WO2011037393A3 - 실리콘 잉곳 제조장치 - Google Patents

실리콘 잉곳 제조장치 Download PDF

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Publication number
WO2011037393A3
WO2011037393A3 PCT/KR2010/006473 KR2010006473W WO2011037393A3 WO 2011037393 A3 WO2011037393 A3 WO 2011037393A3 KR 2010006473 W KR2010006473 W KR 2010006473W WO 2011037393 A3 WO2011037393 A3 WO 2011037393A3
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WO
WIPO (PCT)
Prior art keywords
crucible
manufacturing silicon
silicon ingots
mounting unit
chamber
Prior art date
Application number
PCT/KR2010/006473
Other languages
English (en)
French (fr)
Other versions
WO2011037393A2 (ko
Inventor
이근택
박성은
박종훈
Original Assignee
주식회사 세미머티리얼즈
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 세미머티리얼즈 filed Critical 주식회사 세미머티리얼즈
Priority to CN2010800433667A priority Critical patent/CN102666943A/zh
Publication of WO2011037393A2 publication Critical patent/WO2011037393A2/ko
Publication of WO2011037393A3 publication Critical patent/WO2011037393A3/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

본 발명은 실리콘 잉곳 제조장치에 관한 것으로, 챔버와, 챔버 내에 설치되는 도가니와, 도가니를 발열시키는 발열부와, 도가니가 올려지는 도가니 탑재부와, 도가니 탑재부 아래에 형성되는 적어도 2개 이상의 수냉로드군을 포함하되, 적어도 2개 이상의 수냉로드군은 도가니 탑재부 중심으로부터 외측으로 서로 이격되게 설치되며 서로 다른 물 공급관이 연결되는 것을 특징으로 한다.
PCT/KR2010/006473 2009-09-28 2010-09-20 실리콘 잉곳 제조장치 WO2011037393A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800433667A CN102666943A (zh) 2009-09-28 2010-09-20 硅锭的制备装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090091632A KR100947836B1 (ko) 2009-09-28 2009-09-28 실리콘 잉곳 제조장치
KR10-2009-0091632 2009-09-28

Publications (2)

Publication Number Publication Date
WO2011037393A2 WO2011037393A2 (ko) 2011-03-31
WO2011037393A3 true WO2011037393A3 (ko) 2011-09-15

Family

ID=42183377

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006473 WO2011037393A2 (ko) 2009-09-28 2010-09-20 실리콘 잉곳 제조장치

Country Status (3)

Country Link
KR (1) KR100947836B1 (ko)
CN (1) CN102666943A (ko)
WO (1) WO2011037393A2 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2530187A1 (en) * 2011-06-03 2012-12-05 Evonik Solar Norge AS Refining of silicon by directional solidification in an oxygen-containing atmosphere
CN103890242B (zh) * 2011-08-01 2018-05-08 Gtat公司 液体冷却热交换器
US20130239621A1 (en) * 2011-09-14 2013-09-19 MEMC Singapore, Pte. Ltd. (UEN200614797D) Directional Solidification Furnace With Laterally Movable Insulation System
WO2013040219A1 (en) * 2011-09-14 2013-03-21 Memc Singapore Pte, Ltd. Directional solidification furnace having movable heat exchangers
KR101292223B1 (ko) 2011-12-08 2013-08-02 주식회사 엘지실트론 실리콘 단결정 성장용 수냉관 및 이를 포함한 실리콘 단결정 성장 장치
KR101390804B1 (ko) * 2013-01-23 2014-05-02 주식회사 엘지실트론 단결정 잉곳 성장 장치
KR101444589B1 (ko) 2013-03-29 2014-09-26 충남대학교산학협력단 용융염 전해정련법을 이용한 금속 스크랩으로부터 고순도 금속 제조방법 및 염증류 통합 잉곳 제조 장치
CN108505113A (zh) * 2018-05-24 2018-09-07 江阴东升新能源股份有限公司 硅芯方锭铸锭炉定向导气块

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10182137A (ja) * 1996-12-26 1998-07-07 Kawasaki Steel Corp 太陽電池用シリコンの凝固精製方法及び装置
US6027563A (en) * 1996-02-24 2000-02-22 Ald Vacuum Technologies Gmbh Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber
KR100916843B1 (ko) * 2009-01-13 2009-09-14 김영조 고효율 다결정 실리콘 잉곳 제조장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166711A (ja) * 1986-12-26 1988-07-09 Osaka Titanium Seizo Kk 多結晶シリコン鋳塊の製造法
JP2005015264A (ja) * 2003-06-25 2005-01-20 Canon Inc 結晶製造装置及び方法
JP4777880B2 (ja) * 2004-03-29 2011-09-21 京セラ株式会社 シリコン鋳造装置およびシリコンインゴットの製造方法
CN200968773Y (zh) * 2006-05-08 2007-10-31 上海普罗新能源有限公司 制备多晶硅用铸锭炉
KR100861412B1 (ko) * 2006-06-13 2008-10-07 조영상 다결정 실리콘 잉곳 제조장치
CN201151753Y (zh) * 2007-11-07 2008-11-19 常州华盛天龙机械有限公司 一种石墨导热块

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6027563A (en) * 1996-02-24 2000-02-22 Ald Vacuum Technologies Gmbh Method and apparatus for the oriented solidification of molten silicon to form an ingot in a bottomless crystallization chamber
JPH10182137A (ja) * 1996-12-26 1998-07-07 Kawasaki Steel Corp 太陽電池用シリコンの凝固精製方法及び装置
KR100916843B1 (ko) * 2009-01-13 2009-09-14 김영조 고효율 다결정 실리콘 잉곳 제조장치

Also Published As

Publication number Publication date
WO2011037393A2 (ko) 2011-03-31
KR100947836B1 (ko) 2010-03-18
CN102666943A (zh) 2012-09-12

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