WO2011081131A1 - 感光性樹脂組成物、感光性ドライフィルムおよびパターン形成方法 - Google Patents
感光性樹脂組成物、感光性ドライフィルムおよびパターン形成方法 Download PDFInfo
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- WO2011081131A1 WO2011081131A1 PCT/JP2010/073532 JP2010073532W WO2011081131A1 WO 2011081131 A1 WO2011081131 A1 WO 2011081131A1 JP 2010073532 W JP2010073532 W JP 2010073532W WO 2011081131 A1 WO2011081131 A1 WO 2011081131A1
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- Prior art keywords
- monomer
- compound
- vinyl polymer
- photosensitive resin
- resin composition
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
Definitions
- the present invention relates to a photosensitive resin composition, a photosensitive dry film, and a pattern forming method using these.
- a process using a photosensitive resin composition is generally used.
- a step of forming a resist film made of the photosensitive resin composition on the surface of the substrate, and a step of forming a latent image by irradiating the resist film with light through a mask An electronic circuit is formed through a process of forming a resist pattern by developing a resist film on which a latent image is formed with a developing solution, and a process of chemically etching or plating a portion without the resist. .
- a photosensitive resin composition containing a novolac resin, a quinonediazide compound, and a compound composed of cyclohexane and phenol Patent Document 1.
- a photosensitive resin composition comprising a vinyl polymer having a structural unit derived from a monomer having a phenolic hydroxyl group and a structural unit derived from a carboxyl group-containing vinyl monomer, and a quinonediazide compound ( Patent Document 2).
- Patent Document 3 A photosensitive resin composition containing a vinyl copolymer having a structural unit derived from a carboxyl group-containing vinyl monomer, a quinonediazide compound, and a polyhydric phenol compound.
- the novolak resin contained in the photosensitive resin composition (1) is a brittle resin
- the photosensitive resin composition containing the novolak resin is used as a resist film
- there is a problem that the resist film is easily cracked. is there.
- the photosensitive resin composition is made into a dry film, the dry film is wound, so that the problem becomes remarkable.
- the photosensitive resin composition (2) has poor solubility in an aqueous sodium carbonate solution, the resolution tends to be insufficient when used in a circuit formation process in a multilayer printed wiring board by COF or a build-up method. .
- the resulting vinyl polymer has a relatively low molecular weight, and thus it is difficult to increase the molecular weight. Therefore, the plating resistance of the resist film becomes insufficient. Further, in the photosensitive resin composition (3), since the vinyl polymer does not have a phenolic hydroxyl group, there is no interaction between the phenolic hydroxyl group and the quinonediazide. For this reason, the resist film in the unexposed area is easily dissolved and the film is likely to be reduced.
- the first aspect of the present invention is a vinyl polymer (I) obtained by polymerizing a monomer mixture containing a monomer (a) having a phenolic hydroxyl group, and a carboxyl group-containing vinyl monomer.
- Y is a hydrocarbon group having 1 to 6 carbon atoms, l and m are each an integer of 1 to 3, n is 1 or 2, and p and q are 0 or 1, respectively.
- the compound (IV) is preferably a compound represented by the following formula (5-1) or the following formula (5-2).
- the vinyl polymer (I) is preferably a polymer obtained by polymerizing a monomer mixture containing a carboxyl group-containing vinyl monomer (b).
- the vinyl polymer (I) is a polymer obtained by polymerizing a monomer mixture containing the monomer (a)
- the proportion of the monomer (a) Of the total charge amount of 100 mol%, 5 to 100 mol% is preferable.
- the vinyl polymer (I) is a polymer obtained by polymerizing a monomer mixture containing the monomer (a) and the monomer (b)
- the monomer (b ) Is preferably 5 to 30 mol% out of 100 mol% of the total charged amount of monomers.
- the vinyl polymer (II) is a polymer obtained by polymerizing a monomer mixture containing the monomer (b), and the proportion of the monomer (b) Of the total charge amount of 100 mol%, 5 to 50 mol% is preferable.
- the second aspect of the present invention is a photosensitive dry film in which a resist film made of the above-described photosensitive resin composition is formed on the surface of a support film.
- the third aspect of the present invention includes a step of forming a resist film made of the photosensitive resin composition described above on the surface of a substrate, a step of exposing the resist film to form a latent image, and a latent image forming And a step of developing the resist film with a developer having a pH of 10.5 to 12.5 to form a resist pattern.
- the photosensitive resin composition of the present invention in a circuit formation process in a multilayer printed wiring board by COF or a build-up method, cracks are unlikely to occur, film loss at unexposed portions is small, and sensitivity and resolution are good. Thus, a resist film having excellent plating resistance can be formed.
- the photosensitive dry film of the present invention in a circuit formation process in a multilayer printed wiring board by COF or a build-up method, cracks are not easily generated, film loss at an unexposed portion is small, sensitivity and resolution are good. A resist film having excellent plating resistance can be formed.
- the pattern formation method of the present invention it is possible to form a highly accurate fine pattern with few defects in a circuit formation process in a multilayer printed wiring board by COF or a build-up method.
- (meth) acrylic acid means acrylic acid or methacrylic acid
- (meth) acryloyl means acryloyl or methacryloyl
- the “monomer” means a compound having a polymerizable carbon-carbon double bond.
- the photosensitive resin composition of the present invention contains a vinyl polymer (I), a vinyl polymer (II), a quinonediazide compound (III), and a specific compound (IV), and other components as necessary. including.
- the vinyl polymer (I) is a polymer obtained by polymerizing a monomer mixture containing the monomer (a) having a phenolic hydroxyl group, and if necessary, further contains a carboxyl group-containing vinyl monomer. It is a polymer obtained by polymerizing a monomer mixture containing a monomer (b) and another vinyl monomer (c) copolymerizable therewith.
- the monomer (a) having a phenolic hydroxyl group (hereinafter also simply referred to as the monomer (a)) has one or more aromatic rings, and one or more hydrogen atoms of the aromatic rings. Is a monomer substituted with a hydroxyl group.
- the monomer (a) is represented by the monomer (a1) represented by the following formula (1), the monomer (a2) represented by the following formula (2), or the following formula (3).
- Monomer (a3) is preferred.
- R 1 to R 5 are each independently a hydrogen atom, a hydroxyl group, an alkyl group having 1 to 24 carbon atoms, an aryl group having 1 to 24 carbon atoms, or an aralkyl group having 1 to 24 carbon atoms, and R 1 to R 5 At least one of them is a hydroxyl group.
- R 1 to R 5 excluding the hydroxyl group are preferably a hydrogen atom or an alkyl group having 1 to 24 carbon atoms, and more preferably a hydrogen atom from the viewpoint of availability of the monomer (a).
- X is an oxygen atom or NH.
- the monomer (a1) from the viewpoint of easy availability, the monomer (a1-1) represented by the following formula (1-1) or a single monomer represented by the following formula (1-2)
- the body (a1-2) is preferred.
- the monomer (a2) is preferably a monomer (a2-1) represented by the following formula (2-1) from the viewpoint of availability.
- the monomer (a3) is preferably a monomer (a3-1) represented by the following formula (3-1) from the viewpoint of availability.
- carboxyl group-containing vinyl monomer (b) (hereinafter also simply referred to as monomer (b)), (meth) acrylic acid, itaconic acid, itaconic acid monoester, fumaric acid, fumaric acid monoester, Maleic acid, maleic acid monoester, 2- (meth) acryloyloxyethyl phthalic acid, 2- (meth) acryloyloxyethyl hexahydrophthalic acid and the like.
- vinyl monomers (c) include monomers (a) and (meth) acrylates other than monomer (b), acrylamide Methacrylamide, acrylonitrile, methacrylonitrile, styrenes (styrene, methylstyrene, chlorostyrene, etc.) and the like.
- (meth) acrylic acid esters examples include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, i-propyl (meth) acrylate, n-butyl (meth) acrylate, Sec-butyl (meth) acrylate, tert-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, phenyl (meth) acrylate, isobornyl (meth) acrylate, hydroxymethyl (meth) acrylate, ( Examples thereof include hydroxyethyl acrylate and hydroxypropyl (meth) acrylate.
- the vinyl polymer (I) can be produced by a known polymerization method such as a solution polymerization method, a suspension polymerization method, or an emulsion polymerization method.
- a solution polymerization method or a suspension polymerization method is preferable from the viewpoint of less contamination of impurities such as an emulsifier.
- a radical polymerization initiator such as azobisisobutyronitrile (AIBN) is mixed and dissolved in the presence of an organic solvent heated to about 60 to 120 ° C. in a polymerization vessel.
- AIBN azobisisobutyronitrile
- the monomer mixture can be obtained by polymerizing by a known radical polymerization method such as a solution polymerization method in which the monomer mixture is dropped over several hours and polymerization proceeds.
- Monomer (a), monomer (b), and monomer (c) may be mixed and supplied to the polymerization vessel for polymerization, or each may be supplied alone to the polymerization vessel. Any two of the mixtures and the other may be supplied separately.
- the weight average molecular weight (Mw) (polystyrene conversion standard by gel permeation chromatography) of the vinyl copolymer (I) is not particularly limited, preferably 5000 to 80000, more preferably 6000 to 30000, and 7000. ⁇ 15000 is most preferred. If it is below the upper limit of this range, compatibility with other compounds such as a photosensitizer can be maintained. When it is at least the lower limit of this range, the durability of the coating can be maintained.
- the proportion of the monomer (a) in the monomer mixture containing the monomer (a) is 5 to 100 mol% out of 100 mol% of the total charge amount of the monomers (a) to (c). It is preferably 10 to 95 mol%, more preferably 20 to 90 mol%, particularly preferably 30 to 60 mol%.
- the proportion of the monomer (a) is 5 mol% or more, the resolution of the resist film is sufficiently high, and the reduction of the unexposed portion of the resist film is sufficiently suppressed. 90 mol% or less is preferable in terms of improving the resolution.
- the monomer (b) is used as necessary for improving the resolution.
- the ratio of the monomer (b) in the monomer mixture containing the monomer (a) and the monomer (b) is 100% by mole of the total charge amount of the monomers (a) to (c). 0 to 30 mol% is preferable, 5 to 30 mol% is more preferable, and 10 to 30 mol% is further preferable.
- the proportion of the monomer (b) is 5 mol% or more, the resolution of the resist film is sufficiently high.
- the proportion of the monomer (b) is 30 mol% or less, the film loss of the unexposed portion of the resist film is sufficiently suppressed, and cracks of the resist film are sufficiently suppressed.
- the monomer (c) is used as necessary for the following purposes.
- the polymerizability between the monomer (a) and the monomer (b) is improved.
- the ratio of the monomer (c) in the monomer mixture containing the monomer (a), the monomer (b) and the monomer (c) is the sum of the monomers (a) to (c).
- the charged amounts of 100 mol% 0 to 80 mol% is preferable.
- the vinyl polymer (II) is a polymer obtained by polymerizing a monomer mixture containing a carboxyl group-containing vinyl monomer (b), and can be further copolymerized with these if necessary.
- a monomer mixture containing the vinyl monomer (c) may be polymerized.
- the monomer mixture (a) having a phenolic hydroxyl group is not included in the monomer mixture.
- Examples of the monomer (b) and the monomer (c) include the same ones as exemplified in the above-mentioned vinyl polymer (I).
- the ratio of the monomer (b) in the monomer mixture containing the monomer (b) is 5 to 50% out of 100 mol% of the total charged amount of the monomer (b) and the monomer (c). Mol% is preferable, 5 to 30 mol% is more preferable, and 5 to 20 mol% is more preferable.
- the proportion of the monomer (b) is 5 mol% or more, the resolution of the resist film is sufficiently high.
- the proportion of the monomer (b) is 50 mol% or less, film loss in the unexposed portion of the resist film is sufficiently suppressed, and cracks in the resist film are sufficiently suppressed.
- the monomer (c) in the monomer mixture containing the monomer (b) and the monomer (c) suppresses the generation of cracks when performance such as flexibility as a dry film is insufficient. Used as needed.
- the proportion of the monomer (c) is preferably 50 to 95 mol%, more preferably 70 to 95 mol%, out of 100 mol% of the total charged amount of the monomer (b) and the monomer (c). 80 to 95 mol% is more preferable.
- the mass average molecular weight of the vinyl polymer (II) is 20,000 to 100,000, preferably 20,000 to 80,000. When the mass average molecular weight is 20,000 or more, the etching resistance and plating resistance of the resist film are sufficiently high. When the mass average molecular weight is 100,000 or less, the compatibility with other components when the resist solution is obtained is good.
- the “mass average molecular weight of the vinyl polymer (II)” is a polystyrene equivalent mass average molecular weight measured by gel permeation chromatography (GPC) under the following conditions.
- the content (mass ratio) of the vinyl polymer (I) and the vinyl polymer (II) in a total of 100% by mass of the vinyl polymer (I) and the vinyl polymer (II) is 20/80 to 95/5 is preferable, and 50/50 to 90/10 is more preferable. If the vinyl polymer (I) is 20% by mass or more and the vinyl polymer (II) is 80% by mass or less, the sensitivity and resolution of the resist film are not deteriorated, and the film thickness of the unexposed portion is sufficiently reduced. It can be suppressed. If the vinyl polymer (I) is 95% by mass or less and the vinyl polymer (II) is 5% by mass or more, the resist resistance of the resist film is sufficiently high and cracks of the resist film are sufficiently suppressed. It is done.
- quinonediazide compound (III) examples include known 1,2-quinonediazide-4-sulfonic acid ester compounds, 1,2-quinonediazide-5-sulfonic acid ester compounds, 1,2-quinonediazide-6-sulfonic acid ester compounds, 2,2-quinonediazide-7-sulfonic acid ester compound, and 1,2-quinonediazide-8-sulfonic acid ester compound.
- 1,2-naphthoquinone diazide sulfonic acid esters of trihydroxybenzophenone 1,2-naphthoquinone diazide sulfonic acid esters of tetrahydroxybenzophenone, 1,2-naphthoquinone diazide sulfonic acid esters of pentahydroxybenzophenone
- Examples include 1,2-naphthoquinone diazide sulfonic acid esters of hexahydroxybenzophenone, 1,2-naphthoquinone diazide sulfonic acid esters of (polyhydroxy) alkane, and the like.
- the quinonediazide compound (III) includes an aromatic polyhydroxy compound having 1 to 3 aromatic rings, 1,2-naphthoquinonediazide-5-sulfonic acid, and 1, from the viewpoint of sensitivity and resolution of the resist film.
- An ester with at least one compound selected from the group consisting of 2-naphthoquinonediazide-4-sulfonic acid is preferred; a compound represented by the following formula (4-1), a compound represented by the following formula (4-2) Or at least one compound selected from the group consisting of 1,2-naphthoquinonediazide-5-sulfonic acid and 1,2-naphthoquinonediazide-4-sulfonic acid, or a compound represented by the following formula (4-3): Are particularly preferred.
- the content of the quinonediazide compound (III) is preferably 5 to 70 parts by mass, more preferably 5 to 60 parts by mass with respect to 100 parts by mass in total of the vinyl polymer (I) and the vinyl polymer (II). More preferred is 5 to 15 parts by mass.
- the content ratio of the quinonediazide compound (III) is 5 parts by mass or more, the film loss of the unexposed portion of the resist film is sufficiently suppressed, and cracks of the resist film are sufficiently suppressed.
- the content ratio of the quinonediazide compound (III) is 70 parts by mass or less, the resolution of the resist film is sufficiently high.
- Compound (IV) is a compound represented by the following formula (5), and is a component that improves the alkali dissolution rate of the resist film and, as a result, improves the resolution of the resist film.
- Y is a hydrocarbon group having 1 to 6 carbon atoms, and an alkanetriyl group having 1 to 3 carbon atoms is preferable from the viewpoint of resolution of the resist film.
- Each of l and m is an integer of 1 to 3, and is preferably 1 or 2 from the viewpoint of resolution of the resist film.
- n is 1 or 2, and 1 is preferable from the viewpoint of the resolution of the resist film.
- p and q are each 0 or 1, and 0 is preferable from the viewpoint of the resolution of the resist film.
- Compound (IV) can be produced, for example, by the following method.
- a compound represented by the following formula (5-a) (wherein l and p have the same meaning as described above) and phosphorus oxychloride are reacted in amides (for example, N, N-dimethylformamide and the like).
- amides for example, N, N-dimethylformamide and the like.
- Ear reaction Next, after the reaction mixture obtained was reacted with sodium cyanide, the reaction mixture was hydrolyzed in the presence of an acid or alkali to give the following formula (5-b) (wherein l, n, p, Y Has the same meaning as above.
- this compound is condensed with a compound represented by the following formula (5-c) (wherein m and q have the same meaning as described above) in the presence of an acidic catalyst (for example, hydrochloric acid or the like).
- an acidic catalyst for example, hydrochloric acid or the like.
- the compound (IV) is particularly preferably a compound represented by the following formula (5-1) or the following formula (5-2) from the viewpoint of resolution of the resist film.
- the content of the compound (IV) is preferably 0.5 to 10 parts by mass, more preferably 1 to 5 parts by mass with respect to a total of 100 parts by mass of the vinyl polymer (I) and the vinyl polymer (II). Preferably, 2 to 4 parts by mass is more preferable. If the content rate of compound (IV) is 0.5 mass part or more, the alkali dissolution rate of a resist film will become high enough. If the content rate of compound (IV) is 10 mass parts or less, the film loss of the unexposed part of a resist film is fully suppressed.
- Examples of other components include vinyl-soluble polymers (I) and alkali-soluble resins other than vinyl-based polymers (II), leveling agents, storage stabilizers, plasticizers, light-absorbing agents, cross-linking agents, and adhesion aids.
- Examples of the alkali-soluble resin include poly (meth) acrylic acid, a copolymer of (meth) acrylic acid and (meth) acrylic acid ester, and a novolac resin.
- the content of other components is preferably 0 to 30% by mass in 100% by mass of the solid content of the photosensitive resin composition.
- the photosensitive resin composition of the present invention is usually used in the form of a dry film.
- the dry film is produced, for example, by applying a resist solution described later on the surface of a support film, drying to form a resist film, and laminating a protective film on the resist film.
- the thickness of the resist film is preferably 3 ⁇ m or more in consideration of practicality as a dry film.
- Examples of the material for the support film include polyethylene terephthalate (hereinafter referred to as PET), aromatic polyamide, polyimide, polymethylpentene, polyethylene, and polypropylene. PET is preferable in terms of cost and dry film characteristics. As a material for the protective film, polyethylene or polypropylene is preferable.
- the photosensitive resin composition of the present invention may be used in the state of a resist solution dissolved in a solvent.
- the resist solution is, for example, a method in which a vinyl polymer (I), a vinyl polymer (II), a quinonediazide compound (III), a specific compound (IV), and a solvent are mixed; a suspension polymerization method or a solution polymerization method
- the quinonediazide compound (III) and the specific compound (IV) are added to the solution containing the vinyl polymer (I) and the vinyl polymer (II) obtained in the above.
- Examples of the solvent include the following compounds.
- ketones include linear or branched ketones such as acetone, methyl ethyl ketone (hereinafter referred to as MEK), methyl isobutyl ketone, 2-pentanone, and 2-hexanone; and cyclic ketones such as cyclopentanone and cyclohexanone. It is done.
- propylene glycol monoalkyl acetates include propylene glycol monomethyl ether acetate (hereinafter referred to as PGMEA), propylene glycol monoethyl ether acetate, and the like.
- Examples of ethylene glycol monoalkyl ether acetates include ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate.
- Examples of propylene glycol monoalkyl ethers include propylene glycol monomethyl ether and propylene glycol monoethyl ether.
- Examples of ethylene glycol monoalkyl ethers include ethylene glycol monomethyl ether and ethylene glycol monoethyl ether.
- Examples of diethylene glycol alkyl ethers include diethylene glycol dimethyl ether and diethylene glycol monomethyl ether.
- Examples of the esters include ethyl acetate and ethyl lactate.
- alcohols include methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, cyclohexanol, 1-octanol and the like.
- other compounds include 1,4-dioxane, ethylene carbonate, and ⁇ -butyrolactone.
- Examples of aliphatic hydrocarbon solvents having 5 to 11 carbon atoms include pentane, 2-methylbutane, n-hexane, 2-methylpentane, 2,2-dibutylbutane, 2,3-dibutylbutane, n-heptane, n- Examples include octane, isooctane, 2,2,3-trimethylpentane, n-nonane, 2,2,5-trimethylhexane, n-decane, and n-dodecane.
- the said solvent may be used individually by 1 type, and may use 2 or more types together.
- acetone, methyl alcohol, ethyl alcohol, isopropyl alcohol, MEK, PGMEA, ethyl lactate, cyclohexanone, ⁇ -butyrolactone and the like are preferable from the viewpoint of safety and general use.
- acetone, MEK, methyl alcohol, ethyl alcohol, isopropyl alcohol and the like are preferable as the solvent since the boiling point is not so high.
- the solid content concentration of the resist solution is preferably 50% by mass or less, more preferably 40% by mass or less, and further preferably 35% by mass or less from the viewpoint of the viscosity of the resist solution.
- the solid content concentration of the resist solution is preferably 2% by mass or more, more preferably 5% by mass or more, and more preferably 8% by mass or more from the viewpoint of the productivity of the vinyl polymer (I) and the vinyl polymer (II). Is more preferable.
- the photosensitive resin composition of the present invention described above contains a vinyl polymer (I) and a vinyl polymer (II) in place of the conventional novolak resin, and therefore forms a resist film that is less susceptible to cracking. it can.
- the vinyl polymer (I) has a structural unit derived from the monomer (a) having a phenolic hydroxyl group, and the vinyl polymer (II) is a carboxyl group-containing vinyl monomer (b). Therefore, the resist film in which these are combined has little film loss in the unexposed area and good sensitivity and resolution. Further, since the vinyl polymer (II) has a relatively high molecular weight, the resist film has good etching resistance and plating resistance. Moreover, since the specific compound (IV) is contained, the resolution of the resist film is further improved.
- the pattern forming method of the present invention is a method having the following steps.
- the resist solution is applied to the surface of the substrate on which the pattern is to be formed by using a spinner, a coater or the like, and dried to form a resist film on the substrate surface.
- the dry film is laminated on the surface of the substrate so that the substrate on which the pattern is formed and the resist film are in contact with each other.
- Examples of the exposure method include an ultraviolet exposure method and a visible light exposure method.
- a method for selectively performing the exposure a method using a photomask and a scanning exposure method using laser light can be given.
- an exposure method when using a photomask either a contact exposure method or an off-contact exposure method can be used.
- the resist film is exposed through the support film to form a latent image, and then the support film is peeled off.
- Alkalis examples include inorganic alkalis (sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, etc.), primary amines (ethylamine, n-propylamine, etc.), secondary amines (Diethylamine, di-n-butylamine, etc.), tertiary amines (triethylamine, methyldiethylamine, etc.), alcohol amines (dimethylethanolamine, triethanolamine, etc.), quaternary ammonium salts (tetramethylammonium hydroxide, Tetraethylammonium hydroxide, choline hydroxide, etc.) and cyclic amines (pyrrole, piperidine, etc.). An appropriate amount of an alcohol, a surfactant, an aromatic hydroxyl group-containing compound or the like may be added to the alka
- the pH of the developer is 10.5 to 12.5, preferably 11.0 to 12.0. If the pH is 10.5 or more, the resolution of the resist film is sufficiently high. If pH is 12.5 or less, the film loss of the unexposed part of a resist film is fully suppressed. It is particularly preferable to use a 1% by mass aqueous sodium carbonate solution (pH of about 11.6) as the developer because the same process as the circuit forming process in a normal printed wiring board can be used.
- Processing method examples include known etching and plating.
- the mass average molecular weight (Mw) of the vinyl polymer was measured using GPC manufactured by Tosoh Corporation. For the measurement, three columns of Shodex GPC K-805L (trade name) manufactured by Showa Denko Co., Ltd. were used as a separation column, tetrahydrofuran (flow rate: 1.0 mL / min) was used as a solvent, and a differential was used as a detector. A refractometer was used, and polystyrene was used as a standard polymer. The measurement was performed at 40 ° C. and an injection amount of 0.1 mL.
- sensitivity The sensitivity when the resist film was exposed with an ultrahigh pressure mercury lamp so as to form a 10 ⁇ m line and space pattern and developed with a 1% by mass aqueous sodium carbonate solution (pH about 11.6) for 2 minutes was as follows. Evaluated by criteria. ⁇ : Less than 100 mJ / cm 2 . ⁇ : 100 to 200 mJ / cm 2 . X: Over 200 mJ / cm 2 .
- the resist film was exposed with an ultrahigh pressure mercury lamp so as to form a 10 ⁇ m line-and-space pattern, and developed with a 1% by mass aqueous sodium carbonate solution (pH about 11.6) for 2 minutes to obtain a pattern. Then, after copper-plating the said pattern, the pattern surface was observed with the electron microscope, and the following reference
- ⁇ No change in resist properties before and after plating.
- X Cracks, swelling, chipping and surface roughness occurred in the resist.
- Monomer (a2-1) represented by the formula (2-1) (parahydroxystyrene) 40 mol%, Methacrylic acid (monomer (b)) 15 mol%, Methyl methacrylate (monomer (c)) 20 mol%, 10 mol% of styrene (monomer (c)), 15 mol% ethyl acrylate (monomer (c)), 7 parts by mass of a polymerization initiator (manufactured by Otsuka Chemical Co., Ltd., 2,2′-azobis-2-methylbutyronitrile) and 100 parts by mass of MEK with respect to a total of 100 parts by mass of the above monomers.
- a polymerization initiator manufactured by Otsuka Chemical Co., Ltd., 2,2′-azobis-2-methylbutyronitrile
- a polymerization initiator manufactured by Otsuka Chemical Co., Ltd., 2,2′-azobis-2-methylbutyronitrile
- monomer (a1-1) is a monomer represented by the above formula (1-1) (manufactured by Osaka Organic Chemical Industry); monomer (a2-1) is the above formula The monomer represented by (2-1) (parahydroxystyrene); MAA is methacrylic acid; MMA is methyl methacrylate; St is styrene; EA is ethyl acrylate.
- Example 1 75 parts by mass of a vinyl polymer (I-1) solution, 25 parts by mass of a vinyl polymer (II-1) solution, and a compound (1 mol) represented by the above formula (4-1) as a quinonediazide compound (III) 10 parts by mass of an ester of 1,2-naphthoquinonediazide-5-sulfonic acid (3 mol), 2 parts by mass of the compound represented by the formula (5-1) as a specific compound (IV), and 200 parts by mass of MEK
- a resist solution was obtained by mixing. The resist solution was applied to the copper-clad laminate using a wire bar so that the thickness after drying was 5 ⁇ m, dried to form a resist film, and the resist film was evaluated. The results are shown in Table 3 below.
- the resist solution was applied to the surface of a PET film having a thickness of 15 ⁇ m so that the thickness after drying was 5 ⁇ m and dried to obtain a dry film.
- the dry film was laminated on a copper-clad laminate to form a resist film, and the dry film was evaluated. The results are shown in Table 3 below.
- Example 6 A dry film was obtained in the same manner as in Example 1 except that the vinyl polymer (I-1) and the vinyl polymer (II-1) were changed to a novolak resin, and the dry film was evaluated. The results are shown in Table 3 below.
- (III-1) is an ester of the compound represented by the formula (4-1) (1 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid (3 mol);
- -2) is an ester of the compound represented by the formula (4-2) (1 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid (2 mol);
- III-3) is An ester of the compound represented by the formula (4-3) (1 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid (3 mol);
- (III-4) is represented by the following formula (4- 4) An ester of a compound represented by 4) (1 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid (2 mol).
- Liquid register indicates that a resist film formed directly from a resist solution is evaluated
- DF indicates that a resist film formed through a dry film is evaluated.
- Comparative Example 1 did not contain the vinyl polymer (II), so that the plating resistance was insufficient.
- Comparative Example 2 since the mass average molecular weight of the vinyl polymer (II) was low, the plating resistance was insufficient.
- Comparative Example 3 since the vinyl polymer (II) had a high mass average molecular weight, the compatibility with the resist solution was poor. Since Comparative Example 4 did not contain the vinyl polymer (I), the sensitivity and resolution were insufficient, and the film loss was slightly reduced.
- Example 8 since an ester of an aromatic polyhydroxy compound having four aromatic rings and 1,2-naphthoquinonediazide-5-sulfonic acid was used as the quinonediazide compound (III), sensitivity and resolution were improved. Slightly decreased. Since Comparative Example 5 did not contain the specific compound (IV), the resolution was insufficient. Since the comparative example 6 used the novolak resin, the crack generate
- the photosensitive resin composition of the present invention is extremely useful industrially because it is useful as a resist in the production of multilayer printed wiring boards by chip-on-film (COF) or build-up method.
- COF chip-on-film
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Abstract
Description
本願は、2009年12月28日に、日本に出願された特願2009-297144号に基づき優先権を主張し、その内容をここに援用する。
感光性樹脂組成物を用いた回路形成プロセスでは、基材表面に感光性樹脂組成物からなるレジスト膜を形成する工程と、レジスト膜にマスクを介して光を照射して潜像を形成する工程と、潜像が形成されたレジスト膜を現像液で現像処理してレジストパターンを形成する工程と、レジストのない部分を化学的にエッチングやメッキする工程を経ることによって、電子回路が形成される。
(1)ノボラック樹脂、キノンジアジド化合物およびシクロヘキサン類とフェノール類からなる化合物を含む感光性樹脂組成物(特許文献1)。
(2)フェノール性の水酸基を有する単量体に由来する構成単位およびカルボキシル基含有ビニル系単量体に由来する構成単位を有するビニル系重合体と、キノンジアジド化合物とを含む感光性樹脂組成物(特許文献2)。
(3)カルボキシル基含有ビニル系単量体に由来する構成単位を有するビニル系共重合体、キノンジアジド化合物および多価フェノール化合物を含む感光性樹脂組成物(特許文献3)。
また、(2)の感光性樹脂組成物は、炭酸ナトリウム水溶液への溶解性が悪いため、COFやビルドアップ工法による多層プリント配線板における回路形成プロセスに用いた場合、解像度が不十分になりやすい。さらに、フェノール性の水酸基を有する単量体を含む単量体成分を重合した場合、得られるビニル系重合体は比較的低分子量であるため、高分子量化が困難である。そのため、レジスト膜の耐メッキ性が不十分となる。
また、(3)の感光性樹脂組成物においては、ビニル系重合体がフェノール性の水酸基を有していないため、フェノール性の水酸基とキノンジアジドとの相互作用がない。そのため、未露光部のレジスト膜が溶解しやすく、膜減りが生じやすい。
前記化合物(IV)は、下記式(5-1)または下記式(5-2)で表される化合物であることが好ましい。
前記ビニル系重合体(I)が、前記単量体(a)を含む単量体混合物を重合して得られた重合体である場合、前記単量体(a)の割合は、単量体の合計の仕込み量100モル%のうち、5~100モル%であることが好ましい。
前記ビニル系重合体(I)が、前記単量体(a)および前記単量体(b)を含む単量体混合物を重合して得られた重合体である場合、前記単量体(b)の割合は、単量体の合計の仕込み量100モル%のうち、5~30モル%であることが好ましい。
前記ビニル系重合体(II)は、前記単量体(b)を含む単量体混合物を重合して得られた重合体であり、前記単量体(b)の割合は、単量体の合計の仕込み量100モル%のうち、5~50モル%であることが好ましい。
本発明の第3の態様は、前述した感光性樹脂組成物からなるレジスト膜を基材の表面に形成する工程と、前記レジスト膜を露光して潜像を形成する工程と、潜像が形成された前記レジスト膜を、pH10.5~12.5の現像液で現像処理してレジストパターンを形成する工程とを有するパターン形成方法である。
本発明の感光性ドライフィルムによれば、COFやビルドアップ工法による多層プリント配線板における回路形成プロセスにおいて、クラックが発生しにくく、未露光部の膜減りが少なく、感度、解像性が良好で、耐メッキ性に優れたレジスト膜を形成できる。
本発明のパターン形成方法によれば、COFやビルドアップ工法による多層プリント配線板における回路形成プロセスにおいて、欠陥の少ない高精度の微細なパターンを形成できる。
また、本明細書において、「単量体」とは、重合性の炭素-炭素二重結合を有する化合物を意味する。
本発明の感光性樹脂組成物は、ビニル系重合体(I)とビニル系重合体(II)とキノンジアジド化合物(III)と特定の化合物(IV)とを含み、さらに必要に応じて他の成分を含む。
ビニル系重合体(I)は、フェノール性の水酸基を有する単量体(a)を含む単量体混合物を重合して得られた重合体であり、必要に応じてさらにカルボキシル基含有ビニル系単量体(b)、およびこれらと共重合可能な他のビニル系単量体(c)を含む単量体混合物を重合して得られた重合体である。
単量体(a)としては、下記式(1)で表される単量体(a1)、下記式(2)で表される単量体(a2)、または下記式(3)で表される単量体(a3)が好ましい。
Xは、酸素原子またはNHである。
また、単量体(a2)としては、入手しやすさの点から、下記式(2-1)で表される単量体(a2-1)が好ましい。
また、単量体(a3)としては、入手しやすさの点から、下記式(3-1)で表される単量体(a3-1)が好ましい。
例えば、ビニル系重合体(I)は、重合容器中に60~120℃程度に加温した有機溶媒存在下に、アゾビスイソブチロニトリル(AIBN)のようなラジカル重合開始剤を混合溶解した単量体混合物を、数時間掛けて滴下し、重合を進行させる溶液重合法など、公知のラジカル重合等により重合させることによって得ることができる。単量体(a)、単量体(b)、及び単量体(c)は混合して重合容器に供給して重合してもよいし、それぞれ単独で重合容器に供給してもよいし、いずれか2種の混合物ともう1種を別々に供給してもよい。
ビニル系共重合体(I)の質量平均分子量(Mw)(ゲルパーミエーションクロマトグラフィーによるポリスチレン換算基準)は、特に限定されるものではなく、5000~80000が好ましく、6000~30000がより好ましく、7000~15000が最も好ましい。この範囲の上限値以下であると、感光剤などのその他の配合物との相溶性が保持できる。この範囲の下限値以上であると、被膜の耐久性を保持できる。
単量体(a)および単量体(b)を含む単量体混合物における単量体(b)の割合は、単量体(a)~(c)の合計の仕込み量100モル%のうち、0~30モル%が好ましく、5~30モル%がより好ましく、10~30モル%がさらに好ましい。単量体(b)の割合が5モル%以上であれば、レジスト膜の解像性が十分に高くなる。単量体(b)の割合が30モル%以下であれば、レジスト膜の未露光部の膜減りが十分に抑えられ、またレジスト膜のクラックが十分に抑えられる。
(i)単量体(a)と単量体(b)との重合性を向上させる。
(ii)単量体(a)と単量体(b)との組み合わせのみではドライフィルムとしての柔軟性等の性能が不足している場合に、クラック発生を抑える。
単量体(a)、単量体(b)および単量体(c)を含む単量体混合物における単量体(c)の割合は、単量体(a)~(c)の合計の仕込み量100モル%のうち、0~80モル%が好ましい。
ビニル系重合体(II)は、カルボキシル基含有ビニル系単量体(b)を含む単量体混合物を重合して得られた重合体であり、必要に応じてさらにこれらと共重合可能な他のビニル系単量体(c)を含む単量体混合物を重合してもよい。ただし、前記単量体混合物中にフェノール性の水酸基を有する単量体(a)は含まない。
単量体(c)の割合は、単量体(b)および単量体(c)の合計の仕込み量100モル%のうち、50~95モル%が好ましく、70~95モル%がより好ましく、80~95モル%がさらに好ましい。
「ビニル系重合体(II)の質量平均分子量」とは、ゲルパーミエイションクロマトグラフィ(GPC)によって以下の条件で測定されるポリスチレン換算の質量平均分子量である。
(質量平均分子量の測定条件)
・GPC測定装置:東ソー社製
・分離カラム:昭和電工社製、Shodex GPC K-805L(商品名)を3本直列にしたもの
・溶媒:テトラヒドロフラン(流量:1.0mL/分)
・検出器:示差屈折計
・標準ポリマー:ポリスチレン
・測定温度:40℃
・注入量:0.1mL
キノンジアジド化合物(III)としては、公知の1,2-キノンジアジド-4-スルホン酸エステル化合物、1,2-キノンジアジド-5-スルホン酸エステル化合物、1,2-キノンジアジド-6-スルホン酸エステル化合物、1,2-キノンジアジド-7-スルホン酸エステル化合物、1,2-キノンジアジド-8-スルホン酸エステル化合物が挙げられる。具体的には、トリヒドロキシベンゾフェノンの1,2-ナフトキノンジアジドスルホン酸エステル類、テトラヒドロキシベンゾフェノンの1,2-ナフトキノンジアジドスルホン酸エステル類、ペンタヒドロキシベンゾフェノンの1,2-ナフトキノンジアジドスルホン酸エステル類、ヘキサヒドロキシベンゾフェノンの1,2-ナフトキノンジアジドスルホン酸エステル類、(ポリヒドロキシ)アルカンの1,2-ナフトキノンジアジドスルホン酸エステル類等が挙げられる。
化合物(IV)は、下記式(5)で表わされる化合物であり、レジスト膜のアルカリ溶解速度を向上させ、その結果、レジスト膜の解像性を向上させる成分である。
lおよびmは、それぞれ1~3の整数であり、レジスト膜の解像性の点から、1または2が好ましい。
nは、1または2であり、レジスト膜の解像性の点から、1が好ましい。
pおよびqは、それぞれ0または1であり、レジスト膜の解像性の点から、0が好ましい。
下記式(5-a)(式中、l、pは上記と同じ意味を有する。)で示される化合物およびオキシ塩化リンを、アミド類(例えばN,N-ジメチルホルムアミド等)中で反応(ビルスマイヤー反応)させる。ついで、得られた反応混合物にシアン化ナトリウムを反応させた後、この反応混合物を酸またはアルカリの存在下で加水分解して下記式(5-b)(式中、l、n、p、Yは上記と同じ意味を有する。)で示される化合物を得る。ついで、この化合物と下記式(5-c)(式中、m、qは上記と同じ意味を有する。)で示される化合物とを、酸性触媒(例えば塩酸等)の存在下で縮合させる。その結果、前記化合物(IV)が得られる。
他の成分としては、ビニル系重合体(I)およびビニル系重合体(II)以外のアルカリ可溶性樹脂、レベリング剤、保存安定剤、可塑剤、吸光剤、架橋剤、接着助剤等が挙げられる。
アルカリ可溶性樹脂としては、ポリ(メタ)アクリル酸、(メタ)アクリル酸と(メタ)アクリル酸エステルとの共重合体、ノボラック樹脂等が挙げられる。
他の成分の含有割合は、感光性樹脂組成物の固形分100質量%中、0~30質量%が好ましい。
本発明の感光性樹脂組成物は、通常、ドライフィルム化して用いる。
ドライフィルムは、例えば、支持フィルムの表面に後述のレジスト液を塗布し、乾燥させてレジスト膜を形成し、レジスト膜の上に保護フィルムをラミネートすることによって製造される。
レジスト膜の厚さは、ドライフィルムとしての実用性を考慮すると、3μm以上が好ましい。
保護フィルムの材料としては、ポリエチレンやポリプロピレンが好ましい。
本発明の感光性樹脂組成物は、溶媒に溶解したレジスト液の状態で用いてもよい。レジスト液は、例えば、ビニル系重合体(I)、ビニル系重合体(II)、キノンジアジド化合物(III)、特定の化合物(IV)、および溶媒を混合する方法;懸濁重合法または溶液重合法で得られたビニル系重合体(I)、およびビニル系重合体(II)を含む溶液に、キノンジアジド化合物(III)、および特定の化合物(IV)を添加する方法等によって調製される。
ケトン類としては、アセトン、メチルエチルケトン(以下、MEKと記す。)、メチルイソブチルケトン、2-ペンタノン、2-ヘキサノン等の直鎖状もしくは分岐状ケトン;シクロペンタノン、シクロヘキサノン等の環状ケトン等が挙げられる。
プロピレングリコールモノアルキルアセテート類としては、プロピレングリコールモノメチルエーテルアセテート(以下、PGMEAと記す。)、プロピレングリコールモノエチルエーテルアセテート等が挙げられる。
エチレングリコールモノアルキルエーテルアセテート類としては、エチレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート等が挙げられる。
プロピレングリコールモノアルキルエーテル類としては、プロピレングリコールモノメチルエーテル、プロピレングリコールモノエチルエーテル等が挙げられる。
エチレングリコールモノアルキルエーテル類としては、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル等が挙げられる。
ジエチレングリコールアルキルエーテル類としては、ジエチレングリコールジメチルエーテル、ジエチレングリコールモノメチルエーテル等が挙げられる。
エステル類としては、酢酸エチル、乳酸エチル等が挙げられる。
アルコール類としては、メチルアルコール、エチルアルコール、n-プロピルアルコール、イソプロピルアルコール、n-ブチルアルコール、シクロヘキサノール、1-オクタノール等が挙げられる。
その他の化合物としては、1,4-ジオキサン、炭酸エチレン、γ-ブチロラクトン等が挙げられる。
炭素数5~11の脂肪族炭化水素系溶媒としては、ペンタン、2-メチルブタン、n-ヘキサン、2-メチルペンタン、2,2-ジブチルブタン、2,3-ジブチルブタン、n-ヘプタン、n-オクタン、イソオクタン、2,2,3-トリメチルペンタン、n-ノナン、2,2,5-トリメチルヘキサン、n-デカン、n-ドデカン等が挙げられる。
溶媒としては、安全性の点、汎用的に用いられている点から、アセトン、メチルアルコール、エチルアルコール、イソプロピルアルコール、MEK、PGMEA、乳酸エチル、シクロヘキサノン、γ-ブチロラクトン等が好ましい。感光性樹脂組成物をドライフィルム化して用いる場合は、溶媒としては、沸点のあまり高くない点から、アセトン、MEK、メチルアルコール、エチルアルコール、イソプロピルアルコール等が好ましい。
本発明のパターン形成方法は、下記の工程を有する方法である。
(A)感光性樹脂組成物からなるレジスト膜を基材表面に形成する工程。
(B)レジスト膜を露光して潜像を形成する工程。
(C)潜像が形成されたレジスト膜を、pH10.5~12.5の現像液で現像処理してレジストパターンを形成する工程。
(D)レジストのない部分に加工を施し、所望のパターンを基材表面に形成する工程。
上述のレジスト液を用いる場合、パターンを形成する基材の表面に、レジスト液をスピナー、コーター等により塗布、乾燥し、基材表面にレジスト膜を形成する。
上述のドライフィルムを用いる場合、パターンを形成する基材とレジスト膜とが接するように、基材の表面にドライフィルムをラミネートする。
露光方法としては、紫外線露光法、可視光露光法等が挙げられる。
露光を選択的に行う方法としては、フォトマスクを用いる方法、レーザー光を用いた走査露光法が挙げられる。フォトマスクを用いる場合の露光方法としては、コンタクト露光法、オフコンタクト露光法のいずれも使用可能である。
上述のドライフィルムを用いた場合、支持フィルム越しにレジスト膜を露光して潜像を形成した後、支持フィルムを剥離する。
現像液としては、アルカリ類の水溶液が挙げられる。
アルカリ類としては、無機アルカリ類(水酸化ナトリウム、水酸化カリウム、炭酸ナトリウム、ケイ酸ナトリウム、メタケイ酸ナトリウム、アンモニア水等)、第一アミン類(エチルアミン、n-プロピルアミン等)、第二アミン類(ジエチルアミン、ジ-n-ブチルアミン等)、第三アミン類(トリエチルアミン、メチルジエチルアミン等)、アルコールアミン類(ジメチルエタノールアミン、トリエタノールアミン等)、第四級アンモニウム塩(テトラメチルアンモニウムヒドロキシド、テトラエチルアンモニウムヒドロキシド、コリンヒドロキシド等)、環状アミン類(ピロール、ピペリジン等)等が挙げられる。
アルカリ類の水溶液には、アルコール類、界面活性剤、芳香族水酸基含有化合物等を適当量添加してもよい。
現像液として、1質量%炭酸ナトリウム水溶液(pH約11.6)を用いると、通常のプリント配線板における回路形成プロセスと同じ工程を利用できることから特に好ましい。
加工方法としては、公知のエッチング、メッキ等が挙げられる。
実施例における評価方法は、下記の通りである。
東ソー社製のGPCを用いて、ビニル系重合体の質量平均分子量(Mw)を測定した。前記測定は、分離カラムとして昭和電工社製、Shodex GPC K-805L(商品名)を3本直列にしたものを用い、溶媒としてテトラヒドロフラン(流量:1.0mL/分)を用い、検出器として示差屈折計を用い、標準ポリマーとしてポリスチレンを用い、測定温度40℃、注入量0.1mLの条件で行った。
ドライフィルムを、直径10cmの円筒の外周に沿って折り曲げ、クラックの発生を目視にて観察し、下記の基準で評価した。
○:クラックが発生しない。
×:クラックが確認された。
ドライフィルムを露光せずに1質量%炭酸ナトリウム水溶液(pH約11.6)に1分間浸漬した後の膜減り量を測定し、下記の基準で評価した。
○:膜減り量が10%質量未満。
○△:膜減り量が10%質量以上20質量%未満。
△:膜減り量が20質量%以上30質量%未満。
×:膜減り量が30質量%以上。
レジスト膜を、10μmのラインアンドスペースパターンを形成するように超高圧水銀灯で露光し、1質量%炭酸ナトリウム水溶液(pH約11.6)にて2分間現像を行ったときの感度を、下記の基準で評価した。
○:100mJ/cm2未満。
△:100~200mJ/cm2。
×:200mJ/cm2超。
レジスト膜を、10μmのラインアンドスペースパターンを形成するように超高圧水銀灯で露光し、1質量%炭酸ナトリウム水溶液(pH約11.6)にて2分間現像を行った。その後、パターン形状を電子顕微鏡にて観察し、下記の基準で評価した。
○:露光部が完全に溶解している。
○△:パターンのエッジ部分に若干の残渣が残る。
△:露光部に若干の残渣が残る。
×:露光部に残渣が多く残る。
レジスト膜を、10μmのラインアンドスペースパターンを形成するように超高圧水銀灯で露光し、1質量%炭酸ナトリウム水溶液(pH約11.6)にて2分間現像を行い、パターンを得た。その後、前記パターンに銅メッキを施した後、パターン表面を電子顕微鏡にて観察し、下記の基準で評価した。
○:メッキ前後でレジスト性状に変化なし。
×:レジストにクラック、ふくらみ、欠け、表面のあれが生じた。
窒素導入口、攪拌機、コンデンサー、滴下漏斗、および温度計を備えたフラスコに、窒素雰囲気下で、MEK40質量部を入れた。フラスコ内を攪拌しながら内温を80℃に上げた。
その後、下記の混合物(以下、滴下溶液とも記す。)を、滴下漏斗を用いて6時間かけてフラスコ内に滴下し、さらに80℃の温度で1時間保持した:
前記式(2-1)で表される単量体(a2-1)(パラヒドロキシスチレン)40モル%、
メタクリル酸(単量体(b))15モル%、
メタクリル酸メチル(単量体(c))20モル%、
スチレン(単量体(c))10モル%、
アクリル酸エチル(単量体(c))15モル%、
上記単量体の合計100質量部に対して7質量部の重合開始剤(大塚化学社製、2,2’-アゾビス2-メチルブチロニトリル)、および
MEK100質量部。
単量体の仕込み量を表1に示す量に変更した以外は、製造例1と同様の操作でビニル系重合体(I-2)溶液および(I-3)溶液を得た。
窒素導入口、攪拌機、コンデンサー、滴下漏斗、および温度計を備えたフラスコに、窒素雰囲気下で、MEK50質量部を入れた。フラスコ内を攪拌しながら内温を80℃に上げた。
その後、下記の混合物(以下、滴下溶液とも記す。)を、滴下漏斗を用いて4時間かけてフラスコ内に滴下し、さらに80℃の温度で1時間保持した:
メタクリル酸(単量体(b))20モル%、
メタクリル酸メチル(単量体(c))46モル%、
スチレン(単量体(c))15モル%、
アクリル酸エチル(単量体(c))19モル%、
単量体の合計100質量部に対して1質量部の重合開始剤(大塚化学社製、2,2’-アゾビス2-メチルブチロニトリル)、および
MEK30質量部。
単量体の仕込み量を表1に示す量に変更した以外は、製造例4と同様の操作でビニル系重合体(II-2)溶液および(II-3)溶液を得た。
フラスコに入れるMEKを45質量部に変更し、重合開始剤の仕込み量を単量体の合計100質量部に対して0.25質量部に変更し、温度を室温まで下げた後に添加するMEKを70質量部に変更した以外は、製造例4と同様の操作でビニル系重合体(II-4)溶液を得た。
重合開始剤の仕込み量を単量体の合計100質量部に対して3質量部に変更した以外は、製造例4と同様の操作でビニル系重合体(II-5)溶液を得た。
フラスコに入れるMEKを40質量部に変更し、重合開始剤の仕込み量を単量体の合計100質量部に対して0.2質量部に変更し、温度を室温まで下げた後に添加するMEKを70質量部に変更した以外は、製造例4と同様の操作でビニル系重合体(II-6)溶液を得た。
(式(5-1)で表される化合物の合成)
4-ヒドロキシマンデル酸16.8質量部、フェノール37.6質量部および10%塩酸170質量部を混合した混合物を60~65℃で2時間反応させた。反応終了後、前記混合物に、イオン交換水300質量部およびアセトン300質量部を混合した混合物を加えて60℃で分液した。得られた有機層をイオン交換水で洗浄した。洗浄後の有機層を減圧条件で濃縮し、得られた濃縮残分に、アセトン5質量部およびトルエン80質量部を混合した混合液を添加して、再結晶化し、前記式(5-1)で示される特定の化合物(IV)を得た。1H-NMRおよびIRから目的の化合物が得られたことを確認した。
〔式(5-2)で表される化合物の合成 )
フェノール94質量部、レブリン酸58質量部、水45質量部および濃硫酸180質量部を混合した混合物を20℃で20時間反応させた。反応終了後、前記混合物に、イオン交換水300質量部および酢酸エチル300質量部を混合した混合物を加えて分液した。得られた有機層に重炭酸ナトリウム水溶液を加え、有機層を抽出した。得られた重炭酸塩抽出物を酸性にして、エーテルで抽出し、真空脱揮して前記式(5-2)で示される特定の化合物(IV)を得た。1H-NMRおよびIRから目的の化合物が得られたことを確認した。
ビニル系重合体(I-1)溶液75質量部、ビニル系重合体(II-1)溶液25質量部、キノンジアジド化合物(III)として前記式(4-1)で表される化合物(1モル)と1,2-ナフトキノンジアジド-5-スルホン酸(3モル)とのエステル10質量部、特定の化合物(IV)として前記式(5-1)で表される化合物2質量部およびMEK200質量部を混合し、レジスト液を得た。
銅貼積層板に、ワイヤーバーを用いて、レジスト液を乾燥後の厚さが5μmとなるように塗布し、乾燥させてレジスト膜を形成し、前記レジスト膜の評価を行った。結果を以下の表3に示す。
銅貼積層板に、前記ドライフィルムをラミネートしてレジスト膜を形成し、前記ドライフィルムの評価を行った。結果を以下の表3に示す。
ビニル系重合体(I)の種類および配合量、ビニル系重合体(II)の種類および配合量、キノンジアジド化合物(III)の種類、特定の化合物(IV)の種類および配合量、MEKの配合量、を以下の表2に示すように変更した以外は、実施例1と同様にしてドライフィルムを得、前記ドライフィルムの評価を行った。結果を以下の表3に示す。
ビニル系重合体(I-1)およびビニル系重合体(II-1)をノボラック樹脂に変更した以外は、実施例1と同様にしてドライフィルムを得、前記ドライフィルムの評価を行った。結果を以下の表3に示す。
比較例2は、ビニル系重合体(II)の質量平均分子量が低いため、耐メッキ性が不十分となった。
比較例3は、ビニル系重合体(II)の質量平均分子量が高いため、レジスト液にした際の相溶性が悪かった。
比較例4は、ビニル系重合体(I)を含んでいないため、感度、解像性が不十分となり、膜減りが若干低下した。
比較例5は、特定の化合物(IV)を含んでいないため、解像性が不十分となった。
比較例6は、ノボラック樹脂を用いているため、クラックが発生した。
Claims (10)
- 前記ビニル系重合体(I)が、さらにカルボキシル基含有ビニル系単量体(b)を含む単量体混合物を重合して得られた重合体である、請求項1に記載の感光性樹脂組成物。
- 前記ビニル系重合体(I)が、前記単量体(a)を含む単量体混合物を重合して得られた重合体であり、前記単量体(a)の割合が、単量体の合計の仕込み量100モル%のうち、5~100モル%である、請求項1に記載の感光性樹脂組成物。
- 前記ビニル系重合体(I)が、前記単量体(a)および前記単量体(b)を含む単量体混合物を重合して得られた重合体であり、前記単量体(b)の割合が、単量体の合計の仕込み量100モル%のうち、5~30モル%である、請求項3に記載の感光性樹脂組成物。
- 前記ビニル系重合体(II)が中、前記単量体(b)を含む単量体混合物を重合して得られた重合体であり、前記単量体(b)の割合が、単量体の合計の仕込み量100モル%のうち、5~50モル%である、請求項1に記載の感光性樹脂組成物。
- 前記キノンジアジド化合物(III)が、芳香族環を1~3個有する芳香族ポリヒドロキシ化合物と、1,2-ナフトキノンジアジド-5-スルホン酸および1,2-ナフトキノンジアジド-4-スルホン酸からなる群から選ばれる少なくとも1種の化合物とのエステルである、請求項1に記載の感光性樹脂組成物。
- 請求項1に記載の感光性樹脂組成物からなるレジスト膜が支持フィルムの表面に形成された、感光性ドライフィルム。
- 請求項1に記載の感光性樹脂組成物からなるレジスト膜を基材の表面に形成する工程と、前記レジスト膜を露光して潜像を形成する工程と、潜像が形成された前記レジスト膜を、pH10.5~12.5の現像液で現像処理してレジストパターンを形成する工程とを有する、パターン形成方法。
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KR20150009614A (ko) | 2012-07-10 | 2015-01-26 | 가부시키가이샤 마이쿠로 푸로세스 | 감광성 수지 조성물, 감광성 드라이 필름, 패턴 형성 방법, 프린트 배선판 및 그의 제조 방법 |
CN104541203A (zh) * | 2012-07-10 | 2015-04-22 | 株式会社微处理 | 感光性树脂组合物、感光性干膜、图案形成方法、印刷布线板及其制造方法 |
KR101595709B1 (ko) * | 2012-07-10 | 2016-02-24 | 가부시키가이샤 마이쿠로 푸로세스 | 감광성 수지 조성물, 감광성 드라이 필름, 패턴 형성 방법, 프린트 배선판 및 그의 제조 방법 |
US9625812B2 (en) | 2012-07-10 | 2017-04-18 | Micro Process Inc. | Photosensitive resin composition, photosensitive dry film, pattern formation method, printed circuit board, and method for producing same |
CN104541203B (zh) * | 2012-07-10 | 2021-06-08 | 株式会社微处理 | 感光性树脂组合物、感光性干膜、图案形成方法、印刷布线板及其制造方法 |
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Publication number | Publication date |
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TW201126270A (en) | 2011-08-01 |
TWI501036B (zh) | 2015-09-21 |
JP5685180B2 (ja) | 2015-03-18 |
CN102741750A (zh) | 2012-10-17 |
US20130004895A1 (en) | 2013-01-03 |
CN102741750B (zh) | 2017-03-01 |
KR101851407B1 (ko) | 2018-04-23 |
US8647807B2 (en) | 2014-02-11 |
JPWO2011081131A1 (ja) | 2013-05-13 |
KR20130006594A (ko) | 2013-01-17 |
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