WO2011096368A1 - 微細凹凸構造を表面に有する物品の製造方法 - Google Patents
微細凹凸構造を表面に有する物品の製造方法 Download PDFInfo
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- WO2011096368A1 WO2011096368A1 PCT/JP2011/051946 JP2011051946W WO2011096368A1 WO 2011096368 A1 WO2011096368 A1 WO 2011096368A1 JP 2011051946 W JP2011051946 W JP 2011051946W WO 2011096368 A1 WO2011096368 A1 WO 2011096368A1
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- photocurable composition
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- substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C33/00—Moulds or cores; Details thereof or accessories therefor
- B29C33/42—Moulds or cores; Details thereof or accessories therefor characterised by the shape of the moulding surface, e.g. ribs or grooves
- B29C33/424—Moulding surfaces provided with means for marking or patterning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C2059/027—Grinding; Polishing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C2791/00—Shaping characteristics in general
- B29C2791/004—Shaping under special conditions
- B29C2791/005—Using a particular environment, e.g. sterile fluids other than air
Definitions
- the present invention relates to a method for producing a photocurable composition, a photocurable composition obtained by the production method, and an article obtained using the photocurable composition.
- a liquid photocuring in which a mold having an inverted structure of the fine concavo-convex structure on the surface is disposed on the surface of the substrate.
- a method for forming a fine concavo-convex structure on the surface of a substrate by pressing the photocurable composition, irradiating the photocurable composition with light, and curing the photocurable composition.
- a mold used for the optical imprint method a mold made of quartz glass that transmits light is often used because a silicon wafer as a base material does not transmit light in the manufacture of a semiconductor device.
- the photocurable composition when the mold is pressed against the liquid photocurable composition, the photocurable composition may not be filled to every corner of the concave portion in the inverted structure of the mold, and bubbles may remain in the concave portion. .
- the photocurable composition is cured with air bubbles remaining in the concave portions of the mold, defects (defects) derived from the air bubbles are generated in the convex portions of the formed fine uneven structure.
- the present invention provides a method by which an article having a fine concavo-convex structure on its surface can be manufactured with high productivity while suppressing defects generated in the fine concavo-convex structure.
- the method for producing an article having a fine concavo-convex structure on the surface according to the present invention includes the following steps (i) to (iii), wherein the following mold contains TiO 2 -containing quartz glass, and at least the following step (i ) In a helium gas atmosphere; (I) A step of sandwiching the photocurable composition between the mold and the substrate so as to contact the surface having the inverted structure of the mold having the inverted structure of the fine concavo-convex structure on the surface; (Ii) a step of irradiating the photocurable composition with light in a state where the photocurable composition is sandwiched between the mold and the substrate to cure the photocurable composition to obtain a cured product; (Iii) A step of separating the mold from the cured product to obtain an article having a cured product on the surface of which the fine uneven structure is formed on the surface.
- the arithmetic average roughness Ra of the bottom surface of the concave portion in the inverted structure of the fine concavo-convex structure is preferably 1 to 30 nm in the mold.
- the mold preferably contains TiO 2 -containing quartz glass having a TiO 2 concentration of 2 to 10% by mass.
- the helium gas atmosphere is preferably an atmosphere having a helium gas concentration of 50% by volume or more.
- an article having a fine concavo-convex structure on its surface can be produced with high productivity while suppressing defects generated in the fine concavo-convex structure.
- FIG. 1 is a cross-sectional view showing one step in a method ( ⁇ ) of sandwiching a photocurable composition between a mold and a substrate.
- FIG. 2 is a cross-sectional view showing one step in the method ( ⁇ ) of sandwiching the photocurable composition between the mold and the substrate.
- FIG. 3 is a cross-sectional view showing one step in the method ( ⁇ ) of sandwiching the photocurable composition between the mold and the substrate.
- FIG. 4 is a cross-sectional view showing one step in the method ( ⁇ ) of sandwiching the photocurable composition between the mold and the substrate.
- FIG. 5 is a cross-sectional view showing one step in a method ( ⁇ ) of sandwiching a photocurable composition between a mold and a substrate.
- FIG. 6 is a cross-sectional view showing one step in a method ( ⁇ ) of sandwiching a photocurable composition between a mold and a substrate.
- FIG. 7 is a cross-sectional view showing an example of an article having a fine relief structure on the surface.
- the method for producing an article having a fine concavo-convex structure on the surface according to the present invention is a method having the following steps (i) to (iii).
- a mold containing TiO 2 -containing quartz glass is used, and at least step (i) is performed in a helium gas atmosphere.
- TiO 2 -containing quartz glass TiO 2 —SiO 2 glass
- SiO 2 —SiO 2 glass is excellent in gas permeability compared to quartz glass not containing TiO 2 (SiO 2 glass), and in particular, is excellent in helium gas permeability. For this reason, even if helium gas bubbles remain in the recesses in the mold reversal structure, the bubbles are formed in a relatively short time compared to when the atmosphere is used or when a mold made of quartz glass not containing TiO 2 is used. Absorbed by the mold.
- the helium gas atmosphere is an atmosphere containing helium gas as a main component, and the concentration of helium gas is preferably 50% by volume or more, more preferably 75% by volume or more, and still more preferably 90% by volume or more.
- steps (i) to (iii) may be performed in a helium gas atmosphere, but only step (i) is performed in a helium gas atmosphere from the viewpoint of minimizing the amount of helium gas used. Preferably it is done. If at least the step (i) is performed in a helium gas atmosphere, the effects of the present invention can be sufficiently exerted.
- the mold has a reverse structure of a fine concavo-convex structure on the surface.
- the inverted structure of the fine concavo-convex structure is a structure obtained by inverting the fine concavo-convex structure on the surface of the target article, and includes a plurality of fine convex portions and / or concave portions.
- protrusion scattered on the surface, etc. are mentioned.
- the recess include a long groove extending on the surface of the mold and holes scattered on the surface.
- Examples of the shape of the ridge or groove include a straight line, a curved line, a bent shape, and the like. A plurality of ridges or grooves may exist in parallel and have a stripe shape. Examples of the cross-sectional shape of the ridge or groove in the direction perpendicular to the longitudinal direction include a rectangle, a trapezoid, a triangle, and a semicircle. Examples of the shape of the protrusion or hole include a triangular prism, a quadrangular prism, a hexagonal prism, a cylinder, a triangular pyramid, a quadrangular pyramid, a hexagonal pyramid, a cone, a hemisphere, and a polyhedron.
- the average width of the ridges or grooves is preferably 1 nm to 500 ⁇ m, more preferably 10 nm to 100 ⁇ m, and even more preferably 15 nm to 10 ⁇ m.
- the width of the ridge means the length of the base in the cross section in the direction orthogonal to the longitudinal direction.
- the width of the groove means the length of the upper side in the cross section in the direction orthogonal to the longitudinal direction.
- the average width of the protrusions or holes is preferably 1 nm to 500 ⁇ m, more preferably 10 nm to 100 ⁇ m, and further preferably 15 nm to 10 ⁇ m.
- the width of the protrusion means the length of the bottom side in a cross section perpendicular to the longitudinal direction when the bottom surface is elongated, and otherwise means the maximum length of the bottom surface of the protrusion.
- the width of the hole means the length of the upper side in the cross section perpendicular to the longitudinal direction when the opening is elongated, and otherwise means the maximum length of the opening of the hole.
- the average height of the convex portions is preferably 1 nm to 500 ⁇ m, more preferably 10 nm to 100 ⁇ m, and further preferably 15 nm to 10 ⁇ m.
- the average depth of the recesses is preferably 1 nm to 500 ⁇ m, more preferably 10 nm to 100 ⁇ m, and even more preferably 15 nm to 10 ⁇ m.
- the interval between adjacent convex portions is preferably 1 nm to 500 ⁇ m on average, and more preferably 1 nm to 50 ⁇ m.
- the interval between adjacent convex portions means the distance from the end of the bottom of the cross section of the convex portion to the start of the bottom of the cross section of the adjacent convex portion.
- the interval between adjacent recesses means the distance from the end of the upper side of the cross section of the recess to the start end of the upper side of the cross section of the adjacent recess.
- the minimum dimension of the convex portion is preferably 1 nm to 50 ⁇ m, more preferably 1 nm to 500 nm, and particularly preferably 1 nm to 50 nm.
- the minimum dimension means the minimum dimension among the width, length, and height of the convex portion.
- the minimum dimension of the recess is preferably 1 nm to 50 ⁇ m, more preferably 1 nm to 500 nm, and particularly preferably 1 nm to 50 nm.
- the minimum dimension means the minimum dimension among the width, length and depth of the recess.
- the arithmetic average roughness Ra of the bottom surface of the recess is preferably 1 to 30 nm. If the arithmetic mean roughness Ra of the bottom surface of the recess is 1 nm or more, the area in contact with the helium gas is widened, and the permeability (absorbability) of the helium gas at the bottom surface is further improved. More preferably, it is 2 nm or more, More preferably, it is 5 nm or more. When the arithmetic average roughness Ra of the bottom surface of the concave portion exceeds 30 nm, the roughness of the bottom surface itself may be a defect in the convex portion of the fine uneven structure of the target article.
- Ra is preferably 1/2 or less with respect to the height of the convex portion or the depth of the concave portion.
- the arithmetic average roughness Ra is an arithmetic average roughness Ra defined in JIS B0601 (2001), and is measured using an atomic force microscope.
- TiO 2 —SiO 2 glass A mold containing TiO 2 -containing quartz glass (hereinafter referred to as TiO 2 —SiO 2 glass) is used as the mold because of its excellent helium gas permeability (absorbability). Since quartz glass not containing TiO 2 has insufficient helium gas permeability (absorbability) and it takes time for the bubbles to disappear, when using a mold made of quartz glass not containing TiO 2 , Productivity of an article having a fine concavo-convex structure on the surface is reduced.
- TiO 2 —SiO 2 glass is a quartz glass containing TiO 2 as a dopant.
- the TiO 2 concentration in the TiO 2 —SiO 2 glass (100% by mass) is preferably 2 to 10% by mass. If the TiO 2 concentration is 2 to 10% by mass, the permeability (absorbability) of helium gas is sufficiently high. More preferably, it is 3 to 8% by mass, and still more preferably 4 to 6.5% by mass.
- the TiO 2 concentration is measured using a fundamental parameter (FP) method in a fluorescent X-ray analysis method.
- FP fundamental parameter
- Mold containing TiO 2 -SiO 2 glass can be produced by a method to prepare a TiO 2 -SiO 2 glass substrate to form an inverted structure on the surface of the TiO 2 -SiO 2 glass substrate.
- Examples of the method for producing the TiO 2 —SiO 2 glass substrate include known methods such as a method having the following steps (a) to (f).
- C A step of heating the TiO 2 —SiO 2 dense body to a transparent vitrification temperature to obtain a transparent TiO 2 —SiO 2 glass body.
- (D) A step of obtaining the molded TiO 2 —SiO 2 glass body by heating and molding the transparent TiO 2 —SiO 2 glass body to a softening point or higher as necessary.
- (E) A step of annealing the transparent TiO 2 —SiO 2 glass body obtained in the step (c) or the molded TiO 2 —SiO 2 glass body obtained in the step (d) as necessary.
- (F) The TiO 2 —SiO 2 glass body obtained in any one of the steps (c) to (e) is subjected to mechanical processing such as cutting, cutting, grinding, polishing, etc., so that TiO having a predetermined shape is obtained. 2— Obtaining a SiO 2 glass substrate.
- the helium concentration in the heat treatment atmosphere is 1% or less in the step (b) for forming a dense body and the step after the step (c) in which the dense body is formed.
- the helium concentration in the resulting TiO 2 —SiO 2 glass substrate is reduced.
- the step (b) is more preferably reduced pressure, and more preferably reduced pressure in an atmosphere mainly composed of nitrogen gas or argon gas.
- the steps after the step (c) that has become a dense body are more preferably an atmosphere mainly containing nitrogen gas or argon gas, and more preferably an atmosphere mainly containing argon gas.
- etching dry etching is preferable, and specifically, reactive ion etching with SF 6 is preferable.
- Examples of the substrate of the article include an inorganic material substrate or an organic material substrate.
- Examples of the inorganic material include silicon wafer, glass, quartz glass, metal (aluminum, nickel, copper, etc.), metal oxide (alumina, etc.), silicon nitride, aluminum nitride, lithium niobate, and the like.
- Examples of the organic material include fluorine resin, silicone resin, acrylic resin, polycarbonate, polyester (polyethylene terephthalate, etc.), polyimide, polypropylene, polyethylene, nylon resin, polyphenylene sulfide, and cyclic polyolefin.
- a surface-treated substrate may be used from the viewpoint of excellent adhesion to the photocurable composition.
- the surface treatment include primer coating treatment, ozone treatment, plasma etching treatment, and the like.
- the primer include silane coupling agents and silazanes.
- Photocurable composition examples include radically polymerizable resin compositions, cationic polymerizable resin compositions, enthiol type resin compositions, fluorine-containing materials, organic-inorganic hybrid materials, and the like, or Photocurable compositions known in the literature such as the photocurable compositions described in paragraphs [0029] to [0074] of the specification of International Publication No. 2007/116972 can be used. From the viewpoint of productivity, a radical polymerization type resin composition that can be photocured by photoradical polymerization is preferred.
- Examples of a method for sandwiching the photocurable composition between the mold and the substrate include the following methods ( ⁇ ) to ( ⁇ ).
- Method ( ⁇ ) A method comprising the following steps ( ⁇ -1) and ( ⁇ -2).
- ( ⁇ -1) A step of disposing the photocurable composition 20 on the surface of the substrate 30 as shown in FIG. ( ⁇ -2)
- a step of pressing the mold 10 against the photocurable composition 20 so that the inverted structure of the plurality of concave portions 12 of the mold 10 is in contact with the photocurable composition 20 .
- Method ( ⁇ ) A method comprising the following steps ( ⁇ -1) and ( ⁇ -2).
- ( ⁇ -1) A step of placing the photocurable composition 20 on the surface of an inverted structure composed of a plurality of recesses 12 of the mold 10 as shown in FIG.
- ( ⁇ -2) A step of pressing the substrate 30 against the photocurable composition 20 on the surface of the mold 10 as shown in FIG.
- Method ( ⁇ ) A method comprising the following steps ( ⁇ -1) and ( ⁇ -2).
- ( ⁇ -1) As shown in FIG. 5, a step of bringing the base material 30 and the mold 10 into contact with or approaching so that the inverted structure of the mold 10 made up of the plurality of recesses 12 is on the base material 30 side.
- ( ⁇ -2) A step of filling the photocurable composition 20 between the base material 30 and the mold 10 as shown in FIG.
- Step ( ⁇ -1) Examples of the arrangement method of the photocurable composition include an inkjet method, a potting method, a spin coating method, a roll coating method, a casting method, a dip coating method, a die coating method, a Langmuir project method, and a vacuum deposition method.
- the photocurable composition may be disposed on the entire surface of the substrate or may be disposed on a part of the surface of the substrate.
- the pressing pressure (gauge pressure) when pressing the mold against the photocurable composition is preferably more than 0 to 10 MPa, more preferably 0.1 MPa to 5 MPa.
- the temperature at which the mold is pressed against the photocurable composition is preferably 0 to 100 ° C, more preferably 10 to 60 ° C.
- Step ( ⁇ -1) Examples of the arrangement method of the photocurable composition include an inkjet method, a potting method, a spin coating method, a roll coating method, a casting method, a dip coating method, a die coating method, a Langmuir project method, and a vacuum deposition method.
- the photocurable composition may be disposed on the entire surface of the reversal structure of the mold, may be disposed on a part of the reversal structure, or is preferably disposed on the entire surface of the reversal structure.
- the pressing pressure (gauge pressure) when pressing the substrate against the photocurable composition is preferably more than 0 to 10 MPa, more preferably 0.1 MPa to 5 MPa.
- the temperature at which the substrate is pressed against the photocurable composition is preferably 0 to 100 ° C, more preferably 10 to 60 ° C.
- Step ( ⁇ -2) Examples of the method for filling the photocurable composition between the substrate and the mold include a method of sucking the photocurable composition into the gap by capillary action.
- the temperature for filling the photocurable composition is preferably 0 to 100 ° C, more preferably 10 to 60 ° C.
- ⁇ Step (ii)> The state where the photocurable composition is sandwiched between the mold and the substrate is maintained for a certain period of time.
- the time from the completion of sandwiching the photocurable composition to the start of light irradiation to the photocurable composition is longer than the time necessary for the disappearance of the helium gas bubbles remaining in the recesses of the mold, and the productivity is increased.
- the time is not reduced, and the optimum time range is appropriately determined depending on the mold material, the temperature of the atmosphere, and the like.
- the time from the completion of sandwiching the photocurable composition to the start of light irradiation on the photocurable composition is preferably about 5 seconds to 3 minutes, more preferably about 10 to 30 seconds, and more preferably 10 to 10 seconds. More preferably, it is about 20 seconds.
- the light irradiation is usually performed from the mold side, but may be performed from the substrate side when the substrate has optical transparency.
- the wavelength of light is preferably 200 to 500 nm.
- curing may be promoted by heating the photocurable composition.
- the temperature at the time of irradiation with light is preferably 0 to 100 ° C., more preferably 10 to 60 ° C.
- Step (iii)> By separating the mold from the cured product, as shown in FIG. 7, the inverted structure composed of a plurality of recesses 12 of the mold 10 is transferred to form a fine concavo-convex structure composed of a plurality of projections 44 on the surface. An article 40 having the cured product 42 on the surface of the substrate 30 is obtained.
- the temperature at which the mold is separated from the cured product is preferably 0 to 100 ° C, more preferably 10 to 60 ° C.
- Examples of the article having a fine concavo-convex structure on the surface include the following.
- Optical element microlens array, optical waveguide element, optical switching element (grid polarization element, wave plate, etc.), Fresnel zone plate element, binary element, blaze element, photonic crystal, etc.
- Antireflective member AR (Anti Reflection) coating member, etc.
- Chips biochip, micro-total analysis system ( ⁇ -TAS) chip, microreactor chip, etc. Others: Recording media, display materials, catalyst carriers, filters, sensor members, nanoimprint daughter molds, etc.
- the article 40 of the present invention is an intermediate body in which a resist film (cured product 42) having a predetermined pattern is formed on a silicon wafer (base material 30) obtained during the manufacturing process of the semiconductor device, It is necessary to remove the thin resist remaining film existing on the bottom surface of the recess of the recess to expose the silicon surface.
- the method for removing the resist residual film include a method using oxygen reactive ion etching. After removing the resist residual film, etching is performed using the resist film as a mask, or aluminum or the like is deposited and then lifted off to be used for wiring.
- the mold contains TiO 2 -containing quartz glass. Since at least step (i) is performed in a helium gas atmosphere, even if helium gas bubbles remain in the recesses in the mold reversal structure, the bubbles are made of TiO 2 -containing quartz glass having excellent gas permeability. Is absorbed into the mold in a relatively short time. As a result, an article having a fine concavo-convex structure on its surface can be manufactured with high productivity while suppressing defects (defects) derived from bubbles that occur in the fine concavo-convex structure.
- Example 1 is an example and Example 2 is a comparative example.
- TiO 2 concentration The TiO 2 concentration in the TiO 2 -containing quartz glass is measured using a fundamental parameter (FP) method in a fluorescent X-ray analysis method.
- FP fundamental parameter
- Two quartz glass substrates are placed in a chamber that is an atmosphere of helium gas (100% by volume).
- a photocurable composition is disposed on the surface of one quartz-based glass substrate.
- the other quartz glass substrate is pressed against the photocurable composition. Bubbles having a size of about 50 ⁇ m existing between the photocurable composition and the quartz glass substrate sandwiching the photocurable composition are observed, and the time from the completion of the sandwiching of the photocurable composition to the disappearance of the bubbles is measured.
- Example 1 (Process (a)) TiCl 4 and SiCl 4 as glass forming raw materials are each gasified and then mixed, and TiO 2 —SiO 2 glass fine particles obtained by heating and hydrolyzing (flame hydrolysis) in an oxyhydrogen flame are deposited. Deposit and grow on the material to form a porous TiO 2 —SiO 2 glass body. Since the obtained porous TiO 2 —SiO 2 glass body is difficult to handle as it is, it is kept in the atmosphere at 1200 ° C. for 4 hours while being deposited on the deposition substrate, remove.
- the porous TiO 2 —SiO 2 glass body is kept under reduced pressure in an atmosphere mainly composed of nitrogen gas using a rotary pump and an oil diffusion pump and held at 1400 ° C. for 4 hours to obtain a dense TiO 2 —SiO 2 glass. Get the body.
- the main surface of the plate material is polished by about 50 ⁇ m with a polishing pad made of foamed polyurethane and an abrasive mainly composed of cerium oxide using a 20B double-side polish machine.
- the main surface of the plate material is polished by about 15 ⁇ m with a suede polishing pad and an abrasive mainly composed of cerium oxide, using a 24B double-side polish machine.
- a third polishing step is performed with another polishing machine to obtain a TiO 2 —SiO 2 glass substrate. In this third polishing step, a suede polishing pad and colloidal silica are used.
- the TiO 2 concentration of the obtained TiO 2 —SiO 2 glass substrate is measured.
- the TiO 2 concentration is 6.2% by mass.
- an imprint simulation test is performed using the obtained TiO 2 —SiO 2 glass substrate. The time until the disappearance of the bubbles is 17 seconds.
- a plurality of concave portions having a width of 100 nm and a depth of 30 nm are formed in parallel at a pitch of 200 nm on the surface of the TiO 2 —SiO 2 glass substrate by reactive ion etching with SF 6 to obtain a mold.
- arithmetic mean roughness Ra of the bottom face of a recessed part is measured. The average value is 14 nm.
- Example 2 (Process (a)) The SiO 2 glass fine particles obtained by gasifying SiCl 4 as a glass forming raw material and subjecting it to heat hydrolysis (flame hydrolysis) in an oxyhydrogen flame are deposited and grown on a deposition base material to obtain porous SiO 2. A glass body is formed. Since the obtained porous SiO 2 glass body is difficult to handle as it is, it is kept in the atmosphere at 1200 ° C. for 4 hours while being deposited on the deposition substrate, and then removed from the deposition substrate.
- Step (b), Step (c)) Thereafter, the porous SiO 2 glass body is kept under reduced pressure in an atmosphere containing nitrogen gas as a main component using a rotary pump and an oil diffusion pump and held at 1450 ° C. for 4 hours to obtain a transparent SiO 2 glass body.
- the obtained SiO 2 glass substrate measuring the concentration of TiO 2.
- the TiO 2 concentration is 0% by mass.
- an imprint simulation test is performed using the obtained SiO 2 glass substrate. The time until the disappearance of the bubbles is 21 seconds.
- a plurality of concave portions having a width of 100 nm and a depth of 30 nm are formed in parallel at a pitch of 200 nm on the surface of the SiO 2 glass substrate by reactive ion etching with SF 6 to obtain a mold.
- arithmetic mean roughness Ra of the bottom face of a recessed part is measured. The average value is 9 nm.
- the method for manufacturing an article having a fine concavo-convex structure on the surface thereof generates an article (an intermediate, an optical member, a recording medium, etc. in a semiconductor device manufacturing process) having the fine concavo-convex structure on the surface. It is useful as a method that can be manufactured with good productivity while suppressing defects.
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Abstract
Description
また、光インプリント法に用いられるモールドとしては、半導体装置の製造においては基材となるシリコンウエハが光を透過しないことから、光を透過する石英ガラスからなるモールドがよく用いられる。
(i)光硬化性組成物を、微細凹凸構造の反転構造を表面に有するモールドの該反転構造を有する表面に接触するように、該モールドと基材とで挟持する工程;
(ii)モールドと基材とで光硬化性組成物を挟持した状態で、光硬化性組成物に光を照射し、光硬化性組成物を硬化させて硬化物とする工程;
(iii)硬化物からモールドを分離して、微細凹凸構造が表面に形成された硬化物を基材の表面に有する物品を得る工程。
本発明の、微細凹凸構造を表面に有する物品の製造方法においては、該モールドが、TiO2濃度が2~10質量%のTiO2含有石英ガラスを含むものであることが好ましい。
本発明の、微細凹凸構造を表面に有する物品の製造方法においては、ヘリウムガス雰囲気がヘリウムガスの濃度が50体積%以上の雰囲気であることが好ましい。
(i)光硬化性組成物を、微細凹凸構造の反転構造を表面に有するモールドの該反転構造を有する表面に接触するように、該モールドと基材とで挟持する工程。
(ii)モールドと基材とで光硬化性組成物を挟持した状態で、光硬化性組成物に光を照射し、光硬化性組成物を硬化させて硬化物とする工程。
(iii)硬化物からモールドを分離して、微細凹凸構造が表面に形成された硬化物を基材の表面に有する物品を得る工程。
TiO2含有石英ガラス(TiO2-SiO2ガラス)は、TiO2を含まない石英ガラス(SiO2ガラス)に比べガスの透過性に優れ、特に、ヘリウムガスの透過性に優れる。そのため、モールドの反転構造における凹部にヘリウムガスの気泡が残っても、大気雰囲気下の場合や、TiO2を含まない石英ガラスからなるモールドを用いた場合に比べ、該気泡は比較的短時間でモールドに吸収される。
本発明の製造方法においては、工程(i)~(iii)をヘリウムガス雰囲気下で行ってもよいが、ヘリウムガスの使用量を極力抑える点から、工程(i)のみをヘリウムガス雰囲気下で行うことが好ましい。少なくとも工程(i)をヘリウムガス雰囲気下で行えば、本発明の効果を充分に発揮できる。
(モールド)
モールドは、微細凹凸構造の反転構造を表面に有するものである。
微細凹凸構造の反転構造は、目的とする物品の表面の微細凹凸構造を反転させた構造であり、複数の微細な凸部および/または凹部からなる。
凸部としては、モールドの表面に延在する長尺の凸条、表面に点在する突起等が挙げられる。
凹部としては、モールドの表面に延在する長尺の溝、表面に点在する孔等が挙げられる。
凸条または溝の、長手方向に直交する方向の断面形状としては、長方形、台形、三角形、半円形等が挙げられる。
突起または孔の形状としては、三角柱、四角柱、六角柱、円柱、三角錐、四角錐、六角錐、円錐、半球、多面体等が挙げられる。
突起または孔の幅は、平均で1nm~500μmが好ましく、10nm~100μmがより好ましく、15nm~10μmがさらに好ましい。突起の幅とは、底面が細長い場合、長手方向に直交する方向の断面における底辺の長さを意味し、そうでない場合、突起の底面における最大長さを意味する。孔の幅とは、開口部が細長い場合、長手方向に直交する方向の断面における上辺の長さを意味し、そうでない場合、孔の開口部における最大長さを意味する。
凹部の深さは、平均で1nm~500μmが好ましく、10nm~100μmがより好ましく、15nm~10μmがさらに好ましい。
凹部の最小寸法は、1nm~50μmが好ましく、1nm~500nmがより好ましく、1nm~50nmが特に好ましい。最小寸法とは、凹部の幅、長さおよび深さのうち最小の寸法を意味する。
Raは、凸部の高さまたは凹部の深さに対して1/2以下であることが好ましい。
算術平均粗さRaは、JIS B0601(2001年)に規定される算術平均粗さRaであり、原子間力顕微鏡を用いて測定する。
TiO2-SiO2ガラス(100質量%)中のTiO2濃度は、2~10質量%が好ましい。TiO2濃度が2~10質量%であれば、ヘリウムガスの透過性(吸収性)が充分に高くなる。より好ましくは、3~8質量%、さらに好ましくは4~6.5質量%である。
TiO2濃度は、蛍光X線分析法において、ファンダメンタルパラメーター(FP)法を用いて測定する。
(a)スート法によってSiO2前駆体およびTiO2前駆体を含むガラス形成原料から得られるTiO2-SiO2ガラス微粒子を、堆積させて多孔質TiO2-SiO2ガラス体を得る工程。
(b)前記多孔質TiO2-SiO2ガラス体を緻密化温度まで昇温してTiO2-SiO2緻密体を得る工程。
(c)前記TiO2-SiO2緻密体を透明ガラス化温度まで昇温して透明TiO2-SiO2ガラス体を得る工程。
(d)必要に応じて前記透明TiO2-SiO2ガラス体を軟化点以上に加熱して成形し、成形TiO2-SiO2ガラス体を得る工程。
(e)必要に応じて前記工程(c)で得られた透明TiO2-SiO2ガラス体または前記工程(d)で得られた成形TiO2-SiO2ガラス体をアニール処理する工程。
(f)前記工程(c)~(e)のいずれかで得られたTiO2-SiO2ガラス体に、切断、切削、研削、研磨等の機械加工を行うことにより、所定の形状を有するTiO2-SiO2ガラス基材を得る工程。
上記の工程において、緻密体を作る工程(b)や、緻密体となった工程(c)以降の工程において、熱処理雰囲気中のヘリウム濃度を1%以下とすることが好ましい。こうすることにより、得られるTiO2-SiO2ガラス基材中のヘリウム濃度が小さくなる。TiO2-SiO2ガラス基材中のヘリウム濃度が小さい方が、ヘリウムガスの透過性(吸収性)が良くなる。工程(b)は、減圧とすることがより好ましく、窒素ガスまたはアルゴンガスを主成分とする雰囲気にて、減圧とすることがさらに好ましい。また、緻密体となった工程(c)以降の工程は、窒素ガスまたはアルゴンガスを主成分とする雰囲気とすることがより好ましく、アルゴンガスを主成分とする雰囲気とすることがさらに好ましい。
物品の基材としては、無機材料製基材または有機材料製基材が挙げられる。
無機材料としては、シリコンウエハ、ガラス、石英ガラス、金属(アルミニウム、ニッケル、銅等)、金属酸化物(アルミナ等)、窒化珪素、窒化アルミニウム、ニオブ酸リチウム等が挙げられる。
有機材料としては、フッ素樹脂、シリコーン樹脂、アクリル樹脂、ポリカーボネート、ポリエステル(ポリエチレンテレフタレート等)、ポリイミド、ポリプロピレン、ポリエチレン、ナイロン樹脂、ポリフェニレンサルファイド、環状ポリオレフィン等が挙げられる。
光硬化性組成物としては、ラジカル重合型樹脂組成物、カチオン重合型樹脂組成物、エンーチオール型樹脂組成物、フッ素含有材料、有機-無機ハイブリッド材料等、の公知の光インプリント用材料、または、国際公開第2007/116972号パンフレットの明細書段落[0029]~[0074]に記載の光硬化性組成物等、文献公知の光硬化性組成物を用いることができる。生産性の点から、光ラジカル重合により光硬化しうるラジカル重合形樹脂組成物が好ましい。
光硬化性組成物をモールドと基材とで挟持する方法としては、下記の方法(α)~(γ)が挙げられる。
下記の工程(α-1)、(α-2)を有する方法。
(α-1)図1に示すように、光硬化性組成物20を基材30の表面に配置する工程。
(α-2)図2に示すように、モールド10を、該モールド10の、複数の凹部12からなる反転構造が光硬化性組成物20に接するように、光硬化性組成物20に押しつける工程。
下記の工程(β-1)、(β-2)を有する方法。
(β-1)図3に示すように、光硬化性組成物20を、モールド10の、複数の凹部12からなる反転構造の表面に配置する工程。
(β-2)図4に示すように、基材30をモールド10の表面の光硬化性組成物20に押しつける工程。
下記の工程(γ-1)、(γ-2)を有する方法。
(γ-1)図5に示すように、基材30とモールド10とを、モールド10の、複数の凹部12からなる反転構造が基材30側になるように接触または接近させる工程。
(γ-2)図6に示すように、光硬化性組成物20を基材30とモールド10との間に充填する工程。
光硬化性組成物の配置方法としては、インクジェット法、ポッティング法、スピンコート法、ロールコート法、キャスト法、ディップコート法、ダイコート法、ラングミュラープロジェット法、真空蒸着法等が挙げられる。
光硬化性組成物は、基材の全面に配置してもよく、基材の表面の一部に配置してもよい。
モールドを光硬化性組成物に押しつける際のプレス圧力(ゲージ圧)は、0超~10MPa以下が好ましく、0.1MPa~5MPaがより好ましい。モールドを光硬化性組成物に押しつける際の温度は、0~100℃が好ましく、10~60℃がより好ましい。
光硬化性組成物の配置方法としては、インクジェット法、ポッティング法、スピンコート法、ロールコート法、キャスト法、ディップコート法、ダイコート法、ラングミュラープロジェット法、真空蒸着法等が挙げられる。
光硬化性組成物は、モールドの反転構造の全面に配置してもよく、反転構造の一部に配置してもよく、反転構造の全面に配置することが好ましい。
基材を光硬化性組成物に押しつける際のプレス圧力(ゲージ圧)は、0超~10MPa以下が好ましく、0.1MPa~5MPaがより好ましい。基材を光硬化性組成物に押しつける際の温度は、0~100℃が好ましく、10~60℃がより好ましい。
光硬化性組成物を基材とモールドとの間に充填する方法としては、毛細管現象により空隙に光硬化性組成物を吸引する方法が挙げられる。
光硬化性組成物を充填する際の温度は、0~100℃が好ましく、10~60℃がより好ましい。
モールドと基材とで光硬化性組成物を挟持した状態をある程度の時間維持する。光硬化性組成物の挟持完了から光硬化性組成物への光照射開始までの時間は、モールドの凹部に残ったヘリウムガスの気泡が消失するのに必要な充分な時間以上、かつ生産性を低下させない時間以下であり、モールドの材料、雰囲気の温度等によって最適な時間の範囲は適宜決定される。光硬化性組成物の挟持完了から光硬化性組成物への光照射開始までの時間は、5秒~3分程度であることが好ましく、10~30秒程度であることがより好ましく、10~20秒程度であることがさらに好ましい。
光を照射する際の温度は、0~100℃が好ましく、10~60℃がより好ましい。
硬化物からモールドを分離することにより、図7に示すような、モールド10の、複数の凹部12からなる反転構造が転写されることによって、複数の凸部44からなる微細凹凸構造が表面に形成された硬化物42を基材30の表面に有する物品40が得られる。
硬化物からモールドを分離する際の温度は、0~100℃が好ましく、10~60℃がより好ましい。
半導体装置の製造工程の途中で得られる、シリコンウエハ上に所定パターンのレジスト膜を形成した中間体。
光学素子:マイクロレンズアレイ、光導波路素子、光スイッチング素子(グリッド偏光素子、波長板等。)、フレネルゾーンプレート素子、バイナリー素子、ブレーズ素子、フォトニック結晶等。
反射防止部材:AR(Anti Reflection)コート部材等。
チップ類:バイオチップ、μ-TAS(Micro-Total Analysis Systems)用のチップ、マイクロリアクターチップ等。
その他:記録メディア、ディスプレイ材料、触媒の担持体、フィルター、センサー部材、ナノインプリント用のドーターモールド等。
例1は実施例であり、例2は比較例である。
TiO2含有石英ガラス中のTiO2濃度は、蛍光X線分析法において、ファンダメンタルパラメーター(FP)法を用いて測定する。
2枚の石英系ガラス基材を、ヘリウムガス(100体積%)雰囲気であるチャンバー内に設置する。一方の石英系ガラス基材の表面に光硬化性組成物を配置する。他方の石英系ガラス基材を光硬化性組成物に押しつける。光硬化性組成物とこれを挟持する石英系ガラス基板との間に存在する大きさ50μm程度の気泡を観察し、光硬化性組成物の挟持完了から気泡の消失までの時間を測定する。
モールドの反転構造における凹部の底面について、原子間力顕微鏡を用いてJIS B0601(2001年)に規定される算術平均粗さRaを測定する。
モールドおよびシリコンウエハを、ヘリウムガス(100体積%)雰囲気であるチャンバー内に設置する。シリコンウエハの表面に光硬化性組成物を配置する。モールドを、モールドの反転構造が光硬化性組成物に接するように光硬化性組成物に押しつける。光硬化性組成物に、高圧水銀灯からの紫外線を15秒間照射し、光硬化性組成物を硬化させ、硬化物からモールドを分離することにより、複数の凸部からなる微細凹凸構造が表面に形成された硬化物をシリコンウエハの表面に有する物品を得る。これを複数回繰り返す。
撹拌機および冷却管を装着した1000mLの4つ口フラスコに、
ジペンタエリスリトールヘキサアクリレート(新中村化学工業社製、NK エステル A-DPH)の60g、
ネオペンチルグリコールジアクリレート(新中村化学工業社製、NK エステル A-NPG)の40g、
光重合開始剤(チバスペシャリティーケミカルズ社製、IRGACURE907)の4.0g、
含フッ素界面活性剤(旭硝子社製、フルオロアクリレート(CH2=CHCOO(CH2)2(CF2)8F)とブチルアクリレートとのコオリゴマー、フッ素含有量:約30質量%、質量平均分子量:約3000)の0.1g、
重合禁止剤(和光純薬社製、Q1301)の1.0g、および
シクロヘキサノンの65.0gを入れる。
(工程(a))
ガラス形成原料であるTiCl4およびSiCl4を、それぞれガス化させた後に混合し、酸水素火炎中で加熱加水分解(火炎加水分解)させることで得られるTiO2-SiO2ガラス微粒子を堆積用基材に堆積、成長させて、多孔質TiO2-SiO2ガラス体を形成する。
得られた多孔質TiO2-SiO2ガラス体はそのままではハンドリングしにくいため、堆積用基材に堆積させたままの状態で、大気中、1200℃で4時間保持した後、堆積用基材から外す。
その後、多孔質TiO2-SiO2ガラス体を、ロータリーポンプと油拡散ポンプを用いて窒素ガスを主成分とする雰囲気の減圧下とし、1400℃で4時間保持して、TiO2-SiO2緻密体を得る。
得られたTiO2-SiO2緻密体を、カーボン型に入れて大気圧アルゴン雰囲気下にて1680℃で4時間保持することによって透明TiO2-SiO2ガラス体を得る。
得られた透明TiO2-SiO2ガラス体を、カーボン型に入れて大気圧アルゴン雰囲気下にて1700℃で4時間保持することによって成形を行い、成形TiO2-SiO2ガラス体を得る。
得られた成形TiO2-SiO2ガラス体を、内周刃スライサを用いて縦約153.0mm×横約153.0mm×厚さ約6.75mmの板状に切断し、面取りを行って、縦約153.0mm×横約153.0mm×厚さ約6.7mmの板材を得る。20B両面ラップ機(スピードファム社製)を用い、実質的にAl2O3からなる研磨材(平成サンケイ製、AZ#1000)を濾過水に18~20質量%懸濁させたスラリーによって、厚さが約6.5mmになるまで板材の主表面(転写パターンを形成する面)を研削加工する。
さらに、第2研磨工程として、24B両面ポリシュ機を用い、スウェード系研磨パッド、および酸化セリウムを主成分とする研磨材によって、板材の主表面を約15μm研磨する。
さらに、別の研磨機で第3研磨工程を行い、TiO2-SiO2ガラス基材を得る。この第3研磨工程には、スウェード系研磨パッド、およびコロイダルシリカを用いる。
得られたモールドについて、凹部の底面の算術平均粗さRaを測定する。平均値は14nmである。
(工程(a))
ガラス形成原料であるSiCl4をガス化させ、酸水素火炎中で加熱加水分解(火炎加水分解)させることで得られるSiO2ガラス微粒子を堆積用基材に堆積、成長させて、多孔質SiO2ガラス体を形成する。
得られた多孔質SiO2ガラス体はそのままではハンドリングしにくいため、堆積用基材に堆積させたままの状態で、大気中、1200℃で4時間保持した後、堆積用基材から外す。
その後、多孔質SiO2ガラス体を、ロータリーポンプと油拡散ポンプを用いて窒素ガスを主成分とする雰囲気の減圧下とし、1450℃で4時間保持して、透明SiO2ガラス体を得る。
得られた透明SiO2ガラス体を、カーボン型に入れて大気圧アルゴン雰囲気下にて1750℃で4時間保持することによって成形を行い、成形SiO2ガラス体を得る。
得られた成形SiO2ガラス体について、例1と同じ方法で、研削、研磨を行い、SiO2ガラス基材を得る。
得られたモールドについて、凹部の底面の算術平均粗さRaを測定する。平均値は9nmである。
本出願は、2010年2月3日出願の、日本特許出願2010-022235に基づくものであり、その内容はここに参照として取り込まれる。
12 凹部(反転構造)
20 光硬化性組成物
30 基材
40 物品
42 硬化物
44 凸部(微細凹凸構造)
Claims (4)
- 微細凹凸構造を表面に有する物品を製造する方法であって、
下記工程(i)~(iii)を有し、
下記モールドが、TiO2含有石英ガラスを含むものであり、
少なくとも下記工程(i)を、ヘリウムガス雰囲気下で行う、微細凹凸構造を表面に有する物品の製造方法;
(i)光硬化性組成物を、微細凹凸構造の反転構造を表面に有するモールドの該反転構造を有する表面に接触するように、該モールドと基材とで挟持する工程;
(ii)モールドと基材とで光硬化性組成物を挟持した状態で、光硬化性組成物に光を照射し、光硬化性組成物を硬化させて硬化物とする工程;
(iii)硬化物からモールドを分離して、微細凹凸構造が表面に形成された硬化物を基材の表面に有する物品を得る工程。 - 該モールドにおいて、反転構造における凹部の底面の算術平均粗さRaが1~30nmである、請求項1に記載の微細凹凸構造を表面に有する物品の製造方法。
- 該モールドが、TiO2濃度が2~10質量%のTiO2含有石英ガラスを含むものである、請求項1または2に記載の微細凹凸構造を表面に有する物品の製造方法。
- ヘリウムガス雰囲気がヘリウムガスの濃度が50体積%以上の雰囲気である、請求項1~3のいずれか一項に記載の微細凹凸構造を表面に有する物品の製造方法。
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EP11739716.6A EP2532508A4 (en) | 2010-02-03 | 2011-01-31 | METHOD FOR PRODUCING AN ARTICLE WITH A FINISHED SURFACE STRUCTURE |
JP2011552768A JP5806121B2 (ja) | 2010-02-03 | 2011-01-31 | 微細凹凸構造を表面に有する物品の製造方法 |
US13/565,298 US20120292793A1 (en) | 2010-02-03 | 2012-08-02 | Process for producing article having fine concave and convex structure on surface |
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US (1) | US20120292793A1 (ja) |
EP (1) | EP2532508A4 (ja) |
JP (1) | JP5806121B2 (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2684851A2 (en) | 2012-07-10 | 2014-01-15 | Shin-Etsu Chemical Co., Ltd. | Synthetic quartz glass for forming nanoimprint molds and method of making the glass by flame hydrolysis |
JP2021075738A (ja) * | 2019-11-05 | 2021-05-20 | ニチコン株式会社 | アルミニウム箔の表面加工方法 |
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CN108242402B (zh) * | 2016-12-26 | 2020-10-30 | 无锡华润华晶微电子有限公司 | 清模夹具及清模*** |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6696220B2 (en) | 2000-10-12 | 2004-02-24 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro-and nano-imprint lithography |
JP2004071934A (ja) | 2002-08-08 | 2004-03-04 | Kanegafuchi Chem Ind Co Ltd | 微細パターンの製造方法および転写材料 |
JP2006306674A (ja) * | 2005-04-28 | 2006-11-09 | Shinetsu Quartz Prod Co Ltd | ナノインプリントスタンパー用シリカ・チタニアガラス |
JP2008303100A (ja) * | 2007-06-06 | 2008-12-18 | Shin Etsu Chem Co Ltd | ナノインプリントモールド用チタニアドープ石英ガラス |
WO2009034954A1 (ja) * | 2007-09-13 | 2009-03-19 | Asahi Glass Co., Ltd. | TiO2含有石英ガラス基板 |
WO2009067241A1 (en) * | 2007-11-21 | 2009-05-28 | Molecular Imprints, Inc. | Porous template and imprinting stack for nano-imprint lithography |
WO2010047821A1 (en) * | 2008-10-23 | 2010-04-29 | Molecular Imprints, Inc. | Fabrication of high-throughput nano-imprint lithography templates |
JP2010149482A (ja) * | 2008-12-26 | 2010-07-08 | Toshiba Corp | インプリント用モールドおよびパターン形成方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8721952B2 (en) * | 2004-11-16 | 2014-05-13 | International Business Machines Corporation | Pneumatic method and apparatus for nano imprint lithography having a conforming mask |
JP4487783B2 (ja) * | 2005-01-25 | 2010-06-23 | 旭硝子株式会社 | TiO2を含有するシリカガラスの製造方法およびTiO2を含有するシリカガラスを用いたEUVリソグラフィ用光学部材 |
JP2009013048A (ja) * | 2007-06-06 | 2009-01-22 | Shin Etsu Chem Co Ltd | ナノインプリントモールド用チタニアドープ石英ガラス |
JP5121549B2 (ja) * | 2008-04-21 | 2013-01-16 | 株式会社東芝 | ナノインプリント方法 |
US8470188B2 (en) * | 2008-10-02 | 2013-06-25 | Molecular Imprints, Inc. | Nano-imprint lithography templates |
US20100109201A1 (en) * | 2008-10-31 | 2010-05-06 | Molecular Imprints, Inc. | Nano-Imprint Lithography Template with Ordered Pore Structure |
WO2010063504A2 (en) * | 2008-12-04 | 2010-06-10 | Asml Netherlands B.V. | Imprint lithography apparatus and method |
EP2508492A4 (en) * | 2009-12-04 | 2014-07-30 | Asahi Glass Co Ltd | PROCESS FOR PRODUCING SILICA-BASED GLASS SUBSTRATE FOR PRINTING MOLD, AND METHOD FOR PRODUCING PRINTING MOLD |
TW201144091A (en) * | 2010-01-29 | 2011-12-16 | Molecular Imprints Inc | Ultra-compliant nanoimprint lithography templates |
CN102985379A (zh) * | 2010-07-08 | 2013-03-20 | 旭硝子株式会社 | 含有TiO2的石英玻璃基材及其制造方法 |
JP5772827B2 (ja) * | 2010-07-12 | 2015-09-02 | 旭硝子株式会社 | インプリントモールド用TiO2含有石英ガラス基材およびその製造方法 |
JP5935765B2 (ja) * | 2012-07-10 | 2016-06-15 | 信越化学工業株式会社 | ナノインプリントモールド用合成石英ガラス、その製造方法、及びナノインプリント用モールド |
-
2011
- 2011-01-31 KR KR1020127020248A patent/KR20120113248A/ko not_active Application Discontinuation
- 2011-01-31 WO PCT/JP2011/051946 patent/WO2011096368A1/ja active Application Filing
- 2011-01-31 EP EP11739716.6A patent/EP2532508A4/en not_active Withdrawn
- 2011-01-31 JP JP2011552768A patent/JP5806121B2/ja active Active
- 2011-02-01 TW TW100104037A patent/TW201144025A/zh unknown
-
2012
- 2012-08-02 US US13/565,298 patent/US20120292793A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6696220B2 (en) | 2000-10-12 | 2004-02-24 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro-and nano-imprint lithography |
JP2004071934A (ja) | 2002-08-08 | 2004-03-04 | Kanegafuchi Chem Ind Co Ltd | 微細パターンの製造方法および転写材料 |
JP2006306674A (ja) * | 2005-04-28 | 2006-11-09 | Shinetsu Quartz Prod Co Ltd | ナノインプリントスタンパー用シリカ・チタニアガラス |
JP2008303100A (ja) * | 2007-06-06 | 2008-12-18 | Shin Etsu Chem Co Ltd | ナノインプリントモールド用チタニアドープ石英ガラス |
WO2009034954A1 (ja) * | 2007-09-13 | 2009-03-19 | Asahi Glass Co., Ltd. | TiO2含有石英ガラス基板 |
WO2009067241A1 (en) * | 2007-11-21 | 2009-05-28 | Molecular Imprints, Inc. | Porous template and imprinting stack for nano-imprint lithography |
WO2010047821A1 (en) * | 2008-10-23 | 2010-04-29 | Molecular Imprints, Inc. | Fabrication of high-throughput nano-imprint lithography templates |
JP2010149482A (ja) * | 2008-12-26 | 2010-07-08 | Toshiba Corp | インプリント用モールドおよびパターン形成方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2532508A4 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2684851A2 (en) | 2012-07-10 | 2014-01-15 | Shin-Etsu Chemical Co., Ltd. | Synthetic quartz glass for forming nanoimprint molds and method of making the glass by flame hydrolysis |
KR20140007761A (ko) | 2012-07-10 | 2014-01-20 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 나노임프린트 몰드용 합성 석영 유리 및 그의 제조 방법 |
US9056785B2 (en) | 2012-07-10 | 2015-06-16 | Shin-Etsu Chemical Co., Ltd. | Nanoimprint mold-forming synthetic quartz glass and making method |
JP2021075738A (ja) * | 2019-11-05 | 2021-05-20 | ニチコン株式会社 | アルミニウム箔の表面加工方法 |
JP7432887B2 (ja) | 2019-11-05 | 2024-02-19 | ニチコン株式会社 | アルミニウム箔の表面加工方法 |
Also Published As
Publication number | Publication date |
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US20120292793A1 (en) | 2012-11-22 |
EP2532508A1 (en) | 2012-12-12 |
EP2532508A4 (en) | 2014-01-08 |
KR20120113248A (ko) | 2012-10-12 |
TW201144025A (en) | 2011-12-16 |
JPWO2011096368A1 (ja) | 2013-06-10 |
JP5806121B2 (ja) | 2015-11-10 |
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