WO2011092601A2 - Nanostructures bio-inspirées pour mettre en œuvre des jonctions pn verticales - Google Patents

Nanostructures bio-inspirées pour mettre en œuvre des jonctions pn verticales Download PDF

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WO2011092601A2
WO2011092601A2 PCT/IB2011/000432 IB2011000432W WO2011092601A2 WO 2011092601 A2 WO2011092601 A2 WO 2011092601A2 IB 2011000432 W IB2011000432 W IB 2011000432W WO 2011092601 A2 WO2011092601 A2 WO 2011092601A2
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doped structure
substrate
doped
contact
doping type
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WO2011092601A3 (fr
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Faycal Saffih
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King Abdullah University Of Science And Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type

Definitions

  • This invention relates to pn-junction devices and more particularly relates to bio-inspired photosensors nanostructures for implementing pn-junctions. Particular embodiments in photodetection and energy harvesting are presented.
  • Typical image sensing devices are planar, formed on the surface of a substrate.
  • a typical image sensor may include embedded p-type doped regions and n-type doped regions embedded in a surface of a silicon substrate.
  • active area the surface area available for an incoming photon to strike
  • short depletion region it passes through where the generated photo-charges will be collected.
  • the capability of each sensor to detect photons is reduced, because the active area for collecting the photon is reduced.
  • AVD Avalanche Photodiodes
  • the described embodiment includes a substrate, a first doped structure, and a second doped structure.
  • the first doped structure has a first doping type.
  • the first doped structure may be formed above the substrate and extend outwardly from an upper surface of the substrate.
  • the second doped structure has a second doping type.
  • the second doped structure may be formed above the substrate and in contact with the first doped structure. Additionally, the second doped structure may extend outwardly from the upper surface of the substrate.
  • the apparatus includes a first diffused layer formed between the substrate and the first doped structure, the first diffused layer having a third doping type. Additionally, the apparatus may include a second diffused layer formed between the substrate and the second doped structure, the second diffused layer having a fourth doping type. Also, the apparatus may include a first contact formed between the substrate and the first doped structure, and a second contact formed between the substrate and the second doped structure. In one embodiment, the first contact and the second contact comprise metal.
  • the apparatus may include a first contact formed between the substrate and the first diffused layer; and a second contact formed between the substrate and the second diffused layer.
  • the first doped structure includes a rod-like structure.
  • the second doped structure maybe deposited over a surface of the first doped structure.
  • the first doped structure may have a substantially circular cross section.
  • the first doped structure may have a substantially square cross section.
  • the second doped structure is substantially conical.
  • the first doping type may be an n- typed doping
  • the second doping type may be a p-type doping
  • the third doping type may be an n + -typed doping
  • the fourth doping type may be an p + -type doping.
  • the apparatus may include a plurality of annular diffusion structures disposed within the second doped structure, but separated from each other by an insulator, the annular diffusion structures having the fourth doping type.
  • the apparatus may also include a plurality of contacts, each contact coupled to one of the plurality of annular diffusion structures.
  • the substrate may be flexible. In a particular embodiment, the substrate may be curved. In certain embodiments, the apparatus may also include an insulator layer formed between the substrate and the first and second doped structures.
  • the apparatus may include a transparent passivation layer formed above the substrate.
  • the transparent passivation layer may include silicon glass.
  • the apparatus may include an interconnection layer, the first doped structure and the second doped structure being formed above the interconnection layer according to a hybrid process.
  • the first doped structure and the second doped structure may be formed within the interconnection layer according to a monolithic process.
  • the apparatus may include structures formed both above and below the interconnection layer according to both hybrid and monolithic processes respectively. For example, such an apparatus may be configured to simultaneously harvest energy for operation of circuitry embedded in the monolithic design to sense photo signals or not.
  • the apparatus may include one or more contact pads in electrical communication with the first doped structure and the second doped structure, the contact pads communicating signals from the first doped structure and the second doped structure to an external device.
  • the system may include a substrate and a pn-junction structure.
  • the pn-junction structure may include a first doped structure having a first doping type, the first doped structure formed above the substrate and extending outwardly from an upper surface of the substrate.
  • the pn-junction structure may include a second doped structure having a second doping type, the second doped structure formed above the substrate and in contact with the first doped structure, the second doped structure extending outwardly from the upper surface of the substrate.
  • the system may include a Readout Integrated Circuit (ROIC) coupled to the pn-junction structure, the ROIC configured to receive signals from the pn-junction structure.
  • ROIC Readout Integrated Circuit
  • One embodiment of the system may also include an Alternating Current (“AC") to Direct Current (“DC”) converter circuit coupled to the ROIC.
  • AC Alternating Current
  • DC Direct Current
  • the system may also include an energy storage device coupled to the ROIC.
  • the system may include one or more contact pads coupled to the ROIC, the contact pads configured to communicate signals from the ROIC to an external device.
  • the wide-angle photodetector may include a curved substrate and a plurality of photodetectors disposed above the surface of the curved substrate.
  • the photodetectors may include a first doped structure having a first doping type, the first doped structure formed above the substrate and extending outwardly from an upper surface of the substrate, and a second doped structure having a second doping type, the second doped structure formed above the substrate and in contact with the first doped structure, the second doped structure extending outwardly from the upper surface of the substrate.
  • the wide-angle photodetector may include a Readout Integrated Circuit (ROIC) coupled to the plurality of photodetectors.
  • ROIC Readout Integrated Circuit
  • the curved substrate is convex and can be concave in which case it can be supported by optical mirror, all of these to realize a wide view image sensor system.
  • the opto- fluidic microscope detector includes an annular substrate having an interior surface and an exterior surface, and a plurality of a plurality of photodetectors disposed within the interior portion of the annular substrate.
  • the photodetectors include a first doped structure having a first doping type, the first doped structure formed above the interior surface of the substrate and extending inwardly from the interior surface of the substrate, and a second doped structure having a second doping type, the second doped structure formed above the interior surface of the substrate and in contact with the first doped structure, the second doped structure extending inwardly from the interior surface of the substrate.
  • the opto-fluidic microscope detector may include a Readout Integrated Circuit (ROIC) coupled to the plurality of 3D photodetectors.
  • ROIC Readout Integrated Circuit
  • the method may include providing a substrate, forming a first doped structure, having a first doping type, above the substrate and extending outwardly from an upper surface of the substrate, and forming a second doped structure, having a second doping type, above the substrate and in contact with the first doped structure, the second doped structure extending outwardly from the upper surface of the substrate.
  • the method may also include forming a first diffused layer formed between the substrate and the first doped structure, the first diffused layer having a third doping type, and forming a second diffused layer formed between the substrate and the second doped structure, the second diffused layer having a fourth doping type. Also, the method may include forming a first contact between the substrate and the first doped structure, and forming a second contact between the substrate and the second doped structure. In a particular embodiment, the first contact and the second contact comprise metal.
  • the method includes forming a first contact between the substrate and the first diffused layer, and forming a second contact between the substrate and the second diffused layer.
  • the first doped structure is a rod-like structure.
  • the method may include depositing the second doped structure over a surface of the first doped structure.
  • the first doped structure may have a substantially circular cross section.
  • the first doped structure may have a substantially square cross section.
  • the second doped structure may be substantially conical.
  • the first doping type comprises an n-typed doping
  • the second doping type comprises a p-type doping
  • the third doping type may include a n + -typed doping
  • the fourth doping type may include an p + -type doping.
  • the method may include forming a plurality of annular diffusion structures disposed within the second doped structure but all annular diffusion structures separated from each other by an insulator.
  • the annular diffusion structures may have the fourth doping type.
  • the method may include forming a plurality of contacts. Each contact may be coupled to one of the plurality of annular diffusion structures.
  • the substrate may be flexible. In a further embodiment, the substrate may be curved. In still a further embodiment, the method may include forming an insulator layer between the substrate and the first and second doped structures.
  • the method may include forming a transparent passivation layer above the substrate.
  • the transparent passivation layer may include silicon glass.
  • the method may include forming the first doped structure and the second doped structure above an interconnection layer according to a hybrid process.
  • the method may include forming the first doped structure and the second doped structure within an interconnection layer according to a monolithic process.
  • the method may also include forming one or more contact pads in electrical communication with the first doped structure and the second doped structure, the contact pads communicating signals from the first doped structure and the second doped structure to an external device.
  • the present embodiments may further describe the photosensitivity analysis and show how the geometry of the photodiode impacts it. Additionally, a semi-empirical analysis of the NPR based photodiode sensitivity and responsivity will be presented. The resulting dependence of the NPR photo-detection sensitivity on its height is proven and supporting examples from biological photocells are discussed. Also, some simulation results which have been carried out using Sentaurus tools from Synopsys are discussed.
  • Coupled is defined as connected, although not necessarily directly, and not necessarily mechanically.
  • substantially and its variations are defined as being largely but not necessarily wholly what is specified as understood by one of ordinary skill in the art, and in one non-limiting embodiment "substantially” refers to ranges within 10%, preferably within 5%, more preferably within 1%, and most preferably within 0.5% of what is specified.
  • a step of a method or an element of a device that "comprises,” “has,” “includes” or “contains” one or more features possesses those one or more features, but is not limited to possessing only those one or more features.
  • a device or structure that is configured in a certain way is configured in at least that way, but may also be configured in ways that are not listed.
  • FIG. 1A is a perspective view diagram illustrating one embodiment of a pn-junction structure.
  • FIG. 1 B is a cross-section diagram illustrating one embodiment of a pn-junction structure.
  • FIG. 1 C is a bottom view diagram illustrating one embodiment of a pn-junction structure.
  • FIG. 2A is a perspective view diagram illustrating another embodiment of a pn-junction structure.
  • FIG. 2B is a bottom view diagram illustrating the pn-junction structure of FIG. 2A.
  • FIG. 3 A is a perspective view diagram illustrating one embodiment of a color sensing pn- junction structure.
  • FIG. 3B is a lateral cross-section view diagram illustrating the color sensing pn-junction structure of FIG. 3 A.
  • FIG. 3C is a lateral cross-section view diagram illustrating one embodiment of a color sensing pn-junction structure.
  • FIG. 4A is a perspective view diagram illustrating another embodiment of a pn-junction structure.
  • FIG. 4B is a front view diagram illustrating another embodiment of a pn-junction structure.
  • FIG. 4C is a front view cross-section diagram illustrating one embodiment of a color sensing pn-junction structure.
  • FIG. 4D is a front view cross-section diagram illustrating another embodiment of a color sensing pn-junction structure having multiple cathode contacts.
  • FIG. 5A is a lateral cross-section diagram illustrating one embodiment of a system having a pn-junction structure formed according to a monolithic process.
  • FIG. 5B is a lateral cross-section diagram illustrating another embodiment of a system having a pn-junction structure formed according to a hybrid process.
  • FIG. 6 is a lateral cross-section diagram illustrating another embodiment of a system having a pn-junction structure having a portion formed according to a monolithic process and a portion formed according to a hybrid process.
  • FIG. 7 is a lateral cross-section diagram illustrating one embodiment of a wide-angle photodetector.
  • FIG. 8 is a lateral cross-section diagram illustrating one embodiment of a system having an insulator layer.
  • FIG. 9A is a lateral cross-section diagram illustrating one embodiment of an opto-fluidic microscope detector.
  • FIG. 9B is a perspective view diagram illustrating the opto-fluidic microscope detector of FIG. 9A.
  • FIG. 10 is a schematic flowchart diagram illustrating one embodiment of a method for manufacturing a pn-junction structure according to the present embodiments.
  • FIG. 11 A is a front cross-section view diagram illustrating one embodiment of a color sensing pn-junction structure having contacts arranged along a single plane.
  • FIG. 1 IB is a front cross-section view diagram illustrating one embodiment of a color sensing pn-junction structure having contacts arranged along a single plane, and having a first doped structure comprising multiple substructures, each with its own contact formed along the plane.
  • FIG. 12 is a schematic of the NPR test implementation and shows an SEM picture of the fabricated NPR photodiode to be soon tested.
  • FIG. 13 is the responsivity of NPR photodiode versus its height.
  • FIG. 14 is the SEM of a fabricated NPR using liftoff and deep ICPRIE.
  • the present embodiments may revolutionize semiconductor electronic imaging technology by providing three-dimensional pn-junction structures.
  • PN-junction structures are the building blocks of several types of semiconductor sensor devices, particularly in the fields of optics and photonics.
  • the present embodiments describe a variety of rod-like nanostructures which maybe implemented in a variety of, e.g., sensing and energy harvesting applications.
  • FIGs. 1A-1C illustrate one embodiment of an apparatus 100 that includes a three- dimensional (3D) pn-junction.
  • the described embodiment includes a first doped structure 102, and a second doped structure 104.
  • the apparatus 100 may include a substrate 502.
  • the first doped structure 102 has a first doping type.
  • the first doped structure 102 may be formed above the substrate 502 and extend outwardly from an upper surface of the substrate 502.
  • the second doped structure 104 has a second doping type.
  • the second doped structure 104 may be formed above the substrate 502 and in contact with the first doped structure 102. Additionally, the second doped structure 104 may extend outwardly from the upper surface of the substrate 502.
  • the substrate 502 is a silicon substrate. Those of skill in the art will appreciate that other suitable substrates 502, such as quartz or graphene and the like, may be substituted for silicon.
  • the first doped structure 102 maybe grown or deposited above the substrate 502. In a particular embodiment, the first doped structure 102 may be grown or deposited directly on an upper surface of the substrate 502. Alternatively, one or more intermediary layers may be formed between the first doped structure 102 and the second doped structure. Various techniques may be used to grow or deposit the first doped structure 102, including, but not limited to Vapor Liquid Solid (VLS) techniques known in the art.
  • the second doped structure 104 may be formed on the first doped structure 102 using, for example, Chemical Vapor Deposition (CVD), Atomic Layer Deposition (ALD) or the like.
  • the apparatus 100 includes a first diffused layer 108 formed between the substrate 502 and the first doped structure 102, the first diffused layer 108 having a third doping type. Additionally, the apparatus 100 may include a second diffused layer 106 formed between the substrate 502 and the second doped structure 104, the second diffused layer 106 having a fourth doping type. Also, the apparatus 100 may include a first contact 1 12 formed between the substrate 502 and the first doped structure 102, and a second contact 110 formed between the substrate 502 and the second doped structure 104. In one embodiment, the first contact 112 and the second contact 1 10 comprise metal.
  • the first diffused layer 108 and the second diffused layer 106 may be formed using an ion implantation or bombardment technique.
  • a layer of p-type material may be deposited.
  • the layer of p-type material may be bombarded with p + ions to form the first diffused second diffused layer 106.
  • the apparatus 100 may include a first contact 112 formed between the substrate 502 and the first diffused layer 108; and a second contact 1 10 formed between the substrate 502 and the second diffused layer 106.
  • the first contact 1 12 and the second contact 110 may be formed using, e.g., a metal sputtering technique. Alternatively electroplating, or other techniques may be used.
  • the first doped structure 102 includes a rod-like structure.
  • the second doped structure 104 may be deposited over a surface of the first doped structure 102.
  • the first doped structure 102 may have a substantially circular cross section as shown in FIGs. 2A-2B.
  • the first doped structure 102 may have a substantially square cross section as shown in FIGs 1 A-1C.
  • the second doped structure 104 is substantially conical as shown in FIGs 4A-4B. Indeed, one of skill in the art will recognize that the second doped structure 104 may have other geometric shapes, depending upon fabrication constraints or performance.
  • the second doped structure 104 may have a rectangular cross-section, an oval cross-section, or the like.
  • the first doping type may be an n-type doping
  • the second doping type may be a p-type doping
  • the third doping type may be an n + -typed doping
  • the fourth doping type may be an p + -type doping.
  • another embodiment of the apparatus 300 may include a plurality of annular diffusion structures 302 disposed within the second doped structure 104 and separated by an insulating material 310 between each annular diffusion structure.
  • the annular diffusion structures 302 may be disposed between a plurality of segments of the second doped structure 104 and/or insulating layers 310.
  • the annular diffusion structures 302 may have the fourth doping type.
  • the annular diffusion structures 302 are p + -type doped.
  • the apparatus 100 may also include a plurality of contacts 304 -308. Each contact 304-308 may be coupled to one of the plurality of annular diffusion structures 302.
  • the each contact 304-308 pay provide a signal corresponding to a color of detected light.
  • the first contact 304 may be configured to provide a signal corresponding to a level of blue- frequency light detected by the apparatus 300.
  • the second contact 306 and the third contact 308 may provide signals corresponding to green- frequency light levels and red-frequency light levels respectively.
  • the apparatus 300 described in FIGs. 3 A-3B maybe enhanced using chromatic Nano-Photo-Rod technology to improve color sensing resolution.
  • the cathode voltage sharing between three reverse-biased color photodiodes may become an issue. In such situation, only a single annular structure may be used at one time, but at the corresponding color height.
  • the apparatus 300 may comprise three Chromatic Nano-Photo-Rods (CNPRs) per chromatic pixel.
  • CNPRs Chromatic Nano-Photo-Rods
  • the first doped structure 102 may include a plurality of doped substructures 312-316 as illustrated in FIG. 3 C.
  • the plurality of doped substructures 312-316 may be separated by an insulator layer 310.
  • the plurality of doped substructures 312-316 may comprise three co-centric substructures 312-316, each insulated from the others.
  • each of the co-centric substructures 312-316 may extend as high as their anode contacts respectively.
  • These co-centric substructures 312-316 may comprise cathodes.
  • the co-centric substructures 312-316 may not share the same voltage potential at their bases.
  • the contact 1 12 may be replaced with a plurality of contact structures 112 as illustrated.
  • the contact structures 1 12 may be electrically isolated from each other.
  • the problem of voltage sharing between the three reverse-biased color photodiodes may be resolved by using only one color cone at a time corresponding to the color height.
  • three CNPCs per chromatic pixel is achievable.
  • the second doped structure 104 may include a plurality of substructures 402, 406, 408.
  • each of the substructures 402, 406, and 408 may be separated by an insulator layer 404, 408, respectively.
  • each of the plurality of substructures 402, 406, 408 may be coupled to a separate contact 412-416 respectively. This embodiment may further enhance color sensing resolution.
  • one embodiment may use only one color cone at a time at the corresponding color height. Such an embodiment may yield three chromatic CNPCs per chromatic pixel.
  • three co-centric (insulated from each other) cathode may be used as high as their anode conic contacts. These co-centric cathodes will not share the same voltage potential at their bases. This embodiment is illustrated in FIG. 4D.
  • FIGs. 1 1A-1 1B illustrate an alternative embodiment of a color sensing PN-junction structure.
  • the contacts may be formed along a single plane.
  • the contacts may be formed over a substrate in a plane that is parallel to a surface of the substrate 502.
  • the apparatus 100 may include a transparent passivation layer 552 formed above the substrate 502.
  • the transparent passivation layer 552 may include silicon glass.
  • the apparatus 100 may include an interconnection layer 506, the first doped structure 102 and the second doped structure 104 being formed above the interconnection layer 506 according to a hybrid process.
  • the first doped structure 102 and the second doped structure 104 may be formed within the interconnection layer 506 according to a monolithic process.
  • the advantages of a monolithic process may include ( 1 ) fewer extra-processing steps, (2) the device may be integrated within standard CMOS processes, (3) less optical-cross talk may result, (4) no need for micro-lens due to large active areas, (5) the surrounding metal interconnection can be used as "focusing" devices similar to micro-lenses used in CMOS imagers, and (6) zero-cross pixel cross-talk both electrically and optically.
  • the disadvantages of monolithic processes include (1) the process may be limited to deep trench etching design rules, (2) parasitic capacitance from the surrounding metal routing interconnections may need to put metal routing clearance around the NPR structure, and (3) depending on fabrication limitations, NPR length may be limited to a certain range.
  • the advantages of the hybrid process include ( 1 ) a variety of nano fabrication techniques can be used to manufacture the required NPR structure, and (2) higher photo-collection. These advantages make hybrid processes good for manufacturing energy harvesting devices.
  • the disadvantages of the hybrid approach include (1 ) The semiconductor material used to build the NPR may not be epitaxial leading to amorphous structure the cause of large dark currents and noise, (2) large RC delay and large parasitic capacitance may limit the NPR photo-sensitivity, and (3) due to top-metal layer requirements NPR distribution density might be reduced.
  • the apparatus 100 may include structures formed both above and below the interconnection layer 506 according to both hybrid and monolithic processes respectively.
  • the embodiment of FIG. 6 is useful in biomedical and spatial imaging where extended-imaging-time and very-limited-power supply requirements are needed.
  • the apparatus of FIG. 6 may have multiple simultaneous uses because of the dual use of the smart-NPR structure.
  • such an apparatus 100 may be configured to simultaneously harvest energy for operation of circuitry and sense photo signals.
  • the apparatus 100 may include one or more contact pads 508 in electrical communication with the first doped structure 102 and the second doped structure 104, the contact pads 508 communicating signals from the first doped structure 102 and the second doped structure 104 to an external device.
  • the substrate 502, 702 may be flexible. Also, as illustrated in FIG. 7, the substrate 702 maybe curved. As illustrated in FIG. 8, another embodiment of the apparatus 800, may also include an insulator layer 802 formed between the substrate 502 and the first and second doped structures 104. In one embodiment, the insulator layer 802 may include a buried oxide layer used in Silicon-On-Insulator CMOS chips. Such an embodiment maybe used in harsh environments, for example in spacecraft applications.
  • FIG. 5 A illustrates one embodiment of a system 500.
  • the system may include a substrate 502 and a pn-junction structure 510.
  • the pn-junction structure 510 may include a first doped structure 102 having a first doping type, the first doped structure 102 formed above the substrate 502 and extending outwardly from an upper surface of the substrate 502. Additionally, the pn-junction structure 510 may include a second doped structure 104 having a second doping type, the second doped structure 104 formed above the substrate 502 and in contact with the first doped structure 102, the second doped structure 104 extending outwardly from the upper surface of the substrate 502.
  • the pn-junction structure 510 may comprise a photodetector.
  • the system 500 may include a Readout Integrated Circuit (ROIC) 504 coupled to the pn-junction structure 510, the ROIC 504 configured to receive signals from the pn- j unction structure 510.
  • ROIC Readout Integrated Circuit
  • FIG. 6 illustrates another embodiment of a system 600.
  • the system 600 include an Alternating Current to Direct Current (“AC/DC") converter circuit 606 coupled to the ROIC 504.
  • AC/DC Alternating Current to Direct Current
  • the system may also include an energy storage device 608 coupled to the ROIC 504.
  • the system 600 may include one or more contact pads 508 coupled to the ROIC 504, the contact pads 508 configured to communicate signals from the ROIC 504 to an external device (not shown).
  • FIG. 7 illustrates one embodiment of a wide-angle photodetector 510.
  • the wide-angle photodetector 510 may include a curved substrate 702 and a plurality of photodetectors 510 disposed above the surface of the curved substrate 702.
  • the photodetectors 510 may include a first doped structure 102 having a first doping type, the first doped structure 102 formed above the substrate 502 and extending outwardly from an upper surface of the substrate 502, and a second doped structure 104 having a second doping type, the second doped structure 104 formed above the substrate 502 and in contact with the first doped structure 102, the second doped structure 104 extending outwardly from the upper surface of the substrate 502.
  • the wide-angle photodetector 510 may include a Readout Integrated Circuit (ROIC) 504 coupled to the plurality of photodetectors 510.
  • the curved substrate 702 is convex, thus capturing photons 706 from a wide range of angels.
  • the apparatus 700 of FIG. 7 may include a transparent passivation layer 704 formed above the curved substrate 702.
  • FIGs. 9A-9B illustrate one embodiment of an opto-fluidic microscope detector 900.
  • the opto-fluidic microscope detector 900 includes an annular substrate 702 having an interior surface and an exterior surface, and a plurality of a plurality of photodetectors 510 disposed within the interior portion of the annular substrate 702.
  • the photodetectors 510 include a first doped structure 102 having a first doping type, the first doped structure 102 formed above the interior surface of the substrate 502 and extending inwardly from the interior surface of the substrate 502, and a second doped structure 104 having a second doping type, the second doped structure 104 formed above the interior surface of the substrate 502 and in contact with the first doped structure 102, the second doped structure 104 extending inwardly from the interior surface of the substrate 502.
  • the opto-fluidic microscope detector 900 may include a Readout Integrated Circuit (ROIC) 504 coupled to the plurality of 3D photodetectors 510.
  • ROIC Readout Integrated Circuit
  • the light is tangent to the micro-fiuidic flow and a nano- holes metal sheet may be used as a light uniforming medium to be reflected by the flowing microorganisms bodies.
  • a nano- holes metal sheet may be used as a light uniforming medium to be reflected by the flowing microorganisms bodies.
  • Such an embodiment provides a 3D microscopic imaging that will benefit lab-on- chip biomedicine tremendously.
  • Certain advantages of the embodiment in FIGs. 9A-9B include: (1) NPR high Low light sensitivity relaxes tangent light intensity requirement, (2) the NPR sensitivity geometry enables higher optical resolution and minimal cross talk, and (3) a fluorescent specimen may be used to have a 3D image of the object.
  • the described embodiments may be used in a variety of applications, including but not limited to, CMOS imaging sensors, photovoltaics, biomedical imaging, space imaging, and night vision imaging.
  • the present embodiments may be advantageous in photovoltaics because the solar energy harvesting efficiency of the photovoltaic devices may be improved by expanding the total surface area that is capable of collecting a photon and converting the photon into usable energy.
  • the rod-like pn-junction structure may dramatically increase the probability of electron-hole pair generation (photo-electric effect) over the semiconductor active area, because the total surface area available to receive the photon is increased.
  • FIG. 10 illustrates one embodiment of a method 1000 of forming a pn-junction structure 510.
  • the method 1000 may include providing 1002 a substrate 502, forming 1004 a first doped structure 102, having a first doping type, above the substrate 502 and extending outwardly from an upper surface of the substrate 502, and forming 1006 a second doped structure 104, having a second doping type, above the substrate 502 and in contact with the first doped structure 102, the second doped structure 104 extending outwardly from the upper surface of the substrate 502.
  • the method 1000 may also include forming a first diffused layer 108 formed between the substrate 502 and the first doped structure 102, the first diffused layer 108 having a third doping type, and forming 1006 a second diffused layer 106 formed between the substrate 502 and the second doped structure 104, the second diffused layer 106 having a fourth doping type. Also, the method 1000 may include forming a first contact 1 12 between the substrate 502 and the first doped structure 102, and forming a second contact 110 between the substrate 502 and the second doped structure 104. In a particular embodiment, the first contact 1 12 and the second contact 110 comprise metal.
  • the method 1000 includes forming a first contact 1 12 between the substrate 502 and the first diffused layer 108, and forming a second contact 110 between the substrate 502 and the second diffused layer 106.
  • a first contact 1 12 between the substrate 502 and the first diffused layer 108 may be used to manufacture a device for Silicon on Insulator (SOI) CMOS technology.
  • SOI Silicon on Insulator
  • the first doped structure 102 is a rod-like structure.
  • the method 1000 may include depositing the second doped structure 104 over a surface of the first doped structure 102.
  • the first doped structure 102 may have a substantially circular cross section.
  • the first doped structure 102 may have a substantially square cross section.
  • the second doped structure 104 may be substantially conical.
  • the first doping type comprises an n-typed doping
  • the second doping type comprises a p-type doping
  • the third doping type may include a n + -typed doping
  • the fourth doping type may include an p + -type doping.
  • the method 1000 may include forming a plurality of annular diffusion structures 302 disposed within the second doped structure 104.
  • the annular diffusion structures 302 may have the fourth doping type.
  • the method 1000 may include forming a plurality of contacts 304. Each contact may be coupled to one of the plurality of annular diffusion structures 302.
  • the substrate 502 may be flexible. In a further embodiment, the substrate 502 may be curved. In still a further embodiment, the method 1000 may include forming an insulator layer 802 between the substrate 502 and the first and second doped structures 104.
  • the method 1000 may include forming a transparent passivation layer 552 above the substrate 502.
  • the transparent passivation layer 552 may include silicon glass.
  • the method 1000 may include forming the first doped structure 102 and the second doped structure 104 above an interconnection layer 506 according to a hybrid process.
  • the method 1000 may include forming the first doped structure 102 and the second doped structure 104 within an interconnection layer 506 according to a monolithic process.
  • the method 1000 may also include forming one or more contact pads 508 in electrical communication with the first doped structure 102 and the second doped structure 104, the contact pads 508 communicating signals from the first doped structure 102 and the second doped structure 104 to an external device.
  • the present embodiments describe a nano-pho tonic rod (NPR) structure to replace the planar photodiode. It is a nano-photonic pillar of n-type (cathode) semiconductor covered by a p-type (anode) semiconductor as shown in FIGS. 1 A - 1C.
  • NPR nano-pho tonic rod
  • Embodiments of a NPR based pixel for electronic imaging may avoid the HRLL stringent requirements micro-lenses are used in the planar photodiodes to enhance the effective pixel fill factor especially, which becomes even harder with increasing resolution requirements.
  • NPR structures for example as illustrated in FIGs. 1 A- 1 C, may alleviate previous limitations of the art by eliminating the need for micro-lenses, thanks in part to its very high fill factor. Additionally, certain embodiments may boost the current imaging resolutions to higher levels, thus benefiting far more applications in biomedical imaging and communication systems.
  • One of the features characterizing active pixel sensors is their photosensitivity that relates two factors, the conversion gain (CG) and the quantum efficiency (QE) as derived from the following:
  • Vout QE x — x CG (13).
  • the sensitivity is the derivation of the output voltage with respect to light intensity and integration time. This derivation may be taken in the linear region of the photon transfer curve of the pixel and this derivation can be replaced by the variation. The result is the following equation:
  • the responsivity may be defined as:
  • the sensitivity can be derived from equations (14) and (15) as the following: n A gen j
  • the geometry of the 3T APS photodiode may influence its sensitivity through the responsivity R e , which depends on the depletion region width, besides other parameters. This width is the path length of the trajectory of the photon passing by the depletion region.
  • the anode maybe fully depleted by lowering its doping concentration, thus expanding the depletion region width to the whole anode thickness. Consequently, the photodiode areal capacitance may be reduced and its responsivity R e enhanced C .
  • the electron-hole pair EHP recombination in the depletion region maybe diminished. This effect may be due to the fact that as soon as EHP is created, electron and hole charges are separated by the junction internal electric field. Therefore, the number of collected charges increases, thus boosting the photodiode responsivity R e.
  • the enhancement in the previous factor may be further improved because the depletion region volume is higher, compared to a similar photodiode, thanks to its high aspect ratio.
  • the depletion region volume can be increased by widening the thickness of the anode, which in addition reduces the areal capacitance C as discussed in the first
  • the effect of diffused dark current from the silicon dead area that is absent from the NPR photodiode structure may be minimal.
  • a dark current can also be generated by the defects located in the depletion region. However, it is thought that their contribution may be minimal due to the built-in field.
  • C ⁇ and C 2 are empirical fitting parameters
  • L and L ⁇ ff are the maximum and diffusion lengths of the photo-generated carriers respectively
  • C A and Cp are respectively the photodiode areal and peripheral capacitances.
  • P and d are the photodiode perimeter and junction depth respectively
  • fiA is a function of the area accounting for the planar photodiode bottom area photo-charge contribution.
  • the second term of the numerator considers the peripheral diffusion current contribution (lateral and bottom contributions). Assuming a negligible NPR photodiode footprint area, i. e. NPRJbase, and a minimal areal contribution _ ( ⁇ ) ⁇ (), the NPR sensitivity can be derived from equation (17) as:
  • Equation (19) may provide a mathematic relation between the NPR photodiode sensitivity S, on one hand, and its geometrical (A) and electrical properties (C 2 and Cp) on the other.
  • the parameters controlling the NPR photodiode sensitivity are its height h and its peripheral capacitance Cp. Therefore, enhancing NPR photodiode sensitivity may be achieved either by minimizing Cp or by enlarging NPR height h or both.
  • the peripheral capacitance C P can be reduced by fully depleting the NPR photodiode with a relatively thicker anode.
  • the technique of enlarging NPR photodiode height h may be biologically implemented by light-controlled height-extension in bio-photocells.
  • the NPR structures may be fabricated based on N-doped wafer and using the lift-off masking technique to pattern various nanopillars in terms of diameter and pitch.
  • the height may be determined by etching the non-masked area using Inductive-Coupling Plasma Reactive Ion Etching (ICPRIE).
  • ICPRIE Inductive-Coupling Plasma Reactive Ion Etching
  • the doping phase is realized by ion-implanting the surface of the nanorods with Boron to create P-doped anode layer.
  • contact areas, to NPR cathode and anode layers, maybe created by heavily implanting these areas to make them ohmic. This will allows the probing and characterize the NPR structure.
  • FIG. 14 shows the dependence of the NPR photoresponsivity versus its height.
  • the curve shows a linear trend of the NPR responsivity versus its height for size below 0.7

Abstract

La présente invention concerne un appareil, un système, et un procédé ayant une structure de jonction pn 3D. Un mode de réalisation d'un appareil comprend un substrat, une première structure dopée, et une deuxième structure dopée. Dans un mode de réalisation, la première structure dopée a un premier type de dopage. La première structure dopée peut être formée au-dessus du substrat et s'étendre vers l'extérieur depuis une surface supérieure du substrat. Dans un mode de réalisation, la deuxième structure dopée a un deuxième type de dopage. La deuxième structure dopée peut être formée au-dessus du substrat et en contact avec la première structure dopée. De plus, la deuxième structure dopée peut s'étendre vers l'extérieur depuis la surface supérieure du substrat.
PCT/IB2011/000432 2010-01-29 2011-01-28 Nanostructures bio-inspirées pour mettre en œuvre des jonctions pn verticales WO2011092601A2 (fr)

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