WO2011056948A3 - Procédés de texturage de surfaces pour réflexion contrôlée - Google Patents

Procédés de texturage de surfaces pour réflexion contrôlée Download PDF

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Publication number
WO2011056948A3
WO2011056948A3 PCT/US2010/055418 US2010055418W WO2011056948A3 WO 2011056948 A3 WO2011056948 A3 WO 2011056948A3 US 2010055418 W US2010055418 W US 2010055418W WO 2011056948 A3 WO2011056948 A3 WO 2011056948A3
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WO
WIPO (PCT)
Prior art keywords
texturing
substrate
microstamp
another aspect
surface structure
Prior art date
Application number
PCT/US2010/055418
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English (en)
Other versions
WO2011056948A2 (fr
Inventor
Tianniu Chen
Michael B. Korzenski
Ping Jiang
Lawrence H. Dubois
Original Assignee
Advanced Technology Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials, Inc. filed Critical Advanced Technology Materials, Inc.
Publication of WO2011056948A2 publication Critical patent/WO2011056948A2/fr
Publication of WO2011056948A3 publication Critical patent/WO2011056948A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)

Abstract

L'invention porte sur de nouveaux procédés pour le texturage de cellules photovoltaïques, dans lesquels procédés le texturage minimise les pertes de facteur de réflexion, et augmente par conséquent le rendement des piles solaires. Dans un aspect, une micro-empreinte avec le miroir inverse de la structure de surface optimale est décrite. Le substrat de cellule photovoltaïque devant être gravé et la micro-empreinte sont immergés dans un bain et pressés l'un contre l'autre afin de produire la structure de surface optimale. Dans un autre aspect, des structures d'échelle nanométrique sont introduites sur la surface d'une cellule photovoltaïque par déposition de nanoparticules sur une surface de substrat ou introduction de piqûres induites par un métal dans celle-ci. Dans encore un autre aspect, une source de plasma distante (RPS) ou une gravure à ions réactifs (RIE) est utilisée pour graver des éléments d'échelle nanométrique dans un substrat contenant du silicium.
PCT/US2010/055418 2009-11-05 2010-11-04 Procédés de texturage de surfaces pour réflexion contrôlée WO2011056948A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US25844909P 2009-11-05 2009-11-05
US61/258,449 2009-11-05
US31347310P 2010-03-12 2010-03-12
US61/313,473 2010-03-12

Publications (2)

Publication Number Publication Date
WO2011056948A2 WO2011056948A2 (fr) 2011-05-12
WO2011056948A3 true WO2011056948A3 (fr) 2011-08-25

Family

ID=43970744

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/055418 WO2011056948A2 (fr) 2009-11-05 2010-11-04 Procédés de texturage de surfaces pour réflexion contrôlée

Country Status (2)

Country Link
TW (1) TW201126744A (fr)
WO (1) WO2011056948A2 (fr)

Cited By (2)

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CN103563093B (zh) * 2011-06-07 2016-05-25 东友精细化工有限公司 单晶硅片及其制备方法
CN104576826B (zh) * 2014-12-17 2017-04-26 山东力诺太阳能电力股份有限公司 一种太阳能电池片的后处理方法

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JP5479301B2 (ja) * 2010-05-18 2014-04-23 株式会社新菱 エッチング液およびシリコン基板の表面加工方法
KR20130099948A (ko) 2010-08-20 2013-09-06 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 E-폐기물로부터 귀금속 및 베이스 금속을 회수하는 지속가능한 방법
TWI447925B (zh) * 2010-09-14 2014-08-01 Wakom Semiconductor Corp 單晶矽太陽能電池製造方法以及適用於單晶矽太陽能電池製造方法的蝕刻方法
DE102011084346A1 (de) * 2011-10-12 2013-04-18 Schott Solar Ag Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer
KR101933527B1 (ko) * 2011-10-19 2018-12-31 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
WO2013058477A2 (fr) * 2011-10-19 2013-04-25 동우화인켐 주식회사 Composition fluide d'attaque chimique de texture et procédé d'attaque chimique de texture pour des tranches de silicium cristallin
JP2014534630A (ja) * 2011-10-19 2014-12-18 ドングウー ファイン−ケム カンパニー、 リミテッドＤｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． 結晶性シリコンウェハーのテクスチャエッチング液組成物及びテクスチャエッチング方法
JP5866477B2 (ja) * 2012-03-19 2016-02-17 アライアンス フォー サステイナブル エナジー リミテッド ライアビリティ カンパニー シリコン表面の銅支援反射防止エッチング
CN102677060B (zh) * 2012-05-15 2013-10-30 韩华新能源（启东）有限公司 多晶硅回蚀溶液及其用途
KR101804266B1 (ko) * 2012-07-25 2017-12-04 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
CN103806107A (zh) * 2012-11-02 2014-05-21 无锡尚德太阳能电力有限公司 一种多晶硅片制绒方法及制绒液
CN103996742B (zh) * 2014-05-21 2016-08-24 奥特斯维能源（太仓）有限公司 一种改善晶体硅太阳电池电性能的边缘刻蚀方法
CN108624962A (zh) * 2018-05-03 2018-10-09 上海汉遥新材料科技有限公司 一种金刚线多晶切片制绒添加剂及其制备方法、使用方法
TW202106647A (zh) * 2019-05-15 2021-02-16 美商康寧公司 在高溫下用高濃度鹼金屬氫氧化物減少紋理化玻璃、玻璃陶瓷以及陶瓷製品之厚度的方法
WO2020243211A1 (fr) * 2019-05-31 2020-12-03 Corning Incorporated Gravure de matériaux en verre et en vitrocéramique dans de l'hydroxyde contenant un sel fondu
CN113136144A (zh) * 2021-03-18 2021-07-20 武汉风帆电化科技股份有限公司 一种用于晶硅片快速碱抛光的抛光剂及其应用方法
CN114316804A (zh) * 2021-12-15 2022-04-12 嘉兴市小辰光伏科技有限公司 一种改善单晶硅碱抛光外观问题的添加剂及其抛光工艺

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WO2005072235A2 (fr) * 2004-01-23 2005-08-11 University Of Massachusetts Matériaux structurés et procédés associés
KR20080063203A (ko) * 2006-12-30 2008-07-03 고려대학교 산학협력단 복합 임프린팅 스탬프 및 그 제조방법
KR20090080150A (ko) * 2008-01-21 2009-07-24 고려대학교 산학협력단 삼중블록공중합체를 이용한 태양전지 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005072235A2 (fr) * 2004-01-23 2005-08-11 University Of Massachusetts Matériaux structurés et procédés associés
KR20080063203A (ko) * 2006-12-30 2008-07-03 고려대학교 산학협력단 복합 임프린팅 스탬프 및 그 제조방법
KR20090080150A (ko) * 2008-01-21 2009-07-24 고려대학교 산학협력단 삼중블록공중합체를 이용한 태양전지 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103563093B (zh) * 2011-06-07 2016-05-25 东友精细化工有限公司 单晶硅片及其制备方法
CN104576826B (zh) * 2014-12-17 2017-04-26 山东力诺太阳能电力股份有限公司 一种太阳能电池片的后处理方法

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Publication number Publication date
WO2011056948A2 (fr) 2011-05-12
TW201126744A (en) 2011-08-01

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