WO2011031098A3 - 반도체 발광소자 - Google Patents

반도체 발광소자 Download PDF

Info

Publication number
WO2011031098A3
WO2011031098A3 PCT/KR2010/006191 KR2010006191W WO2011031098A3 WO 2011031098 A3 WO2011031098 A3 WO 2011031098A3 KR 2010006191 W KR2010006191 W KR 2010006191W WO 2011031098 A3 WO2011031098 A3 WO 2011031098A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
emitting device
light emitting
semiconductor light
material layer
Prior art date
Application number
PCT/KR2010/006191
Other languages
English (en)
French (fr)
Other versions
WO2011031098A2 (ko
Inventor
남기연
Original Assignee
주식회사 에피밸리
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에피밸리 filed Critical 주식회사 에피밸리
Publication of WO2011031098A2 publication Critical patent/WO2011031098A2/ko
Publication of WO2011031098A3 publication Critical patent/WO2011031098A3/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 개시는 기판; 기판의 상면에 형성되며 전자와 정공의 재결합에 의해 빛을 방출하는 활성층을 포함하는 복수의 반도체층; 기판의 하면에 형성되며 기판을 투과한 빛을 반사시키는 금속층; 기판의 하면과 금속층 사이에 위치되며 SiO2로 형성된 제1 물질층; 제1 물질층과 금속층 사이에 위치되며 TiO2로 형성된 제2 물질층; 및 제2 물질층과 금속층 사이에 위치되며 SiO2로 형성된 제3 물질층;을 포함하며, 제1,2,3 물질층은 기판의 하면에서 하방으로 차례로 적층되고 서로 다른 두께를 갖는 것을 특징으로 하는 반도체 발광소자를 제공한다.
PCT/KR2010/006191 2009-09-10 2010-09-10 반도체 발광소자 WO2011031098A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090085389A KR101100681B1 (ko) 2009-09-10 2009-09-10 반도체 발광소자
KR10-2009-0085389 2009-09-10

Publications (2)

Publication Number Publication Date
WO2011031098A2 WO2011031098A2 (ko) 2011-03-17
WO2011031098A3 true WO2011031098A3 (ko) 2011-06-23

Family

ID=43732973

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/006191 WO2011031098A2 (ko) 2009-09-10 2010-09-10 반도체 발광소자

Country Status (2)

Country Link
KR (1) KR101100681B1 (ko)
WO (1) WO2011031098A2 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915629B2 (en) 2008-12-08 2011-03-29 Cree, Inc. Composite high reflectivity layer
US9461201B2 (en) 2007-11-14 2016-10-04 Cree, Inc. Light emitting diode dielectric mirror
US9362459B2 (en) 2009-09-02 2016-06-07 United States Department Of Energy High reflectivity mirrors and method for making same
US9435493B2 (en) 2009-10-27 2016-09-06 Cree, Inc. Hybrid reflector system for lighting device
US9105824B2 (en) 2010-04-09 2015-08-11 Cree, Inc. High reflective board or substrate for LEDs
US9012938B2 (en) 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
US8764224B2 (en) 2010-08-12 2014-07-01 Cree, Inc. Luminaire with distributed LED sources
US8680556B2 (en) 2011-03-24 2014-03-25 Cree, Inc. Composite high reflectivity layer
US8686429B2 (en) 2011-06-24 2014-04-01 Cree, Inc. LED structure with enhanced mirror reflectivity
US9728676B2 (en) 2011-06-24 2017-08-08 Cree, Inc. High voltage monolithic LED chip
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
US8624482B2 (en) 2011-09-01 2014-01-07 Toshiba Techno Center Inc. Distributed bragg reflector for reflecting light of multiple wavelengths from an LED
CN103972352B (zh) * 2013-01-31 2019-05-31 晶元光电股份有限公司 具有高效能反射结构的发光元件
KR102115564B1 (ko) 2013-09-24 2020-05-27 삼성디스플레이 주식회사 표시기판 및 이를 포함하는 표시패널
US10658546B2 (en) 2015-01-21 2020-05-19 Cree, Inc. High efficiency LEDs and methods of manufacturing
EP3144032A1 (en) * 2015-09-15 2017-03-22 Pixium Vision SA Photosensitive pixel structure with front side coating
CN109166953B (zh) * 2018-07-03 2020-04-10 华灿光电股份有限公司 一种发光二极管芯片及其制作方法
CN111668235B (zh) * 2020-06-08 2023-10-17 Tcl华星光电技术有限公司 显示面板及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060091509A (ko) * 2005-02-15 2006-08-21 삼성전자주식회사 양자점 수직공진형 표면방출 레이저 및 그 제조방법
KR20060134491A (ko) * 2005-06-22 2006-12-28 김성진 질화물 반도체 발광 다이오드 및 그 제조 방법
KR20070013324A (ko) * 2004-05-18 2007-01-30 크리, 인코포레이티드 3족 질화물 소자를 제조하는 방법 및 그 방법을 이용하여제조된 소자
JP2008211164A (ja) * 2007-01-29 2008-09-11 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置及びその製造方法
JP2009016505A (ja) * 2007-07-03 2009-01-22 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体発光素子
KR20090080218A (ko) * 2008-01-21 2009-07-24 엘지이노텍 주식회사 질화물계 발광 소자

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11126925A (ja) 1997-10-21 1999-05-11 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
KR20020081947A (ko) * 2001-04-20 2002-10-30 주식회사 옵토웨이퍼테크 다중반사막을 포함한 발광소자 및 그 제조방법
KR20040081829A (ko) * 2003-03-17 2004-09-23 엘지이노텍 주식회사 발광 다이오드의 반사막 구조
KR20080017180A (ko) * 2006-08-21 2008-02-26 삼성전기주식회사 반도체 발광장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070013324A (ko) * 2004-05-18 2007-01-30 크리, 인코포레이티드 3족 질화물 소자를 제조하는 방법 및 그 방법을 이용하여제조된 소자
KR20060091509A (ko) * 2005-02-15 2006-08-21 삼성전자주식회사 양자점 수직공진형 표면방출 레이저 및 그 제조방법
KR20060134491A (ko) * 2005-06-22 2006-12-28 김성진 질화물 반도체 발광 다이오드 및 그 제조 방법
JP2008211164A (ja) * 2007-01-29 2008-09-11 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置及びその製造方法
JP2009016505A (ja) * 2007-07-03 2009-01-22 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体発光素子
KR20090080218A (ko) * 2008-01-21 2009-07-24 엘지이노텍 주식회사 질화물계 발광 소자

Also Published As

Publication number Publication date
WO2011031098A2 (ko) 2011-03-17
KR101100681B1 (ko) 2012-01-03
KR20110027341A (ko) 2011-03-16

Similar Documents

Publication Publication Date Title
WO2011031098A3 (ko) 반도체 발광소자
WO2011156787A3 (en) Pillar structure for memory device and method
EP2254167A3 (en) Light emitting device and light emitting device package having the same
WO2009142391A3 (ko) 발광소자 패키지 및 그 제조방법
WO2012039932A3 (en) Methods for forming layers on a substrate
EP2581958A3 (en) Organic light emitting diode display and method for manufacturing the same
WO2013027041A3 (en) A semiconductor laser device and a method for manufacturing a semiconductor laser device
WO2009084860A3 (en) Semiconductor light emitting device
TW200638509A (en) Method for fabricating transistor of semiconductor device
EP2378572A3 (en) Electrode configuration for a light emitting device
WO2012108627A3 (en) Light emitting diode having photonic crystal structure and method of fabricating the same
WO2011157385A3 (en) Organic light emitting device
WO2010044561A3 (ko) 3족 질화물 반도체 발광소자
EP2362455A3 (en) Light emitting device, method of manufacturing the same, light emitting device package, and illumination system
WO2012165903A3 (ko) 반도체 발광 소자，그 제조 방법，이를 포함하는 반도체 발광 소자 패키지 및 레이저 가공 장치
WO2011022128A3 (en) High brightness led utilizing a roughened active layer and conformal cladding
EP2605295A3 (en) Ultraviolet light emitting device
WO2008154526A3 (en) Method to make low resistance contact
WO2010044642A3 (en) Semiconductor light emitting device and method for manufacturing the same
TW200744162A (en) Method for fabricating semiconductor device having capacitor
WO2010038976A3 (en) Semiconductor light emitting device and method of manufacturing the same
WO2009002129A3 (en) Semiconductor light emitting device and method of manufacturing the same
WO2010011048A3 (ko) 반도체 발광소자 및 그 제조방법
WO2014017871A3 (ko) 반도체 발광소자
EP2605296A3 (en) Light-emitting device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10815643

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205 DATED 18.05.2012)

122 Ep: pct application non-entry in european phase

Ref document number: 10815643

Country of ref document: EP

Kind code of ref document: A2