WO2011102077A1 - 電界放出電子銃及びその制御方法 - Google Patents
電界放出電子銃及びその制御方法 Download PDFInfo
- Publication number
- WO2011102077A1 WO2011102077A1 PCT/JP2011/000233 JP2011000233W WO2011102077A1 WO 2011102077 A1 WO2011102077 A1 WO 2011102077A1 JP 2011000233 W JP2011000233 W JP 2011000233W WO 2011102077 A1 WO2011102077 A1 WO 2011102077A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- charged particle
- particle beam
- current
- electron source
- beam apparatus
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/98—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/065—Source emittance characteristics
- H01J2237/0653—Intensity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/182—Obtaining or maintaining desired pressure
- H01J2237/1825—Evacuating means
Definitions
- the present invention relates to a field emission electron gun and a control method thereof, and more particularly to an electron gun equipped with a W ⁇ 310> field emission electron source and a control method thereof.
- the potential barrier When a strong electric field is applied to the metal surface, the potential barrier has an inclination at the boundary with the vacuum, but when the electric field exceeds 10 7 V / cm, the barrier becomes extremely thin, and electrons are emitted into the vacuum by the tunnel effect. This is called field emission.
- the variation in the energy of the emitted electrons is small, about 0.3 eV.
- the field emission electron source has a tip with a radius of curvature of about 100 nm in order to create a strong electric field.
- the spot diameter of the field emission electron source is as small as 5 to 10 nm, it is characterized by extremely high brightness and is often used as an electron gun for high resolution SEM and TEM. In addition, since the energy width of the emitted electrons is small, high resolution is easily obtained even at a low acceleration voltage.
- tungsten (W) needle Chip
- the adsorption layer is evaporated and a clean surface is obtained.
- the present inventor has found a feature of how the emission current from the W (310) plane is attenuated. Using this knowledge, an object is to disclose a method of using a field emission electron source more stably.
- a field emission electron source made of ⁇ 310> single crystal of tungsten, a vacuum chamber in which the electron source is disposed, an exhaust system for exhausting the vacuum chamber, and the electron source are connected to flow current.
- a charged particle beam apparatus comprising: a filament that heats the electron source; a power source that supplies current to the filament; and an ammeter that measures a total amount of current emitted from the electron source, wherein the total amount of current Is measured periodically, and the total current amount is the total current amount from the electron source immediately after the first electron beam emission, or the total current amount from the electron beam immediately after flowing the current through the filament.
- a charged particle beam apparatus comprising a control unit that controls the power source to flow a current through the filament when the ratio becomes a predetermined ratio or less.
- the exhaust system is characterized in that the pressure in the vacuum chamber is maintained at a level of 10 ⁇ 9 Pa or less.
- the inherent high brightness of the W ⁇ 310> field emission electron source can be utilized effectively.
- Field emission pattern of W chip The figure which shows an example of the arrangement structure around the electron source used by this invention.
- the change in pressure around the electron source can be determined by measuring the change in the decay time ⁇ .
- the electron microscope uses only a part of the probe current amount (Ip) that emerges from the tip end surface in the total emission current amount (Ie) of the electron beam emitted from the electron source.
- Attenuation area III In the case of Ip, it decays very slowly up to about 90% of the initial current. After that, the decay becomes faster and the amount of current suddenly drops. This falling area is named attenuation area III.
- the attenuation rate changes in the order of large (region I) ⁇ small (region II) ⁇ large (region III) as shown in FIG.
- the amount of Ie current becomes one-tenth of the initial value, but the current amount change stops and becomes stable.
- the amount of current is a few tenths immediately after flushing, it is used using this stable region.
- the different decay states of Ie and Ip are caused by the change in the work function of the tungsten surface due to hydrogen adsorption being different for each surface. Since the work function of the (111) plane increases from the initial stage due to hydrogen adsorption, the emission current from the (111) plane continues to attenuate to about several percent of the initial value. On the other hand, on the (310) plane, the work function does not increase in the initial hydrogen adsorption, and when the 90% decay time of the initial value is ⁇ 90 , full decay begins on average after ⁇ 90 hours (Ip curve in FIG. 4).
- the main component of Ie is the emission currents I (111) and I (310) from the (111) plane and the (310) plane, and Ip is the emission current I (310) in this experiment.
- the fast initial decay of Ie (region I) reflects the fast initial decay of I (111) .
- the reason why the decay of Ie is accelerated at the end of decay (region III) is that Ie and Ip are rapidly decayed simultaneously, that is, the decay rate of I (310) is rapidly increased.
- the region III that reflects the emission current attenuation from the (310) surface is used. , Ie does not attenuate as shown in FIG.
- the W ⁇ 310> field emission electron source is characterized in that the probe current amount Ip is not attenuated in the regions I and II.
- the probe current Ip only rises to a current amount that is half or less of the initial value before attenuation. This means that the brightness of the electron beam from the tip (310) surface of the chip used for image observation falls below half after attenuation.
- Radiation angle current density (probe current per unit solid angle) I ′ data measured while changing the total emission current Ie also shows that after attenuation, I ′ is less than half that before attenuation.
- the flushing timing an ammeter that measures the actual Ip is provided, and the timing ( ⁇ 90 ) at which Ip is 90% of the initial value, which is the time when Ip decays in earnest, is monitored.
- the flashing is controlled.
- ⁇ f the time at which full-scale attenuation of the probe current Ip begins is expressed as ⁇ f (in FIG. 4, the stable region (regions I and II) and the attenuation region ( Assuming the boundary of region III), high-intensity image observation is always possible when flushing is performed in accordance with ⁇ f .
- ⁇ f is usually close to ⁇ 90 , but depending on the surface state of the electron source, full-scale attenuation starts at a time different from ⁇ 90 as shown in FIG.
- FIG. 8A shows an attenuation curve when the surface of the electron source is clean, and full-scale attenuation starts near ⁇ 90 .
- the initial decay of the emission current becomes relatively fast as shown in FIG. Starts after ⁇ 90 . This is because the probe current Ip is emitted from a narrow nano-region of the (310) plane at the tip of the electron source, so that it becomes sensitive to the surface state of the electron source.
- the method is as follows.
- the flushing performed for cleaning the electron source surface is performed in accordance with the time ⁇ f when the probe current Ip is seriously attenuated, and electrons are emitted in the regions I and II where the electron beam emitted from the (310) plane maintains high luminance. Perform image observation with a microscope.
- the components are heated in a vacuum furnace with a pressure of 10 ⁇ 3 Pa or less and heated at 400 ° C. or more by degassing and electropolishing to reduce the outgassing amount.
- a ⁇ 310> single crystal field emission electron source is mounted, and the pressure around the electron source is maintained at 10 ⁇ 9 Pa or lower by using an exhaust system that can be lowered to 10 ⁇ 9 Pa or lower.
- FIG. 1 is a schematic diagram showing the configuration of an ultra-high vacuum electron gun and its control system according to an embodiment of the present invention.
- the ultrahigh vacuum electron gun has a W ⁇ 310> field emission electron source 1 and a vacuum chamber 2 using a W ⁇ 310> single crystal needle.
- the pressure in the electron gun chamber of the vacuum chamber 2 is maintained at an ultra high vacuum of 10 ⁇ 9 Pa or less.
- a present Example combines invention of Example 1 and invention of Example 2, it is also possible to use any one invention.
- an ultra-high vacuum electron gun is an exhaust that exhausts two vacuum chambers 2 and an ultra-vacuum chamber in which a W ⁇ 310> field emission electron source 1 produced by etching a W ⁇ 310> single crystal wire is used as an electron source.
- System 11 a flashing power supply 7 that allows current to flow through the filament 6 and the filament 6 for flushing tungsten that flows current to heat the W ⁇ 310> field emission electron source 1, and total that is emitted from the W ⁇ 310> field emission electron source 1
- An ammeter 8 for measuring the emission current Ie, a measured value of Ie sent from the ammeter 8, an appropriate flushing time of the W ⁇ 310> field emission electron source 1 is judged, and the flushing power supply 7 sends a current to the filament 6.
- W ⁇ 310> The electron source control unit 4 that controls the field emission electron source 1 to be cleaned, and the electron source control unit 4 have flushing timing and time.
- An operation unit 5 to enter the parameters for determining a flushing amount of current or the like.
- Flushing is performed by passing a current through the filament 6 for a certain period of time and raising the temperature of the W ⁇ 310> field emission electron source 1 to, for example, 1500 K or higher by energization heating.
- the current flow time is about several seconds at the maximum, and it is performed a plurality of times depending on the surface condition. As shown in FIG. 4, when the flushing is performed in accordance with the time ⁇ f at which full-scale attenuation of Ip begins, electron microscope image observation can be performed more effectively in the high luminance stable regions I and II.
- the flushing timing is determined by the following procedure. Flushing is performed by controlling the flushing power supply 7 in accordance with parameters such as current, voltage, power, and time input by the operation unit 5.
- the electron source control unit 4 controls the extraction power source 9, applies a positive extraction voltage to the extraction electrode 3, and determines the total determined by the operation unit 5.
- An electron beam having an emission current value Ie 0 is emitted from the W ⁇ 310> field emission electron source 1.
- the electron source control unit 4 stores the current value Ie 0 measured by the ammeter 8 in a memory.
- the ammeter 8 measures the total emission current measurement value Ie at intervals of several seconds and sends the measurement value to the electron source control unit 4.
- the electron source control unit 4 compares the transmitted total emission current measurement value Ie with the initial value Ie 0 stored in the memory. As shown in FIG. 7, the total emission current value Ie is 50% of the initial value. When it becomes less than a predetermined ratio Rx Ie 0 in the vicinity (for example, a predetermined value of 30% to 70%), flushing is performed to prevent the probe current from being attenuated.
- the flushing timing is automatically performed when the electron source control unit 4 detects Ie ⁇ Rx Ie 0 .
- the electron source control unit 4 monitors the operating state of the electron microscope and acquires electron microscope images such as secondary electron images, reflected electron images, EDX mapping images, and EELS mapping images, and spectra such as EDX, WDX, and EELS. Control is performed so that flushing is not performed while the image and spectrum are obtained, and the flushing is performed after a certain period of time.
- the electron source control unit 4 starts monitoring the operation state of the electron microscope from Ie ⁇ Rx Ie 0 , and automatically performs flushing when the electron microscope operator interrupts the electron microscope observation. For example, the timing of sample exchange is detected, and flushing is automatically performed during sample exchange.
- the timing of the valve operation for blocking the electron beam path between the W ⁇ 310> field emission electron source 1 and the sample is detected, and the valve is connected between the W ⁇ 310> field emission electron source 1 and the sample. Flushing is performed automatically while the interval is interrupted.
- the operation status of the electron microscope operator such as focus adjustment, field of view movement, magnification adjustment, etc. is monitored, and flushing is automatically performed when the electron microscope is not operated for a certain period of time.
- the electron source control unit 4 starts monitoring the operating state of the electron microscope from Ie ⁇ Rx Ie 0 and the electron microscope operator does not interrupt the electron microscope observation, the monitoring is started and after a certain time, Alternatively, for example, R ′ satisfying R ′ ⁇ R is determined in advance, and when Ie ⁇ R′xIe 0 , the electron source control unit 4 controls to automatically perform flushing. Also good.
- the electron source control unit 4 executes a command for displaying a message for prompting flushing on the operator's observation monitor when Ie ⁇ Rx Ie 0 , and a flushing start button disposed on the operation unit The flushing may be performed manually by the operator.
- a method for measuring the total emission current value Ie using a minute ammeter will be described.
- the current value may be measured by arranging a microammeter in series on either the W ⁇ 310> field emission electron source 1 side or the lead electrode 3 side wiring.
- the voltage applied to the W ⁇ 310> field emission electron source 1 maintains a constant value V 0 .
- V 0 the amount of current flowing through the ammeter A 2 13 disposed between the extraction power source 9 and the W ⁇ 310> field emission electron source 1 increases from the leak current I L1 to Ie + I L1 . . Therefore, if the difference between the current values before and after applying the extraction voltage is taken, it corresponds to the amount of emission current from the W ⁇ 310> field emission electron source 1.
- the Faraday cup 23 has a voltage of 0. As a result, the leakage current does not occur.
- the current value measured by the ammeter A 3 14 between the Faraday cup 23 and the ground is a value Ie ⁇ Ip excluding the current Ip passing through the aperture of the Faraday cup 23.
- Ie is smaller than Ie, the ammeter A 3 A current value measured at 14 may be used as Ie.
- the probe current Ip emitted from the tip (310) of the electron source tip is immediately after the flushing when the brightness is stable and before the attenuation (regions I and II in FIG. 4). In order to use it, it is necessary to extend the time in the regions I and II. If the pressure in the vacuum chamber 2 provided by the W ⁇ 310> field emission electron source 1 is maintained at 10 ⁇ 9 Pa level or less, the time in the regions I and II becomes 30 minutes or more.
- the vacuum system of the W ⁇ 310> field emission electron source 1 mounted electron gun is constructed as described below, so that the pressure around the W ⁇ 310> field emission electron source 1 mounted electron gun is 10 ⁇ 9 Pa level. Below.
- All the components and the vacuum vessel in the vacuum chamber 2 in which the W ⁇ 310> field emission electron source 1 is arranged are made of a material that can be heated to 300 ° C. or higher, and a vacuum furnace that maintains a pressure of 10 ⁇ 3 Pa or lower. Degas for at least 1 hour. Polishing metal parts before degassing reduces the amount of outgassing, but is not a requirement.
- a non-evaporable getter pump 16 and an ion pump 17 having an exhaust speed of 1 l / s or more are used in combination as shown in FIG.
- a titanium sublimation pump 18 and an ion pump 17 are used in combination as an exhaust system of the vacuum chamber 2 provided by the W ⁇ 310> field emission electron source 1.
- a cryopump 19 is used as an exhaust system of the ultra-high vacuum vacuum chamber 2 provided by the W ⁇ 310> field emission electron source 1.
- the ultra-high vacuum vacuum chamber 2 has an exhaust speed of 100 l / s or more as an exhaust system of the vacuum chamber 2 provided with the W ⁇ 310> field emission electron source 1.
- the first-stage turbo molecular pump 20 is evacuated, and the two-stage turbo molecular pump 21 is attached to the outlet of the first-stage turbo molecular pump 20 and the auxiliary pump 22 is attached to the outlet of the second-stage turbo molecular pump 21 to exhaust the gas.
- the pressure around the W ⁇ 310> field emission electron source 1 is set to the order of 10 ⁇ 9 Pa or less by the above method, the time of the regions I and II can be extended, and the W ⁇ 310> field emission electron source is increased.
- the original high brightness can be utilized effectively.
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
2 真空室
3 引き出し電極
4 電子源制御部
5 操作部
6 フィラメント
7 フラッシング電源
8 電流計
9 引き出し電源
10 加速電源
11 排気系
12 電流計A1
13 電流計A2
14 電流計A3
15 極細引き出し電極
16 非蒸発ゲッターポンプ(NEG)
17 イオンポンプ
18 チタンサブレメーションポンプ
19 クライオポンプ
20 1段ターボ分子ポンプ
21 2段ターボ分子ポンプ
22 補助ポンプ
23 ファラデーカップ
Claims (14)
- タングステンの<310>単結晶からなる電界放出電子源と、
当該電子源が配置される真空室と、前記真空室を排気する排気系と、
前記電子源と接続され、電流を流して前記電子源を加熱するフィラメントと、当該フィラメントに電流を流す電源と、当該電子源から放出される総電流量を測定する電流計と、を備える荷電粒子線装置であって、
前記総電流量を定期的に測定し、当該総電流量が、最初の電子線放出直後の前記電子源からの総電流量、または前記フィラメントに電流を流した直後の前記電子線からの総電流量に対して所定の比率以下になったときに、前記電源が前記フィラメントに電流を流すように制御する制御部を備えることを特徴とする荷電粒子線装置。 - 請求項1の荷電粒子線装置において、
前記制御部は、当該総電流量が、電子線放出直後あるいは前記フィラメントに電流を流した直後の総電流量に対して半分になったときに、前記電源が前記フィラメントに電流を流すように制御することを特徴とする荷電粒子線装置。 - 請求項1の荷電粒子線装置において、
制御部にフィラメントに電流を流す時期,電流を流す時間、及び電流量を決めるパラメータを入力する操作部を備えたことを特徴とする荷電粒子線装置。 - 請求項1の荷電粒子線装置において、
前記排気系は、前記真空室の圧力を10-9Pa台以下に維持することを特徴とする荷電粒子線装置。 - 請求項1の荷電粒子線装置において、
前記フィラメントに一定時間1回又は複数回電流を流し、通電加熱によって前記電子源の温度を1500K以上にあげることを特徴とする荷電粒子線装置。 - 請求項1の荷電粒子線装置において、
前記制御部は、試料から放出された信号を検出している間は、前記電子源に電流を流す制御を中止することを特徴とする荷電粒子線装置。 - 請求項1の荷電粒子線装置において、
前記制御部は、当該荷電粒子線装置が操作されている間は、前記電子源に電流を流す制御を中止することを特徴とする荷電粒子線装置。 - 請求項1の荷電粒子線装置において、
当該荷電粒子線装置はモニターを備え、
前記制御部は、当該総電流量が、最初の電子線放出直後の前記電子源からの総電流量、または前記フィラメントに電流を流した直後の前記電子線からの総電流量に対して所定の比率以下になったときに、前記モニター上に、前記フィラメントに電流を流すことを促すメッセージを表示することを特徴とする荷電粒子線装置。 - 請求項1記載の荷電粒子線装置において、
前記引き出し電極は金属の細線からなり、電子線が当たるグラウンド側にファラデーカップを設け、前記ファラデーカップとグラウンドの間に電流計を配置することを特徴とする荷電粒子線装置。 - 請求項4記載の荷電粒子線装置において、
前記真空室内部品及び真空室は、300℃以上加熱可能な材料で作製され、10-3Pa台以下の圧力を維持する真空炉で1時間以上300℃以上の温度で脱ガスの処理が施されたことを特徴とする荷電粒子線装置。 - 請求項4記載の荷電粒子線装置において、
前記排気系として非蒸発ゲッターポンプと1l/s以上の排気速度を持つイオンポンプを併用することを特徴とする荷電粒子線装置。 - 請求項4記載の荷電粒子線装置において、
前記排気系として、チタンサブレメーションポンプ
とイオンポンプを併用することを特徴とする荷電粒子線装置。 - 請求項4記載の荷電粒子線装置において、
前記排気系として、クライオポンプ
を用いることを特徴とする荷電粒子線装置。 - 請求項4記載の荷電粒子線装置において、
前記排気系として、100l/s以上の排気速度を持つ1段ターボ分子ポンプと、前記1段ターボ分子ポンプの排出口に配置された2段ターボ分子ポンプと、前記2段ターボ分子ポンプの排出口に配置された補助ポンプからなることを特徴とする荷電粒子線装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112011100597.0T DE112011100597B4 (de) | 2010-02-18 | 2011-01-19 | Feldemissions-Elektronenkanone und Verfahren zu deren Steuerung |
US13/577,998 US8766542B2 (en) | 2010-02-18 | 2011-01-19 | Field-emission electron gun and method for controlling same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-033048 | 2010-02-18 | ||
JP2010033048A JP5455700B2 (ja) | 2010-02-18 | 2010-02-18 | 電界放出電子銃及びその制御方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011102077A1 true WO2011102077A1 (ja) | 2011-08-25 |
Family
ID=44482686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/000233 WO2011102077A1 (ja) | 2010-02-18 | 2011-01-19 | 電界放出電子銃及びその制御方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8766542B2 (ja) |
JP (1) | JP5455700B2 (ja) |
DE (1) | DE112011100597B4 (ja) |
WO (1) | WO2011102077A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014181685A1 (ja) * | 2013-05-10 | 2014-11-13 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8779376B2 (en) * | 2012-01-09 | 2014-07-15 | Fei Company | Determination of emission parameters from field emission sources |
JP6118142B2 (ja) * | 2013-03-08 | 2017-04-19 | 株式会社ニューフレアテクノロジー | 電子銃装置、描画装置、電子銃電源回路のリーク電流測定方法、及び電子銃電源回路のリーク電流判定方法 |
WO2015053300A1 (ja) * | 2013-10-10 | 2015-04-16 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡 |
US10692692B2 (en) | 2015-05-27 | 2020-06-23 | Kla-Tencor Corporation | System and method for providing a clean environment in an electron-optical system |
JP6579052B2 (ja) * | 2016-07-12 | 2019-09-25 | 株式会社ニューフレアテクノロジー | 電子ビーム描画装置及び電子ビーム描画方法 |
DE102016124673B3 (de) * | 2016-12-16 | 2018-05-30 | Ketek Gmbh | Vorrichtung zur Erzeugung eines Quellenstroms von Ladungsträgern mittels Feldemission und Verfahren zur Stabilisierung eines mittels eines Feldemissionselements emittierten Quellenstroms von Ladungsträgern |
WO2019155540A1 (ja) * | 2018-02-07 | 2019-08-15 | 株式会社日立ハイテクノロジーズ | クリーニング装置 |
JP2020027779A (ja) * | 2018-08-16 | 2020-02-20 | 日本電子株式会社 | 電子顕微鏡およびその制御方法 |
JP7022837B2 (ja) * | 2018-08-27 | 2022-02-18 | 株式会社日立ハイテク | 電子源とその製造方法およびそれを用いた電子線装置 |
CN111048382B (zh) | 2018-10-12 | 2021-03-23 | 中国电子科技集团公司第三十八研究所 | 电子源制造方法 |
CN111048372B (zh) | 2018-10-12 | 2021-04-27 | 中国电子科技集团公司第三十八研究所 | 一种电子源工作方法 |
CN111048373B (zh) | 2018-10-12 | 2021-04-27 | 中国电子科技集团公司第三十八研究所 | 一种电子源再生方法 |
CN111048383B (zh) | 2018-10-12 | 2021-01-15 | 中国电子科技集团公司第三十八研究所 | 电子源和电子枪 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5246756A (en) * | 1975-10-11 | 1977-04-13 | Hitachi Ltd | Field-emission type electron gun |
JPH11111205A (ja) * | 1997-09-29 | 1999-04-23 | Hitachi Ltd | 電界放出型電子銃を備えた粒子線装置及びその加熱脱ガス方法 |
JP2007073521A (ja) * | 2005-09-05 | 2007-03-22 | Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh | 荷電粒子ビーム照射デバイス及び荷電粒子ビーム照射デバイスを動作させるための方法 |
JP2008140623A (ja) * | 2006-11-30 | 2008-06-19 | Japan Science & Technology Agency | 電子線源装置 |
JP2009004112A (ja) * | 2007-06-19 | 2009-01-08 | Hitachi High-Technologies Corp | 荷電粒子線装置およびその真空立上げ方法 |
JP2009187938A (ja) * | 1997-09-10 | 2009-08-20 | Applied Materials Inc | 真空シール装置 |
WO2009153939A1 (ja) * | 2008-06-20 | 2009-12-23 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置、及びその制御方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5825035A (en) * | 1993-03-10 | 1998-10-20 | Hitachi, Ltd. | Processing method and apparatus using focused ion beam generating means |
US7994474B2 (en) * | 2004-02-23 | 2011-08-09 | Andreas Hieke | Laser desorption ionization ion source with charge injection |
JP4317779B2 (ja) * | 2004-03-26 | 2009-08-19 | 株式会社日立ハイテクノロジーズ | 電界放出型電子銃およびそれを用いた電子ビーム応用装置 |
JP2008047309A (ja) * | 2006-08-11 | 2008-02-28 | Hitachi High-Technologies Corp | 電界放出型電子銃、およびその運転方法 |
EP2068339A4 (en) * | 2006-09-27 | 2012-02-29 | Denki Kagaku Kogyo Kk | ELECTRON SOURCE |
US7853364B2 (en) * | 2006-11-30 | 2010-12-14 | Veeco Instruments, Inc. | Adaptive controller for ion source |
US7888654B2 (en) | 2007-01-24 | 2011-02-15 | Fei Company | Cold field emitter |
US7573046B1 (en) * | 2007-03-26 | 2009-08-11 | Kla-Tencor Technologies Corporation | Thermal field emission electron gun with reduced arcing |
WO2008140080A1 (ja) * | 2007-05-16 | 2008-11-20 | Denki Kagaku Kogyo Kabushiki Kaisha | 電子源 |
GB2451480B (en) * | 2007-07-31 | 2011-11-02 | Vistec Lithography Ltd | Pattern writing on a rotaing substrate |
JP2011014244A (ja) * | 2009-06-30 | 2011-01-20 | Hitachi High-Technologies Corp | 荷電粒子銃及び荷電粒子線装置 |
US8288950B2 (en) * | 2009-10-06 | 2012-10-16 | The United States Of America, As Represented By The Secretary Of The Navy | Apparatus and method for regulating the output of a plasma electron beam source |
-
2010
- 2010-02-18 JP JP2010033048A patent/JP5455700B2/ja active Active
-
2011
- 2011-01-19 US US13/577,998 patent/US8766542B2/en active Active
- 2011-01-19 WO PCT/JP2011/000233 patent/WO2011102077A1/ja active Application Filing
- 2011-01-19 DE DE112011100597.0T patent/DE112011100597B4/de not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5246756A (en) * | 1975-10-11 | 1977-04-13 | Hitachi Ltd | Field-emission type electron gun |
JP2009187938A (ja) * | 1997-09-10 | 2009-08-20 | Applied Materials Inc | 真空シール装置 |
JPH11111205A (ja) * | 1997-09-29 | 1999-04-23 | Hitachi Ltd | 電界放出型電子銃を備えた粒子線装置及びその加熱脱ガス方法 |
JP2007073521A (ja) * | 2005-09-05 | 2007-03-22 | Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh | 荷電粒子ビーム照射デバイス及び荷電粒子ビーム照射デバイスを動作させるための方法 |
JP2008140623A (ja) * | 2006-11-30 | 2008-06-19 | Japan Science & Technology Agency | 電子線源装置 |
JP2009004112A (ja) * | 2007-06-19 | 2009-01-08 | Hitachi High-Technologies Corp | 荷電粒子線装置およびその真空立上げ方法 |
WO2009153939A1 (ja) * | 2008-06-20 | 2009-12-23 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置、及びその制御方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014181685A1 (ja) * | 2013-05-10 | 2014-11-13 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
CN105190824A (zh) * | 2013-05-10 | 2015-12-23 | 株式会社日立高新技术 | 带电粒子线装置 |
JP5853122B2 (ja) * | 2013-05-10 | 2016-02-09 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
US9349567B2 (en) | 2013-05-10 | 2016-05-24 | Hitachi High-Technologies Corporation | Charged particle beam device |
CN105190824B (zh) * | 2013-05-10 | 2016-11-23 | 株式会社日立高新技术 | 带电粒子线装置 |
Also Published As
Publication number | Publication date |
---|---|
DE112011100597B4 (de) | 2015-08-13 |
JP5455700B2 (ja) | 2014-03-26 |
US8766542B2 (en) | 2014-07-01 |
DE112011100597T5 (de) | 2013-01-31 |
JP2011171088A (ja) | 2011-09-01 |
US20130200788A1 (en) | 2013-08-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5455700B2 (ja) | 電界放出電子銃及びその制御方法 | |
EP1993119B1 (en) | Charged particle beam emitting device and method for operating a charged particle beam emitting device | |
JP6054929B2 (ja) | 荷電粒子線装置、及びその制御方法 | |
JP5853122B2 (ja) | 荷電粒子線装置 | |
JP5054226B2 (ja) | 酸素の検出方法,空気リークの判別方法,ガス成分検出装置,及び真空処理装置 | |
US8143589B2 (en) | Stable emission gas ion source and method for operation thereof | |
US20110233401A1 (en) | Focused ion beam apparatus | |
JP6501891B2 (ja) | イオンビーム装置およびガス電界電離イオン源の洗浄方法 | |
US20080284332A1 (en) | Gun chamber, charged particle beam apparatus and method of operating same | |
JP2010010125A (ja) | 荷電粒子線装置 | |
JP4206598B2 (ja) | 質量分析装置 | |
JP2011124099A (ja) | 荷電粒子線装置のエミッタ、その製造方法、および当該エミッタを備える荷電粒子線装置 | |
JP2003242916A (ja) | 電子線装置及びその高電圧放電防止方法 | |
TW202013410A (zh) | 用於具有一擴散障壁之電子發射器之金屬保護層 | |
JP2008251300A (ja) | X線検査装置 | |
JP2008140623A (ja) | 電子線源装置 | |
JP3406199B2 (ja) | 電界放出型電子銃を備えた粒子線装置及びその加熱脱ガス方法 | |
WO2014171287A1 (ja) | 荷電粒子線装置 | |
WO2017134817A1 (ja) | 電界電離イオン源、イオンビーム装置、およびビーム照射方法 | |
JP2000195454A (ja) | 電子線装置 | |
JP4339948B2 (ja) | 熱陰極電離真空計 | |
WO2015053300A1 (ja) | 電子顕微鏡 | |
WO2000068970A1 (fr) | Appareil a faisceau electronique, et inspection d'un canon a electrons | |
WO2023067681A1 (ja) | 荷電粒子線装置 | |
WO2023037545A1 (ja) | イオンビーム装置、エミッタティップ加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11744372 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1120111005970 Country of ref document: DE Ref document number: 112011100597 Country of ref document: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13577998 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11744372 Country of ref document: EP Kind code of ref document: A1 |