WO2011040782A3 - 태양광 발전장치 및 이의 제조방법 - Google Patents

태양광 발전장치 및 이의 제조방법 Download PDF

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Publication number
WO2011040782A3
WO2011040782A3 PCT/KR2010/006709 KR2010006709W WO2011040782A3 WO 2011040782 A3 WO2011040782 A3 WO 2011040782A3 KR 2010006709 W KR2010006709 W KR 2010006709W WO 2011040782 A3 WO2011040782 A3 WO 2011040782A3
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WIPO (PCT)
Prior art keywords
power generation
solar power
generation apparatus
manufacturing
layer arranged
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PCT/KR2010/006709
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English (en)
French (fr)
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WO2011040782A2 (ko
Inventor
최철환
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엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to EP10820855A priority Critical patent/EP2426731A2/en
Priority to US13/375,305 priority patent/US20120174977A1/en
Priority to JP2012532018A priority patent/JP2013506991A/ja
Priority to CN2010800439004A priority patent/CN102576758A/zh
Publication of WO2011040782A2 publication Critical patent/WO2011040782A2/ko
Publication of WO2011040782A3 publication Critical patent/WO2011040782A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

태양광 발전장치 및 이의 제조방법이 개시된다. 태양광 발전장치는 기판; 상기 기판 상에 배치되는 후면전극층; 상기 후면전극층 상에 배치되는 합금층; 상기 합금층 상에 배치되는 광 흡수층; 및 상기 광 흡수층 상에 배치되는 전면전극층을 포함한다.
PCT/KR2010/006709 2009-09-30 2010-09-30 태양광 발전장치 및 이의 제조방법 WO2011040782A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP10820855A EP2426731A2 (en) 2009-09-30 2010-09-30 Solar power generation apparatus and manufacturing method thereof
US13/375,305 US20120174977A1 (en) 2009-09-30 2010-09-30 Solar Power Generation Apparatus and Manufacturing Method Thereof
JP2012532018A JP2013506991A (ja) 2009-09-30 2010-09-30 太陽光発電装置及びその製造方法
CN2010800439004A CN102576758A (zh) 2009-09-30 2010-09-30 太阳能电池设备及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0093634 2009-09-30
KR1020090093634A KR101172132B1 (ko) 2009-09-30 2009-09-30 태양전지 및 이의 제조방법

Publications (2)

Publication Number Publication Date
WO2011040782A2 WO2011040782A2 (ko) 2011-04-07
WO2011040782A3 true WO2011040782A3 (ko) 2011-09-15

Family

ID=43826806

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006709 WO2011040782A2 (ko) 2009-09-30 2010-09-30 태양광 발전장치 및 이의 제조방법

Country Status (6)

Country Link
US (1) US20120174977A1 (ko)
EP (1) EP2426731A2 (ko)
JP (1) JP2013506991A (ko)
KR (1) KR101172132B1 (ko)
CN (1) CN102576758A (ko)
WO (1) WO2011040782A2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101277111B1 (ko) * 2010-12-27 2013-06-20 주식회사 아바코 태양 전지 및 그 제조 방법
FR2983642B1 (fr) * 2011-12-05 2014-01-03 Nexcis Interface perfectionnee entre une couche i-iii-vi2 et une couche de contact arriere, dans une cellule photovoltaique.
JP5988373B2 (ja) * 2011-12-20 2016-09-07 京セラ株式会社 光電変換装置および光電変換装置の製造方法
US9935211B2 (en) 2012-04-25 2018-04-03 Guardian Glass, LLC Back contact structure for photovoltaic devices such as copper-indium-diselenide solar cells
US9246025B2 (en) 2012-04-25 2016-01-26 Guardian Industries Corp. Back contact for photovoltaic devices such as copper-indium-diselenide solar cells
US8809674B2 (en) 2012-04-25 2014-08-19 Guardian Industries Corp. Back electrode configuration for electroplated CIGS photovoltaic devices and methods of making same
US9419151B2 (en) * 2012-04-25 2016-08-16 Guardian Industries Corp. High-reflectivity back contact for photovoltaic devices such as copper—indium-diselenide solar cells
US20140130858A1 (en) * 2012-11-15 2014-05-15 Samsung Sdi Co., Ltd. Solar cell
US9876049B2 (en) 2014-12-05 2018-01-23 Seiko Epson Corporation Photoelectric conversion device, method for manufacturing photoelectric conversion device, and electronic apparatus
CN106024937A (zh) * 2016-06-23 2016-10-12 盐城普兰特新能源有限公司 一种cigs基薄膜太阳能电池及其制备方法

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JP2003282908A (ja) * 2002-03-25 2003-10-03 Honda Motor Co Ltd 光吸収層の作製方法および装置
JP2006059993A (ja) * 2004-08-19 2006-03-02 Matsushita Electric Ind Co Ltd 太陽電池とその製造方法
KR20070004593A (ko) * 2003-12-25 2007-01-09 쇼와쉘세키유가부시키가이샤 집적형 박막 태양 전지 및 이의 제조방법

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KR20070004593A (ko) * 2003-12-25 2007-01-09 쇼와쉘세키유가부시키가이샤 집적형 박막 태양 전지 및 이의 제조방법
JP2006059993A (ja) * 2004-08-19 2006-03-02 Matsushita Electric Ind Co Ltd 太陽電池とその製造方法

Also Published As

Publication number Publication date
WO2011040782A2 (ko) 2011-04-07
CN102576758A (zh) 2012-07-11
US20120174977A1 (en) 2012-07-12
KR20110035797A (ko) 2011-04-06
EP2426731A2 (en) 2012-03-07
JP2013506991A (ja) 2013-02-28
KR101172132B1 (ko) 2012-08-10

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