2では、レーザ電源制御装置3によってターゲットエネルギー変更時の電圧HV値変更処理が行われる。すなわち、この実施の形態1では、電圧HV値がターゲットHVレンジ内に収まるようにガス全圧を制御していたが、この実施の形態1の変形例2では、レーザ電源制御装置3のみによって、レーザ出力レンジ切替要求に対応する電圧HV値となるように制御する。
実施の形態1の変形例3による露光装置用レーザ装置は、実施の形態1と同様の構成を備えてもよい。この実施の形態1の変形例3では、上述した実施の形態1による調整発振シーケンスSQ1によってターゲットエネルギーの変更を行う場合、この調整発振シーケンスSQ1のタイミングの前にチャンバ内のレーザガスのガス交換をも行うようにしている。
実施の形態2による露光装置用レーザ装置は、実施の形態1と同様の構成を備えてもよい。この開示の実施の形態2では、調整発振シーケンスを行う場合、露光装置側へのレーザ光の漏れを防止するため、シャッタの開閉を行うとともに、調整発振シーケンス中である旨を露光装置側に通知するようにしている。
Ppr=f(E1)
Ppo=f(E2)
と表され、これらから、差圧ΔPは、
ΔP=Ppo-Ppr
となり、ガス圧(全圧)P2は、
P2=P1+ΔP
として計算される。
上述の実施の形態2のサブルーチンR11は、サブルーチンR11aとしてもよい。ステップS702のパラメータ計算サブルーチンR11に対応するパラメータ計算サブルーチンR11aは、図26に示すように、切替後の要求パルスエネルギーE2を達成するための切替後のガス圧P2を計算してもよい(ステップS1201)。この際、切替前のレーザガス圧P1も考慮されてもよい。このガス圧P2の計算は、具体的には、予め計測しておいたレーザガス圧とパルスエネルギーEと切替前のレーザガス圧P1との関数またはテーブルを呼び出して行ってもよい。
Ppr=f(E1,P1)
Ppo=f(E2,P1)
と表され、これらから、差圧ΔPは、
ΔP=Ppo-Ppr
となり、ガス圧(全圧)P2は、
P2=P1+ΔP
として計算される。
図28は、実施の形態3による露光装置用レーザ装置の構成を模式的に示す。この実施の形態3では、実施の形態1のレーザガスボンベ60に替えて、図28に示すように、2つのレーザガスボンベ60a,60bが設けられる。レーザガスボンベ60aは、F2ガスを含まないレーザガス(Ar+Ne)を保持する。レーザガスボンベ60bは、F2ガスを含むレーザガス(Ar+Ne+F2)を保持する。なお、F2ガスを含まないレーザガス(Ar+Ne)と、F2ガスを含むレーザガス(Ar+Ne+F2)との各分圧(濃度)比(Ar:Ne)は、同じ値に設定されている。このため、F2ガスを含まないレーザガス(Ar+Ne)と、F2ガスを含むレーザガス(Ar+Ne+F2)との注入量を加減することによって、所望のフッ素(F2)ガス分圧をもったレーザガスを容易に得ることができる。
Ppr=f(E1)
Ppo=f(E2)
と表され、これらから、差圧ΔPは、
ΔP=Ppo-Ppr
となり、ガス圧(全圧)P2は、
P2=P1+ΔP
として計算される。
上述の実施の形態3のサブルーチンR11bは、サブルーチンR11cとしてもよい。ステップS702のパラメータ計算サブルーチンR11に対応するパラメータ計算サブルーチンR11cは、図32に示すように、切替後の要求パルスエネルギーE2を達成するための切替後のガス圧P2を計算する(ステップS1501)が、この際、切替前のレーザガス圧P1も考慮してもよい。このガス圧P2の計算は、具体的には、予め計測しておいたレーザガス圧とパルスエネルギーEと切替前のレーザガス圧P1との関数またはテーブルを呼び出して行ってもよい。
Ppr=f(E1,P1)
Ppo=f(E2,P1)
と表され、これらから、差圧ΔPは、
ΔP=Ppo-Ppr
となり、ガス圧(全圧)P2は、
P2=P1+ΔP
として計算される。
この実施の形態4による露光装置用レーザ装置は、図1に示した露光装置用レーザ装置の増幅段2のファブリペロ共振器をリング共振器に替えた増幅段70としている。図33は、この実施の形態4にかかる露光装置用レーザ装置の構成を模式的に示した側面図である。図34は、図33に示した増幅段70を模式的に示した平面図である。
この実施の形態5による露光装置用レーザ装置は、図1に示したエネルギーセンサユニット40に、エネルギー検出のダイナミックレンジを切り替えるダイナミックレンジ切替機構を設けている。実施の形態5による露光装置用レーザ装置の他の構成は、図1に示す実施の形態1による露光装置用レーザ装置と同様であってよい。図35に示すように、レーザコントローラCは、露光装置100からの切替後の要求パルスエネルギーE2を読み込み(ステップS1601)、この切替後の要求パルスエネルギーE2から、エネルギー検出のダイナミックレンジの切替が必要であるか否かを判断してもよい(ステップS1602)。そして、エネルギー検出のダイナミックレンジの切替が必要であると判断された場合(ステップS1602,Yes)には、このダイナミックレンジ切替機構を駆動するための信号をダイナミックレンジ切替機構に送信し(ステップS1603)、その後、ステップS1601にリターンしてもよい。また、エネルギー検出のダイナミックレンジの切替が必要でないと判断された場合(ステップS1602,No)、そのままステップS1601にリターンしてもよい。
図37は、ダイナミックレンジ切替機構を備えたエネルギーセンサユニットの他の例を示す模式図である。図37に示すように、ダイナミックレンジ切替機構240は、ビームスプリッタ41と集光レンズ42との間に設けられ、ステージ241の長手方向に配列された透過率の異なる複数のフィルタF1,F2を備えてもよい。なお、F0は、フィルタのない領域である。
Claims (4)
- シードレーザと、前記シードレーザの出力光を入力して増幅出力する少なくとも1つのガス放電励起式の増幅段と、を有したMOPA方式およびMOPO方式のいずれか一方の放電励起式ガスレーザ装置と、
露光装置からの要求によって前記放電励起式ガスレーザ装置からのレーザ出力光のエネルギーを不連続的に変化させる場合に、少なくとも前記増幅段のレーザガスの全圧力を前記要求されたエネルギーに応じて変化させるレーザガス制御装置および少なくとも前記増幅段の放電電極の励起強度を前記要求されたエネルギーに応じて変化させるレーザ電源制御装置の少なくともいずれか一方の制御装置と、
を備える露光装置用レーザ装置。 - 露光装置からの要求によって前記放電励起式ガスレーザ装置からのレーザ出力光のエネルギーを不連続的に変化させる場合に、前記露光装置が要求するレーザ出力光のエネルギーのばらつきを含む要求仕様を満足するまで前記レーザガス制御装置または前記レーザ電源制御装置の内の何れか一方または両方の制御装置を制御して前記放電励起式ガスレーザ装置の調整発振を行うレーザコントローラをさらに備える請求項1に記載の露光装置用レーザ装置。
- 前記レーザコントローラは、露光装置からの要求によって前記放電励起式ガスレーザ装置からのレーザ出力光のエネルギーを不連続的に変化させる場合に、前記レーザガス制御装置を制御して少なくとも前記放電励起式ガスレーザ装置のレーザガス交換を行い、前記露光装置が要求するレーザ出力光のエネルギーのばらつきを含む要求仕様を満足するまで前記レーザガス制御装置または前記レーザ電源制御装置の内の何れか一方または両方の制御装置を制御して前記放電励起式ガスレーザ装置の調整発振を行う請求項1に記載の露光装置用レーザ装置。
- 前記放電励起式ガスレーザ装置から出力されたレーザ出力光のエネルギーを検出するエネルギーセンサユニットをさらに備え、
前記エネルギーセンサユニットは、前記放電励起式ガスレーザ装置から出力されたレーザ出力光のエネルギー検出のダイナミックレンジを切り替えるダイナミックレンジ切替機構を備える請求項1に記載の露光装置用レーザ装置。
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