WO2011102411A1 - 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 - Google Patents
窒化物半導体発光素子および窒化物半導体発光素子の製造方法 Download PDFInfo
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- WO2011102411A1 WO2011102411A1 PCT/JP2011/053358 JP2011053358W WO2011102411A1 WO 2011102411 A1 WO2011102411 A1 WO 2011102411A1 JP 2011053358 W JP2011053358 W JP 2011053358W WO 2011102411 A1 WO2011102411 A1 WO 2011102411A1
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 521
- 239000004065 semiconductor Substances 0.000 title claims abstract description 500
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000012535 impurity Substances 0.000 claims abstract description 119
- 239000000203 mixture Substances 0.000 claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims description 32
- 238000001947 vapour-phase growth Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 26
- 239000003362 semiconductor superlattice Substances 0.000 claims description 24
- 239000012808 vapor phase Substances 0.000 claims description 21
- 239000012071 phase Substances 0.000 claims description 11
- 239000007789 gas Substances 0.000 description 35
- 239000000758 substrate Substances 0.000 description 35
- 229910002704 AlGaN Inorganic materials 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 10
- 230000002829 reductive effect Effects 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 239000012159 carrier gas Substances 0.000 description 5
- 239000013256 coordination polymer Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 nitride nitride Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Definitions
- the light emission principle of the nitride semiconductor light emitting element is the recombination of holes and electrons, it is important to appropriately produce a p-type nitride semiconductor layer and an n-type nitride semiconductor layer.
- Example 7 of Patent Document 3 a p-type cladding layer made of p-type Al 0.16 Ga 0.84 N doped with 5 ⁇ 10 19 / cm 3 of Mg is formed as a medium-concentration p-type layer, and lightly doped A technique is disclosed in which a lightly doped layer made of undoped GaN is formed as a p-type layer, and a heavily doped layer doped with 1 ⁇ 10 20 / cm 3 of Mg is formed as a heavily doped p-type layer. Yes.
- the p-type impurity concentration of the p-type nitride semiconductor layer and the p-type impurity concentration of the third p-type nitride semiconductor layer are: Respectively, lower than the p-type impurity concentration of the first p-type nitride semiconductor layer, a nitride semiconductor light emitting device.
- the present invention further includes a step of vapor-phase-growing a nitride semiconductor active layer on the n-type nitride semiconductor layer, and a step of vapor-phase-growing a first p-type nitride semiconductor layer on the nitride semiconductor active layer; Vapor-phase-growing a second p-type nitride semiconductor layer having an average Al composition equivalent to that of the first p-type nitride semiconductor layer on the first p-type nitride semiconductor layer; Vapor-phase-growing a third p-type nitride semiconductor layer having an average Al composition smaller than that of the first p-type nitride semiconductor layer on the type nitride semiconductor layer, and including a second p-type nitride Each of the semiconductor layer and the third p-type nitride semiconductor layer is a method for manufacturing a nitride semiconductor light-emitting element in which a p-type impurity is doped
- the average n-type impurity concentration is a value obtained by dividing the total atomic weight of n-type impurities in the n-type nitride semiconductor superlattice layer 106 by the volume of the n-type nitride semiconductor superlattice layer 106.
- the average Al composition (x5) of the first p-type nitride semiconductor layer 108 is equal to the average Al composition (x6) of the second p-type nitride semiconductor layer 109.
- a p-type impurity such as Mg Since the variation in the easiness of incorporation can be suppressed, the in-plane distribution of p-type impurities and the variation between wafers can be suppressed.
- the third p-type nitride semiconductor layer 110 in addition to undoped GaN, for example, Al x7 Ga y7 In z7 N (0 ⁇ x7 ⁇ 1, 0 ⁇ y7 ⁇ 1, 0 ⁇ z7 ⁇ 1, x7 + y7 + z7 ⁇ 0)
- a layer doped with a p-type impurity such as Mg can be stacked on the nitride semiconductor layer made of a group III nitride semiconductor represented by the formula
- the nitride semiconductor active layer 107 is, for example, a nitride semiconductor layer made of a group III nitride semiconductor represented by a formula Ga 1 -z 4 In z 4 N (0 ⁇ z4 ⁇ 0.4) as a quantum well layer.
- MQW multi-quantum well
- the first p-type nitride semiconductor layer 108 containing Al such as p-type AlGaN is vapor-phase grown on the nitride semiconductor active layer 107 by MOCVD, for example.
- MOCVD Metal Organic Chemical Vapor Deposition
- the first p-type nitride semiconductor layer 108 is made of p-type AlGaN
- the first p-type nitride semiconductor layer 108 is grown at a low pressure, and the amount of the group III source gas and the group V A uniform high quality film can be obtained by growing without changing the amount of the source gas.
- the carrier gas was switched from H 2 gas to N 2 gas, and the temperature of the template substrate was lowered to 870 ° C.
- a transparent electrode 215 made of ITO is formed on a part of the surface of the fourth p-type nitride semiconductor layer 211, and a Ni layer and a part of the surface of the transparent electrode 215 are formed on the side close to the transparent electrode 215.
- a p-side pad electrode 216 made of a laminate of Au layers is formed, and an n-side pad electrode 217 made of a laminate of Ni layers and Au layers is formed on a part of the surface of the n-type GaN contact layer 205.
- the average Al composition of the undoped Al 0.17 Ga 0.83 N layer 218 is 17%, and no impurity source gas is allowed to flow.
- the average Al composition of the second p-type nitride semiconductor layer 209 was 17%, and CP 2 Mg gas was not allowed to flow during the vapor phase growth of the second p-type nitride semiconductor layer 209.
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Abstract
Description
実施例1の窒化物半導体発光ダイオード素子として、図1および図2に示すように、表面に凹凸加工が施されたサファイア基板101上に、AlNバッファ層102、アンドープGaN層103、n型GaN下地層104(n型不純物(Si)濃度:6×1018/cm3)、n型GaNコンタクト層105(n型不純物(Si)濃度:6×1018/cm3、厚さ:1.5μm)、Siドープn型GaN層(n型不純物(Si)濃度:5×1018/cm3、厚さ:1.75nm)とSiドープn型InGaN層(n型不純物(Si)濃度:5×1018/cm3、厚さ:1.75nm)とを交互に20周期積層してなるn型超格子層106、Siドープn型GaN障壁層(n型不純物(Si)濃度:4×1017/cm3、厚さ:6.5nm)とアンドープInGaN量子井戸層(厚さ:3.5nm)とを交互に6周期積層した後にアンドープGaN障壁層を積層してなる窒化物半導体活性層107、Mgドープp型AlGaNからなる第1のp型窒化物半導体層108(p型不純物(Mg)濃度:2×1019/cm3、厚さ:11.75nm)、アンドープAlGaNからなる第2のp型窒化物半導体層109(p型不純物(Mg)濃度:1×1019/cm3、厚さ:3.75nm)、アンドープGaNからなる第3のp型窒化物半導体層110(p型不純物(Mg)濃度:1×1019/cm3、厚さ:60nm)およびp+GaNからなる第4のp型窒化物半導体層111(p型不純物(Mg)濃度:3×1019/cm3、厚さ:20nm)がこの順に積層されている。
比較例の窒化物半導体発光ダイオード素子を以下のようにして作製した。まず、窒化物半導体活性層107までは実施例1と同様にして作製した。次に、キャリアガスをN2ガスからH2ガスに切り替え、窒化物半導体活性層107上にp型AlGaN層を15nmの厚さに気相成長した(成長条件は第1のp型窒化物半導体層108と同じ。)。
第3のp型窒化物半導体層110をアンドープではなく、Mgをドーピングして第3のp型窒化物半導体層110中のp型不純物(Mg)濃度を4×1019/cm3としたこと以外は実施例1と同様にして実施例2の窒化物半導体発光ダイオード素子を作製した。
第3のp型窒化物半導体層110の気相成長用のガスとしてTMI(トリメチルインジウム)をさらに供給したこと以外は実施例1と同様にして実施例3の窒化物半導体発光ダイオード素子を作製した。
図4および図5に示すように、実施例4の窒化物半導体発光ダイオード素子200として、表面に凹凸加工が施されたサファイア基板201上に、AlNバッファ層202、アンドープGaN層203、n型GaN下地層204(n型不純物(Si)濃度:6×1018/cm3)、n型GaNコンタクト層205(n型不純物(Si)濃度:6×1018/cm3、厚さ:1.5μm)、Siドープn型GaN層(n型不純物(Si)濃度:5×1018/cm3、厚さ:1.75nm)とSiドープn型InGaN層(n型不純物(Si)濃度:5×1018/cm3、厚さ:1.75nm)とを交互に20周期積層してなるn型超格子層206、Siドープn型GaN障壁層(n型不純物(Si)濃度:4×1017/cm3、厚さ:6.5nm)とアンドープInGaN量子井戸層(厚さ:3.5nm)とを交互に6周期積層した後にアンドープGaN障壁層を積層してなる窒化物半導体活性層207、アンドープのAlGaN層218(厚さ:2nm)、Mgドープp型AlGaNからなる第1のp型窒化物半導体層208(p型不純物(Mg)濃度:2×1019/cm3、厚さ:11.75nm)、アンドープAlGaNからなる第2のp型窒化物半導体層209(p型不純物(Mg)濃度:1×1019/cm3、厚さ:3.75nm)、アンドープGaNからなる第3のp型窒化物半導体層210(p型不純物(Mg)濃度:1×1019/cm3、厚さ:60nm)およびp+GaNからなる第4のp型窒化物半導体層211(p型不純物(Mg)濃度:3×1019/cm3、厚さ:20nm)がこの順に積層されている。
次に、MOCVD装置内の気相の圧力を1×104Paに低下させるとともに、テンプレート基板の温度を1110℃に上昇させた。なお、MOCVD装置内の気相の圧力を1×104Paに低下させることによって、多数枚のウエハを成長することができるMOCVD装置内における後述するAlGaN層のAl組成のウエハ間でのばらつきやウエハ内でのAl組成のばらつきを抑制することができ、素子の歩留まりを良くすることができる。
Claims (9)
- n型窒化物半導体層(105,106)と、
前記n型窒化物半導体層(105,106)上に設けられた窒化物半導体活性層(107)と、
前記窒化物半導体活性層(107)上に設けられたp型窒化物半導体層(108,109,110,111)と、を備え、
前記p型窒化物半導体層(108,109,110,111)は、前記窒化物半導体活性層(107)側から、第1のp型窒化物半導体層(108)と、第2のp型窒化物半導体層(109)と、第3のp型窒化物半導体層(110)と、をこの順序で含み、
前記第1のp型窒化物半導体層(108)および前記第2のp型窒化物半導体層(109)はそれぞれAlを含んでおり、
前記第1のp型窒化物半導体層(108)の平均Al組成と、前記第2のp型窒化物半導体層(109)の平均Al組成とは同等であり、
前記第3のp型窒化物半導体層(110)は、前記第2のp型窒化物半導体層(109)よりもバンドギャップが小さく、
前記第2のp型窒化物半導体層(109)のp型不純物濃度および前記第3のp型窒化物半導体層(110)のp型不純物濃度は、それぞれ、前記第1のp型窒化物半導体層(108)のp型不純物濃度よりも低い、窒化物半導体発光素子(100)。 - 前記p型窒化物半導体層(108,109,110,111)は、前記第3のp型窒化物半導体層(110)の前記窒化物半導体活性層(107)の設置側とは反対側に第4のp型窒化物半導体層(111)をさらに含み、
前記第4のp型窒化物半導体層(111)は、前記第2のp型窒化物半導体層(109)よりもバンドギャップが小さく、
前記第4のp型窒化物半導体層(111)のp型不純物濃度は、前記第3のp型窒化物半導体層(110)のp型不純物濃度よりも高い、請求項1に記載の窒化物半導体発光素子(100)。 - 前記窒化物半導体活性層(107)は、複数の窒化物半導体量子井戸層と、複数の窒化物半導体障壁層と、を含む多重量子井戸構造を有しており、
前記複数の窒化物半導体障壁層のうち、前記p型窒化物半導体層(108,109,110,111)に接する窒化物半導体障壁層以外の窒化物半導体障壁層は、n型不純物を含む、請求項1に記載の窒化物半導体発光素子(100)。 - 前記n型窒化物半導体層(105,106)は、n型窒化物半導体コンタクト層(105)と、n型窒化物半導体超格子層(106)と、を含み、
前記n型窒化物半導体超格子層(106)は、前記n型窒化物半導体コンタクト層(105)と、前記窒化物半導体活性層(107)との間に位置して、
前記n型窒化物半導体超格子層(106)の平均n型不純物濃度は、1×1018/cm3以上である、請求項1に記載の窒化物半導体発光素子(100)。 - n型窒化物半導体層(105,106)上に窒化物半導体活性層(107)を気相成長させる工程と、
前記窒化物半導体活性層(107)上にAlを含む第1のp型窒化物半導体層(108)を気相成長させる工程と、
前記第1のp型窒化物半導体層(108)上に前記第1のp型窒化物半導体層(108)と平均Al組成が同等であるAlを含む第2のp型窒化物半導体層(109)を気相成長させる工程と、
前記第2のp型窒化物半導体層(109)上に前記第1のp型窒化物半導体層(108)よりも平均Al組成が小さい第3のp型窒化物半導体層(110)を気相成長させる工程と、を含み、
前記第2のp型窒化物半導体層(109)および前記第3のp型窒化物半導体層(110)はそれぞれ、前記第1のp型窒化物半導体層(108)よりも低濃度にp型不純物がドープされる、窒化物半導体発光素子(100)の製造方法。 - 前記第2のp型窒化物半導体層(109)を気相成長させる工程の後であって、前記第3のp型窒化物半導体層(110)を気相成長させる工程の前に、気相成長が中断される、請求項5に記載の窒化物半導体発光素子(100)の製造方法。
- 前記気相成長の中断時に、気相の圧力を変化させる、請求項6に記載の窒化物半導体発光素子(100)の製造方法。
- 前記第3のp型窒化物半導体層(110)を気相成長させる工程の後に、前記第3のp型窒化物半導体層(110)上に前記第3のp型窒化物半導体層(110)よりも高濃度にp型不純物をドープした第4の窒化物半導体層(111)を気相成長させる工程をさらに含む、請求項5に記載の窒化物半導体発光素子(100)の製造方法。
- 前記窒化物半導体活性層(207)と前記第1のp型窒化物半導体層(208)との間にAlを含む窒化物半導体層(218)をさらに含む、請求項1に記載の窒化物半導体発光素子(200)。
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014063891A (ja) * | 2012-09-21 | 2014-04-10 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子の製造方法 |
JP2014524676A (ja) * | 2011-09-29 | 2014-09-22 | 株式会社東芝 | 光結合層を有する発光素子 |
JP2014529190A (ja) * | 2011-09-29 | 2014-10-30 | 東芝テクノセンター株式会社 | 埋め込み電極を有する光結合層を有する発光素子 |
KR20140137208A (ko) * | 2013-05-22 | 2014-12-02 | 서울바이오시스 주식회사 | 발광 소자 및 그것을 제조하는 방법 |
US20150060764A1 (en) * | 2012-03-07 | 2015-03-05 | Samsung Electronics Co., Ltd. | Nitride semiconductor light emitting device and method of manufacturing the same |
CN104541381A (zh) * | 2012-10-22 | 2015-04-22 | 夏普株式会社 | 氮化物半导体发光元件 |
US10505074B2 (en) | 2015-09-28 | 2019-12-10 | Nichia Corporation | Nitride semiconductor light emitting element including electron blocking structure layer |
JP2020194837A (ja) * | 2019-05-27 | 2020-12-03 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
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Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9524869B2 (en) * | 2004-03-11 | 2016-12-20 | Epistar Corporation | Nitride-based semiconductor light-emitting device |
US10164150B2 (en) * | 2012-03-29 | 2018-12-25 | Seoul Viosys Co., Ltd. | Near UV light emitting device |
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JP5953447B1 (ja) * | 2015-02-05 | 2016-07-20 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
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TWI717386B (zh) | 2016-09-19 | 2021-02-01 | 新世紀光電股份有限公司 | 含氮半導體元件 |
JP6669095B2 (ja) * | 2017-02-06 | 2020-03-18 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
DE102017121484A1 (de) * | 2017-06-21 | 2018-12-27 | Osram Opto Semiconductors Gmbh | Halbleiterkörper und Verfahren zur Herstellung eines Halbleiterkörpers |
CN110112273B (zh) * | 2019-05-10 | 2020-06-30 | 马鞍山杰生半导体有限公司 | 一种深紫外led外延结构及其制备方法和深紫外led |
JP6698925B1 (ja) * | 2019-08-06 | 2020-05-27 | 日機装株式会社 | 窒化物半導体発光素子 |
CN113161456A (zh) * | 2021-05-06 | 2021-07-23 | 厦门三安光电有限公司 | 氮化物发光二极管及其制作方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07283140A (ja) * | 1994-04-05 | 1995-10-27 | Nippon Telegr & Teleph Corp <Ntt> | 活性原子の供給制御方法 |
JPH08148718A (ja) * | 1994-09-19 | 1996-06-07 | Toshiba Corp | 化合物半導体装置 |
JP2000164922A (ja) | 1998-11-27 | 2000-06-16 | Sharp Corp | 半導体装置 |
JP2001015809A (ja) * | 1999-06-30 | 2001-01-19 | Toshiba Corp | 窒化物系半導体発光素子の製造方法、窒化物系半導体レーザ素子の製造方法、および窒化物系半導体レーザ素子 |
JP2001148507A (ja) | 1999-03-29 | 2001-05-29 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2002084038A (ja) * | 2000-07-07 | 2002-03-22 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2005026414A (ja) * | 2003-07-01 | 2005-01-27 | Sharp Corp | 窒化物半導体発光素子 |
JP2007201424A (ja) * | 2005-12-28 | 2007-08-09 | Mitsubishi Cable Ind Ltd | GaN系発光ダイオードの製造方法 |
JP2009130097A (ja) | 2007-11-22 | 2009-06-11 | Sharp Corp | Iii族窒化物半導体発光素子及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990014304A (ko) * | 1997-07-30 | 1999-02-25 | 아사구사 나오유끼 | 반도체 레이저, 반도체 발광 소자 및 그 제조 방법 |
US6838705B1 (en) | 1999-03-29 | 2005-01-04 | Nichia Corporation | Nitride semiconductor device |
US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
JP3453558B2 (ja) * | 2000-12-25 | 2003-10-06 | 松下電器産業株式会社 | 窒化物半導体素子 |
US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US20070290230A1 (en) * | 2003-09-25 | 2007-12-20 | Yasutoshi Kawaguchi | Nitride Semiconductor Device And Production Method Thereof |
JP2006108585A (ja) * | 2004-10-08 | 2006-04-20 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
KR20110110865A (ko) * | 2006-10-18 | 2011-10-07 | 니텍 인코포레이티드 | 수직구조의 심자외선 발광다이오드 |
WO2010051537A1 (en) * | 2008-10-31 | 2010-05-06 | The Regents Of The University Of California | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys |
KR20140039032A (ko) * | 2011-06-10 | 2014-03-31 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 질화 갈륨 반극성 기판들에서 낮은 저하 발광 다이오드 구조 |
-
2011
- 2011-02-17 WO PCT/JP2011/053358 patent/WO2011102411A1/ja active Application Filing
- 2011-02-17 EP EP11744697.1A patent/EP2538459B1/en active Active
- 2011-02-17 JP JP2012500641A patent/JP5426007B2/ja active Active
- 2011-02-17 CN CN201180019641.6A patent/CN102859723B/zh active Active
- 2011-02-17 US US13/579,174 patent/US8742440B2/en active Active
-
2014
- 2014-04-29 US US14/264,771 patent/US9331245B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07283140A (ja) * | 1994-04-05 | 1995-10-27 | Nippon Telegr & Teleph Corp <Ntt> | 活性原子の供給制御方法 |
JPH08148718A (ja) * | 1994-09-19 | 1996-06-07 | Toshiba Corp | 化合物半導体装置 |
JP2000164922A (ja) | 1998-11-27 | 2000-06-16 | Sharp Corp | 半導体装置 |
JP2001148507A (ja) | 1999-03-29 | 2001-05-29 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2001015809A (ja) * | 1999-06-30 | 2001-01-19 | Toshiba Corp | 窒化物系半導体発光素子の製造方法、窒化物系半導体レーザ素子の製造方法、および窒化物系半導体レーザ素子 |
JP2002084038A (ja) * | 2000-07-07 | 2002-03-22 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
JP2005026414A (ja) * | 2003-07-01 | 2005-01-27 | Sharp Corp | 窒化物半導体発光素子 |
JP2007201424A (ja) * | 2005-12-28 | 2007-08-09 | Mitsubishi Cable Ind Ltd | GaN系発光ダイオードの製造方法 |
JP2009130097A (ja) | 2007-11-22 | 2009-06-11 | Sharp Corp | Iii族窒化物半導体発光素子及びその製造方法 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9012921B2 (en) | 2011-09-29 | 2015-04-21 | Kabushiki Kaisha Toshiba | Light emitting devices having light coupling layers |
JP2014524676A (ja) * | 2011-09-29 | 2014-09-22 | 株式会社東芝 | 光結合層を有する発光素子 |
JP2014529190A (ja) * | 2011-09-29 | 2014-10-30 | 東芝テクノセンター株式会社 | 埋め込み電極を有する光結合層を有する発光素子 |
US9299881B2 (en) | 2011-09-29 | 2016-03-29 | Kabishiki Kaisha Toshiba | Light emitting devices having light coupling layers |
US9202969B2 (en) * | 2012-03-07 | 2015-12-01 | Samsung Electronics Co., Ltd. | Nitride semiconductor light emitting device and method of manufacturing the same |
US20150060764A1 (en) * | 2012-03-07 | 2015-03-05 | Samsung Electronics Co., Ltd. | Nitride semiconductor light emitting device and method of manufacturing the same |
JP2014063891A (ja) * | 2012-09-21 | 2014-04-10 | Toyoda Gosei Co Ltd | Iii族窒化物半導体発光素子の製造方法 |
CN104541381A (zh) * | 2012-10-22 | 2015-04-22 | 夏普株式会社 | 氮化物半导体发光元件 |
US20150137173A1 (en) * | 2012-10-22 | 2015-05-21 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting element |
US9450150B2 (en) * | 2012-10-22 | 2016-09-20 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting element |
KR102160068B1 (ko) * | 2013-05-22 | 2020-09-25 | 서울바이오시스 주식회사 | 발광 소자 및 그것을 제조하는 방법 |
KR20140137208A (ko) * | 2013-05-22 | 2014-12-02 | 서울바이오시스 주식회사 | 발광 소자 및 그것을 제조하는 방법 |
US10505074B2 (en) | 2015-09-28 | 2019-12-10 | Nichia Corporation | Nitride semiconductor light emitting element including electron blocking structure layer |
US10686098B2 (en) | 2015-09-28 | 2020-06-16 | Nichia Corporation | Nitride semiconductor light emitting element including electron blocking structure layer |
JP2020194837A (ja) * | 2019-05-27 | 2020-12-03 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
JP7140978B2 (ja) | 2019-05-27 | 2022-09-22 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
JP2021100032A (ja) * | 2019-12-20 | 2021-07-01 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
JP7448782B2 (ja) | 2019-12-20 | 2024-03-13 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
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