WO2011040780A3 - 태양광 발전장치 및 이의 제조방법 - Google Patents
태양광 발전장치 및 이의 제조방법 Download PDFInfo
- Publication number
- WO2011040780A3 WO2011040780A3 PCT/KR2010/006707 KR2010006707W WO2011040780A3 WO 2011040780 A3 WO2011040780 A3 WO 2011040780A3 KR 2010006707 W KR2010006707 W KR 2010006707W WO 2011040780 A3 WO2011040780 A3 WO 2011040780A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power generation
- solar power
- generation apparatus
- manufacturing
- electrode layer
- Prior art date
Links
- 238000010248 power generation Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 230000000737 periodic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012532016A JP5576489B2 (ja) | 2009-09-30 | 2010-09-30 | 太陽光発電装置及びその製造方法 |
US13/499,069 US20120180869A1 (en) | 2009-09-30 | 2010-09-30 | Solar power generation apparatus and manufacturing method thereof |
EP10820853A EP2485272A2 (en) | 2009-09-30 | 2010-09-30 | Solar power generation apparatus and manufacturing method thereof |
CN2010800542950A CN102725862A (zh) | 2009-09-30 | 2010-09-30 | 太阳能电池设备及其制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0093604 | 2009-09-30 | ||
KR1020090093604A KR101154763B1 (ko) | 2009-09-30 | 2009-09-30 | 태양전지 및 이의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2011040780A2 WO2011040780A2 (ko) | 2011-04-07 |
WO2011040780A3 true WO2011040780A3 (ko) | 2011-09-15 |
Family
ID=43826804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2010/006707 WO2011040780A2 (ko) | 2009-09-30 | 2010-09-30 | 태양광 발전장치 및 이의 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120180869A1 (ko) |
EP (1) | EP2485272A2 (ko) |
JP (1) | JP5576489B2 (ko) |
KR (1) | KR101154763B1 (ko) |
CN (1) | CN102725862A (ko) |
WO (1) | WO2011040780A2 (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101243877B1 (ko) * | 2011-06-03 | 2013-03-20 | 주성엔지니어링(주) | 태양전지 및 태양전지의 제조 방법 |
KR101283240B1 (ko) * | 2011-12-19 | 2013-07-11 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
DE102012205375A1 (de) * | 2012-04-02 | 2013-10-02 | Robert Bosch Gmbh | Mehrschicht-Rückelektrode für eine photovoltaische Dünnschichtsolarzelle, Verwen-dung der Mehrschicht-Rückelektrode für die Herstellung von Dünnschichtsolarzellen und -modulen, photovoltaische Dünnschichtsolarzellen und -module enthaltend die Mehrschicht-Rückelektrode sowie ein Verfahren zur Herstellung photovoltaischer Dünnschichtsolarzellen und -module |
FR2989223B1 (fr) * | 2012-04-06 | 2014-12-26 | Commissariat Energie Atomique | Procede pour realiser un module photovoltaique avec une etape de gravure p3 et une eventuelle etape p1. |
US9130113B2 (en) | 2012-12-14 | 2015-09-08 | Tsmc Solar Ltd. | Method and apparatus for resistivity and transmittance optimization in TCO solar cell films |
US20140193941A1 (en) * | 2013-01-10 | 2014-07-10 | Samsung Sdi Co., Ltd. | Method for manufacturing solar cell |
US9105799B2 (en) * | 2013-06-10 | 2015-08-11 | Tsmc Solar Ltd. | Apparatus and method for producing solar cells using light treatment |
CN105140320B (zh) * | 2015-06-26 | 2017-06-23 | 厦门神科太阳能有限公司 | 一种cigs基薄膜太阳能电池及其制造方法 |
EP3472871A4 (en) * | 2016-06-21 | 2020-01-29 | NewSouth Innovations Pty Limited | PHOTOVOLTAIC DEVICE WITH COPPER-BASED CHALCOGENIDE AND METHOD FOR SHAPING THEREOF |
KR102452088B1 (ko) * | 2020-11-30 | 2022-10-11 | 한국과학기술연구원 | 씨스루형 박막 태양전지 모듈 및 그의 제조방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002064062A (ja) * | 2000-08-17 | 2002-02-28 | Honda Motor Co Ltd | 化合物半導体の成膜方法 |
JP2006147759A (ja) * | 2004-11-18 | 2006-06-08 | Honda Motor Co Ltd | カルコパイライト型薄膜太陽電池の製造方法 |
KR20070004593A (ko) * | 2003-12-25 | 2007-01-09 | 쇼와쉘세키유가부시키가이샤 | 집적형 박막 태양 전지 및 이의 제조방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10135501A (ja) * | 1996-09-05 | 1998-05-22 | Yazaki Corp | 半導体装置及びその製造方法並びに太陽電池 |
JP2002094089A (ja) * | 2000-09-11 | 2002-03-29 | Honda Motor Co Ltd | 化合物薄膜太陽電池の製造方法 |
US7736940B2 (en) * | 2004-03-15 | 2010-06-15 | Solopower, Inc. | Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication |
US7547569B2 (en) * | 2006-11-22 | 2009-06-16 | Applied Materials, Inc. | Method for patterning Mo layer in a photovoltaic device comprising CIGS material using an etch process |
-
2009
- 2009-09-30 KR KR1020090093604A patent/KR101154763B1/ko not_active IP Right Cessation
-
2010
- 2010-09-30 JP JP2012532016A patent/JP5576489B2/ja not_active Expired - Fee Related
- 2010-09-30 CN CN2010800542950A patent/CN102725862A/zh active Pending
- 2010-09-30 WO PCT/KR2010/006707 patent/WO2011040780A2/ko active Application Filing
- 2010-09-30 EP EP10820853A patent/EP2485272A2/en not_active Withdrawn
- 2010-09-30 US US13/499,069 patent/US20120180869A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002064062A (ja) * | 2000-08-17 | 2002-02-28 | Honda Motor Co Ltd | 化合物半導体の成膜方法 |
KR20070004593A (ko) * | 2003-12-25 | 2007-01-09 | 쇼와쉘세키유가부시키가이샤 | 집적형 박막 태양 전지 및 이의 제조방법 |
JP2006147759A (ja) * | 2004-11-18 | 2006-06-08 | Honda Motor Co Ltd | カルコパイライト型薄膜太陽電池の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102725862A (zh) | 2012-10-10 |
JP5576489B2 (ja) | 2014-08-20 |
KR101154763B1 (ko) | 2012-06-18 |
KR20110035771A (ko) | 2011-04-06 |
WO2011040780A2 (ko) | 2011-04-07 |
EP2485272A2 (en) | 2012-08-08 |
JP2013506989A (ja) | 2013-02-28 |
US20120180869A1 (en) | 2012-07-19 |
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