WO2011081336A3 - 후면전극형 태양전지의 제조방법 - Google Patents

후면전극형 태양전지의 제조방법 Download PDF

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Publication number
WO2011081336A3
WO2011081336A3 PCT/KR2010/009066 KR2010009066W WO2011081336A3 WO 2011081336 A3 WO2011081336 A3 WO 2011081336A3 KR 2010009066 W KR2010009066 W KR 2010009066W WO 2011081336 A3 WO2011081336 A3 WO 2011081336A3
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WO
WIPO (PCT)
Prior art keywords
substrate
forming
manufacturing
solar cell
contact solar
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PCT/KR2010/009066
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English (en)
French (fr)
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WO2011081336A2 (ko
Inventor
문인식
조은철
이원재
임종근
Original Assignee
현대중공업 주식회사
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Application filed by 현대중공업 주식회사 filed Critical 현대중공업 주식회사
Priority to CN201080064053XA priority Critical patent/CN102770968A/zh
Priority to EP10841168.7A priority patent/EP2521187A4/en
Priority to US13/519,227 priority patent/US8481356B2/en
Priority to JP2012546994A priority patent/JP2013516081A/ja
Publication of WO2011081336A2 publication Critical patent/WO2011081336A2/ko
Publication of WO2011081336A3 publication Critical patent/WO2011081336A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명에 따른 후면전극형 태양전지의 제조방법은 비아홀이 구비된 p형 실리콘 기판을 준비하는 단계와, 확산 공정을 실시하여 기판 전체면에 에미터층을 형성하는 단계와, 상기 기판 전면 및 후면 상에 기판 일부를 선택적으로 노출하는 식각 마스크를 형성하는 단계와, 상기 식각 마스크에 노출된 영역의 기판 일부 두께를 식각하여 해당 영역의 에미터층을 제거하는 단계와, 상기 기판 전면 상에 반사방지막을 형성하는 단계 및 상기 기판 전면에 그리드 전극을 형성하고, 상기 기판 후면에 n 전극 및 p 전극을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.
PCT/KR2010/009066 2009-12-28 2010-12-17 후면전극형 태양전지의 제조방법 WO2011081336A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201080064053XA CN102770968A (zh) 2009-12-28 2010-12-17 背面接触太阳能电池的制造方法
EP10841168.7A EP2521187A4 (en) 2009-12-28 2010-12-17 METHOD FOR MANUFACTURING REAR CONTACT SOLAR CELL
US13/519,227 US8481356B2 (en) 2009-12-28 2010-12-17 Method for manufacturing a back contact solar cell
JP2012546994A JP2013516081A (ja) 2009-12-28 2010-12-17 裏面電極型の太陽電池の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0131577 2009-12-28
KR1020090131577A KR101383395B1 (ko) 2009-12-28 2009-12-28 후면전극형 태양전지의 제조방법

Publications (2)

Publication Number Publication Date
WO2011081336A2 WO2011081336A2 (ko) 2011-07-07
WO2011081336A3 true WO2011081336A3 (ko) 2011-11-17

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PCT/KR2010/009066 WO2011081336A2 (ko) 2009-12-28 2010-12-17 후면전극형 태양전지의 제조방법

Country Status (6)

Country Link
US (1) US8481356B2 (ko)
EP (1) EP2521187A4 (ko)
JP (1) JP2013516081A (ko)
KR (1) KR101383395B1 (ko)
CN (1) CN102770968A (ko)
WO (1) WO2011081336A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101341831B1 (ko) 2011-12-23 2013-12-17 한화케미칼 주식회사 후면 전극 태양전지의 제조방법

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US9153713B2 (en) 2011-04-02 2015-10-06 Csi Cells Co., Ltd Solar cell modules and methods of manufacturing the same
US9281435B2 (en) 2011-05-27 2016-03-08 Csi Cells Co., Ltd Light to current converter devices and methods of manufacturing the same
KR101854241B1 (ko) * 2011-12-13 2018-06-15 주성엔지니어링(주) 태양 전지 및 그 제조 방법
WO2013095010A1 (en) * 2011-12-23 2013-06-27 Hanwha Chemical Corporation Manufacturing method of back contact solar cell
CN102569437B (zh) * 2012-01-05 2014-05-07 中山大学 一种电场钝化背面点接触晶体硅太阳电池及其制备工艺
KR20150067146A (ko) 2012-10-10 2015-06-17 질레코 인코포레이티드 바이오매스의 처리
US8574951B1 (en) * 2013-02-20 2013-11-05 National Tsing Hua University Process of manufacturing an interdigitated back-contact solar cell
CN103337553B (zh) * 2013-06-04 2016-03-23 南京日托光伏科技有限公司 一种薄膜覆盖正面电极的硅太阳能电池及其制造工艺
CN104425651B (zh) * 2013-09-09 2016-08-10 上海理想万里晖薄膜设备有限公司 一种低温制备正面无栅极的异质结太阳电池的工艺
US9716192B2 (en) * 2014-03-28 2017-07-25 International Business Machines Corporation Method for fabricating a photovoltaic device by uniform plating on emitter-lined through-wafer vias and interconnects
CN111843185B (zh) * 2020-07-22 2022-03-11 江苏亚威艾欧斯激光科技有限公司 一种选择性发射极激光制造装置

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JP2000077690A (ja) * 1998-08-27 2000-03-14 Fuji Electric Co Ltd 光電変換装置およびその製造方法
KR20070004672A (ko) * 2004-02-05 2007-01-09 어드벤트 솔라 인코포레이티드 백 컨택 태양전지 및 그 제조방법
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101341831B1 (ko) 2011-12-23 2013-12-17 한화케미칼 주식회사 후면 전극 태양전지의 제조방법

Also Published As

Publication number Publication date
US20120288980A1 (en) 2012-11-15
JP2013516081A (ja) 2013-05-09
CN102770968A (zh) 2012-11-07
KR101383395B1 (ko) 2014-04-09
KR20110075200A (ko) 2011-07-06
WO2011081336A2 (ko) 2011-07-07
EP2521187A4 (en) 2015-11-04
EP2521187A2 (en) 2012-11-07
US8481356B2 (en) 2013-07-09

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